WO2022163408A1 - 基板処理システム及び状態監視方法 - Google Patents
基板処理システム及び状態監視方法 Download PDFInfo
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- WO2022163408A1 WO2022163408A1 PCT/JP2022/001413 JP2022001413W WO2022163408A1 WO 2022163408 A1 WO2022163408 A1 WO 2022163408A1 JP 2022001413 W JP2022001413 W JP 2022001413W WO 2022163408 A1 WO2022163408 A1 WO 2022163408A1
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- substrate processing
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- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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Definitions
- the present disclosure relates to a substrate processing system and a state monitoring method.
- Patent Document 1 discloses a processing container in which a substrate is accommodated and whose interior can be evacuated, a lower electrode provided in the processing container on which the substrate transferred into the processing container by a transfer device is placed, and a lower electrode.
- a plasma etching apparatus having a focus ring provided to surround the periphery of the plasma etching apparatus is disclosed.
- the technology according to the present disclosure monitors the temperature inside the substrate processing apparatus without changing the configuration of the substrate processing apparatus.
- One aspect of the present disclosure is a substrate processing system, comprising: a substrate processing apparatus having a substrate loading/unloading port for performing a predetermined process on a substrate; a substrate transport mechanism connected to the loading/unloading port for loading/unloading a substrate to/from the substrate processing apparatus; a thermal image generating unit provided in the substrate transport mechanism for generating a thermal image; and a device, wherein the control device causes the opening/closing mechanism to open the loading/unloading port at least one of timing before and after the substrate processing apparatus performs the predetermined processing, thereby generating the thermal image.
- the unit generates an in-apparatus thermal image, which is a thermal image showing the temperature distribution inside the substrate processing apparatus.
- the temperature inside the substrate processing apparatus can be monitored without changing the configuration of the substrate processing apparatus.
- FIG. 1 is a plan view showing an outline of a configuration of a wafer processing system as a substrate processing system according to this embodiment;
- FIG. It is a longitudinal cross-sectional view which shows the outline of a structure of a processing apparatus. It is a side view which shows the structure of a wafer transfer mechanism typically.
- FIG. 4 is a diagram showing an example of the position of a thermography camera when generating an in-device thermal image;
- FIG. 4 is a functional block diagram of a control unit of a control unit for monitoring temperature of a processing unit;
- FIG. 5 is a diagram for explaining an example of a jig used for generating an in-apparatus thermal image;
- FIG. 11 is a side view showing another example of a jig used for generating an in-apparatus thermal image;
- FIG. 10 is a diagram for explaining another example of the installation position of the thermography camera;
- substrates such as semiconductor wafers (hereinafter referred to as "wafers") are subjected to predetermined processing such as film formation processing and etching processing by a substrate processing apparatus.
- the temperature of the members constituting this substrate processing apparatus is adjusted to a desired temperature during the above-described predetermined processing.
- the temperature of the stage on which the substrate is placed, the temperature of the wall of the processing container housing the stage, and the like are adjusted to desired temperatures.
- the reason why such temperature control is performed is that the temperature of the stage and the like affect the result of the predetermined processing.
- the processing container of the existing substrate processing apparatus is not provided with a monitoring window, ie, a view port for monitoring the temperature inside the processing apparatus. If this viewport is added to the processing container, the state of the processing space within the processing container will change significantly, requiring a drastic review of the processing conditions.
- the technology according to the present disclosure monitors the temperature inside the substrate processing apparatus without changing the configuration of the substrate processing apparatus.
- FIG. 1 is a plan view showing a schematic configuration of a wafer processing system 1 as a substrate processing system according to this embodiment.
- the wafer processing system 1 shown in FIG. 1 performs predetermined processing such as film formation processing, diffusion processing, and etching processing on a wafer W as a substrate under reduced pressure.
- This wafer processing system 1 comprises a carrier station 10 into which a carrier C capable of accommodating a plurality of wafers W is loaded and unloaded, and a processing station 11 equipped with a plurality of various processing devices for performing predetermined processing on the wafers W under reduced pressure. It has an integrally connected configuration.
- the carrier station 10 and the processing station 11 are linked via two loadlock devices 12,13.
- the load-lock devices 12 and 13 have load-lock chambers 12a and 13a that are configured to switch between an atmospheric pressure state and a vacuum state.
- the load lock devices 12 and 13 are provided so as to connect an atmospheric pressure transfer device 20 and a vacuum transfer device 30, which will be described later.
- the carrier station 10 has an atmospheric pressure transfer device 20 and a carrier mounting table 21 .
- the carrier station 10 may further be provided with an orienter (not shown) for adjusting the orientation of the wafer W.
- FIG. 1 A schematic diagram of a carrier station 10 .
- the atmospheric pressure transfer device 20 has an atmospheric transfer chamber 22 whose interior is under atmospheric pressure.
- the atmosphere transfer chamber 22 is connected to the load lock chambers 12a, 13a of the load lock devices 12, 13 via gate valves G1, G2.
- a transfer mechanism 23 is provided in the atmospheric transfer chamber 22 .
- the transfer mechanism 23 is configured to transfer the wafer W between the load lock chambers 12a and 13a under atmospheric pressure.
- the transport mechanism 23 has a transport arm 23a, and the transport arm 23a is composed of, for example, a multi-joint arm having a wafer holder for holding the wafer W at its tip.
- the transport mechanism 23 transports the wafer W while holding it by a transport arm 23a.
- the carrier mounting table 21 is provided on the opposite side of the load lock devices 12 and 13 in the atmospheric pressure transfer device 20 .
- a plurality of carriers C for example three, can be placed on the carrier table 21 .
- the wafer W in the carrier C mounted on the carrier mounting table 21 is carried in and out of the atmospheric transfer chamber 22 by the transfer arm 23 a of the transfer mechanism 23 of the atmospheric pressure transfer device 20 .
- the processing station 11 has a vacuum transfer device 30 and processing devices 40-43.
- the vacuum transfer device 30 has a vacuum transfer chamber 31 whose interior is kept in a reduced pressure state (vacuum state).
- the vacuum transfer chamber 31 is connected to the load lock chambers 12a, 13a of the load lock devices 12, 13 via gate valves G3, G4. Further, the vacuum transfer chamber 31 is connected to vacuum processing chambers 44 to 47, which will be described later, through gate valves G5 to G8.
- a wafer transfer mechanism 32 as a substrate transfer mechanism for transferring the wafer W is provided in the vacuum transfer chamber 31 .
- the wafer transport mechanism 32 loads and unloads the wafers W from the processing apparatuses 40 to 43 through a loading/unloading port 100a, which will be described later.
- the wafer transfer mechanism 32 has a transfer arm 32a. The details of the configuration of the wafer transfer mechanism 32 will be described later.
- the processing apparatuses 40 to 43 perform predetermined processing such as film formation processing, diffusion processing, and etching processing on the wafer W under reduced pressure.
- the processing apparatuses 40 to 43 are assumed to perform an etching process using plasma.
- the processing apparatuses 40 to 43 respectively have vacuum processing chambers 44 to 47 in which the wafer W is subjected to the above-described etching process under reduced pressure.
- the wafer processing system 1 includes a control device 50 .
- the control device 50 has a control section 51 and a display section 52 as a notification section.
- the control unit 51 is composed of a computer having a processor such as a CPU and a memory, and has a storage unit (not shown) that stores various information.
- the storage unit stores a program for controlling wafer processing in the wafer processing system 1 and a program for monitoring the temperature inside the processing apparatuses 40 to 43 .
- the program may be recorded in a computer-readable storage medium and installed in the control device 50 from the storage medium.
- the storage medium may be temporary or non-temporary. Part or all of the program may be realized by dedicated hardware (circuit board).
- the display unit 52 displays various information, and is configured by a display device such as a liquid crystal display or an organic display.
- FIG. 2 is a longitudinal sectional view showing an outline of the configuration of the processing device 40. As shown in FIG.
- the processing apparatus 40 includes a processing container 100, a gas supply section 120, an RF (Radio Frequency) power supply section 130, and an exhaust system 140. Furthermore, the processing device 40 includes a support base 101 and a showerhead 102 .
- the processing container 100 is a container whose inside can be depressurized, and constitutes a vacuum processing chamber 44 .
- the processing container 100 has, for example, a substantially cylindrical shape.
- a loading/unloading port 100a for the wafer W is formed in the side wall of the processing container 100, and a gate valve G5 as an opening/closing mechanism is provided at the loading/unloading port 100a so as to open and close the loading/unloading port 100a.
- a heater 100 b is provided as a temperature control unit for controlling the temperature of the side wall of the processing container 100 .
- the heater 100b is provided along the outer surface of the side wall of the processing container 100, for example.
- the support table 101 is arranged in the lower region of the plasma processing space 100 s inside the processing container 100 .
- the support table 101 is configured to support the wafer W in the plasma processing space 100s.
- the support 101 includes a lower electrode 103 , an electrostatic chuck 104 , an insulator 105 and lifting pins 106 .
- the lower electrode 103 is made of a conductive material such as aluminum.
- the electrostatic chuck 104 is provided on the lower electrode 103 and attracts and holds the wafer W by electrostatic force.
- the electrostatic chuck 104 has a mounting portion 104a in the center on which the wafer W is mounted.
- the top surface of the mounting portion 104a is formed higher than the top surface of the outer peripheral portion.
- a focus ring 107 is mounted on the upper surface of the outer peripheral portion surrounding the mounting portion 104 a of the electrostatic chuck 104 .
- the focus ring 107 is an annular member arranged so as to surround the wafer W mounted on the mounting portion 104a of the electrostatic chuck 104, and improves the uniformity of, for example, plasma processing (plasma etching processing in this example).
- plasma processing plasma etching processing in this example.
- the focus ring 107 is made of a material appropriately selected according to the plasma processing to be performed, and is made of silicon, for example.
- the electrostatic chuck 104 has a configuration in which an electrode 108 is sandwiched between insulating materials made of an insulating material.
- a DC voltage is applied to the electrode 108 from a DC power supply (not shown).
- the wafer W is attracted and held on the upper surface of the mounting portion 104 a of the electrostatic chuck 104 by the electrostatic force generated thereby.
- a heater 109 as a temperature control unit for controlling the temperature of the electrostatic chuck 104 is embedded below the electrode 108 in the electrostatic chuck 104 .
- the heater 109 adjusts the temperature of the wafer W held by the electrostatic chuck 104 by adjusting the temperature of the electrostatic chuck 104 .
- the heater 109 is configured to be able to independently adjust the temperature of each of a plurality of regions on the wafer W in the radial direction.
- the heater 109 includes, for example, a heater that heats a central region of the electrostatic chuck 104 in plan view, and a plurality of annular heaters arranged in order from the central region in plan view toward the outside in the radial direction of the electrostatic chuck 104 . and a heater for independently heating each of the regions.
- insulator 105 supports lower electrode 103 .
- the insulator 105 is, for example, a cylindrical member having an outer diameter equal to that of the lower electrode 103 , made of ceramic or the like, and supports the peripheral side of the lower electrode 103 .
- the elevating pin 106 is a columnar member that elevates so as to protrude from the upper surface of the mounting portion 104a of the electrostatic chuck 104, and is made of ceramic, for example. Three or more elevating pins 106 are provided at intervals in the circumferential direction of the electrostatic chuck 104, specifically along the circumferential direction of the upper surface of the mounting portion 104a.
- the elevating pins 106 are connected to an elevating mechanism 110 that elevates the elevating pins 106 .
- the elevating mechanism 110 includes, for example, a support member 111 that supports the plurality of elevating pins 106, and a driving unit 112 that generates a driving force for elevating the supporting member 111 and elevates the plurality of elevating pins 106.
- the driving unit 112 has an actuator such as a motor that generates the driving force.
- the lifting pin 106 is inserted through a through hole 113 extending downward from the mounting portion of the electrostatic chuck 104 to the bottom surface of the lower electrode 103 .
- the upper end surfaces of the lifting pins 106 support the back surface of the wafer W when the lifting pins 106 are lifted.
- the shower head 102 functions as an upper electrode, and also functions as a shower head that supplies the processing gas from the gas supply unit 120 to the plasma processing space 100s.
- the shower head 102 is arranged above the support base 101 and forms part of the top of the processing container 100 .
- the shower head 102 also has an electrode plate 114 arranged facing the inside of the processing vessel 100 and a support 115 provided above the electrode plate 114 . Note that the shower head 102 is supported above the processing container 100 via an insulating shielding member 116 .
- a plurality of discharge holes 114a are formed in the electrode plate 114 at equal intervals, for example.
- the ejection holes 114a eject a processing gas or the like into the plasma processing space 100s. Specifically, the discharge hole 114a discharges the processing gas toward the wafer W attracted and held by the electrostatic chuck 104 during the plasma etching process. Further, the discharge hole 114 a discharges cleaning gas toward the electrostatic chuck 104 when cleaning the processing apparatus 40 .
- the electrode plate 114 is made of silicon, for example.
- the support 115 detachably supports the electrode plate 114 and is made of a conductive material such as aluminum.
- a gas diffusion space 115 a is formed inside the support 115 . From the gas diffusion chamber 115a, a plurality of gas communication holes 115b communicating with the discharge holes 114a are formed.
- the gas supply unit 120 includes one or more gas supply sources 121 and one or more flow controllers 122 .
- the gas supply unit 120 supplies, for example, one or more processing gases or one or more cleaning gases from corresponding gas supply sources 121 to the gas diffusion chamber 115a via flow rate controllers 122 corresponding to each.
- Each flow controller 122 is, for example, a pressure-controlled flow controller.
- the processing gas from the gas supply source 121 selected from one or more gas supply sources 121 is supplied to the gas diffusion chamber 115a via the flow controller 122. Then, the processing gas supplied to the gas diffusion chamber 115a is dispersed in the plasma processing space 100s in the form of a shower through the gas flow hole 115b and the discharge hole 114a.
- the processing apparatus 40 is configured such that the flow rate of the processing gas supplied from the shower head 102 can be independently adjusted in each of a plurality of regions in the radial direction of the wafer W.
- the gas diffusion chamber 115a is divided into three or more in the radial direction, and adjacent gas diffusion chambers 115a are separated by partition walls.
- the pressure of the processing gas supplied to the chamber 115a is individually adjustable.
- the RF power supply unit 130 includes, for example, two RF generators 131a, 131b and two matching circuits 132a, 132b.
- the RF generators 131a and 131b are connected to the lower electrode 103 through matching circuits 132a and 132b, respectively, and supply RF power to the lower electrode.
- the RF generator 131a generates and supplies RF power for plasma generation.
- the frequency of the RF power from the RF generator 131a is, for example, 27 MHz to 100 MHz.
- the matching circuit 132a has a circuit for matching the output impedance of the RF generator 131a and the input impedance of the load (lower electrode 103) side.
- the RF generator 131b generates and supplies RF power (high frequency bias power) for attracting ions to the wafer W.
- the frequency of the RF power from the RF generator 131b is, for example, 400 kHz to 13.56 MHz.
- the matching circuit 132b has a circuit for matching the output impedance of the RF generator 131b and the input impedance of the load (lower electrode 103) side.
- the exhaust system 140 exhausts the inside of the plasma processing space 100s, and has a vacuum pump.
- the exhaust system 140 is connected to an exhaust port 100 c provided at the bottom of the processing container 100 .
- the configuration of the processing devices 41 to 43 is the same as the configuration of the processing device 40, so the description thereof will be omitted.
- FIG. 3 is a side view schematically showing the structure of the wafer transfer mechanism 32.
- FIG. 4 is a diagram showing an example of the position of a thermography camera 300, which will be described later, when generating an in-device thermal image, which will be described later.
- the wafer transfer mechanism 32 has a transfer arm 32a and a base 32b, and is configured to be able to transfer the wafer W while holding it by the transfer arm 32a.
- the number of transfer arms provided in the wafer transfer mechanism 32 may be plural.
- the transfer arm 32a is composed of, for example, a multi-joint arm.
- the base 32b pivotally supports the base end side of the transfer arm 32a.
- the transfer arm 32a has a first joint arm 201, a second joint arm 202, and a holding arm 203 as a substrate holding portion for holding the wafer W.
- the base end side of the first joint arm 201 is connected to the base 32b so as to be rotatable around the vertical axis.
- the second joint arm 202 is connected to the distal end side of the first joint arm 201 so as to be rotatable around the vertical axis.
- the holding arm 203 is connected to the distal end side of the second joint arm 202 so as to be rotatable around the vertical axis.
- the base 32b is provided with a drive unit 32c that drives the transfer arm 32a to move up and down, rotate, and expand and contract.
- the driving unit has an actuator such as a motor as a driving source for generating a driving force for raising and lowering the transport arm 32a, a driving force for horizontally rotating the transport arm 32a, and a driving force for horizontally expanding and contracting the transport arm 32a. .
- the holding arm 203 has a base portion 203a having a hollow interior on the base end side, and a fork 203b for holding the wafer W on the tip end side.
- the fork 203b moves up and down, and as the transport arm 32a rotates or expands and contracts, the fork 203b moves in the horizontal direction.
- the transfer arm 32a is positioned inside the vacuum transfer chamber 31, which is in the vacuum atmosphere, and the base 32b is provided in the space below the vacuum transfer chamber 31, which is in the atmosphere.
- the insides of the base 32b, the first joint arm 201 and the second joint arm 202 are all hollow like the base portion 203a of the holding arm 203 on the proximal end side.
- the space inside the root portion 203a of the holding arm 203 communicates with the space inside the base 32b, which is the atmosphere, through the insides of the first joint arm 201 and the second joint arm 202. As shown in FIG.
- the wafer transfer mechanism 32 configured as described above is controlled by a transfer control section 51b of the controller 50, which will be described later.
- the wafer transport mechanism 32 is provided with a thermography camera 300 as a thermal image generating section.
- Thermography camera 300 produces a thermal image showing temperature distribution.
- the thermography camera 300 generates an in-apparatus thermal image, which is a thermal image showing the temperature distribution inside each of the processing apparatuses 40 to 43 (specifically, the inside of the processing container 100) that is subject to temperature monitoring.
- the thermography camera 300 generates an in-apparatus thermal image including a thermal image of a temperature control target (for example, the side wall of the processing vessel 100 and the electrostatic chuck 104) in each of the processing apparatuses 40-43.
- the thermography camera 300 is controlled by a camera control section 51c of the control device 50, which will be described later.
- a thermal image generated by the thermography camera 300 is output to the control device 50 by wireless communication or wired communication, for example.
- the thermography camera 300 has, for example, an array sensor unit (not shown) in which sensors for detecting infrared rays are arranged in an array. Further, the thermography camera 300 is provided, for example, inside the root portion 203a of the holding arm 203, which communicates with the space inside the base 32b and becomes an atmospheric atmosphere. A window 203c for the thermography camera 300 is provided on the side wall of the base portion 203a on the fork 203b side.
- thermography camera 300 is positioned inside the vacuum transfer chamber 31 instead of inside the processing apparatus 40 as shown in FIG. is detected, and an internal thermal image of the processing device 40 is generated based on the detection result.
- the temperature inside each of the processing apparatuses 40 to 43 is monitored by monitoring the internal thermal images of the processing apparatuses 40 to 43 generated by the thermography camera 300, respectively.
- FIG. 5 is a functional block diagram of the control unit 51 of the control device 50 for monitoring the temperatures within the processing devices 40-43.
- each function of the control unit 51 will be described mainly by taking processing related to the processing device 40 as an example. , so the description thereof is omitted.
- the control unit 51 includes an opening/closing control unit 51a, a transport control unit 51b, a camera control unit 51c, and a camera control unit 51c, which are realized by a processor such as a CPU reading out and executing a program stored in a storage unit.
- An acquisition unit 51d, a temperature control unit 51e, a necessity determination unit 51f, a display control unit 51g, and a reference acquisition unit 51h are provided.
- the opening/closing control unit 51a controls the operation of the gate valves G1 to G7 to open/close the loading/unloading port 100a.
- the opening/closing control unit 51a controls a driving unit (not shown) that drives the opening/closing of the gate valve G5 so that the gate valve G5 is in an open state when an internal thermal image of the processing apparatus 40 is generated.
- the transfer control unit 51b controls the transfer mechanism 23 and the wafer transfer mechanism 32. For example, when generating an internal thermal image of the processing apparatus 40 , the transport control unit 51 b performs transport so that the thermographic camera 300 and the window 203 c provided on the holding arm 203 face the carry-in/out port 100 a of the processing apparatus 40 . It controls the drive section 32c that drives the arm 32a.
- the camera control unit 51c controls generation of a thermal image by the thermography camera 300.
- the acquisition unit 51d acquires a thermal image generated by the thermography camera 300, and particularly acquires an internal thermal image of the processing device 40 generated by the thermography camera 300.
- the obtaining unit 51d opens the loading/unloading port 100a of the processing device 40 under the control of the opening/closing control unit 51a at a timing before the processing device 40 performs etching processing, ie, predetermined processing.
- the acquisition unit 51d causes the thermography camera 300 to generate an in-device thermal image of the processing device 40 under the control of the transport control unit 51b and the camera control unit 51c, and acquires it.
- the in-apparatus thermal image acquired by the acquisition unit 51d is stored in a storage unit (not shown).
- the “in-apparatus thermal image” basically means an in-apparatus thermal image generated and obtained at a timing before performing the above-described predetermined processing.
- the temperature control unit 51e controls the heater 100b for the processing vessel 100 of the processing apparatus 40 and the heater 109 for the electrostatic chuck 104 of the processing apparatus 40. Specifically, the temperature control unit 51e controls the heaters 100b and 109 based on the internal thermal image of the processing apparatus 40 so that the temperature distribution in the processing apparatus 40 becomes a desired distribution.
- the temperature control unit 51e Based on the measurement result of a temperature sensor (not shown) that measures the temperature of the side wall of the processing container 100 of the processing apparatus 40 and the internal thermal image of the processing apparatus 40 acquired by the acquisition unit 51d, the temperature control unit 51e The heater 100b for the processing vessel 100 of the processing apparatus 40 is controlled. Specifically, for example, it is as follows.
- the temperature control unit 51e first determines whether or not the surface temperature of the side wall of the processing container 100 on the side of the processing space 100s (hereinafter referred to as the inner wall surface temperature) is appropriate based on the internal thermal image of the processing device 40. do. A specific example of this determination method will be described later. If the surface temperature of the inner wall surface of the processing container 100 is appropriate, the temperature control unit 51e controls the heater so that the sidewall of the processing container 100 reaches the set temperature based on the measurement result of the temperature sensor (not shown). 100b. On the other hand, if the inner wall surface temperature of the processing container 100 is not appropriate, the temperature controller 51 e corrects the set temperature of the side wall of the processing container 100 .
- the temperature of the inner wall surface of the processing vessel 100 indicated by the internal thermal image of the processing apparatus 40 (which may be an average temperature or a maximum temperature) is a reference value (hereinafter referred to as a “side wall reference value”). ), the temperature control unit 51e corrects the set temperature of the side wall of the processing container 100 to be lower. After that, the temperature control unit 51e controls the heater 100b based on the measurement result of the temperature sensor (not shown) so that the side wall of the processing container 100 reaches the corrected preset temperature.
- the temperature control of the side wall of the processing container 100 described above may be performed for each region when the side wall is divided into a plurality of regions and each region is provided with an independently controllable heater 100b. .
- the distribution of the inner wall surface temperature of the processing container 100 can be a desired temperature distribution.
- Whether or not the inner wall surface temperature of the processing container 100 is appropriate is determined, for example, based on whether the inner wall surface temperature of the processing container 100 indicated by the internal thermal image of the processing apparatus 40 is higher than the aforementioned reference value for side walls. done. Further, the above determination is, for example, a model for determining suitability of the inner wall surface temperature of the processing container 100 from a thermal image of the processing apparatus 40 created in advance by machine learning or the like (hereinafter referred to as “side wall suitability determination model”). can be done on the basis of
- the temperature control unit 51e is based on the measurement result of a temperature sensor (not shown) that measures the temperature of the electrostatic chuck 104 of the processing device 40 and the internal thermal image of the processing device 40 acquired by the acquisition unit 51d. , controls the heater 109 for the electrostatic chuck 104 of the processing device 40 . Specifically, for example, it is as follows.
- the temperature control unit 51e first determines whether or not the surface temperature of the electrostatic chuck 104 on the processing space 100s side (hereinafter referred to as upper surface temperature) is appropriate based on the internal thermal image of the processing apparatus 40 . A specific example of this determination method will be described later. If the upper surface temperature of the electrostatic chuck 104 is appropriate, the temperature control unit 51e controls the heater 109 based on the measurement result of the temperature sensor (not shown) so that the electrostatic chuck 104 reaches the set temperature. do. On the other hand, if the upper surface temperature of electrostatic chuck 104 is not appropriate, temperature control unit 51 e corrects the set temperature of electrostatic chuck 104 .
- the temperature control unit 51e corrects the set temperature of the electrostatic chuck 104 to be lower. After that, the temperature control unit 51e controls the heater 109 based on the measurement result of the temperature sensor (not shown) so that the electrostatic chuck 104 reaches the corrected set temperature.
- the above temperature control of the electrostatic chuck 104 is performed for each region when the electrostatic chuck 104 is divided into a plurality of regions and each region is provided with an independently controllable heater 109 . good too. Thereby, the distribution of the upper surface temperature of the electrostatic chuck 104 can be made into a desired temperature distribution.
- Whether or not the upper surface temperature of the electrostatic chuck 104 is appropriate is determined, for example, based on whether or not the upper surface temperature of the electrostatic chuck 104 indicated by the in-apparatus thermal image of the processing apparatus 40 is higher than the chuck reference value described above. done. Further, the above determination is a model for determining suitability of the upper surface temperature of the electrostatic chuck 104 from a thermal image inside the processing apparatus 40, which is created in advance by machine learning or the like (hereinafter referred to as a “chuck suitability determination model”). can be done on the basis of
- the inner wall surface temperature distribution of the processing container 100 and the upper surface temperature distribution of the electrostatic chuck 104 are set to the desired temperature distribution, so that the temperature distribution in the entire processing apparatus 40 is set to the desired temperature distribution. be able to.
- the necessity determination unit 51f determines whether maintenance of the processing device 40 is necessary based on the internal thermal image of the processing device 40 acquired by the acquisition unit 51d. For example, the necessity determination unit 51f creates a model (hereinafter referred to as a necessity determination model) for determining whether or not maintenance of the processing device 40 is necessary from an internal thermal image of the processing device 40, which is created in advance by machine learning or the like. Based on the internal thermal image of the processing device 40 acquired by the acquiring unit 51d, whether or not maintenance of the processing device 40 is necessary is determined. Note that the in-apparatus thermal image used for determining whether or not maintenance is necessary may be one, or may be a plurality of temporally consecutive in-apparatus thermal images.
- the necessity determining unit 51f may determine that the processing device 40 requires maintenance when the temperature indicated by the internal thermal image of the processing device 40 exceeds a threshold value. For example, the necessity determination unit 51f divides the internal thermal image of the processing device 40 into a plurality of regions, and if the temperature indicated by any one or more regions exceeds a threshold value, maintenance of the processing device 40 is required. I judge.
- maintenance of the processing apparatus 40 refers to maintenance of members constituting the processing apparatus 40, specifically, maintenance of the sidewall of the processing container 100, maintenance of the electrostatic chuck 104, and maintenance of the shower head 102. good too.
- the necessity determination unit 51f determines the inner wall surface temperature of the side wall (which may be the average temperature and may be the maximum temperature) exceeds a threshold value (threshold value for side wall), it is determined whether maintenance of the side wall of the processing container 100 is necessary. For example, when the threshold value is exceeded, the necessity determination unit 51f determines that maintenance of the side wall of the processing container 100 is necessary.
- the necessity determination unit 51f determines that the upper surface temperature of the electrostatic chuck 104 indicated by the portion corresponding to the electrostatic chuck 104 in the thermal image of the processing apparatus 40 acquired by the acquisition unit 51d exceeds the threshold (for chucking). threshold value), it is determined whether maintenance of the electrostatic chuck 104 is necessary. Further, the necessity determining unit 51f determines that the lower surface temperature of the showerhead 102 indicated by the part corresponding to the showerhead 102 in the thermal image of the processing device 40 acquired by the acquiring unit 51d exceeds the threshold (threshold for showering). It is determined whether maintenance of the shower head 102 is necessary based on whether or not it exceeds.
- the temperature of the shower head 102 is raised by heat input from the plasma generated in the plasma processing space 100s. Also, the degree of temperature rise of the shower head 102 changes depending on the degree of wear (specifically, changes in the surface state of the shower head 102 and changes in the thickness of the shower head 102). Therefore, as described above, the necessity determination unit 51f determines necessity of maintenance of the shower head 102 based on the in-device image of the processing device 40 .
- control unit 51 determines from the in-apparatus thermal image in the processing apparatus 40 that the temperature indicated by the in-apparatus thermal image exceeds the threshold and the difference from the threshold is the largest.
- a determination unit (not shown) may be provided that identifies a portion and determines a component of the processing device 40 corresponding to the portion to be a component to be maintained.
- the display control section 51g controls the display section 52 .
- the display control unit 51g controls the display unit 52 to notify that effect.
- the display control unit 51g is configured to display a message prompting replacement or cleaning of the member along with this fact.
- the display unit 52 may be controlled.
- the reference acquisition unit 51h acquires the side wall reference value, the side wall applicability determination model, the chuck reference value, and the chuck applicability determination model for the processing apparatus 40, which are used in the temperature control unit 51e. These acquisitions are performed, for example, as follows. That is, when the wafer processing system 1 is started up, each of the plurality of wafers W is subjected to a predetermined process, namely an etching process, in the processing apparatus 40 . Then, for each wafer W, at the timing before the predetermined processing, the thermographic camera 300 is used to generate a thermal image of the inside of the processing device 40, and the image is stored in a storage unit (not shown).
- the reference acquisition unit 51h calculates the side wall reference value and the chuck reference value based on the thermal image in the processing apparatus 40 for each wafer W accumulated as described above and the processing result for each wafer W. Then, a side wall applicability determination model and a chuck applicability determination model are created by learning and acquired.
- the processing result for each wafer W is input from the outside through an input means (not shown) such as a keyboard or an external interface such as a network interface.
- the reference acquisition unit 51h acquires the necessity determination model, the side wall threshold value, the chuck threshold value, and the shower threshold value, which are used by the necessity determination unit 51f. These can be obtained, for example, by the same method as the chuck suitability determination model, side wall reference values, and the like.
- the threshold for use is stored in advance in a storage unit (not shown).
- the side wall reference values and side wall applicability determination model calculated or created by the reference acquisition unit 51 h using the processing device 40 may be applied as the side wall reference values and side wall applicability determination model for the processing device 41 .
- the side wall reference values and the side wall suitability determination model for the processing equipment 40 are calculated or created in advance outside the wafer processing system 1 based on information obtained by an evaluator having the same configuration as the processing equipment 40, and are controlled. It may be stored in advance in a storage unit (not shown) of unit 51 . The same applies to the reference value for chuck, suitability determination model for chuck, necessity determination model, threshold value for side wall, threshold value for chuck, and threshold value for shower.
- control unit 51 may include an abnormality determination unit (not shown) that determines an abnormality in the processing device 40 based on the internal thermal image of the processing device 40 acquired by the acquisition unit 51d.
- the “abnormality of the processing device 40 ” may be an abnormality of a member constituting the processing device 40 .
- the display control unit 51g may control the display unit 52 so as to notify the effect when the abnormality determination unit determines that the processing device 40 has an abnormality. .
- the wafer W is taken out from the carrier C by the transfer arm 23a of the transfer mechanism 23, and the gate valve G1 is opened under the control of the opening/closing control unit 51a. be.
- the wafer W is carried into the load lock device 12 by the transfer arm 23a and transferred to a support portion (not shown) in the load lock device 12.
- the transfer arm 23a is extracted from the load lock device 12, and under the control of the opening/closing control section 51a, the gate valve G1 is closed and the inside of the load lock device 12 is closed. is sealed, and the pressure in the load lock device 12 is reduced to a predetermined pressure or less.
- the acquisition unit 51d acquires an internal thermal image of the processing apparatus 40 .
- the gate valve G5 is opened, the loading/unloading port 100a of the processing apparatus 40 is opened, and the thermography camera 300 is opened under the control of the transport control unit 51b.
- the transport arm 32a is driven so as to face the loading/unloading port 100a via 203c.
- the thermography camera 300 generates an in-device thermal image of the processing device 40
- the acquisition unit 51d acquires the generated in-device thermal image.
- the loading/unloading port 100a of the processing device 40 is closed under the control of the opening/closing control unit 51a.
- the temperature control unit 51 e appropriately corrects the set temperatures of the side wall of the processing container 100 and the electrostatic chuck 104 for the processing apparatus 40 .
- the necessity determination unit 51f determines whether maintenance of the processing device 40 is required.
- the display section 52 displays that the maintenance of the processing apparatus 40 is required. be.
- cleaning gas may be supplied to the processing container 100 of the processing apparatus 40 to perform cleaning.
- the gate valve G3 is opened under the control of the opening/closing control unit 51a, and the transport is stopped. Under the control of the controller 51b, the wafer W is received from a support (not shown) in the load lock device 12 by the fork 203b of the wafer transfer mechanism 32 and taken out of the load lock device 12.
- the gate valve G5 for the processing device 40 is opened.
- the fork 203b holding the wafer W is inserted into the pressure-reduced processing container 100 of the processing apparatus 40 under the control of the transfer control unit 51b. is brought into After that, the elevating pins 106 are lifted and the fork 203b is extracted from the processing container 100, and the wafer W is placed on the electrostatic chuck 104 in the processing container 100 via the elevating pins 106. be.
- the gate valve G5 is closed to seal the processing container 100 of the processing apparatus 40, and the exhaust system 140 evacuates the inside of the processing container 100 to a predetermined degree of vacuum. decompressed. Further, a DC voltage is applied to the electrode 108 of the electrostatic chuck 104, whereby the wafer W is attracted and held by the electrostatic chuck 104 by electrostatic force.
- the processing gas is supplied from the gas supply unit 120 to the plasma processing space 100s through the shower head 102. Further, high-frequency power HF for plasma generation is supplied from the RF power supply unit 130 to the lower electrode 103, thereby exciting the processing gas and generating plasma. At this time, high-frequency power LF for attracting ions is also supplied from the RF power supply unit 130 to the lower electrode 103 . Then, the plasma etching process is applied to the wafer W by the action of the generated plasma.
- the supply of the high frequency power HF and the high frequency power LF from the RF power supply unit 130 and the supply of the processing gas from the gas supply unit 120 are stopped.
- the application of the DC voltage to the electrode 108 is stopped, and the adsorption and holding of the wafer W by the electrostatic chuck 104 is stopped.
- the gate valve G5 of the processing container 100 is opened, the fork 203b is moved into the processing container 100 of the processing apparatus 40, and the lifting pins 106 are moved up and down. Received. Then, the wafer W is unloaded from the processing vessel 100 of the processing apparatus 40 in the reverse order of loading the wafer W into the processing vessel 100 of the processing apparatus 40, and a series of wafer processing is completed.
- thermography camera 300 acquires the internal thermal image of the processing apparatus 40 at the timing before the processing apparatus 40 performs the etching process, that is, the predetermined process.
- the generation timing of the internal thermal image of the processing device 40 may be after the processing device 40 performs the predetermined processing, or may be both before and after the processing device 40 performs the predetermined processing.
- the wafer processing system 1 is provided with the wafer transfer mechanism 32 and includes the thermography camera 300 that generates a thermal image. Further, the control unit 51 opens the loading/unloading port 100a of the processing device 40 by means of the gate valve G5 at least either before or after the processing device 40 performs the above-described predetermined processing, and the thermography is performed.
- the camera 300 generates a thermal image showing the temperature distribution inside the processing device 40 , that is, a thermal image inside the processing device 40 .
- the configuration of the processing device 40 does not need to be changed. Therefore, according to this embodiment, the temperature inside the processing device 40 can be monitored without changing the configuration of the processing device 40 from the existing one.
- thermography camera 300 for monitoring the temperature inside the processing apparatus 40 is positioned inside the vacuum transfer chamber 31 and the loading/unloading port 100a of the processing container 100 is closed, there is no need to provide such a shutter or the like.
- thermography camera 300 is shared between the processing devices 40 to 43 and is not provided individually for each of the processing devices 40 to 43 . Therefore, it is possible to monitor the temperature inside each of the processing apparatuses 40 to 43 while keeping costs down.
- the temperature inside the processing apparatus 40 specifically, the surface temperature of the processing space 100s side of the temperature control target (for example, the side wall of the processing container 100) in the processing apparatus 40 is monitored. Then, based on the monitoring result, the temperature control unit 51e adjusts the temperature control mode of the temperature control target, such as correcting the set temperature of the temperature control target. Therefore, the surface temperature on the side of the processing space 100s to be temperature-controlled can be set to a desired temperature.
- the temperature inside the processing device 40 is monitored, and the necessity determination unit 51f determines whether maintenance of the processing device 40 is necessary based on the monitoring result. Based on this determination result, it is possible to perform replacement and cleaning of the members constituting the processing device 40 at an appropriate timing before an abnormality occurs in the processing device 40 . As a result, it is possible to prevent the processing result from becoming abnormal in the processing device 40 .
- a thermal image of the interior of the processing apparatus 40 is generated and acquired so as to overlook the entire interior of the processing apparatus 40 (specifically, the interior of the processing container 100).
- a single internal thermal image includes information on the temperature distribution of a plurality of members forming the processing apparatus 40 . Therefore, it is possible to determine whether or not maintenance is necessary for all the constituent members of the processing apparatus 40 included in one in-apparatus thermal image based on the in-apparatus thermal image of the one processing apparatus 40 . Therefore, it is possible to shorten the time required for determining whether or not maintenance is necessary.
- the necessity of maintenance, etc. for each area based on the apparatus 40 of the one processing apparatus 40 can be determined. can be determined. Therefore, it is possible to shorten the time required to determine whether or not maintenance is necessary for all areas of the constituent members of the processing device 40 .
- the temperature control unit 51e may compare the internal thermal images of the processing apparatuses 40 to 43 and control the heater 100b for the side wall of the processing container 100 of the processing apparatus 40 based on the comparison result. Specifically, the temperature control unit 51e controls, for example, the temperature indicated by the portion corresponding to the side wall of the processing vessel 100 in the in-apparatus thermal image of the processing apparatus 40 and the temperature of the processing vessel 100 in the in-apparatus thermal images of the processing apparatuses 41 to 43. If there is a difference from the temperature indicated by the portion corresponding to the side wall of the processing apparatus 40, the set temperature of the side wall of the processing container 100 is corrected so as to eliminate this difference. Similarly, the heater 109 for the electrostatic chuck 104 may be controlled based on the result of comparison of thermal images in the processing devices 40-43.
- the acquisition unit 51d acquires an in-apparatus thermal image before or after predetermined processing by the processing apparatuses 40 to 43, and the acquired in-apparatus thermal image is obtained. may be stored in a storage unit (not shown) in association with the processing conditions in the predetermined processing. Then, the control unit 51 extracts, from the accumulated internal thermal images, the internal thermal image and the portion of the internal image in which the temperature changes under the same processing conditions, and the processing units 40 to 40 corresponding to the extracted portions. 43 may be determined as components to be maintained. By notifying the determined constituent members to be maintained through the display unit 52, maintenance of the problematic portion can be urged at an appropriate timing.
- the correlation between the stored thermal images in the apparatus after processing and the processing results is learned in advance by machine learning or the like, and when the processing is actually performed, the control unit 51 detects the thermal images in the apparatus after processing. and the above correlation, it may be determined that there is a possibility that processing has not been performed normally.
- FIG. 6 is a diagram for explaining an example of a jig used for generating an in-apparatus thermal image.
- the thermography camera 300 captures infrared rays radiated from inside the processing apparatus 40 and passing through the loading/unloading port 100a and the window 203c while the thermography camera 300 is not positioned inside the processing apparatus 40 but inside the vacuum transfer chamber 31, for example.
- a thermal image of the inside of the device is generated based on the detection result.
- the shower head 102 may be a blind spot with respect to the thermography camera 300, and the thermal image generated by the thermography camera 300 may not sufficiently reflect the temperature of the shower head 102.
- the jig 400 is configured to be transportable by the wafer transport mechanism 32 and the transport mechanism 23 , and is provided with a reflecting member 401 that reflects infrared rays toward the thermography camera 300 .
- the reflecting member 401 is formed using a material with low infrared emissivity.
- the reflecting member 401 is provided on the upper surface of the jig body 402, and has a reflecting surface 401a that horizontally reflects infrared rays from above when the jig 400 is horizontally supported. .
- the jig 400 when the jig 400 is horizontally supported by the support base 101 or the raised lifting pins 106, the light emitted from the blind spot of the thermography camera 300 in the shower head 102 at the time of generating the captured image inside the apparatus is directed downward.
- the infrared rays are reflected by the reflecting surface 401a and go toward the loading/unloading port 100a.
- This infrared ray enters the vacuum transfer chamber 31 through the loading/unloading port 100a, is incident on the thermographic camera 300 facing the loading/unloading port 100a, and is detected.
- the jig 400 is accommodated in the carrier C, for example, like the wafer W.
- the thermography camera 300 When the thermography camera 300 generates (captures) an internal thermal image of the processing device 40 , the jig 400 is transferred from the carrier C to the load lock chamber 12 a or the load lock chamber 13 a by the transfer mechanism 23 .
- the jig 400 is carried into the processing container 100 of the processing apparatus 40 by the wafer transfer mechanism 32 and is horizontally supported by, for example, the support table 101 or the elevated lifting pins 106 .
- the thermal image of the inside of the processing apparatus 40 is generated by the thermography camera 300 moved to a position facing the loading/unloading port of the processing apparatus 40 in the vacuum transfer chamber 31 instead of inside the processing apparatus 40 .
- the infrared rays emitted from the blind spot of the thermography camera 300 in the shower head 102 and directed downward are reflected by the reflecting surface 401a, enter the thermography camera 300, and are detected. Therefore, the internal thermal image of the processing device 40 generated by the thermography camera 300 reflects the temperature of the blind spot of the shower head 102 . In other words, by using the jig 400, it is possible to monitor the temperature of the blind spot of the shower head 102 as well.
- the jig body 402 is a member that imitates the wafer W, and specifically, is a member that is formed in a disk shape with the same diameter as the wafer W (for example, 300 mm). Further, like the wafer W, the jig body 402 is formed with, for example, a notch (not shown). This notch is used when adjusting the orientation of the jig 400 in order to direct the infrared rays reflected by the reflecting member 401 inside the processing container 100 toward the loading/unloading port 100a.
- a plurality of jigs 400 are prepared, the angles of the reflection surfaces 401a of the reflection members 401 of the jigs 400 are made different from each other, and the thermography camera 300 using each jig 400 captures a thermal image of the inside of the processing device 40. may be generated.
- the temperature monitoring range in the shower head 102 can be widened.
- the temperature monitoring range can be extended to both the central portion and the peripheral portion of the showerhead 102 .
- a plurality of jigs are prepared, the mounting positions of the reflecting members of the jigs 400 are different from each other, and the thermal image of the inside of the processing device 40 is generated by the thermography camera 300 using each jig 400. good too. This also makes it possible to widen the temperature monitoring range in the shower head 102 .
- FIG. 7 is a side view showing another example of a jig used for generating an in-apparatus thermal image.
- a jig 500 in FIG. 7 is configured to be transportable by the wafer transport mechanism 32 and the transport mechanism 23, similarly to the jig 400 in FIG. It is However, the jig 500 differs from the jig 400 in FIG. 6 in that a reflecting member 501 is provided on the lower surface of the jig body 402 so that when the jig 500 is horizontally supported, infrared rays from below are reflected horizontally. It has a reflecting surface 501a that reflects in a direction.
- This jig 500 is used while being horizontally supported by the raised lifting pins 106 when the thermography camera 300 generates a thermal image of the inside of the apparatus.
- the thermography camera 300 By generating a thermal image of the inside of the apparatus with the thermography camera 300 using the jig 500, the temperature of the blind spot from the thermography camera 300 in the vacuum transfer chamber 31 in the electrostatic chuck 104 is reflected in the thermal image of the inside of the apparatus. be able to.
- the jig 500 it is possible to monitor the temperature of the blind spot of the thermography camera 300 in the shower head 102 as well.
- FIG. 8 is a diagram for explaining another example of the arrangement position of the thermography camera.
- the thermography camera 300 is provided inside the root portion 203a on the base end side of the holding arm 203, which is in the atmosphere. If the thermographic camera 300 can operate under reduced pressure, it may be provided at the base of the fork 203b as shown in FIG. Also, the thermography camera 300 may be provided at the tip of the fork 203b as long as it does not interfere with the holding of the wafer W by the fork 203b.
- thermography camera 300 When the thermography camera 300 is provided on the fork 203b in this way, the thermography camera 300 is located inside the processing device 40 under the control of the transport control unit 51b and the camera control unit 51c. Generate an image. As a result, the temperature monitoring range within the processing apparatus 40 can be easily expanded.
- thermography camera 300 when the thermography camera 300 is provided on the fork 203b, the thermography camera 300 may be provided for each monitored object. For example, a total of three thermography cameras 300 may be provided for the side wall of the processing container 100 , the electrostatic chuck 104 and the shower head 102 .
- thermography camera 300 In addition to the thermography camera 300, an imaging device may be provided in the wafer transfer mechanism 32 (specifically, the transfer arm 32a). Then, the control unit 51 selects a portion of the processing device 40 corresponding to a specific portion of the internal thermal image generated by the thermography camera 300 (for example, a portion where the temperature indicated by the image exceeds the threshold for determining the necessity of maintenance). , may be imaged by the imaging device.
- wafer processing system 30 vacuum transfer device 32 wafer transfer mechanisms 40 to 43 processing device 50 control device 100a loading/unloading port 300 thermographic cameras G5 to G8 gate valve W wafer
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Abstract
Description
図1は、本実施形態にかかる基板処理システムとしてのウェハ処理システム1の構成の概略を示す平面図である。
このウェハ処理システム1は、複数のウェハWを収容可能なキャリアCが搬入出されるキャリアステーション10と、減圧下でウェハWに所定の処理を施す複数の各種処理装置を備えた処理ステーション11とを一体に接続した構成を有している。キャリアステーション10と処理ステーション11は、2つのロードロック装置12、13を介して連結されている。
続いて、処理装置40について、図2を用いて説明する。図2は、処理装置40の構成の概略を示す縦断面図である。
さらに、処理容器100に対して、当該処理容器100の側壁の温度を調節する、温度調節部としてのヒータ100bが設けられている。ヒータ100bは例えば処理容器100の側壁の外側面に沿って設けられている。
なお、ヒータ109は、ウェハWの径方向にかかる複数の領域それぞれの温度を独立して調節可能に構成されている。具体的には、ヒータ109は、例えば、静電チャック104の平面視中央の領域を加熱するヒータと、上記平面視中央の領域から静電チャック104の径方向外側に向けて順に並ぶ複数の環状の領域それぞれを独立して加熱するヒータとを有する。
昇降ピン106の上端面は、昇降ピン106が上昇したときにウェハWの裏面を支持する。
第1関節アーム201は、その基端側が基台32bに鉛直軸周りに回転自在に接続されている。
第2関節アーム202は、第1関節アーム201の先端側に鉛直軸周りに回転自在に接続されている。
保持アーム203は、第2関節アーム202の先端側に鉛直軸周りに回転自在に接続されている。
また、サーモグラフィカメラ300は、制御装置50の後述のカメラ制御部51cにより制御される。サーモグラフィカメラ300により生成された熱画像は、例えば無線通信または有線通信により、制御装置50に出力される。
また、サーモグラフィカメラ300は、例えば、基台32bの内部の空間と連通し大気雰囲気となる、保持アーム203の根元部203aの内部に設けられる。根元部203aのフォーク203b側の側壁には、サーモグラフィカメラ300用の窓203cが設けられている。
図5は、処理装置40~43内の温度の監視に関する、制御装置50の制御部51の機能ブロック図である。なお、以下では、制御部51の各機能について、主に処理装置40関する処理を例に説明するが、制御部51の各機能が処理装置41~43に関し行う処理は、処理装置40に関し行う処理と同様であるため、その説明を省略する。
例えば、要否判定部51fは、予め機械学習等により作成された、処理装置40の装置内熱画像から処理装置40のメンテナンスが必要か否かを判定するモデル(以下、要否判定モデル)を用い、取得部51dが取得した処理装置40の装置内熱画像に基づいて、処理装置40のメンテナンスの要否を判定する。なお、メンテナンスの要否の判定に用いる装置内熱画像は1枚であってもよいし、時間的に連続する複数枚の装置内熱画像であってもよい。時間的に連続する複数枚の装置内熱画像を用いれば、処理装置40の内部の経時的な変化から、処理装置40のメンテナンスの要否を判定することができる。
また、要否判定部51fは、処理装置40の装置内熱画像が示す温度が閾値を超えた場合に、処理装置40にメンテナンスが必要と判定してもよい。例えば、要否判定部51fは、処理装置40の装置内熱画像を複数の領域に分割し、いずれか1つまたは複数の領域が示す温度が閾値を超えた場合、処理装置40のメンテナンスが必要と判定する。
例えば、要否判定部51fは、取得部51dが取得した処理装置40の装置内熱画像における処理容器100の側壁に対応する部分が示す、当該側壁の内壁面温度(平均温度であってもよいし最高温度であってもよい。)が、閾値(側壁用閾値)を超えているか否かに基づいて、処理容器100の側壁のメンテナンスの要否を判定する。例えば、閾値を超えている場合、要否判定部51fは処理容器100の側壁のメンテナンスが必要と判定する。
同様に、要否判定部51fは、取得部51dが取得した処理装置40の装置内熱画像における静電チャック104に対応する部分が示す、当該静電チャック104の上面温度が、閾値(チャック用閾値)を超えているか否かに基づいて、静電チャック104のメンテナンスの要否を判定する。
また、要否判定部51fは、取得部51dが取得した処理装置40の装置内熱画像におけるシャワーヘッド102に対応する部分が示す、当該シャワーヘッド102の下面温度が、閾値(シャワー用閾値)を超えているか否かに基づいて、シャワーヘッド102のメンテナンスの要否を判定する。なお、シャワーヘッド102は、プラズマ処理空間100sに生成されたプラズマからの入熱により昇温する。また、シャワーヘッド102は、その消耗度合い(具体的にはシャワーヘッド102の表面状態の変化やシャワーヘッド102の厚みの変化)によって、昇温度合いが変わる。そのため、上述のように、要否判定部51fが、処理装置40の装置内画像に基づいて、シャワーヘッド102のメンテンナンスの要否を判定する。
例えば、表示制御部51gは、要否判定部51fにより処理装置40にメンテナンスが必要と判定された場合に、その旨を報知するよう表示部52を制御する。
なお、静電チャック104等、処理装置40を構成する部材にメンテナンスが必要と判定された場合には、その旨と共に当該部材の交換やクリーニングを促すメッセージが表示されるよう、表示制御部51gが表示部52を制御してもよい。
また、異常判定部を備える場合、表示制御部51gが、異常判定部により処理装置40に異常が生じていると判定された場合に、その旨を報知するよう表示部52を制御してもよい。
以上の例では、処理装置40がエッチング処理すなわち所定の処理を施す前のタイミングで、サーモグラフィカメラ300が処理装置40の装置内熱画像を取得するものとした。しかし、処理装置40の装置内熱画像の生成タイミングは、処理装置40が上記所定の処理を施す後であってもよいし、処理装置40が上記所定の処理を施す前と後の両方であってもよい。
以上のように本実施形態では、ウェハ処理システム1が、ウェハ搬送機構32に設けられ、熱画像を生成するサーモグラフィカメラ300を備える。
また、制御部51が、例えば、処理装置40が上記所定の処理を施す前及び後の少なくともいずれか一方のタイミングで、ゲートバルブG5によって処理装置40の搬入出口100aを開放させた状態で、サーモグラフィカメラ300によって、処理装置40の内部の温度分布を示す熱画像すなわち処理装置40の装置内熱画像を生成させる。そして、この処理装置40の装置内熱画像の生成には、処理装置40の構成の変更は不要である。したがって、本実施形態によれば、処理装置40内の温度を、処理装置40の構成を既存のものから変更せずに監視することができる。
さらに、本実施形態では、サーモグラフィカメラ300が、処理装置40~43間で共通であり、処理装置40~43それぞれに対し個別に設けられていない。したがって、コストを抑えながら、処理装置40~43それぞれの内部の温度を監視することができる。
温度制御部51eは、装置内熱画像を処理装置40~43間で比較し、比較結果に基づいて、処理装置40の処理容器100の側壁に対するヒータ100bを制御してもよい。具体的には、温度制御部51eは、例えば、処理装置40の装置内熱画像における処理容器100の側壁に対応する部分が示す温度と、処理装置41~43の装置内熱画像における処理容器100の側壁に対応する部分が示す温度とに差がある場合、この差がなくなるよう、処理装置40について処理容器100の側壁の設定温度を補正する。
静電チャック104に対するヒータ109についても、同様に、処理装置40~43間の装置内熱画像の比較結果に基づいて制御してもよい。
ウェハ処理システム1でウェハWを連続的に処理する際に、取得部51dが、処理装置40~43による所定の処理前または後に装置内熱画像を取得するようにし、取得された装置内熱画像が、上記所定の処理における処理条件に紐づけて、記憶部(図示せず)に記憶されるようにしてもよい。そして、制御部51が、蓄積された装置内熱画像から、同じ処理条件で温度が変化している装置内熱画像及び当該装置内画像における部分を抽出し、当該部分に対応する処理装置40~43の構成部材を、メンテナンスすべき構成部材に決定してもよい。決定したメンテンナンスすべき構成部材を、表示部52を介して報知すること等により、適切なタイミングで問題個所のメンテナンスを促すことができる。
図6は、装置内熱画像の生成に用いられる治具の一例を説明するための図である。
サーモグラフィカメラ300は、前述のように、例えば、処理装置40内に位置せず真空搬送室31内に位置した状態で、処理装置40の内部から放射され搬入出口100a及び窓203cを通過した赤外線を検出し、その検出結果に基づき、装置内熱画像を生成している。そのため、搬入出口100aの形状や大きさによっては、サーモグラフィカメラ300に対しシャワーヘッド102が死角となり、サーモグラフィカメラ300が生成する装置内熱画像に、シャワーヘッド102の温度が十分反映されない場合がある。
この場合は、例えば、図6に示すような治具400を、処理装置40内に位置させた状態で、装置内熱画像を生成するようにしてもよい。
図の例では、反射部材401は、治具本体402の上面に設けられており、治具400が水平に支持されたときに上方からの赤外線を水平方向に向けて反射する反射面401aを有する。
サーモグラフィカメラ300による処理装置40の装置内熱画像の生成(撮像)の際、治具400は、キャリアCから搬送機構23によりロードロック室12aまたはロードロック室13aに搬送される。その後、治具400は、ウェハ搬送機構32により、処理装置40の処理容器100内に搬入され、例えば支持台101または上昇した昇降ピン106に水平に支持される。この状態で、処理装置40内ではなく真空搬送室31内における処理装置40の搬入出口と対向する位置に移動されたサーモグラフィカメラ300により、処理装置40の装置内熱画像が生成される。この生成の際、上述のように、シャワーヘッド102におけるサーモグラフィカメラ300の死角部分から放射され下方に向かった赤外線は、反射面401aで反射されサーモグラフィカメラ300に入射し検出される。したがって、サーモグラフィカメラ300が生成した処理装置40の装置内熱画像は、シャワーヘッド102における上記死角部分の温度が反映されたものとなる。つまり、治具400を用いれば、シャワーヘッド102における上記死角部分の温度も監視することができる。
また、複数の治具を用意し、各治具400の反射部材の搭載位置を互いに異ならせ、各治具400を用いてサーモグラフィカメラ300により処理装置40の装置内熱画像を生成するようにしてもよい。これによっても、シャワーヘッド102における温度監視範囲を広げることができる。
図7の治具500は、図6の治具400と同様、ウェハ搬送機構32や搬送機構23により搬送可能に構成されており、且つ、サーモグラフィカメラ300に向け赤外線を反射する反射部材501が設けられている。
ただし、治具500は、図6の治具400と異なり、反射部材501が、治具本体402の下面に設けられており、治具500が水平に支持されたときに下方からの赤外線を水平方向に向けて反射する反射面501aを有する。
治具500を用いサーモグラフィカメラ300によって装置内熱画像を生成することにより、静電チャック104における、真空搬送室31内のサーモグラフィカメラ300から死角となる部分の温度を、装置内熱画像に反映させることができる。つまり、治具500を用いれば、シャワーヘッド102におけるサーモグラフィカメラ300の死角部分の温度も監視することができる。
図8は、サーモグラフィカメラの配設位置の他の例を説明するための図である。
以上の例では、サーモグラフィカメラ300は、大気雰囲気である、保持アーム203の基端側の根元部203aの内部に設けられていた。サーモグラフィカメラ300が、減圧下でも動作可能であれば、図8に示すように、フォーク203bの基部に設けてもよい。また、サーモグラフィカメラ300は、フォーク203bによるウェハWの保持を妨げなければ、フォーク203bの先端に設けてもよい。
サーモグラフィカメラ300に加えて、撮像装置をウェハ搬送機構32(具体的には搬送アーム32a)に設けてもよい。
そして、制御部51が、サーモグラフィカメラ300が生成した装置内熱画像の特定の部分(例えば当該画像が示す温度がメンテナンス要否判定用の閾値を超える部分)に対応する、処理装置40の部位を、上記撮像装置で撮像させるようにしてもよい。
30 真空搬送装置
32 ウェハ搬送機構
40~43 処理装置
50 制御装置
100a 搬入出口
300 サーモグラフィカメラ
G5~G8 ゲートバルブ
W ウェハ
Claims (14)
- 基板の搬入出口を有し、基板に対し所定の処理を施す基板処理装置と、
前記搬入出口を開閉する開閉機構を介して前記基板処理装置に接続され、前記搬入出口を介して前記基板処理装置に対し基板を搬入出する基板搬送機構を有する搬送装置と、
前記基板搬送機構に設けられ、熱画像を生成する熱画像生成部と、
制御装置と、を備え、
前記制御装置は、前記基板処理装置が前記所定の処理を施す前及び後の少なくともいずれか一方のタイミングで、前記開閉機構によって、前記搬入出口を開放させ、前記熱画像生成部によって、前記基板処理装置の内部の温度分布を示す熱画像である装置内熱画像を生成させる、基板処理システム。 - 前記制御装置は、前記熱画像生成部を前記搬送装置内に位置させた状態で、前記熱画像生成部によって、前記装置内熱画像を生成させる、請求項1に記載の基板処理システム。
- 前記制御装置は、前記基板搬送機構により搬送可能に構成され且つ前記熱画像生成部に向け赤外線を反射する反射部材を有する治具を、前記基板処理装置内に位置させた状態で、前記熱画像生成部によって、前記装置内熱画像を生成させる、請求項2に記載の基板処理システム。
- 前記制御装置は、前記熱画像生成部を前記基板処理装置内に位置させた状態で、前記熱画像生成部によって、前記装置内熱画像を生成させる、請求項1に記載の基板処理システム。
- 前記基板処理装置は、当該基板処理装置の構成部材の温度を調節する温度調節部を有し、
前記制御装置は、生成された前記装置内熱画像に基づいて、前記温度調節部を制御する、請求項1~4のいずれか1項に記載の基板処理システム。 - 前記温度調節部の温度調節対象は、基板が載置されるステージ及び前記ステージが収容された処理容器の壁の少なくともいずれか一方であり、
前記制御装置は、前記熱画像生成部によって、前記温度調節対象の前記熱画像を含む前記装置内熱画像を生成させる、請求項5に記載の基板処理システム。 - 前記制御装置は、前記温度調節対象の前記熱画像に基づいて、当該温度調節対象の処理空間側の表面温度が所望の温度になるように、前記温度調節部を制御する、請求項6に記載の基板処理システム。
- 前記基板処理装置を複数備え、
前記制御装置は、
前記装置内熱画像を前記基板処理装置毎に取得させ、
前記装置内熱画像を前記基板処理装置間で比較し、比較結果に基づいて、前記温度調節部を制御する、請求項5または6に記載の基板処理システム。 - 前記制御装置は、取得された前記装置内熱画像に基づいて、前記基板処理装置にメンテナンスが必要か否かを判定する、請求項1~8のいずれか1項に記載の基板処理システム。
- 前記制御装置は、取得された前記装置内熱画像に基づいて、前記基板処理装置を構成する部材にメンテナンスが必要か否かを判定する、請求項9に記載の基板処理システム。
- 前記制御装置は、前記装置内熱画像が示す温度が閾値を超えた場合に、前記基板処理装置にメンテナンスが必要と判定する、請求項9または10に記載の基板処理システム。
- 前記制御装置により前記基板処理装置にメンテナンスが必要と判定された場合に報知する報知部をさらに備える、請求項9~11のいずれか1項に記載の基板処理システム。
- 前記基板搬送機構に設けられた撮像装置をさらに備え、
前記制御装置は、前記装置内熱画像の特定の部分に対応する前記基板処理装置の部位を、前記撮像装置で撮像させる、請求項1~12のいずれか1項に記載の基板処理システム。 - 基板に対し所定の処理を施す基板処理装置と搬送装置とを備える基板処理システムにおける、基板処理装置内の温度を監視する方法であって、
前記基板処理システムは、
前記基板処理装置が、基板の搬入出口を有し、
前記搬送装置が、前記搬入出口を開閉する開閉機構を介して前記基板処理装置に接続され、前記搬入出口を介して前記基板処理装置に対し基板を搬入出する基板搬送機構を有し、
前記基板搬送機構に設けられ、熱画像を生成する熱画像生成部をさらに備え、
前記基板処理装置が前記所定の処理を施す前及び後の少なくともいずれか一方のタイミングで、前記開閉機構によって、前記搬入出口を開放させ、前記熱画像生成部によって、前記基板処理装置の内部の温度分布を示す熱画像である装置内熱画像を生成させる工程を含む、温度監視方法。
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JP2010226014A (ja) * | 2009-03-25 | 2010-10-07 | Panasonic Corp | 基板搬送装置 |
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JP2010226014A (ja) * | 2009-03-25 | 2010-10-07 | Panasonic Corp | 基板搬送装置 |
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