WO2022057548A1 - Circuit de protection de batterie - Google Patents

Circuit de protection de batterie Download PDF

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Publication number
WO2022057548A1
WO2022057548A1 PCT/CN2021/112960 CN2021112960W WO2022057548A1 WO 2022057548 A1 WO2022057548 A1 WO 2022057548A1 CN 2021112960 W CN2021112960 W CN 2021112960W WO 2022057548 A1 WO2022057548 A1 WO 2022057548A1
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WO
WIPO (PCT)
Prior art keywords
circuit
substrate
signal
gate
switch tube
Prior art date
Application number
PCT/CN2021/112960
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English (en)
Chinese (zh)
Inventor
李�杰
白青刚
杨小华
Original Assignee
深圳市创芯微微电子有限公司
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Publication of WO2022057548A1 publication Critical patent/WO2022057548A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/18—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00302—Overcharge protection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00306—Overdischarge protection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0036—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using connection detecting circuits

Definitions

  • the present application relates to the field of electronic technology, and in particular, to a battery protection circuit.
  • the existing battery protection chip includes an over-discharge protection circuit and an over-charge protection circuit for detecting the battery voltage, a discharge over-current protection circuit, a charging over-current protection and a short-circuit protection circuit for detecting the loop current, and a charging and discharging switch tube.
  • the on-off switch tube control module realizes the protection of battery charging and discharging.
  • the switching tubes in the existing battery protection chips mainly use low-voltage MOS tubes, and the withstand voltage of the device is about 10V. The tube is damaged, so that the battery protection chip cannot work normally. Replacing the switch tube with a high-voltage tube will greatly increase the chip area and cost.
  • the present application provides a battery protection circuit to solve the problems that the existing battery protection circuit is easily broken down when using a low-voltage switch tube and damages the chip, and increases the chip area and cost when using a high-voltage switch tube
  • a battery protection circuit comprising:
  • Reference and bias circuit voltage protection circuit, current protection circuit, delay circuit, switch control circuit, switch and clamp circuit;
  • the first end of the voltage protection circuit is connected to the power supply voltage sampling point, and the second end is connected to the first end of the delay circuit;
  • the first end of the current protection circuit is connected to the loop current sampling point, and the second end is connected to the second end of the delay circuit;
  • the second end of the delay circuit is connected to the first end of the switch control circuit
  • the second end of the switch tube control circuit is connected to the gate of the switch tube
  • the source and drain of the switch tube are connected in series in the charging and discharging loop between the battery and the charging power source or the load;
  • the first end of the clamping circuit is connected to the power supply voltage sampling point, the second end is connected to the ground with the negative electrode of the battery, and the third end is connected to the loop current sampling point;
  • the loop current sampling point is located at the negative pole of the charging power supply or the load side;
  • the reference and bias circuits are connected to the power supply voltage sampling point
  • the reference and bias circuits are used to generate the bias voltage required by the voltage protection circuit and the bias current required by the current protection circuit;
  • the voltage protection circuit is used to detect the power supply voltage, and when the power supply voltage is abnormal generating a detection inversion signal;
  • the current protection circuit is used for detecting charging current and discharging current, and generating a detection inversion signal when the charging current and discharging current are abnormal;
  • the delay circuit is used for delaying the detection inversion signal processing;
  • the switch tube control circuit is used to generate a control signal according to the output signal of the delay circuit, and send the control signal to the switch tube to control the start or close of the switch tube;
  • the clamp circuit is used to The loop current sampling point is clamped when a negative high voltage occurs at the loop current sampling point.
  • the voltage drop between the second end and the third end of the clamp circuit is less than the source-drain breakdown voltage of the switch tube.
  • the clamping circuit includes an NMOS transistor and a diode string group, and the diode string group includes a plurality of diodes connected in series;
  • the drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the diode string group;
  • the cathode of the diode string is connected to the loop current sampling point.
  • the sum of the threshold voltage of the NMOS transistor and the turn-on voltages of the plurality of diodes is less than the source-drain breakdown voltage of the switching transistor.
  • the clamping circuit includes an NMOS transistor string group, and the NMOS transistor string group includes several NMOS transistors connected in series;
  • each NMOS transistor is connected to the common junction between the drain and the gate of the next NMOS transistor;
  • the drain of the first NMOS transistor is connected to the power supply voltage sampling point, and the gate is connected to the ground with the negative electrode of the battery;
  • the source of the last NMOS transistor is connected to the loop current sampling point.
  • the sum of the threshold voltages of the several NMOS transistors is less than the source-drain breakdown voltage of the switching transistors.
  • the clamping circuit includes an NMOS transistor and a PMOS transistor string group, and the PMOS transistor string group includes a plurality of PMOS transistors connected in series;
  • the drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS tube in the PMOS tube string group;
  • the common junction between the gate and drain of each PMOS transistor is connected to the source of the next PMOS transistor, and the common junction between the gate and drain of the last PMOS transistor is connected to The loop current sampling point is connected.
  • the sum of the threshold voltage of the NMOS transistor and the threshold voltages of the several PMOS transistors is less than the source-drain breakdown voltage of the switch transistor.
  • the switch tube control circuit includes a logic circuit, a substrate switching circuit, and a gate control circuit;
  • the input end of the logic circuit is connected to the second end of the delay circuit, the first output end is connected to the first end of the substrate switching circuit, and the second output end is connected to the first end of the gate control circuit end connection;
  • the second end of the substrate switching circuit is connected to the substrate of the switch tube;
  • the output end of the gate control circuit is connected to the gate of the switch tube
  • the logic circuit is used to perform logic processing on the output signal of the delay circuit, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit, generate a control signal, and send the control signal to the substrate switching circuit.
  • a signal is sent to the gate control circuit; the substrate switching circuit is used for switching the substrate polarity of the switch tube according to the substrate switching signal; the gate control circuit is used for outputting according to the control signal
  • the gate control signal is sent to the switch tube to control the startup or shutdown of the gate of the switch tube.
  • the switch tube is an isolated MOSFET.
  • the switch tube is a non-isolated MOSFET.
  • a clamp circuit is added to the existing battery protection circuit.
  • the first end of the clamp circuit is connected to the power supply voltage sampling point, and the second end is connected to the ground with the negative electrode of the battery.
  • the third end is connected to the loop current sampling point, and the loop current sampling point is located at the negative pole of the charging power supply or the load side.
  • FIG. 1 is a schematic diagram of a battery protection circuit provided by an embodiment of the present application
  • FIG. 2 is a schematic diagram of a switch tube in a battery protection circuit provided by an embodiment of the present application
  • FIG. 3 is a schematic diagram of a clamp circuit in a battery protection circuit provided by an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a clamp circuit in a battery protection circuit provided by another embodiment of the present application.
  • FIG. 5 is a schematic diagram of a clamp circuit in a battery protection circuit provided by another embodiment of the present application.
  • FIG. 6 is an application schematic diagram of a battery protection circuit provided by another embodiment of the present application.
  • a clamp circuit is added to the existing battery protection circuit.
  • the first end of the clamp circuit is connected to the power supply voltage sampling point, and the second end is connected to the ground with the negative electrode of the battery.
  • the third end is connected to the loop current sampling point, and the loop current sampling point is located at the negative pole of the charging power supply or the load side.
  • FIG. 1 is a schematic diagram of a battery protection circuit provided by an embodiment of the present application.
  • the battery protection circuit 1 includes a reference and bias circuit 10 , a voltage protection circuit 20 , a current protection circuit 30 , a delay circuit 40 , a switch control circuit 50 , a switch 60 and a clamp circuit 70 ;
  • the first end of the voltage protection circuit 20 is connected to the power supply voltage sampling point VDD, and the second end is connected to the first end of the delay circuit 40;
  • the first end of the current protection circuit 30 is connected to the loop current sampling point VM, and the second end is connected to the second end of the delay circuit 40;
  • the second end of the delay circuit 40 is connected to the first end of the switch control circuit 50;
  • the second end of the switch tube control circuit 50 is connected to the gate of the switch tube 60;
  • the source and drain of the switch tube 60 are connected in series in the charging and discharging loop between the battery and the charging power source or load;
  • the first end of the clamping circuit 70 is connected to the power supply voltage sampling point VDD, the second end and the negative electrode of the battery are connected to the ground VSS, and the third end is connected to the loop current sampling point VM;
  • the loop current sampling point VM is located at the negative pole of the charging power supply or the load side;
  • the reference and bias circuit 10 is connected to the power supply voltage sampling point VDD;
  • the reference and bias circuit 10 is used to generate the bias voltage required by the voltage protection circuit 20 and the bias current required by the current protection circuit 30; the voltage protection circuit 20 is used to detect the power supply voltage, and A detection inversion signal is generated when the voltage is abnormal; the current protection circuit 30 is used to detect the charging current and the discharging current, and generate a detection inversion signal when the charging current and the discharging current are abnormal; the delay circuit 40 is used for the The inversion signal is detected for delay processing; the switch control circuit 50 is used to generate a control signal according to the output signal of the delay circuit 40 , and send the control signal to the switch 60 to control the start of the switch 60 or off; the clamping circuit 70 is configured to perform clamping processing on the loop current sampling point VM when a negative high voltage occurs at the loop current sampling point VM.
  • the reference and bias circuit 10 is connected to the power supply voltage sampling point VDD.
  • the power supply voltage sampling point VDD is the voltage sampling point of the positive pole of the power supply of the battery protection chip.
  • the power supply voltage sampling point VDD is the voltage sampling point after the positive electrode of the battery passes through a preset resistance, such as VDD as shown in FIG. 1 .
  • the loop current sampling point VM is the current sampling point of the charging and discharging loop between the battery and the charging power source or the load. As shown in FIG. 1, VM is set at the negative electrode of the charging power source or the load side.
  • the reference and bias circuit 10 obtains a voltage sample value of the chip power supply from the power supply voltage sample point VDD, and then generates a bias voltage and a bias current according to the voltage sample value.
  • the bias voltage is the detection threshold of the voltage protection circuit 20
  • the bias current is the detection threshold of the current protection circuit 30 .
  • the voltage protection circuit 20 When the voltage protection circuit 20 is enabled, the power supply voltage is detected, and the power supply voltage is compared with the bias voltage to determine whether the battery is abnormally over-discharged or over-charged. When the power supply voltage is abnormal A detection toggle signal is generated. When the current protection circuit 30 is enabled, the charging current and the discharging current are detected, and the charging current and the discharging current are respectively compared with the corresponding bias current to judge whether the circuit is abnormally over-discharged, over-charged or short-circuited. And a detection inversion signal is generated when the charging current and the discharging current are abnormal.
  • the delay circuit 40 performs delay processing on the detection inversion signal sent by the voltage protection circuit 20 or the current protection circuit 30 , and outputs the delayed detection inversion signal to the switch control circuit 50 .
  • the switch control circuit 50 performs logic processing on the output signal of the delay circuit 40 to generate a control signal for the switch 60 .
  • the control signal is a switch signal of the switch tube 60 to control the start or stop of the switch tube 60 .
  • the switch tube 60 is connected in series in the charging and discharging circuit between the battery and the charging power source or the load, and by controlling the start or shutdown of the switch tube 60, the voltage overcharge or overdischarge, loop overdischarge or overcharge or short circuit can be realized. Protect.
  • the clamping circuit 70 receives power from the power supply voltage sampling point VDD, detects the voltage information of the loop current sampling point VM, and clamps the loop current sampling point VM when a negative high voltage occurs at the loop current sampling point VM. bit processing.
  • the voltage drop between the second terminal and the third terminal is smaller than the source-drain breakdown voltage of the switch tube 60 . Since the second terminal of the clamping circuit 70 and the negative electrode of the battery are connected to the ground VSS, the absolute value of the voltage of the third terminal in the clamping circuit 70 is the voltage of the loop current sampling point VM. The absolute value is smaller than the breakdown voltage between the source electrode and the drain electrode of the switch tube 60, thereby preventing the source electrode and the drain electrode of the switch tube 60 from being broken down.
  • a 5V low-voltage switch tube is used as an example for description below.
  • the breakdown voltage VDS between the source and drain of the switch tube 60 is about 10V, and the battery voltage is 4V.
  • the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery, and the clamping circuit 70 does not work at this time.
  • a high-voltage charger such as a 20V charger
  • the battery voltage is 4V
  • the voltage on the loop current sampling point VM is -16V high voltage.
  • the three poles of the switch tube 60 The potential is shown in Figure 2, where VSS represents the drain, VM represents the source, and SW represents the gate.
  • the voltage difference between the drain and the source of the switch tube 60 is 16V, which is greater than the breakdown voltage VDS between the source and drain electrodes, and the switch tube 60 will be broken down and burned without the clamping circuit 70 , the battery protection chip fails.
  • the negative voltage of the loop current sampling point VM is clamped, so that the absolute value of the negative voltage of the loop current sampling point VM is less than
  • the breakdown voltage between the source and drain of the switch tube 60 is clamped to -4V, for example, and the voltage difference between the drain and the source of the switch tube 60 is 4V, which is much smaller than the difference between the source and the drain.
  • the switch 60 will not be damaged due to breakdown, and the battery protection chip can still work normally.
  • the clamp circuit 70 is used to clamp the loop current sampling point VM when a negative high voltage occurs at the loop current sampling point VM.
  • the high withstand voltage ensures the high withstand voltage and reliability of the chip while reducing the area and cost of the battery protection chip.
  • the clamping circuit 70 when the clamping circuit 70 is working, the voltage drop between the second terminal and the third terminal is less than the source-drain breakdown voltage VDS of the switching tube.
  • the clamping circuit 70 includes an NMOS transistor M1 and a diode string group, and the diode string group includes a plurality of diodes connected in series;
  • the drain of the NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the diode string;
  • the cathode of the diode string is connected to the loop current sampling point.
  • the voltage drop between the gate of the NMOS transistor M1 and the negative electrode of the diode string is less than the source-drain breakdown voltage VDS of the switching transistor.
  • the number of diodes in the diode string can be set according to the actual value of the source-drain breakdown voltage VDS of the switch, as long as the threshold voltage of the NMOS transistor and the turn-on voltage of the diodes are satisfied. and less than the source-drain breakdown voltage of the switch.
  • the breakdown voltage VDS between the source and drain of the switch is about 10V, and the battery voltage is 4V.
  • the diode string group includes three diodes connected in series, they are denoted as a first diode D1 , a second diode D2 , and a third diode D3 .
  • the drain of the NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the positive electrode of the first diode D1; the first The cathode of the diode D1 is connected to the anode of the second diode D2, the cathode of the second diode D2 is connected to the anode of the third diode D3, and the third diode D3
  • the negative pole of is connected to the loop current sampling point VM.
  • the turn-on voltages of the NMOS transistor M1, the first diode D1, the second diode D2, and the third diode D3 are all 1V, 4V in total.
  • the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery.
  • VSS-4V -4V
  • VM ⁇ VSS-4V the NMOS in the clamping circuit 70
  • the tube M1 and the diode string are turned on, and after the turn-on, the voltage of the loop current sampling point VM is forcibly pulled up to -4V, so that the voltage difference between the drain and the source of the switch tube is 4V, It is much smaller than the breakdown voltage VDS between the source and drain, which avoids the damage of the switch tube 60 .
  • VDS breakdown voltage
  • the clamping circuit 70 includes an NMOS transistor string group, and the NMOS transistor string group includes a plurality of NMOS transistors connected in series;
  • each NMOS transistor is connected to the common junction between the drain and the gate of the next NMOS transistor;
  • the drain of the first NMOS transistor is connected to the sampling point of the power supply voltage, and the gate is connected to the ground with the negative electrode of the battery.
  • the source of the last NMOS transistor is connected to the loop current sampling point.
  • the voltage drop between the gate of the first NMOS transistor and the source of the last NMOS transistor is less than the source-drain breakdown voltage VDS of the switching transistor.
  • the number of NMOS transistors in the NMOS transistor string group can be set according to the actual value of the source-drain breakdown voltage VDS of the switching transistors, as long as the sum of the threshold voltages of the NMOS transistors is less than the source of the switching transistors. leakage breakdown voltage.
  • the NMOS transistor string group includes four NMOS transistors connected in series, they are denoted as a first NMOS transistor M1 , a second NMOS transistor M2 , a third NMOS transistor M3 , and a fourth NMOS transistor M4 .
  • the drain of the first NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the drain and the gate of the second NMOS transistor M2.
  • the source of the second NMOS transistor M2 is connected to the common contact between the drain and the gate of the third NMOS transistor M3; the source of the third NMOS transistor M3 is connected to the The common contact between the drain and the gate of the fourth NMOS transistor M4 is connected; the source of the fourth NMOS transistor M4 is connected to the loop current sampling point VM.
  • the threshold voltages of the first NMOS transistor M1, the second NMOS transistor M2, the third NMOS transistor M3, and the fourth NMOS transistor M4 are all 1V, 4V in total.
  • the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery, at this time VM>VSS-4V, the first NMOS transistor M1 and the second NMOS transistor in the clamping circuit 70
  • the NMOS transistor M2, the third NMOS transistor M3, and the fourth NMOS transistor M4 are all non-conductive.
  • An NMOS transistor M1, a second NMOS transistor M2, a third NMOS transistor M3, and a fourth NMOS transistor M4 are turned on, and after they are turned on, the voltage of the loop current sampling point VM is forcibly pulled up to -4V, so that the The voltage difference between the drain electrode and the source electrode of the switch tube is 4V, which is much smaller than the breakdown voltage VDS between the source and drain electrodes, which avoids the damage of the switch tube 60 .
  • the above-mentioned number of NMOS transistors is only a preferred example of the present application, and can be specifically set according to actual conditions.
  • the clamping circuit 70 includes an NMOS transistor and a PMOS transistor string group, and the PMOS transistor string group includes a plurality of PMOS transistors connected in series;
  • the drain of the NMOS tube is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS tube in the PMOS tube string group;
  • the common junction between the gate and drain of each PMOS transistor is connected to the source of the next PMOS transistor, and the common junction between the gate and drain of the last PMOS transistor is connected to The loop current sampling point is connected.
  • the voltage drop between the gate of the NMOS transistor and the common junction of the gate and drain of the last PMOS transistor is less than the source-drain breakdown voltage VDS of the switch.
  • the number of PMOS transistors in the PMOS transistor string group can be set according to the actual value of the source-drain breakdown voltage VDS of the switching transistors, as long as the threshold voltage of the NMOS transistors and the threshold value of the several PMOS transistors are satisfied. The sum of the voltages is less than the source-drain breakdown voltage of the switch tube.
  • the clamping circuit 70 includes an NMOS transistor M1 and a PMOS transistor string group. If the PMOS transistor string group includes three PMOS transistors connected in series, they are denoted as the first PMOS transistor M2 and the second PMOS transistor. The PMOS transistor M3 and the third PMOS transistor M4.
  • the drain of the NMOS transistor M1 is connected to the power supply voltage sampling point, the gate is connected to the ground with the negative electrode of the battery, and the source is connected to the source of the first PMOS transistor M2; the first The common junction between the gate and the drain of the PMOS transistor M2 is connected to the source of the second PMOS transistor M3; the common junction between the gate and the drain of the second PMOS transistor M3 is connected to the third The source of the PMOS transistor M4 is connected; the common junction between the gate and the drain of the third PMOS transistor M4 is connected to the loop current sampling point.
  • the threshold voltages of the NMOS transistor M1, the first PMOS transistor M2, the second PMOS transistor M3, and the third PMOS transistor M4 are all 1V, 4V in total.
  • the potential on the loop current sampling point VM is close to the voltage VSS of the negative electrode of the battery, at this time VM>VSS-4V, the NMOS transistor M1 and the first PMOS transistor in the clamping circuit 70 M2, the second PMOS transistor M3, and the third PMOS transistor M4 are all non-conductive.
  • VSS-4V -4V
  • VM ⁇ VSS-4V the NMOS in the clamping circuit 70
  • the transistor M1, the first PMOS transistor M2, the second PMOS transistor M3, and the third PMOS transistor M4 are turned on, and after they are turned on, the voltage of the loop current sampling point VM is forcibly pulled up to -4V, thereby making the switching transistor
  • the voltage difference between the drain and the source is 4V, which is much smaller than the breakdown voltage VDS between the source and the drain, which avoids damage to the switch tube 60 .
  • the above-mentioned number of PMOS transistors is only a preferred example of the present application, and can be specifically set according to actual conditions.
  • the source and drain of the switch tube 60 are symmetrical.
  • the substrate switching signal and the control signal output by the switch tube control circuit 50 are used to instruct the switch tube 60 to be turned on or off.
  • FIG. 6 a schematic diagram of the application of the battery protection circuit provided in this embodiment is shown. After the battery passes through the preset resistor R4 and the preset capacitor C1, the power supply voltage VDD is provided to the battery protection circuit.
  • the switch control circuit 50 includes a logic circuit 51, a substrate switching circuit 52, and a gate control circuit 53;
  • the input end of the logic circuit 51 is connected to the second end of the delay circuit 40, the first output end is connected to the first end of the substrate switching circuit 52, and the second output end is connected to the gate control circuit The first end of 53 is connected;
  • the second end of the substrate switching circuit 52 is connected to the substrate of the switch tube;
  • the output end of the gate control circuit 53 is connected to the gate of the switch tube
  • the logic circuit 51 is used to perform logic processing on the output signal of the delay circuit 40, generate a substrate switching signal, send the substrate switching signal to the substrate switching circuit 52, and generate a control signal, and send the substrate switching signal to the substrate switching circuit 52.
  • the control signal is sent to the gate control circuit 53;
  • the substrate switching circuit 52 is used to switch the substrate polarity of the switch tube 60 according to the substrate switching signal;
  • the gate control circuit 53 uses The gate control signal is output to the switch tube 60 according to the control signal, so as to control the activation or shutdown of the gate of the switch tube 60 .
  • the logic circuit 51 after receiving the output signal of the delay circuit 40, the logic circuit 51 performs logic processing on the output signal, generates a substrate switching signal and sends it to the substrate switching circuit 52, and generates a control signal and sends it to the substrate switching circuit 52. sent to the gate control circuit 53 .
  • the substrate switching circuit 52 switches the substrate polarity of the switching transistor 60 according to the substrate switching signal, so as to select the switching transistor 60 as an N-type substrate or a P-type substrate.
  • the gate control circuit 53 controls the activation or deactivation of the gate of the switch tube 60 according to the control signal, so as to realize the protection of the charging and discharging of the battery.
  • the voltage protection circuit 20 includes a first resistor R1, a second resistor R2, a third resistor R3, an overdischarge protection circuit 21, and an overcharge protection circuit. twenty two;
  • the first end of the overdischarge protection circuit 21 is connected to the common contact between the first resistor R1 and the second resistor R2, and the second end is connected to the delay circuit 40;
  • the first end of the overcharge protection circuit 22 is connected to the common contact between the second resistor R2 and the third resistor R3, and the second end is connected to the delay circuit 40;
  • the other end of the first resistor R1 is connected to the power supply voltage sampling point; the other end of the third resistor R3 is connected to the ground with the negative electrode of the battery;
  • the over-discharge protection circuit 21 is used to obtain the power supply voltage from the power supply voltage sampling point, and when the power supply voltage is less than the first voltage threshold, send a detection inversion signal to the delay circuit 40;
  • the overcharge The protection circuit 22 is configured to obtain the power supply voltage from the power supply voltage sampling point, and send a detection inversion signal to the delay circuit 40 when the power supply voltage is greater than a second voltage threshold.
  • the first voltage threshold is a discharge protection voltage threshold, which is a criterion for judging whether the battery is over-discharged.
  • the second voltage threshold is a charging protection voltage threshold, which is a criterion for judging whether the battery is overcharged.
  • the overdischarge protection circuit 21 When the overdischarge protection circuit 21 is enabled, the power supply voltage is detected, and the power supply voltage is compared with the first voltage threshold to determine whether the battery is overdischarged, when the power supply voltage is less than the first voltage When the threshold value is reached, it is considered that the battery is over-discharged, and a detection inversion signal is generated and sent to the delay circuit 40 .
  • the overcharge protection circuit 22 When the overcharge protection circuit 22 is enabled, the power supply voltage is detected, and the power supply voltage is compared with the second voltage threshold to determine whether the battery is overcharged. When the power supply voltage is greater than the second voltage When the threshold value is reached, it is considered that the battery is over-discharged, and a detection inversion signal is generated and sent to the delay circuit 40 .
  • the current protection circuit 30 includes a discharge overcurrent protection circuit 31 , a short circuit protection circuit 32 , and a charge overcurrent protection circuit 33 ;
  • the first ends of the discharge overcurrent protection circuit 31, the short circuit protection circuit 32, and the charging overcurrent protection circuit 33 are respectively connected to the loop current sampling point;
  • the second ends of the discharge overcurrent protection circuit 31 , the short circuit protection circuit 32 and the charging overcurrent protection circuit 33 are respectively connected to the delay circuit 40 ;
  • the discharge overcurrent protection circuit 31 is used to obtain the discharge current from the loop current sampling point, and send a detection inversion signal to the delay circuit 40 when the discharge current is greater than the first current threshold;
  • the charging overcurrent The protection circuit 33 is used for obtaining the charging current from the loop current sampling point, and when the charging current is greater than the second current threshold, a detection inversion signal is sent to the delay circuit 40;
  • the loop current sampling point acquires the short-circuit voltage, and sends a detection inversion signal to the delay circuit 40 when the short-circuit voltage is greater than the short-circuit protection voltage threshold.
  • the first current threshold is the discharge protection current threshold, which is a criterion for judging whether the loop current is too large during the discharging process of the battery.
  • the second current threshold is the charging protection current threshold, which is a criterion for judging whether the loop current is too large during the battery charging process.
  • the short-circuit protection voltage threshold is a criterion for judging whether a short-circuit occurs during charging and discharging of the battery.
  • the loop current is detected.
  • the first current threshold value can be converted into the first protection voltage, and then the voltage value of the loop current sampling point VM can be obtained through the current detection resistor, and the voltage value can be compared with the first protection voltage.
  • the value is greater than the first protection voltage, it is considered that the loop current is greater than the first current threshold, and the loop current is too large during battery discharge, a detection inversion signal is generated and sent to the delay circuit 40 .
  • the loop current is detected.
  • the second current threshold value can be converted into the second protection voltage, and then the voltage value of the loop current sampling point VM can be obtained through the current detection resistor, and the voltage value can be compared with the second protection voltage.
  • the value is less than the second protection voltage, it is considered that the loop current is greater than the second current threshold, and the loop current is too large during battery charging, and a detection inversion signal is generated and sent to the delay circuit 40 .
  • the short-circuit protection circuit 32 When the short-circuit protection circuit 32 is enabled, it is detected whether the battery is short-circuited.
  • the short-circuit protection voltage threshold is preset, the voltage value of the loop current sampling point VM is obtained, and the voltage value is compared with the short-circuit protection voltage threshold. If the voltage value is smaller than the short-circuit protection voltage threshold, Then, it is considered that the battery is short-circuited, and a detection inversion signal is generated and sent to the delay circuit 40 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Electronic Switches (AREA)
  • Secondary Cells (AREA)

Abstract

La présente demande concerne un circuit de protection de batterie. Un circuit de calage est ajouté à un circuit de protection de batterie existant. Une première borne du circuit de calage est connectée à un point d'échantillonnage de tension d'alimentation électrique, une deuxième borne et une électrode négative d'une batterie sont toutes deux connectées à la masse, et une troisième borne est connectée à un point d'échantillonnage de courant de boucle. Le point d'échantillonnage de courant de boucle est situé au niveau de l'électrode négative d'une alimentation électrique de charge ou d'un côté charge. Grâce à la réception, par le circuit de calage, d'énergie électrique en provenance du point d'échantillonnage de tension d'alimentation électrique, une valeur de tension au point d'échantillonnage de courant de boucle est détectée, et un traitement de calage est effectué sur le point d'échantillonnage de courant de boucle lorsqu'une haute tension négative se produit au point d'échantillonnage de courant de boucle, ce qui permet de résoudre efficacement le problème du claquage d'un transistor de commutation basse tension par une haute tension négative entraînant l'endommagement d'une puce. La résistance à haute tension d'une puce de protection de batterie est obtenue pendant l'utilisation d'un transistor de commutation basse tension, et la superficie et les coûts d'une puce sont réduits.
PCT/CN2021/112960 2020-09-21 2021-08-17 Circuit de protection de batterie WO2022057548A1 (fr)

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CN202010995509.XA CN112152288A (zh) 2020-09-21 2020-09-21 一种电池保护电路

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116505474A (zh) * 2023-05-05 2023-07-28 无锡市稳先微电子有限公司 电池保护电路和电子设备
CN116544904A (zh) * 2023-07-04 2023-08-04 浙江大学 低压差检测防反灌保护电路、负载开关芯片及电源系统
CN116896363A (zh) * 2023-09-08 2023-10-17 成都利普芯微电子有限公司 一种nmos控制电路和电池保护芯片

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN117970169B (zh) * 2024-03-29 2024-06-21 苏州元脑智能科技有限公司 一种电源短路检测电路和检测方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180287373A1 (en) * 2017-04-04 2018-10-04 Semiconductor Components Industries, Llc Methods and apparatus for voltage and current calibration
CN109449891A (zh) * 2018-11-06 2019-03-08 苏州赛芯电子科技有限公司 提高抗尖峰电压能力的单晶圆电池保护电路及充放电电路
CN111564825A (zh) * 2020-07-09 2020-08-21 深圳市创芯微微电子有限公司 一种电池保护电路
CN112152288A (zh) * 2020-09-21 2020-12-29 深圳市创芯微微电子有限公司 一种电池保护电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102545162B (zh) * 2010-12-09 2014-06-04 无锡华润上华半导体有限公司 锂电池保护电路
CN110048476B (zh) * 2019-04-02 2023-05-16 西安稳先半导体科技有限责任公司 一种电池保护驱动电路和电池保护驱动系统
CN110244813B (zh) * 2019-07-15 2020-03-31 电子科技大学 功率器件的栅驱动电流充电电路和栅驱动控制电路
CN213402499U (zh) * 2020-09-21 2021-06-08 深圳市创芯微微电子有限公司 一种电池保护电路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180287373A1 (en) * 2017-04-04 2018-10-04 Semiconductor Components Industries, Llc Methods and apparatus for voltage and current calibration
CN109449891A (zh) * 2018-11-06 2019-03-08 苏州赛芯电子科技有限公司 提高抗尖峰电压能力的单晶圆电池保护电路及充放电电路
CN111564825A (zh) * 2020-07-09 2020-08-21 深圳市创芯微微电子有限公司 一种电池保护电路
CN112152288A (zh) * 2020-09-21 2020-12-29 深圳市创芯微微电子有限公司 一种电池保护电路

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116505474A (zh) * 2023-05-05 2023-07-28 无锡市稳先微电子有限公司 电池保护电路和电子设备
CN116505474B (zh) * 2023-05-05 2023-10-24 无锡市稳先微电子有限公司 电池保护电路和电子设备
CN116544904A (zh) * 2023-07-04 2023-08-04 浙江大学 低压差检测防反灌保护电路、负载开关芯片及电源系统
CN116544904B (zh) * 2023-07-04 2023-09-22 浙江大学 低压差检测防反灌保护电路、负载开关芯片及电源系统
CN116896363A (zh) * 2023-09-08 2023-10-17 成都利普芯微电子有限公司 一种nmos控制电路和电池保护芯片
CN116896363B (zh) * 2023-09-08 2023-12-05 成都利普芯微电子有限公司 一种nmos控制电路和电池保护芯片

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