WO2022057023A1 - 一种显示基板及显示装置 - Google Patents

一种显示基板及显示装置 Download PDF

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WO2022057023A1
WO2022057023A1 PCT/CN2020/125025 CN2020125025W WO2022057023A1 WO 2022057023 A1 WO2022057023 A1 WO 2022057023A1 CN 2020125025 W CN2020125025 W CN 2020125025W WO 2022057023 A1 WO2022057023 A1 WO 2022057023A1
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layer
insulating layer
transparent electrode
display
electrode layer
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PCT/CN2020/125025
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English (en)
French (fr)
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林建伟
杨鹏
李林
庄崇营
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信利半导体有限公司
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Publication of WO2022057023A1 publication Critical patent/WO2022057023A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • the utility model relates to the field of display technology, in particular to a display substrate and a display device.
  • the storage capacitor is a flat capacitor structure formed between the common electrode and the pixel electrode.
  • the conventional storage capacitor is formed by the common electrode of the metal material as the gate and the pixel electrode of the transparent material. If the storage capacitor needs to be increased, it is necessary to increase the storage capacitor.
  • the metal material of the large common electrode will lead to a decrease in the aperture ratio of the pixel, and because the storage capacitance is too small, it will bring a series of display defects, such as a series of display defects such as afterimage, crosstalk, and flicker.
  • Existing display substrates cannot balance pixel aperture ratio and storage capacitance.
  • the utility model discloses a display substrate and a display device, which are used to solve the problem in the prior art that when the display substrate increases the storage capacitor pixel aperture ratio, the aperture ratio is reduced.
  • the utility model adopts the following technical solutions:
  • a display substrate comprising a base substrate with a storage capacitor on the base substrate;
  • the storage capacitor includes:
  • a first insulating layer at least partially covering the base substrate
  • a transparent electrode layer at least partially covering the first insulating layer
  • the second insulating layer covers the transparent electrode layer and the first insulating layer, and has a first via hole at a position corresponding to the common electrode of the metal layer, and the first via hole penetrates the first insulating layer and the second insulating layer, the second insulating layer has a second via hole at a position corresponding to the transparent electrode layer;
  • the pixel electrode at least partially covers the second insulating layer, is connected to the common electrode of the metal layer through the first via hole, and is connected to the transparent electrode layer through the second via hole.
  • the transparent electrode layer is provided with at least one undercut.
  • the base substrate is made of glass.
  • the transparent electrode layer is made of ITO material.
  • the first insulating layer and the second insulating layer are made of silicon nitride.
  • the base substrate is also covered with a non-capacitance region, and the non-capacitance region is adjacent to the storage capacitor.
  • the present invention also provides a display device, comprising the display substrate described in any one of the above solutions.
  • Covering the transparent electrode layer on the first insulating layer increases the area of the electrode close to the substrate and increases the storage capacity of the capacitor. Since the transparent electrode layer covers the first insulating layer, the transparent electrode layer covers The insulating layer becomes thinner, which further increases the storage capacity of the capacitor. Since the transparent electrode layer is added, there can also be a common electrode in the display area, and the transmittance will not be affected.
  • FIG. 1 is a schematic diagram of the overall structure of a display substrate in the prior art
  • FIG. 2 is a schematic diagram of an overall structure of a display substrate disclosed in an embodiment of the present invention.
  • the conventional storage capacitor design is a plate capacitor formed by the metal layer common electrode 10' and the pixel electrode 20'.
  • the storage capacitor design can basically However, for some special display mode structures with relatively high requirements on leakage current and high refresh rate, the requirements on the size of the storage capacitor are relatively high. Therefore, the conventional storage capacitor design cannot meet the requirements.
  • the metal layer common electrode 10' needs to be increased, and the pixel aperture ratio drops linearly, which affects the screen transmittance.
  • the display substrate provided by the present invention includes:
  • the display substrate includes a base substrate 10, and the base substrate 10 has a storage capacitor;
  • the storage capacitor includes: a metal layer common electrode 20; a first insulating layer 30 covering at least part of the base substrate 10; a transparent electrode layer 40 covering at least part of the first insulating layer 30; a second insulating layer 31 covering the transparent electrode layer 40 and
  • the first insulating layer 30 has a first via hole 32 at a position corresponding to the common electrode 20 of the metal layer.
  • the first via hole 32 penetrates the first insulating layer 30 and the second insulating layer 31.
  • the electrode layer 40 has a second via hole 33 at the position; the pixel electrode 50, at least partially covering the second insulating layer 31, is connected to the metal layer common electrode 20 via the first via hole 51, and is connected to the transparent electrode layer 40 via the second via hole 33 connect.
  • Covering the transparent electrode layer 40 on the first insulating layer 31 increases the area of the electrode close to the base substrate 10 and increases the storage capacity of the capacitor. Since the transparent electrode layer 40 covers the first insulating layer 30, The insulating layer covered on the transparent electrode layer 40 becomes thinner, which further increases the storage capacity of the capacitor. Since the transparent electrode layer 40 is added, there can also be a common electrode in the display area, and the transmittance will not be affected.
  • the transparent electrode layer 40 is provided with at least one undercut, which further avoids the influence of the transparent electrode layer 40 on the transmittance. This embodiment is excellent
  • the base substrate 10 is made of glass.
  • the transparent electrode layer 40 is made of ITO material.
  • the first insulating layer 30 and the second insulating layer 31 are made of silicon nitride.
  • the base substrate 10 is also covered with a non-capacitive area, the non-capacitive area is adjacent to the storage capacitor, and the non-capacitive area includes: a metal layer common electrode 20 at least partially covers the base substrate 10; a first insulating layer 30 covers the metal layer common electrode 20 ; the active layer 70 , covering at least part of the first insulating layer 30 ; the source and drain layers 60 , covering at least part of the active layer 70 ; the second insulating layer 31 , covering the active layer 70 .
  • the utility model covers the transparent electrode layer on the first insulating layer, increases the area of the electrode close to the substrate substrate, and increases the storage capacity of the capacitor. Since the transparent electrode layer covers the first insulating layer, the transparent electrode The insulating layer overlying the layer becomes thinner, further increasing the storage capacity of the capacitor. Since the transparent electrode layer is added, there can also be a common electrode in the display area, and the transmittance will not be affected.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示基板及显示装置，其中显示基板包括衬底基板（10），其上具有存储电容，存储电容包括金属层公共电极（20）；第一绝缘层（30）覆盖衬底基板（10）；透明电极层（40）覆盖第一绝缘层（30）；第二绝缘层（31）覆盖透明电极层（40）和第一绝缘层（30），在对应金属层公共电极（20）的位置处具有贯穿第一绝缘层（30）和第二绝缘层（31）的第一过孔（32），在对应透明电极层（40）位置处具有第二过孔（33）；像素电极（50）经第一过孔（32）与金属层公共电极（20）连接，经第二过孔（33）与透明电极层（40）连接。在第一绝缘层（30）上覆盖透明电极层（40），增大了靠近衬底基板（10）一侧的电极的面积和电容的存储量，并且透明电极层（40）上覆盖的绝缘层变薄，进一步增加了电容的存储量。由于增加的是透明电极层（40），因此在显示区域也可以有公共电极，并且不会影响透过率。

Description

一种显示基板及显示装置 技术领域
本实用新型涉及显示技术领域，尤其涉及一种显示基板及显示装置。
背景技术
存储电容是公共电极与像素电极之间形成的平板电容结构，常规的存储电容是由作为栅极的金属材料的公共电极与透明材料的像素电极形成存储电容，若需要增加存储电容，则需要增大公共电极的金属材料，则会导致像素开口率的下降，由于存储电容过小，会带来一些列的显示缺陷问题，比如残影、串扰、闪烁等一系列显示缺陷问题。现有的显示基板无法平衡像素开口率和存储电容。
有鉴于此，急需对现有的显示基板进行改进，在尽量少减少像素开口率的条件下增加存储电容。
实用新型内容
本实用新型公开一种显示基板及显示装置，用于解决现有技术中，显示基板增大存储电容像素开口率会减少的问题。
为了解决上述问题，本实用新型采用下述技术方案：
提供一种显示基板，包括衬底基板，所述衬底基板上具有存储电容；
所述存储电容包括：
金属层公共电极；
第一绝缘层，至少部分覆盖所述衬底基板；
透明电极层，至少部分覆盖所述第一绝缘层；
第二绝缘层，覆盖所述透明电极层和所述第一绝缘层，并在对应所述金属层公共电极的位置处具有第一过孔，所述第一过孔贯穿所述第一绝缘层和所述第二绝缘层，所述第二绝缘层在对应所述透明电极层位置处具有第二过孔；
像素电极，至少部分覆盖所述第二绝缘层，经所述第一过孔与所述金属层公共电极连接，经所述第二过孔与所述透明电极层连接。
在上述方案中，所述透明电极层上设有至少一个掏槽。
在上述方案中，所述衬底基板由玻璃制成。
在上述方案中，所述透明电极层由ITO材料制成。
在上述方案中，所述第一绝缘层和第二绝缘层由氮化硅制成。
在上述方案中，所述衬底基板上还覆盖非电容区，所述非电容区与所述存储电容相邻。
本实用新型还提供了一种显示装置，包括上述方案中任一项所述的显示基板。
本实用新型采用的技术方案能够达到以下有益效果：
在第一绝缘层上覆盖透明电极层，增大了靠近衬底基板一侧的电极的面积，增大了电容的存储量，由于透明电极层覆盖在第一绝缘层上，透明电极层上覆盖的绝缘层变薄，进一步增加了电容的存储量。由于增加的是透明电极层，因此在显示区域也可以有公共电极，并且不会影响透过率。
附图说明
为了更清楚地说明本实用新型实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，构成本实用新型的一部分，本实用新型的示意性实施例及其说明解释本实用新型，并不构成对本实用新型的不当限定。在附图中：
图1为现有技术中显示基板的整体结构示意图；
图2为本实用新型实施例公开的显示基板的整体结构示意图。
具体包括下述附图标记：
现有技术中的金属层公共电极-10’；现有技术中的像素电极-20’；衬底基板-10；金属层公共电极-20；第一绝缘层-30；透明电极层-40；像素电极-50；源漏极层-60；有源层-70；第二绝缘层-31；第一过孔-32；第二过孔-33。
具体实施方式
为使本实用新型的目的、技术方案和优点更加清楚，下面将结合本实用新型具体实施例及相应的附图对本实用新型技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本实用新型一部分实施例，而不是全部的实施例。基于本实用新型中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本实用新型保护的范围。
现有技术：如图1所示，常规的存储电容设计是由金属层公共电极10’和像素电极20’形成的平板电容，作为常规的扭曲向列型面板液晶显示器，存储电容设计基本上能够满足，但对于一些对漏电流，高刷新频率等要求比较高的特殊显示模式结构，对于存储电容的大小要求比较高。因此常规的存储电容设计就满足不了需求，增大存储电容，需增大金属层公共电极10’，像素开口率直线下降，影响屏幕透过率。
实施例1
如图2所示，本实用新型提供的显示基板，包括：
显示基板，包括衬底基板10，衬底基板10上具有存储电容；
存储电容包括：金属层公共电极20；第一绝缘层30，至少部分覆盖衬底基板10；透明电极层40，至少部分覆盖第一绝缘层30；第二绝缘层31，覆盖透明电极层40和第一绝缘层30，并在对应金属层公共电极20的位置处具有第一过孔32，第一过孔32贯穿第一绝缘层30和第二绝缘层31，第二绝缘层31在对应透明电极层40位置处具有第二过孔33；像素电极50，至少部分覆盖第二绝缘层31，经第一过孔51与金属层公共电极20连接，经第二过孔33与透明电极层40连接。在第一绝缘层31上覆盖透明电极层40，增大了靠近衬底基板10一侧的电极的面积，增大了电容的存储量，由于透明电 极层40覆盖在第一绝缘层30上，透明电极层40上覆盖的绝缘层变薄，进一步增加了电容的存储量。由于增加的是透明电极层40，因此在显示区域也可以有公共电极，并且不会影响透过率。
透明电极层40上设有至少一个掏槽，进一步避免了透明电极层40对透过率的影响。本实施例优
选的，衬底基板10由玻璃制成。
本实施例优选的，透明电极层40由ITO材料制成。
本实施例优选的，第一绝缘层30和第二绝缘层31由氮化硅制成。
衬底基板10上还覆盖非电容区，非电容区与存储电容相邻，非电容区包括：金属层公共电极20至少部分覆盖衬底基板10；第一绝缘层30，覆盖金属层公共电极20；有源层70，至少部分覆盖第一绝缘层30；源漏极层60，至少部分覆盖有源层70；第二绝缘层31，覆盖有源层70。
本实用新型在第一绝缘层上覆盖透明电极层，增大了靠近衬底基板一侧的电极的面积，增大了电容的存储量，由于透明电极层覆盖在第一绝缘层上，透明电极层上覆盖的绝缘层变薄，进一步增加了电容的存储量。由于增加的是透明电极层，因此在显示区域也可以有公共电极，并且不会影响透过率。
上面结合附图对本实用新型的实施例进行了描述，但是本实用新型并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本实用新型的启示下，在不脱离本实用新型宗旨和权利要求所保护的范围情况下，还可做出很多形式，均属于本实用新型的保护之内。

Claims (7)

  1. 一种显示基板，包括衬底基板，所述衬底基板上具有存储电容，其特征在于，
    所述存储电容包括：
    金属层公共电极；
    第一绝缘层，至少部分覆盖所述衬底基板；
    透明电极层，至少部分覆盖所述第一绝缘层；
    第二绝缘层，覆盖所述透明电极层和所述第一绝缘层，并在对应所述金属层公共电极的位置处具有第一过孔，所述第一过孔贯穿所述第一绝缘层和所述第二绝缘层，所述第二绝缘层在对应所述透明电极层位置处具有第二过孔；
    像素电极，至少部分覆盖所述第二绝缘层，经所述第一过孔与所述金属层公共电极连接，经所述第二过孔与所述透明电极层连接。
  2. 根据权利要求1所述的显示基板，其特征在于，所述透明电极层上设有至少一个掏槽。
  3. 根据权利要求1所述的显示基板，其特征在于，所述衬底基板由玻璃制成。
  4. 根据权利要求1所述的显示基板，其特征在于，所述透明电极层由ITO材料制成。
  5. 根据权利要求1所述的显示基板，其特征在于，所述第一绝缘层和第二绝缘层由氮化硅制成。
  6. 根据权利要求1所述的显示基板，其特征在于，所述衬底基板上还覆盖非电容区，所述非电容区与所述存储电容相邻。
  7. 一种显示装置，其特征在于，包括权利要求1-6任一项所述的显示基板。
PCT/CN2020/125025 2020-09-15 2020-10-30 一种显示基板及显示装置 WO2022057023A1 (zh)

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CN106444198A (zh) * 2016-12-09 2017-02-22 武汉华星光电技术有限公司 一种tft基板及其制造方法、液晶面板
US20170227825A1 (en) * 2009-01-05 2017-08-10 Seiko Epson Corporation Electro-optical device and electronic apparatus
CN208400850U (zh) * 2018-07-24 2019-01-18 信利半导体有限公司 一种像素结构、阵列基板及tn型显示面板
CN110707101A (zh) * 2019-10-16 2020-01-17 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法、显示面板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170227825A1 (en) * 2009-01-05 2017-08-10 Seiko Epson Corporation Electro-optical device and electronic apparatus
CN106444198A (zh) * 2016-12-09 2017-02-22 武汉华星光电技术有限公司 一种tft基板及其制造方法、液晶面板
CN208400850U (zh) * 2018-07-24 2019-01-18 信利半导体有限公司 一种像素结构、阵列基板及tn型显示面板
CN110707101A (zh) * 2019-10-16 2020-01-17 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法、显示面板

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