WO2020032511A1 - Système de transfert de masque et procédé de fabrication de masque ayant un cadre intégré - Google Patents

Système de transfert de masque et procédé de fabrication de masque ayant un cadre intégré Download PDF

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Publication number
WO2020032511A1
WO2020032511A1 PCT/KR2019/009742 KR2019009742W WO2020032511A1 WO 2020032511 A1 WO2020032511 A1 WO 2020032511A1 KR 2019009742 W KR2019009742 W KR 2019009742W WO 2020032511 A1 WO2020032511 A1 WO 2020032511A1
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Prior art keywords
mask
frame
loading
temperature
cell
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PCT/KR2019/009742
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English (en)
Korean (ko)
Inventor
이병일
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주식회사 티지오테크
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Publication of WO2020032511A1 publication Critical patent/WO2020032511A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736—Loading to or unloading from a conveyor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • the present invention relates to a transfer system of a mask and a method of manufacturing a frame-integrated mask. More specifically, it is possible to make the mask integral with the frame, to improve the adhesion between the mask and the frame, and to clarify the alignment between the masks. It relates to a manufacturing method.
  • the electroplating method is a method of immersing a positive electrode and a negative electrode in an electrolyte and applying a power to electrodeposit a thin metal plate on the surface of the negative electrode, so that ultra-thin plate can be manufactured and mass production can be expected.
  • a fine metal mask (FMM) method of depositing an organic material at a desired position by closely attaching a thin metal mask to a substrate is mainly used.
  • the mask is manufactured in the form of a stick, a plate, and the like, and then the mask is welded and fixed to the OLED pixel deposition frame.
  • Each mask may include a plurality of cells corresponding to one display.
  • several masks may be fixed to the OLED pixel deposition frame. In the process of fixing to the frame, each mask is tensioned to be flat. Adjusting the tension to make the entire part of the mask flat is a very difficult task.
  • QHD image quality is 500 ⁇ 600 pixel per inch (PPI), and the pixel size is about 30 ⁇ 50 ⁇ m, and 4K UHD, 8K UHD high definition is higher than 860 PPI, ⁇ 1600 PPI, etc. It has a resolution of.
  • the alignment error between the cells must be reduced to several micrometers, and the error beyond this can lead to product failure, resulting in very low yield. Therefore, there is a need for development of a technique for preventing deformation, such as knocking or twisting of a mask and making alignment clear, a technique for fixing a mask to a frame, and the like.
  • the present invention has been made to solve the above-mentioned problems of the prior art, the mask transfer system that can prevent the deformation of the mask when the mask is bonded to the frame and improve the adhesion between the mask and the frame To provide that purpose.
  • an object of the present invention is to provide a mask transfer system capable of unfolding the mask flat and stable transfer.
  • an object of this invention is to provide the manufacturing method of the frame-integrated mask which markedly reduced manufacturing time and raised the yield significantly.
  • the above object of the present invention is an OLED pixel forming mask transfer system that loads and transfers a mask in a process of integrally forming a mask and a frame supporting the mask, wherein the mask loading capable of absorbing and loading one side of the mask part; And a conveying portion for moving and flipping the mask loading portion.
  • the mask loading portion may have a flat plate shape, and a plurality of vacuum holes may be formed on one surface corresponding to the mask.
  • a depression is formed at an edge of the mask loading portion, the mask loading portion is formed to have a larger area than the mask, and when the mask is loaded into the mask loading portion, at least an edge of the mask may protrude outside the depression.
  • the mask loading unit may include a heating unit.
  • a laser through hole may be formed in a portion of the mask loading portion corresponding to the welding portion of the mask.
  • the transfer part may be connected to the other surface opposite to one surface of the mask loading part in contact with the mask, and the transfer part may move the mask loading part in the X, Y, Z, and ⁇ axes, and flip the mask to face downward.
  • a method of manufacturing a frame-integrated mask integrally formed with at least one mask and a frame for supporting the mask comprising: (a) providing a frame having at least one mask cell area; (b) absorbing and loading one surface of the mask into the mask loading unit; (c) loading the mask loading portion on the frame to correspond to the mask cell area of the frame; And (d) irradiating the welded portion of the mask with a laser to adhere the mask to the frame.
  • the mask loading portion has a flat plate shape, and a plurality of vacuum holes are formed on one surface corresponding to the mask, and in step (b), the mask loading portion is applied by applying pressure to one surface of the mask in the plurality of vacuum holes. It can adsorb to the phase.
  • Step (b) may include: (b1) adsorbing at least two sides of the mask to the vacuum transfer unit; And (b2) moving the vacuum transfer unit to absorb and load one surface of the mask onto the mask loading unit.
  • the vacuum transfer unit may pull out the adsorbed mask to the outside to flatten the mask.
  • Step (c) includes: (c1) flipping the mask loading portion so that the mask faces downward; (c2) the transfer unit aligning the mask on the cell area of the frame by controlling the position of the mask loading unit; And (c3) loading the mask loading unit on the frame to correspond to the mask cell area of the frame.
  • the temperature of the process region containing the frame is raised to the first temperature, and after the mask is adhered to the frame, the temperature of the process region containing the frame is changed to the second temperature. Can be lowered.
  • the first temperature is equal to or higher than the OLED pixel deposition process temperature
  • the second temperature is at least lower than the first temperature
  • the first temperature is any one of 25 ° C. to 60 ° C.
  • the second temperature is The temperature of any one of 20 ° C to 30 ° C lower than one temperature
  • the OLED pixel deposition process temperature may be any one of 25 ° C to 45 ° C.
  • the mask loading part may include a heating part, and may maintain the mask at a temperature of 3 ° C. to 10 ° C. higher than the first temperature between steps (b) and (c).
  • the mask can be unfolded flat and transferred to the stable tablet.
  • the mask and the frame can form an integrated structure.
  • 1 is a schematic view showing a conventional mask for OLED pixel deposition.
  • FIG. 2 is a schematic diagram illustrating a process of adhering a conventional mask to a frame.
  • 3 is a schematic view showing that alignment errors between cells occur in the process of tensioning a conventional mask.
  • FIG. 4 is a front and side cross-sectional view showing a frame-integrated mask according to an embodiment of the present invention.
  • FIG. 5 is a front and side cross-sectional view showing a frame according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram illustrating a manufacturing process of a frame according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram illustrating a manufacturing process of a frame according to another embodiment of the present invention.
  • FIG. 8 is a schematic diagram illustrating components of a transfer system of a mask according to an embodiment of the present invention.
  • FIG. 9 is a schematic diagram illustrating a state in which a vacuum transfer unit adsorbs a mask according to an embodiment of the present invention.
  • FIG. 10 is a schematic view showing an operation process of the mask transfer system according to an embodiment of the present invention.
  • FIG. 11 is a schematic diagram illustrating a state in which a tray is loaded onto a frame according to an embodiment of the present invention so that a mask corresponds to a cell area of the frame.
  • FIG. 12 is a schematic diagram illustrating a process of sequentially bonding a mask to a cell region according to an embodiment of the present invention.
  • FIG. 13 is a schematic diagram illustrating a process of lowering a temperature of a process region after attaching a mask to a cell region of a frame according to an embodiment of the present invention.
  • FIG. 14 is a schematic diagram illustrating an OLED pixel deposition apparatus using an integrated frame mask according to an embodiment of the present invention.
  • FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition 10.
  • the mask 10 may be manufactured in a stick type or a plate type.
  • the mask 10 shown in FIG. 1A is a stick type mask, and both sides of the stick may be welded and fixed to the OLED pixel deposition frame.
  • the mask 100 illustrated in FIG. 1B is a plate-type mask and may be used in a large area pixel forming process.
  • a plurality of display cells C are provided in the body (or mask film 11) of the mask 10.
  • One cell C corresponds to one display such as a smartphone.
  • a pixel pattern P is formed to correspond to each pixel of the display.
  • the pixel pattern P is formed in the cell C to have a resolution of 70 ⁇ 140. That is, a large number of pixel patterns P may be clustered to form one cell C, and a plurality of cells C may be formed in the mask 10.
  • FIG. 2 is a schematic diagram illustrating a process of adhering the mask 10 to the frame 20.
  • 3 is a schematic view showing that alignment errors between cells occur in the process of tensioning the mask 10 (F1 to F2).
  • a stick mask 10 having six cells C: C1 to C6 shown in FIG. 1A will be described as an example.
  • the stick mask 10 should be flattened.
  • the stick mask 10 is unfolded as the tensile force F1 to F2 is applied in the major axis direction of the stick mask 10 and pulled.
  • the stick mask 10 is loaded onto the frame 20 having a rectangular frame shape.
  • the cells C1 to C6 of the stick mask 10 are positioned in the empty area of the frame 20 of the frame 20.
  • the frame 20 may be large enough so that the cells C1 to C6 of one stick mask 10 are located in an empty area inside the frame, and the cells C1 to C6 of the plurality of stick masks 10 are framed. It may also be large enough to fit inside the empty area.
  • the distances D1 to D1 ′′ and D2 to D2 ′′ may be different from each other or the patterns P may be skewed between the patterns P of the cells C1 to C3.
  • the stick mask 10 is a large area including a plurality of (eg, six) cells C1 to C6 and has a very thin thickness on the order of tens of micrometers, and thus is easily struck or warped by a load.
  • the minute error of the tensile force may cause an error in the extent that the cells (C1 ⁇ C3) of the stick mask 10 is extended or unfolded, and thus the distance (D1) between the mask pattern (P) ⁇ D1 ", D2-D2") cause a problem that becomes different.
  • the alignment error does not exceed 3 micrometers. It is preferable not to.
  • This alignment error between adjacent cells is referred to as pixel position accuracy (PPA).
  • the tensile force (F1 ⁇ F2) applied to the stick mask 10 may act inversely to the frame 20. That is, after the stick mask 10 is stretched by the tension force (F1 ⁇ F2) is connected to the frame 20 can be applied to the tension (tension) to the frame 20.
  • the tension may not be large and may not have a large influence on the frame 20.
  • the tension may slightly change the frame 20. Thus, a problem may arise in that the alignment state is changed between the plurality of cells C to C6.
  • the present invention proposes a frame 200 and a frame integrated mask that allow the mask 100 to form an integrated structure with the frame 200.
  • the mask 100 integrally formed in the frame 200 may be prevented from being deformed or warped, and may be clearly aligned with the frame 200. Since no tensile force is applied to the mask 100 when the mask 100 is connected to the frame 200, the tension may not be applied to the frame 200 after the mask 100 is connected to the frame 200. .
  • the manufacturing time for integrally connecting the mask 100 to the frame 200 may be significantly reduced, and the yield may be significantly increased.
  • FIG. 4 is a front view (FIG. 4 (a)) and a side cross-sectional view (FIG. 4 (b)) showing a frame-integrated mask according to an embodiment of the present invention
  • Figure 5 is according to an embodiment of the present invention It is a front view (FIG. 5 (a)) and a side cross-sectional view (FIG. 5 (b)) which show a frame.
  • the frame integrated mask may include a plurality of masks 100 and one frame 200.
  • each of the plurality of masks 100 is bonded to the frame 200.
  • the rectangular mask 100 will be described as an example, but the masks 100 may be in the form of a stick mask having protrusions clamped at both sides before being bonded to the frame 200, and the frame 200. The protrusions can be removed after they have been glued to them.
  • a plurality of mask patterns P may be formed in each mask 100, and one cell C may be formed in one mask 100.
  • One mask cell C may correspond to one display such as a smartphone.
  • the mask 100 may be formed by electroforming.
  • the mask 100 may be an invar having a thermal expansion coefficient of about 1.0 ⁇ 10 ⁇ 6 / ° C. and a super invar material having about 1.0 ⁇ 10 ⁇ 7 / ° C. Since the mask 100 of this material has a very low coefficient of thermal expansion, there is little possibility that the pattern shape of the mask is deformed by thermal energy, and thus, the mask 100 may be used as a fine metal mask (FMM) or a shadow mask in high-resolution OLED manufacturing.
  • FMM fine metal mask
  • the mask 100 has a slightly larger thermal expansion coefficient than that of nickel (Ni) and nickel-cobalt (Ni-Co). It may be a material such as).
  • the mask may have a thickness of about 2 ⁇ m to 50 ⁇ m.
  • the frame 200 is formed to bond the plurality of masks 100.
  • the frame 200 may include various edges formed in a first direction (eg, a horizontal direction) and a second direction (eg, a vertical direction) including an outermost edge. These various corners may define the area to which the mask 100 is to be bonded on the frame 200.
  • the frame 200 may include an edge frame portion 210 having a substantially rectangular shape and a rectangular frame shape.
  • the inside of the frame frame 210 may be hollow. That is, the frame frame 210 may include a hollow region (R).
  • the frame 200 may be made of a metal material such as Invar, Super Invar, Aluminum, Titanium, etc., and may be made of Inbar, Super Invar, Nickel, or Nickel-Cobalt having the same thermal expansion coefficient as a mask in consideration of thermal deformation.
  • the materials may be applied to both the edge frame portion 210 and the mask cell sheet portion 220 which are components of the frame 200.
  • the frame 200 may include a plurality of mask cell regions CR and may include a mask cell sheet portion 220 connected to the edge frame portion 210.
  • the mask cell sheet part 220 may be formed by electroplating or may be formed using another film forming process.
  • the mask cell sheet part 220 may be connected to the edge frame part 210 after forming a plurality of mask cell areas CR through laser scribing, etching, etc. on a flat sheet.
  • the mask cell sheet unit 220 may form a plurality of mask cell regions CR through laser scribing, etching, etc. after connecting the planar sheet to the edge frame unit 210.
  • a plurality of mask cell regions CR are first formed in the mask cell sheet 220 and then mainly connected to the edge frame portion 210.
  • the mask cell sheet unit 220 may include at least one of the edge sheet unit 221 and the first and second grid sheet units 223 and 225.
  • the edge sheet portion 221 and the first and second grid sheet portions 223 and 225 refer to respective portions partitioned from the same sheet, which are integrally formed with each other.
  • the edge sheet portion 221 may be substantially connected to the edge frame portion 210. Accordingly, the edge sheet part 221 may have a substantially rectangular shape and a rectangular frame shape corresponding to the edge frame part 210.
  • first grid sheet part 223 may extend in a first direction (horizontal direction).
  • the first grid sheet part 223 may be formed in a straight line shape and both ends thereof may be connected to the edge sheet part 221.
  • each of the first grid sheet portions 223 may be equally spaced apart.
  • the second grid sheet part 225 may be formed to extend in a second direction (vertical direction).
  • the second grid sheet part 225 may be formed in a straight line shape and both ends thereof may be connected to the edge sheet part 221.
  • the first grid sheet part 223 and the second grid sheet part 225 may vertically cross each other.
  • each of the second grid sheet portions 225 may be equally spaced apart.
  • the spacing between the first grid sheet portions 223 and the spacing between the second grid sheet portions 225 may be the same or different according to the size of the mask cell C.
  • the first grid sheet portion 223 and the second grid sheet portion 225 have a thin thickness in the form of a thin film, but the shape of the cross section perpendicular to the longitudinal direction may be a rectangle, a square shape such as a parallelogram, a triangular shape, or the like. The edges, edges and corners may be partially rounded.
  • the cross-sectional shape is adjustable in the process of laser scribing, etching and the like.
  • the thickness of the edge frame portion 210 may be thicker than the thickness of the mask cell sheet portion 220.
  • the edge frame part 210 may be formed to a thickness of several mm to several cm because it is responsible for the overall rigidity of the frame 200.
  • the mask cell sheet portion 220 In the case of the mask cell sheet portion 220, a process of manufacturing a substantially thick sheet is difficult, and if it is too thick, a path through which the organic source 600 (see FIG. 14) passes through the mask 100 in the OLED pixel deposition process is used. This can cause problems. On the contrary, if the thickness is too thin, it may be difficult to secure rigidity enough to support the mask 100. Accordingly, the mask cell sheet portion 220 is thinner than the thickness of the edge frame portion 210, but preferably thicker than the mask 100.
  • the mask cell sheet part 220 may have a thickness of about 0.1 mm to about 1 mm.
  • the widths of the first and second grid sheet parts 223 and 225 may be formed to about 1 to 5 mm.
  • a plurality of mask cell areas CR: CR11 to CR56 may be provided except for an area occupied by the edge sheet part 221 and the first and second grid sheet parts 223 and 225 in the planar sheet.
  • the mask cell region CR is a region occupied by the edge sheet portion 221 and the first and second grid sheet portions 223 and 225 in the hollow region R of the edge frame portion 210. Except for, it may mean an empty area.
  • the mask C may be used as a passage through which the pixels of the OLED are deposited through the mask pattern P.
  • FIG. As described above, one mask cell C corresponds to one display such as a smartphone.
  • Mask patterns P that form one cell C may be formed in one mask 100.
  • one mask 100 may include a plurality of cells C and each cell C may correspond to each cell region CR of the frame 200. It is necessary to avoid the large area mask 100, and the small area mask 100 provided with one cell C is preferable.
  • one mask 100 having a plurality of cells C may correspond to one cell region CR of the frame 200. In this case, for the sake of clear alignment, it may be considered to correspond to the mask 100 having a few cells C of about 2-3.
  • the frame 200 may include a plurality of mask cell regions CR, and each mask 100 may be bonded such that one mask cell C corresponds to the mask cell region CR.
  • Each mask 100 may include a mask cell C on which a plurality of mask patterns P are formed and a dummy (corresponding to a portion of the mask film 110 except for the cell C) around the mask cell C. have.
  • the dummy may include only the mask film 110 or the mask film 110 having a predetermined dummy pattern having a similar shape to the mask pattern P.
  • the mask cell C may correspond to the mask cell region CR of the frame 200, and part or all of the dummy may be adhered to the frame 200 (mask cell sheet portion 220). Accordingly, the mask 100 and the frame 200 may form an integrated structure.
  • the frame is not manufactured by adhering the mask cell sheet portion 220 to the edge frame portion 210, the frame frame portion 210 in the hollow region (R) portion of the edge frame portion 210 ), A frame in which a grid frame (corresponding to the grid sheet portions 223 and 225) which is integral with the frame) is formed immediately.
  • the frame of this type also includes at least one mask cell region CR, and the mask integrated region may be manufactured by corresponding the mask 100 to the mask cell region CR.
  • FIGS. 4 and 5 may be provided.
  • 6 is a schematic diagram illustrating a manufacturing process of the frame 200 according to an embodiment of the present invention.
  • an edge frame unit 210 is provided.
  • the edge frame portion 210 may have a rectangular frame shape including the hollow area R.
  • a mask cell sheet part 220 is manufactured.
  • the mask cell sheet unit 220 may be manufactured by fabricating a flat sheet using pre-plating or other film forming process, and then removing the mask cell region CR through laser scribing or etching. have.
  • a description is given taking an example of forming a 6 ⁇ 5 mask cell region (CR: CR11 to CR56).
  • the mask cell sheet part 220 may correspond to the edge frame part 210.
  • all the sides of the mask cell sheet part 220 are stretched (F1 to F4), and the edge sheet part 221 is connected to the edge frame part 210 while the mask cell sheet part 220 is flattened. It can respond.
  • the mask cell sheet part 220 may be grasped and tensioned at various points (for example, 1 to 3 points in FIG. 6B).
  • the mask cell sheet portion 220 may be stretched (F1, F2) not in all sides but in some lateral direction.
  • the edge sheet part 221 of the mask cell sheet part 220 may be welded (W) and bonded. It is preferable to weld (W) all sides so that the mask cell sheet portion 220 can be firmly adhered to the edge frame portion 220. Welding (W) should be performed as close as possible to the edge of the edge frame portion 210 as much as possible to reduce the excited space between the edge frame portion 210 and the mask cell sheet portion 220 as much as possible to increase the adhesion.
  • the welding (W) part may be generated in a line or spot shape, and may have the same material as the mask cell sheet part 220 and integrate the edge frame part 210 and the mask cell sheet part 220. It can be a medium to connect to.
  • FIG. 7 is a schematic diagram illustrating a manufacturing process of a frame according to another embodiment of the present invention.
  • the mask cell sheet part 220 having the mask cell area CR is first manufactured and adhered to the edge frame part 210.
  • the embodiment of FIG. After adhesion to 210, the mask cell region CR is formed.
  • the edge frame part 210 including the hollow area R is provided.
  • the edge frame portion 210 may correspond to a planar sheet (the plane mask cell sheet portion 220 ′).
  • the mask cell sheet portion 220 ′ is in a planar state in which the mask cell region CR is not yet formed.
  • all sides of the mask cell sheet part 220 ' may be stretched (F1 to F4) to correspond to the edge frame part 210 in a state where the mask cell sheet part 220' is flattened.
  • the mask cell sheet portion 220 ' may be grasped and tensioned at several points (for example, 1 to 3 points in FIG. 7A).
  • the mask cell sheet portion 220 ' may be stretched (F1, F2) not in all sides but in some lateral direction.
  • the edge portion of the mask cell sheet portion 220' may be welded (W) and bonded. It is preferable to weld (W) all sides so that the mask cell sheet portion 220 ′ can be firmly adhered to the edge frame portion 220. Welding (W) should be performed as close as possible to the edge of the edge frame portion 210 as much as possible to reduce the excited space between the edge frame portion 210 and the mask cell sheet portion 220 'as much as possible to increase the adhesion.
  • the welded W portion may be formed in a line or spot shape, and may have the same material as that of the mask cell sheet portion 220 ′ and have an edge frame portion 210 and a mask cell sheet portion 220 ′. It can be a medium to connect the integrally.
  • a mask cell region CR is formed in a planar sheet (planar mask cell sheet portion 220 ′).
  • the mask cell region CR may be formed by removing the sheet of the mask cell region CR through laser scribing or etching.
  • a description is given taking an example of forming a 6 ⁇ 5 mask cell region (CR: CR11 to CR56).
  • a portion welded to the edge frame portion 210 becomes the edge sheet portion 221, and five first grid sheet portions 223 and four second grids are formed.
  • the mask cell sheet part 220 having the sheet part 225 may be configured.
  • FIG. 8 is a schematic diagram illustrating components of a transfer system of a mask 100 according to an embodiment of the present invention.
  • 8A is a plan view and a side cross-sectional view showing a mask 100
  • FIG. 8B is a plan view and a side cross-sectional view showing a tray 50
  • FIG. 8C is a mask loading portion 90 It is a flat sectional drawing and a side sectional drawing which show.
  • the tray 50 and the mask loading unit 90 which are transfer systems of the mask 100, support a system for transferring the mask 100 to the frame 200 before the mask 100 is attached to the frame 200. Can mean.
  • a mask 100 having a plurality of mask patterns P may be provided.
  • the mask 100 may include a mask cell C on which a plurality of mask patterns P are formed and a dummy DM around the mask cell C.
  • FIG. The dummy DM may correspond to a portion of the mask layer 110 except for the cell C, and may include only the mask layer 110 or may have a predetermined dummy pattern having a shape similar to that of the mask pattern P. It may include.
  • a part or all of the dummy DM may be attached to the frame 200 (the mask cell sheet 220) in correspondence with the edge of the mask 100. It is possible to manufacture a mask 100 of the Invar, super Invar material by electroplating method.
  • the mother plate used as a cathode in electroplating is made of a conductive material.
  • a conductive material in the case of metal, metal oxides may be generated on the surface, impurities may be introduced during the metal manufacturing process, and in the case of the polycrystalline silicon substrate, inclusions or grain boundaries may exist, and the conductive polymer may be present.
  • a base material it is highly likely to contain an impurity, and strength. Acid resistance may be weak.
  • defects Elements that interfere with the uniform formation of an electric field on the surface of the substrate (or negative electrode body), such as metal oxides, impurities, inclusions, grain boundaries, etc., are referred to as "defects.” Due to the defect, a uniform electric field may not be applied to the negative electrode body of the above-described material, so that a part of the plating film (mask 100) may be unevenly formed.
  • Non-uniformity of the plating film and the plating film pattern may adversely affect the formation of the pixel in implementing a UHD-class or higher definition pixel.
  • QHD image quality is 500 ⁇ 600 pixel per inch (PPI), and the size of pixel is about 30 ⁇ 50 ⁇ m.
  • PPI pixel per inch
  • 4K UHD and 8K UHD high definition it is higher than 860 PPI and ⁇ 1600 PPI.
  • the micro display applied directly to the VR device, or the micro display used in the VR device aims at an ultra-high quality of about 2,000 PPI or more, and the size of the pixel reaches about 5 to 10 ⁇ m.
  • the pattern width of the FMM and shadow mask applied to this may be formed in a size of several to several tens of micrometers, preferably smaller than 30 micrometers. to be.
  • an additional process for removing metal oxides, impurities, and the like may be performed to remove the defects in the cathode material of the material described above, and another defect such as etching of the anode material may be caused in this process. have.
  • the present invention can use a mother plate (or negative electrode body) of a single crystal material.
  • a mother plate or negative electrode body of a single crystal material.
  • it is preferable that it is a single crystal silicon material.
  • a high concentration doping of 10 19 / cm 3 or more may be performed on the single crystal silicon base plate. Doping may be performed on the entirety of the mother plate, or only on the surface portion of the mother plate.
  • the single crystal material is a metal such as Ti, Cu, Ag, carbon-based materials such as semiconductors such as GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge, graphite, graphene , CH 3 NH 3 PbCl 3, CH 3 NH 3 PbBr 3, CH 3 NH 3 PbI 3, SrTiO 3 , etc. page containing the perovskite (perovskite) superconductor single crystalline ceramic, aircraft single crystal second heat-resistant alloy for components for such structures And the like can be used.
  • Metal and carbon-based materials are basically conductive materials. In the case of a semiconductor material, high concentration doping of 1019 or more may be performed to have conductivity. In the case of other materials, the conductivity may be formed by performing doping or forming oxygen vacancies. Doping may be performed on the entirety of the mother plate, or only on the surface portion of the mother plate.
  • a uniform plating film (mask 100) can be generated due to the formation of a uniform electric field on the entire surface during electroplating.
  • the frame-integrated masks 100 and 200 manufactured through the uniform plating layer may further improve the image quality level of the OLED pixel.
  • process costs are reduced and productivity is improved.
  • the insulating portion can be formed only by oxidizing and nitriding the surface of the mother plate as needed. have.
  • the insulating portion may be formed using a photoresist. Electrodeposition of the plating film (mask 100) is prevented in the part in which the insulation part was formed, and a pattern (mask pattern P) is formed in a plating film.
  • the material of the mother plate of the present invention is not limited to the above-described single crystal material as long as it is within the range for reducing the defect of the negative electrode body.
  • the width of the mask pattern P may be smaller than 40 ⁇ m, and the thickness of the mask 100 may be about 2 to 50 ⁇ m. Since the frame 200 includes a plurality of mask cell regions CR11 to CR56, the mask 100 having mask cells C11 to C56 corresponding to the respective mask cell regions CR11 to CR56. ) Can also be provided in plurality.
  • a mask loading unit 90 may be provided.
  • the mask loading unit 90 may flatten the manufactured mask 100 to provide a space for loading the mask 100 before moving to the frame 200.
  • the mask loading unit 90 may have a flat plate shape so that the mask 100 may be loaded flat.
  • the size of the mask loading unit 90 may be a flat plate shape larger than that of the mask 100 so that the mask 100 may be loaded flat throughout.
  • the mask loading unit 90 may absorb one surface of the mask 100 so that the mask 100 may remain flat without wrinkles.
  • a plurality of vacuum holes VH may be formed on one surface of the mask loading unit 90 corresponding to the mask 100 so that the mask loading unit 90 may absorb one surface of the mask 100. have.
  • the mask loading unit 90 may be connected to an external pumping means (not shown) to pump air in the mask loading unit 90 to transmit a suction pressure to the vacuum hole VH.
  • the mask 100 may be sucked to the mask loading unit 90 by the suction pressure of the plurality of vacuum holes VH.
  • the mask loading part 90 may have a depression 91 formed at a corner thereof. Considering the mask loading unit 90 having a rectangular shape, recesses 91 may be formed at four corners, respectively.
  • a part of the mask 100 may protrude and be exposed to the outside of the recess 91. Accordingly, the mask 100 may be flattened using the protruding and exposed portions, or may be gripped by the grip means (not shown).
  • the mask loading unit 90 may be opaque to the laser (L) light. Accordingly, in the mask loading part 90 of the present invention, the laser passage hole 92 is formed so that the laser L irradiated from the upper part of the mask loading part 90 can reach the welding part of the mask 100. Can be.
  • the laser through hole 93 may be formed in the mask loading part 90 to correspond to the position and the number of welding parts. Since a plurality of welding parts are disposed along a predetermined interval in the edge or dummy DM portion of the mask 100, a plurality of laser passing holes 93 may also be formed along the predetermined interval to correspond thereto. For example, since a plurality of welds are disposed at both sides (left / right) of the mask 100 at a portion of the dummy DM along a predetermined interval, the laser passing holes 93 may also be disposed on both sides (left / right) of the mask loading unit 90. A plurality may be formed along a predetermined interval.
  • the laser through hole 93 does not necessarily correspond to the position and the number of welds.
  • welding may be performed by irradiating the laser L only to a part of the laser passing holes 93.
  • some of the laser passing holes 93 that do not correspond to the welding part may be used in place of a vacuum hole, which is a passage for applying vacuum suction pressure to the mask 100 in contact with one surface of the mask loading part 90.
  • some of the laser passing holes 93 that do not correspond to the welding part may be used instead of the alignment mark when the mask 100 and the mask loading part 90 are aligned. If the material of the mask loading part 90 is transparent to the laser light, the laser passage hole 93 may not be formed.
  • the mask loading unit 90 may be connected to the transfer unit 92.
  • the transfer part 93 may be connected to the other surface opposite to one surface of the mask loading part 90 in contact with the mask 100.
  • the transfer unit 92 may be connected to the lower surface of the mask loading unit 90.
  • the transfer unit 92 may be connected to a moving means (not shown) such as a rail, a belt, and the like to move in the X, Y, Z, and ⁇ axes.
  • a rotating shaft for flipping the mask loading unit 90 may be further connected to the transfer unit 92.
  • the housing of the mask loading unit 90 and the transfer unit 92 are in communication with each other, and the transfer unit 92 is connected to an external pumping means (not shown) to apply a suction pressure to the mask loading unit 90 to form a vacuum hole vh. It is also possible to deliver the pressure of absorption.
  • FIG 9 is a schematic view showing a state in which the vacuum transfer unit 60 adsorbs the mask 100 according to an embodiment of the present invention.
  • the vacuum transfer unit 60 may adsorb the side of the mask 100.
  • the vacuum transfer unit 60 may flatten the mask 100 by pulling the mask 100 outward after pulling the mask 100.
  • the manufactured mask 100 may be loaded and bonded onto the frame 200 in a flat and flat state.
  • the mask 100 is a thin film having a thickness of about 2 ⁇ m ⁇ 50 ⁇ m, wrinkles may occur even if a little force is applied, so care must be taken for its handling.
  • the mask 100 since the plurality of fine mask patterns P are formed in the mask 100, the mask 100 must be flattened without wrinkles so that the alignment of the mask patterns P is not misaligned. If both sides of the mask 100 are gripped by the gripper to move the mask 100 in the unfolded state, damage may occur to the mask 100, and since both sides of the mask 100 are gripped, the mask 100 may not be easily loaded on the frame 200. In addition, it is also very difficult to grab the mask 100 with the gripper and to move it flat without any misalignment of the mask pattern P and load it onto the frame 200.
  • the vacuum transfer unit 60 may perform suction by the vacuum V on the side of the mask 100.
  • the adsorption by the vacuum (V) does not mean that the environment around the mask 100 is vacuumed and adsorbed, but air is pumped out along the internal gas flow path 63 of the vacuum transfer unit 60, so that the adsorption force is increased. It can be understood that the mask 100 is generated and adsorbed to the vacuum transfer unit 60.
  • the vacuum transfer unit 60 may include a housing 61, and a gas flow path 63 may be provided inside the housing 61.
  • One end of the housing 61 may contact the side of the mask 100, and the other end may be connected to an external pumping means (not shown).
  • Pumping means (not shown), such as a pump, can pump air from the gas flow path 63 inside the housing 61 to make the inside of the housing 61 into a vacuum atmosphere. Accordingly, the mask 100 in contact with one end of the housing 61 may be absorbed by the vacuum transfer unit 60.
  • the porous part 65 may be disposed at one end of the housing 61.
  • the porous portion 65 may be made of a porous material containing very small pores.
  • the holes and the slit have a large size and the adsorption force is not uniform in the hole and slit formation area. Some can be stressful. Therefore, when vacuum is applied between the pores of the porous part 65, the adsorption force can be uniformly generated on the surface of the porous part 65, thereby stably adsorbing and moving the mask 100.
  • the vacuum transfer unit 60 may adsorb at least two sides of the mask 100.
  • two sides of the left and right sides of the mask 100 may be adsorbed, or four upper, lower, left, and right sides of the mask 100 may be adsorbed.
  • FIG. 9A illustrates an example in which two vacuum transfer units 60 may attract left and right sides of the mask 100 and pull the left and right sides.
  • FIG. 9B illustrates an example in which four vacuum transfer units 60 ′ may pull the mask 100 in left, right, top, and bottom directions by absorbing four corner portions of the mask 100. have.
  • the present invention is not limited thereto, and the number of the vacuum transfer units 60 may be determined in consideration of the pulling direction, movement, and the like of the mask 100.
  • a moving means such as a rail, a belt, or the like for moving the vacuum conveyer 60 to the X, Y, Z, and ⁇ axes may be connected to the vacuum conveyer 60 to pull, adsorb, and move the mask 100. Can be. In the following, it is assumed and described in the form of FIG. 8B.
  • FIG. 10 is a schematic view showing an operation process of the mask transfer system according to an embodiment of the present invention.
  • the vacuum transfer unit 60 may absorb the mask 100 and move to the mask loading unit 90.
  • the mask 100 may be loaded on the mask loading unit 90 in a state where four corners are sucked and flattened by the vacuum transfer unit 60.
  • the vacuum transfer unit 60 may flatten the mask 100 while the mask 100 is loaded on the mask loading unit 90.
  • the mask 100 may be adsorbed onto the mask loading unit 90 by applying a suction pressure to the mask 100 in the vacuum hole VH on the mask loading unit 90.
  • the vacuum transfer unit 60 may apply a pressure to the mask 100 in the vacuum hole VH in the process of moving the mask 100 on the mask loading unit 90.
  • the vacuum transfer unit 60 even when the vacuum transfer unit 60 is not used, after the edge of the mask 100 is gripped by a gripper (not shown) and moved to the mask loading unit 90, the mask is opened while the mask 100 is extended.
  • the mask 100 may be adsorbed by applying a suction pressure in the vacuum hole VH of the loading unit 90. Since the recess 91 is formed at the corner of the mask loading unit 90, the gripper may not interfere with the mask loading unit 90 even when the gripper grips both edges of the mask 100.
  • the welding part of the mask 100 may be loaded on the mask loading part 90 in a state corresponding to the laser passing hole 93 of the mask loading part 90.
  • the mask 100 When the mask 100 is loaded on the mask loading unit 90, at least a corner portion of the mask 100 may protrude and be exposed to the outside of the recess 91.
  • the mask 100 may be flipped.
  • the transfer unit 92 may move the mask loading unit 90 on the frame 200 and flip the mask loading unit 90.
  • the mask 100 supported on the mask loading unit 90 can also be flipped.
  • the transfer unit 92 may move the mask loading unit 90 on the frame 200 while the mask loading unit 90 is flipped. Even if the mask 100 is flipped, the absorption force applied to the mask 100 in the vacuum hole VH of the mask loading unit 90 may be maintained so that the alignment state may be closely adhered to the mask loading unit 90 without being disturbed. .
  • the mask 100 may be sucked and supported by the mask loading unit 90 and transferred to the area of the frame 200.
  • FIG. 11 is a schematic diagram illustrating a state in which the tray 100 is loaded onto a frame and the mask 100 corresponds to the cell region CR of the frame 200 according to an embodiment of the present invention.
  • the mask 100 may correspond to one mask cell region CR of the frame 200.
  • the mask 100 By loading the mask loading unit 90 on which the mask 100 is adsorbed and supported on the frame 200 (or the mask cell sheet unit 220), the mask 100 can be corresponded to the mask cell region CR. have.
  • the transfer unit 92 is used to control the positions of the mask loading unit 90 and the mask 100 on the cell region CR of the frame 200. The mask 100 can be aligned.
  • the mask loading unit 90 is flipped so that the mask 100 faces downward, when the mask loading unit 90 is loaded onto the frame 200 (or the mask cell sheet unit 220), the mask ( 100 may be compressed by the mask loading unit 90 while being disposed between the mask loading unit 90 and the frame 200 (or the mask cell sheet unit 220).
  • the lower supporter 70 may be further disposed below the frame 200.
  • the lower supporter 70 may have a size enough to fit into the hollow region R of the frame rim 210 and may have a flat plate shape.
  • a predetermined support groove (not shown) corresponding to the shape of the mask cell sheet part 220 may be formed on the upper surface of the lower supporter 70. In this case, the edge sheet part 221 and the first and second grid sheet parts 223 and 225 are fitted into the support groove, so that the mask cell sheet part 220 may be more securely fixed.
  • the lower supporter 70 may compress the opposite surface of the mask cell region CR that the mask 100 contacts. That is, the lower supporter 70 may support the mask cell sheet part 220 in the upper direction to prevent the mask cell sheet part 220 from sagging in the lower direction during the bonding process of the mask 100. At the same time, the lower support 70 and the mask loading part 90 are pressed against the edge of the mask 100 and the frame 200 (or the mask cell sheet part 220) in a direction opposite to each other. The alignment of 100) can be maintained without being disturbed.
  • the mask 100 may be attached to the mask loading unit 90, and the mask 100 may be loaded on the frame 200 by simply loading the mask loading unit 90 onto the frame 200. Since the process corresponding to) is completed, no tensile force may be applied to the mask 100 in this process.
  • the mask 100 may be irradiated with the laser L to bond the mask 100 to the frame 200 by laser welding.
  • the laser L may be irradiated to the welding part of the mask 100 by passing through the laser passage hole 91 of the mask loading part 90.
  • the welding part of the mask 100 may refer to a target area in which the welding bead WB is formed by irradiating the laser L.
  • FIG. The welding part may correspond to at least a portion of the edge or dummy portion DM of the mask 100.
  • a weld bead WB is generated in the welded portion of the laser welded mask, and the weld bead WB may be integrally connected with the same material as that of the mask 100 / frame 200.
  • the mask cell sheet part 220 of the frame 200 has a thin thickness
  • the mask ( The tensile force remaining in the 100 may act on the mask cell sheet portion 220 and the mask cell region CR to deform them. Therefore, the mask 100 should be adhered to the mask cell sheet part 220 without applying a tensile force to the mask 100.
  • the frame integrated mask is manufactured by attaching the mask 100 to the frame 200 (or the mask cell sheet 220) without applying a tensile force, and using the frame integrated mask in a pixel deposition process. May occur.
  • the mask 100 thermally expands by a predetermined length.
  • a length of about 1 to 3 ppm may be changed according to a temperature rise of about 10 ° C. for forming a pixel deposition process atmosphere. For example, when the total length of the mask 100 is 500 mm, a length of about 5 to 15 ⁇ m may be increased. Then, a problem arises in that the alignment error of the patterns P becomes large while causing deformation such as the mask 100 is struck by its own weight or stretched and twisted while being fixed in the frame 200.
  • the present invention is characterized in that it corresponds to the mask cell region CR of the frame 200 and adheres to the mask 100 without applying a tensile force at a temperature higher than the normal temperature.
  • the mask 100 is expressed as corresponding to the frame 200.
  • the “process area” may refer to a space in which components such as the mask 100 and the frame 200 are located and an adhesion process of the mask 100 is performed.
  • the process region may be a space in a closed chamber, or may be an open space, and may mean only a space around a stage part (not shown) in which a process of bonding the mask 100 to the frame 200 is performed.
  • first temperature may mean a temperature that is higher than or equal to the pixel deposition process temperature when the frame integrated mask is used in the OLED pixel deposition process. Considering that the pixel deposition process temperature is about 25 ° C to 45 ° C, the first temperature may be about 25 ° C to 60 ° C.
  • the temperature rise of the process region may be performed by providing a heating means in the chamber, or installing a heating means around the process region.
  • the mask 100 may correspond to the mask cell region CR.
  • the temperature of the process region including the frame 200 may be increased (ET) to a first temperature.
  • the temperature of the process region may be changed after the masks 100 correspond to each mask cell region CR. It is also possible to raise (ET1).
  • the mask 10 of FIG. 1 includes six cells C1 to C6, the mask 10 has a long length, whereas the mask 100 of the present invention has a short length including one cell C.
  • the degree of distortion of the pixel position accuracy (PPA) can be reduced.
  • the mask 100 of the present invention May reduce the above error range by 1 / n according to the reduction of the relative length (corresponding to the reduction of the number of cells C).
  • the length of the mask 100 of the present invention is 100mm, it has a length reduced to 1/10 at 1m of the conventional mask 10, the PPA error of 1 ⁇ m occurs in the entire 100mm length As a result, the alignment error is significantly reduced.
  • the mask 100 is provided with a plurality of cells (C), each cell (C) corresponding to each cell region (CR) of the frame 200 within the range that the alignment error is minimized,
  • the mask 100 may correspond to the plurality of mask cell regions CR of the frame 200.
  • the mask 100 having the plurality of cells C may correspond to one mask cell region CR.
  • the mask 100 preferably has as few cells C as possible.
  • the production time can be significantly reduced.
  • each cell C11 to C16 included in the six masks 100 corresponds to one cell region CR11 to CR16, respectively, and checks the alignment state.
  • the time can be much shorter than the conventional method of simultaneously matching six cells C1 to C6 and confirming the alignment of all six cells C1 to C6 at the same time.
  • the product yield in 30 processes of matching and aligning 30 masks 100 with 30 cell areas CR: CR11 to CR56 respectively is 6 cells (C1).
  • 5 masks 10 (see FIG. 2A), each comprising ⁇ C6), may appear much higher than the conventional product yield in 5 steps of matching and aligning the frame 20. Since the conventional method of aligning six cells C1 to C6 in a region corresponding to six cells C at a time is a much more cumbersome and difficult task, product yield is low.
  • the mask 100 may be temporarily fixed to the frame 200 through a predetermined adhesive. Thereafter, the bonding step of the mask 100 may be performed.
  • the mask 100 may be preheated to a temperature higher than the first temperature before corresponding to the frame 200.
  • the mask loading unit 90 may further include a heating unit 95.
  • the heating unit 95 of the mask loading unit 90 may move the mask 100 to a temperature higher than the first temperature.
  • the mask 100 may be preheated to a temperature of about 3 ° C to 10 ° C higher than the first temperature.
  • the mask 100 While the mask 100 is stretched to correspond to the frame 200 while raising the mask 100 directly to the first temperature, fine wrinkles, bends, or the like of nm or ⁇ m may be generated on the surface thereof.
  • the alignment may be difficult to perform immediately before the mask 100 is adhered to the frame 200, and the alignment between the mask pattern P and the cell C may be performed even if the alignment is performed and the mask 100 is adhered to the frame 200. This error may occur.
  • the mask 100 loads the mask.
  • the mask 100 is adsorbed and supported by the unit 90 and contacts the frame 200, or enters the process region of the first temperature, the mask 100 is lowered by about 3 ° C. to 10 ° C. as the first temperature.
  • a tension may be applied in which the mask 100 contracts while shrinking.
  • the temperature is lowered only by a small temperature of about 3 ° C. to 10 ° C., the mask 100 is not deformed to affect the alignment of the mask pattern P and the cell C, and only shrinkage to be flattened occurs. Can be.
  • the flattened mask 100 may be perfectly aligned with the frame 200. Subsequently, at least a part of the edge of the mask 100 may be attached to the frame 200.
  • the adhesion may preferably be carried out by laser welding. Laser welding should be performed as close to the edge of the frame 200 as possible to reduce the excitement space between the mask 100 and the frame 200 as much as possible to increase the adhesion.
  • a weld bead WB is generated in the welded portion of the laser welded mask, and the weld bead WB may be integrally connected with the same material as that of the mask 100 / frame 200.
  • the present invention performs welding on the mask cell sheet portion 220 without applying a tensile force to the mask 100, the mask cell sheet portion 220 (or the edge sheet portion 221, the first and the second grid sheet) is welded. (223, 225) is not applied to the tension.
  • FIG. 12 is a schematic diagram illustrating a process of sequentially bonding the mask 100 to the cell region CR according to an embodiment of the present invention.
  • the remaining masks 100 may be sequentially corresponded to the remaining mask cells C, and the process of adhering to the frame 200 may be repeated.
  • the remaining masks 100 may be sequentially corresponded to the remaining mask cells C, and the temperature of the process region may be controlled as the first temperature and the second temperature in the process of adhering. Since the mask 100 already bonded to the frame 200 may present a reference position, the time required to sequentially match the remaining masks 100 to the cell region CR and to confirm the alignment state is significantly reduced. There is an advantage that can be.
  • the pixel position accuracy (PPA) between the mask 100 adhered to one mask cell region and the mask 100 adhered to the mask cell region adjacent thereto does not exceed 3 ⁇ m, and the alignment is very high.
  • PPA pixel position accuracy
  • FIG. 13 is a schematic diagram illustrating a process of lowering the temperature (LT) of the process region after attaching the mask 100 to the cell region CR of the frame 200 according to an embodiment of the present invention.
  • the temperature of the process region may be lowered to the second temperature LT.
  • the “second temperature” may mean a temperature lower than the first temperature. Considering that the first temperature is about 25 ° C. to 60 ° C., the second temperature may be about 20 ° C. to 30 ° C. provided that it is lower than the first temperature, and preferably, the second temperature may be room temperature.
  • the temperature drop in the process region may be performed by providing a cooling means in the chamber, installing a cooling means around the process region, naturally cooling to room temperature, or the like.
  • the mask 100 may heat shrink by a predetermined length.
  • the mask 100 may be thermally contracted isotropically along all lateral directions. However, since the mask 100 is fixedly connected to the frame 200 (or the mask cell sheet part 220) by welding, the thermal contraction of the mask 100 is itself tensioned with the surrounding mask cell sheet part 220. (TS) is applied. By applying a tension (TS) of the mask 100, the mask 100 may be more tightly bonded onto the frame 200.
  • the temperature of the process region is lowered to the second temperature (LT), so that all the masks 100 simultaneously cause thermal contraction.
  • LT second temperature
  • the problem that the 200 is deformed or the patterns P are large in alignment error can be prevented.
  • the tension TS is applied to the mask cell sheet part 220
  • the plurality of masks 100 apply the tension TS in opposite directions, the force is canceled to the mask cell sheet part. Deformation does not occur at 220.
  • the first grid sheet portion 223 between the mask 100 attached to the CR11 cell region and the mask 100 attached to the CR12 cell region may move in the right direction of the mask 100 attached to the CR11 cell region.
  • the acting tension TS and the acting tension TS acting toward the left side of the mask 100 attached to the CR12 cell region may be offset. Therefore, the deformation is minimized in the frame 200 (or the mask cell sheet part 220) due to the tension TS, thereby minimizing the alignment error of the mask 100 (or the mask pattern P). There is this.
  • FIG. 14 is a schematic diagram illustrating an OLED pixel deposition apparatus 1000 using frame integrated masks 100 and 200 according to an exemplary embodiment of the present invention.
  • the OLED pixel deposition apparatus 1000 includes a magnet plate 300 in which a magnet 310 is accommodated and a coolant line 350 is disposed, and an organic material source 600 from a lower portion of the magnet plate 300. And a deposition source supply unit (500) for supplying ().
  • a target substrate 900 such as glass on which the organic source 600 is deposited may be interposed between the magnet plate 300 and the source deposition unit 500.
  • the frame integrated masks 100 and 200 (or FMMs) for allowing the organic source 600 to be deposited pixel by pixel may be disposed on the target substrate 900 to be in close contact with or very close to each other.
  • the magnet 310 may generate a magnetic field and may be in close contact with the target substrate 900 by the magnetic field.
  • the deposition source supply unit 500 may supply the organic source 600 while reciprocating the left and right paths, and the organic source 600 supplied from the deposition source supply unit 500 may have patterns P formed in the frame integrated masks 100 and 200. ) May be deposited on one side of the target substrate 900. The deposited organic source 600 passing through the pattern P of the frame-integrated masks 100 and 200 may serve as the pixel 700 of the OLED.
  • the pattern of the frame-integrated masks 100 and 200 may be formed to be inclined S (or formed into a tapered shape S). . Since the organic sources 600 passing through the pattern in the diagonal direction along the inclined surface may also contribute to the formation of the pixel 700, the pixel 700 may be uniformly deposited in overall thickness.
  • the mask 100 is adhesively fixed to the frame 200 at a first temperature higher than the pixel deposition process temperature, even if the mask 100 is raised to the process temperature for pixel deposition, the position of the mask pattern P is hardly affected.
  • the PPA between the 100 and the neighboring mask 100 may be maintained not to exceed 3 ⁇ m.

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Abstract

La présente invention concerne un système de transfert de masque et un procédé de fabrication d'un masque ayant un cadre intégré. Le système de transfert de masque de la présente invention consiste en un système qui transfère un masque servant à la formation de pixels OLED. Dans une étape consistant à former d'un seul tenant un masque (100) et un cadre (200) qui supporte le masque, le masque est chargé et transféré, le système étant caractérisé en ce qu'il comprend : une partie de chargement de masque (90) qui peut adsorber une surface du masque (100), ce qui permet de la charger ; et une unité de transfert (92) qui déplace et qui retourne la partie de chargement de masque (90).
PCT/KR2019/009742 2018-08-08 2019-08-05 Système de transfert de masque et procédé de fabrication de masque ayant un cadre intégré WO2020032511A1 (fr)

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KR10-2018-0092533 2018-08-08
KR1020180092533A KR102283202B1 (ko) 2018-08-08 2018-08-08 마스크의 이송 시스템 및 프레임 일체형 마스크의 제조 방법

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