WO2022156489A1 - 激光器载体及其制作方法 - Google Patents
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- WO2022156489A1 WO2022156489A1 PCT/CN2021/141687 CN2021141687W WO2022156489A1 WO 2022156489 A1 WO2022156489 A1 WO 2022156489A1 CN 2021141687 W CN2021141687 W CN 2021141687W WO 2022156489 A1 WO2022156489 A1 WO 2022156489A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000005476 soldering Methods 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims 2
- 230000010354 integration Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 24
- 239000000758 substrate Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910018515 Cu80Sn20 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
Definitions
- the embodiments of the present application relate to the field of semiconductors, and in particular, to a laser carrier and a manufacturing method thereof.
- the electrical signal and the DC bias signal can be directly loaded onto the laser after being mixed by a driver or other means, and the output optical power of the laser can be changed by changing the input current of the laser.
- the output optical power of the laser can be changed by changing the input current of the laser.
- the commonly used transmission line impedance is 50 ⁇
- the impedance of the laser chip is generally around 10 ⁇ .
- the laser chip can be connected in series with a 40 ⁇ terminal resistor to increase its impedance value and achieve 50 ⁇ impedance matching.
- the terminal resistor can be welded on the base, and a wire can be drawn out on both sides of the terminal resistor to connect the laser chip and the signal line respectively to form a laser module.
- an additional termination resistor needs to be mounted on the substrate of the laser module, which occupies a large space and has a complicated process, which is not conducive to mass production.
- the embodiments of the present application provide a laser carrier and a manufacturing method thereof, which solve the problems of large space occupied by the laser and complicated processes.
- a laser carrier is provided, the laser carrier is used to carry a laser chip, and a first surface of the laser carrier is provided with: a first conductive layer, the first conductive layer and the first signal line Electrical connection; a second conductive layer, the second conductive layer is electrically connected to the second signal line, and the second conductive layer and the first conductive layer are arranged at intervals, wherein the laser chip is arranged on the first conductive layer, And the laser chip is electrically connected to the second conductive layer; a thin film resistor is formed on the first surface of the laser carrier, and the thin film resistor is electrically connected to the laser chip through the first conductive layer or the second conductive layer. connect. Therefore, impedance matching is achieved by directly forming the thin film resistor on the laser carrier, and meanwhile, the thin film resistor occupies a small space and has a simple process, which is beneficial to mass production.
- the first conductive layer includes: a first sub-conductive layer and a second sub-conductive layer arranged at intervals, the first sub-conductive layer is electrically connected to the first signal line, and the second sub-conductive layer is electrically connected to the first signal line.
- the laser chip is arranged on the conductive layer; wherein, the thin film resistor is arranged in the gap between the first sub-conductive layer and the second sub-conductive layer, and one end of the thin-film resistor is connected to the first sub-conductive layer, and the other end is connected to the first sub-conductive layer. One end is connected to the second sub-conducting layer. Therefore, the thin film resistor can be connected in series with the laser chip through the first conductive layer to achieve impedance matching.
- the sum of the impedance of the laser chip and the impedance of the thin film resistor is basically equal to the impedance on the transmission line, so that the radio frequency signal on the transmission line is transmitted.
- the laser chip there is basically no reflection.
- the second conductive layer includes: a third sub-conductive layer and a fourth sub-conductive layer arranged at intervals, the third sub-conductive layer is electrically connected to the laser chip, and the fourth sub-conductive layer is electrically connected. is electrically connected to the second signal line; the thin film resistor is arranged in the gap between the third sub-conductive layer and the fourth sub-conductive layer, and one end of the thin-film resistor is connected to the third sub-conductive layer, and the other end is connected to the third sub-conductive layer.
- the fourth sub-conducting layer is connected. Therefore, the thin film resistor can be connected in series with the laser chip through the second conductive layer to realize impedance matching between the laser chip and the transmission line.
- the sum of the impedance of the laser chip and the impedance of the thin film resistor is basically equal to the impedance of the transmission line, so that the transmission line When the radio frequency signal on the laser is transmitted to the laser chip, there is basically no reflection.
- the laser chip is connected to the second conductive layer through a first wire. Therefore, the electrical connection between the laser chip and the second conductive layer is realized, and the connection method is simple, which is beneficial to mass production.
- the laser chip is connected to the first conductive layer by soldering. Therefore, the electrical connection between the laser chip and the first conductive layer is realized, and the connection method is simple, which is beneficial to mass production.
- the first conductive layer is connected to the first signal line through a second wire
- the second conductive layer is connected to the second signal wire through a third wire. Therefore, the electrical connection between the first conductive layer and the first signal line is realized, and the electrical connection between the second conductive layer and the second signal line is realized, and the connection method is simple, which is beneficial to mass production.
- the first signal line and the second signal line are arranged on a circuit board.
- the first signal line and the second signal line can be arranged outside the carrier, and the first signal line, the second signal line and the device arranged on the carrier can be respectively connected by wires, which can save the space of the carrier.
- the thin film resistor is formed on the laser carrier by electroplating. Therefore, the forming process of the thin film resistor is simple and easy to form.
- a second aspect of the embodiments of the present application provides a method for manufacturing a laser carrier, the method comprising: forming a first conductive layer, a second conductive layer and a thin film resistor on a first surface of the laser carrier, the first conductive layer and The second conductive layers are arranged at intervals, wherein the laser carrier is used to carry a laser chip, and the thin film resistor is electrically connected to the laser chip through the first conductive layer or the second conductive layer. Therefore, impedance matching is achieved by directly forming the thin film resistor on the laser carrier, and meanwhile, the thin film resistor occupies a small space and has a simple process, which is beneficial to mass production.
- the first conductive layer includes a first sub-conductive layer and a second sub-conductive layer arranged at intervals, and the first conductive layer, the second conductive layer and the second conductive layer are formed on the first surface of the laser carrier.
- a thin-film resistor comprising: forming the thin-film resistor on the first surface of the laser carrier; forming the first sub-conductive layer, the second sub-conductive layer and the In the second conductive layer, one end of the thin film resistor is connected to the first sub-conductive layer, and the other end is connected to the second sub-conductive layer.
- the sum of the impedance of the laser chip and the impedance of the thin film resistor is basically equal to the impedance on the transmission line, so that the radio frequency signal on the transmission line is transmitted to the When the laser chip is used, there is basically no reflection.
- the second conductive layer includes a third sub-conductive layer and a fourth sub-conductive layer arranged at intervals, and the first conductive layer, the second conductive layer and the second conductive layer are formed on the first surface of the laser carrier.
- a thin film resistor comprising: forming the thin film resistor on the first surface of the laser carrier; forming the first conductive layer, the third sub-conductive layer and the first conductive layer on the first surface of the laser carrier Four sub-conducting layers, so that one end of the thin film resistor is connected to the third sub-conducting layer, and the other end is connected to the fourth sub-conducting layer.
- the thin film resistor and the second conductive layer are connected in series to realize impedance matching.
- the sum of the impedance of the laser chip and the impedance of the thin film resistor is basically equal to the impedance on the transmission line, so that the radio frequency signal on the transmission line is transmitted to the laser.
- the chip When the chip is used, there is basically no reflection.
- Fig. 1 is the structural representation of a kind of laser module
- Figure 2 is a schematic diagram of the voltage and current at the discontinuous impedance of the transmission line
- 3 is a schematic structural diagram of another laser module
- FIG. 4 is a schematic structural diagram of a laser carrier provided by an embodiment of the present application.
- FIG. 5 is a schematic structural diagram of another laser carrier provided by an embodiment of the present application.
- FIG. 6 is a schematic structural diagram of a laser module provided by an embodiment of the present application.
- FIG. 7 is a schematic structural diagram of another laser module provided by an embodiment of the present application.
- FIG. 8 is a flowchart of a method for manufacturing a laser carrier provided by an embodiment of the present application.
- FIG. 9 is a flowchart of another method for manufacturing a laser carrier provided by an embodiment of the present application.
- Figure 10 and Figure 11 are schematic diagrams of the product structure obtained after performing each step in Figure 9;
- FIG. 12 is a flowchart of another method for manufacturing a laser carrier provided by an embodiment of the present application.
- Figure 13 and Figure 14 are schematic diagrams of the product structure obtained after each step in Figure 12 is performed;
- 15 is a flowchart of a method for assembling a laser module provided by an embodiment of the application.
- FIG. 16 , FIG. 17 , and FIG. 18 are schematic diagrams of product structures obtained after each step in FIG. 15 is performed.
- orientation terms such as “upper” and “lower” are defined relative to the orientation in which the components in the drawings are schematically placed. It should be understood that these directional terms are relative concepts, and they are used for relative In the description and clarification of the drawings, it may change correspondingly according to the change of the orientation in which the components are placed in the drawings.
- FIG. 1 is a schematic structural diagram of a laser module. As shown in FIG. 1 , the laser module includes: a substrate 01 , and a laser chip 011 disposed on the first surface of the substrate 01 .
- the substrate 01 is, for example, a silicon substrate.
- the laser chip 011 is, for example, a semiconductor laser (Laser Diode, LD) chip, including: a first pole 012 and a second pole, the laser chip 011 is connected to the signal line 021 through the first pole, and is welded to the substrate through the second pole 01 on.
- LD Laser Diode
- the signal line 021 is disposed on, for example, a flexible printed circuit board (Flexible Printed Circuit Board, FPBC) 02, and the signal line 021 is used to transmit a signal to the laser chip, so that the laser chip 011 emits laser light.
- the flexible circuit board 02 is mounted on the substrate 01, for example.
- the impedance of the transmission line (eg, the signal line 021 ) on the flexible circuit board is, for example, 50 ⁇ , and the impedance of the laser chip is, for example, 10 ⁇ .
- the transmission line Z1 represents the laser chip 011 in FIG. 1
- the transmission line Z2 represents the signal line 021 in FIG. 1 .
- V in is the input voltage of the signal line
- V ref is the reflected voltage
- V trans is the output voltage on the laser chip.
- I in is the input current on the signal line
- I ref is the reflected voltage
- I trans is the output current on the laser chip.
- Z 1 is the impedance of the laser chip, then Z 1 satisfies:
- Z 2 is the input impedance of the signal line, then Z 2 satisfies:
- the impedance of the signal line is 50 ⁇
- the impedance of the laser is generally around 10 ⁇
- the impedance values are far different (that is, the impedances do not match).
- the reflection of the signal will cause the transmission power of the signal to decrease. Therefore, it is generally necessary to design the impedance matching of the signal transmission link, so as to improve the transmission efficiency of the signal.
- the laser in order to reduce the reflection of the signal at the laser, the laser can be connected in series with a resistor to increase its impedance value to achieve impedance matching.
- the laser module further includes: a terminal resistor 015 .
- the impedance of the terminating resistor 015 is, for example, 40 ⁇ , and the terminating resistor 015 can be soldered on the substrate 01 through the pads (013, 014).
- One end of the resistor 015 is connected to the laser chip 011 through the first wire 016, and the other end is electrically connected to the signal wire 021 through the second wire 017, so that the resistor 015 is connected in series between the laser chip 011 and the signal wire 021.
- an additional terminal resistor needs to be mounted on the substrate, and the terminal resistor needs to be accurately mounted at the corresponding position during processing, and a wire needs to be provided on each side of the resistor for connecting the laser chip respectively.
- 011 and signal line 021 the process is complex, which increases the difficulty of processing and is not conducive to mass production.
- the laser module includes: a substrate 01 , a laser array 010 and a circuit board 02 disposed on the first surface of the substrate 01 .
- the laser array 010 is welded on the substrate 01 , and there are a plurality of laser chips 011 on the laser array 010 .
- the circuit board 02 is provided with a plurality of signal lines 021 .
- the first pole 012 of each laser chip 011 is electrically connected to the signal line 021 through a first wire 016, and the laser array 010 is connected to the circuit board 02 through a second wire 017 to realize a laser chip 011 and circuit board 02 share the same ground.
- a resistor can be connected in series with one end of the signal line close to the laser to achieve impedance matching.
- the laser module further includes: a resistor 015 , which is arranged on the circuit board 02 and is connected in series with the signal line 021 .
- the signal line 021 includes: a first sub-section 0211 and a second sub-section 0212 arranged at intervals, and the resistor 015 is, for example, arranged in the gap between the first sub-section 0211 and the second sub-section 0212 , and are respectively electrically connected to the first sub-section 0211 and the second sub-section 0212 .
- the above-mentioned embodiment makes the design difficulty and processing difficulty of the circuit board 02 more difficult, and increases the processing cost of the circuit board 02 .
- the embodiments of the present application provide an improved laser carrier. As shown in FIG. 4 and FIG. 5 , a first conductive layer 101 and a second conductive layer 102 are provided on the first surface of the laser carrier 10 , and the first conductive layer 101 and the second conductive layer 102 are arranged at intervals.
- the embodiments of the present application do not limit the material of the laser carrier.
- the laser carrier may be made of materials with better heat dissipation properties, such as aluminum nitride (AlN). Thus, the heat dissipation performance of the laser carrier is improved.
- the first conductive layer 101 can be used as the cathode of the carrier, for example, and the second conductive layer 102 can be used as the anode of the carrier, for example. As shown in FIG. 6 and FIG. 7 , the first conductive layer 101 may be electrically connected to the first signal line 201 , and the second conductive layer 102 may be electrically connected to the second signal line 202 .
- the embodiments of the present application do not limit the materials of the first conductive layer 101 and the second conductive layer 102.
- the first conductive layer 101 and the second conductive layer 102 can be made of metal materials, such as gold (Au) ).
- the laser carrier 10 is used to carry a laser chip 104 , the laser chip 104 is disposed on the first conductive layer 101 , and the laser chip 104 is connected to the first conductive layer 101 . It is electrically connected to the second conductive layer 102 .
- the laser chip 104 involved in the embodiments of the present application may be a semiconductor laser chip. When the laser chip is excited by the current, it will emit laser light.
- an appropriate resistor needs to be connected to the laser chip 104 in series, so that the radio frequency signal on the transmission line is transmitted to the laser chip 104 as much as possible.
- the impedance of the transmission line is 50 ohms.
- a 40 ohm resistor needs to be connected in series on the laser chip 104. matching resistors.
- the sum of the impedance of the laser chip and the impedance of the thin film resistor is basically equal to the impedance of the transmission line, so that when the radio frequency signal on the transmission line is transmitted to the laser chip, basically no reflection occurs.
- the laser carrier is further provided with: a thin film resistor 105, the thin film resistor 105 is formed on the first surface of the laser carrier, and the thin film resistor 105 passes through the first surface of the laser carrier.
- the conductive layer 101 or the second conductive layer 102 is electrically connected to the laser chip 104 .
- the thin film resistor 105 is connected in series with the laser chip 104 through the first conductive layer 101 .
- the thin film resistor 105 is connected in series with the laser chip 104 through the second conductive layer 102 .
- the embodiments of the present application do not limit the structure and process of the thin film resistor 105 .
- the thin film resistor 105 can be formed by electroplating a material with a certain resistivity on the surface of the carrier.
- the material of the thin film resistor 105 may be tantalum nitride (TaN).
- the thin film resistor 105 and the first conductive layer 101 or the second conductive layer 102 are all disposed on the first surface of the laser carrier, and the thin film resistor 105 and the first conductive layer 101 and the The second conductive layers 102 are located on the same plane, for example.
- the thin film resistor 105 occupies a small space and is easy to form.
- the thin film resistor 105 occupies a small space and is easy to form.
- a layer of titanium tungsten may also be plated on the first surface of the laser carrier prior to plating the thin film resistor, and then the thin film resistor may be attached to the titanium tungsten layer.
- the embodiments of the present application do not limit the structures of the first conductive layer 101 and the second conductive layer 102 .
- the first conductive layer 101 or the second conductive layer 102 includes at least two sub-conductive layers disposed at intervals, and the thin film resistor 105 is disposed in the gap between the two sub-conductive layers , and the two ends of the thin film resistor 105 are respectively connected to the two sub-conductive layers.
- the second conductive layer 102 is a complete whole, and the first conductive layer 101 includes: a first sub-conductive layer 1011 and a second sub-conductive layer 1012 arranged at intervals.
- the thin film resistor 105 is disposed in the gap between the first sub-conductive layer 1011 and the second sub-conductive layer 1012, and one end of the thin-film resistor 105 is connected to the first sub-conductive layer 1011, The other end is connected to the second sub-conducting layer 1012 .
- the first conductive layer 101 is a complete whole
- the second conductive layer 102 includes: a third sub-conductive layer 1021 and a fourth sub-conductive layer 1022 arranged at intervals.
- the thin-film resistor 105 is disposed in the gap between the third sub-conductive layer 1021 and the fourth sub-conductive layer 1022, and one end of the thin-film resistor 105 is connected to the third sub-conductive layer 1021, and the other end is connected to the third sub-conductive layer 1021. connected to the fourth sub-conducting layer 1022 .
- the thin film resistor 105 can also be disposed on the side of the first conductive layer 101 away from the second conductive layer 102, or the thin film resistor 105 can be disposed on the second conductive layer 102 away from the second conductive layer 102.
- One side of the first conductive layer 101 is electrically connected to the second conductive layer 102 and the second signal line 202 respectively.
- the embodiment of the present application does not limit the electrical connection manner of the laser chip 104 .
- the laser chip 104 includes, for example, a first pole and a second pole 103.
- the first pole of the laser chip 104 can be connected to the first conductive layer 101 by soldering, and the laser
- the second pole 103 of the chip 104 is electrically connected to the second conductive layer 102 through, for example, a first wire 106 .
- solder is not limited in the embodiments of the present application.
- the solder may be a copper-tin alloy (Cu80Sn20).
- an embodiment of the present application further provides a laser module, which includes the laser carrier as described above, and a first conductive layer 101 and a second conductive layer disposed on the laser carrier. 102 , a laser chip 104 and a thin film resistor 105 .
- the laser module further includes: a circuit board 20 .
- the circuit board 20 is provided with a first signal line 201 and a second signal line 202 .
- the first conductive layer 101 is electrically connected to the first signal line 201 through, for example, a second wire 107
- the second conductive layer 102 is connected to the second signal wire 202 through, for example, a third wire 108 .
- the first signal line 201 and the second signal line 202 are used to transmit signals to the laser chip 104 so that the laser chip 104 emits laser light.
- the first conductive layer 101 is, for example, a carrier cathode
- the second conductive layer 102 is, for example, a carrier anode.
- the first pole of the laser chip 104 is connected to the first conductive layer 101 by soldering, and the second pole 103 of the laser chip 104 is electrically connected to the second conductive layer 102 through the first wire 106, for example.
- the first pole of the laser chip 104 is, for example, a cathode, and the second pole 103 of the laser chip 104 is, for example, an anode.
- the signal transmitted by the second signal line 202 may be transmitted to the first signal line 201 through the second conductive layer 102 , the laser chip 104 , and the first conductive layer 101 in sequence to form a loop.
- the circuit board 20 may be a flexible circuit board.
- the circuit board 20 is further provided with a first pad 2011 and a second pad 2021, the first pad 2011 is electrically connected to the first signal line 201, and the second pad 2021 is connected to the second signal Line 202 is electrically connected.
- first conductive layer 101 and the first signal line 201 are electrically connected, and the first conductive layer 101 and the first pad 2011 may be connected through the second wire 107 to realize the electrical connection between the first conductive layer 101 and the first signal line 201 connect.
- the second conductive layer 102 and the second signal line 202 are electrically connected, and the second conductive layer 102 and the second pad 2021 may be connected through the third wire 108 to realize the electrical connection between the second conductive layer 102 and the second signal line 202 .
- the second conductive layer 102 is a complete whole, and the first conductive layer 101 includes: a first sub-conductive layer 1011 and a second sub-conductive layer 1012 arranged at intervals.
- the first sub-conducting layer 1011 is electrically connected to the first signal line 201 through the second wire 107
- the laser chip 104 is connected to the second sub-conducting layer 1012 by soldering
- the layer 102 is connected to the laser chip 104 through the first wire 106
- the second conductive layer 102 is electrically connected to the second signal wire 202 through the third wire 108 .
- the thin-film resistor 105 is disposed in the gap between the first sub-conductive layer 1011 and the second sub-conductive layer 1012, and one end of the thin-film resistor 105 is connected to the first sub-conductive layer 1011, and the other end is connected to the first sub-conductive layer 1011. connected to the second sub-conducting layer 1012 .
- the first sub-conductive layer 1011 and the second sub-conductive layer 1012 can be used as electrical connectors of the thin film resistor 105, for example, and the thin film resistor 105 can communicate with the first signal through the first sub-conductive layer 1011.
- the line 201 is electrically connected, and is electrically connected with the laser chip 104 through the second sub-conducting layer 1012 , so as to be connected in series in the line between the laser chip 104 and the first signal line 201 and the second signal line 202 .
- the first conductive layer 101 is an integral whole
- the second conductive layer 102 includes: a third sub-conductive layer 1021 and a fourth sub-conductive layer 1022 arranged at intervals.
- the first conductive layer 101 is electrically connected to the first signal line 201 through the second wire 107
- the laser chip 104 is connected to the first conductive layer 101 by soldering
- the third sub-conductive layer 1021 is connected to the first conductive layer 101 by soldering.
- the first wire 106 is electrically connected to the laser chip 104
- the fourth sub-conductive layer 1022 is electrically connected to the second signal line 202 .
- the thin-film resistor 105 is disposed in the gap between the third sub-conductive layer 1021 and the fourth sub-conductive layer 1022, and one end of the thin-film resistor 105 is connected to the third sub-conductive layer 1021, and the other end is connected to the third sub-conductive layer 1021. connected to the fourth sub-conducting layer 1022 .
- the thin film resistor 105 can be electrically connected to the laser chip 104 through the third sub-conductive layer 1021, and electrically connected to the second signal line 202 through the fourth sub-conductive layer 1022, so as to be connected in series between the laser chip 104 and the first signal line 202. In the line between the signal line 201 and the second signal line 202 .
- the embodiments of the present application do not limit the relative position between the thin film resistor 105 and the laser chip 104 .
- the thin film resistor 105 should be as close to the laser chip 104 as possible.
- the distance between the thin film resistor 105 and the laser chip 104 is less than 0.18 mm.
- the embodiment of the present application also provides a method for manufacturing a laser carrier, as shown in FIG. 8 , the method includes:
- the laser carrier is used to carry a laser chip, the first conductive layer 101 and the second conductive layer 102 are spaced apart, and the thin film resistor 105 is connected to the first conductive layer or the second conductive layer through the first conductive layer or the second conductive layer.
- the laser chips are connected in series.
- the first conductive layer 101 includes a first sub-conductive layer 1011 and a second sub-conductive layer 1012 arranged at intervals, and the first conductive layer is formed on the first surface of the laser carrier.
- the first conductive layer 101, the second conductive layer 102 and the thin film resistor 105 include:
- the thin film resistor 105 is formed on the first surface of the laser carrier.
- the thin film resistor 105 can be formed on the first surface of the laser carrier by electroplating.
- a layer of titanium tungsten may also be plated on the first surface of the laser carrier prior to plating the thin film resistor, and then the thin film resistor may be attached to the titanium tungsten layer.
- the first sub-conductive layer 1011 and the second sub-conductive layer 1012 are located on both sides of the thin-film resistor 105, so that one end of the thin-film resistor 105 is connected to the first sub-conductive layer 1011, and the other end is connected to the second sub-conductive layer 1011.
- the conductive layer 1012 is connected.
- the conductive material may be a conductive metal, such as gold (Au).
- the second conductive layer 102 includes a third sub-conductive layer 1021 and a fourth sub-conductive layer 1022 arranged at intervals.
- a layer of titanium tungsten may also be plated on the first surface of the laser carrier prior to plating the thin film resistor, and then the thin film resistor may be attached to the titanium tungsten layer.
- the third sub-conductive layer 1021 and the fourth sub-conductive layer 1022 are located on both sides of the thin-film resistor 105, so that one end of the thin-film resistor 105 is connected to the third sub-conductive layer 1021, and the other end is connected to the thin-film resistor 105.
- the fourth sub-conductive layer 1022 is connected.
- Embodiments of the present application also provide a method for assembling a laser module. As shown in Figure 15, the method includes:
- the first conductive layer 101 and the second conductive layer 102 are arranged at intervals, and the thin film resistor 105 is connected in series with the laser chip through the first conductive layer or the second conductive layer.
- the installation of the laser chip 104 on the first conductive layer 101 includes:
- Solder is arranged on the first conductive layer 101 , the laser chip 104 is placed in the solder area, and the solder is heated and melted, so that the laser chip 104 is connected to the first conductive layer 101 .
- the first conductive layer 101 includes a first sub-conductive layer 1011 and a second sub-conductive layer 1012.
- Solder 105 can be provided on the second sub-conductive layer 1012 to connect the laser chip 104 Soldered on the second sub-conductive layer 1012 by solder 105 .
- the first conductive layer 101 is a whole, solder 105 can be provided on the first conductive layer 101 , and the laser chip 104 is welded on the first conductive layer 101 through the solder 105 .
- the connecting the laser chip 104 with the second conductive layer 102 includes:
- the laser chip 104 and the second conductive layer 102 are connected by first wires 106 .
- the second conductive layer 102 is a whole, and one end of the first wire 106 can be directly connected to the second conductive layer.
- the second conductive layer 102 includes a third sub-conductive layer 1021 and a fourth sub-conductive layer 1022, and one end of the first wire 106 can be connected to the third sub-conductive layer.
- the electrical connection between the first conductive layer 101 and the first signal line 201 and the connection between the second conductive layer 102 and the second signal line 202 include:
- the first conductive layer 101 and the first signal line 201 are connected by a second wire 107
- the second conductive layer 102 and the second signal wire 202 are connected by a third wire 108 .
- the second conductive layer 102 is a complete whole, and the first conductive layer 101 includes: a first sub-conductive layer 1011 and a second sub-conductive layer 1012 arranged at intervals, The first sub-conductive layer 1011 is connected to the first signal line 201 through the second wire 107 , and the second conductive layer 102 is connected to the second signal wire 202 through the third wire 108 .
- the first conductive layer 101 is a complete whole
- the second conductive layer 102 includes: a third sub-conductive layer 1021 and a fourth sub-conductive layer 1022 arranged at intervals,
- the first conductive layer 101 is connected to the first signal line 201 through the second wire 107
- the fourth sub-conductive layer 1022 is electrically connected to the second signal wire 202 through the third wire 108 .
- impedance matching is achieved by directly forming the thin film resistor on the laser carrier, and meanwhile, the thin film resistor occupies a small space and has a simple process, which is beneficial to mass production.
- Embodiments of the present application further provide a light emitting assembly, where the light emitting assembly includes the above-mentioned laser module.
- the thin film resistor on the laser carrier is directly formed on the carrier, occupies a small space, and has a simple process, thereby reducing the cost of the entire light emitting component and improving the output power of the laser chip.
- Embodiments of the present application further provide an optical module, where the optical module includes the above-mentioned light emitting component.
- the thin film resistor on the laser carrier is directly formed on the carrier, occupies a small space, and has a simple process, thereby reducing the cost of the entire optical module and improving the output power of the laser chip.
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Abstract
一种激光器载体(10)及其制作方法,激光器载体(10)用于承载激光器芯片(104),激光器载体(10)的第一表面上设有:第一导电层(101),第一导电层(101)与第一信号线(201)电连接;第二导电层(102),第二导电层(102)与第二信号线(202)电连接,且第二导电层(102)与第一导电层(101)间隔设置,其中,激光器芯片(104)设置在第一导电层(101)上,且激光器芯片(104)与第二导电层(102)电连接;薄膜电阻(105),薄膜电阻(105)成型在激光器载体(10)的第一表面上,且薄膜电阻(105)通过第一导电层(101)或第二导电层(102)与激光器芯片(104)电连接。由此,通过在激光器载体(10)上直接成型薄膜电阻(105),实现对激光器的阻抗匹配,同时薄膜电阻(105)占用空间小,加大了集成度,且工艺简单,有利于大规模生产。
Description
本申请要求于2021年01月25日提交国家知识产权局、申请号为202110097958.7、发明名称为“激光器载体及其制作方法”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。
本申请实施例涉及半导体领域,尤其涉及一种激光器载体及其制作方法。
目前,随着5G移动通信、虚拟现实和云计算等技术的不断涌现,人们对通信带宽的需求呈爆炸式增长。
在光发射端,可以将电信号和直流偏置信号经驱动器或其他方式混合后直接加载到激光器(Laser)上,通过改变激光器的输入电流的大小来改变激光器的输出光功率大小。其中,为了使基于激光器的发射模块的带宽尽量高,在封装激光器芯片时需要匹配激光器芯片的阻抗。
例如,常用的传输线阻抗为50Ω,而激光器芯片的阻抗一般在10Ω左右,为实现激光器芯片的阻抗匹配,可以将激光器芯片与一40Ω的终端电阻串联,提高其阻抗值,实现50Ω阻抗匹配,其中,可以将该终端电阻焊接在基底上,并在终端电阻两边各引出一根导线,分别用于连接激光器芯片和信号线,组成激光器模组。
然而,该激光模组的基底上需要额外贴装一个终端电阻,占用空间较大,工艺复杂,不利于大规模生产。
发明内容
本申请实施例提供一种激光器载体及其制作方法,解决了激光器占用空间大、工艺复杂的问题。
为达到上述目的,本申请实施例采用如下技术方案:
本申请实施例的第一方面,提供一种激光器载体,该激光器载体用于承载激光器芯片,该激光器载体的第一表面上设有:第一导电层,该第一导电层与第一信号线电连接;第二导电层,该第二导电层与第二信号线电连接,且该第二导电层与该第一导电层间隔设置,其中,该激光器芯片设置在该第一导电层上,且该激光器芯片与该第二导电层电连接;薄膜电阻,该薄膜电阻成型在该激光器载体的第一表面上,且该薄膜电阻通过该第一导电层或该第二导电层与激光器芯片电连接。由此,通过在激光器载体上直接成型薄膜电阻,实现阻抗匹配,同时薄膜电阻占用空间小,且工艺简单,有利于大规模生产。
一种可选的实现方式中,该第一导电层包括:间隔设置的第一子导电层和第二子导电层,该第一子导电层与该第一信号线电连接,该第二子导电层上设有该激光器芯片;其中,该薄膜电阻设置在该第一子导电层和该第二子导电层之间的间隙中,且该 薄膜电阻一端与该第一子导电层连接,另一端与该第二子导电层连接。由此,薄膜电阻可以通过第一导电层和激光器芯片串联连接,实现阻抗匹配,此时,激光器芯片的阻抗和薄膜电阻的阻抗之和与传输线上的阻抗基本相等,使得传输线上的射频信号传输到激光器芯片时,基本不会发生反射。
一种可选的实现方式中,该第二导电层包括:间隔设置的第三子导电层和第四子导电层,该第三子导电层与该激光器芯片电连接,该第四子导电层与该第二信号线电连接;该薄膜电阻设置在该第三子导电层和该第四子导电层之间的间隙中,且该薄膜电阻一端与该第三子导电层连接,另一端与该第四子导电层连接。由此,薄膜电阻可以通过第二导电层和激光器芯片串联连接,实现激光器芯片和传输线的阻抗匹配,此时,激光器芯片的阻抗和薄膜电阻的阻抗之和与传输线上的阻抗基本相等,使得传输线上的射频信号传输到激光器芯片时,基本不会发生反射。
一种可选的实现方式中,该激光器芯片通过第一导线与该第二导电层连接。由此,实现激光器芯片与第二导电层的电连接,且连接方式简单,有利于批量化生产。
一种可选的实现方式中,该激光器芯片通过焊料与该第一导电层焊接连接。由此,实现激光器芯片与第一导电层的电连接,且连接方式简单,有利于批量化生产。
一种可选的实现方式中,该第一导电层通过第二导线与该第一信号线连接,该第二导电层通过第三导线与该第二信号线连接。由此,实现该第一导电层与第一信号线的电连接,并实现了第二导电层和第二信号线的电连接,且连接方式简单,有利于批量化生产。
一种可选的实现方式中,该第一信号线和该第二信号线设置在电路板上。由此,可以将第一信号线和第二信号线设置在载体之外,并分别通过导线连接第一信号线、第二信号线和设置在载体上的器件,能够节省载体空间。
一种可选的实现方式中,该薄膜电阻通过电镀的方式成型在该激光器载体上。由此,薄膜电阻的成型工艺简单,易于成型。
本申请实施例的第二方面,提供一种激光器载体的制作方法,该方法包括:在激光器载体的第一表面上成型第一导电层、第二导电层和薄膜电阻,该第一导电层和该第二导电层间隔设置,其中,所述激光器载体用于承载激光器芯片,该薄膜电阻通过该第一导电层或该第二导电层与该激光器芯片电连接。由此,通过在激光器载体上直接成型薄膜电阻,实现阻抗匹配,同时薄膜电阻占用空间小,且工艺简单,有利于大规模生产。
一种可选的实现方式中,该第一导电层包括间隔设置的第一子导电层和第二子导电层,该在激光器载体的第一表面上成型第一导电层、第二导电层和薄膜电阻,包括:在所述激光器载体的第一表面上成型所述薄膜电阻;在所述激光器载体的第一表面上成型所述第一子导电层、所述第二子导电层和所述第二导电层,使得所述薄膜电阻一端与所述第一子导电层连接,另一端与所述第二子导电层连接。由此,实现了将薄膜电阻和第一导电层串联连接,实现阻抗匹配,此时,激光器芯片的阻抗和薄膜电阻的阻抗之和与传输线上的阻抗基本相等,使得传输线上的射频信号传输到激光器芯片时,基本不会发生反射。
一种可选的实现方式中,该第二导电层包括间隔设置的第三子导电层和第四子导电层,该在激光器载体的第一表面上成型第一导电层、第二导电层和薄膜电阻,包括: 在所述激光器载体的第一表面上成型所述薄膜电阻;在所述激光器载体的第一表面上成型所述第一导电层、所述第三子导电层和所述第四子导电层,使得所述薄膜电阻一端与所述第三子导电层连接,另一端与所述第四子导电层连接。由此,实现了薄膜电阻和第二导电层串联连接,实现阻抗匹配,此时,激光器芯片的阻抗和薄膜电阻的阻抗之和与传输线上的阻抗基本相等,使得传输线上的射频信号传输到激光器芯片时,基本不会发生反射。
图1为一种激光器模组的结构示意图;
图2为传输线阻抗不连续处电压电流示意图;
图3为另一种激光器模组的结构示意图;
图4为本申请实施例提供的一种激光器载体的结构示意图;
图5为本申请实施例提供的另一种激光器载体的结构示意图;
图6为本申请实施例提供的一种激光器模组的结构示意图;
图7为本申请实施例提供的另一种激光器模组的结构示意图;
图8为本申请实施例提供的一种激光器载体的制作方法流程图;
图9为本申请实施例提供的另一种激光器载体的制作方法流程图;
图10、图11为执行图9中各步骤后得到的产品结构示意图;
图12为本申请实施例提供的另一种激光器载体的制作方法流程图;
图13、图14为执行图12中各步骤后得到的产品结构示意图;
图15为本申请实施例提供的一种激光器模组的组装方法流程图;
图16、图17、图18分别为执行图15中各步骤后得到的产品结构示意图。
为了使本申请的目的、技术方案和优点更加清楚,下面将结合附图对本申请作进一步地详细描述。
以下,术语“第一”、“第二”等仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中,除非另有说明,“多个”的含义是两个或两个以上。
此外,本申请中,“上”、“下”等方位术语是相对于附图中的部件示意置放的方位来定义的,应当理解到,这些方向性术语是相对的概念,它们用于相对于的描述和澄清,其可以根据附图中部件所放置的方位的变化而相应地发生变化。
图1为一种激光器模组的结构示意图。如图1所示,该激光器模组包括:基底01,以及设置在基底01的第一表面上的激光器芯片011。
该基底01例如为硅基底。该激光器芯片011例如为半导体激光器(Laser Diode,LD)芯片,包括:第一极012和第二极,该激光器芯片011通过第一极与信号线021连接,并通过第二极焊接在该基底01上。
该信号线021例如设置在柔性电路板(Flexible Printed Circuit Board,FPBC)02上,该信号线021用于向该激光器芯片发射信号,使得激光器芯片011发射激光。该柔性电路板02例如贴装在基底01上。
其中,柔性电路板上的传输线(例如信号线021)的阻抗例如为50Ω,该激光器芯片的阻抗例如为10Ω。
如图2所示,传输线Z1和传输线Z2之间的阻抗突变处,需遵循基尔霍夫定律,分界面两边的电压不能突变,流入分界面的电流与流出分界面的电流相等。此处,传输线Z1表示图1中的激光器芯片011,传输线Z2表示图1中的信号线021。
其中,根据基尔霍夫定律:
V
in+V
ref=V
trans (1)
其中,V
in为信号线输入电压,V
ref为反射电压,V
trans为激光器芯片上的输出电压。
I
in-I
ref=I
trans (2)
其中,I
in为信号线上的输入电流,I
ref为反射电压,I
trans为激光器芯片上的输出电流。
其中,Z
1为激光器芯片的阻抗,则Z
1满足:
Z
2为信号线的输入阻抗,则Z
2满足:
由式(1)-(4)可得到反射系数Γ为:
其中,信号线阻抗为50Ω,而激光器的阻抗一般在10Ω左右,阻抗值相差较远(即阻抗不匹配),将Z
2=50,Z
1=10带入式(5)可以得到反射系数Γ为2/3。
信号的反射会导致信号的传输功率降低。因此,一般需要对信号的传输链路进行阻抗匹配的设计,从而提升信号的传输效率。其中,为减少激光器处信号的反射,可以将激光器与一电阻串联,提高其阻抗值,实现阻抗匹配。
如图1所示,该激光器模组还包括:终端电阻015。该终端电阻015的阻抗例如为40Ω,该终端电阻015可以通过焊盘(013、014)焊接在该基底01上。
其中,该电阻015一端通过第一导线016与激光器芯片011连接,另一端则通过第二导线017与信号线021电连接,使得该电阻015串联在该激光器芯片011和该信号线021之间。
然而,上述实施例需要额外在基底上贴装一个终端电阻,且在加工的时候需要将该终端电阻准确贴装在对应位置,还需要在电阻两边各设置一根导线,分别用于连接激光器芯片011和信号线021,工艺复杂,增加了加工难度,不利于大规模生产。
在另一些实施例中,如图3所示,该激光器模组包括:基底01,以及设置在基底01的第一表面上的激光器阵列010、电路板02。
参见图3,所述激光器阵列010焊接在该基底01上,所述激光器阵列010上有多个激光器芯片011。所述电路板02上设有多条信号线021。
其中,每个所述激光器芯片011的第一极012通过第一导线016与所述信号线021 电连接,且所述激光器阵列010通过第二导线017与所述电路板02连接,实现激光器芯片011和电路板02共地。
为减少激光器处信号的反射,可以在信号线靠近激光器的一端串联一电阻,实现阻抗匹配。
如图3所示,该激光器模组还包括:电阻015,该电阻设置在该电路板02上,并和该信号线021串联连接。
其中,该信号线021包括:间隔设置的第一子部0211和第二子部0212,所述电阻015例如设置在所述第一子部0211和所述第二子部0212之间的间隙中,并分别与所述第一子部0211和所述第二子部0212电连接。
然而,上述实施例使电路板02的设计难度和加工难度变大,增加了电路板02的加工成本。
为此,本申请实施例提供一种改进的激光器载体。如图4、图5所示,该激光器载体10的第一表面上设有第一导电层101和第二导电层102,所述第一导电层101和所述第二导电层102间隔设置。
本申请实施例对该激光器载体的材质不做限制,在一些实施例中,该激光器载体可以采用氮化铝(AlN)等散热性能较好的材料。由此,提高了激光器载体的散热性能。
其中,所述第一导电层101例如可以作为载体的阴极,第二导电层102例如可以作为载体的阳极。如图6、图7所示,所述第一导电层101可以与第一信号线201电连接,所述第二导电层102与第二信号线202电连接。
本申请实施例对该第一导电层101和第二导电层102的材质不做限制,在一些实施例中,该第一导电层101和第二导电层102可以采用金属材料,例如金(Au)。
如图4、图5所示,该激光器载体10用于承载激光器芯片104,所述激光器芯片104设置在所述第一导电层101上,且所述激光器芯片104与所述第一导电层101和所述第二导电层102电连接。
本申请实施例涉及的激光器芯片104可以为半导体激光器芯片。激光器芯片受到电流的激励后,会发出激光。
为减少激光器芯片104处信号的反射,需要给激光器芯片104串联一个合适的电阻,使得传输线上的射频信号尽量多地传输到激光器芯片104上。
通常,传输线的阻抗为50欧姆,为了保证激光器芯片104的阻抗与传输线上的阻抗匹配,即传输线上的射频信号尽量多地传输到激光器芯片104上,需要在激光器芯片104上串联一个40欧姆的匹配电阻。此时,激光器芯片的阻抗和薄膜电阻的阻抗之和与传输线上的阻抗基本相等,使得传输线上的射频信号传输到激光器芯片时,基本不会发生反射。
如图4、图5所示,该激光器载体上还设有:薄膜电阻105,所述薄膜电阻105例如成型在所述激光器载体的第一表面上,且所述薄膜电阻105通过所述第一导电层101或所述第二导电层102与激光器芯片104电连接。
如图4所示,薄膜电阻105通过所述第一导电层101与激光器芯片104串联连接。
如图5所示,薄膜电阻105通过所述第二导电层102与激光器芯片104串联连接。
其中,本申请实施例对该薄膜电阻105的结构和工艺不做限制。在一些实施例中,该薄膜电阻105可以采用电镀的方法将具有一定电阻率的材料电镀于载体表面制成。该薄膜电阻105的材料可以是氮化钽(TaN)。
所述薄膜电阻105与所述第一导电层101或所述第二导电层102均设置在所述激光器载体的第一表面上,且所述薄膜电阻105与所述第一导电层101和所述第二导电层102例如位于同一平面。
由此,该薄膜电阻105占用空间小,易于成型,通过在激光器载体上直接成型薄膜电阻,不仅实现阻抗匹配,同时减小空间的占用,且工艺简单,有利于大规模生产。
在一些实施例中,在电镀薄膜电阻之前,还可以在激光器载体的第一表面上电镀一层钨化钛(TiW),接着使得薄膜电阻附着在该钨化钛层上。
本申请实施例对该第一导电层101和第二导电层102的结构不做限制。在一些实施例中,所述第一导电层101或所述第二导电层102包括至少2个间隔设置的子导电层,所述薄膜电阻105设置在2个所述子导电层之间的间隙中,且所述薄膜电阻105两端分别与所述2个子导电层连接。
如图4所示,所述第二导电层102为一个完整的整体,所述第一导电层101包括:间隔设置的第一子导电层1011和第二子导电层1012。
其中,所述薄膜电阻105设置在所述第一子导电层1011和所述第二子导电层1012之间的间隙中,且所述薄膜电阻105一端与所述第一子导电层1011连接,另一端与所述第二子导电层1012连接。
如图5所示,所述第一导电层101为一个完整的整体,所述第二导电层102包括:间隔设置的第三子导电层1021和第四子导电层1022。
所述薄膜电阻105设置在所述第三子导电层1021和所述第四子导电层1022之间的间隙中,且所述薄膜电阻105一端与所述第三子导电层1021连接,另一端与所述第四子导电层1022连接。
在本申请其他的实施例中,也可以将薄膜电阻105设置在第一导电层101远离所述第二导电层102的一侧,或者可以将薄膜电阻105设置在第二导电层102远离所述第一导电层101的一侧,并分别与第二导电层102和第二信号线202电连接。
本申请实施例对所述激光器芯片104的电连接方式不做限制。其中,所述激光器芯片104例如包括第一极和第二极103,在一些实施例中,所述激光器芯片104的第一极可以通过焊料与所述第一导电层101焊接连接,所述激光器芯片104的第二极103例如通过第一导线106与所述第二导电层102电连接。
本申请实施例对该焊料的材质不做限制。在一些实施例中,该焊料可以采用铜锡合金(Cu80Sn20)。
如图6、图7所示,本申请实施例还提供一种激光器模组,该激光器模组包括如上所述的激光器载体,以及设置在激光器载体上的第一导电层101、第二导电层102、激光器芯片104和薄膜电阻105。
该激光器模组还包括:电路板20。电路板20上设有第一信号线201和第二信号线202。
所述第一导电层101例如通过第二导线107与所述第一信号线201电连接,所述 第二导电层102例如通过第三导线108与所述第二信号线202连接。第一信号线201和第二信号线202用于向激光器芯片104传输信号,使得所述激光器芯片104发射激光。
其中,第一导电层101例如为载体阴极,第二导电层102例如为载体阳极。所述激光器芯片104的第一极通过焊料与所述第一导电层101焊接连接,所述激光器芯片104的第二极103例如通过第一导线106与所述第二导电层102电连接,所述激光器芯片104的第一极例如为阴极,所述激光器芯片104的第二极103例如为阳极。
其中,第二信号线202传输的信号可以依次经过第二导电层102、激光器芯片104、第一导电层101传输至第一信号线201,以形成回路。
所述电路板20可以是柔性电路板。其中,该电路板20上例如还设有第一焊盘2011和第二焊盘2021,该第一焊盘2011与第一信号线201电连接,该第二焊盘2021与所述第二信号线202电连接。
其中,第一导电层101和第一信号线201电连接,可以是通过第二导线107连接第一导电层101和第一焊盘2011,实现第一导电层101和第一信号线201的电连接。
第二导电层102和第二信号线202电连接,可以是通过第三导线108连接第二导电层102和第二焊盘2021,实现第二导电层102和第二信号线202的电连接。
如图6所示,所述第二导电层102为一个完整的整体,所述第一导电层101包括:间隔设置的第一子导电层1011和第二子导电层1012。
其中,所述第一子导电层1011通过第二导线107与所述第一信号线201电连接,所述激光器芯片104通过焊料与所述第二子导电层1012焊接连接,所述第二导电层102通过第一导线106与所述激光器芯片104连接,且所述第二导电层102通过第三导线108与第二信号线202电连接。
所述薄膜电阻105设置在所述第一子导电层1011和所述第二子导电层1012之间的间隙中,且所述薄膜电阻105一端与所述第一子导电层1011连接,另一端与所述第二子导电层1012连接。
此时,所述第一子导电层1011和所述第二子导电层1012例如可以作为该薄膜电阻105的电连接件,该薄膜电阻105可以通过第一子导电层1011与所述第一信号线201电连接,并通过第二子导电层1012与激光器芯片104电连接,从而串联在激光器芯片104与第一信号线201和第二信号线202之间的线路中。
如图7所示,所述第一导电层101为一个完整的整体,所述第二导电层102包括:间隔设置的第三子导电层1021和第四子导电层1022。
其中,所述第一导电层101通过第二导线107与第一信号线201电连接,所述激光器芯片104通过焊料与所述第一导电层101焊接连接,所述第三子导电层1021通过第一导线106与激光器芯片104电连接,所述第四子导电层1022与所述第二信号线202电连接。
所述薄膜电阻105设置在所述第三子导电层1021和所述第四子导电层1022之间的间隙中,且所述薄膜电阻105一端与所述第三子导电层1021连接,另一端与所述第四子导电层1022连接。
此时,该薄膜电阻105可以通过第三子导电层1021与所述激光器芯片104电连接, 并通过第四子导电层1022与第二信号线202电连接,从而串联在激光器芯片104与第一信号线201和第二信号线202之间的线路中。
本申请实施例对所述薄膜电阻105和所述激光器芯片104之间的相对位置不做限定。在本申请实施例中,薄膜电阻105应尽量接近激光器芯片104。本实施例中,所述薄膜电阻105与所述激光器芯片104之间的距离小于0.18mm。
本申请实施例还提供一种激光器载体的制作方法,如图8所示,所述方法包括:
S101、在激光器载体的第一表面上成型第一导电层101、第二导电层102和薄膜电阻105。
其中,所述激光器载体用于承载激光器芯片,所述第一导电层101和所述第二导电层102间隔设置,所述薄膜电阻105通过所述第一导电层或所述第二导电层与激光器芯片串联连接。
其中,在一些实施例中,如图9所示,所述第一导电层101包括间隔设置的第一子导电层1011和第二子导电层1012,所述在激光器载体的第一表面上成型第一导电层101、第二导电层102和薄膜电阻105,包括:
S101a、如图10所示,在所述激光器载体的第一表面上成型所述薄膜电阻105。
其中,可以通过电镀的方式在所述激光器载体的第一表面上成型所述薄膜电阻105。
在一些实施例中,在电镀薄膜电阻之前,还可以在激光器载体的第一表面上电镀一层钨化钛(TiW),接着使得薄膜电阻附着在该钨化钛层上。
S101b、如图11所示,在所述激光器载体的第一表面上涂覆导电材料,形成第一子导电层1011、第二子导电层1012和第二导电层102。
其中,第一子导电层1011、所述第二子导电层1012位于所述薄膜电阻105两侧,使得薄膜电阻105一端与所述第一子导电层1011连接,另一端与所述第二子导电层1012连接。
其中,导电材料可以为导电金属,例如可以是金(Au)。
在另一些实施例中,如图12所示,所述第二导电层102包括间隔设置的第三子导电层1021和第四子导电层1022,所述在激光器载体的第一表面上成型第一导电层101、第二导电层102和薄膜电阻105,包括:
S101c、如图13所示,在所述激光器载体的第一表面上成型薄膜电阻105。
在一些实施例中,在电镀薄膜电阻之前,还可以在激光器载体的第一表面上电镀一层钨化钛(TiW),接着使得薄膜电阻附着在该钨化钛层上。
S101d、如图14所示,在所述激光器载体的第一表面上涂覆导电材料,形成第一导电层101、第三子导电层1021和第四子导电层1022。
其中,所述第三子导电层1021和所述第四子导电层1022位于薄膜电阻105的两侧,使得所述薄膜电阻105一端与所述第三子导电层1021连接,另一端与所述第四子导电层1022连接。
本申请实施例还提供一种激光器模组的组装方法。如图15所示,该方法包括:
S201、在载体的第一表面上成型第一导电层101、第二导电层102和薄膜电阻105。
其中,所述第一导电层101和所述第二导电层102间隔设置,所述薄膜电阻105 通过所述第一导电层或所述第二导电层与所述激光器芯片串联连接。
S202、如图16所示,将激光器芯片104安装在所述第一导电层101上,使得所述激光器芯片104与所述第一导电层101电连接。
其中,所述将激光器芯片104安装在所述第一导电层101上,包括:
在所述第一导电层101上设置焊料,将所述激光器芯片104放置在焊料区域,加热熔化所述焊料,使得所述激光器芯片104与所述第一导电层101连接。
如图16中的(a)所示,第一导电层101包括第一子导电层1011和第二子导电层1012,可以在所述第二子导电层1012上设置焊料105,将激光器芯片104通过焊料105焊接在第二子导电层1012上。
如图16中的(b)所示,第一导电层101为一个整体,可以在所述第一导电层101上设置焊料105,将激光器芯片104通过焊料105焊接在第一导电层101上。
S203、如图17所示,将所述激光器芯片104与所述第二导电层102连接。
其中,所述将所述激光器芯片104与所述第二导电层102连接,包括:
通过第一导线106连接所述激光器芯片104和所述第二导电层102。
如图17中的(a)所示,第二导电层102为一个整体,可以将第一导线106的一端直接与第二导电层连接。
如图17中的(b)所示,第二导电层102包括第三子导电层1021和第四子导电层1022,可以将第一导线106的一端与该第三子导电层连接。
S204、如图18所示,将所述第一导电层101与第一信号线201电连接,并将所述第二导电层102与所述第二信号线202连接。
其中,所述将所述第一导电层101与第一信号线201电连接,并将所述第二导电层102与所述第二信号线202连接,包括:
通过第二导线107连接所述第一导电层101与所述第一信号线201,并通过第三导线108连接所述第二导电层102与所述第二信号线202。
如图18中的(a)所示,所述第二导电层102为一个完整的整体,所述第一导电层101包括:间隔设置的第一子导电层1011和第二子导电层1012,所述第一子导电层1011通过第二导线107与所述第一信号线201连接,所述第二导电层102通过第三导线108与所述第二信号线202连接。
如图18中的(b)所示,所述第一导电层101为一个完整的整体,所述第二导电层102包括:间隔设置的第三子导电层1021和第四子导电层1022,所述第一导电层101通过第二导线107与所述第一信号线201连接,所述第四子导电层1022通过第三导线108与所述第二信号线202电连接。
由此,通过在激光器载体上直接成型薄膜电阻,实现阻抗匹配,同时薄膜电阻占用空间小,且工艺简单,有利于大规模生产。
本申请实施例还提供一种光发射组件,该光发射组件包括如上所述的激光器模组。该激光器载体上的薄膜电阻直接成型在载体上,占用空间小,且工艺简单、从而降低了整个光发射组件成本,并且提高了激光器芯片的输出功率。
本申请实施例还提供一种光模块,该光模块包括上述的光发射组件。该激光器载体上的薄膜电阻直接成型在载体上,占用空间小,且工艺简单、从而降低了整个光模 块的成本,并且提高了激光器芯片的输出功率。
以上所述,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何在本申请揭露的技术范围内的变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以所述权利要求的保护范围为准。
Claims (11)
- 一种激光器载体,其特征在于,所述激光器载体用于承载激光器芯片,所述激光器载体的第一表面上设有:第一导电层,所述第一导电层与第一信号线电连接;第二导电层,所述第二导电层与第二信号线电连接,且所述第二导电层与所述第一导电层间隔设置,其中,所述激光器芯片设置在所述第一导电层上,且所述激光器芯片与所述第二导电层电连接;薄膜电阻,所述薄膜电阻成型在所述激光器载体的第一表面上,且所述薄膜电阻通过所述第一导电层或所述第二导电层与所述激光器芯片电连接。
- 根据权利要求1所述的激光器载体,其特征在于,所述第一导电层包括:间隔设置的第一子导电层和第二子导电层,所述第一子导电层与所述第一信号线电连接,所述第二子导电层上设有所述激光器芯片;其中,所述薄膜电阻设置在所述第一子导电层和所述第二子导电层之间的间隙中,且所述薄膜电阻一端与所述第一子导电层连接,另一端与所述第二子导电层连接。
- 根据权利要求1所述的激光器载体,其特征在于,所述第二导电层包括:间隔设置的第三子导电层和第四子导电层,所述第三子导电层与所述激光器芯片电连接,所述第四子导电层与所述第二信号线电连接;所述薄膜电阻设置在所述第三子导电层和所述第四子导电层之间的间隙中,且所述薄膜电阻一端与所述第三子导电层连接,另一端与所述第四子导电层连接。
- 根据权利要求1-3任一项所述的激光器载体,其特征在于,所述激光器芯片通过第一导线与所述第二导电层电连接。
- 根据权利要求1-4任一项所述的激光器载体,其特征在于,所述激光器芯片通过焊料与所述第一导电层焊接连接。
- 根据权利要求1-5任一项所述的激光器载体,其特征在于,所述第一导电层通过第二导线与所述第一信号线连接,所述第二导电层通过第三导线与所述第二信号线连接。
- 根据权利要求1-6任一项所述的激光器载体,其特征在于,所述第一信号线和所述第二信号线设置在电路板上。
- 根据权利要求1-7任一项所述的激光器载体,其特征在于,所述薄膜电阻通过电镀的方式成型在所述激光器载体上。
- 一种激光器载体的制作方法,其特征在于,所述方法包括:在激光器载体的第一表面上成型第一导电层、第二导电层和薄膜电阻,所述第一导电层和所述第二导电层间隔设置;其中,所述激光器载体用于承载激光器芯片,所述薄膜电阻通过所述第一导电层或所述第二导电层与所述激光器芯片电连接。
- 根据权利要求9所述的激光器载体的制作方法,其特征在于,所述第一导电层包括间隔设置的第一子导电层和第二子导电层,所述在激光器载体的第一表面上成型第一导电层、第二导电层和薄膜电阻,包括:在所述激光器载体的第一表面上成型所述薄膜电阻;在所述激光器载体的第一表面上成型所述第一子导电层、所述第二子导电层和所述第二导电层,使得所述薄膜电阻一端与所述第一子导电层连接,另一端与所述第二 子导电层连接。
- 根据权利要求9所述的激光器载体的制作方法,其特征在于,所述第二导电层包括间隔设置的第三子导电层和第四子导电层,所述在激光器载体的第一表面上成型第一导电层、第二导电层和薄膜电阻,包括:在所述激光器载体的第一表面上成型所述薄膜电阻;在所述激光器载体的第一表面上成型所述第一导电层、所述第三子导电层和所述第四子导电层,使得所述薄膜电阻一端与所述第三子导电层连接,另一端与所述第四子导电层连接。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4937660A (en) * | 1988-12-21 | 1990-06-26 | At&T Bell Laboratories | Silicon-based mounting structure for semiconductor optical devices |
US6567439B1 (en) * | 1998-05-26 | 2003-05-20 | Infineon Technologies Ag | Radio-frequency laser module and a method for producing it |
CN101071808A (zh) * | 2006-04-19 | 2007-11-14 | 日本光进株式会社 | 半导体元件安装基板和光发送模块 |
CN201904535U (zh) * | 2010-12-28 | 2011-07-20 | 厦门三优光机电科技开发有限公司 | 一种用于10g激光器to封装的新型陶瓷片 |
CN106229809A (zh) * | 2016-09-20 | 2016-12-14 | 大连艾科科技开发有限公司 | 用于半导体激光器的芯片载体 |
CN106549299A (zh) * | 2016-10-24 | 2017-03-29 | 中国科学院半导体研究所 | 一种用于直接调制激光器芯片的子载体封装结构 |
CN206432554U (zh) * | 2016-12-29 | 2017-08-22 | 东莞光智通讯科技有限公司 | 用于激光器的陶瓷垫片及激光器 |
CN209266840U (zh) * | 2018-11-07 | 2019-08-16 | 深圳市聚飞光电股份有限公司 | 一种激光器载体及激光器 |
CN112202046A (zh) * | 2020-08-28 | 2021-01-08 | 武汉联特科技有限公司 | 一种新型to封装结构 |
-
2021
- 2021-01-25 CN CN202110097958.7A patent/CN114792928A/zh active Pending
- 2021-12-27 WO PCT/CN2021/141687 patent/WO2022156489A1/zh active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4937660A (en) * | 1988-12-21 | 1990-06-26 | At&T Bell Laboratories | Silicon-based mounting structure for semiconductor optical devices |
US6567439B1 (en) * | 1998-05-26 | 2003-05-20 | Infineon Technologies Ag | Radio-frequency laser module and a method for producing it |
CN101071808A (zh) * | 2006-04-19 | 2007-11-14 | 日本光进株式会社 | 半导体元件安装基板和光发送模块 |
CN201904535U (zh) * | 2010-12-28 | 2011-07-20 | 厦门三优光机电科技开发有限公司 | 一种用于10g激光器to封装的新型陶瓷片 |
CN106229809A (zh) * | 2016-09-20 | 2016-12-14 | 大连艾科科技开发有限公司 | 用于半导体激光器的芯片载体 |
CN106549299A (zh) * | 2016-10-24 | 2017-03-29 | 中国科学院半导体研究所 | 一种用于直接调制激光器芯片的子载体封装结构 |
CN206432554U (zh) * | 2016-12-29 | 2017-08-22 | 东莞光智通讯科技有限公司 | 用于激光器的陶瓷垫片及激光器 |
CN209266840U (zh) * | 2018-11-07 | 2019-08-16 | 深圳市聚飞光电股份有限公司 | 一种激光器载体及激光器 |
CN112202046A (zh) * | 2020-08-28 | 2021-01-08 | 武汉联特科技有限公司 | 一种新型to封装结构 |
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