WO2022122013A1 - Led支架、发光单元及发光组件 - Google Patents

Led支架、发光单元及发光组件 Download PDF

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Publication number
WO2022122013A1
WO2022122013A1 PCT/CN2021/137073 CN2021137073W WO2022122013A1 WO 2022122013 A1 WO2022122013 A1 WO 2022122013A1 CN 2021137073 W CN2021137073 W CN 2021137073W WO 2022122013 A1 WO2022122013 A1 WO 2022122013A1
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WO
WIPO (PCT)
Prior art keywords
light
substrate
conductive
layer
led
Prior art date
Application number
PCT/CN2021/137073
Other languages
English (en)
French (fr)
Inventor
谭镇良
邢美正
施华平
孙平如
梁世飞
杨丽敏
柯有谱
何刚
黎明权
许辉
李运华
王传虎
刘会萍
宋均楠
许文钦
高四清
谭青青
王东东
张志强
李金虎
Original Assignee
深圳市聚飞光电股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202023003674.7U external-priority patent/CN214481871U/zh
Priority claimed from CN202023005249.1U external-priority patent/CN214012964U/zh
Priority claimed from CN202011641293.3A external-priority patent/CN112687669A/zh
Priority claimed from CN202011639540.6A external-priority patent/CN112687668A/zh
Priority claimed from CN202120148167.8U external-priority patent/CN214099645U/zh
Priority claimed from CN202120216659.6U external-priority patent/CN214619093U/zh
Priority claimed from CN202110323230.1A external-priority patent/CN113097373A/zh
Priority claimed from CN202110365627.7A external-priority patent/CN113036022A/zh
Priority claimed from CN202110665700.2A external-priority patent/CN113257980A/zh
Priority claimed from CN202121528970.0U external-priority patent/CN216120345U/zh
Priority to JP2023535480A priority Critical patent/JP7538389B2/ja
Priority to EP21902718.2A priority patent/EP4261904A1/en
Priority to US18/266,298 priority patent/US20240047623A1/en
Priority to KR1020237020528A priority patent/KR20230107347A/ko
Application filed by 深圳市聚飞光电股份有限公司 filed Critical 深圳市聚飞光电股份有限公司
Publication of WO2022122013A1 publication Critical patent/WO2022122013A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • This application relates to LEDs (Light Emitting Diode, LED chip) field, especially relates to an LED bracket, a light-emitting unit and a light-emitting component.
  • LEDs Light Emitting Diode, LED chip
  • the SMD LED has a wide range of applications in lighting, decoration, backlight, display and other fields.
  • the SMD LED includes an LED bracket and an LED chip arranged on the LED bracket.
  • the LED bracket of the existing SMD LED generally includes a substrate, and a package body disposed on the substrate, and the package body is formed with a cup for accommodating the LED chip.
  • the strength of the side wall of the bowl of the existing LED bracket is not high, and is easily broken due to the influence of external forces such as plate deformation.
  • the purpose of the present application is to provide an LED bracket, a light-emitting unit and a light-emitting assembly, aiming to solve the problem in the related art that the strength of the LED bracket is not high and is easily broken by external force.
  • An LED support includes a package body and a substrate partially covered by the package body, the package body is formed with a bowl, and a part of the substrate is located in the bowl as the bottom of the bowl; the substrate Including two conductive areas located in the bowl, and an insulating area for insulating and isolating the two conductive areas is arranged between the two conductive areas;
  • the substrate includes a substrate body extending from the substrate body to a support portion in the side wall of the bowl, the support portion in the side wall from one of the conductive regions to the other of the conductive regions extending, and at least to the sidewall region corresponding to the insulating region on the sidewall.
  • the present application also provides a light-emitting unit, comprising an LED chip, and the above-mentioned LED bracket, the LED chip is arranged at the bottom of the bowl, and the positive and negative electrodes of the LED chip are respectively electrically connected to the two conductive regions;
  • the light-emitting unit further includes an encapsulation layer disposed in the bowl.
  • the present application also provides a light-emitting assembly, the light-emitting assembly includes a circuit board and the above-mentioned light-emitting unit, the light-emitting unit is arranged on the circuit board and is electrically connected to the circuit board .
  • the present application provides an LED bracket, a light-emitting unit and a light-emitting assembly, wherein the substrate of the LED bracket includes a substrate body, and a support portion extending from the substrate body to the side wall of the bowl of the LED bracket, and the side of the bowl is lifted by the support portion
  • the strength of the wall can improve the overall strength of the LED bracket; in addition, the support portion extends from one conductive area of the LED bracket to the other conductive area in the side wall of the cup, and extends at least to insulate and isolate the two conductive areas.
  • the insulating area corresponds to the side wall area on the side wall, that is, the support portion extends to the area between the two areas where the two conductive areas are projected on the side wall of the bowl, and this part of the area is the strength of the LED bracket
  • the weakest area, the support part extends to this area, which can further improve the strength of the LED bracket, especially the weakest part of the LED bracket can be strongly reinforced, which can avoid the LED bracket being broken by external force to the greatest extent. situation happens.
  • the light-emitting unit and light-emitting assembly provided by the present application use LED brackets with better strength, so the overall strength and reliability of the light-emitting unit and light-emitting assembly can be improved.
  • FIG. 1 is a top view 1 of the LED bracket provided in the first embodiment of the application;
  • FIG. 2 is a second top view of the LED bracket provided in the first embodiment of the application.
  • FIG. 3 is a top view three of the LED bracket provided in the first embodiment of the application.
  • FIG. 4 is a top view four of the LED bracket provided in the first embodiment of the application.
  • Fig. 5 is the A-A sectional view of the LED bracket in Fig. 4;
  • FIG. 6 is a top view 5 of the LED bracket provided in the first embodiment of the present application.
  • FIG. 7 is a schematic diagram 1 of the structure of the LED bracket provided in the second embodiment of the present application.
  • FIG. 8 is a second schematic structural diagram of an LED bracket provided in the second embodiment of the present application.
  • FIG. 9 is a schematic diagram 3 of the structure of the LED bracket provided in the second embodiment of the present application.
  • FIG. 10 is a first structural schematic diagram of the first groove provided in the second embodiment of the application.
  • FIG. 11 is a second structural schematic diagram of the first groove provided in the second embodiment of the application.
  • FIG. 12 is a third structural schematic diagram of the first groove provided in the second embodiment of the application.
  • FIG. 13 is a fourth schematic structural diagram of the LED bracket provided in the second embodiment of the application.
  • FIG. 14 is a schematic diagram 5 of the structure of the LED bracket provided in the second embodiment of the application.
  • FIG. 15 is a schematic structural diagram of the light-emitting assembly provided in the second embodiment of the present application.
  • FIG. 16 is a schematic diagram 1 of the structure of the LED bracket provided in the third embodiment of the application.
  • FIG. 17 is a second schematic diagram of the structure of the LED bracket provided in the third embodiment of the application.
  • FIG. 18 is a schematic diagram three of the structure of the LED bracket provided in the third embodiment of the present application.
  • FIG. 19 is a fourth schematic diagram of the structure of the LED bracket provided in the third embodiment of the application.
  • FIG. 20 is a schematic diagram 5 of the structure of the LED bracket provided in the third embodiment of the application.
  • FIG. 21 is a schematic structural diagram of a light-emitting unit provided in Embodiment 3 of the present application.
  • FIG. 22 is a first structural schematic diagram of the substrate of the LED support provided in the fourth embodiment of the application.
  • FIG. 23 is a second structural schematic diagram of the substrate of the LED support provided in the fourth embodiment of the application.
  • FIG. 24 is a third structural schematic diagram of the substrate of the LED support provided in the fourth embodiment of the application.
  • FIG. 25 is a schematic structural diagram of a light-emitting unit provided in Embodiment 4 of the present application.
  • FIG. 26 is a schematic diagram 1 of the structure of the LED bracket provided in the fifth embodiment of the present application.
  • FIG. 27 is a second schematic structural diagram of an LED bracket provided in Embodiment 5 of the present application.
  • FIG. 28 is a schematic diagram three of the structure of the LED bracket provided in the fifth embodiment of the present application.
  • FIG. 29 is a top view 1 of the LED bracket provided by the fifth embodiment of the application.
  • FIG. 30 is a second top view of the LED bracket provided by the fifth embodiment of the application.
  • 31 is a third top view of the LED bracket provided in the fifth embodiment of the application.
  • FIG. 32 is the fourth schematic diagram of the structure of the LED bracket provided in the fifth embodiment of the application.
  • FIG. 33 is a schematic structural diagram of a light-emitting unit provided in Embodiment 5 of the present application.
  • FIG. 34 is a schematic diagram 1 of an existing normalized spectrogram provided by Embodiment 6 of the present application.
  • FIG. 35 is a schematic diagram 2 of an existing normalized spectrogram provided by Embodiment 6 of the present application.
  • FIG. 36 is a schematic structural diagram 1 of a light-emitting unit provided in Embodiment 6 of the present application.
  • Figure 37 is a top view of the light emitting unit in Figure 36;
  • Example 38 is a schematic diagram 1 of an improved normalized spectrogram provided by Example 6 of the present application.
  • FIG. 39 is a second schematic structural diagram of a light-emitting unit provided in Embodiment 6 of the present application.
  • Figure 40 is a top view of the light emitting unit in Figure 39;
  • 41 is a schematic diagram 2 of an improved normalized spectrogram provided by Example 6 of the present application.
  • FIG. 42 is a schematic structural diagram 1 of a light-emitting unit provided in Embodiment 7 of the present application.
  • FIG. 43 is a second schematic structural diagram of a light-emitting unit provided in Embodiment 7 of the present application.
  • FIG. 44 is a third schematic structural diagram of a light-emitting unit provided in Embodiment 7 of the present application.
  • FIG. 45 is a fourth schematic structural diagram of a light-emitting unit provided in Embodiment 7 of the present application.
  • FIG. 46 is a fifth structural schematic diagram of a light-emitting unit provided in Embodiment 7 of the present application.
  • FIG. 47 is a schematic diagram of the sawtooth structure on the upper surface of the LED bracket provided in Embodiment 7 of the present application.
  • FIG. 48 is a sixth schematic structural diagram of a light-emitting unit provided in Embodiment 7 of the present application.
  • FIG. 49 is a schematic structural diagram 1 of the circuit board provided in Embodiment 8 of the present application.
  • FIG. 51 is a schematic structural diagram of the light-emitting assembly provided in Embodiment 8 of the present application.
  • FIG. 52 is a schematic diagram of a bending state of an electronic device provided in Embodiment 8 of the present application.
  • FIG. 53 is a schematic structural diagram of an electronic device provided in Embodiment 8 of the present application.
  • FIG. 54 is a second schematic structural diagram of the circuit board provided by the ninth embodiment of the present application.
  • FIG. 55 is a schematic structural diagram 1 of the light emitting assembly provided in the ninth embodiment of the present application.
  • FIG. 56 is a second schematic structural diagram of the light-emitting assembly provided in the ninth embodiment of the present application.
  • FIG. 57 is a third schematic structural diagram of the light-emitting assembly provided in the ninth embodiment of the present application.
  • FIG. 58 is a fourth schematic structural diagram of the light-emitting assembly provided in the ninth embodiment of the present application.
  • FIG. 59 is a fifth schematic structural diagram of the light-emitting assembly provided in the ninth embodiment of the present application.
  • FIG. 60 is a schematic structural diagram of a heat dissipation fin provided in Embodiment 9 of the present application.
  • orientation or positional relationship indicated by the terms “upper”, “lower”, “inner”, “middle”, “outer”, “front”, “rear”, etc. is based on the orientation or position shown in the drawings relation. These terms are primarily used to better describe the present application and its embodiments, and are not intended to limit the fact that the indicated device, element, or component must have a particular orientation, or be constructed and operated in a particular orientation. In addition, some of the above-mentioned terms may be used to express other meanings besides orientation or positional relationship. For example, the term “on” may also be used to express a certain attachment or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in the present application can be understood according to specific situations.
  • connection may be a fixed connection, a detachable connection, or a unitary construction; it may be a mechanical connection, or an electrical connection; it may be a direct connection, or an indirect connection through an intermediary, or two devices, elements or Internal connectivity between components.
  • connection may be a fixed connection, a detachable connection, or a unitary construction; it may be a mechanical connection, or an electrical connection; it may be a direct connection, or an indirect connection through an intermediary, or two devices, elements or Internal connectivity between components.
  • the LED bracket includes a package body and a substrate partially covered by the package body, the package body is formed with a bowl, a part of the substrate is located in the bowl as the bottom of the bowl; the substrate includes two conductive areas located in the bowl, and the two There is an insulating area between the conductive areas to insulate the two; the substrate includes a substrate main body, which extends from the substrate main body to a support part in the side wall of the bowl, through which the strength of the side wall of the bowl is improved, thereby improving The overall strength of the LED bracket; in this embodiment, the support portion extends from one conductive area to the other conductive area in the side wall, and at least extends to the side wall area corresponding to the insulating area on the side wall; and this part of the side wall
  • the area is usually the area where the strength of the LED bracket is the weakest
  • the package body can be formed by, but not limited to, various resins and other materials on the substrate by methods including but not limited to injection molding, casting, molding, and the like.
  • the cups formed by the package body are used for accommodating the LED chips.
  • the cross-sectional shape of the cup can be set flexibly, for example, it can be set to but not limited to regular shapes such as rectangle, circle, racetrack, ellipse, trapezoid, etc., and it can also be set to irregular shape according to requirements, which will not be repeated here. Repeat them one by one.
  • the material of the substrate body may be but not limited to insulating materials, such as resin, ceramics, etc.
  • the substrate may include only one, and the two conductive regions in this example may be provided on the same substrate body; It can include two sub-substrates, in which case the two conductive regions can be respectively provided on the substrate bodies of the two sub-substrates; the conductive regions in this example can be formed by disposing corresponding conductive layers on the substrate body to form conductive regions, and the conductive regions are conductive. The layers are isolated by insulating regions.
  • the material of the substrate body may be a conductive material, such as conductive metal
  • the substrate may include two sub-substrates.
  • the two sub-substrates are insulated and isolated by an insulating region, and the regions of the two sub-substrates located in the bowl constitute two conductive sub-substrates, respectively. Area.
  • the substrate may include two sub-substrates, and one of the sub-substrates is made of a conductive material, and the other sub-substrate is made of an insulating material.
  • the insulating region may include, but is not limited to, a gap provided between the two conductive regions to insulate the two, and may also include an insulating material provided between the two conductive regions, such as but not limited to various insulating materials. glue or insulating resin, etc.
  • the insulating area close to the opening of the bowl can be higher than the side of the at least one conductive area close to the opening of the bowl, or lower than the side of the at least one conductive area close to the opening of the bowl, or the same as the at least one conductive area close to the opening of the bowl.
  • One side of the cup opening is set flush, which can be flexibly set according to various needs to improve its versatility.
  • an integral molding structure can be provided between the support portion and the substrate main body, so that the structure of the LED bracket can be simplified, and the integration degree and strength thereof can be improved.
  • the two can also be configured as non-integrated structures.
  • the number and specific positions of the support parts can be flexibly set according to the application requirements.
  • the substrate includes two sub-substrates that are insulated and isolated by insulating regions, and the two sub-substrates are located in the bowl and cup respectively. Two conductive regions are illustrated as an example.
  • the supporting portion may include a supporting portion extending from the substrate main body of one of the sub-substrates into the side wall of the bowl, or extending from opposite sides of the substrate main body of one of the sub-substrates to opposite sides of the bowl, respectively.
  • the two sub-substrates are respectively referred to as a first sub-substrate and a second sub-substrate
  • the two conductive regions are respectively referred to as a first conductive region and a second conductive region.
  • the package body is subjected to perspective treatment in the accompanying drawings, and the attached view of the top view is presented.
  • the shaded part in the figure is the top of the sidewall; wherein, the first sub-substrate 11 has a larger area, the second sub-substrate 12 has a smaller area and is separated from the first sub-substrate 11 by an insulating region 13 .
  • the first sub-substrate 11 has a smaller area.
  • the second sub-substrate 12 are partially covered by the package body 10 .
  • the first sub-substrate 11 includes a support portion 14 extending from the substrate body thereof, the support portion 14 extends from the substrate body of the first sub-substrate 11 into the side wall of the bowl, and extends from the side wall from the side wall of the cup to the side wall of the cup.
  • the first conductive region D1 corresponds to the second region T2 of the sidewall, extends to the third region T3 of the second conductive region D2 corresponding to the sidewall, and at least extends to the corresponding sidewall of the insulating region 13 on the sidewall area, that is, the first area T1 in FIG. 1 ; thus, a strong reinforcement is formed for the weakest part of the LED bracket, and the situation that the LED bracket is broken by external force is avoided to the greatest extent.
  • the support portion 14 may pass through the first region T1 and extend into the second region T2, as shown in FIG. 4, for example, and the support portion 14 may not extend into the second region T2, for example, see FIG. 1 to FIG. 3 Support 14 shown in .
  • the support portion 14 may be entirely covered by the package body 10 , that is, the entirety may extend into the sidewall, or only a portion may be covered by the package body 10 (for example, as shown in FIG. 2 ) .
  • the side of the support portion 14 close to the cup opening can be flush with the side of the base plate body close to the cup opening, that is, the two can be on the same plane; or the side of the support portion 14 close to the cup opening and the base plate body The side near the opening of the bowl is not in the same plane.
  • the side of the support portion 14 close to the cup opening can be set higher than the side of the base plate body close to the cup opening, that is, the support portion 14 can be set to protrude from the height direction of the base plate body (ie, the direction close to the cup opening), in other words, The support portion 14 extends toward the mouth of the bowl in the side wall, so as to further enhance the overall strength of the side wall; in particular, when the LED bracket is subjected to external force from bottom to top caused by plate deformation, the side wall can be further reduced possibility of breaking.
  • the first region T1 on the sidewall corresponding to the insulating region 13 in this example refers to the region on the sidewall corresponding to the part of the region where the insulating region 13 contacts the sidewall.
  • the extension direction of the insulating region 13 and the support portion 14 have an intersecting portion, and the support portion 14 of this portion is not on the same plane as the substrate body, forming a three-dimensional reinforcement structure to ensure the strength of the sidewall .
  • the plate of the insulating area 13 is more easily deformed, and the support portion 14 enters the first area T1, which better strengthens the weaker part of the side wall of the LED bracket.
  • the support portion 14 may also include a portion extending in a direction away from the second conductive region D2, so as to strengthen the sidewalls of other portions.
  • the support portion 14 may directly extend upward from the side of the substrate body, or may extend horizontally from the side of the substrate body for a certain distance and then extend upward.
  • the support portion 14 may include a vertical upward protrusion, and may also include an oblique upward protrusion.
  • a support portion 14 with a rectangular cross-section directly extends from a position near the top of the side of the substrate body.
  • the thickness of the support portion 14 can be set to be smaller than that of the substrate body.
  • the support portion 14 It is extended along the substrate main body of the first sub-substrate 11 toward the direction of the second sub-substrate 12 , and enters the first region T1 .
  • the shape of the support portion 14 in this example can be set as required, for example, including but not limited to half-C-shape (see FIG. 3 ), inverted L-shape, etc., or other shapes or combinations of shapes, such as the half-C shape shown in FIG. 1 .
  • the support portion extends from one side of the substrate main body of one of the sub-substrates.
  • the LED bracket may also include two supporting portions extending from opposite sides of the substrate main body of one of the sub-substrates to two opposite side walls of the bowl, or from opposite sides of the substrate main body.
  • the two sides of the base plate and the other areas covered by the package body of the substrate body respectively extend to the three support parts in the side wall of the bowl, so as to further improve the overall strength of the bracket.
  • FIG. 4 and FIG. 5 for an example. Compared with the examples in FIG. 1 to FIG.
  • the strength of the insulating region 3 in the LED bracket corresponding to the first region T1 on the side wall in the length direction is improved, that is, compared with the LED bracket shown in FIGS. 1-3 , the overall strength can be doubled.
  • the LED bracket may also include two support portions respectively extending from one side of the substrate main body of the two sub-substrates to the side walls of the bowl.
  • the LED bracket shown in FIG. 6 compared with the examples shown in FIGS. 1 to 3 , one side of the first sub-substrate 11 has a support portion 14 extending into one of the side walls of the bowl, and the second One side of the substrate body of the sub-substrate 12 also has a support portion 14 extending into the other side wall of the bowl, and the two support portions 14 are located in opposite sides of the bowl.
  • the number and position of the support parts 14 in this embodiment can be set flexibly and changeably, and the structure is simple, so as to meet the needs of various application scenarios.
  • the supporting portion 14 may be configured to include a first supporting body 141 connected to the substrate body and a second supporting body 142 extending from the first supporting body 141 . After the body 142 protrudes from the first support body 141 , it extends a certain distance to the second sub-substrate and enters the first region T1 corresponding to the insulating region.
  • the first support body 141 and the second support body 142 may be integrally formed.
  • the first support body 141 may only extend in a horizontal direction in a direction perpendicular to or not perpendicular to the side of the substrate body, and the second support body 142 protrudes from the first support body 141 in a height direction toward the second sub-base.
  • the substrate extends; it is also possible that the first support 141 protrudes to a certain height, and the second support 142 extends horizontally to the second sub-substrate after protruding from the first support 141; or the first support 141 and the second support 142 all protrude in the height direction, as long as at least a part of the second support body 142 entering the first region T1 is higher than the main body of the substrate.
  • the first support body 141 and the second support body 142 Through the two-stage support structure of the first support body 141 and the second support body 142, the strength of the side wall is strengthened, and the bonding force between the bracket and the package body is ensured.
  • the first support body can be provided The slope of the protrusion of 141 is gentler than that of the second support body 142, and the bonding force between the bracket and the package body is increased through the gentler first support body 141, so that the combination between the bracket and the package body is more stable, and it is not easy to be affected by external force. separation occurs.
  • FIG. 5 is a schematic cross-sectional view of the LED bracket shown in FIG. 4 along the line A-A thereof.
  • the first support body 141 of the support portion 14 also includes an arc-shaped connection area, that is, the portion of the support portion 14 close to the substrate body may be an arc-shaped portion 143 ; in this example, the arc-shaped portion 143 refers to the height direction of the support portion 14 .
  • the arc-shaped portion 143 makes a smooth transition between the support portion 14 and the substrate body, and can further increase the contact surface with the package body, which is beneficial to improve air tightness and is beneficial to The introduced water vapor spreads in the direction of the support, thereby reducing the risk of moisture inside the LED holder.
  • the support portion 14 in a cross section perpendicular to the side where the support portion 14 is provided, the support portion 14 extends away from the substrate body in the horizontal direction, and the extension direction of the end of the support portion 14 is between the substrate body and the substrate body.
  • the included angle ⁇ is greater than or equal to 90° and less than 180°, that is, the angle between the extension direction of the top end of the support portion 14 in the wall and the substrate body is greater than or equal to 90° and less than 180°, thereby reducing the molding of the LED bracket. difficulty.
  • the support portion 14 should be wrapped in the side wall of the package body. If the LED bracket includes two or more support parts 14 , the angles between the extension directions of the top ends of the two support parts 14 and the main body of the substrate can be set to be the same, so that the strengths on both sides of the LED bracket are more consistent.
  • the support portion 14 can be selected from a material with a hardness higher than that of the package body.
  • the package body can be made of a material such as plastic, and the support portion has a higher hardness than the plastic used.
  • the support portion 14 may be a metal material, a ceramic material, a high-strength resin material or other materials, etc.
  • the first sub-substrate 11 is a conductive substrate, and the substrate body and the support portion 14 are made of conductive
  • a sub-substrate may include but is not limited to copper substrate, aluminum substrate, iron substrate, silver substrate, etc.
  • the support part is made of the same material as the substrate body, such as metal material, and the first sub-substrate is integrally formed to ensure structural integrity.
  • the support portion 14 may be an extended region on the first sub-substrate, and a desired shape or the like is formed through processes such as stamping and etching.
  • a package structure such as a side wall is formed by encapsulating with a material such as plastic.
  • At least one of the first sub-substrate 11 and the second sub-substrate 12 is formed with at least one support portion 14 extending into the side wall of the bowl, and the support portion 14 extends from the substrate
  • the main body protrudes to protrude from the height direction of the substrate main body, and the support portion 14 extends into the first region T1 corresponding to the insulating region 3 in a direction close to the second sub-substrate 12 .
  • the LED bracket of this embodiment increases the strength of the side wall through the above-mentioned support portion 14, especially the strength of the first region T1 corresponding to the insulating region 3 is significantly improved, which reduces the situation that the side wall is broken due to external forces such as plate deformation, and ensures that the The quality of the LED holder and the LED lighting devices manufactured with it. It is foreseeable that the overall strength and reliability of the light-emitting unit made by using the LED bracket provided in this embodiment and the light-emitting assembly made by using the light-emitting unit will also be higher.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • the LED chip is arranged in the conductive area of the substrate of the LED support, and the LED chip is packaged and protected by the packaging glue to obtain the light-emitting unit of the LED device.
  • LED devices may work in high temperature, high humidity, and salt spray environments, and the packaging adhesive and substrate are prone to loosening or even falling off, resulting in failure of the protection of LED devices.
  • the present embodiment provides a larger contact area and stronger bonding strength between the substrate and the encapsulant, which can avoid the easy loosening or even falling off between the encapsulant and the substrate as much as possible.
  • the LED brackets in this embodiment may adopt the LED brackets shown in the above embodiments, and may also adopt LED brackets of other structures, which are not limited in this embodiment.
  • the LED bracket includes a substrate, as shown in FIG. 7 , the substrate includes a substrate body 21 , and a first conductive layer 22 and a second conductive layer 23 disposed on the first surface of the substrate body 21 .
  • the first conductive layer 22 and the second conductive layer 23 are separated by an insulating region to form two conductive regions.
  • the LED bracket in this embodiment may include an encapsulation body disposed on the substrate body 21 , and the encapsulation body may use but not limited to various encapsulation adhesives.
  • the edge of at least one of the first conductive layer 22 and the second conductive layer 23 is provided with a plurality of first grooves 25, so that the conductive layer on the substrate body in contact with the encapsulant has a larger side
  • the edge of the conductive layer ie, the sidewall
  • the substrate body can have a larger bonding area with the encapsulant, that is, the encapsulant can have a larger area on the substrate body of this embodiment.
  • the edges of the first conductive layer 22 and the second conductive layer 23 are provided with a plurality of first grooves 25 , and it should be understood that the first conductive layer 22 and the second conductive layer 23 can be One edge (ie, one side) of the conductive layer 23 is provided with the first groove 25 , and the first grooves 25 can also be provided on multiple edges thereof, so as to further improve the bonding area and bonding strength of the conductive layer 23 with the encapsulant.
  • At least two conductive vias 24 are provided on the substrate body 21, and the first conductive layer 22 and the second conductive layer 23 are respectively electrically connected to different conductive vias 24; as shown in FIG. 9, in this example
  • the substrate further includes a third conductive layer 26 and a fourth conductive layer 27 covering the second surface of the substrate body.
  • the third conductive layer 26 and the first conductive layer 22 are electrically connected through corresponding conductive vias 24.
  • the fourth conductive layer 27 and the second conductive layer 23 are electrically connected through other corresponding conductive vias 24; in this example, the first surface and the second surface of the substrate body are two opposite surfaces, such as but not limited to the front and back of the substrate body. .
  • the thickness of the plurality of first grooves 25 at the edges of the first conductive layer 22 and/or the second conductive layer 23 in the height direction of the conductive layer may be the same as the height of the conductive layer, or may be smaller than the height of the conductive layer .
  • the situation illustrated in FIG. 7 is that the thickness of the first groove 25 in the height direction of the conductive layer is the same as the height of the conductive layer.
  • the thickness of the first groove 25 in the height direction of the conductive layer is smaller than the height of the conductive layer.
  • first conductive layer 22 and/or the second conductive layer 23 are additionally formed with a plurality of first grooves, compared with the traditional rectangular or other shaped conductive layers, they have a larger side area , and the roughness of the sidewalls of the first conductive layer 22 and/or the second conductive layer 23 is generally high, therefore, when the encapsulant is set on the side where the first conductive layer 22 and the second conductive layer 23 are provided , stronger bond with the encapsulant. And in some implementation processes, the air tightness of the finally formed LED light-emitting device can also be improved accordingly.
  • Each conductive layer in this embodiment includes, but is not limited to, pads and pins.
  • the first conductive layer 22 and the second conductive layer 23 may be pads for arranging LED chips, and the third conductive layer Layer 26 and fourth conductive layer 27 may serve as pins.
  • a first groove or a similar shape may be formed on the conductive layer as the positive electrode or negative electrode pad, but in fact, such an arrangement is only used to facilitate butt welding
  • the positive and negative electrodes of the disc are not used to specifically enhance the adhesion of the encapsulant, and in some substrates, the positive and negative electrodes are distinguished by printed marks.
  • the first conductive layer 22 and/or the second conductive layer 23 have a plurality of first grooves 25, and the positions of these first grooves 25 can be continuous and regular in a certain period along the edge of the conductive layer
  • the arrangement can also be set according to the actual shape of the substrate and/or the layout of electronic devices such as LED chips to be mounted subsequently.
  • the conductive vias 24 in this embodiment penetrate from the first surface to the second surface of the substrate body 21 .
  • the location and number of the conductive vias 24 can be selected according to the actual situation.
  • the conductive vias 24 corresponding to the conductive layers 23 are separated from each other by a certain distance, so as to prevent the first conductive layer 22 and the second conductive layer 23 from being too close to each other.
  • the connection between the two sides of the substrate body can be realized by arranging a conductive metal layer in the conductive through hole 24, and the conductive metal layer is used to contact the first surface of the substrate body and the corresponding conductive layer on the second surface, so that the corresponding conductive layers can be connected. Electrical connections are formed between the conductive layers.
  • the material of the conductive metal layer can be any conductive metal, including but not limited to gold, silver, copper, platinum, and the like.
  • the conductive metal layer can be formed in the conductive through hole by a film forming process, such as vacuum sputtering, or can be formed by other film forming processes.
  • the conductive metal layer may not be filled with the conductive via 24.
  • the conductive via 24 is set to have a diameter of 50-200 um
  • the conductive metal layer is formed on the inner wall of the conductive via, and its thickness can be set to no more than 15 um .
  • the conductive vias 24 may also be filled with conductive metal materials, or filled with conductive metal rods, which can also achieve the effect of electrically connecting the corresponding conductive layers on both sides of the substrate.
  • the first conductive layer 22 , the second conductive layer 23 , the third conductive layer 26 , and the fourth conductive layer 27 include copper layers, which may be formed by, but not limited to, the conductive metal layers in the conductive vias 24 .
  • the formation method is similar and will not be repeated here.
  • the thickness of the copper layer can be set according to the actual device size or specification.
  • 26 and the fourth conductive layer 27 can be of the same thickness or different; the thickness of the first conductive layer 22 and the second conductive layer 23 can also be set to be the same thickness, and the thickness of the third conductive layer 26 and the fourth conductive layer 27 can be the same, but The thickness of the first conductive layer 22 and the third conductive layer 26 may be unequal.
  • At least one of the first conductive layer 22 , the second conductive layer 23 , the third conductive layer 26 and the fourth conductive layer 27 further includes a metal plating layer.
  • the metal plating layer here may include any A conductive metal that is chemically more stable than copper, such as gold, silver, platinum, or some alloys. Through metal plating, the conductive layer can have some corresponding metal surface properties, which is more stable than when bare copper is used as the conductive layer.
  • the above-mentioned first groove 25 on the substrate can be fabricated by methods including but not limited to etching and cutting.
  • a whole-surface copper layer may be formed on the substrate body 21 by, for example, vacuum sputtering, and then the copper layer may be formed into a desired shape by etching, cutting, etc.
  • the first groove 25 is also is produced.
  • the formation of the above-mentioned metal plating layer can be performed after the first groove 25 is fabricated, so that the sidewalls of the first conductive layer 22 and/or the second conductive layer 23 can be plated with desired metal.
  • the surface of the conductive layer may be ground and polished to make it flat.
  • the substrate body in this embodiment may include a ceramic plate, that is, the substrate in this embodiment may be a ceramic substrate, such as ALN, AL2O3 and other ceramic substrates. In other embodiments, the substrate body can also be made of other insulating materials.
  • the first grooves 25 of the first conductive layer 22 and the second conductive layer 23 on the substrate body may have various shapes.
  • the shapes of the first grooves 25 may include At least one of arc shape, rectangular shape and zigzag shape.
  • the edges of the first conductive layer 22 and the second conductive layer 23 are periodically arranged (ie, the intervals between the first grooves 25 are fixed) with rectangular first grooves 25 ;
  • the edge of the conductive layer is periodically arranged with arc-shaped first grooves 25;
  • the edge of the conductive layer shown in FIG. 11 is periodically arranged with zigzag first grooves 25; shown in FIG. 12 is another
  • the first grooves 25 in the form of serrations.
  • the shape of the first groove can also be other shapes, and its size and arrangement can be set.
  • the side areas of the conductive layer and the second conductive layer are increased, so as to achieve the effect of increasing the adhesiveness of the encapsulant.
  • a region corresponding to a first conductive layer 22 , a second conductive layer 23 , a third conductive layer 26 and a fourth conductive layer 27 can be provided with one or more LED chips. Moreover, more than one such region may also be provided on the substrate.
  • a plurality of first grooves are formed on the edges of the first conductive layer and/or the second conductive layer, so that the surface area of the rough side surface of the first conductive layer and/or the second conductive layer is increased.
  • the encapsulant can make contact with the sidewall of the first conductive layer and/or the second conductive layer in a larger area, so that the substrate can be more strongly combined with the encapsulant and reduce the final manufacturing process.
  • the encapsulation glue on the finished LED light-emitting device falls off, and the effect of improving the quality of the final LED light-emitting device is improved.
  • This embodiment also provides a light-emitting unit, which may also be referred to as an LED light-emitting device, please refer to FIG. 13 , which includes a substrate body 21 , an LED chip 28 and an encapsulation layer 29 .
  • the LED chip 28 is disposed on the first surface of the substrate main body 21 , the positive electrode of the LED chip 28 is welded to the first conductive layer 22 , the negative electrode of the LED chip 28 is welded to the second conductive layer 23 ; the packaging layer 29 is disposed on the first surface of the substrate main body 21 .
  • the surface covers the first conductive layer 22 , the second conductive layer 23 and the LED chip 28 , and the encapsulation layer 29 enters the first groove 25 at the edge of the first conductive layer 22 and/or the second conductive layer 23 .
  • the encapsulation layer 29 may be, but is not limited to, an encapsulation adhesive layer, and the encapsulation layer 29 enters the first groove 25 at the edge of the first conductive layer 22 and/or the second conductive layer 23, thereby increasing the connection between the substrate and the substrate.
  • the contact area of the sidewalls of the first conductive layer 22 and/or the second conductive layer 23 which is relatively rough on the upper surface can effectively improve the bonding strength between the first conductive layer 22 and the second conductive layer 23 and the substrate.
  • the light emitting unit may further include a Zener diode according to requirements.
  • the Zener diode is arranged on the first surface of the substrate body 21 , that is, arranged on the same side of the LED chip 28 .
  • the two conductive layers are welded 23, the negative electrode is welded to the first conductive layer 22, and the zener diode is also covered by the encapsulation layer.
  • the reverse-connected Zener diode can protect the LED chip. And set it on the same side of the LED chip, so that the Zener diode can also be covered by the encapsulation adhesive layer to be protected.
  • the LED light-emitting device may also include other components, which may also be arranged on the same side of the LED chip if the circuit structure permits.
  • the plurality of first grooves 25 on the edges of the first conductive layer 22 and the second conductive layer 23 are located outside the area covered by the LED chip 28; the light emitting unit further includes a Zener diode , the plurality of first grooves 25 are located outside the area covered by the Zener diode.
  • the first grooves 25 on the first conductive layer 22 and the second conductive layer 23 are along the edges of the first conductive layer 22 and the second conductive layer 23 respectively.
  • the first conductive layer 22 and the second conductive layer 23 are provided with more first grooves 25 in the length direction of the first conductive layer 22 and the second conductive layer 23 and on the side away from the center of the substrate.
  • first grooves 25 are also formed on several corners of the first conductive layer 22 and the second conductive layer 23; and one side close to the center of the substrate in the length direction of the first conductive layer or the second conductive layer A few first grooves 25 are also provided.
  • the first grooves on the first conductive layer 22 and the second conductive layer 23 are not provided at the positions covered by the LED chip 28 and the Zener diode, while the first conductive layer 22 and the second conductive layer 23 are The positions covered by the above components are provided with as many first grooves 25 as possible, so that the substrate and the encapsulation adhesive layer (not shown in the figure) have better adhesion.
  • the first groove 25 on the substrate can be selected according to the final component layout, avoiding the area covered by the components and ensuring that the first conductive layer 22 and the second conductive layer 23 have certain At the same time as the surface area, the first groove 25 is formed along the edges of the first conductive layer 22 and the second conductive layer 23 as much as possible to enhance the bonding strength between the substrate and the encapsulation adhesive layer, and in some implementations, the air tightness can also be Therefore, it is beneficial to ensure the final quality of the LED light-emitting device.
  • a manufacturing process of the substrate and the LED light-emitting chip of this embodiment is also described, including:
  • S101 Select a suitable substrate body to punch holes; for example, punch a hole in the lower left and upper right regions of the substrate body 21, for example, the hole diameter may be 50-200um.
  • the punched hole is the hole in which the conductive via will be formed later;
  • S102 Sputtering a metal layer on the front and back surfaces of the substrate main body and in the holes; for example, sputtering a thin metal layer on the substrate main body 21, and the thickness can be selected to be less than 15um.
  • the metal layer can be a conductive metal, such as copper, etc.;
  • S103 Pad printing a circuit on the surface of the main body of the substrate, and electroplating a thick copper layer on the metal layer;
  • S104 Make the thick copper layer into a desired shape of the conductive layer; after etching or cutting, the substrate shape as exemplified in FIG. 14 can be obtained;
  • S106 electroplating the surface of the conductive layer to obtain a finished substrate; for example, by electroplating, forming a metal plating layer on the surface of the copper layer;
  • S107 Arrange components on the substrate and encapsulate them with encapsulation glue.
  • the components are arranged on the substrate by means including but not limited to eutectic welding, and the components include Zener diodes and LED chips. layer production.
  • the thickness of the encapsulation adhesive layer may be 200-400um, and the encapsulation adhesive layer may be an insulating adhesive material, such as silica gel. It can be understood that, in some examples, the encapsulation adhesive layer needs to be higher than the highest surface of the components on the substrate to ensure that each component is covered to form protection.
  • the silicone package can be baked and cured at a temperature of 120-170°C. It should be understood that, when the substrate includes more than one region where the LED chips are arranged, the cured LED light-emitting device can be cut to obtain a single LED light-emitting device.
  • This embodiment also provides a light-emitting assembly, as shown in FIG. 15 , including a circuit board 210 and a light-emitting unit, the light-emitting unit can be the LED light-emitting device shown in the above examples of this embodiment, and the circuit board 210 includes a circuit layer 211 , The third conductive layer 26 and the fourth conductive layer 27 are welded to the circuit layer 211 . It can be understood that the circuit board 210 of the light-emitting assembly may also be provided with corresponding circuit patterns and components for driving the LED light-emitting device to emit light. In the light-emitting device of this embodiment, the encapsulation adhesive layer of the LED light-emitting device has a stronger bonding force with the substrate, is not easy to fall off from the substrate, and the quality of the light-emitting device is high.
  • this embodiment provides a new type of LED bracket.
  • a second groove is added, and the package body is in the second groove.
  • a stepped structure is formed at the place, and a part of the package covering the substrate is filled in the second groove, thereby increasing the contact area between the package and the substrate through the second groove, and enhancing the combination of the substrate and the package bracket
  • the bracket when the bracket is applied to the LED package to make the light-emitting unit, due to the arrangement of the second groove, the inner wall of the package can be allowed to increase the inclination degree compared with the existing solution, and it can still be guaranteed The required bonding strength can improve the light-emitting angle of the light-emitting unit.
  • the LED bracket in this embodiment may adopt the LED bracket shown in the above-mentioned embodiment (eg, the first embodiment), and may also adopt LED brackets of other structures, which are not limited in this embodiment.
  • the LED bracket includes a substrate 3 and a package body 32 arranged on the substrate 3 .
  • a second groove 31 is formed on the side of the substrate 3 connected to the package body 32 , and the package body 32 covers the bottom of the substrate 3 . Part of the surface is filled in the second groove 31 .
  • the substrate 3 can be used as a conductive and thermally conductive layer, and the material can be, but not limited to, copper alloy, aluminum, gold, silver, copper, and the like.
  • the encapsulation body 32 is a protective structure formed by filling material around the periphery of the substrate, and the material thereof may be, but not limited to, thermosetting resin or thermoplastic resin.
  • the depth of the second groove 31 opened on the LED bracket may be, but not limited to, 0.05 mm to 0.3 mm, and the width may be, but not limited to, 0.05 to 0.5 mm. Specifically, it needs to be considered as the package body 32
  • the particle size of the filler material, generally the width and depth need to be 2 times or more of the maximum particle size to avoid false filling.
  • the substrate 3 has two conductive regions separated by an insulating region 34.
  • the insulating region 34 is a strip-shaped hole-slot structure, and the insulating region 34 can be filled with insulating material. filler to achieve electrical isolation between the two conductive regions.
  • the inner wall of the package body 32 is funnel-shaped, and the size of the opening gradually increases in the direction away from the substrate 3 , that is, the size of the bowl enclosed by the package body 32 is increased.
  • the size of the opening gradually increases from the bottom of the bowl to the direction away from the base plate 3 .
  • the inner wall of the package body 32 is connected to the side of the notch of the second groove 31 close to the center of the cup (that is, the side of the notch of the second groove 31 away from the edge of the substrate 3 ), and the inner wall of the package body 32 is on the side of the substrate.
  • the projected shape in the sectional plane of 3 is a straight line L1 , that is, the inner wall shape of the package body 32 is the side surface of a truncated truncated or prismatic structure, wherein the sectional plane of the substrate 3 in this example is perpendicular to the surface of the substrate 3 .
  • the second groove 31 is provided where the substrate 3 and the package body 32 are combined, the interior of the package body 32 can be made more inclined, and the required bonding strength can still be ensured.
  • the angle of the outgoing light from the central axis of the LED is larger, so that the light outgoing angle ⁇ 1 of the LED package can be increased.
  • the inner wall of the package body 32 is funnel-shaped and the size of the opening gradually increases in the direction away from the substrate 3 , and the inner wall of the package body 32 is connected to the notch of the second groove 31 .
  • One side of the center of the cup, and the shape of the inner wall of the package body 32 in the section plane of the substrate 3 is a curve L2, and the specific shape of the curve includes but is not limited to circular arc, elliptical arc and parabola.
  • the second groove 31 is provided where the substrate 3 and the inner wall of the package body 32 are combined, the interior of the package body 32 can be made more inclined, and the required bonding strength can still be guaranteed.
  • the angle of the emitted light from the central axis of the LED is larger, so that the light output angle of the LED package body can be improved.
  • the inner wall of the package body 32 is funnel-shaped and the size of the opening gradually increases in the direction away from the substrate 3 .
  • the package body 32 covers the surfaces of the substrate 3 on both sides of the second groove 31 .
  • the shape of the inner wall of the package body 32 in the section plane of the substrate 3 includes a first segment 35 vertically connected to the surface of the substrate 3 and a second segment 36 inclined relative to the surface of the substrate 3 . Covering the surfaces of the substrate 3 on both sides of the second groove 31 by the package body 32 can make the package body 32 form a stepped structure on both sides of the second groove 31 , which further increases the bonding strength between the substrate 3 and the package body 32 and further provides Air tightness.
  • the first section 35 of the inner wall of the package body 32 is used to ensure the thickness of the package body 32, and the second section 36 is used to form an open gradually expanding opening to increase the light exit angle.
  • the side where the second groove 31 is provided on the substrate 3 is further provided with a third groove 33 for fixing chips (which may include but are not limited to LED chips).
  • the three grooves 33 can be formed in any conductive area on the substrate 3 .
  • the third groove 33 exists in the form of countersunk holes on the surface of the substrate 3, its depth may be but not limited to 0.05 mm ⁇ 0.3 mm, and the width may be greater than the side length of the chip to be fixed, so that the chip can be placed inside the third groove 33 .
  • the third groove 33 can play a role in deepening the cup depth of the package body 32.
  • the package layer on the chip may have a certain thickness to ensure the airtightness of the packaged product, and the chip It is not easy to be affected by the external environment and its reliability.
  • the function of the third groove 33 is that even if the height of the LED package body is not enough, the thickness of the package body can be guaranteed by the depth of the third groove 33, and the LED package can be packaged on the premise that the height of the package layer is met.
  • the size of the body should be kept as small as possible. This structure can also make the bonding wire 310 between the chip and the substrate 3 not easily exposed on the glue surface, thereby reducing the possibility of light decay and dead lamp.
  • bracket for the LED package provided in this embodiment are known to those of ordinary skill in the art, and the structures of related devices in the prior art can be referred to, and are not described here. Describe in detail.
  • This embodiment also provides a light-emitting unit, which includes the LED bracket provided in this embodiment, as shown in FIGS. 19 to 21 , the light-emitting unit in this embodiment includes an LED chip 38 , and the LED chip 38 passes through a die-bonding glue 37 .
  • the LED chip 38 Fixed on the surface of the substrate 3 inside the package body 32 (that is, in the cup), the LED chip 38 can be electrically connected to the substrate 3 through but not limited to the bonding wire 310 , and the packaging layer 39 is disposed in the cup formed by the package body 32 for use.
  • the LED chip 38 is sealed.
  • the third groove 33 is the die-bonding area of the LED package, the third groove 33 is located inside the cup-shaped package 32, and the LED chip 38 passes through the die-bonding glue. 37 is fixed inside the third groove 33 , and the electrical connection between the LED chip 38 and the substrate 3 is realized through the bonding wire 310 .
  • a third groove 33 is formed in the middle of the substrate 3, and a second groove 31 is formed around the third groove 33, wherein the depth of the second groove 31 is 0.05 mm to 0.3 mm, and the width is 0.05 to 0.05 mm. 0.5 mm, the depth of the third groove 33 is 0.05-0.3 mm, and the width needs to be larger than the side length of the LED chip 38 .
  • bracket under the action of the second groove 31 and the mold, the package body 32 formed by the filler extends into the second groove 31, and the substrate 3 and the package body 32 form a bracket structure.
  • the die-bonding adhesive 37 is placed in the die-bonding area in the third groove 33 by using die-bonding equipment and a fixture, and then the LED chip 38 is placed on the die-bonding adhesive 37 by the die-bonding equipment and the fixture, and the curing process is performed.
  • the LED chip 38 is fixed in the third groove 33 .
  • the material after die bonding and baking is bonded by wire bonding equipment and a fixture, so that the LED chip 38 is electrically connected to the substrate 3 through the bonding wire 310 .
  • the bonding wires 310 employed include, but are not limited to, gold wires, silver wires, or alloy wires.
  • the finally obtained light-emitting unit product has good air tightness, high product reliability, large light-emitting angle and high brightness, and can be applied to products that require high reliability indoors and outdoors.
  • the LED chips in this example are front-mounted LED chips, and can also be replaced with flip-chip LED chips or vertical LED chips according to requirements.
  • the light-emitting unit disclosed in this embodiment includes the bracket provided in the above-mentioned embodiment, the light-emitting unit having the bracket also has all the above-mentioned technical effects, which will not be repeated here.
  • Other structures and operations of the light-emitting unit are known to those of ordinary skill in the art, and will not be described in detail here.
  • Embodiment 4 is a diagrammatic representation of Embodiment 4:
  • a copper plating layer and a silver plating layer are usually arranged on the surface of the main body of the substrate in order to improve the overall performance of the LED bracket.
  • a large amount of copper ions in the copper coating will migrate into the silver coating and combine with the tin on the surface of the silver coating to form a tin-copper compound, thereby forming holes, resulting in production Yield is low.
  • this embodiment provides a new type of LED bracket, which includes a substrate, the substrate includes a substrate body (ie, the substrate body), and two conductive regions insulated and isolated by insulating regions are provided on the first surface of the substrate body.
  • at least one conductive area includes a first copper plating layer, a nickel plating layer, a second copper plating layer and a silver plating layer sequentially stacked on the first surface of the substrate body, and the thickness of the first copper plating layer is greater than that of the second copper plating layer.
  • the nickel plating layer is used to block the migration of copper ions in the first copper plating layer to the second copper plating layer.
  • the overall performance of the LED bracket is effectively improved, wherein the thickness of the second copper plating layer is relatively thin, and only There is a small amount of copper ions migrating into the silver plating layer, so as to effectively avoid the formation of a large number of tin-copper compounds between copper ions and the tin solder on the surface of the silver plating layer, resulting in the generation of holes, and due to the existence of the nickel plating layer, it can block the first copper plating layer.
  • the copper ions migrate into the second copper plating layer, which effectively prevents the content of the migrating copper ions in the second copper plating layer from increasing, so that the tin-copper compound cannot be formed in large quantities, and the production yield is improved.
  • other structures of the LED brackets in this embodiment may adopt the structures of the LED brackets shown in the above-mentioned embodiments, or may adopt other structures suitable for the LED brackets in this embodiment, which are not made in this embodiment. limit. For ease of understanding, this embodiment is described below with reference to the examples shown in the accompanying drawings.
  • the substrate of the LED bracket shown in FIG. 22 including a substrate body 40 and a first copper plating layer 41 , a nickel plating layer 42 , a second copper plating layer 43 and a silver plating layer 44 that are sequentially stacked on the surface of the substrate main body 40 , wherein: the substrate main body 40 It has a certain structural strength to play a bearing role.
  • the substrate body 40 should be made of a material with high thermal conductivity, so that when the LED chip generates heat during operation, the heat generated by the LED chip can be conducted through the LED bracket to achieve effective heat dissipation.
  • the material of the substrate body 40 may be a conductive material, such as a metal material. It should be understood that the material of the substrate main body 40 includes, but is not limited to, conductive materials, and can also be made of any other high thermal conductivity material with certain structural strength, and the material of the substrate main body 40 is not specifically limited herein.
  • the substrate main body 40 includes a first surface 401 and a second surface 402 that are opposite to each other, and the first surface 401 and the second surface 402 are laminated with a first copper plating layer 41 , a nickel plating layer 42 , a second surface Two copper plating layers 43 and silver plating layers 44 .
  • the metal plating layer on the first surface 401 is used for connecting with the LED chip, and the metal plating layer on the second surface 402 is used for connecting with the circuit board. It should be understood that the above-mentioned metal plating layer can be formed on the surface of the substrate main body 40 by, but not limited to, electroplating.
  • the above-mentioned metal plating layer can be formed on the first surface 401 and the second surface 402 to reduce the difficulty of the process and improve the processing efficiency.
  • the methods for forming the first copper plating layer 41 , the nickel plating layer 42 , the second copper plating layer 43 and the silver plating layer 44 on the surface of the substrate main body 40 include but are not limited to electroplating, and metal evaporation, chemical plating or other methods may also be used.
  • the processing can be carried out in any manner that satisfies the corresponding functional requirements, and the processing and forming method of the above-mentioned metal plating layer is not specifically limited herein.
  • the first copper plating layer 41 is provided on the surface of the substrate main body 40 .
  • the surface of the substrate body 40 usually has the problem of poor flatness. If the substrate body 40 is directly mounted on the circuit board, there will be a gap or gap between the substrate body 40 and the circuit board. voids, resulting in lower production yields. Similarly, if the LED chip is directly mounted on the uneven surface of the substrate body 40, the working effect of the LED chip will be affected to a certain extent.
  • the surface flatness of the LED bracket is improved, gaps or holes between the LED bracket and the circuit board are effectively avoided, and the LED chip When it is installed on the relatively flat first copper plating layer 41, its working effect can also be effectively improved.
  • the thickness of the first copper plating layer 41 ranges from 0.5 ⁇ m to 5 ⁇ m. It should be understood that when the thickness of the first copper plating layer 41 is less than 0.5 ⁇ m, the thickness of the first copper plating layer 41 is too thin, and it is difficult to compensate for the depression on the surface of the substrate main body 40 , so that the flattening effect cannot be achieved, and the corresponding LED There will still be gaps or holes between the bracket and the circuit board, and the LED chip is installed on the corresponding LED bracket, and its working effect will still be affected to a certain extent; when the thickness of the first copper plating layer 41 is greater than 5 ⁇ m, the first copper The thickness of the plating layer 41 is relatively thick, which increases the manufacturing cost to a certain extent. Based on this, when the thickness of the first copper plating layer 41 is greater than or equal to 0.5 ⁇ m and less than or equal to 5 ⁇ m, the manufacturing cost can be effectively reduced while ensuring the surface flatness of the LED bracket.
  • the nickel plating layer 42 is provided between the first copper plating layer 41 and the second copper plating layer 43 .
  • the LED bracket and the circuit board and between the LED chip and the LED bracket are usually fixedly connected by soldering, and there is a tin solder layer on the surface of the silver plating layer 44.
  • the copper ions in the first copper plating layer 41 are easily migrated to the second copper plating layer 43, so that the copper ions in the second copper plating layer 43 increase, and a large amount of copper ions will migrate from the second copper plating layer 43 to the above-mentioned silver plating layer 44.
  • the generation of a large amount of tin-copper compound easily leads to the formation of holes between the LED bracket and the circuit board and between the LED bracket and the LED chip, thereby reducing the production yield.
  • the existence of the nickel plating layer 42 can effectively prevent the copper ions in the first copper plating layer 41 from migrating to the second copper plating layer 43, thereby effectively preventing a large amount of copper ions from migrating into the silver plating layer 44 and forming more tin solder on the surface of the silver plating layer. tin-copper compound.
  • the silver plating layer 44 connected to the LED chip can also reflect the light emitted by the LED chip, so as to improve the brightness.
  • the existence of the nickel plating layer 42 can effectively prevent a large amount of copper ions from migrating into the silver plating layer 44 to reduce the reflectivity of the silver plating layer 44 , thereby ensuring that the corresponding reflection function of the silver plating layer 44 is normal.
  • the thickness of the nickel plating layer 42 ranges from 0.125 ⁇ m to 2.5 ⁇ m. It should be understood that when the thickness of the nickel plating layer 42 is less than 0.125 ⁇ m, the thickness of the nickel plating layer 42 is too thin, and it is difficult for the nickel plating layer 42 to effectively block the migration of copper ions, so that the generation of a large number of tin-copper compounds cannot be avoided, and the silver plating layer cannot be guaranteed.
  • the reflectivity of 44 meets the corresponding requirements; when the thickness of the nickel plating layer 42 is greater than 2.5 ⁇ m, the thickness of the nickel plating layer 42 is relatively thick, which increases the manufacturing cost to a certain extent. Based on this, when the thickness of the nickel plating layer 42 is greater than or equal to 0.125 ⁇ m and less than or equal to 2.5 ⁇ m, the manufacturing cost can be effectively reduced while blocking the migration of copper ions.
  • the second copper plating layer 43 is disposed between the nickel plating layer 42 and the silver plating layer 44 , and the thickness of the second copper plating layer 43 is smaller than the thickness of the first copper plating layer 41 . It should be understood that when the silver plating layer 44 is directly disposed on the surface of the nickel plating layer 42, the bonding degree between the silver plating layer 44 and the nickel plating layer 42 is poor, and the silver plating layer 44 is easily detached from the surface of the nickel plating layer 42, thereby causing the LED bracket The stability of the LED bracket is poor.
  • the bonding degree between the second copper plating layer 43 and the silver plating layer 44 is better, which can effectively improve the structural stability of the LED bracket.
  • the thickness of the second copper plating layer 43 should be smaller than the thickness of the first copper plating layer 41, that is, the thickness of the second copper plating layer 43 should be thinner, so that the content of copper ions in the second copper plating layer 43 is less, which is effective.
  • a large number of copper ions are prevented from migrating from the second copper coating layer 43 to the silver coating layer 44, the number of holes formed by the tin-copper compound is reduced to a certain extent, the production yield is effectively improved, and the reflectivity of the silver coating layer 44 is also guaranteed. meet the corresponding requirements.
  • the thickness of the second copper plating layer 43 ranges from 0.0625 ⁇ m to 1 ⁇ m. It should be understood that when the thickness of the second copper plating layer 43 is less than 0.0625 ⁇ m, the thickness of the second copper plating layer 43 is too thin, the second copper plating layer 43 cannot play a binding role, and the silver plating layer 44 still has the problem of being easily detached.
  • the structural stability of the LED bracket cannot be effectively guaranteed; when the thickness of the second copper plating layer 43 is greater than 1 ⁇ m, the thickness of the second copper plating layer 43 is too thick, and the content of copper ions in the second copper plating layer 43 is large, so that copper ions are easily removed from A large amount of the second copper plating layer 43 migrates to the silver plating layer 44 connected to the circuit board, and then forms a large amount of tin-copper compound with the tin on the surface of the silver plating layer 44 , thereby forming holes and reducing the production yield.
  • the thickness of the second copper plating layer 43 is greater than or equal to 0.0625 ⁇ m and less than or equal to 1 ⁇ m, it can effectively combine with the silver plating layer 44 while preventing a large amount of copper ions from migrating into the silver plating layer 44 .
  • the silver plating layer 44 is provided on the side of the second copper plating layer 43 away from the nickel plating layer 42 . It should be understood that, on the side close to the first surface 401 of the substrate main body 40 , the LED chip is disposed on the surface of the silver coating 44 . Due to the high reflectivity of the silver coating 44 , the light emitted by the LED chip can be reflected by the silver coating 44 , so as to effectively improve its bright effect; on the side close to the second surface 402 of the substrate main body 40, the circuit board is connected to the surface of the silver plating layer 44, usually, the circuit board and the LED bracket are usually soldered.
  • connection method between the LED bracket and the circuit board includes, but is not limited to, the connection by soldering, and can also be connected by any other connection method that meets the corresponding functional requirements.
  • the LED bracket and the circuit board are not connected here. The connection mode between them is specifically limited.
  • the thickness of the silver plating layer 44 ranges from 0.25 ⁇ m to 5 ⁇ m. It should be understood that when the thickness of the silver plating layer 44 is less than 0.25 ⁇ m, the thickness of the silver plating layer 44 is too thin, and the silver plating layer 44 close to the first surface 401 of the substrate main body 40 is difficult to reflect light. The silver plating layer 44 on the second surface 402 is difficult to combine with the tin solder layer; when the thickness of the silver plating layer 44 is greater than 5 ⁇ m, the thickness of the silver plating layer 44 is too thick. manufacturing cost.
  • the thickness of the silver plating layer 44 is greater than or equal to 0.25 ⁇ m and less than or equal to 5 ⁇ m, the reflection of light and the bonding with the solder layer can be satisfied at the same time, and the manufacturing cost can be effectively reduced.
  • the first copper plating layer 41 , the nickel plating layer 42 , the second copper plating layer 43 and the silver plating layer 44 are sequentially stacked on the surface of the substrate main body 40 , thereby effectively improving the overall performance of the LED bracket.
  • the thickness of the copper plating layer 43 is relatively thin, and only a small amount of copper ions in the second copper plating layer 43 migrate to the silver plating layer 44, thereby effectively preventing copper ions and the tin solder on the surface of the silver plating layer 44 from forming a large amount of tin-copper compounds and causing holes.
  • the copper ions in the first copper plating layer 41 can be blocked from migrating into the second copper plating layer 43, and the content of the migrating copper ions in the second copper plating layer 43 can be effectively prevented from increasing, so that the tin-copper compound cannot be Formed in large quantities, the production yield has been improved.
  • FIG. 23 is a schematic structural diagram of an LED bracket in another example of this embodiment
  • FIG. 24 is a structural schematic diagram of an LED bracket in another example of this embodiment.
  • the LED bracket further includes a palladium plating layer 45 .
  • the palladium plating layer 45 is disposed on the side of the silver plating layer 44 away from the second copper plating layer 43 , and the palladium plating layer 45 is used to protect the silver plating layer 44 .
  • the structure of the palladium coating 45 is relatively stable, and the palladium coating 45 covers the surface of the silver coating 44, which can improve the oxidation resistance, sulfidation resistance and corrosion resistance of the silver coating 44, and improve the LED bracket to a certain extent. performance.
  • the thickness of the palladium plating layer 45 in this example ranges from 0.0025 ⁇ m to 0.25 ⁇ m.
  • the thickness of the palladium coating 45 is less than 0.0025 ⁇ m, the thickness of the palladium coating 45 is too thin, and the palladium coating 45 cannot sufficiently protect the silver coating 44, so that the silver coating 44 is easily oxidized, vulcanized or even Corrosion; when the thickness of the palladium plating layer 45 is greater than 0.25 ⁇ m, the thickness of the palladium plating layer 45 is too thick, and the manufacturing cost is greatly increased due to the high price of palladium. Based on this, when the thickness of the palladium plating layer 45 is greater than or equal to 0.0025 ⁇ m and less than or equal to 0.25 ⁇ m, the silver plating layer 44 can be effectively protected and the manufacturing cost can be reduced.
  • the metal plating layer after the metal plating layer is formed on the surface of the substrate main body 40, it can be soaked in an antioxidant and then cleaned and air-dried, so as to further improve the oxidation resistance of the LED bracket.
  • a palladium plating layer 45 may be provided only on the surface of the silver plating layer 44 connected to the LED chip.
  • the silver plating layer 44 connected to the circuit board is usually covered by a tin solder layer, and the tin solder layer can protect the silver plating layer 44 to a certain extent.
  • the palladium plating layer 45 can be provided on the surface of the silver plating layer 44 connected to the LED chip to protect the silver plating layer 44 .
  • the light-emitting unit includes an LED chip 404, an encapsulation layer 405 and the LED bracket provided in this embodiment.
  • the encapsulation layer 405 and the LED chip 404 are both disposed on the surface of the substrate 403, and the LED chip 404 is located at the bottom of the bowl.
  • a tin solder layer may also be provided between the LED bracket and the encapsulation layer 405 , that is, the LED bracket and the encapsulation layer 405 are fixed by soldering, and of course they can also be fixed by conductive glue.
  • the light-emitting unit provided in this embodiment can effectively improve the production yield of the light-emitting unit while ensuring the overall performance of the light-emitting unit by installing the LED bracket provided in any embodiment of the present application.
  • This embodiment also provides an LED package device, the LED package device includes a package body and the above-mentioned light-emitting unit, and the package body accommodates the light-emitting unit to realize package protection.
  • the LED package device provided in this embodiment can effectively improve the production yield of the display device while ensuring the overall performance of the LED package device is better by installing the light-emitting unit provided in this embodiment.
  • This embodiment also provides a light-emitting assembly, including the light-emitting unit or the LED package device provided in this embodiment.
  • the light emitting assembly provided in this embodiment can effectively improve the production yield of the display device while ensuring good overall performance of the light emitting assembly by installing the light emitting unit or the LED package device provided in this embodiment.
  • Embodiment 5 is a diagrammatic representation of Embodiment 5:
  • Traditional LED chip packaging usually uses insulating glue to fix the positive chip on the substrate, and then uses bonding wires to connect the positive and negative electrodes of the chip to the positive and negative electrodes of the substrate. Finally, the fluorescent glue cake is molded and injected onto the substrate. This structure makes it difficult to reduce the thickness of the product and cannot meet the application requirements of ultra-thin LED products.
  • a fourth groove recessed from the first surface to the second surface and not penetrating the second surface is formed in the area of the substrate body in the bowl, wherein the second surface is far away from the bowl;
  • the substrate includes The first pad and the second pad are arranged in the fourth groove and are insulated and isolated by the insulating region, the first pad and the second pad both extend from the bottom wall of the fourth groove to the second surface of the substrate body, The portions of the first pad and the second pad located in the fourth groove respectively form two conductive areas.
  • the LED bracket can be the LED bracket shown in the above-mentioned embodiments, or an LED bracket of other structures, which is not limited in this embodiment.
  • the LED bracket provided in this embodiment includes a substrate, a first pad 51 , a second pad 52 and an LED chip 53 .
  • the substrate 1 includes a substrate main body 5, the substrate main body 5 includes a first surface 501 and a second surface 502 opposite to each other, the substrate main body 5 has a fourth groove 54 on the first surface 501, and the fourth groove 54 does not penetrate the second surface. 502.
  • the first pads 51 and the second pads 52 are provided on the substrate body 5 at intervals by insulating regions, and both the first pads 51 and the second pads 52 extend from the bottom wall of the fourth groove 54 to the second Surface 502.
  • the LED chip 53 is at least partially accommodated in the fourth groove 54 , the first electrode of the LED chip 53 is connected to the first pad 51 , and the second electrode of the LED chip 53 is connected to the second pad 52 .
  • the substrate main body 5 can be, but is not limited to, a PCB board.
  • the PCB board is provided with a fourth groove 54 .
  • the fourth groove 54 is recessed from the first surface 501 to the second surface 502 and does not penetrate through the second surface 502 .
  • the fourth groove 54 is used for accommodating the LED chip 53 , and a circuit matching the LED chip 53 is printed on the bottom wall of the fourth groove 54 .
  • the number of LED chips 53 can be set to more than one according to actual requirements, and the installation positions thereof are determined according to actual requirements, which are not limited in this embodiment.
  • the depth of the fourth groove 54 is smaller than the thickness of the LED chip 53 , and the LED chip 53 is partially accommodated In the fourth groove 54; as shown in FIG. 27 and FIG. 28, when the thickness of the substrate body 5 is greater than the thickness of the LED chip 53 and the LED chip 53 is required not to protrude from the first surface 501, the fourth groove 54 The depth is greater than or equal to the thickness of the LED chip 53 , and the LED chip 53 is completely accommodated in the fourth groove 54 .
  • This structure can better protect the LED chip 53 and prevent it from being exposed outside the fourth groove 54 from collisions and other injuries.
  • the LED chip 53 adopts a flip-chip LED chip to make the structure of the LED module more compact. In other embodiments, structures such as front mounted LED chips and vertical LED chips can also be selected.
  • the first pad 51 and the second pad 52 are made of a metal material with a conductive function or a conductive metal layer is provided on the outer surface, and a distance is set between the first pad 51 and the second pad 52 .
  • the first pad 51 includes a first end 511 and a second end 512 , and the first pad 51 extends from the first end 511 to the second end 512 .
  • the first end 511 is accommodated in the fourth groove 54
  • the second end 512 is connected to the second surface 502 of the substrate body 5 .
  • the second pad 52 includes a third end 521 and a fourth end 522 , and the second pad 52 extends from the third end 521 to the fourth end 522 , and the third end 521 is accommodated in the fourth groove 54 , the fourth end 522 is connected to the second surface 502 .
  • the anode of the LED chip 53 is connected to the first end 511 of the first pad 51
  • the cathode of the LED chip 53 is connected to the third end 521 of the second pad 52 . It can be understood that the positions of the first pad 51 and the second pad 52 can be interchanged, that is, when one of the pads is the first pad 51 , the other pad is the second pad 52 .
  • the height of the LED chip 53 protruding from the first surface 501 is reduced, so that the overall It can reduce the thickness of LED products to meet the application requirements of ultra-thin LED products.
  • the shape of the fourth groove 54 corresponds to the shape of the LED chip 53 .
  • a square fourth groove 54 can be opened; as shown in FIG. 30 , when the number of LED chips 53 is one and the When it is circular, a circular fourth groove 54 can be opened; as shown in FIG. 31 , when the number of LED chips 53 is multiple and arranged irregularly, the shape of the fourth groove 54 can be correspondingly irregular shape.
  • the area of the bottom wall of the fourth groove 54 is always larger than the area of the orthographic projection of the LED chip 53 on the first surface 501 , so that the fourth groove 54 can accommodate the LED chip 53 .
  • the shape and size of the fourth groove 54 can be flexibly adjusted, which is not only beneficial to the processing of the fourth groove 54 but also to the area of the substrate body 5 .
  • the shape and size of the fourth groove 54 can be adjusted in real time according to the shape and layout of the LED chip 53 to meet various requirements.
  • the number of the fourth grooves 54 is more than one, and the number of the LED chips 53 in each fourth groove 54 is more than one.
  • a fourth groove 54 is formed on the substrate main body 5 , and the number of LED chips 53 in the fourth groove 54 is one; as shown in FIG. 31 , the substrate main body 5 is formed with one LED chip 53 .
  • There is a fourth groove 54 and a plurality of LED chips 53 are arranged inside the fourth groove 54 .
  • multiple LED chips 53 can be arranged in one groove 1 as required, so as to avoid multiple processing of the fourth grooves 54 ; it is also possible to increase the number of the fourth grooves 54 The number of cuts to the substrate main body 5 is reduced, and the structural strength is improved.
  • the substrate body 5 includes a first side 55 and a second side 56 opposite to each other, and the first end 511 of the first pad 51 passes from the bottom wall of the fourth groove 54 through the first side.
  • the surface 501 and the first side 55 extend to the second surface 502 to form the second end 512
  • the third end 521 of the second pad 52 extends from the bottom wall of the fourth groove 54 through the first surface 501 and the second side 56 to
  • the second surface 502 forms a fourth end 522
  • the first end 511 of the first pad 51 and the third end 521 of the second pad 52 are in the fourth recess 54 hanging down relative to the bottom wall of the fourth recess 54
  • Line B is arranged symmetrically, and the first end 511 and the third end 521 are arranged at intervals.
  • an insulating substance may be provided between the first end 511 and the third end 521, and the insulating substance is in contact with the first end 511 and the third end 521, respectively, so that the insulating substance separates the first pad 51 and the second While the pads 52 are electrically isolated, they are in contact with the first pads 51 and the second pads 52 respectively through insulating substances, which is more convenient for uniform heat conduction.
  • the LED chip package structure further includes a reinforcing member 57 .
  • a reinforcing member 57 on the bottom wall of the fourth groove 54 , there is a first gap L1 between the first pad 51 and the second pad 52 , and the first gap L1 is used to connect the first pad 51 The positive and negative pads are separated from the second pad 52 to form a positive and negative pad.
  • the size of the first gap L1 is set according to the distance between the positive and negative electrodes of the LED chip 53. When the distance between the positive and negative electrodes of the LED chip 53 is large, the first gap L1 L1 is relatively large.
  • the first gap L1 is relatively small.
  • the reinforcement member 57 is disposed on the second surface 502 , and the orthographic projection of the reinforcement member 57 on the second surface 502 completely covers the orthographic projection of the first gap L1 on the second surface 502 .
  • a second gap L2 between the first pad 51 and the second pad 52 .
  • a second gap L2 is provided between the second end 512 of the first pad 51 and the fourth end 522 of the second pad 52 to separate the first pad 51 from the second pad 52, By electrically isolating the first pad 51 from the second pad 52 , the first pad 51 and the second pad 52 respectively form positive and negative pads.
  • an insulating substance is provided between the second gaps L2, so as to achieve electrical isolation between the first pad 51 and the second pad 52 through the insulating substance, and at the same time, the first pad 51 can be separated by the insulating substance. It is connected with the second pad 52 as a whole, so as to facilitate uniform heat conduction.
  • the reinforcing member 57 and the first pad 51 or the second pad 52 are integrally formed.
  • the reinforcing member 57 and the first pad 51 are in an integrated structure, and the reinforcing member 57 is formed from the second end 512 of the first pad 51 from the side where the first side 55 is located to the second side.
  • the side where 56 is located extends, and the orthographic projection of the reinforcing member 57 on the second surface 502 completely covers the orthographic projection of the first gap L1 on the second surface 502; as shown in FIG.
  • the reinforcing member 57 and the second pad 52 are integrated
  • the reinforcement member 57 extends from the fourth end 522 of the second pad 52 from the side where the second side surface 56 is located to the side where the first side surface 55 is located, and the area of the orthographic projection of the reinforcement member 57 on the second surface 502, It is larger than the area of the orthographic projection of the first gap L1 on the first surface 501 .
  • the reinforcing member 57 is disposed in the second gap L2 , and the width of the reinforcing member 57 is smaller than the second gap L2 to form a distance from both the first pad 51 and the second pad 52 .
  • the reinforcing member 57 is attached to the second surface 502 , and the area of the orthographic projection of the reinforcing member 57 on the second surface 502 is larger than the area of the orthographic projection of the first gap L1 on the first surface 501 .
  • the reinforcing member 57 may be made of metal or non-metallic materials with certain structural strength, such as metal materials such as copper, non-metal materials such as ceramics, and the like.
  • the reinforcement 57 is detachably connected to the second surface 502 .
  • the reinforcing member 57 By arranging the reinforcing member 57 in the second gap L2, the problem that the substrate body 5 is easy to bend and break at the first gap L1 due to its small thickness can be avoided, and the reinforcing member 57 and the first pad 51 and the second pad 52 are mutually Independent, can be flexibly installed according to needs.
  • a solder resist layer 58 is provided on the surface of the reinforcing member 57 facing away from the substrate main body 5 .
  • the reinforcing member 58 and the first pad 51 or the second pad 52 have an integral structure. Since the surface of the reinforcing member 57 facing away from the substrate main body 5 is made of a metal material with electrical conductivity, the solder resist layer 58 is made of acid-resistant and solvent-resistant materials. and insulating properties of materials such as ink layers.
  • solder resist layer 58 is coated on the surface of the reinforcement member 57 facing away from the substrate main body 5 to form a protective layer, which is beneficial to prevent the corrosion of the reinforcement member 57 due to external moisture and other factors, and its high insulation can prevent the patch The short circuit problem caused by the tilt of the components and the theoretical position.
  • This embodiment provides a light-emitting assembly, which includes a light-emitting unit made of the LED bracket described in any of the above embodiments.
  • the light-emitting components can be general lighting devices, such as LED light-emitting diodes, high-power ceramic LED light sources, etc., and can be used in high-end markets such as road lighting, architectural lighting, landscape lighting, and indoor lighting. It can also be a backlight light source for display devices such as LED-backlit LCD TVs and smart wearable devices.
  • the thickness of the light source is made smaller, which is beneficial to reduce the thickness of the display device and meet the application requirements of the ultra-thin display device.
  • This embodiment also provides an LED chip packaging method, the method includes making the packaging structure of the LED chip described in the above embodiment and using the packaging structure of the LED chip for packaging, including but not limited to:
  • a fourth groove 54 is defined on the substrate main body 5 .
  • the substrate body 5 includes a first surface 501 and a second surface 502 that are opposite to each other.
  • a fourth groove 54 is formed on the first surface 501 of the substrate main body 5 by means of laser cutting, and the fourth groove 54 is recessed from the first surface 501 to the second surface 502 but does not penetrate the second surface 502 ,
  • the fourth groove 54 divides the substrate body 5 into two regions, a positive electrode and a negative electrode.
  • the fourth groove 54 may also be processed on the substrate main body 5 by means of deep-controlled gong machining, double-sided core board pressing, or the like.
  • the first pads 51 and the second pads 52 are provided on the substrate body 5 at intervals.
  • the first pad 51 and the second pad 52 are made of a metal material with a conductive function or the outer surfaces are coated with a metal plating layer with a conductive function.
  • the first pad 51 includes a first end 511 and a second end 512 .
  • the first end 511 is accommodated in the fourth groove 54 and is connected to the bottom wall of the fourth groove 54
  • the second end 512 is connected to the bottom wall of the substrate body 5 .
  • the second surface 502 is connected, and the first pad 51 extends from the first end 511 to the second end 512 .
  • the second pad 52 includes a third end 521 and a fourth end 522, the third end 521 is accommodated in the fourth groove 54, the fourth end 522 is connected to the second surface 502, and the second pad 52 It extends from the third end 521 to the fourth end 522 .
  • a spacing distance is provided between the first end 511 and the third end 521 , the second end 512 and the fourth end 522 .
  • the LED chip 53 is connected to the first pad 51 and the second pad 52 .
  • the solder 59 can be printed in the fourth groove 54 of the substrate body 5 through a 3D steel mesh.
  • the commonly used solder 59 includes silver glue, solder paste and flux, etc.
  • the opening pattern of the 3D steel mesh is based on the LED chip 53.
  • the electrodes are designed; then the LED chip 53 is placed on the solder 59.
  • the selected solder 59 is silver paste
  • the baking operation is performed, and the conditions are generally: constant temperature of 170° C. and time of 1H.
  • the selected solder 59 is solder paste or flux, the reflow soldering operation is performed.
  • the conditions are generally: the maximum furnace temperature is 290°C, the time is 30s, and it needs to be performed in a nitrogen environment to avoid oxidation of the metal particles in the solder 59. , this step is used to connect the first electrode of the LED chip 53 to the first pad 51 through solder 59 , and the second electrode of the LED chip 53 to connect to the second pad 52 .
  • the fourth groove 54 is formed on the substrate main body 5 by means of laser cutting, which has higher processing precision and processing efficiency, and improves the yield of finished products.
  • the first electrode and the second electrode of the LED chip 53 are connected to the first pad 51 and the second pad respectively.
  • 52 is connected in the fourth groove 54, which reduces the height of the LED chip protruding from the substrate main body 5, thereby reducing the thickness of the LED product.
  • the first pads 51 and the second pads 52 are arranged on the substrate body 5 at intervals, specifically including:
  • the first pads 51 and the second pads 52 are symmetrically arranged with respect to the vertical line B of the bottom wall of the fourth groove 54 .
  • the first end 511 of the first pad 51 and the third end 521 of the second pad 52 are respectively disposed on both sides of the vertical line B in the fourth groove 54, and the first end 511 and the third end 521
  • the distances between the three ends 521 and the vertical line B are equal to achieve structural symmetry and avoid bending damage caused by uneven thickness of the LED package structure.
  • a reinforcing member 57 is provided on the second surface 502 .
  • two independent metal blocks or metal plates are used as the first pad 51 and the second pad 52, and one end of the first pad 51 and the second pad 52 is accommodated in the fourth groove 54.
  • On the bottom wall there is a first gap L1 between the first pad 51 and the second pad 52 , and the other ends of the first pad 51 and the second pad 52 both extend to the second surface 502 .
  • the reinforcing member 57 is also a metal structure and is disposed on the second surface 502 , and its orthographic projection on the second surface 502 completely covers the orthographic projection of the first gap L1 on the second surface 502 .
  • the thickness of the LED package structure at the first gap L1 is increased, thereby improving the performance of the LED package. Structural strength.
  • setting a reinforcement member 57 on the second surface 502 includes: setting the reinforcement member 57 and the first pad 51 or the second pad 52 as an integral structure.
  • the substrate body 5 includes opposite first side surfaces 55 and second side surfaces 56 .
  • the reinforcement member 57 and the first pad 51 are integrally formed, the reinforcement member 57 is directed from the second end 512 of the first pad 51 to the side.
  • the fourth end 522 of the second pad 52 extends until the distance from the second end 512 to the first side 55 is greater than the distance from the third end 521 to the first side 55 .
  • the reinforcement member 57 extends from the fourth end 522 of the second pad 52 to the second end 512 of the first pad 51 until the fourth end 522 reaches the second end 512 of the first pad 51 .
  • the distance between the two side surfaces 56 is greater than the distance from the first end 511 to the second side surface 56 .
  • the reinforcing member 57 is a separate metal block or a structure made of other materials with certain structural strength, and the reinforcing member 57 is glued to the first pad 51 or the second pad 52 or welding.
  • the reinforcement member 57 is spaced apart from the first pad 51 or the second pad 52 , and the orthographic projection of the reinforcement member 57 on the second surface 502 completely covers the orthographic projection of the first gap L1 on the second surface 502 .
  • the reinforcing member 57 By arranging the reinforcing member 57 on the second surface 502, the problem that the substrate main body 5 is easily damaged due to the excessively thin thickness at the first gap L1 can be avoided.
  • a reinforcing member 57 after disposing a reinforcing member 57 on the second surface 502 , it may further include: disposing a solder resist layer 58 on the surface of the reinforcing member 57 facing away from the substrate main body 5 .
  • the surface of the reinforcing member 57 facing away from the substrate main body 5 is coated with liquid photoresist, and the liquid photoresist can be green, Solder mask ink of any color such as red, white, etc. The solder mask ink is viscous before use.
  • solder mask layer 58 After printing, pre-baking, alignment, exposure, development, and curing, a solder mask layer 58 is formed, and the reinforcement 57 is turned away from the substrate. The surface of the main body 5 is completely covered. Since the solder resist layer 58 has the advantages of corrosion resistance, high temperature resistance, and high insulation, it has a good protective effect on the LED package structure, and its high insulation avoids the problem that components are prone to short circuit.
  • a solder resist layer 58 is provided on the surface of the reinforcing member 57 facing away from the substrate body 5, it may further include: encapsulation cutting.
  • the configured epoxy resin fluorescent glue cake 510 is placed in the molding machine, and the corresponding parameters are adjusted to encapsulate the preheated and cleaned semi-finished product.
  • the cutting machine uses a blade with a corresponding thickness to perform a corresponding cutting process on the entire substrate body 5, and finally becomes the desired product.
  • Embodiment 6 is a diagrammatic representation of Embodiment 6
  • Fresh lighting is a new generation of special lighting specially designed for fresh food lighting, which can highlight the color characteristics of fresh food, thereby stimulating people's desire to buy.
  • the spectrum of fresh lighting lamps on the market are mainly mixed with ordinary white light or monochromatic light, without taking into account the refined color management and the special scientific adjustment corresponding to the color reproduction ability of different illuminated items.
  • the common fresh lighting on the market usually adopts the white lamp bead + red lamp bead scheme, and its light mixing effect is poor. There is also a blue light chip + green phosphor + red phosphor solution.
  • the normalized spectrum of the fresh white light excited by it is shown in Figure 34 or Figure 35.
  • the peaks of the red light band in the two normalized spectrum diagrams correspond to The wavelength of the light is lower than 600nm, the penetration of red light is insufficient, the color of fresh lighting is distorted, and the degree of restoration of the color of fresh meat is low. Furthermore, the relative optical power (ie relative light intensity) of the peaks in the red light band of the two normalized spectrograms is lower than 0.75, and the display effect of raw bright red is poor. Moreover, the red light band is connected to the green light band, which is easy to produce yellow light. Yellow light will affect the demand for red saturation of fresh meat, and then present a brown color that is easy to mislead consumers. This is common in existing fresh lighting. question.
  • this embodiment provides two light-emitting units that can be applied to but not limited to fresh lighting lamps, which have better color restoration of fresh food, can reduce the generation of yellow light to a certain extent, and avoid yellow light. It affects the demand for red saturation of fresh meat, thereby further improving the degree of color reduction of fresh lighting, avoiding the appearance of brown color that affects the desire to buy, and showing the advantages of red that is more matched with fresh meat.
  • the light-emitting unit provided in this embodiment can be applied to various fresh lighting devices, such as, but not limited to, the lighting of fresh meat such as fresh pork and fresh beef.
  • the fresh lighting device can be selected from fresh lighting lamps, or electronic devices such as refrigerators and freezers with fresh lighting functions.
  • two types of light-emitting units are exemplified below in this embodiment.
  • FIG. 36 and FIG. 37 An exemplary light-emitting unit is shown in FIG. 36 and FIG. 37 , including an LED bracket 60 (the LED bracket shown in the above embodiments can be selected, and brackets with other structures can also be selected, which is not limited in this embodiment.) , a red LED chip 61 , a blue LED chip 62 and an encapsulation layer, wherein the encapsulation layer includes a green medium 63 .
  • the LED bracket 60 has a substrate on which both the red LED chips 61 and the blue LED chips 62 are disposed, and the green medium 63 covers the red LED chips 61 and the blue LED chips 62 .
  • the red LED chips 61 and the blue LED chips 62 excite the green medium 63 to emit white light.
  • the normalized spectrogram of the emitted white light satisfies the following conditions: the normalized spectrogram includes the first red light band and the green light band, the half-wave width of the first red light band is 15nm to 30nm, and the first red light band
  • the peak is the first peak, the relative optical power corresponding to the first peak is 0.9 to 1, and the wavelength corresponding to the first peak is 645 nm to 665 nm.
  • the red LED chip 61 can be selected as a vertical structure or a horizontal structure
  • the blue LED chip 62 can also be selected as a vertical structure or a horizontal structure.
  • the red LED chip 61 and the blue LED chip 62 are fixed on the bottom of the LED bracket 60 by a die-bonding glue, and are baked at 150° C. for 1-2 hours, so that the die-bonding glue is completely cured.
  • a die-bonding glue a die-bonding glue
  • a silicone resin transparent die-bonding adhesive is used
  • a silicone resin-doped silver-doped die-bonding adhesive is used.
  • the red LED chip 61, the blue LED chip 62 and the LED bracket 60 also need to be provided with bonding wires.
  • the bonding wires are generally 0.9 mil 80% Au, and M or S wire arc technology can be used.
  • the arrangement and connection method of the bonding wires are determined by the structure of the LED bracket 60 , the structure of the red LED chip 61 and the blue LED chip 62 , and the conduction of the circuit can be completed.
  • a red LED chip 61 with a vertical structure, a blue LED chip 62 with a horizontal structure, the bracket, the blue LED chip 62 and the red LED chip 61 are sequentially connected by bonding wires.
  • the normalized spectrum diagram includes the first red light band, and the half-wave width of the first red light band is 15 nm ⁇ 30 nm.
  • the half-wave width of the first red light band may be 15 nm, 18 nm, 24 nm, 27 nm, 30 nm, etc., preferably 30 nm, and the half-wave range is 640 nm-670 nm.
  • the wave crest of the first red light band is the first wave crest
  • the relative optical power corresponding to the first wave crest is 0.9 ⁇ 1
  • the wavelength corresponding to the first wave crest is 645 nm ⁇ 665 nm.
  • the relative light power (ie, relative light intensity) corresponding to the first wave peak is 0.9, 0.92, 0.95, 0.99, 1, etc., wherein 1 is preferred.
  • the wavelength corresponding to the first wave peak can be selected from 645 nm, 651 nm, 654 nm, 659 nm, 665 nm, etc., and preferably 660 nm.
  • the half-wave width of the excited first red light band is between 15 nm and 30 nm, so that the energy is more concentrated and the red light saturation is high.
  • the wavelength of the first peak of the first red light band is between 650nm and 670nm, the red light has strong penetrating power, and the color restoration of fresh meat is better.
  • the first peak of the first red light band The corresponding relative optical power is between 0.9 and 1, and the display effect of raw bright red is better.
  • the first red light band of the above parameters can reduce the generation of yellow light to a certain extent, and avoid the yellow light from affecting the demand for red saturation of fresh meat, thereby further improving the degree of color reproduction of fresh lighting and avoiding the appearance that affects the purchase.
  • the brown color of desire appears, which can show a red color that is more matched with fresh meat.
  • the normalized spectral graph also includes the green light band.
  • the half-wave width of the green light band is 35nm to 60nm.
  • the half-wave width of the green light band can be selected as 35 nm, 41 nm, 48 nm, 53 nm, 57 nm, 60 nm, etc., and preferably 60 nm, and the half-wave range is 510 nm ⁇ 570 nm.
  • the half-wave width of the light band When the half-wave width of the light band is below 35nm, the process cost is high, the color is easy to be out of tune, and the white color is easy to be distorted, which is not conducive to the color restoration of the white part of the fresh meat; if the half-wave width of the green light band is above 60nm, The proportion of white light occupied by the green light band is too large, which is easy to affect the red light, and the red light is easily distorted, which is not conducive to the color rendering of the red parts of fresh meat.
  • the peak of the green light band is the second peak, the relative optical power corresponding to the second peak is 0.2 to 0.4, and the wavelength corresponding to the second peak is 530 nm to 550 nm.
  • the relative optical power corresponding to the second peak can be selected as 0.2, 0.24, 0.29, 0.34, 0.38, 0.4, and the like.
  • the wavelength corresponding to the second wave peak can be selected from 530 nm, 532 nm, 538 nm, 544 nm, 550 nm, etc., and preferably 540 nm.
  • the normalized spectrum further includes the yellow light band, the wavelength range corresponding to the yellow light band is 585 nm-630 nm, and the relative optical power of the yellow light wave valley is lower than 0.15.
  • the left side of the yellow light band is connected to the green light band, and the right side is connected to the red light band.
  • the yellow light band is concave, that is, the relative optical power corresponding to the left and right sides of the yellow light band is higher than the relative optical power corresponding to the middle.
  • the generation of yellow light is further reduced, avoiding the yellow light affecting the demand for red saturation of fresh meat, resulting in the appearance of brown color, which is conducive to showing the appearance of fresh meat.
  • the class is more matching red.
  • the normalized spectrogram also includes a blue light band, and the half-wave width of the blue light band is 15 nm to 30 nm.
  • the half-wave width of the blue light band can be 15 nm, 17 nm, 19 nm, 22 nm, 26 nm, 29 nm, 30 nm, etc., preferably 15 nm, and the half-wave range is 435 nm-465 nm.
  • the half-wave width of the blue light band is below 15 nm, the manufacturing process is difficult and the requirements for the wafer substrate are very high.
  • the half-wave width of the blue light band is more than 30nm, the overall brightness of the chip will drop a lot, and it is easy to cause the white light to be misaligned and appear pale, which is not conducive to the freshness of the white part.
  • the peak of the blue light band is the third peak, the relative optical power corresponding to the third peak is 0.3-0.5, and the wavelength corresponding to the third peak is 445nm-455nm.
  • the relative optical power of the third wave peak can be selected as 0.3, 0.34, 0.39, 0.44, 0.5, and the like.
  • the wavelength corresponding to the third wave peak can be selected from 445 nm, 447 nm, 449 nm, 451 nm, 452 nm, 454 nm, 455 nm, etc., among which 450 nm is preferred.
  • the wavelength corresponding to the second peak is between 445nm and 455nm, which can better produce white that meets the freshness requirements of the white part.
  • the relative optical power corresponding to the first peak in the red light band is between 0.9 and 1
  • the relative optical power corresponding to the green band is between 0.2 and 0.4
  • the relative optical power corresponding to the third peak in the blue band is between 0.9 and 1.
  • the normalized spectrum further includes the cyan light band, the corresponding wavelength range of the cyan light band is 465 nm-515 nm, and the relative optical power of the cyan light wave trough is lower than 0.1.
  • the left side of the cyan light band is connected to the blue light band, and the right side is connected to the green light band.
  • the cyan wavelength band is concave, that is, the relative optical power corresponding to the left and right sides of the cyan wavelength band is higher than the relative optical power corresponding to the middle.
  • the normalized spectrum diagram also includes the violet light band, the wavelength range corresponding to the violet light band is 350nm-420nm, and the relative optical power of the violet light band is lower than 0.1.
  • the violet light band is connected to the left side of the blue light band.
  • the violet light band decreases with the decrease of the corresponding wavelength (it is basically unchanged after decreasing to a certain extent).
  • the normalized spectrum further includes a second red light band adjacent to the first red light band, the wavelength range corresponding to the second red light band is 680nm-780nm, and the second red light band is in the range of 680nm-780nm.
  • the relative optical power of the optical band is lower than 0.1.
  • the left side of the second red light band is connected to the first red light band.
  • the material of the green medium 63 includes ⁇ -Sialon
  • the material of the blue LED chip 62 includes gallium nitride (GaN)
  • the material of the red LED chip 61 includes aluminum gallium phosphide.
  • Indium (AlGaInP) It can be understood that the above material selection can determine the half-wave widths of the red, blue and green wavelengths and the wavelength positions corresponding to the peaks, which is beneficial to obtain white light conforming to the normalized spectrum provided by the embodiments of the present invention.
  • the light-emitting unit further includes an encapsulation colloid 64 filled in the bowl 65 , and the mixing ratio of the green medium 63 and the encapsulation colloid 64 ranges from 1:12 to 1:2.
  • the mixing ratio of the green medium 63 and the encapsulation colloid 64 can be selected as 1:12, 1:11, 1:10.5, 1:8, 1:6.5, 1:4.5, 1:3, 1:2, and the like.
  • the encapsulating colloid 64 and the green medium 63 are shaken by a mixer to complete the mixing evenly.
  • the stirring conditions can be selected as 200s to 400s and the speed is 1000n/min to 2000n/min. This setting is conducive to mixing the encapsulation colloid 64 and the green medium 63 evenly.
  • the mixture of the encapsulating glue 64 and the green medium 63 is potted in the bowl 65 of the LED holder 60 , the mixture is cured by baking at 150° C. for 3-4 hours to complete the encapsulation. It can be understood that by satisfying the mixing ratio of the green medium 63 and the encapsulation glue 64 between 1:12 and 1:2, it is beneficial to adjust the heights (relative optical power) of the first wave peak, the second wave peak and the third wave peak. , to further precisely define the radiance distribution of the spectrum.
  • the distribution range of white light on the X-axis is 0.31-0.39
  • the distribution range on the Y-axis is 0.3-0.4
  • the color temperature range of white light is 4000K ⁇ 7000K
  • the color temperature can be selected as 4000K, 4300K, 4500K, 4900K, 5120K, 5870K, 6370K and 7000K.
  • another exemplary light-emitting unit includes an LED bracket 70 , a blue LED chip 71 , a red medium 72 and a green medium 73 .
  • the LED bracket 70 has a cup 75 , the blue LED chip 71 is disposed in the cup 75 , the red medium 72 and the green medium 73 are mixed and filled in the cup 75 and cover the blue LED chip 71 .
  • the blue LED chip 71 excites the red medium 72 and the green medium 73 to emit white light.
  • the blue LED chip 71 in this example can be a front-loading structure or a flip-chipping structure.
  • the blue LED chip 71 can be fixed on the LED bracket 70 by a die-bonding glue, and then baked at 150° C. for 1-2 hours to completely cure the die-bonding glue.
  • the blue LED chip 71 can be fixed on the LED bracket 70 by high-temperature solder paste, and reflow soldering.
  • the maximum furnace temperature of reflow soldering is 290°C, and the time is about 30s, and it needs to be performed in a nitrogen environment. The solder is completely melted and fully adhered to the blue LED chip 71 and the LED bracket 70 .
  • the bonding wire is generally 0.9 mil 80% Au, and the S or M wire arc process is used.
  • the arrangement and connection method of the bonding wires are determined by the structure of the LED bracket 70 and the structure of the blue LED chip 71 , and the conduction of the circuit can be completed.
  • the normalized spectrogram of white light in this example satisfies the following conditions:
  • the spectrogram includes the red light band and the green light band.
  • the half-wave width of the red light band is 80nm to 100nm, and the peak of the red light band is the first wave peak.
  • the wavelength of the green light band is 645nm ⁇ 665nm, the half-wave width of the green light band is 45nm ⁇ 70nm, the peak of the green light band is the second peak, and the wavelength corresponding to the second peak is 500nm ⁇ 520nm.
  • the half-wave width of the red light band can be 80 nm, 84 nm, 86 nm, 89 nm, 94 nm, 96 nm, 100 nm, etc., preferably 100 nm, and the half-wave range is 610 nm-710 nm.
  • the relative optical power corresponding to the first wave peak can be selected as 0.75, 0.79, 0.84, 0.89, 0.93, 0.95, etc.
  • the wavelength corresponding to the first wave peak can be selected from 645 nm, 646 nm, 649 nm, 653 nm, 659 nm, 663 nm, 665 nm, etc., preferably 660 nm.
  • the half-wave width of the green light band can be selected from 45 nm, 46 nm, 49 nm, 53 nm, 55 nm, 61 nm, 67 nm, 69 nm, 70 nm, etc., preferably 70 nm, and the half-wave range is 480 nm to 550 nm.
  • the wavelengths corresponding to the second peak can be selected from 500 nm, 503 nm, 509 nm, 511 nm, 516 nm, 519 nm, 520 nm, and the like.
  • the half-wave width of the green light band is below 45nm, the process cost is high, the color is easy to be out of tune, and the white color is easy to be distorted, which is not conducive to the color restoration of the white part of the fresh meat;
  • the wavelength is above 70nm, the proportion of white light occupied by the green light band is too large, which interferes with the red light, and the red color is easily distorted, which is not conducive to the color rendering of the red part of the fresh meat.
  • the wavelength corresponding to the first peak of the excited red light band is between 645nm and 665nm, and the red light has strong penetrating power, which is very suitable for fresh food.
  • the color and luster are restored better, the relative optical power corresponding to the first wave peak is between 0.75 and 0.95, and the red display effect is better.
  • the wavelength corresponding to the second peak of the green light band is between 500nm and 520nm, and the half-wave width of the green light band is between 45nm and 70nm.
  • the green light band is not easy to interfere with the red light band and is not easy to produce yellow light. Avoid yellow light affecting the demand for red saturation of fresh meat, so as to further improve the degree of color reduction of fresh lighting, avoid the appearance of brown color that affects the desire to buy, and can present a red color that is more matched with fresh meat.
  • the relative optical power corresponding to the second peak is 0.4-0.7.
  • the relative optical power corresponding to the second peak can be selected as 0.4, 0.5, 0.6, 0.7, and the like.
  • the normalized spectrum diagram further includes the yellow light band, the wavelength range corresponding to the yellow light band is 560 nm-590 nm, and the relative optical power of the yellow light wave valley is 0.05-0.25.
  • the left side of the yellow light band is connected to the green light band, and the right side is connected to the red light band.
  • the yellow light band is concave, that is, the relative optical power corresponding to the left and right sides of the yellow light band is higher than the relative optical power corresponding to the middle.
  • the normalized spectrogram also includes a blue light band, and the half-wave width of the blue light band is 15 nm to 30 nm.
  • the half-wave width of the blue light band can be 15 nm, 17 nm, 19 nm, 22 nm, 26 nm, 29 nm, 30 nm, etc., preferably 15 nm, and the half-wave range is 435 nm-465 nm.
  • the half-wave width of the blue light band is below 15 nm, the manufacturing process is difficult and the requirements for the wafer substrate are very high.
  • the half-wave width of the blue light band is more than 30nm, the overall brightness of the chip will drop a lot, and it is easy to cause the white light to be misaligned and appear pale, which is not conducive to the freshness of the white part.
  • the wave crest of the blue light band is the third wave crest
  • the relative optical power corresponding to the third wave crest is 0.9-1
  • the wavelength corresponding to the third wave crest is 445nm-455nm.
  • the relative optical power of the third wave peak can be selected as 0.9, 0.91, 0.93, 0.96, 0.98, 1, etc., preferably 1.
  • the wavelength corresponding to the third wave peak can be selected from 445 nm, 447 nm, 449 nm, 451 nm, 452 nm, 454 nm, 455 nm, etc., among which 450 nm is preferred.
  • the wavelength corresponding to the third peak is between 445nm and 455nm, which can better produce white that meets the freshness requirements of white parts.
  • the relative optical power corresponding to the first peak in the red light band is between 0.75 and 0.95
  • the relative optical power corresponding to the green band is between 0.4 and 0.7
  • the relative optical power corresponding to the third peak in the blue band is between 0.75 and 0.95.
  • the normalized spectrum further includes the cyan wavelength band, the wavelength range corresponding to the cyan wavelength band is 460 nm-490 nm, and the relative optical power of the cyan wavelength valley is 0.15-0.35.
  • the left side of the cyan light band is connected to the blue light band, and the right side is connected to the green light band.
  • the cyan wavelength band is concave, that is, the relative optical power corresponding to the left and right sides of the cyan wavelength band is higher than the relative optical power corresponding to the middle.
  • the normalized spectrum diagram also includes the violet light band, the wavelength range corresponding to the violet light band is 350nm-420nm, and the relative optical power of the violet light band is lower than 0.1.
  • the violet light band is connected to the left side of the blue light band.
  • the violet light band decreases with the decrease of the corresponding wavelength (it is basically unchanged after decreasing to a certain extent).
  • the normalized spectrogram also includes an infrared light band adjacent to the red light band, the wavelength corresponding to the infrared light band is greater than 780 nm, and the relative optical power of the infrared light band is lower than 0.1. Specifically, the left side of the infrared light band is connected to the red light band. By satisfying that the relative optical power in the infrared light band is lower than 0.1, it is beneficial to improve the saturation of the red light, thereby improving the freshness effect of the red part.
  • the material of the red medium 72 includes nitride
  • the material of the green medium 73 includes ⁇ -Sialon and/or silicate
  • the material of the blue LED chip 71 includes gallium nitride (GaN).
  • the green medium 73 may include only one of ⁇ -Sialon and silicate, or may include both ⁇ -Sialon and silicate. It can be understood that the above material selection can determine the half-wave widths of the red, blue and green wavelengths and the wavelength positions corresponding to the peaks, which is beneficial to obtain white light conforming to the normalized spectrum provided by the embodiments of the present invention.
  • the ratio of the red medium 72 to the green medium 73 ranges from 1:13 to 1:4.
  • the ratio of the red medium 72 to the green medium 73 can be selected as 1:13, 1:12, 1:9, 1:7, 1:6, 1:5, 1:4.5, 1:4, and the like.
  • the light-emitting unit further includes an encapsulating glue 50 filled in the bowl 75 .
  • the ratio of the mixture of the red medium 72 and the green medium 73 to the encapsulation colloid 50 ranges from 1:8 to 1:1.8.
  • the ratio of the mixture of the red medium 72 and the green medium 73 to the encapsulating glue 50 can be selected as 1:8, 1:7, 1:6, 1:5.5, 1:5, 1:4.5, 1:3, 1:2 and 1:1.8 etc.
  • the mixture of the red medium 72 and the green medium 73 and the encapsulating colloid 50 are shaken by a mixer to complete the mixing evenly.
  • the stirring conditions can be selected as 200s to 400s and the speed is 1000n/min to 2000n/min. 50 and green medium 73 are mixed well.
  • the mixture of the encapsulating glue 50 and the green medium 73 is potted in the bowl 75 of the LED holder 70 , the mixture is cured by baking at 150° C. for 3-4 hours to complete the encapsulation. It can be understood that by satisfying the mixing ratio of the green medium 73 and the encapsulation glue 50 between 1:12 and 1:2, it is convenient to adjust the heights of the first wave peak, the second wave peak and the third wave peak, which is conducive to further precision. Defines the radiance distribution of the spectrum.
  • the distribution range of white light on the X-axis is 0.32-0.38
  • the distribution range on the Y-axis is 0.275-0.34
  • the color temperature range of the white light is 4000K-6200K.
  • the color temperature can be selected from 4000K, 4230K, 4500K, 4900K, 5120K, 5530K, 5870K, and 6200K.
  • Embodiment 7 is a diagrammatic representation of Embodiment 7:
  • the backlight module is one of the key components of the display unit, which is used to provide the light source for the display unit.
  • Thinness, power saving, and HDR High-Dynamic Range, high dynamic range image
  • the LED light-emitting unit in the backlight module has the performances of small size, high brightness and large light-emitting angle.
  • the light-emitting angle of the LED chip is limited by the LED bracket, which limits the light-emitting angle of the LED chip, thereby affecting the overall light-emitting brightness and light-emitting angle of the LED light-emitting unit.
  • the mixing distance of the light-emitting surface of the backlight module or the increase of the number of LEDs to increase the luminous brightness and increase the luminous angle cannot meet the needs of the display device to be thin and power-saving. Therefore, how to increase the luminous angle of the LED light-emitting unit becomes issues that need to be addressed urgently.
  • this embodiment provides a light-emitting unit that can improve the light-emitting angle, which includes an LED chip and an LED bracket.
  • the LED bracket in this embodiment can use the LED bracket shown in the above embodiments, or can use Other LED brackets having a bowl-cup structure are not limited in this embodiment.
  • the LED chip is arranged on the bottom of the bowl of the LED bracket and the positive and negative electrodes of the LED chip are respectively electrically connected to the two conductive areas.
  • the light-emitting unit further includes an encapsulation layer disposed in the bowl, the encapsulation layer includes a first encapsulation adhesive layer and a second encapsulation adhesive layer filled in sequence, the first encapsulation adhesive layer wraps the LED chip, and the second encapsulation adhesive layer is far away from the LED chip
  • the light emitted from the surface of the LED chip is refracted to the outside of the LED device through the first encapsulation adhesive layer and the spherically protruding second encapsulation adhesive layer, and the side of the second encapsulation adhesive layer away from the LED chip is spherical
  • the protruding shape increases the light-emitting angle of the LED device, thereby improving the overall light-emitting angle, and while increasing the light-emitting angle, the light-emitting brightness of the LED device is improved.
  • this embodiment is described below with reference to several examples shown in the accompanying drawings.
  • an example of the light-emitting unit provided in this embodiment includes: an LED bracket 8 .
  • the LED bracket 8 includes a positive electrode substrate 81 (ie, one of the conductive areas), a negative electrode substrate 82 (ie, the other conductive area), and the positive electrode substrate 82 .
  • 81 is insulated from the negative substrate 82 and the isolation area 83 also includes LED chips 84; the package body of the LED bracket 8 is arranged on the surfaces of the positive substrate 81 and the negative substrate 82 and is enclosed to form a cup, and the LED chips 84 are arranged on the positive substrate 81 and the negative substrate 82.
  • the positive electrode substrate 81 and the negative electrode substrate 82 is filled with a first encapsulating adhesive layer 85, a second encapsulating adhesive layer 86, and a first encapsulating adhesive layer 85 in turn.
  • the LED chip 84 is covered, and the side of the second encapsulation adhesive layer 86 away from the LED chip 84 is in a spherical convex shape.
  • the first encapsulation adhesive layer and the second encapsulation adhesive layer 86 can isolate water vapor and protect the LED chip 84.
  • the first encapsulating adhesive layer 85 and the second encapsulating adhesive layer 86 refract, reflect and diffuse the light emitted by the LED chip 84, thereby refracting the light emitted from the surface of the LED chip 84 to the surrounding, increasing the light emitting angle of the light emitting unit.
  • the second encapsulating adhesive layer 86 completely covers the first encapsulating adhesive layer 85, as shown in FIG. 42; wherein the first encapsulating adhesive layer 85 and/or the second encapsulating adhesive layer 86 may be formed by curing transparent glue Transparent glue layer, the transparent glue includes but is not limited to epoxy resin, silica gel, silicone resin, etc.
  • the first encapsulation glue layer 85 and/or the second encapsulation glue layer 86 can also be formed by mixing transparent glue and phosphor powder and then curing fluorescent glue layer.
  • the positive electrode substrate 81 and the negative electrode substrate 82 in this example are both conductive substrates, and the conductive substrates in this embodiment can be substrates made of various conductive materials, such as various metal conductive substrates, including but not It is limited to one of copper substrates, aluminum substrates, iron substrates, silver substrates, etc.; the conductive substrate can also be a mixed material conductive substrate containing conductive materials, such as conductive rubber, etc.
  • Chip 84 is mounted on at least one conductive substrate.
  • the LED chip 84 may be a front mounted LED chip, which can be electrically connected to the substrate through bonding wires, or a flip-chip LED chip, which can be electrically connected to the substrate through a eutectic process.
  • the light-emitting surface of the LED chip 84 is covered with reflective layers of different thicknesses. According to different requirements, reflective layers of different materials and thicknesses can be used to increase the half-power angle of the chip's light output, thereby further increasing the light-emitting angle of the light-emitting unit.
  • the height h of the bowl-shaped structure formed by the first encapsulant layer 85 on the LED bracket 8 and the positive electrode substrate 81 and the negative electrode substrate 82 does not exceed the height H of the package body.
  • the first encapsulation adhesive layer 85 covers the LED chip 84, so the minimum height h of the first encapsulation adhesive layer 85 in the bowl structure exceeds the height h1 of the LED chip 84; in some application scenarios, the first encapsulation adhesive layer 85 is in the bowl.
  • the lowest height h in the structure is to cover the bonding wire, it should be understood that when covering the bonding wire, it covers the LED chip 84; wherein, the first encapsulation adhesive layer 85 completely covers the LED chip 84, and the light emitted from the surface of the LED chip 84 is covered. They are respectively refracted and diffused onto the second encapsulation adhesive layer 86 and the LED bracket 8 , thereby increasing the light exit angle of the LED chip 84 .
  • the upper surface of the first encapsulation adhesive layer 85 is flush with the upper surface of the LED bracket.
  • the surface of the first encapsulation adhesive layer 85 away from the LED chip 84 may be a concave arc surface toward the LED chip 84 , and the concave arc surface of the first encapsulation adhesive layer 85 can change the reflection angle of light and the refraction angle, making it easier for the light to hit the LED bracket 8 and the second sealing layer 86, so that the light output of the light-emitting unit is more uniform, as shown in Figure 43 and Figure 44, and the light-emitting angle of the light-emitting unit is increased.
  • the lowest height of the first encapsulation adhesive layer 85 after being concave is flush with the LED chip 84; it should be understood that the first encapsulation adhesive layer 85 may be directly concave from the place where it contacts with the LED bracket 8. , or the first encapsulating adhesive layer 85 starts to be inwardly concave after being kept horizontal for a period of time from the transparent support; it should be understood that, in some examples, the first encapsulating adhesive layer 85 is a horizontal structure, and it is not concave.
  • the width E of the second encapsulant layer 86 is not greater than the width e of the upper surface of the bowl-shaped structure, and the second encapsulant layer 86 is further limited on the bowl-like structure of the light-emitting unit to improve its bonding Strength, as shown in FIG.
  • the width E of the second encapsulation adhesive layer 86 is at least the width E1 of the surface of the first encapsulation adhesive layer 85 away from the LED chip 84, and then completely covers the first encapsulation adhesive layer 85, The first encapsulation adhesive layer 85 completely covers the LED chip 84, and the light emitted from the surface of the LED chip 84 is refracted and diffused to the second encapsulation adhesive layer 86 and the LED bracket 8 respectively.
  • the emitted light is refracted to the second encapsulation adhesive layer 86, and the second encapsulation adhesive layer 86 is further refracted and diffused to increase the light exit angle of the LED chip 84; it should be understood that when the first encapsulation adhesive layer 85 is concave , the surface of the second encapsulating adhesive layer 86 close to the first encapsulating adhesive layer 85 protrudes toward the first encapsulating adhesive layer 85, and the protruding part matches the inner recess of the first encapsulating adhesive layer 85, as shown in FIG. 43 and FIG. 44 .
  • the side of the second encapsulation adhesive layer 86 away from the LED chip 84 has a spherical convex shape, forming a convex lens shape, which can diffuse light, thereby increasing the light emitting angle of the light-emitting unit; wherein, the second encapsulating adhesive layer
  • the height of the second encapsulation adhesive layer 86 is not limited, that is, the convex curvature of the second encapsulation adhesive layer 86 is not restricted.
  • the height K so that the outward convex arc of the second package angle is within a reasonable range.
  • the refractive index of the first encapsulating adhesive layer 85 is higher than the refractive index of the second encapsulating adhesive layer 86
  • the refractive index of the second encapsulating adhesive layer 86 is higher than the refractive index of air, so that the LED chip is
  • the light emitted by 84 is refracted by the first encapsulation adhesive layer 85 and then reaches the second encapsulation adhesive layer 86, and then refracted by the second encapsulation adhesive layer 86 to reach the outside world, thereby refracting more light emitted from the front surface of the LED chip 84 to the surrounding area.
  • the package body forming the bowl and cup of the LED bracket 8 may be, but not limited to, a transparent bracket; that is, the LED bracket 8 may be made of a transparent material, such as transparent resin, transparent thermoplastic such as PPA (Polyphthalamide, Polyphthalamide).
  • a transparent bracket such as transparent resin, transparent thermoplastic such as PPA (Polyphthalamide, Polyphthalamide).
  • the LED bracket 8 can be made of materials used in non-transparent brackets, such as epoxy resin (EP, Epoxide resin), high temperature nylon (PPA plastic), polyphthalamide (PPA, Polyphthalamide), polyterephthalamide 1,4-cyclohexanedimethanol formate (PC T, Poly 1 , 4-cy c l o h e x y l e n e d i m e t h y l e n terephthalate), liquid crystal polymer (LCP, Liquid Crystal Polymer), sheet molding compound (SMC, Sheetmolding) compound), epoxy molding compound (EM)
  • the LED chip 84 is provided with a DBR (distributed bragg reflectors, distributed Bragg reflectors); for example, DBR is plated on the front of the LED chip 84 to reduce the front light output and increase the side wall light output area, thereby further increasing the light emitting angle, and then matching the transparent LED bracket 8 to improve the side of the light emitting unit.
  • DBR distributed bragg reflectors, distributed Bragg reflectors
  • the upper surface of the LED bracket 8 is serrated C. As shown in FIG. 46 and FIG. 47 , the upper surface of the LED bracket 8 is serrated so that when the second encapsulant layer 86 is combined with the LED bracket 8 , the upper surface of the LED bracket 8 is serrated. , to enhance the bonding ability of the second encapsulation adhesive layer 86 and the LED bracket 8 ; at the same time, the zigzag upper surface of the LED bracket 8 can limit the fluidity of the second encapsulation adhesive layer 86 and achieve the purpose of controlling the formation of the second encapsulation adhesive layer 86 .
  • the LED chips 84 include at least one of red LED chips, green LED chips, blue LED chips, and yellow LED chips.
  • the specific settings can be flexibly set according to application requirements, which will not be repeated here.
  • the insulating region 83 may also be provided as, but not limited to, an insulating insulating tape.
  • the insulating insulating tape is located between the positive electrode substrate 81 and the negative electrode substrate 82 to insulate and isolate the two. It should be understood that the insulating tape
  • the material of the isolation belt and the material of the LED bracket 8 may be the same or different.
  • the first encapsulation adhesive layer 85 covers the LED chip 84 , and the upper surface of the first encapsulation adhesive layer 85 is connected to the LED chip 84 .
  • the top surface of the LED bracket is flush, and the surface of the first encapsulation adhesive layer 85 away from the LED chip 84 is an arc surface concave to the LED chip 84.
  • the width of the second encapsulation adhesive layer 86 is the same as the width of the upper surface of the bowl-shaped structure.
  • the first encapsulating adhesive layer 85 is covered, and the surface of the second encapsulating adhesive layer 6 close to the first encapsulating adhesive layer 85 protrudes toward the first encapsulating adhesive layer 85 , and the protruding part matches the inner recess of the first encapsulating adhesive layer 85 .
  • the side of the second encapsulation adhesive layer 86 away from the LED chip 84 has a spherical convex shape, forming a convex lens shape, which can diffuse light and increase the light emitting angle of the light emitting unit.
  • This embodiment also provides a light-emitting assembly, which can be, but is not limited to, a backlight module, including a driving circuit and the above-mentioned light-emitting unit, the driving circuit is connected to the light-emitting unit, and the backlight module has a larger light-emitting angle, Therefore, the display effect can be improved, and fewer light-emitting units can be arranged under the same circuit board area to achieve the same or even better display effect, and the cost is lower.
  • This embodiment also provides a display unit, including the above-mentioned backlight module and a backplane, and the driving circuit of the backlight module and the light-emitting unit are arranged on the backplane.
  • Embodiment 8 is a diagrammatic representation of Embodiment 8
  • This embodiment provides a light-emitting component, which can be, but is not limited to, a backlight module, a lighting module, etc., which includes a circuit board and a light-emitting device disposed on the circuit board and electrically connected to a corresponding circuit on the circuit board unit.
  • the light-emitting unit in this embodiment may use the light-emitting unit shown in the above embodiments, or may use a light-emitting unit with other structures (eg, bracket-free LED), which is not limited in this embodiment.
  • the backlight module When the light-emitting component is a backlight module, the backlight module is widely used in folding display screens. In the process of multiple bending and recovery bending of the backlight module of the prior art, the flexible circuit board used in the backlight module is prone to relative displacement with the support plate on the back, so that the part of the backlight module cannot be used. Parts protected by effective supports. In response to this problem, an example of this embodiment provides a backlight module that can solve the problem.
  • the circuit board of the backlight module in this example is a flexible circuit board, and the backlight module further includes a support plate and a magnetic Paste, the flexible circuit board includes a reinforcing plate and a base plate, the reinforcing plate is fixed on the base plate, the support plate is provided with a support groove, and the support groove accommodates at least part of the reinforcing plate, that is, the reinforcing plate can be integrally arranged in the supporting groove It is also possible to set only a part in the support groove and a part outside the support groove.
  • the support groove is provided with an open end facing the base plate, the open end of the support groove is covered by the base plate, the support groove is also provided with a groove bottom surface, the magnetic sticker is fixed on the bottom surface of the groove, and the magnetic sticker and the reinforcing plate are opposite and parallel to each other, The magnetic sticker and the reinforcing plate are magnetically attracted to ensure that the flexible circuit board and the support plate are restored to the unbent state through the two magnets that are magnetically attracted to each other during the multiple bending and recovery bending process of the backlight module. state, which improves the structural stability of the backlight module.
  • this embodiment is described below with reference to the examples shown in the accompanying drawings.
  • the thickness of the support plate can be set to be greater than the height of the support groove.
  • the flexible circuit board 90 has a base plate 901 , a pad 903 , a light-emitting unit 904 and a reinforcing plate 905
  • the base plate 901 includes a welding part 902
  • the welding part 902 is provided with a first The surface 9021 and the second surface 9022 opposite to the first surface 9021
  • the pads 903 are fixed on the first surface 9021
  • the light-emitting unit 904 is fixed on the first surface 9021
  • the pin pairs of the light-emitting unit 904 are stacked with the corresponding pads 903
  • the reinforcing plate 905 is attached and fixed to the second surface 9022 of the welding portion 902
  • the reinforcing plate 905 is arranged corresponding to the pad 903 .
  • the flexible circuit board 90 can achieve the functions of bending and conducting electricity.
  • the light-emitting unit 904 is fixed to the flexible circuit board 90 by fixing the pins at both ends of the vital element to the flexible circuit board 90.
  • the bending resistance of the light-emitting unit 904 is smaller than the bending force used to bend the flexible circuit board 90, and the flexible circuit board 90 does not have any protection for the bending-resistance of the light-emitting unit 904.
  • the light-emitting unit 904 is easily broken by the bending force.
  • the reinforcing plate 905 is attached and fixed to the side of the flexible circuit board 90 away from the light-emitting unit 904 .
  • the reinforcing plate 905 is made of hard material, and the reinforcing plate 905 is attached to the welding portion 902 , so that the flexible circuit board 90 can be bent.
  • the bending force is transmitted to the reinforcing plate 905, the internal stress of the reinforcing plate 905 is used to offset the bending force used to bend the flexible circuit board 90, the welding part 902 will not be bent, and the light-emitting unit 904 is fixed on the first surface 9021,
  • the light emitting unit 904 and the reinforcing plate 905 are arranged correspondingly, so that the light emitting unit 904 located on the first surface 9021 will not be broken.
  • the reinforcing plate 905 can strengthen the hardness of the welding part 902 , so that the light emitting unit 904 fixed on the welding part 902 is prevented from being subjected to bending force, so that the light emitting unit 904 will not be damaged by the bending of the flexible circuit board 90 .
  • the flexible circuit board 90 includes a conductive layer 906, the conductive layer 906 is disposed on the first surface 9021, and the conductive layer 906 can conduct the light-emitting units 904 arranged in an array.
  • the function of the conductive layer 906 is to realize the lead-out of the electrodes of the light-emitting unit 904.
  • the material of the conductive layer 906 can be tin, which can play a good conductive role, and the tin can easily connect the pad 903 to the substrate.
  • the welding and fixing of the board 901 can of course be replaced with other conductive materials such as silver, copper, aluminum, and gold.
  • the reinforcing plate 905 can be made of a magnetic material.
  • the advantage is that the external device is provided with a corresponding metal material.
  • the reinforcing plate 905 has magnetic attraction, and the flexible circuit board 90 can be directly mounted on the support plate 912 .
  • the reinforcing plate 905 has the advantages of easy installation, simple process, and material saving, no need to add other fixing accessories, and thus also reduces the production cost.
  • the flexible circuit board 90 in this embodiment When the flexible circuit board 90 in this embodiment is applied to a folding screen, the characteristics of the folding screen require certain telescopic characteristics, and the flexible circuit board 90 is not damaged.
  • the traditional gluing and fixing method is to fix the flexible circuit board 90 on the support. After the board is assembled, when the flexible circuit board 90 is bent or folded, the welding portion 902 will be subjected to a large tensile force, which may cause the circuit breakage of the flexible circuit board 90 .
  • a magnetic material is used as the reinforcing plate 905.
  • the reinforcing plate 905 is fixed to the supporting plate 912 by magnetic attraction, and the plurality of welding parts 902 are magnetically fixed to the supporting plate 912.
  • the reinforcing plate 905 When the screen is bent or folded, Because the reinforcing plate 905 is fixed by magnetic attraction, it has a better buffering effect than the fixing method by gluing, and can also play a protective role for the flexible circuit board 90 .
  • the present application also provides a light-emitting assembly
  • the light-emitting assembly may be a backlight module 91
  • the backlight module 91 includes a flexible circuit board 90 , a support plate 912 and a magnetic sticker 913
  • the flexible circuit board 90 includes reinforcing
  • the plate 905 and the base plate 901 the reinforcement plate 905 is fixed to the base plate 901
  • the support plate 912 is provided with a support slot 9121
  • the support slot 9121 accommodates at least part of the reinforcement plate 905
  • the open end of the support groove 9121 is covered by the base plate 901.
  • the support groove 9121 is also provided with a groove bottom surface 9124.
  • the magnetic sticker 913 is fixed on the groove bottom surface 9124.
  • the sticker 913 is magnetically matched with the reinforcing plate 905.
  • the support plate 912 is used to fix the flexible circuit board 90.
  • the support plate 912 and the flexible circuit board 90 are directly attached and fixed. When applied to a folding screen or a curved screen, the support plate 912 can easily cause the flexible circuit board 90 to break. , there is a great hidden danger to the quality of the product.
  • the support plate 912 is provided with a plurality of support grooves 9121 corresponding to the plurality of welding portions 902 of the flexible circuit board 90 , and the groove bottom surface 9124 of the support groove 9121 is parallel to the second surface 9022 .
  • the flexible circuit board 90 is correspondingly mounted on the support plate 912, and the magnetic sticker 913 is made of a material with a magnetic substance.
  • the magnetic sticker 913 can be a magnet, and the side of the magnetic sticker 913 facing the reinforcing plate 905 and the reinforcing plate 905
  • the magnetic poles are opposite, that is, the N pole of the magnetic sticker 913 faces the S pole of the reinforcing plate 905, or the S pole of the magnetic sticker 913 faces the N pole of the reinforcing plate 905, and the side of the magnetic sticker 913 away from the reinforcing plate 905 is attached Fixed on the bottom surface 9124 of the groove, there is a magnetic force attracting each other between the magnetic sticker 913 and the reinforcing plate 905 , thereby fixing the flexible circuit board 90 and the support plate 912 .
  • the magnetic sticker 913 is fixed to the support plate 912
  • the reinforcing plate 905 is fixed to the light emitting unit 904
  • the reinforcing plate 905 and the magnetic sticker 913 are magnetically fixed
  • the reinforcing plate 905 and the magnetic sticker 913 are attached to each other.
  • the side wall of the support groove 9121 has a groove side 9122 close to its notch, and also has a board surface 9123 connecting the groove side 9122 and located between the notch and the groove bottom surface of the support groove 9121, as shown in the figure, in this example
  • the middle veneer surface 9123 is formed as a stepped surface, there is a gap between the veneer surface 9123 and the groove bottom surface 9124, there is a gap between the reinforcing plate 905 and the groove side 9122, and the reinforcing plate 905 is attached to the veneer surface 9123.
  • the support plate 912 in this embodiment is provided with a support groove 9121 corresponding to the welding portion 902, and a magnetic sticker 913 is added to be accommodated in the support groove 9121.
  • This embodiment is more environmentally friendly and does not require the process of the encapsulation process. , the production cost is reduced, and the flexible circuit board 90 and the support plate 912 are fixed by magnetic attraction, and the flexible circuit board 90 and the support plate 912 are directly placed correspondingly to complete the assembly, which simplifies the assembly process of installation.
  • the purpose of arranging the groove side 9122 and the sticker surface 9123 is that when the flexible circuit board 90 and the support plate 912 are staggered, the flexible circuit board 90 can move along a plane parallel to the magnetic sticker 913, and the sticker surface 9123 is attached to the reinforcing plate 905, That is, the reinforcing plate 905 is located between the flexible circuit board 90 and the mounting surface 9123 and the side surface 9122 of the groove.
  • the reinforcing plate 905 and the supporting plate 912 move relatively, the reinforcing plate 905 drives the flexible circuit board 90 along parallel to the second surface 9022.
  • the direction of movement ensures the bonding of the flexible circuit board 90 and the support plate 912, thereby preventing the folding screen or curved screen from displaying unevenly or displaying spots in the light during the process of folding the screen or the curved screen.
  • the reinforcing plate 905 is provided with a third surface 9051 and a fourth surface 9052, the third surface 9051 is attached to the second surface 9022 of the flexible circuit board 90, and the fourth surface 9052 faces the magnetic sticker 913, and the magnetic
  • the sticker 913 has a fifth surface 9131 and a sixth surface 9132, the fifth surface 9131 faces the reinforcing plate 905, and the sixth surface 9132 fits the bottom surface 9124 of the groove.
  • the area of the fifth surface 9131 is smaller than that of the fourth surface 9052 , the effect is that the magnetic range between the reinforcing plate 905 and the magnetic sticker 913 is larger, and the reinforcing plate 905 is attracted by the magnetic sticker 913 wider range.
  • the range of relative movement between the flexible circuit board 90 and the support plate 912 is also larger, so that the bending degree of the folded screen or the curved screen is larger.
  • the part where the reinforcing plate 905 and the flexible circuit board 90 are attached is the third surface 9051 , that is, the area of the third surface 9051 is the protection area of the reinforcing plate 905 for the flexible circuit board 90 . Therefore, increasing the area of the third surface 9051 can increase the protection of the flexible circuit board 90 , but is not conducive to the folding of the backlight module 91 .
  • the protection area of the reinforcing plate 905 is directly opposite to the light emitting unit 904 , that is, the area of the third surface 9051 may correspond to the area of the pad 903 . It is ensured that the backlight module 91 can have a good folding effect without affecting the protection of the light-emitting unit 904 by the reinforcing plate 905 during the use of the backlight module 91 .
  • This embodiment also provides an electronic device, as shown in FIGS. 52 and 53 , the electronic device 92 further includes a control circuit board 95 and a casing 93 , the control circuit board 95 is accommodated in the casing 93 , and the control circuit board 95 is connected to the backlight module.
  • the group 91 is electrically connected
  • the control circuit board 95 is electrically connected to the flexible circuit board 90
  • the housing 93 is provided with a first edge side 935
  • the support plate 912 is provided with a second edge side 9126 opposite to the first edge side 935
  • the second edge Side 9126 is fixed to first edge side 935 .
  • the electronic device 92 further includes a driving member 94 located on the side of the control circuit board 95 away from the flexible circuit board 90 , and the driving member 94 is used to adjust the voltage received by the electronic device 92 .
  • the electronic device 92 may be a television, a tablet computer or a mobile phone.
  • the backlight module 91 is mainly applied to the electronic device 92 having a foldable screen or a curved screen.
  • the housing 93 is set corresponding to the folding area of the backlight module 91.
  • the backlight module 91 and the housing 93 are synchronously bent to realize the unfolding and folding of the electronic device 92. Because of the reinforcing plate 905 in the backlight module 91, the backlight module 20 can be bent multiple times without damaging the light-emitting unit 904 on the flexible circuit board 90 compared with the prior art, and the backlight module 91 is added. The service life of the electronic equipment has been improved.
  • Embodiment 9 is a diagrammatic representation of Embodiment 9:
  • the light-emitting unit will generate a large amount of heat, so the heat dissipation of the light-emitting component has always been a key consideration in the design process of the light-emitting component.
  • a heat conductor can be arranged on the surface of the LED chip, and a fan can be used to force convection to dissipate the heat on the heat conductor; or a water pump can be used to perform water-cooling heat exchange, but during the heat dissipation process, additional work will be generated. consumption.
  • another example of this embodiment also provides a light-emitting component with good heat dissipation performance and energy saving.
  • the circuit board of the light-emitting component can use the flexible circuit board in the above example, or a rigid circuit board. It is not restricted in the example.
  • the light-emitting assembly in this example further includes a driver chip and a pulsating heat pipe, wherein the circuit board includes a lamp bead area and a driver chip area; the light-emitting unit and the driver chip are respectively arranged in the lamp bead area and the driver chip area, and the evaporation section of the pulsating heat pipe is arranged in the driver chip area.
  • the pulsating heat pipe On the chip area, the pulsating heat pipe is provided with a working medium, and the working medium in the evaporation section is close to the condensation section of the pulsating heat pipe when it moves away from the driving chip;
  • the condensing section dissipates heat, and the heat exchange form of the pulsating heat pipe is passive heat exchange, which does not require additional external drive, and can work only by driving the heat generated by the chip area, which can save power consumption and has good thermal conductivity.
  • the light-emitting assembly provided in this embodiment includes a circuit board 101 and a pulsating heat pipe 104 .
  • the circuit board 101 includes a lamp bead area and a driver chip area.
  • the lamp bead area is provided with a plurality of light-emitting units 102 .
  • LED chips or LED lamp beads of other structures are directly used.
  • These light-emitting units 102 may include, but are not limited to, light-emitting units of various colors.
  • the light-emitting units 102 may be arranged in an array to form an LED array, or other arrangements may be used. I won't repeat them one by one.
  • the driver chip area may include, but is not limited to, the driver chip 103 for driving the light-emitting unit 102 to emit light, and other chips may also be provided in the driver chip area, and the driver chip 103 may include one or more chips.
  • the circuit board 101 is a double-sided circuit board, including a lamp bead area where the light-emitting units 102 arranged in an array are arranged; and a driver chip area, the driver chip is arranged on one side of the circuit board 101 .
  • the middle, and the light emitting unit 102 are respectively arranged on both sides of the circuit board 101 .
  • the circuit board 101 is provided with a plurality of driving chips 103 , and the driving chips 103 are connected to the light-emitting unit 102 through the circuit patterns on the circuit board 101 and driven.
  • the light-emitting assembly of this embodiment further includes a pulsating heat pipe 104 , the evaporation section of the pulsating heat pipe 104 is disposed on the driving chip area, and the working medium in the evaporation section in the pulsating heat pipe 104 moves in a direction away from the driving chip 103 When it is close to the condensation section of the pulsating heat pipe 104 .
  • the pulsating heat pipe evaporation section is arranged in the driver chip area, and is used to export the heat generated by devices such as the driver chip 103 on the driver chip area. It can be understood that the driver chip 103 generates a large amount of heat, and the driver chip 103 is arranged on the light-emitting component.
  • the area of other devices is often also the area with higher temperature in the light-emitting component.
  • the condensing section of the pulsating heat pipe 104 is arranged at a position away from the driving chip 103 , so the condensing section can be in a lower temperature area, and the heat conducted in the pulsating heat pipe 104 can be effectively dissipated.
  • the inside of the pulsating heat pipe 104 is randomly distributed and filled with working fluids composed of liquid plugs 1041 and gas plugs 1042. These working fluids are usually in an equilibrium static state without heat transfer, and are in a static state.
  • the force on the working medium mainly includes the pressure between the gas plugs 1042, the capillary force on the liquid plug 1041 and the gravity on the working medium.
  • the capillary force, gravity and the pressure generated by the thermal expansion of the air bubbles of the gas plug 1042 provide power for the flow of the working medium.
  • the fluid working medium in the pulsating heat pipe flows to the condensing section after absorbing the excess heat in the driving chip area in the evaporation section, and the condensing section releases the heat into the air, so as to have a cooling effect on the driving chip area.
  • the application of the pulsating heat pipe enables the heat from the driver chip area to be quickly dissipated, and the pulsating heat pipe does not need to receive additional external drive, and can only work by driving the heat emitted by the chip area, which can save power consumption and has good thermal conductivity.
  • the light-emitting unit 102 and the driving chip 103 are not mixedly arranged on the same side of the circuit board 101 , that is, the light-emitting unit 102 and the driving chip 103 may be located at different positions on the same side of the circuit board 101 , or different on the circuit board 101 .
  • the pulsating heat pipe 104 can be directly disposed on the driving chip 103, and the size and arrangement position of the pulsating heat pipe 104 can be adjusted so that the light emission of the light emitting unit 102 will not be blocked.
  • a circuit board 101 with better thermal conductivity can be used, the light-emitting unit 102 and the driver chip 103 can also be mixed and arranged on the same side of the circuit board, and the pulsating heat pipe can be arranged on the other side of the circuit board.
  • the heat transferred from the driver chip to the circuit board is dissipated and dissipated.
  • the light-emitting assembly further includes a thermally conductive sheet 105 , and the thermally conductive sheet 105 is disposed between the pulsating heat pipe 104 and the driving chip 103 .
  • the thermal conductive sheet 105 can promote the heat of the driving chip 103 to be conducted to the pulsating heat pipe 104 relatively uniformly, thereby improving the actual heat dissipation efficiency of the pulsating heat pipe 104 .
  • the thermally conductive sheet may be a thermally conductive sheet formed of a copper sheet or other materials with better thermal conductivity.
  • silicone grease is disposed between the thermally conductive sheet 105 and the pulsating heat pipe 104 and/or the driver chip 103 .
  • silicone grease is provided on both sides of the heat-conducting sheet 105 , one side of the heat-conducting sheet 105 is attached to the driving chip area, in contact with the driving chip 103 in the driving chip area, and the pulsating heat pipe 104 is attached to the heat-conducting sheet 105 the other side.
  • silicone grease may be provided only in the area where the thermal conductive sheet 105 contacts the driving chip 103 or the pulsating heat pipe 104 , or a layer of silicone grease may be provided on both sides of the thermal conductive sheet 105 as a whole. The provision of silicone grease can not only assist the connection between the heat conduction sheet 105 and the pulsating heat pipe 104 and/or the driving chip 103 , but also expand the contact area of heat conduction through the silicone grease to ensure the efficiency of heat conduction.
  • the pulsating heat pipe 104 may include heat dissipation fins, the heat dissipation fins are in contact with the body of the pulsating heat pipe 104, and the heat on the body of the pulsating heat pipe 104 may be conducted to the heat dissipation fins to dissipate heat through the heat dissipation fins,
  • the installed heat dissipation fins increase the effective area of the pulsating heat pipe for heat dissipation, so that the heat can be dissipated into the air more efficiently.
  • the radiating fins are specifically arranged in the condensation section and are in contact with the tube body of the condensation section, so that the heat in the condensation section is rapidly dissipated.
  • the radiating fins can also be arranged at more positions of the pulsating heat pipe.
  • the radiating fins can also be arranged from the condensation section to the adiabatic section of the pulsating heat pipe, and the adiabatic section is located between the evaporation section and the condensation section. .
  • the condensing section of the pulsating heat pipe can extend out of the circuit board.
  • FIG. 58 and FIG. 59 wherein FIG. 58 shows the side of the circuit board 101 where the light emitting unit 102 is provided, and FIG. 59 shows that the circuit board 101 is provided with a driver. One side of the chip 103 (the light-emitting unit and the driving chip are not shown).
  • the condensing section of the pulsating heat pipe 104 is arranged outside the circuit board 101.
  • the pulsating heat pipe 104 After the pulsating heat pipe 104 conducts the heat from the driving chip area of the circuit board 101, it is transferred to the outside of the circuit board 101 for heat dissipation, which further ensures the effect of heat dissipation and avoids a large amount of heat being retained. on the circuit board 101 .
  • the condensation section of the pulsating heat pipe 104 extends out of the circuit board, it may still be inside the light-emitting device using the light-emitting assembly.
  • the heat dissipation fins can be arranged to fit into the structure of the condensation section, such as the heat dissipation fins 106 shown in FIG. 60 .
  • a specific structure of the heat dissipation fin 106 is a rectangular sheet-like body as a whole, which is provided with a plurality of through holes 1061. The diameter of each through hole 1061 is consistent with the outer diameter of the pipe body of the pulsating heat pipe 104.
  • the driver chip area is provided with a plurality of driver chips 103 , and each driver chip 103 is at least partially covered by the projection of the evaporation section of the pulsating heat pipe 104 on the circuit board 101 . That is to say, the pulsating heat pipe 104 completely covers all the driver chips 103 in the driver chip area, ensuring that the heat of each driver chip 103 can be effectively dissipated.
  • a thermal conductive sheet 105 is disposed between the pulsating heat pipe 104 and the driving chip 130 , and the size of the thermal conductive sheet 105 can be set to be no smaller than the size of the driving chip area.
  • the thermal conductive sheet 105 also covers all the driving chips 103 and the pulsating heat pipe 104 provided on the other side of the thermally conductive sheet 105 .
  • the pulsating heat pipe 104 in this embodiment may include a plurality of U-shaped pipe bodies, and the U-shaped pipe bodies are connected to each other through U-shaped elbows, the inner circulation of the pulsating heat pipe 104 is conducted, and the U-shaped pipe The two ends in the length direction of the body are the evaporation section and the condensation section respectively. That is, if the fluid working medium in the pulsating heat pipe continues to flow in the same direction, it can return to its original position.
  • U-shaped tubes are arranged in sequence, and the gaps between the U-shaped tubes can be set to be small, that is, the U-shaped tubes are closely arranged, so that more U-shaped tubes can be set within the same area range. Guaranteed heat dissipation. In other embodiments, the pulsating heat pipe can also be replaced with other shapes, which will not be repeated here.
  • the light-emitting assembly of this embodiment includes a circuit board and a pulsating heat pipe.
  • the evaporating section of the pulsating heat pipe is arranged in the driving chip area of the circuit board, and the position of the condensation section is far away from the driving chip area.
  • the condensing section dissipates heat and does not require additional energy to drive, saving power.
  • the pulsating heat pipe is beneficial to be fabricated into a miniaturized structure and uniformly conduct heat, and can exert a good effect even if the arrangement space on the light-emitting component is small.
  • a backlight module can be made into a display backlight field (which may be a TV , display, mobile phone and other terminal backlight modules), key backlight field, shooting field, home lighting field, medical lighting field, decoration field, automobile field, transportation field, etc.
  • key backlight When used in the field of key backlight, it can be used as a key backlight source for mobile phones, calculators, keyboards, etc.

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Abstract

本申请涉及一种LED支架、发光单元及发光组件， LED支架的基板包括基板主体，以及自基板主体延伸至LED支架的碗杯的侧壁内的支撑部，支撑部在碗杯的侧壁内从LED支架的其中一个导电区向另一个导电区延伸，并至少延伸至将这两个导电区绝缘隔离的绝缘区在侧壁上对应的侧壁区域。

Description

LED支架、发光单元及发光组件 技术领域
本申请涉及LED（Light Emitting Diode，LED芯片）领域，尤其涉及一种LED支架、发光单元及发光组件。
 背景技术
贴片LED在照明、装饰、背光、显示等领域有着广泛的应用。贴片LED包括LED支架以及设置在LED支架上的LED芯片。现有贴片LED的LED支架通常包括基板，以及设于基板上的封装体，封装体形成有碗杯以用于容纳LED芯片。但现有LED支架的碗杯的侧壁强度不高，容易受到例如板材形变等外力影响而折断。
因此，如何提升LED支架的强度，是目前亟需解决的技术问题。
 技术问题
鉴于上述现有技术的不足，本申请的目的在于提供一种LED支架、发光单元及发光组件，旨在解决相关技术中，LED支架的强度不高，容易受外力折断的问题。
 技术解决方案
一种LED支架，包括封装体以及部分被所述封装体覆盖的基板，所述封装体形成有碗杯，所述基板的一部分位于所述碗杯内作为所述碗杯的底部；所述基板包括位于所述碗杯内的两个导电区，且所述两个导电区之间设有将二者绝缘隔离的绝缘区；
所述基板包括基板主体，自所述基板主体延伸至所述碗杯的侧壁内的支撑部，所述支撑部在所述侧壁内从其中一个所述导电区向另一个所述导电区延伸，并至少延伸至所述绝缘区在所述侧壁上对应的侧壁区域。
基于同样的发明构思，本申请还提供一种发光单元，包括LED芯片，以及如上所述的LED支架，所述LED芯片设于所述碗杯的底部，所述LED芯片的正、负电极分别与所述两个导电区电连接；
所述发光单元还包括设于所述碗杯内的封装层。
基于同样的发明构思，本申请还提供一种发光组件，所述发光组件包括电路板和如上所述的发光单元，所述发光单元设于所述电路板上，并与所述电路板电连接。
 有益效果
本申请提供了LED支架、发光单元及发光组件，其中LED支架的基板包括基板主体，以及自基板主体延伸至LED支架的碗杯的侧壁内的支撑部，通过该支撑部提升碗杯的侧壁的强度，从而提升LED支架的整体强度；另外，支撑部在碗杯的侧壁内从LED支架的其中一个导电区向另一个导电区延伸，并至少延伸至将这两个导电区绝缘隔离的绝缘区在侧壁上对应的侧壁区域，也即支撑部延伸至在两个导电区投影到碗杯的侧壁上的两个区域之间的区域，而这一部分的区域为LED支架强度最弱的区域，支撑部延伸至这一区域，可进一步提升LED支架的强度，尤其可对LED支架强度最弱的部分形成有力的补强，能最大程度的避免LED支架受外力而被折断的情况发生。本申请提供的发光单元和发光组件采用了强度更好的LED支架，因此可提升发光单元和发光组件的整体强度和可靠性。
 附图说明
图1为本申请实施例一提供的LED支架的俯视图一；
图2为本申请实施例一提供的LED支架的俯视图二；
图3为本申请实施例一提供的LED支架的俯视图三；
图4为本申请实施例一提供的LED支架的俯视图四；
图5为图4中LED支架的A-A剖视图；
图6为本申请实施例一提供的LED支架的俯视图五；
图7为本申请实施例二提供的LED支架结构示意图一；
图8为本申请实施例二提供的LED支架结构示意图二；
图9为本申请实施例二提供的LED支架结构示意图三；
图10为本申请实施例二提供的第一凹槽的结构示意图一；
图11为本申请实施例二提供的第一凹槽的结构示意图二；
图12为本申请实施例二提供的第一凹槽的结构示意图三；
图13为本申请实施例二提供的LED支架结构示意图四；
图14为本申请实施例二提供的LED支架结构示意图五；
图15为本申请实施例二提供的发光组件结构示意图；
图16为本申请实施例三提供的LED支架结构示意图一；
图17为本申请实施例三提供的LED支架结构示意图二；
图18为本申请实施例三提供的LED支架结构示意图三；
图19为本申请实施例三提供的LED支架结构示意图四；
图20为本申请实施例三提供的LED支架结构示意图五；
图21为本申请实施例三提供的发光单元结构示意图；
图22为本申请实施例四提供的LED支架的基板的结构示意图一；
图23为本申请实施例四提供的LED支架的基板的结构示意图二；
图24为本申请实施例四提供的LED支架的基板的结构示意图三；
图25为本申请实施例四提供的发光单元结构示意图；
图26为本申请实施例五提供的LED支架结构示意图一；
图27为本申请实施例五提供的LED支架结构示意图二；
图28为本申请实施例五提供的LED支架结构示意图三；
图29为本申请实施例五提供的LED支架的俯视图一；
图30为本申请实施例五提供的LED支架的俯视图二；
图31为本申请实施例五提供的LED支架的俯视图三；
图32为本申请实施例五提供的LED支架结构示意图四；
图33为本申请实施例五提供的发光单元的结构示意图；
图34为本申请实施例六提供的现有归一化光谱图示意图一；
图35为本申请实施例六提供的现有归一化光谱图示意图二；
图36为本申请实施例六提供的发光单元结构示意图一；
图37为图36中发光单元的俯视图；
图38为本申请实施例六提供的改进后的归一化光谱图示意图一；
图39为本申请实施例六提供的发光单元结构示意图二；
图40为图39中发光单元的俯视图；
图41为本申请实施例六提供的改进后的归一化光谱图示意图二；
图42为本申请实施例七提供的发光单元的结构示意图一；
图43为本申请实施例七提供的发光单元的结构示意图二；
图44为本申请实施例七提供的发光单元的结构示意图三；
图45为本申请实施例七提供的发光单元的结构示意图四；
图46为本申请实施例七提供的发光单元的结构示意图五；
图47为本申请实施例七提供的LED支架上表面上锯齿状结构示意图；
图48为本申请实施例七提供的发光单元的结构示意图六；
图49为本申请实施例八提供的电路板的结构示意图一；
图50为本申请实施例八提供的电路板的俯视图；
图51为本申请实施例八提供的发光组件的结构示意图；
图52为本申请实施例八提供的电子设备弯折状态示意图；
图53为本申请实施例八提供的电子设备结构示意图；
图54为本申请实施例九提供的电路板的结构示意图二；
图55为本申请实施例九提供的发光组件结构示意图一；
图56为本申请实施例九提供的发光组件结构示意图二；
图57为本申请实施例九提供的发光组件结构示意图三；
图58为本申请实施例九提供的发光组件结构示意图四；
图59为本申请实施例九提供的发光组件结构示意图五；
图60为本申请实施例九提供的散热肋片结构示意图。
 本发明的实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施方式。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施方式。相反地，提供这些实施方式的目的是使对本申请的公开内容理解的更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本申请。
需要说明的是，本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的本申请的实施例。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
在本申请中，术语“上”、“下”、“内”、“中”、“外”、“前”、“后”等指示的方位或位置关系为基于附图所示的方位或位置关系。这些术语主要是为了更好地描述本申请及其实施例，并非用于限定所指示的装置、元件或组成部分必须具有特定方位，或以特定方位进行构造和操作。并且，上述部分术语除了可以用于表示方位或位置关系以外，还可能用于表示其他含义，例如术语“上”在某些情况下也可能用于表示某种依附关系或连接关系。对于本领域普通技术人员而言，可以根据具体情况理解这些术语在本申请中的具体含义。此外，术语“设置”、“连接”、“固定”应做广义理解。例如，“连接”可以是固定连接，可拆卸连接，或整体式构造；可以是机械连接，或电连接；可以是直接相连，或者是通过中间媒介间接相连，又或者是两个装置、元件或组成部分之间内部的连通。对于本领域普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本申请。
实施例一：
本实施例提供了一种结构简单、成本低、良品率高、以及整体强度好的LED支架，该LED支架可用于但不限于照明、装饰、背光、显示等领域。该LED支架包括封装体以及部分被封装体覆盖的基板，封装体形成有碗杯，基板的一部分位于碗杯内作为碗杯的底部；基板包括位于碗杯内的两个导电区，且两个导电区之间设有将二者绝缘隔离的绝缘区；基板包括基板主体，自基板主体延伸至碗杯的侧壁内的支撑部，通过该支撑部提升碗杯的侧壁的强度，从而提升LED支架的整体强度；本实施例中，支撑部在侧壁内从其中一个导电区向另一个导电区延伸，并至少延伸至绝缘区在侧壁上对应的侧壁区域；而这一部分侧壁区域通常为LED支架强度最弱的区域，支撑部延伸至这一区域可对LED支架强度最弱的部分形成有力的补强，能最大程度的避免LED支架受外力而被折断的情况发生。
一种示例中，封装体可由但不限于各种树脂等材料在基板上通过包括但不限于注塑、浇筑、模压等方式形成。封装体形成的碗杯用于容纳LED芯片。本示例中碗杯的横截面形状可灵活设置，例如可设置为但不限于矩形、圆形、跑道形、椭圆形、梯形等规则形状，也可根据需求设置为非规则形状，在此不再一一赘述。
一种示例中，基板主体的材质可以为但不限于绝缘材质，例如树脂、陶瓷等，基板可仅包括一个，本示例中的两个导电区可设于同一基板主体上；本示例中基板也可包括两个子基板，此时两个导电区可分别设于两个子基板的基板主体上；本示例中的导电区可通过但不限于在基板主体上设置相应的导电层形成导电区，且导电层之间被绝缘区绝缘隔离。
另一示例中，基板主体的材质可为导电材质，例如导电金属，基板可包括两个子基板，此时两个子基板被绝缘区绝缘隔离，两个子基板位于碗杯内的区域分别构成两个导电区。当然，在又一些应用场景中，基板可包括两个子基板，且其中一个子基板的材质为导电材质，另一个子基板的材质为绝缘材质。
本示例中，绝缘区可包括但不限于设于两个导电区之间将二者绝缘隔离的空隙，也可包括设于两个导电区之间的绝缘材质，例如包括但不限于各种绝缘胶或绝缘树脂等。且本示例中的绝缘区靠近碗杯开口的一面，可高于至少一个导电区靠近碗杯开口的一面，或低于至少一个导电区靠近碗杯开口的一面，或与至少一个导电区靠近碗杯开口的一面齐平设置，具体可根据各种需求灵活设置，以提升其通用性。
本示例中，支撑部与基板主体之间可设置为一体成型结构，从而可简化LED支架的结构，提升其集成度和强度。当然，二者也可设置为非一体成型结构。且支撑部设置的个数以及具体位置可根据应用需求灵活设置，为了便于理解，本实施例下面以基板包括两个被绝缘区绝缘隔离的子基板，两个子基板位于碗杯内的区域分别构成两个导电区为示例进行说明。
在本示例中，支撑部可包括自其中一个子基板的基板主体延伸至碗杯的侧壁内的支撑部，或，自其中一个子基板的基板主体相对的两侧分别延伸至碗杯相对的两个侧壁内的两个支撑部，或自两个子基板的基板主体相对的两侧分别延伸至碗杯相对的两个侧壁内的两个支撑部等。本示例中分别称两个子基板为第一子基板和第二子基板，两个导电区则分别为第一导电区和第二导电区。
一种应用示例参见图1所示的LED支架的俯视图，应当说明的是，为了更好体现本发明中的LED支架的结构，附图中对封装体进行了透视处理，且呈现俯视视角的附图中阴影部分为侧壁的顶部；其中，第一子基板11的面积较大，第二子基板12面积较小并与第一子基板11之间相隔一绝缘区13，第一子基板11和第二子基板12均被封装体10部分覆盖。在封装体所形成的碗杯中，第一子基板11和第二子基板12的一部分被暴露出以分别作为第一导电区D1和第二导电区D2。LED芯片可设置于第一导电区D1，也可横跨第一导电区D1和第二导电区D2。在本实施例中，第一子基板11包括自其基板主体延伸出的支撑部14，该支撑部14自第一子基板11的基板主体延伸至碗杯的侧壁内，并在侧壁从，第一导电区D1对应于该侧壁的第二区域T2，向第二导电区D2对应于该侧壁的第三区域T3延伸，并至少延伸至绝缘区13在侧壁上对应的侧壁区域，也即图1中的第一区域T1；从而对LED支架强度最弱的部分形成有力的补强，最大程度的避免LED支架受外力而被折断的情况发生。本示例中，支撑部14可穿过第一区域T1并延伸至第二区域T2内，例如参见图4所示，支撑部14也可不延伸至第二区域T2内，例如参见图1至图3中所示的支撑部14。且应当理解的是，本示例中的支撑部14可整体都被封装体10覆盖，也即整体都延伸至侧壁内，也可仅有一部分被封装体10覆盖（例如参见图2所示）。
在本示例中，支撑部14靠近碗杯开口的一面可与基板主体靠近碗杯开口的一面齐平，也即二者可处于同一平面上；或支撑部14靠近碗杯开口的一面与基板主体靠近碗杯开口的一面不处于同一平面上。例如，可设置支撑部14靠近碗杯开口的一面高于基板主体靠近碗杯开口的一面，也即设置支撑部14从基板主体的高度方向（即靠近碗杯开口的方向）上突出，换言之，支撑部14在侧壁内向碗杯的杯口延伸，从而进一步提升该侧壁的整体强度；尤其可使得LED支架在受到例如板材形变带来的从下往上的外力时，可进一步降低侧壁折断的可能性。应该说明的是，本示例中所指的绝缘区13在侧壁上所对应的第一区域T1，指绝缘区13与侧壁所接触的这部分区域在侧壁上所对应的区域。换言之，从俯视的角度看，绝缘区13的延长方向与支撑部14具有相交的部分，且该部分的支撑部14与基板主体并不处于同一平面上，形成立体的增强结构保证侧壁的强度。一些应用场景中，绝缘区13的板材更易变形，支撑部14进入第一区域T1，更好的加强了LED支架的侧壁中强度较为薄弱的部分。但在一些具体应用场景中，支撑部14同时也可包括向远离第二导电区D2的方向延伸的部分，以对其他部分的侧壁也进行加强。
本示例中，支撑部14可以直接从基板主体的侧边向上延伸，也可以从基板主体的侧边水平延伸一段距离后再向上延伸。向上延伸时支撑部14可包括竖直的向上突起，也包括斜向上突起。例如参见图2所示的示例，基板主体的侧边的靠近顶部的位置直接延伸出截面为矩形的支撑部14，该支撑部14的厚度可被设置为小于基板主体的厚度，该支撑部14沿着第一子基板11的基板主体向第二子基板12的方向延伸设置，并进入第一区域T1。本示例中支撑部14的形状可以根据需要设置，例如包括但不限于半C型（参见图3所示）、倒L型等形状或其他形状或形状的组合，例如图1中所示的半跑道形和矩形的组合。
图1至图3所示的示例中，都是从其中一个子基板的基板主体的一侧延伸出支撑部。应当理解的是，本实施例中，LED支架也可包括从其中一个子基板的基板主体相对的两侧分别延伸至碗杯相对的两个侧壁内的两个支撑部，或从基板主体相对的两侧以及从基板主体被封装体覆盖的其他区域分别延伸至碗杯侧壁内的三个支撑部，从而进一步提升支架的整体强度。例如一种示例参见图4和图5所示的LED支架，其相对于图1-图3的示例，则是在第一子基板11的基板主体相对的两侧具有分别延伸至碗杯相对的两个侧壁内的两个支撑部14。从而对LED支架中绝缘区3长度方向上对应于侧壁上的第一区域T1的强度都有提升，也即相对于图1-图3所示的LED支架，其整体强度可成倍提升。
本实施例中，LED支架也可包括分别自两个子基板的基板主体的一侧分别延伸至碗杯的侧壁内的两个支撑部。例如参见图6所示的LED支架，其相对于图1-图3的示例，则是在第一子基板11的一侧具有延伸至碗杯其中一个侧壁内的支撑部14，在第二子基板12的基板主体的一侧也具有延伸至碗杯另一个侧壁内的支撑部14，这两个支撑部14位于碗杯相对的两个侧面内。相对于图1-图3所示的LED支架，其也可成倍提升整体强度。根据以上示例可知，本实施例中支撑部14的个数和位置的设置可灵活、多变的设置，且结构简单，从而满足各种应用场景的需求。
在本实施例的一些示例中，参见图4所示，可设置支撑部14包括与基板主体连接的第一支撑体141以及自第一支撑体141伸出的第二支撑体142，第二支撑体142自第一支撑体141伸出后，向第二子基板延伸一定的距离，进入绝缘区对应的第一区域T1。一些应用示例中，第一支撑体141和第二支撑体142可以是一体成型的。第一支撑体141可以仅在水平方向上沿垂直或不垂直于基板主体的侧边的方向延伸，第二支撑体142自第一支撑体141伸出后在高度方向上突出并向第二子基板延伸；也可以第一支撑体141突起有一定的高度，第二支撑体142自第一支撑体141伸出后水平地向第二子基板延伸；或第一支撑体141和第二支撑体142均在高度方向上突出，只要进入第一区域T1的第二支撑体142的至少一部分高于基板主体即可。通过第一支撑体141和第二支撑体142两段的支撑体结构，在加强侧壁强度的同时，保证支架和封装体之间的结合力，在一应用示例中，可以设置第一支撑体141的突起的坡度较第二支撑体142更平缓，通过更为平缓的第一支撑体141增加支架和封装体之间的结合力，从而使得支架和封装体之间结合更稳固，不易因外力发生分离。
可以理解的是，支撑部14所延伸至的侧壁内的部分，均能够在一定程度上增强侧壁的强度。一些实施方式中，参见图5所示，图5为图4所示的LED支架沿其线A-A的截面示意图。支撑部14的第一支撑体141还包括弧形的连接区域，也即支撑部14靠近基板主体的部分可为弧形部143；本示例中弧形部143是指支撑部14在高度方向上突出时，存在弧形的转角部，该弧形部143使得支撑部14和基板主体之间平滑的过渡，并可进一步增大与封装体的接触面，有利于提高气密性，并且有利于引导进入的水汽向支撑部的方向蔓延，从而降低LED支架内部受潮的风险。
在一些示例中，参见图5所示，在垂直于设置支撑部14的侧边的截面中，支撑部14水平方向上向远离基板主体的方向延伸，支撑部14端延伸方向与基板主体之间的夹角θ大于等于90°，小于180°，也即支撑部14在壁内的顶端的延伸方向，与基板主体之间的夹角大于等于90°，小于180°，从而降低LED支架的成型难度。但可以理解的是，为了增加侧壁的强度，无论支撑部14与基板主体之间的夹角如何，支撑部14都应当是被包裹在封装体的侧壁中的。若LED支架包括两个或两个以上的支撑部14，则这两个支撑部14的顶端延伸方向与基板主体之间的夹角可以设置为相同，使得LED支架两侧的强度更一致。
本实施例中，支撑部14可以选择硬度高于封装体的硬度的材料，一种示例中，该封装体可以是例如塑胶等材料，则支撑部的硬度高于所使用的塑胶。支撑部14可以是金属材料，陶瓷材料或高强度的树脂材料或其他材料等，在一些实施方式中，第一子基板11为导电基板，其基板主体和支撑部14使用导电金属材料，例如第一子基板可以是包括但不限于铜基板、铝基板、铁基板、银基板等，支撑部为与基板主体同样的材料，例如金属材料，且第一子基板一体成型保证结构的整体性。在形成支撑部14的过程中，支撑部14可以是第一子基板上的一个延伸出的区域，通过冲压、蚀刻等工艺形成所需的形状等。在支撑部14成型后，再使用塑胶等材料进行封装形成侧壁等封装体结构。
本实施例上述各示例所提供的LED支架中，第一子基板11和第二子基板12中的至少之一形成有延伸至碗杯侧壁内的至少一个支撑部14，支撑部14自基板主体伸出至从基板主体的高度方向上突出，且支撑部14向靠近第二子基板12的方向延伸进入绝缘区3对应的第一区域T1。本实施例的LED支架通过上述支撑部14使得侧壁的强度增加，尤其是绝缘区3对应的第一区域T1的强度显著提升，减少了例如板材形变等外力导致侧壁折断的情况，保证了LED支架以及利用其制造的LED发光器件的品质。可以预见的是，采用本实施例提供的LED支架所制得的发光单元，以及采用该发光单元制得的发光组件的整体强度和可靠性也会更高。
实施例二：
现有的LED器件封装中，LED芯片被设置在LED支架的基板的导电区内，且通过封装胶对LED芯片进行封装保护得到LED器件这一发光单元。LED器件可能在高温、高湿、盐雾环境下进行工作，封装胶与基板之间容易松动甚至脱落等情况，导致LED器件的保护失效。
本实施例为了解决以上问题，提供了一种基板与封装胶之间的接触面积更大，结合强度更强，可尽量避免封装胶与基板之间容易松动甚至脱落等情况的发生。
应当理解的是，本实施例中的LED支架可以采用上述实施例所示的LED支架，也可采用其他结构的LED支架，本实施例对其不做限制。本实施例中，LED支架包括基板，参见图7所示，基板包括基板主体21，以及设于基板主体21的第一表面上的第一导电层22和第二导电层23，第一导电层22和第二导电层23之间被绝缘区隔离以形成两个导电区。本实施例中的LED支架可包括设于基板主体21上的封装体，该封装体可采用但不限于各种封装胶。
在本实施例中，第一导电层22和第二导电层23中的至少之一的边缘设有多个第一凹槽25，使得基板主体上与封装胶接触的导电层具有更大的侧面积，且而导电层边缘（即侧壁）设有多个第一凹槽25，使得基板主体能够与封装胶有更大的结合面积，也即封装胶在本实施例的基板主体上能够有更好的粘附性，从而提升结合强度，减少封装胶与基板主体松动或脱离的情况发生。
参见图7所示，本示例中第一导电层22和第二导电层23中的边缘都设有多个第一凹槽25，且应当理解的是，可以在第一导电层22和第二导电层23的其中一个边缘（也即一个侧面）设置第一凹槽25，也可在其多个边缘分别设置第一凹槽25，从而进一步提升其与封装胶的结合面积和结合强度。
本示例中，基板主体21上设有至少两个导电通孔24，且第一导电层22和第二导电层23分别与不同的导电通孔24电连接；参见图9所示，本示例中基板还包括覆盖在基板主体的第二表面上的第三导电层26和第四导电层27，第三导电层26与第一导电层22通过对应的导电通孔24电连接，第四导电层27与第二导电层23通过其他对应的导电通孔24电连接；本示例中基板主体的第一表面和第二表面为相对的两个面，例如可为但不限于基板主体的正面和背面。
其中，第一导电层22和/或第二导电层23的边缘的多个第一凹槽25的在导电层的高度方向上的厚度可以与导电层的高度一致，也可以小于导电层的高度。例如图7所示例出的情况即是第一凹槽25在导电层的高度方向上的厚度与导电层的高度一致。作为另一示例参见图8，第一凹槽25在导电层的高度方向上的厚度小于导电层的高度的情况。
可以理解的是，由于第一导电层22和/或第二导电层23的边缘额外形成有多个第一凹槽，相较于传统的矩形或其他形状的导电层，具有更大的侧面积，且第一导电层22和/或第二导电层23的侧壁的粗糙度通常较高，因此，在设有第一导电层22和第二导电层23的一侧进行封装胶的设置时，与封装胶更强的结合。且在一些实施过程中，最终形成的LED发光器件的气密性也能够因此提升。本实施例的各个导电层包括但不限于焊盘、引脚，例如一些实施方式中，上述第一导电层22和第二导电层23可以为用于设置LED芯片的焊盘，而第三导电层26和第四导电层27可作为引脚。应当说明的是，在一些传统的基板中，例如作为正极或负极焊盘的导电层上可能会形成有一个第一凹槽或类似形状，但实际上，这样的设置仅仅是用于便于对焊盘的正负极进行区分，并非用于特意增强封装胶的粘附性，且在一些基板中，通过印刷标记对正负极进行区分。本实施例的基板，在于第一导电层22和/或第二导电层23有多个第一凹槽25，这些第一凹槽25的位置可以沿导电层的边缘按照一定周期连续且规律性的排列，也可以根据实际的基板形状和／或后续安装的LED芯片等电子器件的布局进行设置。
如图9，本实施例中的导电通孔24从基板主体21的第一表面贯穿至第二表面，导电通孔24设置的位置和数量可根据实际情况选择，第一导电层22和第二导电层23所对应的导电通孔24相离一定距离，避免第一导电层22和第二导电层23靠得过近。可选的，可通过在导电通孔24中设置导电金属层实现基板主体两面的连接，导电金属层用于与基板主体的第一表面以及第二表面上对应的导电层接触，以使对应的导电层之间形成电连接。导电金属层的材料可以是任意导电金属，包括但不限于金、银、铜、铂等。导电金属层可以通过成膜工艺设于导电通孔中，例如真空溅射，也可以通过其他成膜工艺制作。本示例中，导电金属层可以不充满导电通孔24，示例性的，导电通孔24设置为孔径50-200um，导电金属层在导电通孔的内壁形成，其厚度可设置为不超过15 um。在另一些示例中，导电通孔24中也可以被导电的金属材料填满，或填入导电金属棒，同样可以实现将基板两面的对应的导电层电连接的效果。
在一些示例中，第一导电层22、第二导电层23、第三导电层26以及第四导电层27包括铜层，其形成方式可采用但不限于与导电通孔24中的导电金属层形成方式类似的方式，在此不再赘述。本示例中铜层的厚度可根据实际的器件大小或规格等需要进行设定，作为一种示例，铜层厚约20-100um，第一导电层22、第二导电层23、第三导电层26以及第四导电层27可以等厚，也可以各不相同；也可以设置为第一导电层22与第二导电层23等厚，第三导电层26与第四导电层27等厚，但第一导电层22和第三导电层26之间可以不等厚。
在一些示例中，第一导电层22、第二导电层23、第三导电层26以及第四导电层27中的至少一个还包括金属镀层，应当说明的是，此处的金属镀层可以包括任何化学性质比铜更稳定的导电金属，例如镀金、镀银、镀铂，或者一些合金。通过金属镀层，使得导电层可以具有一些相应的金属的表面性质，相较于采用裸铜作为导电层时也更为稳定。
本实施例中基板上的上述第一凹槽25可以通过包括但不限于蚀刻、切割等方式制作。示例性的，基板主体21上可通过例如真空溅射等方式形成整面铜层，然后通过蚀刻、切割等方式将铜层制作为所需的形状，在此过程中，第一凹槽25也被制作出来。上述金属镀层的形成，可以在第一凹槽25制作完成后进行，这样第一导电层22和/或第二导电层23的侧壁上都能够被镀上所需的金属。在制作本实施例的基板的过程中，向导电层上镀金属之前，可以将导电层的表面进行研磨抛光，使其变得平整。
本实施例中的基板主体可包括陶瓷板材，也即本实施例的基板可以是一种陶瓷基板，例如ALN、AL2O3等陶瓷基板。在其他实施方式中，基板主体也可以是其他绝缘材料。
应当理解的是，本实施例中基板主体上第一导电层22和第二导电层23的第一凹槽25可以是多种形状，在一些实施方式中，第一凹槽25的形状可包括弧状、矩状、锯齿状中的至少一种。例如图7所示的第一导电层22和第二导电层23的边缘周期性（即各个第一凹槽25之间的间隔固定）的排列有矩状的第一凹槽25；图10所示导电层的边缘周期性的排列有弧形状的第一凹槽25；图11所示导电层的边缘周期性的排列有锯齿状的第一凹槽25；图12所示的为另一种形式的锯齿状的第一凹槽25。可以理解的是，第一凹槽的形状还可以为其他形状，且其大小和排列方式均可以设定，只要保证形成有多个第一凹槽，即能够使得会与封装胶接触的第一导电层和第二导电层的侧面积增大，达到增加封装胶的粘接性的效果。
应当理解的是，一些实施方式中，一个第一导电层22、一个第二导电层23、一个第三导电层26以及一个第四导电层27所对应的区域能够设置一个或多个LED芯片。且基板上也可以设置包括不止一个这样的区域。
本实施例的基板通过在第一导电层和/或第二导电层的边缘上形成有多个第一凹槽，使得第一导电层和/或第二导电层较为粗糙的侧表面的表面积增大，在进行封装胶的封装之后，封装胶能够与第一导电层和/或第二导电层的侧壁更大面积的接触，从而使得基板能够与封装胶更强的结合，达到减少最终制成的LED发光器件上封装胶脱落的情况，提升最终制成的LED发光器件的品质的效果。
本实施例还提供一种发光单元，也可称之为LED发光器件，请参见图13，其包括基板主体21、LED芯片28以及封装层29。LED芯片28设于基板主体21的第一表面，LED芯片28的正极与第一导电层22焊接，LED芯片28的负极与第二导电层23焊接；封装层29设于基板主体21的第一表面，包覆第一导电层22、第二导电层23以及LED芯片28，且封装层29进入第一导电层22和/或第二导电层23的边缘的第一凹槽25中。
上述发光单元中，封装层29可为但不限于封装胶层，封装层29进入到第一导电层22和/或第二导电层23的边缘的第一凹槽25中，增大了与基板上较为粗糙的第一导电层22和/或第二导电层23的侧壁的接触面积，其与基板之间的结合强度得到有效的提高。
在本实施例的一示例中，发光单元根据需求还可包括齐纳二极管，齐纳二极管设于基板主体21的第一表面，即设于LED芯片28的同一面，齐纳二极管的正极与第二导电层焊23接，负极与第一导电层22焊接，且齐纳二极管也被封装层所包覆。反接的齐纳二极管能够对LED芯片形成保护。而将其设置到LED芯片的同一面，使得齐纳二极管也能够被封装胶层所包覆从而得到保护。可以理解的是，LED发光器件上还可以包括其他元器件，在电路结构允许的情况下，同样可以设置到LED芯片的同一面。
在本实施例的一示例中，第一导电层22和第二导电层23的边缘上的多个第一凹槽25位于LED芯片28所覆盖的区域以外的位置；发光单元还包括齐纳二极管，则多个第一凹槽25还位于齐纳二极管所覆盖的区域以外的位置。元器件安装到基板上后，其一部分区域能够与第一导电层22或第二导电层23接触，通过面积较大的第一导电层22或第二导电层23可实现热量的导出，第一凹槽25避免设置在元器件的位置，保证第一导电层22或第二导电层23对于元器件热量的导出。
如图14，为图13所示的发光单元所采用的基板，第一导电层22和第二导电层23上的第一凹槽25分别沿第一导电层22以及第二导电层23的边缘设置，在第一导电层22和第二导电层23的长度方向上并远离基板中心的一侧设置有较多的第一凹槽25，实际上，这部分第一凹槽25可以周期性的布置；第一导电层22和第二导电层23的其中几个角上也形成有第一凹槽25；且在第一导电层或第二导电层的长度方向上并靠近基板中心的一侧也设有少许第一凹槽25。可见在本示例中，第一导电层22和第二导电层23上的第一凹槽均没有设置在LED芯片28和齐纳二极管所覆盖的位置，而第一导电层22二导电层23被上述元器件所覆盖的位置，均被尽可能的设置了较多的第一凹槽25，能够使得基板与封装胶层（图中未示出）具有较好粘接性。可见，在实际应用中，基板上的第一凹槽25可根据最终的元器件布局而进行选择，在避开元器件所覆盖的区域以及保证第一导电层22和第二导电层23具有一定表面积的同时，尽可能的沿第一导电层22和第二导电层23的边缘形成第一凹槽25，增强基板与封装胶层的结合强度，且在一些实施过程中，气密性也能够因此提升，有利于保证LED发光器件的最终品质。
在本实施例中，还对基板以及本实施例的LED发光芯片的一种制作过程进行说明，包括：
S101：选择合适的基板主体打孔；例如在基板主体21的左下和右上区域分别打一个孔，示例性的，孔径可以为50-200um。该步骤中，所打的孔，即是后续会形成导电通孔的孔；
S102：在基板主体的正反面以及孔中，溅射金属层；例如在基板主体21上溅射一层较薄的金属层，厚度可选择小于15um。该金属层可为导电金属，例如铜等；
S103：在基板主体表面移印电路，并在金属层上电镀厚铜层；
S104：将厚铜层制作成所需的导电层形状；经过蚀刻或切割后，即可得到如图14中所示例的基板外形；
S105：对导电层进行研磨抛光，使其表面平整；
S106：对导电层表面进行电镀处理，得到成品的基板；例如通过电镀的方式，在铜层表面形成金属镀层；
S107：在基板上设置元器件，并通过封装胶进行封装。
示例性的，元器件通过包括但不限于共晶焊接等方式设置到基板上，元器件包括齐纳二极管和LED芯片等，在基板上固定好这些元器件后，可通过模压等方式进行封装胶层的制作。在一些具体示例中，封装胶层厚度可为200-400um，封装胶层可以是绝缘的胶材，例如硅胶等。可以理解的是，一些示例中，封装胶层需高于基板上元器件的最高表面，保证将各个元器件都包覆以形成保护。封装胶层模压完成后，放入烤箱中进行烘烤固化，示例性的，硅胶封装可在温度120-170℃的情况下进行烘烤固化。应当理解的是，当基板上包括不止一个设置LED芯片的区域时，可以对固化好的LED发光器件进行切割，得到单颗的LED发光器件。
本实施例还提供一种发光组件，如图15所示，包括电路板210和发光单元，该发光单元可为本实施例上述各示例所示的LED发光器件，电路板210包括线路层211，第三导电层26和第四导电层27与线路层211焊接。可以理解的是，该发光组件的电路板210上还可以布设有相应的电路图案，以及用于驱动LED发光器件进行发光的元器件。本实施例的发光装置中的LED发光器件的封装胶层与基板结合力更强，不容易从基板上脱落，发光装置的质量高。
实施例三：
现有的LED封装结构中，封装体与基板的结合性较差，会造成气密性能差，容易出现光衰等问题。针对该问题，本实施例提供了一种新型的LED支架，在LED支架的基板与封装体接触的区域，也即基板被封装体覆盖的区域增加第二凹槽，封装体在第二凹槽处形成了一个台阶状结构，覆盖于基板上的封装体的一部分填充于第二凹槽内，进而通过第二凹槽增大封装体与基板的接触面积，增强了基板与封装体支架的结合力和气密性能；此外，当该支架应用于LED封装体制得发光单元的情况下，由于第二凹槽的设置，可以允许封装体的内壁相比于现有方案增大倾斜程度，依然可以保证所需的结合强度，从而可以提高发光单元的出光角度。应当理解的是，本实施例中的LED支架可以采用上述实施例（例如实施例一）所示的LED支架，也可采用其他结构的LED支架，本实施例对其不做限制。
为了便于理解，下面结合附图所示的几种示例进行说明。
如图16所示的LED支架，该支架包括基板3和设置在基板3上的封装体32，基板3连接封装体32的一侧开设有第二凹槽31，封装体32覆盖于基板3的部分表面并填充于第二凹槽31。本实施例的一些示例中，基板3可作为导电导热层使用，材料可为但不限于铜合金、铝、金、银、铜等。封装体32通过围绕基板的四周填充物料所形成的保护结构，其材料可为但不限于热固性树脂或热塑性树脂等。
在本实施例的一种示例中，LED支架上开设的第二凹槽31深度可为但不限于0.05mm～0.3mm，宽度可为但不限于0.05～0.5mm，具体需要考虑作为封装体32的填充物材料的粒径，一般宽度和深度需要在最大粒径的2倍及以上，避免填充不实。
在本实施例的一些示例中，基板3具有被绝缘区34隔离的两个导电区，本示例中的该绝缘区34为一条带状的孔槽结构，该绝缘区34内可以填充绝缘材质的填料，从而实现两个导电区之间的电性隔离。
在本实施例的一种示例中，如图16所示，封装体32的内壁呈漏斗状且开口尺寸在远离基板3的方向上逐渐增大，也即封装体32围合形成的碗杯的开口尺寸自碗杯的底部向远离基板3的方向逐渐增大。封装体32的内壁连接在第二凹槽31的槽口靠近碗杯中心的一侧(也即第二凹槽31的槽口远离基板3边缘的一侧)，且封装体32的内壁在基板3的剖切面内的投影形状为直线L1，即封装体32的内壁形状为圆台或棱台结构的侧面，其中本示例中的基板3的剖切面垂直于基板3的表面。在该结构中，由于基板3和封装体32结合的地方设有第二凹槽31，封装体32的内部可以做的更倾斜，依然可以保证所需的结合强度，当其应用于LED封装体结构时，出射光线离LED中心轴的角度更大，从而可以提高LED封装体的出光角度θ1。
在一些实施方式中，如图17所示，封装体32的内壁呈漏斗状且开口尺寸在远离基板3的方向上逐渐增大，封装体32的内壁连接在第二凹槽31的槽口靠近碗杯中心的一侧，且封装体32的内壁在基板3的剖切面内的形状为曲线L2，曲线的具体形状包括但不限于圆弧、椭圆弧及抛物线。同样地，在该结构中，由于基板3和封装体32内壁结合的地方设有第二凹槽31，封装体32的内部可以做的更倾斜，依然可以保证所需的结合强度，当其应用于LED封装体结构时，出射光线离LED中心轴的角度更大，从而可以提高LED封装体的出光角度。
在一些实施方式中，如图18所示，封装体32的内壁呈漏斗状且开口尺寸在远离基板3的方向上逐渐增大，封装体32覆盖第二凹槽31两侧的基板3表面。封装体32的内壁在基板3的剖切面内的形状包括与基板3表面垂直连接的第一段35和相对于基板3表面倾斜设置的第二段36。封装体32覆盖第二凹槽31两侧的基板3表面可以使得封装体32在第二凹槽31的两侧均形成台阶结构，进一步增加基板3与封装体32之间的结合强度并进一步提供气密性。封装体32内壁的第一段35用于保证封装体32的厚度，第二段36用于形成开放式的渐扩开口，增大出光角度。
在一些实施方式中，如图16-图18所示，基板3上设置第二凹槽31的一侧还开设有用于固定芯片（可包括但不限于LED芯片）的第三凹槽33，第三凹槽33可开设在基板3上的任意一个导电区内。一种示例中，第三凹槽33在基板3表面以沉孔形式存在，其深度可为但不限于0.05 mm～0.3mm，宽度可大于待固定的芯片的边长，以使得能够将芯片放置于第三凹槽33内部。第三凹槽33可以起到加深封装体32杯深的作用，本领域技术人员知晓在LED封装体中，芯片上面的封装层可有一定的厚度，以保证封装后产品的气密性，芯片才不易受到外界环境影响到其可靠性。本实施例中第三凹槽33的作用是即使LED封装体的高度不够，也可以通过第三凹槽33的深度保证封装体的厚度，可以在保证满足封装层高度的前提下，将LED封装体的尺寸尽可能做小。该结构还可以使得芯片与基板3之间的键合线310不容易裸露在胶面上，降低造成光衰和死灯的可能性。
需要说明的是，本实施例提供的用于LED封装体的支架的其他构成以及操作对于本领域的普通技术人员来说是可知的，均可以参照现有技术中相关装置的结构，在此不再详细描述。
本实施例还提供了一种发光单元，其包括本实施例提供的LED支架，参见图19-图21所示，本实施例中的发光单元包括LED芯片38，LED芯片38通过固晶胶37固定在封装体32内侧的基板3表面（即碗杯内），LED芯片38可通过但不限于键合线310与基板3电连接，封装层39设置于封装体32形成的碗杯内用于密封LED芯片38。当基板3开设有第三凹槽33的情况下，第三凹槽33为LED封装体的固晶区，第三凹槽33位于碗杯形状的封装体32内部，LED芯片38通过固晶胶37固定在第三凹槽33内部，通过键合线310实现LED芯片38与基板3的电连接。
为了便于理解，本实施例下面对LED支架的一种制作过程为示例进行说明，其包括但不限于：
制备基板3：在基板3的中部位置开设第三凹槽33，在第三凹槽33的四周开设第二凹槽31，其中第二凹槽31的深度0.05mm～0.3mm，宽度为0.05～0.5mm，第三凹槽33的深度为0.05～0.3mm，宽度需要大于LED芯片38的边长。
形成支架：在第二凹槽31和模具作用下，通过填充物所形成的封装体32延伸到第二凹槽31内，基板3和封装体32形成支架结构。
利用固晶设备和夹制具在第三凹槽33内的固晶区放置固晶胶37，然后利用固晶设备和夹制具在固晶胶37上放置LED芯片38，并进行固化处理，使得LED芯片38固定在第三凹槽33内。
利用焊线设备和夹制具对固晶烘烤后的材料进行焊线，使得LED芯片38通过键合线310与基板3电连接。采用的键合线310包括但不限于金线、银线或者合金线。
利用胶设备对焊线后的材料进行点荧光胶或封装胶，然后对点完荧光胶或封装胶的材料进行烘烤固化，形成封装层39。最终获得的发光单元产品气密性好，产品可靠性高，出光角度大，亮度高，可以应用室内室外高可靠性要求的产品上。应当理解的是，本示例中的LED芯片为正装LED芯片，也可根据需求替换为倒装LED芯片或垂直LED芯片。
本实施例所公开的发光单元由于包括上述实施例提供的支架，因此具有该支架的发光单元也具有上述所有的技术效果，在此不再一一赘述。发光单元的其他构成以及操作对于本领域的普通技术人员来说是可知的，在此不再详细描述。本说明书中部分实施例采用递进或并列的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可，在此不再赘述。
实施例四：
传统的LED支架中，通常在基板主体的表面依次设置铜镀层和银镀层，以提高LED支架的整体性能。然而，在将LED芯片通过锡焊的方式连接在基板表面时，铜镀层中的大量铜离子会迁移至银镀层中，并与银镀层表面的锡结合形成锡铜化合物，从而形成孔洞，导致生产良率较低。
针对上述问题，本实施例提供了一种新型的LED支架，其包括基板，基板包括基板主体（也即基板主体），基板主体的第一表面上设有两个被绝缘区绝缘隔离的导电区，其中至少一个导电区包括在基板主体的第一表面上依次层叠设置的第一铜镀层、镍镀层、第二铜镀层和银镀层，且设置第一铜镀层的厚度大于第二铜镀层的厚度，镍镀层用于阻挡第一铜镀层中的铜离子迁移至第二铜镀层中。通过在基板主体表面依次层叠设置第一铜镀层、镍镀层、第二铜镀层和银镀层，有效提高了LED支架的整体性能，其中，第二铜镀层的厚度较薄，第二铜镀层中仅存在少量的铜离子迁移至银镀层中，从而有效避免铜离子与银镀层表面的锡焊料形成大量的锡铜化合物而导致孔洞的产生，且由于镍镀层的存在，能够阻挡第一铜镀层中的铜离子迁移至第二铜镀层中，有效避免第二铜镀层中迁移铜离子的含量增多，从而锡铜化合物无法大量形成，生产良率得到了提高。应当理解的是，本实施例中的LED支架的其他结构可采用上述各实施例所示的LED支架的结构，也可采用其他适用于本实施例LED支架的结构，本实施例对其不做限制。为了便于理解，本实施例下面结合附图所示的示例进行说明。
请参见图22所示LED支架的基板，包括基板主体40和在基板主体40表面依次层叠设置的第一铜镀层41、镍镀层42、第二铜镀层43和银镀层44，其中：基板主体40具备一定的结构强度，以起到承载作用。并且基板主体40应由导热率较高的材料制成，从而当LED芯片工作发热时，其产生的热量能够通过LED支架进行传导，以实现有效散热。在一种具体的实施例中，制成基板主体40的材料可为导电材料，例如金属材料。应当理解的是，基板主体40的材料包括但不限于导电材料，还可以为其他任意具备一定结构强度的高导热率材料制成，在此不对基板主体40的材料进行具体的限定。
本实施例的一示例中，基板主体40包括相背的第一表面401和第二表面402，第一表面401和第二表面402上均层叠设置有第一铜镀层41、镍镀层42、第二铜镀层43和银镀层44。其中，第一表面401上的金属镀层用于与LED芯片连接，第二表面402上的金属镀层用于与电路板连接。应当理解的是，可采用但不限于电镀的方式在基板主体40表面形成上述金属镀层，而在电镀过程中，若仅在基板主体40的一个表面上形成金属镀层，其难度较高，且操作更为复杂，因此，可在第一表面401和第二表面402上一并形成上述金属镀层，以降低工艺难度，提高加工效率。需要说明的是，在基板主体40表面加工形成第一铜镀层41、镍镀层42、第二铜镀层43和银镀层44的方式包括但不限于电镀，还可以采用金属蒸镀、化学镀或其他任意满足相应功能要求的方式进行加工，在此不对上述金属镀层的加工形成方式进行具体的限定。
第一铜镀层41设于基板主体40的表面。应当理解的是，在常规的制造工艺中，基板主体40表面通常会存在平整度较差的问题，若将基板主体40直接安装在电路板上，基板主体40与电路板之间会存在间隙或孔洞，从而导致生产良率较低。同样的，若将LED芯片直接安装在凹凸不平的基板主体40表面，会对LED芯片的工作效果造成一定的影响。通过在基板主体40的第一表面401和第二表面402上设置第一铜镀层41，以改善LED支架的表面平整度，有效避免LED支架与电路板之间存在间隙或孔洞，并且，LED芯片安装在较为平整的第一铜镀层41上，其工作效果同样能够得到有效提高。
本实施例的一示例中，第一铜镀层41的厚度范围为0.5μm-5μm。应当理解的是，当第一铜镀层41的厚度小于0.5μm时，第一铜镀层41的厚度过薄，难以对基板主体40表面的凹陷进行补偿，从而无法达到平坦化的作用，对应的LED支架与电路板之间仍会存在间隙或孔洞，且LED芯片安装在相对应的LED支架上，其工作效果仍会受到一定的影响；当第一铜镀层41的厚度大于5μm时，第一铜镀层41的厚度较厚，在一定程度上增加了制造成本。基于此，当第一铜镀层41的厚度大于等于0.5μm且小于等于5μm时，能够在保证LED支架的表面平整度的同时，有效降低制造成本。
镍镀层42设于第一铜镀层41和第二铜镀层43之间。应当理解的是，在常规工艺中，LED支架与电路板之间以及LED芯片与LED支架之间通常采用锡焊的方式进行固定连接，银镀层44表面存在锡焊料层，在工作一段时间后，第一铜镀层41中的铜离子容易迁移至第二铜镀层43中，使得第二铜镀层43中的铜离子增多，大量的铜离子会由第二铜镀层43迁移至上述银镀层44中，并与该银镀层44表面的锡相结合形成锡铜化合物，大量锡铜化合物的产生容易导致LED支架与电路板之间以及LED支架与LED芯片之间形成孔洞，从而降低生产良率。 镍镀层42的存在能够有效阻挡第一铜镀层41中的铜离子迁移至第二铜镀层43中，进而有效避免大量的铜离子迁移至银镀层44中而与银镀层表面的锡焊料形成较多的锡铜化合物。
还应当理解的是，与LED芯片相连接的银镀层44还可以对LED芯片发出的光线进行反射，以起到提高亮度的作用。镍镀层42的存在，能够有效避免大量铜离子迁移到上述银镀层44中而降低银镀层44的反射率，进而保证了该银镀层44的相应反射功能正常。
本实施例的一示例中，镍镀层42的厚度范围为0.125μm-2.5μm。应当理解的是，当镍镀层42的厚度小于0.125μm时，镍镀层42的厚度过薄，镍镀层42难以有效阻挡铜离子的迁移，从而无法避免大量锡铜化合物的产生，且无法保证银镀层44的反射率满足相应要求；当镍镀层42的厚度大于2.5μm时，镍镀层42的厚度较厚，在一定程度上增加了制造成本。基于此，当镍镀层42的厚度大于等于0.125μm且小于等于2.5μm时，能够在阻挡铜离子迁移的同时，有效降低制造成本。
第二铜镀层43设于镍镀层42与银镀层44之间，且第二铜镀层43的厚度小于第一铜镀层41的厚度。应当理解的是，当银镀层44直接设于镍镀层42的表面时，银镀层44与镍镀层42之间的结合度较差，银镀层44容易从镍镀层42的表面脱离，从而导致LED支架的稳定性较差，通过在镍镀层42和银镀层44之间设置第二铜镀层43，第二铜镀层43与银镀层44之间的结合度较佳，能够有效提高LED支架的结构稳定性。还应当理解的是，第二铜镀层43的厚度应小于第一铜镀层41的厚度，即第二铜镀层43的厚度应较薄，从而第二铜镀层43内的铜离子含量较少，有效避免大量铜离子由第二铜镀层43迁移至银镀层44中，在一定程度上减少了由锡铜化合物导致形成的孔洞数量，有效提高了生产良率，同时还保证了银镀层44的反射率满足相应要求。
本实施例的一示例中，第二铜镀层43的厚度范围为0.0625μm-1μm。应当理解的是，当第二铜镀层43的厚度小于0.0625μm时，第二铜镀层43的厚度过薄，第二铜镀层43无法起到结合作用，银镀层44仍存在易脱离的问题，从而无法有效保证LED支架的结构稳定性；当第二铜镀层43的厚度大于1μm时，第二铜镀层43的厚度过厚，第二铜镀层43中的铜离子含量较多，从而铜离子容易从第二铜镀层43中大量迁移至与电路板连接的银镀层44中，进而与该银镀层44表面的锡形成大量锡铜化合物，从而形成孔洞，导致生产良率降低。同时，大量的铜离子还容易迁移至与LED芯片连接的银镀层44中，从而导致该银镀层44的反射率降低，无法满足相应功能要求。基于此，当第二铜镀层43的厚度大于等于0.0625μm且小于等于1μm时，能够在与银镀层44进行有效结合的同时，避免大量铜离子迁移至银镀层44中。
银镀层44设置在第二铜镀层43背离镍镀层42的一侧。应当理解的是，在靠近基板主体40的第一表面401的一侧，LED芯片设置在银镀层44的表面，由于银镀层44的反射率较高，LED芯片发射的光线能够被银镀层44反射，从而有效提高其光亮效果；在靠近基板主体40的第二表面402的一侧，电路板连接在银镀层44的表面，通常情况下，电路板与LED支架之间常通过锡焊的方式进行固定连接，而银镀层44与锡焊料层之间的结合度优于镍镀层42与锡焊料层之间的结合度，银镀层44的存在能够使得电路板与LED支架之间进行有效固定而不易脱落，提高了结构稳定性。需要说明的是，LED支架与电路板之间的连接方式包括但不限于以锡焊的方式进行连接，还可以采用其他任意满足相应功能要求的连接方式进行连接，在此不对LED支架与电路板之间的连接方式进行具体的限定。
本实施例的一示例中，银镀层44的厚度范围为0.25μm-5μm。应当理解的是，当银镀层44的厚度小于0.25μm时，银镀层44的厚度过薄，靠近基板主体40的第一表面401的银镀层44难以起到反射光线的作用，靠近基板主体40的第二表面402的银镀层44难以起到与锡焊料层相结合的作用；当银镀层44的厚度大于5μm时，银镀层44的厚度过厚，由于银的价格昂贵，极大程度的增加了制造成本。基于此，当银镀层44的厚度大于等于0.25μm且小于等于5μm时，能够同时满足对光线的反射以及与焊料层之间的结合，并有效降低制造成本。
本实施例提供的LED支架，通过在基板主体40表面依次层叠设置第一铜镀层41、镍镀层42、第二铜镀层43和银镀层44，有效提高了LED支架的整体性能，其中，第二铜镀层43的厚度较薄，第二铜镀层43中仅存在少量的铜离子迁移至银镀层44中，从而有效避免铜离子与银镀层44表面的锡焊料形成大量的锡铜化合物而导致孔洞的产生，且由于镍镀层42的存在，能够阻挡第一铜镀层41中的铜离子迁移至第二铜镀层43中，有效避免第二铜镀层43中迁移铜离子的含量增多，从而锡铜化合物无法大量形成，生产良率得到了提高。
请一并参见图23和图24，图23是另本实施例的一示例中LED支架的结构示意图；图24是本实施例的另一示例中LED支架的结构示意图。本实施例的一示例中，LED支架还包括钯镀层45，钯镀层45设于银镀层44远离第二铜镀层43的一侧，钯镀层45用于保护银镀层44。应当理解的是，钯镀层45的结构较为稳定，钯镀层45覆盖在银镀层44的表面，能够提升银镀层44的抗氧化能力、抗硫化能力以及耐腐蚀能力，在一定程度上提高了LED支架的性能。本示例中钯镀层45的厚度范围为0.0025μm-0.25μm。应当理解的是，当钯镀层45的厚度小于0.0025μm时，钯镀层45的厚度过薄，钯镀层45无法对银镀层44起到足够的保护作用，从而银镀层44容易被氧化、被硫化甚至被腐蚀；当钯镀层45的厚度大于0.25μm时，钯镀层45的厚度过厚，由于钯的价格昂贵，极大程度的增加了制造成本。基于此，当钯镀层45的厚度大于等于0.0025μm且小于等于0.25μm时，能够对银镀层44进行有效保护，并降低制造成本。
本实施例的一示例中，在基板主体40表面形成金属镀层后，可将其浸泡在抗氧化剂中后清洗风干，以进一步提高LED支架的抗氧化能力。
如图24，本实施例的另一示例中，为了进一步的降低制造成本，可仅在与LED芯片相连接的银镀层44表面设置钯镀层45。需要说明的是，与电路板相连接的银镀层44通常被锡焊料层覆盖，锡焊料层能够对该银镀层44起到一定的保护作用。而与LED芯片连接的银镀层44大部分被暴露在空气中，因此，可仅在与LED芯片相连接的银镀层44表面设置钯镀层45，以对该银镀层44进行保护。
请参见图25所示的发光单元（也即LED模组）的结构示意图。该发光单元包括LED芯片404、封装层405和本实施例提供的LED支架，封装层405和LED芯片404均设于基板403的表面，且LED芯片404位于碗杯底部。应当理解的是，LED支架与封装层405之间还可设有锡焊料层，即LED支架与封装层405之间通过锡焊的方式进行固定，当然也可通过导电胶进行固定。本实施例提供的发光单元，通过安装本申请任一实施例提供的LED支架，能够在保证发光单元的整体性能较佳的同时，有效提高发光单元的生产良率。本实施例还提供一种LED封装器件，该LED封装器件包括封装体和上述发光单元，封装体收容发光单元，以实现封装保护。本实施例提供的LED封装器件，通过安装本实施例提供的发光单元，能够在保证LED封装器件的整体性能较佳的同时，有效提高显示装置的生产良率。
本实施例还提供一种发光组件，包括本实施例提供的发光单元或LED封装器件。本实施例提供的发光组件，通过安装本实施例提供的发光单元或LED封装器件，能够在保证发光组件的整体性能较佳的同时，有效提高显示装置的生产良率。
实施例五：
随着器件技术应用的发展，仪表板、开关、符号、电话及传真等工业设备指示灯、背光灯、小型设备、智能穿戴设备背光指示以及尺寸受限的数码管背光指示对LED封装超薄、小尺寸的要求越来越高。数码管、智能穿戴设备等产品都有轻薄化发展的趋势。
传统的 LED芯片封装通常采用绝缘胶把正装芯片固定在基板上，之后再用键合线材把芯片正负极与基板正负极相连，最后将荧光胶饼模压注入到基板上。这种结构导致产品厚度难以减薄，无法满足超薄型LED产品的应用要求。
针对上述问题，本实施例在基板主体位于碗杯内的区域开设有自第一表面向第二表面下凹且未贯穿第二表面的第四凹槽，其中第二表面远离碗杯；基板包括设于第四凹槽内被绝缘区绝缘隔离的第一焊盘和第二焊盘，第一焊盘和第二焊盘均自第四凹槽的底壁延伸至基板主体的第二表面，第一焊盘和第二焊盘位于第四凹槽内的部分分别构成两个导电区。通过在基板上开设凹槽，并将芯片至少部分容置于凹槽内进行封装的结构，减少了芯片伸出第一表面的高度，从而整体上减薄LED产品的厚度，满足超薄型LED产品的应用要求。为了便于理解，本实施例下面结合附图所示的示例进行说明。
请参考图26至图28，本实施例提供了一种LED支架，该LED支架可采用上述各实施例所示的LED支架，也可采用其他结构的LED支架，本实施例对其不做限制。本实施例提供的LED支架包括基板、第一焊盘51、第二焊盘52和LED芯片53。基板1包括基板主体5，基板主体5包括相背的第一表面501和第二表面502，基板主体5在第一表面501开设有第四凹槽54，第四凹槽54不贯穿第二表面502。第一焊盘51和第二焊盘52被绝缘区隔离间隔地设在基板主体5上，且第一焊盘51和第二焊盘52均自第四凹槽54的底壁延伸至第二表面502。LED芯片53至少部分容置在第四凹槽54内，LED芯片53的第一电极和第一焊盘51连接，LED芯片53的第二电极和第二焊盘52连接。
在本实施例中，基板主体5可为但不限于PCB板，PCB板上设有第四凹槽54，第四凹槽54自第一表面501向第二表面502凹进且不贯穿第二表面502，第四凹槽54用于容纳LED芯片53，且第四凹槽54底壁印制有与LED芯片53相匹配的线路。LED芯片53的数量可以根据实际需求设置为1个以上，其安装位置根据实际需求而定，本实施例不作过多限定。当基板主体5的厚度小于LED芯片53或需要LED芯片53的发光面高于基板主体5的第一表面501时，第四凹槽54的深度小于LED芯片53的厚度，LED芯片53部分容置于第四凹槽54内；如图27和图28所示，当基板主体5的厚度大于LED芯片53的厚度且需要LED芯片53不凸出于第一表面501时，第四凹槽54的深度大于或等于LED芯片53的厚度，LED芯片53完全容纳于第四凹槽54内部，这种结构可以更好地保护LED芯片53，防止其裸露在第四凹槽54外侧受到碰撞等伤害。可选地，LED芯片53采用倒装LED芯片，以使LED模组的结构更加紧密。其他实施例中，也可以选用正装LED芯片、垂直LED芯片等结构。
第一焊盘51和第二焊盘52为具有导电功能的金属材质或外表面设有导电金属层，且第一焊盘51与第二焊盘52之间设有间隔距离。可选地，第一焊盘51包括第一端511和第二端512，且第一焊盘51由第一端511向第二端512延伸。其中，第一端511容置于第四凹槽54内，第二端512与基板主体5的第二表面502连接。类似的，第二焊盘52包括第三端521和第四端522，且第二焊盘52由第三端521向第四端522延伸，第三端521容置于第四凹槽54内，第四端522与第二表面502连接。LED芯片53的正极与第一焊盘51的第一端511连接，LED芯片53的负极与第二焊盘52的第三端521连接。可以理解的是，第一焊盘51与第二焊盘52的位置可以互换，即任选其中一个焊盘为第一焊盘51时，则另一个焊盘即为第二焊盘52。
通过在基板主体5上开设第四凹槽54，并将LED芯片53至少部分容置于第四凹槽54内进行封装的结构，减少了LED芯片53伸出第一表面501的高度，从而整体上减薄LED产品的厚度，满足超薄型LED产品的应用要求。
一种实施例中，请参考图29至图31，第四凹槽54的形状与LED芯片53的形状对应。可选地，如图29所示，当LED芯片53的数量为1个且为矩形时，则可开设方形第四凹槽54；如图30所示，当LED芯片53的数量为1个且为圆形时，则可开设圆形第四凹槽54；如图31所示，当LED芯片53的数量为多个且呈不规则排列时，第四凹槽54的形状可相应为不规则形状。可以理解的是，第四凹槽54的底壁面积始终大于LED芯片53在第一表面501的正投影的面积，以使第四凹槽54能够容纳LED芯片53。通过使第四凹槽54的形状与LED芯片53对应设置，可以灵活调整第四凹槽54的形状和大小，既有利于对第四凹槽54进行加工，又有利于根据基板主体5的面积和LED芯片53的形状及布局实时调整第四凹槽54的形状和大小，以适应多种需求。
一种实施例中，请参考图26、图29和图31，第四凹槽54的个数为一个以上，每个第四凹槽54内的LED芯片53的个数为一个以上。可选地，如图29所示，基板主体5上开设有一个第四凹槽54，且第四凹槽54内LED芯片53的的数量为一个；如图31所示，基板主体5上开设有一个第四凹槽54，且第四凹槽54内部设有多个LED芯片53。通过灵活调整第四凹槽54的个数，可以根据需要将多个LED芯片53设置于一个凹槽1内，避免多次加工第四凹槽54；也可以通过增加第四凹槽54的个数减少对基板主体5的切割面积，提高结构强度。
一种实施例中，请参考图26，基板主体5包括相背的第一侧面55和第二侧面56，第一焊盘51的第一端511自第四凹槽54的底壁经第一表面501、第一侧面55延伸至第二表面502形成第二端512，第二焊盘52的第三端521自第四凹槽54的底壁经第一表面501、第二侧面56延伸至第二表面502形成第四端522，第一焊盘51的第一端511和第二焊盘52的第三端521在第四凹槽54内相对于第四凹槽54的底壁中垂线B对称设置，且第一端511与第三端521间隔设置。可选地，可在第一端511和第三端521之间设置绝缘物质，且绝缘物质分别与第一端511和第三端521接触，以使得绝缘物质将第一焊盘51和第二焊盘52电气隔离的同时，通过绝缘物质分别与第一焊盘51和第二焊盘52接触，更便于均匀导热。
一种实施例中，请参考图26和图27，LED芯片封装结构还包括加强件57。例如，如图27所示，在第四凹槽54的底壁上，第一焊盘51和第二焊盘52之间具有第一间隙L1，第一间隙L1用于将第一焊盘51和第二焊盘52隔开形成正负极焊盘，第一间隙L1的大小根据LED芯片53的正负极间隔距离设置，当LED芯片53的正负极间隔距离较大时，第一间隙L1较大，当LED芯片53的正负极间隔距离较小时，第一间隙L1较小。加强件57设置在第二表面502，加强件57在第二表面502的正投影完全覆盖第一间隙L1在第二表面502的正投影。通过设置加强件57弥补基板主体5在第一焊盘51和第二焊盘52之间厚度过薄易弯曲的缺点，使得LED封装结构在第一间隙L1处的厚度增加，从而提升了结构强度。
一种实施例中，请参考图26和图27，在第二表面502上，第一焊盘51和第二焊盘52之间具有第二间隙L2。可选地，第一焊盘51的第二端512与第二焊盘52的第四端522之间设有第二间隙L2，以将第一焊盘51与第二焊盘52隔开，通过将第一焊盘51与第二焊盘52电气隔离，以使第一焊盘51和第二焊盘52分别形成正负极焊盘。可选地，第二间隙L2之间设置有绝缘物质，以达到通过绝缘物质实现将第一焊盘51和第二焊盘52进行电气隔离的同时，还能利用绝缘物质将第一焊盘51和第二焊盘52连接为一个整体，便于均匀导热。
一种实施例中，请参考图26至图28，加强件57与第一焊盘51或第二焊盘52为一体式结构。可选地，如图27所示为加强件57与第一焊盘51为一体式结构，加强件57由第一焊盘51的第二端512从第一侧面55所在一侧向第二侧面56所在一侧延伸，且加强件57在第二表面502的正投影完全覆盖第一间隙L1在第二表面502的正投影；如图28所示为加强件57与第二焊盘52为一体式结构，加强件57由第二焊盘52的第四端522从第二侧面56所在一侧向第一侧面55所在一侧延伸，且加强件57在第二表面502的正投影的面积，大于第一间隙L1在第一表面501的正投影的面积。通过使加强件57与第一焊盘51或第二焊盘52为一体式结构设计，既提升了结构LED封装结构的强度，同时使第一焊盘51或第二焊盘52与基板主体5的接触面积更大，便于散热，且易于安装固定。
一种实施例中，请参考图32，加强件57设置于第二间隙L2，且加强件57的宽度小于第二间隙L2以与第一焊盘51和第二焊盘52均形成间隔距离。加强件57与第二表面502贴合，且其在第二表面502的正投影的面积，大于第一间隙L1在第一表面501的正投影的面积。加强件57可以为金属或具有一定结构强度的非金属材料制成，金属材料如铜，非金属材料如陶瓷等。可选地，加强件57与第二表面502可拆卸连接。通过将加强件57设置于第二间隙L2，可以避免基板主体5在第一间隙L1处由于厚度较小易弯曲断裂的问题，且加强件57与第一焊盘51和第二焊盘52相互独立，可以根据需要灵活安装。
一种实施例中，请参考图26，加强件57背向基板主体5的表面设有阻焊层58。加强件58与第一焊盘51或第二焊盘52为一体式结构，由于加强件57背向基板主体5的表面为具有导电性能的金属材质，阻焊层58由具有抗酸性、耐溶性和绝缘性能的材料构成，如油墨层。因此，在加强件57背向基板主体5的表面涂覆阻焊层58以形成一保护层，有利于防止因外界水分等因素对加强件57的腐蚀，且其高绝缘性能够防止贴片时元器件与理论位置发生倾斜而引起的短路问题。
本实施例提供一种发光组件，发光组件包括上述任一实施例所述的LED支架制得的发光单元。该发光组件可以为通用照明装置，如LED发光二极管、大功率陶瓷 LED 光源等，可用于道路照明、建筑照明、景观照明、室内照明等高端市场。也可以为LED 背光液晶电视、智能穿戴设备等显示装置的背光光源。通过采用本实施例提供的LED芯片封装结构，使得光源厚度较小，从而有利于减薄显示装置的厚度，满足超薄型显示装置的应用要求。
本实施例还提供一种LED芯片封装方法，该方法包括制作上述实施例所述的LED芯片的封装结构以及采用该LED芯片的封装结构进行封装，其包括但不限于：
在基板主体5上开设一第四凹槽54。可选地，基板主体5包括相背的第一表面501和第二表面502。可选地，采用激光切割的方式在基板主体5的第一表面501开设第四凹槽54，第四凹槽54由第一表面501向第二表面502凹进但不贯穿第二表面502，第四凹槽54把基板主体5分为正极和负极两个区域。可选地，还可采用控深锣机加工、双面芯板压合等方式在基板主体5上加工第四凹槽54。
在基板主体5上间隔地设置第一焊盘51和第二焊盘52。可选地，第一焊盘51和第二焊盘52为具有导电功能的金属材质或外表面涂覆有具有导电功能的金属镀层。第一焊盘51包括第一端511和第二端512，第一端511容置于第四凹槽54内且与第四凹槽54的底壁连接，第二端512与基板主体5的第二表面502连接，第一焊盘51由第一端511延伸至第二端512。类似的，第二焊盘52包括第三端521和第四端522，第三端521容置于第四凹槽54内，第四端522与第二表面502连接，且第二焊盘52由第三端521向第四端522延伸。第一端511与第三端521、第二端512和第四端522之间均设有间隔距离。
将LED芯片53与第一焊盘51和第二焊盘52连接。可选地，可通过3D钢网将焊料59印刷在基板主体5的第四凹槽54内，常用焊料59包括银胶、锡膏和助焊剂等，3D钢网的开孔图形根据LED芯片53的电极进行设计；然后将LED芯片53放置于焊料59上。当选用的焊料59为银胶时，则进行烘烤操作，条件一般为：恒温170℃，时间1H。当选用的焊料59为锡膏或助焊剂时，则进行回流焊操作，条件一般为：最高炉温290℃，时间30s，且需要在氮气的环境下进行，避免焊料59中的金属粒子被氧化，这一步骤用于通过焊料59将LED芯片53的第一电极和第一焊盘51连接，LED芯片53的第二电极和第二焊盘52连接。
通过采用激光切割的方式在基板主体5上开设第四凹槽54，具有更高的加工精度和加工效率，提升了成品良率。通过将第一焊盘51、第二焊盘52的一端容置于第四凹槽54的底壁，LED芯片53的第一电极和第二电极分别与第一焊盘51和第二焊盘52于第四凹槽54内连接，减小了LED芯片凸出于基板主体5的高度，从而减薄了LED产品的厚度。
进一步地，请参考图32和图33，在基板主体5上间隔地设置第一焊盘51和第二焊盘52，具体包括：
将第一焊盘51和第二焊盘52相对于第四凹槽54的底壁中垂线B对称设置。可选地，将第一焊盘51的第一端511和第二焊盘52的第三端521分别设置于第四凹槽54内中垂线B的两侧，且第一端511和第三端521与中垂线B的距离相等，以达到结构对称，避免LED封装结构因厚度不均引起弯曲损坏。
在第二表面502设一加强件57。可选地，采用两个独立的金属块或金属板作为第一焊盘51和第二焊盘52，将第一焊盘51和第二焊盘52的一端容置于第四凹槽54的底壁上，且第一焊盘51和第二焊盘52之间具有第一间隙L1，第一焊盘51和第二焊盘52的另一端均延伸至第二表面502。加强件57同样为金属结构，且设置在第二表面502上，其在第二表面502的正投影完全覆盖第一间隙L1在第二表面502的正投影。通过设置加强件57弥补基板主体5在第一焊盘51和第二焊盘52之间因厚度过薄易弯曲损伤的缺点，使得LED封装结构在第一间隙L1处的厚度增加，从而提升了结构强度。
进一步地，请参考图26至图28，在第二表面502设一加强件57,包括：将加强件57与第一焊盘51或第二焊盘52设置为一体式结构。可选地，基板主体5包括相对的第一侧面55和第二侧面56，加强件57与第一焊盘51为一体式结构时，加强件57由第一焊盘51的第二端512向第二焊盘52的第四端522延伸，直至第二端512到第一侧面55的距离大于第三端521到第一侧面55的距离。当加强件57与第二焊盘52为一体式结构时，加强件57由第二焊盘52的第四端522向第一焊盘51的第二端512延伸，直至第四端522到第二侧面56的距离大于第一端511到第二侧面56的距离。
可选地，在别的实施例中，加强件57为单独的金属块或其他具有一定结构强度的材料制成的结构，加强件57与第一焊盘51或第二焊盘52胶粘或焊接。
可选地，加强件57与第一焊盘51或第二焊盘52均间隔设置，且加强件57在第二表面502的正投影完全覆盖第一间隙L1在第二表面502的正投影。
通过在第二表面502设置加强件57，可以避免基板主体5因在第一间隙L1处厚度过薄易受损的问题。
在一些示例中，请参考图26和图33，在第二表面502设一加强件57后，还可包括：在加强件57背向基板主体5的表面设一阻焊层58。可选地，当加强件57与LED封装结构的负极焊盘为一体式结构时，在加强件57背向基板主体5的表面涂覆液态光致阻焊剂，液态光致阻焊剂可以为绿色、红色、白色等任意颜色的阻焊油墨，阻焊油墨在使用前为粘稠状态，经印刷、预烘、对位、曝光、显影、固化后形成阻焊层58，将加强件57背向基板主体5的表面完全覆盖住。由于阻焊层58具有耐腐蚀、耐高温、高绝缘性的优点，因此对LED封装结构具有良好的保护作用，且其高绝缘性避免了元器件易发生短路的问题。
在一些示例中，请参考图33，在加强件57背向基板主体5的表面设一阻焊层58后，还可包括:封装切割。可选地，首先将已配置好的环氧树脂荧光胶饼510放置于模压机器内，调整相应的参数，对已预热并清洁的半成品进行封装处理。待塑封完成进行烘烤操作后，切割机使用对应厚度的刀片对整块基板主体5进行相应的切割处理，最后变成所需要的产品。
实施例六：
生鲜照明灯是专为生鲜食品照明设计的新一代特种照明，能够突显生鲜食品颜色特征，从而刺激人们购买欲望。目前市场上用于生鲜照明灯的光谱都以普通白光或单色光混合为主，没有考虑到精细化的颜色管理，以及对应不同被照射物品的颜色还原能力进行有差别的特殊化科学调整。市场上常见的生鲜照明灯通常采用白色灯珠+红色灯珠方案，其混光效果较差。也有采用蓝光芯片+绿色荧光粉+红色荧光粉方案，其激发出的生鲜白光的归一化光谱如图34或图35所示，两种归一化光谱图中的红光波段的波峰对应的波长均低于600nm，红光的穿透性不足，生鲜照明颜色失真，对生鲜肉类的色泽的还原程度低。再者，两种归一化光谱图的红光波段波峰的相对光功率(即相对光强)均低于0.75，生鲜红色的显示效果较差。而且，红光波段与绿光波段相连，容易产生黄光，黄光会影响生鲜肉类对红色饱和度的需求，进而呈现出容易误导消费者的茶色，这是现有生鲜照明灯普遍存在的问题。
针对上述问题，本实施例提供了两种可应用于但不限于生鲜照明灯的发光单元，其具有对生鲜食品的色泽还原较佳，一定程度上能够降低黄光的生成，避免黄光影响生鲜肉类对红色饱和度的需求，从而进一步提高生鲜照明颜色还原程度，避免呈现影响购买欲望的茶色出现，能够呈现出与生鲜肉类较为匹配的红色等优点。本实施例提供的发光单元可应用于各种生鲜照明装置，例如可应用于但不限于生鲜猪肉、生鲜牛肉等生鲜肉类的照明。生鲜照明装置可选为生鲜照明灯，或者具有生鲜照明功能的冰箱、冰柜等电子设备。为了便于理解，本实施例下面对两种发光单元进行示例说明。
一种示例的发光单元参见图36和图37所示，包括LED支架60（可选用上述各实施例所示的LED支架，也可选用其他结构的支架，本实施例对其不做限制。）、红光LED芯片61、蓝光LED芯片62和封装层，其中封装层包括绿色介质63。LED支架60具有基板，红光LED芯片61和蓝光LED芯片62均设于基板上，绿色介质63覆盖红光LED芯片61和蓝光LED芯片62。红光LED芯片61和蓝光LED芯片62激发绿色介质63，以发射出白光。且发射出的白光的归一化光谱图满足以下条件：归一化光谱图包括第一红光波段和绿光波段，第一红光波段的半波宽为15nm～30nm，第一红光波段的波峰为第一波峰，第一波峰对应的相对光功率为0.9～1，第一波峰对应的波长为645nm～665nm。
可选地，红光LED芯片61可选为垂直结构或水平结构，同样的，蓝光LED芯片62也可选为垂直结构或水平结构。红光LED芯片61和蓝光LED芯片62通过固晶胶固定于LED支架60的底部，并在150℃的条件下烘烤1～2H，使得固晶胶完全固化。其中，如果是水平结构的芯片，则采用硅树脂透明固晶胶；如果是垂直结构的芯片，则采用硅树脂掺银固晶胶。红光LED芯片61和蓝光LED芯片62与LED支架60之间还需要设置焊线，焊线一般为0.9mil 80％Au，可选采用M或S线弧工艺。焊线的布置以及连接方式视LED支架60结构、红光LED芯片61以及蓝光LED芯片62的结构搭配而定，完成电路的导通即可。优选采用垂直结构的红光LED芯片61，水平结构的蓝光LED芯片62，支架、蓝光LED芯片62和红光LED芯片61依次通过焊线连接。
请参见图38，白光的归一化光谱图满足条件：
归一化光谱图包括第一红光波段，第一红光波段的半波宽为15nm～30nm。具体的，第一红光波段的半波宽可选为15nm、18nm、24nm、27nm、30nm等，其中优选为30nm，且半波范围为640nm～670nm。
第一红光波段的波峰为第一波峰，第一波峰对应的相对光功率为0.9～1，第一波峰对应的波长为645nm～665nm。具体的，第一波峰对应的相对光功率(即相对光强)为0.9、0.92、0.95、0.99、1等，其中优选为1。第一波峰对应的波长可选为645nm、651nm、654nm、659nm、665nm等，其中优选为660nm。
通过设置红光LED芯片61、蓝光LED芯片62激发绿色介质63的方案，所激发出的第一红光波段的半波宽在15nm～30nm之间，使得能量较为集中，红光饱和度较高，且第一红光波段的第一波峰的波长在650nm和670nm之间，红光穿透力较强，对生鲜肉类的色泽还原较佳，同时，第一红光波段的第一波峰对应的相对光功率在0.9和1之间，生鲜红色显示效果较佳。另外，上述参数的第一红光波段，一定程度上能够降低黄光的生成，避免黄光影响生鲜肉类对红色饱和度的需求，从而进一步提高生鲜照明颜色还原程度，避免呈现影响购买欲望的茶色出现，能够呈现出与生鲜肉类较为匹配的红色。
一种实施方式中，请参见图38，归一化光谱图还包括绿光波段。绿光波段的半波宽为35nm～60nm。具体的，绿光波段的半波宽可选为35nm、41nm、48nm、53nm、57nm、60nm等，其中优选为60nm，且半波范围为510nm～570nm。通过设置绿光波段的半波宽在35nm和60nm之间，绿光波段既不会影响白色生鲜的显色效果，也不会影响红色生鲜的显色效果，可以理解的是，若绿光波段的半波宽在35nm以下时，工艺成本较高且颜色容易失调，白色容易失真，不利于生鲜肉类的白色部位的颜色还原；若绿光波段的半波宽在60nm以上时，绿光波段占据的白光的比例过大，容易影响到红光，红色容易失真，不利于生鲜肉类的红色部位的显色。
绿光波段的波峰为第二波峰，第二波峰对应的相对光功率为0.2～0.4，第二波峰对应的波长为530nm～550nm。具体的，第二波峰对应的相对光功率可选为0.2、0.24、0.29、0.34、0.38、0.4等。第二波峰对应的波长可选为530nm、532nm、538nm、544nm、550nm等，其中优选为540nm。通过设置第二波峰的相对光功率在0.2和0.4之间，在不影响白色显色的同时，还能进行较好的红色显色，有利于避免生鲜照明失真。第二波峰对应的波长在530nm和550nm之间，与第一红光波段的第一波峰的距离较大，不容易影响红光显色。
一种实施方式中，请参见图38，归一化光谱图还包括黄光波段，黄光波段对应的波长范围为585nm～630nm，黄光波谷的相对光功率低于0.15。具体的，黄光波段的左侧与绿光波段相连，右侧与红光波段相连。黄光波段呈凹状，即黄光波段左侧和右侧对应的相对光功率要高于中部对应的相对光功率。通过设置黄光波谷的相对光功率低于0.15，进一步降低了黄光的生成，避免黄光影响生鲜肉类对红色饱和度的需求，所导致茶色的出现，有利于呈现出与生鲜肉类较为匹配的红色。
一种实施方式中，请参见图38，归一化光谱图还包括蓝光波段，蓝光波段的半波宽为15nm～30nm。具体的，蓝光波段的半波宽可选为15nm、17nm、19nm、22nm、26nm、29nm、30nm等，其中优选为15nm，且半波范围为435nm～465nm。通过满足蓝光波段的半波宽在15nm～30nm之间，蓝光波段既能生产符合生鲜要求的白色，又能够不影响生鲜红色的显色。可以理解的是，当蓝光波段的半波宽在15nm以下时，制程较难，对晶片衬底要求很高。当蓝光波段的半波宽在30nm以上时，晶片整体亮度会下降很多，且容易导致白光失调而呈现出惨白色，不利于呈现白色部位的生鲜效果。
蓝光波段的波峰为第三波峰，第三波峰对应的相对光功率为0.3～0.5，第三波峰对应的波长为445nm～455nm。具体的，第三波峰的相对光功率可选为0.3、0.34、0.39、0.44、0.5等。第三波峰对应的波长可选为445nm、447nm、449nm、451nm、452nm、454nm、455nm等，其中优选为450nm。通过设置第三波峰的相对光功率在0.3和0.5之间，在不影响白色显色的同时，还能进行较好的红色显色，有利于避免生鲜照明失真。第二波峰对应的波长在445nm和455nm之间，能够较好地生产符合白色部位生鲜要求的白色。
可以理解的是，红光波段的第一波峰对应的相对光功率在0.9～1之间，绿光波段对应的相对光功率在0.2和0.4之间，蓝光波段的第三波峰对应的相对光功率在0.3和5之间，以便于精确定义光谱的辐射分布。
一种实施方式中，请参见图38，归一化光谱图还包括青光波段，青光波段对应的波长范围为465nm～515nm，青光波谷的相对光功率低于0.1。具体的，青光波段的左侧与蓝光波段相连，右侧与绿光波段相连。青光波段呈凹状，即青光波段左侧和右侧对应的相对光功率要高于中部对应的相对光功率。通过设置青光波谷的相对光功率低于0.1，降低了青光的生成，避免青光影响生鲜红色的呈现，以及避免青光影响生鲜白色的呈现，有利于提高生鲜肉类的显鲜效果。
一种实施方式中，请参见图38，归一化光谱图还包括紫光波段，紫光波段对应的波长范围为350nm～420nm，紫光波段的相对光功率低于0.1。具体的，紫光波段与蓝光波段的左侧相连。紫光波段随着对应波长的减小而减小(减小至一定程度后基本不变)。通过满足紫光波段的相对光功率低于0.1，有助于降低惨白色呈现的几率，进而能够提高白色部位的生鲜效果。
一种实施方式中，请参见图38，归一化光谱图还包括与第一红光波段相邻的第二红光波段，第二红光波段对应的波长范围为680nm～780nm，第二红光波段的相对光功率低于0.1。具体的，第二红光波段的左侧与第一红光波段相连。通过满足第二红光波段的相对光功率低于0.1，有利于提高红光的饱和度，从而提高红色部位的生鲜效果。
一种实施方式中，请参见图36和图37，绿色介质63的材质包括β-Sialon，蓝光LED芯片62的材质包括氮化镓(GaN)，红光LED芯片61的材质包括磷化铝镓铟(AlGaInP)。可以理解的是，上述选材能够确定红光波段、蓝光波段以及绿光波段的半波宽以及波峰对应的波长位置，有利于获得符合本发明实施例提供的归一化光谱图的白光。
一种实施方式中，发光单元还包括填充于碗杯65的封装胶质64，绿色介质63与封装胶质64混合的比例范围为1:12～1:2。具体的，绿色介质63与封装胶质64混合的比例可选为1:12、1:11、1:10.5、1:8、1:6.5、1:4.5、1:3、1:2等。封装胶质64和绿色介质63通过搅拌机进行振荡完成混合均匀，搅拌条件可选为200s～400s，速度为1000n/min～2000n/min，如此设置，有利于将封装胶质64和绿色介质63混合均匀。另外，将封装胶质64和绿色介质63的混合物灌封于LED支架60的碗杯65后，通过在150℃烘烤3～4H，使得混合物固化，以完成封装。可以理解的是，通过满足绿色介质63与封装胶质64混合的比例在1:12和1:2之间，有利于调节第一波峰、第二波峰和第三波峰的高度(相对光功率)，以进一步精确定义光谱的辐射分布。
一种实施方式中，在CIE1931（也叫CIE 1931色彩空间）色度图中，白光在X轴的分布范围为0.31～0.39，在Y轴的分布范围为0.3～0.4，且白光的色温范围为4000K～7000K具体的，色温可选为4000K、4300K、4500K、4900K、5120K、5870K、6370K和7000K等。通过满足白光的色温在4000K和7000K之间，在充分体现本发明实施例提供的发光单元的显鲜效果的同时，光线较为容易被人眼适应，不会出现刺眼或者过暗的问题。而且，白光的CIE1931分布较为合理，有利于提高生鲜效果。
另一种示例的发光单元参见图39和图40所示，发光单元包括LED支架70、蓝光LED芯片71、红色介质72和绿色介质73。LED支架70具有碗杯75，蓝光LED芯片71设于碗杯75，红色介质72和绿色介质73混合填充于碗杯75并覆盖蓝光LED芯片71。蓝光LED芯片71激发红色介质72和绿色介质73，以发射出白光。
可选地，本示例中的蓝光LED芯片71可选为正装结构或倒装结构。例如如果是正装结构，蓝光LED芯片71可以通过固晶胶固定于LED支架70上，并在150℃的条件下烘烤1～2H，使固晶胶完全固化。如果是倒装结构，则蓝光LED芯片71可以通过高温锡膏固定于LED支架70上，并过回流焊，回流焊最高炉温290℃，时间为30s左右，且需要在氮气的环境下进行，使焊料完全熔融，并与蓝光LED芯片71和LED支架70完全贴合。另外，如果是正装结构的蓝光LED芯片71，则还需要完成焊线工艺，焊接线一般为0.9mil80％Au，采用S或M线弧工艺。焊线的布置以及连接方式视LED支架70结构以及蓝光LED芯片71的结构搭配而定，完成电路的导通即可。
请参见图41，本示例中白光的归一化光谱图满足以下条件：
光谱图包括红光波段和绿光波段，红光波段的半波宽为80nm～100nm，红光波段的波峰为第一波峰，第一波峰对应的相对光功率为0.75～0.95，第一波峰对应的波长为645nm～665nm，绿光波段的半波宽为45nm～70nm，绿光波段的波峰为第二波峰，第二波峰对应的波长为500nm～520nm。具体的，红光波段的半波宽可选为80nm、84nm、86nm、89nm、94nm、96nm、100nm等，优选为100nm，且半波范围为610nm～710nm。第一波峰对应的相对光功率可选为0.75、0.79、0.84、0.89、0.93、0.95等。第一波峰对应的波长可选为645nm、646nm、649nm、653nm、659nm、663nm、665nm等，优选为660nm。绿光波段的半波宽可选为45nm、46nm、49nm、53nm、55nm、61nm、67nm、69nm、70nm等，优选为70nm，且半波范围为480nm～550nm。第二波峰对应的波长可选为500nm、503nm、509nm、511nm、516nm、519nm、520nm等。
可以理解的是，若绿光波段的半波宽在45nm以下时，工艺成本较高且颜色容易失调，白色容易失真，不利于生鲜肉类的白色部位的颜色还原；若绿光波段的半波宽在70nm以上时，绿光波段占据的白光的比例过大，与红光产生干扰，红色容易失真，不利于生鲜肉类的红色部位的显色。通过设置蓝光LED芯片71激发红色介质72以及绿色介质73的方案，所激发出的红光波段的第一波峰对应的波长在645nm和665nm之间，红光穿透力较强，对生鲜食品的色泽还原较佳，第一波峰对应的相对光功率在0.75和0.95之间，红色显示效果较佳。同时，绿光波段的第二波峰对应的波长在500nm和520nm之间，且绿光波段的半波宽在45nm和70nm之间，绿光波段不容易干扰红光波段且不容易产生黄光，避免黄光影响生鲜肉类对红色饱和度的需求，从而进一步提高生鲜照明颜色还原程度，避免呈现影响购买欲望的茶色出现，能够呈现出与生鲜肉类较为匹配的红色。
一种实施方式中，请参见图41，第二波峰对应的相对光功率为0.4～0.7。具体的，第二波峰对应的相对光功率可选为0.4、0.5、0.6、0.7等。通过设置第二波峰的相对光功率在0.4和0.7之间，避免绿光饱和度过高而导致红色失真，以及饱和度过低而导致白色失真。
一种实施方式中，请参见图41，归一化光谱图还包括黄光波段，黄光波段对应的波长范围为560nm～590nm，黄光波谷的相对光功率为0.05～0.25。具体的，黄光波段的左侧与绿光波段相连，右侧与红光波段相连。黄光波段呈凹状，即黄光波段左侧和右侧对应的相对光功率要高于中部对应的相对光功率。通过设置黄光波谷的相对光功率为0.05和0.25之间，进一步降低了黄光的生成，避免黄光影响生鲜肉类对红色饱和度的需求，所导致茶色的出现，有利于呈现出与生鲜肉类较为匹配的红色。
一种实施方式中，请参见图41，归一化光谱图还包括蓝光波段，蓝光波段的半波宽为15nm～30nm。具体的，蓝光波段的半波宽可选为15nm、17nm、19nm、22nm、26nm、29nm、30nm等，其中优选为15nm，且半波范围为435nm～465nm。通过满足蓝光波段的半波宽在15nm～30nm之间，蓝光波段既能生产符合生鲜要求的白色，又能够不影响生鲜红色的显色。可以理解的是，当蓝光波段的半波宽在15nm以下时，制程较难，对晶片衬底要求很高。当蓝光波段的半波宽在30nm以上时，晶片整体亮度会下降很多，且容易导致白光失调而呈现出惨白色，不利于呈现白色部位的生鲜效果。
蓝光波段的波峰为第三波峰，第三波峰对应的相对光功率为0.9～1，第三波峰对应的波长为445nm～455nm。具体的，第三波峰的相对光功率可选为0.9、0.91、0.93、0.96、0.98和1等，优选为1。第三波峰对应的波长可选为445nm、447nm、449nm、451nm、452nm、454nm、455nm等，其中优选为450nm。通过设置第三波峰的相对光功率在0.9和1之间，在不影响白色显色的同时，还能进行较好的红色显色，有利于避免生鲜照明失真。第三波峰对应的波长在445nm和455nm之间，能够较好地生产符合白色部位生鲜要求的白色。
可以理解的是，红光波段的第一波峰对应的相对光功率在0.75～0.95之间，绿光波段对应的相对光功率在0.4和0.7之间，蓝光波段的第三波峰对应的相对光功率在0.9和1之间，以便于精确定义光谱的辐射分布。
一种实施方式中，请参见图41，归一化光谱图还包括青光波段，青光波段对应的波长范围为460nm～490nm，青光波谷的相对光功率为0.15～0.35。具体的，青光波段的左侧与蓝光波段相连，右侧与绿光波段相连。青光波段呈凹状，即青光波段左侧和右侧对应的相对光功率要高于中部对应的相对光功率。通过设置青光波谷的相对光功率在0.15和0.35之间，降低了青光的生成，避免青光影响生鲜红色的呈现，以及避免青光影响生鲜白色的呈现，有利于提高生鲜肉类的显鲜效果。
一种实施方式中，请参见图41，归一化光谱图还包括紫光波段，紫光波段对应的波长范围为350nm～420nm，紫光波段的相对光功率低于0.1。具体的，紫光波段与蓝光波段的左侧相连。紫光波段随着对应波长的减小而减小(减小至一定程度后基本不变)。通过满足紫光波段的相对光功率低于0.1，有助于降低惨白色呈现的几率，进而能够提高白色部位的生鲜效果。
一种实施方式中，请参见图41，归一化光谱图还包括与红光波段相邻的红外光波段，红外光波段对应的波长大于780nm，红外光波段的相对光功率低于0.1。具体的，红外光波段的左侧与红光波段相连。通过满足红外光波段的相对光功率低于0.1，有利于提高红光的饱和度，从而提高红色部位的生鲜效果。
一种实施方式中，请参见图41，红色介质72的材质包括氮化物，绿色介质73的材质包括β-Sialon和/或硅酸盐，蓝光LED芯片71的材质包括氮化镓(GaN)。具体的，绿色介质73可以仅包括β-Sialon和硅酸盐中的一者，也可以同时包括β-Sialon和硅酸盐。可以理解的是，上述选材能够确定红光波段、蓝光波段以及绿光波段的半波宽以及波峰对应的波长位置，有利于获得符合本发明实施例提供的归一化光谱图的白光。
一种实施方式中，请参见图41，红色介质72和绿色介质73的比例范围为1:13～1:4。具体的，红色介质72和绿色介质73的比例可选为1:13、1:12、1:9、1:7、1:6、1:5、1:4.5和1:4等。通过适配红色介质72和绿色介质73的混合比例，有利于调节第一波峰、第二波峰以及第三波峰的高度(相对光功率)，以便于精确定义光谱的辐射分布。
一种实施方式中，请参见图41，发光单元还包括填充于碗杯75的封装胶质50。红色介质72和绿色介质73的混合物与封装胶质50混合的比例范围为1:8～1:1.8。具体的，红色介质72和绿色介质73的混合物与封装胶质50的比例可选为1:8、1:7、1:6、1:5.5、1:5、1:4.5、1:3、1:2和1:1.8等。红色介质72和绿色介质73的混合物与封装胶质50通过搅拌机进行振荡完成混合均匀，搅拌条件可选为200s～400s，速度为1000n/min～2000n/min，如此设置，有利于将封装胶质50和绿色介质73混合均匀。另外，将封装胶质50和绿色介质73的混合物灌封于LED支架70的碗杯75后，通过在150℃的条件下烘烤3～4H，使得混合物固化，以完成封装。可以理解的是，通过满足绿色介质73与封装胶质50混合的比例在1:12和1:2之间，以便于调节第一波峰、第二波峰和第三波峰的高度，有利于进一步精确定义光谱的辐射分布。
一种实施方式中，在CIE1931色度图中，白光在X轴的分布范围为0.32～0.38，在Y轴的分布范围为0.275～0.34，且白光的色温范围为4000K～6200K。具体的，色温可选为4000K、4230K、4500K、4900K、5120K、5530K、5870K和6200K等。通过满足白光的色温在4500K和8000K之间，在充分体现本发明实施例提供的发光单元的显鲜效果的同时，光线较为容易被人眼适应，不会出现刺眼或者过暗的问题。而且，白光的CIE1931色度范围较为合理，有利于保证生鲜效果。
实施例七：
目前，背光模组为显示单元的关键零组件之一，用于给显示单元提供光源，轻薄、省电、HDR（High-Dynamic Range，高动态范围图像）是显示单元的发展趋势，这些需求要求背光模组中的LED发光单元具有尺寸小、亮度高、发光角度大的性能。目前的LED发光单元中，LED芯片发光角度受到LED支架的限制，LED支架限制了LED芯片的出光角度，进而使得LED发光单元整体发光亮度与发光角度都受到影响，如果通过增加LED芯片发光表面到背光模组出光面的混光距离或者通过增加LED颗数来实现增加发光亮度、增大发光角度，则无法满足显示器件轻薄、省电的需求，因此，如何增加LED发光单元的发光角度就成了亟需解决的问题。
针对上述问题，本实施例提供了一种可改善发光角度的发光单元，其包括LED芯片，以及LED支架，本实施例中的LED支架可采用上述各实施例所示的LED支架，也可采用其他具有碗杯结构的LED支架，本实施例对其不做限制。其中，LED芯片设于LED支架的碗杯的底部LED芯片的正、负电极分别与两个导电区电连接。发光单元还包括设于碗杯内的封装层，该封装层包括依次填充的第一封装胶层、第二封装胶层，第一封装胶层包覆LED芯片，第二封装胶层远离LED芯片的一面呈球面凸出形状；通过第一封装胶层以及呈球面凸出的第二封装胶层将LED芯片表面发出的光折射到LED器件外，第二封装胶层远离LED芯片的一面呈球面凸出形状使得LED器件发光角度增大，进而提升了整体发光角度，发光角度提升的同时，提升了LED器件的发光亮度。为了便于理解，本实施例下面结合附图所示的几种示例进行说明。
请参见图42，本实施例一种示例提供的发光单元包括：LED支架8，LED支架8包括正极基板81（即其中一个导电区），负极基板82（即另外一个导电区）以及将正极基板81与负极基板82绝缘隔离的隔离区83，还包括LED芯片84； LED支架8的封装体设置在正极基板81与负极基板82表面并围合形成碗杯，LED芯片84设置在正极基板81与负极基板82中的至少一个基板上；LED支架8与正极基板81和负极基板82形成的碗状结构内依次填充有第一封装胶层85、第二封装胶层86，第一封装胶层85包覆LED芯片84，第二封装胶层86远离LED芯片84的一面呈球面凸出形状,通过第一封装胶层和第二封装胶层86能够隔绝水汽，保护LED芯片84，同时，通过第一封装胶层85和第二封装胶层86将LED芯片84发射的光折射、反射、漫射出去，从而将LED芯片84表面射出的光向四周折射，增加了发光单元的发光角度。
在本示例中，第二封装胶层86完全覆盖第一封装胶层85，如图42所示；其中，第一封装胶层85和/或第二封装胶层86可以是透明胶水固化形成的透明胶层，该透明胶水包括但不限于环氧树脂、硅胶、硅树脂等；当然第一封装胶层85和/或第二封装胶层86也可以是由透明胶水和荧光粉混合后固化形成的荧光胶层。
应当理解的是，本示例中的正极基板81和负极基板82都是导电基板，本实施例中的导电基板可以为各种导电材质构成的基板，例如可为各种金属导电基板，包括但不限于铜基板、铝基板、铁基板、银基板等中的一种;导电基板也可以为包含导电材料的混合材料导电基板，例如导电橡胶等，能够通过银胶、绝缘胶等固晶胶将LED芯片84固定在至少一个导电基板上。其中，LED芯片84可以是正装LED芯片，此时可通过焊线与基板电连接，也可以是倒装LED芯片，可通过共晶工艺与基板电连接。其中LED芯片84发光面覆盖有不同厚度的反射层，根据不同需求，可以采用不同材质及厚度的反射层，将芯片出光半功率角增大，进而进一步增加发光单元的发光角度。
在本示例中，如图42所示，第一封装胶层85在LED支架8与正极基板81和负极基板82形成的碗状结构的高度h不超过封装体的高度H，应当理解的是，第一封装胶层85包覆LED芯片84，因此第一封装胶层85在碗状结构内的最低高度h超过LED芯片84的高度h1；在一些应用场景中，第一封装胶层85在碗状结构内的最低高度h是覆盖焊线，应当理解的是，覆盖焊线时其覆盖了LED芯片84；其中，第一封装胶层85完全覆盖LED芯片84，将LED芯片84表面发的光分别折射、漫射到第二封装胶层86与LED支架8上，增加了LED芯片84的出光角度。
在本实施例的另一示例中，如图43所示，第一封装胶层85的上表面与LED支架上表面齐平。
在本实施例的一些示例中，第一封装胶层85远离LED芯片84的表面可为向LED芯片84内凹的弧面，第一封装胶层85的内凹弧面可改变光线的反射角和折射角，使光线更容易射到LED支架8与第二封胶层86上，从而使发光单元的出光更均匀，如图43和图44所示，进而增大了发光单元的出光角度，其中，第一封装胶层85内凹后的最低高度为与LED芯片84齐平；应当理解的是，其中第一封装胶层85可以是直接从与LED支架8接触的地方直接开始向内凹，也可以是第一封装胶层85从透明支架开始保持一段水平状后，开始向内凹；应当理解的是，在一些示例中，第一封装胶层85为水平结构，其并未进行内凹。
在本实施例的一些示例中，第二封装胶层86的宽度E不大于碗状结构上表面的宽度e，进而将第二封装胶层86限定在发光单元的碗状结构上,提升其结合强度，如图45所示；应当理解的是，第二封装胶层86的宽度E最低为第一封装胶层85远离LED芯片84一面表面的宽度E1，进而完全覆盖第一封装胶层85，其中，第一封装胶层85完全覆盖LED芯片84，将LED芯片84表面发的光分别折射、漫射到第二封装胶层86与LED支架8上，第一封装胶层85将LED芯片84发出的光折射到第二封装胶层86上，第二封装胶层86进一步进行折射、漫射，增加了LED芯片84的出光角度；应当理解的是，当第一封装胶层85内凹时，第二封装胶层86靠近第一封装胶层85一侧表面向第一封装胶层85凸起，且凸出处与第一封装胶层85内凹处吻合，如图43和图44所示。
应当理解的是，第二封装胶层86远离LED芯片84的一面呈球面凸出形状，形成凸透镜状，可对光进行发散作用，进而增加了发光单元的出光角度；其中，第二封装胶层86的高度不受限制，也即，第二封装胶层86向外凸的弧度不受限制，优选的，参见图44所示，第二封装胶层86的自身高度k不超过LED支架8的高度K，进而使得第二封装角度向外凸的弧度在一个合理范围内。在本实施例的一些示例中，第一封装胶层85的折射率高于第二封装胶层86的折射率，且第二封装胶层86的折射率高于空气折射率，进而使LED芯片84发出的光通过第一封装胶层85进行折射后到达第二封装胶层86，再由第二封装胶层86折射到达外界，从而将LED芯片84正表面射出的光更多的向四周折射，增大发光单元的发光角度，发光单元最大的发光角度可达到180°。
在本实施例的一些示例中，LED支架8形成碗杯的封装体可为但不限于透明支架；也即LED支架8可以采用透明材质，例如透明树脂、透明的热塑性塑料如PPA(Polyphthalamide，聚邻苯二甲酞胺)等、透明的热固性塑料如EMC(Epoxy Molding Compound，环氧树脂环氧模塑封装材料)等，进而使得LED芯片84发出的光直接透过LED支架8到达外界，进一步增大发光单元的发光角度；应当理解的是，在一些示例中，LED支架8可以使用非透明支架采用的材料，例如限环氧树脂类(EP，Epoxide resin)、耐高温尼龙(PPA塑料)、聚邻苯二甲酰胺(PPA，Polyphthalamide)、聚对苯二甲酸 1 ，4-环己烷二甲醇酯 (P C T，P o l y 1 ，4-c y c l o h e x y l e n e d i m e t h y l e n e terephthalate)、液晶聚合物(LCP，Liquid Crystal Polymer)、片状模塑料(SMC，Sheetmolding compound)、环氧模塑料(EMC，Epoxy molding compound)、不饱和聚酯(UP)树脂、涤纶树脂(PET，Polyethylene terephthalate)、聚碳酸酯(PC，Polycarbonate)、聚己二酰己二胺(nylon66)、玻璃纤维等。
在本实施例的一些示例中，LED芯片84上设置有DBR（distributed bragg reflectors，分布式布拉格反射层）；例如，在LED芯片84正面镀DBR,减少正面出光，增加侧壁出光面积，从而进一步增大发光角度，再搭配透明的LED支架8，进而提升发光单元侧壁的出光效率，进而提升整体的出光效率。
在本实施例的一些示例中，LED支架8上表面为锯齿状C，如图46以及图47所示，LED支架8上表面为锯齿状能够在第二封装胶层86与LED支架8结合时，增强第二封装胶层86与LED支架8的结合能力；同时，LED支架8上表面为锯齿状能够限制第二封装胶层86的流动性，达到控制第二封装胶层86成形的目的。
在本实施例的一些示例中，LED芯片84包括红光LED芯片，绿光LED芯片，蓝光LED芯片和黄光LED芯片中的至少一种。具体可根据应用需求灵活设置，在此不再一一赘述。
在本实施例的一些示例中，还包括绝缘区83可设置为但不限于绝缘隔离带，绝缘隔离带位于正极基板81与负极基板82之间，将二者绝缘隔离，应当理解的时，绝缘隔离带的材质与LED支架8的材质可以相同，也可以不同。
为了更好的理解，本实施例提供一种更为具体的示例对发光单元进行说明，如图48所示，第一封装胶层85包覆LED芯片84，第一封装胶层85上表面与LED支架上表面齐平，且第一封装胶层85远离LED芯片84的表面为向LED芯片84内凹的弧面，第二封装胶层86的宽度与碗状结构上表面的宽度相同，完全覆盖第一封装胶层85，且二封装胶层6靠近第一封装胶层85一侧表面向第一封装胶层85凸起，且凸出处与第一封装胶层85内凹处吻合。第二封装胶层86远离LED芯片84的一面呈球面凸出形状，形成凸透镜状，可对光进行发散作用进而增加了发光单元的出光角度。
本实施例还提供一种发光组件，该发光组件可为但不限于背光模组，包括驱动电路以及上述发光单元，驱动电路与发光单元连接，该背光模组由于具有更大的发光的角度，因此可提升其显示效果，且可在相同的电路板面积下设置更少的发光单元达到相同甚至更好的显示效果，成本更低。本实施例还提供一种显示单元，包括上述背光模组以及背板，背光模组的驱动电路以及发光单元设置在背板上。
实施例八：
本实施例提供了一种发光组件，该发光组件可为但不限于背光模组、照明模组等，其包括电路板以及设于电路板上，并与电路板上对应的电路电连接的发光单元。本实施例中的发光单元可采用上述各实施例所示的发光单元，也可采用其他结构（例如免支架式LED）的发光单元，本实施例对其不做限制。
发光组件为背光模组时，背光模组在折叠显示屏中有着广泛的应用。现有技术的背光模组在折叠显示屏的多次弯折和恢复弯折的过程中，背光模组采用的柔性电路板容易产生与背面的支撑板的相对位移，使背光模组出现部分无法受到有效支撑保护的部分。针对该问题，本实施例的一种示例中提供了一种可解决该问题的背光模组，本示例中的背光模组的电路板为柔性电路板，背光模组则还包括支撑板和磁性贴，柔性电路板包括补强板和基材板，补强板固定于基材板，支撑板设有支撑槽，支撑槽收容至少部分补强板，也即补强板可整体设于支撑槽内，也可仅一部分设于支撑槽内，一部分位于支撑槽外。支撑槽设有面向基材板的开口端，支撑槽的开口端被基材板覆盖，支撑槽还设有槽底面，磁性贴固定于槽底面，磁性贴与补强板正对且平行设置，磁性贴与补强板磁吸配合，保证背光模组在多次弯折和恢复弯折过程中，通过相互磁吸的两块磁体保证所述柔性电路板和所述支撑板恢复到未弯折状态，提升了背光模组的结构稳定性。为了便于理解，本实施例下面结合附图所示的示例进行说明。
一种示例中，可设置支撑板的厚度大于支撑槽的高度，支撑板设于支撑槽后，支撑板的顶面可凸出于支撑槽从而位于支撑槽外，从而使得柔性电路板与支撑板之间具有一定的间隙，该间隙的存在既能在弯折过程中为柔性电路板和支撑板提供一定的弯折和形变恢复空间，又能减小二者之间弯折过程中接触时产生的摩擦力。
另一示例请参见图49和图50，柔性电路板90具有基材板901、焊盘903、发光单元904和补强板905，基材板901包括焊接部902，焊接部902设有第一面9021和与第一面9021相背的第二面9022，焊盘903固定于第一面9021，发光单元904固定于第一面9021，发光单元904的引脚对与对应的焊盘903堆叠焊接，补强板905贴合固定于焊接部902的第二面9022，补强板905与焊盘903对应设置。
柔性电路板90可以实现弯折和导电的作用，现有技术中发光单元904 固定于柔性电路板90的方式，一般采用将元气件的两端的引脚固定于柔性电路板90，在柔性电路板90弯曲的过程中，发光单元904的抗弯曲能力小于用以弯曲柔性电路板90的弯曲力，柔性电路板90没有对发光单元904的抗弯曲的方面的保护，所以在多次的弯折过程中，发光单元904受到弯曲力的作用很容易被折断。本实施例中的补强板905贴合固定于柔性电路板90远离发光单元904的一侧，补强板905采用硬材质，补强板905与焊接部902贴合，使得弯曲柔性电路板90的弯曲力传至补强板905，补强板905的内部应力用以抵消用以弯曲柔性电路板90的弯曲力，焊接部902不会产生弯折，发光单元904固定于第一面9021，且发光单元904与补强板905对应设置，进而位于第一面9021的发光单元904不会产生断裂。补强板905可加强焊接部902的硬度，使固定于焊接部902的发光单元904避免受到弯折的力，进而发光单元904不会随柔性电路板90的弯折而损坏。
柔性电路板90包括导电层906，导电层906设于第一面9021，导电层906可导通阵列排布的发光单元904。导电层906的作用是实现发光单元904的电极导出，在本实施方式中，导电层906的材质可为锡，锡可以很好的起到导电作用，且锡可易于将焊盘903与基材板901的焊接固定，当然也可替换为银、铜、铝、金等其他导电材质。
在本实施例的一些示例中，补强板905可选用磁性材料，优点在于，外部设备设有对应的金属材料，当柔性电路板90安装于外部设备时，不用采用传统的螺钉或者胶合的安装方式，补强板905具有磁吸力，柔性电路板90可直接安装于支撑板912。补强板905相比于传统的安装方式，具有便于安装，工序简单，且节省材料，不必再添加其他的固定配件，进而也降低了生产成本。
本实施例中的柔性电路板90应用于折叠屏幕时，折叠屏幕的特性要求一定的伸缩特性，且保证柔性电路板90不会损坏，传统的胶合固定的方式，将柔性电路板90固定于支撑板后，当柔性电路板90进行弯曲或者折叠时，焊接部902会受到较大的拉伸力，进而有可能造成柔性电路板90的电路断路。而本实施例中采用磁性材料作为补强板905，补强板905通过磁吸方式固定于支撑板912，多个焊接部902都与支撑板912磁吸固定，当屏幕进行弯曲或者折叠时，因为补强板905为磁吸的方式固定，所以相比于胶合的固定方式，具有很好的缓冲效果，对于柔性电路板90也能起到保护作用。
请参见图51，本申请还提供了一种发光组件，该发光组件可为背光模组91，背光模组91包括柔性电路板90、支撑板912和磁性贴913，柔性电路板90包括补强板905和基材板901，补强板905固定于基材板901，支撑板912设有支撑槽9121，支撑槽9121收容至少部分补强板905，支撑槽9121设有面向基材板901的开口端，支撑槽9121的开口端被基材板901覆盖，支撑槽9121还设有槽底面9124，磁性贴913固定于槽底面9124，磁性贴913与补强板905正对且平行设置，磁性贴913与补强板905磁吸配合。支撑板912用以固定柔性电路板90，现有技术中，支撑板912与柔性电路板90直接贴合固定，在应用到折叠屏或者曲面屏时，支撑板912很容易导致柔性电路板90断裂，对于产品的质量有着很大的隐患。在本实施方式中，支撑板912设有多个支撑槽9121，多个支撑槽9121对应于柔性电路板90的多个焊接部902设置，支撑槽9121的槽底面9124与第二面9022平行。柔性电路板90对应安装到支撑板912，磁性贴913为具有磁性物质的材料，在本实施方式中，磁性贴913可采用磁体，磁性贴913面对补强板905的一面与补强板905的磁极相反，即磁性贴913的N极面对补强板905的S极，或磁性贴913的S极面对补强板905的N极，磁性贴913背离补强板905的一面贴合固定于槽底面9124，磁性贴913与补强板905之间存在相互吸引的磁力，进而将柔性电路板90与支撑板912固定。在一实施例中，磁性贴913固定于支撑板912，补强板905固定于发光单元904，补强板905与磁性贴913磁吸固定，且补强板905与磁性贴913相互贴合。通过补强板905与磁性贴913的固定，进而实现发光单元904与支撑板912之间相对位置的固定，提升了产品的结构稳定性。
参见图51所示，磁性贴913与补强板905之间存在距离。支撑槽9121的侧壁具有靠近其槽口的槽侧面9122，还具有连接该槽侧面9122并位于槽口和支撑槽9121的槽底面之间的贴板面9123，如图所示，在本示例中贴板面9123形成为台阶面，贴板面9123与槽底面9124存在间距，补强板905与槽侧面9122存在间隙，补强板905与贴板面9123贴合。支撑板912、补强板905与磁性贴913之间存在相互吸引的力，当支撑板912弯折时，柔性电路板90受到偏向力，柔性电路板90产生与支撑板912相对移动的趋势，此时，磁吸力会产生用以抵抗偏向力的偏向磁吸力，随着支撑板912弯折程度的增大，柔性电路板90受到的偏向力也越大，当柔性电路板90受到的偏向力大于柔性电路板90与磁性贴913之间的偏向磁吸力时，柔性电路板90与支撑板912错开。
当背光模组91弯折动作结束，背光模组91恢复平整的过程中，磁性贴913与补强板905之间存在相互吸引的偏向磁吸力，引导发光单元904与支撑板912恢复正对的相对位置，磁性贴913与补强板905之间存在的磁吸力对发光单元904与支撑板912起到了导正作用。相比与传统技术，本实施方式中的支撑板912对应焊接部902 设置支撑槽9121，以及增加磁性贴913收容于支撑槽9121，本实施方式更加环保，不再需要包胶工艺的这一流程，降低了生产成本，且通过磁吸的方式将柔性电路板90与支撑板912固定，直接将柔性电路板90与支撑板912对应放置即可完成装配，简化了安装的装配流程。
设置槽侧面9122与贴板面9123作用在于，柔性电路板90与支撑板912错开时，柔性电路板90可以沿平行于磁性贴913的平面进行移动，贴板面9123贴合补强板905，即补强板905位于柔性电路板90与贴板面9123以及槽侧面9122之间，补强板905与支撑板912相对移动时，补强板905带动柔性电路板90沿平行于第二面9022的方向移动，保障了柔性电路板90与支撑板912的贴合，进而避免了折叠屏幕或者曲面屏幕在过程中，显示不均匀或者光线出现显示斑点等情况。
    在本实施方式中，补强板905设有第三面9051与第四面9052，第三面9051与柔性电路板90的第二面9022贴合，第四面9052正对磁性贴913，磁性贴913设有第五面9131与第六面9132，第五面9131朝向补强板905，第六面9132贴合槽底面9124。在本实施方式中，第五面9131的面积小于第四面9052的面积，作用在于，补强板905与磁性贴913之间的磁性范围更大，补强板905受到磁性贴913的吸引力的范围更广。柔性电路板90与支撑板912产生相对移动的范围也更大，进而使折叠屏幕或者曲面屏幕的弯曲程度更大。
在本实施方式中，补强板905与柔性电路板90贴合的部分为第三面9051，即第三面9051的面积为补强板905对柔性电路板90的保护面积。所以增加第三面9051的面积可增大对柔性电路板90的保护，但不利于背光模组91的折叠。在本实施方式中，补强板905的保护区域与发光单元904正对，即第三面9051的区域可对应焊盘903的区域。保证了背光模组91使用过程中，能够有很好的折叠效果且不影响补强板905对发光单元904的保护。
本实施例还提供了一种电子设备，参见图52和图53所示，电子设备92还包括控制电路板95和外壳93，控制电路板95收容于外壳93，控制电路板95均与背光模组91 导通连接，控制电路板95电连接柔性电路板90，外壳93设有第一边缘侧935，支撑板912设有与第一边缘侧935正对的第二边缘侧9126，第二边缘侧9126与第一边缘侧935 固定。
电子设备92还包括位于控制电路板95远离柔性电路板90一侧的驱动件94，驱动件94用以对电子设备92受到的电压进行调节。
在本实施方式中，电子设备92可以为电视、平板电脑或手机。背光模组91主要应用具有可折叠屏幕或曲面屏幕的电子设备92上。例如电子设备92为手机时，外壳93对应背光模组91的折叠区设置，用户使用过程中，背光模组91与外壳93同步弯折，实现电子设备92的展开与折叠。因为背光模组91中的补强板905，进而背光模组 20相比于现有技术，能够实现多次弯折且不损坏柔性电路板90上的发光单元904，进而增加了背光模组91的使用寿命，提升了电子设备92质量。
实施例九：
发光组件在使用过程中，发光单元会产生大量的热量，因此发光组件的散热问题一直是其设计过程中考虑的一个重点。例如，现有技术中，可以通过在LED芯片表面设置导热体，并使用风扇强制对流以将导热体上的热量导出；或通过水泵实施水冷换热，但在散热过程中，会产生额外的功耗。针对该问题，本实施例的另一示例还提供了一种散热性能好，且节能的发光组件，该发光组件的电路板可采用上述示例中的柔性电路板，也可采用刚性电路板，本示例中对其不做限制。
本示例中的发光组件还包括驱动芯片和脉动热管，其中电路板包括灯珠区域以及驱动芯片区域；发光单元和驱动芯片分别设于灯珠区域和驱动芯片区域，脉动热管的蒸发段设置于驱动芯片区域上，脉动热管内设有工质，且处于蒸发段的工质朝远离驱动芯片的方向移动时接近脉动热管的冷凝段；通过脉动热管将驱动芯片区域的热量带出至远离驱动芯片的冷凝段进行散热，且脉动热管的换热形式为被动换热，无需外部的额外驱动，仅通过驱动芯片区域所发出的热力即可实现工作，能够节省功耗，且导热效果好。为了便于理解，本实施例下面结合附图所示的示例进行说明。
本实施例提供的发光组件请参见图54至图60所示，其包括电路板101以及脉动热管104。
电路板101包括灯珠区域和驱动芯片区域，灯珠区域设有多个发光单元102，该发光单元102可为上述各实施例所示的发光单元102，也可采用其他发光单元102，例如可直接采用LED芯片或其他结构的LED灯珠，这些发光单元102可包括但不限于各种颜色的发光单元，发光单元102可呈阵列排布形成LED阵列，也可采用其他的设置方式，在此不再一一赘述。驱动芯片区域可包括但不限于用于驱动发光单元102进行发光的驱动芯片103，也可以在该驱动芯片区域设置有其他芯片，驱动芯片103可包括一颗或多颗。
在一些应用示例中，如图54，电路板101为双面电路板，包括设置有阵列排布的发光单元102的灯珠区域；以及驱动芯片区域，驱动芯片设置于电路板101一侧边的中部，且与发光单元102分别布置在电路板101的两面上。电路板101上设有多颗驱动芯片103，驱动芯片103通过电路板101上的电路图案连接发光单元102并进行驱动。
如图55所示，本实施例的发光组件还包括脉动热管104，该脉动热管104的蒸发段设置于驱动芯片区域上，脉动热管104内处于蒸发段的工质朝远离驱动芯片103的方向移动时接近脉动热管104的冷凝段。脉动热管蒸发段设置于驱动芯片区域，用于将驱动芯片区域上例如驱动芯片103等器件所发出的热量导出，可以理解的是，驱动芯片103发热量通常较大，发光组件上设置驱动芯片103等器件的区域往往也是发光组件中温度较高的区域。脉动热管104的冷凝段设置在远离驱动芯片103的位置，因此冷凝段能够处于温度较低的区域，有效的将脉动热管104中传导的热量散发出去。如图56所示，脉动热管104的内部，随机相间的分布填充有液塞1041和气塞1042构成的工质，这些工质在没有热量传输的情况下通常是处于平衡静止状态，处于静止状态的工质受力主要包括气塞1042之间的压力、液塞1041所受毛细力和工质所受重力。而当外部有加热时，毛细力、重力以及气塞1042的气泡受热膨胀产生的压力为工质的流动提供动力。本示例中，脉动热管内的流体工质在蒸发段吸收驱动芯片区域的多余热量后，流动至冷凝段，冷凝段将热量释放到空气中，从而能够起到对驱动芯片区域的散热效果。脉动热管的应用，使得驱动芯片区域的热量快速导出，并且，脉动热管无需接收外部的额外驱动，仅仅通过驱动芯片区域所发出的热力即可实现工作，能够节省功耗，且导热效果好。
一些应用示例中，发光单元102和驱动芯片103不在电路板101的同一面上混合布置，也即发光单元102和驱动芯片103可以处于电路板101同一面的不同位置，或是电路板101上不同面的相对应位置或不相应的位置；脉动热管104可以直接设置于驱动芯片103上，调整好其大小和布置的位置则不会对发光单元102的发光形成阻挡。还在一些实施过程中，可以使用导热性能较好的电路板101，发光单元102和驱动芯片103也可以混合的布置在电路板同一面上，脉动热管可以设置在电路板另一面，脉动热管迅速将驱动芯片传递给电路板的热量导出散热。
一些应用示例中，如图57，发光组件还包括导热片105，该导热片105设置于脉动热管104与驱动芯片103之间。导热片105可以促使驱动芯片103的热量较为均匀的传导至脉动热管104，提升脉动热管104的实际散热效率。该导热片可以为铜片或其他导热性较好的材料形成的导热片。
一些应用示例中，导热片105与脉动热管104和/或驱动芯片103之间设置有硅脂。作为一种示例，在导热片105的两面都设置有硅脂，导热片105的一面贴附到驱动芯片区域上，与驱动芯片区域的驱动芯片103的接触，脉动热管104则贴在导热片105的另一面。实际应用中，可以仅在导热片105与驱动芯片103或脉动热管104接触的区域设置硅脂，也可以使导热片105的两面整体分别设置一层硅脂。设置硅脂不仅能够辅助导热片105与脉动热管104和/或驱动芯片103的连接，也能够通过硅脂扩大导热的接触面积，保证导热的效率。
一些应用示例中，脉动热管104可包括散热肋片，该散热肋片与脉动热管104的管体接触，脉动热管104的管体上的热量可传导至散热肋片，通过散热肋片进行散热，加装的散热肋片增大了脉动热管散热的有效面积，使得热量更高效的散发到空气中。散热肋片具体设置在冷凝段，并与冷凝段的管体接触，使冷凝段的热量快速散发。当然，本实施例也不排除散热肋片还可以设置到脉动热管的更多位置，例如散热肋片也可以从冷凝段一直设置至脉动热管的绝热段，绝热段处于蒸发段和冷凝段之间。
一些应用示例中，脉动热管的冷凝段可伸出电路板，例如请参见图58以及图59，其中图58示出电路板101设置有发光单元102的一面，图59示出电路板101设置驱动芯片103的一面（发光单元以及驱动芯片未示出）。脉动热管104的冷凝段设置在电路板101以外的区域，脉动热管104将电路板101的驱动芯片区域的热量导出后，传递至电路板101以外进行散热，进一步保证散热的效果，避免大量热量留存在电路板101上。但应当说明的是，在实际应用中，虽然该脉动热管104的冷凝段伸出电路板，但其仍可能处于使用该发光组件的发光装置的内部。由于冷凝段在电路板101以外的区域，其周围也有着较大的空间，在这些实施方式中，散热肋片可以设置为套入该冷凝段的结构，例如图60示出的散热肋片106的一种具体结构，散热肋片106整体为矩形片状体，其开设有多个通孔1061，各个通孔1061的孔径与脉动热管104的管体的外径一致，脉动热管104的管体穿过这些通孔1061，从而使得散热肋片106设置在脉动热管104的管体上，且与管体接触，脉动热管104上可设置多块散热肋片106，从而提升散热效率。
一些应用示例中，驱动芯片区域设有多个驱动芯片103，各驱动芯片103至少部分被脉动热管104的蒸发段在电路板101上的投影覆盖。也就是说，脉动热管104完全的覆盖至驱动芯片区域的所有驱动芯片103，保证每一个驱动芯片103的热量都能够得到有效导出。在一些示例中，脉动热管104与驱动芯片130之间设置有导热片105，导热片105的大小可以设置为不小于驱动芯片区域的大小，导热片105同样覆盖所有的驱动芯片103，脉动热管104设置在该导热片105的另一面。请再参见图59，本实施例的脉动热管104可包括多个U型管体，各个U型管体之间通过U型弯头相互连通，脉动热管104的内部循环导通，且U型管体长度方向上的两端分别为蒸发段和冷凝段。即脉动热管内的流体工质，若朝同一方向持续流动，能够回到原有的位置。这些U型管体依次排列，且可以设置U型管体之间的间隙较小，即U型管体之间紧密的排列，以在同样的面积范围内能够设置更多的U型管体，保证散热能力。在其他实施方式中，脉动热管也可以替换为其他的形状，在此不再一一赘述。
本实施例的发光组件，包括电路板和脉动热管，脉动热管的蒸发段设置在电路板的驱动芯片区域，冷凝段的位置远离该驱动芯片区域，通过脉动热管将驱动芯片区域的热量导出且在冷凝段散热，无需额外的能量进行驱动，节省功率。且脉动热管有利于制作为微型化的结构和且均匀的导热，在发光组件上即使布置空间小也能够发挥良好的效果。
根据本申请上述各实施例的记载可知，上述各实施例中所提供的LED支架、发光单元和发光组件可应用于各种发光领域，例如制作成背光模组应用于显示背光领域（可以是电视、显示器、手机等终端的背光模组），按键背光领域、拍摄领域、家用照明领域、医用照明领域、装饰领域、汽车领域、交通领域等。应用于按键背光领域时，可以作为手机、计算器、键盘等具有按键设备的按键背光光源；应用于拍摄领域时，可以制作成摄像头的闪光灯；应用于家用照明领域时，可以制作成落地灯、台灯、照明灯、吸顶灯、筒灯、投射灯等；应用于医用照明领域时，可以制作成手术灯、低电磁照明灯等；应用于装饰领域时可以制作成各种装饰灯，例如各种彩灯、景观照明灯、广告灯；应用于汽车领域时，可以制作成汽车车灯、汽车指示灯等；应用于交通领域时，可以制成各种交通灯，也可以制成各种路灯。上述应用仅仅是本实施例所示例的几种应用，应当理解的是本实施例中的发光装置的应用并不限于上述示例的几种领域。
应当理解的是，本申请的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本申请所附权利要求的保护范围。

Claims (18)

  1. 一种LED支架，其特征在于，包括封装体以及部分被所述封装体覆盖的基板，所述封装体形成有碗杯，所述基板的一部分位于所述碗杯内作为所述碗杯的底部；所述基板包括位于所述碗杯内的两个导电区，且所述两个导电区之间设有将二者绝缘隔离的绝缘区；
    所述基板包括基板主体，自所述基板主体延伸至所述碗杯的侧壁内的支撑部，所述支撑部在所述侧壁内从其中一个所述导电区向另一个所述导电区延伸，并至少延伸至所述绝缘区在所述侧壁上对应的侧壁区域。
  2. 如权利要求1所述的LED支架，其特征在于，所述基板包括两个所述被绝缘区绝缘隔离的子基板，所述两个子基板位于所述碗杯内的区域分别构成所述两个导电区；所述支撑部包括自其中一个所述子基板的基板主体延伸至所述碗杯的侧壁内的支撑部，或，自其中一个所述子基板的基板主体相对的两侧分别延伸至所述碗杯相对的两个侧壁内的两个支撑部，或分别自所述两个子基板的基板主体的一侧延伸至所述碗杯的侧壁内的两个支撑部；
    和/或，所述支撑部在所述侧壁内从其中一个所述导电区向另一个所述导电区延伸，并穿过所述绝缘区在所述侧壁上对应的侧壁区域；
    和/或，所述支撑部在所述侧壁内向所述碗杯的杯口延伸；
    和/或，所述支撑部在所述侧壁内的顶端的延伸方向，与所述基板主体之间的夹角大于等于90°，小于180°；
    和/或，所述支撑部靠近所述基板主体的部分为弧形部；
    和/或，所述支撑部与所述基板主体为一体成型结构。
  3. 如权利要求1所述的LED支架，其特征在于，所述两个导电区内分别设于所述基板主体的第一表面，所述两个导电区内分别设有第一导电层和第二导电层，所述第一导电层和所述第二导电层中的至少之一的边缘设有多个第一凹槽，所述基板主体上设有至少两个导电通孔，且所述第一导电层和所述第二导电层分别与不同的所述导电通孔电连接；
    所述基板还包括覆盖在所述基板主体的第二表面上的第三导电层和第四导电层，所述第三导电层与所述第一导电层通过对应的所述导电通孔电连接，所述第四导电层与所述第二导电层通过对应的所述导电通孔电连接；所述第一表面和所述第二表面为相对的两个面。
  4. 如权利要求3所述的LED支架，其特征在于，所述导电通孔中设置有导电金属层，所述导电金属层用于与所述第一表面以及所述第二表面上对应的导电层接触；
    和/或，所述第一导电层、所述第二导电层、所述第三导电层以及所述第四导电层包括铜层，所述第一导电层、所述第二导电层、所述第三导电层以及所述第四导电层中的至少一个还包括金属镀层，所述金属镀层包括化学性质比铜更稳定的导电金属，所述金属镀层覆于所述铜层的表面；
    和/或，所述第一凹槽的形状包括弧形、矩形、锯齿形中的至少一种；
    和/或，所述基板主体包括陶瓷基材。
  5. 如权利要求1所述的LED支架，其特征在于，所述基板被所述封装体覆盖的区域设有第二凹槽，覆盖于所述基板上的所述封装体的一部分填充于所述第二凹槽内。
  6. 如权利要求5所述的LED支架，其特征在于，所述碗杯的开口尺寸自所述碗杯的底部向远离所述基板的方向逐渐增大；
    和/或，所述碗杯的内壁连接在所述第二凹槽的槽口靠近所述碗杯中心的一侧；
    所述碗杯的内壁在所述基板的剖切面内的投影形状为直线或曲线，所述剖切面垂直于所述基板表面；
    和/或，所述封装体覆盖在所述第二凹槽两侧的基板表面，所述碗杯的内壁在所述基板的剖切面内的投影形状包括与所述基板表面垂直连接的第一段和相对于所述基板表面倾斜设置的第二段，所述剖切面垂直于所述基板表面；
    和/或，所述基板上设有所述导电区的一面上还设有用于固定芯片的第三凹槽。
  7. 如权利要求1所述的LED支架，其特征在于，所述基板主体包括相背的第一表面和第二表面，所述两个导电区设于所述第一表面，所述导电区包括在所述第一表面上依次层叠设置的第一铜镀层、镍镀层、第二铜镀层和银镀层，所述第一铜镀层的厚度大于所述第二铜镀层的厚度，所述镍镀层用于阻挡所述第一铜镀层中的铜离子迁移至所述第二铜镀层中。
  8. 如权利要求7所述的LED支架，其特征在于，所述基板还包括在所述基板主体的所述第二表面上依次层叠设置的所述第一铜镀层、所述镍镀层、所述第二铜镀层和所述银镀层；
    和/或，所述镍镀层的厚度范围为0.125um～2.5um;
    和/或，所述第二铜镀层的厚度范围为0 .0625um～1um;
    和/或，所述第一铜镀层的厚度范围为0.5um～5um;
    和/或，所述银镀层的厚度范围为0.25um～5um;
    和/或，所述LED支架还包括设于所述第一表面和/或所述第二表面上的所述银镀层之上的钯镀层，所述钯镀层用于保护所述银镀层；所述银镀层的厚度范围为0.0025um～0.25um。
  9. 如权利要求1所述的LED支架，其特征在于，所述基板主体具有相对的第一表面和第二表面，所述基板主体位于所述碗杯内的区域开设有自所述第一表面向所述第二表面下凹且未贯穿所述第二表面的第四凹槽，所述第二表面远离所述碗杯；所述基板包括设于所述第四凹槽内被所述绝缘区绝缘隔离的第一焊盘和第二焊盘，所述第一焊盘和所述第二焊盘均自所述第四凹槽的底壁延伸至所述基板主体的第二表面，所述第一焊盘和所述第二焊盘位于所述第四凹槽内的部分分别构成所述两个导电区。
  10. 如权利要求9所述的LED支架，其特征在于，所述第四凹槽的形状与LED芯片的形状对应；
    和/或，所述第四凹槽的个数为一个以上，每一个所述第四凹槽用于设置至少一颗所述LED芯片;
    和/或，所述基板主体包括相对设置的第一侧面和第二侧面，所述第一焊盘自所述第四凹槽的底壁经所述第一表面、所述第一侧面延伸至所述第二表面，所述第二焊盘自所述第四凹槽的底壁经所述第一表面、所述第二侧面延伸至所述第二表面，所述第一焊盘和所述第二焊盘在所述第四凹槽内相对于所述第四凹槽的底壁的中垂线对称设置；
    和/或，所述LED支架还包括设于所述基板主体的所述第二表面上的加强件，所述加强件在所述第二表面上设置的位置，与所述绝缘区在所述基板主体上的投影区相对应；所述加强件远离所述基板主体的表面设有阻焊层；所述第二表面上位于所述第一焊盘和所述第二焊盘之间具有间隙；所述加强件与所述第一焊盘，或所述第二焊盘为一体式结构，或所述加强件设于所述间隙内，并与所述第一焊盘和所述第二焊盘均设有间隔间距。
  11. 一种发光单元，其特征在于，包括LED芯片，以及如权利要求1所述的LED支架，所述LED芯片设于所述碗杯的底部，所述LED芯片的正、负电极分别与所述两个导电区电连接；
    所述发光单元还包括设于所述碗杯内的封装层。
  12. 如权利要求11所述的发光单元，其特征在于，所述封装层包括依次填充的第一封装胶层、第二封装胶层，所述第一封装胶层包覆所述LED芯片，所述第二封装胶层远离所述LED芯片的一面呈球面凸出形状；
    和/或，所述第一封装胶层在所述碗状内的高度不超过所述LED支架的高度；
    和/或，所述第一封装胶层远离所述LED芯片的表面为向所述LED芯片内凹的弧面；
    和/或，所述第二封装胶层的宽度不大于所述碗状上表面的宽度；
    和/或，所述第一封装胶层的折射率高于所述第二封装胶层的折射率，且所述第二封装胶层的折射率高于空气折射率；
    和/或，所述封装体为透明封装体；
    和/或，所述LED芯片上设置有分布式布拉格反射层；
    和/或，所述封装体的上表面为锯齿状；
    和/或，所述LED芯片包括红光LED芯片，绿光LED芯片和蓝光LED芯片中的至少一种。
  13. 如权利要求11所述的发光单元，其特征在于，所述LED芯片包括红光LED芯片和蓝光LED芯片，所述封装层包括绿色介质，所述绿色介质填充于所述碗杯并覆盖所述红光LED芯片和所述蓝光LED芯片，所述红光LED芯片和所述蓝光LED芯片激发所述绿色介质，以发射出白光，所述白光的归一化光谱图满足条件：
    所述归一化光谱图包括第一红光波段和绿光波段，所述第一红光波段的半波宽为15nm～30nm，所述第一红光波段的波峰为第一波峰，所述第一波峰对应的相对光功率为0.9～1，所述第一波峰对应的波长为645nm～665nm，其中：
    所述绿色介质的材质包括β-Sialon，所述蓝光LED芯片的材质包括氮化镓，所述红光LED芯片的材质包括磷化铝镓铟；
    和/或，所述封装层还包括填充于所述碗杯的封装胶质，所述绿色介质与所述封装胶质混合的比例范围为1:12～1:2；
    和/或，所述白光在CIE1931色度图中，在X轴的分布范围为0.31～0.39，在Y轴的分布范围为0.3～0.4，且所述白光的色温范围为4000K～7000K；
    和/或，所述归一化光谱图还包括以下波段中的至少之一：
    绿光波段，所述绿光波段的半波宽为35nm～60nm，所述绿光波段的波峰为第二波峰，所述第二波峰对应的相对光功率为0.2～0.4，所述第二波峰对应的波长为530nm～550nm；
    蓝光波段，所述蓝光波段的半波宽为15nm～30nm，所述蓝光波段的波峰为第三波峰，所述第三波峰对应的相对光功率为0.3～0.5，所述第三波峰对应的波长为445nm～455nm；
    黄光波段，所述黄光波段对应的波长范围为585nm～630nm，所述黄光波谷的相对光功率低于0.15；
    青光波段，所述青光波谷对应的波长范围为465nm～515nm，所述青光波段的相对光功率低于0.1；
    紫光波段，所述紫光波段对应的波长范围为350nm～420nm，所述紫光波段的相对光功率低于0.1；
    与所述第一红光波段相邻的第二红光波段，所述第二红光波段对应的波长范围为680nm～780nm，所述第二红光波段的相对光功率低于0.1。
  14. 如权利要求11所述的发光单元，其特征在于，所述LED芯片包括蓝光LED芯片，所述封装层包括红色介质和绿色介质，所述红色介质和所述绿色介质填充于所述碗杯并覆盖所述蓝光LED芯片，所述蓝光LED芯片激发所述红色介质和所述绿色介质，以发射出白光，所述白光的归一化光谱图满足条件：
    所述光谱图包括红光波段和绿光波段，所述红光波段的半波宽为80nm～100nm，所述红光波段的波峰为第一波峰，所述第一波峰对应的相对光功率为0.75～0.95，所述第一波峰对应的波长为645nm～665nm，所述绿光波段的半波宽为45nm～70nm，所述绿光波段的波峰为第二波峰，所述第二波峰对应的波长为500nm～520nm，其中：
    所述第二波峰对应的相对光功率为0.4～0.7；
    和/或，所述红色介质的材质包括氮化物，所述绿色介质的材质包括β-Sialon和/或硅酸盐，所述蓝光LED芯片的材质包括氮化镓；
    和/或，所述红色介质和所述绿色介质的比例范围为1:13～1:4；
    和/或，所述封装层还包括填充于所述碗杯的封装胶质，所述红色介质和所述绿色介质的混合物与所述封装胶质混合的比例范围为1:8～1:1.8；
    和/或，所述白光在CIE1931色度图中，在X轴的分布范围为0.32～0.38，在Y轴的分布范围为0.275～0.34，且所述白光的色温范围为4000K～6200K；
    和/或，所述归一化光谱图还包括以下波段中的至少之一：
    蓝光波段，所述蓝光波段的半波宽为15nm～30nm，所述蓝光波段的波峰为第三波峰，所述第三波峰对应的相对光功率为0.9～1，所述第三波峰对应的波长为445nm～455nm；
    黄光波段，所述黄光波段对应的波长范围为560nm～590nm，所述黄光波谷的相对光功率为0.05～0.25；
    青光波段，所述青光波段对应的波长范围为460nm～490nm，所述青光波谷的相对光功率为0.15～0.35；
    紫光波段，所述紫光波段对应的波长范围为350nm～420nm，所述紫光波段的相对光功率低于0.1；
    与所述红光波段相邻的红外光波段，所述红外光波段对应的波长大于780nm，所述红外光波段的相对光功率低于0.1。
  15. 如权利要求11所述的发光单元，其特征在于，所述两个导电区内分别设于所述基板主体的第一表面，所述两个导电区内分别设有第一导电层和第二导电层，所述第一导电层和所述第二导电层中的至少之一的边缘设有多个第一凹槽，所述基板主体上设有至少两个导电通孔，且所述第一导电层和所述第二导电层分别与不同的所述导电通孔电连接；
    所述基板还包括覆盖在所述基板主体的第二表面上的第三导电层和第四导电层，所述第三导电层与所述第一导电层通过对应的所述导电通孔电连接，所述第四导电层与所述第二导电层通过对应的所述导电通孔电连接；所述第一表面和所述第二表面为相对的两个面；
    所述LED芯片的正极与所述第一导电层焊接，所述LED芯片的负极与所述第二导电层焊接；所述封装层设于所述基板主体的第一表面，包覆所述第一导电层、所述第二导电层以及所述LED芯片，且所述封装层的一部分填充于所述第一凹槽中；
    所述发光单元还包括齐纳二极管，所述齐纳二极管设于所述基板主体的第一表面，所述齐纳二极管的正极与所述第二导电层焊接，负极与所述第一导电层焊接，且所述齐纳二极管也被所述封装层所包覆；
    和/或，所述第一导电层和所述第二导电层的边缘上的多个所述第一凹槽位于所述LED芯片所覆盖的区域以外的位置；若所述发光单元还包括齐纳二极管，则多个所述第一凹槽还位于所述齐纳二极管所覆盖的区域以外的位置。
  16. 一种发光组件，其特征在于，所述发光组件包括电路板和如权利要求11所述的发光单元，所述发光单元设于所述电路板上，并与所述电路板电连接。
  17. 如权利要求16所述的发光组件，其特征在于，所述发光组件还包括驱动芯片和脉动热管；
    所述电路板包括灯珠区域以及驱动芯片区域；所述发光单元和所述驱动芯片分别设于所述灯珠区域和所述驱动芯片区域，所述脉动热管的蒸发段设置于所述驱动芯片区域上，所述脉动热管内设有工质，且处于所述蒸发段的所述工质朝远离所述驱动芯片的方向移动时接近所述脉动热管的冷凝段，其中：
    所述灯珠区域与所述驱动芯片区域分别设置于所述电路板的相对的两面；
    和/或，所述发光组件还包括导热片，所述导热片设置于所述脉动热管与所述驱动芯片之间;所述导热片与所述脉动热管和/或所述驱动芯片之间设置有硅脂;
    和/或，所述脉动热管还包括散热肋片，所述散热肋片至少设置于所述脉动热管的所述冷凝段，并与所述冷凝段的管体接触;
    和/或，所述脉动热管的所述冷凝段伸出所述电路板;
    和/或，所述驱动芯片区域设有多个所述驱动芯片，各所述驱动芯片至少部分被所述蒸发段在所述电路板上的投影覆盖；
    和/或，所述脉动热管包括多个U型管体，所述U型管体之间通过U型弯头相互连通，使所述脉动热管的内部循环导通，所述U型管体长度方向上的两端分别为所述蒸发段和所述冷凝段。
  18. 如权利要求16所述的发光组件，其特征在于，所述发光组件还包括支撑板和磁性贴，所述电路板为柔性电路板，所述柔性电路板包括补强板和基材板，所述补强板固定于所述基材板，所述支撑板设有支撑槽，所述支撑槽收容至少部分所述补强板，所述支撑槽设有面向所述基材板的开口端，所述支撑槽的开口端被所述基材板覆盖，所述支撑槽还设有槽底面，所述磁性贴固定于所述槽底面，所述磁性贴与所述补强板正对且平行设置，所述磁性贴与所述补强板磁吸配合，其中：
    所述补强板为磁性材料；
    和/或，所述支撑板与所述基材板部分贴合；
    和/或，所述柔性电路板设有焊接部，所述焊接部具有相背的第一面和第二面，所述柔性电路板还包括焊盘，所述焊盘固定于所述第一面，所述发光单元固定于所述焊盘上，所述补强板固定于所述第二面上，并与所述焊盘正对；
    和/或，所述发光单元阵列排布于所述第一面；
    和/或，所述柔性电路板包括导电层，所述导电层固定于所述第一面，所述导电层导通阵列排布的所述发光单元；
    和/或，所述支撑槽的侧壁具有靠近槽口的槽侧面，以及连接所述槽侧面并位于所述槽口和所述支撑槽的槽底面之间的贴板面，所述补强板与所述贴板面贴合并与所述槽侧面存在间隙；
    和/或，所述磁性贴与所述补强板之间存在距离。
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