WO2019190121A1 - Procédé de fabrication de masque, substrat tampon destiné à supporter un masque et procédé de fabrication associé - Google Patents

Procédé de fabrication de masque, substrat tampon destiné à supporter un masque et procédé de fabrication associé Download PDF

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Publication number
WO2019190121A1
WO2019190121A1 PCT/KR2019/003281 KR2019003281W WO2019190121A1 WO 2019190121 A1 WO2019190121 A1 WO 2019190121A1 KR 2019003281 W KR2019003281 W KR 2019003281W WO 2019190121 A1 WO2019190121 A1 WO 2019190121A1
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WO
WIPO (PCT)
Prior art keywords
mask
metal film
buffer substrate
manufacturing
adhesive
Prior art date
Application number
PCT/KR2019/003281
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English (en)
Korean (ko)
Inventor
이유진
이병일
장택용
Original Assignee
주식회사 티지오테크
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Priority claimed from KR1020180123056A external-priority patent/KR102028639B1/ko
Application filed by 주식회사 티지오테크 filed Critical 주식회사 티지오테크
Publication of WO2019190121A1 publication Critical patent/WO2019190121A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms

Definitions

  • a method of manufacturing a mask, a mask support buffer substrate, and a method of manufacturing the same More specifically, the present invention relates to a method of manufacturing a mask, a mask supporting buffer substrate, and a method of manufacturing the mask, which can stably form a pattern on the mask and stably support and move without deformation of the mask.
  • a fine metal mask (FMM) method is used in which a thin metal mask is adhered to a substrate to deposit an organic material at a desired position.
  • QHD image quality is 500 ⁇ 600 pixel per inch (PPI), and the pixel size is about 30 ⁇ 50 ⁇ m. It has a resolution of.
  • the alignment error between each cell should be reduced to several ⁇ m, and the error beyond this may lead to product failure, resulting in very low yield. Therefore, there is a need for development of a technique for preventing deformation, such as knocking or twisting of a mask and making alignment clear, a technique for fixing a mask to a frame, and the like.
  • an object of the present invention is to provide a mask manufacturing method capable of stably forming a pattern on a mask, which is devised to solve the above-mentioned problems of the prior art.
  • Another object of the present invention is to provide a mask support buffer substrate capable of stably supporting and moving a mask without deformation and a method of manufacturing the same.
  • the above object of the present invention is a method of manufacturing a mask for forming an OLED pixel, comprising the steps of: (a) providing a mask metal film; (b) adhering a mask metal film on a buffer substrate having a temporary adhesive portion formed on one surface thereof; (c) forming a mask pattern on the mask metal film; and (d) separating the mask metal film on which the mask pattern is formed from the buffer substrate.
  • the mask metal film may be produced by rolling or electroforming.
  • the method may further include reducing the thickness of the mask metal film adhered to the buffer substrate between the steps (b) and (c).
  • the step (a) may include: (a1) forming a mask metal film on at least one surface of the conductive single crystal substrate; And (a2) separating the mask metal film from the conductive single crystal substrate.
  • a process of heat-treating the mask metal film may be further performed.
  • the temporary adhesive part may be an adhesive or adhesive sheet that can be separated by applying heat, and an adhesive or adhesive sheet that can be separated by UV irradiation.
  • the temporary adhesive may be liquid wax or thermal release tape.
  • the liquid wax can fix and bond the mask metal film and the buffer substrate at a temperature lower than 85 ° C.
  • step (b) the liquid wax is heated to 85 ° C. or higher, the mask metal film is brought into contact with the buffer substrate, and then the mask metal film and the buffer substrate are passed through the rollers to perform adhesion.
  • the laser through hole may be formed in the portion of the buffer substrate corresponding to the welded portion of the mask.
  • step (c) step (c1) forming a patterned insulating portion on the mask metal film; (c2) etching a portion of the mask metal film exposed between the insulating parts to form a mask pattern; And (c3) removing the insulation.
  • Step (d) may be performed to separate the mask metal film and the buffer substrate by performing at least one of heat application, chemical treatment, ultrasonic application, and UV application to the temporary bonding portion.
  • step (d) any one of a solvent debonding, heat debonding, peelable adhesive debonding, and room temperature debonding may be performed.
  • the above object of the present invention is a buffer substrate for supporting a mask for forming an OLED pixel, comprising: a buffer substrate; A temporary adhesive portion formed on the buffer substrate; And a mask bonded onto the buffer substrate via the temporary bonding portion and including a mask having a mask pattern formed thereon.
  • the thickness of the mask metal film may be 5 ⁇ m to 20 ⁇ m.
  • the temporary adhesive part may be an adhesive or adhesive sheet that can be separated by applying heat, and an adhesive or adhesive sheet that can be separated by UV irradiation.
  • the buffer substrate may include any one of a wafer, glass, silica, heat-resistant glass, quartz, alumina (Al 2 O 3 ), borosilicate glass, and zirconia. Can be.
  • Laser through holes may be formed in portions of the buffer substrate and the temporary bonding portions corresponding to the welding portions of the mask.
  • the mask may include one or a plurality of mask cells in which a plurality of mask patterns are formed.
  • the above object of the present invention is a method of manufacturing a buffer substrate (buffer substrate) for supporting a mask for forming an OLED pixel to correspond to a frame, comprising the steps of: (a) providing a mask metal film; (b) adhering a mask metal film on a buffer substrate having a temporary adhesive portion formed on one surface thereof; And (c) forming a mask pattern on the mask metal film to produce a mask.
  • 1 is a schematic view showing a conventional mask for OLED pixel deposition.
  • FIG. 2 is a schematic diagram showing a mask for forming a conventional high resolution OLED.
  • 3 to 7 are schematic views showing a manufacturing process of a mask according to an embodiment of the present invention.
  • Figure 8 is an enlarged cross-sectional schematic diagram showing a temporary adhesive portion according to an embodiment of the present invention.
  • FIG. 9 is a front and side cross-sectional view showing a frame-integrated mask according to an embodiment of the present invention.
  • FIG. 10 is a front and side cross-sectional view showing a frame according to an embodiment of the present invention.
  • FIG. 11 is a schematic diagram illustrating an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention.
  • UV UV is applied
  • FIG. 1 is a schematic diagram showing a conventional mask for depositing OLED pixels 10.
  • the conventional mask 10 may be manufactured in a stick type or a plate type.
  • the mask 10 shown in FIG. 1A is a stick type mask, and both sides of the stick may be welded and fixed to the OLED pixel deposition frame.
  • the mask 10 shown in FIG. 1B is a plate-type mask, and may be used in a large area pixel forming process, and the edge of the plate is formed by the OLED pixel deposition frame 200 [see FIG. 11]. It can be used by fixing to welding.
  • (C) is an enlarged side sectional view of A-A 'part.
  • a plurality of display cells C are provided in the body (or mask film 11) of the mask 10.
  • One cell C corresponds to one display such as a smartphone.
  • a pixel pattern P (mask pattern P) is formed so as to correspond to each pixel of the display.
  • a plurality of pixel patterns P corresponding to R, G, and B appear.
  • the pixel pattern P is formed in the cell C to have a resolution of 70 ⁇ 140. That is, a large number of pixel patterns P may be clustered to form one cell C, and a plurality of cells C may be formed in the mask 10.
  • the mask patterns P may have an inclined side portion and a taper shape. It is preferable that the mask pattern P has a substantially tapered shape having a shape that becomes wider or narrower from the top to the bottom, and the upper surface of the mask 100 is the target substrate 900 (see FIG. 11). It is more preferable that the mask pattern P has a shape that becomes wider in width from the top to the bottom because it is in close contact with
  • FIG. 2 is a schematic diagram showing a mask for forming a conventional high resolution OLED.
  • the size of the pattern is decreasing, and the thickness of the mask metal film used for this needs to be thinned.
  • the pixel spacing and the pixel size of the mask 10 'must be reduced (PD-> PD').
  • T1 thickness of about 30 to 50 ⁇ m
  • patterning 13 suitable for the minute pixel interval PD' and pixel size is formed. Since it is difficult to do this, it becomes a cause of a bad yield in a machining process.
  • a thin mask 10' must be used.
  • fine patterning may be performed only by using a thin mask 10 'having a thickness T2 of about 20 ⁇ m or less.
  • the use of a thin mask 10 ′ having a thickness T2 of about 10 ⁇ m may be considered for ultra high resolution of UHD or higher.
  • 3 to 7 are schematic views showing a manufacturing process of a mask according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram illustrating a process of manufacturing a mask metal film by a rolling method according to an embodiment of the present invention.
  • 4 is a schematic diagram illustrating a process of manufacturing a mask metal film according to another embodiment of the present invention by electroforming.
  • the mask metal film 110 may be prepared.
  • the mask metal film 110 may be prepared by a rolling method.
  • the metal sheet generated by the rolling process may be used as the mask metal film 110 ′.
  • the metal sheet manufactured by the rolling process may have a thickness of several tens to several hundred micrometers in the manufacturing process. As described above in FIG. 2, fine patterning may be performed by using a thin mask metal film 110 having a thickness of about 20 ⁇ m or less for UHD high resolution, and a thickness of about 10 ⁇ m for ultra high resolution of UHD or more.
  • a thin mask metal film 110 having a must be used.
  • the mask metal film 110 ′ produced by the rolling process has a thickness of about 25 to 500 ⁇ m, the thickness of the mask metal film 110 ′ needs to be thinner.
  • planarizing (PS) one surface of the mask metal film 110 ′ may be further performed.
  • the planarization PS means that the thickness of the mask metal film 110 ′ is reduced by thinning one surface (upper surface) of the mask metal film 110 ′ and simultaneously removing a portion of the mask metal film 110 ′.
  • Planarization (PS) may be performed by a chemical mechanical polishing (CMP) method, and known CMP methods may be used without limitation.
  • CMP chemical mechanical polishing
  • the thickness of the mask metal layer 110 ′ may be reduced by chemical wet etching or dry etching.
  • a process capable of flattening to thin the thickness of the mask metal film 110 ′ may be used without limitation.
  • the surface roughness of the top surface (R a) can be controlled.
  • mirroring may proceed with further reduction in surface roughness.
  • another example may be after performing a chemical wet etch or dry etch planarization process (PS) advances to, in addition to the polishing process, such as a separate CMP process after reducing the surface roughness (R a).
  • PS chemical wet etch or dry etch planarization process
  • the thickness of the mask metal film 110 ′ may be made thinner than about 50 ⁇ m. Accordingly, the thickness of the mask metal film 110 may be about 2 ⁇ m to about 50 ⁇ m, and more preferably about 5 ⁇ m to about 20 ⁇ m. However, it is not necessarily limited thereto.
  • the mask metal film 110 may be manufactured by reducing the thickness of the mask metal film 110 ′ manufactured by the rolling process. However, the thickness of the mask metal film 110 ′ may be reduced by performing a planarization (PS) process in a state where the mask metal film 110 ′ is bonded to the buffer substrate 50 through the temporary adhesion part 55.
  • PS planarization
  • the mask metal film 110 may be prepared by electroplating.
  • the conductive substrate 21 is prepared.
  • the substrate 21 of the mother plate may be a conductive material.
  • the mother plate can be used as a cathode electrode in electroplating.
  • the conductive material in the case of metal, metal oxides may be generated on the surface, impurities may be introduced during the metal manufacturing process, and in the case of the polycrystalline silicon substrate, inclusions or grain boundaries may exist, and the conductive polymer may be present.
  • a base material it is highly likely to contain an impurity, and strength. Acid resistance may be weak.
  • defects Elements that interfere with the uniform formation of an electric field on the surface of the substrate (or negative electrode body), such as metal oxides, impurities, inclusions, grain boundaries, etc., are referred to as "defects.” Due to the defect, a uniform electric field may not be applied to the cathode body of the above-described material, so that a part of the plating film 110 (or the mask metal film 110) may be unevenly formed.
  • Non-uniformity of the plating film and the plating film pattern may adversely affect the formation of the pixel in implementing a UHD-class or higher definition pixel.
  • QHD image quality is 500 ⁇ 600 pixel per inch (PPI)
  • the pixel size is about 30 ⁇ 50 ⁇ m
  • 4K UHD, 8K UHD high definition is ⁇ 860 PPI, ⁇ 1600 PPI Have the same resolution.
  • the micro display applied directly to the VR device, or the micro display used in the VR device aims at an ultra-high quality of about 2,000 PPI or more, and the size of the pixel reaches about 5 to 10 ⁇ m.
  • the pattern width of the FMM and shadow mask applied to this can be formed in a size of several to several tens of micrometers, preferably smaller than 30 micrometers, even a defect of several micrometers is large enough to occupy a large proportion of the pattern size of the mask. to be.
  • an additional process for removing metal oxides, impurities, and the like may be performed to remove the defects in the cathode material of the material described above, and another defect such as etching of the anode material may be caused in this process. have.
  • the present invention can use a mother plate (or a negative electrode body) of a single crystal material.
  • a mother plate or a negative electrode body of a single crystal material.
  • it is preferable that it is a single crystal silicon material.
  • a high concentration doping of 10 19 / cm 3 or more may be performed on the single crystal silicon base plate. Doping may be performed on the entirety of the mother plate, or only on the surface portion of the mother plate.
  • metals such as Ti, Cu, Ag, carbon-based materials such as semiconductors such as GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge, graphite, and graphene , CH 3 NH 3 PbCl 3, CH 3 NH 3 PbBr 3, CH 3 NH 3 PbI 3, SrTiO 3 , etc. page containing the perovskite (perovskite) superconductor single crystalline ceramic, aircraft single crystal second heat-resistant alloy for components for such structures And the like can be used.
  • Metal and carbon-based materials are basically conductive materials.
  • a high concentration doping of 10 19 / cm 3 or more may be performed to have conductivity.
  • the conductivity may be formed by performing doping or forming oxygen vacancies. Doping may be performed on the entirety of the mother plate, or only on the surface portion of the mother plate.
  • a uniform plating film 110 may be generated due to the formation of a uniform electric field on all surfaces during electroplating.
  • the frame-integrated masks 100 and 200 manufactured through the uniform plating layer may further improve the image quality level of the OLED pixel.
  • process costs are reduced and productivity is improved.
  • the conductive substrate 21 is used as a mother plate (cathode body), and the anode body (not shown) is spaced apart on the conductive substrate 21.
  • the plating film 110 (or the mask metal film 110) can be formed in the electroplating.
  • the plating film 110 may be formed on the exposed top and side surfaces of the conductive substrate 21 facing the anode and capable of acting on an electric field.
  • the plating film 110 may be formed even on a part of the lower surface of the conductive substrate 21.
  • the edge of the plating film 110 may be cut (D) with a laser, or a photoresist layer may be formed on the plating film 110, and only a portion of the exposed plating film 110 may be etched and removed (D). Can be. Accordingly, as shown in FIG. 4B, the plating film 110 can be separated from the conductive substrate 21.
  • heat treatment may be performed before the plating film 110 is separated from the conductive substrate 21, heat treatment (H) may be performed.
  • the plating film or the base plate, the cathode body
  • Heat treatment may be carried out at a temperature of 300 °C to 800 °C.
  • the Invar thin plate produced by electroplating has a higher coefficient of thermal expansion as compared to the Invar thin plate produced by rolling.
  • the thermal expansion coefficient can be lowered by performing heat treatment on the Invar thin plate.
  • peeling, deformation, etc. may occur on the Invar thin plate. This is a phenomenon that occurs because only the Invar thin plate is heat-treated, or the Invar thin plate temporarily bonded only to the upper surface of the conductive substrate 21.
  • the plating film 110 is formed not only on the upper surface of the conductive substrate 21 but also on part of the side surface and the lower surface, no peeling or deformation occurs even when the heat treatment (H) is performed.
  • the thickness of the mask metal film 110 generated by the electroplating process may be thinner than the rolling process. Accordingly, although the planarization (PS) process of reducing the thickness may be omitted, the etching characteristics may vary depending on the composition of the surface layer of the plating mask metal film 110 ′ and the crystal structure / fine structure. It is necessary to control the surface characteristics and thickness through.
  • PS planarization
  • 5 to 7 are schematic views illustrating a process of manufacturing a mask support buffer substrate by adhering a mask metal layer 110 on a buffer substrate 50 and forming a mask 100 according to an embodiment of the present invention.
  • a buffer substrate 50 may be provided.
  • a medium for supporting the mask metal film 110 or a state in which the manufactured mask 100 is attached and supported on one surface of the buffer substrate 500 is provided. It can be moved to.
  • One surface of the buffer substrate 50 may be flat so as to support the flat mask 100 or the mask metal film 110.
  • the buffer substrate 50 may have a flat plate shape having a larger area than that of the mask metal film 110 so that the mask metal film 110 may be entirely supported.
  • the buffer substrate 50 may be made of a transparent material so that the vision 100 may be easily observed in the process of aligning and bonding the mask 100 to the frame 200 in a subsequent process.
  • the laser may penetrate the transparent material.
  • a transparent material materials such as glass, silica, heat-resistant glass, quartz, alumina (Al 2 O 3 ), borosilicate glass, and zirconia may be used.
  • the buffer substrate 50 may use a BOROFLOAT ® 33 material having excellent heat resistance, chemical durability, mechanical strength, transparency, and the like in borosilicate glass.
  • BOROFLOAT ® 33 has a thermal expansion coefficient of about 3.3, which is advantageous in controlling the mask metal film 110 because the difference between the Invar mask metal film 110 and the thermal expansion coefficient is small.
  • the buffer substrate 50 which is in contact with the mask metal film 110 so as not to generate an air gap between the interface with the mask metal film 110 (or the mask 100) is mirrored.
  • the surface roughness Ra of one surface of the buffer substrate 50 may be 100 nm or less.
  • the buffer substrate 50 may use a wafer. Since a wafer has a surface roughness Ra of about 10 nm, many products on the market, and many surface treatment processes are known, the wafer can be used as the buffer substrate 50. Since the surface roughness Ra of the buffer substrate 50 is nm scale, there is no air gap or almost no air gap, and it is easy to generate the welding bead WB by laser welding, thereby affecting the alignment error of the mask pattern P. May not give.
  • the buffer substrate 50 has a laser passing hole in the buffer substrate 50 so that the laser L irradiated from the upper portion of the buffer substrate 50 can reach the welding part (region to be welded) of the mask 100. Not shown) may be formed. Laser through holes (not shown) may be formed in the buffer substrate 50 to correspond to the position and the number of welds. Since a plurality of welding parts are disposed along a predetermined interval at edges or dummy DM portions of the mask 100, a plurality of laser passing holes (not shown) may also be formed along the predetermined interval to correspond thereto.
  • the laser passing hole also has the buffer substrate 50 at both sides (left / right).
  • a plurality may be formed along a predetermined interval.
  • a laser through hole may be formed in a state in which the temporary adhesive part 55 is formed on the buffer substrate 50. In this case, the laser through hole (not shown) may be formed to penetrate the buffer substrate 50 and the temporary adhesive part 55.
  • the laser through hole does not necessarily correspond to the position and the number of welds.
  • welding may be performed by irradiating the laser L only to a part of the laser passing holes (not shown).
  • some of the laser passing holes (not shown) corresponding to the welding part may be used instead of the alignment mark when the mask 100 and the buffer substrate 50 are aligned. If the material of the buffer substrate 50 is transparent to the laser light, laser pass holes (not shown) may not be formed.
  • a temporary adhesive part 55 may be formed on one surface of the buffer substrate 50.
  • the mask 100 (or the mask metal film 110) is temporarily bonded to one surface of the buffer substrate 50 until the mask 100 is bonded to the frame 200. ) Can be supported.
  • the temporary adhesive part 55 may use an adhesive or an adhesive sheet that can be separated by applying heat, an adhesive or an adhesive sheet that can be separated by UV irradiation.
  • the temporary adhesive part 55 may use liquid wax.
  • the liquid wax can use the same thing as the wax used in the polishing step of a semiconductor wafer, etc.,
  • the type is not specifically limited.
  • Liquid waxes may mainly include solvents and materials such as acrylic, vinyl acetate, nylon and various polymers as resin components for controlling adhesion, impact resistance, and the like regarding holding force.
  • the temporary adhesive part 55 may use acrylonitrile butadiene rubber (ABR) as a resin component and SKYLIQUID ABR-4016 including n-propyl alcohol as a solvent component.
  • ABR acrylonitrile butadiene rubber
  • SKYLIQUID ABR-4016 including n-propyl alcohol
  • the temporary adhesive portion 55 which is a liquid wax, has a low viscosity at temperatures higher than 85 ° C to 100 ° C, and may become viscous at a temperature lower than 85 ° C and may be partially solid, such that the mask metal film 110 'and the buffer substrate ( 50) can be fixedly bonded.
  • the mask metal film 110 ′ may be adhered to the buffer substrate 50. After the liquid wax is heated to 85 ° C. or more and the mask metal film 110 ′ is brought into contact with the buffer substrate 50, the mask metal film 110 and the buffer substrate 50 may be passed between the rollers to perform adhesion. have.
  • the buffer substrate 50 may be baked at about 120 ° C. for 60 seconds to vaporize the solvent of the temporary adhesive part 55, and immediately proceed to a mask metal film lamination process.
  • Lamination is performed by loading the mask metal film 110 ′ on the buffer substrate 50 having the temporary adhesive part 55 formed on one surface thereof, and passing it between an upper roll of about 100 ° C. and a lower roll of about 0 ° C. can do. As a result, the mask metal film 110 ′ may be contacted on the buffer substrate 50 via the temporary adhesive part 55.
  • the temporary adhesive part 55 may use a thermal release tape.
  • a core film 56 such as a PET film is disposed in the center, and thermal release adhesives 57a and 57b are arranged on both surfaces of the core film 56, and the adhesive layer 57a is provided.
  • 57b) may be in a form in which release films / release films 58a and 58b are disposed.
  • the adhesive layers 57a and 57b disposed on both surfaces of the core film 56 may have different temperatures at which they are peeled off.
  • the bottom surface (second adhesive layer 57b) of the heat release tape is adhered to the buffer substrate 50, and the The upper surface (first adhesive layer 57a) may be adhered to the mask metal film 110 '. Since the temperature at which the first adhesive layer 57a and the second adhesive layer 57b are separated from each other is different, when the buffer substrate 50 is separated from the mask 100 in a subsequent process, the first adhesive layer 57a is formed.
  • the mask 100 may be separated from the buffer substrate 50 and the temporary adhesive part 55 by applying heat to be separated.
  • one surface of the mask metal film 110 ′ may be planarized (PS).
  • the mask metal film 110 ′ manufactured by the rolling process may reduce the thickness 110 ′-> 110 by a planarization (PS) process.
  • the mask metal film 110 manufactured by the electroplating process may be performed with a planarization (PS) process to control surface characteristics and thickness.
  • the mask metal film 110 may have a thickness of about 5 ⁇ m to 20 ⁇ m. Can be.
  • a patterned insulating portion 25 may be formed on the mask metal film 110.
  • the insulating portion 25 may be formed of a photoresist material using a printing method or the like.
  • etching of the mask metal layer 110 may be performed. Methods such as dry etching and wet etching may be used without limitation, and a portion of the mask metal film 110 exposed to the empty space 26 between the insulating portions 25 may be etched as a result of the etching. An etched portion of the mask metal layer 110 may constitute a mask pattern P. FIG.
  • the insulation portion 25 may be removed. If the insulating part 25 is removed, the mask 100 having the plurality of mask patterns P formed on the mask metal film 110 may be completed.
  • the mask 100 is supported on the buffer substrate 50 via the temporary adhesive part 55.
  • the temporary adhesive part 55 By proceeding only to this step, by moving the buffer substrate 50 itself supported by the mask 100 to adhere the mask 100 to the frame 200, it can be used to manufacture a frame-integrated mask (see Fig. 9).
  • the mask 100 may be separated from the buffer substrate 50, and the mask 100 may be cut in a unit including one cell C to be used for manufacturing a frame-integrated mask.
  • the process of separating the mask 100 from the buffer substrate 50 is further performed.
  • the mask 100 and the buffer substrate 50 may be debonded. Separation of the mask 100 and the buffer substrate 50 may be performed through at least one of heat application (ET), chemical treatment (CM), ultrasonic application (US), and UV application (UV) to the temporary adhesive part 55. Can be.
  • E heat application
  • CM chemical treatment
  • US ultrasonic application
  • UV UV application
  • the viscosity of the temporary adhesive part 55 is lowered, and the adhesion between the mask 100 and the buffer substrate 50 is weakened.
  • 100 and the buffer substrate 50 may be separated.
  • the mask 100 and the buffer substrate 50 may be separated by dissolving and removing the temporary adhesive part 55 by dipping (CM) the temporary adhesive part 55 in chemical substances such as IPA, acetone, and ethanol. Can be.
  • CM dipping
  • UV UV
  • the temporary bonding part 55 which mediates the adhesion between the mask 100 and the buffer substrate 50 is a TBDB adhesive material (temporary bonding & debonding adhesive), various debonding methods can be used.
  • CM chemical treatment
  • debonding may be performed.
  • the solvent since the pattern P is formed in the mask 100, the solvent may penetrate through the mask pattern P and the interface between the mask 100 and the buffer substrate 50.
  • Solvent debonding has the advantage of being relatively economical as compared to other debonding methods because it can be debonded at room temperature and does not require a separate, devised complex debonding facility.
  • a heat debonding method according to heat application ET may be used. Debonding may be performed in the vertical direction or the left and right directions when the decomposition of the temporary adhesive part 55 is induced using high temperature heat and the adhesive force between the mask 100 and the buffer substrate 50 is reduced.
  • a peelable adhesive debonding method according to heat application (ET), UV application (UV), or the like may be used.
  • debonding may be performed by a peeling adhesive debonding method, which does not require high temperature heat treatment and expensive heat treatment equipment as a thermal debonding method. Has a relatively simple advantage.
  • a room temperature debonding method according to chemical treatment (CM), ultrasonic application (US), UV application (UV), or the like may be used.
  • CM chemical treatment
  • US ultrasonic application
  • UV UV
  • the non-sticky process is applied to a part (center) of the mask 100 or the buffer substrate 50, only the edge part may be adhered by the temporary adhesive part 55.
  • the solvent penetrates into the edge portion, and the debonding is performed by dissolution of the entrance-adhesion part 55.
  • the remaining portions of the mask 100 and the buffer substrate 50 except for the edges of the mask 100 and the buffer substrate 50 are not directly lost during bonding and debonding, or defects due to the adhesive material residue during debonding do not occur.
  • the process cost can be relatively reduced.
  • the separation of the mask 100 and the buffer substrate 55 may be completed, and thus manufacturing of the mask 100 having the plurality of mask patterns P may be completed.
  • the mask 100 may be a large mask (FIG. 7 (h1)) in which a plurality of mask cells C are formed, or may be a mask (FIG. 7 (h2)) in which one mask cell C is formed.
  • the mask 100 may include one or a plurality of mask cells C on which a plurality of mask patterns P are formed, and a dummy DM around the mask cells C.
  • FIG. As described above, the mask 100 may be manufactured from a metal sheet generated by a rolling process, electroplating, or the like.
  • the dummy DM corresponds to a portion of the mask film 110 (mask metal film 110) except for the cell C, includes only the mask film 110, or a predetermined dummy in a form similar to the mask pattern P.
  • the patterned mask layer 110 may be included.
  • the width of the mask pattern P may be smaller than 40 ⁇ m, and the thickness of the mask 100 may be about 5 to 20 ⁇ m. Since the frame 200 includes a plurality of mask cell regions CR: CR11 to CR56, the mask 100 having mask cells C11 to C56 corresponding to the mask cell regions CR11 to CR56, respectively. ) Can also be provided in plurality.
  • FIG. 9 is a front view (FIG. 9 (a)) and a side cross-sectional view (FIG. 9 (b)) showing a frame-integrated mask according to an embodiment of the present invention
  • Figure 10 is in accordance with an embodiment of the present invention It is a front view (FIG. 10 (a)) and a side cross-sectional view (FIG. 10 (b)) which show a frame.
  • the frame integrated mask may include a plurality of masks 100 and one frame 200.
  • the plurality of masks 100 are bonded to the frame 200 one by one.
  • the mask 100 is assumed to use a mask 100 in which one mask cell C shown in FIG. 7 (h2) is formed.
  • the rectangular mask 100 will be described as an example.
  • the masks 100 may be provided with protrusions clamped at both sides before being bonded to the frame 200. The protrusions can be removed after they are glued.
  • a plurality of mask patterns P may be formed in each mask 100, and one cell C may be formed in one mask 100.
  • One mask cell C may correspond to one display such as a smartphone.
  • the mask 100 may be an invar having a thermal expansion coefficient of about 1.0 ⁇ 10 ⁇ 6 / ° C. and a super invar material having about 1.0 ⁇ 10 ⁇ 7 / ° C. Since the mask 100 of this material has a very low coefficient of thermal expansion, there is little possibility that the pattern shape of the mask is deformed by thermal energy, and thus, the mask 100 may be used as a fine metal mask (FMM) or a shadow mask in high-resolution OLED manufacturing. In addition, in consideration of the recent development of techniques for performing the pixel deposition process in a range where the temperature change is not large, the mask 100 has a slightly larger thermal expansion coefficient than that of nickel (Ni) and nickel-cobalt (Ni-Co). It may be a material such as).
  • a planarization (PS) process may be necessary because it is thicker in thickness than a plated film formed by electroplating, but a separate heat treatment process may be performed because the coefficient of thermal expansion (CTE) is low. It does not need to be carried out and has the advantage of strong corrosion resistance.
  • CTE coefficient of thermal expansion
  • generated by electroforming can also be used, without necessarily using the metal sheet
  • the thermal expansion coefficient of the electroplating sheet may be lowered by further performing a heat treatment process.
  • the frame 200 is formed to bond the plurality of masks 100.
  • the frame 200 may include various edges formed in a first direction (eg, a horizontal direction) and a second direction (eg, a vertical direction) including an outermost edge. These various corners may define the area to which the mask 100 is to be bonded on the frame 200.
  • the frame 200 may include an edge frame portion 210 having a substantially rectangular shape and a rectangular frame shape.
  • the inside of the frame frame 210 may be hollow. That is, the frame frame portion 210 may include a hollow area.
  • the frame 200 may be made of a metal material such as Invar, Super Invar, Aluminum, Titanium, etc., and may be made of Inbar, Super Invar, Nickel, or Nickel-Cobalt having the same thermal expansion coefficient as a mask in consideration of thermal deformation.
  • the materials may be applied to both the edge frame portion 210 and the mask cell sheet portion 220 which are components of the frame 200.
  • the frame 200 may include a plurality of mask cell regions CR and may include a mask cell sheet portion 220 connected to the edge frame portion 210.
  • the mask cell sheet part 220 may be formed by rolling, or may be formed using another film forming process such as electroplating.
  • the mask cell sheet part 220 may be connected to the edge frame part 210 after forming a plurality of mask cell areas CR through laser scribing or etching on a flat sheet.
  • the mask cell sheet unit 220 may form a plurality of mask cell regions CR through laser scribing, etching, etc. after connecting the planar sheet to the edge frame unit 210.
  • the mask cell sheet part 220 may include at least one of the edge sheet part 221 and the first and second grid sheet parts 223 and 225.
  • the edge sheet portion 221 and the first and second grid sheet portions 223 and 225 refer to respective portions partitioned from the same sheet, which are integrally formed with each other.
  • the edge sheet portion 221 may be substantially connected to the edge frame portion 210. Accordingly, the edge sheet part 221 may have a substantially rectangular shape and a rectangular frame shape corresponding to the edge frame part 210.
  • first grid sheet part 223 may extend in a first direction (horizontal direction).
  • the first grid sheet part 223 may be formed in a straight line shape and both ends thereof may be connected to the edge sheet part 221.
  • each of the first grid sheet portions 223 may be equally spaced apart.
  • the second grid sheet part 225 may be formed to extend in a second direction (vertical direction).
  • the second grid sheet part 225 may be formed in a straight line shape and both ends thereof may be connected to the edge sheet part 221.
  • the first grid sheet portion 223 and the second grid sheet portion 225 may vertically cross each other.
  • each of the second grid sheet portions 225 preferably has an equal interval.
  • the spacing between the first grid sheet portions 223 and the spacing between the second grid sheet portions 225 may be the same or different according to the size of the mask cell C.
  • the first grid sheet portion 223 and the second grid sheet portion 225 have a thin thickness in the form of a thin film, but the shape of the cross section perpendicular to the longitudinal direction may be a rectangle, a square shape such as a parallelogram, a triangular shape, or the like. The edges, edges, and corners may be partially rounded.
  • the cross-sectional shape is adjustable in the process of laser scribing, etching and the like.
  • the thickness of the edge frame portion 210 may be thicker than the thickness of the mask cell sheet portion 220.
  • the edge frame part 210 may be formed to a thickness of several mm to several cm because it is responsible for the overall rigidity of the frame 200.
  • the mask cell sheet part 220 is thinner than the thickness of the edge frame part 210, but preferably thicker than the mask 100.
  • the mask cell sheet part 220 may have a thickness of about 0.1 mm to about 1 mm.
  • the widths of the first and second grid sheet parts 223 and 225 may be formed to about 1 to 5 mm.
  • a plurality of mask cell areas CR: CR11 to CR56 may be provided except for an area occupied by the edge sheet part 221 and the first and second grid sheet parts 223 and 225 in the planar sheet.
  • the mask cell region CR is an area occupied by the edge sheet portion 221 and the first and second grid sheet portions 223 and 225 in the hollow region R of the edge frame portion 210. Except for, it may mean an empty area.
  • the mask C may be used as a passage through which the pixels of the OLED are deposited through the mask pattern P.
  • FIG. As described above, one mask cell C corresponds to one display such as a smartphone.
  • Mask patterns P constituting one cell C may be formed in one mask 100.
  • one mask 100 may include a plurality of cells C, and each cell C may correspond to each cell region CR of the frame 200. It is necessary to avoid the large area mask 100, and the small area mask 100 provided with one cell C is preferable.
  • one mask 100 having a plurality of cells C may correspond to one cell region CR of the frame 200. In this case, for clear alignment, it may be considered to correspond to the mask 100 having a small number of cells C of about 2-3.
  • the frame 200 may include a plurality of mask cell regions CR, and each mask 100 may be bonded such that one mask cell C corresponds to the mask cell region CR.
  • the mask cell C may correspond to the mask cell region CR of the frame 200, and part or all of the dummy may be attached to the frame 200 (mask cell sheet portion 220). Accordingly, the mask 100 and the frame 200 may form an integrated structure.
  • the frame is not manufactured by bonding the mask cell sheet portion 220 to the edge frame portion 210, the edge frame portion 210 in the hollow region (R) portion of the edge frame portion 210 ), A frame in which a grid frame (corresponding to the grid sheet portions 223 and 225) which is integral with one another can be used immediately.
  • the frame of this type also includes at least one mask cell region CR, and the mask integrated region may be manufactured by corresponding the mask 100 to the mask cell region CR.
  • the degree of distortion of the pixel position accuracy may be reduced.
  • the mask 100 of the present invention has a relative length. According to the reduction (corresponding to the reduction of the number of cells C), the above error range may be 1 / n.
  • the length of the mask 100 of the present invention is 100mm, since it has a length reduced to 1/10 in 1m of the conventional mask, a PPA error of 1 ⁇ m occurs in the entire 100mm length, alignment error There is an effect that is significantly reduced.
  • each cell (C) corresponding to each cell region (CR) of the frame 200 is within a range that the alignment error is minimized
  • the mask 100 may correspond to the plurality of mask cell regions CR of the frame 200.
  • the mask 100 having the plurality of cells C may correspond to one mask cell region CR.
  • the mask 100 has as few cells as possible.
  • the plurality of cells C: C1 to C6 must be simultaneously associated and the alignment state must be confirmed. Compared with the conventional method, manufacturing time can be reduced significantly.
  • each cell C11 to C16 included in the six masks 100 corresponds to one cell region CR11 to CR16, respectively, and checks the alignment state.
  • the time can be much shorter than the conventional method of simultaneously matching six cells C1 to C6 and simultaneously confirming the alignment of the six cells C1 to C6.
  • the product yield in 30 steps of matching and aligning 30 masks 100 with 30 cell areas CR: CR11 to CR56, respectively results in six cells (C1). 5 masks each comprising ⁇ C6) may appear much higher than the conventional product yield in 5 steps of matching and aligning the frame. Since the conventional method of aligning six cells C1 to C6 in a region corresponding to six cells C at a time is much more cumbersome and difficult, the product yield is low.
  • FIG. 11 is a schematic diagram illustrating an OLED pixel deposition apparatus 1000 using frame-integrated masks 100 and 200 according to an embodiment of the present invention.
  • the OLED pixel deposition apparatus 1000 includes a magnet plate 300 in which a magnet 310 is accommodated and a coolant line 350 is disposed, and an organic material source 600 from a lower portion of the magnet plate 300. And a deposition source supply unit (500) for supplying ().
  • a target substrate 900 such as glass on which the organic source 600 is deposited may be interposed between the magnet plate 300 and the source deposition unit 500.
  • the frame-integrated masks 100 and 200 (or FMMs) for allowing the organic material 600 to be deposited pixel by pixel may be closely attached or very close to each other.
  • the magnet 310 may generate a magnetic field and may be in close contact with the target substrate 900 by the magnetic field.
  • the deposition source supply unit 500 may supply the organic source 600 while reciprocating the left and right paths, and the organic source 600 supplied from the deposition source supply unit 500 may have patterns P formed in the frame integrated masks 100 and 200. ) May be deposited on one side of the target substrate 900. The deposited organic source 600 passing through the pattern P of the frame-integrated masks 100 and 200 can act as the pixel 700 of the OLED.
  • the pattern of the frame-integrated masks 100 and 200 may be formed to be inclined S (or formed into a tapered shape S). . Since the organic sources 600 passing through the pattern in a diagonal direction along the inclined surface may also contribute to the formation of the pixel 700, the pixel 700 may be uniformly deposited as a whole.
  • the mask 100 is adhesively fixed to the frame 200 at a first temperature higher than the pixel deposition process temperature, even if the mask 100 is raised to the process temperature for pixel deposition, the position of the mask pattern P is hardly affected.
  • the PPA between the 100 and the neighboring mask 100 may be maintained not to exceed 3 ⁇ m.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un substrat tampon destiné à supporter un masque, son procédé de fabrication et un procédé de fabrication d'un masque intégré à un cadre. Le procédé de fabrication d'un substrat tampon destiné à supporter un masque selon la présente invention, qui est un procédé de fabrication d'un substrat tampon (50) qui supporte un masque (100) pour la formation de pixels OLED et qui fait correspondre le masque (100) avec un cadre (200), comprend : (a) une étape consistant à fournir un film métallique pour masque (110) ; (b) une étape consistant à faire adhérer le film métallique pour masque (110) sur le substrat tampon (50) sur l'une des surfaces duquel est formée une partie adhésive temporaire (55) ; (c) une étape consistant à former un motif de masque (P) sur le film métallique pour masque (110) ; et (d) une étape consistant à séparer, du substrat tampon (50), le film métallique pour masque (110) sur lequel est formé le motif de masque (P).
PCT/KR2019/003281 2018-03-30 2019-03-21 Procédé de fabrication de masque, substrat tampon destiné à supporter un masque et procédé de fabrication associé WO2019190121A1 (fr)

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KR20180037583 2018-03-30
KR10-2018-0037583 2018-03-30
KR1020180123056A KR102028639B1 (ko) 2018-03-30 2018-10-16 마스크의 제조 방법, 마스크 지지 버퍼기판과 그의 제조 방법
KR10-2018-0123056 2018-10-16

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CN111224019B (zh) * 2018-11-23 2023-05-02 Tgo科技株式会社 掩模支撑模板和其制造方法及掩模与框架连接体的制造方法
KR20210065255A (ko) * 2019-11-26 2021-06-04 삼성디스플레이 주식회사 증막 마스크, 이를 이용한 디스플레이 장치의 제조 방법 및 디스플레이 장치
CN114481018B (zh) * 2020-10-23 2024-08-09 悟劳茂材料公司 掩模制造方法
CN116285542A (zh) * 2023-03-16 2023-06-23 咸宁南玻节能玻璃有限公司 可撕遮掩膜涂料及其制备方法、利用可撕遮掩膜涂料制备镀膜图案玻璃的方法

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JP2002220656A (ja) * 2000-11-22 2002-08-09 Sanyo Electric Co Ltd 蒸着用マスクおよびその製造方法
JP2009052072A (ja) * 2007-08-24 2009-03-12 Dainippon Printing Co Ltd 蒸着マスク、蒸着マスク装置、蒸着マスクの製造方法、蒸着マスク装置の製造方法、および、蒸着マスク用シート状部材の製造方法
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