CN112769113A - Battery protection chip and protection circuit thereof - Google Patents

Battery protection chip and protection circuit thereof Download PDF

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Publication number
CN112769113A
CN112769113A CN202011532731.2A CN202011532731A CN112769113A CN 112769113 A CN112769113 A CN 112769113A CN 202011532731 A CN202011532731 A CN 202011532731A CN 112769113 A CN112769113 A CN 112769113A
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module
voltage
protection
protection module
mos transistor
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李�杰
白青刚
杨小华
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Shenzhen ICM Microelectronics Co Ltd
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Shenzhen ICM Microelectronics Co Ltd
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Priority to CN202011532731.2A priority Critical patent/CN112769113A/en
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The invention provides a battery protection chip and a protection circuit thereof, wherein the protection circuit comprises a first protection module and a second protection module, the first protection module is used for clamping an input voltage to obtain a first voltage, and the second protection module is used for clamping the first voltage to obtain a second voltage and outputting the second voltage to a battery detection module. According to the invention, the first protection module and the second protection module are arranged, so that the over-high peak voltage is clamped below the breakdown voltage of the chip process, the chip is not damaged by the peak voltage under the condition of not increasing extra power consumption and cost, the reliability of the chip is improved, and the problem that the area and the cost of the chip are increased by adopting a high-voltage process to avoid the breakdown of the chip by the peak voltage in the prior art is solved.

Description

Battery protection chip and protection circuit thereof
Technical Field
The invention relates to the technical field of battery protection, in particular to a battery protection chip and a protection circuit thereof.
Background
Fig. 1 shows a basic structure block diagram of a conventional battery protection chip 10, which internally includes a battery detection module 11, a delay module 12 and a logic control module 13. The battery detection module 11 detects a battery voltage VDD, the delay module 12 delays an output signal of the battery detection module 11, an output of the delay module is used as an input of the logic control module 13, DO and CO signals are output after being processed by the logic control module 13, and the DO and the CO realize protection of battery charging and discharging by controlling an external switching tube.
According to the scheme, the 5V CMOS process is adopted, the voltage resistance of the device is about 10V generally, peak voltage of about 16V can be generated when short circuit occurs between VDD and VSS in the production test process, and a battery protection chip made of the 5V CMOS can be broken down by the peak voltage to cause damage to the chip. If a high-pressure process capable of resisting high pressure is adopted, the area and the cost of the chip are increased.
Disclosure of Invention
The invention aims to provide a battery protection chip and a protection circuit thereof, which aim to solve the problem that the area and the cost of the chip are increased by adopting a high-voltage process in order to avoid the breakdown of the chip by peak voltage in the prior art.
A first aspect of an embodiment of the present invention provides a protection circuit for a battery protection chip, where the protection circuit includes:
the first protection module is connected with the power input end at a first end and connected with the grounding end at a second end and used for clamping the input voltage to obtain a first voltage;
and the first end of the second protection module is connected with the power input end of the first protection module, the second end of the second protection module is connected with the power input end of the battery protection chip, and the third end of the second protection module is connected with the grounding end and used for clamping the first voltage to obtain a second voltage and outputting the second voltage to the battery detection module.
A second aspect of the present invention provides a battery protection chip, including:
the first protection module is connected with the power input end at a first end and connected with the grounding end at a second end and used for clamping the input voltage to obtain a first voltage;
the first end of the second protection module is connected with a power supply input end and the first end of the first protection module, the second end is a voltage output end, and the third end is connected with a grounding end and is used for clamping the first voltage to obtain a second voltage;
the input end of the battery detection module is connected with the second end of the second protection module and used for comparing the second voltage with a preset voltage and outputting a control signal comprising a comparison result;
the input end of the delay module is connected with the output end of the battery detection module and is used for delaying the control signal;
and the input end of the logic control module is connected with the output end of the delay module, the first output end of the logic control module is connected with the substrate of the switch tube, and the second output end of the logic control module is connected with the grid electrode of the switch tube and is used for outputting a first control signal and a second control signal according to the delayed control signal so as to control the switch tube.
A third aspect of the present invention provides a battery protection chip, including:
the first protection module is connected with the power input end at a first end and connected with the grounding end at a second end and used for clamping the input voltage to obtain a first voltage;
the first end of the second protection module is connected with a power supply input end and the first end of the first protection module, the second end is a voltage output end, and the third end is connected with a grounding end and is used for clamping the first voltage to obtain a second voltage;
the input end of the battery detection module is connected with the second end of the second protection module and used for comparing the second voltage with a preset voltage and outputting a control signal comprising a comparison result;
the input end of the delay module is connected with the output end of the battery detection module and is used for delaying the control signal;
the input end of the logic control module is connected with the output end of the delay module and used for outputting a first control signal and a second control signal according to the delayed control signal;
the input end of the substrate switching module is connected with the first output end of the logic control module, the output end of the substrate switching module is connected with the substrate of the charge-discharge control switch tube, and the substrate switching module is used for receiving the first control signal and selecting the substrate of the charge-discharge control switch tube according to the first control signal;
and the input end of the grid control module is connected with the second output end of the logic control module, and the output end of the grid control module is connected with the grid of the charge and discharge control switch tube and is used for receiving the second control signal and controlling the charge and discharge control switch tube to be switched on or switched off according to the second control signal.
The invention provides a battery protection chip and a protection circuit thereof, wherein the protection circuit comprises a first protection module and a second protection module, the first protection module is used for clamping an input voltage to obtain a first voltage, and the second protection module is used for clamping the first voltage to obtain a second voltage and outputting the second voltage to a battery detection module. According to the invention, the first protection module and the second protection module are arranged, so that the overhigh peak voltage is clamped below the breakdown voltage of the chip process, the chip is not damaged by the peak voltage under the condition of not increasing extra power consumption and cost, the reliability of the chip is improved, and the problem that the area and the cost of the chip are increased by adopting a high-voltage process to avoid the breakdown of the chip by the peak voltage in the prior art is solved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the embodiments or drawings used in the prior art description, and obviously, the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a battery protection chip provided in the prior art;
fig. 2 is a schematic structural diagram of a battery protection chip according to a first embodiment of the present invention;
fig. 3 is a circuit diagram of a first protection module in a battery protection chip according to an embodiment of the present invention;
fig. 4 is another circuit diagram of a first protection module in a battery protection chip according to an embodiment of the present invention;
fig. 5 is a circuit diagram of a second protection module in a battery protection chip according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a battery protection chip according to a third embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
An embodiment of the present invention provides a protection circuit of a battery protection chip, as shown in fig. 2, the protection circuit includes:
a first protection module 21, a first end of which is connected to the power input end and a second end of which is connected to the ground end, for clamping the input voltage to obtain a first voltage;
and a first end of the second protection module 22 is connected with the power input end and the first end of the first protection module 21, a second end is connected with the power input end of the battery protection chip 10, and a third end is connected with the ground terminal, and is used for clamping the first voltage to obtain a second voltage and outputting the second voltage to the battery detection module.
The first protection module 21 is configured to clamp the peak voltage in the input voltage, and clamp the peak voltage at a clamping voltage VH (for example, VH is 12V), so as to clamp the peak voltage for the first time, and avoid the output peak voltage from being too high.
As a first embodiment, as shown in fig. 3, the first protection module 21 includes a MOS transistor Q1, a drain of the MOS transistor Q1 is a first end of the first protection module 21, and a gate and a source of the MOS transistor Q1 are connected in common to form a second end of the first protection module 21.
In fig. 3, the MOS transistor Q1 is a 12V high-voltage transistor, and the trigger voltage of the TLP curve is generally 15V, that is, when the peak voltage of VDD exceeds 15V, the MOS transistor Q1 starts to work in the negative resistance process in the TLP curve, and then clamps the peak voltage of VDD to about VH (about 13V).
As a second embodiment, as shown in fig. 4, the first protection module 21 includes a MOS transistor Q2 and a MOS transistor Q3, a drain of the MOS transistor Q2 is a first end of the first protection module 21, a gate and a source of the MOS transistor Q2 are connected to a drain of the MOS transistor Q2, and a gate and a source of the MOS transistor Q3 are connected to a common end to form a second end of the first protection module 21.
The first protection module in fig. 4 is formed by connecting two ESD transistors of 5V in series, the trigger voltage of the TLP curve is generally 12V, when the peak voltage of VDD exceeds 12V, the MOS transistor Q1 and the MOS transistor Q2 start to operate in a negative resistance process, and then the peak voltage of VDD is clamped around VH (about 11V).
The second protection module 22 further clamps the clamping voltage output by the first protection module 21 to obtain a second voltage, and the second voltage is lower than (about 10V) of the breakdown voltage VBV (e.g. 6V) of the battery protection chip to prevent the breakdown of the post-stage circuit, thereby effectively protecting the anti-spike voltage capability of the chip without increasing any extra power consumption and improving the reliability of the chip.
As an embodiment, as shown in fig. 5, the second protection module 22 includes a resistor R1 and a MOS transistor Q4, a first end of the resistor R1 is a first end of the second protection module 22, a first end of the resistor R1 is connected to a drain of the MOS transistor Q4 to form a second end of the second protection module 22, and a gate and a source of the MOS transistor Q4 are connected to form a third end of the second protection module 22.
Wherein, the resistor R1 is used for current limiting, the MOS transistor Q4 is used for clamping, the MOS transistor Q4 is an NMOS transistor, since the first protection circuit has clamped the peak voltage of VDD around VH, the MOS transistor Q4 can use a common 5V NMOS transistor, the clamping voltage of which is generally around 6V, so the voltage of VDD0 is clamped around 6V, and the current I flowing through the resistor R1 is (VDD-VDD0)/R1, where VDD is the voltage clamped by the first protection module 21, VDD0 is the voltage clamped by the second protection module 22, and the voltage value must be lower than the breakdown voltage VBV (about 10V) of the 5V CMOS transistor, so the width-to-length ratio of the MOS transistor Q4 is only needed to be selected reasonably, so that the current that can flow after the negative resistance process is greater than I, namely, the VDD0 can be clamped around 6V and far lower than the breakdown voltage VBV (about 10V) of the post-stage circuit connected to the second protection module 22, therefore, even if the VDD end has high peak voltage, the chip can not be damaged after passing through the two-stage protection circuit.
The embodiment of the invention provides a protection circuit of a battery protection chip, which comprises a first protection module 21 and a second protection module 22, wherein the first protection module 21 is used for clamping an input voltage to obtain a first voltage, and the second protection module 22 is used for clamping the first voltage to obtain a second voltage and outputting the second voltage to the battery protection chip. According to the invention, the first protection module 21 and the second protection module 22 are arranged, so that the over-high peak voltage is clamped below the breakdown voltage of the chip process, the chip is not damaged by the peak voltage under the condition of not increasing extra power consumption and cost, the reliability of the chip is improved, and the problem that the area and the cost of the chip are increased by adopting a high-voltage process to avoid the breakdown of the chip by the peak voltage in the prior art is solved.
An embodiment of the present invention provides a battery protection chip, as shown in fig. 2, the battery protection chip includes:
a first protection module 21, a first end of which is connected to the power input end and a second end of which is connected to the ground end, for clamping the input voltage to obtain a first voltage;
a first end of the second protection module 22 is connected to the power input end and the first end of the first protection module 21, a second end is a voltage output end, and a third end is connected to a ground end, and is used for clamping the first voltage to obtain a second voltage;
a battery detection module 11, an input end of which is connected to a second end of the second protection module 22, for comparing the second voltage with a preset voltage and outputting a control signal including a comparison result;
a delay module 12, the input end of which is connected to the output end of the battery detection module 11, for delaying the control signal;
and the input end of the logic control module 13 is connected with the output end of the delay module 12, the first output end of the logic control module is connected with the substrate of the switching tube, and the second output end of the logic control module is connected with the grid electrode of the switching tube and is used for outputting a first control signal and a second control signal according to the delayed control signal so as to control the switching tube.
The first protection module 21 clamps the peak voltage of the input voltage at a clamping voltage VH (for example, VH is 12V), so as to clamp the peak voltage for the first time, and avoid the peak voltage from being too high.
The second protection module 22 further clamps the clamping voltage output by the first protection module 21 to obtain a second voltage, and the second voltage is lower than (about 10V) of the breakdown voltage VBV (e.g. 6V) of the battery protection chip to prevent the breakdown of the post-stage circuit, thereby effectively protecting the anti-spike voltage capability of the chip without increasing any extra power consumption and improving the reliability of the chip.
The battery detection module 11 includes an over-discharge protection circuit and an over-charge protection circuit for detecting the battery voltage, and compares different reference voltages with the second voltage to perform discharge over-current protection, short-circuit protection and charge over-current protection on the chip, for example, when the second voltage is greater than the upper limit protection voltage, the output terminal turns off the control signal to control the circuit to be turned off.
The delay module 12 delays an output signal of the battery detection module 11, an output of the delay module 12 is used as an input of the logic control module 13, and the output of the delay module 13 outputs control signals DO and CO after being processed by the logic control module 13, and the control signals DO and CO realize protection of battery charging and discharging by controlling an external switching tube.
As for the first protection module 21, as a first embodiment, as shown in fig. 3, the first protection module 21 includes a MOS transistor Q1, a drain of the MOS transistor Q1 is a first end of the first protection module 21, and a gate and a source of the MOS transistor Q1 are connected in common to form a second end of the first protection module 21.
In fig. 3, the MOS transistor Q1 is a 12V high-voltage transistor, and the trigger voltage of the TLP curve is generally 15V, that is, when the peak voltage of VDD exceeds 15V, the MOS transistor Q1 starts to work in the negative resistance process of the TLP curve, and then clamps the VDD voltage to about VH (about 13V).
As a second embodiment, as shown in fig. 4, the first protection module 21 includes a MOS transistor Q2 and a MOS transistor Q3, a drain of the MOS transistor Q2 is a first end of the first protection module 21, a gate and a source of the MOS transistor Q2 are connected to a drain of the MOS transistor Q2, and a gate and a source of the MOS transistor Q3 are connected to a common end to form a second end of the first protection module 21.
The first protection module in fig. 4 is formed by connecting two ESD transistors of 5V in series, the trigger voltage of the TLP curve is generally 12V, when the peak voltage of VDD exceeds 12V, the MOS transistor Q1 and the MOS transistor Q2 start to operate in a negative resistance process, and then the peak voltage of VDD is clamped around VH (about 11V).
The second protection module 22 further clamps the clamping voltage output by the first protection module 21 to obtain a second voltage, and the second voltage is lower than (about 10V) of the breakdown voltage VBV (e.g. 6V) of the battery protection chip to prevent the breakdown of the post-stage circuit, thereby effectively protecting the anti-spike voltage capability of the chip without increasing any extra power consumption and improving the reliability of the chip.
As an embodiment of the second protection module 22, as shown in fig. 5, the second protection module 22 includes a resistor R1 and a MOS transistor Q4, a first end of the resistor R1 is a first end of the second protection module 22, a first end of the resistor R1 is commonly connected to a drain of the MOS transistor Q4 and forms a second end of the second protection module 22, and a gate and a source of the MOS transistor Q4 are commonly connected to form a third end of the second protection module 22.
Wherein, the resistor R1 is used for current limiting, the MOS transistor Q4 is used for clamping, since the first protection circuit has clamped the peak voltage of VDD around VH, the MOS transistor Q4 can use a common 5V NMOS transistor, the clamping voltage of which is generally around 6V, so the VDD0 voltage is clamped around 6V, and the current I flowing through the resistor R1 is (VDD-VDD0)/R1, where VDD is the voltage clamped by the first protection module 21, VDD0 is the voltage clamped by the second protection module 22, and the voltage value must be lower than the breakdown voltage VBV (about 10V) of the 5V CMOS transistor, so the width-length ratio of the MOS transistor Q4 is only needed to be selected reasonably, so that the current flowing after the negative resistance process is greater than I, VDD0 can be clamped around 6V and is much lower than the breakdown voltage V (about 10V) of the post-stage circuit connected to the second protection module 22, therefore, even if the VDD end has very high peak voltage, the chip can not be damaged after passing through the two-stage protection circuit.
The embodiment of the invention provides a battery protection chip, a protection circuit comprises a first protection module 21, a second protection module 22, a battery detection module 11, a time delay module 12, a logic control module 13 and a substrate switching module 14, wherein the first protection module 21 is used for clamping an input voltage to obtain a first voltage, the second protection module 22 is used for clamping the first voltage to obtain a second voltage and outputting the second voltage to the battery protection chip, and the battery detection module 11 compares the second voltage with a preset voltage and outputs a control signal comprising a comparison result; the delay module 12 is used for delaying the control signal; the logic control module 13 outputs a first control signal and a second control signal according to the delayed control signal to control the switching tube; according to the invention, the first protection module 21 and the second protection module 22 are arranged, so that the over-high peak voltage is clamped below the breakdown voltage of the chip process, the chip is not damaged by the peak voltage under the condition of not increasing extra power consumption and cost, the reliability of the chip is improved, and the problem that the area and the cost of the chip are increased by adopting a high-voltage process to avoid the breakdown of the chip by the peak voltage in the prior art is solved.
An embodiment of the present invention provides a battery protection chip, as shown in fig. 6, the battery protection chip includes:
a first protection module 21, a first end of which is connected to the power input end and a second end of which is connected to the ground end, for clamping the input voltage to obtain a first voltage;
a first end of the second protection module 22 is connected to the power input end and the first end of the first protection module 21, a second end is a voltage output end, and a third end is connected to a ground end, and is used for clamping the first voltage to obtain a second voltage;
a battery detection module 11, an input end of which is connected to a second end of the second protection module 22, for comparing the second voltage with a preset voltage and outputting a control signal including a comparison result;
a delay module 12, the input end of which is connected to the output end of the battery detection module 11, for delaying the control signal;
a logic control module 13, an input end of which is connected to the output end of the delay module 12, and configured to output a first control signal and a second control signal according to the delayed control signal;
the substrate switching module 14 and the charge-discharge control switch tube M1 have input ends connected to the first output end of the logic control module 13, and output ends connected to the substrate of the charge-discharge control switch tube M1, and are configured to receive the first control signal and select the substrate of the charge-discharge control switch tube M1 according to the first control signal;
and the input end of the grid control module 15 is connected with the second output end of the logic control module 13, and the output end of the grid control module is connected with the grid of the charge and discharge control switch tube, and the grid control module is used for receiving a second control signal and controlling the charge and discharge control switch tube to be switched on or switched off according to the second control signal.
The first protection module 21 clamps the peak voltage of the input voltage at a clamping voltage VH (for example, VH is 12V), so as to clamp the peak voltage for the first time, and avoid the peak voltage from being too high.
The second protection module 22 further clamps the clamping voltage output by the first protection module 21 to obtain a second voltage, and the second voltage is lower than (about 10V) of the breakdown voltage VBV (e.g. 6V) of the battery protection chip to prevent the breakdown of the post-stage circuit, thereby effectively protecting the anti-spike voltage capability of the chip without increasing any extra power consumption and improving the reliability of the chip.
The battery detection module 11 includes an over-discharge protection circuit and an over-charge protection circuit for detecting the battery voltage, and a discharge over-current protection, a short-circuit protection and a charge over-current protection circuit for comparing different reference voltages with the second voltage, for example, when the second voltage is greater than the upper limit protection voltage, the control circuit is turned off by the output-end turn-off control signal.
The delay module 12 delays an output signal of the battery detection module, an output of the delay module is used as an input of the logic control module 13, and the output signals are processed by the logic control module 13 to output control signals DO and CO.
The substrate switching module 14 determines the substrate selection of the charge/discharge control switch M1 through the substrate switching circuit.
The gate control module 15 determines the on/off state of the charge/discharge control switch M1, and outputs a high level or a low level to the charge/discharge control switch to control the charge/discharge control switch M1 to turn on or off.
The third embodiment is different from the second embodiment in that a substrate switching module 14 and a gate control module 15 are added, so that accurate control of the charge and discharge control switch tube is realized.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several equivalent substitutions or obvious modifications, which are equivalent in performance or use, without departing from the inventive concept, should be considered as falling within the scope of the invention as determined by the appended claims.

Claims (10)

1. A protection circuit of a battery protection chip, the protection circuit comprising:
the first protection module is connected with the power supply input end at a first end and connected with the grounding end at a second end, and is used for clamping the input voltage to obtain a first voltage;
and the first end of the second protection module is connected with the power input end and the first end of the first protection module, the second end of the second protection module is connected with the battery detection module of the battery protection chip, and the third end of the second protection module is connected with the grounding end and used for obtaining second voltage after the first voltage is clamped, and outputting the second voltage to the battery detection module.
2. The protection circuit of claim 1, wherein the first protection module comprises a MOS transistor Q1, a drain of the MOS transistor Q1 is a first terminal of the first protection module, and a gate and a source of the MOS transistor Q1 are connected in common to form a second terminal of the first protection module.
3. The protection circuit of claim 1, wherein the first protection module comprises a MOS transistor Q2 and a MOS transistor Q3, a drain of the MOS transistor Q2 is a first end of the first protection module, a gate and a source of the MOS transistor Q2 are connected in common and then connected to the drain of the MOS transistor Q2, and a gate and a source of the MOS transistor Q3 are connected in common and then form a second end of the first protection module.
4. The protection circuit of claim 1, wherein the second protection module comprises a resistor R1 and a MOS transistor Q4, the first terminal of the resistor R1 is the first terminal of the second protection module, the first terminal of the resistor R1 is connected to the drain of the MOS transistor Q4 to form the second terminal of the second protection module, and the gate and the source of the MOS transistor Q4 are connected to form the third terminal of the second protection module.
5. A battery protection chip, comprising:
the first protection module is connected with the power supply input end at a first end and connected with the grounding end at a second end, and is used for clamping the input voltage to obtain a first voltage;
the first end of the second protection module is connected with a power supply input end and the first end of the first protection module, the second end is a voltage output end, and the third end is connected with a grounding end and is used for clamping the first voltage to obtain a second voltage;
the input end of the battery detection module is connected with the second end of the second protection module and used for comparing the second voltage with a preset voltage and outputting a control signal comprising a comparison result;
the input end of the delay module is connected with the output end of the battery detection module and is used for delaying the control signal;
and the input end of the logic control module is connected with the output end of the delay module, the first output end of the logic control module is connected with the substrate of the switching tube, and the second output end of the logic control module is connected with the grid electrode of the switching tube and is used for outputting a first control signal and a second control signal according to the delayed control signal so as to control the switching tube.
6. The battery protection chip of claim 5, wherein the first protection module comprises a MOS transistor Q1, a drain of the MOS transistor Q1 is a first terminal of the first protection module, and a gate and a source of the MOS transistor Q1 are connected in common to form a second terminal of the first protection module.
7. The battery protection chip of claim 5, wherein the first protection module comprises a MOS transistor Q2 and a MOS transistor Q3, a drain of the MOS transistor Q2 is a first end of the first protection module, a gate and a source of the MOS transistor Q2 are connected in common and then connected to the drain of the MOS transistor Q2, and a gate and a source of the MOS transistor Q3 are connected in common and then form a second end of the first protection module.
8. The battery protection chip of claim 5, wherein the second protection module comprises a resistor R1 and a MOS transistor Q4, the first terminal of the resistor R1 is the first terminal of the second protection module, the first terminal of the resistor R1 is connected to the drain of the MOS transistor Q4 to form the second terminal of the second protection module, and the gate and the source of the MOS transistor Q4 are connected to form the third terminal of the second protection module.
9. A battery protection chip, comprising:
the first protection module is connected with the power supply input end at a first end and connected with the grounding end at a second end, and is used for clamping the input voltage to obtain a first voltage;
the first end of the second protection module is connected with a power supply input end and the first end of the first protection module, the second end is a voltage output end, and the third end is connected with a grounding end and is used for clamping the first voltage to obtain a second voltage;
the input end of the battery detection module is connected with the second end of the second protection module and used for comparing the second voltage with a preset voltage and outputting a control signal comprising a comparison result;
the input end of the delay module is connected with the output end of the battery detection module and is used for delaying the control signal;
the input end of the logic control module is connected with the output end of the delay module and used for outputting a first control signal and a second control signal according to the delayed control signal;
the input end of the substrate switching module is connected with the first output end of the logic control module, the output end of the substrate switching module is connected with the substrate of the charge-discharge control switch tube, and the substrate switching module is used for receiving the first control signal and selecting the substrate of the charge-discharge control switch tube according to the first control signal;
and the input end of the grid control module is connected with the second output end of the logic control module, and the output end of the grid control module is connected with the grid of the charge and discharge control switch tube and is used for receiving the second control signal and controlling the charge and discharge control switch tube to be switched on or switched off according to the second control signal.
10. The battery protection chip of claim 9, wherein the first protection module comprises a MOS transistor Q1, a drain of the MOS transistor Q1 is a first terminal of the first protection module, and a gate and a source of the MOS transistor Q1 are connected in common to form a second terminal of the first protection module.
CN202011532731.2A 2020-12-22 2020-12-22 Battery protection chip and protection circuit thereof Pending CN112769113A (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN116799766A (en) * 2023-08-24 2023-09-22 禹创半导体(深圳)有限公司 Protection circuit for detecting load during cascade application of battery protection chips

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CN1132937A (en) * 1995-04-06 1996-10-09 财团法人工业技术研究院 Electrostatic discharge protection circuit for integrated circuit
CN102544001A (en) * 2012-03-15 2012-07-04 电子科技大学 SCR (Silicon Controlled Rectifier) structure for providing ESD ( Electro-Static discharge) protection for I/O (Input/Output) port of integrated circuit under all modes
CN104681543A (en) * 2013-12-03 2015-06-03 上海北京大学微电子研究院 Encapsulating structure with clamping and ESD (Electro-Static Discharge) protection
CN205016998U (en) * 2015-07-28 2016-02-03 无锡中感微电子股份有限公司 Battery protection chip and battery
CN207503987U (en) * 2017-10-10 2018-06-15 深圳市富满电子集团股份有限公司 A kind of transverse direction PMOS tube and transverse direction PMOS chips
CN109217276A (en) * 2018-10-19 2019-01-15 南京慧感电子科技有限公司 A kind of voltage clamping and esd protection circuit
CN109449891A (en) * 2018-11-06 2019-03-08 苏州赛芯电子科技有限公司 Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability
CN110021976A (en) * 2019-03-18 2019-07-16 深圳市稳先微电子有限公司 A kind of overcharged voltage protection detection circuit and system
CN214755515U (en) * 2020-12-22 2021-11-16 深圳市创芯微微电子有限公司 Battery protection chip and protection circuit thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1132937A (en) * 1995-04-06 1996-10-09 财团法人工业技术研究院 Electrostatic discharge protection circuit for integrated circuit
CN102544001A (en) * 2012-03-15 2012-07-04 电子科技大学 SCR (Silicon Controlled Rectifier) structure for providing ESD ( Electro-Static discharge) protection for I/O (Input/Output) port of integrated circuit under all modes
CN104681543A (en) * 2013-12-03 2015-06-03 上海北京大学微电子研究院 Encapsulating structure with clamping and ESD (Electro-Static Discharge) protection
CN205016998U (en) * 2015-07-28 2016-02-03 无锡中感微电子股份有限公司 Battery protection chip and battery
CN207503987U (en) * 2017-10-10 2018-06-15 深圳市富满电子集团股份有限公司 A kind of transverse direction PMOS tube and transverse direction PMOS chips
CN109217276A (en) * 2018-10-19 2019-01-15 南京慧感电子科技有限公司 A kind of voltage clamping and esd protection circuit
CN109449891A (en) * 2018-11-06 2019-03-08 苏州赛芯电子科技有限公司 Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability
CN110021976A (en) * 2019-03-18 2019-07-16 深圳市稳先微电子有限公司 A kind of overcharged voltage protection detection circuit and system
CN214755515U (en) * 2020-12-22 2021-11-16 深圳市创芯微微电子有限公司 Battery protection chip and protection circuit thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116799766A (en) * 2023-08-24 2023-09-22 禹创半导体(深圳)有限公司 Protection circuit for detecting load during cascade application of battery protection chips
CN116799766B (en) * 2023-08-24 2023-12-12 禹创半导体(深圳)有限公司 Protection circuit for detecting load during cascade application of battery protection chips

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