WO2022044632A1 - センサ装置 - Google Patents

センサ装置 Download PDF

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Publication number
WO2022044632A1
WO2022044632A1 PCT/JP2021/027282 JP2021027282W WO2022044632A1 WO 2022044632 A1 WO2022044632 A1 WO 2022044632A1 JP 2021027282 W JP2021027282 W JP 2021027282W WO 2022044632 A1 WO2022044632 A1 WO 2022044632A1
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WIPO (PCT)
Prior art keywords
electrode
circuit
electrode portion
capacitance
sensor device
Prior art date
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Ceased
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PCT/JP2021/027282
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English (en)
French (fr)
Japanese (ja)
Inventor
英明 杉林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2022545545A priority Critical patent/JP7388568B2/ja
Priority to CN202180053441.6A priority patent/CN115989398B/zh
Publication of WO2022044632A1 publication Critical patent/WO2022044632A1/ja
Priority to US18/109,313 priority patent/US20230194375A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L27/00—Testing or calibrating of apparatus for measuring fluid pressure
    • G01L27/007—Malfunction diagnosis, i.e. diagnosing a sensor defect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/08—Means for indicating or recording, e.g. for remote indication
    • G01L19/12—Alarms or signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/141—Monolithic housings, e.g. molded or one-piece housings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones

Definitions

  • the present invention relates to a sensor device for measuring pressure such as atmospheric pressure and water pressure, and pressure change such as sound wave and ultrasonic wave.
  • the pressure sensor can be manufactured by using MEMS (microelectromechanical system) technology that applies semiconductor manufacturing technology, and for example, an ultra-small sensor of about 0.5 to 2 mm square can be realized.
  • MEMS microelectromechanical system
  • a typical pressure sensor has a capacitor structure having two electrodes, and can measure pressure by detecting a change in capacitance due to a change in ambient pressure.
  • Such a capacitor structure may include air, various gases, an electric insulator, a piezoelectric body, and the like between the electrodes.
  • An object of the present invention is to provide a sensor device capable of reliably detecting the adhesion of foreign matter.
  • the sensor device is The first electrode part held at the reference potential and A second electrode portion provided facing the first electrode portion and displaced according to a change in ambient pressure, and a second electrode portion.
  • a casing member provided on the outside of the second electrode portion and held at a reference potential, and A capacitance detection circuit that amplifies the signal from the second electrode section and detects the capacitance between the first electrode section and the second electrode section in a predetermined sampling cycle.
  • a signal processing circuit that measures the difference ⁇ C of the capacitance values before and after sampling, compares the difference ⁇ C with a predetermined threshold value Cta, and determines whether foreign matter adheres to the casing member when ⁇ C ⁇ Cta. , Equipped with.
  • the sensor device is The first electrode part held at the reference potential and A second electrode portion provided facing the first electrode portion and displaced according to a change in ambient pressure, and a second electrode portion.
  • a casing member provided on the outside of the second electrode portion and held at a reference potential, and A capacitance detection circuit that amplifies the signal from the second electrode portion and detects the capacitance between the first electrode portion and the second electrode portion.
  • the present invention includes a signal processing circuit that compares the detected capacitance value Cs with a predetermined threshold value Ctb and determines that foreign matter adheres to the casing member when Cs> Ctb.
  • the adhesion of foreign matter can be reliably detected.
  • FIG. 4A is a cross-sectional view showing a state in which water droplets are attached to the opening of the sensor device.
  • FIG. 4B is a graph showing the time change of the capacitance to be detected. It is explanatory drawing which shows the generation of parasitic capacitance Cpwd by water droplet W. It is a graph which shows the time change of the difference ⁇ P of the pressure value before and after sampling.
  • the sensor device is The first electrode part held at the reference potential and A second electrode portion provided facing the first electrode portion and displaced according to a change in ambient pressure, and a second electrode portion.
  • a casing member provided on the outside of the second electrode portion and held at a reference potential, and A capacitance detection circuit that amplifies the signal from the second electrode section and detects the capacitance between the first electrode section and the second electrode section in a predetermined sampling cycle.
  • a signal processing circuit that measures the difference ⁇ C of the capacitance values before and after sampling, compares the difference ⁇ C with a predetermined threshold value Cta, and determines whether foreign matter adheres to the casing member when ⁇ C ⁇ Cta. , Equipped with.
  • the casing member provided on the outside of the second electrode portion is held at the reference potential.
  • the parasitic capacitance existing between the casing portion and the second electrode portion changes, typically increases, and the detected capacitance value increases.
  • the signal processing circuit measures the difference ⁇ C of the capacitance value, and determines whether the foreign matter adheres to the casing member when the difference ⁇ C is equal to or exceeds the threshold value Cta. This makes it possible to reliably detect the adhesion of foreign matter.
  • the sensor device is The first electrode part held at the reference potential and A second electrode portion provided facing the first electrode portion and displaced according to a change in ambient pressure, and a second electrode portion.
  • a casing member provided on the outside of the second electrode portion and held at a reference potential, and A capacitance detection circuit that amplifies the signal from the second electrode portion and detects the capacitance between the first electrode portion and the second electrode portion.
  • the present invention includes a signal processing circuit that compares the detected capacitance value Cs with a predetermined threshold value Ctb and determines that foreign matter adheres to the casing member when Cs> Ctb.
  • the casing member provided on the outside of the second electrode portion is held at the reference potential.
  • the parasitic capacitance existing between the first electrode portion and the second electrode portion changes and typically increases, so that the detected capacitance value increases. become.
  • the signal processing circuit determines that foreign matter adheres to the casing member when the capacitance value Cs exceeds the threshold value Ctb. This makes it possible to reliably detect the adhesion of foreign matter.
  • the gain of the capacitance detection circuit and / or the signal processing circuit is adjusted.
  • the detected value changes and may deviate from the dynamic range of the measurement system and saturate to the upper limit value or the lower limit value. Therefore, by reducing or increasing the gain of the pressure detection circuit and / or the signal processing circuit, it becomes possible to maintain the detected value within the dynamic range.
  • an interface circuit for transmitting data between the signal processing circuit and an external host is further provided.
  • an alarm signal to the external host via the interface circuit.
  • the external host when it is determined that foreign matter is attached, it is possible to notify the external host of the foreign matter adhesion state by transmitting an alarm signal to the external host via the interface circuit.
  • the external host can notify the user that there is an error in the information presented to the user, or can stop presenting the information to the user.
  • FIG. 1 is a cross-sectional view showing an example of an electrode structure of the sensor device according to the first embodiment of the present invention.
  • the electrode structure 10 includes a conductive base substrate 11 that functions as a first electrode portion, a membrane 15 that functions as a second electrode portion, and a spacer portion that maintains a gap G between the two. If the base substrate 11 is not conductive, electrodes may be added to the inner surface.
  • the spacer portion includes a guard electrode layer 13 and electrical insulating layers 12 and 14 arranged above and below the guard electrode layer 13. The base substrate 11 and the membrane 15 may be pulled out to an external terminal with electrodes attached on the gap side.
  • the base substrate 10 and the membrane 15 are formed of a conductive material such as polycrystalline Si, amoluas Si, or single crystal Si.
  • the electrically insulating layers 12 and 14 are formed of an electrically insulating material such as silicon oxide.
  • FIG. 2 is a cross-sectional view showing an example of the mechanical configuration of the sensor device according to the first embodiment of the present invention.
  • the sensor device 20 includes a substrate 21, an integrated circuit 30 mounted on the substrate 21, an electrode structure 10 shown in FIG. 1, a casing 22, and the like.
  • the integrated circuit 30 is composed of, for example, an ASIC, FPGA, PLD, CPLD, etc., and has an analog circuit and a programmable digital circuit built-in.
  • the electrode structures 10 can be mounted on the integrated circuit 30 and are electrically connected to each other using bonding wires.
  • the board 21 is provided with a wiring pattern, a power supply terminal, an interface terminal, and the like, and an integrated circuit 30 is mounted on the upper surface thereof and is electrically connected to each other by using a bonding wire.
  • the casing 22 is a tubular member made of a conductive material such as metal, and secures an internal space for accommodating the electrode structure 10 and the integrated circuit 30 in a state of being fixed to the upper surface of the substrate 21.
  • An opening 22a for communicating the outside air and the internal space is provided in the upper part of the casing 22.
  • the interior space may be air alone or may be filled with gel 23 as shown.
  • the gel 23 is used to encapsulate the electrode structure 10 and the integrated circuit 30. Due to the flexibility of the gel 23, external pressure can be transmitted to the electrode structure 10. Further, the electrode structure 10 and the integrated circuit 30 are protected by the waterproofness, water resistance, and corrosion resistance of the gel 23.
  • FIG. 3 is a block diagram showing an example of the electrical configuration of the sensor device according to the first embodiment of the present invention.
  • the integrated circuit 30 includes an amplifier 31, a CDC (Capacitance to Digital Converter) circuit 32, a digital filter 33, a temperature sensor 35, a TDC (Temperature to Digital Converter) circuit 36, a digital filter 37, and a synchronization circuit 40. , A digital correction unit 41, a memory unit 42, a logic unit 43, a digital I / F (interface) unit 44, and the like.
  • a pulse generator that supplies a rectangular wave voltage to the electrode structure 10 is provided between the electrode structure 10 and the amplifier 31.
  • Such an integrated circuit 30 can be implemented by combining a CPU, an arithmetic processor such as a GPU, a memory such as an EEPROM and a RAM, software, and hardware such as an analog circuit.
  • the amplifier 31 converts the charge signal from the electrode structure 10 described above into an analog pressure signal and amplifies it to an appropriate level.
  • the CDC circuit 32 converts the pressure signal from the amplifier 31 into a digital signal.
  • the digital filter 33 filters the digital signal from the CDC circuit 32, removes high frequency noise components, and outputs a low frequency band signal.
  • the temperature sensor 35 includes a PN junction diode, a thermistor, etc., measures the temperature in the vicinity of the electrode structure 10, and outputs an analog temperature signal.
  • the TDC circuit 36 converts the temperature signal from the temperature sensor 35 into a digital signal.
  • the digital filter 37 filters the digital signal from the TDC circuit 36, removes high frequency noise components, and outputs a low frequency band signal.
  • the digital correction unit 41 corrects the digital pressure signal output from the digital filter 33 by using the digital temperature signal from the temperature sensor 35 and the correction coefficient stored in the memory unit 42, and performs temperature correction and linearity correction. ..
  • the synchronization circuit 40 supplies a clock with a predetermined cycle to the CDC circuit 32, the TDC circuit 36, and the digital filters 33 and 37 to synchronize the digital operations.
  • the sampling period of the pressure signal is set based on this clock.
  • the clock may be a fixed single period or may be selectable from a plurality of periods.
  • the memory unit 42 is composed of EEPROM, a polyfuse, RAM, etc., and has a register and a FIFO buffer.
  • the register has a function of storing various digital data such as measurement data and correction coefficient.
  • the FIFO buffer has a function of temporarily storing digital data and adjusting the timing of input and output. By reading digital data all at once, it is possible to reduce the frequency of communication and save power consumption.
  • the digital I / F unit 44 has a function of communicating with an external host and transmits / receives various digital data.
  • the external host is configured as a PC (personal computer), smartphone, portable electronic device, watch, etc., and is composed of a combination of arithmetic processors such as CPU and GPU, memory such as EEPROM and RAM, software, and hardware such as analog circuits. It can and includes similar communication interfaces.
  • the logic unit 43 has a function of storing various programs implemented by software, and for example, controls the overall operation of the integrated circuit 30, a program that performs signal processing on the measurement data stored in the memory unit 42.
  • a program, a program that generates data transmitted to an external host (for example, an alarm), a program that processes data received from an external host, and the like are stored.
  • the sensor device 20 is shipped after calibrating the absolute pressure value using a product tester at the time of characteristic inspection before shipment.
  • the initial value of the sensor output is measured in an environment where the temperature is ⁇ 20 ° C./25 ° C./65 ° C. and the pressure range is 30 kPa to 110 kPa.
  • the correction coefficient aij (i and j are integers) is calculated based on these initial values, and these are stored in the non-volatile memory in the integrated circuit 30.
  • the digital correction unit 41 reads out the correction coefficient aij , performs polynomial calculation using the measured pressure value and temperature value, and performs the following.
  • the final output p (L, T) of is obtained.
  • a ij is a temperature / linearity correction coefficient
  • f (L) is a linearity function
  • f (T) is a temperature function.
  • p (L, T) ⁇ [a ij ⁇ f (L) ⁇ f (T)]... (1)
  • FIG. 4A is a cross-sectional view showing a state in which water droplets W are attached to the opening 22a of the sensor device 20.
  • FIG. 4B is a graph showing the time change of the capacitance C to be detected.
  • FIG. 5 is an explanatory diagram showing the generation of parasitic capacitance Cpwd due to the water droplet W.
  • the casing 22 is grounded and held at the ground potential together with the base substrate 11.
  • the membrane 15 of the sensor device 20 is bent and deformed according to the atmospheric pressure, and the atmospheric pressure can be accurately detected by measuring the capacitance Cs between the electrodes.
  • the capacitance due to the water droplet W ⁇ C with respect to the capacitance Cs between the electrodes. Will be added.
  • the time from time t0 to time t1 is within about 1 ms (milliseconds), and ⁇ C is about 0.1 pF to 10 pF.
  • FIG. 6 is a graph showing the time change of the pressure value difference ⁇ P before and after sampling.
  • the pressure value difference ⁇ P corresponds to the capacitance difference ⁇ C.
  • the difference ⁇ P shows zero, but when the water droplet W adheres at time t0 to t1, ⁇ P increases in a pulse shape and then returns to zero again.
  • the difference ⁇ P and the predetermined threshold value Pth can be compared to determine the adhesion of the water droplet W to the casing 22 when ⁇ P ⁇ Pth.
  • the pressure threshold Pth corresponds to the capacitance threshold Cta.
  • FIG. 7 is a graph showing the time change of the absolute pressure P output by the sensor device 20.
  • the absolute pressure P corresponds to the capacitance Cs between the electrodes.
  • the absolute pressure P shows 100 kPa corresponding to about 1 atm.
  • the absolute pressure P increases significantly due to the increase in the capacitance ⁇ C due to the water droplet W, which deviates from the dynamic range of the measurement system and is the upper limit value. It saturates to UL (here, 130 kPa).
  • UL here, 130 kPa
  • the gain adjustment may be performed by increasing or decreasing the gain of at least one of the blocks of the integrated circuit 30, or by using a program that performs signal processing on the digital data in the logic unit 43.
  • the above-mentioned threshold value Pth and the gain of each block of the integrated circuit 30 can be stored in the memory unit 42 as factory default values and user-set values that can be set by the external host. Therefore, it is possible to change or initialize the threshold value Pth and the gain of the integrated circuit 30 according to a command from the external host.
  • the initial gain before the water droplets are attached and the gain after the water droplets are attached are stored in the memory unit 42 in advance.
  • the gain may be reflected by multiplying the calculation result of the digital correction unit 41.
  • the final output p (L, T, G) after gain adjustment is expressed by the following equation (2).
  • a ij is a temperature / linearity correction coefficient
  • f (L) is a linearity function
  • f (T) is a temperature function
  • G is a gain.
  • the gain is switched to 1/10 before and after the water droplets are attached, so that it is possible to avoid the signal from being saturated due to the influence of the water droplets. ..
  • the initial gain may be returned to the initial gain after the time for the water droplets to evaporate, which makes it possible to resume the normal pressure measurement.
  • the alarm information stored in advance in the memory unit 42 can be transmitted to the external host via the digital I / F unit 44.
  • the alarm information may be in the form of text data or binary data, or may be in the form of an interrupt signal output externally from the hardware.
  • the water droplet detection bit (flag) set at a predetermined address of the memory unit 42 is switched from 0 to 1, and this flag information is used as an external host according to a serial communication standard such as SPI / I2C. May be sent to.
  • the flag information may be transferred to an interrupt register that displays the occurrence of a water droplet adhesion event and read from an external host.
  • an interrupt signal whose output level switches from 0 to 1 may be output via the external output terminal of the integrated circuit 30, and in this case, notification can be made in real time.
  • the external host When the external host receives the alarm from the integrated circuit 30, it can recognize that the sensor device 20 is in an unsteady state. As a result, the external host can notify the user that there is an error in the information presented to the user, or can stop presenting the information to the user.
  • the synchronization circuit 40 may be configured to selectively generate a clock having a plurality of frequencies, for example, a low frequency clock and a high frequency clock.
  • a clock having a plurality of frequencies for example, a low frequency clock and a high frequency clock.
  • pressure measurement at a high-speed rate is performed, and the pressure difference ⁇ P at two consecutive sampling times is monitored.
  • ODR 1000 Hz
  • a pressure difference ⁇ P is obtained every 1 ms. Due to its nature, the external air pressure does not cause a sudden transient change on the order of ms, and a sudden pressure change occurs only when water droplets adhere to it. Therefore, the difference ⁇ P can be compared with the predetermined threshold value Pth to determine the adhesion of the water droplet W to the casing 22 when ⁇ P ⁇ Pth.
  • FIG. 8 is a flowchart showing an example of the operation of the external host and the sensor device.
  • the host starts the sensor control flow in step H1.
  • the host sends a command to the sensor to set the parameters required for the water droplet detection mode.
  • the sensor stores in the memory the parameters (for example, sampling rate, threshold value Pth, enable / disable of gain switching) required for the water droplet detection mode in step S1.
  • step H3 the host sends a command to start the pressure measurement to the sensor.
  • the sensor starts the pressure measurement in step S2, and subsequently stores the pressure data measured in step S3 in the memory.
  • step H4 the host sends a command for reading the pressure data to the sensor and receives the measured pressure data.
  • step H5 the host displays the measured pressure on the screen of the pressure measurement application. Steps S3, H4, and H5 are executed in parallel with other steps by multitasking.
  • the sensor calculates the difference ⁇ P of the pressure data before and after sampling in step S4, and compares the difference ⁇ P with the predetermined threshold value Pth in step S5.
  • the difference ⁇ P is smaller than the threshold value Pth ( ⁇ P ⁇ Pth)
  • the process returns to step S4.
  • the process proceeds to step S7, it is determined that water droplets have adhered to the sensor, and the water droplet detection alarm is activated.
  • the interrupt output terminal may be changed from a low level to a high level, or the status register may be flagged.
  • the sensor confirms whether the gain switching is valid or invalid in step S8. If it is invalid, the process proceeds to step S9 and the measurement is stopped without gain switching. On the other hand, if it is valid, the process proceeds to step S10, the gain is lowered, and the measurement is continued.
  • step H6 the host confirms the water droplet detection alarm from the sensor.
  • step H7 the pressure display on the screen of the pressure measurement application is stopped. At this time, a message that an alarm has occurred may be displayed.
  • step H8 the host sends a command to the sensor to stop the pressure measurement. The sensor stops the pressure measurement in step S11.
  • the present embodiment it is possible to accurately detect the adhesion of water droplets. Further, it is preferable to switch the gain after the water droplets are attached, whereby it is possible to prevent the measured value from being saturated with the upper limit value or the lower limit value of the dynamic range, and the measurement can be continued.
  • the water drop detection alarm can be notified to the user using the host, the user can recognize that the sensor is in an unsteady state.
  • water droplet detection flow can be easily implemented by programming.
  • gain adjustment flow can be easily implemented by programming.
  • alarm activation flow etc. can be easily implemented by programming.
  • it since it can be integrated with a simple logic circuit, it is possible to realize high added value while suppressing an increase in chip area and cost.
  • FIG. 9 is a cross-sectional view showing an example of the electrode structure of the sensor device according to the second embodiment of the present invention.
  • This electrode structure 50 can be used as a pMUT (Piezo Micro-machined Ultrasonic Transducer) that transmits / receives ultrasonic waves.
  • a substrate 51 such as silicon, a support layer 52 such as AlN, and AlN, KNN, A piezoelectric layer 53 such as a PZT, a lower electrode 54 as a first electrode portion, a heater 55, an upper electrode 56 as a second electrode portion, and a protective film 57 such as AlN as a casing member are provided.
  • the substrate 51 is provided with a window 51a through which ultrasonic waves pass.
  • FIG. 10 is a block diagram showing an example of the electrical configuration of the sensor device according to the second embodiment of the present invention.
  • the integrated circuit 60 includes a controller 61 such as a CPU, a charge pump circuit (boost circuit) 62, an amplifier 63, an ADC (Analog to Digital Converter) circuit 64 having band path characteristics, and a DSP (Digital Signal Processor) circuit. It is composed of 65, a reference voltage circuit 66, a memory 67, an I / F (interface) circuit 68 such as I2C, and the like.
  • the upper electrodes 56 are alternately connected to the amplifier 63 or the ADC circuit 64 by a switch circuit.
  • the lower electrode 54 is connected to the reference voltage circuit 66.
  • the bandpass characteristic may be configured by a digital filter after AD conversion by ADC.
  • the piezoelectric layer 53 vibrates due to the piezo effect, and the pressure change of the air causes the piezoelectric layer 53 to vibrate.
  • a certain ultrasonic US is emitted to the outside through the window 51a.
  • the emitted ultrasonic US is reflected by the object and again vibrates the piezoelectric layer 53 through the window 51a.
  • a pulse signal is generated between the lower electrode 54 and the upper electrode 56 due to the piezo effect.
  • the protective film 57 is provided with an opening 57a that exposes the upper electrode 56.
  • a conductive thin film is provided on the upper surface of the protective film 57, and this thin film is held at a reference voltage (for example, a ground potential) together with the lower electrode 54.
  • FIG. 11 is an explanatory diagram showing the parasitic capacitance caused by the adhesion of water droplets.
  • the protective film 57 is provided with an opening 57a that exposes the upper electrode 56.
  • a conductive thin film is provided on the upper surface of the protective film 57, and this thin film is held at a reference voltage (for example, a ground potential) together with the lower electrode 54.
  • Capacitance Cs to be detected exists between the lower electrode 54 and the upper electrode 56.
  • the upper electrode 56 and the conductive thin film are capacitively coupled, and a new parasitic capacitance Cp caused by the water droplet is added in parallel with the capacitance Cs.
  • FIG. 12 is a block diagram showing an example of a water droplet detection circuit of the sensor device according to the second embodiment of the present invention.
  • the integrated circuit 70 includes an amplifier 71, a CDC circuit 72, a digital filter 73, a synchronization circuit 75, a logic unit 74, a digital I / F unit 76, and the like.
  • a pulse generator that supplies a rectangular wave voltage to the electrode structure 50 is provided between the electrode structure 50 and the amplifier 71.
  • Such an integrated circuit 70 can be implemented by combining a CPU, an arithmetic processor such as a GPU, a memory such as an EEPROM and a RAM, software, and hardware such as an analog circuit.
  • the amplifier 71 converts the charge signal from the electrode structure 50 described above into an analog pressure signal and amplifies it to an appropriate level.
  • the CDC circuit 72 converts the pressure signal from the amplifier 71 into a digital signal.
  • the digital filter 73 filters the digital signal from the CDC circuit 72, removes high frequency noise components, and outputs a low frequency band signal.
  • the logic unit 74 has a function of storing various programs implemented by software, for example, a program that performs signal processing on measurement data stored in a memory, a program that controls the overall operation of the integrated circuit 70, and a program that controls the overall operation of the integrated circuit 70.
  • a program that generates data sent to an external host (for example, an alarm), a program that processes data received from an external host, and the like are stored.
  • the synchronization circuit 75 supplies a clock having a predetermined cycle to the CDC circuit 72, the digital filter 73, and the logic unit 74 to synchronize the digital operations.
  • the sampling period is set based on this clock.
  • the digital I / F unit 76 has a function of communicating with an external host and transmits / receives various digital data.
  • the lower electrode 54 is separated from the reference voltage circuit 66, the maximum value Cs_max of Cs is measured in a state where water droplets are not attached in advance, and the value is stored in the memory as a threshold value Ctb.
  • a parasitic capacitance Cp is generated, and the interelectrode capacitance Cs changes to Cs + Cp.
  • the inter-electrode volume Cs is measured periodically. In this case, a rectangular pulse is input to the upper electrode 56 to measure Cs. When Cs> Ctb, it can be determined that water droplets are attached.
  • FIG. 13 is a cross-sectional view showing an example of the electrode structure of the sensor device according to the third embodiment of the present invention.
  • This electrode structure 80 can be used as a MEMS (Micro Electro Mechanical Systems) microphone that converts sound waves into electrical signals.
  • a substrate 81 such as silicon, an electrical insulating layer 82, and conductivity as a second electrode portion are used.
  • a sexual vibrating plate 83, an electrically insulating spacer 84, a conductive back electrode plate 85 as a first electrode portion, and electrically insulating layers 86 and 87 are provided.
  • the electrical insulating layers 86 and 87 are provided with an electrode Da connected to the diaphragm 83 and an electrode Da connected to the back electrode plate 85.
  • the back electrode plate 85 is provided with a large number of through holes 85a through which sound waves pass.
  • FIG. 14 is a block diagram showing an example of the electrical configuration of the sensor device according to the third embodiment of the present invention.
  • the integrated circuit 90 includes a voltage regulator 91, a charge pump circuit 92, a reference voltage circuit 93, an amplifier 94, an ADC (Analog to Digital Converter) circuit 95, a DSP (Digital Signal Processor) circuit 96, and a PDM (Pulse). Density Modulation) circuit 97, I / F (interface) circuit 98 such as I2C, filter circuit 99, buffer circuit 100 and the like.
  • the back electrode plate 85 is connected to a charge pump circuit (boost circuit) 92 and is held at a predetermined DC voltage.
  • the diaphragm 83 is connected to a reference voltage circuit 93 and an amplifier 94, and is held at a predetermined reference voltage.
  • a DC voltage is applied between the diaphragm 83 and the back electrode plate 85.
  • a sound wave arrives from above, passes through the through hole 85a, and vibrates the diaphragm 83.
  • the distance between the electrodes changes, the capacitance Cs between the electrodes also changes, and the voltage of the diaphragm 83 changes.
  • This voltage signal is amplified, converted into a digital signal by the ADC circuit 95, and used as an analog signal via the filter circuit 99. In this way, sound waves, which are changes in air pressure, are converted into electrical signals.
  • an FPC flexible printed substrate
  • a casing 88 made of a conductive material is bonded to an electrically insulating reinforcing plate La. It is fixed via the agent Lb.
  • the casing 88 is provided with an opening 88a through which sound waves pass.
  • the casing 88 is held at a reference voltage (eg, ground potential).
  • Capacitance Cs to be detected exists between the diaphragm 83 and the back electrode plate 85.
  • FIG. 16 is a block diagram showing an example of a water droplet detection circuit of the sensor device according to the third embodiment of the present invention.
  • the integrated circuit 110 includes an amplifier 111, a CDC circuit 112, a digital filter 113, a synchronization circuit 115, a logic unit 114, a digital I / F unit 116, and the like.
  • a pulse generator that supplies a rectangular wave voltage to the electrode structure 80 is provided between the electrode structure 80 and the amplifier 111.
  • Such an integrated circuit 110 can be implemented by combining a CPU, an arithmetic processor such as a GPU, a memory such as an EEPROM and a RAM, software, and hardware such as an analog circuit.
  • the amplifier 111 converts the charge signal from the electrode structure 80 described above into an analog pressure signal and amplifies it to an appropriate level.
  • the CDC circuit 112 converts the pressure signal from the amplifier 111 into a digital signal.
  • the digital filter 113 filters the digital signal from the CDC circuit 112, removes high frequency noise components, and outputs a low frequency band signal.
  • the logic unit 114 has a function of storing various programs implemented by software, for example, a program that performs signal processing on measurement data stored in a memory, a program that controls the overall operation of the integrated circuit 110, and a program that controls the overall operation of the integrated circuit 110.
  • a program that generates data sent to an external host (for example, an alarm), a program that processes data received from an external host, and the like are stored.
  • the synchronization circuit 115 supplies a clock having a predetermined cycle to the CDC circuit 112, the digital filter 113, and the logic unit 114 to synchronize the digital operations.
  • the sampling period is set based on this clock.
  • the digital I / F unit 114 has a function of communicating with an external host and transmits / receives various digital data.
  • the diaphragm 83 is separated from the reference voltage circuit 93, the maximum value Cs_max of Cs is measured in a state where water droplets are not attached in advance, and the diaphragm 83 is stored in the memory as a threshold value Ctb.
  • a parasitic capacitance Cp is generated, and the interelectrode capacitance Cs changes to Cs + Cp.
  • the inter-electrode volume Cs is measured periodically. In this case, a rectangular pulse is input to the upper electrode 56 to measure Cs. When Cs> Ctb, it can be determined that water droplets are attached.
  • water droplets are exemplified as foreign substances, but other than that, various liquids such as oil, mud, and seawater, and various solids such as soil, sand, dust, glass pieces, metal pieces, wood pieces, paper pieces, and cloth scraps are used. It is also possible to detect the adhesion of various biological substances such as insects, hair and mold.
  • the present invention is extremely useful in industry because it can reliably detect the adhesion of foreign matter.
  • Electrode structure 11 Base substrate 12,14 Electrical insulation layer 13 Guard electrode layer 15 Membrane 20 Sensor device 21 Substrate 22,88 Casing 22a Opening 23 Gel 30,60,70,90,110 Integrated circuit 53 Piezoelectric layer 54 Lower electrode 56 Upper electrode 57 Protective film 83 Vibration plate 85 Back electrode plate G Gap W Water droplets

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biomedical Technology (AREA)
  • Measuring Fluid Pressure (AREA)
PCT/JP2021/027282 2020-08-28 2021-07-21 センサ装置 Ceased WO2022044632A1 (ja)

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CN202180053441.6A CN115989398B (zh) 2020-08-28 2021-07-21 传感器装置
US18/109,313 US20230194375A1 (en) 2020-08-28 2023-02-14 Sensor device

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US20240085258A1 (en) * 2022-09-09 2024-03-14 Apple Inc. Active aggressor detection in pressure sensor port
CN119414475B (zh) * 2025-01-07 2025-10-03 江苏帝奥微电子股份有限公司 一种Type-C接口异物检测装置及其检测方法

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CN115989398A (zh) 2023-04-18
JP7388568B2 (ja) 2023-11-29
US20230194375A1 (en) 2023-06-22
CN115989398B (zh) 2025-05-09

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