TW202209426A - Reduced-pressure drying apparatus and reduced-pressure drying method in which the reduced-pressure drying apparatus comprises a chamber, a substrate holding section, a pressure reducing mechanism, and a diffusion suppressing section - Google Patents

Reduced-pressure drying apparatus and reduced-pressure drying method in which the reduced-pressure drying apparatus comprises a chamber, a substrate holding section, a pressure reducing mechanism, and a diffusion suppressing section Download PDF

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TW202209426A
TW202209426A TW110120454A TW110120454A TW202209426A TW 202209426 A TW202209426 A TW 202209426A TW 110120454 A TW110120454 A TW 110120454A TW 110120454 A TW110120454 A TW 110120454A TW 202209426 A TW202209426 A TW 202209426A
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substrate
coating film
chamber
surrounding wall
drying apparatus
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TW110120454A
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Chinese (zh)
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中谷修平
吉田英博
阿部敬行
室真弘
日向亮二
槇本敦
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日商松下知識產權經營股份有限公司
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Publication of TW202209426A publication Critical patent/TW202209426A/en

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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00Drying solid materials or objects by processes not involving the application of heat
    • F26B5/04Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
    • F26B5/045Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum for drying thin, flat articles in a batch operation, e.g. leather, rugs, gels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0466Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a non-reacting gas
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0486Operating the coating or treatment in a controlled atmosphere
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B25/00Details of general application not covered by group F26B21/00 or F26B23/00
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B25/00Details of general application not covered by group F26B21/00 or F26B23/00
    • F26B25/005Treatment of dryer exhaust gases
    • F26B25/006Separating volatiles, e.g. recovering solvents from dryer exhaust gases
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B25/00Details of general application not covered by group F26B21/00 or F26B23/00
    • F26B25/06Chambers, containers, or receptacles
    • F26B25/14Chambers, containers, receptacles of simple construction
    • F26B25/18Chambers, containers, receptacles of simple construction mainly open, e.g. dish, tray, pan, rack
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B9/00Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards
    • F26B9/06Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers
    • F26B9/066Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers the products to be dried being disposed on one or more containers, which may have at least partly gas-previous walls, e.g. trays or shelves in a stack
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Drying Of Solid Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Coating Apparatus (AREA)
  • Thin Film Transistor (AREA)

Abstract

A reduced-pressure drying apparatus comprises: a chamber; a substrate holding section, which holds a substrate in an interior of the chamber, the substrate being formed with a coating film containing a solvent; a pressure reducing mechanism, which implements pressure reduction in the interior of the chamber; and a diffusion suppressing section, which suppresses diffusion of the solvent evaporating from the coating film. The diffusion suppressing section comprises a flow regulation plate, which is arranged above the substrate held by the substrate holding section and has a dimension in plane-view greater than the substrate. The diffusion suppressing section further comprises a flow regulation plate moving mechanism to allow the flow regulation plate to approach or away from the substrate. The diffusion suppressing section further comprises a flow regulation plate temperature-control mechanism for regulating the temperature of the flow regulation plate. The diffusion suppressing section further comprises a surrounding wall disposed around the substrate held by the substrate holding section.

Description

減壓乾燥裝置及減壓乾燥方法Vacuum drying device and vacuum drying method

本揭示是有關於一種減壓乾燥裝置及減壓乾燥方法。The present disclosure relates to a vacuum drying device and a vacuum drying method.

以往,已知有一種利用了有機EL(Electroluminescence,電致發光)之發光的有機發光二極體(OLED:Organic Light Emitting Diode)。使用了有機發光二極體的有機EL顯示器既輕薄又低功耗,並且具有在反應速率或視角、對比度的方面很優異的優點。因此,近年來正作為次世代的平板顯示器(FPD)而備受矚目。此外,發光層並非使用有機EL材料,而是使用了量子點發光材料的量子點發光元件(QLED:Quantum-dot Light Emitting Diode,量子點發光二極體)也正迅速受到注目。Conventionally, there has been known an organic light emitting diode (OLED: Organic Light Emitting Diode) utilizing the light emission of organic EL (Electroluminescence). An organic EL display using an organic light emitting diode is thin and light, has low power consumption, and has the advantages of being excellent in terms of reaction rate, viewing angle, and contrast ratio. Therefore, in recent years, it is attracting attention as a next-generation flat panel display (FPD). In addition, a quantum dot light-emitting element (QLED: Quantum-dot Light Emitting Diode) using a quantum dot light-emitting material instead of an organic EL material for the light-emitting layer is also rapidly attracting attention.

OLED具有:陽極,形成於基板上;陰極,以陽極為基準而設置於與基板相反之側;及有機層,設置於其等之間。有機層是例如從陽極側朝向陰極側依序具有電洞注入層、電洞傳輸層、發光層、電子傳輸層及電子注入層。在電洞注入層或電洞傳輸層、發光層等的形成方面,可使用噴墨法的塗佈裝置。塗佈裝置是藉由將包含有機材料及溶劑的塗佈液塗佈於基板上而形成塗佈膜。藉由將該塗佈膜進行減壓乾燥、燒製,便會形成電洞注入層等(例如,參照專利文獻1)。 先前技術文獻 專利文獻The OLED has: an anode formed on a substrate; a cathode disposed on the opposite side of the substrate based on the anode; and an organic layer disposed therebetween. The organic layer has, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order from the anode side toward the cathode side. In the formation of the hole injection layer, the hole transport layer, the light emitting layer, and the like, a coating apparatus of an inkjet method can be used. The coating device forms a coating film by coating a coating liquid containing an organic material and a solvent on a substrate. By drying and baking this coating film under reduced pressure, a hole injection layer or the like is formed (for example, refer to Patent Document 1). prior art literature Patent Literature

專利文獻1:日本專利特開2016-77966號公報Patent Document 1: Japanese Patent Laid-Open No. 2016-77966

本揭示之一態樣的減壓乾燥裝置具備:腔室;基板保持部,在前述腔室的內部中保持基板,前述基板形成有包含溶劑的塗佈膜;減壓機構,將前述腔室的內部進行減壓;及擴散抑制部,抑制從前述塗佈膜蒸發的溶劑的擴散。A reduced-pressure drying apparatus according to an aspect of the present disclosure includes: a chamber; a substrate holding unit that holds a substrate on which a coating film containing a solvent is formed in the chamber; The inside is decompressed; and the diffusion suppressing portion suppresses the diffusion of the solvent evaporated from the coating film.

用以實施發明之形態 在如專利文獻1所記載之裝置中,在基板面內恐怕會有塗佈膜的乾燥速度產生不均之慮。乾燥速度一旦有不均,便會在基板面內產生發光層等的膜厚的偏差。膜厚是決定發光特性的重要要素,因此膜厚的偏差會導致發光特性的偏差而成為重大的課題。Form for carrying out the invention In the apparatus described in Patent Document 1, there is a possibility that the drying speed of the coating film may be uneven within the substrate surface. If the drying speed is uneven, the thickness of the light-emitting layer or the like will vary within the substrate surface. Since the film thickness is an important factor determining the light-emitting characteristics, the variation in the film thickness causes the variation in the light-emitting characteristics, which is a serious problem.

本揭示是有鑒於這種問題點而作成者,其目的在於提供一種可以將基板面內的塗佈膜的乾燥速度的不均降低之減壓乾燥裝置及減壓乾燥方法。The present disclosure has been made in view of such a problem, and an object of the present disclosure is to provide a reduced-pressure drying apparatus and a reduced-pressure drying method that can reduce unevenness in the drying rate of a coating film on a substrate surface.

<減壓乾燥裝置及減壓乾燥方法> 圖1是顯示本揭示之實施形態的減壓乾燥裝置之構成的縱剖面圖。圖2是沿圖1之A-A線的橫剖面圖。<Drying device under reduced pressure and drying method under reduced pressure> FIG. 1 is a longitudinal sectional view showing the configuration of a vacuum drying apparatus according to an embodiment of the present disclosure. FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1. FIG.

圖1所示之減壓乾燥裝置100是將形成有包含溶劑的塗佈膜的基板10容置於腔室110的內部,並在氣壓比大氣壓更低的減壓氣體環境中,使溶劑從塗佈膜蒸發。減壓乾燥裝置100具備:腔室110、基板保持部120、減壓機構130、氣體供給機構140、擴散抑制部150。The reduced-pressure drying apparatus 100 shown in FIG. 1 accommodates the substrate 10 on which the coating film containing the solvent is formed inside the chamber 110, and in a reduced-pressure gas environment with a pressure lower than atmospheric pressure, the solvent is removed from the coating film. The cloth film evaporates. The decompression drying apparatus 100 includes a chamber 110 , a substrate holding unit 120 , a decompression mechanism 130 , a gas supply mechanism 140 , and a diffusion suppressing unit 150 .

在腔室110的內部設置有基板保持部120。基板保持部120具備:基板載置台121;及腳部122,從下方支撐基板載置台121。在基板載置台121的載置面123載置有上表面形成了塗佈膜的基板10。在腔室110的側壁部設置有基板10的搬入搬出口112。在搬入搬出口112設置有開關擋門113。如圖1中以二點鏈線所示,藉由開關擋門113將搬入搬出口112開放,而變得可進行基板10的搬入搬出,且如圖1中以實線所示,藉由開關擋門113將搬入搬出口112閉塞,而變得可進行腔室110的內部的減壓。在腔室110之底面部設置有1個排氣口114。排氣口114設置於在平面視角下與基板載置台121上的基板10的中央對應的位置,亦即設置於基板10對腔室110之底面部的正交投影內。腔室110的內部在減壓開始前,就已作成為低氧且低露點的氣體環境,例如氮氣環境。A substrate holding portion 120 is provided inside the chamber 110 . The board|substrate holding part 120 is provided with the board|substrate mounting table 121, and the leg part 122, and supports the board|substrate mounting table 121 from below. The substrate 10 having the coating film formed on the upper surface is mounted on the mounting surface 123 of the substrate mounting table 121 . The loading and unloading port 112 of the substrate 10 is provided in the side wall part of the chamber 110 . An open/close door 113 is provided in the carry-in/out port 112 . As shown by the two-dotted chain line in FIG. 1 , by opening and closing the shutter 113 to open the loading/unloading port 112 , the loading and unloading of the substrate 10 becomes possible, and as shown by the solid line in FIG. The shutter 113 closes the carry-in and carry-out port 112, so that the inside of the chamber 110 can be decompressed. One exhaust port 114 is provided on the bottom surface of the chamber 110 . The exhaust port 114 is disposed at a position corresponding to the center of the substrate 10 on the substrate mounting table 121 in a plan view, that is, in an orthogonal projection of the substrate 10 to the bottom surface of the chamber 110 . The inside of the chamber 110 is already made into a low oxygen and low dew point gas environment, such as nitrogen environment, before the decompression starts.

減壓機構130連接於腔室110的排氣口114,並將腔室110的內部減壓為比大氣壓更低的氣壓。減壓機構130例如具備:減壓產生源131、APC(Adaptive Pressure Control,自適應壓力控制)閥132。作為減壓產生源131,可使用例如乾式泵、機械升壓泵、渦輪分子泵等。減壓產生源131是透過在途中設置有APC閥132的配管來與腔室110連接,並且將腔室110的內部進行減壓。腔室110的內部的氣壓是一邊藉由APC閥132來調節,一邊減壓至例如1Pa以下。減壓曲線與塗佈膜的溶劑的蒸發行為有關,是用以實現均勻乾燥的重要控制參數。The decompression mechanism 130 is connected to the exhaust port 114 of the chamber 110, and decompresses the inside of the chamber 110 to a pressure lower than atmospheric pressure. The decompression mechanism 130 includes, for example, a decompression generating source 131 and an APC (Adaptive Pressure Control) valve 132 . As the reduced pressure generating source 131 , for example, a dry pump, a mechanical booster pump, a turbo molecular pump, or the like can be used. The decompression generating source 131 is connected to the chamber 110 through a pipe provided with an APC valve 132 on the way, and depressurizes the inside of the chamber 110 . The air pressure inside the chamber 110 is reduced to, for example, 1 Pa or less while being adjusted by the APC valve 132 . The decompression curve is related to the evaporation behavior of the solvent of the coating film and is an important control parameter to achieve uniform drying.

為了要讓已藉由減壓機構130減壓的腔室110的內部回到原本的氣體環境,氣體供給機構140會將氮氣等的氣體供給至腔室110的內部。氣體供給機構140例如具備:氣體供給源141、質流控制器142、開關閥143。氣體供給源141是透過在途中設置有質流控制器142或開關閥143的配管來與腔室110連接,並且將氣體供給至腔室110的內部。其供給量可藉由質流控制器142來調節。In order to return the inside of the chamber 110 decompressed by the decompression mechanism 130 to the original gas environment, the gas supply mechanism 140 supplies a gas such as nitrogen gas to the inside of the chamber 110 . The gas supply mechanism 140 includes, for example, a gas supply source 141 , a mass flow controller 142 , and an on-off valve 143 . The gas supply source 141 is connected to the chamber 110 through a pipe provided with a mass flow controller 142 or an on-off valve 143 on the way, and supplies gas to the inside of the chamber 110 . Its supply amount can be adjusted by the mass flow controller 142 .

擴散抑制部150會抑制從基板10的塗佈膜蒸發的溶劑的擴散。擴散抑制部150具備:包圍壁160、包圍壁移動機構170、包圍壁板溫控機構180、整流板190、整流板移動機構200、整流板溫控機構210。The diffusion suppressing portion 150 suppresses the diffusion of the solvent evaporated from the coating film of the substrate 10 . The diffusion suppression unit 150 includes an enclosing wall 160 , an enclosing wall moving mechanism 170 , an enclosing wall plate temperature control mechanism 180 , a rectifier plate 190 , a rectifier plate moving mechanism 200 , and a rectifier plate temperature control mechanism 210 .

包圍壁160是形成為四角筒狀。包圍壁160設置於基板載置台121的載置面123,並配置成包圍基板10。構成包圍壁160的4個平板狀的壁部當中,設置於與搬入搬出口112相向的位置的1個壁部161是構成為可藉由圖2所示之包圍壁移動機構170而升降。如圖1中以二點鏈線所示,藉由包圍壁移動機構170的驅動來使壁部161上升,而變得可進行基板10對基板載置台121的載置及從基板載置台121的取出,且如圖1中以實線所示,藉由壁部161下降且其下端接觸基板載置台121,而變得可抑制已從基板10的塗佈膜蒸發的溶劑朝包圍壁160的外部的洩漏。包圍壁160的內面到基板10的端部的距離宜為30mm以下,且更宜為10mm以下。包圍壁160的高度宜為10mm以上,且更宜為50mm以上。The surrounding wall 160 is formed in a rectangular cylindrical shape. The surrounding wall 160 is provided on the mounting surface 123 of the substrate mounting table 121 and is arranged so as to surround the substrate 10 . Among the four flat wall portions constituting the surrounding wall 160 , one wall portion 161 provided at a position facing the carry-in/outlet 112 is configured to be movable up and down by the surrounding wall moving mechanism 170 shown in FIG. 2 . As shown by the two-dot chain line in FIG. 1 , by driving the surrounding wall moving mechanism 170 to raise the wall portion 161 , it becomes possible to perform the mounting of the substrate 10 on the substrate mounting table 121 and the transfer from the substrate mounting table 121 . taken out, and as shown by the solid line in FIG. 1 , by the wall portion 161 descending and its lower end contacting the substrate stage 121 , it becomes possible to suppress the solvent that has evaporated from the coating film of the substrate 10 toward the outside of the surrounding wall 160 of leakage. The distance from the inner surface of the surrounding wall 160 to the end of the substrate 10 is preferably 30 mm or less, and more preferably 10 mm or less. The height of the surrounding wall 160 is preferably 10 mm or more, and more preferably 50 mm or more.

包圍壁溫控機構180是調整包圍壁160的溫度。作為包圍壁溫控機構180,可使用例如有冷卻水流動的冷卻器或帕耳帖元件、加熱器等。藉由將配置成包圍基板10的包圍壁160的溫度進行調整,而變得可將來自形成於基板10上的塗佈膜的溶劑的乾燥速度進行控制。The surrounding wall temperature control mechanism 180 adjusts the temperature of the surrounding wall 160 . As the surrounding wall temperature control mechanism 180, for example, a cooler in which cooling water flows, a Peltier element, a heater, or the like can be used. By adjusting the temperature of the surrounding wall 160 arranged to surround the substrate 10 , it becomes possible to control the drying rate of the solvent from the coating film formed on the substrate 10 .

整流板190是形成為長方形板狀。整流板190是在基板載置台121的上方,且配置在包圍壁160所包圍的區域的內側。整流板190之與基板10相向的面是位於比包圍壁160的上端更下方。如圖2所示,整流板190之與基板10相向的面的大小形成得比基板10更大。整流板190是配置成在平面視角下覆蓋基板10的整面。整流板190是藉由設置於腔室110的上表面部之整流板移動機構200,而如圖1中以實線及二點鏈線所示,設置成可對基板10接近遠離。The straightening plate 190 is formed in a rectangular plate shape. The rectifying plate 190 is arranged above the substrate mounting table 121 and inside the region surrounded by the surrounding wall 160 . The surface of the rectifying plate 190 facing the substrate 10 is located below the upper end of the surrounding wall 160 . As shown in FIG. 2 , the size of the surface of the rectifying plate 190 facing the substrate 10 is formed to be larger than that of the substrate 10 . The rectifying plate 190 is arranged to cover the entire surface of the substrate 10 in a plan view. The rectifier plate 190 is provided by the rectifier plate moving mechanism 200 provided on the upper surface of the chamber 110, and as shown by the solid line and the two-dot chain line in FIG.

整流板溫控機構210是調整整流板190的溫度。藉由整流板溫控機構210,可以改變整流板190的表面的溫度。作為整流板溫控機構210,可使用例如有冷卻水流動的冷卻器或帕耳帖元件等。藉由將整流板190冷卻,可以促進形成於基板10上的塗佈膜的溶劑的蒸發。溶劑從塗佈膜蒸發,當塗佈膜的上方到達飽和蒸氣壓時,蒸發便會停止。但是,若整流板190被冷卻而使溫度變低,已蒸發的溶劑的蒸氣就會在整流板190的表面液化。由於蒸氣壓會相應於蒸氣液化的分量而降低,因此變得不易到達飽和蒸氣壓,從而可進行溶劑的乾燥。The rectifier plate temperature control mechanism 210 adjusts the temperature of the rectifier plate 190 . The temperature of the surface of the rectifier plate 190 can be changed by the rectifier plate temperature control mechanism 210 . As the rectifier plate temperature control mechanism 210 , for example, a cooler, a Peltier element, or the like in which cooling water flows can be used. Evaporation of the solvent of the coating film formed on the substrate 10 can be accelerated by cooling the rectifying plate 190 . The solvent evaporates from the coating film and stops when the saturated vapor pressure is reached above the coating film. However, when the baffle plate 190 is cooled and the temperature is lowered, the vapor of the evaporated solvent will liquefy on the surface of the baffle plate 190 . Since the vapor pressure decreases according to the amount of vapor liquefaction, it becomes difficult to reach the saturated vapor pressure, and drying of the solvent can be performed.

然而,減壓乾燥裝置100是將藉由塗佈裝置形成於基板10上的塗佈膜進行減壓乾燥,使塗佈膜所含的溶劑蒸發。減壓乾燥裝置100是一邊適當調整減壓的速度,一邊將腔室110內進行減壓。溶劑的蒸氣會成為氣流,並從基板10的上表面附近被運到腔室110的排氣口114。氣流越容易移動的場所,乾燥就越容易進行。具體而言,基板10的端部的蒸氣容易擴散,使得乾燥速度變快。However, the vacuum drying apparatus 100 dries the coating film formed on the substrate 10 by the coating apparatus under reduced pressure to evaporate the solvent contained in the coating film. The reduced-pressure drying apparatus 100 depressurizes the inside of the chamber 110 while appropriately adjusting the decompression speed. The vapor of the solvent becomes a gas stream and is carried from the vicinity of the upper surface of the substrate 10 to the exhaust port 114 of the chamber 110 . The easier it is to move the air, the easier it is to dry. Specifically, the vapor at the end of the substrate 10 is easily diffused, so that the drying speed is increased.

於是,為了將塗佈膜的乾燥不均降低,在減壓乾燥裝置100設置有包含包圍壁160與整流板190的擴散抑制部150。藉由存在擴散抑制部150,已從塗佈膜蒸發的溶劑蒸氣會被困在包圍壁160與整流板190所包圍的區域,而可以將基板10面內的乾燥速度的差異縮小。藉此,可以使來自形成於基板10的塗佈膜的溶劑的蒸發在基板10面內均勻化。Then, in order to reduce the drying unevenness of the coating film, the decompression drying apparatus 100 is provided with the diffusion suppressing part 150 including the surrounding wall 160 and the rectifying plate 190 . By the presence of the diffusion suppressing portion 150 , the solvent vapor evaporated from the coating film is trapped in the area surrounded by the surrounding wall 160 and the rectifying plate 190 , thereby reducing the difference in drying speed within the surface of the substrate 10 . Thereby, evaporation of the solvent from the coating film formed on the substrate 10 can be made uniform within the surface of the substrate 10 .

在此,蒸發速度的調整是藉由側面視角下的整流板190的下表面到基板10的上表面之垂直方向的距離L1、平面視角下的整流板190的外緣到基板10的外緣的距離L2、平面視角下的包圍壁160的內面到基板10的外緣的距離L3、整流板190的溫度等的調整來進行。由於上述條件會因基板10的大小、形成於基板10的塗佈膜的溶劑量等而改變,因此要適當調整。例如,距離L1是藉由整流板移動機構200的驅動來調整。因應需要來縮短距離L1,藉此便可在基板10的上方的區域中,輕易地到達從基板10乾燥的溶劑的飽和蒸氣壓,而可輕易地使乾燥速度在基板10面內呈均勻。Here, the evaporation speed is adjusted by the vertical distance L1 from the lower surface of the rectifying plate 190 to the upper surface of the substrate 10 in a side view, and the outer edge of the rectifying plate 190 to the outer edge of the substrate 10 in a plan view. The distance L2, the distance L3 from the inner surface of the surrounding wall 160 to the outer edge of the substrate 10 in a plan view, the temperature of the rectifying plate 190, and the like are adjusted. Since the above-mentioned conditions vary depending on the size of the substrate 10 , the solvent amount of the coating film formed on the substrate 10 , and the like, they should be adjusted appropriately. For example, the distance L1 is adjusted by driving the rectifier plate moving mechanism 200 . The distance L1 can be shortened as necessary, so that the saturated vapor pressure of the solvent dried from the substrate 10 can be easily reached in the region above the substrate 10 , and the drying speed can be easily made uniform within the surface of the substrate 10 .

另外,整流板190也可以具有作為吸附溶劑的蒸氣的吸附板之功能。在此情況下,可使整流板溫控機構210具有提高溫度的功能,亦可將提高整流板190的溫度的構成與整流板溫控機構210分開設置。吸附板是使溶劑的蒸氣例如液化來加以收集。由整流板溫控機構210來降低整流板190的溫度,已從基板10蒸發的溶劑就會液化。又,在減壓乾燥之後將整流板190加熱,由整流板190收集的溶劑就會再度氣化而從整流板脫離。In addition, the rectifying plate 190 may function as an adsorption plate for adsorbing the vapor of the solvent. In this case, the rectifier plate temperature control mechanism 210 can have the function of increasing the temperature, and the structure for increasing the temperature of the rectifier plate 190 can also be provided separately from the rectifier plate temperature control mechanism 210 . The adsorption plate is to collect the vapor of the solvent, for example by liquefaction. When the temperature of the rectifier plate 190 is lowered by the rectifier plate temperature control mechanism 210, the solvent evaporated from the substrate 10 is liquefied. Moreover, by heating the rectifier plate 190 after drying under reduced pressure, the solvent collected by the rectifier plate 190 is re-vaporized and separated from the rectifier plate.

<減壓乾燥方法> 接著,針對使用了上述構成的減壓乾燥裝置100的減壓乾燥方法進行說明。圖3是將腔室內進行減壓時的減壓曲線之一例的說明圖。另外,作為乾燥對象的塗佈膜,可例示用於製造有機EL發光二極體、量子點發光元件、有機薄膜電晶體的塗佈膜,但不限於其等。<Decompression drying method> Next, a vacuum drying method using the vacuum drying apparatus 100 having the above-described configuration will be described. FIG. 3 is an explanatory diagram of an example of a decompression curve when decompressing the chamber. In addition, as a coating film to be dried, a coating film for producing an organic EL light-emitting diode, a quantum dot light-emitting element, and an organic thin-film transistor can be exemplified, but is not limited thereto.

首先,如圖1中以二點鏈線所示,減壓乾燥裝置100使開關擋門113及壁部161上升後,未圖示的搬送機構或作業人員將基板10從減壓乾燥裝置100的外部搬入至腔室110的內部,並載置於基板載置台121上。接著,如圖1中以實線所示,使開關擋門113及壁部161下降,將腔室110內作成為密閉空間後,減壓機構130會將腔室110的內部進行減壓。在減壓氣體環境中,溶劑從塗佈膜蒸發而使塗佈膜乾燥。溶劑的蒸氣會成為氣流,並從基板10的上表面附近被運到腔室110的排氣口114。此時,整流板190與包圍壁160會限制從基板10的上表面附近朝向腔室110的排氣口114的氣流。藉由此氣流的限制,成為在整流板190與包圍壁160所包圍的區域中充滿溶劑的蒸氣的狀態。藉此,可以將基板10面內的乾燥速度的不均降低。First, as shown by the two-dotted chain line in FIG. 1 , after the vacuum drying apparatus 100 lifts the shutter 113 and the wall portion 161 , a transport mechanism or an operator (not shown) removes the substrate 10 from the vacuum drying apparatus 100 . The outside is carried into the chamber 110 and placed on the substrate stage 121 . Next, as shown by the solid line in FIG. 1 , the shutter 113 and the wall 161 are lowered to make the inside of the chamber 110 a closed space, and the decompression mechanism 130 decompresses the inside of the chamber 110 . In a reduced-pressure gas atmosphere, the solvent evaporates from the coating film to dry the coating film. The vapor of the solvent becomes a gas stream and is carried from the vicinity of the upper surface of the substrate 10 to the exhaust port 114 of the chamber 110 . At this time, the rectifying plate 190 and the surrounding wall 160 restrict the airflow from the vicinity of the upper surface of the substrate 10 toward the exhaust port 114 of the chamber 110 . Due to the restriction of the air flow, the region surrounded by the rectifying plate 190 and the surrounding wall 160 is filled with the vapor of the solvent. Thereby, the unevenness of the drying rate in the surface of the substrate 10 can be reduced.

在此,腔室110內的減壓是根據圖3所示之減壓曲線來進行。減壓曲線具有:壓力維持區間(a),將腔室110內的壓力保持恆定;慢速排氣區間(b),以低排氣速度將腔室110內進行減壓;及急速排氣區間(c),以高排氣速度將腔室110內進行減壓。Here, the decompression in the chamber 110 is performed according to the decompression curve shown in FIG. 3 . The decompression curve has: a pressure maintenance section (a), which keeps the pressure in the chamber 110 constant; a slow exhaust section (b), which decompresses the chamber 110 at a low exhaust speed; and a rapid exhaust section (c), the inside of the chamber 110 is depressurized at a high exhaust velocity.

首先,在壓力維持區間(a)中,藉由將腔室110內的壓力保持恆定達預定時間,來使溶劑的蒸氣充滿於基板10上。接著,在慢速排氣區間(b)中,一邊幾乎維持溶劑的蒸氣的充滿狀態,一邊進行溶劑的蒸發。最後,藉由在急速排氣區間(c)中進行減壓,來使溶劑的蒸發完成。另外,較佳的是在到達飽和蒸氣壓為止,進行慢速排氣(進行慢速排氣區間(b)的處理),且到達飽和蒸氣壓後,進行急速排氣(進行急速排氣區間(c)的處理)。又,排氣速度不受限於如上述之3種模式,可多於亦可少於3種模式。First, in the pressure maintaining section (a), the substrate 10 is filled with the vapor of the solvent by maintaining the pressure in the chamber 110 constant for a predetermined time. Next, in the slow exhaust section (b), the evaporation of the solvent is performed while substantially maintaining the full state of the solvent vapor. Finally, the evaporation of the solvent is completed by reducing the pressure in the rapid exhaust section (c). In addition, it is preferable to carry out slow exhausting (processing in the slow exhausting section (b)) until the saturation vapor pressure is reached, and then performing rapid exhausting after reaching the saturated vapour pressure (performing the rapid exhausting section ( c) treatment). In addition, the exhaust speed is not limited to the above-mentioned three modes, and may be more or less than three modes.

減壓乾燥結束後,氣體供給機構140將氣體供給至腔室110的內部,讓腔室110的內部回到原本的氣體環境。之後,如圖1中以二點鏈線所示,減壓乾燥裝置100使開關擋門113及壁部161上升後,未圖示的搬送機構或作業人員將基板載置台121的基板10從腔室110取出。並且,如圖1中以實線所示,減壓乾燥裝置100使開關擋門113及壁部161下降。After the drying under reduced pressure is completed, the gas supply mechanism 140 supplies gas to the inside of the chamber 110 to return the inside of the chamber 110 to the original gas environment. After that, as shown by the two-dot chain line in FIG. 1 , after the decompression drying apparatus 100 lifts the shutter 113 and the wall 161 , a transfer mechanism or an operator (not shown) removes the substrate 10 on the substrate stage 121 from the cavity. Chamber 110 is removed. Then, as shown by the solid line in FIG. 1 , the reduced-pressure drying apparatus 100 lowers the opening and closing shutter 113 and the wall portion 161 .

<實施形態的作用效果> 根據本揭示之減壓乾燥裝置及減壓乾燥方法,可以將基板面內的塗佈膜的減壓乾燥速度的不均降低。例如,如以上所說明,根據本實施形態,減壓乾燥裝置100具備有擴散抑制部150,前述擴散抑制部150包含:包圍壁160,包圍基板載置台121上的基板10;及整流板190,配置在基板10的上方。因此,可以將從形成於基板10上的塗佈膜蒸發的溶劑的蒸氣囤積在包圍壁160與整流板190所包圍的區域,而讓基板10上的區域成為飽和蒸氣壓,藉此便可以使以往乾燥速度變快之場所的乾燥延遲。藉此,可以將基板10面內的塗佈膜的乾燥速度的不均降低。其結果,可以在基板10上形成膜厚均勻性較高的塗佈膜。<The effect of the embodiment> According to the reduced-pressure drying apparatus and the reduced-pressure drying method of the present disclosure, the variation in the reduced-pressure drying rate of the coating film in the substrate surface can be reduced. For example, as described above, according to the present embodiment, the reduced-pressure drying apparatus 100 includes the diffusion suppressing unit 150 including the surrounding wall 160, which surrounds the substrate 10 on the substrate mounting table 121, and the rectifying plate 190, It is arranged above the substrate 10 . Therefore, the vapor of the solvent evaporated from the coating film formed on the substrate 10 can be accumulated in the area surrounded by the surrounding wall 160 and the rectifying plate 190, and the area on the substrate 10 can be saturated with vapor pressure. Drying delay in places where drying speed has been faster in the past. Thereby, the variation in the drying rate of the coating film in the surface of the substrate 10 can be reduced. As a result, a coating film with high uniformity of film thickness can be formed on the substrate 10 .

<實施例> 接著,針對本揭示之實施例進行說明。<Example> Next, the embodiments of the present disclosure will be described.

(實施例1) 圖4A是顯示實施例1之減壓乾燥裝置100A之構成的縱剖面圖。圖4B是沿圖4A之A-A線的橫剖面圖。圖4C是沿圖4A之B-B線的橫剖面圖。圖5A是實施例1及比較例1中的塗佈膜的測定部分的說明圖。圖5B是顯示實施例1中的乾燥後之塗佈膜的膜厚曲線的圖。(Example 1) FIG. 4A is a longitudinal cross-sectional view showing the configuration of a vacuum drying apparatus 100A of Example 1. FIG. Fig. 4B is a cross-sectional view taken along line A-A of Fig. 4A. Fig. 4C is a cross-sectional view taken along line B-B of Fig. 4A. 5A is an explanatory diagram of a measurement portion of the coating film in Example 1 and Comparative Example 1. FIG. 5B is a graph showing the film thickness curve of the coating film after drying in Example 1. FIG.

如圖4A~圖4C所示,實施例1之減壓乾燥裝置100A除了將4個排氣口114分別配置在與基板載置台121的四個角落對應的位置,亦即配置在平面視角下從基板載置台121上的基板10的中央起算的距離相等的位置,且將APC閥132配置在各排氣口114以外,具有與上述實施形態之減壓乾燥裝置100同樣的構成。As shown in FIGS. 4A to 4C , the vacuum drying apparatus 100A of the first embodiment has four exhaust ports 114 arranged at positions corresponding to the four corners of the substrate mounting table 121 , that is, arranged in a plane view from The substrate mounting table 121 has the same configuration as that of the vacuum drying apparatus 100 of the above-described embodiment, except that the APC valve 132 is arranged at the same distance from the center of the substrate 10 and the APC valve 132 is arranged outside each exhaust port 114 .

作為基板10,準備了200mm×200mm的玻璃基板。以噴墨法將環己苯的溶劑塗佈於該基板10而形成了塗佈膜。對於這種基板10,採用了在平面視角下為250mm×250mm的整流板190。藉由使用這種整流板190,作成為在平面視角下整流板190的外緣位於比基板10的外緣更往外側25mm的狀態,亦即L2成為25mm的狀態。又,將側面視角下的整流板190的下表面到基板10的上表面之垂直方向的距離L1設為5mm。將平面視角下的包圍壁160的內面到基板10的外緣的距離L3設為5mm,並將包圍壁160的高度設為50mm。在此狀態下將腔室110內進行減壓來使塗佈膜中的溶劑蒸發,並測定了已乾燥的塗佈膜中的圖5A之對角線EE'部分的膜厚。將塗佈膜的測定結果顯示於圖5B。另外,E為基板10的中心,E'為基板10的角之一。As the substrate 10, a glass substrate of 200 mm×200 mm was prepared. The solvent of cyclohexylbenzene was apply|coated to this board|substrate 10 by the inkjet method, and the coating film was formed. For such a substrate 10, a rectifying plate 190 having a size of 250 mm×250 mm in a plan view was used. By using such a rectifying plate 190, the outer edge of the rectifying plate 190 is located 25 mm outside the outer edge of the substrate 10 in a plan view, that is, a state where L2 is 25 mm. In addition, the distance L1 in the vertical direction from the lower surface of the rectification plate 190 to the upper surface of the substrate 10 in the side view is set to 5 mm. The distance L3 from the inner surface of the surrounding wall 160 to the outer edge of the substrate 10 in a plan view was set to 5 mm, and the height of the surrounding wall 160 was set to 50 mm. In this state, the inside of the chamber 110 was reduced in pressure to evaporate the solvent in the coating film, and the film thickness of the dried coating film at the diagonal line EE' in FIG. 5A was measured. The measurement results of the coating film are shown in FIG. 5B . In addition, E is the center of the substrate 10 , and E′ is one of the corners of the substrate 10 .

如圖5B所示,在形成於基板10上的塗佈膜之中,四個角的乾燥速度變得最快,使得乾燥不均變得顯著,因此測定了基板10上的對角線EE'部分的膜厚曲線。可知在從基板10的中央部起算0.11m的範圍內可確認膜厚均勻的部分,而且對角線EE'的部分當中79%的區域的塗佈膜是平坦的。As shown in FIG. 5B , among the coating films formed on the substrate 10 , the drying speed of the four corners became the fastest, and the drying unevenness became remarkable. Therefore, the diagonal line EE′ on the substrate 10 was measured. Part of the film thickness curve. It was found that a portion with a uniform film thickness was confirmed within a range of 0.11 m from the center of the substrate 10 , and that the coating film was flat in 79% of the area of the diagonal EE′.

(比較例1) 圖6A是顯示比較例1之減壓乾燥裝置之構成的縱剖面圖。圖6B是顯示比較例1中的乾燥後之塗佈膜的膜厚曲線的圖。(Comparative Example 1) 6A is a longitudinal cross-sectional view showing the configuration of a vacuum drying apparatus of Comparative Example 1. FIG. 6B is a graph showing the film thickness curve of the coating film after drying in Comparative Example 1. FIG.

如圖6A所示,比較例1之減壓乾燥裝置100B除了未配置有包圍壁以外,具有與實施例1之減壓乾燥裝置100A同樣的構成。在與實施例1相同的基板10形成了與實施例1相同構成的塗佈膜。使此基板10的塗佈膜在與實施例1相同條件下乾燥,並測定了圖5A所示之對角線EE'部分的膜厚。將塗佈膜的測定結果顯示於圖6B。As shown in FIG. 6A , the reduced-pressure drying apparatus 100B of Comparative Example 1 has the same configuration as that of the reduced-pressure drying apparatus 100A of Example 1, except that the surrounding wall is not arranged. On the same substrate 10 as in Example 1, a coating film having the same configuration as in Example 1 was formed. The coating film of this substrate 10 was dried under the same conditions as in Example 1, and the film thickness of the diagonal line EE' shown in FIG. 5A was measured. The measurement results of the coating film are shown in FIG. 6B .

如圖6B所示,可知在從基板10的中央部起算0.095m的範圍內可確認膜厚均勻的部分,而且對角線EE'的部分當中68%的區域的塗佈膜是平坦的。As shown in FIG. 6B , a portion with a uniform film thickness was confirmed within a range of 0.095 m from the center of the substrate 10 , and the coating film was flat in 68% of the area of the diagonal EE′ portion.

(總結) 可知相較於以比較例1之減壓乾燥裝置100B來乾燥的塗佈膜,以實施例1之減壓乾燥裝置100A來乾燥的塗佈膜的膜厚均勻性較高,而且在實施例1之減壓乾燥裝置100A中容易得到膜厚均勻性較高的塗佈膜。(Summarize) It can be seen that the film thickness uniformity of the coating film dried by the vacuum drying device 100A of Example 1 is higher than that of the coating film dried by the vacuum drying device 100B of Comparative Example 1, and in Example 1 In the vacuum drying apparatus 100A, it is easy to obtain a coating film with high uniformity of film thickness.

<變形例> 本揭示理所當然不受限於到目前為止所說明過的實施形態所示之內容,可以在不脫離其主旨之範圍內施加各種變形。<Variation> It goes without saying that the present disclosure is not limited to the contents shown in the embodiments described so far, and various modifications can be added without departing from the gist of the present disclosure.

(變形例1) 圖7是顯示變形例1之減壓乾燥裝置之構成的橫剖面圖。如圖7所示,變形例1之減壓乾燥裝置100C除了整流板190C的形狀以外,具有與實施例1之減壓乾燥裝置100A同樣的構成。變形例1之整流板190C具備:四角形的基部191C,平面視角下的形狀與整流板190相同;及L字形的突出部192C,從基部191C的四角形的各角落部朝外側突出。基板10的四個角有乾燥速度最快且膜厚均勻性降低的傾向,但藉由使用這種構成的整流板190C,便可更加抑制從基板10的四個角中的塗佈膜蒸發的溶劑的擴散,而變得可更加提升膜厚均勻性。另外,突出部192C亦可在平面視角下並非L字型,亦可為例如大致圓弧狀。(Variation 1) 7 is a cross-sectional view showing the configuration of a vacuum drying apparatus according to Modification 1. FIG. As shown in FIG. 7, the reduced-pressure drying apparatus 100C of the modification 1 has the same structure as the reduced-pressure drying apparatus 100A of Example 1 except the shape of 190C of rectification|straightening plates. The rectifier plate 190C of Modification 1 includes a quadrangular base portion 191C having the same shape as the rectifier plate 190 in a plan view, and an L-shaped protrusion 192C protruding outward from each corner portion of the quadrangle of the base portion 191C. The four corners of the substrate 10 tend to have the fastest drying rate and lower film thickness uniformity. However, by using the straightening plate 190C having such a configuration, the evaporation of the coating film from the four corners of the substrate 10 can be further suppressed. The diffusion of the solvent can further improve the uniformity of the film thickness. In addition, the protruding portion 192C may not be L-shaped in a plan view, and may be, for example, a substantially circular arc shape.

(變形例2) 圖8是顯示變形例2之減壓乾燥裝置之構成的縱剖面圖。如圖8所示,變形例2之減壓乾燥裝置100D除了整流板190D的形狀以外,具有與實施例1之減壓乾燥裝置100A同樣的構成。在變形例2之整流板190D的下表面191D設置有在平面視角下凹陷成四角形(正方形)的整流板凹部192D。在平面視角下,整流板凹部192D的中心與基板10的中心重疊。亦即,整流板190D是形成為基板10的中央部到整流板190D的距離L4比基板10的外緣部到整流板190D的距離L5更長,藉由使用這種構成的整流板190D,基板10的端部會很快到達飽和蒸氣壓。到達飽和蒸氣壓後,溶劑的蒸發便不會繼續進行下去。未設置有整流板凹部192D的情況下,恐怕會有基板10的端部的乾燥速度變得比中央部更慢之慮,但藉由設置整流板凹部192D,可以延遲基板10的端部的乾燥速度。其結果,可以使基板10面內的乾燥速度均勻化,而變得可提升塗佈膜的膜厚均勻性。(Variation 2) 8 is a longitudinal cross-sectional view showing the configuration of a vacuum drying apparatus according to Modification 2. FIG. As shown in FIG. 8, the reduced-pressure drying apparatus 100D of Modification 2 has the same configuration as that of the reduced-pressure drying apparatus 100A of Example 1 except for the shape of the rectifying plate 190D. The lower surface 191D of the rectification plate 190D of Modification 2 is provided with the rectification plate concave portion 192D which is recessed into a quadrangle (square) in a plan view. The center of the rectifier plate recess 192D overlaps the center of the substrate 10 in a plan view. That is, the straightening plate 190D is formed such that the distance L4 from the center of the substrate 10 to the straightening plate 190D is longer than the distance L5 from the outer edge of the substrate 10 to the straightening plate 190D. By using the straightening plate 190D having such a configuration, the substrate The end of 10 will quickly reach the saturated vapor pressure. After reaching the saturated vapor pressure, the evaporation of the solvent does not continue. In the case where the concave portion 192D is not provided, the drying speed of the end portion of the substrate 10 may be slower than that of the central portion. However, by providing the concave portion 192D, the drying of the end portion of the substrate 10 can be delayed. speed. As a result, the drying rate in the surface of the substrate 10 can be made uniform, and the uniformity of the film thickness of the coating film can be improved.

(變形例3) 圖9是顯示變形例3之減壓乾燥裝置之構成的縱剖面圖。如圖9所示,變形例3之減壓乾燥裝置100E除了基板載置台121E的形狀以外,具有與實施例1之減壓乾燥裝置100A同樣的構成。在變形例3之基板載置台121E的載置面123E設置有保持凹部124E,前述保持凹部124E是形成為與基板10的厚度幾乎相同的深度,且在內部配置基板10。亦即,配置在保持凹部124E內的基板10的表面與載置面123E成為齊平。形成於基板10的塗佈膜的溶劑的比重大多比1更大,已蒸發的溶劑會蓄積於下側。在此,當基板10配置在未設置有保持凹部124E的載置面上時,會在基板10與載置面123E之間產生落差。當存在這種落差時,已蒸發的溶劑會移動至比基板10的表面更下方,導致乾燥速度變快。另一方面,若將基板10配置在保持凹部124E內,消除基板10的周圍的落差,就變得不會發生上述的現象,因此可以抑制基板10外周部的乾燥速度的上升。其結果,可以使基板10面內的乾燥速度均勻化,而變得可提升塗佈膜的膜厚均勻性。(Variation 3) 9 is a longitudinal cross-sectional view showing the configuration of a vacuum drying apparatus according to Modification 3. FIG. As shown in FIG. 9, the reduced-pressure drying apparatus 100E of the modification 3 has the same structure as the reduced-pressure drying apparatus 100A of Example 1 except the shape of the board|substrate mounting table 121E. The mounting surface 123E of the substrate mounting table 121E according to Modification 3 is provided with a holding recess 124E formed to have almost the same depth as the thickness of the substrate 10 and arranging the substrate 10 inside. That is, the surface of the board|substrate 10 arrange|positioned in the holding recessed part 124E becomes flush with the mounting surface 123E. The specific gravity of the solvent of the coating film formed on the substrate 10 is often larger than 1, and the evaporated solvent is accumulated on the lower side. Here, when the board|substrate 10 is arrange|positioned on the mounting surface in which the holding|maintenance recessed part 124E is not provided, the drop will generate|occur|produce between the board|substrate 10 and the mounting surface 123E. When there is such a drop, the evaporated solvent will move below the surface of the substrate 10, resulting in a faster drying rate. On the other hand, if the substrate 10 is disposed in the holding recess 124E and the drop around the substrate 10 is eliminated, the above-mentioned phenomenon does not occur, so that the drying speed of the outer peripheral portion of the substrate 10 can be suppressed from increasing. As a result, the drying rate in the surface of the substrate 10 can be made uniform, and the uniformity of the film thickness of the coating film can be improved.

(變形例4) 圖10A是顯示變形例4之減壓乾燥裝置之構成的縱剖面圖。圖10B是沿圖10A之C-C線的橫剖面圖。如圖10A及圖10B所示,變形例4之減壓乾燥裝置100F除了在基板載置台121上設置有框部125F以外,具有與實施例1之減壓乾燥裝置100A同樣的構成。框部125F是形成為與基板10的厚度幾乎相同的厚度的框狀。在框部125F的內部配置基板10。配置在框部125F內的基板10的表面與框部125F成為齊平。藉由設置框部125F所帶來的作用效果和變形例3相同,將基板10配置在框部125F內,消除基板10的周圍的落差,藉此便可以抑制已蒸發的溶劑擴散到比基板10的表面更下方,因此可以抑制基板10外周部的乾燥速度的上升。其結果,可以使基板10面內的乾燥速度均勻化,而變得可提升塗佈膜的膜厚均勻性。(Variation 4) 10A is a longitudinal cross-sectional view showing the configuration of a vacuum drying apparatus according to Modification 4. FIG. Fig. 10B is a cross-sectional view taken along line C-C of Fig. 10A. As shown in FIGS. 10A and 10B , the reduced-pressure drying apparatus 100F of Modification 4 has the same configuration as that of the reduced-pressure drying apparatus 100A of Embodiment 1, except that the substrate mounting table 121 is provided with a frame portion 125F. The frame portion 125F is formed in a frame shape having substantially the same thickness as the thickness of the substrate 10 . The board|substrate 10 is arrange|positioned inside the frame part 125F. The surface of the board|substrate 10 arrange|positioned in the frame part 125F becomes flush with the frame part 125F. The effect of providing the frame portion 125F is the same as that of Modification 3. By arranging the substrate 10 in the frame portion 125F, the drop around the substrate 10 can be eliminated, thereby preventing the evaporated solvent from diffusing into the substrate 10 . Since the surface of the substrate 10 is further down, the increase in the drying rate of the outer peripheral portion of the substrate 10 can be suppressed. As a result, the drying rate in the surface of the substrate 10 can be made uniform, and the uniformity of the film thickness of the coating film can be improved.

(其他變形例) 包圍壁移動機構170的配置位置不受限於圖2所示之位置。又,亦可設置像是使構成包圍壁160的4個壁部全部升降的包圍壁移動機構。亦可作成為設置一種以設置於壁部161的上端部、側端部或下端部的旋動軸為中心來使壁部161旋動的包圍壁移動機構,藉此而可進行基板10對腔室110的進出。雖然是由包圍壁160與整流板190來構成擴散抑制部150,但亦可採用包圍壁160與整流板190一體化的形狀的擴散抑制部,在此情況下,較佳的是在擴散抑制部設置貫通孔。亦可作成為不包含包圍壁160,僅由整流板190來構成擴散抑制部150的構成。(Other modifications) The arrangement position of the surrounding wall moving mechanism 170 is not limited to the position shown in FIG. 2 . Moreover, you may provide the surrounding wall moving mechanism which raises and lowers all the four wall parts which comprise the surrounding wall 160, for example. It is also possible to provide a surrounding wall moving mechanism that rotates the wall portion 161 with a rotation axis provided at the upper end, side end portion or lower end portion of the wall portion 161 as the center. Access to chamber 110. Although the diffusion suppressing portion 150 is constituted by the surrounding wall 160 and the rectifying plate 190, a diffusion suppressing portion having a shape in which the surrounding wall 160 and the rectifying plate 190 are integrated may also be used. In this case, the diffusion suppressing portion is preferably Provide through holes. The surrounding wall 160 may not be included, and the diffusion suppressing portion 150 may be constituted only by the rectifying plate 190 .

產業上之可利用性 本揭示之減壓乾燥裝置及減壓乾燥方法可以適合利用在製造一種形成於基板上的塗佈膜的膜厚在面內呈均勻的顯示面板。industrial availability The reduced-pressure drying apparatus and the reduced-pressure drying method of the present disclosure can be suitably used in the manufacture of a display panel in which the film thickness of the coating film formed on the substrate is uniform in the plane.

10:基板 100,100A,100B,100C,100D,100E,100F:減壓乾燥裝置 110:腔室 112:搬入搬出口 113:開關擋門 114:排氣口 120,120E:基板保持部 121,121E:基板載置台 122:腳部 123,123E:載置面 124E:保持凹部 125F:框部 130:減壓機構 131:減壓產生源 132:APC閥 140:氣體供給機構 141:氣體供給源 142:質流控制器 143:開關閥 150:擴散抑制部 160:包圍壁 161:壁部 170:包圍壁移動機構 180:包圍壁溫控機構 190,190C,190D:整流板 191C:基部 191D:下表面 192C:突出部 192D:整流板凹部 200:整流板移動機構 210:整流板溫控機構 A-A,B-B,C-C:線 E:中心 E':角 EE':對角線 L1,L2,L3,L4,L5:距離10: Substrate 100, 100A, 100B, 100C, 100D, 100E, 100F: Decompression drying device 110: Chamber 112: Move in and move out 113: switch door 114: exhaust port 120, 120E: Substrate holding part 121, 121E: Substrate mounting table 122: Feet 123, 123E: Mounting surface 124E: Hold Recess 125F: Frame part 130: Decompression mechanism 131: Decompression generation source 132: APC valve 140: Gas supply mechanism 141: Gas supply source 142: Mass Flow Controller 143: On-off valve 150: Diffusion Suppression Section 160: Surrounding Wall 161: Wall 170: Surrounding wall moving mechanism 180: Surrounding wall temperature control mechanism 190, 190C, 190D: Rectifier plate 191C: Base 191D: Lower Surface 192C: Protrusions 192D: Rectifier plate recess 200: Rectifier plate moving mechanism 210: Rectifier plate temperature control mechanism A-A, B-B, C-C: line E: Center E': angle EE': Diagonal L1,L2,L3,L4,L5: Distance

圖1是顯示本揭示之實施形態的減壓乾燥裝置之構成的縱剖面圖。 圖2是沿圖1之A-A線的橫剖面圖。 圖3是將本揭示之實施形態的腔室內進行減壓時的減壓曲線(profile)之一例的說明圖。 圖4A是顯示本揭示之實施例的實施例1之減壓乾燥裝置之構成的縱剖面圖。 圖4B是沿圖4A之A-A線的橫剖面圖。 圖4C是沿圖4A之B-B線的橫剖面圖。 圖5A是本揭示之實施例的實施例1及比較例1中的塗佈膜的測定部分的說明圖。 圖5B是顯示本揭示之實施例的實施例1中的乾燥後之塗佈膜的膜厚曲線的圖。 圖6A是顯示本揭示之實施例的比較例1之減壓乾燥裝置之構成的縱剖面圖。 圖6B是顯示本揭示之實施例的比較例1中的乾燥後之塗佈膜的膜厚曲線的圖。 圖7是顯示本揭示之變形例1之減壓乾燥裝置之構成的橫剖面圖。 圖8是顯示本揭示之變形例2之減壓乾燥裝置之構成的縱剖面圖。 圖9是顯示本揭示之變形例3之減壓乾燥裝置之構成的縱剖面圖。 圖10A是顯示本揭示之變形例4之減壓乾燥裝置之構成的縱剖面圖。 圖10B是沿圖10A之C-C線的橫剖面圖。FIG. 1 is a longitudinal sectional view showing the configuration of a vacuum drying apparatus according to an embodiment of the present disclosure. FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1. FIG. 3 is an explanatory diagram of an example of a decompression profile when decompressing the chamber according to the embodiment of the present disclosure. 4A is a longitudinal cross-sectional view showing the structure of the vacuum drying apparatus of Example 1 of the embodiment of the present disclosure. Fig. 4B is a cross-sectional view taken along line A-A of Fig. 4A. Fig. 4C is a cross-sectional view taken along line B-B of Fig. 4A. 5A is an explanatory diagram of a measurement portion of a coating film in Example 1 and Comparative Example 1 of an example of the present disclosure. 5B is a graph showing the film thickness curve of the coating film after drying in Example 1 of the embodiments of the present disclosure. 6A is a longitudinal cross-sectional view showing the configuration of a vacuum drying apparatus in Comparative Example 1 of the embodiments of the present disclosure. 6B is a graph showing the film thickness curve of the coating film after drying in Comparative Example 1 of the embodiments of the present disclosure. 7 is a cross-sectional view showing the configuration of a vacuum drying apparatus according to Modification 1 of the present disclosure. 8 is a longitudinal cross-sectional view showing the configuration of a vacuum drying apparatus according to Modification 2 of the present disclosure. 9 is a longitudinal cross-sectional view showing the configuration of a vacuum drying apparatus according to Modification 3 of the present disclosure. 10A is a longitudinal cross-sectional view showing the configuration of a vacuum drying apparatus according to Modification 4 of the present disclosure. Fig. 10B is a cross-sectional view taken along line C-C of Fig. 10A.

10:基板 10: Substrate

100:減壓乾燥裝置 100: Decompression drying device

110:腔室 110: Chamber

112:搬入搬出口 112: Move in and move out

113:開關擋門 113: switch door

114:排氣口 114: exhaust port

120:基板保持部 120: Substrate holding part

121:基板載置台 121: Substrate mounting table

122:腳部 122: Feet

123:載置面 123: Mounting surface

130:減壓機構 130: Decompression mechanism

131:減壓產生源 131: Decompression generation source

132:APC閥 132: APC valve

140:氣體供給機構 140: Gas supply mechanism

141:氣體供給源 141: Gas supply source

142:質流控制器 142: Mass Flow Controller

143:開關閥 143: On-off valve

150:擴散抑制部 150: Diffusion Suppression Section

160:包圍壁 160: Surrounding Wall

161:壁部 161: Wall

180:包圍壁溫控機構 180: Surrounding wall temperature control mechanism

190:整流板 190: Rectifier plate

200:整流板移動機構 200: Rectifier plate moving mechanism

210:整流板溫控機構 210: Rectifier plate temperature control mechanism

A-A:線 A-A: Line

L1:距離 L1: Distance

Claims (19)

一種減壓乾燥裝置,具備: 腔室; 基板保持部,在前述腔室的內部中保持基板,前述基板形成有包含溶劑的塗佈膜; 減壓機構,將前述腔室的內部進行減壓;及 擴散抑制部,抑制從前述塗佈膜蒸發的溶劑的擴散。A vacuum drying device, comprising: Chamber; a substrate holding part for holding a substrate in the interior of the chamber, the substrate having a coating film containing a solvent formed thereon; a decompression mechanism for decompressing the interior of the chamber; and The diffusion suppressing portion suppresses the diffusion of the solvent evaporated from the coating film. 如請求項1之減壓乾燥裝置,其中前述擴散抑制部具備: 整流板,配置在前述基板保持部所保持的前述基板的上方,且平面視角下的大小形成得比前述基板更大。The vacuum drying device according to claim 1, wherein the diffusion suppressing part is provided with: The rectifying plate is arranged above the substrate held by the substrate holding portion, and is formed to have a larger size in a plan view than the substrate. 如請求項2之減壓乾燥裝置,其中前述擴散抑制部更具備: 整流板移動機構,使前述整流板對前述基板接近遠離。The vacuum drying device according to claim 2, wherein the diffusion suppressing part further comprises: The rectifier plate moving mechanism moves the rectifier plate closer to and away from the substrate. 如請求項2或3之減壓乾燥裝置,其中前述擴散抑制部更具備: 整流板溫控機構,調整前述整流板的溫度。The vacuum drying device according to claim 2 or 3, wherein the diffusion suppressing part further comprises: The rectifier plate temperature control mechanism adjusts the temperature of the aforesaid rectifier plate. 如請求項2至4中任一項之減壓乾燥裝置,其中前述整流板是形成為前述基板的中央部到前述整流板的距離比前述基板的外緣部到前述整流板的距離更長。The vacuum drying apparatus according to any one of claims 2 to 4, wherein the straightening plate is formed such that the distance from the center portion of the substrate to the straightening plate is longer than the distance from the outer edge portion of the substrate to the straightening plate. 如請求項2至5中任一項之減壓乾燥裝置,其中前述基板是形成為矩形板狀, 前述整流板具備: 基部,平面視角下的形狀為矩形;及 突出部,從前述基部的前述矩形的各角部朝外側突出。The vacuum drying apparatus according to any one of claims 2 to 5, wherein the substrate is formed in a rectangular plate shape, The aforementioned rectifier plate has: the base, which is rectangular in shape when viewed in plan; and The protruding portion protrudes outward from each corner portion of the aforementioned rectangle of the aforementioned base portion. 如請求項2至6中任一項之減壓乾燥裝置,其中前述擴散抑制部更具備: 包圍壁,配置在前述基板保持部所保持的前述基板的周圍。The vacuum drying device according to any one of claims 2 to 6, wherein the aforementioned diffusion suppressing part further comprises: The surrounding wall is arranged around the substrate held by the substrate holding portion. 如請求項7之減壓乾燥裝置,其中前述包圍壁配置在比前述整流板更外側, 在前述腔室設置有用於使前述基板在水平方向上進出的搬入搬出口, 前述擴散抑制部更具備: 包圍壁移動機構,使前述包圍壁中的至少與前述搬入搬出口相向的部分升降。The decompression drying device according to claim 7, wherein the surrounding wall is disposed outside the rectifying plate, The chamber is provided with a loading and unloading port for carrying the substrate in and out in the horizontal direction, The aforementioned diffusion suppressing part further includes: The surrounding wall moving mechanism lifts and lowers at least a portion of the surrounding wall facing the carrying-in/out port. 如請求項7或8之減壓乾燥裝置,其中前述擴散抑制部更具備: 包圍壁溫控機構,調整前述包圍壁的溫度。The vacuum drying device according to claim 7 or 8, wherein the diffusion suppressing part further comprises: The temperature control mechanism of the surrounding wall adjusts the temperature of the surrounding wall. 如請求項7至9中任一項之減壓乾燥裝置,其中前述基板保持部具有: 載置面,可載置前述基板並且設置有前述包圍壁, 前述包圍壁的從前述載置面起算的高度為10mm以上, 前述包圍壁的內面到前述基板的外緣的距離為10mm以下。The vacuum drying device according to any one of claims 7 to 9, wherein the aforementioned substrate holding portion has: a mounting surface capable of mounting the substrate and provided with the surrounding wall, The height of the surrounding wall from the mounting surface is 10 mm or more, The distance from the inner surface of the surrounding wall to the outer edge of the substrate is 10 mm or less. 如請求項1至10中任一項之減壓乾燥裝置,其在前述腔室設置有連接前述減壓機構的排氣口, 前述排氣口是在比前述基板保持部所保持的前述基板更下方,設置於平面視角下的前述基板的正交投影內。The decompression drying device according to any one of claims 1 to 10, wherein the chamber is provided with an exhaust port connected to the decompression mechanism, The said exhaust port is provided in the orthogonal projection of the said board|substrate in a planar view below the said board|substrate hold|maintained by the said board|substrate holding|maintenance part. 如請求項11之減壓乾燥裝置,其在前述腔室設置有1個前述排氣口, 前述1個排氣口設置於在平面視角下與前述基板的中央對應的位置。The decompression drying device according to claim 11, wherein one of the aforementioned exhaust ports is provided in the aforementioned chamber, The one exhaust port is provided at a position corresponding to the center of the substrate in a plan view. 如請求項1至10中任一項之減壓乾燥裝置,其中前述基板是形成為矩形板狀, 在前述腔室設置有連接前述減壓機構的4個排氣口, 前述4個排氣口是在比前述基板保持部所保持的前述基板更下方,設置於在平面視角下從前述基板的中央起算的距離相等的位置。The vacuum drying device according to any one of claims 1 to 10, wherein the substrate is formed in a rectangular plate shape, The aforementioned chamber is provided with four exhaust ports connected to the aforementioned decompression mechanism, The four exhaust ports are provided below the substrate held by the substrate holding portion, and are provided at equal distances from the center of the substrate in a plan view. 如請求項1至13中任一項之減壓乾燥裝置,其在前述基板保持部設置有保持凹部,前述保持凹部是形成為與前述基板的厚度相同的深度,且在內部配置前述基板。The reduced-pressure drying apparatus according to any one of claims 1 to 13, wherein the substrate holding portion is provided with a holding concave portion, the holding concave portion is formed to the same depth as the thickness of the substrate, and the substrate is disposed inside. 如請求項1至13中任一項之減壓乾燥裝置,其在前述基板保持部設置有框部,前述框部是形成為與前述基板的厚度相同的厚度的框狀,且在內部配置前述基板。The reduced-pressure drying apparatus according to any one of claims 1 to 13, wherein the substrate holding portion is provided with a frame portion, the frame portion is formed in a frame shape having the same thickness as the substrate, and the frame portion is disposed inside. substrate. 一種減壓乾燥方法,使用如請求項1至15中任一項之減壓乾燥裝置,使形成於前述基板的塗佈膜乾燥。A method of drying under reduced pressure for drying a coating film formed on the aforementioned substrate by using the drying apparatus under reduced pressure according to any one of claims 1 to 15. 如請求項16之減壓乾燥方法,其中前述塗佈膜是用於製造有機EL發光二極體的塗佈膜。The method of drying under reduced pressure according to claim 16, wherein the coating film is a coating film for producing an organic EL light-emitting diode. 如請求項16之減壓乾燥方法,其中前述塗佈膜是用於製造量子點發光元件的塗佈膜。The method of drying under reduced pressure according to claim 16, wherein the coating film is a coating film for manufacturing a quantum dot light-emitting element. 如請求項16之減壓乾燥方法,其中前述塗佈膜是用於製造有機薄膜電晶體的塗佈膜。The method of drying under reduced pressure according to claim 16, wherein the coating film is a coating film for manufacturing an organic thin film transistor.
TW110120454A 2020-08-26 2021-06-04 Reduced-pressure drying apparatus and reduced-pressure drying method in which the reduced-pressure drying apparatus comprises a chamber, a substrate holding section, a pressure reducing mechanism, and a diffusion suppressing section TW202209426A (en)

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