WO2022156722A1 - 一种电子器件及其形成方法 - Google Patents

一种电子器件及其形成方法 Download PDF

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Publication number
WO2022156722A1
WO2022156722A1 PCT/CN2022/072834 CN2022072834W WO2022156722A1 WO 2022156722 A1 WO2022156722 A1 WO 2022156722A1 CN 2022072834 W CN2022072834 W CN 2022072834W WO 2022156722 A1 WO2022156722 A1 WO 2022156722A1
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wafer
cavity
receiving end
receiving
transmitting
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PCT/CN2022/072834
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English (en)
French (fr)
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冯雪丽
项少华
王冲
单伟中
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绍兴中芯集成电路制造股份有限公司
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Priority to JP2022548606A priority Critical patent/JP2023519791A/ja
Priority to US17/799,446 priority patent/US20230344400A1/en
Priority to EP22742201.1A priority patent/EP4089919A4/en
Publication of WO2022156722A1 publication Critical patent/WO2022156722A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
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    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices
    • H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H03H9/0523—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
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    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
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    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
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    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
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    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0571—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including bulk acoustic wave [BAW] devices
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    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
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    • H03H9/02—Details
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    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1042—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a housing formed by a cavity in a resin
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    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
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    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
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    • H03H9/56—Monolithic crystal filters
    • H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
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    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
    • H03H9/585—Stacked Crystal Filters [SCF]
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    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/588—Membranes
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    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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    • H03H2003/045—Modification of the area of an element

Definitions

  • the invention relates to the field of semiconductor technology, in particular to an electronic device and a method for forming the same.
  • the inter-frequency duplex device which can isolate the transmit signal and the receive signal, ensures that the receive and transmit can be completed independently without affecting each other, so it is widely used in the field of mobile communication.
  • the duplexer is usually composed of two sets of filters with different frequencies (respectively, the transmitting end filter and the receiving end filter), while the bulk acoustic wave filter (BAW) is due to its high operating frequency, small size, insertion It is widely used due to the advantages of small loss, high Q value and compatibility with semiconductor processes.
  • the frequency is generally determined by the film thickness of the resonant structure. Therefore, the film parameters of the transmitter filter and the receiver filter with different frequencies in electronic devices are correspondingly different. At this time, When the transmitter filter and the receiver filter are fabricated on the same wafer, the frequency adjustment of the filter will be limited by the remaining filters, making it difficult to adjust accurately.
  • the purpose of the present invention is to provide a method for forming an electronic device, so that the transmitting-end filter and the receiving-end filter with different frequencies in the electronic device can perform accurate frequency adjustment respectively, and it is beneficial to realize the overall device size of the electronic device. .
  • the present invention provides a method of forming an electronic device, comprising: providing a first wafer and a second wafer, and etching the first wafer to form a receiving end cap in a receiving area of the first wafer cavity, and sequentially form a lower electrode, a piezoelectric layer, an upper electrode and a passivation layer in the emission area of the first wafer to form a resonant structure at the emission end, and etch the second wafer to A transmitting end capping cavity is formed in the circular transmitting area, and a lower electrode, a piezoelectric layer, an upper electrode and a passivation layer are sequentially formed in the receiving area of the second wafer to form a receiving end resonance structure; and, bonding The first wafer and the second wafer are such that the receiving end capping cavity in the first wafer covers the receiving end resonance structure on the second wafer to form a receiving end filter, so The transmitting end capping cavity in the second wafer covers the transmitting end resonance structure on the first wafer to form a receiving end
  • a cavity is also formed in the emission area of the first wafer, and the emission end filter includes cavities sequentially arranged along the direction of the first wafer to the second wafer, and the emission end resonance. structure and the transmitting end capping cavity; and, a cavity is also formed in the receiving area of the second wafer, and the receiving end filter includes sequentially arranged along the direction of the second wafer to the first wafer.
  • the cavity, the receiver resonant structure, and the receiver cap the cavity so that the receiver filter is inverted relative to the transmitter filter.
  • the arrangement order of the film layers in the resonant structure at the receiving end is relative to the arrangement order of the film layers in the resonant structure at the transmitting end. upside down.
  • a cavity is also formed in the transmitting area of the first wafer, the transmitting end resonance structure is formed above the cavity, and the cavity in the first wafer and the receiving end capping cavity
  • the same mask is formed simultaneously in the same process; and/or, a cavity is further formed in the receiving area of the second wafer, the receiving end resonance structure is formed above the cavity, and the second wafer is formed with a cavity.
  • the cavity in the circle and the emitter capping cavity are formed simultaneously in the same process using the same reticle.
  • the method for forming the transmitter resonance structure further includes: laterally etching the end portion of the upper electrode in the transmitter region based on the first etching parameter, so that the end portion corresponding to the passivation layer is suspended to form a suspended portion.
  • the method for forming the resonant structure at the receiving end further includes: laterally etching the end of the upper electrode in the receiving region based on the second etching parameter, so that the end corresponding to the passivation layer is suspended to form a suspended portion, wherein the suspended portion is formed.
  • the second etch parameter is different from the first etch parameter.
  • a transmitting end connector is also formed in the transmitting area of the first wafer, and the transmitting end connecting component is located on the side of the transmitting end resonance structure and is electrically connected with the transmitting end resonance structure,
  • An emission end bonding post is also formed in the emission area of the second wafer, and the emission end bonding post corresponds to the position of the emission end connector, and is used for bonding the first wafer and the first wafer.
  • the transmitting end bonding post and the transmitting end connector are bonded and connected to form a transmitting end lead; and/or, a receiving end connector is also formed in the receiving area of the second wafer , the receiving end connector is located on the side of the receiving end resonant structure and is electrically connected with the receiving end resonant structure, the receiving end bonding post is also formed in the receiving area of the first wafer, and the receiving end bonding column is formed in the receiving area of the first wafer.
  • the receiving end bonding post corresponds to the position of the receiving end connector, and when the first wafer and the second wafer are bonded, the receiving end bonding post and the receiving end connector are bonded connected to form the receiving end outlet.
  • the method further includes: thinning the first wafer or the second wafer, and etching the thinned wafer to form A plurality of contact holes, the plurality of contact holes expose the transmitting end lead-out part and the receiving end lead-out part; conductive plugs are formed in the contact holes, and contact pads are formed on the corresponding wafers, so The contact pads cover the conductive plugs so as to be electrically connected with the conductive plugs; and solder balls are formed on the contact pads.
  • a first bonding ring is further formed on the first wafer, and the first bonding ring surrounds the transmitting area and the receiving area, and is formed on the second wafer.
  • a second bonding ring is also formed thereon, and the positions of the second bonding ring and the first bonding ring correspond; and, when bonding the first wafer and the second wafer, the The first bonding ring and the second bonding ring are bonded and connected.
  • Another object of the present invention is to provide an electronic device, comprising a first wafer and a second wafer bonded to each other; wherein, in the emission area, the first wafer is formed with a transmitter resonance structure, so
  • the transmitting end resonant structure includes a lower electrode, a piezoelectric layer, an upper electrode and a passivation layer that are sequentially stacked along the direction from the first wafer to the second wafer, and a transmitting end seal is formed in the second wafer.
  • the transmitting end capping cavity covers the transmitting end resonance structure to form a transmitting end filter; and, in the receiving area, a receiving end capping cavity is formed on the first wafer, the first A receiving end resonance structure is formed on the second wafer, and the receiving end resonance structure includes a lower electrode, a piezoelectric layer, an upper electrode and a passivation layer that are sequentially stacked along the direction from the second wafer to the first wafer.
  • the receiving end capping cavity covers the receiving end resonance structure to form a receiving end filter.
  • the transmitting-end resonant structure in the transmitting area is used to form a transmitting-end filter
  • the receiving-end resonant structure in the receiving area is used to form a receiving-end filter
  • the receiving end filters The filter is inverted relative to the transmit filter.
  • a sealing ring is further formed between the first wafer and the second wafer, and the sealing ring surrounds the transmitting end filter and the receiving end filter.
  • the transmitting end resonant structure and the receiving end capping cavity are prepared on the first wafer, and the transmitting end capping cavity and the receiving end resonant structure are prepared on the second wafer, thereby After bonding the first wafer and the second wafer, the transmitter filter can be formed in the transmitter area and the receiver filter can be formed in the receiver area at the same time.
  • the formation method provided by the present invention can not only simplify the preparation process of the device, but also facilitate the integration of the transmitting end filter and the receiving end filter in the same chip, which improves the integration degree of the device and reduces the complexity of the device. package size, and help reduce packaging costs.
  • the frequency adjustment of the transmitting end filter and the receiving end filter can be performed respectively, so as to improve the accuracy and stability of the device.
  • FIG. 1 is a schematic flowchart of a method for forming an electronic device according to an embodiment of the present invention.
  • FIGS. 2 to 8 are schematic structural diagrams of a method for forming an electronic device in an embodiment of the present invention during its manufacturing process.
  • the reference signs are as follows: 100T-transmitting area; 100R-receiving area; 110-first wafer; 120-second wafer; 200T-transmitter resonance structure; 200R-receiver resonance structure; 210T/210R-lower Electrode; 220T/220R-piezoelectric layer; 230T/230R-upper electrode; 240T/240R-passivation layer; 250T/250R-cavity; 300T-transmitting end capping cavity; 300R-receiving end capping cavity; 410T- 410R-the first lead-out of the receiver; 420T-the second lead of the transmitter; 420R-the second lead of the receiver; 500-sacrificial layer; 610T/610R-the first connector; 620T/ 620R-Second Connector; 710-First Bonding Ring; 720-Second Bonding Ring; 700-Sealing Ring; - Conductive Plug; 930 - Contact Pad; 940
  • the thin film parameters of different types of filters need to be adjusted individually to achieve their corresponding frequencies.
  • the film parameters of different types of filters are limited and cannot be adjusted accurately.
  • the thicknesses of the upper electrodes of the filter at the transmitting end and the filter at the receiving end are different, so when the upper electrode is etched back laterally to make the end of the passivation layer above the upper electrode suspended to form a suspended portion, the For upper electrodes with different thicknesses, the size of the lateral etch back is difficult to control, which in turn affects the Q value of the device.
  • the transmitter filter and the receiver filter can be formed on two wafers respectively, and the resonant structure of the transmitter filter and the receiver filter can be formed on the two wafers in turn, and then additionally provided Two wafers cover the resonant structures of the transmitter filter and the receiver filter one by one, so as to package the transmitter filter and the receiver filter.
  • this method requires at least 4 wafers, and the transmitter filter and the receiver filter are packaged in different chips respectively. , which not only makes the fabrication process of the device more complicated, increases the fabrication cost of the device, but also reduces the integration degree of the device.
  • the present invention provides a method for forming an electronic device, which can not only perform accurate frequency adjustment on both the transmitting end filter and the receiving end filter, but also help to improve the integration degree of the device and reduce the manufacturing cost. Specifically, as shown in FIG.
  • the forming method includes: step S100 , providing a first wafer and a second wafer, a transmitter resonant structure is formed in the emission area of the first wafer, and the first wafer is A receiving end capping cavity is formed in the circular receiving area, and a transmitting end capping cavity is formed in the transmitting area of the second wafer, and a receiving end resonance structure is formed in the receiving area of the second wafer; Step S200 , bond the first wafer and the second wafer, so that the receiving end capping cavity in the first wafer covers the receiving end resonance structure on the second wafer to form a receiving end filter The transmitter-end capping cavity in the second wafer covers the transmitter-end resonance structure on the first wafer to form a transmitter-end filter.
  • FIGS. 2 to 8 are the formation method of the electronic device in an embodiment of the present invention in the preparation process.
  • the advantages and features of the present invention will become more apparent from the following description. It should be noted that, the accompanying drawings are all in a very simplified form and in inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention. As well as relative terms such as “above,” “below,” “top,” “bottom,” “front,” and “rear” as shown in the drawings may be used to describe the relationship of various elements to each other.
  • step S100 is performed. Specifically, referring to FIG. 2 to FIG. 5 , the first wafer 110 and the second wafer 120 are provided.
  • a transmitter resonance structure 200T is formed in the transmitter area 100T of the first wafer 110 , and the transmitter resonance structure 200T can be specifically used to form a transmitter filter (for example, a bulk acoustic wave filter at the transmitter device). Further, a cavity 250T is formed in the transmitting region 100T of the first wafer 110, and the transmitting end resonance structure 200T is formed above the cavity 250T. And, a receiving end capping cavity 300R is formed in the receiving area 100R of the first wafer 110 .
  • the cavity 250T in the transmitting region 100T and the receiving end capping cavity 300R may be formed in the same process. Specifically, a photolithography process may be performed using the same mask to form the cavity 250T and the receiving end capping cavity 300R in the first wafer 110 at the same time. Further, after the cavity 250T and the receiving end capping cavity 300R are formed, a sacrificial layer 500 is filled in the cavity 250T and the receiving end capping cavity 300R. Specifically, a planarization process may be used to align and fill the sacrificial layer 500 in the cavity 250T and the receiving end capping cavity 300R, which facilitates the fabrication of the resonant structure in the subsequent process.
  • the transmitter resonance structure 200T is formed on the first wafer 110 .
  • the transmitter resonance structure 200T includes a lower electrode 210T, a piezoelectric layer 220T, an upper electrode 230T and a passivation layer 240T which are sequentially formed on the first wafer 110 .
  • the materials of the lower electrode 210T and the upper electrode 230T include, for example, molybdenum (Mo); and the materials of the piezoelectric layer 220T and the passivation layer 240T may include, for example, zinc oxide (ZnO), aluminum nitride (AlN) ) and at least one of lead zirconate titanate (PZT).
  • the method for forming the transmitter resonance structure 200T further includes: laterally etching the end of the upper electrode 230T based on the first etching parameter, so that the end corresponding to the passivation layer 240T is suspended.
  • the formation of the suspended portion is beneficial to improve the quality factor (Q value) of the filter. It should be noted that, since only the resonant structure of the transmitter filter is formed on the first wafer 110, it is only necessary to set the lateral etching parameters according to the specific thickness of the upper electrode 230T of the resonance structure of the transmitter filter to achieve The precise control of the etch-back size of the upper electrode 230T ensures the performance of the formed filter.
  • the method further includes: a transmitter connector is also formed in the transmitter area 100T of the first wafer 110 , and the transmitter connector is located at the transmitter resonance.
  • the side of the structure 200T is electrically connected to the transmitting end resonant structure 200T.
  • the transmitter connector includes a first connector 610T and a second connector 620T, the first connector 610T is electrically connected to the lower electrode 210T, and the second connector 620T is connected to the upper electrode 230T electrical connection.
  • the lower electrode 210T is extended relative to the film layer above it, and the first connecting member 610T is formed on the extended end of the lower electrode 210T; and, as shown in FIG.
  • an upper electrode lead-out portion separated from the lower electrode 210T is also formed in the emitter region 100T of the first wafer at the same time, and further The second connection member 620T is formed on the upper electrode lead-out portion. That is, in this embodiment, the first connection member 610T and the second connection member 620T are respectively formed on the lower electrode 210T and the upper electrode lead-out portion formed by the same conductive material layer, so that the first connection member 620T is formed.
  • the heights of the member 610T and the second connecting member 620T are the same or substantially the same.
  • first connecting member 610T and the second connecting member 620T connecting the transmitting-end resonant structure 200T are respectively disposed on both sides of the transmitting-end resonating structure 200T, and both are formed of metal materials, such as aluminum (Al), At least one of gold (Au), copper (Cu), and molybdenum (Mo).
  • Al aluminum
  • Au gold
  • Cu copper
  • Mo molybdenum
  • the 620T realizes auxiliary bonding and supporting functions on both sides of the transmitting end resonant structure 200T, so as to avoid the subsequent capping cavity of the transmitting end capping above the transmitting end resonating structure 200T from collapsing downward and colliding with the resonating structure. .
  • receiving end bonding posts 810R are also formed in the receiving area 100R of the first wafer 110 , and the receiving end bonding posts 810R are arranged on the side of the receiving end capping cavity 300R and are connected with the The positions of the receiving end connectors on the second wafer 120 correspond to each other.
  • the positions of the first connecting member 610R and the second connecting member 620R for connecting the resonant structure 200R at the receiving end correspond to each other.
  • the at least two receiving end bonding pillars 810R are respectively bonded to the first connecting member 610R and the second connecting member 620R on both sides of the receiving end resonant structure 200R in a one-to-one correspondence.
  • the bottom of the receiving end bonding post 810R is partially embedded in the first wafer 110 .
  • at least one groove may be formed on the surface of the first wafer 110 to form an uneven surface, and then the receiving end bonding column 810R is formed , the receiving end bonding posts 810R can be filled in the grooves to be embedded in the first wafer 110 , which is beneficial to improve the receiving end bonding posts 810R on the first wafer 110 adhesion strength.
  • a first bonding ring 710 is further formed on the first wafer 110 , and the first bonding ring 710 surrounds the transmitting region 100T and the receiving region 100T. It can be considered that one bonding ring 710 surrounds one electronic device, and one bonding ring 710 also corresponds to one semiconductor chip. That is, in this embodiment, both the transmitting end filter and the receiving end filter of the electronic device are integrated in the same semiconductor chip.
  • the first bonding ring 710 , the receiving end bonding post 810R, and the first connecting member 610T and the second connecting member 620T connecting the transmitting end resonant structure 200T can be prepared by using the same material in the same process form.
  • the cavity 250T and the receiving-end capping cavity 300R can be removed. sacrificial layer to release the cavity 250T and the receiving end capping cavity 300R.
  • an emitter capping cavity 300T is formed in the emitter region 100T of the second wafer 120 .
  • the receiving area 100R of the second wafer 120 is formed with a receiving-end resonant structure 200R, which can be specifically used to form a receiving-end filter (eg, a receiving-end BAW filter).
  • a cavity 250R is also formed in the receiving area 100R of the second wafer 120 , and the receiving end resonance structure 200R is formed above the cavity 250R.
  • the cavity 250R in the receiving region 100R and the transmitting end capping cavity 300T in the second wafer 120 may be formed in the same process. Specifically, a photolithography process may be performed using the same mask to form the cavity 250R and the emission end capping cavity 300T in the second wafer 120 at the same time. Further, after the cavity 250R and the transmitting end capping cavity 300T are formed, a sacrificial layer 500 is filled in the cavity 250R and the transmitting end capping cavity 300T.
  • the receiving end resonant structure 200R on the second wafer 120 includes a lower electrode 210R, a piezoelectric layer 220R, an upper electrode 230R and a passive electrode 210R, which are sequentially formed on the second wafer 120 .
  • chemical layer 240R The materials of the lower electrode 210R and the upper electrode 230R include, for example, molybdenum (Mo); and the materials of the piezoelectric layer 220R and the passivation layer 240R may include, for example, zinc oxide (ZnO), aluminum nitride (AlN). ) and at least one of lead zirconate titanate (PZT).
  • the frequency of the transmitting end filter formed in the transmitting area 100T and the frequency of the receiving end filter formed in the receiving area 100R are usually different.
  • the transmitting end resonant structure 200T can be made The thickness of the film layer in the middle is different from the thickness of the film layer in the resonant structure 200R at the receiving end.
  • the thickness of the upper electrode 230T in the transmitting-end resonant structure 200T can be made different from the thickness of the upper electrode 230R in the receiving-end resonating structure 200R; and/or, the passivation layer in the transmitting-end resonant structure 200T can be made
  • the thickness of 240T is different from the thickness of the passivation layer 240R in the receiving end resonant structure 200R, and so on.
  • the thickness of the film layer in the resonant structure 200T at the transmitting end may be greater than the thickness of the film layer in the resonant structure 200R at the receiving end.
  • the method for forming the resonant structure 200R at the receiving end further includes: laterally etching the end of the upper electrode 230R based on the second etching parameter, so that the end corresponding to the passivation layer 240R is suspended in the air.
  • the floating part is beneficial to improve the quality factor (Q value) of the filter. It should be noted that, since only the resonant structure of the receiving end filter is formed on the second wafer 120, it is only necessary to set the lateral etching parameters correspondingly according to the specific thickness of the upper electrode 230R of the resonant structure of the receiving end filter to achieve The precise control of the etch-back size of the upper electrode 230R ensures the performance of the formed filter.
  • the thickness of the upper electrode 230T in the resonant structure 200T at the transmitting end is different from the thickness of the upper electrode 230R in the resonating structure 200R at the receiving end.
  • the second etching parameter is correspondingly different from the Describe the first etching parameters.
  • the etching time in the second etching parameter is different from the etching time in the first etching parameter; and/or the etchant concentration in the second etching parameter is different from the etching time in the first etching parameter Etch concentration, etc.
  • the etching time in the first etching parameter can be made longer than the thickness of the upper electrode 230R in the first etching parameter.
  • the etching time in the two etching parameters if the thickness of the upper electrode 230T in the resonant structure 200T at the transmitting end is greater than the thickness of the upper electrode 230R in the resonating structure 200R at the receiving end, the etching time in the first etching parameter can be made longer than the thickness of the upper electrode 230R in the first etching parameter. The etching time in the two etching parameters.
  • the receiving area 100R of the second wafer 120 is further formed with a receiving end connector, and the receiving end connector is located on the side of the receiving end resonant structure 200R and parallels. It is electrically connected to the resonant structure 200R at the receiving end.
  • the receiving end connector includes a first connector 610R and a second connector 620R, the first connector 610R and the lower electrode 210R are electrically connected, and the second connector 620R and the upper electrode 210R are electrically connected.
  • the electrode 230R is electrically connected.
  • the first connecting member 610R and the second connecting member 620R connecting the resonant structure 200R at the receiving end are respectively disposed on two sides of the resonating structure 200R at the receiving end.
  • connection method between the resonant structure 200R at the receiving end and the corresponding first connector 610R and the second connector 620R may refer to the connection between the resonant structure 200T at the transmitting end and the corresponding first connector 610T and the second connector 620T. and the material of each film layer in the resonant structure 200R at the receiving end may be the same as the material of each film layer in the resonant structure 200T at the transmitting end, which will not be repeated here.
  • the emission area 100T of the second wafer 120 is further formed with emission end bonding posts 820T, and the emission end bonding posts 820T are arranged on the side of the emission end capping cavity 300T and corresponds to the position of the transmitter connector on the first wafer 110 .
  • at least two emission end bonding columns 820T are provided, and at least two emission end bonding columns 820T are respectively arranged on both sides of the emission end capping cavity 300T and on the first wafer 110
  • the positions of the first connector 610T and the second connector 620T for connecting the resonant structure 200T at the transmitting end correspond to each other.
  • the at least two emitter-side bonding pillars 820T are respectively bonded to the first connector 610T and the second connector 620T on both sides of the emitter-side resonant structure 200T in a one-to-one correspondence.
  • the bottoms of the emitter bonding posts 820T are also partially embedded in the second wafer 120 to improve the adhesion strength of the emitter bonding pillars 820T on the second wafer 120 .
  • This can refer to the structure of the receiving end bonding post 810R on the first wafer 110, and details are not repeated here.
  • a second bonding ring 720 is further formed on the second wafer 120 , and the second bonding ring 720 and the first wafer on the second wafer 120 are The position of the first bonding ring 710 on the circle 110 corresponds to that, in the bonding process, the first bonding ring 710 is bonded and connected to the second bonding ring 720 . At this time, the second bonding ring 720 accordingly surrounds the transmitting region 100T and the receiving region 100R.
  • the cavity 250R and the transmitting end capping cavity 300T can be removed. sacrificial layer to release cavity 250R and the emitter end capping cavity 300T.
  • step S200 is performed, specifically referring to FIG. 6 , the first wafer 110 and the second wafer 120 are bonded, so that the receiving end capping cavity 300R in the first wafer 110 covers all parts.
  • the receiving end resonant structure 200R on the second wafer 120 forms a receiving end filter
  • the transmitting end capping cavity 300T in the second wafer 120 covers the transmitting end resonant structure on the first wafer 110 200T to form a transmitter filter.
  • the transmitting end filter includes a cavity 250T, a transmitting end resonant structure 200T and a transmitting end capping cavity 300T sequentially arranged along the direction from the first wafer 110 to the second wafer 120 .
  • the receiver filter includes a cavity 250R, a receiver resonance structure 200R and a receiver cover 300R sequentially arranged along the direction of the second wafer 120 toward the first wafer 110 . That is, the receiving end filter is inverted relative to the transmitting end filter.
  • the film layers of the receiving end resonant structure 200R in the receiving area 100R are arranged relative to the transmitting area.
  • the film layer arrangement order of the transmitting-end resonant structure 200T in 100T is reversed.
  • the lower electrode, the piezoelectric layer, the upper electrode, and the passivation layer in the transmitting-end resonant structure 200T are stacked in sequence from bottom to top, while the lower electrode, The piezoelectric layer, the upper electrode and the passivation layer are stacked sequentially from top to bottom.
  • the first bonding ring on the first wafer 110 and the second bonding ring on the second wafer 120 are bonded
  • the sealing ring 700 is formed. In this way, the transmitter filter and the receiver filter can be surrounded in the same semiconductor chip.
  • the receiving end bonding post on the first wafer 110 and the receiving end connector key on the second wafer 120 The receiving end leads are formed by bonding and connecting, and the transmitting end bonding posts on the second wafer 120 and the transmitting end connectors on the first wafer 110 are bonded and connected to form the transmitting end leads.
  • the first connector and the second connector on the first wafer 110 are respectively bonded and connected to the two emission end bonding posts on the second wafer 120 to form the emission
  • the first connector and the second connector on the second wafer 120 are respectively bonded to the two receiving end bonding posts on the first wafer 110 to form the receiving ends respectively The first lead-out part 410R and the second lead-out part 420R at the receiving end.
  • metal bonding is performed using the first bonding ring and the second bonding ring to form the sealing ring 700 , and then the first wafer 110 and the second wafer 120 are bonded to each other.
  • both sides of the transmitting-end resonant structure 200T are also metal-bonded with connectors and bonding posts at the same time, which not only improves the bonding strength between the first wafer 110 and the second wafer 120 , and the emitting end lead-out members formed by bonding can also be supported on both sides of the emitting end resonance structure 200T, so as to improve the mechanical strength of the device.
  • the two sides of the receiving end resonant structure 200R are also metal-bonded by using connectors and bonding posts at the same time, which further improves the bonding strength between wafers, and the formed receiving end leads out
  • the components are also correspondingly supported on both sides of the resonant structure 200R at the receiving end.
  • the method for forming an electronic device further includes step S300, specifically referring to FIG. 7, thinning the first wafer 110 or the second wafer 120, and etching the thinned wafer to A plurality of contact holes 910 are formed, and the plurality of contact holes 910 respectively expose the radiating-end lead-out parts (including the transmitting-end first lead-out part 410T and the transmitting-end second lead-out part 420T) of the transmitting-end resonant structure 200T, and expose The receiving-end lead-out parts (including the receiving-end first lead-out part 410R and the receiving-end second lead-out part 420R) of the receiving-end resonant structure 200R are extracted.
  • the second wafer 120 is thinned and etched to form the contact holes 910 in the second wafer 120 .
  • the first wafer 110 may also be thinned and etched to form the contact holes in the first wafer 110 .
  • step S400 as shown in FIG. 8 , conductive plugs 920 are formed in the contact holes 910 , and contact pads 930 are formed on the corresponding wafers, and the contact pads 930 cover the conductive plugs 920 So as to be electrically connected with the conductive plugs 920 , and solder balls 940 are formed on the contact pads 930 .
  • a lead-out 410R is electrically connected to the same solder ball 940, and the solder ball 940 (ie, the solder ball connected with the transmit-end lead-out and the receive-end lead-out at the same time) corresponds to the antenna port.
  • the method for forming the electronic device further includes: cutting the bonded bonding structure along the sealing ring 700 to form a semiconductor chip having the electronic device.
  • both the transmitting end filter and the receiving end filter in the electronic device are integrated into the same semiconductor chip.
  • this embodiment also provides an electronic device, as shown in FIGS. 7 and 8 , the electronic device includes: a first wafer 110 and a second wafer that are bonded to each other 120.
  • the first wafer 110 is formed with the emission end resonant structure 200T
  • the second wafer 120 is formed with the emission end capping cavity 300T
  • the emission end capping cavity 300T seals Cover the transmitter resonance structure 200T.
  • a transmitting-end filter can be formed in the transmitting region 100T.
  • a receiving end capping cavity 300R is formed on the first wafer 110
  • a receiving end resonant structure 200R is formed on the second wafer 120
  • the receiving end capping cavity 300R seals Cover the receiving end resonant structure 200R.
  • a receiving end filter can be formed in the receiving area 100R.
  • the filter at the receiving end is inverted relative to the filter at the transmitting end.
  • the receiving end filter includes a cavity, a resonant structure and a capping cavity that are sequentially arranged along the direction from the second wafer 120 to the first wafer 110
  • the transmitting end filter includes a cavity along the first wafer 110 .
  • the circle 110 points to the cavity, the resonant structure and the capping cavity which are sequentially arranged in the direction of the second wafer 120 .
  • the receiver resonance structure 200R in the receiver filter is inverted relative to the transmitter resonance structure 200T in the transmitter filter.
  • the transmitting end filter and the receiving end filter are creatively integrated into the same semiconductor chip in a mutually inverted manner, which not only helps to simplify the process flow and reduce the process cost, but also effectively improves the device performance.
  • the integration level reduces the package size of the device and reduces the package cost.
  • the transmitter filter and the receiver filter are integrated in the same semiconductor chip, it is still possible to achieve precise frequency adjustment for the filters of different frequencies, avoiding the preparation of the transmitter resonance structure and the receiver resonance structure.
  • the processes interfere with each other, which effectively improves the flexibility of the preparation process and improves the process accuracy.

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Abstract

本发明提供了一种电子器件及其形成方法。在第一晶圆上制备发射端谐振结构和接收端封盖腔，在第二晶圆上制备发射端封盖腔和接收端谐振结构，从而在键合第一晶圆和第二晶圆之后，即可在发射区中形成发射端滤波器以及在接收区中形成接收端滤波器。本发明提供的形成方法，不仅可以简化器件的制备工艺，提高器件的精准性和稳定性，并且还有利于将发射端滤波器和接收端滤波器集成设置在同一芯片中，提高了器件的集成度，减小了器件的封装尺寸。

Description

一种电子器件及其形成方法 技术领域
发明涉及半导体技术领域，特别涉及一种电子器件及其形成方法。
背景技术
针对含有不同频率滤波器的电子器件而言，通常是分别制备不同频率的滤波器，之后再进行集成以形成电子器件。例如，异频双工器件，其可将发射信号和接收信号相隔离，保证接收和发射能够各自完成而不相互影响，因而被广泛应用于移动通信领域。具体而言，双工器通常是由两组不同频率的滤波器(分别为发射端滤波器和接收端滤波器)组成，而体声波滤波器(BAW)因其工作频率高、体积小、插损小、高Q值以及半导体工艺兼容等优势而被大量采用。
针对体声波滤波器而言，其频率一般是由谐振结构的薄膜厚度决定，因此在电子器件中具有不同频率的发射端滤波器和接收端滤波器的薄膜参数即相应的存在差异，此时，在将发射端滤波器和接收端滤波器制备在同一晶圆上时即会导致滤波器的频率调整会受到其余滤波器的限制而难以精确调整。
发明内容
本发明的目的在于提供一种电子器件的形成方法，以使得电子器件中具有不同频率的发射端滤波器和接收端滤波器可以各自进行精确的频率调整，并有利于实现电子器件的整体器件尺寸。
为此，本发明提供一种电子器件的形成方法，包括：提供第一晶圆和第二晶圆，刻蚀所述第一晶圆以在第一晶圆的接收区中形成接收端封盖腔，并在所述第一晶圆的发射区中依次形成下电极、压电层、上电极和钝化层以形成发射端谐振结构，以及刻蚀所述第二晶圆以在第二晶圆的发射区中形成发射端封盖腔，并在所述第二晶圆的接收区中依次形成下电极、压电层、上电极和钝化层以形成接收端谐振结构；以及，键合所述第一晶圆和所述第二晶圆，以使所述第一晶圆中的接收端封盖腔封盖所述第二晶圆上的接收端谐振 结构构成接收端滤波器，所述第二晶圆中的发射端封盖腔封盖所述第一晶圆上的发射端谐振结构构成发射端滤波器。
可选的，所述第一晶圆的发射区中还形成有空腔，所述发射端滤波器包括沿着第一晶圆指向第二晶圆的方向顺序排布的空腔、发射端谐振结构和发射端封盖腔；以及，所述第二晶圆的接收区中还形成有空腔，所述接收端滤波器包括沿着第二晶圆指向第一晶圆的方向顺序排布的空腔、接收端谐振结构和接收端封盖腔，使得所述接收端滤波器相对于所述发射端滤波器倒置。
可选的，在键合所述第一晶圆和所述第二晶圆之后，所述接收端谐振结构中的膜层排布顺序相对于所述发射端谐振结构中的膜层排布顺序倒置。
可选的，所述第一晶圆的发射区中还形成有空腔，所述发射端谐振结构形成在空腔的上方，以及所述第一晶圆中的空腔和接收端封盖腔利用同一光罩在同一工艺中同时形成；和/或，所述第二晶圆的接收区中还形成有空腔，所述接收端谐振结构形成在空腔的上方，以及所述第二晶圆中的空腔和发射端封盖腔利用同一光罩在同一工艺中同时形成。
可选的，所述发射端谐振结构的形成方法还包括：基于第一刻蚀参数侧向刻蚀发射区中的上电极的端部，以使钝化层对应的端部悬空而构成悬空部。以及，所述接收端谐振结构的形成方法还包括：基于第二刻蚀参数侧向刻蚀接收区中的上电极的端部，以使钝化层对应的端部悬空而构成悬空部，其中所述第二刻蚀参数不同于所述第一刻蚀参数。
可选的，所述第一晶圆的发射区中还形成有发射端连接件，所述发射端连接件位于所述发射端谐振结构的侧边并与所述发射端谐振结构电性连接，所述第二晶圆的发射区中还形成有发射端键合柱，所述发射端键合柱与所述发射端连接件位置对应，以及在键合所述第一晶圆和所述第二晶圆时，所述发射端键合柱和所述发射端连接件键合连接以形成发射端引出件；和/或，所述第二晶圆的接收区中还形成有接收端连接件，所述接收端连接件位于所述接收端谐振结构的侧边并与所述接收端谐振结构电性连接，所述第一晶圆的接收区中还形成有接收端键合柱，所述接收端键合柱与所述接收端连接件位置对应，以及在键合所述第一晶圆和所述第二晶圆时，所述接收端键合柱和所述接收端连接件键合连接以形成接收端引出件。
可选的，在键合所述第一晶圆和所述第二晶圆之后，还包括：减薄所述第一晶圆或第二晶圆，并刻蚀减薄后的晶圆以形成多个接触孔，所述多个接触孔暴露出所述发射端引出件和所述接收端引出件；在所述接触孔中形成导电插塞，并在对应的晶圆上形成接触垫，所述接触垫覆盖所述导电插塞以和所述导电插塞电性连接；以及，在所述接触垫上形成焊球。
可选的，在所述第一晶圆上还形成有第一键合环，所述第一键合环将所述发射区和所述接收区环绕在内，以及在所述第二晶圆上还形成有第二键合环，所述第二键合环和所述第一键合环的位置对应；以及，在键合所述第一晶圆和所述第二晶圆时，所述第一键合环和所述第二键合环键合连接。
本发明的又一目的在于提供一种电子器件，包括相互键合的第一晶圆和第二晶圆；其中，在发射区中，所述第一晶圆上形成有发射端谐振结构，所述发射端谐振结构包括沿着第一晶圆指向第二晶圆的方向依次堆叠设置的下电极、压电层、上电极和钝化层，以及所述第二晶圆中形成有发射端封盖腔，所述发射端封盖腔封盖所述发射端谐振结构以构成发射端滤波器；以及，在接收区中，所述第一晶圆上形成有接收端封盖腔，所述第二晶圆上形成有接收端谐振结构，所述接收端谐振结构包括沿着第二晶圆指向第一晶圆的方向依次堆叠设置的下电极、压电层、上电极和钝化层，所述接收端封盖腔封盖所述接收端谐振结构以构成接收端滤波器。
可选的，所述发射区中的所述发射端谐振结构用于构成发射端滤波器，所述接收区中的所述接收端谐振结构用于构成接收端滤波器，并且所述接收端滤波器相对于所述发射端滤波器倒置。
可选的，所述第一晶圆和所述第二晶圆之间还形成有密封环，所述密封环将所述发射端滤波器和所述接收端滤波器环绕在内。
在本发明提供的电子器件的形成方法中，在第一晶圆上制备发射端谐振结构和接收端封盖腔，并在第二晶圆上制备发射端封盖腔和接收端谐振结构，从而在键合第一晶圆和第二晶圆之后，即可以同时在发射区中形成发射端滤波器以及在接收区中形成接收端滤波器。可见，本发明提供的形成方法，不仅可以简化器件的制备工艺，并且还有利于将发射端滤波器和接收端滤波器集成设置在同一芯片中，提高了器件的集成度，减小了器件的封装尺寸，并 有利于降低封装成本。此外，本发明中即使是将发射端滤波器和接收端滤波器集成设置在同一芯片中，仍然能够对发射端滤波器和接收端滤波器分别进行频率调整，提高器件的精准性和稳定性。
附图说明
图1为本发明一实施例中的电子器件的形成方法的流程示意图。
图2～图8为本发明一实施例中的电子器件的形成方法在其制备过程中的结构示意图。
其中，附图标记如下：100T-发射区；100R-接收区；110-第一晶圆；120-第二晶圆；200T-发射端谐振结构；200R-接收端谐振结构；210T/210R-下电极；220T/220R-压电层；230T/230R-上电极；240T/240R-钝化层；250T/250R-空腔；300T-发射端封盖腔；300R-接收端封盖腔；410T-发射端第一引出件；410R-接收端第一引出件；420T-发射端第二引出件；420R-接收端第二引出件；500-牺牲层；610T/610R-第一连接件；620T/620R-第二连接件；710-第一键合环；720-第二键合环；700-密封环；810R-接收端键合柱；820T-发射端键合柱；910-接触孔；920-导电插塞；930-接触垫；940-焊球。
具体实施方式
承如背景技术所述，针对电子器件中的发射端滤波器和接收端滤波器而言，不同类别的滤波器的薄膜参数需要各自调整，以达到其各自对应的频率。而在将发射端滤波器和接收端滤波器的谐振结构均形成在同一晶圆上时，则不同类别的滤波器的薄膜参数即会受到限制而无法精准调整。例如，发射端滤波器和接收端滤波器的上电极的厚度不同，从而在对上电极进行侧向回刻蚀以使上电极上方的钝化层的端部悬空而构成悬空部时，则针对不同厚度的上电极而言其侧向回刻蚀的尺寸即难以控制，进而会影响器件的Q值。
对此，则可将发射端滤波器和接收端滤波器分别形成在两个晶圆上，并在两个晶圆上依次形成发射端滤波器和接收端滤波器的谐振结构之后，再另外提供两个晶圆，以一一封盖发射端滤波器和接收端滤波器的谐振结构，以对发射端滤波器和接收端滤波器进行封装。如此，虽然可以对发射端滤波器 和接收端滤波器的频率分别进行调整，然而该方法需要利用至少4个晶圆，并分别对发射端滤波器和接收端滤波器进行封装在不同的芯片中，这不仅使得器件的制备工艺更加繁琐、增加了器件的制备成本、并且还降低了器件的集成度。
有鉴于此，本发明提供了一种电子器件的形成方法，不仅可以对发射端滤波器和接收端滤波器均进行精确的频率调整，并且还有利于提高器件的集成度，减低制备成本。具体可参考图1所示，所述形成方法包括：步骤S100，提供第一晶圆和第二晶圆，所述第一晶圆的发射区中形成有发射端谐振结构，所述第一晶圆的接收区中形成有接收端封盖腔，以及所述第二晶圆的发射区中形成发射端封盖腔，所述第二晶圆的接收区中形成有接收端谐振结构；步骤S200，键合所述第一晶圆和所述第二晶圆，以使所述第一晶圆中的接收端封盖腔封盖所述第二晶圆上的接收端谐振结构构成接收端滤波器，所述第二晶圆中的发射端封盖腔封盖所述第一晶圆上的发射端谐振结构构成发射端滤波器。
以下结合图2～图8和具体实施例对本发明提出的电子器件及其形成方法作进一步详细说明，其中图2～图8为本发明一实施例中的电子器件的形成方法在其制备过程中的结构示意图。根据下面说明，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。以及附图中所示的诸如“上方”，“下方”，“顶部”，“底部”，“前方”和“后方”之类的相对术语可用于描述彼此之间的各种元件的关系。这些相对术语旨在涵盖除附图中描绘的取向之外的元件的不同取向。例如，如果装置相对于附图中的视图是倒置的，则例如描述为在另一元件“上方”的元件现在将在该元件下方。
首先执行步骤S100，具体参考图2～图5所示，提供第一晶圆110和所述第二晶圆120。
重点参考图2所示，所述第一晶圆110的发射区100T中形成有发射端谐振结构200T，所述发射端谐振结构200T具体可用于构成发射端滤波器(例如，发射端的体声波滤波器)。进一步的，所述第一晶圆110的发射区100T中还形成有空腔250T，所述发射端谐振结构200T形成在所述空腔250T的上 方。以及，所述第一晶圆110的接收区100R中形成有接收端封盖腔300R。
本实施例中，所述发射区100T中的空腔250T和所述接收端封盖腔300R可以在同一工艺中形成。具体的，可以利用同一光罩执行光刻工艺以同时在所述第一晶圆110中形成所述空腔250T和所述接收端封盖腔300R。进一步的，在形成所述空腔250T和所述接收端封盖腔300R之后，填充牺牲层500在所述空腔250T和所述接收端封盖腔300R中。具体的，可采用平坦化工艺将所述牺牲层500对准填充在所述空腔250T和所述接收端封盖腔300R中，如此，即有利于后续工艺中谐振结构的制备过程。
继续参考图2所示，在所述第一晶圆110上形成所述发射端谐振结构200T。所述发射端谐振结构200T包括依次形成在所述第一晶圆110上的下电极210T、压电层220T、上电极230T和钝化层240T。其中，下电极210T和上电极230T的材料例如均包括钼(Mo)；以及，所述压电层220T和所述钝化层240T的材料例如可包括氧化锌(ZnO)、氮化铝(AlN)和锆钛酸铅(PZT)中的至少一种。
本实施例中，所述发射端谐振结构200T的形成方法还包括：基于第一刻蚀参数侧向刻蚀所述上电极230T的端部，以使所述钝化层240T对应的端部悬空而构成悬空部，有利于提高滤波器的质量因子(Q值)。需要说明的是，由于第一晶圆110上仅形成有发射端滤波器的谐振结构，因此仅需要根据发射端滤波器的谐振结构其上电极230T的具体厚度对应设置侧向刻蚀参数，实现对上电极230T的回刻蚀尺寸的精确控制，保障所形成的滤波器的性能。
进一步的，在形成所述发射端谐振结构200T之后，还包括：在所述第一晶圆110的发射区100T中还形成有发射端连接件，所述发射端连接件位于所述发射端谐振结构200T的侧边并与所述发射端谐振结构200T电性连接。其中，所述发射端连接件包括第一连接件610T和第二连接件620T，所述第一连接件610T和所述下电极210T电性连接，所述第二连接件620T和所述上电极230T电性连接。本实施例中，所述下电极210T相对于其上方的膜层延伸出，并使所述第一连接件610T形成在所述下电极210T其延伸出的端部上；以及，附图2所示的剖面示意图中未明确体现出第二连接件620T和上电极230T之间的电性连接，然而本领域技术人员知晓第二连接件620T和上电极 230T之间是可以通过其他互连结构实现电性连接。
本实施例中，在制备发射端谐振结构200T的下电极210T时，还同时在所述第一晶圆的发射区100T中形成与所述下电极210T相互分断的上电极引出部，并进一步使所述第二连接件620T形成在所述上电极引出部上。即，本实施例中，所述第一连接件610T和所述第二连接件620T分别形成在由同一导电材料层分断形成的下电极210T和上电极引出部上，从而使得所述第一连接件610T和所述第二连接件620T的高度一致或基本一致。后续在进行封装时，即有利于保证第一连接件610T和第二连接件620T均能够被电性引出。
进一步的，连接发射端谐振结构200T的第一连接件610T和第二连接件620T分别设置在所述发射端谐振结构200T的两侧，并均采用金属材料形成，例如可采用铝(Al)、金(Au)、铜(Cu)和钼(Mo)中的至少一种。如此，一方面可保证所述第一连接件610T和第二连接件620T的导电性能，另一方面在后续的键合过程中，则还可以利用所述第一连接件610T和第二连接件620T在所述发射端谐振结构200T的两侧实现辅助键合和支撑的作用，以避免后续封盖在所述发射端谐振结构200T上方的发射端封盖腔向下坍塌而抵触至谐振结构上。
以及，在所述第一晶圆110的接收区100R中还形成有接收端键合柱810R，所述接收端键合柱810R布置在所述接收端封盖腔300R的侧边并与所述第二晶圆120上的接收端连接件位置对应。本实施例中，具有至少两个接收端键合柱810R，以及至少两个接收端键合柱810R分别布置在所述接收端封盖腔300R的两侧，并且和第二晶圆120上的用于连接接收端谐振结构200R的第一连接件610R和第二连接件620R位置对应。在后续的键合工艺中，所述至少两个接收端键合柱810R即分别和接收端谐振结构200R两侧的第一连接件610R和第二连接件620R一一对应键合。
进一步的，所述接收端键合柱810R的底部还部分嵌入至所述第一晶圆110中。具体的，在制备所述接收端键合柱810R之前，可以在所述第一晶圆110的表面上形成至少一个凹槽以形成不平整的表面，之后再形成所述接收端键合柱810R时，即可使所述接收端键合柱810R填充所述凹槽以嵌入至所述第一晶圆110中，如此即有利于提高所述接收端键合柱810R在第一晶圆110 上的附着强度。
继续参考图2所示，在所述第一晶圆110上还形成有第一键合环710，所述第一键合环710将所述发射区100T和所述接收区100T环绕在内。可以认为，一个键合环710环绕出一个电子器件，以及一个键合环710也对应一个半导体芯片。即，本实施例中，将电子器件的发射端滤波器和接收端滤波器均集成在同一半导体芯片内。
本实施例中，所述第一键合环710、所述接收端键合柱810R以及连接发射端谐振结构200T的第一连接件610T和第二连接件620T可以在同一工艺中采用相同材料制备形成。
之后，具体参考图3所示，在形成所述发射端谐振结构200T和其他膜层(例如，连接件、键合柱等)之后，即可去除空腔250T和接收端封盖腔300R中的牺牲层，以释放出所述空腔250T和所述接收端封盖腔300R。
接着重点参考图4所示，所述第二晶圆120的发射区100T中形成有发射端封盖腔300T。以及，所述第二晶圆120的接收区100R中形成有接收端谐振结构200R，具体可用于构成接收端滤波器(例如，接收端的体声波滤波器)。进一步的，所述第二晶圆120的接收区100R中还形成有空腔250R，所述接收端谐振结构200R形成在所述空腔250R的上方。
与所述第一晶圆110类似的，所述第二晶圆120中所述接收区100R中的空腔250R和所述发射端封盖腔300T可以在同一工艺中形成。具体的，可以利用同一光罩执行光刻工艺以同时在所述第二晶圆120中形成所述空腔250R和所述发射端封盖腔300T。进一步的，在形成所述空腔250R和所述发射端封盖腔300T之后，填充牺牲层500在所述空腔250R和所述发射端封盖腔300T中。
继续参考图4所示，所述第二晶圆120上的所述接收端谐振结构200R包括依次形成在所述第二晶圆120上的下电极210R、压电层220R、上电极230R和钝化层240R。其中，下电极210R和上电极230R的材料例如均包括钼(Mo)；以及，所述压电层220R和所述钝化层240R的材料例如可包括氧化锌(ZnO)、氮化铝(AlN)和锆钛酸铅(PZT)中的至少一种。
需要说明的是，在发射区100T中形成的发射端滤波器的频率和在所述接 收区100R中形成的接收端滤波器的频率通常不同，为此，则可使所述发射端谐振结构200T中膜层厚度不同于接收端谐振结构200R中的膜层厚度。例如，可使所述发射端谐振结构200T中的上电极230T的厚度不同于接收端谐振结构200R中的上电极230R的厚度；和/或，使所述发射端谐振结构200T中的钝化层240T的厚度不同于接收端谐振结构200R中的钝化层240R的厚度等等。具体的，可使所述发射端谐振结构200T中膜层厚度大于接收端谐振结构200R中的膜层厚度。
进一步的，所述接收端谐振结构200R的形成方法还包括：基于第二刻蚀参数侧向刻蚀所述上电极230R的端部，以使所述钝化层240R对应的端部悬空而构成悬空部，有利于提高滤波器的质量因子(Q值)。需要说明的是，由于第二晶圆120上仅形成有接收端滤波器的谐振结构，因此仅需要根据接收端滤波器的谐振结构其上电极230R的具体厚度对应设置侧向刻蚀参数，实现对上电极230R的回刻蚀尺寸的精确控制，保障所形成的滤波器的性能。
本实施例中，所述发射端谐振结构200T中的上电极230T的厚度不同于接收端谐振结构200R中的上电极230R的厚度，基于此，则所述第二刻蚀参数相应的不同于所述第一刻蚀参数。例如，第二刻蚀参数中的刻蚀时间不同于第一刻蚀参数中的刻蚀时间；和/或，第二刻蚀参数中的刻蚀剂浓度不同于第一刻蚀参数中的刻蚀剂浓度等。以一具体示例为例，所述发射端谐振结构200T中的上电极230T的厚度大于接收端谐振结构200R中的上电极230R的厚度，则可使第一刻蚀参数中的刻蚀时间大于第二刻蚀参数中的刻蚀时间。
与所述第一晶圆110相对应的，所述第二晶圆120的接收区100R中还形成有接收端连接件，所述接收端连接件位于所述接收端谐振结构200R的侧边并与所述接收端谐振结构200R电性连接。具体的，所述接收端连接件包括第一连接件610R和第二连接件620R，所述第一连接件610R和所述下电极210R电性连接，所述第二连接件620R和所述上电极230R电性连接。以及，连接接收端谐振结构200R的第一连接件610R和第二连接件620R分别设置在所述接收端谐振结构200R的两侧。
其中，接收端谐振结构200R与对应的第一连接件610R和第二连接件620R之间的连接方式可参考发射端谐振结构200T与对应的第一连接件610T 和第二连接件620T之间的连接方式；以及，接收端谐振结构200R中各个膜层的材料可以和所述发射端谐振结构200T中的各个膜层的材料相同，此处不再赘述。
继续参考图4所示，所述第二晶圆120的发射区100T中还形成有发射端键合柱820T，所述发射端键合柱820T布置在所述发射端封盖腔300T的侧边并与所述第一晶圆110上的发射端连接件位置对应。本实施例中，设置有至少两个发射端键合柱820T，以及至少两个发射端键合柱820T分别布置在所述发射端封盖腔300T的两侧，并和第一晶圆110上的用于连接发射端谐振结构200T的第一连接件610T和第二连接件620T位置对应。在后续的键合工艺中，所述至少两个发射端键合柱820T即分别和发射端谐振结构200T两侧的第一连接件610T和第二连接件620T一一对应键合。
同样的，所述发射端键合柱820T的底部也部分嵌入至所述第二晶圆120中，以提高所述发射端键合柱820T在第二晶圆120上的附着强度。此可参照第一晶圆110上的接收端键合柱810R的结构，此处不再赘述。
继续参考图4所示，在所述第二晶圆120上还形成有第二键合环720，并且所述第二晶圆120上的所述第二键合环720和所述第一晶圆110上的所述第一键合环710的位置对应，在键合工艺中，所述第一键合环710即和所述第二键合环720键合连接。此时，所述第二键合环720即相应的将所述发射区100T和所述接收区100R环绕在内。
之后，具体参考图5所示，在形成所述接收端谐振结构200R和其他膜层(例如，连接件、键合柱等)之后，即可去除空腔250R和发射端封盖腔300T中的牺牲层，以释放出空腔250R和所述发射端封盖腔300T。
接着执行步骤S200，具体参考图6所示，键合所述第一晶圆110和所述第二晶圆120，以使所述第一晶圆110中的接收端封盖腔300R封盖所述第二晶圆120上的接收端谐振结构200R以构成接收端滤波器，所述第二晶圆120中的发射端封盖腔300T封盖所述第一晶圆110上的发射端谐振结构200T以构成发射端滤波器。
本实施例中，所述发射端滤波器即包括沿着第一晶圆110指向第二晶圆120的方向顺序排布的空腔250T、发射端谐振结构200T和发射端封盖腔 300T。以及，所述接收端滤波器包括沿着第二晶圆120指向第一晶圆110的方向顺序排布的空腔250R、接收端谐振结构200R和接收端封盖300R。即，所述接收端滤波器相对于所述发射端滤波器倒置。
继续参考图6所示，键合所述第一晶圆110和所述第二晶圆120后，所述接收区100R中的接收端谐振结构200R的膜层排布顺序相对于所述发射区100T中的发射端谐振结构200T的膜层排布顺序倒置。例如，本实施例中，所述发射端谐振结构200T中的下电极、压电层、上电极和钝化层为由下至上依次堆叠设置，而所述接收端谐振结构200R中的下电极、压电层、上电极和钝化层则是由上至下依次堆叠设置。
进一步的，键合所述第一晶圆110和所述第二晶圆120后，第一晶圆110上的第一键合环和所述第二晶圆120上的第二键合环键合连接，进而形成密封环700。如此，即可将发射端滤波器和接收端滤波器环绕在同一半导体芯片内。
以及，键合所述第一晶圆110和所述第二晶圆120后，所述第一晶圆110上的接收端键合柱和第二晶圆120上的所述接收端连接件键合连接以形成接收端引出件，所述第二晶圆120上的发射端键合柱和所述第一晶圆110上的发射端连接件键合连接以形成发射端引出件。具体的，在所述发射区100T中，第一晶圆110上的第一连接件和第二连接件分别键合连接第二晶圆120上的两个发射端键合柱，以分别形成发射端第一引出件410T和发射端第二引出件420T。以及，在所述接收区100R中，第二晶圆120上的第一连接件和第二连接件分别键合连接第一晶圆110上的两个接收端键合柱，以分别形成接收端第一引出件410R和接收端第二引出件420R。
本实施例中，利用第一键合环和第二键合环执行金属键合以形成密封环700，进而将所述第一晶圆110和所述第二晶圆120相互键合。并且，所述发射区100T中，发射端谐振结构200T两侧也同时利用连接件和键合柱进行金属键合，不仅提高了第一晶圆110和第二晶圆120之间的键合强度，还可利用键合形成的发射端引出件支撑在发射端谐振结构200T的两侧，提升器件的机械强度。同样的，在接收区100R中，接收端谐振结构200R两侧也同时利用连接件和键合柱进行金属键合，进一步提高了晶圆之间的键合强度，并且 由此形成的接收端引出件也相应的支撑在接收端谐振结构200R的两侧。
进一步的方案中，所述电子器件的形成方法还包括步骤S300，具体参考图7所示，减薄所述第一晶圆110或第二晶圆120，并刻蚀减薄后的晶圆以形成多个接触孔910，所述多个接触孔910分别暴露出所述发射端谐振结构200T的发射端引出件(包括发射端第一引出件410T和发射端第二引出件420T)，以及暴露出所述接收端谐振结构200R的接收端引出件(包括接收端第一引出件410R和接收端第二引出件420R)。
本实施例中，对所述第二晶圆120进行减薄并刻蚀，以将所述接触孔910形成在所述第二晶圆120中。然而在其他实施例中，也可以对所述第一晶圆110进行减薄并刻蚀，进而将所述接触孔形成在所述第一晶圆110中。
接着在步骤S400中，具体参考图8所示，在所述接触孔910中形成导电插塞920，并在对应的晶圆上形成接触垫930，所述接触垫930覆盖所述导电插塞920以和所述导电插塞920电性连接，以及在所述接触垫930上形成焊球940。
其中，所述发射端谐振结构200T的其中一个引出件(本实施例中为发射端第一引出件410T)和所述接收端谐振结构200R的其中一个引出件(本实施例中为接收端第一引出件410R)均电性连接至同一焊球940，以及该焊球940(即同时连接有发射端引出件和接收端引出件的焊球)则对应于天线端口。
进一步的方案中，所述电子器件的形成方法还包括：沿着所述密封环700切割键合后的键合结构，以形成具有电子器件的半导体芯片。本实施例中，即将电子器件中的发射端滤波器和接收端滤波器均集成在同一半导体芯片中。
基于如上所述的形成方法，本实施例还提供了一种电子器件，具体可参考图7和图8所示，所述电子器件包括：相互键合的第一晶圆110和第二晶圆120。
其中，在发射区100T中，所述第一晶圆110上形成有发射端谐振结构200T，所述第二晶圆120中形成有发射端封盖腔300T，所述发射端封盖腔300T封盖所述发射端谐振结构200T。由此，例如可在所述发射区100T中构成发射端滤波器。
以及，在接收区100R中，所述第一晶圆110上形成有接收端封盖腔300R，所述第二晶圆120上形成有接收端谐振结构200R，所述接收端封盖腔300R封盖所述接收端谐振结构200R。由此，例如可在所述接收区100R中构成接收端滤波器。
继续参考图7和图8所示，所述接收端滤波器相对于所述发射端滤波器倒置。具体的，所述接收端滤波器包括沿着第二晶圆120指向第一晶圆110的方向依次排布的空腔、谐振结构和封盖腔，然而发射端滤波器包括沿着第一晶圆110指向第二晶圆120的方向依次排布的空腔、谐振结构和封盖腔。更具体的，所述接收端滤波器中的接收端谐振结构200R相对于所述发射端滤波器中的发射端谐振结构200T倒置。
本实施例中，创造性的将发射端滤波器和接收端滤波器以相互倒置的方式集成在了同一半导体芯片中，不仅有利于精简了工艺流程，降低了工艺成本，同时还有效提高了器件的集成度，减小了器件的封装尺寸，并降低了封装成本。以及，即使是将发射端滤波器和接收端滤波器集成在了同一半导体芯片中，仍然可以实现对不同频率的滤波器分别进行精确的频率调整，避免发射端谐振结构和接收端谐振结构的制备工艺相互干扰，有效提高了制备工艺的灵活度，提高工艺精度。
需要说明的是，虽然本发明已以较佳实施例披露如上，然而上述实施例并非用以限定本发明。对于任何熟悉本领域的技术人员而言，在不脱离本发明技术方案范围情况下，都可利用上述揭示的技术内容对本发明技术方案作出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化及修饰，均仍属于本发明技术方案保护的范围。
还应当理解的是，除非特别说明或者指出，否则说明书中的术语“第一”、“第二”、“第三”等描述仅仅用于区分说明书中的各个组件、元素、步骤等，而不是用于表示各个组件、元素、步骤之间的逻辑关系或者顺序关系等。
此外还应该认识到，此处描述的术语仅仅用来描述特定实施例，而不是用来限制本发明的范围。必须注意的是，此处的以及所附权利要求中使用的单数形式“一个”和“一种”包括复数基准，除非上下文明确表示相反意思。 例如，对“一个步骤”或“一个装置”的引述意味着对一个或多个步骤或装置的引述，并且可能包括次级步骤以及次级装置。应该以最广义的含义来理解使用的所有连词。以及，词语“或”应该被理解为具有逻辑“或”的定义，而不是逻辑“异或”的定义，除非上下文明确表示相反意思。此外，本发明实施例中的方法和/或设备的实现可包括手动、自动或组合地执行所选任务。

Claims (11)

  1. 一种电子器件的形成方法，其特征在于，包括：
    提供第一晶圆和第二晶圆，刻蚀所述第一晶圆以在第一晶圆的接收区中形成接收端封盖腔，并在所述第一晶圆的发射区中依次形成第一电极、压电层、第二电极和钝化层以形成发射端谐振结构，以及刻蚀所述第二晶圆以在第二晶圆的发射区中形成发射端封盖腔，并在所述第二晶圆的接收区中依次形成第一电极、压电层、第二电极和钝化层以形成接收端谐振结构；以及，
    键合所述第一晶圆和所述第二晶圆，以使所述第一晶圆中的所述接收端封盖腔封盖所述第二晶圆上的所述接收端谐振结构构成接收端滤波器，所述第二晶圆中的所述发射端封盖腔封盖所述第一晶圆上的所述发射端谐振结构构成发射端滤波器。
  2. 如权利要求1所述的电子器件的形成方法，其特征在于，所述第一晶圆的发射区中还形成有第一空腔，所述发射端滤波器包括沿着所述第一晶圆指向所述第二晶圆的方向顺序排布的所述第一空腔、所述发射端谐振结构和所述发射端封盖腔；
    以及，所述第二晶圆的接收区中还形成有第二空腔，所述接收端滤波器包括沿着所述第二晶圆指向所述第一晶圆的方向顺序排布的所述第二空腔、所述接收端谐振结构和所述接收端封盖腔，使得所述接收端滤波器相对于所述发射端滤波器倒置。
  3. 如权利要求1所述的电子器件的形成方法，其特征在于，在键合所述第一晶圆和所述第二晶圆之后，所述接收端谐振结构中的膜层排布顺序相对于所述发射端谐振结构中的膜层排布顺序倒置。
  4. 如权利要求1所述的电子器件的形成方法，其特征在于，所述第一晶圆的发射区中还形成有第一空腔，所述发射端谐振结构形成在所述第一空腔的上方，以及所述第一晶圆中的所述第一空腔和所述接收端封盖腔利用同一光罩在同一工艺中同时形成；和/或，
    所述第二晶圆的接收区中还形成有第二空腔，所述接收端谐振结构形成在所述第二空腔的上方，以及所述第二晶圆中的所述第二空腔和所述发射端 封盖腔利用同一光罩在同一工艺中同时形成。
  5. 如权利要求1所述的电子器件的形成方法，其特征在于，所述发射端谐振结构的形成方法还包括：基于第一刻蚀参数侧向刻蚀发射区中的上电极的端部，以使钝化层对应的端部悬空而构成悬空部；
    所述接收端谐振结构的形成方法还包括：基于第二刻蚀参数侧向刻蚀接收区中的上电极的端部，以使钝化层对应的端部悬空而构成悬空部，其中所述第二刻蚀参数不同于所述第一刻蚀参数。
  6. 如权利要求1所述的电子器件的形成方法，其特征在于，所述第一晶圆的发射区中还形成有发射端连接件，所述发射端连接件位于所述发射端谐振结构的侧边并与所述发射端谐振结构电性连接，所述第二晶圆的发射区中还形成有发射端键合柱，所述发射端键合柱与所述发射端连接件位置对应，以及在键合所述第一晶圆和所述第二晶圆时，所述发射端键合柱和所述发射端连接件键合连接以形成发射端引出件；和/或，
    所述第二晶圆的接收区中还形成有接收端连接件，所述接收端连接件位于所述接收端谐振结构的侧边并与所述接收端谐振结构电性连接，所述第一晶圆的接收区中还形成有接收端键合柱，所述接收端键合柱与所述接收端连接件位置对应，以及在键合所述第一晶圆和所述第二晶圆时，所述接收端键合柱和所述接收端连接件键合连接以形成接收端引出件。
  7. 如权利要求6所述的电子器件的形成方法，其特征在于，在键合所述第一晶圆和所述第二晶圆之后，还包括：
    减薄所述第一晶圆或所述第二晶圆，并刻蚀减薄后的晶圆以形成多个接触孔，所述多个接触孔暴露出所述发射端引出件和所述接收端引出件；
    在所述接触孔中形成导电插塞，并在对应的晶圆上形成接触垫，所述接触垫覆盖所述导电插塞以和所述导电插塞电性连接；以及，
    在所述接触垫上形成焊球。
  8. 如权利要求1所述的电子器件的形成方法，其特征在于，在所述第一晶圆上还形成有第一键合环，所述第一键合环将所述发射区和所述接收区环绕在内，以及在所述第二晶圆上还形成有第二键合环，所述第二键合环和所述第一键合环的位置对应；
    在键合所述第一晶圆和所述第二晶圆时，所述第一键合环和所述第二键合环键合连接。
  9. 一种电子器件，其特征在于，包括：相互键合的第一晶圆和第二晶圆；以及，
    在发射区中，所述第一晶圆上形成有发射端谐振结构，所述发射端谐振结构包括沿着第一晶圆指向第二晶圆的方向依次堆叠设置的第一电极、压电层、第二电极和钝化层，以及所述第二晶圆中形成有发射端封盖腔，所述发射端封盖腔封盖所述发射端谐振结构以构成发射端滤波器；
    在接收区中，所述第一晶圆上形成有接收端封盖腔，所述第二晶圆上形成有接收端谐振结构，所述接收端谐振结构包括沿着第二晶圆指向第一晶圆的方向依次堆叠设置的第一电极、压电层、第二电极和钝化层，所述接收端封盖腔封盖所述接收端谐振结构以构成接收端滤波器。
  10. 如权利要求9所述的电子器件，其特征在于，所述第一晶圆和所述第二晶圆之间还形成有密封环，所述密封环将所述发射端滤波器和所述接收端滤波器环绕在内。
  11. 如权利要求9所述的电子器件，其特征在于，所述第一晶圆的发射区中还形成有第一空腔，所述发射端谐振结构形成在所述第一空腔的上方，以及所述第一晶圆中的所述第一空腔和所述接收端封盖腔利用同一光罩在同一工艺中同时形成；和/或，
    所述第二晶圆的接收区中还形成有第二空腔，所述接收端谐振结构形成在所述第二空腔的上方，以及所述第二晶圆中的所述第二空腔和所述发射端封盖腔利用同一光罩在同一工艺中同时形成。
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