WO2022169072A1 - Élément comprenant une structure de prévention de diffusion et une couche de jonction formée par électrodéposition, et procédé destiné à le fabriquer - Google Patents

Élément comprenant une structure de prévention de diffusion et une couche de jonction formée par électrodéposition, et procédé destiné à le fabriquer Download PDF

Info

Publication number
WO2022169072A1
WO2022169072A1 PCT/KR2021/016054 KR2021016054W WO2022169072A1 WO 2022169072 A1 WO2022169072 A1 WO 2022169072A1 KR 2021016054 W KR2021016054 W KR 2021016054W WO 2022169072 A1 WO2022169072 A1 WO 2022169072A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
thermoelectric
medium temperature
pbte
diffusion barrier
Prior art date
Application number
PCT/KR2021/016054
Other languages
English (en)
Korean (ko)
Inventor
김세일
나종주
이주열
이주영
좌용호
Original Assignee
한국재료연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국재료연구원 filed Critical 한국재료연구원
Publication of WO2022169072A1 publication Critical patent/WO2022169072A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur

Definitions

  • the present invention relates to a device including a bonding layer formed by an electroplating method and a diffusion preventing structure, and a method for manufacturing the same. More specifically, the present invention relates to a device including a bonding layer and a diffusion prevention structure formed by an electroplating method having excellent bonding performance, preventing peeling and cracking, and capable of mass-producing large-area at low cost, and a method for manufacturing the same.
  • Ceramics have greater strength at high temperatures and lower thermal conductivity and thermal expansion coefficient than metals. application is limited.
  • thermoelectric power generation it is a field that has been actively developed until recently in response to the rapid development of thermoelectric materials and the demand for recovery of a vast amount of waste heat resources wasted.
  • the transportation field about 40% of energy is wasted as waste heat, and in order to recover it, increase fuel efficiency and reduce carbon dioxide generation, the development of a medium temperature thermoelectric power module is inevitable.
  • thermoelectric module At the junction interface between the heterogeneous junction thermoelectric material and the metal layer, various diffusion phenomena occur near the operating temperature of the thermoelectric module for medium temperature of 400 to 600°C. Such diffusion causes a secondary growth in the thickness of the diffusion layer, resulting in a serious long-term reliability problem in that the power generation output is reduced due to a decrease in the proportion of thermoelectric materials in the thermoelectric module. In addition to the module output decrease, when the thermal expansion coefficient of the generated diffusion layer has a large gap with the thermoelectric material and electrode forming the original interface, cracks occur on the bonding surface, which causes serious problems.
  • the currently mainly used method for manufacturing a diffusion barrier layer (metallization layer) for a medium temperature thermoelectric element is to raise a powder, foil, or plate of a material to be used as a diffusion barrier layer on top of the medium temperature thermoelectric material powder, and discharge plasma sintering ( Intermetallic compound (IMC) is formed by sintering by Spark Plasma Sintering (SPS) method.
  • IMC Intermetallic compound
  • SPS Spark Plasma Sintering
  • Another object of the present invention is to provide a medium temperature thermoelectric device that prevents peeling and cracks and can be mass-produced over a large area at low cost.
  • Another object of the present invention is to provide a method for manufacturing a medium-temperature thermoelectric element capable of mass-producing a large-area medium-temperature thermoelectric element at low cost through a simple process.
  • a difference between the coefficient of thermal expansion of the material constituting the thermoelectric material part and the coefficient of thermal expansion of the first material may be 5 x 10 -6 K -1 or less.
  • the material constituting the thermoelectric material part may be PbTe, the first material may be Te, and the second material may be Ni.
  • the material constituting the thermoelectric material part may be PbTe
  • the first material may be Sn
  • the second material may be Cu
  • the material constituting the thermoelectric material part may be PbTe, the first material may be Co, and the second material may be Fe.
  • the diffusion barrier layer may have a thickness of 0.5 to 10 ⁇ m.
  • the intermetallic compound of the first layer may be formed by heat treatment after plating a second material on the plating layer of the first material formed on the substrate part.
  • the material constituting the thermoelectric material part is prevented from being diffused into the diffusion barrier layer by the first material plating layer, so that the thermoelectric material part is more uniform than when the diffusion barrier layer formed by the SPS (Spark Plasma Sintering) process is formed. It can have one composition.
  • the second layer may be formed on an upper surface and both sides of the first layer.
  • thermoelectric material part of a medium temperature thermoelectric element preparing a thermoelectric material part of a medium temperature thermoelectric element; and ii) forming a diffusion barrier layer formed of a first layer and a second layer on the thermoelectric material part, wherein step ii) includes ii-1) electroplating a first material on the thermoelectric material part forming a first material plating layer; ii-2) forming a second material plating layer by electroplating a second material forming an intermetallic compound with the first material on the first material plating layer; and ii-3) a first layer comprising an intermetallic compound of a first material and a second material by heat treatment and in contact with the thermoelectric material part; and forming a second layer made of only a second material and formed on the first layer.
  • a difference between a coefficient of thermal expansion of a material constituting the thermoelectric material part and a coefficient of thermal expansion of the first material may be 5 x 10 -6 K -1 or less.
  • the material constituting the thermoelectric material part may be PbTe, the first material may be Te, and the second material may be Ni.
  • the material constituting the thermoelectric material part may be PbTe, the first material may be Sn, and the second material may be Cu.
  • the material constituting the thermoelectric material part may be PbTe, the first material may be Co, and the second material may be Fe.
  • thermoelectric material part in the medium temperature thermoelectric device manufacturing method, is prevented from being diffused into the diffusion barrier layer by the first material plating layer in step ii), formed by a spark plasma sintering (SPS) process
  • SPS spark plasma sintering
  • the thermoelectric material part may have a more uniform composition than in the case where the diffusion barrier layer is formed.
  • thermoelectric device a method for manufacturing a medium temperature thermoelectric device, the method comprising: electroplating a second material on an upper surface of the first material plating layer; and electroplating the second material so that the second layer is formed on the upper surface and both sides of the first layer.
  • the present application may provide a device having an excellent bonding performance and a diffusion preventing structure.
  • the present application includes a diffusion prevention layer composed of an electroplating layer having a similar thermal expansion coefficient to that of the thermoelectric material portion, thereby preventing peeling and cracking and providing a medium temperature thermoelectric device having a uniform and thin diffusion prevention layer.
  • the present application may provide a medium temperature thermoelectric device manufacturing method capable of mass-producing a large area medium temperature thermoelectric device at low cost through a simple process.
  • thermoelectric element 1A and 1B are schematic views showing the structure of a thermoelectric element.
  • FIG. 2 is a schematic diagram schematically showing a method of forming a diffusion barrier layer for a medium temperature thermoelectric element by an electroplating method according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram schematically showing a method of forming a Ni x Te y diffusion barrier layer for a medium temperature thermoelectric device by an electroplating method according to an embodiment of the present invention.
  • 4A is a graph showing the coefficient of thermal expansion (CTE) of PbTe.
  • 4B is a graph showing the coefficient of thermal expansion (CTE) of nickel.
  • FIG. 5 is a photograph showing a phenomenon in which a nickel layer is peeled off when a nickel layer is formed as a diffusion barrier layer by an electroplating process and then heat treated.
  • FIG. 6 is a graph showing X-ray diffraction patterns of a Ni x Te y diffusion barrier layer for a medium temperature thermoelectric element formed by an electroplating method according to an embodiment of the present invention.
  • FIG. 7 is a photograph showing the results of an adhesion test of a Ni x Te y diffusion barrier layer for a medium temperature thermoelectric device formed by an electroplating method according to an embodiment of the present invention.
  • the first material and the second material may be all materials and metals except for metals and plastics, but are not limited thereto, but the first material may be a ceramic, and the second material may be a metal.
  • the bonding layer and the diffusion preventing structure are composed of an intermetallic compound of the first material material and the second material material, and a first layer in contact with the second material and a material forming an intermetallic compound with the first material, Including the second layer formed on the first layer, the first material and the second material composed of two materials having different physical and chemical properties have a structure in which a transition region, that is, an interface product, is formed that can provide compatibility between the first material and the second material.
  • the device may be a thermoelectric device in which a diffusion barrier layer serving as a bonding material is formed while preventing material movement between the thermoelectric material and the electrode.
  • the device structure may be applied to a power semiconductor device. That is, it can be applied to the manufacture of a solder material (eg Cu-Sn) bonding to DBC (direct bond copper, Cu/Al 2 O 3 /Cu) of a power semiconductor device.
  • the device structure can be applied to sensors, microelectronic component circuits, MEMS, high-efficiency heat exchangers, and electronic product packaging fields.
  • thermoelectric element 1A and 1B are schematic views showing the structure of a thermoelectric element.
  • the medium temperature thermoelectric element largely includes a substrate part 100 , a thermoelectric material part 200 , and a diffusion barrier layer 300 .
  • the thermoelectric material part 200 is a part that generates electricity by receiving heat, and may include two or more thermoelectric materials.
  • the type of the thermoelectric material part 200 is not particularly limited as long as it can generate electricity by receiving heat.
  • it may be composed of PbTe.
  • the substrate part 100 is a part for arranging and fixing the thermoelectric material part 200 . As shown in FIG. 1A , it may include a ceramic substrate 110 , a Cu electrode 120 , and a blazing filter 130 .
  • the blazing filter 130 is a layer for bonding the Cu electrode 120 and the diffusion barrier layer 300 .
  • the diffusion barrier layer 300 is a metallization layer for bonding both between the thermoelectric material part 200 and the substrate part 100, and the material of the thermoelectric material 200 and the material of the substrate part 100 is They diffuse to each other and serve to prevent degradation.
  • FIG. 2 is a schematic diagram schematically showing a method of forming a diffusion barrier layer for a medium temperature thermoelectric element by an electroplating method according to an embodiment of the present invention.
  • 3 is a schematic diagram schematically showing a method of forming a Ni x Te y diffusion barrier layer for a medium temperature thermoelectric device by an electroplating method according to an embodiment of the present invention.
  • the diffusion barrier layer 300 includes a first layer 330 made of an intermetallic compound of a first material and a second material and in contact with the thermoelectric material unit 200 ; and a second layer (322) made of a second material forming an intermetallic compound with the first material and formed on the first layer.
  • the first layer 330 and the second layer 322 in contact with the thermoelectric material part 200 are made of different materials to suppress cracks and peeling compared to the diffusion prevention layer 300 formed as a single layer. can do.
  • the intermetallic compound of the first layer 330 may be formed by heat treatment after forming the second material plating layer 320 on the first material plating layer 310 formed on the thermoelectric material part 200 .
  • thermoelectric material unit 200 may have a uniform composition.
  • the difference between the coefficient of thermal expansion (CTE) of the material constituting the thermoelectric material part 200 and the coefficient of thermal expansion of the first material is 5 x 10 -6 K -1 or less crack Or it may be suitable for suppressing the occurrence of peeling. If the coefficient of thermal expansion of the diffusion barrier layer 300 deposited on the thermoelectric material part 200 for medium temperature differs greatly from the coefficient of thermal expansion of the thermoelectric material part 200, peeling or cracking may occur at the device driving temperature (500 to 600 °C). high portential. Therefore, in the present invention, the thermoelectric material unit ( By forming the first layer 330 in contact with the 200), it is possible to suppress the occurrence of cracks or peeling.
  • CTE coefficient of thermal expansion
  • the material constituting the thermoelectric material part 200 may be PbTe, the first material may be Te, and the second material may be Ni.
  • the thermal expansion coefficient of the PbTe is constant from 300K (26.85° C.) to about 20 ⁇ 10 ⁇ 6 K ⁇ 1 (see FIG. 4a ).
  • the thermal expansion coefficient of nickel is about 13 x 10 -6 K -1 at room temperature, and about 16-17 x 10 -6 K -1 at 400 to 600 °C, so the difference in thermal expansion coefficient with PbTe is 4 x 10 -6 more than K -1 .
  • There may be a problem of peeling during heat treatment at a driving temperature (600° C.) see FIG. 5 ). Accordingly, in the present application, the peeling or cracking problem can be solved by forming the plating layer 310 of the first material with Te having a thermal expansion coefficient of about 19 x 10 -6 K -1 similar to PbTe.
  • the material constituting the thermoelectric material part 200 may be PbTe
  • the first material may be Sn
  • the second material may be Cu.
  • Sn-Cu must maintain a solid phase above the PbTe driving temperature of 600 °C (medium temperature region). In order to maintain the solid phase at 600°C or higher through the phase diagram, it may be suitable for Cu to have a range of about 75 ⁇ 90% in the Sn-Cu alloy.
  • the Sn-Cu alloy is electroplated at once and deposited on PbTe, the electrode is highly likely to fall off due to the difference in the coefficient of thermal expansion between the two.
  • the material constituting the thermoelectric material part 200 may be PbTe
  • the first material may be Co
  • the second material may be Fe.
  • Co (cobalt; 13 x 10 -6 /°C) and Fe (iron; 11.7 x 10 -6 /°C) are sequentially formed by electroplating as a first material plating layer 310 and a second material plating layer 320, followed by heat treatment
  • the diffusion barrier layer may have a thickness of 0.5 to 30 ⁇ m. Even though the diffusion barrier layer of the present application is thin, the material constituting the thermoelectric material part 200 is prevented from being diffused into the diffusion barrier layer 300 by the first material plating layer 310 of the first material as described above. Material properties can be improved.
  • Ni powder is coated on the PbTe powder, which is a thermoelectric material, to form an electrode layer, and Ni x Te y is formed as Te and Ni powder of the thermoelectric material are diffused through the heat treatment process.
  • thermoelectric material since Te can escape from PbTe, PbTe rich in Pb is formed, rather than having a PbTe composition, on the upper side, which may adversely affect the properties of the thermoelectric material.
  • PbTe rich in Pb is formed, rather than having a PbTe composition, on the upper side, which may adversely affect the properties of the thermoelectric material.
  • the present invention by depositing a Te plating layer on the bulk PbTe first, it is possible to prevent Te from escaping from the PbTe, thereby improving the properties of the thermoelectric material.
  • the second layer 322 may be formed on the upper surface and both sides of the first layer 330 . According to the above configuration, the bonding strength between the diffusion barrier layer 300 and the thermoelectric material unit 200 can be further improved.
  • a method for manufacturing a medium temperature thermoelectric element includes the steps of: i) preparing a thermoelectric material unit 200 of the medium temperature thermoelectric element; and ii) forming a diffusion barrier layer 300 formed of a first layer 330 and a second layer 322 on the thermoelectric material unit 200, wherein step ii) is ii-1) forming a first material plating layer 310 by electroplating a first material on the thermoelectric material unit 200; ii-2) forming a second material plating layer 320 by electroplating a second material forming an intermetallic compound with the first material on the first material plating layer 310; and ii-3) a first layer 330 made of an intermetallic compound of a first material and a second material by heat treatment and in contact with the thermoelectric material part 200 ; and forming a second layer 322 made of only a second material and formed on the first layer.
  • the present invention is a second method capable of forming an intermetallic compound by first plating a material used as a thermoelectric material (eg, PbTe) and a material having a small difference in thermal expansion coefficient and reacting with the first plating material during heat treatment It is characterized in that the process of manufacturing the diffusion barrier layer by plating the material.
  • a material used as a thermoelectric material eg, PbTe
  • Step i) is a step of preparing the thermoelectric material part 200 of the medium temperature thermoelectric element.
  • the type of the constituent material of the thermoelectric material unit 200 is not particularly limited as long as it receives heat to generate electricity.
  • the thermoelectric material part 200 may be made of PbTe.
  • the difference between the thermal expansion coefficient of the material constituting the thermoelectric material part 200 and the thermal expansion coefficient of the first material may be 5 x 10 -6 K -1 or less, but is not limited thereto. According to the above configuration, it may be suitable for suppressing the occurrence of cracks or peeling of the diffusion barrier layer 300 .
  • the material constituting the thermoelectric material part 200 may be PbTe, the first material may be Te, and the second material may be Ni.
  • the thermal expansion coefficient of the PbTe is constant from 300K (26.85° C.) to about 20 ⁇ 10 ⁇ 6 K ⁇ 1 (see FIG. 4a ).
  • the thermal expansion coefficient of nickel is about 13 x 10 -6 K -1 at room temperature, and about 16-17 x 10 -6 K -1 at 400 to 600 °C, so the difference in thermal expansion coefficient with PbTe is 4 x 10 -6 K -1 or more.
  • There may be a problem of peeling during heat treatment at a driving temperature (600° C.) see FIG. 5 ). Accordingly, in the present application, the peeling or cracking problem can be solved by forming the plating layer 310 of the first material with Te having a thermal expansion coefficient of about 19 x 10 -6 K -1 similar to PbTe.
  • the material constituting the thermoelectric material part 200 may be PbTe
  • the first material may be Sn
  • the second material may be Cu.
  • Sn-Cu must maintain a solid phase above the PbTe driving temperature of 600 °C (medium temperature region). In order to maintain the solid phase at 600°C or higher through the phase diagram, it may be suitable for Cu to have a range of about 75 ⁇ 90% in the Sn-Cu alloy.
  • the Sn-Cu alloy is electroplated at once and deposited on PbTe, the electrode is highly likely to fall off due to the difference in the coefficient of thermal expansion between the two.
  • the material constituting the thermoelectric material part 200 may be PbTe
  • the first material may be Co
  • the second material may be Fe.
  • Co (cobalt; 13 x 10 -6 /°C) and Fe (iron; 11.7 x 10 -6 /°C) are sequentially formed as a first material plating layer 310 and a second material plating layer 320 by electroplating, followed by heat treatment
  • thermoelectric material part 200 is prevented from being diffused into the diffusion barrier layer 300 by the first material plating layer 310, so that SPS (Spark Plasma Sintering) ), since the thermoelectric material part 200 may have a more uniform composition than in the case of forming the diffusion barrier layer formed by the above process, the characteristics of the thermoelectric material may be improved. More specifically, in the case of the conventional SPS process, Ni powder is applied on the PbTe powder to form an electrode layer, and Ni x Te y is formed while Te and Ni powder of the thermoelectric material material diffuse through the heat treatment process.
  • SPS Spark Plasma Sintering
  • the method includes: electroplating to form a second material plating layer 320 with a second material on the upper surface of the first material plating layer 310 ; and electroplating the second material thin film 320 ′ such that the second layer 322 is formed on the upper surface and both sides of the first layer 330 .
  • it may be suitable for suppressing the occurrence of cracks or peeling of the diffusion barrier layer 300 .
  • the thickness may be about 0.5 to 10 ⁇ m.
  • the SPS process since the size of the powder used is large, it is difficult to form a thin diffusion barrier layer as in the electroplating method.
  • the heat treatment temperature must be controlled along with the pressure control. If more pressure is applied to reduce the thickness, cracks or fractures may occur in the specimen, and if more temperature is applied, the desired phase may not come out. There are disadvantages. Conversely, if less pressure is applied, a void may be formed between the electrode and the substrate, and if the temperature is reduced, a desired phase may not be obtained or sintering may not be performed properly.
  • thermoelectric device of the present invention a small amount of material can be used because the diffusion barrier layer is formed using electroplating, and since a precursor of the first material and the second material is used, even if a material with low purity is used There is no influence on the characteristics of the thermoelectric element.
  • a precursor used in electroplating even if the purity of the metal salt or metal oxide is low, in reality, only the desired metallic material is deposited on the substrate at the optimized potential during the plating process. Even after that, it does not affect the electrode characteristics.
  • the amount of electrode material used for synthesizing the electrode is considerably smaller than that of the SPS process when electroplating is used, there is a significant advantage in terms of cost.
  • thermoelectric material part of PbTe was formed on the thermoelectric material part of PbTe by electroplating under the following conditions.
  • Ni thin film was formed on the Ni plating layer by electroplating on the exposed upper surface of the thermoelectric material part and on both sides of the Te layer.
  • the temperature was raised to 350°C at 10°C/min temperature rising condition, and then a heat treatment process was performed in which the temperature was maintained at 350°C for 1 hour.
  • the heat treatment process was performed in an N 2 atmosphere.
  • the diffusion barrier layer including the first layer Ni 3 Te 2 and the second layer Ni layer is formed on the thermoelectric material part of the thermoelectric element by the heat treatment.
  • FIG. 4A is a graph showing the coefficient of thermal expansion (CTE) of PbTe
  • FIG. 4B is a graph showing the coefficient of thermal expansion (CTE) of nickel.
  • the graph in Fig. 4a shows the CTE of bulk materials of PbTe and ZnSe.
  • the dotted line represents the developed value in the simulation.
  • the graph of FIG. 4b shows the CTE of Ni-YSZ in the range of 0 to 1000° C., and in the case of the nickel CTE, about 16 to 17 x 10 -6 K -1 in the range of 400 to 600° C.
  • 5 is a photograph showing a phenomenon in which a nickel layer is peeled off when a nickel layer is formed as a diffusion barrier layer by an electroplating process and then heat treated.
  • the thermal expansion coefficient of the PbTe is constant from 300K to about 20 x 10 -6 K -1 .
  • the thermal expansion coefficient of nickel is about 13 x 10 -6 K -1 at room temperature and about 16-17 x 10 -6 K -1 at 400 to 600 °C, so the difference in thermal expansion coefficient with PbTe It can be seen that is about 4 x 10 -6 K -1 .
  • FIG. 5 when a Ni layer was formed on a PbTe thermoelectric material using an electroplating process due to the difference in the coefficient of thermal expansion as described above, peeling occurred during heat treatment at a driving temperature (600° C.).
  • FIG. 6 is a graph showing X-ray diffraction patterns of a Ni x Te y diffusion barrier layer for a medium temperature thermoelectric element formed by an electroplating method according to an embodiment of the present invention. As shown in the graph, it can be confirmed that the diffusion barrier layer including the first layer Ni 3 Te 2 and the second layer Ni layer is formed on the thermoelectric material part of the thermoelectric element according to the present invention.
  • thermoelectric material part and the diffusion prevention layer of the thermoelectric element according to the present invention have excellent bonding strength.
  • the diffusion barrier layer described in the present invention is to produce an interfacial diffusion prevention IMC for a medium temperature thermoelectric material. More specifically, tellurium and nickel layers are sequentially deposited at room temperature by an electrodeposition method, and a low temperature heat treatment process ( 350°C) to form an IMC (Ni x Te y ) phase between Ni and Te.
  • the diffusion barrier layer can be manufactured at low cost and mass-produced in a large area. There is a big advantage that In the case of the diffusion barrier layer synthesized in this way, it was confirmed that peel-off from the thermoelectric material did not occur when heat treatment was performed at 600° C., which is the driving temperature of the thermoelectric element for medium temperature.
  • thermoelectric material If the coefficient of thermal expansion (CTE) of the diffusion barrier layer deposited on the medium temperature thermoelectric material is different from that of the thermoelectric material, there is a high possibility of peeling or cracking at the device operating temperature (500 ⁇ 600°C).
  • a stable metallization layer Ni/Ni 3 Te 2 ) was formed in a simple way by depositing Te with a thermal expansion coefficient almost similar to that of PbTe using electroplating first, then plating a Ni layer thereon and heat-treating it at low temperature. , the formed metallization layer did not peel or crack even at the thermoelectric element driving temperature.
  • the diffusion barrier layer and its manufacturing method described in the present invention is a technology for synthesizing a diffusion barrier layer for a medium temperature thermoelectric material based on plating for the first time.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

La présente invention porte sur un élément comprenant une structure de prévention de diffusion et une couche de jonction formée par électrodéposition, et sur un procédé destiné à le fabriquer. Plus précisément, la présente invention porte sur un élément comprenant une structure de prévention de diffusion et une couche de jonction formée par électrodéposition, et sur un procédé destiné à le fabriquer, lesquels ont une excellente performance de jonction, empêchent le décollement et l'apparition de fissures, et permettent la production de masse à grande échelle à bas coût.
PCT/KR2021/016054 2021-02-08 2021-11-05 Élément comprenant une structure de prévention de diffusion et une couche de jonction formée par électrodéposition, et procédé destiné à le fabriquer WO2022169072A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020210017637A KR20220115664A (ko) 2021-02-08 2021-02-08 전기도금법으로 형성된 접합층 및 확산방지 구조를 포함하는 소자 및 이의 제조방법
KR10-2021-0017637 2021-02-08

Publications (1)

Publication Number Publication Date
WO2022169072A1 true WO2022169072A1 (fr) 2022-08-11

Family

ID=82741266

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2021/016054 WO2022169072A1 (fr) 2021-02-08 2021-11-05 Élément comprenant une structure de prévention de diffusion et une couche de jonction formée par électrodéposition, et procédé destiné à le fabriquer

Country Status (2)

Country Link
KR (1) KR20220115664A (fr)
WO (1) WO2022169072A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016115866A (ja) * 2014-12-17 2016-06-23 古河電気工業株式会社 熱電変換素子および熱電変換モジュール
KR20180022611A (ko) * 2016-08-23 2018-03-06 희성금속 주식회사 열전소자 및 이를 포함하는 열전모듈
KR20180084711A (ko) * 2016-06-01 2018-07-25 엘지이노텍 주식회사 열전 레그 및 이를 포함하는 열전 소자
JP2020155556A (ja) * 2019-03-19 2020-09-24 株式会社Kelk 熱電モジュール及び光モジュール
KR20200140015A (ko) * 2019-06-05 2020-12-15 엘지이노텍 주식회사 열전소자

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101983627B1 (ko) 2017-06-13 2019-05-29 한국과학기술원 3차원 밀도 구배 접합 구조를 갖는 열전 모듈 및 그 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016115866A (ja) * 2014-12-17 2016-06-23 古河電気工業株式会社 熱電変換素子および熱電変換モジュール
KR20180084711A (ko) * 2016-06-01 2018-07-25 엘지이노텍 주식회사 열전 레그 및 이를 포함하는 열전 소자
KR20180022611A (ko) * 2016-08-23 2018-03-06 희성금속 주식회사 열전소자 및 이를 포함하는 열전모듈
JP2020155556A (ja) * 2019-03-19 2020-09-24 株式会社Kelk 熱電モジュール及び光モジュール
KR20200140015A (ko) * 2019-06-05 2020-12-15 엘지이노텍 주식회사 열전소자

Also Published As

Publication number Publication date
KR20220115664A (ko) 2022-08-18

Similar Documents

Publication Publication Date Title
WO2017014584A1 (fr) Module thermoélectrique et son procédé de fabrication
WO2016171530A1 (fr) Procédé de fabrication de substrat en céramique et substrat en céramique fabriqué par celui-ci
US3766634A (en) Method of direct bonding metals to non-metallic substrates
US6938333B2 (en) Method of manufacturing a metal-ceramic circuit board
WO2017014615A1 (fr) Élément thermoélectrique utilisant un liant amorphe et exothermique et son procédé de fabrication
WO2020085681A1 (fr) Élément thermoélectrique et son procédé de fabrication
WO2014051233A2 (fr) Carte de circuit imprimé
WO2019093609A1 (fr) Plaque de mandrin, structure de mandrin ayant une plaque de mandrin, et dispositif de soudure ayant une structure de mandrin
WO2018110794A1 (fr) Élément thermoélectrique retenu par oxydation et volatilisation et son procédé de fabrication
WO2022169072A1 (fr) Élément comprenant une structure de prévention de diffusion et une couche de jonction formée par électrodéposition, et procédé destiné à le fabriquer
WO2019054718A2 (fr) Procédé de fabrication d'un masque intégré à un cadre
EP2856502A1 (fr) Substrat de boîtier de semi-conducteurs, système de boîtier utilisant un tel substrat et son procédé de fabrication
WO2023113287A1 (fr) Dissipateur thermique revêtu ayant une structure maillée verticale et son procédé de fabrication
WO2019156348A1 (fr) Masque intégré à un cadre et procédé de fabrication d'un masque intégré à un cadre
WO2017022991A1 (fr) Procédé pour l'assemblage de matériaux extra-durs au moyen de film de placage métallique ayant des caractéristiques amorphes et thermiques
WO2017018749A1 (fr) Procédé de fabrication d'une fine plaque ayant des caractéristiques amorphes et de chauffage par l'intermédiaire d'un placage
EP0606426A1 (fr) Procede de fabrication d'un contact electroconducteur utilise pour connecter des supraconducteurs a temperature de transition elevee
WO2020032511A1 (fr) Système de transfert de masque et procédé de fabrication de masque ayant un cadre intégré
WO2020149465A1 (fr) Procédé de fabrication de matériau thermoélectrique
WO2022025325A1 (fr) Matériau thermoélectrique comprenant une couche barrière de diffusion multicouche, et élément thermoélectrique pourvu de celui-ci
WO2022092377A1 (fr) Matériau thermoélectrique comprenant une couche barrière de diffusion multicouche, et élément thermoélectrique le comprenant
WO2013180443A1 (fr) Barre omnibus en fer ayant une couche de cuivre, et procédé de fabrication de cette dernière
WO2021060644A1 (fr) Supraconducteur à haute température ayant de multiples couches supraconductrices et procédé de fabrication de supraconducteur à haute température correspondant
WO2020130282A1 (fr) Élément thermoélectrique et pâte à braser comprise dans celui-ci
WO2020022661A1 (fr) Procédé de fabrication de masque intégré dans un cadre

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21924968

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21924968

Country of ref document: EP

Kind code of ref document: A1