WO2022048253A1 - 用于物理气相沉积工艺的靶材初始处理方法与控制器 - Google Patents

用于物理气相沉积工艺的靶材初始处理方法与控制器 Download PDF

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WO2022048253A1
WO2022048253A1 PCT/CN2021/101632 CN2021101632W WO2022048253A1 WO 2022048253 A1 WO2022048253 A1 WO 2022048253A1 CN 2021101632 W CN2021101632 W CN 2021101632W WO 2022048253 A1 WO2022048253 A1 WO 2022048253A1
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current
preset
new target
target material
initial treatment
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PCT/CN2021/101632
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English (en)
French (fr)
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李仁龙
王农展
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长鑫存储技术有限公司
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Priority to US17/445,231 priority Critical patent/US20220074043A1/en
Publication of WO2022048253A1 publication Critical patent/WO2022048253A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Definitions

  • the present disclosure relates to the technical field of semiconductor manufacturing, and in particular, to a target initial processing method and a controller for a physical vapor deposition process.
  • Physical vapor deposition process (Physical Vapor Deposition, PVD) refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions, using gas discharge to evaporate the target and ionize the evaporated material and gas. Acceleration causes the vaporized substances and their reaction products to be deposited on the workpiece.
  • PVD Physical Vapor Deposition
  • the PVD process is required to be implemented in an environment with high vacuum and high cleanliness requirements. Since metal targets are consumables, when the old targets are consumed to the limit, the cavity needs to be opened to replace the new targets, which will inevitably lead to a decrease in the cleanliness in the cavity. . Therefore, it is necessary to use the auxiliary wafer to perform a PVD process for cavity cleaning after each replacement of a new target. When cleaning the cavity, it is necessary to connect the new target that first participates in the PVD process to the positive electrode of the power supply and apply a preset current to attract the argon molecules of the negative electrode to hit the new target and cause the metal particles to fall to the surface of the auxiliary wafer.
  • the purpose of the present disclosure is to provide a target initial treatment method and a target initial treatment device, which are used to at least to a certain extent overcome the problem of arc alarm after a new target is energized due to limitations and defects of the related art.
  • a method for initial treatment of a target material comprising: increasing the on-current on the new target material to a preset current several times from zero.
  • the on-current is paused for a first preset time each time before the on-current is increased.
  • the lengths of the first preset times are the same or different.
  • each time the on-current is increased each of the on-currents is controlled to reach a target current within a second preset time, and each of the second preset times is the same or different.
  • the preset current value is m
  • the step of increasing the on-current on the new target to the preset current in multiple times from zero includes: starting from zero in n times When the on-current is increased, the value of each increase of the on-current is not greater than m/n, where m and n are both positive integers, and n ⁇ 2.
  • the step of increasing the on-current on the new target to the preset current in multiple times from zero includes: in response to the power-on signal of the new target, controlling the constant current source to sequentially output the From the first current to the high current to the nth current until the preset current is output, n ⁇ 2, wherein the duration of each current output from the first current to the nth current is 30s ⁇ 60s.
  • the step of increasing the on-current on the new target material to a preset current in multiple times from zero includes: in response to a power-on signal of the new target material, controlling a connection to the new target material Multiple constant current sources are started in sequence, and the interval between the start-up times of two adjacent constant current sources is 30s to 60s.
  • the working gas is continuously supplied in the process of increasing the on-current to the preset current.
  • the step of increasing the on-current on the new target material to a preset current in multiple times from zero includes: in response to a power-on signal of the new target material, controlling a connection to the new target material
  • the constant voltage source sequentially outputs the first voltage to the nth voltage from low to high until the preset voltage corresponding to the preset current is output, wherein n ⁇ 2, the duration from the first voltage to the nth voltage are equal, the duration is 30s to 60s; or, in response to the power-on signal of the new target, the multiple constant voltage sources connected to the new target are controlled to be activated in sequence, wherein the output voltage of each of the constant voltage sources is the same, The interval between the start-up times of two adjacent constant voltage sources is 30s to 60s.
  • a controller for a physical vapor deposition process for performing any of the above-described methods for initial treatment of a target material.
  • the new target material by increasing the on-current on the new target material to the preset current several times from zero, it is possible to prevent the new target material from being affected by the surface oxide to generate arcs and causing the cavity voltage out of control alarm when it is used for the first time.
  • the cavity cleaning process has failed.
  • Figure 1 is a schematic diagram of the arc after the first use of a new target.
  • FIG. 2 is a schematic diagram of a method for initial treatment of a target in an exemplary embodiment of the present disclosure.
  • FIG. 3 is a schematic diagram of a method for initial treatment of a target in another exemplary embodiment of the present disclosure.
  • FIG. 4 is a schematic diagram of the effect of an embodiment of the present disclosure.
  • Example embodiments will now be described more fully below with reference to the accompanying drawings.
  • Example embodiments can be embodied in various forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art.
  • the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
  • numerous specific details are provided in order to give a thorough understanding of the embodiments of the present disclosure.
  • those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or more of the specific details, or other methods, components, devices, steps, etc. may be employed.
  • well-known solutions have not been shown or described in detail to avoid obscuring aspects of the present disclosure.
  • the target put into use for the first time is referred to as a new target.
  • FIG. 2 is a schematic diagram of an initial treatment method of a target material in an exemplary embodiment of the present disclosure.
  • the on-current on the new target is increased to the preset current Iref several times from zero.
  • the on-current can be increased in n times from zero, and the value of each increase of the on-current can be set to be no greater than m/n, where m and n are both positive integers, and n ⁇ 2.
  • the preset current Iref may be, for example, 5A.
  • the implementation of the PVD process requires the on-current on the target to be 5A.
  • the on-current on the new target can be increased to 5A in 5 times from zero.
  • the on-current can be controlled to be 1A at first, and after a period of time, the on-current can be controlled to be 2A, and so on, the on-current can be controlled from 3A to 4A to 5A for many times.
  • the constant current source in response to the power-on signal of the new target, can be controlled to sequentially output the first current to the nth current from low to high until the preset current is output, n ⁇ 2, wherein the first current to the nth current
  • the duration of the n current is equal, and the duration is 30s to 60s.
  • a new target can also be set to link multiple constant current sources, and each constant current source outputs the same current, so that the on-current can be gradually increased by controlling multiple constant current sources to start up in sequence .
  • the startup time interval of two adjacent constant current sources can be set to be 30s ⁇ 60s, and in one embodiment, the time interval can be controlled to be 30s.
  • the method provided by the present disclosure can also be implemented through the control of the constant voltage source.
  • the resistance value of the resistor corresponding to the constant voltage source needs to be kept unchanged.
  • the constant voltage source connected to the new target can be controlled to sequentially output the first voltage to the nth voltage from low to high until the preset voltage corresponding to the preset current is output, where n ⁇ 2.
  • the durations from the first voltage to the nth voltage are equal, and the durations are 30s ⁇ 60s.
  • the constant current source it is also possible to control the multiple constant voltage sources connected to the new target to start sequentially in response to the power-on signal of the new target, wherein the output voltage of each constant voltage source is the same, and two adjacent constant voltage sources
  • the interval between the start-up time is 30s ⁇ 60s.
  • the amplitude of the on-current waveform corresponding to each value in Figure 2 is a single value, in the actual application process, even if the current is set to a single value, the resistance of the new target itself is affected by the temperature. It will also cause a small change in the waveform amplitude of the on-current, for example, the amplitude increases unidirectionally from low to high (that is, the current waveform has an upward slope in the stage corresponding to each on-current value), which is also in the present disclosure. within the scope of protection.
  • FIG. 3 is a schematic diagram of another embodiment of the present disclosure.
  • the first preset time T1 may be suspended before each increase of the on-current.
  • the first preset time T1 paused before the on-current is increased each time may be the same or different. For example, after outputting an intermediate value of the on-current each time, the output current can be suspended for 30s, and then the current with a larger value in the next stage can be output.
  • each on-current can be controlled to reach the target current within a second preset time T2, and the second preset times are the same or different.
  • the working gas eg, argon gas
  • the continuous flow of argon gas can be set to 50 seem to provide a sufficient power ignition environment.
  • the method shown in FIG. 2 or FIG. 3 can be implemented by modifying the macro instruction of the PVD process controller (burn in macro).
  • a step of gradually increasing the current can be added before the original macro command to slowly increase the current to prevent the arc phenomenon and prevent the new target from being damaged due to high temperature.
  • FIG. 4 is a schematic diagram of an implementation effect of an embodiment of the present disclosure.
  • the methods provided by the embodiments of the present disclosure can be written into the PVD process implementation controller in the form of a burn in macro, so as to implement the methods corresponding to the above embodiments after detecting the installation of a new target material and the power-on signal of the new target material In order to finally apply a preset current to the new target, and finally complete the process of the new target participating in the cavity cleaning through the preset current.
  • the cavity caused by the arc generated by the new target material during the cleaning of the cavity which cannot be solved in the related art, is solved.
  • the problems of interruption of the body cleaning process and downtime for maintenance can effectively reduce the failure rate of the semiconductor manufacturing process and improve the efficiency of the semiconductor manufacturing process.
  • the new target material by increasing the on-current on the new target material to the preset current several times from zero, it is possible to prevent the new target material from being affected by the surface oxide to generate arcs and causing the cavity voltage out of control alarm when it is used for the first time.
  • the cavity cleaning process has failed.

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

基于物理气相沉积工艺的靶材初始处理方法与控制器。靶材初始处理方法包括：从零开始分多次提高新靶材（11）上的导通电流至预设电流。提供的靶材初始处理方法可以避免新靶材（11）参与腔体清洁过程中出现电弧（12）而引起宕机检修。

Description

用于物理气相沉积工艺的靶材初始处理方法与控制器
交叉引用
本公开要求于2020年09月04日提交的申请号为202010921775.8、名称为“用于物理气相沉积工艺的靶材初始处理方法与控制器”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本文。
技术领域
本公开涉及半导体制造技术领域，具体而言，涉及一种用于物理气相沉积工艺的靶材初始处理方法与控制器。
背景技术
物理气相沉积工艺(Physical Vapor Deposition，PVD)是指在真空条件下，采用低电压、大电流的电弧放电技术，利用气体放电使靶材蒸发并使被蒸发物质与气体都发生电离，利用电场的加速作用，使被蒸发物质及其反应产物沉积在工件上。
PVD工艺要求在高真空、高净度要求环境下实施，由于金属靶材属于耗材，在旧靶材消耗到极限的时候需要打开腔体更换新靶材，此时必然会导致腔体内净度降低。因此，需要在每次更换新靶材之后，使用辅助晶圆实施一次PVD工艺以进行腔体清洁。进行腔体清洁时，需要将初次参与PVD工艺的新靶材连接电源正极并施加预设电流，以吸引负极的氩气分子撞击新靶材而使金属粒子落到辅助晶圆表面。
在此过程中，由于新靶材表面常常存在氧化物，通电后常会出现过热而出现如图1所示的电弧12(图1中新靶材为11)，引起电流失控告警(DC power fail alarm)，进而导致工艺终止，影响腔体清洁以及后续的制程。
需要说明的是，在上述背景技术部分公开的信息仅用于加强对本公开的背景的理解，因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。
发明内容
本公开的目的在于提供一种靶材初始处理方法与靶材初始处理装置，用于至少在一定程度上克服由于相关技术的限制和缺陷而导致的新靶材通电后产生电弧报警的问题。
根据本公开实施例的第一方面，提供一种靶材初始处理方法，包括：从零开始分多次提高新靶材上的导通电流至预设电流。
在本公开的一种示例性实施例中，每次提高所述导通电流之前暂停第一预设时间。
在本公开的一种示例性实施例中，各所述第一预设时间的长度相同或不同。
在本公开的一种示例性实施例中，每次提高所述导通电流时，控制各所述导通电流在第二预设时间之内达到目标电流，各所述第二预设时间相同或不同。
在本公开的一种示例性实施例中，所述预设电流值为m，所述从零开始分多次提高 新靶材上的导通电流至预设电流包括：从零开始分n次提高所述导通电流，所述导通电流每次提高的值不大于m/n，其中m、n均为正整数，n≥2。
在本公开的一种示例性实施例中，所述从零开始分多次提高新靶材上的导通电流至预设电流包括：响应新靶材通电信号，控制恒流源顺次输出由低到高的第一电流至第n电流直至输出所述预设电流，n≥2，其中，所述第一电流至所述第n电流中各电流输出的持续时长为30s～60s。
在本公开的一种示例性实施例中，所述从零开始分多次提高新靶材上的导通电流至预设电流包括：响应新靶材通电信号，控制连接所述新靶材的多个恒流源顺次启动，相邻两个恒流源的启动时间之间间隔30s～60s。
在本公开的一种示例性实施例中，在将所述导通电流提高至所述预设电流的过程中持续通入工作气体。
在本公开的一种示例性实施例中，所述从零开始分多次提高新靶材上的导通电流至预设电流包括：响应新靶材通电信号，控制连接所述新靶材的恒压源顺次输出由低到高的第一电压至第n电压直至输出与所述预设电流对应的预设电压，其中，n≥2，第一电压至所述第n电压的持续时长相等，所述持续时长为30s～60s；或者，响应新靶材通电信号，控制连接所述新靶材的多个恒压源顺次启动，其中每个所述恒压源输出的电压相同，相邻两个恒压源的启动时间之间间隔30s～60s。
根据本公开的第二方面，提供一种用于物理气相沉积工艺的控制器，用于执行上任一项所述的靶材初始处理方法。
本公开实施例通过从零开始分多次提高新靶材上的导通电流至预设电流，可以避免新靶材在初次使用时受表面氧化物影响产生电弧、引起腔体电压失控报警导致的腔体清洁过程失败现象。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本公开。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本公开的实施例，并与说明书一起用于解释本公开的原理。显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是新靶材首次使用后出现电弧的示意图。
图2是本公开示例性实施例中靶材初始处理方法的示意图。
图3是本公开另一个示例性实施例中靶材初始处理方法的示意图。
图4是本公开实施例的效果示意图。
具体实施方式
以下现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的范例；相反，提供这些实施方式使得本公开将更加全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中，提供许多具体细节从而给出对本公开的实施方式的充分理解。然而，本领域技术人员将意识到，可以实践本公开的技术方案而省略所述特定细节中的一个或更多，或者可以采用其它的方法、组元、装置、步骤等。在其它情况下，不详细示出或描述公知技术方案以避免喧宾夺主而使得本公开的各方面变得模糊。
此外，附图仅为本公开的示意性图解，图中相同的附图标记表示相同或类似的部分，因而将省略对它们的重复描述。附图中所示的一些方框图是功能实体，不一定必须与物理或逻辑上独立的实体相对应。可以采用软件形式来实现这些功能实体，或在一个或多个硬件模块或集成电路中实现这些功能实体，或在不同网络和/或处理器装置和/或微控制器装置中实现这些功能实体。
下面结合附图对本公开示例实施方式进行详细说明。
本公开实施例中，将首次投入使用的靶材称为新靶材。
如图1所示，在新靶材11首次投入使用时，常常会产生电弧12。这种现象常造成电源失控告警，引起腔体清洁过程中断。本领域的文献均未给出这种问题的产生原因以及解决方法。为了判断问题产生原因，本申请发明人测试了腔体清洁过程的各类指标，进行了多种实验，最终确定这种问题的产生原因是由于新靶材上表面存在氧化物，直接通预设电流会导致新靶材过热，进而引发电弧现象。在进行多次实验后，本申请发明人确定从零开始分多次提高新靶材上的导通电流至预设电流，可以避免电弧的发生和电源失控告警。
图2本公开示例性实施例中靶材初始处理方法的示意图。
参考图2，在本公开实施例中，从零开始分多次提高新靶材上的导通电流至预设电流Iref。
例如，当预设电流的值为m时，可以从零开始分n次提高导通电流，设置导通电流每次提高的值不大于m/n，其中m、n均为正整数，n≥2。
在一个实施例中，预设电流Iref例如可以为5A。在相关技术中，PVD工艺的实施要求靶材上的导通电流为5A。在正式使用预设电流对新靶材实施PVD制程前，可以从零开始分5次提高新靶材上的导通电流至5A。如图2所示，可以首先控制导通电流为1A，持续一段时间后，控制导通电流为2A，以此类推，多次控制导通电流由3A到4A直至5A。
在一个实施例中，可以响应新靶材通电信号，控制恒流源顺次输出由低到高的第一电流至第n电流直至输出预设电流，n≥2，其中，第一电流至第n电流的持续时长相等，持续时长为30s～60s。
在另一个实施例中，还可以设置新靶材链接多个恒流源，每个恒流源输出的电流相同， 从而可以通过控制多个恒流源顺次启动来实现导通电流的逐渐增加。可以设置相邻两个恒流源的启动时间间隔为30s～60s，在一个实施例中，可以控制该时间间隔为30s。
此外，也可以通过恒压源的控制来实现本公开提供的方法，在使用恒压源方案时，需维持恒压源对应的电阻阻值不变。
例如，可以响应新靶材通电信号，控制连接新靶材的恒压源顺次输出由低到高的第一电压至第n电压直至输出与预设电流对应的预设电压，其中，n≥2，第一电压至第n电压的持续时长相等，持续时长为30s～60s。
对应于恒流源实施例，还可以响应新靶材通电信号，控制连接新靶材的多个恒压源顺次启动，其中每个恒压源输出的电压相同，相邻两个恒压源的启动时间之间间隔30s～60s。
可以理解的是，虽然图2中每个值对应的导通电流波形的幅值为单一值，但在实际应用过程中，即使电流设定为单一值，新靶材本身的电阻受温度影响，也会导致导通电流的波形幅值出现小幅变化，例如幅值由低向高单向增加(即在每个导通电流值对应的阶段电流波形出现向上的斜坡)，该情况也在本公开保护范围之内。
通过阶梯状抬升导通电流，且每次抬升之前都让先前电流持续一段时间，可以有效避免新靶材过热产生电弧。
图3是本公开另一个实施例的示意图。
参考图3，在另一个实施例中，可以在每次提高导通电流之前暂停第一预设时间T1。每次提高导通电流之前暂停的第一预设时间T1可以相同也可以不同。例如，可以在每次输出一个中间值的导通电流之后，暂停输出电流30s，然后输出下一阶段更大值的电流。此外，也可以设置在输出较小值的电流之后暂停时间稍短，在输出较大值(接近预设电流Iref)的电流之后延长暂停时间，以给新靶材足够的时间进行表面热应力调整。
此外，如图3所示，还可以控制每次提高导通电流时，控制各导通电流在第二预设时间T2之内达到目标电流，各第二预设时间相同或不同。除了控制每次输出导通电流均直接达到本阶段的目标值，还可以设置在T2时间段内该导通电流达到本阶段的目标值即可，即图3中T2时间段对应的电流波形例如可以为斜坡型。
在图3所示实施例中，同样可以通过多次更改恒流源输出值、多次增加工作的恒流源数量、多次更改恒压源输出值、多次增加工作的恒压源数量等方式实现导通电流的增加，本公开于此不再赘述。
无论使用上述哪种实施例实现导通电阻抬升，在导通电流抬升至预设电流的过程中，均可以持续通入工作气体(例如氩气)。在一个实施例中，可以设置持续通入的氩气流量为50sccm以提供充分的电热(power ignition)环境。
图2或图3所示的方法可以通过修改PVD工艺控制器的宏指令(burn in macro)来实施。可以在原有的宏指令之前追加电流逐步抬升步骤，以缓慢的增大电流来防止电弧现象，防止新靶材因高温导致损坏。
图4是本公开实施例的实施效果示意图。
参考图4，经过多次实验并调节电流参数和时间参数，按图2或图3所示实施例中的方法逐步抬升新靶材上的导通电流后，新靶材顺利参与腔体清洁过程，并且参与后表面清洁，没有电弧痕迹。
本公开实施例提供的方法可以以宏指令(burn in macro)的形式写入PVD工艺实施控制器，从而在检测到新靶材安装、新靶材通电信号后，实现上述各实施例对应的方法以最终对新靶材施加预设电流，最后通过该预设电流完成新靶材参与腔体清洁的过程。
综上所述，本公开实施例通过设置从零开始逐步抬升新靶材上的导通电流至预设电流，解决了相关技术中未能解决的腔体清洁过程中新靶材产生电弧引起腔体清洁过程中断、宕机检修的问题，有效降低了半导体制造过程的故障率，提高了半导体制造工艺的效率。
此外，上述附图仅是根据本发明示例性实施例的方法所包括的处理的示意性说明，而不是限制目的。易于理解，上述附图所示的处理并不表明或限制这些处理的时间顺序。另外，也易于理解，这些处理可以是例如在多个模块中同步或异步执行的。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本申请旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和构思由权利要求指出。
工业实用性
本公开实施例通过从零开始分多次提高新靶材上的导通电流至预设电流，可以避免新靶材在初次使用时受表面氧化物影响产生电弧、引起腔体电压失控报警导致的腔体清洁过程失败现象。

Claims (10)

  1. 一种基于物理气相沉积工艺的靶材初始处理方法，其中，包括：
    从零开始分多次提高新靶材上的导通电流至预设电流。
  2. 如权利要求1所述的靶材初始处理方法，其中，每次提高所述导通电流之前暂停第一预设时间。
  3. 如权利要求2所述的靶材初始处理方法，其中，各所述第一预设时间的长度相同或不同。
  4. 如权利要求1所述的靶材初始处理方法，其中，每次提高所述导通电流时，控制各所述导通电流在第二预设时间之内达到目标电流，各所述第二预设时间相同或不同。
  5. 如权利要求1所述的靶材初始处理方法，其中，所述预设电流值为m，所述从零开始分多次提高新靶材上的导通电流至预设电流包括：
    从零开始分n次提高所述导通电流，所述导通电流每次提高的值不大于m/n，其中m、n均为正整数，n≥2。
  6. 如权利要求1所述的靶材初始处理方法，其中，所述从零开始分多次提高新靶材上的导通电流至预设电流包括：
    响应新靶材通电信号，控制恒流源顺次输出由低到高的第一电流至第n电流直至输出所述预设电流，n≥2，其中，所述第一电流至所述第n电流中各电流输出的持续时长为30s～60s。
  7. 如权利要求1所述的靶材初始处理方法，其中，所述从零开始分多次提高新靶材上的导通电流至预设电流包括：
    响应新靶材通电信号，控制连接所述新靶材的多个恒流源顺次启动，相邻两个恒流源的启动时间之间间隔30s～60s。
  8. 如权利要求1所述的靶材初始处理方法，其中，在将所述导通电流提高至所述预设电流的过程中持续通入工作气体。
  9. 如权利要求1所述的靶材初始处理方法，其中，所述从零开始分多次提高新靶材上的导通电流至预设电流包括：
    响应新靶材通电信号，控制连接所述新靶材的恒压源顺次输出由低到高的第一电压至第n电压直至输出与所述预设电流对应的预设电压，其中，n≥2，第一电压至所述第n电压的持续时长相等，所述持续时长为30s～60s；
    或者，响应新靶材通电信号，控制连接所述新靶材的多个恒压源顺次启动，其中每个所述恒压源输出的电压相同，相邻两个恒压源的启动时间之间间隔30s～60s。
  10. 一种用于物理气相沉积工艺的控制器，其中，用于执行如权利要求1-9任一项所述的靶材初始处理方法。
PCT/CN2021/101632 2020-09-04 2021-06-22 用于物理气相沉积工艺的靶材初始处理方法与控制器 WO2022048253A1 (zh)

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