WO2022196312A1 - Vacuum drying device and vacuum drying method - Google Patents
Vacuum drying device and vacuum drying method Download PDFInfo
- Publication number
- WO2022196312A1 WO2022196312A1 PCT/JP2022/008123 JP2022008123W WO2022196312A1 WO 2022196312 A1 WO2022196312 A1 WO 2022196312A1 JP 2022008123 W JP2022008123 W JP 2022008123W WO 2022196312 A1 WO2022196312 A1 WO 2022196312A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- coating
- side wall
- vacuum drying
- partition
- Prior art date
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- 238000001291 vacuum drying Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 239000011248 coating agent Substances 0.000 claims abstract description 84
- 238000000576 coating method Methods 0.000 claims abstract description 84
- 238000005192 partition Methods 0.000 claims abstract description 53
- 239000002904 solvent Substances 0.000 claims abstract description 43
- 239000011247 coating layer Substances 0.000 claims abstract description 40
- 239000007789 gas Substances 0.000 claims abstract description 19
- 239000011261 inert gas Substances 0.000 claims abstract description 15
- 238000000638 solvent extraction Methods 0.000 claims abstract description 3
- 238000001035 drying Methods 0.000 claims description 48
- 230000006837 decompression Effects 0.000 claims description 12
- 238000004080 punching Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/12—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by mechanical means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/04—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Definitions
- the present disclosure relates to a vacuum drying apparatus and a vacuum drying method.
- OLEDs Organic Light Emitting Diodes
- organic EL Electrode
- Organic EL displays using organic light-emitting diodes have the advantages of being thin, light, and low power consumption, as well as being excellent in terms of response speed, viewing angle, and contrast ratio.
- QLED Quantum-dot Light Emitting Diode
- a QLED has an anode formed on a substrate, a cathode provided on the opposite side of the substrate from the anode, and an organic layer provided therebetween.
- the organic layer has, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order from the anode side to the cathode side.
- a coating apparatus for an inkjet method is used for forming the hole injection layer, the hole transport layer, the light emitting layer, and the like.
- the coating device forms a coating layer by coating a substrate with a coating liquid containing an organic material and a solvent. By drying and baking the coating layer under reduced pressure, a hole injection layer and the like are formed (see, for example, Patent Document 1).
- the reduced-pressure drying apparatus of Patent Document 2 includes an airflow regulating portion that regulates airflow from the vicinity of the upper surface of the substrate held on the substrate holding stage toward the exhaust port of the processing container.
- the airflow regulating portion includes a cover formed of a side wall portion that blocks the airflow on the side of the substrate and a ceiling portion that blocks the airflow above the substrate, and a partition portion that partitions the inside of the cover above the substrate. In such a configuration, unevenness in the reduced-pressure drying rate is reduced by adjusting the vertical spacing between the substrate and the partition using the spacing adjusting section.
- the display manufacturing method has been developed by the above technologies, but as a technology to further improve the utilization rate of the substrate, a technology called MMG (Multi Models on Glass), which simultaneously produces display panels of different sizes on a single substrate, is known. It is for example, by producing panels of various sizes, such as a combination of two 55-inch panels and three 65-inch panels, or a combination of two 82-inch panels and three 32-inch panels, the substrate utilization rate can be improved. can.
- MMG Multi Models on Glass
- a reduced-pressure drying apparatus includes a chamber for accommodating a substrate having a plurality of coating regions on which a coating layer containing a solvent is formed, a substrate holding stage for holding the substrate inside the chamber, and a side wall portion arranged around the substrate held by the substrate holding stage; a partition arranged inside the side wall portion and partitioning a space above the plurality of coating regions of the substrate for each of the coating regions; A rectifying plate disposed at a position facing the substrate so as to block the space partitioned by the side wall portion and the partition, the rectifying plate having a plurality of through holes formed therein, and an imperfection inside the chamber.
- a gas supply unit for supplying an active gas and a decompression unit for decompressing the inside of the chamber are provided.
- FIG. 1 is a vertical cross-sectional view of a reduced-pressure drying apparatus according to an embodiment of the present disclosure; Cross-sectional view along line AA in FIG. Longitudinal cross-sectional view of a reduced-pressure drying apparatus according to Modification 2 of the present disclosure Longitudinal cross-sectional view of a reduced-pressure drying apparatus according to Modification 3 of the present disclosure Longitudinal cross-sectional view of a reduced-pressure drying apparatus according to Modification 4 of the present disclosure
- the present disclosure is intended to solve the above problems, and suppresses the occurrence of uneven drying in each coating region when drying a substrate having a plurality of coating regions on which a coating layer containing a solvent is formed under reduced pressure. It is an object of the present invention to provide a reduced pressure drying apparatus and a reduced pressure drying method.
- FIG. 1 is a vertical cross-sectional view of a reduced-pressure drying apparatus according to an embodiment.
- 2 is a cross-sectional view taken along line AA of FIG. 1.
- the reduced-pressure drying apparatus 100 shown in FIGS. 1 and 2 accommodates the substrate 10 on which the coating layer containing the solvent is formed in the coating region 11 inside the chamber 110, and applies the coating in a reduced-pressure atmosphere whose pressure is lower than the atmospheric pressure. Evaporate the solvent from the layer.
- the coating layer is composed of a group of liquid droplets arranged without gaps, or a group of liquid droplets arranged two-dimensionally at a predetermined pitch like elements of a display panel.
- the reduced-pressure drying apparatus 100 includes a chamber 110, a substrate holding stage 120, a side wall portion 130, a partition 140, a straightening plate 150, a plurality of suction control portions 160, a gas supply portion 170, a pressure reducing portion 180, a relative and a moving unit 190 .
- the chamber 110 accommodates the substrate 10 .
- a loading/unloading port for the substrate 10 is formed in the side wall of the chamber 110 .
- An opening/closing shutter for opening and closing the loading/unloading port is arranged around the loading/unloading port. The open/close shutter opens the loading/unloading port to allow the substrate 10 to be loaded/unloaded, and the open/close shutter closes the loading/unloading port to allow the pressure inside the chamber 110 to be reduced.
- the substrate holding stage 120 is arranged inside the chamber 110 .
- the substrate holding stage 120 holds the substrate 10 by suction or the like so that the surface on which the coating layer is formed faces upward.
- the side wall part 130 is arranged on the substrate holding stage 120 so as to surround the substrate 10 .
- the side wall portion 130 is arranged such that the lower surface is in close contact with the upper surface of the substrate holding stage 120 and gas does not leak from between the upper surface of the substrate holding stage 120 and the lower surface of the side wall portion 130 when the substrate 10 is dried under reduced pressure.
- the distance from the inner surface of the side wall portion 130 to the outer edge of the substrate 10 is 30 mm or less, and more preferably 5 mm or less.
- the height of the side wall portion 130 is desirably determined by the diameter of a through hole 151 of the rectifying plate 150 and the thickness of the rectifying plate 150 , which will be described later.
- the partition 140 is composed of a plurality of plate-like members having surfaces substantially parallel to the vertical direction.
- the partition 140 is arranged so that the lower surface faces the area other than the coating area 11 on the substrate 10, that is, the area where the coating layer containing the solvent is not formed.
- the partition 140 is arranged so that the portion facing the inner surface of the side wall portion 130 is in close contact with the inner surface of the side wall portion 130 and gas does not leak from between the side wall portion 130 and the inner surface of the partition 140 when the substrate 10 is dried under reduced pressure. It is The height of the partition 140 is such that it does not contact the substrate 10 .
- a drying process in which a plurality of coating regions 11 exist is susceptible to the saturated vapor of the coating regions 11 adjacent to each other. It is desirable to reduce the impact.
- the partition 140 partitions the space above the substrate 10 into each coating region 11 together with the side wall portion 130, and adjusts the airflow in each space.
- the rectifying plate 150 is arranged so as to cover the region surrounded by the side wall portion 130 from above.
- the bottom surface of the rectifying plate 150 is in close contact with the top surfaces of the side wall portion 130 and the partition 140 so that gas does not leak from between the top surfaces of the side wall portion 130 and the partition 140 and the bottom surface of the rectifying plate 150 when the substrate 10 is dried under reduced pressure. are placed.
- a plurality of through holes 151 are formed in the current plate 150 .
- the aperture ratio of the current plate 150 is set to an appropriate value according to the type of solvent of the coating layer applied on the substrate 10, the coating pattern of the coating layer, the pressure profile during drying under reduced pressure, and the like. Specifically, it is possible to set the aperture ratio of the portion of the straightening plate 150 facing each coating region 11 according to the amount of solvent in each coating region 11 before evacuation.
- the opening ratio of the portions facing the coating regions 11 in which the coating layer with the large amount of solvent is formed before evacuation is calculated as follows: It can be set to be larger than the aperture ratio of the portion facing the formed coating region 11 . Further, when the exhaust flow velocity in the central portion of each coating region 11 during decompression exhaust is slower than the exhaust flow velocity in the outer peripheral portion, and the amount of solvent remaining in the central portion increases, each coating region in the rectifying plate 150 The opening ratio of the portion facing the central portion of 11 can be set larger than the opening ratio of the portion facing the outer peripheral portion.
- the rectifying plate 150 is configured by, for example, connecting in the horizontal direction a plurality of punching plates, or a plurality of wire meshes or wire mesh filters capable of controlling the fluid resistance value with a high mesh such as plain weave or twilled weave. You may In addition, when the opening ratio of the rectifying plate 150 differs depending on the amount of solvent in each coating region 11, or when it differs depending on whether or not the portion faces the central portion of the coating region 11, a plurality of punching plates having different opening ratios may be used. Alternatively, one rectifying plate 150 may be configured by horizontally connecting wire meshes or wire mesh filters having different mesh sizes. From the viewpoint of suppressing temperature unevenness in the current plate 150 itself, it is desirable to use a material with high thermal conductivity, such as aluminum, as the material of the current plate 150 .
- the shape of the through hole 151 that defines the aperture ratio of the straightening plate 150 is not particularly limited, but is preferably circular or polygonal. It is preferably shorter than the vertical distance L1 to plate 150 . It is preferable that the aperture ratio of the portions of the rectifying plate 150 facing the coating regions 11 is 0.1% to 63%.
- the same number of suction control units 160 as the application areas 11 are provided.
- the plurality of suction control units 160 may be composed of one member, or may be composed of separate members.
- Each suction control part 160 is formed in a substantially truncated quadrangular pyramid shape in which an upper opening 161 at the upper end is smaller than a lower opening at the lower end.
- the lower opening is an example of a first opening
- the upper opening 161 is an example of a second opening.
- Each suction control unit 160 is arranged so as to substantially block the space above each application region 11 .
- a lower end surface of each suction control portion 160 is in close contact with a portion of the upper surface of the straightening plate 150 that substantially overlaps the side wall portion 130 or the partition 140 in a plan view.
- the size of the upper opening 161 of each suction control unit 160 can be set according to the amount of solvent in each coating region 11 before evacuation. For example, suction control is performed so that the upper opening 161 of the suction control unit 160 facing the coating region 11 formed with a coating layer with a large amount of solvent is formed before evacuation, and the upper opening 161 faces the coating region 11 with a coating layer with a small amount of solvent formed thereon. It can be formed larger than the upper opening 161 of the portion 160 .
- the gas supply unit 170 includes, for example, a gas supply source 171, a mass flow controller 172, and an opening/closing valve 173.
- a gas supply source 171 is connected to the chamber 110 through a pipe having a mass flow controller 172 and an opening/closing valve 173 in the middle, and supplies an inert gas such as nitrogen gas to the interior of the chamber 110 .
- the amount of inert gas supplied can be adjusted by the mass flow controller 172 .
- the pressure reducing unit 180 reduces the pressure inside the chamber 110 to a pressure lower than the atmospheric pressure.
- the decompression unit 180 includes a decompression source 181 and an APC (Adaptive Pressure Control) valve 182 .
- a dry pump, a mechanical booster pump, a turbomolecular pump, or the like is used as the reduced pressure source 181, for example.
- the reduced pressure source 181 is connected to the chamber 110 via a pipe having an APC valve 182 in the middle, and reduces the pressure inside the chamber 110 .
- the pressure inside the chamber 110 is reduced to, for example, 1 Pa or less while being adjusted by the APC valve 182 .
- the pressure reduction profile correlates with the evaporation behavior of the solvent in the coating layer, and is an important control parameter for achieving uniform drying.
- An exhaust port 111 of the chamber 110 is arranged at an isotropic position with respect to the substrate holding stage 120 . For example, it is arranged at a position corresponding to the central portion of the substrate holding stage 120 in plan view.
- the relative movement section 190 raises and lowers the side wall section 130 , the partition 140 , the straightening plate 150 and the suction control section 160 with respect to the substrate holding stage 120 .
- the relative movement section 190 may raise and lower the side wall section 130, the partition 140, the current plate 150, and the suction control section 160 without raising and lowering the substrate holding stage 120, or may move the side wall section 130, the partition 140, the current plate 150, and the suction control section 160 up and down.
- the substrate holding stage 120 may be raised and lowered without raising and lowering the suction control section 160, or the side wall section 130, the partition 140, the rectifying plate 150 and the suction control section 160 may be raised and lowered while moving in the direction opposite to the moving direction thereof.
- the substrate holding stage 120 may be raised and lowered.
- the coating layer of the coating region 11 of the substrate 10 may be used for manufacturing an organic EL light-emitting diode, may be used for manufacturing a quantum dot light-emitting device, or may be used for manufacturing an organic thin-film transistor. It may be one used for manufacturing.
- the relative movement section 190 raises the side wall section 130 , the partition 140 , the current plate 150 and the suction control section 160 with respect to the substrate holding stage 120 at the same time.
- a transfer device (not shown) carries the substrate 10 having a plurality of coating regions 11 formed with a coating layer containing a solvent from the outside of the reduced pressure drying device 100 into the chamber 110, It is placed on the substrate holding stage 120 .
- the relative movement section 190 moves the side wall section 130 , the partition 140 , the straightening plate 150 and the suction control section 160 to the substrate holding stage 120 . and simultaneously lower it to the state shown in FIG.
- the gas supply unit 170 supplies an inert gas to the inside of the chamber 110 to create an inert gas atmosphere inside the chamber 110 .
- the pressure reducing unit 180 reduces the pressure inside the chamber 110 in the inert gas atmosphere.
- the inert gas has a large effect on the evaporation of the solvent present at the edge of the coating area 11 .
- the inert gas and solvent vapor existing near the upper surface of the substrate 10 turn into an air current, pass through the through hole 151 of the current plate 150 and the upper opening 161 of the suction control unit 160, and enter the exhaust port 111 of the chamber 110. be carried.
- the side wall portion 130 , the partition 140 , the straightening plate 150 and the suction control portion 160 regulate the airflow from near the upper surface of the substrate 10 toward the exhaust port 111 of the chamber 110 .
- the solvent vapor is heavier than the inert gas, first, the region surrounded by the side wall portion 130, the partition 140 and the current plate 150 is filled with the solvent vapor below the inert gas. After spreading over the entire surface of each coating region 11, the solvent vapor diffuses upward while being prevented from spreading to other coating regions 11 by the partition 140. Vapor pressure unevenness is reduced.
- the aperture ratio of the portion of current plate 150 facing each coating region 11 and the size and shape of upper opening 161 of each suction control unit 160 are determined by the solvent in each coating region 11 before evacuation. Since the space above each coating region 11 is partitioned by the side wall portion 130 and the partition 140, the decompression rate of the entire chamber 110 is the same, but it differs depending on each coating region 11.
- Vapors generated from each coating area 11 can be evacuated at a high speed. As a result, the same drying process can be used to complete the vacuum drying of the entire coating area 11 at the same time.
- the opening ratio of the portion facing the central portion of each application area 11 is set larger than the opening ratio of the portion facing the outer peripheral portion. Therefore, it is possible to reduce unevenness in drying caused by the drying of the outer peripheral portion of each coating region 11 being fast and the drying of the central portion being slow. As a result, the film thickness of the coating layer formed in each coating region 11 of the substrate 10 can be made uniform within the surface of the substrate 10 .
- the adjustment of the evaporation rate of the solvent is performed by the vertical distance L1 from the substrate 10 to the current plate 150, the distance L2 from the side wall portion 130 to the edge of the coating area 11, and the distance from the partition 140 to the edge of the coating area 11. , the distribution of the through holes 151 of the current plate 150, the area of the upper opening 161 of the suction control unit 160, and the like.
- the distance L1 from the substrate 10 to the rectifying plate 150 should be long enough so that the tendency of the opening pattern of the rectifying plate 150 does not appear in the evaporation distribution of the solvent from the substrate 10.
- the distance L1 is at least twice the diameter of the through hole 151. Keeping distance is preferable.
- the distance L2 from the side wall portion 130 to the edge of the application area 11 and the distance L3 from the partition 140 to the edge of the application area 11 are approximately the same distance, and the shorter the distance, the outer circumference of the application area 11. It is highly effective in suppressing dryness. Further, by adjusting the distribution of the through-holes 151 of the straightening plate 150 and the area of the upper opening 161 of the suction control section 160, the evaporation time of the solvent in each coating region 11 can be adjusted. The above conditions differ depending on the size of the substrate 10, the amount of solvent in the coating layer formed on each coating region 11, the pattern, etc., in completing the vacuum drying of all the coating regions 11 simultaneously by the same drying process. adjusted accordingly.
- the gas supply unit 170 supplies inert gas to the interior of the chamber 110 to return the interior of the chamber 110 to the atmosphere before decompression.
- the relative movement section 190 moves the side wall section 130 , the partition 140 , the straightening plate 150 and the suction control section 160 up and down simultaneously with respect to the substrate holding stage 120 , and the transfer device takes out the substrate 10 from the substrate holding stage 120 .
- the reduced-pressure drying apparatus 100 is surrounded by the side wall portion 130 and the partition 140 arranged so as to partition the space above each coating region 11, and the side wall portion 130. and a rectifying plate 150 that closes the region from above. Therefore, during drying under reduced pressure, the space above each coating region 11 can be filled with vapor of the solvent below the inert gas, and the solvent evaporates from the coating layer formed in each coating region 11. It is possible to suppress the unevenness of the vapor pressure of As a result, it is possible to suppress the occurrence of uneven drying in each coating region 11 .
- the reduced pressure drying according to the present disclosure By using the apparatus 100, the unevenness of the film thickness of the coating layer within the surface of the substrate 10 has been improved to about 80%.
- the application pattern is changed.
- the effect of the reduced-pressure drying apparatus 100 of the present disclosure is remarkably exhibited when forming a changing pattern.
- Modification 1 Differences from the embodiment are that a temperature control section for controlling the temperature of the substrate holding stage 120 and the side wall section 130 is provided, and that the side wall section 130, the partition 140 and the straightening plate 150 are thermally connected.
- a chiller in which cooling water is flowed, a Peltier device, or the like is used as the temperature control unit.
- the saturated vapor pressure of the solvent in the space surrounded by the substrate holding stage 120, the side wall portion 130, and the straightening plate 150 can be lowered before the substrate 10 is placed on the substrate holding stage 120.
- FIG. Therefore, when the substrate 10 is placed on the substrate holding stage 120, the space around the substrate 10 reaches the saturated vapor pressure earlier than at normal temperature, so the evaporation of the solvent in the coating layer can be stopped earlier than at normal temperature. can.
- the absolute amount of the solvent that volatilizes in the space around the substrate can be reduced exponentially compared to the normal temperature. It is possible to suppress unevenness in the drying rate that occurs before decompression than at room temperature.
- Side wall portion 130 and straightening plate 150 adsorb solvent vapor by cooling.
- the solvent can be desorbed from the Further, a configuration that adjusts the temperature of at least one of the substrate holding stage 120, the side wall portion 130, and the partition 140 may be applied as the temperature control portion.
- FIG. 3 shows a longitudinal sectional view of a reduced pressure drying apparatus 100 according to Modification 2.
- a partition 140 is also arranged between the side wall portion 130 and the coating region 11 .
- FIG. 1 it is possible to create a state in which all sides of the coating region 11 in plan view are adjacent to the partitions 140, and it is possible to further improve the film thickness uniformity of the coating layer of the substrate 10.
- FIG. 4 shows a longitudinal sectional view of a reduced-pressure drying apparatus 100 according to Modification 3.
- an elastic body 141 is provided at the lower end of the partition 140 .
- the elastic body 141 deforms when it comes into physical contact with the substrate 10 , so that the partition 140 and the substrate 10 can be sealed without breaking the substrate 10 . Therefore, the steam between the coating regions 11 can be completely shut off, the effect of the steam from the adjacent coating regions 11 on each coating region 11 can be eliminated, and the film thickness uniformity of the coating layer on the substrate 10 can be further improved. becomes possible.
- FIG. 5 shows a longitudinal sectional view of a reduced pressure drying apparatus 100 according to Modification 4.
- an elastic body 131 is provided at the lower end of the side wall portion 130 . Accordingly, by driving the relative movement portion 190 within the deformable range of the elastic body 131, the distance between the current plate 150 and the substrate 10 can be adjusted. Therefore, the distance between the partition 140 and the substrate 10 can be made smaller, and the film thickness uniformity of the coating layer of the substrate 10 can be further improved.
- the aperture ratios of portions of the rectifying plate 150 that face the application regions 11 may be set to the same value.
- the opening ratio of the portion facing each coating region 11 is varied according to the amount of solvent in each coating region 11 before evacuation, and the portion facing the central portion and the portion facing the outer peripheral portion of each coating region 11 may be set to the same value.
- the vacuum drying apparatus 100 does not have to include the suction control section 160.
- the reduced-pressure drying apparatus and reduced-pressure drying method of the present disclosure when a substrate having a plurality of coating regions on which a coating layer containing a solvent is formed is dried under reduced pressure, uneven drying occurs in each coating region. can be suppressed.
- the vacuum drying apparatus and the vacuum drying method of the present disclosure can be suitably applied to the manufacture of a display panel in which the film thickness of the coating layer formed in a plurality of coating regions on the substrate is uniform within the plane.
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Abstract
Description
本開示の実施の形態について説明する。図1は、実施の形態に係る減圧乾燥装置の縦断面図である。図2は、図1のA-A線に沿う横断面図である。 [Embodiment]
An embodiment of the present disclosure will be described. FIG. 1 is a vertical cross-sectional view of a reduced-pressure drying apparatus according to an embodiment. 2 is a cross-sectional view taken along line AA of FIG. 1. FIG.
図1および図2に示す減圧乾燥装置100は、溶剤を含む塗布層が塗布領域11に形成された基板10をチャンバー110の内部に収容し、気圧が大気圧よりも低い減圧雰囲気中で、塗布層から溶剤を蒸発させる。塗布層は、隙間なく配置された液滴群、または、表示パネルの素子のように2次元的に所定のピッチで配置された液滴群で構成されている。減圧乾燥装置100は、チャンバー110と、基板保持ステージ120と、側壁部130と、仕切り140と、整流板150と、複数の吸引制御部160と、ガス供給部170と、減圧部180と、相対移動部190とを有する。 <Structure of Vacuum Drying Apparatus>
The reduced-
次に、上記構成の減圧乾燥装置100を用いた減圧乾燥方法について説明する。なお、基板10の塗布領域11の塗布層は、有機EL発光ダイオードの製造に用いられるものであってもよいし、量子ドット発光デバイスの製造に用いられるものであってもよいし、有機薄膜トランジスタの製造に用いられるものであってもよい。 <Reduced pressure drying method>
Next, a vacuum drying method using the
以上説明したように、本実施の形態によれば、減圧乾燥装置100は、各塗布領域11の上方の空間を区画するように配置された側壁部130および仕切り140と、側壁部130で囲まれた領域を上から塞ぐ整流板150とを備える。このため、減圧乾燥時に、各塗布領域11の上方の空間において、不活性ガスの下方に溶剤の蒸気が充満する状態にすることができ、各塗布領域11に形成された塗布層から蒸発する溶剤の蒸気圧のムラを抑制することができる。その結果、各塗布領域11のそれぞれにおいて乾燥ムラが発生することを抑制できる。 <Effect of Embodiment>
As described above, according to the present embodiment, the reduced-
本開示は、これまでに説明した実施の形態に示されたものに限られないことはいうまでもなく、その趣旨を逸脱しない範囲内で、種々の変形を加えることができる。また、上記実施の形態および以下に示す変形例は、正常に機能する限り、どのように組み合わせても良い。 [Modification]
It goes without saying that the present disclosure is not limited to the embodiments described above, and various modifications can be made without departing from the scope of the present disclosure. Moreover, the above embodiments and modifications shown below may be combined in any way as long as they function normally.
実施の形態と異なる点は、基板保持ステージ120と側壁部130の温度を調整する調温部を設けた点と、側壁部130、仕切り140および整流板150を熱的に接続した点である。調温部としては、冷却水を流したチラーやペルチェ素子などが用いられる。基板保持ステージ120と側壁部130を冷却することで、基板10と、整流板150と、基板保持ステージ120、側壁部130および整流板150で囲まれた空間とを冷却することができる。これにより、基板10を基板保持ステージ120に配置する前から、基板保持ステージ120、側壁部130および整流板150で囲まれた空間の溶剤の飽和蒸気圧を下げることができる。したがって、基板10を基板保持ステージ120に配置した際に、基板10の周囲の空間が常温時よりも早く飽和蒸気圧に達するため、塗布層の溶剤の蒸発を常温時よりも早く停止させることができる。また、基板10の周囲の空間を冷却し、飽和蒸気圧を下げることにより、当該周囲の空間で揮発する溶剤の絶対量を常温時と比べて指数関数的に減らすことができるため、結果として、減圧前に生じる乾燥速度のムラを常温時よりも抑えることができる。なお、側壁部130および整流板150は冷却によって溶剤の蒸気を吸着するが、減圧乾燥の後に、側壁部130を加熱することで、整流板150で捕集した溶剤を再度気化させて整流板150から溶剤を脱離させることができる。また、調温部として、基板保持ステージ120、側壁部130および仕切り140のうち少なくともいずれか1つの温度を調整する構成を適用してもよい。 (Modification 1)
Differences from the embodiment are that a temperature control section for controlling the temperature of the
図3に、変形例2に係る減圧乾燥装置100の縦断面図を示す。実施の形態と異なる点は、側壁部130と塗布領域11の間にも仕切り140を配置した点である。これにより、平面視における塗布領域11の全ての辺が仕切り140に隣接する状態を作ることができ、基板10の塗布層の膜厚均一性をより向上させることが可能となる。 (Modification 2)
FIG. 3 shows a longitudinal sectional view of a reduced
図4に、変形例3に係る減圧乾燥装置100の縦断面図を示す。実施の形態と異なる点は、仕切り140の下端に弾性体141を設けた点である。これにより、弾性体141が基板10に物理的に接触したときに変形するため、基板10を破壊することなく仕切り140と基板10の間を密閉することができる。したがって、各塗布領域11間の蒸気を完全に遮断し、各塗布領域11における隣接する塗布領域11からの蒸気の影響を無くすことができ、基板10の塗布層の膜厚均一性をより向上させることが可能となる。 (Modification 3)
FIG. 4 shows a longitudinal sectional view of a reduced-
図5に、変形例4に係る減圧乾燥装置100の縦断面図を示す。実施の形態と異なる点は、側壁部130の下端に弾性体131を設けた点である。これにより、弾性体131の変形可能範囲内で相対移動部190を駆動させることで、整流板150と基板10の距離を調整することができる。したがって、仕切り140と基板10との間隔も、より小さくすることができ、基板10の塗布層の膜厚均一性をより向上させることが可能となる。 (Modification 4)
FIG. 5 shows a longitudinal sectional view of a reduced
整流板150の各塗布領域11に対向する部位の開口率を同じ値にしてもよい。また、各塗布領域11に対向する部位の開口率を減圧排気前の各塗布領域11の溶剤量に応じて異ならせるとともに、各塗布領域11の中央部に対向する部位と外周部に対向する部位の開口率を同じ値にしてもよい。 (Other modifications)
The aperture ratios of portions of the rectifying
11 塗布領域
100 減圧乾燥装置
110 チャンバー
111 排気口
120 基板保持ステージ
130 側壁部
131 弾性体
140 仕切り
141 弾性体
150 整流板
151 貫通穴
160 吸引制御部
161 上側開口
170 ガス供給部
171 ガス供給源
172 マスフローコントローラ
173 開閉バルブ
180 減圧部
181 減圧発生源
182 APCバルブ
190 相対移動部 REFERENCE SIGNS
Claims (11)
- 溶剤を含む塗布層が形成された複数の塗布領域を有する基板を収容するチャンバーと、
前記チャンバーの内部で、前記基板を保持する基板保持ステージと、
前記基板保持ステージに保持された前記基板の周囲に配置された側壁部と、
前記側壁部の内側に配置され、前記基板の前記複数の塗布領域上の空間を前記塗布領域ごとに仕切る仕切りと、
前記基板に対向する位置において前記側壁部および前記仕切りで仕切られた前記空間を塞ぐように配置された整流板であって、複数の貫通穴が形成された前記整流板と、
前記チャンバーの内部に不活性ガスを供給するガス供給部と、
前記チャンバーの内部を減圧する減圧部と、を備える、
減圧乾燥装置。 a chamber for accommodating a substrate having a plurality of coating regions on which a coating layer containing a solvent is formed;
a substrate holding stage that holds the substrate inside the chamber;
a side wall portion arranged around the substrate held by the substrate holding stage;
a partition disposed inside the side wall portion for partitioning a space above the plurality of coating regions of the substrate for each coating region;
a rectifying plate disposed at a position facing the substrate so as to close the space partitioned by the side wall portion and the partition, the rectifying plate having a plurality of through holes;
a gas supply unit that supplies an inert gas to the interior of the chamber;
a decompression unit that decompresses the inside of the chamber,
Vacuum dryer. - 溶剤量が所定量である前記塗布層が形成された前記塗布領域に対向する部位における前記整流板の開口率は、溶剤量が前記所定量よりも少ない前記塗布層が形成された前記塗布領域に対向する部位における前記整流板の開口率よりも大きい、
請求項1に記載の減圧乾燥装置。 The aperture ratio of the rectifying plate in a portion facing the coating region where the coating layer containing a predetermined amount of solvent is formed is the same as that of the coating region where the coating layer containing a solvent less than the predetermined amount is formed. larger than the opening ratio of the rectifying plate at the facing portion;
The vacuum drying apparatus according to claim 1. - 前記複数の塗布領域のそれぞれの中央部に対向する部位における前記整流板の開口率は、前記複数の塗布領域のそれぞれの外周部に対向する部位における前記整流板の開口率よりも大きい、
請求項1または2に記載の減圧乾燥装置。 The aperture ratio of the rectifying plate at the portion facing the central portion of each of the plurality of coating regions is greater than the aperture ratio of the rectifying plate at the portion facing the outer periphery of each of the plurality of coating regions.
The vacuum drying apparatus according to claim 1 or 2. - 前記側壁部および前記仕切りよりも前記基板保持ステージの反対側における前記複数の塗布領域のそれぞれに対向する位置に配置され、前記減圧部による各塗布領域上の気体の吸引を制御する複数の吸引制御部をさらに備え、
前記複数の吸引制御部は、それぞれ、前記塗布領域に近い側の第1の開口および前記塗布領域から遠い側の第2の開口を有する筒状に形成され、
溶剤量が所定量である前記塗布層が形成された前記塗布領域に対向する前記吸引制御部の前記第2の開口は、溶剤量が前記所定量よりも少ない前記塗布層が形成された前記塗布領域に対向する前記吸引制御部の前記第2の開口よりも大きく形成されている、
請求項1から3のいずれか一項に記載の減圧乾燥装置。 a plurality of suction controls arranged at positions facing the plurality of coating regions on the opposite side of the substrate holding stage from the side wall portion and the partition, and controlling suction of gas from the coating regions by the decompression section; further comprising the
each of the plurality of suction control units is formed in a cylindrical shape having a first opening closer to the application area and a second opening farther from the application area;
The second opening of the suction control unit facing the coating region in which the coating layer having a predetermined amount of solvent is formed is the coating layer having the coating layer having a smaller amount of solvent than the predetermined amount. formed larger than the second opening of the suction control unit facing the region,
The vacuum drying apparatus according to any one of claims 1 to 3. - 前記仕切りは、前記基板の平面視において、前記複数の塗布領域の全周を囲むように配置されている、
請求項1から4のいずれか一項に記載の減圧乾燥装置。 The partition is arranged so as to surround the entire periphery of the plurality of coating regions in a plan view of the substrate.
The vacuum drying apparatus according to any one of claims 1 to 4. - 前記仕切りは、前記基板に接しないように配置されている、
請求項1から5のいずれか一項に記載の減圧乾燥装置。 The partition is arranged so as not to contact the substrate,
The vacuum drying apparatus according to any one of claims 1 to 5. - 前記仕切りにおける前記基板に近い側の端部には、前記基板に接する弾性体が配置されている、
請求項1から5のいずれか一項に記載の減圧乾燥装置。 An elastic body in contact with the substrate is arranged at an end of the partition closer to the substrate,
The vacuum drying apparatus according to any one of claims 1 to 5. - 前記基板保持ステージ、前記側壁部および前記仕切りのうち少なくともいずれか1つの温度を調整する温調部をさらに備える、
請求項1から7のいずれか一項に記載の減圧乾燥装置。 further comprising a temperature control unit that adjusts the temperature of at least one of the substrate holding stage, the side wall portion, and the partition;
The vacuum drying apparatus according to any one of claims 1 to 7. - 前記基板保持ステージと、前記側壁部および前記仕切りを相対的に移動させる相対移動部をさらに備える、
請求項1から8のいずれか一項に記載の減圧乾燥装置。 further comprising a relative movement unit for relatively moving the substrate holding stage and the side wall and the partition;
The vacuum drying apparatus according to any one of claims 1 to 8. - 前記整流板は、複数のパンチングプレート、または、複数の金網により構成されている、
請求項1から9のいずれか一項に記載の減圧乾燥装置。 The straightening plate is composed of a plurality of punching plates or a plurality of wire meshes,
The vacuum drying apparatus according to any one of claims 1 to 9. - 請求項1から請求項10のいずれか一項に記載の減圧乾燥装置を用いた減圧乾燥方法であって、
前記チャンバーの内部において、前記基板保持ステージで前記基板を保持し、
前記基板保持ステージに保持された前記基板の周囲に前記側壁部を配置し、かつ、前記側壁部の内側に仕切りを配置することによって、前記基板の前記複数の塗布領域上の空間を前記塗布領域ごとに仕切るとともに、前記側壁部および前記仕切りで仕切られた前記空間を前記整流板で塞ぎ、
前記ガス供給部で前記チャンバーの内部に不活性ガスを供給し、
前記減圧部で前記チャンバーの内部を減圧することによって、前記基板に形成された前記塗布層を乾燥させる、
減圧乾燥方法。 A vacuum drying method using the vacuum drying apparatus according to any one of claims 1 to 10,
holding the substrate on the substrate holding stage inside the chamber;
By arranging the side wall portion around the substrate held by the substrate holding stage and by arranging a partition inside the side wall portion, the space above the plurality of coating regions of the substrate is defined as the coating region. and closing the space partitioned by the side wall portion and the partition with the current plate,
supplying an inert gas to the interior of the chamber with the gas supply unit;
drying the coating layer formed on the substrate by decompressing the interior of the chamber in the decompression unit;
Vacuum drying method.
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JP2003158061A (en) * | 2001-11-22 | 2003-05-30 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
JP2007090200A (en) * | 2005-09-28 | 2007-04-12 | Seiko Epson Corp | Drying method, drying equipment, and deposition method, method for manufacturing electrooptical apparatus, and electrooptical apparatus, and electronic equipment |
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JP2003158061A (en) * | 2001-11-22 | 2003-05-30 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
JP2007090200A (en) * | 2005-09-28 | 2007-04-12 | Seiko Epson Corp | Drying method, drying equipment, and deposition method, method for manufacturing electrooptical apparatus, and electrooptical apparatus, and electronic equipment |
JP2010054070A (en) * | 2008-08-26 | 2010-03-11 | Sharp Corp | Reduced pressure drying apparatus |
JP2011071013A (en) * | 2009-09-28 | 2011-04-07 | Panasonic Corp | Apparatus and method for manufacturing functional layer of organic el device |
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