WO2022052251A1 - 显示装置及显示装置的制备方法 - Google Patents

显示装置及显示装置的制备方法 Download PDF

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WO2022052251A1
WO2022052251A1 PCT/CN2020/125113 CN2020125113W WO2022052251A1 WO 2022052251 A1 WO2022052251 A1 WO 2022052251A1 CN 2020125113 W CN2020125113 W CN 2020125113W WO 2022052251 A1 WO2022052251 A1 WO 2022052251A1
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layer
nanoparticles
substrate
active
nano
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PCT/CN2020/125113
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English (en)
French (fr)
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黄辉
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Tcl华星光电技术有限公司
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Priority to US16/972,766 priority Critical patent/US11765942B2/en
Publication of WO2022052251A1 publication Critical patent/WO2022052251A1/zh

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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
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    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C09D141/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur; Coating compositions based on derivatives of such polymers
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    • C09D181/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur, with or without nitrogen, oxygen, or carbon only; Coating compositions based on polysulfones; Coating compositions based on derivatives of such polymers
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    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/66—Additives characterised by particle size
    • C09D7/67—Particle size smaller than 100 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H10K50/00—Organic light-emitting devices
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/14—Side-groups
    • C08G2261/142—Side-chains containing oxygen
    • C08G2261/1424—Side-chains containing oxygen containing ether groups, including alkoxy
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/70—Post-treatment
    • C08G2261/79—Post-treatment doping
    • C08G2261/794—Post-treatment doping with polymeric dopants
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/95—Use in organic luminescent diodes
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    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
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    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technology, and in particular, to a display device and a preparation method of the display device.
  • OLED displays have self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, wide viewing angle, and wide operating temperature range, which can realize flexible display and large-area full-scale display. It has many advantages such as color display and is recognized by the industry as the display device with the most development potential.
  • Pixel definition layer (pixel definition layer) is prepared on the substrate Definition layer, PDL) constraints, the pixel definition layer includes a plurality of retaining walls, the plurality of retaining walls respectively form a plurality of openings, and each opening is the above-mentioned specific area.
  • PDL substrate Definition layer
  • the cross-section of the retaining wall is a regular trapezoid
  • the two sides of the regular trapezoid have a certain angle with the substrate surface after the preparation, so that the ink cannot be completely spread out in the pixel.
  • the excessive contact angle of the ink droplets close to the side of the retaining wall causes the thickness of the droplets to be larger, so that the thickness of the ink droplets far from the side of the retaining wall and close to the middle of the opening is relatively thin.
  • the uniformity of the ink droplets in the same pixel unit is poor and the film thickness is not uniform, which eventually leads to low luminous efficiency.
  • the ink cannot be spread smoothly, the upper surface of the ink is higher than the upper surface of the retaining wall, or the ink droplets cannot drop to a specific area and fall on the edge of the retaining wall, so The pixel definition layer cannot block the inks in adjacent pixel units, so that the inks in the adjacent pixel units are bridged, thereby causing the inks in the adjacent pixel units to be mixed, resulting in a color mixing phenomenon.
  • the display devices in the prior art have technical problems that the ink spreads unevenly in the pixel unit, resulting in poor liquid level uniformity in the same pixel unit, uneven film thickness and color mixing between adjacent pixel units.
  • Embodiments of the present invention provide a display device and a method for fabricating a display device, which are used to solve the problem that ink spreads unevenly in a pixel unit in a display device in the prior art, resulting in poor liquid level uniformity and film in the same pixel unit.
  • the present invention provides a display device, which includes:
  • a pixel definition layer disposed on the substrate, with a plurality of pixel openings
  • a surface-active nano-layer disposed on the surface of the substrate and extending to the surface of the pixel-defining layer, the surface-active nano-layer coating a plurality of nanoparticles;
  • the light-emitting layer is disposed in the plurality of pixel openings.
  • the surface active nanolayer includes a plurality of discontinuous nanoparticles
  • the materials of the nanoparticles include conductive metals or conductive polymers
  • the conductive metals include nano-gold spheres or nano-silver spheres .
  • the material of the surface active nano-layer includes polydioxyethylthiophene and polybenzenesulfonate, and the ratio of polydioxyethylthiophene to polybenzenesulfonate is 1: 5 ⁇ 8:1, the mass fraction of the polydioxyethylthiophene is 25% ⁇ 40%.
  • the maximum height of the nanoparticles is less than the thickness of the surface-active nanolayer.
  • the maximum height of the nanoparticles is 20 nm to 50 nm, and the thickness of the surface active nano layer is 20 nm to 80 nm.
  • the energy level of the surface-active nanolayer matches the energy level of the light-emitting layer.
  • the surface of a side of the surface active nano-layer away from the substrate is flat.
  • a plurality of anodes are disposed on the surface of the substrate, and the pixel definition layer includes a plurality of retaining walls, each of which is disposed between two adjacent gaps of the anodes.
  • the present invention provides a preparation method of a display device, the preparation method is used to prepare the display device according to any one of the first aspects, comprising the following steps:
  • a substrate on which a pixel definition layer is prepared the pixel definition layer having a plurality of pixel openings
  • a light-emitting layer is prepared in the plurality of pixel openings to obtain the display device.
  • spin coating, coating, printing or evaporation method is used to prepare the surface active nanolayer, and printing or evaporation method is used to prepare the light-emitting layer.
  • preparing the surface active nanolayer comprises:
  • the second solution is dried and baked to remove the solvent in the second solution, so as to obtain the surface-active nano-layer, and the surface-active nano-layer coats the plurality of nanoparticles.
  • preparing the surface-active nanolayer comprises:
  • the third solution is dried and baked to remove the solvent in the third solution, so as to obtain the surface active nano layer, and the surface active nano layer covers the plurality of nanoparticles.
  • the surface-active nanolayer comprises a discrete plurality of nanoparticles.
  • the materials for preparing the nanoparticles include conductive metals or conductive polymers, and the conductive metals include nano-gold spheres or nano-silver spheres.
  • the material for preparing the surface active nanolayer includes polydioxyethylthiophene and polybenzenesulfonate, and the ratio of polydioxyethylthiophene to polybenzenesulfonate is 1 : 5 ⁇ 8:1, the mass fraction of the polydioxyethylthiophene is 25% ⁇ 40%.
  • the maximum height of the nanoparticles is less than the thickness of the surface-active nanolayer.
  • the maximum height of the nanoparticles is 20 nm to 50 nm, and the thickness of the surface active nano layer is 20 nm to 80 nm.
  • the energy level of the material from which the surface-active nanolayer is made matches the energy level of the material from which the light-emitting layer is made.
  • preparing the surface-active nano-layer further includes performing a planarization process on a surface of the surface-active nano-layer away from the substrate.
  • a plurality of anodes are also prepared on the surface of the substrate, the pixel definition layer includes a plurality of retaining walls, and each of the retaining walls is disposed between two adjacent gaps of the anodes. between.
  • the ink drops.
  • the area of the contact surface becomes smaller, the ink flows down along the nanoparticles dispersion, and then spreads evenly in the openings of the pixel definition layer, so that the ink can cover
  • the wettability of the ink is improved, and the color mixing phenomenon between the adjacent pixel units is improved; at the same time, the flatness of the upper surface of the surface-active nano-layer after spreading is far greater.
  • the energy level of the surface active nanolayer matches the energy level of the light-emitting layer, further improving the uniformity of the light-emitting layer, preventing the surface of the light-emitting layer from being uneven on the nanoparticles It is uneven, which causes electrons or holes to be captured in advance and cannot reach the light-emitting layer to complete light emission, and also avoids that the energy level of the nanoparticles is inconsistent with the energy level of the light-emitting layer, resulting in hole carriers and electron carriers. child transmission is difficult.
  • FIG. 1 is a schematic structural diagram of a display device in an embodiment of the present invention
  • Fig. 2 is the flow chart of the preparation method in one embodiment of the present invention.
  • 3A to 3C are step-by-step schematic diagrams of the preparation method in one embodiment of the present invention.
  • Embodiments of the present invention provide a display device and a method for manufacturing the display device. The detailed descriptions are given below.
  • FIG. 1 is a schematic structural diagram of a display device in an embodiment of the present invention.
  • the display device includes: a substrate 101 ; and a pixel definition layer 102 , which is disposed on the substrate On 101, there are a plurality of pixel openings; a surface active nano layer 104 is disposed on the surface of the substrate 101 and extends to the surface of the pixel definition layer 102, and the surface active nano layer 104 coats a plurality of nanoparticles 103; And the light-emitting layer 105 is disposed in the plurality of pixel openings.
  • the present invention provides the surface covering the plurality of nanoparticles 103 on the surface of the substrate 101 and the surface extending to the pixel definition layer 102 .
  • the active nano-layer 104 when the light-emitting layer 105 is ink-jet printed, the ink droplets first come into contact with the nanoparticles 103, and the area of the contact surface becomes smaller, the ink is dispersed and flows down along the nanoparticles 103, and then Spread evenly in the opening of the pixel definition layer 102, so that the ink can cover the corners of the bottom of the opening, the wettability of the ink is improved, and the gap between the adjacent pixel units is improved.
  • the flatness of the upper surface of the surface-active nano-layer 104 after spreading is much higher than that of the nanoparticles 103, and the energy level of the surface-active nano-layer 104 is the same as the energy level of the light-emitting layer 105.
  • level matching further improving the uniformity of the light-emitting layer 105, preventing the uneven surface of the light-emitting layer 105 on the nanoparticles 103, resulting in electrons or holes being captured in advance and unable to reach the light-emitting layer 105 to complete light emission , it also avoids that the energy level of the nanoparticle 103 is inconsistent with the energy level of the light-emitting layer 105 , resulting in difficulty in the transport of hole carriers and electron carriers.
  • the surface active nanolayer 104 includes a plurality of discontinuous nanoparticles 103, the materials of the nanoparticles 103 include conductive metals or conductive polymers, and the conductive metals include nano-gold spheres or nano-silver spheres . Since the contact between the substrate 101 and the ink printed by inkjet printing is not good, in this embodiment, a layer of the The nanoparticles 103 change the contact properties between the ink and the substrate 101, the contact angle between the ink and the substrate 101 becomes smaller, and the adsorption becomes better, so a film layer can be formed.
  • the film layer is in complete contact with the substrate 101 , and the electric charges are transmitted smoothly in the light-emitting device 105 formed by the substrate 101 and the ink.
  • the surface-active nano-layer 104 includes a plurality of nanoparticles 103, and there is a certain distance between two adjacent nanoparticles 103, that is, discontinuous distribution, to prevent the ink from moving along the nanoparticles 103 during inkjet printing.
  • the sliding slide spreads the sliding speed is too slow, causing the lower layer of ink to be relatively sparser than the upper layer of ink, so the discontinuous distribution helps the ink to slide at an appropriate rate.
  • two adjacent nanoparticles 103 are spaced at the same distance, and the plurality of nanoparticles 103 are uniformly distributed on the surface of the substrate 101 and extending to the pixel definition layer 102 . On the surface, in other embodiments, two adjacent nanoparticles 103 are separated by different distances.
  • the nanoparticles 103 also have conductive properties, and the materials of the nanoparticles 103 include conductive metals or conductive polymers.
  • the nanoparticles 103 are conductive metals; the conductive metals include nano-copper balls, nano-palladium balls, Nano-nickel balls, nano-silver balls and nano-gold balls, preferably, the nanoparticles 103 are nano-gold balls or nano-silver balls.
  • the substrate 101 is an array substrate.
  • the surface active nanolayer 104 is disposed on the surface of the substrate 101 and extends to the surface of the pixel definition layer 102 and coats the nanoparticles 103.
  • the surface active nanolayer 104 and the The nanoparticles 103 are all distributed on the surface of the substrate 101 that is not in contact with the pixel definition layer 102 and on the inclined side surface and the upper surface of the pixel definition layer 102 .
  • the material of the surface active nano layer 104 includes polydioxyethylthiophene and polybenzenesulfonate (PEDOT:PSS), and the ratio of the polydioxyethylthiophene and polybenzenesulfonate is 1:5 ⁇ 8:1, the mass fraction of the polydioxyethylthiophene is 25% ⁇ 40%.
  • PEDOT:PSS polydioxyethylthiophene and polybenzenesulfonate
  • the surface-active nano-layer 104 needs to be selected from materials that do not affect the properties of the substrate 101 and the pixel definition layer 102 and correspond to the good wettability of the ink, such as indium tin oxide (ITO), polydioxyethylthiophene : polybenzenesulfonate (PEDOT:PSS), polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP), preferably, polydioxyethylthiophene:polybenzenesulfonate (PEDOT:PSS) is selected.
  • ITO indium tin oxide
  • PEDOT:PSS polydioxyethylthiophene : polybenzenesulfonate
  • PVA polyvinyl alcohol
  • PVP polyvinylpyrrolidone
  • PEDOT:PSS polydioxyethylthiophene:polybenzenesulfonate
  • the polydioxyethylthiophene:polybenzenesulfonate can also act as a buffer layer to improve the adhesion of the light-emitting layer 105, and the ink spreads on the polydioxyethylthiophene:polybenzenesulfonate. to a greater extent.
  • the maximum height of the nanoparticles 103 is smaller than the thickness of the surface active nano-layer 104 .
  • the maximum height of the nanoparticles 103 is D1
  • the thickness of the surface-active nano-layer 104 is D2.
  • the upper surface of the surface-active nano-layer 104 needs to be higher than the nanoparticles 103 , and the thickness of the surface-active nano-layer 104 is greater than the maximum height of the nanoparticles 103 , D1 ⁇ D2 .
  • the maximum height D1 of the nanoparticles 103 is 20 nm ⁇ 50 nm
  • the thickness D2 of the surface active nano layer is 20 nm ⁇ 80 nm.
  • the energy level of the surface active nano-layer 104 is matched with the energy level of the light-emitting layer 105 .
  • the energy level of the light-emitting layer 105 and the energy level of the nanoparticles 103 are quite different and cannot be matched. Therefore, to optimize the energy level structure between the substrate 101 and the light-emitting layer 105, The energy level of the surface active nanolayer 104 is matched with the energy level of the light emitting layer 105 , and a hole injection and transport system with gradient energy levels is constructed by using the surface active nanolayer 104 .
  • the light-emitting layer 105 generally includes a hole injection layer, a hole transport layer, an organic light-emitting material layer, an electron transport layer and part or all of the electron injection layer, and has a suitable energy level gradient with the anode on the substrate 101 .
  • the nanoparticles 103 and the surface-active nano-layer 104 are newly added between the anode and the light-emitting layer 105. Therefore, the surface-active nano-layer 104 with an appropriate energy level should be selected. , to avoid destroying the energy level gradient, resulting in the inability of free hole carriers to be transported smoothly.
  • the embodiment of the present invention further provides a preparation method of the display device, and the preparation method is used to prepare the above-mentioned embodiment. display device described in .
  • FIG. 2 is a flowchart of a preparation method in an embodiment of the present invention
  • FIGS. 3A to 3C are step-by-step schematic diagrams of a preparation method in an embodiment of the present invention.
  • the preparation method of the display device includes the following steps:
  • a substrate 101 is provided, and a pixel definition layer 102 is prepared on the substrate 101, and the pixel definition layer 102 has a plurality of pixel openings;
  • the substrate 101 is an array substrate in this embodiment, a plurality of anodes (not shown in the figure) are prepared on the surface of the array substrate, and the pixel definition layer 102 is prepared on the surface of the array substrate.
  • the pixel definition layer 102 includes a plurality of retaining walls, the retaining walls are disposed between the adjacent anode gaps, and the plurality of retaining walls form a plurality of openings, as shown in FIG. 3A .
  • the surface-active nano-layer 104 may further include plasma treatment, Ozone treatment, etc., can further improve the surface activity and eliminate foreign matter that may appear on the surface of the film.
  • the preparation of the surface active nano layer 104 can be performed by successively preparing the nanoparticles 103 and the surfactant on the surface of the substrate 101 and extending to the surface of the pixel definition layer 102 in two steps. At the same time, the nanoparticles 103 and the surfactant are prepared on the surface of the substrate 101 and extended to the surface of the pixel definition layer 102 , which will be described separately below.
  • the preparation of the surface-active nanolayer 104 in two steps includes: preparing a first solution doped with nanoparticles 103, spin-coating, coating, printing or evaporating the first solution on the surface of the substrate 101 and extending to On the surface of the pixel definition layer 102, the first solution is dried and baked to remove the solvent in the first solution to obtain a plurality of nanoparticles 103, as shown in FIG.
  • the maximum height of the nanoparticles 103 formed after drying and curing is 20 nm ⁇ 50 nm.
  • the plurality of nanoparticles 103 are discontinuous.
  • the nanoparticles 103 are nano gold spheres or nano silver spheres
  • the thickness of the surface active nano layer 104 formed after drying and curing is 20 nm ⁇ 80 nm.
  • the thickness of the surface-active nano-layer 104 is greater than the maximum height of the nanoparticles 103 .
  • the surface-active nano-layer 104 is polydioxyethylthiophene:polybenzenesulfonate.
  • One-step preparation of the surface-active nano-layer 104 includes: preparing a third solution doped with nanoparticles 103 and surfactants; spin-coating, coating, printing or evaporating the third solution on the surface of the substrate and extending to the surface of the pixel definition layer; drying and baking the third solution to remove the solvent in the third solution to obtain the surface-active nano-layer 104, the surface-active nano-layer 104 covering the multiple nanoparticles, as shown in Figure 3C.
  • the third solution is essentially a mixed solution of the first solution and the second solution, so the preparation process, environment, and properties are similar to the two-step method, and the content of each solute and solvent can be adjusted appropriately.
  • the light-emitting layer 105 is prepared by printing or vapor deposition, as shown in FIG. 1 .
  • each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference may be made to the above detailed description of other embodiments, and details are not repeated here.
  • each of the above units or structures can be implemented as independent entities, or can be arbitrarily combined to be implemented as the same or several entities.

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Abstract

一种显示装置及显示装置的制备方法，显示装置包括：基板（101）；像素定义层（102），设置于基板（101）上，具有多个像素开口；表面活性纳米层（104），设置于基板（101）的表面和延伸至像素定义层（102）的表面，表面活性纳米层（104）包覆多个纳米颗粒；及发光层（105），设置于多个像素开口内。

Description

显示装置及显示装置的制备方法 技术领域
本发明涉及显示技术领域，具体涉及一种显示装置及显示装置的制备方法。
 背景技术
有机发光二极管(Organic Light Emitting Diodes，OLED)显示器具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、宽视角、使用温度范围广，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
目前OLED器件，主流的方向为喷墨打印，其主要是将材料溶解于溶剂中，配置成墨水，然后在利用喷墨打印的方式将墨水逐滴的打印在特定的区域中，这个区域通过在基板上制备像素定义层(pixel definition layer，PDL)约束，像素定义层包括多个挡墙，多个挡墙分别形成多个开口，每个开口内即为上述特定区域。但是目前像素定义层存在一些问题，由于挡墙的截面为正梯形，制备完成后该正梯形的两侧面与基板表面存在一定的角度，使得墨水在像素里面不能完全的铺展开来，当打印的墨水固化后，贴近挡墙侧面的墨水液滴产生过大的接触角造成该处液滴厚度较大，使得远离挡墙侧面、靠近所述开口中间的墨水液滴的液滴厚度相对较薄，从而造成同一个像素单元内墨水液滴的均一性差、膜厚不均的情况发生，最终导致发光效率较低。而在墨滴铺展过程中，还会存在墨水由于无法顺利铺展，墨水的上表面高于所述挡墙的上表面，或者墨滴无法滴落特定区域，滴落在所述挡墙边缘，所述像素定义层无法阻隔相邻像素单元内墨水，从而导致相邻像素单元内的墨水产生桥接的情况，进而导致相邻像素单元内的墨水进行混和，产生混色现象。
 技术问题
现有技术中的显示装置存在有墨水在像素单元内铺展不均匀，从而导致同一个像素单元内液面均一性差、膜厚不均和相邻像素单元之间产生混色现象的技术问题。
 技术解决方案
本发明实施例提供一种显示装置及显示装置的制备方法，用于解决现有技术中的显示装置存在有墨水在像素单元内铺展不均匀，从而导致同一个像素单元内液面均一性差、膜厚不均和相邻像素单元之间产生混色现象的技术问题。
为解决上述问题，第一方面，本发明提供一种显示装置，其中，包括：
基板；
像素定义层，设置于所述基板上，具有多个像素开口；
表面活性纳米层，设置于所述基板的表面和延伸至所述像素定义层的表面，所述表面活性纳米层包覆多个纳米颗粒；及
发光层，设置于所述多个像素开口内。
在本发明的一些实施例中，所述表面活性纳米层包括不连续的多个纳米颗粒，所述纳米颗粒的材料包括导电金属或导电高分子，所述导电金属包括纳米金球或纳米银球。
在本发明的一些实施例中，所述表面活性纳米层的材料包括聚二氧乙基噻吩和聚苯磺酸盐，所述聚二氧乙基噻吩和聚苯磺酸盐的比例为1:5~8:1，所述聚二氧乙基噻吩的质量分数为25%~40%。
在本发明的一些实施例中，所述纳米颗粒的最大高度小于所述表面活性纳米层的厚度。
在本发明的一些实施例中，所述纳米颗粒的最大高度为20nm~50nm，所述表面活性纳米层的厚度为20nm~80nm。
在本发明的一些实施例中，所述表面活性纳米层的能级与所述发光层的能级相匹配。
在本发明的一些实施例中，所述表面活性纳米层远离所述基板的一侧表面平整。
在本发明的一些实施例中，所述基板表面设置有多个阳极，所述像素定义层包括多个挡墙，每个所述挡墙设置于相邻的两个所述阳极间隙之间。
第二方面，本发明提供一种显示装置的制备方法，所述制备方法用于制备如第一方面中任一所述的显示装置，包括以下步骤：
提供一基板，在所述基板上制备像素定义层，所述像素定义层具有多个像素开口；
在所述基板的表面和延伸至所述像素定义层的表面制备表面活性纳米层，所述表面活性纳米层包覆多个纳米颗粒；及
在所述多个像素开口内制备发光层，得到所述显示装置。
在本发明的一些实施例中，制备所述表面活性纳米层采用旋涂、涂布、打印或蒸镀法，制备所述发光层采用打印或蒸镀法。
在本发明的一些实施例中，制备所述表面活性纳米层包括:
制备掺有纳米颗粒的第一溶液；
将所述第一溶液旋涂于所述基板的表面和延伸至所述像素定义层的表面；
对所述第一溶液进行干燥烘烤去除所述第一溶液中的溶剂，得到多个纳米颗粒；
制备掺有表面活性剂的第二溶液；
将所述第二溶液旋涂于所述基板的表面和延伸至所述像素定义层的表面；
对所述第二溶液进行干燥烘烤去除所述第二溶液中的溶剂，得到所述表面活性纳米层，所述表面活性纳米层包覆所述多个纳米颗粒。
在本发明的一些实施例中，制备所述表面活性纳米层包括：
制备掺有纳米颗粒和表面活性剂的第三溶液；
将所述第三溶液旋涂于所述基板的表面和延伸至所述像素定义层的表面；
对所述第三溶液进行干燥烘烤去除所述第三溶液中的溶剂，得到所述表面活性纳米层，所述表面活性纳米层包覆所述多个纳米颗粒。
在本发明的一些实施例中，所述表面活性纳米层包括不连续的多个纳米颗粒。
在本发明的一些实施例中，制备所述纳米颗粒的材料包括导电金属或导电高分子，所述导电金属包括纳米金球或纳米银球。
在本发明的一些实施例中，制备所述表面活性纳米层的材料包括聚二氧乙基噻吩和聚苯磺酸盐，所述聚二氧乙基噻吩和聚苯磺酸盐的比例为1:5~8:1，所述聚二氧乙基噻吩的质量分数为25%~40%。
在本发明的一些实施例中，所述纳米颗粒的最大高度小于所述表面活性纳米层的厚度。
在本发明的一些实施例中，所述纳米颗粒的最大高度为20nm~50nm，所述表面活性纳米层的厚度为20nm~80nm。
在本发明的一些实施例中，制备所述表面活性纳米层的材料的能级与制备所述发光层的材料的能级相匹配。
在本发明的一些实施例中，制备所述表面活性纳米层还包括，对所述表面活性纳米层远离所述基板的一侧表面进行平坦化处理。
在本发明的一些实施例中，还包括在所述基板表面制备多个阳极，所述像素定义层包括多个挡墙，每个所述挡墙设置于相邻的两个所述阳极间隙之间。
 有益效果
本发明通过在所述基板的表面和延伸至所述像素定义层的表面设置包覆所述多个纳米颗粒的所述表面活性纳米层，喷墨打印所述发光层时，所述墨水滴落先与所述纳米颗粒接触，接触面的面积变小，所述墨水顺着所述纳米颗粒分散流下，然后均匀地在所述像素定义层的所述开口内铺展开，从而所述墨水可以覆盖所述开口底部的边角位置，所述墨水的浸润性得以改善，进而所述相邻像素单元之间的混色现象得以改善；同时，所述表面活性纳米层铺展开后上表面的平整性远高于所述纳米颗粒，所述表面活性纳米层的能级与所述发光层的能级相匹配，进一步提高所述发光层的均一性，防止所述发光层在所述纳米颗粒上表面凹凸不平，导致电子或空穴被提前捕获而无法到达所述发光层完成发光，也避免了所述纳米颗粒的能级与所述发光层的能级不一致，造成空穴载流子和电子载流子的传输困难。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一个实施例中显示装置的结构示意图；
图2为本发明一个实施例中制备方法的流程图；
图3A~3C为本发明一个实施例中制备方法的分步示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“高度”、“宽度”、“厚度”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
本发明实施例中提供一种显示装置和显示装置的制备方法。以下分别进行详细介绍。
首先，本发明提供一种显示装置，如图1所示，图1为本发明一个实施例中显示装置的结构示意图，所述显示装置包括：基板101；像素定义层102，设置于所述基板101上，具有多个像素开口；表面活性纳米层104，设置于所述基板101的表面和延伸至所述像素定义层102的表面，所述表面活性纳米层104包覆多个纳米颗粒103；及发光层105，设置于所述多个像素开口内。
相较于现有的显示装置及显示装置的制备方法，本发明通过在所述基板101的表面和延伸至所述像素定义层102的表面设置包覆所述多个纳米颗粒103的所述表面活性纳米层104，喷墨打印所述发光层105时，所述墨水滴落先与所述纳米颗粒103接触，接触面的面积变小，所述墨水顺着所述纳米颗粒103分散流下，然后均匀地在所述像素定义层102的所述开口内铺展开，从而所述墨水可以覆盖所述开口底部的边角位置，所述墨水的浸润性得以改善，进而所述相邻像素单元之间的混色现象得以改善；同时，所述表面活性纳米层104铺展开后上表面的平整性远高于所述纳米颗粒103，所述表面活性纳米层104的能级与所述发光层105的能级相匹配，进一步提高所述发光层105的均一性，防止所述发光层105在所述纳米颗粒103上表面凹凸不平，导致电子或空穴被提前捕获而无法到达所述发光层105完成发光，也避免了所述纳米颗粒103的能级与所述发光层105的能级不一致，造成空穴载流子和电子载流子的传输困难。
在上述实施例中，所述表面活性纳米层104包括不连续的多个纳米颗粒103，所述纳米颗粒103的材料包括导电金属或导电高分子，所述导电金属包括纳米金球或纳米银球。由于所述基板101与喷墨打印的所述墨水之间接触性质不好，在本实施例中，预先在所述基板101的表面和延伸至所述像素定义层102的表面沉积一层所述纳米颗粒103，则改变了所述墨水与所述基板101之间的接触性质，所述墨水与所述基板101之间的接触角变小，吸附性变好，因此可以形成膜层，所述膜层与所述基板101接触完整，电荷在所述基板101与所述墨水形成的所述发光成105传输顺利。所述表面活性纳米层104包括多个纳米颗粒103，相邻的两个所述纳米颗粒103之间间隔一定间距，即不连续分布，防止喷墨打印时墨水在顺着所述纳米颗粒103向下滑落铺展时，下滑速度过慢，导致下层墨水较上层墨水相对稀疏，因此，不连续分布有助于所述墨水以适当的速率下滑。在一些实施例中，相邻的两个所述纳米颗粒103之间间隔相同的间距，所述多个纳米颗粒103均匀的分布在所述基板101的表面和延伸至所述像素定义层102的表面，在另一些实施例中，相邻的两个所述纳米颗粒103之间间隔不同的间距。所述纳米颗粒103也具有导电性能，所述纳米颗粒103的材料包括导电金属或导电高分子，优选的，所述纳米颗粒103为导电金属；所述导电金属包括纳米铜球、纳米钯球、纳米镍球、纳米银球和纳米金球，优选的，所述纳米颗粒103为纳米金球或纳米银球。优选的，所述基板101为阵列基板。
由于纳米颗粒103表面具有高表面能，颗粒之间容易团聚，且纳米金属颗粒如纳米铜球抗氧化性很差，为保持纳米金属颗粒的性能，通常需要在纳米金属颗粒表面进行有机包覆。在本实施例中，所述表面活性纳米层104设置于所述基板101的表面和延伸至所述像素定义层102的表面且包覆所述纳米颗粒103，所述表面活性纳米层104和所述纳米颗粒103均分布于所述基板101不与所述像素定义层102接触的表面和所述像素定义层102的斜侧面和上表面。其中，所述表面活性纳米层104的材料包括聚二氧乙基噻吩和聚苯磺酸盐（PEDOT：PSS），所述聚二氧乙基噻吩和聚苯磺酸盐的比例为1:5~8:1，所述聚二氧乙基噻吩的质量分数为25%~40%。所述表面活性纳米层104需选用不影响所述基板101和所述像素定义层102的性质且对应所述墨水浸润性好的材料，如：氧化铟锡(ITO)、聚二氧乙基噻吩：聚苯磺酸盐(PEDOT:PSS)、聚乙烯醇(PVA)、聚乙烯吡咯烷酮(PVP)，优选的，选用聚二氧乙基噻吩：聚苯磺酸盐(PEDOT:PSS)。所述聚二氧乙基噻吩：聚苯磺酸盐还可以作为缓冲层提高所述发光层105的黏附力，所述墨水在所述聚二氧乙基噻吩：聚苯磺酸盐上铺展的程度更大。
值得一提的是，所述纳米颗粒103的最大高度小于所述表面活性纳米层104的厚度。如图1所示，所述纳米颗粒103的最大高度为D1，所述表面活性纳米层104的厚度为D2，为了使所述表面活性纳米层104能够全部包覆所述纳米颗粒103，所述表面活性纳米层104的上表面需高于所述纳米颗粒103，则所述表面活性纳米层104的厚度大于所述纳米颗粒103的最大高度，D1＜D2。优选的，所述纳米颗粒103的最大高度D1为20nm~50nm，所述表面活性纳米层的厚度D2为20nm~80nm。
在上述实施例的基础上，所述表面活性纳米层104的能级与所述发光层105的能级相匹配。在部分实施例中，所述发光层105的能级和所述纳米颗粒103的能级相差较大，无法匹配，因此要优化所述基板101与所述发光层105之间的能级结构，所述表面活性纳米层104的能级与所述发光层105的能级相匹配，利用所述表面活性纳米层104构建具有梯度能级的空穴注入传输体系。所述发光层105通常包括空穴注入层、空穴传输层、有机发光材料层、电子传输层及电子注入层中的部分或全部，与所述基板101上的阳极具有合适的能级梯度。但在本实施例中，所述阳极和所述发光层105之间新增了所述纳米颗粒103和所述表面活性纳米层104，因此，要选择恰当能级的所述表面活性纳米层104，避免破坏能级梯度，导致游离的空穴载流子无法顺利传输。
为了更好地制得本发明实施例中显示装置，在所述显示装置的基础之上，本发明实施例中还提供一种显示装置的制备方法，所述制备方法用于制备如上述实施例中所述的显示装置。
如图2和图3A~3C所示，图2为本发明一个实施例中制备方法的流程图，图3A~图3C为本发明一个实施例中制备方法的分步示意图。所述显示装置的制备方法包括以下步骤：
S1、提供一基板101，在所述基板101上制备像素定义层102，所述像素定义层102具有多个像素开口；
具体的，所述基板101在本实施例中为阵列基板，所述阵列基板表面制备有多个阳极（图中未示出），在所述阵列基板表面制备所述像素定义层102，所述像素定义层102包括多个挡墙，所述挡墙设置于相邻所述阳极间隙之间，所述多个挡墙形成多个开口，如图3A所示。
S2、在所述基板101的表面和延伸至所述像素定义层102的表面制备表面活性纳米层104，所述表面活性纳米层104包覆多个纳米颗粒103；
具体的，制备所述表面活性纳米层104采用旋涂、涂布、打印或蒸镀法，制备所述表面活性纳米层104完成之后还可以包括对所述表面活性纳米层104进行等离子体处理、臭氧处理等，可以进一步提高表面活性和消除膜层表面可能出现的异物。
值得一提的是，制备表面活性纳米层104可以分两步先后分别将所述纳米颗粒103和表面活性剂制备于所述基板101的表面和延伸至所述像素定义层102的表面，也可以同时将所述纳米颗粒103和所述表面活性剂制备于所述基板101的表面和延伸至所述像素定义层102的表面，以下分别介绍。
分两步制备所述表面活性纳米层104包括：制备掺有纳米颗粒103的第一溶液，将所述第一溶液旋涂、涂布、打印或蒸镀于所述基板101的表面和延伸至所述像素定义层102的表面，对所述第一溶液进行干燥烘烤去除所述第一溶液中的溶剂，得到多个纳米颗粒103，如图3B所示；制备掺有表面活性剂的第二溶液；将所述第二溶液旋涂、涂布、打印或蒸镀于所述基板101的表面和延伸至所述像素定义层102的表面；对所述第二溶液进行干燥烘烤去除所述第二溶液中的溶剂，得到所述表面活性纳米层104，所述表面活性纳米层104包覆所述多个纳米颗粒103，如图3C所示。
其中，干燥固化后形成的所述纳米颗粒103最大高度为20nm~50nm。所述多个纳米颗粒103不连续，优选的，所述纳米颗粒103为纳米金球或纳米银球，干燥固化后形成的所述表面活性纳米层104厚度为20nm~80nm。同一个实施例中，所述表面活性纳米层104的厚度大于所述纳米颗粒103的最大高度，优选的，所述表面活性纳米层104为聚二氧乙基噻吩：聚苯磺酸盐。
一步制备所述表面活性纳米层104包括：制备掺有纳米颗粒103和表面活性剂的第三溶液；将所述第三溶液旋涂、涂布、打印或蒸镀于所述基板的表面和延伸至所述像素定义层的表面；对所述第三溶液进行干燥烘烤去除所述第三溶液中的溶剂，得到所述表面活性纳米层104，所述表面活性纳米层104包覆所述多个纳米颗粒，如图3C所示。
可以理解的是，一步法中尤其要注意所述纳米颗粒103在所述表面活性纳米层104中位置的高度，所述表面活性纳米层104的上表面要始终覆盖所述纳米颗粒103。所述第三溶液实质上是所述第一溶液和所述第二溶液的混合溶液，所以制备工艺、环境、性质与两步法类似，各溶质、溶剂的含量可进行适当调整。
S3、在所述多个像素开口内制备发光层105。
具体的，制备所述发光层105采用打印或蒸镀法，如图1所示。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。具体实施时，以上各个单元或结构可以作为独立的实体来实现，也可以进行任意组合，作为同一或若干个实体来实现，以上各个单元、结构或操作的具体实施可参见前面的方法实施例，在此不再赘述。
以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (20)

  1. 一种显示装置，包括：
    基板；
    像素定义层，设置于所述基板上，具有多个像素开口；
    表面活性纳米层，设置于所述基板的表面和延伸至所述像素定义层的表面，所述表面活性纳米层包覆多个纳米颗粒；及
    发光层，设置于所述多个像素开口内。
  2. 根据权利要求1所述的显示装置，其中，所述表面活性纳米层包括不连续的多个纳米颗粒，所述纳米颗粒的材料包括导电金属或导电高分子，所述导电金属包括纳米金球或纳米银球。
  3. 根据权利要求1所述的显示装置，其中，所述表面活性纳米层的材料包括聚二氧乙基噻吩和聚苯磺酸盐，所述聚二氧乙基噻吩和聚苯磺酸盐的比例为1:5~8:1，所述聚二氧乙基噻吩的质量分数为25%~40%。
  4. 根据权利要求1所述的显示装置，其中，所述纳米颗粒的最大高度小于所述表面活性纳米层的厚度。
  5. 根据权利要求1所述的显示装置，其中，所述纳米颗粒的最大高度为20nm~50nm，所述表面活性纳米层的厚度为20nm~80nm。
  6. 根据权利要求1所述的显示装置，其中，所述表面活性纳米层的能级与所述发光层的能级相匹配。
  7. 根据权利要求1所述的显示装置，其中，所述表面活性纳米层远离所述基板的一侧表面平整。
  8. 根据权利要求1所述的显示装置，其中，所述基板表面设置有多个阳极，所述像素定义层包括多个挡墙，每个所述挡墙设置于相邻的两个所述阳极间隙之间。
  9. 一种显示装置的制备方法，包括：
    提供一基板，在所述基板上制备像素定义层，所述像素定义层具有多个像素开口；
    在所述基板的表面和延伸至所述像素定义层的表面制备表面活性纳米层，所述表面活性纳米层包覆多个纳米颗粒；及
    在所述多个像素开口内制备发光层，得到所述显示装置。
  10. 根据权利要求9所述的制备方法，其中，制备所述表面活性纳米层采用旋涂、涂布、打印或蒸镀法，制备所述发光层采用打印或蒸镀法。
  11. 根据权利要求9所述的制备方法，其中，制备所述表面活性纳米层包括:
    制备掺有纳米颗粒的第一溶液；
    将所述第一溶液旋涂于所述基板的表面和延伸至所述像素定义层的表面；
    对所述第一溶液进行干燥烘烤去除所述第一溶液中的溶剂，得到多个纳米颗粒；
    制备掺有表面活性剂的第二溶液；
    将所述第二溶液旋涂于所述基板的表面和延伸至所述像素定义层的表面；
    对所述第二溶液进行干燥烘烤去除所述第二溶液中的溶剂，得到所述表面活性纳米层，所述表面活性纳米层包覆所述多个纳米颗粒。
  12. 根据权利要求9所述的制备方法，其中，制备所述表面活性纳米层包括：
    制备掺有纳米颗粒和表面活性剂的第三溶液；
    将所述第三溶液旋涂于所述基板的表面和延伸至所述像素定义层的表面；
    对所述第三溶液进行干燥烘烤去除所述第三溶液中的溶剂，得到所述表面活性纳米层，所述表面活性纳米层包覆所述多个纳米颗粒。
  13. 根据权利要求9所述的制备方法，其中，所述表面活性纳米层包括不连续的多个纳米颗粒。
  14. 根据权利要求9所述的制备方法，其中，制备所述纳米颗粒的材料包括导电金属或导电高分子，所述导电金属包括纳米金球或纳米银球。
  15. 根据权利要求9所述的制备方法，其中，制备所述表面活性纳米层的材料包括聚二氧乙基噻吩和聚苯磺酸盐，所述聚二氧乙基噻吩和聚苯磺酸盐的比例为1:5~8:1，所述聚二氧乙基噻吩的质量分数为25%~40%。
  16. 根据权利要求9所述的制备方法，其中，所述纳米颗粒的最大高度小于所述表面活性纳米层的厚度。
  17. 根据权利要求9所述的制备方法，其中，所述纳米颗粒的最大高度为20nm~50nm，所述表面活性纳米层的厚度为20nm~80nm。
  18. 根据权利要求9所述的制备方法，其中，制备所述表面活性纳米层的材料的能级与制备所述发光层的材料的能级相匹配。
  19. 根据权利要求9所述的制备方法，其中，制备所述表面活性纳米层还包括，对所述表面活性纳米层远离所述基板的一侧表面进行平坦化处理。
  20. 根据权利要求9所述的制备方法，其中，还包括在所述基板表面制备多个阳极，所述像素定义层包括多个挡墙，每个所述挡墙设置于相邻的两个所述阳极间隙之间。
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