WO2022163214A1 - ヒータ制御装置 - Google Patents

ヒータ制御装置 Download PDF

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Publication number
WO2022163214A1
WO2022163214A1 PCT/JP2021/047141 JP2021047141W WO2022163214A1 WO 2022163214 A1 WO2022163214 A1 WO 2022163214A1 JP 2021047141 W JP2021047141 W JP 2021047141W WO 2022163214 A1 WO2022163214 A1 WO 2022163214A1
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WIPO (PCT)
Prior art keywords
temperature
heating element
power
controller
control device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2021/047141
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English (en)
French (fr)
Japanese (ja)
Inventor
成伸 先田
良平 藤見
功一 木村
克裕 板倉
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication date
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Priority to KR1020237025655A priority Critical patent/KR102900018B1/ko
Priority to JP2022578150A priority patent/JP7494946B2/ja
Publication of WO2022163214A1 publication Critical patent/WO2022163214A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0004—Devices wherein the heating current flows through the material to be heated

Definitions

  • the present disclosure relates to heater controllers.
  • This application claims priority based on Japanese Patent Application No. 2021-12977 dated January 29, 2021, and incorporates all the descriptions described in the Japanese application.
  • Patent Document 1 discloses a film forming apparatus for forming a metal thin film on a semiconductor wafer.
  • This film forming apparatus includes a heating means provided on a mounting table, a temperature detecting section for detecting the temperature of the semiconductor wafer placed on the mounting table, a control means for controlling the amount of heat generated by the heating means, and a lower portion of the mounting table. and a support member that supports the
  • the heating means includes a first heater and a second heater for respectively heating the central portion and the peripheral portion of the semiconductor wafer.
  • the control means controls power supplied to the first heater based on the detected temperature value of the central portion of the mounting table. Further, the control means is configured to supply power to the second heater in a predetermined ratio with respect to the power supplied to the first heater.
  • a heater control device of the present disclosure includes a substrate having a disk-like shape, a cylindrical support coaxially attached to the substrate, and a first heater disposed in an area including the center of the substrate. a heating element; at least one second heating element arranged concentrically with the first heating element; a temperature sensor for measuring a first temperature of the first heating element; at least one current sensor for measuring the supplied current; a first temperature regulator for outputting a first control signal such that the first temperature approaches a target temperature; A first power controller controlling a first power supplied to a heating element, a second power controller controlling a second power supplied to the second heating element, and determining the temperature of the second heating element A calculator.
  • the substrate has a first surface on which an object to be heated is placed and a second surface facing the first surface.
  • the tubular support is attached to the second surface.
  • the temperature sensor is arranged inside the tubular support.
  • the second power controller controls the second power using a phase control method so as to achieve a preset ratio with respect to the first power.
  • the calculator obtains the temperature of the second heating element based on the measured value of the at least one current sensor.
  • FIG. 1 is a functional block diagram of a heater control device according to Embodiment 1.
  • FIG. FIG. 2 is a plan view of a substrate showing areas where heat generating elements are arranged.
  • FIG. 3 is a vertical cross-sectional view showing the arrangement of heat generating elements within the substrate.
  • FIG. 4 is an explanatory diagram of the phase control method.
  • FIG. 5 is a flowchart showing a processing procedure up to outputting the second power in the first embodiment.
  • FIG. 6 is a flowchart showing a processing procedure up to outputting the second temperature in the first embodiment.
  • FIG. 7 is a graph showing an example of a temperature profile of a heating element according to Embodiment 1;
  • FIG. 8 is a graph showing an example of the temperature profile of the heating element during temperature maintenance.
  • FIG. 9 is a graph showing an enlarged example of the temperature profile in the processing state in FIG.
  • FIG. 10 is a functional block diagram of a heater control device according to the second embodiment.
  • FIG. 11 is a flowchart showing a processing procedure up to outputting the second power in the second embodiment.
  • FIG. 12 is a plan view of a base material showing an arrangement region of a heating element in Modification 1.
  • FIG. 13 is a vertical cross-sectional view of a base material showing an arrangement region of a heating element in Modification 1.
  • FIG. FIG. 14 is a functional block diagram of a heater control device according to Modification 2.
  • FIG. 15 is a functional block diagram of a heater control device according to Modification 3.
  • FIG. 15 is a functional block diagram of a heater control device according to Modification 3.
  • the power supplied to the first heater is controlled based on the value detected by the temperature detection unit.
  • the second heater is supplied with electric power at a predetermined ratio to the electric power supplied to the first heater, but does not have a temperature detection section for detecting the temperature of the peripheral portion of the wafer. Therefore, it is desired to improve the heat uniformity by grasping the temperature of the second heater.
  • One object of the present disclosure is to provide a multi-zone heater control device capable of grasping the temperature of the zone corresponding to each heating element without providing a temperature sensor for each heating element. .
  • Another object of the present disclosure is to provide a multi-zone heater control device capable of controlling the temperature of a zone corresponding to each heating element without providing a temperature sensor for each heating element. to do.
  • the temperature of the zone corresponding to each heating element can be grasped without providing a temperature sensor for each heating element.
  • a heater control device includes a disk-shaped substrate, a cylindrical support coaxially attached to the substrate, and a center of the substrate. a first heating element arranged in a region containing; at least one second heating element arranged concentrically with the first heating element; a temperature sensor for measuring a first temperature of the first heating element; at least one current sensor for measuring current supplied to at least one second heating element; a first temperature regulator for outputting a first control signal such that the first temperature approaches a target temperature; a first power controller for controlling first power supplied to the first heating element according to a control signal; a second power controller for controlling second power supplied to the second heating element; a calculator for obtaining the temperature of a second heating element, the base material has a first surface on which a heating target is placed and a second surface facing the first surface, and the cylindrical support A body is attached to the second surface, the temperature sensor is located inside the tubular support, and the second power controller is a preset ratio to the first power.
  • the second electric power is controlled by
  • the first temperature of the first heating element is detected by the temperature sensor.
  • the first power supplied to the first heating element is controlled based on the temperature detected by the temperature sensor.
  • the temperature of the second heating element is obtained by the calculator based on the measured value of the current sensor. Therefore, the temperature of the second heating element can be grasped without a temperature sensor for detecting the temperature of the second heating element or the temperature of the zone in which the second heating element is arranged.
  • the second power supplied to the second heating element is controlled to have a preset ratio to the first power. Since the second power is controlled by the phase control method, it can be controlled with high accuracy. As a result, the temperature of the second heating element can also be grasped with high precision.
  • the calculator calculates the temperature of the second heating element using the first temperature, the second voltage of the second heating element, and a predetermined coefficient.
  • the coefficient may be a coefficient representing the relationship between the resistance of the second heating element and the temperature of the second heating element.
  • the resistance of the second heating element can be obtained using the current and the second voltage supplied to the second heating element. Furthermore, the temperature of the second heating element can be obtained by using the coefficient representing the relationship between the resistance of the second heating element and the temperature of the second heating element.
  • the coefficient is selected from a plurality of predetermined coefficients according to the first temperature. It may be a coefficient.
  • the temperature of the second heating element can be determined more accurately by using different coefficients according to the measurement result of the temperature sensor, that is, the first temperature of the first heating element.
  • Electric power is supplied to the second heating element in a predetermined ratio to the electric power supplied to the first heating element. That is, the temperature of the second heating element is related to the temperature of the first heating element.
  • the relationship between the temperature and resistance of the second heating element it is difficult to accurately determine the temperature of the second heating element depending on the temperature range with a coefficient obtained only from the relationship between the resistance at room temperature and the resistance at the maximum temperature. . Therefore, by using different coefficients according to the temperature of the first heating element, the temperature of the second heating element can be calculated more accurately.
  • the plurality of coefficients are calculated when the temperature of the first heating element and the second heating element , at the time of temperature maintenance, and at the time of temperature decrease.
  • the temperature of the second heating element can be obtained with higher accuracy than when the same coefficient is used in each step of raising the temperature of the second heating element, maintaining the temperature, and lowering the temperature.
  • Each of the above stages has a significantly different temperature history. Therefore, it is difficult to accurately obtain the temperature of the second heating element if a common coefficient is used in each of these stages.
  • the amount of temperature change per unit time is small compared to when the temperature is raised or lowered. Therefore, by using different coefficients according to different stages of the process from temperature increase to temperature decrease, the temperature of the second heating element can be obtained with higher accuracy.
  • the coefficient is set to the value that the heating object is placed on the first surface when the temperature is maintained. It may be determined based on the first temperature measured in a state in which the temperature is not
  • the coefficient can be obtained without conducting a preliminary test by placing the object to be heated on the first surface. Therefore, there is no need to prepare an object to be heated in the preliminary test.
  • the preliminary test is a test in which the relationship between the temperature and the resistance of the second heating element is examined by heating the first heating element to the target temperature during temperature maintenance in order to obtain the above coefficient. If the required accuracy of the temperature of the second heating element is emphasized, the object to be heated must be prepared in order to perform a preliminary test by placing the object to be heated on the first surface of the base material. On the other hand, if the preliminary test is performed without placing the object to be heated on the first surface, the coefficient can be obtained without using the object to be heated.
  • One form of the heater control device is an external heater that displays or transmits at least one of the temperature of the second heating element and the determination result as to whether the temperature of the second heating element is within an appropriate range to an external device.
  • An output unit may be provided.
  • the above embodiment can notify the user of the second temperature, which is the temperature of the second heating element, and the determination result.
  • the external output unit include a second temperature indicator, an alarm device that outputs when the second temperature is out of a predetermined range, or a data output that communicates with other external devices. interface and the like.
  • One form of the heater control device further includes a second temperature controller, and the second temperature controller adjusts the ratio so that the temperature of the second heating element approaches the target temperature. Outputting a second control signal, the second power controller may control the second power according to the ratio adjusted by the second control signal.
  • the above form can adjust the above ratio and control the temperature of the second heating element with high accuracy.
  • One form of the heater control device further includes a third temperature controller, and the third temperature controller adjusts the difference between the temperature of the second heating element and the first temperature to the temperature of the second heating element. output a third control signal for adjusting the ratio so that the difference between the respective target temperatures of the temperature and the first temperature, the second power controller outputs the adjusted by the third control signal
  • the second power may be controlled according to the ratio.
  • the above form can adjust the above ratio and accurately control the temperature of the second heating element.
  • FIG. 1 A heater control device 1 according to a first embodiment will be described with reference to FIGS. 1 to 4.
  • FIG. This heater control device 1 can be used in a film forming apparatus for forming a thin film on the surface of a wafer.
  • a film forming apparatus includes a substrate 10 and a support 20 in a chamber in which atmospheric gas can be controlled. Illustration of the chamber is omitted.
  • the heating elements 30 are not arranged in a part of the substrate 10 in the circumferential direction.
  • the heater control device 1 includes a substrate 10 , a support 20 , multiple heating elements 30 , a temperature sensor 40 , a current sensor 50 and a controller 60 .
  • the base material 10 has a first surface 10a on which the heating target W shown in FIG. 3 is placed, and a second surface 10b facing the first surface 10a.
  • the first surface 10a side of the substrate 10 may be referred to as "upper”, and the second surface 10b side may be referred to as "lower”.
  • a support 20 is attached below the substrate 10 .
  • a plurality of heating elements 30 are arranged inside the base material 10 as shown in FIGS. 1 and 3 .
  • the plurality of heating elements 30 includes a first heating element 31 and one or more second heating elements 32 .
  • a temperature sensor 40 detects the temperature of the first heating element 31 .
  • the current sensor 50 includes a first current sensor 51 that measures a first current flowing through the first heating element 31 and a second current sensor 52 that measures a second current flowing through the second heating element 32 .
  • the controller 60 mainly controls power supplied to the first heating element 31 and the second heating element 32 .
  • One of the features of the first embodiment is that the temperature sensor 40 is provided only in the first heating element 31 without providing a temperature sensor in the second heating element 32, so that the temperature of the second heating element 32 can be grasped. That's what it is. Each configuration will be described in more detail below.
  • the substrate 10 has a disk-like shape.
  • the substrate 10 has a first surface 10a and a second surface 10b.
  • the first surface 10a and the second surface 10b face each other.
  • a heating target W shown in FIG. 3 is placed on the first surface 10a.
  • the object W to be heated is, for example, a wafer of silicon, a compound semiconductor, or the like.
  • a support 20, which will be described later, is attached to the second surface 10b.
  • the second surface 10b is provided with a plurality of holes into which a plurality of terminals 30t shown in FIG. 3 are fitted.
  • the base material 10 is concentrically divided into a plurality of regions.
  • the base material 10 of this example is divided into an inner region 10i and an outer region 10e.
  • the inner region 10i is a circular region centered on the center of the substrate 10.
  • the center of the base material 10 is the center of a circle formed by the outline of the base material 10 in plan view.
  • the diameter of inner region 10i is 80% or less of the diameter of substrate 10 .
  • the diameter of the inner region 10i may also be 50% or less of the diameter of the substrate 10.
  • the diameter of inner region 10i may be 10% or more of the diameter of substrate 10 . Since the diameter of the first heating element 31 is 10% or more of the diameter of the substrate 10 , an area in which the first heating element 31 can be arranged in the center of the substrate 10 can be secured.
  • the outer region 10e is an annular region located outside the inner region 10i. A plurality of heating elements 30, which will be described later, are arranged corresponding to the plurality of areas.
  • the material of the base material 10 includes known ceramics. Examples of ceramics include aluminum nitride, aluminum oxide, and silicon carbide.
  • the material of the base material 10 may be composed of a composite material of the above ceramics and metal. Examples of metals include aluminum, aluminum alloys, copper, copper alloys, and the like.
  • the material of the base material 10 of this example is ceramics.
  • the support 20 supports the base material 10 from the second surface 10b side, as shown in FIGS.
  • the support 20 is attached to the second surface 10b so as to surround the terminals 30t when the heater control device 1 is viewed from the first surface 10a side.
  • the shape of the support 20 is not particularly limited.
  • the support 20 of this example is a cylindrical member.
  • the support 20 is arranged concentrically with the substrate 10 .
  • the base 10 and the support 20 are connected so that the center of the cylindrical support 20 and the center of the disk-shaped base 10 are coaxial.
  • Both ends of the support 20 are provided with outwardly bent flanges 21 .
  • a sealing member (not shown) is arranged between the flange portion 21 of the upper end portion and the second surface 10b. The interior of the support 20 is sealed by the sealing member.
  • the second surface 10b and the flange portion 21 may be joined to maintain airtightness without using a sealing member.
  • the chamber in which substrate 10 and support 20 are placed is typically filled with a corrosive gas. By keeping the inside of the support 20 airtight, the plurality of terminals 30t and the plurality of power lines 30c housed inside the support 20 can be isolated from the corrosive gas.
  • the material of the support As for the material of the support 20, well-known ceramics can be mentioned as well as the material of the base material 10.
  • the material of the support 20 and the material of the substrate 10 may be the same or different.
  • Each of the multiple heating elements 30 is a heat source that heats the heating target W via the base material 10 .
  • the first heating element 31 is arranged in a circular area including the center of the substrate 10, that is, the inner area 10i, as shown in FIGS.
  • One or more second heating elements 32 are arranged concentrically with the substrate 10 and the first heating elements 31 .
  • One or more second heating elements 32 are arranged in an annular region concentric with the center of the substrate 10, ie the outer region 10e.
  • the first heating element 31 and one or more second heating elements 32 are spaced apart in the thickness direction of the substrate 10 .
  • Each of the first heating element 31 and the second heating element 32 is connected to the power line 30c via the terminal 30t shown in FIG. Power is supplied from a power source (not shown) to each heating element 30 via the power line 30c.
  • the shapes of the first heating element 31 and the second heating element 32 are not particularly limited.
  • the shape of the outer peripheral outline of the first heating element 31 and the second heating element 32 is generally circular.
  • a plurality of heating elements 30 are arranged concentrically with the substrate 10 and the support 20 . Therefore, the plurality of heating elements 30 are also arranged concentrically.
  • concentric means that when the heater control device 1 is viewed from the first surface 10a side, the enveloping circles of the heating elements 30 have a common center and the enveloping circles have different diameters. . The center of this enveloping circle coincides with the center of the substrate 10 .
  • the first heating element 31 and the second heating element 32 are shown in a simplified manner in FIGS. 1 and 3, the plurality of heating elements 30 are arranged concentrically.
  • the term “center side” means the center side of the enveloping circle, and the term “outer side” means the side away from the center in the radial direction of the enveloping circle.
  • the plurality of heating elements 30 includes one first heating element 31 and one or more second heating elements 32, as shown in FIGS. In this example, there is one second heating element 32 . As shown in Modification 1, which will be described later, a plurality of second heating elements 32 may be provided.
  • the enveloping circle diameter of the one or more second heating elements 32 is larger than the enveloping circle diameter of the first heating element 31 .
  • the heating elements 30 may be arranged so as to partially overlap in the radial direction of the enveloping circles, or may be arranged at intervals without overlapping. may be placed.
  • Each heating element 30 is arranged inside the base material 10, as shown in FIGS. Each heating element 30 is arranged in a layered manner at intervals in the thickness direction of the substrate 10 . Each heating element 30 of this example is arranged in a layer parallel to the first surface 10a. The first heating element 31 is arranged in the first layer located closest to the first surface 10 a in the thickness direction of the base material 10 . By arranging the first heating element 31 on the first layer, a long length can be secured between the first heating element 31 and the second surface 10b. In addition, since the first heating element 31 is arranged in the first layer, the degree of freedom of the circuit pattern is high compared to the case where the first heating element 31 is arranged in a layer other than the first layer. .
  • the first heating element 31 arranged in the first layer does not need to be arranged so as to avoid the terminal 30t connected to the second heating element 32 .
  • the second heating element 32 is arranged closer to the second surface 10b than the first heating element 31 is.
  • the individual second heating elements 32 are also arranged in layers with intervals in the thickness direction of the substrate 10 .
  • each heating element 30 is not particularly limited as long as it can heat the object W to be heated to a desired temperature.
  • the material of each heating element 30 includes known metals suitable for resistance heating. Examples of metals include one selected from the group consisting of stainless steel, nickel, nickel alloys, silver, silver alloys, tungsten, tungsten alloys, molybdenum, molybdenum alloys, chromium, and chromium alloys.
  • Nickel alloys include, for example, nichrome.
  • Each heating element 30 can be manufactured, for example, by combining a screen printing method and a hot press bonding method. In the case of this example, it can be manufactured by the following procedures. Three ceramic substrates and a screen mask to which each heating element 30 can be transferred are prepared. As the screen mask, a mask capable of forming each circuit pattern of the first heating element 31 and the second heating element 32 is used. A screen mask of a circuit pattern to be produced is placed on each of the two ceramic substrates. A paste to be the heating element 30 is applied to the ceramic substrate on which the screen mask is placed. A squeegee is used to transfer the heating element 30 to the ceramic substrate. After transferring the heating element 30, the screen mask is removed.
  • the first substrate to which the first heating element 31 is transferred and the second substrate to which the second heating element 32 is transferred are obtained.
  • the first substrate, the second substrate, and the ceramic substrate to which the heating element is not transferred are laminated in order and joined by hot pressing.
  • Each heating element 30 is arranged inside the base material 10 by this bonding.
  • the temperature sensor 40 is a sensor that measures the first temperature of the first heating element 31 .
  • a commercially available thermocouple or resistance temperature detector can be used favorably.
  • the temperature measuring resistor includes PT100, which is a platinum temperature measuring resistor.
  • this temperature sensor 40 is inside the base material 10 .
  • the temperature sensor 40 is arranged inside the base 10 in a region inside the inner peripheral surface of the support 20 when the base 10 is viewed from above.
  • a temperature sensor is arranged inside a cylindrical support in the claims means that the temperature sensor is located inside the contour line of the inner peripheral surface of the support 20 when the support 20 is viewed in the axial direction. It means that 40 is located.
  • the temperature sensor 40 is preferably arranged near the first heating element 31 .
  • the temperature measured by the temperature sensor 40 installed near the first heating element 31 is not the temperature of the first heating element 31 itself, but the temperature of the inner region 10i of the substrate 10 where the first heating element 31 is arranged. be.
  • the temperature of the inner region 10i is also regarded as the first temperature of the first heating element 31.
  • the current sensor 50 is a sensor that detects current flowing through the heating element 30 .
  • a first current sensor 51 that detects a first current flowing through the first heating element 31 and a second current sensor 52 that detects a second current flowing through the second heating element 32 are provided.
  • the second current sensor 52 corresponds to the current sensor in claim 1 .
  • the second current sensor 52 is provided for each second heating element 32 .
  • the first current sensor 51 is provided on the power line 30c connected to the first heating element 31, and the second current sensor 52 is provided on the power line 30c connected to the second heating element 32, respectively.
  • a sensor represented by a commercially available CT (Current Transmitter) can be used as the current sensor 50 .
  • the first current or the second current is a value obtained by averaging the effective value of the current flowing through the first heating element 31 or the second heating element 32 within a predetermined period of time to remove electrical noise.
  • the controller 60 controls each part necessary for the operation of the heater control device 1 . More specifically, the controller 60 has a first temperature controller 61 , a first power controller 63 , a second power controller 64 , a calculator 65 and a memory 66 . Controller 60 is typically implemented by a processor including a CPU (Central Processor Unit) or DSP (Digital Signal Processing). Typically, a processor includes a bus, a CPU connected to the bus, a ROM (Read-Only Memory), a RAM (Random Access Memory), an input/output I/F (Interface), and the like. One or more processors may be provided in the controller 60, or a plurality of processors may be provided.
  • a processor Central Processor Unit
  • DSP Digital Signal Processing
  • a processor includes a bus, a CPU connected to the bus, a ROM (Read-Only Memory), a RAM (Random Access Memory), an input/output I/F (Interface), and the like.
  • One or more processors may be provided in the
  • the first temperature controller 61, the first power controller 63, the second power controller 64, the calculator 65, and the memory 66 may be configured as separate hardware, or may be part of one controller 60. It may be configured as a component.
  • a memory 66 stores a program for causing the processor to execute a control procedure, which will be described later.
  • the processor reads and executes programs stored in memory 66 .
  • the program includes program codes for processing in the first temperature controller 61 , the first power controller 63 , the second power controller 64 and the calculator 65 .
  • the first temperature controller 61 outputs a first control signal so that the first temperature approaches the target temperature.
  • PID control can be used for the control by the first temperature controller 61 .
  • PID control is a type of feedback control, and is a control method that controls an input value by three operations: the deviation (P) between the output value and the target value, its integration (I), and its differentiation (D). Smooth temperature control with little hunting can be performed by proportional action that outputs the manipulated variable according to the deviation. Integral action can automatically correct the offset. Differential action can speed up the response to disturbances.
  • the target temperature is the temperature set by the user.
  • the first temperature controller 61 performs PID calculation based on the target temperature and the current temperature of the first heating element 31 , that is, the first temperature, and outputs a first control signal to the first power controller 63 .
  • the first power controller 63 controls the first power supplied to the first heating element 31 according to the first control signal.
  • the first power controller 63 to which the first control signal is input supplies first power corresponding to the first control signal to the first heating element 31 .
  • the first power is calculated by multiplying the first current and the first voltage.
  • the first current is the measurement of the first current sensor 51 as described above.
  • the first voltage is the voltage applied to the first heating element 31 . This first voltage is obtained by calculation as described later.
  • the control of the first power is performed by the phase control method.
  • the phase control method is a method of controlling the voltage applied to the load within the range of 0% to 100% by controlling the ignition phase angle every half cycle of the power supply frequency.
  • a switching element is preferably used for the first power controller 63 .
  • a specific example of the switching element is a triac.
  • a triac is an element in which two thyristors are connected in anti-parallel so that bidirectional current can be controlled by opening and closing one gate.
  • FIG. 4 shows the current waveform of the supply current from the power supply as a sine wave.
  • the gate opens, turning on the triac and allowing current to flow.
  • the current in the area indicated by hatching is output.
  • the gate signal is a pulse signal with a constant width w. Even if the gate signal is removed, the triac remains on and current continues to flow. When the current flowing through the TRIAC becomes zero, the TRIAC automatically turns off and no current flows.
  • the triac can output a desired current within a range of 0% to 100% of the first current.
  • the output mode during phase control in this example is voltage proportional square control.
  • the voltage proportional square control is a mode in which the square of the effective value Vrms of the output voltage is proportional to the manipulated variable MV corresponding to the degree of opening of the gate.
  • the supply voltage from the power supply is also represented by a sine wave. Since the supply voltage from the power supply is known, the first voltage can also be grasped by calculation from the timing at which the gate signal is input with respect to the current waveform from the power supply as described above, in other words, the degree of opening of the gate. The computation of the first voltage and the computation of the first power are performed by the calculator 65, which will be described later.
  • Different ratios can be set in a series of temperature profiles of temperature increase, temperature maintenance, and temperature decrease of the heating element 30. Normally, this ratio is different in each stage of temperature rising, temperature holding, and temperature dropping.
  • the ratio between the time of temperature increase and the time of temperature decrease may differ depending on the temperature range from the start to the end of each stage. For example, between room temperature and 400° C., the first power:second power ratio is 1.0:0.8, and between 400° C. and 450° C., the first power:second power ratio is 1.0:0.8. 9. If the temperature rises at the same power ratio to a high temperature, the heat generating element 30 becomes too center-hot and may be damaged by thermal stress due to the difference in temperature distribution inside and outside the plane of itself. Therefore, it is preferable to increase the ratio of the second power at high temperatures.
  • This control of the second power is also performed by the phase control method in the same way as the control of the first power.
  • the second power is obtained by multiplying the second current and the second voltage.
  • the second current is the measurement of second current sensor 52 .
  • the second voltage can be calculated based on the degree of opening of the gate.
  • the computation of the second voltage and the computation of the second power are also performed by the calculator 65, which will be described later.
  • the calculator 65 performs various calculations required by the controller 60 . As described above, the computation of the first voltage, the first power, the second voltage, and the second power are all performed by the calculator 65 . Furthermore, the calculator 65 also calculates the second temperature, which is the temperature of the second heating element 32 .
  • the second temperature of the second heating element 32 is obtained using the resistance of the second heating element 32 and a previously obtained coefficient representing the relationship between the resistance of the second heating element 32 and the temperature. That is, the second temperature is not a value measured using a temperature sensor, but a value calculated based on the power supplied to the first heating element 31 .
  • the resistance of the second heating element 32 is obtained by dividing the second voltage of the second heating element 32 described above by the second current flowing through the second heating element 32 .
  • the coefficients are obtained in advance by a preliminary test, which will be described later. This coefficient also includes a relational expression showing the relationship between the resistance of the second heating element 32 and the temperature.
  • the coefficients are stored in memory 66 . If the relationship between the resistance of the second heating element 32 and the temperature is known in advance, and the resistance of the second heating element 32 is obtained, by referring to this resistance with the above relationship, the second Temperature can be calculated and obtained.
  • the memory 66 can use various non-volatile memories suitably as memory which memorize
  • the memory 66 may also include a volatile memory that temporarily stores values required for a series of operations.
  • the heater control device 1 may include an external output section 70 and a transformer 80 .
  • the external output unit 70 is a device that displays or transmits at least one of the second temperature of the second heating element 32 obtained as described above and the determination result as to whether or not the second temperature is within the appropriate range to an external device.
  • the external output unit 70 may be a display that displays the second temperature in characters, or displays the change over time of the second temperature in a graph.
  • Another external output unit 70 may be a device that outputs a processing result obtained by subjecting the second temperature to predetermined processing. Devices that indicate the result of this processing include an alarm device.
  • the alarm device is, for example, a device that issues an alarm when the second temperature deviates from the set appropriate range.
  • the warning is not particularly limited as long as it can notify the user of the abnormality of the second temperature.
  • specific types of alarms include character display on a display, lighting of a lamp, and sounding of a buzzer.
  • Still another external output unit 70 includes a communication device (not shown). This communication device communicates with an external device owned by a remote user. For example, information on the second temperature can be sent to an external device via a communication device, or the above alarm can be transmitted to the external device as a change in flag state via a communication device. The transmission of this information allows remote users to perceive the second temperature and alarm.
  • the transformer 80 is a member for electromagnetically coupling a power source (not shown) and the controller 60 to supply electric power to the first heating element 31 and the second heating element 32 .
  • the primary side of the transformer 80, that is, the power supply side, and the secondary side of the transformer 80, that is, the controller 60 side are not electrically connected and are insulated from each other. Since the power supply and the controller 60 are insulated, it is easy to control the power to each heating element 30 .
  • power is supplied to each of the heating elements 30 by branching the power line 30 c on the secondary side to each of the first heating element 31 and the second heating element 32 . That is, the first heating element 31 and the second heating element 32 are not electrically insulated from each other. Since the first heating element 31 and the second heating element 32 are not insulated, the number of transformers 80 can be reduced compared to the case where both the heating elements 30 are insulated.
  • the heater control device 1 may include an input section (not shown).
  • the input unit is a device for inputting various conditions set by the user. Various conditions include a preset ratio to the first power to define the second power.
  • Known input devices such as a numeric keypad, a keyboard, and a touch panel can be used for the input unit.
  • Various conditions input from the input unit are stored in the memory 66 .
  • ⁇ Processing procedure> The processing procedure of the heater control device 1 will be described with reference to FIGS. 5 and 6.
  • FIG. Refer to FIG. 1 for each component.
  • a processing procedure for outputting the first power and the second power to each heating element 30 will be described.
  • step S ⁇ b>1 a first temperature is obtained from the temperature sensor 40 and a first current is obtained from the first current sensor 51 .
  • the first temperature controller 61 outputs a first control signal so that the first temperature approaches the target temperature.
  • the first power controller 63 outputs the first power corresponding to the first control signal to the first heating element 31 .
  • step S ⁇ b>4 the calculator 65 calculates the second power, and the second power is output from the second power controller 64 to the second heating element 32 .
  • a series of processes from step S1 to step S4 are repeated while the heater control device 1 is being driven.
  • step S11 the second current sensor 52 acquires a second current.
  • step S12 the computing unit 65 computes the second resistance, which is the resistance of the second heating element 32, from the second current and the second voltage.
  • step S13 the computing unit 65 computes the second temperature using the computed second resistance and the previously obtained coefficient representing the relationship between the resistance of the second heating element 32 and the temperature.
  • step S ⁇ b>14 the obtained second temperature is output to the external output section 70 .
  • the preliminary test is a test for preliminarily obtaining a coefficient representing the relationship between the resistance of the second heating element 32 and the temperature. It is preferable to perform the preliminary test by different methods when the temperature is raised, when the temperature is lowered, and when the temperature is maintained. In other words, it is preferable to use different coefficients when raising and lowering the temperature and when maintaining the temperature.
  • FIG. 7 is a graph showing temporal changes in the temperature of the first heating element 31 in the heater control device 1 of this example.
  • the temperature of the heating element 30 rises at a substantially constant rate from room temperature to a predetermined holding temperature.
  • the rate of temperature increase in this temperature increase process is selected such that the heating element 30 is not damaged.
  • the temperature of the heating element 30 is held at a substantially constant temperature.
  • the temperature holding process includes an idle state in which no wafer is placed on the substrate 10 and a processing state in which a wafer is placed on the substrate 10 and a film is formed on the wafer.
  • minute temperature fluctuations occur due to the gas entering and exiting the film forming apparatus and the control of the electric power supplied to the heating elements 30 described above.
  • the idling state is indicated by a straight line extending horizontally, but actually, as will be described later, the temperature fluctuates very slightly.
  • wafers are moved in and out of the base material 10 and films are sequentially formed on a plurality of wafers, so that temperature fluctuations are greater than in the idle state.
  • the temperature change in the process state is shown in FIG. 7 by the dashed line following the straight line in the idle state.
  • the temperature of the heating element 30 drops at a substantially constant rate from the holding temperature to room temperature.
  • the temperature drop rate in this temperature drop process is selected such that the heating element 30 is not damaged.
  • the time of temperature increase and temperature decrease The amount of temperature change per unit time during temperature increase and temperature decrease is greater than that during temperature maintenance. During this temperature increase and temperature decrease, the film formation process on the wafer is not performed.
  • the temperature range from the room temperature to the holding temperature or the temperature range from the holding temperature to the room temperature is divided into narrower temperature ranges, and the relationship between the resistance of the second heating element 32 and the temperature is calculated for each of the divided temperature ranges.
  • Ask. the relationship between the resistance and the temperature of each of the first heating element 31 and the second heating element 32 is obtained for each of the temperature ranges separated from 50°C to 100°C. More specifically, when the temperature is rising, the first temperature range of 50 ° C. or higher and 100 ° C.
  • the second temperature range of 100 ° C. or higher and 200 ° C. or lower, the third temperature range of 200 ° C. or higher and 300 ° C. or lower, 300 C. to 400.degree. C. and the fifth temperature range from 400.degree. C. to the holding temperature are obtained.
  • An example of the holding temperature is 450°C.
  • the first temperature range the relationship between resistance and temperature at two points of 50° C. and 100° C. is obtained.
  • the relationship between the resistance of the second heating element 32 and the temperature should be obtained when the temperature is lowered, based on the same concept as when the temperature is raised.
  • a different coefficient can be used for each temperature range.
  • the temperature of the second heating element 32 can be obtained with high accuracy.
  • the temperature of the second heating element 32 at the resistance R(Tr), that is, the room temperature Tr, and the holding temperature Tk of the second heating element 32 at the resistance R(Tk) are also expressed by a proportional relational expression.
  • Tr ⁇ T ⁇ Tk and R(Tr) ⁇ R ⁇ R(Tk) Tr ⁇ T ⁇ Tk and R(Tr) ⁇ R ⁇ R(Tk).
  • the resistance value at the intermediate temperature cannot be expressed by linear interpolation between the two points. It is difficult to accurately obtain the temperature of the second heating element.
  • the rate of temperature change per unit time is very small compared to when the temperature is raised or lowered. Therefore, when maintaining the temperature, it is preferable to obtain the relationship between the resistance of the second heating element 32 and the temperature in a narrower temperature range than when raising or lowering the temperature. More specifically, the temperature of the second heating element 32 can be obtained accurately by using a coefficient corresponding to a minute temperature range, that is, the difference between the maximum temperature and the minimum temperature when the temperature is maintained.
  • the temperature holding process includes two temperature profiles, the idle state without the heating target W and the processing state with the heating target W, as described above. This temperature profile will be explained based on FIG. FIG.
  • the temperature of the first heating element 31 is the temperature obtained based on the resistance of the first heating element 31 obtained from the first current and the first voltage and the above coefficient.
  • the temperature of the second heating element 32 is the temperature obtained based on the resistance of the second heating element 32 obtained from the second current and the second voltage and the above coefficient.
  • This graph also shows the change over time of the measured value of the temperature sensor 40 . Both graphs have lines overlapping each other. Further, in this graph, Case 1 indicates the process of the idle state, and Case 2 indicates the process of the processing state.
  • Method A processing state: with heating target
  • the resistance value Rmax of each heating element 30 at the time of the maximum temperature Tmax and the resistance value Rmin of each heating element 30 at the time of the minimum temperature Tmin are obtained from the change over time of the measured value of the temperature sensor 40 within a predetermined time of the processing state. to confirm.
  • the predetermined time is selected from a range of about 500 seconds to 1000 seconds.
  • the predetermined time in this example is 600 seconds.
  • a film is formed on one wafer within this predetermined time.
  • FIG. 9 is an enlarged view of part of the temperature change in the processing state of FIG.
  • the minimum temperature Tmin is the valley temperature from when the film-formed wafer is taken out to when the current wafer to be film-formed is placed on the substrate 10 .
  • the maximum temperature Tmax is the peak temperature during the film formation process on the current wafer.
  • FIG. 9 shows that the minimum temperature Tmin is 449.4°C and the maximum temperature Tmax is 450.3°C.
  • the resistance value Rmax and the resistance value Rmin of each heating element 30 are the values obtained by dividing the first voltage at each time point by the first current, or the values obtained by dividing the second voltage at each time point by the second current. Using these maximum temperature Tmax, resistance value Rmax, minimum temperature Tmin, and resistance value Rmin, a relational expression between the temperature and resistance value of each heating element 30 is obtained. This relational expression is obtained from the same way of thinking as the relational expressions shown when the temperature is rising and when the temperature is falling.
  • the above method obtains a relational expression based on the resistance value Rmax, the maximum temperature Tmax, the minimum temperature Tmin, and the resistance value Rmin in the processing state of the wafer. It can be grasped with high precision.
  • the relationship between the resistance and the temperature of the heating element 30 can be obtained based on the temperature profile simulating the actual film formation. Thereby, the temperature of the second heating element 32 can be grasped with high accuracy.
  • Method B processing state: with heating target
  • the average resistance Rave within a predetermined time period is obtained from the change over time of the resistance value of each heating element 30 during the predetermined time period in the processing state.
  • the predetermined time is appropriately selected, for example, from a range of approximately 5000 seconds to 10000 seconds. In this example, the predetermined time is 8000 seconds. Film formation is performed on 10 or more wafers within this predetermined time.
  • the rate of change ⁇ R/R of the resistance of each heating element 30 within a predetermined period of time is set in advance.
  • the maximum resistance Rmax and the minimum resistance Rmin within a predetermined time are obtained, and then the difference ⁇ R between the maximum resistance Rmax and the minimum resistance Rmin and the ratio ⁇ R/Rave of the difference ⁇ R to the average resistance Rave are obtained.
  • this ratio ⁇ R/Rave be the rate of change ⁇ R/R.
  • the rate of change ⁇ R/R is assumed to be 0.02 here.
  • the average temperature Tave within a predetermined time period is obtained.
  • the amount of temperature change ⁇ T within a predetermined period of time is set in advance.
  • the temperature change amount ⁇ T the difference between the maximum temperature Tmax and the minimum temperature Tmin within a predetermined time is first obtained as the temperature change amount ⁇ T.
  • the temperature change amount ⁇ T is 0.88° C. here.
  • the ratio ⁇ R/R and the amount of temperature change ⁇ T are considered to be substantially constant for each heating element 30 unless the holding temperature changes significantly.
  • the fact that the holding temperature does not change greatly means that the amount of change in the holding temperature is 100° C. or less, for example.
  • the average resistance Rave and the average temperature Tave of each heating element 30 may be obtained. That is, the maximum resistance Rmax, the minimum resistance Rmin, the maximum temperature Tmax, and the minimum temperature Tmin from the next time onward are obtained as follows.
  • ⁇ R Rave x 0.02
  • Maximum resistance Rmax Rave+ ⁇ R/2
  • Minimum resistance Rmin Rave- ⁇ R/2
  • Maximum temperature Tmax Tave+ ⁇ T/2
  • Minimum temperature Tmin Tave- ⁇ T/2
  • the maximum resistance Rmax, minimum resistance Rmin, maximum temperature Tmax, and minimum temperature Tmin can be obtained using known resistance change rate ⁇ R/R and temperature change amount ⁇ T. Once these parameters are determined, the correlation between the resistance and temperature of the heating element 30 can be determined.
  • the temperature of the second heating element 32 can be obtained more easily.
  • Method C (idle state: no object to be heated) First, an average resistance Rave within a predetermined period of time is obtained from the change over time of the resistance value of each heating element 30 within a predetermined period of time in the idle state.
  • the predetermined time is appropriately selected, for example, from a range of approximately 5000 seconds to 10000 seconds. In this example, the predetermined time is 10000 seconds.
  • the rate of change ⁇ R/R of the resistance of each heating element 30 within a predetermined period of time is set in advance.
  • the maximum resistance Rmax and the minimum resistance Rmin within a predetermined time are obtained, and then the difference ⁇ R between the maximum resistance Rmax and the minimum resistance Rmin and the ratio ⁇ R/Rave of the difference ⁇ R to the average resistance Rave are obtained.
  • This ⁇ R/Rave is defined as the resistance change rate ⁇ R/R.
  • the rate of change ⁇ R/R is assumed to be 0.02 here.
  • the average temperature Tave within a predetermined time period is obtained.
  • the amount of temperature change ⁇ T within a predetermined period of time is set in advance.
  • the temperature change amount ⁇ T the difference between the maximum temperature Tmax and the minimum temperature Tmin within a predetermined time is first obtained as the temperature change amount ⁇ T.
  • the temperature change amount ⁇ T is 0.88° C. here.
  • the ratio ⁇ R/R and the amount of temperature change ⁇ T are considered to be substantially constant for each heating element 30 unless the holding temperature changes significantly.
  • the fact that the holding temperature does not change greatly means that the amount of change in the holding temperature is 100° C. or less, for example.
  • the average resistance Rave and the average temperature Tave of each heating element 30 may be obtained. That is, the maximum resistance Rmax, the minimum resistance Rmin, the maximum temperature Tmax, and the minimum temperature Tmin from the next time onward are obtained as follows.
  • ⁇ R Rave x 0.02
  • Maximum resistance Rmax Rave+ ⁇ R/2
  • Minimum resistance Rmin Rave- ⁇ R/2
  • Maximum temperature Tmax Tave+ ⁇ T/2
  • Minimum temperature Tmin Tave- ⁇ T/2
  • the maximum resistance Rmax, minimum resistance Rmin, maximum temperature Tmax, and minimum temperature Tmin can be obtained using known resistance change rate ⁇ R/R and temperature change amount ⁇ T.
  • the temperature of the second heating element 32 can be obtained based on the coefficient obtained when there is no object W to be heated in the idle state, there is no need to prepare a wafer when obtaining the coefficient.
  • waste of wafers can be reduced compared to the case of obtaining coefficients by forming films on wafers during the preliminary test. Once these parameters are determined, the correlation between the resistance and temperature of the heating element 30 can be determined.
  • the temperature of the second heating element 32 can be obtained more easily.
  • the heater control device can grasp the temperature of the zone corresponding to the second heating element 32 without providing the temperature sensor 40 on the second heating element 32 .
  • a temperature sensor 40 detects the temperature of the first heating element 31 .
  • the first electric power supplied to the first heating element 31 is controlled based on the temperature detected by the temperature sensor 40 .
  • the second electric power supplied to the second heating element 32 is controlled to have a preset ratio to the first electric power.
  • the temperature of the second heating element 32 is obtained by the calculator 65 based on the measured value of the second current sensor 52 . Therefore, the temperature of the second heating element 32 can be grasped without a temperature sensor for detecting the temperature of the second heating element 32 .
  • the second power is controlled by the phase control method, it can be controlled with high precision. As a result, the temperature of the second heating element 32 can also be grasped with high accuracy.
  • the first heating element 31 and the second heating element 32 are controlled by the first electric power and the second electric power. Control based on the power ratio is less susceptible to changes in resistance value due to self-heating of each heating element 30 than control based on the current ratio. From this point as well, the temperature of the second heating element 32 can be accurately grasped.
  • Embodiment 2 Next, Embodiment 2 will be described based on FIG.
  • the second temperature which is the temperature of the second heating element 32
  • the temperature of the second heating element 32 can be controlled by controlling the second electric power by changing the ratio described above. Differences from the first embodiment will be mainly described below, and descriptions of common points with the first embodiment will be omitted.
  • Embodiment 2 further includes a second temperature controller 62 .
  • the second temperature controller 62 outputs a second control signal for adjusting the ratio so that the second temperature approaches the target temperature. Control for adjusting this ratio can also utilize PID control.
  • second power controller 64 adjusts the ratio for determining the second power.
  • the fluctuation range of this ratio can be set as appropriate, but it is preferably within about 5% of the ratio of the second power before the change.
  • the second power ratio before change is 0.8, so the second power ratio after change is changed between 0.76 and 0.84. If the power fluctuates outside the fluctuation range of this ratio, an alarm device (not shown) issues an alarm to the user. This warning enables the user to detect an abnormality and take appropriate measures.
  • step S21 the second temperature controller 62 outputs a second control signal for adjusting the ratio so that the second temperature approaches the target temperature.
  • step S22 the calculator 65 calculates the second power according to the adjusted ratio. Second power is then output from the second power controller 64 to the second heating element 32 .
  • the heater control device 1 of Embodiment 2 not only can the second temperature of the second heating element 32 be displayed on the external output unit 70, but also the temperature of the second heating element 32 can be controlled.
  • Embodiment 3 Next, Embodiment 3 will be described.
  • the ratio for obtaining the second power is controlled so that the difference between the second temperature and the first temperature is as zero as possible.
  • the device configuration of Embodiment 3 is substantially the same as the device configuration of Embodiment 2 described in FIG.
  • a third temperature controller 62a instead of the second temperature controller 62, a third temperature controller 62a is provided.
  • the temperature Ts measured by the temperature sensor 40 is regarded as the temperature Th of the first heating element 31 itself and set as the first temperature. That is, strictly speaking, the temperature Th of the first heating element 31 is different from the temperature Ts measured by the temperature sensor 40 . This is because the temperature Ts transiently includes a temperature rise caused by the heat generated by the first heating element 31 itself.
  • the difference between the second temperature and the first temperature is regarded as the difference in temperature distribution within the first surface 10a. Strictly speaking, the first temperature and the second temperature have different target temperatures.
  • the third temperature adjuster 62a outputs a third control signal for adjusting the ratio so that the difference in temperature distribution becomes the difference between the target temperatures of the second temperature and the first temperature.
  • a second power controller 64 controls the second power according to the ratio adjusted by the third control signal. This control of the second power enables more precise temperature control of each heating element 30 .
  • an alarm device (not shown) issues an alarm to the user. This warning enables the user to detect an abnormality and take appropriate measures.
  • FIG. Modification 1 is a configuration that can be applied to any of Embodiments 1 to 3.
  • Each zone of the outer region 10e is a fan-shaped zone obtained by dividing the annular region into four equal parts.
  • a second heating element 32 is arranged in each zone of the outer region 10e divided into four equal parts. That is, a first heat generating element 31 is provided in the inner area 10i, one second heat generating element 32 is provided in the intermediate area 10m, and four second heat generating elements 32 are provided in the outer area 10e.
  • Each heating element 30 can independently control the power supplied.
  • a current sensor (not shown) is provided on each power line 30c connected to each heating element 30. As shown in FIG.
  • the heater control device 1 of Modified Example 1 by using the second power controller 64, it is possible to achieve uniform heating of the substrate 10 using more heating elements 30 than in Embodiments 1 and 2. .
  • Modification 2 will be described based on FIG. Modification 2 is a modification of Embodiment 1, and has a configuration in which the first heating element 31 and the second heating element 32 are insulated.
  • a first transformer 81 and a second transformer 82 are provided between the first heating element 31 and the power supply and between the second heating element 32 and the power supply, respectively. . That is, the primary sides of the first transformer 81 and the second transformer 82 are connected to the power line branched from the power supply. On the other hand, the secondary sides of the first transformer 81 and the second transformer 82 are connected to power lines 30c independent of each other. Therefore, the first heating element 31 and the second heating element 32 are insulated from each other.
  • the first heating element 31 and the second heating element 32 can be more reliably insulated.
  • Modification 3 will be described with reference to FIG. Modification 3 is a modification of Embodiment 2 or Embodiment 3, and has a configuration in which the first heating element 31 and the second heating element 32 are insulated.
  • a first transformer 81 and a second transformer 82 are provided between the first heating element 31 and the power supply and between the second heating element 32 and the power supply, respectively. . That is, the primary sides of the first transformer 81 and the second transformer 82 are connected to the power line branched from the power supply.
  • the secondary sides of the first transformer 81 and the second transformer 82 are connected to power lines 30c independent of each other. Therefore, the first heating element 31 and the second heating element 32 are insulated from each other.
  • the first heating element 31 and the second heating element 32 can be more reliably insulated.
  • heater control device 10 substrate 10a first surface 10b second surface 10i inner region 10m intermediate region 10e outer region 20 support 21 flange 30 heating element 31 first heating element 32 second heating element 30t terminal 30c power line 40 temperature sensor 50 Current sensor 51 First current sensor 52 Second current sensor 60 Controller 61 First temperature controller 62 Second temperature controller 62a Third temperature controller 63 First power controller 64 Second power controller 65 Computer 66 Memory 70 External output unit 80 Transformer 81 First transformer 82 Second transformer W Heating target w Width ⁇ Operation phase angle

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