WO2022057548A1 - Battery protection circuit - Google Patents

Battery protection circuit Download PDF

Info

Publication number
WO2022057548A1
WO2022057548A1 PCT/CN2021/112960 CN2021112960W WO2022057548A1 WO 2022057548 A1 WO2022057548 A1 WO 2022057548A1 CN 2021112960 W CN2021112960 W CN 2021112960W WO 2022057548 A1 WO2022057548 A1 WO 2022057548A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
substrate
signal
gate
switch tube
Prior art date
Application number
PCT/CN2021/112960
Other languages
French (fr)
Chinese (zh)
Inventor
李�杰
白青刚
杨小华
Original Assignee
深圳市创芯微微电子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市创芯微微电子有限公司 filed Critical 深圳市创芯微微电子有限公司
Publication of WO2022057548A1 publication Critical patent/WO2022057548A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/18Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00302Overcharge protection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00306Overdischarge protection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0036Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using connection detecting circuits

Definitions

  • the present application relates to the field of electronic technology, and in particular, to a battery protection circuit.
  • the existing battery protection chip includes an over-discharge protection circuit and an over-charge protection circuit for detecting the battery voltage, a discharge over-current protection circuit, a charging over-current protection and a short-circuit protection circuit for detecting the loop current, and a charging and discharging switch tube.
  • the on-off switch tube control module realizes the protection of battery charging and discharging.
  • the switching tubes in the existing battery protection chips mainly use low-voltage MOS tubes, and the withstand voltage of the device is about 10V. The tube is damaged, so that the battery protection chip cannot work normally. Replacing the switch tube with a high-voltage tube will greatly increase the chip area and cost.
  • the present application provides a battery protection circuit to solve the problems that the existing battery protection circuit is easily broken down when using a low-voltage switch tube and damages the chip, and increases the chip area and cost when using a high-voltage switch tube
  • a battery protection circuit comprising:
  • Reference and bias circuit voltage protection circuit, current protection circuit, delay circuit, switch control circuit, switch and clamp circuit;
  • the first end of the voltage protection circuit is connected to the power supply voltage sampling point, and the second end is connected to the first end of the delay circuit;
  • the first end of the current protection circuit is connected to the loop current sampling point, and the second end is connected to the second end of the delay circuit;
  • the second end of the delay circuit is connected to the first end of the switch control circuit
  • the second end of the switch tube control circuit is connected to the gate of the switch tube
  • the source and drain of the switch tube are connected in series in the charging and discharging loop between the battery and the charging power source or the load;
  • the first end of the clamping circuit is connected to the power supply voltage sampling point, the second end is connected to the ground with the negative electrode of the battery, and the third end is connected to the loop current sampling point;
  • the loop current sampling point is located at the negative pole of the charging power supply or the load side;
  • the reference and bias circuits are connected to the power supply voltage sampling point
  • the reference and bias circuits are used to generate the bias voltage required by the voltage protection circuit and the bias current required by the current protection circuit;
  • the voltage protection circuit is used to detect the power supply voltage, and when the power supply voltage is abnormal generating a detection inversion signal;
  • the current protection circuit is used for detecting charging current and discharging current, and generating a detection inversion signal when the charging current and discharging current are abnormal;
  • the delay circuit is used for delaying the detection inversion signal processing;
  • the switch tube control circuit is used to generate a control signal according to the output signal of the delay circuit, and send the control signal to the switch tube to control the start or close of the switch tube;
  • the clamp circuit is used to The loop current sampling point is clamped when a negative high voltage occurs at the loop current sampling point.
  • the voltage drop between the second end and the third end of the clamp circuit is less than the source-drain breakdown voltage of the switch tube.
  • the clamping circuit includes an NMOS transistor and a diode string group, and the diode string group includes a plurality of diodes connected in series;
  • the drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the diode string group;
  • the cathode of the diode string is connected to the loop current sampling point.
  • the sum of the threshold voltage of the NMOS transistor and the turn-on voltages of the plurality of diodes is less than the source-drain breakdown voltage of the switching transistor.
  • the clamping circuit includes an NMOS transistor string group, and the NMOS transistor string group includes several NMOS transistors connected in series;
  • each NMOS transistor is connected to the common junction between the drain and the gate of the next NMOS transistor;
  • the drain of the first NMOS transistor is connected to the power supply voltage sampling point, and the gate is connected to the ground with the negative electrode of the battery;
  • the source of the last NMOS transistor is connected to the loop current sampling point.
  • the sum of the threshold voltages of the several NMOS transistors is less than the source-drain breakdown voltage of the switching transistors.
  • the clamping circuit includes an NMOS transistor and a PMOS transistor string group, and the PMOS transistor string group includes a plurality of PMOS transistors connected in series;
  • the drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS tube in the PMOS tube string group;
  • the common junction between the gate and drain of each PMOS transistor is connected to the source of the next PMOS transistor, and the common junction between the gate and drain of the last PMOS transistor is connected to The loop current sampling point is connected.
  • the sum of the threshold voltage of the NMOS transistor and the threshold voltages of the several PMOS transistors is less than the source-drain breakdown voltage of the switch transistor.
  • the switch tube control circuit includes a logic circuit, a substrate switching circuit, and a gate control circuit;
  • the input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
  • the second end of the substrate switching circuit is connected to the substrate of the switch tube;
  • the output end of the gate control circuit is connected to the gate of the switch tube
  • the logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit.
  • a signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal
  • the gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  • the switch tube is an isolated MOSFET.
  • the switch tube is a non-isolated MOSFET.
  • a clamp circuit is added to the existing battery protection circuit.
  • the first end of the clamp circuit is connected to the power supply voltage sampling point, and the second end is connected to the ground with the negative electrode of the battery.
  • the third end is connected to the loop current sampling point, and the loop current sampling point is located at the negative pole of the charging power supply or the load side.
  • FIG. 1 is a schematic diagram of a battery protection circuit provided by an embodiment of the present application
  • FIG. 2 is a schematic diagram of a switch tube in a battery protection circuit provided by an embodiment of the present application
  • FIG. 3 is a schematic diagram of a clamp circuit in a battery protection circuit provided by an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a clamp circuit in a battery protection circuit provided by another embodiment of the present application.
  • FIG. 5 is a schematic diagram of a clamp circuit in a battery protection circuit provided by another embodiment of the present application.
  • FIG. 6 is an application schematic diagram of a battery protection circuit provided by another embodiment of the present application.
  • a clamp circuit is added to the existing battery protection circuit.
  • the first end of the clamp circuit is connected to the power supply voltage sampling point, and the second end is connected to the ground with the negative electrode of the battery.
  • the third end is connected to the loop current sampling point, and the loop current sampling point is located at the negative pole of the charging power supply or the load side.
  • FIG. 1 is a schematic diagram of a battery protection circuit provided by an embodiment of the present application.
  • the battery protection circuit 1 includes a reference and bias circuit 10 , a voltage protection circuit 20 , a current protection circuit 30 , a delay circuit 40 , a switch control circuit 50 , a switch 60 and a clamp circuit 70 ;
  • the first end of the voltage protection circuit 20 is connected to the power supply voltage sampling point VDD, and the second end is connected to the first end of the delay circuit 40;
  • the first end of the current protection circuit 30 is connected to the loop current sampling point VM, and the second end is connected to the second end of the delay circuit 40;
  • the second end of the delay circuit 40 is connected to the first end of the switch control circuit 50;
  • the second end of the switch tube control circuit 50 is connected to the gate of the switch tube 60;
  • the source and drain of the switch tube 60 are connected in series in the charging and discharging loop between the battery and the charging power source or load;
  • the first end of the clamping circuit 70 is connected to the power supply voltage sampling point VDD, the second end and the negative electrode of the battery are connected to the ground VSS, and the third end is connected to the loop current sampling point VM;
  • the loop current sampling point VM is located at the negative pole of the charging power supply or the load side;
  • the reference and bias circuit 10 is connected to the power supply voltage sampling point VDD;
  • the reference and bias circuit 10 is used to generate the bias voltage required by the voltage protection circuit 20 and the bias current required by the current protection circuit 30; the voltage protection circuit 20 is used to detect the power supply voltage, and A detection inversion signal is generated when the voltage is abnormal; the current protection circuit 30 is used to detect the charging current and the discharging current, and generate a detection inversion signal when the charging current and the discharging current are abnormal; the delay circuit 40 is used for the The inversion signal is detected for delay processing; the switch control circuit 50 is used to generate a control signal according to the output signal of the delay circuit 40 , and send the control signal to the switch 60 to control the start of the switch 60 or off; the clamping circuit 70 is configured to perform clamping processing on the loop current sampling point VM when a negative high voltage occurs at the loop current sampling point VM.
  • the reference and bias circuit 10 is connected to the power supply voltage sampling point VDD.
  • the power supply voltage sampling point VDD is the voltage sampling point of the positive pole of the power supply of the battery protection chip.
  • the power supply voltage sampling point VDD is the voltage sampling point after the positive electrode of the battery passes through a preset resistance, such as VDD as shown in FIG. 1 .
  • the loop current sampling point VM is the current sampling point of the charging and discharging loop between the battery and the charging power source or the load. As shown in FIG. 1, VM is set at the negative electrode of the charging power source or the load side.
  • the reference and bias circuit 10 obtains a voltage sample value of the chip power supply from the power supply voltage sample point VDD, and then generates a bias voltage and a bias current according to the voltage sample value.
  • the bias voltage is the detection threshold of the voltage protection circuit 20
  • the bias current is the detection threshold of the current protection circuit 30 .
  • the voltage protection circuit 20 When the voltage protection circuit 20 is enabled, the power supply voltage is detected, and the power supply voltage is compared with the bias voltage to determine whether the battery is abnormally over-discharged or over-charged. When the power supply voltage is abnormal A detection toggle signal is generated. When the current protection circuit 30 is enabled, the charging current and the discharging current are detected, and the charging current and the discharging current are respectively compared with the corresponding bias current to judge whether the circuit is abnormally over-discharged, over-charged or short-circuited. And a detection inversion signal is generated when the charging current and the discharging current are abnormal.
  • the delay circuit 40 performs delay processing on the detection inversion signal sent by the voltage protection circuit 20 or the current protection circuit 30 , and outputs the delayed detection inversion signal to the switch control circuit 50 .
  • the switch control circuit 50 performs logic processing on the output signal of the delay circuit 40 to generate a control signal for the switch 60 .
  • the control signal is a switch signal of the switch tube 60 to control the start or stop of the switch tube 60 .
  • the switch tube 60 is connected in series in the charging and discharging circuit between the battery and the charging power source or the load, and by controlling the start or shutdown of the switch tube 60, the voltage overcharge or overdischarge, loop overdischarge or overcharge or short circuit can be realized. Protect.
  • the clamping circuit 70 receives power from the power supply voltage sampling point VDD, detects the voltage information of the loop current sampling point VM, and clamps the loop current sampling point VM when a negative high voltage occurs at the loop current sampling point VM. bit processing.
  • the voltage drop between the second terminal and the third terminal is smaller than the source-drain breakdown voltage of the switch tube 60 . Since the second terminal of the clamping circuit 70 and the negative electrode of the battery are connected to the ground VSS, the absolute value of the voltage of the third terminal in the clamping circuit 70 is the voltage of the loop current sampling point VM. The absolute value is smaller than the breakdown voltage between the source electrode and the drain electrode of the switch tube 60, thereby preventing the source electrode and the drain electrode of the switch tube 60 from being broken down.
  • a 5V low-voltage switch tube is used as an example for description below.
  • the breakdown voltage VDS between the source and drain of the switch tube 60 is about 10V, and the battery voltage is 4V.
  • the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery, and the clamping circuit 70 does not work at this time.
  • a high-voltage charger such as a 20V charger
  • the battery voltage is 4V
  • the voltage on the loop current sampling point VM is -16V high voltage.
  • the three poles of the switch tube 60 The potential is shown in Figure 2, where VSS represents the drain, VM represents the source, and SW represents the gate.
  • the voltage difference between the drain and the source of the switch tube 60 is 16V, which is greater than the breakdown voltage VDS between the source and drain electrodes, and the switch tube 60 will be broken down and burned without the clamping circuit 70 , the battery protection chip fails.
  • the negative voltage of the loop current sampling point VM is clamped, so that the absolute value of the negative voltage of the loop current sampling point VM is less than
  • the breakdown voltage between the source and drain of the switch tube 60 is clamped to -4V, for example, and the voltage difference between the drain and the source of the switch tube 60 is 4V, which is much smaller than the difference between the source and the drain.
  • the switch 60 will not be damaged due to breakdown, and the battery protection chip can still work normally.
  • the clamp circuit 70 is used to clamp the loop current sampling point VM when a negative high voltage occurs at the loop current sampling point VM.
  • the high withstand voltage ensures the high withstand voltage and reliability of the chip while reducing the area and cost of the battery protection chip.
  • the clamping circuit 70 when the clamping circuit 70 is working, the voltage drop between the second terminal and the third terminal is less than the source-drain breakdown voltage VDS of the switching tube.
  • the clamping circuit 70 includes an NMOS transistor M1 and a diode string group, and the diode string group includes a plurality of diodes connected in series;
  • the drain of the NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the diode string;
  • the cathode of the diode string is connected to the loop current sampling point.
  • the voltage drop between the gate of the NMOS transistor M1 and the negative electrode of the diode string is less than the source-drain breakdown voltage VDS of the switching transistor.
  • the number of diodes in the diode string can be set according to the actual value of the source-drain breakdown voltage VDS of the switch, as long as the threshold voltage of the NMOS transistor and the turn-on voltage of the diodes are satisfied. and less than the source-drain breakdown voltage of the switch.
  • the breakdown voltage VDS between the source and drain of the switch is about 10V, and the battery voltage is 4V.
  • the diode string group includes three diodes connected in series, they are denoted as a first diode D1 , a second diode D2 , and a third diode D3 .
  • the drain of the NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the first diode D1; the first The cathode of the diode D1 is connected to the anode of the second diode D2, the cathode of the second diode D2 is connected to the anode of the third diode D3, and the third diode D3
  • the negative pole of is connected to the loop current sampling point VM.
  • the turn-on voltages of the NMOS transistor M1, the first diode D1, the second diode D2, and the third diode D3 are all 1V, 4V in total.
  • the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery.
  • VSS-4V -4V
  • VM ⁇ VSS-4V the NMOS in the clamping circuit 70
  • the tube M1 and the diode string are turned on, and after the turn-on, the voltage of the loop current sampling point VM is forcibly pulled up to -4V, so that the voltage difference between the drain and the source of the switch tube is 4V, It is much smaller than the breakdown voltage VDS between the source and drain, which avoids the damage of the switch tube 60 .
  • VDS breakdown voltage
  • the clamping circuit 70 includes an NMOS transistor string group, and the NMOS transistor string group includes a plurality of NMOS transistors connected in series;
  • each NMOS transistor is connected to the common junction between the drain and the gate of the next NMOS transistor;
  • the drain of the first NMOS transistor is connected to the sampling point of the power supply voltage, and the gate is connected to the ground with the negative electrode of the battery.
  • the source of the last NMOS transistor is connected to the loop current sampling point.
  • the voltage drop between the gate of the first NMOS transistor and the source of the last NMOS transistor is less than the source-drain breakdown voltage VDS of the switching transistor.
  • the number of NMOS transistors in the NMOS transistor string group can be set according to the actual value of the source-drain breakdown voltage VDS of the switching transistors, as long as the sum of the threshold voltages of the NMOS transistors is less than the source of the switching transistors. leakage breakdown voltage.
  • the NMOS transistor string group includes four NMOS transistors connected in series, they are denoted as a first NMOS transistor M1 , a second NMOS transistor M2 , a third NMOS transistor M3 , and a fourth NMOS transistor M4 .
  • the drain of the first NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the drain and the gate of the second NMOS transistor M2.
  • the source of the second NMOS transistor M2 is connected to the common contact between the drain and the gate of the third NMOS transistor M3; the source of the third NMOS transistor M3 is connected to the The common contact between the drain and the gate of the fourth NMOS transistor M4 is connected; the source of the fourth NMOS transistor M4 is connected to the loop current sampling point VM.
  • the threshold voltages of the first NMOS transistor M1, the second NMOS transistor M2, the third NMOS transistor M3, and the fourth NMOS transistor M4 are all 1V, 4V in total.
  • the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery, at this time VM>VSS-4V, the first NMOS transistor M1 and the second NMOS transistor in the clamping circuit 70
  • the NMOS transistor M2, the third NMOS transistor M3, and the fourth NMOS transistor M4 are all non-conductive.
  • An NMOS transistor M1, a second NMOS transistor M2, a third NMOS transistor M3, and a fourth NMOS transistor M4 are turned on, and after they are turned on, the voltage of the loop current sampling point VM is forcibly pulled up to -4V, so that the The voltage difference between the drain electrode and the source electrode of the switch tube is 4V, which is much smaller than the breakdown voltage VDS between the source and drain electrodes, which avoids the damage of the switch tube 60 .
  • the above-mentioned number of NMOS transistors is only a preferred example of the present application, and can be specifically set according to actual conditions.
  • the clamping circuit 70 includes an NMOS transistor and a PMOS transistor string group, and the PMOS transistor string group includes a plurality of PMOS transistors connected in series;
  • the drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS tube in the PMOS tube string group;
  • the common junction between the gate and drain of each PMOS transistor is connected to the source of the next PMOS transistor, and the common junction between the gate and drain of the last PMOS transistor is connected to The loop current sampling point is connected.
  • the voltage drop between the gate of the NMOS transistor and the common junction of the gate and drain of the last PMOS transistor is less than the source-drain breakdown voltage VDS of the switch.
  • the number of PMOS transistors in the PMOS transistor string group can be set according to the actual value of the source-drain breakdown voltage VDS of the switching transistors, as long as the threshold voltage of the NMOS transistors and the threshold value of the several PMOS transistors are satisfied. The sum of the voltages is less than the source-drain breakdown voltage of the switch tube.
  • the clamping circuit 70 includes an NMOS transistor M1 and a PMOS transistor string group. If the PMOS transistor string group includes three PMOS transistors connected in series, they are denoted as the first PMOS transistor M2 and the second PMOS transistor. The PMOS transistor M3 and the third PMOS transistor M4.
  • the drain of the NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS transistor M2; the first The common junction between the gate and the drain of the PMOS transistor M2 is connected to the source of the second PMOS transistor M3; the common junction between the gate and the drain of the second PMOS transistor M3 is connected to the third The source of the PMOS transistor M4 is connected; the common junction between the gate and the drain of the third PMOS transistor M4 is connected to the loop current sampling point.
  • the threshold voltages of the NMOS transistor M1, the first PMOS transistor M2, the second PMOS transistor M3, and the third PMOS transistor M4 are all 1V, 4V in total.
  • the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery, at this time VM>VSS-4V, the NMOS transistor M1 and the first PMOS transistor in the clamping circuit 70 M2, the second PMOS transistor M3, and the third PMOS transistor M4 are all non-conductive.
  • VSS-4V -4V
  • VM ⁇ VSS-4V the NMOS in the clamping circuit 70
  • the transistor M1, the first PMOS transistor M2, the second PMOS transistor M3, and the third PMOS transistor M4 are turned on, and after they are turned on, the voltage of the loop current sampling point VM is forcibly pulled up to -4V, thereby making the switching transistor
  • the voltage difference between the drain and the source is 4V, which is much smaller than the breakdown voltage VDS between the source and the drain, which avoids damage to the switch tube 60 .
  • the above-mentioned number of PMOS transistors is only a preferred example of the present application, and can be specifically set according to actual conditions.
  • the source and drain of the switch tube 60 are symmetrical.
  • the substrate switching signal and the control signal output by the switch tube control circuit 50 are used to instruct the switch tube 60 to be turned on or off.
  • FIG. 6 a schematic diagram of the application of the battery protection circuit provided in this embodiment is shown. After the battery passes through the preset resistor R4 and the preset capacitor C1, the power supply voltage VDD is provided to the battery protection circuit.
  • the switch control circuit 50 includes a logic circuit 51, a substrate switching circuit 52, and a gate control circuit 53;
  • the input end of the logic circuit 51 is connected to the second end of the delay circuit 40, the first output end is connected to the first end of the substrate switching circuit 52, and the second output end is connected to the gate control circuit The first end of 53 is connected;
  • the second end of the substrate switching circuit 52 is connected to the substrate of the switch tube;
  • the output end of the gate control circuit 53 is connected to the gate of the switch tube
  • the logic circuit 51 is used to perform logic processing on the output signal of the delay circuit 40, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit 52, and generate a control signal, and send the substrate switching signal to the substrate switching circuit 52.
  • the control signal is sent to the gate control circuit 53;
  • the substrate switching circuit 52 is used to switch the substrate polarity of the switch tube 60 according to the substrate switching signal;
  • the gate control circuit 53 uses The gate control signal is output to the switch tube 60 according to the control signal, so as to control the activation or shutdown of the gate of the switch tube 60 .
  • the logic circuit 51 after receiving the output signal of the delay circuit 40, the logic circuit 51 performs logic processing on the output signal, generates a substrate switching signal and sends it to the substrate switching circuit 52, and generates a control signal and sends it to the substrate switching circuit 52. sent to the gate control circuit 53 .
  • the substrate switching circuit 52 switches the substrate polarity of the switching transistor 60 according to the substrate switching signal, so as to select the switching transistor 60 as an N-type substrate or a P-type substrate.
  • the gate control circuit 53 controls the activation or deactivation of the gate of the switch tube 60 according to the control signal, so as to realize the protection of the charging and discharging of the battery.
  • the voltage protection circuit 20 includes a first resistor R1, a second resistor R2, a third resistor R3, an overdischarge protection circuit 21, and an overcharge protection circuit. twenty two;
  • the first end of the overdischarge protection circuit 21 is connected to the common contact between the first resistor R1 and the second resistor R2, and the second end is connected to the delay circuit 40;
  • the first end of the overcharge protection circuit 22 is connected to the common contact between the second resistor R2 and the third resistor R3, and the second end is connected to the delay circuit 40;
  • the other end of the first resistor R1 is connected to the power supply voltage sampling point; the other end of the third resistor R3 is connected to the ground with the negative electrode of the battery;
  • the over-discharge protection circuit 21 is used to obtain the power supply voltage from the power supply voltage sampling point, and when the power supply voltage is less than the first voltage threshold, send a detection inversion signal to the delay circuit 40;
  • the overcharge The protection circuit 22 is configured to obtain the power supply voltage from the power supply voltage sampling point, and send a detection inversion signal to the delay circuit 40 when the power supply voltage is greater than a second voltage threshold.
  • the first voltage threshold is a discharge protection voltage threshold, which is a criterion for judging whether the battery is over-discharged.
  • the second voltage threshold is a charging protection voltage threshold, which is a criterion for judging whether the battery is overcharged.
  • the overdischarge protection circuit 21 When the overdischarge protection circuit 21 is enabled, the power supply voltage is detected, and the power supply voltage is compared with the first voltage threshold to determine whether the battery is overdischarged, when the power supply voltage is less than the first voltage When the threshold value is reached, it is considered that the battery is over-discharged, and a detection inversion signal is generated and sent to the delay circuit 40 .
  • the overcharge protection circuit 22 When the overcharge protection circuit 22 is enabled, the power supply voltage is detected, and the power supply voltage is compared with the second voltage threshold to determine whether the battery is overcharged. When the power supply voltage is greater than the second voltage When the threshold value is reached, it is considered that the battery is over-discharged, and a detection inversion signal is generated and sent to the delay circuit 40 .
  • the current protection circuit 30 includes a discharge overcurrent protection circuit 31 , a short circuit protection circuit 32 , and a charge overcurrent protection circuit 33 ;
  • the first ends of the discharge overcurrent protection circuit 31, the short circuit protection circuit 32, and the charging overcurrent protection circuit 33 are respectively connected to the loop current sampling point;
  • the second ends of the discharge overcurrent protection circuit 31 , the short circuit protection circuit 32 and the charging overcurrent protection circuit 33 are respectively connected to the delay circuit 40 ;
  • the discharge overcurrent protection circuit 31 is used to obtain the discharge current from the loop current sampling point, and send a detection inversion signal to the delay circuit 40 when the discharge current is greater than the first current threshold;
  • the charging overcurrent The protection circuit 33 is used for obtaining the charging current from the loop current sampling point, and when the charging current is greater than the second current threshold, a detection inversion signal is sent to the delay circuit 40;
  • the loop current sampling point acquires the short-circuit voltage, and sends a detection inversion signal to the delay circuit 40 when the short-circuit voltage is greater than the short-circuit protection voltage threshold.
  • the first current threshold is the discharge protection current threshold, which is a criterion for judging whether the loop current is too large during the discharging process of the battery.
  • the second current threshold is the charging protection current threshold, which is a criterion for judging whether the loop current is too large during the battery charging process.
  • the short-circuit protection voltage threshold is a criterion for judging whether a short-circuit occurs during charging and discharging of the battery.
  • the loop current is detected.
  • the first current threshold value can be converted into the first protection voltage, and then the voltage value of the loop current sampling point VM can be obtained through the current detection resistor, and the voltage value can be compared with the first protection voltage.
  • the value is greater than the first protection voltage, it is considered that the loop current is greater than the first current threshold, and the loop current is too large during battery discharge, a detection inversion signal is generated and sent to the delay circuit 40 .
  • the loop current is detected.
  • the second current threshold value can be converted into the second protection voltage, and then the voltage value of the loop current sampling point VM can be obtained through the current detection resistor, and the voltage value can be compared with the second protection voltage.
  • the value is less than the second protection voltage, it is considered that the loop current is greater than the second current threshold, and the loop current is too large during battery charging, and a detection inversion signal is generated and sent to the delay circuit 40 .
  • the short-circuit protection circuit 32 When the short-circuit protection circuit 32 is enabled, it is detected whether the battery is short-circuited.
  • the short-circuit protection voltage threshold is preset, the voltage value of the loop current sampling point VM is obtained, and the voltage value is compared with the short-circuit protection voltage threshold. If the voltage value is smaller than the short-circuit protection voltage threshold, Then, it is considered that the battery is short-circuited, and a detection inversion signal is generated and sent to the delay circuit 40 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Electronic Switches (AREA)
  • Secondary Cells (AREA)

Abstract

Provided in the preset application is a battery protection circuit. A clamping circuit is added to an existing battery protection circuit. A first terminal of the clamping circuit is connected to a power supply voltage sampling point, a second terminal and a negative electrode of a battery are both connected to the ground, and a third terminal is connected to a loop current sampling point. The loop current sampling point is located at the negative electrode of a charging power supply or a load side. By means of the clamping circuit receiving electrical energy from the power supply voltage sampling point, a voltage value at the loop current sampling point is detected, and clamping processing is performed on the loop current sampling point when a negative high voltage occurs at the loop current sampling point, thus the problem of a low-voltage switch transistor being broken down by a negative high voltage, thereby damaging a chip is effectively solved. The high voltage resistance of a battery protection chip is achieved while using a low-voltage switch transistor, and the area and costs of a chip are reduced.

Description

一种电池保护电路A battery protection circuit
本申请要求于2020年9月21日提交中国专利局、申请号为202010995509.X,发明名称为“一种电池保护电路”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application with the application number 202010995509.X and the invention titled "A Battery Protection Circuit" filed with the China Patent Office on September 21, 2020, the entire contents of which are incorporated into this application by reference .
技术领域technical field
本申请涉及电子技术领域,尤其涉及一种电池保护电路。The present application relates to the field of electronic technology, and in particular, to a battery protection circuit.
背景技术Background technique
发明人发现现有的电池保护芯片内部包括检测电池电压的过放保护电路和过充保护电路,检测回路电流的放电过流保护电路、充电过流保护以及短路保护电路,以及控制充放电开关管通断的开关管控制模块,实现对电池充放电的保护。然而,现有电池保护芯片中的开关管主要采用低压MOS管,器件耐压大约为10V,当用户误插入比如20V的高压充电器或者回路电流采样点VM出现浪涌电压时,很容易使开关管损坏,导致所述电池保护芯片无法正常工作。而将开关管换成耐高压的管子,则会大大增加芯片面积和成本。The inventor found that the existing battery protection chip includes an over-discharge protection circuit and an over-charge protection circuit for detecting the battery voltage, a discharge over-current protection circuit, a charging over-current protection and a short-circuit protection circuit for detecting the loop current, and a charging and discharging switch tube. The on-off switch tube control module realizes the protection of battery charging and discharging. However, the switching tubes in the existing battery protection chips mainly use low-voltage MOS tubes, and the withstand voltage of the device is about 10V. The tube is damaged, so that the battery protection chip cannot work normally. Replacing the switch tube with a high-voltage tube will greatly increase the chip area and cost.
发明内容SUMMARY OF THE INVENTION
本申请提供一种电池保护电路,以解决现有电池保护电路使用低压开关管易时被击穿而损坏芯片、使用高压开关管时增加芯片面积和成本的问题The present application provides a battery protection circuit to solve the problems that the existing battery protection circuit is easily broken down when using a low-voltage switch tube and damages the chip, and increases the chip area and cost when using a high-voltage switch tube
本申请的是这样实现的,一种电池保护电路,包括:The present application is implemented in this way, a battery protection circuit, comprising:
基准和偏置电路、电压保护电路、电流保护电路、延时电路、开关管控制电路、开关管以及钳位电路;Reference and bias circuit, voltage protection circuit, current protection circuit, delay circuit, switch control circuit, switch and clamp circuit;
所述电压保护电路的第一端与电源电压采样点连接,第二端与所述延时电路的第一端连接;The first end of the voltage protection circuit is connected to the power supply voltage sampling point, and the second end is connected to the first end of the delay circuit;
所述电流保护电路的第一端与回路电流采样点连接,第二端与所述延时电路的第二端连接;The first end of the current protection circuit is connected to the loop current sampling point, and the second end is connected to the second end of the delay circuit;
所述延时电路的第二端与所述开关管控制电路的第一端连接;The second end of the delay circuit is connected to the first end of the switch control circuit;
所述开关管控制电路的第二端与所述开关管的栅极连接;The second end of the switch tube control circuit is connected to the gate of the switch tube;
所述开关管的源极和漏极串接在电池和充电电源或负载之间的充放电回路中;The source and drain of the switch tube are connected in series in the charging and discharging loop between the battery and the charging power source or the load;
所述钳位电路的第一端与所述电源电压采样点连接,第二端与电池的负极共接于地,第三端与所述回路电流采样点连接;The first end of the clamping circuit is connected to the power supply voltage sampling point, the second end is connected to the ground with the negative electrode of the battery, and the third end is connected to the loop current sampling point;
所述回路电流采样点位位于所述充电电源或负载侧的负极;The loop current sampling point is located at the negative pole of the charging power supply or the load side;
所述基准和偏置电路与所述电源电压采样点连接;the reference and bias circuits are connected to the power supply voltage sampling point;
所述基准和偏置电路用于产生电压保护电路所需的偏置电压和电流保护电路所需的偏置电流;所述电压保护电路用于检测电源电压,并在所述电源电压发生异常时产生检测翻转信号;所述电流保护电路用于检测充电电流、放电电流,并在充电电流、放电电流发生异常时产生检测翻转信号;所述延时电路用于对所述检测翻转信号进行延时处理;所述开关管控制电路用于根据延时电路的输出信号产生控制信号,并将所述控制信号发送至所述开关管,以控制开关管的启动或关闭;所述钳位电路用于在所述回路电流采样点出现负高压时对所述回路电流采样点进行钳位处理。The reference and bias circuits are used to generate the bias voltage required by the voltage protection circuit and the bias current required by the current protection circuit; the voltage protection circuit is used to detect the power supply voltage, and when the power supply voltage is abnormal generating a detection inversion signal; the current protection circuit is used for detecting charging current and discharging current, and generating a detection inversion signal when the charging current and discharging current are abnormal; the delay circuit is used for delaying the detection inversion signal processing; the switch tube control circuit is used to generate a control signal according to the output signal of the delay circuit, and send the control signal to the switch tube to control the start or close of the switch tube; the clamp circuit is used to The loop current sampling point is clamped when a negative high voltage occurs at the loop current sampling point.
可选地,所述钳位电路工作时,其第二端与第三端之间的压降小于所述开关管的源漏击穿电压。Optionally, when the clamp circuit operates, the voltage drop between the second end and the third end of the clamp circuit is less than the source-drain breakdown voltage of the switch tube.
可选地,所述钳位电路包括一NMOS管和一二极管串组,所述二极管串组包括若干个相互串联的二极管;Optionally, the clamping circuit includes an NMOS transistor and a diode string group, and the diode string group includes a plurality of diodes connected in series;
所述NMOS管的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,源极与所述二极管串组的正极连接;The drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the diode string group;
所述二极管串组的负极与所述回路电流采样点连接。The cathode of the diode string is connected to the loop current sampling point.
可选地,所述NMOS管的阈值电压与所述若干个二极管的导通电压之和小于所述开关管的源漏击穿电压。Optionally, the sum of the threshold voltage of the NMOS transistor and the turn-on voltages of the plurality of diodes is less than the source-drain breakdown voltage of the switching transistor.
可选地,所述钳位电路包括一NMOS管串组,所述NMOS管串组包括若干个相互串联的NMOS管;Optionally, the clamping circuit includes an NMOS transistor string group, and the NMOS transistor string group includes several NMOS transistors connected in series;
其中,每一个NMOS管的源极与后一个NMOS管的漏极和栅极之间的共接点连接;Wherein, the source of each NMOS transistor is connected to the common junction between the drain and the gate of the next NMOS transistor;
首个NMOS管的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地;The drain of the first NMOS transistor is connected to the power supply voltage sampling point, and the gate is connected to the ground with the negative electrode of the battery;
末个NMOS管的源极与所述回路电流采样点连接。The source of the last NMOS transistor is connected to the loop current sampling point.
可选地,所述若干个NMOS管的阈值电压之和小于所述开关管的源漏击穿电压。Optionally, the sum of the threshold voltages of the several NMOS transistors is less than the source-drain breakdown voltage of the switching transistors.
可选地,所述钳位电路包括一NMOS管和一PMOS管串组,所述PMOS管串组包括若干个相互串联的PMOS管;Optionally, the clamping circuit includes an NMOS transistor and a PMOS transistor string group, and the PMOS transistor string group includes a plurality of PMOS transistors connected in series;
所述NMOS管的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,源极与所述PMOS管串组中的首个PMOS管的源极连接;The drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS tube in the PMOS tube string group;
在所述PMOS管串组中,每一个PMOS管的栅极和漏极之间的共接点与后一个PMOS管的源极连接,末个PMOS管的栅极和漏极之间的共接点与所述回路电流采样点连接。In the PMOS transistor string group, the common junction between the gate and drain of each PMOS transistor is connected to the source of the next PMOS transistor, and the common junction between the gate and drain of the last PMOS transistor is connected to The loop current sampling point is connected.
可选地,所述NMOS管的阈值电压和所述若干个PMOS管的阈值电压之和小于所述开关管的源漏击穿电压。Optionally, the sum of the threshold voltage of the NMOS transistor and the threshold voltages of the several PMOS transistors is less than the source-drain breakdown voltage of the switch transistor.
可选地,所述开关管控制电路包括逻辑电路、衬底切换电路、栅极控制电路;Optionally, the switch tube control circuit includes a logic circuit, a substrate switching circuit, and a gate control circuit;
所述逻辑电路的输入端与所述延时电路的第二端连接,第一输出端与所述衬底切换电路的第一端连接,第二输出端与所述栅极控制电路的第一端连接;The input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
所述衬底切换电路的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit is connected to the substrate of the switch tube;
所述栅极控制电路的输出端与所述开关管的栅极连接;The output end of the gate control circuit is connected to the gate of the switch tube;
所述逻辑电路用于将延时电路的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路;所述衬底切换电路用于根据所述衬底切换信号切换所述开关管的衬底极性;所述栅极控制电路用于根据所述控制信号输出栅极控制信号到开关管,以控制开关管栅极的启动或关闭。The logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit. A signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal The gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
可选地,所述开关管为隔离型的MOSFET。Optionally, the switch tube is an isolated MOSFET.
可选地,所述开关管为非隔离型的MOSFET。Optionally, the switch tube is a non-isolated MOSFET.
本申请提供的电池保护电路,在现有的电池保护电路上加入钳位电路,所述钳位电路的第一端与所述电源电压采样点连接,第二端与电池的负极共接于地,第三端与所述回路电流采样点连接,所述回路电流采样点位于充电电源或负载侧的负极。通过所述钳位电路从电源电压采样点接收电能,检测所述回路电流采样点上的电压值,并在所述回路电流采样点出现负高压时对所述回路电流采样点进行钳位处理,从而有效地解决了负高压将低压开关管击穿而损坏芯片的问题,在使用低压开关管的同时实现了电池保护芯片的高耐压,且降低了芯片面积和成本。In the battery protection circuit provided by the present application, a clamp circuit is added to the existing battery protection circuit. The first end of the clamp circuit is connected to the power supply voltage sampling point, and the second end is connected to the ground with the negative electrode of the battery. , the third end is connected to the loop current sampling point, and the loop current sampling point is located at the negative pole of the charging power supply or the load side. Receive electrical energy from the power supply voltage sampling point through the clamping circuit, detect the voltage value on the loop current sampling point, and perform clamping processing on the loop current sampling point when a negative high voltage occurs at the loop current sampling point, Therefore, the problem that the low voltage switch tube is broken down by the negative high voltage and damage the chip is effectively solved, the high withstand voltage of the battery protection chip is realized while the low voltage switch tube is used, and the chip area and cost are reduced.
附图说明Description of drawings
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to illustrate the technical solutions in the embodiments of the present application more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only for the present application. In some embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.
图1是本申请一实施例提供的电池保护电路的示意图;FIG. 1 is a schematic diagram of a battery protection circuit provided by an embodiment of the present application;
图2是本申请一实施例提供的电池保护电路中的开关管的示意图;2 is a schematic diagram of a switch tube in a battery protection circuit provided by an embodiment of the present application;
图3是本申请一实施例提供的电池保护电路中的钳位电路的示意图;3 is a schematic diagram of a clamp circuit in a battery protection circuit provided by an embodiment of the present application;
图4是本申请另一实施例提供的电池保护电路中的钳位电路的示意图;4 is a schematic diagram of a clamp circuit in a battery protection circuit provided by another embodiment of the present application;
图5是本申请另一实施例提供的电池保护电路中的钳位电路的示意图;5 is a schematic diagram of a clamp circuit in a battery protection circuit provided by another embodiment of the present application;
图6是本申请另一实施例提供的电池保护电路的应用示意图。FIG. 6 is an application schematic diagram of a battery protection circuit provided by another embodiment of the present application.
具体实施方式detailed description
为了使本申请的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本申请进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本申请,并不用于限定本申请。In order to make the purpose, technical solutions and advantages of the present application more clearly understood, the present application will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application.
本申请提供的电池保护电路,在现有的电池保护电路上加入钳位电路,所述钳位电路的第一端与所述电源电压采样点连接,第二端与电池的负极共接于地,第三端与所述回路电流采样点连接,所述回路电流采样点位于充电电源或负载侧的负极。通过所述钳位电路从电源电压采样点接收电能,检测所述回路电流采样点上的电压值,并在所述回路电流采样点出现负高压时对所述回路电流采样点进行钳位处理,从而有效地解决了负高压将低压开关管击穿而损坏芯片的问题,在使用低压开关管的同时实现了电池保护芯片的高耐压,且降低了芯片面积和成本。In the battery protection circuit provided by the present application, a clamp circuit is added to the existing battery protection circuit. The first end of the clamp circuit is connected to the power supply voltage sampling point, and the second end is connected to the ground with the negative electrode of the battery. , the third end is connected to the loop current sampling point, and the loop current sampling point is located at the negative pole of the charging power supply or the load side. Receive electrical energy from the power supply voltage sampling point through the clamping circuit, detect the voltage value on the loop current sampling point, and perform clamping processing on the loop current sampling point when a negative high voltage occurs at the loop current sampling point, Therefore, the problem that the low voltage switch tube is broken down by the negative high voltage and damage the chip is effectively solved, the high withstand voltage of the battery protection chip is realized while the low voltage switch tube is used, and the chip area and cost are reduced.
图1为本申请实施例提供的电池保护电路的示意图。如图1所示,所述电池保护电路1包括基准和偏置电路10、电压保护电路20、电流保护电路30、延时电路40、开关管控制电路50、开关管60以及钳位电路70;FIG. 1 is a schematic diagram of a battery protection circuit provided by an embodiment of the present application. As shown in FIG. 1 , the battery protection circuit 1 includes a reference and bias circuit 10 , a voltage protection circuit 20 , a current protection circuit 30 , a delay circuit 40 , a switch control circuit 50 , a switch 60 and a clamp circuit 70 ;
所述电压保护电路20的第一端与电源电压采样点VDD连接,第二端与所述延时电路40的第一端连接;The first end of the voltage protection circuit 20 is connected to the power supply voltage sampling point VDD, and the second end is connected to the first end of the delay circuit 40;
所述电流保护电路30的第一端与回路电流采样点VM连接,第二端与所述延时电路40的第二端连接;The first end of the current protection circuit 30 is connected to the loop current sampling point VM, and the second end is connected to the second end of the delay circuit 40;
所述延时电路40的第二端与所述开关管控制电路50的第一端连接;The second end of the delay circuit 40 is connected to the first end of the switch control circuit 50;
所述开关管控制电路50的第二端与所述开关管60的栅极连接;The second end of the switch tube control circuit 50 is connected to the gate of the switch tube 60;
所述开关管60的源极和漏极串接在电池和充电电源或负载之间的充放电回路中;The source and drain of the switch tube 60 are connected in series in the charging and discharging loop between the battery and the charging power source or load;
所述钳位电路70的第一端与所述电源电压采样点VDD连接,第二端与电池的负极共接于地VSS,第三端与所述回路电流采样点VM连接;The first end of the clamping circuit 70 is connected to the power supply voltage sampling point VDD, the second end and the negative electrode of the battery are connected to the ground VSS, and the third end is connected to the loop current sampling point VM;
所述回路电流采样点位VM位于所述充电电源或负载侧的负极;The loop current sampling point VM is located at the negative pole of the charging power supply or the load side;
所述基准和偏置电路10与所述电源电压采样点VDD连接;The reference and bias circuit 10 is connected to the power supply voltage sampling point VDD;
所述基准和偏置电路10用于产生电压保护电路20所需的偏置电压和电流保护电路30所需的偏置电流;所述电压保护电路20用于检测电源电压,并在所述电源电压发生异常时产生检测翻转信号;所述电流保护电路30用于检测充电电流、放电电流,并在充电电流、放电电流发生异常时产生检测翻转信号;所述延时电路40用于对所述检测翻转信号进行延时处理;所述开关管控制电路50用于根据延时电路40的输出信号产生控制信号,并将所述控制信号发送至所述开关管60,以控制开关管60的启动或关闭;所述钳位电路70用于在所述回路电流采样点VM出现负高压时对所述回路电流采样点VM进行钳位处理。The reference and bias circuit 10 is used to generate the bias voltage required by the voltage protection circuit 20 and the bias current required by the current protection circuit 30; the voltage protection circuit 20 is used to detect the power supply voltage, and A detection inversion signal is generated when the voltage is abnormal; the current protection circuit 30 is used to detect the charging current and the discharging current, and generate a detection inversion signal when the charging current and the discharging current are abnormal; the delay circuit 40 is used for the The inversion signal is detected for delay processing; the switch control circuit 50 is used to generate a control signal according to the output signal of the delay circuit 40 , and send the control signal to the switch 60 to control the start of the switch 60 or off; the clamping circuit 70 is configured to perform clamping processing on the loop current sampling point VM when a negative high voltage occurs at the loop current sampling point VM.
在这里,所述基准和偏置电路10与电源电压采样点VDD连接。所述电源电压采样点VDD为所述电池保护芯片的电源正极的电压采样点。应用到电池保护芯片上,所述电源电压采样点VDD为电池正极经过预设电阻后的电压采样点,如图1中所示的VDD。所述回路电流采样点VM为电池和充电电源或负载之间的充放电回路的电流采样点,如图1中所示的VM,设置在充电电源或负载侧的负极。所述基准和偏置电路10从电源电压采样点VDD获取芯片电源的电压采样值,然后根据所述电压采样值产生偏置电压和偏置电流。其中所述偏置电压为电压保护电路20的检测阈值,所述偏置电流为电流保护电路30的检测阈值。Here, the reference and bias circuit 10 is connected to the power supply voltage sampling point VDD. The power supply voltage sampling point VDD is the voltage sampling point of the positive pole of the power supply of the battery protection chip. Applied to the battery protection chip, the power supply voltage sampling point VDD is the voltage sampling point after the positive electrode of the battery passes through a preset resistance, such as VDD as shown in FIG. 1 . The loop current sampling point VM is the current sampling point of the charging and discharging loop between the battery and the charging power source or the load. As shown in FIG. 1, VM is set at the negative electrode of the charging power source or the load side. The reference and bias circuit 10 obtains a voltage sample value of the chip power supply from the power supply voltage sample point VDD, and then generates a bias voltage and a bias current according to the voltage sample value. The bias voltage is the detection threshold of the voltage protection circuit 20 , and the bias current is the detection threshold of the current protection circuit 30 .
所述电压保护电路20使能时,检测电源电压,将所述电源电压与所述偏置电压进行比较以判断所述电池是否过放或过充的异常情况,当所述电源电压发生异常时产生检测翻转信号。所述电流保护电路30使能时,检测充电电流、放电电流,将所述充电电流、放电电流分别与对应的偏置电流比较以判断所述回路是否过放或者过充或者短路的异常情况,并在所述充电电流、放电电流发生异常时产生检测翻转信号。所述延时电路40对所述电压保护电路20或电流保护电路30发出的检测翻转信号进行延时处理,并向所述开关管控制电路50输出所述延时处理后的检测翻转信号。所述开关管控制电路50对延时电路40的输出信号进行逻辑处理,生成对开关管60的控制信号。其中,所述控制信号为开关管60的开关信号,以控制开关管60的启动或关闭。所述开关管60串接在电池和充电电源或负载之间的充放电回路中,通过控制开关管60的启动或关闭,实现对电压过充或过放、回路过放电或过充电或者短路的保护。When the voltage protection circuit 20 is enabled, the power supply voltage is detected, and the power supply voltage is compared with the bias voltage to determine whether the battery is abnormally over-discharged or over-charged. When the power supply voltage is abnormal A detection toggle signal is generated. When the current protection circuit 30 is enabled, the charging current and the discharging current are detected, and the charging current and the discharging current are respectively compared with the corresponding bias current to judge whether the circuit is abnormally over-discharged, over-charged or short-circuited. And a detection inversion signal is generated when the charging current and the discharging current are abnormal. The delay circuit 40 performs delay processing on the detection inversion signal sent by the voltage protection circuit 20 or the current protection circuit 30 , and outputs the delayed detection inversion signal to the switch control circuit 50 . The switch control circuit 50 performs logic processing on the output signal of the delay circuit 40 to generate a control signal for the switch 60 . Wherein, the control signal is a switch signal of the switch tube 60 to control the start or stop of the switch tube 60 . The switch tube 60 is connected in series in the charging and discharging circuit between the battery and the charging power source or the load, and by controlling the start or shutdown of the switch tube 60, the voltage overcharge or overdischarge, loop overdischarge or overcharge or short circuit can be realized. Protect.
所述钳位电路70从电源电压采样点VDD接收电能,检测所述回路电流采样点VM的电压信息,并在所述回路电流采样点VM出现负高压时对所述回路电流采样点VM进行钳位处理。在本实施例中,所述钳位电路70工作时,其第二端与第三端之间的压降小于所述开关管60的源漏击穿电压。由于所述钳位电路70中的第二端与电池的负极共接于地VSS,从而使得所述钳位电路70中的第三端的电压的绝对值,即所述回路电流采样点VM的电压绝对值,小于所述开关管60的源极与漏极之间的击穿电压,进而避免了开关管60的源极和漏极被击穿。The clamping circuit 70 receives power from the power supply voltage sampling point VDD, detects the voltage information of the loop current sampling point VM, and clamps the loop current sampling point VM when a negative high voltage occurs at the loop current sampling point VM. bit processing. In this embodiment, when the clamping circuit 70 is working, the voltage drop between the second terminal and the third terminal is smaller than the source-drain breakdown voltage of the switch tube 60 . Since the second terminal of the clamping circuit 70 and the negative electrode of the battery are connected to the ground VSS, the absolute value of the voltage of the third terminal in the clamping circuit 70 is the voltage of the loop current sampling point VM. The absolute value is smaller than the breakdown voltage between the source electrode and the drain electrode of the switch tube 60, thereby preventing the source electrode and the drain electrode of the switch tube 60 from being broken down.
示例性地,为了便于理解,以下以5V的低压开关管为例进行说明。所述开关管60的源漏极之间的击穿电压VDS大约为10V,电池电压为4V。当正常使用所述电池保护芯片时,所述回路电流采样点VM上的电位接近电池的负极的电压VSS,此时钳位电路70不工作。当所述电池接入高压充电器,比如接入20V的充电器时,若电池电压为4V,则回路电流采样点VM上的电压为-16V高压,此时所述开关管60的三个极的电位如图2所示,其中VSS表示漏极,VM表示源极,SW表示栅极。所述开关管60的漏极与源极之间的电压差为16V,大于所述源漏极之间的击穿电压VDS,在没有钳位电路70时所述开关管60会被击穿烧毁,电池保护芯片失效。本申请实施例通过在回路电流采样点VM处引入钳位电路70,当插入高压充电器时对回路电流采样点VM的负电压进行钳位,使回路电流采样点VM的负电压的绝对值小于所述开关管60的源漏极之间的击穿电压,比如钳位到-4V,所述开关管60的漏极与源极之间的电压差为4V,远小于所述源漏极之间的击穿电压VDS。所述开关60不会因击穿而损坏,电池保护芯片仍能够正常工作。Exemplarily, for ease of understanding, a 5V low-voltage switch tube is used as an example for description below. The breakdown voltage VDS between the source and drain of the switch tube 60 is about 10V, and the battery voltage is 4V. When the battery protection chip is used normally, the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery, and the clamping circuit 70 does not work at this time. When the battery is connected to a high-voltage charger, such as a 20V charger, if the battery voltage is 4V, the voltage on the loop current sampling point VM is -16V high voltage. At this time, the three poles of the switch tube 60 The potential is shown in Figure 2, where VSS represents the drain, VM represents the source, and SW represents the gate. The voltage difference between the drain and the source of the switch tube 60 is 16V, which is greater than the breakdown voltage VDS between the source and drain electrodes, and the switch tube 60 will be broken down and burned without the clamping circuit 70 , the battery protection chip fails. In the embodiment of the present application, by introducing a clamping circuit 70 at the loop current sampling point VM, when a high-voltage charger is inserted, the negative voltage of the loop current sampling point VM is clamped, so that the absolute value of the negative voltage of the loop current sampling point VM is less than The breakdown voltage between the source and drain of the switch tube 60 is clamped to -4V, for example, and the voltage difference between the drain and the source of the switch tube 60 is 4V, which is much smaller than the difference between the source and the drain. The breakdown voltage VDS between. The switch 60 will not be damaged due to breakdown, and the battery protection chip can still work normally.
可见,本申请实施例通过钳位电路70,在所述回路电流采样点VM出现负高压时对所述回路电流采样点VM进行钳位处理,在使用低压开关管的同时实现了电池保护芯片的高耐压,在降低电池保护芯片面积和成本的同时保证了芯片的高耐压和可靠性。It can be seen that in the embodiment of the present application, the clamp circuit 70 is used to clamp the loop current sampling point VM when a negative high voltage occurs at the loop current sampling point VM. The high withstand voltage ensures the high withstand voltage and reliability of the chip while reducing the area and cost of the battery protection chip.
可选的,如前所述,所述钳位电路70工作时,第二端与第三端之间的压降小于所述开关管的源漏击穿电压VDS。作为一种实施方式,所述钳位电路70包括一NMOS管M1和一二极管串组,所述二极管串组包括若干个相互串联的二极管;Optionally, as mentioned above, when the clamping circuit 70 is working, the voltage drop between the second terminal and the third terminal is less than the source-drain breakdown voltage VDS of the switching tube. As an embodiment, the clamping circuit 70 includes an NMOS transistor M1 and a diode string group, and the diode string group includes a plurality of diodes connected in series;
所述NMOS管M1的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,源极与所述二极管串组的正极连接;The drain of the NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the diode string;
所述二极管串组的负极与所述回路电流采样点连接。The cathode of the diode string is connected to the loop current sampling point.
在这里,所述钳位电路70工作时,所述NMOS管M1的栅极与所述二极管串组的负极之间的压降小于所述开关管的源漏击穿电压VDS。所述二极管串组中的二极管的个数可根据所述开关管的源漏击穿电压VDS的实际值进行设置,只要满足所述NMOS管的阈值电压与所述若干个二极管的导通电压之和小于所述开关管的源漏击穿电压。Here, when the clamping circuit 70 is working, the voltage drop between the gate of the NMOS transistor M1 and the negative electrode of the diode string is less than the source-drain breakdown voltage VDS of the switching transistor. The number of diodes in the diode string can be set according to the actual value of the source-drain breakdown voltage VDS of the switch, as long as the threshold voltage of the NMOS transistor and the turn-on voltage of the diodes are satisfied. and less than the source-drain breakdown voltage of the switch.
为了便于理解,承接前文示例,以5V的低压开关管为例,假设所述开关管的源漏极之间的击穿电压VDS大约为10V,电池电压为4V。如图3所示,若所述二极管串组包括三个相互串联的二极管,记为第一二极管D1、第二二极管D2、第三二极管D3。其中所述NMOS 管M1的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,源极与所述第一二极管D1的正极连接;所述第一二极管D1的负极与所述第二二极管D2的正极连接,所述第二二极管D2的负极与所述第三二极管D3的正极连接,所述第三二极管D3的负极与所述回路电流采样点VM连接。所述NMOS管M1、第一二极管D1、第二二极管D2、第三二极管D3的导通电压均为1V,共4V。当正常使用所述电池保护芯片时,所述回路电流采样点VM上的电位接近电池的负极的电压VSS,此时VM>VSS-4V,钳位电路70中的NMOS管M1和二极管串组不导通。当所述电池接入高压充电器,比如接入20V的充电器时,此时VM=4-20=-16V,VSS-4V=-4V,VM<VSS-4V,钳位电路70中的NMOS管M1和二极管串组导通,在导通之后将所述回路电流采样点VM的电压强行上拉到-4V,从而使得所述开关管的漏极与源极之间的电压差为4V,远小于所述源漏极之间的击穿电压VDS,避免了开关管60的损坏。应当理解,上述二极管个数仅为本申请的一个优选示例,具体可根据实际情况设置。For ease of understanding, following the previous example, taking a 5V low-voltage switch as an example, it is assumed that the breakdown voltage VDS between the source and drain of the switch is about 10V, and the battery voltage is 4V. As shown in FIG. 3 , if the diode string group includes three diodes connected in series, they are denoted as a first diode D1 , a second diode D2 , and a third diode D3 . The drain of the NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the first diode D1; the first The cathode of the diode D1 is connected to the anode of the second diode D2, the cathode of the second diode D2 is connected to the anode of the third diode D3, and the third diode D3 The negative pole of is connected to the loop current sampling point VM. The turn-on voltages of the NMOS transistor M1, the first diode D1, the second diode D2, and the third diode D3 are all 1V, 4V in total. When the battery protection chip is used normally, the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery. At this time, VM>VSS-4V, the NMOS transistor M1 and the diode string in the clamping circuit 70 are not connected to each other. on. When the battery is connected to a high-voltage charger, such as a 20V charger, VM=4-20=-16V, VSS-4V=-4V, VM<VSS-4V, the NMOS in the clamping circuit 70 The tube M1 and the diode string are turned on, and after the turn-on, the voltage of the loop current sampling point VM is forcibly pulled up to -4V, so that the voltage difference between the drain and the source of the switch tube is 4V, It is much smaller than the breakdown voltage VDS between the source and drain, which avoids the damage of the switch tube 60 . It should be understood that the above number of diodes is only a preferred example of the present application, and can be specifically set according to actual conditions.
作为一种实施方式,所述钳位电路70包括一NMOS管串组,所述NMOS管串组包括若干个相互串联的NMOS管;As an embodiment, the clamping circuit 70 includes an NMOS transistor string group, and the NMOS transistor string group includes a plurality of NMOS transistors connected in series;
其中,每一个NMOS管的源极与后一个NMOS管的漏极和栅极之间的共接点连接;Wherein, the source of each NMOS transistor is connected to the common junction between the drain and the gate of the next NMOS transistor;
首个NMOS管的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,The drain of the first NMOS transistor is connected to the sampling point of the power supply voltage, and the gate is connected to the ground with the negative electrode of the battery.
末个NMOS管的源极与所述回路电流采样点连接。The source of the last NMOS transistor is connected to the loop current sampling point.
在这里,所述钳位电路70工作时,首个NMOS管的栅极与末个NMOS管的源极之间的压降小于所述开关管的源漏击穿电压VDS。所述NMOS管串组中的NMOS管的个数可根据所述开关管的源漏击穿电压VDS的实际值进行设置,只要满足所述NMOS管的阈值电压之和小于所述开关管的源漏击穿电压。Here, when the clamping circuit 70 is working, the voltage drop between the gate of the first NMOS transistor and the source of the last NMOS transistor is less than the source-drain breakdown voltage VDS of the switching transistor. The number of NMOS transistors in the NMOS transistor string group can be set according to the actual value of the source-drain breakdown voltage VDS of the switching transistors, as long as the sum of the threshold voltages of the NMOS transistors is less than the source of the switching transistors. leakage breakdown voltage.
为了便于理解,承接前文示例,以5V的低压开关管为例,假设所述开关管的源漏极之间的击穿电压VDS大约为10V,电池电压为4V。如图4所示,若所述NMOS管串组包括四个相互串联的NMOS管,记为第一NMOS管M1、第二NMOS管M2、第三NMOS管M3、第四NMOS管M4。其中所述第一NMOS管M1的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,源极与所述第二NMOS管M2的漏极和栅极之间的共接点连接;所述第二NMOS管M2的源极与所述第三NMOS管M3的漏极和栅极之间的共接点连接;所述第三NMOS管M3的源极与所述第四NMOS管M4的漏极和栅极之间的共接点连接;所述第四NMOS管M4的源极与所述回路电流采样点VM连接。所述第一NMOS管M1、第二NMOS管M2、第三NMOS管M3、第四NMOS管M4的阈值电压均为1V,共4V。当正常使用所述电池保护芯片时,所述回路电流采样点VM上的电位接近电池的负极的电压VSS,此时VM>VSS-4V,钳位电路70中的第一NMOS管M1、第二NMOS管M2、第三NMOS管M3、第四NMOS管M4均不导通。当所述电池接入高压充电器,比如接入20V的充电器时,此时VM=4-20=-16V,VSS-4V=-4V,VM<VSS-4V,钳位电路70中的第一NMOS管M1、第二NMOS管M2、第三NMOS管M3、第四NMOS管M4导通,在导通之后将所述回路电流采样点VM的电压强行上拉到-4V,从而使得所述开关管的漏极与源极之间的电压差为4V,远小于所述源漏极之间的击穿电压VDS,避免了开关管60的损坏。应当理解,上述NMOS管的个数仅为本申请的一个优选示例,具体可根据实际情况设置。For ease of understanding, following the previous example, taking a 5V low-voltage switch as an example, it is assumed that the breakdown voltage VDS between the source and drain of the switch is about 10V, and the battery voltage is 4V. As shown in FIG. 4 , if the NMOS transistor string group includes four NMOS transistors connected in series, they are denoted as a first NMOS transistor M1 , a second NMOS transistor M2 , a third NMOS transistor M3 , and a fourth NMOS transistor M4 . The drain of the first NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the drain and the gate of the second NMOS transistor M2. The source of the second NMOS transistor M2 is connected to the common contact between the drain and the gate of the third NMOS transistor M3; the source of the third NMOS transistor M3 is connected to the The common contact between the drain and the gate of the fourth NMOS transistor M4 is connected; the source of the fourth NMOS transistor M4 is connected to the loop current sampling point VM. The threshold voltages of the first NMOS transistor M1, the second NMOS transistor M2, the third NMOS transistor M3, and the fourth NMOS transistor M4 are all 1V, 4V in total. When the battery protection chip is used normally, the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery, at this time VM>VSS-4V, the first NMOS transistor M1 and the second NMOS transistor in the clamping circuit 70 The NMOS transistor M2, the third NMOS transistor M3, and the fourth NMOS transistor M4 are all non-conductive. When the battery is connected to a high-voltage charger, such as a 20V charger, at this time VM=4-20=-16V, VSS-4V=-4V, VM<VSS-4V, the first voltage in the clamping circuit 70 An NMOS transistor M1, a second NMOS transistor M2, a third NMOS transistor M3, and a fourth NMOS transistor M4 are turned on, and after they are turned on, the voltage of the loop current sampling point VM is forcibly pulled up to -4V, so that the The voltage difference between the drain electrode and the source electrode of the switch tube is 4V, which is much smaller than the breakdown voltage VDS between the source and drain electrodes, which avoids the damage of the switch tube 60 . It should be understood that the above-mentioned number of NMOS transistors is only a preferred example of the present application, and can be specifically set according to actual conditions.
作为一种实施方式,所述钳位电路70包括一NMOS管和一PMOS管串组,所述PMOS管串组包括若干个相互串联的PMOS管;As an embodiment, the clamping circuit 70 includes an NMOS transistor and a PMOS transistor string group, and the PMOS transistor string group includes a plurality of PMOS transistors connected in series;
所述NMOS管的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,源极与所述PMOS管串组中的首个PMOS管的源极连接;The drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS tube in the PMOS tube string group;
在所述PMOS管串组中,每一个PMOS管的栅极和漏极之间的共接点与后一个PMOS管的源极连接,末个PMOS管的栅极和漏极之间的共接点与所述回路电流采样点连接。In the PMOS transistor string group, the common junction between the gate and drain of each PMOS transistor is connected to the source of the next PMOS transistor, and the common junction between the gate and drain of the last PMOS transistor is connected to The loop current sampling point is connected.
在这里,所述钳位电路70工作时,NMOS管的栅极与末个PMOS管的栅极和漏极共接点之间的压降小于所述开关管的源漏击穿电压VDS。所述PMOS管串组中的PMOS管的个数可根据所述开关管的源漏击穿电压VDS的实际值进行设置,只要满足所述NMOS管的阈值电压和所述若干个PMOS管的阈值电压之和小于所述开关管的源漏击穿电压。Here, when the clamping circuit 70 is working, the voltage drop between the gate of the NMOS transistor and the common junction of the gate and drain of the last PMOS transistor is less than the source-drain breakdown voltage VDS of the switch. The number of PMOS transistors in the PMOS transistor string group can be set according to the actual value of the source-drain breakdown voltage VDS of the switching transistors, as long as the threshold voltage of the NMOS transistors and the threshold value of the several PMOS transistors are satisfied. The sum of the voltages is less than the source-drain breakdown voltage of the switch tube.
为了便于理解,承接前文示例,以5V的低压开关管为例,假设所述开关管的源漏极之间的击穿电压VDS大约为10V,电池电压为4V。如图5所示,所述钳位电路70包括一NMOS管M1和一PMOS管串组,若所述PMOS管串组包括三个相互串联的PMOS管,记为第一PMOS管M2、第二PMOS管M3、第三PMOS管M4。其中所述NMOS管M1的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,源极与所述第一PMOS管M2的源极连接;所述第一PMOS管M2的栅极和漏极之间的共接点与所述第二PMOS管M3的源极连接;所述第二PMOS管M3的栅极和漏极之间的共接点与所述第三PMOS管M4的源极连接;所述第三PMOS管M4的栅极和漏极之间的共接点与所述回路电流采样点连接。所述NMOS管M1、第一PMOS管M2、第二PMOS管M3、第三PMOS管M4的阈值电压均为1V,共4V。当正常使用所述电池保护芯片时,所述回路电流采样点VM上的电位接近电池的负极的电压VSS,此时VM>VSS-4V,钳位电路70中的NMOS管M1、第一PMOS管M2、第二PMOS管M3、第三PMOS管M4均不导通。当所述电池接入高压充电器,比如接入20V的充电器时,此时VM=4-20=-16V,VSS-4V=-4V,VM<VSS-4V,钳位电路70中的NMOS管M1、第一PMOS管M2、第二PMOS管M3、第三PMOS管M4导通,在导通之后将所述回路电流采样点VM的电压强行上拉到-4V,从而使得所述开关管的漏极与源极之间的电压差为4V,远小于所述源漏极之间的击穿电压VDS,避免了开关管60的损坏。应当理解,上述PMOS管的个数仅为本申请的一个优选示例,具体可根据实际情况设置。For ease of understanding, following the previous example, taking a 5V low-voltage switch as an example, it is assumed that the breakdown voltage VDS between the source and drain of the switch is about 10V, and the battery voltage is 4V. As shown in FIG. 5 , the clamping circuit 70 includes an NMOS transistor M1 and a PMOS transistor string group. If the PMOS transistor string group includes three PMOS transistors connected in series, they are denoted as the first PMOS transistor M2 and the second PMOS transistor. The PMOS transistor M3 and the third PMOS transistor M4. The drain of the NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS transistor M2; the first The common junction between the gate and the drain of the PMOS transistor M2 is connected to the source of the second PMOS transistor M3; the common junction between the gate and the drain of the second PMOS transistor M3 is connected to the third The source of the PMOS transistor M4 is connected; the common junction between the gate and the drain of the third PMOS transistor M4 is connected to the loop current sampling point. The threshold voltages of the NMOS transistor M1, the first PMOS transistor M2, the second PMOS transistor M3, and the third PMOS transistor M4 are all 1V, 4V in total. When the battery protection chip is used normally, the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery, at this time VM>VSS-4V, the NMOS transistor M1 and the first PMOS transistor in the clamping circuit 70 M2, the second PMOS transistor M3, and the third PMOS transistor M4 are all non-conductive. When the battery is connected to a high-voltage charger, such as a 20V charger, VM=4-20=-16V, VSS-4V=-4V, VM<VSS-4V, the NMOS in the clamping circuit 70 The transistor M1, the first PMOS transistor M2, the second PMOS transistor M3, and the third PMOS transistor M4 are turned on, and after they are turned on, the voltage of the loop current sampling point VM is forcibly pulled up to -4V, thereby making the switching transistor The voltage difference between the drain and the source is 4V, which is much smaller than the breakdown voltage VDS between the source and the drain, which avoids damage to the switch tube 60 . It should be understood that the above-mentioned number of PMOS transistors is only a preferred example of the present application, and can be specifically set according to actual conditions.
可选地,在本实施例中,所述开关管60的源极和漏极对称。所述开关管控制电路50输出的衬底切换信号和控制信号,来指示所述开关管60的启动或关闭。可选地,如图6所示,为本实施例提供的电池保护电路的应用示意图。电池通过预设电阻R4和预设电容C1后,向电池保护电路提供电源电压VDD。Optionally, in this embodiment, the source and drain of the switch tube 60 are symmetrical. The substrate switching signal and the control signal output by the switch tube control circuit 50 are used to instruct the switch tube 60 to be turned on or off. Optionally, as shown in FIG. 6 , a schematic diagram of the application of the battery protection circuit provided in this embodiment is shown. After the battery passes through the preset resistor R4 and the preset capacitor C1, the power supply voltage VDD is provided to the battery protection circuit.
所述开关管控制电路50包括逻辑电路51、衬底切换电路52、栅极控制电路53;The switch control circuit 50 includes a logic circuit 51, a substrate switching circuit 52, and a gate control circuit 53;
所述逻辑电路51的输入端与所述延时电路40的第二端连接,第一输出端与所述衬底切换电路52的第一端连接,第二输出端与所述栅极控制电路53的第一端连接;The input end of the logic circuit 51 is connected to the second end of the delay circuit 40, the first output end is connected to the first end of the substrate switching circuit 52, and the second output end is connected to the gate control circuit The first end of 53 is connected;
所述衬底切换电路52的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit 52 is connected to the substrate of the switch tube;
所述栅极控制电路53的输出端与所述开关管的栅极连接;The output end of the gate control circuit 53 is connected to the gate of the switch tube;
所述逻辑电路51用于将延时电路40的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路52,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路53;所述衬底切换电路52用于根据所述衬底切换信号切换所述开关管60的衬底极性;所述栅极控制电路53用于根据所述控制信号输出栅极控制信号到开关管60,以控制开关管60栅极的启动或关闭。The logic circuit 51 is used to perform logic processing on the output signal of the delay circuit 40, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit 52, and generate a control signal, and send the substrate switching signal to the substrate switching circuit 52. The control signal is sent to the gate control circuit 53; the substrate switching circuit 52 is used to switch the substrate polarity of the switch tube 60 according to the substrate switching signal; the gate control circuit 53 uses The gate control signal is output to the switch tube 60 according to the control signal, so as to control the activation or shutdown of the gate of the switch tube 60 .
在这里,所述逻辑电路51在接收到延时电路40的输出信号后,对所述输出信号进行逻辑处理,生成衬底切换信号并发送至所述衬底切换电路52,以及生成控制信号并发送至所述栅极控制电路53。所述衬底切换电路52根据所述衬底切换信号切换所述开关管60的衬底极性,以选择开关管60为N型衬底或者P型衬底。所述栅极控制电路53则根据所述控制信号控制开关管60栅极的启动或关闭,实现对电池充放电的保护。Here, after receiving the output signal of the delay circuit 40, the logic circuit 51 performs logic processing on the output signal, generates a substrate switching signal and sends it to the substrate switching circuit 52, and generates a control signal and sends it to the substrate switching circuit 52. sent to the gate control circuit 53 . The substrate switching circuit 52 switches the substrate polarity of the switching transistor 60 according to the substrate switching signal, so as to select the switching transistor 60 as an N-type substrate or a P-type substrate. The gate control circuit 53 controls the activation or deactivation of the gate of the switch tube 60 according to the control signal, so as to realize the protection of the charging and discharging of the battery.
可选地,作为本申请的一个优选示例,如图6所示,所述电压保护电路20包括第一电阻R1、第二电阻R2、第三电阻R3、过放保护电路21、过充保护电路22;Optionally, as a preferred example of the present application, as shown in FIG. 6 , the voltage protection circuit 20 includes a first resistor R1, a second resistor R2, a third resistor R3, an overdischarge protection circuit 21, and an overcharge protection circuit. twenty two;
所述过放保护电路21的第一端与所述第一电阻R1和第二电阻R2之间的共接点连接,第二端与所述延时电路40连接;The first end of the overdischarge protection circuit 21 is connected to the common contact between the first resistor R1 and the second resistor R2, and the second end is connected to the delay circuit 40;
所述过充保护电路22的第一端与所述第二电阻R2与第三电阻R3之间的共接点连接,第二端与所述延时电路40连接;The first end of the overcharge protection circuit 22 is connected to the common contact between the second resistor R2 and the third resistor R3, and the second end is connected to the delay circuit 40;
所述第一电阻R1的另一端连接电源电压采样点;所述第三电阻R3的另一端与电池的负极共接于地;The other end of the first resistor R1 is connected to the power supply voltage sampling point; the other end of the third resistor R3 is connected to the ground with the negative electrode of the battery;
其中,所述过放保护电路21用于从所述电源电压采样点获取电源电压,并在所述电源电压小于第一电压阈值时发出检测翻转信号到所述延时电路40;所述过充保护电路22用于从所述电源电压采样点获取电源电压,并在所述电源电压大于第二电压阈值时发出检测翻转信号到所述延时电路40。Wherein, the over-discharge protection circuit 21 is used to obtain the power supply voltage from the power supply voltage sampling point, and when the power supply voltage is less than the first voltage threshold, send a detection inversion signal to the delay circuit 40; the overcharge The protection circuit 22 is configured to obtain the power supply voltage from the power supply voltage sampling point, and send a detection inversion signal to the delay circuit 40 when the power supply voltage is greater than a second voltage threshold.
在这里,所述第一电压阈值为放电保护电压阈值,是判断电池是否发生过放电的标准。所述第二电压阈值为充电保护电压阈值,是判断电池是否发生过充电的标准。Here, the first voltage threshold is a discharge protection voltage threshold, which is a criterion for judging whether the battery is over-discharged. The second voltage threshold is a charging protection voltage threshold, which is a criterion for judging whether the battery is overcharged.
当所述过放保护电路21使能时,检测电源电压,将所述电源电压与所述第一电压阈值进行比较以判断所述电池是否过放,当所述电源电压小于所述第一电压阈值时,认为所述电池发生过放,则产生检测翻转信号并发送至所述延时电路40。When the overdischarge protection circuit 21 is enabled, the power supply voltage is detected, and the power supply voltage is compared with the first voltage threshold to determine whether the battery is overdischarged, when the power supply voltage is less than the first voltage When the threshold value is reached, it is considered that the battery is over-discharged, and a detection inversion signal is generated and sent to the delay circuit 40 .
当所述过充保护电路22使能时,检测电源电压,将所述电源电压与所述第二电压阈值进行比较以判断所述电池是否过充,当所述电源电压大于所述第二电压阈值时,认为所述电池发生过放,则产生检测翻转信号并发送至所述延时电路40。When the overcharge protection circuit 22 is enabled, the power supply voltage is detected, and the power supply voltage is compared with the second voltage threshold to determine whether the battery is overcharged. When the power supply voltage is greater than the second voltage When the threshold value is reached, it is considered that the battery is over-discharged, and a detection inversion signal is generated and sent to the delay circuit 40 .
可选地,作为本申请的一个优选示例,如图6所示,所述电流保护电路30包括放电过流保护电路31、短路保护电路32、充电过流保护电路33;Optionally, as a preferred example of the present application, as shown in FIG. 6 , the current protection circuit 30 includes a discharge overcurrent protection circuit 31 , a short circuit protection circuit 32 , and a charge overcurrent protection circuit 33 ;
所述放电过流保护电路31、短路保护电路32、充电过流保护电路33的第一端分别与回路电流采样点连接;The first ends of the discharge overcurrent protection circuit 31, the short circuit protection circuit 32, and the charging overcurrent protection circuit 33 are respectively connected to the loop current sampling point;
所述放电过流保护电路31、短路保护电路32、充电过流保护电路33的第二端分别与所述延时电路40连接;The second ends of the discharge overcurrent protection circuit 31 , the short circuit protection circuit 32 and the charging overcurrent protection circuit 33 are respectively connected to the delay circuit 40 ;
所述放电过流保护电路31用于从所述回路电流采样点获取放电电流,并在所述放电电流大于第一电流阈值时发出检测翻转信号到所述延时电路40;所述充电过流保护电路33用于从所述回路电流采样点获取充电电流,并在所述充电电流大于第二电流阈值时发出检测翻转信号到所述延时电路40;所述短路保护电路32用于从所述回路电流采样点获取短路电压,并在所述短路电压大于短路保护电压阈值时发出检测翻转信号到所述延时电路40。The discharge overcurrent protection circuit 31 is used to obtain the discharge current from the loop current sampling point, and send a detection inversion signal to the delay circuit 40 when the discharge current is greater than the first current threshold; the charging overcurrent The protection circuit 33 is used for obtaining the charging current from the loop current sampling point, and when the charging current is greater than the second current threshold, a detection inversion signal is sent to the delay circuit 40; The loop current sampling point acquires the short-circuit voltage, and sends a detection inversion signal to the delay circuit 40 when the short-circuit voltage is greater than the short-circuit protection voltage threshold.
在这里,所述第一电流阈值为放电保护电流阈值,是判断电池放电过程中回路电流是否过大的标准。所述第二电流阈值为充电保护电流阈值,是判断电池充电过程中回路电流是否过大的标准。所述短路保护电压阈值是判断电池充放电过程中是否发生短路的标准。Here, the first current threshold is the discharge protection current threshold, which is a criterion for judging whether the loop current is too large during the discharging process of the battery. The second current threshold is the charging protection current threshold, which is a criterion for judging whether the loop current is too large during the battery charging process. The short-circuit protection voltage threshold is a criterion for judging whether a short-circuit occurs during charging and discharging of the battery.
当所述放电过流保护电路31使能时,检测回路电流。在实际应用中可以将第一电流阈值转换为第一保护电压,然后通过电流检测电阻获取回路电流采样点VM的电压值,将所述电压值与所述第一保护电压比较,若所述电压值大于所述第一保护电压时,则认为回路电流大于与所述第一电流阈值,电池放电过程中回路电流过大,则产生检测翻转信号并发送至所述延时电路40。When the discharge overcurrent protection circuit 31 is enabled, the loop current is detected. In practical applications, the first current threshold value can be converted into the first protection voltage, and then the voltage value of the loop current sampling point VM can be obtained through the current detection resistor, and the voltage value can be compared with the first protection voltage. When the value is greater than the first protection voltage, it is considered that the loop current is greater than the first current threshold, and the loop current is too large during battery discharge, a detection inversion signal is generated and sent to the delay circuit 40 .
当所述充电过流保护电路33使能时,检测回路电流。在实际应用中可以将第二电流阈值转换为第二保护电压,然后通过电流检测电阻获取回路电流采样点VM的电压值,将所述电压值与所述第二保护电压比较,若所述电压值小于所述第二保护电压时,则认为回路电流大于与所述第二电流阈值,电池充电过程中回路电流过大,则产生检测翻转信号并发送至所述延时电路40。When the charging overcurrent protection circuit 33 is enabled, the loop current is detected. In practical applications, the second current threshold value can be converted into the second protection voltage, and then the voltage value of the loop current sampling point VM can be obtained through the current detection resistor, and the voltage value can be compared with the second protection voltage. When the value is less than the second protection voltage, it is considered that the loop current is greater than the second current threshold, and the loop current is too large during battery charging, and a detection inversion signal is generated and sent to the delay circuit 40 .
当所述短路保护电路32使能时,检测电池是否发生短路。在实际应用中是预设短路保护电压阈值,获取回路电流采样点VM的电压值,将所述电压值与所述短路保护电压阈值比较,若所述电压值小于所述短路保护电压阈值时,则认为电池发生短路,则产生检测翻转信号并发送至所述延时电路40。When the short-circuit protection circuit 32 is enabled, it is detected whether the battery is short-circuited. In practical applications, the short-circuit protection voltage threshold is preset, the voltage value of the loop current sampling point VM is obtained, and the voltage value is compared with the short-circuit protection voltage threshold. If the voltage value is smaller than the short-circuit protection voltage threshold, Then, it is considered that the battery is short-circuited, and a detection inversion signal is generated and sent to the delay circuit 40 .
以上所述实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述实施例对本申请进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换, 并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围,均应包含在本申请的保护范围之内。The above-mentioned embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the above-mentioned embodiments, those of ordinary skill in the art should understand that: it can still be used for the above-mentioned implementations. The technical solutions described in the examples are modified, or some technical features thereof are equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the various embodiments of the application, and should be included in the within the scope of protection of this application.

Claims (18)

  1. 一种电池保护电路,其中,包括:A battery protection circuit, comprising:
    基准和偏置电路、电压保护电路、电流保护电路、延时电路、开关管控制电路、开关管以及钳位电路;Reference and bias circuit, voltage protection circuit, current protection circuit, delay circuit, switch control circuit, switch and clamp circuit;
    所述电压保护电路的第一端与电源电压采样点连接,第二端与所述延时电路的第一端连接;The first end of the voltage protection circuit is connected to the power supply voltage sampling point, and the second end is connected to the first end of the delay circuit;
    所述电流保护电路的第一端与回路电流采样点连接,第二端与所述延时电路的第二端连接;The first end of the current protection circuit is connected to the loop current sampling point, and the second end is connected to the second end of the delay circuit;
    所述延时电路的第二端与所述开关管控制电路的第一端连接;The second end of the delay circuit is connected to the first end of the switch control circuit;
    所述开关管控制电路的第二端与所述开关管的栅极连接;The second end of the switch tube control circuit is connected to the gate of the switch tube;
    所述开关管的源极和漏极串接在电池和充电电源或负载之间的充放电回路中;The source and drain of the switch tube are connected in series in the charging and discharging loop between the battery and the charging power source or the load;
    所述钳位电路的第一端与所述电源电压采样点连接,第二端与电池的负极共接于地,第三端与所述回路电流采样点连接;The first end of the clamping circuit is connected to the power supply voltage sampling point, the second end is connected to the ground with the negative electrode of the battery, and the third end is connected to the loop current sampling point;
    所述回路电流采样点位位于所述充电电源或负载侧的负极;The loop current sampling point is located at the negative pole of the charging power supply or the load side;
    所述基准和偏置电路与所述电源电压采样点连接;the reference and bias circuits are connected to the power supply voltage sampling point;
    所述基准和偏置电路用于产生电压保护电路所需的偏置电压和电流保护电路所需的偏置电流;所述电压保护电路用于检测电源电压,并在所述电源电压发生异常时产生检测翻转信号;所述电流保护电路用于检测充电电流、放电电流,并在充电电流、放电电流发生异常时产生检测翻转信号;所述延时电路用于对所述检测翻转信号进行延时处理;所述开关管控制电路用于根据延时电路的输出信号产生控制信号,并将所述控制信号发送至所述开关管,以控制开关管的启动或关闭;所述钳位电路用于在所述回路电流采样点出现负高压时对所述回路电流采样点进行钳位处理。The reference and bias circuits are used to generate the bias voltage required by the voltage protection circuit and the bias current required by the current protection circuit; the voltage protection circuit is used to detect the power supply voltage, and when the power supply voltage is abnormal generating a detection inversion signal; the current protection circuit is used for detecting charging current and discharging current, and generating a detection inversion signal when the charging current and discharging current are abnormal; the delay circuit is used for delaying the detection inversion signal processing; the switch tube control circuit is used to generate a control signal according to the output signal of the delay circuit, and send the control signal to the switch tube to control the start or close of the switch tube; the clamp circuit is used for The loop current sampling point is clamped when a negative high voltage occurs at the loop current sampling point.
  2. 如权利要求1所述的电池保护电路,其中,所述钳位电路工作时,其第二端与第三端之间的压降小于所述开关管的源漏击穿电压。The battery protection circuit according to claim 1, wherein when the clamping circuit operates, the voltage drop between the second terminal and the third terminal thereof is smaller than the source-drain breakdown voltage of the switch tube.
  3. 如权利要求2所述的电池保护电路,其中,所述钳位电路包括一NMOS管和一二极管串组,所述二极管串组包括若干个相互串联的二极管;The battery protection circuit of claim 2, wherein the clamping circuit comprises an NMOS transistor and a diode string group, and the diode string group comprises a plurality of diodes connected in series;
    所述NMOS管的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,源极与所述二极管串组的正极连接;The drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the diode string group;
    所述二极管串组的负极与所述回路电流采样点连接。The cathode of the diode string is connected to the loop current sampling point.
  4. 如权利要求3所述的电池保护电路,其中,所述NMOS管的阈值电压与所述若干个二极管的导通电压之和小于所述开关管的源漏击穿电压。The battery protection circuit of claim 3, wherein the sum of the threshold voltage of the NMOS transistor and the turn-on voltages of the plurality of diodes is less than the source-drain breakdown voltage of the switch transistor.
  5. 如权利要求2所述的电池保护电路,其中,所述钳位电路包括一NMOS管串组,所述NMOS管串组包括若干个相互串联的NMOS管;The battery protection circuit according to claim 2, wherein the clamping circuit comprises an NMOS transistor string group, and the NMOS transistor string group comprises a plurality of NMOS transistors connected in series;
    其中,每一个NMOS管的源极与后一个NMOS管的漏极和栅极之间的共接点连接;Wherein, the source of each NMOS transistor is connected to the common junction between the drain and the gate of the next NMOS transistor;
    首个NMOS管的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地;The drain of the first NMOS transistor is connected to the power supply voltage sampling point, and the gate is connected to the ground with the negative electrode of the battery;
    末个NMOS管的源极与所述回路电流采样点连接。The source of the last NMOS transistor is connected to the loop current sampling point.
  6. 如权利要求5所述的电池保护电路,其中,所述若干个NMOS管的阈值电压之和小于所述开关管的源漏击穿电压。The battery protection circuit of claim 5, wherein the sum of the threshold voltages of the plurality of NMOS transistors is less than the source-drain breakdown voltage of the switching transistors.
  7. 如权利要求2所述的电池保护电路,其中,所述钳位电路包括一NMOS管和一PMOS管串组,所述PMOS管串组包括若干个相互串联的PMOS管;The battery protection circuit according to claim 2, wherein the clamping circuit comprises an NMOS transistor and a PMOS transistor string group, and the PMOS transistor string group comprises a plurality of PMOS transistors connected in series;
    所述NMOS管的漏极与所述电源电压采样点连接,栅极与所述电池的负极共接于地,源极与所述PMOS管串组中的首个PMOS管的源极连接;The drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS tube in the PMOS tube string group;
    在所述PMOS管串组中,每一个PMOS管的栅极和漏极之间的共接点与后一个PMOS管的源极连接,末个PMOS管的栅极和漏极之间的共接点与所述回路电流采样点连接。In the PMOS transistor string group, the common junction between the gate and drain of each PMOS transistor is connected to the source of the next PMOS transistor, and the common junction between the gate and drain of the last PMOS transistor is connected to The loop current sampling point is connected.
  8. 如权利要求7所述的电池保护电路,其中,所述NMOS管的阈值电压和所述若干个PMOS管的阈值电压之和小于所述开关管的源漏击穿电压。The battery protection circuit according to claim 7, wherein the sum of the threshold voltage of the NMOS transistors and the threshold voltages of the plurality of PMOS transistors is less than the source-drain breakdown voltage of the switching transistors.
  9. 如权利要求1所述的电池保护电路,其中,所述开关管控制电路包括逻辑电路、衬底切换电路、栅极控制电路;The battery protection circuit of claim 1, wherein the switch control circuit comprises a logic circuit, a substrate switching circuit, and a gate control circuit;
    所述逻辑电路的输入端与所述延时电路的第二端连接,第一输出端与所述衬底切换电路的第一端连接,第二输出端与所述栅极控制电路的第一端连接;The input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
    所述衬底切换电路的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit is connected to the substrate of the switch tube;
    所述栅极控制电路的输出端与所述开关管的栅极连接;The output end of the gate control circuit is connected to the gate of the switch tube;
    所述逻辑电路用于将延时电路的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路;所述衬底切换电路用于根据所述衬底切换信号切换所述开关管的衬底极性;所述栅极控制电路用于根据所述控制信号输出栅极控制信号到开关管,以控制开关管栅极的启动或关闭。The logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit. A signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal The gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  10. 如权利要求2所述的电池保护电路,其中,所述开关管控制电路包括逻辑电路、衬底切换电路、栅极控制电路;The battery protection circuit of claim 2, wherein the switch control circuit comprises a logic circuit, a substrate switching circuit, and a gate control circuit;
    所述逻辑电路的输入端与所述延时电路的第二端连接,第一输出端与所述衬底切换电路的第一端连接,第二输出端与所述栅极控制电路的第一端连接;The input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
    所述衬底切换电路的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit is connected to the substrate of the switch tube;
    所述栅极控制电路的输出端与所述开关管的栅极连接;The output end of the gate control circuit is connected to the gate of the switch tube;
    所述逻辑电路用于将延时电路的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路;所述衬底切换电路用于根据所述衬底切换信号切换所述开关管的衬底极性;所述栅极控制电路用于根据所述控制信号输出栅极控制信号到开关管,以控制开关管栅极的启动或关闭。The logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit. A signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal The gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  11. 如权利要求3所述的电池保护电路,其中,所述开关管控制电路包括逻辑电路、衬底切换电路、栅极控制电路;The battery protection circuit of claim 3, wherein the switch control circuit comprises a logic circuit, a substrate switching circuit, and a gate control circuit;
    所述逻辑电路的输入端与所述延时电路的第二端连接,第一输出端与所述衬底切换电路的第一端连接,第二输出端与所述栅极控制电路的第一端连接;The input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
    所述衬底切换电路的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit is connected to the substrate of the switch tube;
    所述栅极控制电路的输出端与所述开关管的栅极连接;The output end of the gate control circuit is connected to the gate of the switch tube;
    所述逻辑电路用于将延时电路的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路;所述衬底切换电路用于根据所述衬底切换信号切换所述开关管的衬底极性;所述栅极控制电路用于根据所述控制信号输出栅极控制信号到开关管,以控制开关管栅极的启动或关闭。The logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit. A signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal The gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  12. 如权利要求4所述的电池保护电路,其中,所述开关管控制电路包括逻辑电路、衬底切换电路、栅极控制电路;The battery protection circuit of claim 4, wherein the switch control circuit comprises a logic circuit, a substrate switching circuit, and a gate control circuit;
    所述逻辑电路的输入端与所述延时电路的第二端连接,第一输出端与所述衬底切换电路的第一端连接,第二输出端与所述栅极控制电路的第一端连接;The input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
    所述衬底切换电路的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit is connected to the substrate of the switch tube;
    所述栅极控制电路的输出端与所述开关管的栅极连接;The output end of the gate control circuit is connected to the gate of the switch tube;
    所述逻辑电路用于将延时电路的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路;所述衬底切换电路用于根据所述衬底切换信号切换所述开关管的衬底极性;所述栅极控制电路用于根据所述控制信号输出栅极控制信号到开关管,以控制开关管栅极的启动或关闭。The logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit. A signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal The gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  13. 如权利要求5所述的电池保护电路,其中,所述开关管控制电路包括逻辑电路、衬底切换电路、栅极控制电路;The battery protection circuit of claim 5, wherein the switch control circuit comprises a logic circuit, a substrate switching circuit, and a gate control circuit;
    所述逻辑电路的输入端与所述延时电路的第二端连接,第一输出端与所述衬底切换电路的第一端连接,第二输出端与所述栅极控制电路的第一端连接;The input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
    所述衬底切换电路的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit is connected to the substrate of the switch tube;
    所述栅极控制电路的输出端与所述开关管的栅极连接;The output end of the gate control circuit is connected to the gate of the switch tube;
    所述逻辑电路用于将延时电路的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路;所述衬底切换电路用于根据所述衬底切换信号切换所述开关管的衬底极性;所述栅极控制电路用于根据所述控制信号输出栅极控制信号到开关管,以控制开关管栅极的启动或关闭。The logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit. A signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal The gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  14. 如权利要求6所述的电池保护电路,其中,所述开关管控制电路包括逻辑电路、衬底切换电路、栅极控制电路;The battery protection circuit of claim 6, wherein the switch control circuit comprises a logic circuit, a substrate switching circuit, and a gate control circuit;
    所述逻辑电路的输入端与所述延时电路的第二端连接,第一输出端与所述衬底切换电路的第一端连接,第二输出端与所述栅极控制电路的第一端连接;The input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
    所述衬底切换电路的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit is connected to the substrate of the switch tube;
    所述栅极控制电路的输出端与所述开关管的栅极连接;The output end of the gate control circuit is connected to the gate of the switch tube;
    所述逻辑电路用于将延时电路的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路;所述衬底切换电路用于根据所述衬底切换信号切换所述开关管的衬底极性;所述栅极控制电路用于根据所述控制信号输出栅极控制信号到开关管,以控制开关管栅极的启动或关闭。The logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit. A signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal The gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  15. 如权利要求7所述的电池保护电路,其中,所述开关管控制电路包括逻辑电路、衬底切换电路、栅极控制电路;The battery protection circuit of claim 7, wherein the switch control circuit comprises a logic circuit, a substrate switching circuit, and a gate control circuit;
    所述逻辑电路的输入端与所述延时电路的第二端连接,第一输出端与所述衬底切换电路的第一端连接,第二输出端与所述栅极控制电路的第一端连接;The input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
    所述衬底切换电路的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit is connected to the substrate of the switch tube;
    所述栅极控制电路的输出端与所述开关管的栅极连接;The output end of the gate control circuit is connected to the gate of the switch tube;
    所述逻辑电路用于将延时电路的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路;所述衬底切换电路用于根据所述衬底切换信号切换所述开关管的衬底极性;所述栅极控制电路用于根据所述控制信号输出栅极控制信号到开关管,以控制开关管栅极的启动或关闭。The logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit. A signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal The gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  16. 如权利要求8所述的电池保护电路,其中,所述开关管控制电路包括逻辑电路、衬底切换电路、栅极控制电路;The battery protection circuit of claim 8, wherein the switch control circuit comprises a logic circuit, a substrate switching circuit, and a gate control circuit;
    所述逻辑电路的输入端与所述延时电路的第二端连接,第一输出端与所述衬底切换电路的第一端连接,第二输出端与所述栅极控制电路的第一端连接;The input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
    所述衬底切换电路的第二端与所述开关管的衬底连接;The second end of the substrate switching circuit is connected to the substrate of the switch tube;
    所述栅极控制电路的输出端与所述开关管的栅极连接;The output end of the gate control circuit is connected to the gate of the switch tube;
    所述逻辑电路用于将延时电路的输出信号进行逻辑处理,生成衬底切换信号,并将所述衬底切换信号发送至所述衬底切换电路,以及生成控制信号,并将所述控制信号发送至所述栅极控制电路;所述衬底切换电路用于根据所述衬底切换信号切换所述开关管的衬底极性;所述栅极控制电路用于根据所述控制信号输出栅极控制信号到开关管,以控制开关管栅极的启动或关闭。The logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit. A signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal The gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  17. 如权利要求1所述的电池保护电路,其中,所述开关管为隔离型的MOSFET。The battery protection circuit of claim 1, wherein the switch is an isolated MOSFET.
  18. 如权利要求1所述的电池保护电路,其中,所述开关管为非隔离型的MOSFET。The battery protection circuit of claim 1, wherein the switch is a non-isolated MOSFET.
PCT/CN2021/112960 2020-09-21 2021-08-17 Battery protection circuit WO2022057548A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010995509.X 2020-09-21
CN202010995509.XA CN112152288A (en) 2020-09-21 2020-09-21 Battery protection circuit

Publications (1)

Publication Number Publication Date
WO2022057548A1 true WO2022057548A1 (en) 2022-03-24

Family

ID=73894089

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/112960 WO2022057548A1 (en) 2020-09-21 2021-08-17 Battery protection circuit

Country Status (2)

Country Link
CN (1) CN112152288A (en)
WO (1) WO2022057548A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116505474A (en) * 2023-05-05 2023-07-28 无锡市稳先微电子有限公司 Battery protection circuit and electronic device
CN116544904A (en) * 2023-07-04 2023-08-04 浙江大学 Low-voltage difference detection anti-reverse-filling protection circuit, load switch chip and power supply system
CN116896363A (en) * 2023-09-08 2023-10-17 成都利普芯微电子有限公司 NMOS control circuit and battery protection chip

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112152288A (en) * 2020-09-21 2020-12-29 深圳市创芯微微电子有限公司 Battery protection circuit
CN112583087B (en) * 2021-03-01 2021-07-06 深圳市创芯微微电子有限公司 Battery protection chip and system
CN113437064B (en) * 2021-07-20 2023-08-18 上海华虹宏力半导体制造有限公司 Voltage protection circuit
CN113422595B (en) * 2021-08-24 2021-11-19 成都市易冲半导体有限公司 Electronic switch for processing negative voltage AC signal and control method thereof
CN114050554B (en) * 2022-01-11 2022-05-13 深圳市创芯微微电子有限公司 Battery protection circuit and power tube control method thereof
CN114069567B (en) * 2022-01-11 2022-05-13 深圳市创芯微微电子有限公司 Battery protection circuit and battery voltage sampling circuit thereof
CN115987224B (en) * 2023-03-20 2023-06-27 江苏长晶科技股份有限公司 Circuit for realizing application of low-voltage operational amplifier to high voltage by adopting bootstrap technology
CN116799766B (en) * 2023-08-24 2023-12-12 禹创半导体(深圳)有限公司 Protection circuit for detecting load during cascade application of battery protection chips
CN117970169A (en) * 2024-03-29 2024-05-03 苏州元脑智能科技有限公司 Power supply short circuit detection circuit and detection method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180287373A1 (en) * 2017-04-04 2018-10-04 Semiconductor Components Industries, Llc Methods and apparatus for voltage and current calibration
CN109449891A (en) * 2018-11-06 2019-03-08 苏州赛芯电子科技有限公司 Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability
CN111564825A (en) * 2020-07-09 2020-08-21 深圳市创芯微微电子有限公司 Battery protection circuit
CN112152288A (en) * 2020-09-21 2020-12-29 深圳市创芯微微电子有限公司 Battery protection circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180287373A1 (en) * 2017-04-04 2018-10-04 Semiconductor Components Industries, Llc Methods and apparatus for voltage and current calibration
CN109449891A (en) * 2018-11-06 2019-03-08 苏州赛芯电子科技有限公司 Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability
CN111564825A (en) * 2020-07-09 2020-08-21 深圳市创芯微微电子有限公司 Battery protection circuit
CN112152288A (en) * 2020-09-21 2020-12-29 深圳市创芯微微电子有限公司 Battery protection circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116505474A (en) * 2023-05-05 2023-07-28 无锡市稳先微电子有限公司 Battery protection circuit and electronic device
CN116505474B (en) * 2023-05-05 2023-10-24 无锡市稳先微电子有限公司 Battery protection circuit and electronic device
CN116544904A (en) * 2023-07-04 2023-08-04 浙江大学 Low-voltage difference detection anti-reverse-filling protection circuit, load switch chip and power supply system
CN116544904B (en) * 2023-07-04 2023-09-22 浙江大学 Low-voltage difference detection anti-reverse-filling protection circuit, load switch chip and power supply system
CN116896363A (en) * 2023-09-08 2023-10-17 成都利普芯微电子有限公司 NMOS control circuit and battery protection chip
CN116896363B (en) * 2023-09-08 2023-12-05 成都利普芯微电子有限公司 NMOS control circuit and battery protection chip

Also Published As

Publication number Publication date
CN112152288A (en) 2020-12-29

Similar Documents

Publication Publication Date Title
WO2022057548A1 (en) Battery protection circuit
CN212543359U (en) Single-wafer battery protection circuit, battery charging and discharging circuit and portable electronic equipment
CN213402499U (en) Battery protection circuit
US10199679B2 (en) Battery protection integrated circuit, battery protection apparatus and battery pack
CN107565684B (en) Integrated AC detection and power control system for emergency lighting
US8405359B2 (en) Battery protection IC and battery device
KR101784740B1 (en) Battery protection circuit and battery pack including same
KR102649721B1 (en) Battery protection circuit and lithium battery system
CN112583087B (en) Battery protection chip and system
CN111614071B (en) Single-wafer battery protection circuit, charging and discharging circuit and portable electronic equipment
CN103972949A (en) Charge/discharge control circuit and battery device
US9401615B2 (en) Charging and discharging control circuit and battery device
CN110890744A (en) Battery pack short-circuit protection circuit device and method
CN114487900A (en) Short-circuit detection device and control method of switched capacitor converter
US8988840B2 (en) Overcharge prevention circuit and semiconductor device
CN112688394A (en) Lithium battery charging protection circuit and lithium battery
CN216774327U (en) Battery protection chip and battery system
CN214755515U (en) Battery protection chip and protection circuit thereof
CN113541249B (en) Circuit device for realizing charging path control based on pre-driving module and electronic equipment
CN209767182U (en) Battery protection circuit
CN112769113A (en) Battery protection chip and protection circuit thereof
KR20050057693A (en) Charge-discharge protect circuit
US20230375641A1 (en) Short Circuit Detection Apparatus and Control Method for Switched Capacitor Converter
CN114069567B (en) Battery protection circuit and battery voltage sampling circuit thereof
CN110095646B (en) Negative pressure detection circuit and battery protection circuit

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21868376

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 02/08/2023)

122 Ep: pct application non-entry in european phase

Ref document number: 21868376

Country of ref document: EP

Kind code of ref document: A1