WO2022134333A1 - 量子点显示面板及其制备方法、显示装置 - Google Patents

量子点显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2022134333A1
WO2022134333A1 PCT/CN2021/082448 CN2021082448W WO2022134333A1 WO 2022134333 A1 WO2022134333 A1 WO 2022134333A1 CN 2021082448 W CN2021082448 W CN 2021082448W WO 2022134333 A1 WO2022134333 A1 WO 2022134333A1
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Prior art keywords
quantum dot
color filter
dot color
filter unit
red
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PCT/CN2021/082448
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English (en)
French (fr)
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高丹鹏
张志宽
杨丽敏
孙小卫
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深圳扑浪创新科技有限公司
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Priority to JP2022516758A priority Critical patent/JP2023511637A/ja
Priority to US17/619,955 priority patent/US11971166B2/en
Priority to EP21865311.1A priority patent/EP4053623A4/en
Publication of WO2022134333A1 publication Critical patent/WO2022134333A1/zh

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/08—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
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    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
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    • F21Y2115/10—Light-emitting diodes [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/133509—Filters, e.g. light shielding masks
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    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Definitions

  • the present application relates to the field of display technology, for example, to a quantum dot display panel, a preparation method thereof, and a display device.
  • Quantum dot Quantum Dot, QD
  • the particle size of quantum dot (Quantum Dot, QD) materials is generally between 1 and 10 nm. Since electrons and holes are quantum confined, the continuous energy band structure becomes a discrete energy level structure, so the emission spectrum is very narrow (20 nm). -30nm), high chromaticity and wide display color gamut. Due to its special characteristics, quantum dots are gradually emerging as a new generation of luminescent materials in display applications. Quantum dot materials can effectively improve the color gamut of the display screen and meet the needs of high-quality display applications by absorbing blue light in some wavelength bands and exciting green light and red light in some wavelength bands.
  • Quantum dot color film is a key component for display devices to achieve full color display with ultra-high color gamut.
  • the quantum dot color film technology usually mixes red and green quantum dot materials together to form a quantum dot color conversion film. After the blue backlight in the display panel passes through the display module and the quantum dot color conversion film, it needs to be The red and green light and the remaining blue light converted by the quantum dot color conversion film are filtered by the color filter, so that each pixel will filter out the other two colors of light, resulting in a change in the efficiency of the light emitted by the pixel. low, reducing the luminous efficiency of the display panel.
  • red, green quantum dots and red and green quantum dots are directly mixed to prepare a red quantum dot color filter unit, a green quantum dot color filter unit and a composite quantum dot color filter unit, so that the red and green quantum dots are directly mixed to prepare a composite
  • the quantum dot color filter unit will cause the red quantum dots to re-absorb the light emitted by the green quantum dots, reduce the luminous efficiency of the white light of the display panel, and reduce the overall luminous efficiency of the display panel.
  • the present application provides a quantum dot display panel, a preparation method thereof, and a display device, so as to improve the luminous efficiency and display brightness of the quantum dot display panel.
  • a quantum dot display panel comprising:
  • the quantum dot color film structure is located on one side of the light-emitting surface of the backlight module; the quantum dot color film structure at least includes a red quantum dot color film unit, a green quantum dot color film unit and a composite quantum dot color film unit;
  • the red quantum dot color filter unit and the green quantum dot color filter unit are arranged in layers, and the red quantum dot color filter unit is closer to the side of the backlight module than the green quantum dot color filter unit, And the red quantum dot color filter unit, the green quantum dot color filter unit, and the composite quantum dot color filter unit do not overlap each other;
  • the composite quantum dot color filter unit at least includes red quantum dots arranged in layers a dot color film subunit and a green quantum dot color film subunit; the red quantum dot color film subunit is closer to one side of the backlight module than the green quantum dot color film subunit;
  • a first reflective layer disposed on the side of the quantum dot color filter structure away from the backlight module, and the first reflective layer covers the red quantum dot color filter unit and the green quantum dot color filter unit;
  • the second reflection layer is disposed on the side of the backlight module away from the quantum dot color filter structure, and the second reflection layer covers the quantum dot color filter structure.
  • a preparation method of a quantum dot display panel comprising:
  • the quantum dot color filter structure is located on one side of the light-emitting surface of the backlight module;
  • the quantum dot color filter structure at least includes a red quantum dot color filter unit and a green quantum dot color filter unit and a composite quantum dot color filter unit;
  • the red quantum dot color filter unit and the green quantum dot color filter unit are stacked and arranged, and the red quantum dot color filter unit is closer to the backlight than the green quantum dot color filter unit one side of the module, and the red quantum dot color filter unit, the green quantum dot color filter unit and the composite quantum dot color filter unit do not overlap each other;
  • the composite quantum dot color filter unit at least includes The red quantum dot color film subunit and the green quantum dot color film subunit are arranged in layers; the red quantum dot color film subunit is closer to the side of the backlight module than the green quantum dot color film subunit;
  • a first reflection layer is formed on the side of the quantum dot color filter structure away from the backlight module, wherein the first reflection layer covers the red quantum dot color filter unit and the green quantum dot color filter unit;
  • a second reflection layer is formed on the side of the backlight module away from the quantum dot color filter structure, wherein the second reflection layer covers the quantum dot color filter structure.
  • a display device which includes the above-mentioned quantum dot display panel.
  • FIG. 1 is a schematic structural diagram of a quantum dot display panel provided by an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of another quantum dot display panel provided by an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of another quantum dot display panel provided by an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of another quantum dot display panel provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of another quantum dot display panel provided by an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of another quantum dot display panel provided by an embodiment of the present application.
  • FIG. 7 is a schematic top-view structural diagram of a quantum dot display panel provided by an embodiment of the present application.
  • FIG. 8 is a schematic flowchart of a method for fabricating a quantum dot display panel provided by an embodiment of the present application.
  • FIG. 9 is a diagram of a photolithography preparation process of a quantum dot display panel provided by an embodiment of the present application.
  • FIG. 10 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 11 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 12 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 13 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 14 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • 15 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the application.
  • 16 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 17 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 18 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 19 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 20 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 21 is a diagram of another quantum dot display panel lithography fabrication process diagram provided by an embodiment of the present application.
  • FIG. 22 is a schematic diagram of a photolithographic fabrication process of a quantum dot display panel according to an embodiment of the present application.
  • FIG. 1 is a schematic structural diagram of a quantum dot display panel provided by an embodiment of the present application
  • FIG. 2 is a structural schematic diagram of another quantum dot display panel provided by an embodiment of the present application.
  • the quantum dot display panel includes: a backlight module 10; a quantum dot color film structure 20, located on one side of the light-emitting surface of the backlight module 10; the quantum dot color film structure 20 at least includes red quantum dots Color filter unit 21, green quantum dot color filter unit 22 and composite quantum dot color filter unit 24; One side of the group 10, and the red quantum dot color filter unit 21, the green quantum dot color filter unit 22 and the composite quantum dot color filter unit 24 do not overlap each other; wherein, the composite quantum dot color filter unit 24 at least includes a laminated layer
  • the red quantum dot color film subunit 241 and the green quantum dot color film subunit 242 are arranged; the red quantum dot color film subunit 241 is close to the side of the backlight module 10 ;
  • the backlight module 10 includes a plurality of backlight sources arranged in an array, such as a light emitting diode (Light Emitting Diode, LED) backlight source, a Micro-LED light source, a Mini-LED matrix light source and an organic light emitting diode (Organic Light-Emitting Diode, OLED) light source.
  • the backlight module 10 may be an ultraviolet backlight module or a blue light backlight module.
  • the ultraviolet light backlight module emits ultraviolet light with an emission peak wavelength of 230-395 nm; the blue light backlight module can emit blue light with an emission peak wavelength of 420-480 nm.
  • FIG. 1 and FIG. 2 illustrate the case where the backlight module 10 is an ultraviolet backlight module.
  • the quantum dot color filter structure 20 includes a red quantum dot color filter unit 21, a green quantum dot color filter unit 22, a blue quantum dot color filter unit 23, a composite quantum dot color filter unit 24, a red quantum dot color filter unit 21, and a green quantum dot color filter unit 21.
  • the dot color filter unit 22 and the blue quantum dot color filter unit 23 are stacked and arranged, the red quantum dot color filter unit 21 is close to the side of the backlight module 10, and the red quantum dot color filter unit 21 and the green quantum dot color filter unit 22 , the blue quantum dot color filter unit 23 and the composite quantum dot color filter unit 24 do not overlap each other.
  • the ultraviolet backlight module emits ultraviolet light to excite the non-overlapping red quantum dot color filter unit 21 , green quantum dot color filter unit 22 , and blue quantum dot color filter unit.
  • 23 and the composite quantum dot color filter unit 24 emit red light, green light, blue light and white light correspondingly to realize full-color display of the display panel; each quantum dot color filter unit emits light independently, which also improves the luminous efficiency of the display panel;
  • the composite quantum dot color filter unit 24 also improves the display brightness of the display panel.
  • the red quantum dot color filter unit 21, the green quantum dot color filter unit 22 and the blue quantum dot color filter unit 23, which are stacked on the side close to the ultraviolet backlight module, can reduce the number of long-wavelength quantum dot color filter units (red quantum dot color filter units).
  • the point color filter unit 21) reabsorbs the light emitted by the short wavelength quantum dot color filter unit (green and blue quantum dot color filter units), which improves the overall luminous efficiency of the display panel.
  • FIG. 3 is a schematic structural diagram of another quantum dot display panel provided by an embodiment of the present application, and FIG. 3 illustrates a situation in which the backlight module 10 adopts an ultraviolet light backlight module.
  • the composite quantum dot color film unit 24 includes a red quantum dot color film subunit 241, a green quantum dot color film subunit 242 and a blue quantum dot color film subunit 243 arranged in layers; The film subunit 241 is close to the side of the backlight module 10 .
  • the composite quantum dot color filter unit 24 and the red quantum dot color filter unit 21 are disposed on the same layer.
  • FIG. 1 the composite quantum dot color filter unit 24 and the red quantum dot color filter unit 21 are disposed on the same layer.
  • FIG. 1 the composite quantum dot color filter unit 24 and the red quantum dot color filter unit 21 are disposed on the same layer.
  • FIG. 1 the composite quantum dot color filter unit 24 and the red quantum dot color filter unit 21 are disposed on the same layer.
  • FIG. 1 the
  • the composite quantum dot color filter unit 24 and the green quantum dot color filter unit 22 are disposed on the same layer.
  • the composite quantum dot color filter unit 24 is arranged on the same layer as the green quantum dot color filter unit 22 or the same layer as the red quantum dot color filter unit 21, which can avoid long wavelengths (red, green) in the composite quantum dot color filter unit 24. Reabsorption of the light emitted by the quantum dot color filter unit (the blue quantum dot color filter unit 23 ) by the quantum dot color filter unit.
  • the quantum dot color filter unit the blue quantum dot color filter unit 23
  • the red quantum dot color filter unit 241 and the red quantum dot color filter unit 21 are arranged on the same layer, and the green quantum dot color filter unit 242 and the green quantum dot color filter unit 242 are arranged on the same layer.
  • 22 are arranged on the same layer, and the blue quantum dot color filter sub-unit 243 and the blue quantum dot color filter unit 23 are arranged on the same layer, and the composite quantum dot color filter unit 24 is stacked in this way to avoid long wavelength (red) quantum dot color filter.
  • the subunit reabsorbs the light emitted by the short wavelength (green, blue) quantum dot color film subunit, thus improving the luminous efficiency of the white light emitted by the composite quantum dot color film unit 24 excited by the ultraviolet backlight module, and improving the luminous efficiency of the display panel .
  • red, green and blue quantum dot materials are mixed together to form a quantum dot color filter unit.
  • the ultraviolet light backlight module in the display panel passes through the quantum dot color filter unit, it needs to pass through a color filter.
  • the red, green, and blue light filtered by the quantum dot color filter unit converts the luminous efficiency of the display panel and other problems.
  • a plurality of quantum dot color filter units are arranged in layers, and the ultraviolet light emitted by the ultraviolet light backlight module excites the plurality of quantum dot color filter units to emit red, green, blue, and white light, without the need for filtering by color filters.
  • the luminous efficiency of the display panel is improved; the laminated composite quantum dot color filter unit 24 improves the luminous efficiency of the display panel;
  • the excess ultraviolet light of the color filter unit 22 and the blue quantum dot color filter unit 23 will be reflected by the first reflective layers 30 on both sides of the quantum dot color filter structure 20, so that the red quantum dot color filter unit 21 and the green quantum dot color filter
  • the membrane unit 22, the blue quantum dot color filter unit 23 and the composite quantum dot color filter unit 24 will not cause ultraviolet light to be emitted, which avoids the display of low color purity in each quantum dot color filter unit;
  • the reflection of the second reflection layer 40 can continue to excite a plurality of quantum dot color filter units, which avoids waste of ultraviolet light and improves the luminous efficiency of the display panel.
  • FIG. 4 is a schematic structural diagram of another quantum dot display panel provided by an embodiment of the present application
  • FIG. 5 is a structural schematic diagram of another quantum dot display panel provided by an embodiment of the present application.
  • the backlight module 10 in FIG. 4 and FIG. 5 is shown in FIG. 4 and FIG. 5 .
  • the quantum dot color filter structure 20 includes a red quantum dot color filter unit 21 , a green quantum dot color filter unit 22 and a composite
  • the quantum dot color film unit 24 also includes a blue light-transmitting area 25; the red quantum dot color film unit 21 and the green quantum dot color film unit 22 are stacked and arranged, and the red quantum dot color film unit 21 is close to the side of the backlight module 10, Moreover, the red quantum dot color filter unit 21 , the green quantum dot color filter unit 22 and the composite quantum dot color filter unit 24 do not overlap each other.
  • the blue-light backlight module emits blue light to excite the non-overlapping red quantum dot color filter unit 21 , green quantum dot color filter unit 22 and composite quantum dot color filter unit 24 to emit light correspondingly Red, green and white light, combined with the blue light transmission area 25, emits blue light, realizing full-color display; each quantum dot color filter unit emits light independently, and does not need to be filtered by a color filter, which improves the luminous efficiency of the display panel; due to the increased The composite quantum dot color filter unit 24 also improves the display brightness of the display panel.
  • the red quantum dot color filter unit 21 and the green quantum dot color filter unit 22 are stacked on the side close to the blue light backlight module, which can reduce the amount of light emitted by the red quantum dot color filter unit 21 to the green quantum dot color filter unit 22. absorption, thereby improving the overall luminous efficiency of the display panel.
  • FIG. 6 is a schematic structural diagram of another quantum dot display panel provided by an embodiment of the present application, and FIG. 6 illustrates a situation in which the backlight module 10 adopts a blue light backlight module.
  • the composite quantum dot color filter unit 24 includes a red quantum dot color filter unit 241 and a green quantum dot color filter unit 242 arranged in layers; the red quantum dot color filter unit 241 is close to the backlight module 10-1 side.
  • the composite quantum dot color filter unit 24 and the red quantum dot color filter unit 21 are arranged on the same layer, or referring to FIG.
  • the composite quantum dot color filter unit 24 and the green quantum dot color filter unit 22 are arranged on the same layer, or, refer to 6, in the composite quantum dot color filter unit 24, the red quantum dot color filter unit 241 and the red quantum dot color filter unit 21 are arranged on the same layer, and the green quantum dot color filter unit 242 and the green quantum dot color filter unit 22 are on the same layer set up.
  • the composite quantum dot color filter unit 24 is stacked in this way to avoid the re-absorption of the long wavelength (red) quantum dot color filter unit to the light emitted by the short wavelength (green) quantum dot color filter unit, thus improving the excitation of the blue light backlight module.
  • the composite quantum dot color filter unit 24 emits the luminous efficiency of white light, which improves the luminous efficiency of the display panel. At the same time, the excess blue light passing through the red quantum dot color filter unit 21 , the green quantum dot color filter unit 22 and the composite quantum dot color filter unit 24 will be reflected by the first reflective layers 30 on both sides of the quantum dot color filter structure 20 .
  • the quantum dot color filter unit 21, the green quantum dot color filter unit 22 and the composite quantum dot color filter unit 24 will not cause blue light to be emitted, which avoids the display of low color purity in each quantum dot color filter unit;
  • the reflection of the second reflection layer 40 can continue to excite a plurality of quantum dot color filter units, thus avoiding the waste of blue light and improving the luminous efficiency of the display panel.
  • FIG. 7 is a schematic top-view structural diagram of a quantum dot display panel provided by an embodiment of the present application. 1-7, the red quantum dot color filter unit 21 includes a plurality of red photonic pixels 211, the green quantum dot color filter unit 22 includes a plurality of green photonic pixels 221, and the blue quantum dot color filter unit 23 includes a plurality of blue light subpixels 231 or the blue light-transmitting area 25 includes a plurality of blue sub-pixels 251; the composite quantum dot color filter unit 24 includes a plurality of white sub-pixels 2411; each adjacent red sub-pixel 211, green sub-pixel 221, blue sub-pixel 231 and The pixel 2411 forms a pixel unit 200; the quantum dot display panel further includes a light-shielding barrier wall 50, and a light-shielding barrier wall 50 is arranged between adjacent pixel units 200, so that a plurality of pixel units 200 can be separated to avoid
  • FIG. 8 is a schematic flowchart of a method for preparing a quantum dot display panel provided by an embodiment of the present application; as shown in FIG. 8 , the preparation method includes:
  • the backlight module 10 includes a plurality of backlight sources arranged in an array.
  • the backlight module 10 may be an ultraviolet backlight module or a blue light backlight module.
  • the backlight module 10 in FIG. 1-3 is an ultraviolet light backlight module; the backlight module 10 in FIG. 4-6 is a blue light backlight module.
  • the quantum dot color film structure 20 is located on one side of the light-emitting surface of the backlight module 10 .
  • the quantum dot color filter structure 20 at least includes a red quantum dot color filter unit 21 , a green quantum dot color filter unit 22 , and a blue quantum dot color filter unit 22 .
  • the red quantum dot color film subunit 241 , the green quantum dot color film subunit 242 and the blue quantum dot color film subunit 243 are stacked and arranged in the same light as the red quantum dot color film unit 21 .
  • the red quantum dot color film subunit 241, the green quantum dot color film subunit 242 and the blue quantum dot color film subunit 243 are stacked together with the green quantum dot color film unit 22. It is completed in the same photolithography process; or, referring to FIG.
  • the red quantum dot color filter unit 21 and the red quantum dot color filter subunit 241 are completed in the same photolithography process
  • the green quantum dot color filter unit 22 and the green quantum dot color filter unit 22 are completed in the same photolithography process.
  • the dot color filter subunit 242 is completed in the same photolithography process
  • the blue quantum dot color filter unit 23 and the blue quantum dot color filter subunit 243 are completed in the same photolithography process to form the composite quantum dot color filter unit 24 .
  • the composite quantum dot color filter unit 24 arranged in layers in this way avoids the re-absorption of the light emitted by the short wavelength (green, blue) quantum dot color filter subunits by the long wavelength (red) quantum dot color filter unit, thus improving the ultraviolet
  • the light backlight module excites the luminous efficiency of the composite quantum dot color filter unit 24 to emit white light, which improves the luminous efficiency of the display panel.
  • the quantum dot color filter structure 20 includes a red quantum dot color filter unit 21 , a green quantum dot color filter unit 22 and a composite quantum dot color filter unit 24 .
  • the red quantum dot color filter unit 21 and the green quantum dot color filter unit 22 are prepared by the method of photolithography, and the red quantum dot color filter unit 21 is located on the side close to the backlight module 10;
  • the color filter unit 21 , the green quantum dot color filter unit 22 and the composite quantum dot color filter unit 24 do not overlap each other.
  • the red quantum dot color filter subunit 241 and the green quantum dot color filter subunit 242 in the composite quantum dot color filter unit 24 are laminated and prepared.
  • the red quantum dot color filter sub-unit 241 and the green quantum dot color filter sub-unit 242 are stacked in the same photolithography process as the red quantum dot color filter unit 21, or, refer to FIG. 5
  • the red quantum dot color film subunit 241 and the green quantum dot color film subunit 242 are stacked and arranged in the same photolithography process as the green quantum dot color film unit 22, or, referring to FIG.
  • the red quantum dot color film The unit 21 and the red quantum dot color filter unit 241 are completed in the same photolithography process, and the green quantum dot color filter unit 22 and the green quantum dot color filter unit 242 are completed in the same photolithography process to form a composite quantum dot color filter. unit 24.
  • the composite quantum dot color filter unit 24 arranged in layers in this way avoids the re-absorption of the light emitted by the long wavelength (red) quantum dot color filter subunit to the short wavelength (green) quantum dot color filter unit, thus improving the blue light backlight mode.
  • the luminous efficiency of the white light emitted by the group excited composite quantum dot color filter unit 24 improves the luminous efficiency of the display panel.
  • the backlight module 10 emits short-wavelength light to excite a plurality of non-overlapping quantum dot color filter units to emit red light, green light, blue light and white light respectively, so as to realize full-color display of the display panel; or the backlight module
  • the group 10 emits short-wavelength light, respectively excites a plurality of non-overlapping quantum dot color filter units to emit red light, green light and white light correspondingly, and cooperates with the blue light-transmitting area 25 to realize full-color display of the display panel.
  • Each quantum dot color filter unit emits light independently without color filter, which improves the luminous efficiency of the display panel.
  • the addition of the composite quantum dot color filter unit 24 also improves the display brightness of the display panel.
  • red quantum dot color filter unit 21 and the green quantum dot color filter unit 22 are stacked on the side near the backlight module 10; or the red quantum dot color filter unit 21 and the green quantum dots are stacked on the side near the backlight module 10
  • the color filter unit 22 and the blue quantum dot color filter unit 23 can reduce the long-wavelength quantum dot color filter unit (red quantum dot color filter unit 21) to the short wavelength quantum dot color filter unit (green quantum dot color filter unit 22, blue
  • the reabsorption of the emitted light from the quantum dot color filter unit 23) improves the overall luminous efficiency of the display panel.
  • the composite quantum dot color filter units 24 are stacked to improve the luminous efficiency of the white light emitted by the display panel; at the same time, the excess short-wavelength light passing through the multiple quantum dot color filter units will be reflected by the two sides of the quantum dot color filter structure 20.
  • the layer reflection continues to excite multiple quantum dot color filter units, avoiding the waste of short-wavelength light, thereby improving the luminous efficiency of the display panel.
  • the red and green quantum dot materials are mixed together to form a quantum dot color filter unit, or the red, green and blue quantum dot materials are mixed together to form a quantum dot color filter unit, and the backlight module in the display panel is passed through.
  • the red, green and blue light converted by the quantum dot color filter unit needs to be filtered by a color filter, resulting in a decrease in the luminous efficiency of the display panel and red, green or red, green and blue quantum dots.
  • the materials are directly mixed, and the quantum dots will affect each other during the preparation and use of the quantum dot color filter structure, resulting in performance degradation and poor reliability.
  • FIGS. 9-21 are diagrams of a photolithographic preparation process of a quantum dot display panel provided by an embodiment of the present application
  • FIG. 22 is a schematic diagram of a photolithographic preparation process of a quantum dot display panel provided by an embodiment of the present application.
  • the backlight module 10 is an ultraviolet backlight module
  • the quantum dot color film structure 20 is prepared by a photolithography method.
  • the preparation steps of the display panel are as follows:
  • a light-shielding barrier wall 50 is fabricated through a photolithography process.
  • a light-shielding barrier wall structure layer 500 is prepared on the side of the first quantum dot substrate 100 , and then a plurality of light-shielding barrier walls 50 are formed by etching the light-shielding barrier wall structure layer 500 through the barrier wall mask 501 .
  • the light-shielding and blocking wall structure layer 500 may use some organic materials and opaque materials dispersed in the organic materials. Multiple quantum dot color filter units formed subsequently can be separated to prevent optical crosstalk.
  • the red quantum dot color filter unit 21 is formed by using the first mask 502 , and also by photolithography and development.
  • the preparation steps of the quantum dot photoresist are as follows: firstly prepare a core of quantum dot material (preferred core material of quantum dots is cadmium selenide (CdSe), indium phosphide (InP), bromine lead cesium (One or at least two composite materials of Caesium Plumbum Bromine3, CsPbBr3), a mixed material composed of quantum dot shell coating material and quantum dot surface ligand material, and the mixed material is centrifuged and purified to obtain a quantum dot solution; Then, the mixed quantum dot solution is added to the glue monomer and stirred; finally, the obtained mixed solution of the quantum dot solution and the glue monomer is added to a photoinitiator and stirred to obtain a quantum dot photoresist.
  • a core of quantum dot material is cadmium selenide (CdSe), indium
  • red quantum dots and photoresist to form red quantum dot photoresist is to fill the red quantum dot photoresist in the first groove structure, and then cure the red quantum dot photoresist, and then follow
  • the thickness of the red quantum dot photoresist filling layer can be precisely controlled in the photolithography process.
  • the red quantum dot photoresist can be precisely controlled to be photoetched to a specified depth, or the red quantum dot photoresist overflowing around the first groove structure A can be removed by photolithography.
  • the second mask 503 is used, and the green quantum dot color filter unit 22 and the composite quantum dot color filter unit 24 are also formed by the methods of photolithography and development.
  • the green quantum dot color filter unit 22 and the composite quantum dot color filter unit 24 are formed in the same photolithography process, which can avoid the pairing of long-wavelength quantum dot (red, green quantum dot) color filter subunits in the composite quantum dot color filter unit 24
  • the reabsorption of the light emitted by the short-wavelength quantum dot color filter unit (blue quantum dot color filter unit 23 ) improves the overall luminous efficiency of the display panel.
  • the effect of using green quantum dot photoresist is the same as that of using red quantum dot photoresist.
  • the composite quantum dot color filter unit 24 is prepared by laminating red quantum dot photoresist, green quantum dot photoresist and blue quantum dot photoresist, which avoids the medium and long wavelength (red and long wavelengths) of the composite quantum dot color filter unit 24. ) The re-absorption of the short-wavelength (green, blue) quantum dot color film sub-unit of the quantum dot color film sub-unit, thus improving the luminous efficiency of the backlight module 10 to excite the composite quantum dot color film unit 24 to emit white light, improving the The luminous efficiency of the display panel. Wherein, in the preparation process, since the quantum dot photoresist is used, the thickness of each quantum dot photoresist filling layer in the composite quantum dot color filter unit 24 can be precisely controlled.
  • the function of the blue quantum dot photoresist is the same as that of the red quantum dot photoresist, which will not be repeated here. 19-21, the third mask 504 is used, and the blue quantum dot color filter unit 23 is also formed by photolithography and development.
  • the ultraviolet backlight module emits ultraviolet light to excite the discrete red quantum dot color filter unit 21 , the green quantum dot color filter unit 22 , the blue quantum dot color filter unit 23 and the composite quantum dot color filter unit 24 that do not overlap with each other. It emits red, green, blue and white light, realizing the full-color display of the quantum dot display panel.
  • Each quantum dot color filter unit emits light independently, without the need for filter filtering, and also improves the luminous efficiency of the display panel.
  • the dot color filter unit 24 also improves the brightness of the display panel.
  • the laminated arrangement of the composite quantum dot color film monocular 24 improves the luminous efficiency of the white light emitted by the display panel.
  • the red quantum dot color film unit 21, the green quantum dot color film unit 22 and The blue quantum dot color filter unit 23 can reduce the long-wavelength quantum dot color filter unit (red quantum dot color filter unit 21 ) to the short wavelength quantum dot color filter unit (green quantum dot color filter unit 22 , blue quantum dot color filter unit 22 , blue quantum dot color filter unit 21 )
  • the unit 23) reabsorption of the emitted light improves the luminous efficiency of the display panel.
  • the backlight module 10 is an ultraviolet backlight module, and a photolithography method is used to prepare the quantum dot color filter structure 20, wherein the composite quantum dot color filter unit 24 and the green quantum The dot color filter unit 22 is completed in the same photolithography process; the preparation process of the quantum dot color filter structure 20 is as follows:
  • the backlight module 10 is an ultraviolet backlight module
  • the quantum dot color film structure 20 is prepared by a photolithography method, wherein the red quantum dots in the composite quantum dot color film unit 24 are The dot color film subunit 241 and the red quantum dot color film unit 21 are completed in the same photolithography process, the green quantum dot color film subunit 242 and the green quantum dot color filter unit 22 are completed in the same photolithography process, and the blue quantum dots are completed in the same photolithography process.
  • the color filter subunit 243 and the blue quantum dot color filter unit 23 are completed in the same photolithography process to form the composite quantum dot color filter unit 24; the preparation process of the quantum dot color filter structure 20 is as follows:
  • the second quantum dot substrate is located on the side of the red quantum dot color filter unit 21 away from the backlight module 10; a second mask is used to form a plurality of second groove structures on the second quantum dot substrate;
  • the green quantum dot photoresist is filled in the groove structure to form the green quantum dot color filter unit 22; the green quantum dot photoresist is filled into the rest of the plurality of second groove structures to form the green quantum dot color film in the composite quantum dot color filter unit 24.
  • Membrane subunit 242 providing a third quantum dot substrate; the third quantum dot substrate is located on the side of the green quantum dot color filter unit 22 away from the red quantum dot color filter unit 21; a third mask is used on the third quantum dot substrate forming a plurality of third groove structures on the material; filling part of the third groove structures with blue quantum dot photoresist to form a blue quantum dot color filter unit 23; filling the rest of the plurality of second groove structures with blue The color quantum dot photoresist forms the blue quantum dot color film subunit 243 in the composite quantum dot color film unit 24; wherein, the red quantum dot color film subunit 241, the green quantum dot color film subunit 242 and the blue quantum dot color film The projections of the membrane subunits 243 on the first quantum dot substrate overlap.
  • the backlight module 10 is a blue light backlight module
  • the quantum dot color film structure 20 is prepared based on the same photolithography process, wherein the composite quantum dot color filter unit 24 and the red quantum dot color filter unit 21 are in the same photolithography process.
  • the quantum dot color filter structure 20 includes:
  • first quantum dot base material using a first mask to form a plurality of first groove structures on the first quantum dot base material; filling the plurality of first groove structures with red quantum dot photoresist to form red quantum dots dot color filter unit 21; provide a second quantum dot substrate; the second quantum dot substrate is located on the side of the red quantum dot color filter unit 21 away from the backlight module 10; a second mask is used on the second quantum dot substrate forming a plurality of second groove structures; filling part of the second groove structures with green quantum dot photoresist to form a green quantum dot color filter unit 22; filling the rest of the second groove structures with red quantum dots stacked in sequence
  • the dot photoresist, the green quantum dot photoresist and the blue quantum dot photoresist form a composite quantum dot color filter unit 24 .
  • the backlight module 10 is a blue light backlight module
  • the quantum dot color filter structure 20 is prepared based on the same photolithography process, wherein the composite quantum dot color filter unit 24 and the green quantum dot color filter unit 22 are prepared in the same photolithography process.
  • the quantum dot color filter structure 20 includes:
  • a first quantum dot base material using a first mask to form a plurality of first groove structures on the first quantum dot base material; filling part of the plurality of first groove structures with red quantum dot photoresist to form red Quantum dot color film unit 21; fill the rest of the first groove structure with red quantum dot photoresist, green quantum dot photoresist and blue quantum dot photoresist which are stacked in sequence to form a composite quantum dot color film unit 24; provide a second quantum dot substrate; the second quantum dot substrate is located on the side of the red quantum dot color filter unit 21 away from the backlight module 10; a second mask is used to form a plurality of first quantum dots on the second quantum dot substrate; Two groove structures; the green quantum dot photoresist is filled into the second groove structure to form a green quantum dot color filter unit 22 .
  • the backlight module 10 is a blue light backlight module
  • the quantum dot color film structure 20 is prepared based on the same photolithography process, wherein the red quantum dot color film subunit 241 in the composite quantum dot color film unit 24 and the red quantum dot color film
  • the unit 21 is completed in the same photolithography process
  • the green quantum dot color filter subunit 242 and the green quantum dot color filter unit 22 are completed in the same photolithography process to form the composite quantum dot color filter unit 24.
  • the quantum dot color filter structure 20 includes:
  • the same composite quantum dot color filter unit 24 is stacked and arranged, so as to avoid the long-wavelength (red) quantum dot color filter sub-unit to the short-wavelength (green) quantum dot color filter sub-unit.
  • the reabsorption of the emitted light improves the luminous efficiency of the white light emitted by the composite quantum dot color filter unit 24 excited by the blue-light backlight module, and improves the luminous efficiency of the display panel.
  • An embodiment of the present application further provides a quantum dot display device, and the display device includes the quantum dot display panel provided in any of the above embodiments. Therefore, the quantum dot display device provided by the embodiment of the present application has the features of any of the above embodiments. The technical effect of the technical solution will not be repeated here.

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Abstract

一种量子点显示面板、制备方法及显示装置，量子点显示面板包括背光模组（10）；量子点彩膜结构（20），位于背光模组（10）出光面的一侧；量子点彩膜结构（20）至少包括红色量子点彩膜单元（21）、绿色量子点彩膜单元（22）和复合量子点彩膜单元（24）；红色量子点彩膜单元（21）和绿色量子点彩膜单元（22）叠层设置，红色量子点彩膜单元（21）较绿色量子点彩膜单元（22）靠近背光模组（10）的一侧；复合量子点彩膜单元（24）至少包括叠层设置的红色量子点彩膜子单元（241）和绿色量子点彩膜子单元（242）；红色量子点彩膜子单元（241）较绿色量子点彩膜子单元（242）靠近背光模组（10）一侧；第一反射层（30），设置于量子点彩膜结构（20）背离背光模组（10）的一侧，第一反射层（30）覆盖红色量子点彩膜单元（21）及绿色量子点彩膜单元（22）；第二反射层（40），设置于背光模组（10）背离量子点彩膜结构（20）一侧。

Description

量子点显示面板及其制备方法、显示装置
本申请要求在2020年12月25日提交中国专利局、申请号为202011566759.8的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术邻域，例如涉及一种量子点显示面板及其制备方法、显示装置。
背景技术
量子点(Quantum Dot，QD)材料的粒径一般介于1～10nm之间，由于电子和空穴被量子限域，连续的能带结构变成分立能级结构，因此发光光谱非常窄(20-30nm)，色度纯高，显示色域广。量子点由于其特殊的特性，作为新一代发光材料，在显示应用中正逐渐崭露头角。量子点材料通过吸收部分波段的蓝光，激发出部分波段的绿光及红光，能够有效地提高显示屏幕的色域，满足高品质显示应用的需求。
量子点彩膜是显示器件实现超高色域全彩显示的关键部件。相关技术中，量子点彩膜技术通常是将红、绿量子点材料混合在一起形成量子点色转换膜，显示面板中蓝色背光源在经过显示模组及量子点色转换膜之后，还需经过彩色滤光片将经过量子点色转换膜转换后的红、绿光及剩余的蓝光进行过滤，如此每个像素点将过滤掉其他两种颜色的光，造成该像素点发出光的效率变低，降低显示面板的发光效率。另外，上述方案中将红、绿量子点及红绿量子点直接混合分别制备红色量子点彩膜单元、绿色量子点彩膜单元及复合量子点彩膜单元，如此红绿量子点直接混合制备复合量子点彩膜单元会造成红色量子点对绿色量子点发射光的再吸收，降低显示面板白光的发光效率，降低显示面板的整体发光效率。
发明内容
本申请提供一种量子点显示面板及其制备方法、显示装置，以提高量子点显示面板的发光效率和显示亮度。
提供了一种量子点显示面板，该量子点显示面板包括：
背光模组；
量子点彩膜结构，位于所述背光模组出光面的一侧；所述量子点彩膜结构 至少包括红色量子点彩膜单元、绿色量子点彩膜单元和复合量子点彩膜单元；
其中，所述红色量子点彩膜单元和所述绿色量子点彩膜单元叠层设置，所述红色量子点彩膜单元较所述绿色量子点彩膜单元靠近所述背光模组的一侧，且所述红色量子点彩膜单元、所述绿色量子点彩膜单元和所述复合量子点彩膜单元两两互不交叠；所述复合量子点彩膜单元至少包括叠层设置的红色量子点彩膜子单元和绿色量子点彩膜子单元；所述红色量子点彩膜子单元较所述绿色量子点彩膜子单元靠近所述背光模组一侧；
第一反射层，设置于所述量子点彩膜结构背离所述背光模组的一侧，所述第一反射层覆盖所述红色量子点彩膜单元和所述绿色量子点彩膜单元；
第二反射层，设置于所述背光模组背离所述量子点彩膜结构一侧，所述第二反射层覆盖所述量子点彩膜结构。
还提供了一种量子点显示面板的制备方法，该制备方法包括：
提供背光模组；
制备量子点彩膜结构；其中，所述量子点彩膜结构位于所述背光模组出光面的一侧；所述量子点彩膜结构至少包括红色量子点彩膜单元、绿色量子点彩膜单元和复合量子点彩膜单元；所述红色量子点彩膜单元和所述绿色量子点彩膜单元叠层设置，所述红色量子点彩膜单元较所述绿色量子点彩膜单元靠近所述背光模组的一侧，且所述红色量子点彩膜单元、所述绿色量子点彩膜单元和所述复合量子点彩膜单元两两互不交叠；所述复合量子点彩膜单元至少包括叠层设置的红色量子点彩膜子单元和绿色量子点彩膜子单元；所述红色量子点彩膜子单元较所述绿色量子点彩膜子单元靠近所述背光模组一侧；
在所述量子点彩膜结构背离所述背光模组的一侧形成第一反射层，其中，所述第一反射层覆盖所述红色量子点彩膜单元和所述绿色量子点彩膜单元；
在所述背光模组背离所述量子点彩膜结构一侧形成第二反射层，其中，所述第二反射层覆盖所述量子点彩膜结构。
还提供了一种显示装置，该显示装置包括上述的量子点显示面板。
附图说明
图1是本申请实施例提供的一种量子点显示面板的结构示意图；
图2是本申请实施例提供的另一种量子点显示面板的结构示意图；
图3是本申请实施例提供的另一种量子点显示面板的结构示意图；
图4是本申请实施例提供的另一种量子点显示面板的结构示意图；
图5是本申请实施例提供的另一种量子点显示面板的结构示意图；
图6是本申请实施例提供的另一种量子点显示面板的结构示意图；
图7是本申请实施例提供的一种量子点显示面板的俯视结构示意图；
图8是本申请实施例提供的一种量子点显示面板制备方法的流程示意图；
图9为本申请实施例提供的一种量子点显示面板光刻制备过程图；
图10为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图11为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图12为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图13为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图14为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图15为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图16为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图17为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图18为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图19为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图20为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图21为本申请实施例提供的另一种量子点显示面板光刻制备过程图；
图22为本申请实施例提供的一种量子点显示面板光刻制备流程示意图。
具体实施方式
下面结合附图和实施例对本申请进行说明。
图1是本申请实施例提供的一种量子点显示面板的结构示意图，图2是本申请实施例提供的另一种量子点显示面板的结构示意图。如图1和图2所示，该量子点显示面板包括：背光模组10；量子点彩膜结构20，位于背光模组10出光面的一侧；量子点彩膜结构20至少包括红色量子点彩膜单元21、绿色量子点彩膜单元22和复合量子点彩膜单元24；红色量子点彩膜单元21和绿色量子点彩膜单元22叠层设置，红色量子点彩膜单元21靠近背光模组10的一侧，且红色量子点彩膜单元21、绿色量子点彩膜单元22和复合量子点彩膜单元24两两互不交叠；其中，复合量子点彩膜单元24至少包括叠层设置的红色量子点彩膜子单元241和绿色量子点彩膜子单元242；红色量子点彩膜子单元241靠近背 光模组10一侧；第一反射层30，设置于量子点彩膜结构20背离背光模组10的一侧，第一反射层30覆盖红色量子点彩膜单元21和绿色量子点彩膜单元22；第二反射层40，设置于背光模组10背离量子点彩膜结构20一侧，第二反射层40覆盖量子点彩膜结构20。
背光模组10包括阵列排布的多个背光源，例如可以为发光二极管(Light Emitting Diode，LED)背光源、Micro-LED光源、Mini-LED矩阵光源及有机发光二极管(Organic Light-Emitting Diode，OLED)光源中任一种。背光模组10可以为紫外光背光模组、蓝光背光模组。紫外光背光模组发射出发射光峰值波长为230-395nm的紫外光；蓝光背光模组可以发射出发射光峰值波长为420-480nm的蓝光。
示例性的，图1和图2示意出背光模组10为紫外光背光模组的情况。量子点彩膜结构20包括红色量子点彩膜单元21、绿色量子点彩膜单元22、蓝色量子点彩膜单元23和复合量子点彩膜单元24，红色量子点彩膜单元21、绿色量子点彩膜单元22和蓝色量子点彩膜单元23叠层设置，红色量子点彩膜单元21靠近背光模组10的一侧，且红色量子点彩膜单元21、绿色量子点彩膜单元22、蓝色量子点彩膜单元23和复合量子点彩膜单元24两两互不交叠。当背光模组10采用紫外光背光模组，紫外光背光模组发出紫外光，激发互不交叠的红色量子点彩膜单元21、绿色量子点彩膜单元22、蓝色量子点彩膜单元23和复合量子点彩膜单元24对应发出红光、绿光、蓝光及白光，实现显示面板的全彩色显示；每个量子点彩膜单元独立发光，也提高了显示面板的发光效率；由于增加复合量子点彩膜单元24还提高了显示面板的显示亮度。
另外，靠近紫外背光模组一侧叠层设置的红色量子点彩膜单元21、绿色量子点彩膜单元22及蓝色量子点彩膜单元23，可以减少长波长量子点彩膜单元(红色量子点彩膜单元21)对短波长量子点彩膜单元(绿、蓝色量子点彩膜单元)发射光的再吸收，提高了显示面板整体的发光效率。
图3是本申请实施例提供的另一种量子点显示面板的结构示意图，图3示意出背光模组10采用紫外光背光模组的情况。参照图1-3，复合量子点彩膜单元24包括叠层设置的红色量子点彩膜子单元241、绿色量子点彩膜子单元242和蓝色量子点彩膜子单元243；红色量子点彩膜子单元241靠近背光模组10一侧。参照图1，复合量子点彩膜单元24与红色量子点彩膜单元21同层设置。或者，参照图2，复合量子点彩膜单元24与绿色量子点彩膜单元22同层设置。这样复合量子点彩膜单元24与绿色量子点彩膜单元22同层设置或与红色量子点彩膜单元21同层设置，可避免复合量子点彩膜单元24中的长波长(红、绿)量子点彩膜子单元对短波长量子点彩膜单元(蓝色量子点彩膜单元23)发射光 的再吸收。或者，参照图3，复合量子点彩膜单元24中红色量子点彩膜子单元241与红色量子点彩膜单元21同层设置，且绿色量子点彩膜子单元242与绿色量子点彩膜单元22同层设置，且蓝色量子点彩膜子单元243与蓝色量子点彩膜单元23同层设置，复合量子点彩膜单元24如此叠层设置避免了长波长(红)量子点彩膜子单元对短波长(绿、蓝)量子点彩膜子单元发射光的再吸收，这样提高了紫外光背光模组激发复合量子点彩膜单元24发出白光的发光效率，提高显示面板的发光效率。
相关技术中，将红、绿、蓝量子点材料混合在一起形成一量子点彩膜单元，显示面板中紫外光背光模组在经过量子点彩膜单元之后，还需再经过彩色滤光片将经过量子点彩膜单元转换后的红、绿光、蓝光过滤，导致显示面板的发光效率降低等问题。本技术方案通过叠层设置多个量子点彩膜单元，紫外光背光模组发出紫外光分别激发多个量子点彩膜单元发出红、绿、蓝、白光，无需再经过彩色滤波片进行过滤，如此在实现全彩色显示的基础上，提高了显示面板的发光效率；叠层设置的复合量子点彩膜单元24提高了显示面板的发光效率；同时经过红色量子点彩膜单元21、绿色量子点彩膜单元22及蓝色量子点彩膜单元23的过量的紫外光会被量子点彩膜结构20两侧的第一反射层30反射，这样在红色量子点彩膜单元21、绿色量子点彩膜单元22、蓝色量子点彩膜单元23及复合量子点彩膜单元24处不会造成紫外光出射，避免了在每个量子点彩膜单元显示色纯度不高；过量的紫外光经过第二反射层40的反射可以继续激发多个量子点彩膜单元，避免了紫外光的浪费，提升了显示面板的发光效率。
示例性的，图4是本申请实施例提供的另一种量子点显示面板的结构示意图，图5是本申请实施例提供的另一种量子点显示面板的结构示意图。如图4和图5所示，图4和图5中背光模组10采用蓝色背光模组；量子点彩膜结构20包括红色量子点彩膜单元21、绿色量子点彩膜单元22和复合量子点彩膜单元24，还包括蓝光透光区25；红色量子点彩膜单元21和绿色量子点彩膜单元22叠层设置，红色量子点彩膜单元21靠近背光模组10的一侧，且红色量子点彩膜单元21、绿色量子点彩膜单元22和复合量子点彩膜单元24两两互不交叠。当背光模组10为蓝色背光模组，蓝光背光模组发出蓝光，激发互不交叠的红色量子点彩膜单元21、绿色量子点彩膜单元22及复合量子点彩膜单元24对应发出红、绿及白光，配合蓝光透光区25发出蓝光，实现了全彩色显示；每个量子点彩膜单元单独发光，无需经过彩色滤波片滤光，提高了显示面板的发光效率；由于增加了复合量子点彩膜单元24还提高了显示面板的显示亮度。
另外，靠近蓝光背光模组一侧叠层设置的红色量子点彩膜单元21及绿色量子点彩膜单元22，可以减少红色量子点彩膜单元21对绿色量子点彩膜单元22发射光的再吸收，从而提高了显示面板整体的发光效率。
图6是本申请实施例提供的另一种量子点显示面板的结构示意图，图6示意出背光模组10采用蓝光背光模组的情况。如图6所示，复合量子点彩膜单元24包括叠层设置的红色量子点彩膜子单元241和绿色量子点彩膜子单元242；红色量子点彩膜子单元241靠近背光模组10一侧。参照图4，复合量子点彩膜单元24与红色量子点彩膜单元21同层设置，或者参照图5，复合量子点彩膜单元24与绿色量子点彩膜单元22同层设置，或者，参照图6，复合量子点彩膜单元24中红色量子点彩膜子单元241与红色量子点彩膜单元21同层设置，且绿色量子点彩膜子单元242与绿色量子点彩膜单元22同层设置。复合量子点彩膜单元24如此叠层设置避免了长波长(红)量子点彩膜子单元对短波长(绿)量子点彩膜子单元发射光的再吸收，这样提高了蓝光背光模组激发复合量子点彩膜单元24发出白光的发光效率，提高了显示面板的发光效率。同时经过红色量子点彩膜单元21、绿色量子点彩膜单元22及复合量子点彩膜单元24的过量的蓝光会被量子点彩膜结构20两侧的第一反射层30反射，这样在红色量子点彩膜单元21、绿色量子点彩膜单元22及复合量子点彩膜单元24处不会造成蓝光出射，避免了在每个量子点彩膜单元显示色纯度不高；过量的蓝光经过第二反射层40的反射可以继续激发多个量子点彩膜单元，避免了蓝光的浪费，提升了显示面板的发光效率。
可选的，在上述实施例的基础上进行说明。图7是本申请实施例提供的一种量子点显示面板的俯视结构示意图。参照图1-7，红色量子点彩膜单元21包括多个红光子像素211，绿色量子点彩膜单元22包括多个绿光子像素221，蓝色量子点彩膜单元23包括多个蓝光子像素231或者蓝光透光区25包括多个蓝光子像素251；复合量子点彩膜单元24包括多个白光子像素2411；每相邻红光子像素211、绿光子像素221、蓝光子像素231及白光子像素2411形成一像素单元200；量子点显示面板还包括遮光挡墙50，相邻像素单元200之间设置有遮光挡墙50，这样可以将多个像素单元200隔开，避免出现光串扰，提高显示面板的分辨率。
本申请实施例还提供了一种量子点显示面板制备方法，图8是本申请实施例提供的一种量子点显示面板制备方法的流程示意图；如图8所示，该制备方法包括：
S110、提供背光模组。
参照图1-6所示的量子点显示面板结构示意图，背光模组10包括阵列排布的多个背光源。背光模组10可以为紫外光背光模组、蓝光背光模组。图1-3中背光模组10为紫外光背光模组；图4-6中背光模组10为蓝光背光模组。
S120、制备量子点彩膜结构。
参照图1-6，量子点彩膜结构20位于背光模组10出光面的一侧。如图1-3所示，当背光模组10为紫外光背光模组，量子点彩膜结构20至少包括红色量子点彩膜单元21、绿色量子点彩膜单元22、蓝色量子点彩膜单元23和复合量子点彩膜单元24；本技术方案通过光刻的方法制备叠层设置的红色量子点彩膜单元21、绿色量子点彩膜单元22及蓝色量子点彩膜单元23，且红色量子点彩膜单元21位于靠近背光模组10的一侧；其中，红色量子点彩膜单元21、绿色量子点彩膜单元22、蓝色量子点彩膜单元23及复合量子点彩膜单元24两两互不交叠。参照图1-3，复合量子点彩膜单元24中红色量子点彩膜子单元241、绿色量子点彩膜子单元242及蓝色量子点彩膜子单元243叠层制备。示例性的，参照图1，红色量子点彩膜子单元241、绿色量子点彩膜子单元242及蓝色量子点彩膜子单元243叠层设置后与红色量子点彩膜单元21在同一光刻工艺中完成，或者，参照图2，红色量子点彩膜子单元241、绿色量子点彩膜子单元242及蓝色量子点彩膜子单元243叠层设置后与绿色量子点彩膜单元22在同一光刻工艺中完成；又或者，参照图3，红色量子点彩膜单元21与红色量子点彩膜子单元241在同一光刻工艺中完成，且绿色量子点彩膜单元22与绿色量子点彩膜子单元242在同一光刻工艺中完成，且蓝色量子点彩膜单元23与蓝色量子点彩膜子单元243在同一光刻工艺中完成以形成复合量子点彩膜单元24。如此采用叠层设置的复合量子点彩膜单元24避免了长波长(红)量子点彩膜子单元对短波长(绿、蓝)量子点彩膜子单元发射光的再吸收，这样提高了紫外光背光模组激发复合量子点彩膜单元24发出白光的发光效率，提高了显示面板的发光效率。
参照图4-6，当背光模组10为蓝光背光模组，量子点彩膜结构20包括红色量子点彩膜单元21、绿色量子点彩膜单元22和复合量子点彩膜单元24。本技术方案通过光刻的方法制备叠层设置的红色量子点彩膜单元21及绿色量子点彩膜单元22，且红色量子点彩膜单元21位于靠近背光模组10的一侧；红色量子点彩膜单元21、绿色量子点彩膜单元22及复合量子点彩膜单元24两两互不交叠。参照图4-6，复合量子点彩膜单元24中红色量子点彩膜子单元241及绿色量子点彩膜子单元242叠层制备。示例性的，参照图4，红色量子点彩膜子单元241及绿色量子点彩膜子单元242叠层设置后与红色量子点彩膜单元21在同一光刻工艺中完成，或者，参照图5，红色量子点彩膜子单元241及绿色量子点彩膜子单元242叠层设置后与绿色量子点彩膜单元22在同一光刻工艺中完成，又或者，参照图6，红色量子点彩膜单元21与红色量子点彩膜子单元241在同一光刻工艺中完成，且绿色量子点彩膜单元22与绿色量子点彩膜子单元242在同一光刻工艺中完成以形成复合量子点彩膜单元24。如此采用叠层设置的复合量子点彩膜单元24避免了长波长(红)量子点彩膜子单元对短波长(绿)量子点彩膜子单元发射光的再吸收，这样提高了蓝光背光模组激发复合量子点彩膜单 元24发出白光的发光效率，提高了显示面板的发光效率。
S130、在量子点彩膜结构背离背光模组的一侧形成第一反射层。
S140、在背光模组背离量子点彩膜结构一侧形成第二反射层。
本技术方案通过背光模组10发出短波长光线，分别激发互不交叠的多个量子点彩膜单元对应发出红光、绿光、蓝光及白光，实现显示面板的全彩色显示；或者背光模组10发出短波长光线，分别激发互不交叠的多个量子点彩膜单元对应发出红光、绿光及白光，配合蓝光透光区25，实现显示面板的全彩色显示。每个量子点彩膜单元独立发光，无需彩色滤光片滤光，提高了显示面板的发光效率。增加复合量子点彩膜单元24还提高了显示面板的显示亮度。另外，靠近背光模组10一侧叠层设置红色量子点彩膜单元21、绿色量子点彩膜单元22；或者靠近背光模组10一侧叠层设置红色量子点彩膜单元21、绿色量子点彩膜单元22及蓝色量子点彩膜单元23可以减少长波长量子点彩膜单元(红色量子点彩膜单元21)对短波长量子点彩膜单元(绿色量子点彩膜单元22、蓝色量子点彩膜单元23)发射光的再吸收，提高了显示面板整体的发光效率。再者，复合量子点彩膜单元24叠层设置，提高了显示面板发出白光的发光效率；同时经过多个量子点彩膜单元过量的短波长光会被量子点彩膜结构20两侧的反射层反射继续激发多个量子点彩膜单元，避免了短波长光的浪费，从而提升了显示面板的发光效率。解决了相关技术中将红、绿量子点材料混合在一起形成量子点彩膜单元，或者将红、绿、蓝量子点材料混合在一起形成量子点彩膜单元，显示面板中背光模组在经过量子点彩膜单元之后，还需再经过彩色滤光片将经过量子点彩膜单元转换后的红、绿光及蓝光过滤，导致显示面板的发光效率降低及红、绿或者红绿蓝量子点材料直接混合，在量子点彩膜结构制备和使用过程中各量子点会相互影响，造成性能劣化，可靠性差等问题。
图9-图21为本申请实施例提供的量子点显示面板光刻制备过程图，图22为本申请实施例提供的一种量子点显示面板光刻制备流程示意图。其中，参照图9-图21，背光模组10为紫外光背光模组，采用光刻的方法制备量子点彩膜结构20，该显示面板制备步骤为：
S210、提供紫外光背光模组10。
S211、提供第一量子点基材100。
S212、采用第一掩膜版502在第一量子点基材100上形成多个第一凹槽结构A。
S213、向多个第一凹槽结构A内填充红色量子点光刻胶形成红色量子点彩膜单元21。
参照图9-10，在量子点彩膜结构20制备之前，通过光刻工艺制备遮光挡墙50。首先在第一量子点基材100一侧制备遮光挡墙结构层500，然后通过挡墙掩膜版501刻蚀遮光挡墙结构层500形成多个遮光挡墙50。其中，遮光挡墙结构层500可以采用一些有机材料以及分散设置于有机材料中的不透光材料。可以将后续形成的多个量子点彩膜单元隔开，防止光串扰。
参照图11-图12，采用第一掩膜版502，同样采用光刻、显影的方法形成红色量子点彩膜单元21。其中，量子点光刻胶的制备步骤为：首先制备由量子点材料核心(优选的量子点核心材料为硒化镉(Cadmium Selenide，CdSe)、磷化铟(Indium Phosphide，InP)、溴铅铯(Caesium Plumbum Bromine3，CsPbBr3)中的一种或至少两种的复合材料)、量子点外壳包覆层材料及量子点表面配体材料组成的混合材料，混合材料经过离心、提纯得到量子点溶液；然后将混合后的量子点溶液加入胶水单体中，进行搅拌；最后将所得的量子点溶液与胶水单体的混合液加入光引发剂，进行搅拌，得到了量子点光刻胶。
示例性的，使用红色量子点和光刻胶混合形成红色量子点光刻胶的目的在于：在第一凹槽结构内填充红色量子点光刻胶，然后固化红色量子点光刻胶，在后续利用光刻工艺中能精确控制红色量子点光刻胶填充层的厚度。例如，可以精确控制红色量子点光刻胶光刻到指定深度，或通过光刻去除掉第一凹槽结构A周围溢出的红色量子点光刻胶。
S214、提供第二量子点基材101。
S215、采用第二掩膜版503在第二量子点基材101上形成多个第二凹槽结构B。
S216、向部分第二凹槽结构B内填充绿色量子点光刻胶形成绿色量子点彩膜单元22；向其余部分第二凹槽结构B内填充依次叠层设置的红色量子点光刻胶、绿色量子点光刻胶及蓝色量子点光刻胶形成复合量子点彩膜单元24。
参照图13-18，采用第二掩膜版503，同样采用光刻、显影的方法形成绿色量子点彩膜单元22及复合量子点彩膜单元24。绿色量子点彩膜单元22及复合量子点彩膜单元24在同一光刻工艺中形成，可避免复合量子点彩膜单元24中的长波长量子点(红色、绿色量子点)彩膜子单元对短波长量子点彩膜单元(蓝色量子点彩膜单元23)发射光的再吸收，提高了显示面板整体的发光效率。采用绿色量子点光刻胶作用与采用红色量子点光刻胶的作用是相同的。复合量子点彩膜单元24是通过红色量子点光刻胶、绿色量子点光刻胶及蓝色量子点光刻胶叠层制备而成，避免了复合量子点彩膜单元24中长波长(红)量子点彩膜子单元对短波长(绿、蓝)量子点彩膜子单元发射光的再吸收，这样提高了背光模组10激发复合量子点彩膜单元24发出白光的发光效率，提高了显示面板的 发光效率。其中，在制备工艺中，由于采用量子点光刻胶，可以精确控制复合量子点光彩膜单元24中每个量子点光刻胶填充层的厚度。
S217、提供第三量子点基材102。
S218、采用第三掩膜版504在第三量子点基材102上形成多个第三凹槽结构C。
S219、向多个第三凹槽结构C内填充蓝色量子点光刻胶形成蓝色量子点彩膜单元23。
蓝色量子点光刻胶的作用与红色量子点光刻胶的作用是相同，这里不再赘述。参照图19-21，采用第三掩膜版504，同样采用光刻、显影的方法形成蓝色量子点彩膜单元23。如此紫外背光模组发出紫外光，激发互不交叠的分立的红色量子点彩膜单元21、绿色量子点彩膜单元22、蓝色量子点彩膜单元23及复合量子点彩膜单元24对应发红、绿、蓝及白光，实现了量子点显示面板的全彩色显示，每个量子点彩膜单元独立发光，无需滤光片滤光，还提高了显示面板的发光效率，由于增加复合量子点彩膜单元24还提高了显示面板的亮度。同时复合量子点彩膜单眼24叠层设置提高了显示面板发出白光的发光效率，另外，靠近紫外背光模组一侧叠层设置的红色量子点彩膜单元21、绿色量子点彩膜单元22及蓝色量子点彩膜单元23，可以减少长波长量子点彩膜单元(红色量子点彩膜单元21)对短波长量子点彩膜单元(绿色量子点彩膜单元22、蓝色量子点彩膜单元23)发射光的再吸收，提高了显示面板的发光效率。
S220、在量子点彩膜结构20背离背光模组10的一侧形成第一反射层30。
S221、在背光模组10背离量子点彩膜结构20一侧形成第二反射层40。
或者，参照图9-图21同样的光刻工艺，背光模组10为紫外光背光模组，采用光刻的方法制备量子点彩膜结构20，其中，复合量子点彩膜单元24与绿色量子点彩膜单元22在同一光刻工艺中完成；该量子点彩膜结构20的制备工艺为：
提供第一量子点基材；采用第一掩膜版在第一量子点基材上形成多个第一凹槽结构；向部分多个第一凹槽结构内填充红色量子点光刻胶形成红色量子点彩膜单元21；向其余部分第一凹槽结构内填充依次叠层设置的红色量子点光刻胶、绿色量子点光刻胶及蓝色量子点光刻胶形成复合量子点彩膜单元24；提供第二量子点基材；第二量子点基材位于红色量子点彩膜单元21背离背光模组10一侧；采用第二掩膜版在第二量子点基材上形成多个第二凹槽结构；向第二凹槽结构内填充绿色量子点光刻胶形成绿色量子点彩膜单元22；提供第三量子点基材；第三量子点基材位于绿色量子点彩膜单元22背离红色量子点彩膜单元21 一侧；采用第三掩膜版在第三量子点基材上形成多个第三凹槽结构；向多个第三凹槽结构内填充蓝色量子点光刻胶形成蓝色量子点彩膜单元23。
或者，参照图9-图21同样的光刻工艺，背光模组10为紫外光背光模组，采用光刻的方法制备量子点彩膜结构20，其中，复合量子点彩膜单元24中红色量子点彩膜子单元241与红色量子点彩膜单元21在同一光刻工艺中完成，绿色量子点彩膜子单元242与绿色量子点彩膜单元22在同一光刻工艺中完成，蓝色量子点彩膜子单元243与蓝色量子点彩膜单元23在同一光刻工艺中完成以形成复合量子点彩膜单元24；该量子点彩膜结构20的制备工艺为：
提供第一量子点基材；采用第一掩膜版在第一量子点基材上形成多个第一凹槽结构；向部分多个第一凹槽结构内填充红色量子点光刻胶形成红色量子点彩膜单元21；向其余部分第一凹槽结构内填充红色量子点光刻胶形成复合量子点彩膜单元24中的红色量子点彩膜子单元241；提供第二量子点基材；第二量子点基材位于红色量子点彩膜单元21背离背光模组10一侧；采用第二掩膜版在第二量子点基材上形成多个第二凹槽结构；向部分第二凹槽结构内填充绿色量子点光刻胶形成绿色量子点彩膜单元22；向其余部分多个第二凹槽结构内填充绿色量子点光刻胶形成复合量子点彩膜单元24中绿色量子点彩膜子单元242；提供第三量子点基材；第三量子点基材位于绿色量子点彩膜单元22背离红色量子点彩膜单元21一侧；采用第三掩膜版在第三量子点基材上形成多个第三凹槽结构；向部分第三凹槽结构内填充蓝色量子点光刻胶形成蓝色量子点彩膜单元23；向其余部分多个第二凹槽结构内填充蓝色量子点光刻胶形成复合量子点彩膜单元24中蓝色量子点彩膜子单元243；其中，红色量子点彩膜子单元241、绿色量子点彩膜子单元242及蓝色量子点彩膜子单元243在第一量子点基材的投影交叠。
可选的，背光模组10为蓝光背光模组，基于同样的光刻工艺制备量子点彩膜结构20，其中，复合量子点彩膜单元24与红色量子点彩膜单元21在同一光刻工艺中制备，量子点彩膜结构20包括：
提供第一量子点基材；采用第一掩膜版在第一量子点基材上形成多个第一凹槽结构；向多个第一凹槽结构内填充红色量子点光刻胶形成红色量子点彩膜单元21；提供第二量子点基材；第二量子点基材位于红色量子点彩膜单元21背离背光模组10一侧；采用第二掩膜版在第二量子点基材上形成多个第二凹槽结构；向部分第二凹槽结构内填充绿色量子点光刻胶形成绿色量子点彩膜单元22；向其余部分第二凹槽结构内填充依次叠层设置的红色量子点光刻胶、绿色量子点光刻胶及蓝色量子点光刻胶形成复合量子点彩膜单元24。
或者，背光模组10为蓝光背光模组，基于同样的光刻工艺制备量子点彩膜 结构20，其中，复合量子点彩膜单元24与绿色量子点彩膜单元22在同一光刻工艺中制备，量子点彩膜结构20包括：
提供第一量子点基材；采用第一掩膜版在第一量子点基材上形成多个第一凹槽结构；向部分多个第一凹槽结构内填充红色量子点光刻胶形成红色量子点彩膜单元21；向其余部分第一凹槽结构内填充依次叠层设置的红色量子点光刻胶、绿色量子点光刻胶及蓝色量子点光刻胶形成复合量子点彩膜单元24；提供第二量子点基材；第二量子点基材位于红色量子点彩膜单元21背离背光模组10一侧；采用第二掩膜版在第二量子点基材上形成多个第二凹槽结构；向第二凹槽结构内填充绿色量子点光刻胶形成绿色量子点彩膜单元22。
或者，背光模组10为蓝光背光模组，基于同样的光刻工艺制备量子点彩膜结构20，其中，复合量子点彩膜单元24中红色量子点彩膜子单元241与红色量子点彩膜单元21同一光刻工艺中完成，绿色量子点彩膜子单元242与绿色量子点彩膜单元22同一光刻工艺中完成以形成复合量子点彩膜单元24，量子点彩膜结构20包括：
提供第一量子点基材；采用第一掩膜版在第一量子点基材上形成多个第一凹槽结构；向部分多个第一凹槽结构内填充红色量子点光刻胶形成红色量子点彩膜单元21；向其余部分第一凹槽结构内填充红色量子点光刻胶形成复合量子点彩膜单元24中的红色量子点彩膜子单元241；提供第二量子点基材；第二量子点基材位于红色量子点彩膜单元21背离背光模组10一侧；采用第二掩膜版在第二量子点基材上形成多个第二凹槽结构；向部分第二凹槽结构内填充绿色量子点光刻胶形成绿色量子点彩膜单元22；向其余部分多个第二凹槽结构内填充绿色量子点光刻胶形成复合量子点彩膜单元24中绿色量子点彩膜子单元242；其中，红色量子点彩膜子单元241及绿色量子点彩膜子单元242在第一量子点基材的投影交叠。
背光模组10为蓝光背光模组时，同样的复合量子点彩膜单元24叠层设置，如此避免了长波长(红)量子点彩膜子单元对短波长(绿)量子点彩膜子单元发射光的再吸收，这样提高了蓝光背光模组激发复合量子点彩膜单元24发出白光的发光效率，提高了显示面板的发光效率。
本申请实施例还提供了一种量子点显示装置，该显示装置包括上述任一实施例提供的量子点显示面板，因此，本申请实施例提供的量子点显示装置具有上述任一实施例中的技术方案所具有的技术效果，这里不再赘述。

Claims (10)

  1. 一种量子点显示面板，包括：
    背光模组；
    量子点彩膜结构，位于所述背光模组出光面的一侧；所述量子点彩膜结构至少包括红色量子点彩膜单元、绿色量子点彩膜单元和复合量子点彩膜单元；
    其中，所述红色量子点彩膜单元和所述绿色量子点彩膜单元叠层设置，所述红色量子点彩膜单元较所述绿色量子点彩膜单元靠近所述背光模组的一侧，且所述红色量子点彩膜单元、所述绿色量子点彩膜单元和所述复合量子点彩膜单元两两互不交叠；所述复合量子点彩膜单元至少包括叠层设置的红色量子点彩膜子单元和绿色量子点彩膜子单元；所述红色量子点彩膜子单元较所述绿色量子点彩膜子单元靠近所述背光模组一侧；
    第一反射层，设置于所述量子点彩膜结构背离所述背光模组的一侧，所述第一反射层覆盖所述红色量子点彩膜单元和所述绿色量子点彩膜单元；
    第二反射层，设置于所述背光模组背离所述量子点彩膜结构一侧，所述第二反射层覆盖所述量子点彩膜结构。
  2. 根据权利要求1所述的量子点显示面板，其中，所述复合量子点彩膜单元与所述红色量子点彩膜单元，或者与所述绿色量子点彩膜单元同层设置；或者，所述复合量子点彩膜单元中至少所述红色量子点彩膜子单元与所述红色量子点彩膜单元同层设置，且至少所述绿色量子点彩膜子单元与所述绿色量子点彩膜单元同层设置。
  3. 根据权利要求2所述的量子点显示面板，其中，所述背光模组包括紫外光背光模组；
    所述量子点彩膜结构还包括蓝色量子点彩膜单元；所述红色量子点彩膜单元、所述绿色量子点彩膜单元和所述蓝色量子点彩膜单元叠层设置，所述红色量子点彩膜单元较所述绿色量子点彩膜单元和所述蓝色量子点彩膜单元靠近所述背光模组的一侧，且所述红色量子点彩膜单元、绿色量子点彩膜单元、所述蓝色量子点彩膜单元和所述复合量子点彩膜单元两两互不交叠；
    所述复合量子点彩膜单元还包括与所述红色量子点彩膜子单元以及所述绿色量子点彩膜子单元叠层设置的蓝色量子点彩膜子单元；所述红色量子点彩膜子单元较所述绿色量子点彩膜子单元和所述蓝色量子点彩膜子单元靠近所述背光模组一侧；
    所述复合量子点彩膜单元与所述红色量子点彩膜单元，或者与所述绿色量子点彩膜单元同层设置；或者，所述复合量子点彩膜单元中所述红色量子点彩 膜子单元与所述红色量子点彩膜单元同层设置，且所述绿色量子点彩膜子单元与所述绿色量子点彩膜单元同层设置，且所述蓝色量子点彩膜子单元与所述蓝色量子点彩膜单元同层设置。
  4. 根据权利要求3所述的量子点显示面板，其中，所述红色量子点彩膜单元包括多个红光子像素，所述绿色量子点彩膜单元包括多个绿光子像素，所述蓝色量子点彩膜单元包括多个蓝光子像素，所述复合量子点彩膜单元包括多个白光子像素；每相邻的红光子像素、绿光子像素、蓝光子像素及白光子像素形成一像素单元；
    所述量子点显示面板还包括遮光挡墙，相邻的像素单元之间设置有所述遮光挡墙。
  5. 根据权利要求2所述的量子点显示面板，其中，所述背光模组包括蓝光背光模组。
  6. 根据权利要求5所述的量子点显示面板，其中，所述量子点彩膜结构还包括蓝光透光区；
    所述红色量子点彩膜单元包括多个红光子像素，所述绿色量子点彩膜单元包括多个绿光子像素，所述蓝光透光区包括多个蓝光子像素，所述复合量子点彩膜单元包括多个白光子像素；每相邻的红光子像素、绿光子像素、蓝光子像素及白光子像素形成一像素单元；
    所述量子点显示面板还包括遮光挡墙，相邻的像素单元之间设置有所述遮光挡墙。
  7. 一种量子点显示面板的制备方法，包括：
    提供背光模组；
    制备量子点彩膜结构；其中，所述量子点彩膜结构位于所述背光模组出光面的一侧；所述量子点彩膜结构至少包括红色量子点彩膜单元、绿色量子点彩膜单元和复合量子点彩膜单元；所述红色量子点彩膜单元和所述绿色量子点彩膜单元叠层设置，所述红色量子点彩膜单元较所述绿色量子点彩膜单元靠近所述背光模组的一侧，且所述红色量子点彩膜单元、所述绿色量子点彩膜单元和所述复合量子点彩膜单元两两互不交叠；所述复合量子点彩膜单元至少包括叠层设置的红色量子点彩膜子单元和绿色量子点彩膜子单元；所述红色量子点彩膜子单元较所述绿色量子点彩膜子单元靠近所述背光模组一侧；
    在所述量子点彩膜结构背离所述背光模组的一侧形成第一反射层，其中，所述第一反射层覆盖所述红色量子点彩膜单元和所述绿色量子点彩膜单元；
    在所述背光模组背离所述量子点彩膜结构一侧形成第二反射层，其中，所述第二反射层覆盖所述量子点彩膜结构。
  8. 根据权利要求7所述的方法，其中，所述背光模组包括紫外光背光模组；
    所述制备量子点彩膜结构包括：
    提供第一量子点基材；
    采用第一掩膜版在所述第一量子点基材上形成多个第一凹槽结构；
    向所述多个第一凹槽结构内填充红色量子点光刻胶形成所述红色量子点彩膜单元；
    提供第二量子点基材；其中，所述第二量子点基材位于所述红色量子点彩膜单元背离所述背光模组一侧；
    采用第二掩膜版在所述第二量子点基材上形成多个第二凹槽结构；
    向部分第二凹槽结构内填充绿色量子点光刻胶形成所述绿色量子点彩膜单元；向其余部分第二凹槽结构内填充依次叠层设置的红色量子点光刻胶、绿色量子点光刻胶及蓝色量子点光刻胶形成所述复合量子点彩膜单元；
    提供第三量子点基材；其中，所述第三量子点基材位于所述绿色量子点彩膜单元背离所述红色量子点彩膜单元一侧；
    采用第三掩膜版在所述第三量子点基材上形成多个第三凹槽结构；
    向所述多个第三凹槽结构内填充蓝色量子点光刻胶形成蓝色量子点彩膜单元；
    或者，
    提供第一量子点基材；
    采用第一掩膜版在所述第一量子点基材上形成多个第一凹槽结构；
    向部分第一凹槽结构内填充红色量子点光刻胶形成所述红色量子点彩膜单元；向其余部分第一凹槽结构内填充依次叠层设置的红色量子点光刻胶、绿色量子点光刻胶及蓝色量子点光刻胶形成所述复合量子点彩膜单元；
    提供第二量子点基材；其中，所述第二量子点基材位于所述红色量子点彩膜单元背离所述背光模组一侧；
    采用第二掩膜版在所述第二量子点基材上形成多个第二凹槽结构；
    向所述多个第二凹槽结构内填充绿色量子点光刻胶形成所述绿色量子点彩膜单元；
    提供第三量子点基材；其中，所述第三量子点基材位于所述绿色量子点彩膜单元背离所述红色量子点彩膜单元一侧；
    采用第三掩膜版在所述第三量子点基材上形成多个第三凹槽结构；
    向所述多个第三凹槽结构内填充蓝色量子点光刻胶形成蓝色量子点彩膜单元；
    或者，
    提供第一量子点基材；
    采用第一掩膜版在所述第一量子点基材上形成多个第一凹槽结构；
    向部分第一凹槽结构内填充红色量子点光刻胶形成所述红色量子点彩膜单元；向其余部分第一凹槽结构内填充红色量子点光刻胶形成所述复合量子点彩膜单元中的红色量子点彩膜子单元；
    提供第二量子点基材；其中，所述第二量子点基材位于所述红色量子点彩膜单元背离所述背光模组一侧；
    采用第二掩膜版在所述第二量子点基材上形成多个第二凹槽结构；
    向部分第二凹槽结构内填充绿色量子点光刻胶形成所述绿色量子点彩膜单元；向其余部分第二凹槽结构内填充绿色量子点光刻胶形成所述复合量子点彩膜单元中绿色量子点彩膜子单元；
    提供第三量子点基材；其中，所述第三量子点基材位于所述绿色量子点彩膜单元背离所述红色量子点彩膜单元一侧；
    采用第三掩膜版在所述第三量子点基材上形成多个第三凹槽结构；
    向部分第三凹槽结构内填充蓝色量子点光刻胶形成蓝色量子点彩膜单元；向其余部分第二凹槽结构内填充蓝色量子点光刻胶形成所述复合量子点彩膜单元中蓝色量子点彩膜子单元；
    其中，所述红色量子点彩膜子单元、所述绿色量子点彩膜子单元及所述蓝色量子点彩膜子单元在所述第一量子点基材的投影交叠。
  9. 根据权利要求7所述的方法，其中，所述背光模组包括蓝光背光模组；
    所述制备量子点彩膜结构包括：
    提供第一量子点基材；
    采用第一掩膜版在所述第一量子点基材上形成多个第一凹槽结构；
    向所述多个第一凹槽结构内填充红色量子点光刻胶形成所述红色量子点彩 膜单元；
    提供第二量子点基材；其中，所述第二量子点基材位于所述红色量子点彩膜单元背离所述背光模组一侧；
    采用第二掩膜版在所述第二量子点基材上形成多个第二凹槽结构；
    向部分第二凹槽结构内填充绿色量子点光刻胶形成所述绿色量子点彩膜单元；向其余部分第二凹槽结构内填充依次叠层设置的红色量子点光刻胶、绿色量子点光刻胶及蓝色量子点光刻胶形成所述复合量子点彩膜单元；
    或者，
    提供第一量子点基材；
    采用第一掩膜版在所述第一量子点基材上形成多个第一凹槽结构；
    向部分第一凹槽结构内填充红色量子点光刻胶形成所述红色量子点彩膜单元；向其余部分第一凹槽结构内填充依次叠层设置的红色量子点光刻胶、绿色量子点光刻胶及蓝色量子点光刻胶形成所述复合量子点彩膜单元；
    提供第二量子点基材；其中，所述第二量子点基材位于所述红色量子点彩膜单元背离所述背光模组一侧；
    采用第二掩膜版在所述第二量子点基材上形成多个第二凹槽结构；
    向所述多个第二凹槽结构内填充绿色量子点光刻胶形成所述绿色量子点彩膜单元；
    或者，
    提供第一量子点基材；
    采用第一掩膜版在所述第一量子点基材上形成多个第一凹槽结构；
    向部分第一凹槽结构内填充红色量子点光刻胶形成所述红色量子点彩膜单元；向其余部分第一凹槽结构内填充红色量子点光刻胶形成所述复合量子点彩膜单元中的红色量子点彩膜子单元；
    提供第二量子点基材；其中，所述第二量子点基材位于所述红色量子点彩膜单元背离所述背光模组一侧；
    采用第二掩膜版在所述第二量子点基材上形成多个第二凹槽结构；
    向部分第二凹槽结构内填充绿色量子点光刻胶形成绿色量子点彩膜单元；向其余部分第二凹槽结构内填充绿色量子点光刻胶形成所述复合量子点彩膜单元中绿色量子点彩膜子单元；
    其中，所述红色量子点彩膜子单元及所述绿色量子点彩膜子单元在所述第一量子点基材的投影交叠。
  10. 一种显示装置，包括权利要求1-6任一项所述的量子点显示面板。
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