WO2022183787A1 - 一种样品材料的电学性能测量方法、装置、设备和介质 - Google Patents

一种样品材料的电学性能测量方法、装置、设备和介质 Download PDF

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Publication number
WO2022183787A1
WO2022183787A1 PCT/CN2021/133106 CN2021133106W WO2022183787A1 WO 2022183787 A1 WO2022183787 A1 WO 2022183787A1 CN 2021133106 W CN2021133106 W CN 2021133106W WO 2022183787 A1 WO2022183787 A1 WO 2022183787A1
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Prior art keywords
target
sample material
probe
determined
amplitude
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PCT/CN2021/133106
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English (en)
French (fr)
Inventor
王中林
林世权
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北京纳米能源与系统研究所
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Priority to EP21928859.4A priority Critical patent/EP4303596A1/en
Priority to US18/259,680 priority patent/US20240053394A1/en
Priority to KR1020227042477A priority patent/KR20230031821A/ko
Priority to JP2022575465A priority patent/JP7479520B2/ja
Publication of WO2022183787A1 publication Critical patent/WO2022183787A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06772—High frequency probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/145—Indicating the presence of current or voltage
    • G01R19/15—Indicating the presence of current
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/145—Indicating the presence of current or voltage
    • G01R19/155—Indicating the presence of voltage

Definitions

  • the invention relates to the field of microscope measurement, in particular to a method, device, equipment and medium for measuring electrical properties of a sample material.
  • the atomic force microscope is a commonly used microscopic characterization equipment, which was originally mainly used to measure the surface microscopic topography of the sample material .
  • the electrical properties include the surface charge density of the material and the work function of the material surface.
  • KPFM Kelvin probe force microscopy
  • EFM electrostatic force microscopy
  • CAFM conductive atomic force microscopy
  • KPFM first drives the probe to vibrate by applying an alternating electrostatic force induced by an AC bias voltage, and then applies a DC voltage between the probe and the sample material.
  • the amplitude of the first-order vibration frequency of the probe vibrated by the DC voltage is 0
  • the magnitude of the DC voltage is equal to the magnitude of the contact potential difference between the sample material and the probe, so that the surface charge density of the sample material is determined according to the contact potential difference and the functional relationship between the contact potential difference and the charge density, and according to the probe
  • the difference between the work function of the needle and the contact potential difference determines the surface work function of the sample material.
  • the AC bias and DC voltage applied between the probe and the sample material will affect the electrical properties of the sample material, resulting in inaccurate measurement results.
  • the EFM first vibrates the probe fixed on the piezoelectric ceramic by applying an alternating voltage to the piezoelectric ceramic. After the probe is subjected to the electrostatic force of the sample material, its vibration amplitude and phase will change. According to the change of the vibration amplitude and phase when the probe is at different positions on the surface of the sample material, the change of the charge density on the surface of the material can be qualitatively judged.
  • the changes of the vibration amplitude and phase do not have an accurate correspondence with the value of the electrostatic force, the EFM cannot accurately determine the magnitude of the electrostatic force and the surface charge density of the sample material, and the EFM cannot determine the sample material. Surface work function.
  • the CAFM in the prior art is mainly used to measure the conductivity of the material micro-region, and cannot obtain the surface micro-electrical properties such as the surface charge and work function of the sample material.
  • the present invention provides a method, device, equipment and medium for measuring the electrical properties of a sample material, so as to solve the problem in the prior art that the electrical properties of the sample material cannot be accurately determined.
  • the present invention provides a method for measuring electrical properties of a sample material, the method comprising:
  • the target work function value of the sample material surface is determined, and according to the target amplitude, the target contact potential difference value and the pre-stored induction
  • the target amplitude of the alternating current determines a function to determine the target charge density on the surface of the sample material.
  • the determining the target amplitude of the induced alternating current generated by the vibration of the probe on the surface of the sample material includes:
  • the amplitude of the target induced alternating current is taken as the target amplitude.
  • determining the target work function value on the surface of the sample material according to the target contact potential difference value and the determined work function value of the probe includes:
  • the target contact potential difference and the determined work function value of the probe determine the difference between the probe's work function value and the target contact potential difference, and determine the difference as the sample material The target work function value of the surface.
  • determining a function according to the target amplitude, the target contact potential difference and the pre-stored target amplitude of the target induced alternating current includes:
  • the function is determined according to the pre-stored target amplitude of the target induced alternating current and the target amplitude A charge/ ⁇ and the target contact potential difference V CPD , determine the target charge density ⁇ on the surface of the sample material, where h is the predetermined surface topography of the sample material and the relationship between the probe and the sample material.
  • the preset height, ⁇ is the determined resonant frequency of the probe, A 0 is the determined amplitude of the probe, d is the determined dielectric thickness, ⁇ 0 is the determined vacuum permittivity, and ⁇ is the determined relative
  • the dielectric constant, S is the equivalent area of the probe tip.
  • the present invention provides a device for measuring electrical properties of a sample material, the device comprising:
  • control module for applying an alternating voltage on the piezoelectric ceramic to make the probe fixed on the piezoelectric ceramic vibrate on the surface of the sample material
  • a measurement module configured to measure the target contact potential difference between the probe and the sample material, and determine the target amplitude of the induced alternating current generated by the probe vibrating on the surface of the sample material;
  • a determination module configured to determine the target work function value of the sample material surface according to the target contact potential difference value and the determined work function value of the probe, according to the target amplitude, the target contact potential difference value and the predetermined
  • the stored target amplitude determination function of the induced alternating current determines a target charge density on the surface of the sample material.
  • the measurement module is specifically configured to measure the target induced alternating current whose frequency is the same as the resonant frequency of the probe; the amplitude of the target induced alternating current is taken as the target amplitude.
  • the determining module is specifically configured to determine the difference between the work function value of the probe and the target contact potential difference value according to the target contact potential difference value and the determined work function value of the probe, The difference is determined as the target work function value of the sample material surface.
  • the determining module is specifically configured to determine the function according to the pre-stored target amplitude of the target induced alternating current and the target amplitude A charge/ ⁇ and the target contact potential difference V CPD , determine the target charge density ⁇ on the surface of the sample material, where h is the predetermined surface topography of the sample material and the relationship between the probe and the sample material.
  • the preset height, ⁇ is the determined resonant frequency of the probe, A 0 is the determined amplitude of the probe, d is the determined dielectric thickness, ⁇ 0 is the determined vacuum permittivity, and ⁇ is the determined relative
  • the dielectric constant, S is the equivalent area of the probe tip.
  • the present invention provides an electronic device, which includes a processor and a memory, the memory is used for storing program instructions, and the processor is used for implementing the electrical properties of the above-mentioned sample material when executing the computer program stored in the memory The steps of any one of the performance measurement methods.
  • the present invention provides a computer-readable storage medium, which stores a computer program, and when the computer program is executed by a processor, implements the steps of any one of the above methods for measuring electrical properties of a sample material.
  • the invention provides a method, device, equipment and medium for measuring electrical properties of a sample material.
  • an alternating voltage is applied to the piezoelectric ceramic, so that the probe fixed on the piezoelectric ceramic vibrates on the surface of the sample material;
  • the capacitance between the probe and the sample material will change, and the charge on the surface of the sample material will induce an induced alternating current between the probe and the sample material.
  • the measured The target contact potential difference between the probe and the sample material and the pre-stored target amplitude of the induced alternating current determine the function, so as to determine the target charge density on the surface of the sample material, according to the target contact potential difference and the determined work function value of the probe , determine the target work function value on the surface of the sample material, because it is not necessary to apply an AC bias voltage and a DC voltage between the probe and the sample material, and the target charge density is determined according to the determined target amplitude determination function of the induced AC current, thereby improving the Determine the accuracy of the target work function value and target charge density on the surface of the sample material.
  • FIG. 1 is a schematic process diagram of a method for measuring electrical properties of a sample material according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a microscope provided in an embodiment of the present invention.
  • FIG. 3 is a capacitance model of a probe and a sample material provided by an embodiment of the present invention
  • FIG. 4 is another capacitance model of the probe and the sample material provided by the embodiment of the present invention.
  • FIG. 5 is a schematic diagram of the charge density on the surface of a material measured by a microscope according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the charge density on the surface of a material measured by a microscope according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of the charge density on the surface of a material measured by a microscope according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of the charge density on the surface of a material measured by a microscope according to an embodiment of the present invention.
  • FIG. 9 is a schematic diagram of the charge density on the surface of a material measured by a microscope according to an embodiment of the present invention.
  • FIG. 10 is a schematic structural diagram of a device for measuring electrical properties of a sample material according to an embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
  • embodiments of the present invention provide a method, device, equipment and medium for measuring the electrical properties of the sample material.
  • FIG. 1 is a schematic process diagram of a method for measuring electrical properties of a sample material provided in an embodiment of the present invention, and the process includes the following steps:
  • the method for measuring the electrical properties of a sample material provided by the embodiment of the present invention can be applied to electronic equipment, and the electronic equipment can be the microscope itself or the control equipment of the microscope.
  • the electronic device applies an alternating voltage to the piezoelectric ceramic. Due to the inverse piezoelectric effect of the piezoelectric ceramic itself, after the piezoelectric ceramic is subjected to the alternating voltage, The piezoelectric ceramic will deform, and since the probe is fixed on the piezoelectric ceramic, the deformation of the piezoelectric ceramic itself will also cause the probe to vibrate on the surface of the sample material.
  • the length of the piezoelectric ceramics in the microscope is generally between 1 and 8 mm, the width is generally between 1 and 4 mm, and the thickness is generally between 1 and 3 mm.
  • the probe is a commercial conductive probe.
  • the tip radius is between tens of nanometers and several micrometers, and the probe may be a metal-coated thin-film probe, a conductive diamond-coated probe, or an all-metal probe, which is not limited in this embodiment of the present invention.
  • the electronic device controls the probe to vibrate at a set height h of the surface topography of the sample material according to the determined surface topography of the sample material; wherein, the set height h is generally 0 to 1 micron, and the control probe
  • the method for setting the height h of the surface topography of the sample material belongs to the prior art, which is not repeated in the embodiment of the present invention.
  • the method for determining the surface topography of the sample material may be an existing method for determining a contact mode (contact mode) or an existing method for determining a peak force tapping mode (peakforce tapping mode). I won't go into details.
  • S102 Measure the target contact potential difference between the probe and the sample material, and determine the target amplitude of the induced alternating current generated by the probe vibrating on the surface of the sample material.
  • the capacitance between the probe and the sample material changes, and the charge on the surface of the sample material induces an induced alternating current between the probe and the sample material.
  • the electronic device measures the difference between the probe and the sample material. Due to the target contact potential difference of the induced alternating current, the target amplitude of the induced alternating current is determined.
  • the microscope when the electronic device is a microscope, the microscope includes a current measurement module and a lock-in amplifier.
  • the current measurement module of the microscope measures the induced alternating current
  • the lock-in amplifier of the microscope determines the target contact potential difference according to the input induced alternating current. value and the target amplitude of the induced AC current.
  • the electronic device When the electronic device is the control device of the microscope, the electronic device controls the induced alternating current measured by the current measurement module of the microscope, and controls the lock-in amplifier of the microscope to determine the target contact potential difference and the target amplitude of the induced alternating current according to the input induced alternating current.
  • S103 Determine the target work function value of the surface of the sample material according to the target contact potential difference value and the determined work function value of the probe, and determine the target work function value of the sample material surface according to the target amplitude, the target contact potential difference value and the pre-stored
  • the target amplitude determination function of the induced alternating current is used to determine the target charge density on the surface of the sample material.
  • the target work function value on the surface of the sample material can be determined according to the target contact potential difference and the determined work function value of the probe.
  • the work function value refers to the minimum energy value required to move an electron from the inside of the solid state to the surface of the solid state, wherein, according to the target contact potential difference between the probe and the sample material and the work function value of the probe , the method for determining the target work function value on the surface of the sample material belongs to the prior art, which is not repeated in the embodiment of the present invention.
  • the target amplitude determination function of the probe and the surface of the sample material is also stored in advance. , and substituting the determined difference between the target amplitude and the target contact potential into the target amplitude determination function relationship to determine the target charge density on the surface of the sample material.
  • the probe fixed on the piezoelectric ceramic vibrates on the surface of the sample material; when the probe vibrates on the surface of the sample material, the contact between the probe and the sample material When the capacitance changes, the charge on the surface of the sample will induce an induced alternating current between the probe and the sample material.
  • the target amplitude determines the function to determine the target charge density on the surface of the sample material. According to the target contact potential difference and the determined work function value of the probe, the target work function value on the surface of the sample material is determined.
  • the AC bias voltage and the DC voltage are applied between, and the target charge density is determined according to the determined target amplitude determination function of the induced AC current, thereby improving the accuracy of the determined target work function value and target charge density on the surface of the sample material.
  • the determination of the induced alternating current generated by the vibration of the probe on the surface of the sample material is performed.
  • the target amplitudes include:
  • the amplitude of the target induced alternating current is taken as the target amplitude.
  • the electronic device measures the induced alternating current of each frequency generated by the probe and the surface of the sample material, and according to each frequency of the induced alternating current A frequency is determined, and the target-induced alternating current whose frequency is the same as the resonant frequency of the probe is determined, and the amplitude of the target-induced alternating current is taken as the target amplitude.
  • FIG. 2 is a schematic diagram of a microscope according to an embodiment of the present invention.
  • the microscope includes a high-frequency signal generator, a current measurement module, and a lock-in amplifier 2 .
  • the high-frequency signal generator outputs an alternating voltage with a frequency of ⁇ and applies it to the piezoelectric ceramic, wherein the frequency ⁇ of the alternating voltage is the same as the resonant frequency of the probe, so that the probe fixed on the piezoelectric ceramic is in the sample material.
  • the surface vibrates, creating an induced alternating current between the probe and the surface of the sample material.
  • the scanning position of the probe on the sample material will change due to the vibration, that is, the position of the probe tip perpendicular to the sample material will change, and the size of the position change is generally within 200 microns.
  • the frequency range of the alternating voltage that can be generated by the signal generator is between several kilohertz and several megahertz, and the resonant frequency of the probe is generally between tens of thousands of hertz and hundreds of thousands of hertz; the current measurement resolution of the current measurement module
  • the rate is Femto-Ampere level.
  • the current measurement module of the microscope measures the target induced alternating current with the same frequency as the resonant frequency of the probe, and inputs the target induced alternating current into the lock-in amplifier 2 to determine the amplitude of the target induced alternating current .
  • the control device controls the current measurement module of the microscope to measure the target induced alternating current with the same frequency as the resonant frequency of the probe, and input the target induced alternating current into the lock-in amplifier 2, thereby Determine the amplitude of the target induced alternating current.
  • the microscope in FIG. 2 further includes a lock-in amplifier 1 and a feedback controller.
  • the lock-in amplifier 1 and the feedback controller are used to determine the surface topography of the sample material.
  • the surface topography of the sample material is determined.
  • the method is an existing tapping mode determination method.
  • the high-frequency signal generator of the microscope outputs an alternating voltage with a frequency of ⁇ and applies it to the piezoelectric ceramic, so that the probe fixed on the piezoelectric ceramic vibrates on the surface of the sample material, and the vibration signal generated by the vibration is converted to the alternating voltage.
  • the frequency ⁇ of the variable voltage is input to the lock-in amplifier 1, and the lock-in amplifier 1 determines the amplitude of the probe and sends it to the feedback controller.
  • the feedback controller adjusts the height of the platform where the sample material is located according to the amplitude, so that the distance between the probe and the sample material is As a preset fixed value, the surface topography of the sample material can be determined according to the change of the Z axis of the platform.
  • the target contact potential difference value and the determined work function value of the probe are determined to determine the target work function value.
  • the target work function values on the surface of the sample material include:
  • the target contact potential difference and the determined work function value of the probe determine the difference between the probe's work function value and the target contact potential difference, and determine the difference as the sample material The target work function value of the surface.
  • the electronic device stores the work function value of the probe in advance, wherein the work function value of the probe is determined. If the probe is made of pure gold, then The work function value of the pure gold probe is 5.1. If the probe is made of pure platinum, the work function value of the pure platinum probe is 5.65.
  • the target contact potential difference due to the induced alternating current between the probe and the surface of the sample material is equal to the difference between the work function value of the probe and the target work function value of the sample material Therefore, according to the target contact potential difference and the determined work function value of the probe, the difference between the probe's work function value and the target contact potential difference is determined, and the difference between the probe's work function value and the target contact potential difference is determined. is the target work function value on the surface of the sample material.
  • the target amplitude determination function to determine the target charge density on the surface of the sample material includes:
  • the function is determined according to the pre-stored target amplitude of the target induced alternating current and the target amplitude A charge/ ⁇ and the target contact potential difference V CPD , determine the target charge density ⁇ on the surface of the sample material, where h is the predetermined surface topography of the sample material and the relationship between the probe and the sample material.
  • the preset height, ⁇ is the determined resonant frequency of the probe, A 0 is the determined amplitude of the probe, d is the determined dielectric thickness, ⁇ 0 is the determined vacuum permittivity, and ⁇ is the determined relative
  • the dielectric constant, S is the equivalent area of the probe tip.
  • the electronic device pre-stores the target amplitude determination function of the target induced alternating current generated by the probe and the surface of the sample material, and the target amplitude determination function is: Among them, the A charge/ ⁇ is the target amplitude of the target induced alternating current, V CPD is the target contact potential difference of the target induced alternating current, ⁇ is the target charge density on the surface of the sample material, and h is the predetermined surface morphology and probe of the sample material.
  • the preset height of the needle and the sample material ⁇ is the determined resonance frequency of the probe, A0 is the determined amplitude of the probe, d is the determined dielectric thickness, ⁇ 0 is the determined vacuum dielectric constant, ⁇ is the determined relative permittivity, and S is the equivalent area of the probe tip.
  • the target amplitude and the target contact potential difference are substituted into the above target amplitude determination function to determine the target on the surface of the sample material. charge density.
  • Fig. 3 is a capacitance model between a probe and a sample material provided by an embodiment of the present invention.
  • the probe is simplified on the sample surface with the height of the probe being h, the vibration frequency being ⁇ , and the vibration amplitude being A 0 . harmonic vibration.
  • FIG. 4 is another capacitance model between the probe and the sample material provided by the embodiment of the present invention.
  • the thickness of the dielectric on the surface of the sample material is d
  • the surface area of the probe is S
  • the charge density on the surface of the sample material is assumed is - ⁇
  • the charge density on the probe surface is S ⁇ -Q.
  • the surface charge density of the base electrode of the sample material can be obtained as Q.
  • the target contact potential difference of the target induced alternating current between the probe and the surface of the sample material is where ⁇ 0 is the determined vacuum permittivity, and ⁇ is the determined relative permittivity.
  • Equation 1 can be obtained: Taking the derivative of Equation 1, we get Equation 2: where j(t) is the current density of the induced alternating current generated between the probe and the base electrode of the sample material, and by performing Fourier transform on Equation 2, it can be determined that the frequency between the probe and the sample material is the frequency of the probe. The current density of the target induced alternating current at the resonant frequency ⁇ Therefore, the target amplitude A charge/ ⁇ of the target-induced alternating current generated between the probe and the sample material can be determined,
  • FIG. 5 is a schematic diagram of the charge density on the surface of a material measured by a microscope provided in an embodiment of the present invention. Charges are injected on the surface of the sample material by applying a -10V bias voltage between the probe and the sample material in advance, and then using this method The method of the embodiment of the invention is used to measure the charge density on the surface of the sample material.
  • the color depth in Figure 5 represents the size of the charge density, and the darker the color, the greater the charge density.
  • FIG. 6 is a schematic diagram of the charge density on the surface of a material measured by a microscope according to an embodiment of the present invention. Charges are injected on the surface of the sample material by applying a -8V bias voltage between the probe and the sample material in advance, and then using this method The method of the embodiment of the invention is used to measure the charge density on the surface of the sample material.
  • the color depth in Figure 6 represents the size of the charge density, and the darker the color, the greater the charge density.
  • FIG. 7 is a schematic diagram of the charge density on the surface of the material obtained by a microscope provided in an embodiment of the present invention. Charges are injected on the surface of the sample material by applying a -6V bias voltage between the probe and the sample material in advance, and then using The method of the embodiment of the present invention is used to measure the charge density on the surface of the sample material.
  • the color depth in FIG. 7 represents the size of the charge density, and the darker the color, the greater the charge density.
  • FIG. 8 is a schematic diagram of the charge density on the surface of a material measured by a microscope provided in an embodiment of the present invention. Charges are injected on the surface of the sample material by applying a -4V bias voltage between the probe and the sample material in advance, and then using this method The method of the embodiment of the invention is used to measure the charge density on the surface of the sample material.
  • the color depth in Figure 8 represents the size of the charge density, and the darker the color, the greater the charge density.
  • FIG. 9 is a schematic diagram of the charge density on the surface of a material measured by a microscope provided in an embodiment of the present invention. Charges are injected on the surface of the sample material by applying a -2V bias voltage between the probe and the sample material in advance, and then using this method The method of the embodiment of the invention is used to measure the charge density on the surface of the sample material.
  • the color depth in FIG. 9 represents the size of the charge density, and the darker the color, the greater the charge density.
  • FIG. 10 is a schematic structural diagram of a device for measuring electrical properties of a sample material according to an embodiment of the present invention, and the device includes:
  • control module 1001 for applying an alternating voltage on the piezoelectric ceramic, so that the probe fixed on the piezoelectric ceramic vibrates on the surface of the sample material;
  • a measurement module 1002 configured to measure the target contact potential difference between the probe and the sample material, and determine the target amplitude of the induced alternating current generated by the probe vibrating on the surface of the sample material;
  • a determination module 1003 configured to determine the target work function value of the sample material surface according to the target contact potential difference value and the determined work function value of the probe, according to the target amplitude, the target contact potential difference value and The pre-stored target amplitude determination function of the induced alternating current determines the target charge density on the surface of the sample material.
  • the measurement module is specifically configured to measure the target induced alternating current whose frequency is the same as the resonant frequency of the probe; the amplitude of the target induced alternating current is taken as the target amplitude.
  • the determining module is specifically configured to determine the difference between the work function value of the probe and the target contact potential difference value according to the target contact potential difference value and the determined work function value of the probe, The difference is determined as the target work function value of the sample material surface.
  • the determining module is specifically configured to determine the function according to the pre-stored target amplitude of the target induced alternating current and the target amplitude A charge/ ⁇ and the target contact potential difference V CPD , determine the target charge density ⁇ on the surface of the sample material, where h is the predetermined surface topography of the sample material and the relationship between the probe and the sample material.
  • the preset height, ⁇ is the determined resonant frequency of the probe, A 0 is the determined amplitude of the probe, d is the determined dielectric thickness, ⁇ 0 is the determined vacuum permittivity, and ⁇ is the determined relative
  • the dielectric constant, S is the equivalent area of the probe tip.
  • FIG. 11 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
  • an electronic device is also provided in the embodiment of the present invention, including a processor 1101, a communication interface 1102, a memory 1103 and A communication bus 1104, wherein the processor 1101, the communication interface 1102, and the memory 1103 communicate with each other through the communication bus 1104;
  • a computer program is stored in the memory 1103, and when the program is executed by the processor 1101, the processor 1101 is caused to perform the following steps:
  • the target work function value of the sample material surface is determined, and according to the target amplitude, the target contact potential difference value and the pre-stored induction
  • the target amplitude of the alternating current determines a function to determine the target charge density on the surface of the sample material.
  • the processor 1101 specifically configured to determine the target amplitude of the induced alternating current generated by the probe vibrating on the surface of the sample material, includes:
  • the amplitude of the target induced alternating current is taken as the target amplitude.
  • the processor 1101 is specifically configured to determine the target work function value of the sample material surface according to the target contact potential difference value and the determined work function value of the probe, including:
  • the target contact potential difference and the determined work function value of the probe determine the difference between the probe's work function value and the target contact potential difference, and determine the difference as the sample material The target work function value of the surface.
  • the processor 1101 is specifically configured to determine the target charge density on the surface of the sample material according to the target amplitude, the target contact potential difference, and the target amplitude determination function of the target induced alternating current stored in advance. include:
  • the function is determined according to the pre-stored target amplitude of the target induced alternating current and the target amplitude A charge/ ⁇ and the target contact potential difference V CPD , determine the target charge density ⁇ on the surface of the sample material, where h is the predetermined surface topography of the sample material and the relationship between the probe and the sample material.
  • the preset height, ⁇ is the determined resonant frequency of the probe, A 0 is the determined amplitude of the probe, d is the determined dielectric thickness, ⁇ 0 is the determined vacuum permittivity, and ⁇ is the determined relative
  • the dielectric constant, S is the equivalent area of the probe tip.
  • the communication bus mentioned in the above electronic device may be a peripheral component interconnect standard (Peripheral Component Interconnect, PCI) bus or an Extended Industry Standard Architecture (Extended Industry Standard Architecture, EISA) bus or the like.
  • PCI peripheral component interconnect standard
  • EISA Extended Industry Standard Architecture
  • the communication bus can be divided into address bus, data bus, control bus and so on. For ease of presentation, only one thick line is used in the figure, but it does not mean that there is only one bus or one type of bus.
  • the communication interface 1102 is used for communication between the above-mentioned electronic device and other devices.
  • the memory may include random access memory (Random Access Memory, RAM), and may also include non-volatile memory (Non-Volatile Memory, NVM), such as at least one disk storage.
  • RAM Random Access Memory
  • NVM non-Volatile Memory
  • the memory may also be at least one storage device located remotely from the aforementioned processor.
  • the above-mentioned processor can be a general-purpose processor, including a central processing unit, a network processor (NP), etc.; it can also be a digital instruction processor (Digital Signal Processing, DSP), an application-specific integrated circuit, a field programmable gate array, or Other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.
  • DSP Digital Signal Processing
  • an embodiment of the present invention further provides a computer-readable storage medium, which stores a computer program, and the computer program is executed by a processor as follows:
  • the target work function value of the sample material surface is determined, and according to the target amplitude, the target contact potential difference value and the pre-stored induction
  • the target amplitude of the alternating current determines a function to determine the target charge density on the surface of the sample material.
  • the determining the target amplitude of the induced alternating current generated by the vibration of the probe on the surface of the sample material includes:
  • the amplitude of the target induced alternating current is taken as the target amplitude.
  • determining the target work function value on the surface of the sample material according to the target contact potential difference value and the determined work function value of the probe includes:
  • the target contact potential difference and the determined work function value of the probe determine the difference between the probe's work function value and the target contact potential difference, and determine the difference as the sample material The target work function value of the surface.
  • determining a function according to the target amplitude, the target contact potential difference and the pre-stored target amplitude of the target induced alternating current includes:
  • the function is determined according to the pre-stored target amplitude of the target induced alternating current and the target amplitude A charge/ ⁇ and the target contact potential difference V CPD , determine the target charge density ⁇ on the surface of the sample material, where h is the predetermined surface topography of the sample material and the relationship between the probe and the sample material.
  • the preset height, ⁇ is the determined resonant frequency of the probe, A 0 is the determined amplitude of the probe, d is the determined dielectric thickness, ⁇ 0 is the determined vacuum permittivity, and ⁇ is the determined relative
  • the dielectric constant, S is the equivalent area of the probe tip.
  • the embodiments of the present application may be provided as a method, a system, or a computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.
  • computer-usable storage media including, but not limited to, disk storage, CD-ROM, optical storage, etc.
  • These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory result in an article of manufacture comprising instruction means, the instructions
  • the apparatus implements the functions specified in the flow or flows of the flowcharts and/or the block or blocks of the block diagrams.

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Abstract

一种样品材料的电学性能测量方法、装置、设备和介质，该方法中在压电陶瓷上施加交变电压，使固定在压电陶瓷上的探针在样品材料表面振动(S101)；测量探针与样品材料之间的目标接触电势差值，并确定探针在样品材料表面振动产生的感应交流电的目标振幅(S102)；根据目标接触电势差值和确定的探针的功函数值，确定样品材料表面的目标功函数值，根据目标振幅、目标接触电势差值和预先保存的感应交流电的目标振幅确定函数，确定样品材料表面的目标电荷密度(S103)。由于不需要在探针与样品材料之间施加交流偏压和直流电压，并且根据确定的感应交流电的目标振幅确定函数确定目标电荷密度，从而提高了确定的样品材料表面的目标功函数值和目标电荷密度的准确性。

Description

一种样品材料的电学性能测量方法、装置、设备和介质 技术领域
本发明涉及显微镜测量领域，尤其涉及一种样品材料的电学性能测量方法、装置、设备和介质。
背景技术
为了测量材料表面微观电学性质，现有技术中存在一种原子力显微镜(atomic force microscopy，AFM)；该原子力显微镜是一种常用的微观表征设备，其最初主要是用于测量样品材料表面微观形貌，在原子力显微镜的基础上，又增加了测量样品材料表面微观电学性能测量的功能，电学性能包括材料表面电荷密度，材料表面功函数等。
现有技术中还存在可以测量材料表面电学性能的开尔文探针力显微镜(Kelvin probe force microscopy，KPFM)、静电力显微镜(electrostatic force microscopy，EFM)以及导电原子力显微镜(conductive force microscopy，CAFM)。
其中，KPFM首先通过施加交流偏压诱导的交变静电力驱动探针振动，之后在探针与样品材料之间施加直流电压，在直流电压使探针振动的一阶振动频率的振幅为0时，该直流电压的大小与样品材料与探针之间的接触电势差的大小相等，从而根据该接触电势差、以及接触电势差与电荷密度间的函数关系，确定出样品材料的表面电荷密度，并且根据探针的功函数与该接触电势差的差值，确定出样品材料表面功函数。但是由于施加在探针与样品材料之间的交流偏压和直流电压会影响样品材料的电学性能，从而导致测量结果不准确。
现有技术中EFM首先通过在压电陶瓷施加交变电压使其振动从而带动固定在压电陶瓷上的探针振动，探针受到样品材料的静电力后，其振动振幅和相位将发生变化，根据探针在样品材料表面不同位置时该振动振幅和相位的变化可以定性判断出材料表面的电荷密度的变 化。但是由于该振动振幅和相位的变化与该静电力的值没有准确的对应关系，因此该EFM无法准确地确定出该静电力的大小以及样品材料表面电荷密度，并且该EFM也无法确定出样品材料表面功函数。
此外，现有技术中的CAFM主要用于测量材料微区的导电性，不能获得样品材料的表面电荷、功函数等表面微观电学性能。
发明内容
本发明提供了一种样品材料的电学性能测量方法、装置、设备和介质，用以解决现有技术中的无法准确地确定样品材料的电学性能的问题。
本发明提供了一种样品材料的电学性能测量方法，所述方法包括：
在压电陶瓷上施加交变电压，使固定在所述压电陶瓷上的探针在样品材料表面振动；
测量所述探针与所述样品材料之间的目标接触电势差值，并确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅；
根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值，根据所述目标振幅、所述目标接触电势差值和预先保存的所述感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度。
进一步地，所述确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅包括：
测量频率与所述探针的共振频率相同的目标感应交流电；
将所述目标感应交流电的振幅作为目标振幅。
进一步地，所述根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值包括：
根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述探针的功函数值与所述目标接触电势差值的差值，将所述差值确定为所述样品材料表面的目标功函数值。
进一步地，所述根据所述目标振幅、所述目标接触电势差值和预先保存的所述目标感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度包括：
根据预先保存的所述目标感应交流电的目标振幅确定函数
Figure PCTCN2021133106-appb-000001
以及所述目标振幅A charge/ω和所述目标接触电势差值V CPD，确定所述样品材料表面的目标电荷密度σ，其中h为预先确定的样品材料的表面形貌和探针与样品材料的预设高度、ω为确定的所述探针的共振频率、A 0为确定的所述探针的振幅、d为确定的电介质厚度、ε 0为确定的真空介电常数、ε为确定的相对介电常数、S为探针针尖的等效面积。
相应地，本发明提供了一种样品材料的电学性能测量装置，所述装置包括：
控制模块，用于在压电陶瓷上施加交变电压，使固定在所述压电陶瓷上的探针在样品材料表面振动；
测量模块，用于测量所述探针与所述样品材料之间的目标接触电势差值，并确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅；
确定模块，用于根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值，根据所述目标振幅、所述目标接触电势差值和预先保存的所述感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度。
进一步地，所述测量模块，具体用于测量频率与所述探针的共振频率相同的目标感应交流电；将所述目标感应交流电的振幅作为目标振幅。
进一步地，所述确定模块，具体用于根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述探针的功函数值与所述目标接触电势差值的差值，将所述差值确定为所述样品材料表面的目标功函数值。
进一步地，所述确定模块，具体用于根据预先保存的所述目标感 应交流电的目标振幅确定函数
Figure PCTCN2021133106-appb-000002
以及所述目标振幅A charge/ω和所述目标接触电势差值V CPD，确定所述样品材料表面的目标电荷密度σ，其中h为预先确定的样品材料的表面形貌和探针与样品材料的预设高度、ω为确定的所述探针的共振频率、A 0为确定的所述探针的振幅、d为确定的电介质厚度、ε 0为确定的真空介电常数、ε为确定的相对介电常数、S为探针针尖的等效面积。
相应地，本发明提供了一种电子设备，所述电子设备包括处理器和存储器，所述存储器用于存储程序指令，所述处理器用于执行存储器中存储的计算机程序时实现上述样品材料的电学性能测量方法中任一所述方法的步骤。
相应地，本发明提供了一种计算机可读存储介质，其存储有计算机程序，所述计算机程序被处理器执行时实现上述样品材料的电学性能测量方法中任一所述方法的步骤。
本发明提供了一种样品材料的电学性能测量方法、装置、设备和介质，由于该方法中在压电陶瓷上施加交变电压，使固定在压电陶瓷上的探针在样品材料表面振动；当探针在样品材料表面振动时，探针与样品材料之间的电容会发生变化，样品材料表面的电荷会诱导探针与样品材料之间产生感应交流电，根据感应交流电的目标振幅、测量得到的探针与样品材料之间的目标接触电势差值和预先保存的感应交流电的目标振幅确定函数，从而确定出样品材料表面的目标电荷密度，根据目标接触电势差值和确定的探针的功函数值，确定样品材料表面的目标功函数值，由于不需要在探针与样品材料之间施加交流偏压和直流电压，并且是根据确定的感应交流电的目标振幅确定函数确定目标电荷密度，从而提高了确定的样品材料表面的目标功函数值和目标电荷密度的准确性。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种样品材料的电学性能测量方法的过程示意图；
图2为本发明实施例提供的一种显微镜的示意图；
图3为本发明实施例提供的一种探针与样品材料的电容模型；
图4为本发明实施例提供的另一种探针与样品材料的电容模型；
图5为本发明实施例提供的一种显微镜测得的材料表面的电荷密度的示意图；
图6为本发明实施例提供的一种显微镜测得的材料表面的电荷密度的示意图；
图7为本发明实施例提供的一种显微镜测得的材料表面的电荷密度的示意图；
图8为本发明实施例提供的一种显微镜测得的材料表面的电荷密度的示意图；
图9为本发明实施例提供的一种显微镜测得的材料表面的电荷密度的示意图；
图10为本发明实施例提供的一种样品材料的电学性能测量装置的结构示意图；
图11为本发明实施例提供的一种电子设备结构示意图。
具体实施方式
为了使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普 通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
为了提高确定的样品材料的电学性能的准确性，本发明实施例提供了一种样品材料的电学性能测量方法、装置、设备和介质。
实施例1：
图1为本发明实施例提供的一种样品材料的电学性能测量方法的过程示意图，该过程包括以下步骤：
S101：在压电陶瓷上施加交变电压，使固定在所述压电陶瓷上的探针在样品材料表面振动。
本发明实施例提供的一种样品材料的电学性能测量方法可以应用于电子设备，该电子设备可以是显微镜本身，也可以是显微镜的控制设备。
为了测量样片材料表面的电学性能，在本发明实施例中，该电子设备在压电陶瓷上施加交变电压，由于压电陶瓷本身的逆压电效应，压电陶瓷在受到交变电压后，压电陶瓷会发生形变，并且由于探针固定在压电陶瓷之上，因此压电陶瓷本身的形变也会带动该探针在样品材料表面振动。
其中，显微镜中的压电陶瓷的长一般在1到8毫米之间，宽一般在1到4毫米之间，厚一般在1到3毫米之间，探针是商用导电探针，探针的针尖半径在几十纳米到几个微米之间，探针可以是镀金属薄膜探针，也可以是镀导电金刚石探针，还可以是全金属探针，本发明实施例对此不做限制。
具体的，该电子设备根据确定的样品材料的表面形貌，控制探针在样品材料表面形貌的设定高度h处振动；其中，该设定高度h一般为0到1微米，控制探针在样品材料表面形貌的设定高度h处的方法属于现有技术，本发明实施例对此不做赘述。
其中，确定样品材料的表面形貌的方法可以是现有的接触模式(contact mode)确定方法，也可以是现有的峰值力轻敲模式(peakforce tapping mode)确定方法，本发明实施例对此不做赘述。
S102：测量所述探针与所述样品材料之间的目标接触电势差值，并确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅。
探针在样品材料表面振动时，探针与样品材料之间的电容发生变化，样品材料表面的电荷会诱导探针与样品材料之间产生感应交流电，该电子设备测量探针与样品材料之间由于感应交流电的目标接触电势差值，并确定出该感应交流电的目标振幅。
具体的，该电子设备为显微镜时，该显微镜内部包括电流测量模块和锁相放大器，该显微镜的电流测量模块测量得到的感应交流电，该显微镜的锁相放大器根据输入的感应交流电确定出目标接触电势差值以及感应交流电的目标振幅。
该电子设备为显微镜的控制设备时，该电子设备控制显微镜的电流测量模块测量得到的感应交流电，控制显微镜的锁相放大器根据输入的感应交流电确定出目标接触电势差值以及感应交流电的目标振幅。
S103：根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值，根据所述目标振幅、所述目标接触电势差值和预先保存的所述感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度。
确定出该探针与样品材料之间的目标接触电势差值后，根据该目标接触电势差值和确定的探针的功函数值，可以确定出样片材料表面的目标功函数值。其中功函数值是指把一个电子从固态内部刚好移到该固态表面所需的最少的能量值，其中，根据该探针与样品材料之间的目标接触电势差值和该探针的功函数值，确定该样品材料表面的目标功函数值的方法属于现有技术，本发明实施例对此不做赘述。
确定出该探针与样品材料之间的感应电流的目标振幅和目标接触电势差值后，为了确定该样品材料表面的目标电荷密度，还预先保存有该探针与样品材料表面的目标振幅确定函数，将确定出的该目标振幅和目标接触电势差值代入该目标振幅确定函数关系中，可以确定出该样品材料表面的目标电荷密度。
由于本发明实施例中在压电陶瓷上施加交变电压，使固定在压电陶 瓷上的探针在样品材料表面振动；当探针在样品材料表面振动时，探针与样品材料之间的电容发生变化，样品表面的电荷会诱导探针与样品材料之间产生感应交流电，根据感应交流电的目标振幅、测量得到的探针与样品材料之间的目标接触电势差值和预先保存的感应交流电的目标振幅确定函数，从而确定出样品材料表面的目标电荷密度，根据目标接触电势差值和确定的探针的功函数值，确定样品材料表面的目标功函数值，由于不需要在探针与样品材料之间施加交流偏压和直流电压，并且是根据确定的感应交流电的目标振幅确定函数确定目标电荷密度，从而提高了确定的样品材料表面的目标功函数值和目标电荷密度的准确性。
实施例2：
为了确定探针在样品材料表面振动产生的感应交流电的目标振幅，在上述实施例的基础上，在本发明实施例中，所述确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅包括：
测量频率与所述探针的共振频率相同的目标感应交流电；
将所述目标感应交流电的振幅作为目标振幅。
为了确定探针在样品材料表面振动产生的感应交流电的目标振幅，在本发明实施例中，该电子设备测量得到该探针与样品材料表面产生的每种频率的感应交流电，根据感应交流电的每种频率，确定出频率与探针的共振频率相同的目标感应交流电，并将该目标感应交流电的振幅作为目标振幅。
图2为本发明实施例提供的一种显微镜的示意图，如图2所示，该显微镜包括高频信号发生器、电流测量模块和锁相放大器2。该高频信号发生器输出频率为ω的交变电压并施加在压电陶瓷上，其中交变电压的频率ω与探针的共振频率相同，使固定在压电陶瓷上的探针在样品材料表面振动，从而在探针与样品材料表面之间产生感应交流电。
其中，探针在样品材料表面振动时，由于振动会导致探针在样品材料的扫描位置变化，即探针的针尖垂直到样品材料的位置会发生变化，位置变化的大小一般在200微米以内。
信号发生器可以产生的交变电压的频率范围在几千赫兹到几兆赫 兹之间，该探针的共振频率一般在几万赫兹到几十万赫兹之间；该电流测量模块的电流测量分辨率为飞安量级。
若该电子设备为该显微镜时，该显微镜的电流测量模块测量得到频率与探针的共振频率相同的目标感应交流电，并将目标感应交流电输入到锁相放大器2中，确定出目标感应交流电的振幅。
若该电子设备为该显微镜的控制设备，该控制设备控制该显微镜的电流测量模块测量得到频率与探针的共振频率相同的目标感应交流电，并将目标感应交流电输入到锁相放大器2中，从而确定出目标感应交流电的振幅。
图2中的显微镜还包括有锁相放大器1和反馈控制器，该锁相放大器1和反馈控制器用于确定样品材料的表面形貌，在本发明实施例中，确定样品材料的表面形貌的方法是现有的轻敲模式(tapping mode)确定方法。
具体的，显微镜的高频信号发生器输出频率为ω的交变电压并施加在压电陶瓷上，使固定在压电陶瓷上的探针在样品材料表面振动，将振动产生的振动信号和交变电压的频率ω输入锁相放大器1，锁相放大器1确定出探针的振幅并发送给反馈控制器，反馈控制器根据振幅调节样品材料所在平台的高低，使探针与样品材料的距离值为预设的固定值，根据平台的Z轴的变化，可以确定出样品材料的表面形貌。
实施例3：
为了确定样品材料表面的目标功函数值，在上述各实施例的基础上，在本发明实施例中，所述根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值包括：
根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述探针的功函数值与所述目标接触电势差值的差值，将所述差值确定为所述样品材料表面的目标功函数值。
为了确定样品材料表面的目标功函数值，在本发明实施例中，电子设备预先保存有探针的功函数值，其中探针的功函数值是确定的，若探针为纯金材质，则纯金探针的功函数值是5.1，若探针是纯铂材质，则 纯铂探针的功函数值是5.65。
根据该目标接触电势差值和确定的探针的功函数值，由于探针与样品材料表面之间的感应交流电的目标接触电势差值等于探针的功函数值与样品材料的目标功函数值的差值，因此根据目标接触电势差值和确定的探针的功函数值，确定探针的功函数值与目标接触电势差值的差值，将探针的功函数值与目标接触电势差值的差值确定为样品材料表面的目标功函数值。
实施例4：
为了确定样品材料表面的目标电荷密度，在上述各实施例的基础上，在本发明实施例中，所述根据所述目标振幅、所述目标接触电势差值和预先保存的所述目标感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度包括：
根据预先保存的所述目标感应交流电的目标振幅确定函数
Figure PCTCN2021133106-appb-000003
以及所述目标振幅A charge/ω和所述目标接触电势差值V CPD，确定所述样品材料表面的目标电荷密度σ，其中h为预先确定的样品材料的表面形貌和探针与样品材料的预设高度、ω为确定的所述探针的共振频率、A 0为确定的所述探针的振幅、d为确定的电介质厚度、ε 0为确定的真空介电常数、ε为确定的相对介电常数、S为探针针尖的等效面积。
为了确定样品材料表面的目标电荷密度，在本发明实施例中，电子设备预先保存有探针与样品材料表面产生的目标感应交流电的目标振幅确定函数，该目标振幅确定函数为：
Figure PCTCN2021133106-appb-000004
Figure PCTCN2021133106-appb-000005
其中，该A charge/ω为目标感应交流电的目标振幅，V CPD为目标感应交流电的目标接触电势差值，σ为样品材料表面的目标电荷密度，h为预先确定的样品材料的表面形貌和探针与样品材料的预设高度、ω为确定的所述探针的共振频率、A 0为确定的所述探针的振幅、d为确定的电介质厚度、ε 0为确定的真空介电常数、ε为确定的相对介电常数、S为探针针尖的等效面积。
电子设备确定出探针与样品材料表面的目标感应交流电的目标振 幅和目标接触电势差值后，将该目标振幅和目标接触电势差值代入上述目标振幅确定函数中，从而确定出该样品材料表面的目标电荷密度。
图3为本发明实施例提供的一种探针与样品材料的电容模型，如图3所示，探针以抬高高度为h，振动频率为ω，振动振幅为A 0在样品表面做简谐振动。将探针与样品看做一个电容，根据探针抬高高度、振动频率和探针振幅，由于探针在样品材料表面的振动是简谐振动，因此可得探针表面距离样品电介质表面距离为x(t)，其中x(t)＝h+A 0sin(ωt)。
图4为本发明实施例提供的另一种探针与样品材料的电容模型，如图4所示，样品材料表面的电介质厚度为d，探针的表面积为S，假设样品材料表面的电荷密度为-σ，探针表面的电荷密度为Sσ-Q，根据高斯定理，可得样品材料的基底电极的表面电荷密度为Q。
根据图4的电容模型，结合高斯定理，可以得到探针与样品材料表面之间的目标感应交流电的目标接触电势差值为
Figure PCTCN2021133106-appb-000006
Figure PCTCN2021133106-appb-000007
其中ε 0为确定的真空介电常数，ε为确定的相对介电常数。
根据上述目标接触电势差值的函数关系，可以得到等式1：
Figure PCTCN2021133106-appb-000008
对等式1求导，可得等式2：
Figure PCTCN2021133106-appb-000009
Figure PCTCN2021133106-appb-000010
其中j(t)为探针与样品材料的基底电极之间产生的感应交流电的电流密度，对等式2进行傅里叶变换，可以确定出探针与样品材料之间的频率为探针的共振频率ω的目标感应交流电的电流密度
Figure PCTCN2021133106-appb-000011
因此可以确定出探针与样品材料之间产生的目标感应交流电的目标振幅A charge/ω，
Figure PCTCN2021133106-appb-000012
图5为本发明实施例提供的一种显微镜测得的材料表面的电荷密度的示意图，通过预先在探针与样品材料之间施加-10V偏压的方法在样品材料表面注入电荷，之后采用本发明实施例的方法来测量样品材料表面 的电荷密度，图5中的颜色深度表示电荷密度的大小，颜色越深表示电荷密度越大。
图6为本发明实施例提供的一种显微镜测得的材料表面的电荷密度的示意图，通过预先在探针与样品材料之间施加-8V偏压的方法在样品材料表面注入电荷，之后采用本发明实施例的方法来测量样品材料表面的电荷密度，图6中的颜色深度表示电荷密度的大小，颜色越深表示电荷密度越大。
图7为本发明实施例提供的一种显微镜测，得的材料表面的电荷密度的示意图，通过预先在探针与样品材料之间施加-6V偏压的方法在样品材料表面注入电荷，之后采用本发明实施例的方法来测量样品材料表面的电荷密度，图7中的颜色深度表示电荷密度的大小，颜色越深表示电荷密度越大。
图8为本发明实施例提供的一种显微镜测得的材料表面的电荷密度的示意图，通过预先在探针与样品材料之间施加-4V偏压的方法在样品材料表面注入电荷，之后采用本发明实施例的方法来测量样品材料表面的电荷密度，图8中的颜色深度表示电荷密度的大小，颜色越深表示电荷密度越大。
图9为本发明实施例提供的一种显微镜测得的材料表面的电荷密度的示意图，通过预先在探针与样品材料之间施加-2V偏压的方法在样品材料表面注入电荷，之后采用本发明实施例的方法来测量样品材料表面的电荷密度，图9中的颜色深度表示电荷密度的大小，颜色越深表示电荷密度越大。
根据上述的图5、图6、图7、图8和图9，可以确定出在探针与样品材料之间施加的偏压越大，则图中的颜色深度越深，说明样品材料表面的电荷越多。
实施例5：
在上述各实施例的基础上，图10为本发明实施例提供的一种样品材料的电学性能测量装置的结构示意图，所述装置包括：
控制模块1001，用于在压电陶瓷上施加交变电压，使固定在所述压 电陶瓷上的探针在样品材料表面振动；
测量模块1002，用于测量所述探针与所述样品材料之间的目标接触电势差值，并确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅；
确定模块1003，用于根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值，根据所述目标振幅、所述目标接触电势差值和预先保存的所述感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度。
进一步地，所述测量模块，具体用于测量频率与所述探针的共振频率相同的目标感应交流电；将所述目标感应交流电的振幅作为目标振幅。
进一步地，所述确定模块，具体用于根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述探针的功函数值与所述目标接触电势差值的差值，将所述差值确定为所述样品材料表面的目标功函数值。
进一步地，所述确定模块，具体用于根据预先保存的所述目标感应交流电的目标振幅确定函数
Figure PCTCN2021133106-appb-000013
以及所述目标振幅A charge/ω和所述目标接触电势差值V CPD，确定所述样品材料表面的目标电荷密度σ，其中h为预先确定的样品材料的表面形貌和探针与样品材料的预设高度、ω为确定的所述探针的共振频率、A 0为确定的所述探针的振幅、d为确定的电介质厚度、ε 0为确定的真空介电常数、ε为确定的相对介电常数、S为探针针尖的等效面积。
实施例6：
图11为本发明实施例提供的一种电子设备结构示意图，在上述各实施例的基础上，本发明实施例中还提供了一种电子设备，包括处理器1101、通信接口1102、存储器1103和通信总线1104，其中，处理器1101，通信接口1102，存储器1103通过通信总线1104完成相互间的通信；
所述存储器1103中存储有计算机程序，当所述程序被所述处理器1101执行时，使得所述处理器1101执行如下步骤：
在压电陶瓷上施加交变电压，使固定在所述压电陶瓷上的探针在样品材料表面振动；
测量所述探针与所述样品材料之间的目标接触电势差值，并确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅；
根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值，根据所述目标振幅、所述目标接触电势差值和预先保存的所述感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度。
进一步地，所述处理器1101，具体用于所述确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅包括：
测量频率与所述探针的共振频率相同的目标感应交流电；
将所述目标感应交流电的振幅作为目标振幅。
进一步地，所述处理器1101具体用于所述根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值包括：
根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述探针的功函数值与所述目标接触电势差值的差值，将所述差值确定为所述样品材料表面的目标功函数值。
进一步地，所述处理器1101具体用于所述根据所述目标振幅、所述目标接触电势差值和预先保存的所述目标感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度包括：
根据预先保存的所述目标感应交流电的目标振幅确定函数
Figure PCTCN2021133106-appb-000014
以及所述目标振幅A charge/ω和所述目标接触电势差值V CPD，确定所述样品材料表面的目标电荷密度σ，其中h为预先确定的样品材料的表面形貌和探针与样品材料的预设高度、ω为确定的所述探针的共振频率、A 0为确定的所述探针的振幅、d为确定的电介质厚度、ε 0为确定的真空介电常数、ε为确定的相对介电常数、S为探针针尖的等效面积。
上述电子设备提到的通信总线可以是外设部件互连标准(Peripheral Component Interconnect，PCI)总线或扩展工业标准结构(Extended Industry Standard Architecture，EISA)总线等。该通信总线可以分为地 址总线、数据总线、控制总线等。为便于表示，图中仅用一条粗线表示，但并不表示仅有一根总线或一种类型的总线。
通信接口1102用于上述电子设备与其他设备之间的通信。
存储器可以包括随机存取存储器(Random Access Memory，RAM)，也可以包括非易失性存储器(Non-Volatile Memory，NVM)，例如至少一个磁盘存储器。可选地，存储器还可以是至少一个位于远离前述处理器的存储装置。
上述处理器可以是通用处理器，包括中央处理器、网络处理器(Network Processor，NP)等；还可以是数字指令处理器(Digital Signal Processing，DSP)、专用集成电路、现场可编程门陈列或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件等。
实施例7：
在上述各实施例的基础上，本发明实施例还提供了一种计算机可读存储介质，其存储有计算机程序，所述计算机程序被处理器执行如下步骤：
在压电陶瓷上施加交变电压，使固定在所述压电陶瓷上的探针在样品材料表面振动；
测量所述探针与所述样品材料之间的目标接触电势差值，并确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅；
根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值，根据所述目标振幅、所述目标接触电势差值和预先保存的所述感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度。
进一步地，所述确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅包括：
测量频率与所述探针的共振频率相同的目标感应交流电；
将所述目标感应交流电的振幅作为目标振幅。
进一步地，所述根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值包括：
根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述探针的功函数值与所述目标接触电势差值的差值，将所述差值确定为所述样品材料表面的目标功函数值。
进一步地，所述根据所述目标振幅、所述目标接触电势差值和预先保存的所述目标感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度包括：
根据预先保存的所述目标感应交流电的目标振幅确定函数
Figure PCTCN2021133106-appb-000015
以及所述目标振幅A charge/ω和所述目标接触电势差值V CPD，确定所述样品材料表面的目标电荷密度σ，其中h为预先确定的样品材料的表面形貌和探针与样品材料的预设高度、ω为确定的所述探针的共振频率、A 0为确定的所述探针的振幅、d为确定的电介质厚度、ε 0为确定的真空介电常数、ε为确定的相对介电常数、S为探针针尖的等效面积。
本领域内的技术人员应明白，本申请的实施例可提供为方法、系统、或计算机程序产品。因此，本申请可采用完全硬件实施例、完全软件实施例、或结合软件和硬件方面的实施例的形式。而且，本申请可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘存储器、CD-ROM、光学存储器等)上实施的计算机程序产品的形式。
本申请是参照根据本申请的方法、设备(系统)、和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到通用计算机、专用计算机、嵌入式处理机或其他可编程数据处理设备的处理器以产生一个机器，使得通过计算机或其他可编程数据处理设备的处理器执行的指令产生用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。
这些计算机程序指令也可存储在能引导计算机或其他可编程数据处理设备以特定方式工作的计算机可读存储器中，使得存储在该计算机 可读存储器中的指令产生包括指令装置的制造品，该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。
这些计算机程序指令也可装载到计算机或其他可编程数据处理设备上，使得在计算机或其他可编程设备上执行一系列操作步骤以产生计算机实现的处理，从而在计算机或其他可编程设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。
显然，本领域的技术人员可以对本申请进行各种改动和变型而不脱离本申请的精神和范围。这样，倘若本申请的这些修改和变型属于本申请权利要求及其等同技术的范围之内，则本申请也意图包含这些改动和变型在内。

Claims (10)

  1. 一种样品材料的电学性能测量方法，其特征在于，所述方法包括：
    在压电陶瓷上施加交变电压，使固定在所述压电陶瓷上的探针在样品材料表面振动；
    测量所述探针与所述样品材料之间的目标接触电势差值，并确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅；
    根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值，根据所述目标振幅、所述目标接触电势差值和预先保存的所述感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度。
  2. 根据权利要求1所述的方法，其特征在于，所述确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅包括：
    测量频率与所述探针的共振频率相同的目标感应交流电；
    将所述目标感应交流电的振幅作为目标振幅。
  3. 根据权利要求1所述的方法，其特征在于，所述根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值包括：
    根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述探针的功函数值与所述目标接触电势差值的差值，将所述差值确定为所述样品材料表面的目标功函数值。
  4. 根据权利要求1所述的方法，其特征在于，所述根据所述目标振幅、所述目标接触电势差值和预先保存的所述目标感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度包括：
    根据预先保存的所述目标感应交流电的目标振幅确定函数
    Figure PCTCN2021133106-appb-100001
    以及所述目标振幅A charge/ω 和所述目标接触电势差值V CPD，确定所述样品材料表面的目标电荷密度σ，其中h为预先确定的样品材料的表面形貌和探针与样品材料的预设高度、ω为确定的所述探针的共振频率、A 0为确定的所述探针的振幅、d为确定的电介质厚度、ε 0为确定的真空介电常数、ε为确定的相对介电常数、S为探针针尖的等效面积。
  5. 一种样品材料的电学性能测量装置，其特征在于，所述装置包括：
    控制模块，用于在压电陶瓷上施加交变电压，使固定在所述压电陶瓷上的探针在样品材料表面振动；
    测量模块，用于测量所述探针与所述样品材料之间的目标接触电势差值，并确定所述探针在所述样品材料表面振动产生的感应交流电的目标振幅；
    确定模块，用于根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述样品材料表面的目标功函数值，根据所述目标振幅、所述目标接触电势差值和预先保存的所述感应交流电的目标振幅确定函数，确定所述样品材料表面的目标电荷密度。
  6. 根据权利要求5所述的装置，其特征在于，所述测量模块，具体用于测量频率与所述探针的共振频率相同的目标感应交流电；将所述目标感应交流电的振幅作为目标振幅。
  7. 根据权利要求5所述的装置，其特征在于，所述确定模块，具体用于根据所述目标接触电势差值和确定的所述探针的功函数值，确定所述探针的功函数值与所述目标接触电势差值的差值，将所述差值确定为所述样品材料表面的目标功函数值。
  8. 根据权利要求5所述的装置，其特征在于，所述确定模块，具体用于根据预先保存的所述目标感应交流电的目标振幅确定函数
    Figure PCTCN2021133106-appb-100002
    以及所述目标振幅A charge/ω和所述目标接触电势差值V CPD，确定所述样品材料表面的目标电荷密度σ，其中h为预先确定的样品材料的表面形貌和探针与样品材料的预设高度、ω为确定的所述探针的共振频率、A 0为确定的所述探针的振 幅、d为确定的电介质厚度、ε 0为确定的真空介电常数、ε为确定的相对介电常数、S为探针针尖的等效面积。
  9. 一种电子设备，其特征在于，所述电子设备包括处理器和存储器，所述存储器用于存储程序指令，所述处理器用于执行存储器中存储的计算机程序时实现如权利要求1-4中任一所述样品材料的电学性能测量方法的步骤。
  10. 一种计算机可读存储介质，其特征在于，其存储有计算机程序，所述计算机程序被处理器执行时实现如权利要求1-4中任一所述样品材料的电学性能测量方法的步骤。
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