WO2022121012A1 - Procédé de traitement de tranche de niobate de lithium de haute précision ultra-mince de grande taille - Google Patents

Procédé de traitement de tranche de niobate de lithium de haute précision ultra-mince de grande taille Download PDF

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Publication number
WO2022121012A1
WO2022121012A1 PCT/CN2020/140167 CN2020140167W WO2022121012A1 WO 2022121012 A1 WO2022121012 A1 WO 2022121012A1 CN 2020140167 W CN2020140167 W CN 2020140167W WO 2022121012 A1 WO2022121012 A1 WO 2022121012A1
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grinding
pressurization
lithium niobate
polishing
wafer
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PCT/CN2020/140167
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English (en)
Chinese (zh)
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沈浩
张艺
徐秋峰
汪万盾
丁孙杰
宋岩岩
朱海瀛
曹焕
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天通控股股份有限公司
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Publication of WO2022121012A1 publication Critical patent/WO2022121012A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies

Definitions

  • the invention relates to the technical field of semiconductor material processing, in particular to a processing method of a lithium niobate crystal substrate.
  • Lithium niobate (LiNbO 3 ) is a compound of niobium, lithium and oxygen, and is a negative crystal (n0>ne).
  • Lithium niobate is a ferroelectric crystal with a Curie point of 1140°C, a spontaneous polarization of 50 ⁇ 10C/cm', and a thermal conductivity of 0.056 (W/cm ⁇ K).
  • the distorted lithium niobate crystal has piezoelectric, ferroelectric, optoelectronic, nonlinear optics, pyroelectric and other multi-performance materials, and also has photorefractive effect. Its single crystals are important materials for optical waveguides, mobile phones, piezoelectric sensors, optical modulators and various other linear and nonlinear optical applications.
  • Lithium niobate crystal is one of the most widely used new inorganic materials. It is a good piezoelectric transducer material, ferroelectric material and electro-optical material. As an electro-optical material, lithium niobate plays an optical modulation role in optical communication.
  • High-performance electronic components have extremely high requirements on the surface lattice integrity of lithium niobate wafers, not only high flatness, but also damage-free, ultra-smooth and no crystal orientation deviation.
  • Ordinary wafers have the phenomenon of electrostatic accumulation on the surface. This problem can be solved by the blackening process.
  • the blackening process can also make the wafers have the effect of low pyroelectricity, which is more in line with the laws and needs of the development of the semiconductor industry.
  • lithium niobate wafers At present, with the rapid development of the semiconductor industry, the demand for lithium niobate wafers is gradually increasing. In order to increase the output and reduce the cost, the wafer needs to develop in the direction of large size. On the one hand, it can improve the general process platform for large-size lithium niobate wafers, and on the other hand, it can get rid of the constraints of the manufacturer's semiconductor machine equipment on the product. Since 8-inch lithium niobate wafers are larger than conventional wafers, greater processing stress will be generated during processing, which may easily lead to defects such as edge bursts, fragments, and cracks. And the larger the wafer size, the more difficult it is for TTV, WARP, BOW, PLTV and other indicators to reach the same level as the conventional size during processing.
  • Chinese patent application CN111230598A discloses a preparation method of an 8-inch lithium niobate wafer.
  • the three-time etching method solves the problem of severe internal stress and deformation of the lithium niobate wafer and the resulting wafer is easily broken during the production process;
  • Porous ceramic disc adsorption solves the problem that TTV is not easy to control caused by the traditional wax sticking process; however, the acid used for corrosion in actual operation poses a safety hazard to the environment and human body, and the use of porous ceramic disc adsorption to equipment and accessories High precision is required, and only one-side polishing can be achieved.
  • the applicant disclosed in CN107665813A a method for processing a lithium tantalate crystal substrate, which includes the steps of slicing, chamfering, blackening, grinding, rough polishing and fine polishing, and diamond polishing is used in the rough polishing and fine polishing steps.
  • the diamond polishing liquid is composed of diamond micropowder, ethylene glycol, glycerin, ethanol ammonia and deionized water, and its pH value is between 9 and 11, wherein the content of diamond micropowder is 20% to 25%, and the content of ethylene glycol is 20% to 25%.
  • the glycerin content is 3% to 5%
  • the ethanol ammonia content is 0.1% to 0.3%
  • the deionized water content is 60% to 65%.
  • the invention can greatly improve the surface smoothness of the lithium tantalate wafer, reduce the surface roughness, eliminate stress, and achieve mirror polishing effect, thereby reducing production cost and improving product qualification rate.
  • the physical properties of lithium tantalate and lithium niobate are very different, and the processing method of lithium tantalate is not suitable for lithium niobate.
  • the purpose of the present invention is to provide a large-size, ultra-thin and high-precision lithium niobate wafer processing method, which can mass-produce 8-inch lithium niobate wafers, can realize double-sided processing, greatly improve production efficiency, is safe and reliable, and can ensure the quality of the wafers at the same time. Performance and quality, to achieve the purpose of saving production costs, improving product qualification rate, reducing the stress problem of large-sized wafers, and getting rid of semiconductor manufacturers' equipment constraints on products.
  • the present invention provides the following technical solutions:
  • a large-size, ultra-thin, high-precision lithium niobate wafer processing method comprising the steps of slicing, chamfering, grinding 800, blackening, grinding 2000, and polishing;
  • Both the grinding 800 steps and the grinding 2000 steps use a double-sided grinder, and at 22°C ⁇ 2°C, the grinding and pressing method adopts a segmented slow pressing method;
  • the segmented and slow pressurization mode of grinding 800 is: the first segment is 1min, no pressurization; the second segment is pressurized for 3min, and the pressurization rate is 2g/cm 2 per minute; the third segment is pressurized for 2min, and the pressurization rate is 3g/cm 2 per minute, the fourth stage is pressurized for 2 minutes, the pressurizing rate is 4g/cm 2 per minute, and the total pressure is 20g/cm 2 ;
  • the segmental slow pressurization mode of grinding 2000 is: the first segment is 1min, no pressurization; the second segment is pressurized for 3min, and the pressurization rate is 4g/cm 2 per minute; the third segment is pressurized for 2min, and the pressurization rate is per minute 6g/cm 2 ; the fourth stage is pressurized for 2 minutes, the pressurizing rate is 8g/cm 2 per minute, and the total pressure is 40g/cm 2 ; the mortar flow is 5L/cm 2 -15L/cm 2 , and the maximum speed of the equipment is 6rpm -10rpm;
  • the polishing step a double-sided polishing machine is used. At 22°C ⁇ 2°C, the maximum rotating speed of the equipment is 6rpm-10rpm, and the polishing liquid adopts the Compol 403 polishing liquid of FUJIMI.
  • the main component is SiO 2 , and the specific gravity is 1.06-1.20.
  • the pressurization method adopts the stepwise slow pressurization method.
  • the pressurization method is: the first stage is 1min, no pressurization; the second stage is pressurized for 4min, and the pressurization rate is 10g/cm 2 per minute; the third stage is pressurized for 4min, and the pressure is The pressure rate is 15g/cm 2 per minute; the fourth stage is pressurized for 5 minutes, the pressure rate is 20g/cm 2 per minute, and the total pressure is 200g/cm 2 ;
  • the polishing fluid flow is 10L/cm 2 -12L/cm 2 .
  • the step-by-step slow pressurization method means that before the grinding disc is pressed against each other, the lower disc is started first, so that the mortar is evenly distributed, and it can be checked whether the wafer and the fixture are fixed well, and then pressurized after running for a period of time. way of pressurization.
  • Figure 2-4 is a comparison chart of the relationship between the direct pressure method and the segmented pressure method in grinding 800, grinding 2000, and polishing process pressure and time. It can be seen from the figure:
  • the direct pressure mode of grinding 800 is pressurized for 5 minutes at a pressure rate of 4g/cm 2 per minute to 20g/cm 2 ; the direct pressure method of grinding 2000 is pressurized at a pressure rate of 8g/cm 2 per minute for 5min Pressurize to 40 g/cm 2 ; pressurize to 200 g/cm 2 for 10 min at a pressing rate of 20 g/cm 2 per minute in the direct pressing mode of the polishing step.
  • the direct pressure method is too rigid and mechanized, which is easy to cause problems such as scratches and splinter, and is not conducive to the discovery and remediation of the problem.
  • the segmented pressure method allows time for observation and adjustment, and the pressure speed is slow. And mild, it can effectively ensure the processing quality and reduce the possibility of scratches and splits.
  • the main component of the polishing liquid is SiO 2 , and the specific gravity is 1.06-1.20.
  • the grinding effect of the 800 grinding steps reaches TTV ⁇ 5 ⁇ m, Bow ⁇ 30 ⁇ m, and the grinding effect of the 2000 grinding steps reaches TTV ⁇ 4 ⁇ m, Bow ⁇ 25 ⁇ m.
  • the polishing effect of the polishing step requires wafer TTV ⁇ 3 ⁇ m, Bow ⁇ 20 ⁇ m, WARP ⁇ 40 ⁇ m, PLTV>95%, mirror effect, no stress.
  • the lithium niobate wafer is an 8-inch lithium niobate wafer.
  • the jig used in the grinding 800, grinding 2000 and polishing steps is a freewheel, and the wafer placement position in the freewheel adopts an eccentric design;
  • the wafer placement position is circular, and its edge is provided with a rubber ring with a diameter of 200.2 mm and a width of 5 mm;
  • the center of the 20mm drainage hole is the center of the star wheel, and the radius of the 60mm drainage hole is the reference edge, which is deflected to the left and right by 110°.
  • the appearance of the cruise star wheel is shown in Figure 1 .
  • the slicing step is specifically: at a wire speed of 400m/min-1000m/min, at 22°C ⁇ 2°C, using wire cutting equipment to cut the lithium niobate crystal rod into wafers with a thickness of 250 ⁇ m-300 ⁇ m, the wafers TTV ⁇ 10 ⁇ m;
  • the chamfering step is specifically as follows: using a T-shaped grinding wheel for chamfering, and at a grinding wheel speed of 600rpm/min-1000rpm/min, at 22°C ⁇ 2°C, the right angle of the lithium niobate wafer is inverted into a circle of about R0.1 Angle, can effectively reduce the probability of edge burst, fragments, splinter.
  • the blackening step is specifically as follows: placing the wafer in a blackening furnace for blackening treatment, the temperature is 300°C-380°C, the protective gas flow is 3L-11L, and the reduction time is 4 hours-24 hours, which can effectively Decreases the chance of warping and splintering.
  • a lithium niobate wafer prepared by the above-mentioned large-size, ultra-thin and high-precision lithium niobate wafer processing method is described in detail below.
  • the large-size, ultra-thin, high-precision lithium niobate wafer processing method and the fixture of the invention have excellent processing effects on 8-inch lithium niobate wafers, and greatly improve the production efficiency.
  • the grinding and polishing pressurization method adopts a new segmental pressurization method, and the pressurization method adopts a slow and gradual pressurization method, which greatly reduces the scratches, fragments, cracks, etc. Effectively reduce edge slump, edge burst, insufficient grinding, etc., greatly improve the yield of production, and get rid of the constraints of semiconductor manufacturers' equipment on products.
  • Fig. 1 is the schematic diagram of the fixture adopted in the present invention.
  • Fig. 2 is the pressure mode contrast graph of direct pressurization and segmental pressurization in grinding 800 steps;
  • Fig. 3 is the pressure mode contrast graph of direct pressurization and segmental pressurization in grinding 2000 steps;
  • Fig. 4 is the pressure mode contrast graph of direct pressurization and segmental pressurization in the polishing step
  • Fig. 5 is the test result of the fixture of the present invention and the segmented pressurization mode
  • Figure 6 shows the test results of the traditional star wheel and the segmented pressurization method
  • Fig. 7 is the test result of the fixture of the present invention and direct pressurization mode
  • Figure 8 shows the test results of the traditional star wheel and the direct pressurization method.
  • Embodiment 1 adopts the clamp (star wheel) of the present invention and segmented pressurization
  • the clamp used in this embodiment is a freewheel 1, and the wafer placement position 2 in the freewheel 1 adopts an eccentric design; the entire wafer can be processed to the maximum extent, and the processing accuracy can be ensured at the same time. .
  • the wafer placement position 2 is circular, and its edge is provided with a rubber ring 4 with a diameter of 105mm and a thickness of 5mm; it can effectively protect the wafer, greatly reduce edge burst, slump, splinter, debris, collapse and other phenomena, greatly improving Yield and stability.
  • the wafer placement circle and drainage are all inscribed with the circle, the wafer placement circle and the center of the 60mm drainage hole are on the same diameter line and on both sides, the center of the 40mm drainage hole is the center of the star wheel as the center of the circle, and the radius of the 60mm drainage hole is the reference edge. Deflect 60° to the left and right, respectively, the center of the 20mm drainage hole is the center of the star wheel, and the radius of the 60mm drainage hole is the reference edge, which is deflected to the left and right by 110°.
  • a large-size, ultra-thin, high-precision lithium niobate wafer processing method comprising the following steps:
  • the grinding pressure method adopts Staged and slow pressurization mode, the pressurization mode is the first stage of 1min, no pressurization, the second stage of pressurization for 3min, the pressurization rate is 2g/cm 2 per minute, the third stage of pressurization is 2min, the pressurization rate is 3g/min cm 2 , the fourth stage is pressurized for 2 minutes, the pressurization rate is 4g/cm 2 per minute, the total pressurization is 20g/cm 2 , the mortar flow is 10L/cm 2 , and the maximum speed of the equipment is 8rpm; the grinding fixture adopts a planetary wheel , the grinding effect reaches TTV ⁇ 5 ⁇ m, Bow ⁇ 30 ⁇ m;
  • Blackening place the wafer in a blackening furnace for blackening treatment, the temperature is 340°C, the flow rate of the protective gas is 7L, and the reduction time is 16 hours;
  • the grinding pressure method adopts Staged and slow pressurization mode, the pressurization mode is the first stage pressurization for 3min, the pressurization rate is 4g/cm 2 per minute, the second stage pressurization is 2min, the pressurization rate is 6g/cm 2 per minute, the third stage pressurization 2min, the pressure rate is 8g/cm 2 per minute, the total pressure is 40g/cm 2 , the mortar flow rate is 11L/cm 2 , the maximum speed of the equipment is 8rpm, and the grinding jig adopts a star wheel (the same as the one in the grinding step of 800). Star wheel), the grinding effect reaches TTV ⁇ 4 ⁇ m, Bow ⁇ 25 ⁇ m;
  • Polishing use a double-sided polishing machine for polishing, the temperature is 22 ° C, the maximum speed of the equipment is 9 rpm, the polishing liquid is FUJIMI's Compol 403 polishing liquid, the main component is SiO 2 , the specific gravity is 1.12, and the polishing pressure method is segmented.
  • Slow pressurization mode, pressurizing mode is the first stage of pressurization for 4min, the pressurization rate is 10g/cm 2 per minute, the second stage is pressurized for 4min, the pressurization rate is 15g/cm 2 per minute, the third stage is pressurized for 5min, The pressurization rate was 20 g/cm 2 per minute to a total of 200 g/cm 2 .
  • the flow rate of the polishing liquid is 11L/cm 2
  • the polishing fixture adopts the star wheel (the same as the star wheel in the grinding step of 800), and the polishing effect is the wafer TTV ⁇ 3 ⁇ m, Bow ⁇ 20 ⁇ m, WARP ⁇ 40 ⁇ m, PLTV>95%, mirror effect , No stress.
  • Comparative example 1 uses traditional star wheel and segmented pressurization
  • a large-size, ultra-thin, high-precision lithium niobate wafer processing method comprising the following steps:
  • the grinding pressure method adopts Staged and slow pressurization mode, the pressurization mode is the first stage of 1min, no pressurization, the second stage of pressurization for 3min, the pressurization rate is 2g/cm 2 per minute, the third stage of pressurization is 2min, the pressurization rate is 3g/min cm 2 , the fourth stage is pressurized for 2 minutes, the pressurization rate is 4g/cm 2 per minute, the total pressurization is 20g/cm 2 , the mortar flow is 10L/cm 2 , the maximum speed of the equipment is 8rpm, and the grinding fixture adopts the traditional rotary star Wheel, the grinding effect reaches TTV ⁇ 9 ⁇ m, Bow ⁇ 35 ⁇ m;
  • Blackening place the wafer in a blackening furnace for blackening treatment, the temperature is 340°C, the flow rate of the protective gas is 7L, and the reduction time is 16 hours;
  • the grinding pressure method adopts Staged and slow pressurization mode, the pressurization mode is the first stage for 1min, no pressurization, the second stage is pressurized for 3min, the pressurization rate is 4g/cm 2 per minute, the third stage is pressurized for 2min, and the pressurization rate is 6g per minute /cm 2 , the fourth stage is pressurized for 2 minutes, the pressurization rate is 8g/cm 2 per minute, the total pressurization is 40g/cm 2 , the mortar flow is 11L/cm 2 , the maximum speed of the equipment is 8rpm, and the grinding fixture adopts traditional swimming Star wheel, the grinding effect reaches TTV ⁇ 8 ⁇ m, Bow ⁇ 30 ⁇ m;
  • Polishing use a double-sided polishing machine for polishing, the temperature is 22 ° C, the maximum speed of the equipment is 9 rpm, the polishing liquid is FUJIMI's Compol 403 polishing liquid, the main component is SiO 2 , the specific gravity is 1.12, and the polishing pressure method is segmented.
  • Slow pressurization mode the pressurization mode is the first stage for 1min, no pressurization, the second stage is pressurized for 4min, the pressurization rate is 10g/cm 2 per minute, the third stage is pressurized for 4min, and the pressurization rate is 15g/cm per minute 2.
  • the fourth stage is pressurized for 5 minutes, the pressurization rate is 20g/cm 2 per minute, the total pressure is 200g/cm 2 , the flow rate of the polishing liquid is 11L/cm 2 , the polishing fixture adopts a traditional star wheel, and the polishing effect is wafer TTV ⁇ 6 ⁇ m, Bow ⁇ 20 ⁇ m, WARP ⁇ 40 ⁇ m, PLTV>95%, thickness 250 ⁇ 15 ⁇ m, mirror effect, no stress.
  • the conventional freewheel lacks the rubber ring at the edge of the wafer placement position.
  • Comparative example 2 adopts the fixture (plane wheel) of the present invention and direct pressurization
  • a large-size, ultra-thin, high-precision lithium niobate wafer processing method comprising the following steps:
  • Blackening place the wafer in a blackening furnace for blackening treatment, the temperature is 340°C, the flow rate of the protective gas is 7L, and the reduction time is 16 hours;
  • Polishing use a double-sided polishing machine for polishing, the temperature is 22 ° C, the maximum speed of the equipment is 9 rpm, the polishing liquid is FUJIMI's Compol 403 polishing liquid, the main component is SiO 2 , the specific gravity is 1.12, and the polishing pressure method is segmented.
  • pressurization mode is direct pressurization mode, pressurize to 200g/ cm2 for 10min at a pressurization rate of 20g/ cm2 per minute, the flow rate of polishing liquid is 11L/ cm2 , and the polishing fixture adopts Example 1
  • the polishing effect is wafer TTV ⁇ 6 ⁇ m, Bow ⁇ 20 ⁇ m, WARP ⁇ 40 ⁇ m, PLTV>95%, thickness 250 ⁇ m ⁇ 15 ⁇ m, mirror effect, no stress.
  • Comparative example 3 uses a traditional star wheel and direct pressurization
  • a large-size, ultra-thin, high-precision lithium niobate wafer processing method comprising the following steps:
  • Blackening place the wafer in a blackening furnace for blackening treatment, the temperature is 340°C, the flow rate of the protective gas is 7L, and the reduction time is 16 hours;
  • Polishing use a double-sided polishing machine for polishing, the temperature is 22 ° C, the maximum speed of the equipment is 9 rpm, the polishing liquid is FUJIMI's Compol 403 polishing liquid, the main component is SiO 2 , the specific gravity is 1.12, and the polishing pressure method is segmented.
  • pressurizing method is direct pressurizing method, pressurize to 200g/ cm2 for 10 minutes at a pressurizing rate of 20g/ cm2 per minute, the flow rate of polishing liquid is 11L/ cm2 , and the polishing fixture adopts traditional oscillating star Wheel, the polishing effect is wafer TTV ⁇ 10 ⁇ m, Bow ⁇ 20 ⁇ m, WARP ⁇ 40 ⁇ m, PLTV>95%, thickness 250 ⁇ m ⁇ 15 ⁇ m, mirror effect, no stress.
  • Example 1 The data of Example 1 and Comparative Examples 1-3 are summarized, as shown in Table 1.
  • test group TTV thickness WARP BOW Embodiment 1 star wheel of the present invention + segmented pressurization 1.247 ⁇ m 242.033 ⁇ m 8.612 ⁇ m 7.268 ⁇ m
  • Comparative example 1 traditional cruise ship + segmented pressurization 5.015 ⁇ m 237.400 ⁇ m 16.424 ⁇ m 13.663 ⁇ m
  • Comparative example 2 the present invention's star wheel + direct pressurization 5.524 ⁇ m 238.531 ⁇ m 14.745 ⁇ m 12.249 ⁇ m
  • Comparative example 3 traditional cruise ship + direct pressurization 9.665 ⁇ m 241.362 ⁇ m 19.242 ⁇ m 13.426 ⁇ m
  • the use of the star wheel and segmented slow pressure method of the present invention can ensure the effect of grinding and polishing by adjusting parameters within a controllable range, TTV ⁇ 3 ⁇ m, BOW ⁇ 10 ⁇ m.
  • TTV a controllable range
  • BOW a controllable range
  • Example 1 can effectively reduce the defect rate in terms of TTV, grinding sufficiency, sag, and edge burst, and improve the production yield.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention se rapporte au domaine technique du traitement de matériaux semi-conducteurs, et en particulier à un procédé de traitement d'une tranche de niobate de lithium ultra-mince de grande taille. Le procédé comprend les étapes de tranchage, de chanfreinage, de meulage (800), de noircissement, de meulage (2000) et de polissage ; une meuleuse double face est utilisée dans les étapes de meulage (800) et de meulage (2000), et un mode de mise sous pression de meulage utilise un mode de mise sous pression segmentée lente à 22 ± 2 °C ; une polisseuse double face est utilisée dans l'étape de polissage, la vitesse de rotation maximale d'un dispositif est de 6 à10 tours/minute à 22 ± 2 °C, une solution de polissage de SiO22 est utilisée, la gravité spécifique est de 1,06-1,20 et un mode de mise sous pression de polissage utilise un mode de mise sous pression segmenté lent. Comme un mode de mise sous pression lente et progressive est utilisé pendant la mise sous pression, les conditions telles que la rayure, la fragmentation et la fissuration sont fortement réduites, et de plus, les conditions telles que l'effondrement de bord, l'explosion de bord et le meulage insuffisant peuvent être efficacement réduites conjointement avec un dispositif de fixation de la présente invention, ce qui permet d'augmenter considérablement le rendement de production et de s'affranchir de la restriction de dispositifs de machine à semi-conducteurs du fabricant sur des produits.
PCT/CN2020/140167 2020-12-08 2020-12-28 Procédé de traitement de tranche de niobate de lithium de haute précision ultra-mince de grande taille WO2022121012A1 (fr)

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CN110744364A (zh) * 2019-11-06 2020-02-04 天通控股股份有限公司 一种大尺寸超薄铌酸锂基片的双面抛光方法

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