WO2022145255A1 - シリカ熱反射板 - Google Patents

シリカ熱反射板 Download PDF

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Publication number
WO2022145255A1
WO2022145255A1 PCT/JP2021/046703 JP2021046703W WO2022145255A1 WO 2022145255 A1 WO2022145255 A1 WO 2022145255A1 JP 2021046703 W JP2021046703 W JP 2021046703W WO 2022145255 A1 WO2022145255 A1 WO 2022145255A1
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Prior art keywords
silica
plate
reflector
film
silica plate
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PCT/JP2021/046703
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English (en)
French (fr)
Japanese (ja)
Inventor
智弘 丸子
好裕 石黒
尊信 松村
裕也 大川
Original Assignee
株式会社フルヤ金属
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Priority claimed from JP2021098989A external-priority patent/JP7096409B1/ja
Application filed by 株式会社フルヤ金属 filed Critical 株式会社フルヤ金属
Priority to KR1020237012567A priority Critical patent/KR20230069174A/ko
Priority to CN202180077002.9A priority patent/CN116457920A/zh
Priority to TW110148379A priority patent/TW202225625A/zh
Publication of WO2022145255A1 publication Critical patent/WO2022145255A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Definitions

  • the present disclosure can be used, for example, in the field of semiconductors and electronic components as a heat reflector of various heat treatment devices that heat-treat wafers, substrates, etc. at high temperatures, and since it has high reflectance, it is possible to save energy in the heat treatment devices. Also, it relates to a silica heat reflector capable of suppressing contamination.
  • a heat insulating body there is a heat insulating body having a quartz plate that closes the opening of the heat treatment chamber, is laminated apart from each other, and is exposed to the heat treatment chamber.
  • a gold thin film is formed inside the quartz plate, and the gold thin film is characterized by being formed by gold vapor deposition (see, for example, Patent Document 1).
  • a quartz plate having a hole for passing a quartz tube in the center and a hole for passing a quartz rod, an organic substance is added to a mixture of platinum (Pt) and an oxide (SiO, PbO, etc.) to form a paste.
  • Pt platinum
  • SiO, PbO, etc. oxide
  • the heat shield plate is formed of a reflective film and a transparent quartz layer covering the surface of the reflective film.
  • a pair of circular transparent quartz plates for forming a transparent quartz layer are used, a reflective film is provided on one side of one of the transparent quartz plates, and the reflective film is used.
  • Patent Document 1 a gold thin film is used as a reflective film, but the melting point of gold is 1064 ° C., and there is a problem that it melts, the film is turned up or shrunk during heat treatment at 1500 ° C. or higher. There was a problem with heat resistance in practice.
  • a heater conduction portion is provided in the center with a quartz tube for use as a reflector and a heater, but there are some locations where the radiant heat cannot be completely shielded due to this structure. In order to save more energy, it is necessary to take a large reflection area ratio, make the reflector thinner, and reduce the heat capacity.
  • Patent Document 3 a method of sandwiching between quartz plates and welding is adopted, but since it is affected by heat, there is a problem that the film is peeled off when it is carried out with a thin film. Furthermore, it is difficult to keep the inside in a vacuum, and the risk of damaging the thin film due to an increase in internal pressure during high-temperature use is unavoidable. Further, even in the method of casting transparent quartz, thermal and physical damage cannot be avoided when it is applied to a metal thin film.
  • the present disclosure can secure a larger reflection area ratio than the conventional method, has a small heat capacity, can save energy, has a high reflectance, suppresses contamination in the furnace, and has a long life of silica heat reflection.
  • the purpose is to provide a board.
  • the present inventors have solved the above-mentioned problems by arranging a reflector having a surface layer containing Ir, Pt, Rh, Ru, Re, Hf or Mo as a reflecting surface inside the silica plate. It was found that the present invention was completed. That is, the silica heat-reflecting plate according to the present invention is arranged inside the silica plate and the outer periphery is completely covered by the silica plate, and is incident on one surface of the silica plate.
  • a silica thermal reflector having a reflector that reflects the infrared rays, wherein the reflector is a thin film, a plate, or a foil, and the surface layer including at least the reflecting surface of the reflector is Ir, Pt, Rh. , Ru, Re, Hf or Mo, or an alloy comprising at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo.
  • the silica plate is a laminated plate in which a first silica plate and a second silica plate are arranged facing each other and peripheral portions are continuously joined in an annular shape along the peripheral edge. It is preferable to have the structure of. Since the silica plate and the reflector can be made thin, the heat capacity can be reduced.
  • the structure of the laminated plate is provided between the facing surfaces of the first silica plate and the second silica plate, and is provided on the first silica plate side and the first silica plate. 2 It is preferable that at least one of the silica plates has a cavity sealed by a joint portion between the peripheral portions, and the reflector is arranged in the cavity. Since the reflector is in a cavity which is a closed space, stress in the peeling direction due to the reflector is less likely to be applied to the joint between the peripheral edges, and contamination in the furnace due to breakage of the reflector can be suppressed. Further, damage due to the difference in thermal expansion between the silica plate and the reflector can be avoided.
  • the silica heat reflecting plate according to the present invention has the cavity at least on the first silica plate side, and has a thin film formed as the reflector on the surface of the first silica plate in the cavity, and the thin film.
  • a laminated film having a base film and a reflective film as a surface layer including the reflective surface in this order from the surface side in the cavity of the first silica plate, and the base film is Ta, Mo, It consists of Ti, Zr, Nb, Cr, W, Co or Ni, or an alloy containing at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni.
  • the reflective film is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. It is preferable that the base film and the reflective film have different compositions. Since the reflector is formed on the surface inside the cavity of the first silica plate, stress in the peeling direction due to the reflector is less likely to be applied to the joint between the peripheral edges, and the inside of the furnace is contaminated due to damage to the reflector. Can be suppressed. Further, damage due to the difference in thermal expansion between the silica plate and the reflector can be avoided.
  • the first silica plate is a flat plate
  • the cavity is provided on the side of the second silica plate
  • a thin film formed as the reflector on the surface of the first silica plate is formed.
  • the thin film is a laminated film having a base film and a reflective film as a surface layer including the reflective surface in order from the surface side of the first silica plate
  • the base film is Ta, Mo. , Ti, Zr, Nb, Cr, W, Co or Ni, or an alloy containing at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni.
  • the reflective film is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. Therefore, it is preferable that the base film and the reflective film have different compositions. Since a thin film as a reflector is formed on the first silica plate which is a flat plate, a silica heat reflector having excellent productivity can be obtained.
  • the reflector is a plate or foil and is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or Ir, Pt, Rh, Ru, It is preferably made of an alloy containing at least one selected from Re, Hf and Mo.
  • a plate or foil as a reflector is housed in the cavity, and corrosion of the plate or foil is unlikely to occur. Further, it is difficult to apply stress in the peeling direction due to the plate or foil to the joints between the peripheral edges.
  • the pressure in the cavity is preferably reduced to less than atmospheric pressure. It is possible to suppress the increase in the internal pressure of the cavity during the heat treatment, and it is possible to further suppress the contamination in the furnace.
  • the first silica plate has a bank portion provided on the peripheral portion and a recess surrounded by the bank portion to form the cavity.
  • the silica plate has a flat plate shape, or (2) the first silica plate has a flat plate shape, and the second silica plate is surrounded by a bank portion provided on the peripheral portion and the bank portion. It is preferable to have a recess constituting the cavity.
  • the silica heat reflector has at least one support column portion that stands between the facing surfaces of the structure of the laminated plate in the cavity.
  • the joint strength of the laminated plate structure can be increased by the support column portion.
  • the silica heat reflector according to the present invention includes a form in which the support column portion is columnar or tubular. By making it columnar or tubular, it is possible to increase the area of the reflector while increasing the bonding strength.
  • the silica heat reflecting plate has a plurality of the strut portions, the strut portions are tubular, and each strut portion shares a part of the tubular wall with each other. It is preferable to have a dimensional space filling structure. By adopting a three-dimensional space filling structure, it is possible to increase the area of the reflector while increasing the joint strength, and further increase the strength of the reflector itself.
  • the three-dimensional space-filling structure includes a form of a honeycomb structure, a rectangular lattice structure, a square lattice structure, or a diamond lattice structure.
  • the facing surfaces of the first silica plate and the second silica plate are flat surfaces
  • the reflector is the first silica plate on the second silica plate side.
  • It is a thin film formed in the inner region of the annular joint portion between the peripheral portions of the surface of the above, and the thin film is a surface including the base film and the reflective surface in order from the surface side of the first silica plate.
  • the silica heat reflecting plate according to the present invention has the cavity at least on the first silica plate side, and has a thin film formed as the reflector on the surface of the first silica plate in the cavity, and the thin film.
  • a Mo film or an alloy film containing 50% by mass or more of Mo is used, the thin film formed as a reflector may be a single-layer film.
  • the first silica plate is a flat plate
  • the cavity is provided on the side of the second silica plate
  • a thin film formed as the reflector on the surface of the first silica plate is formed.
  • the thin film preferably has a Mo film or an alloy film containing 50% by mass or more of Mo.
  • the thin film formed as a reflector may be a single-layer film.
  • the facing surfaces of the first silica plate and the second silica plate are flat surfaces, and the reflector is the first silica plate on the second silica plate side.
  • the thin film is preferably a Mo film or an alloy film containing 50% by mass or more of Mo.
  • the thin film formed as a reflector may be a single-layer film.
  • the thin film having the cavity on the first silica plate side and the second silica plate side and formed as the reflector on the surface of the first silica plate in the cavity.
  • the thin film is preferably a Mo film or an alloy film containing 50% by mass or more of Mo.
  • the thin film formed as a reflector may be a single-layer film.
  • the thickness of the reflector is preferably 0.01 ⁇ m or more and 5 mm or less.
  • the heat capacity of the silica heat reflector can be reduced while maintaining the reflection efficiency of radiant heat by the reflector.
  • the joint portion between the peripheral portions is a surface activated joint portion.
  • the thin film, which is a reflector is less susceptible to thermal and physical damage due to the bonding process.
  • the joint strength at the joint is increased, the silica heat reflector has a longer life, corrosion resistance is increased, and contamination in the furnace is suppressed.
  • a silica heat reflector can be provided.
  • FIG. 1 It is a schematic diagram which shows the 8th example of the AA cross section. It is a schematic diagram which shows the 9th example of the AA cross section. It is a schematic diagram which shows the tenth example of the AA cross section. It is a schematic diagram which shows the eleventh example of the AA cross section. It is a schematic diagram which shows the twelfth example of the AA cross section. It is a schematic diagram which shows the thirteenth example of the AA cross section. It is a graph which shows the reflectance of the reflector of Example 1. FIG. It is a graph which shows the relationship between the wavelength of blackbody radiation emitted by a substance at 1000 degreeC, and the amount of radiation. It is a graph which shows the reflectance of the reflector of Example 5. It is a graph which shows the reflectance of the reflector of Example 6. It is a schematic diagram which shows the 14th example of the AA cross section.
  • the silica heat reflector according to the present embodiment will be described with reference to FIGS. 1 and 2.
  • the silica heat reflecting plate 100 according to the present embodiment is arranged inside the silica plate 1 and the silica plate 1 so that the outer periphery is completely covered by the silica plate 1 and is on one surface of the silica plate 1. It has a reflector 5 that reflects incident infrared rays. In FIG. 1, the direction toward the paper surface is the incident direction of infrared rays. In FIG. 2, the direction from top to bottom is the incident direction of infrared rays.
  • the reflector 5 is a thin film, and the surface layer including at least the reflective surface of the reflector 5 is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or Ir, Pt, Rh, Ru, Re, It consists of an alloy containing at least one selected from Hf and Mo.
  • FIG. 2 shows a form in which the reflector 5 is a laminated film, and a reflective film 4 as a surface layer including a reflective surface is formed on the base film 3. At this time, it is preferable that the entire surface of the reflector 5 surrounded by the peripheral edge of the reflector is a reflecting surface without providing through holes or irregularities.
  • the silica plate 1 is a laminated plate in which the first silica plate 1a and the second silica plate 1b are arranged facing each other and the peripheral edges are continuously joined in an annular shape along the peripheral edge. It is preferable to have a structure.
  • the first silica plate 1a and the second silica plate 1b form a laminated plate structure by a joint portion 2 between peripheral portions. As shown in FIG. 1, the joint portion 2 between the peripheral portions is continuous in an annular shape along the peripheral edge of the silica plate 1.
  • the joint portion 2 between the peripheral portions can be seen as a boundary portion between the first silica plate 1a and the second silica plate 1b by seeing through the second silica plate 1b, and is shown as a gray area.
  • the silica plate can be made thin, so that the heat capacity can be reduced.
  • the shape of the silica plate 1 with the reflector 5 viewed from the front is, for example, a circle, an ellipse, a rectangle, or a square, and a circle is preferable. Further, it is preferable that the outer plate surface of the silica plate 1 with the reflector 5 viewed from the front is a flat surface without providing through holes or irregularities.
  • the circular diameter is, for example, 5 to 50 cm.
  • the width of the annular shape of the joint portion 2 between the peripheral portions is, for example, 0.5 to 20 mm.
  • the wall thickness of the silica plate 1 is preferably 0.1 to 20 mm, more preferably 0.2 to 10 mm.
  • the wall thickness of the first silica plate 1a is preferably 0.05 to 10 mm, more preferably 0.5 to 1.5 mm.
  • the wall thickness of the second silica plate 1b is preferably 0.05 to 10 mm, more preferably 0.5 to 1.5 mm.
  • the silica plate 1 includes a form of a crystalline silica plate or an amorphous silica plate.
  • the impurity concentration of the silica plate 1 is 100 ppm or less, preferably 90 ppm or less.
  • the structure of the laminated plate is provided between the facing surfaces of the first silica plate 1a and the second silica plate 1b, and the first silica plate 1a side and the second silica plate 1b side. It is preferable that at least one of the cavities 12 is sealed by a joint portion 2 between peripheral portions, and the reflector 5 is arranged in the cavity 12.
  • the cavity 12 has a form provided on the first silica plate 1a side, a form provided on both sides of the first silica plate 1a side and the second silica plate 1b side, and a form provided on the second silica plate 1b side. ..
  • FIG. 2 shows a form in which the cavity 12 is provided on the side of the first silica plate 1a.
  • a recess is provided on one surface of the first silica plate 1a
  • the second silica plate 1b is a flat plate having no recess
  • the structure of the laminated plate of the first silica plate 1a and the second silica plate 1b is provided on the side of the first silica plate 1a.
  • the cavity 12 is provided only on the first silica plate 1a side of the facing surfaces of the first silica plate 1a and the second silica plate 1b, and is sealed by the joint portion 2 between the peripheral portions.
  • the reflector 5 Since the reflector 5 is located in the cavity 12 which is a closed space, it is difficult to apply stress in the peeling direction due to the reflector to the joint between the peripheral edges, and it is possible to suppress contamination in the furnace due to damage to the reflector. can. Further, damage due to the difference in thermal expansion between the silica plate and the reflector can be avoided.
  • FIG. 3 shows a form in which the cavity 12 is provided on both sides of the first silica plate 1a side and the second silica plate 1b side.
  • a recess is provided on one surface of the first silica plate 1a
  • a recess is provided on one surface of the second silica plate 1b so that the recesses fit together.
  • the structure of the laminated plate of the second silica plate 1b is provided on both the first silica plate 1a side and the second silica plate 1b side of the facing surfaces of the first silica plate 1a and the second silica plate 1b.
  • FIG. 4 shows a form in which the cavity 12 is provided on the second silica plate 1b side.
  • the first silica plate 1a is a flat plate having no recess, and the recess is provided on one surface of the second silica plate 1b, and the structure of the laminated plate of the first silica plate 1a and the second silica plate 1b is provided. Therefore, the cavity 12 is provided on the second silica plate 1b side. As a result, the cavity 12 is provided only on the second silica plate 1b side of the facing surfaces of the first silica plate 1a and the second silica plate 1b.
  • the height of the cavity 12 (length in the vertical direction in FIG. 2) is preferably 0.1 ⁇ m to 5 mm, more preferably 0.1 ⁇ m to 1 mm.
  • the cavity 12 has a recess provided only on the first silica plate 1a side, a recess provided on both the first silica plate 1a side and the second silica plate 1b side, and a recess provided only on the second silica plate 1b side.
  • the recesses form a bank portion 11 on the peripheral edge of the first silica plate 1a and / or on the peripheral edge of the second silica plate 1b. In the form of FIG.
  • the top surface of the bank portion 11 formed on the first silica plate 1a is joined to the flat plate portion of the second silica plate 1b arranged to face each other, and the joint portion 2 between the peripheral portions is formed. Will be done.
  • the top surfaces of the bank portions 11 of the first silica plate 1a and the second silica plate 1b are joined to each other, and the joining portion 2 between the peripheral portions is formed.
  • the top surface of the bank portion 11 formed on the second silica plate 1b is joined to the flat plate portion of the first silica plate 1a arranged to face each other, and the joint portion 2 between the peripheral portions is joined. Is formed.
  • the recess can be formed by, for example, an etching method.
  • the first silica plate 1a has a bank portion 11 provided on the peripheral portion and a recess surrounded by the bank portion 11 to form a cavity 12.
  • the second silica plate 1b preferably has a flat plate shape. By providing the recess only in the first silica plate 1a, the cavity 12 can be provided in the silica plate with a simple structure.
  • silica heat reflectors having such a form include silica heat reflectors 103, 106, 109, 112 exemplified in FIGS. 5, 8, 12, or 15.
  • the first silica plate 1a has a flat plate shape
  • the second silica plate 1b has a bank portion 11 and a bank portion provided on the peripheral portion. It is preferable to have a recess surrounded by 11 and constituting the cavity 12. By providing the recess only in the second silica plate 1b, the cavity 12 can be provided in the silica plate with a simple structure.
  • the silica heat reflector having such a form in addition to FIG. 4, there are silica heat reflectors 105, 108, 111 exemplified in FIG. 7, FIG. 11 or FIG.
  • the cavity 12 is provided at least on the first silica plate 1a side, and is on the surface of the first silica plate 1a in the cavity 12.
  • the thin film has a thin film formed as a reflector 5, and the thin film has a base film 3 and a reflective film 4 as a surface layer including a reflective surface in this order from the surface side in the cavity 12 of the first silica plate 1a. It is a laminated film, and the base film 3 is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni.
  • the reflective film 4 is made of an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf or Mo, or Ir, Pt, Rh, Ru, Re, Hf and It is preferably made of an alloy containing at least one selected from Mo, and the base film 3 and the reflective film 4 have different compositions. Since the reflector is formed on the surface inside the cavity of the first silica plate, stress in the peeling direction due to the reflector is less likely to be applied to the joint between the peripheral edges, and the inside of the furnace is contaminated due to damage to the reflector. Can be suppressed. Further, damage due to the difference in thermal expansion between the silica plate and the reflector can be avoided.
  • the undercoat 3 is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni. It is preferably made of an alloy containing one or more. Such a metal or alloy has a high melting point and is excellent in adhesion to a silica plate.
  • the undercoat film 3 is preferably a thin film obtained by, for example, a sputtering film, a coating film, CVD, vapor deposition, or the like.
  • the alloy containing at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni it is preferable that the alloy contains any one of these elements in the largest mass.
  • an alloy containing 50% by mass or more of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni still more preferably an alloy containing 60% by mass or more, and most preferably 70% by mass or more. It is an alloy, for example, a Ta-Mo-based alloy, a Ta-Cr-based alloy, or a Cr-Co-based alloy.
  • the film thickness of the base film 3 is preferably 5 to 500 nm, more preferably 10 to 100 nm. The base film 3 improves the adhesion of the reflective film 4.
  • the reflective film 4 is deposited on the surface of the base film 3.
  • the reflective film 4 is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. Is preferable. Such metals or alloys have a high melting point and high infrared reflectance. In addition, the reactivity with the base film is low.
  • the reflective film 4 is preferably a thin film obtained by, for example, a sputtering film, a coating film, CVD, vapor deposition, or the like.
  • the alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo it is preferable that the alloy contains any one of these elements in the largest mass, and more preferably.
  • the film thickness of the reflective film 4 is preferably 5 to 1000 nm, more preferably 10 to 300 nm.
  • the base film 3 / reflective film 4 is a Ta film / Ir film, a Mo film / Ir film, or the like.
  • the film thickness of the laminated film is preferably 10 to 1500 nm, more preferably 20 to 400 nm.
  • the thickness of the reflector 5 may be equal to the height of the cavity 12, that is, the reflective film 4 may be in contact with the surface of the second silica plate 1b.
  • the interference fringes generated by the partial contact between the reflective film 4 and the second silica plate are reduced.
  • the base film 3 is preferably deposited on the surface (bottom surface of the recess) in the cavity 12 of the first silica plate 1a, and the reflective film 4 is preferably deposited on the surface of the base film 3. It is preferable that the reflective film 4 is in contact with the surface of the second silica plate 1b, but is not formed on the surface of the second silica plate 1b, that is, it is not deposited.
  • the first silica plate 1a is a flat plate
  • the cavity 12 is provided on the second silica plate 1b side
  • the cavity 12 is on the surface of the first silica plate 1a.
  • the thin film has a thin film formed as a reflector 5, and the thin film is a laminated film having a base film 3 and a reflective film 4 as a surface layer including a reflective surface in this order from the surface side of the first silica plate 1a.
  • the undercoat 3 is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or at least selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni.
  • the reflective film 4 is made of an alloy containing any one of them, and the reflective film 4 is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or is selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. It is preferably made of an alloy containing at least one of them.
  • the form shown in FIG. 4 is different from the form shown in FIG. 2 or 3 in that the first silica plate 1a is a flat plate and the cavity 12 is on the second silica plate 1b side, but the other aspects are the same. .. Since a thin film as a reflector is formed on the first silica plate 1a which is a flat plate, a silica heat reflector having excellent productivity can be obtained.
  • the thickness of the reflector 5 may be equal to the height of the cavity 12, that is, the reflective film 4 may be in contact with the surface of the second silica plate 1b (bottom surface of the recess). .. The interference fringes generated by the partial contact between the reflective film 4 and the second silica plate are reduced.
  • the base film 3 is preferably deposited on the surface of the first silica plate 1a, and the reflective film 4 is preferably deposited on the surface of the base film 3.
  • the form shown in FIG. 7 is different from the form shown in FIG. 5 or 6 in that the first silica plate 1a is a flat plate and the cavity 12 is on the second silica plate 1b side, but the other aspects are the same. .. Since a thin film as a reflector is formed on the first silica plate 1a which is a flat plate, a silica heat reflector having excellent productivity can be obtained.
  • the silica heat reflectors 106 to 111 have at least one silica heat reflector plate 106 to 111 standing between facing surfaces of the laminated plate structure in the cavity 12. It is preferable to have the support column 6.
  • the strut portion 6 can increase the joint strength of the structure of the laminated plate. As shown in FIG. 8 or 12, for example, the support column 6 extends from the bottom surface of the recess of the first silica plate 1a, and the top surface of the support column 6 is joined to the surface of the flat plate-shaped second silica plate 1b. There are various forms.
  • the bank portion 11 is formed by forming the recess by etching only the first silica plate 1a. , It can be formed by making the support column 6 a non-etched part in the same way as making the bank part 11 a non-etched part. Further, the support column 6 extends from the bottom surface of the recess of the first silica plate 1a and extends from the bottom surface of the recess of the second silica plate 1b, as shown in FIG. 10 or 13, for example, and extends from the bottom surface of the recess of the second silica plate 1b. There is a form in which the faces are joined together.
  • the first silica plate 1a and the second silica plate 1b are etched.
  • the bank portion 11 is formed by forming the concave portion, and at this time, it can be formed by making the strut portion 6 a non-etched portion in the same manner as the bank portion 11 being a non-etched portion. Further, as the support column 6, for example, as shown in FIG. 11 or FIG.
  • the support column 6 extends from the bottom surface of the recess of the second silica plate 1b, and the top surface of the support column 6 is joined to the surface of the flat plate-shaped first silica plate 1a.
  • the bank portion 11 is formed by forming the recess by etching only the second silica plate 1b, and at this time, the support column is formed. It can be formed by making the portion 6 a non-etched portion.
  • the joint portion between the strut portion 6 and the first silica plate 1a or the second silica plate 1b, or the joint portion between the strut portions 6 is shown by the joint portion 7.
  • the reflector 5 is the same as the silica heat reflectors 100 to 105 shown in FIGS. 2 to 7. At this time, the reflector 5 formed on the outside of the support 6 is not provided with through holes or irregularities, and the inner circumference of the reflector on the outside of the support 6 and the entire surface surrounded by the peripheral edge of the reflector are covered. It is preferably a reflective surface.
  • the silica heat reflectors 106 to 111 include a form in which the support column 6 is columnar or tubular.
  • the shape of the cross section of the main shaft of the support column 6 is preferably a circle, an ellipse, or a polygon having a triangle or more. For polygons of triangle or more, it is preferably a square or a regular hexagon.
  • the silica heat reflector has a plurality of support columns 6, the support columns 6 are tubular, and each support column 6 shares a part of the cylinder wall with each other in three dimensions. It is preferable to have a space filling structure.
  • the three-dimensional space-filling structure includes a form such as a honeycomb structure, a rectangular lattice structure, a square lattice structure, or a diamond lattice structure.
  • FIG. 9 illustrates a silica heat reflector 100 having a strut portion having a honeycomb structure.
  • the honeycomb structure is a structure in which hexagonal cylinders are arranged without gaps, preferably a structure in which regular hexagonal cylinders are arranged without gaps.
  • the rectangular lattice structure is a structure in which square cylinders having a rectangular cross section are arranged without gaps.
  • the cubic lattice structure is a structure in which square cylinders with a square cross section are arranged without gaps.
  • the rhombic lattice structure is a structure in which square cylinders with a rhombic cross section are arranged without gaps.
  • the tubular shape of the support column 6 is not provided with through holes or irregularities in the formed reflector 5. It is preferable that the entire surface surrounded by the peripheral edge of the reflector inside the reflector is a reflecting surface.
  • the facing surfaces of the first silica plate 1a and the second silica plate 1b are flat surfaces
  • the reflector 5 is a second silica plate. It is a thin film formed in the inner region of the annular junction 2 between the peripheral edges of the surface of the first silica plate 1a on the 1b side, and the thin films are sequentially formed with the base film from the surface side of the first silica plate 1a.
  • a laminated film having a reflective film as a surface layer including a reflective surface, and the underlying film is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or Ta, Mo.
  • the reflective film is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or , Ir, Pt, Rh, Ru, Re, Hf and Mo, and preferably an alloy containing at least one of them, and the undercoat film and the reflective film have different compositions.
  • the form in which the reflector 5 is a laminated film is not shown.
  • the base film is preferably deposited on the surface of the first silica plate, and the reflective film is preferably deposited on the surface of the base film.
  • the reflective film is in contact with the surface of the second silica plate, but is not formed on the surface of the second silica plate, that is, is not deposited.
  • a silica heat reflector having excellent productivity can be obtained.
  • the reflector can be brought into close contact with the second silica plate, and interference fringes can be further suppressed.
  • the film thickness of the laminated film is preferably 10 to 500 nm. By reducing the thickness of the laminated film, even if the cavity 12 is not provided, it is possible to provide an annular joint between the peripheral edges due to stress deformation of the first silica plate and the second silica plate, and the laminated film can be formed.
  • the inside of the silica plate makes it possible to completely cover the outer circumference.
  • the reason for selecting the metal or alloy of the reflector 5 is the same as that of the silica heat reflectors 100 to 105 shown in FIGS. 2 to 7.
  • the silica heat reflecting plate according to the present embodiment has a cavity at least on the first silica plate side, and has a thin film formed as a reflector on the surface of the cavity of the first silica plate, and the thin film is a Mo film or a Mo film or a thin film. It is preferable that the alloy film contains 50% by mass or more of Mo. When the Mo film or the alloy film containing 50% by mass or more of Mo is used, the thin film formed as a reflector may be a single-layer film.
  • the silica heat reflector according to the present embodiment has a structure in which the reflector 5 which is a laminated film is replaced with a Mo film or an alloy film containing 50% by mass or more of Mo in FIGS. 2, 5, 8 or 12. .. Further, as in the silica plate 1 of FIGS. 3, 6, 10 or 13, the cavity 12 may be provided on both sides of the first silica plate 1a side and the second silica plate 1b side. .. In this embodiment, a recess is provided on one surface of the first silica plate 1a, and a recess is provided on one surface of the second silica plate 1b so that the recesses fit together. And the structure of the laminated plate of the second silica plate 1b.
  • the cavities 12 are provided on both the first silica plate 1a side and the second silica plate 1b side of the facing surfaces of the first silica plate 1a and the second silica plate 1b.
  • the direction of incident infrared rays of the silica heat reflector according to the present embodiment may be either a direction from top to bottom or a direction from bottom to top.
  • the first silica plate is a flat plate
  • the cavity is on the second silica plate side
  • the thin film formed as a reflector on the surface of the first silica plate is formed.
  • the thin film formed as a reflector may be a single-layer film.
  • the silica heat reflector according to the present embodiment has a structure in which the reflector 5 which is a laminated film is replaced with a Mo film or an alloy film containing 50% by mass or more of Mo in FIGS. 4, 7, 11 or 14. ..
  • the direction of incident infrared rays of the silica heat reflector according to the present embodiment may be either a direction from top to bottom or a direction from bottom to top.
  • the facing surfaces of the first silica plate and the second silica plate are flat surfaces, and the reflector is the surface of the first silica plate on the second silica plate side. It is a thin film formed in the inner region of the annular junction between the peripheral portions, and the thin film is preferably a Mo film or an alloy film containing 50% by mass or more of Mo. When the Mo film or the alloy film containing 50% by mass or more of Mo is used, the thin film formed as a reflector may be a single-layer film. In FIG.
  • the silica heat reflector according to the present embodiment has a structure in which the reflector 5 is replaced with a Mo film or an alloy film containing 50% by mass or more of Mo.
  • the direction of incident infrared rays of the silica heat reflector according to the present embodiment may be either a direction from top to bottom or a direction from bottom to top.
  • the silica heat reflecting plate according to the present embodiment has a cavity on the first silica plate side and the second silica plate side, and has a thin film formed as a reflector on the surface inside the cavity of the first silica plate, and is a thin film.
  • the thin film formed as a reflector may be a single-layer film.
  • the silica heat reflector according to the present embodiment has a structure in which the reflector 5 which is a laminated film is replaced with a Mo film or an alloy film containing 50% by mass or more of Mo in FIGS. 3, 6, 10 or 13. ..
  • the direction of incident infrared rays of the silica heat reflector according to the present embodiment may be either a direction from top to bottom or a direction from bottom to top.
  • the Mo content of the alloy film containing Mo is preferably 50% by mass or more, more preferably 60% by mass or more, and further preferably 70% by mass or more. ..
  • the Mo film or the alloy film containing 50% by mass or more of Mo is preferably formed with the same film thickness as the reflector 5 which is a laminated film, and the area ratio of the thin film formed on the bottom surface of the recess is the laminated film. It is preferable that the film is formed in the same range as the reflector 5.
  • the joint portion 2 between the peripheral portions is a surface activated joint portion.
  • the joint portion 7 including the support portion 6 is preferably a surface-activated joint portion. Since it is possible to join at a relatively low temperature, it is possible to join without thermal or physical damage to the reflective film, and by joining while keeping the inside vacuum, the joining strength at the joint is increased.
  • the silica heat reflector has a longer life, has higher corrosion resistance, and suppresses contamination in the furnace.
  • the surface-activated joint portion refers to a portion where at least one of the parts to be joined is brought into a surface-activated state, and then the joint parts are combined by applying pressure to integrate and join the surface structures at the atomic level. ..
  • the surface-activated joint portion includes a room temperature-activated joint portion and a plasma-activated joint portion.
  • the room temperature activated joints include, for example, a joint that is surface-activated using a high-speed atomic beam and bonded, a joint that forms a nano-adhesive layer using an active metal such as Si and is surface-activated and bonded, and ions. There are joints that are surface activated and joined using a beam.
  • the plasma-activated junction includes, for example, a junction that is surface-activated and bonded using oxygen plasma, and a junction that is surface-activated and bonded using nitrogen plasma.
  • the pressure in the cavity 12 is preferably reduced to less than atmospheric pressure.
  • the pressure in the cavity 12 is more preferably 10-2 Pa or less. It is possible to suppress the increase in the internal pressure of the cavity 12 during the heat treatment, and it is possible to further suppress the contamination in the furnace. In addition, deterioration of the reflective film at high temperatures can be suppressed.
  • the reflector 8 is a plate and is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or Ir. It is preferably made of an alloy containing at least one selected from Pt, Rh, Ru, Re, Hf and Mo. As the alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo, it is preferable that the alloy contains any one of these elements in the largest mass, and more preferably.
  • An alloy containing 50% by mass or more of Ir, Pt, Rh, Ru, Re, Hf or Mo more preferably an alloy containing 60% by mass or more, and most preferably an alloy containing 70% by mass or more, for example, Ir-. It is a Pt-based alloy, an Ir-Rh-based alloy, or a Pt-Ru-based alloy.
  • a plate as a reflector is housed in the cavity 12, and corrosion of the plate is unlikely to occur. Further, it is difficult to apply stress in the peeling direction due to the plate to the joint portion between the peripheral portions.
  • the reflector 8 which is a plate is preferably formed in an area of 50 to 100% with respect to the total area of the bottom surface of the recess, and more preferably formed in an area of 80 to 100%.
  • the reflector is a foil and is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or Ir, Pt, Rh, Ru, Re, Hf. And preferably an alloy containing at least one selected from Mo (not shown).
  • the alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo it is preferable that the alloy contains any one of these elements in the largest mass, and more preferably.
  • An alloy containing 50% by mass or more of Ir, Pt, Rh, Ru, Re, Hf or Mo more preferably an alloy containing 60% by mass or more, and most preferably an alloy containing 70% by mass or more, for example, Ir-. It is a Pt-based alloy, an Ir-Rh-based alloy, or a Pt-Ru-based alloy.
  • the foil instead of the reflector 8 being a plate, the foil is housed in the cavity 12, and corrosion of the foil is unlikely to occur. Further, it is difficult to apply stress in the peeling direction due to the foil to the joints between the peripheral edges.
  • the reflector which is a foil, is preferably formed in an area of 50 to 100% with respect to the total area of the bottom surface of the recess, and more preferably formed in an area of 80 to 100%.
  • the thickness of the reflector is preferably 0.01 ⁇ m to 5 mm, more preferably 0.02 ⁇ m to 2 mm.
  • the heat capacity of the silica heat reflector can be reduced while maintaining high reflection efficiency by the reflector. If the thickness of the reflector is less than 0.01 ⁇ m, it becomes difficult to maintain the reflection efficiency, and if it exceeds 5 mm, the amount of heat of the reflector may become too large.
  • the film thickness of the laminated film is preferably 10 nm or more and 1500 nm or less, and more preferably 20 nm or more and 400 nm or less.
  • the plate thickness is preferably 0.5 mm or more and 5.0 mm or less, and more preferably 0.5 mm or more and 2.0 mm or less.
  • the thickness of the foil is preferably 3 ⁇ m or more and 2.0 mm or less, and more preferably 8 ⁇ m or more and 1.0 mm or less.
  • the value obtained by subtracting the thickness of the reflector from the height of the cavity is 200 ⁇ m or less. It is preferably 100 ⁇ m or less, and more preferably 100 ⁇ m or less. If the gap in the height direction in the cavity exceeds 200 ⁇ m, the deformation of the silica plate due to atmospheric pressure becomes large, and as a result, the stress applied in the vicinity of the joint portion becomes large, and the joint portion may be cracked.
  • the infrared incident direction is from top to bottom.
  • the incident direction of infrared rays may be either a direction from top to bottom or a direction from bottom to top.
  • Example 1 The form in which the reflector is a laminated film
  • the silica heat reflector shown in FIG. 2 is manufactured. First, two silica plates having an outer circumference of 300 mm and a thickness of 1.2 mm were prepared and used as a first silica plate and a second silica plate, respectively. Next, a width of 10 mm from the outer periphery of the first silica plate was left as a joint with the second silica plate, and etching was performed on the other parts to provide a recess for a cavity having a depth of 1 ⁇ m.
  • h Planck's constant (6.626070115 ⁇ 10 ⁇ 34 J ⁇ s)
  • k B Boltzmann constant (1.380649 ⁇ 10-23 J / K)
  • c optical velocity (299792458 m / s)
  • ⁇ wavelength. (Nm).
  • FIG. 17 it is necessary to reflect radiant heat at 1000 ° C., and it can be confirmed that the wavelength is 2000 nm to 2600 nm and the amount of radiation is large. Further, as a result of FIG. 16, it was confirmed that the reflector in this example had a reflectance of 90% or more at a wavelength of 2000 nm or more at 1000 ° C.
  • a high-speed atomic beam was applied to the joint of the first silica plate in a vacuum with a vacuum degree of 10-2 Pa or less.
  • a silica heat-reflecting plate was produced by irradiating and activating the surface and pressing the second silica plate against the first silica plate.
  • Example 2 The form in which the reflector is a laminated film
  • two silica plates having an outer circumference of 300 mm and a thickness of 1.2 mm were prepared and used as a first silica plate and a second silica plate, respectively.
  • a width of 5 mm from the outer periphery of the first silica plate was masked as a joint with the second silica plate.
  • Ta was formed into a film of 50 nm as a base film on the surface of the masked first silica plate by a sputtering method
  • Ir was formed into a film of 150 nm as a reflective film on the surface of the base film by a sputtering method to form a reflector.
  • Example 3 The form in which the reflector is a laminated film
  • two silica plates having an outer circumference of 300 mm and a thickness of 1.2 mm were prepared and used as a first silica plate and a second silica plate, respectively.
  • a width of 5 mm from the outer periphery of the first silica plate was masked as a joint with the second silica plate.
  • Ta was formed into a film of 50 nm as a base film on the surface of the masked first silica plate by a sputtering method
  • Ir was formed into a film of 150 nm as a reflective film on the surface of the base film by a sputtering method to form a reflector.
  • Example 4 The reflector is a laminated film, and there is a honeycomb-shaped strut.
  • the silica heat reflector shown in FIG. 12 is manufactured. First, two silica plates having an outer circumference of 300 mm and a thickness of 1.2 mm were prepared and used as a first silica plate and a second silica plate, respectively. Next, mask the width of 10 mm from the outer circumference of the first silica plate, and then, in other places, a honeycomb with a regular hexagonal width of 10 mm (one side length is 5.77 mm) and a wall pillar thickness of 0.3 mm.
  • etching was performed to provide a recess for a cavity having a depth of 1 ⁇ m.
  • Ta was formed into a film of 50 nm as a base film on the bottom surface of the recess of the masked first silica plate by a sputtering method
  • Ir was formed into a film of 150 nm as a reflective film on the base film by a sputtering method to form a reflector. ..
  • the masking was removed.
  • the reflector of this embodiment has a honeycomb structure with respect to the reflector of Example 1.
  • the reflectance shown in FIG. 16 shows the value of the form in which the entire surface is a reflective film.
  • the area ratio of the reflective film portion to the entire surface is 94.34. Therefore, it is considered that the reflectance characteristic of this example has a reflectance obtained by multiplying the reflectance shown in FIG. 16 by 0.9434.
  • a high-speed atomic beam is applied to the joining portion 2 of the first silica plate in a vacuum having a vacuum degree of 10-2 Pa or less.
  • the support column was irradiated to activate the surface, and the second silica plate was pressed against the first silica plate to join them to prepare a silica heat reflecting plate.
  • Example 5 The form in which the reflector is a Pt foil
  • the silica heat reflector shown in FIG. 15 is manufactured. First, two silica plates having an outer circumference of 300 mm and a thickness of 1.2 mm were prepared and used as a first silica plate and a second silica plate, respectively. Next, a width of 7 mm from the outer periphery of the first silica plate was left as a joint with the second silica plate, and cutting was performed on the other parts to provide a recess for a cavity having a depth of 0.2 mm.
  • a Pt foil having an outer circumference of 284 mm and a thickness of 100 ⁇ m was placed on the bottom surface of the recess of the first silica plate to form a reflector.
  • the reflectance of the reflector was measured using an ultraviolet visible spectrophotometer (model: UV-3100PC manufactured by Shimadzu Corporation). The measured reflectance is shown in FIG. The measurement was performed by shining light for measurement directly on the surface of the reflector. As a result of FIG. 18, it was confirmed that the reflector in this example had a reflectance of 80% or more at a wavelength of 2000 nm or more at 1000 ° C.
  • a high-speed atomic beam is applied to the joint of the first silica plate in a vacuum with a vacuum degree of 10-2 Pa or less.
  • the surface was activated by irradiation, and the second silica plate was pressed against the first silica plate to join them to prepare a silica heat reflecting plate.
  • Example 6 The form in which the reflector is a Mo film
  • two silica plates having an outer circumference of 300 mm and a thickness of 1.2 mm were prepared and used as a first silica plate and a second silica plate, respectively.
  • a width of 5 mm from the outer periphery of the first silica plate was masked as a joint with the second silica plate.
  • Mo was formed into a film of 200 nm as a reflector on the surface of the masked first silica plate by a sputtering method.
  • the masking was removed.
  • the reflectance of the reflector was measured using an ultraviolet visible spectrophotometer (manufactured by Shimadzu Corporation, model: UV-3100PC). The result of the measured reflectance is shown in FIG. The measurement was performed by shining light for measurement directly on the surface of the reflector. Further, as a result of FIG. 19, it was confirmed that the reflector in this example had a reflectance of 80% or more at a wavelength of 2000 nm or more at 1000 ° C.
  • a high-speed atomic beam was applied to the joint of the first silica plate in a vacuum with a vacuum degree of 10-2 Pa or less.
  • a silica heat-reflecting plate was produced by irradiating and activating the surface and pressing the second silica plate against the first silica plate.

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Publication number Priority date Publication date Assignee Title
JPH0778779A (ja) * 1993-09-07 1995-03-20 Fuji Electric Co Ltd 輻射熱防止板およびその使用方法
JPH09148315A (ja) * 1995-11-20 1997-06-06 Tokyo Electron Ltd 熱処理装置及び処理装置
JPH11340157A (ja) * 1998-05-29 1999-12-10 Sony Corp 光照射熱処理装置および光照射熱処理方法
JP2000150396A (ja) * 1998-11-16 2000-05-30 Sakaguchi Dennetsu Kk 熱放射リフレクター
JP2001102319A (ja) * 1999-09-29 2001-04-13 Toshiba Ceramics Co Ltd 熱処理装置
JP2004031846A (ja) * 2002-06-28 2004-01-29 Shin Etsu Handotai Co Ltd 縦型熱処理装置

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JPS6032667B2 (ja) 1980-03-28 1985-07-29 日本原子力研究所 放射線による石炭の液化方法
JPH1197360A (ja) 1997-09-22 1999-04-09 Tokyo Electron Ltd 縦型熱処理装置
JP4172806B2 (ja) 2006-09-06 2008-10-29 三菱重工業株式会社 常温接合方法及び常温接合装置
JP7152711B2 (ja) 2018-06-20 2022-10-13 日本電産マシンツール株式会社 接合基板の製造方法及び接合基板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778779A (ja) * 1993-09-07 1995-03-20 Fuji Electric Co Ltd 輻射熱防止板およびその使用方法
JPH09148315A (ja) * 1995-11-20 1997-06-06 Tokyo Electron Ltd 熱処理装置及び処理装置
JPH11340157A (ja) * 1998-05-29 1999-12-10 Sony Corp 光照射熱処理装置および光照射熱処理方法
JP2000150396A (ja) * 1998-11-16 2000-05-30 Sakaguchi Dennetsu Kk 熱放射リフレクター
JP2001102319A (ja) * 1999-09-29 2001-04-13 Toshiba Ceramics Co Ltd 熱処理装置
JP2004031846A (ja) * 2002-06-28 2004-01-29 Shin Etsu Handotai Co Ltd 縦型熱処理装置

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