KR20230156036A - Reduced pressure drying device and reduced pressure drying method - Google Patents

Abstract

A reduced pressure drying apparatus includes a chamber for accommodating a substrate having a plurality of application areas on which an application layer containing a solvent is formed, a substrate holding stage for holding the substrate inside the chamber, and the substrate held on the substrate holding stage. a side wall portion disposed around the side wall portion, a partition disposed inside the side wall portion to divide the space on the plurality of application regions of the substrate for each application region, and the side wall portion and the partition at a position opposite to the substrate. It is arranged to block the space divided by a rectifying plate having a plurality of through holes, a gas supply part that supplies an inert gas to the inside of the chamber, and a decompression part that depressurizes the inside of the chamber.

Description

Reduced pressure drying device and reduced pressure drying method

This disclosure relates to a reduced pressure drying apparatus and a reduced pressure drying method.

Conventionally, an organic light emitting diode (OLED: Organic Light Emitting Diode), which is a light emitting diode using organic EL (Electroluminescence) light emission, is known. Organic EL displays using organic light-emitting diodes have the advantage of being thin, lightweight, low power consumption, and excellent in terms of response speed, viewing angle, and contrast ratio.

In addition, interest in quantum dot light emitting diodes (QLED: Quantum-dot Light Emitting Diodes) that use quantum dot light emitting materials instead of organic EL materials in the light emitting layer is also rapidly increasing. QLED has an anode formed on a substrate, a cathode installed on the opposite side of the substrate based on the anode, and an organic layer formed between them. The organic layer has a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order, for example, from the anode side to the cathode side. An inkjet coating device is used to form the hole injection layer, hole transport layer, light emitting layer, etc. The coating device forms an application layer by applying a coating liquid containing an organic material and a solvent onto the substrate. By drying and baking the application layer under reduced pressure, a hole injection layer and the like are formed (for example, see Patent Document 1).

When forming an application layer using a coating device such as that described in Patent Document 1, there is variation in the reduced pressure drying speed of the coating layer within the surface of the substrate, so by pursuing a uniform reduced pressure drying process, the variation in reduced pressure drying speed is prevented. Measures have been taken to reduce and improve the utilization rate of the substrate (for example, see Patent Document 2). The reduced-pressure drying apparatus of Patent Document 2 includes an airflow regulating portion that regulates the airflow toward the exhaust port of the processing container from the vicinity of the upper surface of the substrate held on the substrate holding stage. The air flow regulating section includes a cover formed of a side wall portion that blocks the air flow from the side of the substrate and a ceiling portion that blocks the air flow from above the substrate, and a partition portion that divides the interior of the cover above the substrate. In this configuration, the unevenness of the reduced pressure drying speed was reduced by adjusting the vertical distance between the substrate and the partition using the gap adjustment unit.

This is a display manufacturing method that has been developed through the above technologies. As a technology to further improve the utilization rate of the substrate, a technology called MMG (Multi Models on Glass), which simultaneously produces display panels of different sizes using one substrate, is known. As an example, the utilization rate of the substrate can be improved by producing panels of various sizes, such as a combination of two 55-inch panels and three 65-inch panels, or a combination of two 82-inch panels and three 32-inch panels.

Japanese Patent No. 6338507 Publication Japanese Patent No. 6804250 Publication

A reduced-pressure drying apparatus of one aspect of the present disclosure includes a chamber for accommodating a substrate having a plurality of application areas on which an application layer containing a solvent is formed, a substrate holding stage for holding the substrate inside the chamber, and the substrate a side wall portion disposed around the substrate held on a holding stage, a partition disposed inside the side wall portion and dividing the space on the plurality of application regions of the substrate for each of the application regions, and at a position opposite to the substrate. A baffle plate arranged to block the space divided by the side wall and the partition, the baffle plate having a plurality of through holes, a gas supply portion for supplying an inert gas to the inside of the chamber, and the inside of the chamber. It is provided with a pressure reducing unit that reduces the pressure.

1 is a longitudinal cross-sectional view of a reduced pressure drying device according to an embodiment of the present disclosure.
Figure 2 is a cross-sectional view taken along line A-A in Figure 1
Figure 3 is a longitudinal cross-sectional view of a reduced pressure drying device according to Modification 2 of the present disclosure.
Figure 4 is a longitudinal cross-sectional view of a reduced pressure drying device according to Modification 3 of the present disclosure.
Figure 5 is a longitudinal cross-sectional view of a reduced pressure drying device according to Modification 4 of the present disclosure.

In MMG technology, there are the following problems during reduced pressure drying. When drying a substrate under reduced pressure, which has a plurality of application areas on which an application layer composed of a group of droplets arranged without gaps, or an application layer composed of a group of droplets arranged two-dimensionally at a predetermined pitch, such as elements of a display panel, is formed, 1 Among the sides dividing two application areas, the drying speed is different for the side adjacent to the other application area and the side not adjacent to the other application area depending on the presence or absence of the influence of the vapor pressure of the adjacent application area. Therefore, there is a problem that drying unevenness occurs within each application area.

The present disclosure is to solve the above problems, and when drying a substrate having a plurality of application areas on which an application layer containing a solvent is formed under reduced pressure, drying under reduced pressure can suppress the occurrence of drying unevenness in each application area. The purpose is to provide a device and a reduced pressure drying method.

［Form of implementation］

Embodiments of the present disclosure will be described. 1 is a vertical cross-sectional view of a reduced pressure drying apparatus according to an embodiment. FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1.

＜Configuration of reduced pressure drying device＞

The reduced-pressure drying apparatus 100 shown in FIGS. 1 and 2 accommodates a substrate 10 on which an application layer containing a solvent is formed in the application area 11 in the interior of a chamber 110, and performs a reduced-pressure drying process in which the atmospheric pressure is lower than atmospheric pressure. In the atmosphere, the solvent is evaporated from the application layer. The application layer is composed of a group of droplets arranged without gaps, or a group of droplets arranged two-dimensionally at a predetermined pitch, like elements of a display panel. The reduced pressure drying apparatus 100 includes a chamber 110, a substrate holding stage 120, a side wall 130, a partition 140, a baffle plate 150, and a plurality of suction control units 160. , it has a gas supply unit 170, a pressure reducing unit 180, and a relative moving unit 190.

The chamber 110 accommodates the substrate 10. Although not shown, an entry/exit port for the substrate 10 is formed on the side wall of the chamber 110. Around the loading/unloading exit, an opening/closing shutter is arranged to open/close the loading/closing exit. When the opening/closing shutter opens the loading/unloading/exiting port, loading/unloading of the substrate 10 becomes possible, and when the opening/closing shutter blocks the loading/unloading/exiting, the pressure inside the chamber 110 becomes possible.

The substrate holding stage 120 is disposed inside the chamber 110 . The substrate holding stage 120 holds the substrate 10 by suction or the like so that the side on which the application layer is formed faces upward.

The side wall portion 130 is arranged to surround the substrate 10 on the substrate holding stage 120 . The lower surface of the side wall portion 130 is in close contact with the upper surface of the substrate holding stage 120, and the substrate 10 is dried under reduced pressure from between the upper surface of the substrate holding stage 120 and the lower surface of the side wall portion 130. It is arranged so that gas does not leak. The distance from the inner surface of the side wall portion 130 to the outer edge of the substrate 10 is 30 mm or less, and is more preferably 5 mm or less. The height of the side wall portion 130 is preferably determined by the diameter of the through hole 151 of the flow plate 150, which will be described later, or the thickness of the flow plate 150.

The partition 140 is comprised of a plurality of plate-shaped members having surfaces substantially parallel to the vertical direction. The partition 140 is arranged so that its lower surface faces an area other than the application area 11 on the substrate 10, that is, an area in which an application layer containing a solvent is not formed. The portion of the partition 140 that faces the inner surface of the side wall 130 is in close contact with the inner surface of the side wall 130, and the portion of the partition 140 is in close contact with the inner surface of the side wall 130 and the inner surface of the partition 140. It is arranged so that gas does not leak during reduced pressure drying. The height of the partition 140 is a height that does not contact the substrate 10. In the drying process in which a plurality of application areas 11 exist, they are easily influenced by saturated vapor in adjacent application areas 11, so the gap between the partition 140 and the substrate 10 is made as small as possible so that they are adjacent to each other. It is desirable to reduce the influence of saturated steam on the application area 11. The partition 140, together with the side wall portion 130, divides the space on the substrate 10 into each application area 11 and adjusts the airflow in each space.

The baffle plate 150 is arranged to block the area surrounded by the side wall portion 130 from above. The lower surface of the baffle plate 150 is in close contact with the upper surface of the side wall portion 130 and the partition 140, and a substrate is formed between the upper surface of the side wall portion 130 and the partition 140 and the lower surface of the baffle plate 150. It is arranged so that gas does not leak during reduced pressure drying in (10).

A plurality of through holes 151 are formed in the baffle plate 150. By adjusting the hole diameter, number, and distribution of the through holes 151, the opening ratio of the baffle plate 150 can be arbitrarily set. The opening ratio of the baffle plate 150 is set to an appropriate value depending on the type of solvent for the coating layer applied on the substrate 10, the application pattern of the coating layer, the pressure profile during reduced pressure drying, etc. Specifically, the opening ratio of the portion of the baffle plate 150 facing each application area 11 can be set according to the amount of solvent in each application area 11 before depressurization. For example, among the areas facing each application area 11 in the baffle plate 150, the opening ratio of the area facing the application area 11 where the application layer with a large amount of solvent before depressurizing is formed is set to a area with a small amount of solvent. It can be set to be larger than the opening ratio of the area opposite to the application area 11 where the application layer is formed. In addition, when the exhaust flow rate in the central part of each application area 11 during reduced pressure exhaust is slow compared to the exhaust flow rate in the outer peripheral part, and the amount of solvent remaining in the central part increases, each application area in the baffle plate 150 The aperture ratio of the portion facing the central portion of (11) can be set to be larger than the aperture ratio of the portion facing the outer periphery.

In addition, the straightening plate 150 is, for example, a plurality of punching plates, or a plurality of wire meshes that can control the fluid resistance value by high mesh such as plain weave or twill weave. It may be configured by connecting wire mesh filters in the horizontal direction. In addition, when the opening ratio of the baffle plate 150 is different depending on the amount of solvent in each application area 11 or is different depending on whether the area is opposite to the central part of the application area 11, a plurality of punching plates with different opening ratios are used. Alternatively, one rectifying plate 150 may be formed by connecting wire mesh or wire mesh filters of different mesh sizes in the horizontal direction. As a material for the baffle plate 150, it is desirable to use a material with high thermal conductivity, such as aluminum, from the viewpoint of suppressing temperature unevenness of the baffle plate 150 itself.

In addition, the shape of the through hole 151 that defines the opening ratio of the baffle plate 150 is not particularly limited, but is preferably circular or polygonal, and the circular diameter or polygonal diagonal length is determined from the substrate 10. It is preferable that it is shorter than the vertical distance L1 to the buffet plate 150. In addition, it is preferable that the opening ratio of the portion of the baffle plate 150 facing each application area 11 is 0.1% to 63%.

The suction control units 160 are installed in the same number as the application areas 11. The plurality of suction control units 160 may be composed of one member or may be composed of different members. Each suction control unit 160 is formed in a substantially square pyramid shape with the upper opening 161 at the upper end being smaller than the lower opening at the lower end. The lower opening is an example of the first opening, and the upper opening 161 is an example of the second opening. Each suction control unit 160 is arranged so as to substantially block the space above each application area 11. The lower end of each suction control unit 160 is in close contact with a portion of the upper surface of the flow plate 150 that substantially overlaps the side wall 130 or partition 140 when viewed from the top. Due to this configuration, when drying the substrate 10 under reduced pressure, gas does not leak from between the lower end of each suction control unit 160 and the baffle plate 150, and the upper opening of each suction control unit 160 ( Gas can only be released from 161). Additionally, the size of the upper opening 161 of each suction control unit 160 can be set according to the amount of solvent in each application area 11 before depressurization. For example, the upper opening 161 of the suction control unit 160 facing the application area 11 where the application layer with a large amount of solvent before depressurizing is formed, and the opening 161 on the upper side of the suction control unit 160 facing the application area 11 where the application layer with a small amount of solvent is formed. It can be formed larger than the upper opening 161 of the suction control unit 160. In this way, by setting the size of the upper opening 161 according to the amount of solvent in the application area 11 facing each suction control unit 160, a plurality of applications with different amounts of solvent applied on one substrate 10 can be performed. Areas 11 can be dried simultaneously in the same drying process.

The gas supply unit 170 includes, for example, a gas supply source 171, a mass flow controller 172, and an opening/closing valve 173. The gas supply source 171 is connected to the chamber 110 through a pipe in which the mass flow controller 172 and the on-off valve 173 are installed, and supplies an inert gas such as nitrogen gas to the inside of the chamber 110. The supply amount of inert gas can be adjusted by the mass flow controller 172.

The decompression unit 180 depressurizes the interior of the chamber 110 to an atmospheric pressure lower than atmospheric pressure. The pressure reducing unit 180 includes a pressure reducing source 181 and an Adaptive Pressure Control (APC) valve 182. As the pressure reduction source 181, for example, a dry pump, mechanical booster pump, turbo molecular pump, etc. are used. The pressure reduction source 181 is connected to the chamber 110 through a pipe in which the APC valve 182 is installed, and depressurizes the inside of the chamber 110. The atmospheric pressure inside the chamber 110 is adjusted by the APC valve 182 and reduced to, for example, 1 Pa or less. The pressure reduction profile is correlated with the evaporation behavior of the solvent in the application layer and is an important control parameter for realizing uniform drying. The exhaust port 111 of the chamber 110 is disposed in an isotropic position with respect to the substrate holding stage 120 . For example, it is disposed at a position corresponding to the central part of the substrate holding stage 120 when viewed from the top.

The relative moving part 190 moves the side wall part 130, the partition 140, the baffle plate 150, and the suction control part 160 up and down with respect to the substrate holding stage 120. The relative moving unit 190 may elevate the side wall 130, the partition 140, the baffle plate 150, and the suction control unit 160 without raising or lowering the substrate holding stage 120. ), the substrate holding stage 120 may be raised and lowered without lifting the partition 140, the baffle plate 150, and the suction control unit 160, and the side wall portion 130, the baffle plate 140, and the baffle plate 150 and the suction control unit 160 may be raised and lowered, and the substrate holding stage 120 may be raised and lowered in the direction opposite to these moving directions.

＜Reduced pressure drying method＞

Next, a reduced-pressure drying method using the reduced-pressure drying apparatus 100 configured as described above will be described. In addition, the application layer of the application area 11 of the substrate 10 may be used for manufacturing an organic EL light-emitting diode, may be used for manufacturing a quantum dot light-emitting device, or may be used for manufacturing an organic thin-film transistor. It can be anything.

First, the relative moving part 190 simultaneously raises the side wall part 130, the partition 140, the baffle plate 150, and the suction control part 160 with respect to the substrate holding stage 120. When the opening and closing shutter of the chamber 110 is opened, the transfer device (not shown) moves the substrate 10 on which the coating layer containing the solvent is formed in the plurality of application areas 11 from the outside of the vacuum drying device 100 to the chamber ( It is brought into the interior of 110 and placed on the substrate holding stage 120 . When the substrate holding stage 120 holds the substrate 10 and the opening/closing shutter of the chamber 110 is closed, the relative moving part 190 moves the side wall 130, the partition 140, the rectifying plate 150, and The suction control unit 160 is simultaneously lowered relative to the substrate holding stage 120 to enter the state shown in FIG. 1 .

Next, the gas supply unit 170 supplies an inert gas to the inside of the chamber 110 to create an inert gas atmosphere inside the chamber 110. Next, the pressure reducing unit 180 depressurizes the interior of the chamber 110 in an inert gas atmosphere. Generally, at the beginning of the pressure reduction process, the inert gas has a significant influence on the evaporation of the solvent present at the end of the application area 11. The inert gas and solvent vapor existing near the upper surface of the substrate 10 becomes an airflow, passes through the through hole 151 of the rectifying plate 150 and the upper opening 161 of the suction control unit 160, and enters the chamber. It is transported to the exhaust port 111 of (110). At this time, the side wall portion 130, partition 140, rectifying plate 150, and suction control portion 160 regulate the air flow from near the upper surface of the substrate 10 toward the exhaust port 111 of the chamber 110. . Additionally, since the solvent vapor is heavier than the inert gas, first, in the area surrounded by the side wall portion 130, partition 140, and baffle plate 150, the area below the inert gas is filled with solvent vapor. . And, after the solvent vapor spreads over the entire surface of each application area 11, it spreads upward while being suppressed from spreading to other application areas 11 by the partition 140, so that each application area 11 ) The unevenness of vapor pressure within the plane is reduced.

As the pressure reduction further progresses to 10 Pa or less, the influence of the inert gas on the evaporation of the solvent decreases, and controlling the exhaust speed of the vapor generated from each application area 11 by evaporation under reduced pressure is used in each application area. This is a factor for uniformizing the film thickness of the application layer in the application area 11. In this embodiment, the opening ratio of the portion of the baffle plate 150 facing each application area 11 and the size and shape of the upper opening 161 of each suction control unit 160 are determined by each application before depressurizing exhaust. Since it is set according to the amount of solvent in the area 11, and the space on each application area 11 is partitioned by the side wall 130 and the partition 140, the decompression speed of the entire chamber 110 is the same. , the vapor generated from each application area 11 can be exhausted at different speeds depending on each application area 11. As a result, reduced-pressure drying of the entire application area 11 can be completed simultaneously through the same drying process. In addition, in the area located above each application area 11 of the baffle plate 150, the opening ratio of the area facing the central part of each application area 11 is set to be larger than the opening ratio of the area facing the outer periphery. Therefore, drying unevenness due to rapid drying of the outer peripheral portion of each application area 11 and slow drying of the central portion can be reduced. Accordingly, the film thickness of the application layer formed in each application area 11 of the substrate 10 can be made uniform within the plane of the substrate 10.

Here, the adjustment of the evaporation rate of the solvent is determined by the vertical distance L1 from the substrate 10 to the baffle plate 150, the distance L2 from the side wall 130 to the end of the application area 11, Adjustment of the distance L3 from the partition 140 to the end of the application area 11, the distribution of the through holes 151 of the baffle plate 150, and the area of the upper opening 161 of the suction control unit 160, etc. is done by The distance L1 from the substrate 10 to the baffle plate 150 is preferably long enough that the tendency of the opening pattern of the baffle plate 150 does not appear in the evaporation distribution of the solvent from the substrate 10, for example. , it is preferable that the distance be at least twice the diameter of the through hole 151. In addition, the distance L2 from the side wall 130 to the end of the application area 11 and the distance L3 from the partition 140 to the end of the application area 11 are about the same distance, and are as close as possible. The shorter one has a higher effect of suppressing drying of the outer periphery of the application area 11. In addition, by adjusting the distribution of the through holes 151 of the baffle plate 150 and the area of the upper opening 161 of the suction control unit 160, the evaporation time of the solvent in each application area 11 can be adjusted respectively. there is. In completing the reduced-pressure drying of the entire application area 11 simultaneously through the same drying process, depending on the size of the substrate 10, the amount of solvent and the pattern of the application layer formed in each application area 11, etc. Since the conditions are different, they are adjusted appropriately.

After the reduced-pressure drying is completed, the gas supply unit 170 supplies an inert gas to the inside of the chamber 110 to return the inside of the chamber 110 to the atmosphere before the reduced pressure. After that, the relative moving unit 190 simultaneously lifts and lowers the side wall 130, partition 140, baffle plate 150, and suction control unit 160 with respect to the substrate holding stage 120, so that the transfer device moves the substrate. (10) is taken out from the substrate holding stage 120.

＜Effect of the form of implementation＞

As described above, according to the present embodiment, the reduced pressure drying device 100 includes a side wall portion 130 and a partition 140 arranged to partition the space above each application area 11, and a side wall portion ( It is provided with a baffle plate 150 that blocks the area surrounded by 130) from above. For this reason, during reduced pressure drying, the space above each application area 11 can be filled with solvent vapor below the inert gas, so that the solvent vapor evaporates from the application layer formed in each application area 11. It is possible to suppress uneven vapor pressure of the solvent. As a result, it is possible to suppress drying unevenness from occurring in each application area 11.

Additionally, if the variation in the film thickness of the coating layer within the surface of the substrate 10 when using a conventional reduced-pressure drying device (a reduced-pressure drying device without the partition 140 and the suction control unit 160) is set to 100, the present disclosure By using the reduced-pressure drying apparatus 100, the variation in the film thickness of the coating layer within the surface of the substrate 10 was improved to about 80, and a result was obtained.

For example, when forming a pattern on a substrate of 2500 mm In this case, the effect of the reduced pressure drying apparatus 100 of the present disclosure is noticeable.

［Variation example］

It goes without saying that the present disclosure is not limited to the embodiments described so far, and various modifications can be made without departing from the spirit thereof. Additionally, the above-mentioned embodiment and the modifications shown below may be combined in any way as long as they function normally.

(Variation Example 1)

The difference from the embodiment is that a temperature control unit for adjusting the temperature of the substrate holding stage 120 and the side wall 130 is installed, and the side wall 130, partition 140, and baffle plate 150 are installed. It is thermally connected. As a temperature control unit, a chiller or a Peltier element through which cooling water flows is used. By cooling the substrate holding stage 120 and the side wall portion 130, the space surrounded by the substrate 10, the rectifying plate 150, the substrate holding stage 120, the side wall portion 130, and the buffing plate 150. can be cooled. Accordingly, before placing the substrate 10 on the substrate holding stage 120, the saturated vapor pressure of the solvent in the space surrounded by the substrate holding stage 120, the side wall portion 130, and the baffle plate 150 can be lowered. Therefore, when the substrate 10 is placed on the substrate holding stage 120, the space around the substrate 10 reaches the saturated vapor pressure faster than at room temperature, so evaporation of the solvent in the coating layer is stopped faster than at room temperature. You can do it. In addition, by cooling the space around the substrate 10 and lowering the saturated vapor pressure, the absolute amount of solvent volatilized in the surrounding space can be reduced exponentially compared to at room temperature, and as a result, the amount of solvent volatilized in the surrounding space can be reduced exponentially. Non-uniformity in drying speed can be suppressed compared to at room temperature. In addition, the side wall portion 130 and the flow plate 150 adsorb solvent vapor by cooling, but after drying under reduced pressure, the solvent collected by the flow plate 150 is vaporized again by heating the side wall portion 130. Solvent can be released from the flow plate 150. Additionally, as the temperature adjustment unit, a configuration that adjusts the temperature of at least one of the substrate holding stage 120, the side wall portion 130, and the partition 140 may be applied.

(Variation 2)

FIG. 3 shows a longitudinal cross-sectional view of the reduced pressure drying apparatus 100 according to Modification Example 2. The difference from the embodiment is that a partition 140 is also placed between the side wall portion 130 and the application area 11. Accordingly, it is possible to create a state where all sides of the application area 11 are adjacent to the partition 140 when viewed in plan, making it possible to further improve the film thickness uniformity of the application layer of the substrate 10.

(Variation 3)

FIG. 4 shows a longitudinal cross-sectional view of the reduced pressure drying apparatus 100 according to Modification Example 3. The difference from the embodiment is that the elastic body 141 is installed at the lower end of the partition 140. Accordingly, since the elastic body 141 is deformed when it physically contacts the substrate 10, the space between the partition 140 and the substrate 10 can be sealed without destroying the substrate 10. Therefore, the vapor between each application area 11 can be completely blocked, and the influence of vapor from the adjacent application area 11 in each application area 11 can be eliminated, thereby reducing the film of the application layer of the substrate 10. It becomes possible to further improve thickness uniformity.

(Variation Example 4)

FIG. 5 shows a longitudinal cross-sectional view of the reduced pressure drying apparatus 100 according to Modification Example 4. The difference from the embodiment is that the elastic body 131 is installed at the lower end of the side wall portion 130. Accordingly, the distance between the buffing plate 150 and the substrate 10 can be adjusted by driving the relative moving part 190 within the deformable range of the elastic body 131. Accordingly, the gap between the partition 140 and the substrate 10 can be made smaller, making it possible to further improve the film thickness uniformity of the coating layer of the substrate 10.

(Other variations)

The opening ratio of the portion of the baffle plate 150 facing each application area 11 may be set to the same value. In addition, the opening ratio of the area facing each application area 11 is varied depending on the amount of solvent in each application area 11 before the reduced pressure exhaustion, and the area opposing the central part of each application area 11 and the outer peripheral part are made different. The opening ratio of the opposing parts may be set to the same value.

The reduced pressure drying apparatus 100 does not need to be provided with the suction control unit 160.

According to the reduced pressure drying apparatus and reduced pressure drying method of the present disclosure, when drying a substrate having a plurality of application areas on which a coating layer containing a solvent is formed under reduced pressure, occurrence of drying unevenness in each application area can be suppressed. .

<Industrial applicability>

The reduced-pressure drying apparatus and reduced-pressure drying method of the present disclosure can be suitably applied to the production of a display panel in which the film thickness of the coating layer formed in a plurality of coating regions on the substrate is uniform in plane.

10 Substrate 11 Application area
100 reduced pressure drying unit 110 chamber
111 exhaust port 120 substrate holding stage
130 side wall 131 elastic body
140 partition 141 elastic body
150 rectifier plate 151 through hole
160 suction control unit 161 upper opening
170 gas supply unit 171 gas source
172 Mass flow controller 173 Open/close valve
180 pressure reduction unit 181 pressure reduction source
182 APC valve 190 relative moving part

Claims (11)

a chamber containing a substrate having a plurality of application areas on which an application layer containing a solvent is formed;
Inside the chamber, a substrate holding stage for holding the substrate;
a side wall portion disposed around the substrate held on the substrate holding stage;
a partition disposed inside the side wall portion and dividing the space on the plurality of application areas of the substrate for each application area;
a baffle plate disposed at a position opposite the substrate to block the space divided by the side wall portion and the partition, the baffle plate having a plurality of through holes;
a gas supply unit that supplies an inert gas to the interior of the chamber;
Equipped with a pressure reducing unit that depressurizes the interior of the chamber,
Decompression drying device. In claim 1,
The opening ratio of the rectifying plate in the area facing the application area where the application layer having a solvent amount of a predetermined amount is formed is the ratio of the opening ratio of the baffle plate in the area facing the application area where the application layer having a solvent amount less than the predetermined amount is formed. greater than the aperture ratio of the rectifying plate,
Decompression drying device. In claim 1 or claim 2,
The opening ratio of the baffle plate in the portion facing the central portion of each of the plurality of application regions is greater than the aperture ratio of the baffle plate in the portion facing the outer peripheral portion of each of the plurality of application regions.
Decompression drying device. The method according to any one of claims 1 to 3,
A plurality of suction control units disposed at a position opposite to each of the plurality of application areas on an opposite side of the substrate holding stage than the side wall portion and the partition, and controlling suction of gas on each application area by the pressure reduction unit. Equipped with more,
The plurality of suction control units are each formed in a cylindrical shape having a first opening closer to the application area and a second opening farther from the application area,
The second opening of the suction control unit facing the application area where the application layer having a solvent amount less than the predetermined amount is formed is the second opening of the suction control unit facing the application area where the application layer having a solvent amount less than the predetermined amount is formed. Formed larger than the second opening,
Decompression drying device. The method according to any one of claims 1 to 4,
The partition is arranged to surround the entire circumference of the plurality of application areas when viewed from the plane of the substrate.
Decompression drying device. The method according to any one of claims 1 to 5,
A reduced pressure drying apparatus wherein the partition is arranged so as not to contact the substrate. The method according to any one of claims 1 to 5,
An elastic body in contact with the substrate is disposed at an end of the partition closer to the substrate.
Decompression drying device. The method according to any one of claims 1 to 7,
Further comprising a temperature control unit that adjusts the temperature of at least one of the substrate holding stage, the side wall portion, and the partition,
Decompression drying device. The method according to any one of claims 1 to 8,
Further comprising a relative moving part that relatively moves the substrate holding stage, the side wall part, and the partition,
Decompression drying device. The method according to any one of claims 1 to 9,
The rectifying plate is composed of a plurality of punching plates or a plurality of wire mesh,
Decompression drying device. A reduced pressure drying method using the reduced pressure drying device according to any one of claims 1 to 10,
Inside the chamber, the substrate is held by the substrate holding stage,
By arranging the side wall portion around the substrate held on the substrate holding stage and further arranging a partition inside the side wall portion, the space on the plurality of application areas of the substrate is divided for each application area, The space divided by the side wall portion and the partition is blocked with the baffle plate,
Supplying an inert gas to the interior of the chamber through the gas supply unit,
Drying the application layer formed on the substrate by depressurizing the interior of the chamber with the pressure reducing unit,
Reduced pressure drying method.