WO2019093609A1 - Plaque de mandrin, structure de mandrin ayant une plaque de mandrin, et dispositif de soudure ayant une structure de mandrin - Google Patents

Plaque de mandrin, structure de mandrin ayant une plaque de mandrin, et dispositif de soudure ayant une structure de mandrin Download PDF

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Publication number
WO2019093609A1
WO2019093609A1 PCT/KR2018/006277 KR2018006277W WO2019093609A1 WO 2019093609 A1 WO2019093609 A1 WO 2019093609A1 KR 2018006277 W KR2018006277 W KR 2018006277W WO 2019093609 A1 WO2019093609 A1 WO 2019093609A1
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WO
WIPO (PCT)
Prior art keywords
plate
vacuum
chuck
heating
wafer
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Application number
PCT/KR2018/006277
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English (en)
Korean (ko)
Inventor
남성용
정인영
Original Assignee
주식회사 미코
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Publication date
Application filed by 주식회사 미코 filed Critical 주식회사 미코
Priority to CN201880072948.4A priority Critical patent/CN111344855A/zh
Priority to SG11202004112PA priority patent/SG11202004112PA/en
Publication of WO2019093609A1 publication Critical patent/WO2019093609A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Definitions

  • the present invention relates to a bonding apparatus having a chuck plate, a chuck structure having the chuck plate and a chuck structure, and more particularly to a bonding apparatus having a chuck plate for holding a wafer, a chuck structure having the chuck plate, .
  • the stacked chip package is a semiconductor package in which chips are stacked on a package substrate, and can achieve high integration.
  • the stacked chip package is manufactured at a chip level or a wafer level.
  • bonding and bonding are performed by applying heat and pressure to chips, chips, wafers, wafers or chips and wafers.
  • the bonding apparatus is referred to as a bonding apparatus.
  • the bonding apparatus stacks the chip on the wafer with a bonding head while supporting the wafer with a chuck structure, and thermally compresses the wafer and the chip with a bonding head.
  • the chuck structure is composed of a heating plate incorporating a heating element and a chuck plate transmitting heat generated in the heating plate to the wafer.
  • the chuck plate is made of an aluminum nitride material having a high thermal conductivity, the wafer can be rapidly and easily heated.
  • the thermal conductivity of the chuck plate is high, when the wafer is always preheated during the bonding process, the soldering material between the wafer and the chip is crushed. Therefore, a bonding failure may occur between the wafer and the chip.
  • the chuck structure has vacuum holes to vacuum adsorb the wafer. Since the vacuum holes are formed radially with respect to the center of the chuck structure, the gap between the vacuum holes located at the outermost periphery is relatively wide. Therefore, the vacuum attraction force of the edge portion of the chuck structure is relatively low, so that the wafer may not completely come into close contact with the chuck structure.
  • the present invention provides a chuck plate having a relatively low thermal conductivity and having a relatively narrow gap between vacuum holes positioned at an outermost position.
  • the present invention provides a chuck structure having the chuck plate.
  • the present invention provides a bonding apparatus having the chuck structure.
  • a chuck plate according to the present invention is placed on a heating plate and supports a wafer on an upper surface and transfers heat generated in the heating plate to the wafer so as to heat the wafer, And a vacuum groove formed on the lower surface so as to be vacuum-adsorbed on the heating plate and defined by the upper surface of the heating plate to form a space.
  • the chuck plate may be made of a material to which titanium oxide is added to aluminum oxide so that the chuck plate has a thermal conductivity lower than a thermal conductivity of aluminum nitride.
  • 10 to 20 parts by weight of the titanium may be added to 100 parts by weight of the aluminum oxide in the chuck plate.
  • the thermal conductivity of the chuck plate may be 5 to 20 W / m ⁇ k.
  • the gap of the vacuum holes located at the outermost periphery of the chuck plate may be larger than the gap of the vacuum holes located inside the outermost periphery, Can be narrowly arranged.
  • the chuck structure according to the present invention includes a heating plate having a heating element for generating heat by an external power source and having a first vacuum line and a second vacuum line extending to an upper surface to provide a vacuum force, And a second vacuum line disposed on the heating plate for supporting the wafer on an upper surface thereof and transferring heat generated in the heating plate to the wafer so that the wafer is heated and for attracting the wafer by the vacuum force
  • the third vacuum line is connected to the first vacuum line on the lower surface of the chuck plate, and the lower surface of the chuck plate and the upper surface of the heating plate And a plurality of vacuum holes extending from the lower surface of the chuck plate through the vacuum groove to the upper surface of the chuck plate.
  • the first vacuum line is connected to the third vacuum line on the upper surface of the heating plate, and the lower surface of the chuck plate and the upper surface of the heating plate And a plurality of vacuum holes extending from the lower surface through the heating plate to the upper surface on which the vacuum groove is formed.
  • an alignment pin is provided on one surface of the upper surface of the heating plate and the lower surface of the chuck plate, and the other surface of the chuck plate receives the alignment pin, Receiving grooves for aligning the plates may be provided.
  • the chuck structure includes a guide ring which is hooked on a groove formed along a top edge of the heating plate and guides the periphery of the heating plate, and a guide ring which covers the top edge of the chuck plate, And a clamp fixed to the guide ring for fixing the chuck plate to the heating plate.
  • the clamp may be placed in a groove formed along the top edge of the chuck plate such that the top surface of the clamp and the top surface of the chuck plate are at the same height.
  • the guide ring and the clamp may be made of a material having a lower thermal conductivity than the chuck plate in order to prevent heat loss through the side surfaces of the heating plate and the chuck plate.
  • the bonding apparatus includes a heating plate having a heating element for generating heat by an external power source and having a first vacuum line and a second vacuum line extending to an upper surface to provide a vacuum force, And a second vacuum line disposed on the heating plate for supporting the wafer on an upper surface thereof and transferring heat generated in the heating plate to the wafer so that the wafer is heated and for attracting the wafer by the vacuum force
  • a chuck plate having a third vacuum line and a chuck plate connected to the second vacuum line on the lower surface so as to be vacuum-adsorbed on the heating plate and having a vacuum groove defined by the upper surface of the heating plate, And bonding and bonding the chip to the wafer by fixing and heating the chip,
  • the draw can be made.
  • the bonding head includes: a base block; and a heating element provided on the base block for generating heat by an external power source to heat the chip, A heating block having a fourth vacuum line and a fifth vacuum line extending to the top surface to provide a second vacuum line; And an adsorption plate fixed on the heating block by a vacuum force of the fourth vacuum line and having a vacuum hole connected to the fifth vacuum line for fixing the chip by a vacuum force.
  • the chuck plate according to the present invention is made of a material to which titanium oxide is added to aluminum oxide, the thermal conductivity of the chuck plate is lower than that of aluminum nitride. Therefore, even if the wafer is always preheated during the bonding process of the wafer and the chip, the soldering material between the wafer and the chip can be prevented from being crushed. Therefore, a bonding failure may occur between the wafer and the chip.
  • the chuck plate is narrower than the gap between the vacuum holes located at the outermost position and the vacuum holes located inside the outermost position. Therefore, the wafer can be completely brought into close contact with the chuck structure at the edge portion of the chuck structure.
  • the chuck plate can be brought into close contact with the heating plate with a vacuum force. Therefore, the chuck plate can be fixed to the heating plate without a separate fastening member.
  • the chuck structure transfers heat generated in the heating plate to the wafer through a chuck plate.
  • the wafer can always be heated to a constant temperature by the heat transmitted by the chuck plate.
  • the chip can be effectively bonded to the wafer.
  • the bonding apparatus according to the present invention can stably bond the chip to the wafer using the chuck structure.
  • FIG. 1 is a cross-sectional view illustrating a chuck structure according to an embodiment of the present invention.
  • FIG. 2 is a plan view of the chuck structure shown in FIG.
  • Fig. 3 is a plan view for explaining the chuck plate shown in Fig. 1. Fig.
  • FIG. 4 is a bottom view for explaining the chuck plate shown in Fig.
  • FIG. 5 is an enlarged cross-sectional view of the portion A shown in Fig. 1 enlarged.
  • FIG. 6 is a schematic cross-sectional view illustrating a bonding apparatus according to an embodiment of the present invention.
  • FIG. 7 is a schematic cross-sectional view illustrating the bonding head shown in FIG.
  • FIG. 8 is a plan view for explaining the opening of the heating block in the bonding head shown in Fig.
  • FIG. 9 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention.
  • FIG. 10 is a plan view for explaining the opening of the heating block shown in Fig.
  • FIG. 11 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention.
  • a chuck plate according to the present invention is placed on a heating plate and supports a wafer on an upper surface and transfers heat generated in the heating plate to the wafer so as to heat the wafer, And a vacuum groove formed on the lower surface so as to be vacuum-adsorbed on the heating plate and defined by the upper surface of the heating plate to form a space.
  • FIG. 1 The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
  • Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged to illustrate the present invention in order to clarify the present invention.
  • first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
  • first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.
  • FIG. 1 is a cross-sectional view illustrating a chuck structure according to an embodiment of the present invention
  • FIG. 2 is a plan view of the chuck structure shown in FIG. 1
  • FIG. 3 is a plan view for explaining the chuck plate shown in FIG. 1
  • Fig. 4 is a bottom view for explaining the chuck plate shown in Fig. 1
  • Fig. 5 is an enlarged cross-sectional view showing an enlarged view of a portion A shown in Fig.
  • the chuck structure 100 supports the wafer 10. At this time, a circuit pattern may be formed on the wafer 10.
  • the chuck structure 100 includes a heating plate 110, a chuck plate 120, a guide ring 130, a clamp 140, a power cable 150 and a temperature sensor 160.
  • the heating plate 110 has a substantially disc shape and incorporates a heating element 112 that generates heat by a power source applied from the outside.
  • the heating element 112 may be provided on the inner surface of the heating plate 110 to have a predetermined pattern.
  • Examples of the heating element 112 include an electrode layer, a heating coil, and the like.
  • the heating plate 110 has a first vacuum line 114 and a second vacuum line 115 extending to the upper surface.
  • the first vacuum line 114 and the second vacuum line 115 may extend from the bottom surface or side of the heating plate 110 to the top surface, respectively.
  • the first vacuum line 114 and the second vacuum line 115 are not connected to each other.
  • the first vacuum line 114 is connected to a vacuum pump (not shown) and provides a vacuum force for adsorbing the wafer 10.
  • the second vacuum line 115 is connected to a vacuum pump (not shown) and provides a vacuum force to adsorb the chuck plate 120.
  • the heating plate 110 has alignment pins 116 on its upper surface.
  • the alignment pins 116 are for aligning the heating plate 110 and the chuck plate 120, and a plurality of alignment pins 116 may be provided.
  • the alignment pins 116 may be disposed on the upper surface edge of the heating plate 110.
  • the heating plate 110 has a groove 118 formed along the upper surface edge.
  • the groove 118 may be used to secure the guide ring 130.
  • the chuck plate 120 has a substantially disc shape and is placed on the heating plate 110.
  • the chuck plate 120 supports the wafer 10 on its upper surface.
  • the chuck plate 120 has a third vacuum line 122 connected to the first vacuum line 114 to adsorb the wafer 10.
  • the third vacuum line 122 has a vacuum groove 122a and a plurality of vacuum holes 122b.
  • the vacuum groove 122a is formed on the lower surface of the chuck plate 120.
  • the vacuum groove 122a may have a shape in which concentric grooves and radially extending grooves are combined with each other with respect to the center of the lower surface of the chuck plate 120, or may have a circular groove shape. At this time, the vacuum groove 122a does not extend to the lower edge of the chuck plate 120 to prevent leakage of the vacuum force.
  • the chuck plate 120 is placed on the heating plate 110 while the vacuum groove 122a is defined by the upper surface of the heating plate 110 to form a space. Further, the vacuum groove 122a is connected to the first vacuum line 114.
  • the vacuum holes 122b extend through the chuck plate 120 to the upper surface of the chuck plate 120 at the lower surface where the vacuum groove 122a is formed.
  • the vacuum holes 122b are arranged to be spaced apart from each other.
  • the vacuum holes 122b may be arranged concentrically or radially.
  • the third vacuum line 122 is connected to the first vacuum line 114 and can adsorb the wafer 10 by the vacuum force provided through the first vacuum line 114.
  • the gap between the vacuum holes 122b located at the outermost position in the chuck plate 120 may be arranged to be relatively narrower than the gap of the vacuum holes 122b located inside the outermost position.
  • the angle between the outermost vacuum holes 122b may be half the angle between the vacuum holes 122b located inside the outermost periphery.
  • the angle between the outermost vacuum holes 122b may be about 15 degrees, and the angle between the vacuum holes 122b located inside the outermost corner may be about 30 degrees.
  • the vacuum force through the vacuum hole 112b can be stably provided. Therefore, even at the edge of the chuck plate 120, the wafer 10 can be brought into close contact with the chuck plate 120, and the wafer 10 can be prevented from being lifted.
  • the chuck plate 120 has a vacuum groove 123 connected to the second vacuum line 115 on the lower surface so as to be vacuum-adsorbed on the heating plate 110.
  • the vacuum groove 123 is formed on the lower surface of the chuck plate 120.
  • the vacuum groove 123 may have a shape in which concentric grooves and radially extending grooves are combined with each other with respect to the center of the lower surface of the chuck plate 120, or may have a circular groove shape. At this time, the vacuum groove 123 does not extend to the lower edge of the chuck plate 120 to prevent leakage of the vacuum force.
  • the vacuum groove 123 may be formed so as not to be connected to the third vacuum line 122.
  • the chuck plate 120 is placed on the heating plate 110 and the vacuum groove 123 is defined by the upper surface of the heating plate 110 to form a space. Further, the vacuum groove 123 is connected to the second vacuum line 115.
  • the vacuum groove 123 is connected to the second vacuum line 115 and the chuck plate 120 can be tightly fixed on the heating plate 110 by the vacuum force provided through the second vacuum line 115 . Therefore, warping or bending of the chuck plate 120 can be minimized, and the wafer 10 on the chuck plate 120 can be supported flat.
  • the heating plate 110 and the chuck plate 120 can be held in close contact by the vacuum force provided through the second vacuum line 115 and the vacuum groove 123. Therefore, a separate fastening member for fastening the heating plate 110 and the chuck plate 120 is unnecessary.
  • the vacuum force provided through the first vacuum line 114 and the second vacuum line 115 is released to separate and replace the heating plate 110 and the chuck plate 120. Therefore, maintenance of the chuck structure 100 can be performed quickly.
  • the upper surface of the heating plate 110 and the lower surface of the chuck plate 120 each have a flatness exceeding about 10 ⁇ , there is a slight gap between the heating plate 110 and the chuck plate 120 .
  • the vacuum force can leak through the gap between the heating plate 110 and the chuck plate 120.
  • the upper surface of the heating plate 110 and the lower surface of the chuck plate 120 each have a flatness of about 10 ⁇ ⁇ or less, preferably 7 ⁇ ⁇ or less.
  • the heating plate 110 and the chuck plate 120 can be in close contact with each other, and the vacuum force can be prevented from leaking through the space between the heating plate 110 and the chuck plate 120.
  • the chuck plate 120 transfers the heat generated in the heating plate 110 to the wafer 10.
  • the wafer 10 may be maintained at a temperature of about 140 to 150 ° C. so that bonding of the chip (not shown) and the wafer 10 is easily performed.
  • the heating plate 110 may be made of a ceramic material.
  • An example of the ceramic material is aluminum nitride (AlN). Since the aluminum nitride has a high thermal conductivity, the heat generated by the heating element 112 can be uniformly transmitted to the heating plate 110. Further, the heating plate 110 can uniformly heat the wafer 10 by making the temperature distribution of the chuck plate 120 uniform.
  • the chuck plate 120 may be formed by adding titanium to a ceramic material.
  • the chuck plate 120 may be doped with titanium to the aluminum oxide (Al 2 O 3).
  • Al2O3 aluminum oxide
  • the thermal conductivity of the chuck plate 120 can be further reduced.
  • the amount of titanium is less than about 10 parts by weight with respect to 100 parts by weight of the aluminum oxide on the chuck plate 120, the increase in porosity of the chuck plate 120 is insignificant and the thermal conductivity of the chuck plate 120 is less than that of pure aluminum oxide ≪ / RTI >
  • the porosity of the chuck plate 120 is excessively increased and the thermal conductivity is greatly lowered. Then, the sintered density of the chuck plate 120 is reduced, so that the strength of the chuck plate 120 is lowered and the vacuum force can be lost through the pores of the chuck plate 120.
  • the chuck plate 120 When about 10 to 20 parts by weight of the titanium is added to 100 parts by weight of the aluminum oxide on the chuck plate 120, the chuck plate 120 is pushed through the pores of the chuck plate 120 so that the vacuum force is hardly lost. The porosity is increased and the thermal conductivity of the chuck plate 120 is also lowered.
  • the sintered density of the chuck plate 120 is about 3.8 g / cm 3, which is slightly lower than the sintered density of pure aluminum oxide of about 3.9 g / cm 3, so that the strength of the chuck plate 120 is not lowered.
  • the chuck plate 120 may be formed by adding about 10 to 20 parts by weight of titanium to 100 parts by weight of the aluminum oxide.
  • the thermal conductivity of the chuck plate 120 is less than about 5 W / m ⁇ k, the thermal conductivity of the chuck plate 120 is relatively low. Therefore, the heat generated from the heating plate 110 may not be sufficiently transferred to the wafer 10, or it may take a long time to transfer the heat generated from the heating plate 110 to the wafer 10. FIG. However, it is possible to prevent rapid heating of the chuck plate 120 even if the bonding head thermally compresses the wafer 10 and the chip at a high temperature of about 450 degrees for bonding the chip.
  • the thermal conductivity of the chuck plate 120 exceeds about 20 W / m ⁇ k, the thermal conductivity of the chuck plate 120 is relatively high. Accordingly, the heat generated in the heating plate 110 may be excessively transferred to the wafer 10 so that the soldering material between the wafer 10 and the chip may be crushed. In addition, when the bonding head thermally compresses the wafer 10 and the chip at a high temperature of about 450 degrees, the chuck plate 120 is relatively rapidly heated, so that the soldering material between the wafer 10 and the chip is more likely to be crushed Can be.
  • the chuck plate 120 can heat the heat generated by the thermal plate 110 to the wafer 10 appropriately so that the soldering material does not crumble .
  • the bonding head can prevent rapid heating of the chuck plate 120 even when the bonding head thermocompresses the wafer 10 and the chip at a high temperature of about 450 degrees for bonding the chip. Therefore, the soldering material between the wafer 10 and the chip can be prevented from being crushed.
  • the chuck plate 120 may be made of aluminum oxide (Al2O3) having a thermal conductivity lower than that of the aluminum nitride.
  • the chuck plate (120) has a receiving groove (124) for receiving the alignment pin (116).
  • the receiving groove 124 may be formed at a position corresponding to the alignment pin 116 of the heating plate 110.
  • the receiving groove 124 may also be disposed at the edge of the chuck plate 120.
  • the alignment pins 116 of the heating plate 110 can be inserted into the receiving grooves 124 of the chuck plate 120 when the chuck plate 120 is seated on the upper surface of the heating plate 110.
  • the heating plate 110 and the chuck plate 120 can be accurately aligned.
  • the aligning pin 116 is provided in the heating plate 110 and the receiving groove 124 is formed in the chuck plate 120, the receiving groove is formed in the heating plate 110, 120 may be provided with alignment pins.
  • the chuck plate 120 has a groove 126 formed along the top edge.
  • the grooves 126 may be used to secure the clamp 140.
  • the guide ring 130 hits the groove 118 formed along the upper edge of the heating plate 110 and guides the periphery of the heating plate 110.
  • the guide ring 130 has a first engaging jaw 132, and the guide ring 130 is mounted on the heating plate 110 by engaging the first engaging jaw 132 with the groove 118.
  • the upper surface of the guide ring 130 and the upper surface of the heating plate 110 may be located at the same height. In this case, the chuck plate 120 can be easily placed on the upper surface of the heating plate 110 with the guide ring 130 mounted on the heating plate 110.
  • the clamp 140 is fixed to the guide ring so as to cover the top edge of the chuck plate 120.
  • the clamp 140 can be fixed to the guide ring 130 by a fastening screw 142.
  • a plurality of clamps 140 may be provided to partially cover the top edge of the chuck plate 120.
  • the clamp 140 may have a generally ring shape and may entirely cover the top edge of the chuck plate 120.
  • the clamp 140 Since the clamp 140 is fixed to the guide ring 130 while covering the upper surface edge of the chuck plate 120, the clamp 140 can press the chuck plate 120 downward. Therefore, the clamp 140 can bring the chuck plate 120 into close contact with the heating plate 110. Therefore, it is possible to further prevent the vacuum force from leaking through the space between the heating plate 110 and the chuck plate 120.
  • the clamp 140 has a second latching jaw 144 and the second latching jaw 144 can be placed in the groove 126 of the chuck plate 120. Therefore, the upper surface of the clamp 140 and the upper surface of the chuck plate 120 can be positioned at the same height. Therefore, the wafer 10 can be reliably transferred to the upper surface of the chuck plate 120 without interference of the clamp 140 and can be seated.
  • the guide ring 130 and the clamp 140 may be made of a material having a thermal conductivity lower than that of the heating plate 110.
  • the guide ring 130 and the clamp 140 may be made of aluminum oxide (Al 2 O 3).
  • the guide ring 130 and the clamp 140 may be made of the same material as the chuck plate 120.
  • the guide ring 130 and the clamp 140 can prevent heat loss through the side surface of the heating plate 110 because the thermal conductivity of the guide ring 130 and the clamp 140 is lower than the thermal conductivity of the heating plate 110 have.
  • the power cable 150 extends to the inside of the heating plate 110 and is connected to the heating element 112.
  • the heating element 112 provides power for generating heat.
  • the temperature sensor 160 extends from the outside to the inside of the heating plate 110 and measures the temperature of the heating plate 110 heated by the heating element 112.
  • the temperature of the heating element 112 can be controlled using the temperature measured by the temperature sensor 160.
  • the temperature of the heating plate 110 can be controlled by controlling the temperature of the heating element 112.
  • thermocouple An example of the temperature sensor 160 is a thermocouple.
  • the chuck structure 100 transfers the heat generated in the heating plate 110 to the wafer 10 through the chuck plate 120.
  • the wafer 10 can always be heated to a constant temperature by the heat transmitted by the chuck plate 120. [ Therefore, the chip can be bonded to the wafer 10 effectively.
  • FIG. 6 is a schematic cross-sectional view illustrating a bonding apparatus according to an embodiment of the present invention.
  • the bonding apparatus 300 includes a chuck structure 100 and a bonding head 200.
  • the chuck structure 100 includes a heating plate 110, a chuck plate 120, a guide ring 130, a clamp 140, a power cable 150 and a temperature sensor 160, 1 to 5 are substantially the same as those described with reference to Figs.
  • the chuck structure 100 transfers the heat generated in the heating plate 110 to the wafer 10 through the chuck plate 120 so that the wafer 10 supported by the chuck structure 100 can always be heated to a constant temperature have. Therefore, the bonding head 200 can quickly bond the chip 20 to the wafer 10.
  • FIG. 7 is a schematic cross-sectional view for explaining the bonding head shown in FIG. 6, and FIG. 8 is a plan view for explaining the opening of the heating block in the bonding head shown in FIG.
  • the bonding head 200 is for transferring the chip 20 to the wafer 10 supported by the chuck structure 100 and bonding the wafer 20 to the wafer 10.
  • the base block 210 A heating block 220, and an adsorption plate 230.
  • the bonding head 200 may be provided so as to be able to horizontally move, vertically move, rotate, invert, and the like in order to transport the chip 20.
  • the bonding head 200 may be disposed such that the attraction plate 230 faces downward for bonding the chip 20 and the wafer 10.
  • the base block 210 includes a first block 212 and a second block 214.
  • the first block 212 is made of a metal material.
  • An example of the metal material may be a stainless steel material.
  • the second block 214 is provided on the first block 212.
  • the second block 214 may be made of a ceramic material having a thermal conductivity lower than that of the heating block 220.
  • An example of the ceramic material is aluminum oxide (Al2O3).
  • the second block 214 may reduce the transfer of heat generated in the heating block 220 to the first block 212 since the thermal conductivity of the second block 214 is lower than the thermal conductivity of the heating block 220 .
  • the base block 210 further includes a third block 216.
  • a third block 216 is provided between the first block 212 and the second block 214.
  • the third block 216 acts as a buffer block to reduce the transfer of the rows of the second block 214 to the first block 212.
  • the third block 216 may be made of a ceramic material, and examples of the ceramic material include aluminum oxide.
  • the heating block 220 is provided on the base block 210, specifically the second block 214.
  • the heating block 220 incorporates a heating element 222.
  • the heating element 222 may be made of a metal material.
  • the heating element 222 generates heat by a power source applied from the outside, and uses the heat to heat the chip 20 adsorbed on the adsorption plate 230.
  • the bumps of the chip 20 can be melted using the heat. For example, to dissolve the bumps in the chip 20, the heating element 222 may instantaneously heat the chip 20 to about 450 ° C.
  • the heating block 220 may be formed of a ceramic material having excellent insulation and thermal conductivity.
  • the heating block 220 may be an aluminum nitride (AlN) material.
  • AlN aluminum nitride
  • the thermal conductivity may be about 170 W / m ⁇ k or more.
  • the chip 20 can be quickly heated by using the heat generated by the heating element 222 because the heat block 220 has a high thermal conductivity.
  • the heating block 220 has a fourth vacuum line 224 and a fifth vacuum line 226 that extend to the top surface to provide vacuum force.
  • the fourth vacuum line 224 and the fifth vacuum line 226 are not connected to each other, and the vacuum force is provided, respectively.
  • the fourth vacuum line 224 passes above and below the edge portion of the heating block 220
  • the fifth vacuum line 226 passes above and below the central portion of the heating block 221.
  • the fourth vacuum line 224 may be connected to the groove 225 formed on the upper surface of the heating block 220 to have a predetermined length.
  • the vacuum force provided through the fourth vacuum line 224 can act in a wider range.
  • the fourth vacuum line 224 and the fifth vacuum line 226 may extend to the base block 210.
  • the fourth vacuum line 224 and the fifth vacuum line 226 may be provided only in the heating block 220 without extending to the base block 210.
  • the adsorption plate 230 is provided on the heating block 220.
  • the suction plate 230 is fixed to the upper surface of the heating block 220 by the vacuum force of the fourth vacuum line 224.
  • the suction plate 230 can be replaced by providing vacuum force to the fourth vacuum line 224 or releasing the vacuum force. Therefore, when the suction plate 230 is damaged or the size of the chip 20 is changed, only the suction plate 230 is selectively replaced, so that the suction plate 230 can be easily damaged or the size of the chip 20 can be easily changed.
  • the attraction plate 230 has a vacuum hole 232.
  • the vacuum hole 232 is connected to the fifth vacuum line 226 of the heating block 220. Accordingly, the chip 20 to be placed on the attracting plate 230 can be fixed with the vacuum force provided through the fifth vacuum line 226.
  • the bonding head 200 moves while the chip 20 is fixed by the attracting plate 230 so that the chip 20 can be stacked on the wafer 10. [ Further, the chip 20 can be pressed toward the wafer 10 by the attracting plate 230.
  • the bonding head 200 further includes a cooling line 240.
  • the cooling line 240 cools the heating block 220 to cool the chip 20. As the chip 20 is cooled, the bumps of the chip 20 are cooled to form the solder. At this time, the chip 20 can be cooled to about 100 ⁇ by the cooling line 240.
  • the cooling line 240 includes a first cooling line 242 and a second cooling line 244.
  • the first cooling line 242 extends from the base block 210 to the upper surface of the second block 214. And provides the cooling fluid to the heating block 220 through the first cooling line 242. Examples of the cooling fluid include air, gas and the like. The cooling fluid directly contacts the heating block 220 to cool the heating block 220.
  • the second cooling line 244 is provided inside the first block 212 in the base block 210 and cools the first block 212. As the first block 212 is cooled, the third block 216, the second block 214, and the heating block 220 may be cooled through heat conduction. Accordingly, the second cooling line 244 can cooperatively cool the heating block 220.
  • the first cooling line 242 is used to primarily cool the heating block 220 and the second cooling line 244 to assist cooling.
  • the cooling block 240 can be used to quickly cool the heating block 220. As the heating block 220 is cooled, the bumps of the chip 20 fixed to the attracting plate 230 can be rapidly cooled to form the solder
  • the heating block 220 has an opening 227 partially exposing the cooling line 240, specifically, the first cooling line 242.
  • the opening 227 may be a groove extending through the heating block 220 up and down to the side.
  • the opening 227 may selectively expose a portion of the plurality of first cooling lines 242 extending to the top surface of the base block 210 or may partially expose each of the first cooling lines 242 .
  • the openings 227 are disposed on one side of the heating block 220 when the openings 227 selectively expose a part of the plurality of first cooling lines 242, 230 are not uniform. Therefore, the quality of the solder formed on the chip 20 may be deteriorated.
  • the openings 227 may be arranged to be symmetrical with respect to the center of the heating block 220 when the openings 227 selectively expose a portion of the plurality of first cooling lines 242.
  • the quality of the solder formed on the chip 20 can be improved by making the temperature distribution of the heating block 220 and the attracting plate 230 relatively uniform.
  • a portion of the cooling fluid provided through the first cooling line 242 is provided to the heating block 220 to cool the heating block 220 and the remainder of the cooling fluid is supplied to the adsorption plate 230 through the opening 227 Thereby directly cooling the adsorption 230. That is, the cooling fluid provided through the first cooling line 242 can directly cool the adsorption plate 230 while cooling the adsorption plate 230 by cooling the heating block 220.
  • the cooling fluid provided through the first cooling line 242 may be discharged to the outside through the opening 227 after cooling the heating block 220 and the adsorption plate 230.
  • the bumps of the chip 20 fixed to the suction plate 230 can be cooled more quickly. Therefore, the bumps of the chip 20 melted by the heating block 220 can be rapidly cooled to form a solder of a good shape.
  • the opening 227 has a groove shape extending through the upper and lower sides of the heating block 220 and extending to the side, it is easy to form the opening 227 by processing the heating block 220.
  • the opening 227 has a groove shape extending through the heating block 220 and extending to the side surface, the suction plate 230 can be relatively exposed by the opening 227. Accordingly, the cooling fluid provided through the first cooling line 242 can be discharged to the outside through the opening 227, and the contact area with the attracting plate 230 can be increased. Therefore, the effect of directly cooling the adsorption plate 230 by the cooling fluid provided through the first cooling line 242 can be further enhanced.
  • the opening 227 exposes less than about 30% of the area of the first cooling line 242, the effect of direct cooling of the adsorption plate 230 by the cooling fluid provided through the first cooling line 242 is relatively low . Therefore, it is difficult for the cooling fluid provided through the first cooling line 242 to rapidly cool the bumps of the chip 20.
  • the effect of cooling fluid provided through the first cooling line 242 to cool the heating block 220 may be relatively reduced.
  • the heat of the heating block 220 can be transferred to the sucking plate 230 even if the cooling fluid provided through the first cooling line 242 directly cools the sucking plate 230 so that the bumps of the chip 20 are cooled rapidly it's difficult.
  • the area of the opening 227 increases, the area of the heating block 220 decreases, so that the amount of heat generated by the heating block 220 can be reduced. Therefore, it is difficult to rapidly dissolve the bumps of the chip 20.
  • the opening 227 may expose about 30% to 70% of the area of the first cooling line 242.
  • FIG. 9 is a sectional view for explaining an opening of a heating block according to another embodiment of the present invention
  • FIG. 10 is a plan view for explaining an opening of the heating block shown in FIG.
  • the heating block 220 has an opening 228 that partially exposes the first cooling line 242.
  • the opening 228 may be a through hole passing through the top and bottom.
  • the cooling fluid provided through the first cooling line 242 may be circulated along the first cooling line 242 or may be circulated between the heating block 220 and the attracting plate 230 or between the heating block 220 and the base block 210,
  • the opening 228 may expose about 30% to 70% of the area of the first cooling line 242.
  • FIG. 11 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention.
  • the heating block 220 has an opening 228 that partially exposes the first cooling line 242.
  • the opening 228 may be a through hole passing through the top and bottom.
  • connection groove 229 connected to the opening 228 may be further formed.
  • the connection groove 229 may be provided on at least one of the upper surface of the heating block 220 and the lower surface of the attracting plate 230.
  • connection groove 229 may be formed on the upper surface of the heating block 220 as shown in FIG.
  • connection groove 229 may be formed on the lower surface of the attraction plate 230.
  • connection groove 229 may be formed on the upper surface of the heating block 220 and the lower surface of the attraction plate 230, respectively.
  • the cooling fluid provided through the first cooling line 242 can be discharged to the outside through the connection groove 229.
  • connection groove 229 may be provided to be connected to the opening 228 on at least one of the lower surface of the heating block 220 and the upper surface of the base block 210.
  • the bonding head 200 may further include a temperature sensor.
  • the temperature sensor is provided inside the heating block 220 and senses the temperature of the heating block 220.
  • the ON / OFF of the power provided to the heating element 222 and the injection of the cooling fluid in the cooling line 240, the temperature of the refrigerant, and the circulation can be controlled according to the detection result of the temperature sensor.
  • the temperature sensor may be provided on the attracting plate 230.
  • the bonding head 200 heats the chip 20 with the heating block 220 to melt the bumps of the chip 20 in a state in which the chip 20 is transferred to the wafer 10, The chips 20 are bonded to the wafer 10 by cooling them.
  • the bonding head 200 rapidly heats and rapidly cools the chip 20, so that a good quality and good shape solder can be formed between the wafer 10 and the chip 20.
  • the bonding head 200 can quickly perform the heating and cooling of the chip 20, so that the efficiency of the process of bonding the chip 20 to the wafer 10 can be improved.
  • the bonding apparatus 300 fixes the wafer 10 using the chuck structure 100 and transfers the chip 10 to the wafer 10 while the chip 10 is heated to a predetermined temperature by the bonding head 100,
  • the chip 10 is bonded to the wafer 10 by melting the bump of the chip 10 by heating the chip 10 with the bonding head 100 and then cooling the chip 10. Therefore, it is possible to form a solder of good quality and good shape between the chip 10 and the wafer 10.
  • the heating and cooling of the chip 10 can be performed quickly, the efficiency of the process of bonding the chip 10 using the bonding apparatus 300 to the wafer 10 can be improved.
  • the bonding head 100 can transfer the chips 10 and stack them on the wafer 10. [ Accordingly, since the bonding apparatus 300 does not need to have a separate chip transfer means, the structure of the bonding apparatus 300 can be simplified.
  • the bonding apparatus having the chuck plate, the chuck structure having the chuck plate, and the chuck structure according to the present invention can bring the heating plate and the chuck plate into close contact with each other by vacuum force for adsorbing the wafer.
  • the heating plate and the chuck plate can be separated from each other by releasing only the vacuum force, so that maintenance or replacement of the chuck structure can be performed quickly.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Pencils And Projecting And Retracting Systems Therefor, And Multi-System Writing Instruments (AREA)
  • Adornments (AREA)

Abstract

Cette invention concerne une plaque de mandrin d'une structure de mandrin qui est disposée sur une plaque chauffante, supporte une tranche sur la surface supérieure de celle-ci, transfère, à la tranche, une chaleur générée par la plaque chauffante de telle sorte que la tranche est chauffée, et peut comprendre : des trous d'aspiration traversant la partie supérieure et la partie inférieure de celle-ci afin d'adsorber la tranche par une force d'aspiration; et une rainure d'aspiration, qui est disposée sur la surface inférieure de celle-ci de telle sorte que la plaque de mandrin est adsorbée par aspiration sur la plaque chauffante, et forme un espace en étant limitée par la surface supérieure de la plaque chauffante.
PCT/KR2018/006277 2017-11-09 2018-06-01 Plaque de mandrin, structure de mandrin ayant une plaque de mandrin, et dispositif de soudure ayant une structure de mandrin WO2019093609A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201880072948.4A CN111344855A (zh) 2017-11-09 2018-06-01 卡盘板、具有所述卡盘板的卡盘结构物及具有卡盘结构物的焊接装置
SG11202004112PA SG11202004112PA (en) 2017-11-09 2018-06-01 Chuck plate, chuck structure having chuck plate, and bonding device having chuck structure

Applications Claiming Priority (2)

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KR10-2017-0148537 2017-11-09
KR1020170148537A KR102454462B1 (ko) 2017-11-09 2017-11-09 척 플레이트, 상기 척 플레이트를 갖는 척 구조물 및 척 구조물을 갖는 본딩 장치

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CN (1) CN111344855A (fr)
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CN115332129A (zh) * 2022-10-17 2022-11-11 宁波润华全芯微电子设备有限公司 一种晶圆增粘装置

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CN112563185B (zh) * 2021-02-20 2021-06-08 北京中硅泰克精密技术有限公司 静电卡盘及半导体加工设备
CN116666321B (zh) * 2023-07-25 2023-10-27 天津中科晶禾电子科技有限责任公司 一种温度保持装置

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SG11202004112PA (en) 2020-06-29
CN111344855A (zh) 2020-06-26
TWI796335B (zh) 2023-03-21
TW201919146A (zh) 2019-05-16
KR102454462B1 (ko) 2022-10-14

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