WO2022153657A1 - 反射型フォトマスクブランク及び反射型フォトマスク - Google Patents

反射型フォトマスクブランク及び反射型フォトマスク Download PDF

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WO2022153657A1
WO2022153657A1 PCT/JP2021/041787 JP2021041787W WO2022153657A1 WO 2022153657 A1 WO2022153657 A1 WO 2022153657A1 JP 2021041787 W JP2021041787 W JP 2021041787W WO 2022153657 A1 WO2022153657 A1 WO 2022153657A1
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Prior art keywords
layer
reflective
reflective photomask
absorption
absorption layer
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PCT/JP2021/041787
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English (en)
French (fr)
Japanese (ja)
Inventor
秀亮 中野
歩美 合田
顯二郎 市川
悠斗 山形
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株式会社トッパンフォトマスク
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Application filed by 株式会社トッパンフォトマスク filed Critical 株式会社トッパンフォトマスク
Priority to US18/271,556 priority Critical patent/US20240077796A1/en
Priority to CN202180089908.2A priority patent/CN116724141A/zh
Priority to EP21919548.4A priority patent/EP4279990A1/en
Priority to KR1020237023288A priority patent/KR20230128018A/ko
Publication of WO2022153657A1 publication Critical patent/WO2022153657A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Definitions

  • the present invention relates to a reflective photomask used in lithography using light in the ultraviolet region as a light source and a reflective photomask blank for producing the same.
  • the exposure light source has replaced the conventional ArF excimer laser light having a wavelength of 193 nm with light in the EUV (Extreme Ultra Violet) region having a wavelength of 13.5 nm.
  • Patent Document 1 Since light in the EUV region is absorbed at a high rate by most substances, a reflective photomask is used as a photomask for EUV exposure (for example, see Patent Document 1).
  • a reflective layer made of a multilayer reflective film in which molybdenum (Mo) layers and silicon (Si) layers are alternately laminated is formed on a glass substrate, and tantalum (Ta) is used as a main component on the reflective layer.
  • An EUV photomask obtained by forming a light absorbing layer and forming a mask pattern on the light absorbing layer is disclosed.
  • the optical system member of the exposure machine is not a lens but a reflection type (mirror). For this reason, there is a problem that the incident light and the reflected light on the reflective photomask (EUV mask) cannot be designed coaxially.
  • EUV mask reflective photomask
  • the optical axis is tilted 6 degrees from the vertical direction of the EUV photomask and incident.
  • a method of guiding the reflected light reflected at an angle of -6 degrees to the semiconductor substrate is adopted.
  • a film mainly composed of tantalum (Ta) having a layer thickness of 60 to 90 nm is used as a light absorption layer.
  • Ta tantalum
  • the contrast may decrease at the edge portion that is the shadow of the mask pattern, depending on the relationship between the incident direction of EUV light and the direction of the mask pattern. May cause.
  • problems such as an increase in line edge roughness of the transfer pattern on the semiconductor substrate and the inability to form the line width to the target size may occur, and the transfer performance may deteriorate.
  • the present invention can suppress or reduce the projection effect of a reflective photomask for patterning transfer using light having a wavelength in the extreme ultraviolet region as a light source, and has sufficient thermal resistance during exposure, a reflective photomask blank and a reflective photo.
  • the purpose is to provide a mask.
  • the reflective photomask blank is a reflective photomask blank for producing a reflective photomask for pattern transfer using extreme ultraviolet rays as a light source. It has a substrate, a reflective layer including a multilayer film formed on the substrate, and an absorbent layer formed on the reflective layer, and the absorbent layer is a total of indium (In) and nitrogen (N). It contains 50 atomic% or more, the atomic number ratio (N / In) of nitrogen (N) to indium (In) in the absorption layer is 0.5 or more and 1.5 or less, and the layer thickness of the absorption layer is 17 nm or more. It is characterized by having a thickness of 45 nm or less.
  • the absorbent layer is tantalum (Ta), platinum (Pt), tellurium (Te), zirconium (Zr), hafnium (Hf), titanium (Ti), tungsten (W), silicon (Si), chromium (Cr). , Gallium (Ga), Molybdenum (Mo), Tin (Sn), Platinum (Pd), Nickel (Ni), Boron (B), Fluorine (F), Oxygen (O), Carbon (C) and Hydrogen (H) It may further contain one or more elements selected from the group consisting of.
  • the reflective photomask is a reflective photomask for pattern transfer using extreme ultraviolet rays as a light source, and includes a substrate, a reflective layer containing a multilayer film formed on the substrate, and a reflective layer. It has an absorption pattern layer formed on the reflection layer, and the absorption pattern layer contains 50 atomic% or more of indium (In) and nitrogen (N) in total, and the indium (In) in the absorption pattern layer.
  • the atomic number ratio (N / In) of nitrogen (N) to water is 0.5 or more and 1.5 or less, and the layer thickness of the absorption pattern layer is 17 nm or more and 45 nm or less.
  • the absorption pattern layer includes tantalum (Ta), platinum (Pt), tellurium (Te), zirconium (Zr), hafnium (Hf), titanium (Ti), tungsten (W), silicon (Si), and chromium (Cr). ), Gallium (Ga), Molybdenum (Mo), Tin (Sn), Platinum (Pd), Nickel (Ni), Boron (B), Fluorine (F), Oxygen (O), Carbon (C) and Hydrogen (H) ) May further contain one or more elements selected from the group.
  • a reflective photomask having improved transfer performance to a semiconductor substrate and heat resistance during exposure can be expected in patterning using light having a wavelength in the extreme ultraviolet region as a light source. That is, the reflective photomask blank and the reflective photomask according to one aspect of the present invention suppress or reduce the projection effect of the reflective photomask for patterning transfer using light having a wavelength in the extreme ultraviolet region as a light source. Moreover, it has sufficient resistance to EUV light irradiation.
  • FIG. 1 is a schematic cross-sectional view showing the structure of the reflective photomask blank 10 according to the embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view showing the structure of the reflective photomask 20 according to the embodiment of the present invention.
  • the reflective photomask 20 according to the embodiment of the present invention shown in FIG. 2 is formed by patterning the absorption layer 4 of the reflective photomask blank 10 according to the embodiment of the present invention shown in FIG. be.
  • the reflective photomask blank 10 includes a substrate 1, a reflective layer 2 formed on the substrate 1, and a capping layer 3 formed on the reflective layer 2. And an absorption layer 4 formed on the capping layer 3.
  • substrate for the substrate 1 according to the embodiment of the present invention, for example, a flat Si substrate, a synthetic quartz substrate, or the like can be used. Further, although low thermal expansion glass to which titanium is added can be used for the substrate 1, the present invention is not limited to these as long as it is a material having a small coefficient of thermal expansion.
  • the reflective layer 2 may be any one that reflects EUV light (extreme ultraviolet light) as exposure light, and is a multilayer reflective film made of a combination of materials having a significantly different refractive index with respect to EUV light. May be good.
  • the reflective layer 2 including the multilayer reflective film is formed by repeatedly laminating layers of a combination of Mo (molybdenum) and Si (silicon) or Mo (molybdenum) and Be (beryllium) for about 40 cycles, for example. You may.
  • the capping layer 3 is formed of a material having resistance to dry etching performed when forming a transfer pattern (mask pattern) on the absorption layer 4, and etches the absorption layer 4. At that time, it functions as an etching stopper to prevent damage to the reflective layer 2.
  • the capping layer 3 is made of, for example, Ru (ruthenium).
  • the capping layer 3 may not be formed depending on the material of the reflective layer 2 and the etching conditions.
  • a back surface conductive film can be formed on the surface of the substrate 1 on which the reflective layer 2 is not formed.
  • the back surface conductive film is a film for fixing the reflective photomask 20 by using the principle of an electrostatic chuck when it is installed in an exposure machine.
  • the absorption pattern (absorption pattern layer) 41 of the reflection type photomask 20 Is formed.
  • EUV lithography EUV light is obliquely incident and reflected by the reflection layer 2, but the transfer performance on the wafer (semiconductor substrate) may deteriorate due to the projection effect that the absorption pattern layer 41 obstructs the optical path. be. This deterioration in transfer performance is reduced by reducing the thickness of the absorption layer 4 that absorbs EUV light.
  • FIG. 3 is a graph showing the optical constants of EUV light of each metal material with respect to a wavelength of 13.5 nm.
  • the horizontal axis of FIG. 3 represents the refractive index n, and the vertical axis represents the extinction coefficient k.
  • the extinction coefficient k of tantalum (Ta), which is the main material of the conventional absorption layer 4, is 0.041. If the compound material has an extinction coefficient k larger than that, the thickness of the absorption layer 4 can be reduced as compared with the conventional one. When the extinction coefficient k is 0.06 or more, the thickness of the absorption layer 4 can be made sufficiently thin, and the projection effect can be reduced.
  • nk value for example, silver (Ag), platinum (Pt), indium (In), cobalt (Co), tin (Sn), as shown in FIG.
  • Ni nickel
  • Te tellurium
  • these metal materials have a problem that the volatility of the elemental halide is low and the dry etching property is poor. Therefore, even if a reflective photomask blank having an absorbent layer formed of these metal materials is produced, the absorbent layer pattern cannot be patterned on the absorbent layer, and as a result, the reflective photomask blank is made reflective. There is a problem that the photomask cannot be processed. Alternatively, since the melting points of these metal materials are low, they cannot withstand the heat during the production of the reflective photomask or during EUV exposure, resulting in a problem that the reflective photomask is not practical.
  • the reflective photomask blank and the absorbent layer of the reflective photomask of the present invention have InN, which is an indium nitride.
  • the melting point is around 157 ° C., which is lower than the heat temperature at the time of producing a reflective photomask or EUV exposure, and there is a problem in thermal stability.
  • the melting point of the oxide InO film is sufficiently high at 800 ° C. or higher, but it can be increased to 1100 ° C. or higher by using nitride.
  • the InN film has sufficient resistance to heat during the production of a reflective photomask and during EUV exposure.
  • the InN film is chemically stable, it can be dry-etched using a chlorine-based gas, so that the reflective photomask blank can be processed into a reflective photomask.
  • InCl3 which is a compound of In and chlorine (Cl)
  • the volatility of InCl3 is higher than that of the highly absorbent material other than In shown in FIG.
  • the material containing indium (In) and nitrogen (N) for forming the absorption layer 4 has an atomic number ratio (N / In) of nitrogen (N) to indium (In) of 0.5 or more and 1.5 or less. It is preferable to have.
  • the atomic number ratio of indium (In) and nitrogen (N) in the material constituting the absorption layer 4 is 0.5 or more, sufficient heat resistance can be imparted. Since it was confirmed that a film in which the atomic number ratio of nitrogen (N) to indium (In) exceeded 1.5 could not be formed, this was set as the upper limit.
  • the atomic number ratio (N / In) is stoichiometrically stable when it is 1.0, it is more preferably in the range of 0.7 or more and 1.2 or less, and 0.8 or more and 1.0. The following range is more preferable.
  • the material constituting the absorption layer 4 preferably contains indium (In) and nitrogen (N) in a total amount of 50 atomic% or more. This is because if the absorption layer 4 contains components other than indium (In) and nitrogen (N), both EUV light absorption and heat resistance may decrease, but indium (In) and nitrogen (In) and nitrogen ( This is because if the components other than N) are less than 50 atomic%, the EUV light absorption and heat resistance are slightly deteriorated, and the performance of the EUV mask as the absorption layer 4 is hardly deteriorated.
  • Materials other than indium (In) and nitrogen (N) include, for example, Ta, Pt, Te, Zr, Hf, Ti, W, Si, Cr, Ga, Mo, Sn, Pd, Ni, B, F, O, C and H may be mixed. That is, in the absorption layer 4, in addition to indium (In) and nitrogen (N), Ta, Pt, Te, Zr, Hf, Ti, W, Si, Cr, Ga, Mo, Sn, Pd, Ni, B, F , O, C, and H may further contain one or more elements selected from the group.
  • the absorption layer 4 by mixing Ta, Pt, Te, Sn, Pd, and Ni in the absorption layer 4, it is possible to impart conductivity to the film (absorption layer 4) while ensuring high absorption to EUV light. Become. Therefore, it is possible to improve the inspectability in the mask pattern inspection using DUV (Deep Ultra Violet) light having a wavelength of 190 to 260 nm.
  • DUV Deep Ultra Violet
  • Ga, Hf, Zr, Mo, Cr, and F when Ga, Hf, Zr, Mo, Cr, and F are mixed in the absorption layer 4, the film quality can be made more amorphous. Therefore, it is possible to improve the roughness and in-plane dimensional uniformity of the absorption layer pattern (mask pattern) after dry etching, or the in-plane uniformity of the transferred image.
  • Ti, W, and Si when Ti, W, and Si are mixed in the absorption layer 4, it is possible to increase the resistance to cleaning.
  • the content of one or more elements selected from the group is 5 atomic% or more and 35 atomic% or less with respect to the total number of atoms constituting the absorption layer 4 or the total number of atoms constituting the absorption pattern layer 41.
  • the range is more preferable, and the range of 10 atomic% or more and 30 atomic% or less is further preferable.
  • the absorption layer 4 according to the embodiment of the present invention is not limited to this.
  • the absorption layer 4 according to the embodiment of the present invention may be, for example, one or more absorption layers, that is, a multi-layer absorption layer.
  • a compound material containing Ta as a main component has been applied to the absorption layer 4 of the conventional EUV reflective photomask.
  • the thickness of the absorption layer 4 needs to be 40 nm or more, and the OD.
  • the thickness of the absorption layer 4 required to be 70 nm or more in order to obtain 2 or more.
  • the extinction coefficient k of Ta is 0.041, but by applying a compound material containing indium (In) and nitrogen (N) having an extinction coefficient k of 0.06 or more to the absorption layer 4, according to Beer's law.
  • the film thickness of the absorption layer 4 according to the embodiment of the present invention is preferably 17 nm or more and 45 nm or less. That is, when the film thickness of the absorption layer 4 is within the range of 17 nm or more and 45 nm or less, the projection effect can be sufficiently reduced as compared with the conventional absorption layer 4 formed of a compound material containing Ta as a main component. It can be done and the transfer performance is improved.
  • the optical density (OD: Optical Density) value is the contrast between the absorption layer 4 and the reflection layer 2. If the OD value is less than 1, sufficient contrast cannot be obtained and the transfer performance deteriorates. Tend. Further, the above-mentioned "main component” means a component containing 50 atomic% or more with respect to the total number of atoms in the absorption layer.
  • Example 1 First, a method for producing the reflective photomask blank 10 will be described with reference to FIG.
  • a synthetic quartz substrate 11 having a low thermal expansion characteristic was prepared.
  • a reflective layer 12 formed by laminating 40 laminated films of a pair of silicon (Si) and molybdenum (Mo) was formed on the prepared substrate 11.
  • the thickness of the reflective layer 12 was set to 280 nm.
  • a capping layer 13 was formed as an intermediate film on the formed reflective layer 12. Ruthenium (Ru) was used as the material for the capping layer 13.
  • the layer thickness of the capping layer 13 was 3.5 nm.
  • an absorption layer 14 containing a total of 100 atomic% of indium (In) and nitrogen (N) was formed on the capping layer 13.
  • XPS X-ray photoelectron spectroscopy
  • XRD X-ray diffractometer
  • the crystallinity of the absorption layer 14 was amorphous, although the crystallinity was slightly observed.
  • the layer thickness of the absorption layer 14 was 33 nm.
  • a back surface conductive film 15 was formed of chromium nitride (CrN) on the surface of the substrate 11 opposite to the surface on which the reflective layer 12 was formed.
  • the layer thickness of the back surface conductive film 15 was 100 nm.
  • the reflective photomask blank 100 of Example 1 was produced by the above procedure.
  • the film formation (formation of each layer) of each film (reflection layer 12, capping layer 13, absorption layer 14) on the substrate 11 was performed using a multi-dimensional sputtering apparatus.
  • the layer thickness of each film was controlled by the sputtering time.
  • the absorption layer 14 was formed so that the N / In ratio was 1.0 by controlling the amount of oxygen introduced into the chamber during sputtering by the reactive sputtering method.
  • a method of manufacturing the reflective photomask 200 will be described with reference to FIGS. 5 to 8.
  • a positive chemical amplification resist SEBP9012: manufactured by Shin-Etsu Chemical Co., Ltd.
  • SEBP9012 manufactured by Shin-Etsu Chemical Co., Ltd.
  • the layer thickness of the positive chemically amplified resist was 120 nm.
  • the applied positive chemically amplified resist was baked at 110 ° C. for 10 minutes to form a resist film 16.
  • a predetermined pattern was drawn on the resist film 16 using an electron beam drawing machine (JBX3030: manufactured by JEOL Ltd.).
  • developing was performed using a spray developing machine (SFG3000: manufactured by Sigma Meltec).
  • a resist pattern 16a was formed as shown in FIG.
  • the resist pattern 16a was used as an etching mask, and the mask pattern was patterned on the absorption layer 14 by dry etching mainly using a chlorine-based gas. As a result, as shown in FIG. 7, an absorption pattern (absorption pattern layer) 141 was formed on the absorption layer 14. Subsequently, the resist pattern 16a was peeled off to prepare the reflective photomask 200 of Example 1 as shown in FIG.
  • the absorption pattern layer 141 formed on the absorption layer 14 is for measuring the thickness of the absorption layer using a line width 64 nm LS (line and space) pattern and AFM on a reflective photomask 200 for transfer evaluation.
  • a line width 64 nm LS (line and space) pattern and AFM on a reflective photomask 200 for transfer evaluation Includes an LS pattern with a line width of 200 nm and a 4 mm square absorption layer removing portion for measuring EUV reflectance.
  • the line width 64 nm LS pattern is designed in each of the x direction and the y direction as shown in FIG. 9 so that the influence of the projection effect by EUV irradiation can be easily seen.
  • the layer thickness of the absorption layer 14 was measured by a transmission electron microscope. Further, the measurement was carried out in the same manner in Examples 2 to 5 and Comparative Examples 1 to 7 below.
  • Example 2 In Example 2, as the absorption layer 14, the atomic number ratio (N / In) of indium (In) and nitrogen (N) is 1.0, and the total content of indium (In) and nitrogen (N) is 1. A layer was formed in which 70 atomic% of the entire absorption layer 14 and the remaining 30 atomic% were Ga. Further, the layer thickness of the absorption layer 14 was set to 33 nm. Other than that, the reflective photomask blank 100 and the reflective photomask 200 of Example 2 were produced in the same manner as in Example 1.
  • Example 3 In Example 3, as the absorption layer 14, the atomic number ratio (N / In) of indium (In) and nitrogen (N) is 1.0, and the total content of indium (In) and nitrogen (N) is 1. A layer was formed in which 70 atomic% of the entire absorption layer 14 and the remaining 30 atomic% were Ta. Further, the layer thickness of the absorption layer 14 was set to 33 nm. Other than that, the reflective photomask blank 100 and the reflective photomask 200 of Example 3 were produced in the same manner as in Example 1.
  • Example 4 In Example 4, as the absorption layer 14, the atomic number ratio (N / In) of indium (In) and nitrogen (N) is 0.5, and the total content of indium (In) and nitrogen (N) is A layer to be 100 atomic% of the entire absorption layer 14 was formed. Further, the layer thickness of the absorption layer 14 was set to 33 nm. Other than that, the reflective photomask blank 100 and the reflective photomask 200 of Example 4 were produced in the same manner as in Example 1.
  • Example 5 the absorption layer 14 has an atomic number ratio (N / In) of indium (In) and nitrogen (N) of 1.5, and the total content of indium (In) and nitrogen (N) is 1.5.
  • a layer to be 100 atomic% of the entire absorption layer 14 was formed. Further, the layer thickness of the absorption layer 14 was set to 33 nm.
  • the reflective photomask blank 100 and the reflective photomask 200 of Example 5 were produced in the same manner as in Example 1.
  • Comparative Example 1 In Comparative Example 1, as the absorption layer 14, the atomic number ratio (N / In) of indium (In) and nitrogen (N) is 0, and the content of indium (In) is 100 atomic% of the entire absorption layer 14. Layer was formed. Further, the layer thickness of the absorption layer 14 was set to 33 nm. Other than that, the reflective photomask blank 100 and the reflective photomask 200 of Comparative Example 1 were produced in the same manner as in Example 1.
  • Comparative Example 2 In Comparative Example 2, as the absorption layer 14, the atomic number ratio (N / In) of indium (In) and nitrogen (N) is 1.0, and the total content of indium (In) and nitrogen (N) is 1. A layer to be 100 atomic% of the entire absorption layer 14 was formed. Further, the layer thickness of the absorption layer 14 was set to 50 nm. Other than that, the reflective photomask blank 100 and the reflective photomask 200 of Comparative Example 2 were produced in the same manner as in Example 1.
  • the absorption layer 14 has an atomic number ratio (N / In) of indium (In) and nitrogen (N) of 1.0, and the total content of indium (In) and nitrogen (N) is 1.0.
  • a layer was formed in which 30 atomic% of the entire absorption layer 14 and the remaining 70 atomic% were Te.
  • the layer thickness of the absorption layer 14 was set to 26 nm.
  • the reflective photomask blank 100 and the reflective photomask 200 of Comparative Example 3 were produced in the same manner as in Example 1.
  • Comparative Example 4 In Comparative Example 4, as the absorption layer 14, the atomic number ratio (N / In) of indium (In) and nitrogen (N) is 1.0, and the total content of indium (In) and nitrogen (N) is 1. A layer was formed in which 45 atomic% of the entire absorption layer 14 and the remaining 55 atomic% were Te. The layer thickness of the absorption layer 14 was set to 26 nm. Other than that, the reflective photomask blank 100 and the reflective photomask 200 of Comparative Example 4 were produced in the same manner as in Example 1.
  • Comparative Example 5 In Comparative Example 4, as the absorption layer 14, the atomic number ratio (N / In) of indium (In) and nitrogen (N) is 0.4, and the total content of indium (In) and nitrogen (N) is A layer to be 100 atomic% of the entire absorption layer 14 was formed. Further, the layer thickness of the absorption layer 14 was set to 33 nm. Other than that, the reflective photomask blank 100 and the reflective photomask 200 of Comparative Example 5 were produced in the same manner as in Example 1.
  • Comparative Example 6 In Comparative Example 6, as the absorption layer 14, the atomic number ratio (N / In) of indium (In) and nitrogen (N) is 1.0, and the total content of indium (In) and nitrogen (N) is 1. A layer to be 100 atomic% of the entire absorption layer 14 was formed. Further, the layer thickness of the absorption layer 14 was set to 15 nm. Other than that, the reflective photomask blank 100 and the reflective photomask 200 of Comparative Example 6 were produced in the same manner as in Example 1.
  • Comparative Example 7 In Comparative Example 7, as the absorption layer 14, the atomic number ratio (N / In) of indium (In) and nitrogen (N) is 1.0, and the total content of indium (In) and nitrogen (N) is 1. A layer to be 100 atomic% of the entire absorption layer 14 was formed. Further, the layer thickness of the absorption layer 14 was set to 47 nm. Other than that, the reflective photomask blank 100 and the reflective photomask 200 of Comparative Example 7 were produced in the same manner as in Example 1.
  • a conventional tantalum (Ta) -based absorption layer-based reflective photomask blank and a reflective photomask (hereinafter, also referred to as "existing Ta-based mask”).
  • a molybdenum (Mo) layer and a silicon (Si) layer are repeatedly laminated on a synthetic quartz substrate having low thermal expansion characteristics, as in Examples 1 to 5 and Comparative Examples 1 to 7. It has a reflective layer (repeated number of 40), a capping layer 13 made of ruthenium (Ru) having a layer thickness of 3.5 nm, and an absorbing layer 14.
  • the absorption layer 14 was formed by forming a film of TaO having a layer thickness of 2 nm on TaN having a layer thickness of 58 nm. Further, in the reflective photomask (existing Ta-based mask), a mask pattern was patterned on the absorption layer 14 of the reflective photomask in the same manner as in Examples 1 to 5 and Comparative Examples 1 to 7.
  • the HV bias value is the line width difference of the transfer pattern depending on the orientation of the mask pattern, that is, the difference between the line width in the horizontal (Horizontal: H) direction and the line width in the vertical (Vertical: V) direction.
  • the line width in the H direction indicates the line width of a linear pattern orthogonal to the surface formed by the incident light and the reflected light (hereinafter, may be referred to as an “incident surface”), and the line width in the V direction is the incident surface.
  • the line width of the parallel linear pattern is shown. That is, the line width in the H direction is the length in the direction parallel to the incident surface, and the line width in the V direction is the length in the direction orthogonal to the incident surface.
  • Table 1 is a table showing the HV bias and heat resistance of Examples 1 to 5, Comparative Examples 1 to 7, and the existing Ta mask.
  • Table 1 shows a comparison of HV biases of each Example and each Comparative Example.
  • the pattern size in the y direction was 20 nm and the HV bias value was 8.65 nm.
  • the HV bias of the reflective photomask 200 of Example 1 is 5.13 nm
  • the HV bias of the reflective photomask 200 of Example 2 is 4.17 nm
  • the HV bias of the reflective photomask 200 of Example 3 is 4.17 nm.
  • the HV bias was 4.61 nm
  • the HV bias of the reflective photomask 200 of Example 4 was 5.13 nm
  • the HV bias of the reflective photomask 200 of Example 5 was 5.13 nm.
  • the HV bias of the reflective photomask 200 of Comparative Example 3 is 5.01 nm
  • the HV bias of the reflective photomask 200 of Comparative Example 4 is 5.25 nm
  • the HV bias of the reflective photomask 200 of Comparative Example 5 is 5. Was 5.13 nm. Therefore, it was confirmed that the projection effect can be suppressed or reduced as compared with the existing Ta mask.
  • the transfer pattern of the reflective photomask 200 of Comparative Example 6 had a large roughness due to insufficient contrast, and the transfer patterns of the reflective photomask 200 of Comparative Example 1, Comparative Example 2 and Comparative Example 7 were not resolved.
  • the HV bias could not be evaluated.
  • Table 1 shows a comparison of heat resistance of each Example and each Comparative Example.
  • Table 1 when the existing Ta-based mask was used, the film loss and the change in reflectance Ra were hardly confirmed.
  • Comparative Example 2 Comparative Example 2
  • Comparative Example 3 Comparative Example 2
  • Comparative Example 6 Comparative Example 7
  • Table 1 shows a comparison of heat resistance of each Example and each Comparative Example.
  • the mask has a heat resistance higher than that of the existing Ta mask.
  • the reflective photomask 200 of Example 5 was marked with “ ⁇ ” because the film loss and the change in reflectance Ra could not be confirmed.
  • the reflective photomasks 200 of Comparative Examples 1 and 3 to 5 were used, film loss and changes in reflectance Ra were confirmed. Therefore, "x” is marked in the "heat resistance” column of "Comparative Example 1", “Comparative Example 3", “Comparative Example 4", and "Comparative Example 5".
  • Table 1 shows a comprehensive evaluation of HV bias and heat resistance.
  • Table 1 when the HV bias value is lower than the HV bias value (8.65) of the existing Ta mask and the heat resistance column is " ⁇ " or “ ⁇ ”, the "judgment” column is “judgment”. ⁇ ”was marked. Further, when the HV bias value is larger than the HV bias value (8.65) of the existing mask, or when the heat resistance column is "x”, "x" is marked in the "judgment” column. Therefore, in Table 1, “ ⁇ ” is marked in the “judgment” column of “Example 1”, “Example 2”, “Example 3”, “Example 4”, and “Example 5”.
  • the absorption pattern layer 141 contains 50 atomic% or more of indium (In) and nitrogen (N) in total, and the atomic number ratio (N / In) of nitrogen (N) to indium (In) in the absorption pattern layer 141. ) Is 0.5 or more and 1.5 or less, and the reflective photomask 200 having a layer thickness of 17 nm or more and 45 nm or less of the absorption pattern layer 141 has good optical density OD value and heat resistance, and projection. The result was that the effect could be reduced, the life was long, and the transfer performance was improved. That is, it was confirmed that the reflective photomask 200 having more excellent transfer performance can be obtained.
  • the reflective photomask blank 100 by using the reflective photomask blank 100 according to the above embodiment, the projection effect of the reflective photomask for patterning transfer using light having a wavelength in the extreme ultraviolet region as a light source can be suppressed or reduced, and at the time of exposure. It can be said that it was confirmed that the reflective photomask 200 having sufficient heat resistance could be produced.
  • the reflective photomask blank and the reflective photomask according to the present invention can be suitably used for forming a fine pattern by EUV exposure in a manufacturing process of a semiconductor integrated circuit or the like.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2021/041787 2021-01-12 2021-11-12 反射型フォトマスクブランク及び反射型フォトマスク WO2022153657A1 (ja)

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US18/271,556 US20240077796A1 (en) 2021-01-12 2021-11-12 Reflective photomask blank and reflective photomask
CN202180089908.2A CN116724141A (zh) 2021-01-12 2021-11-12 反射型光掩模坯和反射型光掩模
EP21919548.4A EP4279990A1 (en) 2021-01-12 2021-11-12 Reflective photomask blank and reflective photomask
KR1020237023288A KR20230128018A (ko) 2021-01-12 2021-11-12 반사형 포토마스크 블랭크 및 반사형 포토마스크

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190900A (ja) * 2005-01-07 2006-07-20 Toppan Printing Co Ltd 反射型フォトマスクブランク、反射型フォトマスク、及びこれを用いた半導体装置の製造方法
WO2017038213A1 (ja) * 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法

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Publication number Priority date Publication date Assignee Title
JP5418293B2 (ja) 2010-02-25 2014-02-19 凸版印刷株式会社 反射型フォトマスクおよび反射型フォトマスクブランクならびにその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190900A (ja) * 2005-01-07 2006-07-20 Toppan Printing Co Ltd 反射型フォトマスクブランク、反射型フォトマスク、及びこれを用いた半導体装置の製造方法
WO2017038213A1 (ja) * 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法

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