WO2022188250A1 - 使光刻线条变窄的方法及光刻机 - Google Patents

使光刻线条变窄的方法及光刻机 Download PDF

Info

Publication number
WO2022188250A1
WO2022188250A1 PCT/CN2021/090548 CN2021090548W WO2022188250A1 WO 2022188250 A1 WO2022188250 A1 WO 2022188250A1 CN 2021090548 W CN2021090548 W CN 2021090548W WO 2022188250 A1 WO2022188250 A1 WO 2022188250A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
lithography
exposure
connecting block
narrowing
Prior art date
Application number
PCT/CN2021/090548
Other languages
English (en)
French (fr)
Inventor
李荣宝
Original Assignee
上海大溥实业有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 上海大溥实业有限公司 filed Critical 上海大溥实业有限公司
Publication of WO2022188250A1 publication Critical patent/WO2022188250A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Definitions

  • the invention relates to the technical field of lithography, in particular to a method for narrowing lithography lines and a lithography machine.
  • Photolithography is a main process in the production of planar transistors and integrated circuits, and is a processing technology for scribing the mask (such as silicon dioxide) on the surface of semiconductor wafers for localized diffusion of impurities.
  • the mask such as silicon dioxide
  • the conventional general photolithography process is to lay photoresist on a semiconductor wafer, and then set a mask on the photoresist, and the mask is provided with a hollow position as required, and then the exposure is performed. After post, developing and etching operations, the desired pattern can be left on the semiconductor wafer.
  • the purpose of the present invention is to solve the deficiencies of the prior art, and to provide a method and a lithography machine for narrowing the lithography lines, which can meet the exposure requirements of nanometers, help to narrow the width of the lithography lines, and have Helps reduce the cost of the lithography process.
  • a method for narrowing the lithography lines is designed, and at least two exposures are performed to form the required lithography portions at the overlapping portions of the at least two exposures.
  • the method includes the following steps: S1. performing first exposure, and the exposure degree is half of the required exposure degree; S2. moving or replacing the mask; S3. performing re-exposure, and the exposure degree is half of the required exposure degree; wherein , and the overlapping exposure portion of the two exposures forms the lithography portion.
  • the method includes the following steps: S1. performing first exposure; S2. moving or replacing the mask; S3. performing re-exposure; wherein, the overlapping non-exposed parts of the two exposures form the lithography part.
  • the method for moving the reticle in S2 is as follows: a connecting block is arranged between the reticle and the fixing member, and the connecting block has a variable section with a length of X. Initially, the reticle, the connecting block and the fixed part are A force F is applied to the parts, so that the three parts are attached to each other in turn. When the reticle needs to be displaced by X, the displacement of the reticle can be realized by removing the variable section of the connecting block.
  • variable section is a thin film obtained by a vacuum coating method.
  • the method of moving the reticle in S2 is as follows: a connecting block is arranged between the reticle and the fixing part, and the length of the connecting block changes with the change of temperature. A force F is applied to make the three fit in sequence. When the mask plate needs to be displaced by X, the temperature of the connecting block is changed to change its length, and the displacement of the mask plate can be realized.
  • the lithography part is finally obtained by developing and etching.
  • the invention also relates to a lithography machine used for the method for narrowing lithography lines, comprising a light source and at least one mask.
  • the present invention further relates to a lithography machine used for the method for narrowing lithography lines, comprising a mask, a fixing member and a connecting block, wherein the connecting block is arranged on the mask and the fixing Between the pieces, the connecting block has a variable segment of length X.
  • the present invention further relates to a lithography machine used for the method for narrowing lithography lines, comprising a mask, a fixing member and a connecting block, wherein the connecting block is arranged on the mask and the fixing The length of the connecting block between the reticle and the fixing piece varies with the temperature.
  • the present invention has a simple and feasible combined structure, and has the advantages that a method for narrowing the lithography lines is originally designed, and the required light is formed in the overlapping part of the exposure through at least two successive exposures.
  • the engraved part can overcome the deficiencies of the existing technology to meet the nano-level exposure requirements, and help to reduce the cost of the lithography process; it also designs a specific method and equipment structure to realize the displacement of the mask, and realizes the nano-level and sub-level. Nanoscale reticle displacement.
  • FIG. 1 is a schematic diagram of an exposure flow in the prior art.
  • FIG. 2 is a schematic diagram of the exposure flow of the present invention in Example 1.
  • FIG. 2 is a schematic diagram of the exposure flow of the present invention in Example 1.
  • FIG. 3 is a schematic diagram of the exposure flow of the present invention in Example 2.
  • FIG. 4 is a schematic diagram of a method for realizing mask displacement according to the present invention in Embodiment 6.
  • FIG. 4 is a schematic diagram of a method for realizing mask displacement according to the present invention in Embodiment 6.
  • FIG. 5 is an enlarged schematic diagram of the thin film part of the method for realizing mask displacement according to the present invention in Example 6.
  • FIG. 5 is an enlarged schematic diagram of the thin film part of the method for realizing mask displacement according to the present invention in Example 6.
  • This embodiment provides a method for narrowing lithography lines, and performs at least two exposures to form a desired lithography portion at the overlapping portion of the at least two exposures.
  • the method includes the following steps:
  • the overlapping exposure portion of the two exposures forms the lithography portion, and the exposure degree can be adjusted by changing parameters such as exposure time and light source intensity.
  • a scribe line with a width of D is provided on the mask.
  • the method includes the following steps:
  • the overlapping non-exposure portion of the two exposures forms the lithography portion.
  • a non-hollow portion with a width of D is provided on the mask, and the rest of the portions are hollowed out scribe lines.
  • the steps of this embodiment are basically the same as those of Embodiment 1 and Embodiment 2, except that the step of moving the mask in S2 is replaced by replacing the mask. That is, at least two masks are prefabricated, and then the first exposure of S1 is performed first, and then the masks are replaced, and then the exposure is performed again. Therefore, a required overlapping exposure portion is formed by the overlapping position of the scribe lines of the two masks, or a required overlapping non-exposure portion is formed by the non-scribed portions of the two masks.
  • the required lithography part has two mutually perpendicular lines, so in S2, after the required distance is displaced in the vertical direction of the two lines, the exposure of S3 is performed again, so as to realize the formation of several narrow-width lines. scribe.
  • the required lithography part has two mutually perpendicular lines, so first follow the steps S1-S3 to obtain the first line, and then follow the steps S1-S3 again to obtain the second line, so as to achieve The scribe of several narrow width lines.
  • This embodiment exemplarily shows a method for realizing the displacement of the reticle, that is, the positional change of the reticle is realized through a fixing member and a connecting block, and a connecting block is arranged between the reticle and the fixing member.
  • the connecting block has a variable segment with a length X, and initially a force F is applied to the mask, the connecting block and the fixing member, so that the three are in close contact with each other in turn.
  • the changeable section of the connection block can be removed to realize the displacement of the reticle.
  • the connecting block is fixed on the mask, and the contact surface between the connecting block and the fixing member is provided with a thin film as a variable section, and the thickness of the film is For the displacement X required for the narrowing of the line width, having the corresponding solvent enables the film to dissolve rapidly.
  • Appropriate force F is applied on both sides of the fixing member and the reticle to press the three together, and the total length of the reticle, the connecting block and the fixing member is L.
  • a corresponding solvent is used to dissolve the thin film, so that the total length of the three is changed to L-X, and the reticle realizes the displacement of X.
  • the thin film can be obtained by vacuum coating method.
  • Vacuum coating technology is a mature prior art. The main steps are roughly as follows: place the connecting block in the vacuum cover, the side that needs to be coated is downward, and the surface area of this side is as small as possible. Smaller to facilitate complete melting of the film.
  • an electric heating molybdenum boat and an electron gun are placed in the vacuum cover. After closing the vacuum cover, the vacuum is evacuated to E-6 level. Heating and bombarding the object to be plated with an electron gun makes it evaporate into a molecular free state and fill the vacuum cover.
  • the side under the connection block first contacts the molecules in the free state. Due to the molecular adsorption force, a film is formed on the side under the connection block. , its thickness can be controlled according to the evaporation amount and evaporation time, and can be measured at the same time as the coating, and the thickness of the coating can be controlled to a level far below the sub-nanometer level.
  • This embodiment further exemplarily shows a method for realizing the displacement of the reticle, that is, the movement of the reticle is realized by the principle of thermal expansion and cold contraction.
  • a connecting block is provided between the mask and the fixing member, and the connecting block has the characteristic of changing its length with temperature, that is, the length of the connecting block between the mask and the fixing member changes with the change of temperature.
  • a force F is applied to the mask, the connecting block and the fixing piece, so that the three are in close contact with each other in turn.
  • the connecting block is made of metal material, and the thermal expansion coefficient of the metal material is in the order of E-6.
  • the specific temperature change of the connection block can be calculated according to the required displacement, so that nanometer or even sub-nanometer displacement of the mask can be realized.
  • the semiconductor wafer with the above-mentioned lithography portion can be finally obtained by developing and etching.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种使光刻线条变窄的方法及光刻机，进行至少两次曝光，以在至少两次曝光的重叠部分（7、10）形成所需的光刻部（5）。这种方法和光刻机的组合结构简单，使光刻线条变窄，通过至少两次的先后曝光，在曝光的重叠部分（7、10）形成所需的光刻部（5），能够满足纳米级的曝光需求，且降低光刻工艺的成本；还设计了实现掩膜版（1）位移的具体方法和设备结构，实现了纳米级和亚纳米级的掩膜版位移。

Description

使光刻线条变窄的方法及光刻机 技术领域
本发明涉及光刻技术领域，具体来说是一种使光刻线条变窄的方法及光刻机。
背景技术
光刻是平面型晶体管和集成电路生产中的一个主要工艺，是对半导体晶片表面的掩蔽物(如二氧化硅)进行刻划，以便进行杂质的定域扩散的一种加工技术。
参见图1所示，现有的一般光刻工艺是在半导体晶片上敷设有光刻胶，而后在光刻胶上在设置掩膜版，掩膜版上根据需要设有镂空位置，在进行曝光后、显影和刻蚀的操作后，即可在半导体晶片上留下所需的图案。
但是，曝光时，由于受到光源所发出的光本身的波长等各种因素的限制，使得在很长时间内无法达到纳米级的图案曝光。对此，现有技术通过透镜等外部设备，改变光源发出的光，从而减小波长，或通过波长为10-14纳米的极紫外光作为光源进行光刻。但是上述方法存在着成本较高、以及光刻线条宽度难以进一步变窄等的问题，例如极紫外光的曝光通常只能实现11nm的曝光宽度。
发明内容
本发明的目的在于解决现有技术的不足，提供一种使光刻线条变窄的方法及光刻机，能满足纳米级的曝光需求，有助于使光刻线条的宽度变窄，且有助 于降低光刻工艺的成本。
为了实现上述目的，设计一种使光刻线条变窄的方法，进行至少两次曝光，以在所述的至少两次曝光的重叠部分形成所需的光刻部。
所述的使光刻线条变窄的方法还具有如下优选的技术方案：
所述的方法包括如下步骤：S1.进行首次曝光，曝光程度为所需曝光程度的一半；S2.移动或更换掩膜版；S3.进行再次曝光，曝光程度为所需曝光程度的一半；其中，两次曝光的重叠曝光部分形成所述的光刻部。
所述的方法包括如下步骤：S1.进行首次曝光；S2.移动或更换掩膜版；S3.进行再次曝光；其中，两次曝光的重叠非曝光部分形成所述的光刻部。
S2中移动掩膜版的方法具体如下：在掩膜版和固定件之间设有连接块，所述的连接块具有一长度为X的可变化段，初始时对掩膜版、连接块和固定件施加作用力F，使得三者依次相互贴合，当需要使掩膜版进行X的位移时，去除所述的连接块的可变化段，即可实现掩膜版的位移。
所述的可变化段为通过真空镀膜法获得的薄膜。
S2中移动掩膜版的方法具体如下：在掩膜版和固定件之间设有连接块，所述的连接块的长度随温度的变化而变化，初始时对掩膜版、连接块和固定件施加作用力F，使得三者依次贴合，当需要使掩膜版进行X的位移时，改变所述的连接块的温度使得其长度发生变化，即可实现掩膜版的位移。
在S3之后，通过显影、蚀刻最终获得所述的光刻部。
本发明还涉及一种用于所述的使光刻线条变窄的方法的光刻机，包括光源和至少一块掩膜版。
本发明再涉及一种用于所述的使光刻线条变窄的方法的光刻机，包括掩膜版、固定件和连接块，所述的连接块设置于所述的掩膜版和固定件之间，所述的连接块具有一长度为X的可变化段。
本发明又涉及一种用于所述的使光刻线条变窄的方法的光刻机，包括掩膜版、固定件和连接块，所述的连接块设置于所述的掩膜版和固定件之间，所述的连接块在所述的掩膜版和固定件之间的长度随温度的变化而变化。
本发明同现有技术相比，组合结构简单可行，其优点在于：原创性地设计了使光刻线条变窄的方法，通过至少两次的先后曝光，在曝光的重叠部分形成所需的光刻部，其能够克服现有技术的不足满足纳米级的曝光需求，且有助于降低光刻工艺的成本；还设计了实现掩膜版位移的具体方法和设备结构，实现了纳米级和亚纳米级的掩膜版位移。
附图说明
图1是现有技术的曝光流程示意图。
图2是实施例1中本发明的曝光流程示意图。
图3是实施例2中本发明的曝光流程示意图。
图4是实施例6中本发明实现掩膜版位移的方法的示意图。
图5是实施例6中本发明实现掩膜版位移的方法的薄膜部分放大示意图。
图中：1.掩膜版 2.光刻胶 3.半导体晶片 4.刻线 5.光刻部 6.首次曝光部分 7.重叠曝光部分 8.非镂空部 9.首次未曝光部分 10.重叠非曝光部分 11.固定件 12.连接块 13.可变化段。
具体实施方式
下面结合附图对本发明作进一步说明，这种装置及方法的结构和原理对本专业的人来说是非常清楚的。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
本实施方式提供一种使光刻线条变窄的方法，进行至少两次曝光，以在所述的至少两次曝光的重叠部分形成所需的光刻部。以下，结合附图和实施例进行进一步的示例说明。
实施例1
在本实施例中，先后进行两次曝光操作，并在两次曝光的重叠曝光位置形成所需的图案条纹。所述的方法包括如下步骤：
S1.进行首次曝光，曝光程度为所需曝光程度的一半；
S2.移动掩膜版；
S3.进行再次曝光，曝光程度为所需曝光程度的一半；
其中，两次曝光的重叠曝光部分形成所述的光刻部，曝光程度可通过改变曝光时间和光源强度等参数来进行调整。
具体而言，结合图2所示，在光刻过程中，在所述的掩膜版上设有宽度为D 的刻线。
在S1中，首先曝光t秒，t为光刻部在当前光照强度下所需的曝光时间T的一半，从而使光刻胶的需曝光线条受到改变其性能所需时间一半时间的曝光照射。
在S2中，首先将掩膜扳与半导体晶片向垂直于无需曝光线条的方向移动距离X，X＜D。
在S3中，再次曝光t秒，得到如图2所示的D-X宽度的、被有效曝光的线条。
实施例2
在本实施例中，先后进行两次曝光操作，并在两次曝光的重叠非曝光位置形成所需的图案条纹。所述的方法包括如下步骤：
S1.进行首次曝光。
S2.移动掩膜版。
S3.进行再次曝光。
其中，两次曝光的重叠非曝光部分形成所述的光刻部。
具体而言，结合图3所示，在光刻过程中，在所述的掩膜版上设有宽度为D的非镂空部，其余部位皆为镂空的刻线位置。
在S1中，首先曝光t秒，得到宽度为D的非曝光线条。
在S2中，首先将掩膜扳与半导体晶片向垂直于需曝光线条的方向移动距离X，X＜D。
在S3中，再次曝光t秒，S1中非曝光线条中一段长度为X的部分被曝光，从而能得到如图3所示的D-X宽度的、未被曝光的线条。
实施例3
本实施例的步骤与实施例1和实施例2基本相同，区别在于，将S2中移动掩膜版的步骤替换为更换掩膜版。即预制有至少两块掩膜版，而后首先进行S1的首次曝光，而后更换掩膜版，再进行再次曝光。从而，通过两块掩膜版的刻线的重叠位置形成所需的重叠曝光部分，或通过两块掩膜版的非刻线部分形成所需的重叠非曝光部分。
实施例4
在实际电路所需的同一图案中，有时具有多条线条，此时，仍按前述的S1-S3进行操作，以同时实现多条线条的曝光。具体在S2中，即分别沿各个线条的垂直方向运动相应的距离，而后再进行S3的再次曝光操作，从而同时实现对多条线条的刻划。
例如，所需的光刻部具有两条相互垂直的线条，所以在S2中，沿两条线条的垂直方向位移所需的距离之后，再进行S3的再次曝光，从而实现若干条窄宽度线条的刻划。
实施例5
在实际电路所需的同一图案中，有时具有多条线条，此时，仍按前述的S1-S3进行操作，以分别实现多条线条的曝光。即分别进行若干次S1-S3的步骤操作，以实现若干条线条的刻划。
例如，所需的光刻部具有两条相互垂直的线条，所以首先按照S1-S3的步骤操作以得到第一条线条，而后再次按照S1-S3的步骤操作以得到第二条线条，从而实现若干条窄宽度线条的刻划。
实施例6
本实施例示例性示出一种实现掩膜版位移的方法，即通过固定件和连接块实现对掩膜版的位置变化，在掩膜版和固定件之间设有连接块，所述的连接块具有一长度为X的可变化段，初始时对掩膜版、连接块和固定件施加作用力F，使得三者依次紧密贴合。当需要使掩膜版进行X的位移时，去除所述的连接块的可变化段，即可实现掩膜版的位移。
例如，结合图4和图5所示，所述的连接块固定在掩膜版上，所述的连接块与固定件的接触面上设有一层薄薄的薄膜作为可变化段，薄膜的厚度为线条宽度变窄所需的位移X，具有相应的溶剂能使所述的薄膜迅速溶解。
在固定件和掩膜版两侧施加适当的力F使得三者压紧，掩膜版、连接块和固定件的总长度为L。当需要移动掩膜版时，采用相应的溶剂溶解掉所述的薄膜，使得三者的总长度变化为L－X，掩膜版从而实现了X的位移。
其中，所述的薄膜可用真空镀膜方法获得，真空镀膜技术是成熟的现有技术，其主要步骤大致为：将连接块放置在真空罩内，需要镀膜的一侧向下，该 侧的表面积尽量小些以便于薄膜的彻底溶化。同时真空罩内放置有电加热钼舟和电子枪，关闭真空罩后，抽真空至E－6级。进行加热并通过电子枪轰击被镀物，使之蒸发为分子游离状态，充满真空罩内，连接块下方的侧面首先接触到游离状态的分子，由于分子吸附力作用，在连接块下方的侧面形成薄膜，其厚度可根据蒸发量和蒸镀时间控制，并能在镀膜的同时测量得到，并且镀膜的厚度能控制在远低于亚纳米级的程度。
实施例7
本实施例再示例性示出一种实现掩膜版位移的方法，即通过热胀冷缩原理实现掩膜版的移动。在掩膜版和固定件之间设有连接块，所述的连接块具有长度随温度变化的特性，即连接块在掩膜版和固定件之间的长度随温度的变化而变化，初始时对掩膜版、连接块和固定件施加作用力F，使得三者依次紧密贴合。当需要使掩膜版进行X的位移时，改变所述的连接块的温度使得其长度发生变化，即可实现掩膜版的位移。
例如所述的连接块由金属材料制成，金属材料的热膨胀系数是E-6数量级。连接块的具体温度的变化能根据所需位移的量通过计算得到，这样就能实现掩膜版的纳米、甚至亚纳米级的位移。
实施例8
在本实施例中，通过前述方法完成所需线条的刻划后，再通过显影、蚀刻即可最终得到具有所述的光刻部的半导体晶片。

Claims (10)

  1. 一种使光刻线条变窄的方法，其特征在于进行至少两次曝光，以在所述的至少两次曝光的重叠部分形成所需的光刻部。
  2. 如权利要求1所述的使光刻线条变窄的方法，其特征在于所述的方法包括如下步骤：
    S1.进行首次曝光，曝光程度为所需曝光程度的一半；
    S2.移动或更换掩膜版；
    S3.进行再次曝光，曝光程度为所需曝光程度的一半；
    其中，两次曝光的重叠曝光部分形成所述的光刻部。
  3. 如权利要求1所述的使光刻线条变窄的方法，其特征在于所述的方法包括如下步骤：
    S1.进行首次曝光；
    S2.移动或更换掩膜版；
    S3.进行再次曝光；
    其中，两次曝光的重叠非曝光部分形成所述的光刻部。
  4. 如权利要求2或3所述的使光刻线条变窄的方法，其特征在于S2中移动掩膜版的方法具体如下：在掩膜版和固定件之间设有连接块，所述的连接块具有一长度为X的可变化段，初始时对掩膜版、连接块和固定件施加作用力F， 使得三者依次相互贴合，当需要使掩膜版进行X的位移时，去除所述的连接块的可变化段，即可实现掩膜版的位移。
  5. 如权利要求4所述的使光刻线条变窄的方法，其特征在于所述的可变化段为通过真空镀膜法获得的薄膜。
  6. 如权利要求2或3所述的使光刻线条变窄的方法，其特征在于S2中移动掩膜版的方法具体如下：在掩膜版和固定件之间设有连接块，所述的连接块的长度随温度的变化而变化，初始时对掩膜版、连接块和固定件施加作用力F，使得三者依次贴合，当需要使掩膜版进行X的位移时，改变所述的连接块的温度使得其长度发生变化，即可实现掩膜版的位移。
  7. 如权利要求2或3所述的使光刻线条变窄的方法，其特征在于在S3之后，通过显影、蚀刻最终获得所述的光刻部。
  8. 一种用于如权利要求1所述的使光刻线条变窄的方法的光刻机，其特征在于包括光源和至少一块掩膜版。
  9. 一种用于如权利要求4所述的使光刻线条变窄的方法的光刻机，其特征在于包括掩膜版、固定件和连接块，所述的连接块设置于所述的掩膜版和固定件之间，所述的连接块具有一长度为X的可变化段。
  10. 一种用于如权利要求4所述的使光刻线条变窄的方法的光刻机，其特征在于包括掩膜版、固定件和连接块，所述的连接块设置于所述的掩膜版和固定件之间，所述的连接块在所述的掩膜版和固定件之间的长度随温度的变化而变化。
PCT/CN2021/090548 2021-03-09 2021-04-28 使光刻线条变窄的方法及光刻机 WO2022188250A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110253880.3 2021-03-09
CN202110253880.3A CN112882355B (zh) 2021-03-09 2021-03-09 使光刻线条变窄的方法及光刻机

Publications (1)

Publication Number Publication Date
WO2022188250A1 true WO2022188250A1 (zh) 2022-09-15

Family

ID=76053847

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/090548 WO2022188250A1 (zh) 2021-03-09 2021-04-28 使光刻线条变窄的方法及光刻机

Country Status (2)

Country Link
CN (1) CN112882355B (zh)
WO (1) WO2022188250A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04206812A (ja) * 1990-11-30 1992-07-28 Mitsubishi Electric Corp 微細パターンの形成方法
CN1118936A (zh) * 1994-07-14 1996-03-20 现代电子产业株式会社 形成超微细图案的方法
CN102122113A (zh) * 2010-01-08 2011-07-13 中芯国际集成电路制造(上海)有限公司 光刻方法
CN102246099A (zh) * 2008-12-12 2011-11-16 Asml荷兰有限公司 致动器系统、光刻设备、控制部件位置的方法和器件制造方法
CN112445078A (zh) * 2019-08-29 2021-03-05 群创光电股份有限公司 电子装置的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3034273B2 (ja) * 1989-10-07 2000-04-17 株式会社東芝 露光方法及び露光装置
CN1212548C (zh) * 2002-03-01 2005-07-27 南亚科技股份有限公司 利用多重曝光形成孤立线的方法
CN102402123B (zh) * 2010-09-10 2013-11-06 无锡华润上华半导体有限公司 一种光刻机焦距监控方法
CN104166315B (zh) * 2014-08-14 2017-05-17 深圳市华星光电技术有限公司 曝光方法及曝光机
DE102016121374A1 (de) * 2016-11-08 2018-05-09 Aixtron Se Maskenhalterung mit geregelter Justiereinrichtung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04206812A (ja) * 1990-11-30 1992-07-28 Mitsubishi Electric Corp 微細パターンの形成方法
CN1118936A (zh) * 1994-07-14 1996-03-20 现代电子产业株式会社 形成超微细图案的方法
CN102246099A (zh) * 2008-12-12 2011-11-16 Asml荷兰有限公司 致动器系统、光刻设备、控制部件位置的方法和器件制造方法
CN102122113A (zh) * 2010-01-08 2011-07-13 中芯国际集成电路制造(上海)有限公司 光刻方法
CN112445078A (zh) * 2019-08-29 2021-03-05 群创光电股份有限公司 电子装置的制造方法

Also Published As

Publication number Publication date
CN112882355B (zh) 2023-05-23
CN112882355A (zh) 2021-06-01

Similar Documents

Publication Publication Date Title
JP3568514B2 (ja) 面内寸法差の均一性改善方法
JP5542766B2 (ja) パターン形成方法
JP5306989B2 (ja) 複数のフィールド及びアライメント・マークを有する基板を同時にパターニングする方法
KR100835326B1 (ko) 디바이스 제조 방법 및 컴퓨터 프로그램 제품
US20080213418A1 (en) Align-transfer-imprint system for imprint lithogrphy
US8133661B2 (en) Superimpose photomask and method of patterning
US20050159019A1 (en) Method for manufacturing large area stamp for nanoimprint lithography
TWI527150B (zh) 靜電鉗、微影裝置及製造靜電鉗之方法
US20080153312A1 (en) Methods for Exposure for the Purpose of Thermal Management for Imprint Lithography Processes
US20070190762A1 (en) Device manufacturing method and computer program product
TW200848921A (en) Mask mold, manufacturing method thereof, and method for forming large-sized micro pattern using mask mold
JP6300432B2 (ja) 静電クランプ、リソグラフィ装置および静電クランプを製造する方法
KR101156076B1 (ko) 이중 패터닝 리소그래피 프로세스에서 레지스트 정렬 마크들을 제공하기 위한 장치 및 방법
US20080131822A1 (en) Method of fabricating imprint lithography template
Alkaisi et al. Nanolithography in the evanescent near field
TWI475331B (zh) 微影裝置及可移除元件
JP2007027361A (ja) インプリント用モールド
US7401549B2 (en) Arrangement for transferring information/structures to wafers
US20110159209A1 (en) Pattern forming method
WO2022188250A1 (zh) 使光刻线条变窄的方法及光刻机
JP2003086537A (ja) 構造体を用いた薄膜パターン製造方法および構造体
US6221563B1 (en) Method of making an organic electroluminescent device
TW202303297A (zh) 一種基於雙層光阻的微影方法
JP2004111500A (ja) マスク、露光装置及び方法
TWI596148B (zh) 化學增幅光阻材料、共聚物及微影方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21929722

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE