WO2022019705A3 - 발광 소자, 이의 제조 방법 및 표시 장치 - Google Patents

발광 소자, 이의 제조 방법 및 표시 장치 Download PDF

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Publication number
WO2022019705A3
WO2022019705A3 PCT/KR2021/009550 KR2021009550W WO2022019705A3 WO 2022019705 A3 WO2022019705 A3 WO 2022019705A3 KR 2021009550 W KR2021009550 W KR 2021009550W WO 2022019705 A3 WO2022019705 A3 WO 2022019705A3
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WIPO (PCT)
Prior art keywords
light
semiconductor layer
layer
emitting element
display device
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PCT/KR2021/009550
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English (en)
French (fr)
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WO2022019705A2 (ko
Inventor
안문정
강혜림
김민영
이동언
Original Assignee
삼성디스플레이 주식회사
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Publication of WO2022019705A2 publication Critical patent/WO2022019705A2/ko
Publication of WO2022019705A3 publication Critical patent/WO2022019705A3/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)

Abstract

발광 소자 및 이를 포함하는 표시 장치가 제공된다. 발광 소자는 n형 도펀트로 도핑된 제1 반도체층, p형 도펀트로 도핑된 제2 반도체층, 상기 제1 반도체층과 상기 제2 반도체층 사이에 배치된 발광층, 상기 제2 반도체층 상에 배치된 전극층, 상기 전극층 상에 배치되고 최대 직경이 상기 전극층의 직경보다 작은 절연 구조체 및 상기 제1 반도체층, 상기 발광층, 및 상기 제2 반도체층의 측면을 둘러싸도록 배치된 절연막을 포함한다.
PCT/KR2021/009550 2020-07-24 2021-07-23 발광 소자, 이의 제조 방법 및 표시 장치 WO2022019705A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0092312 2020-07-24
KR1020200092312A KR20220014388A (ko) 2020-07-24 2020-07-24 발광 소자, 이의 제조 방법 및 표시 장치

Publications (2)

Publication Number Publication Date
WO2022019705A2 WO2022019705A2 (ko) 2022-01-27
WO2022019705A3 true WO2022019705A3 (ko) 2022-03-17

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PCT/KR2021/009550 WO2022019705A2 (ko) 2020-07-24 2021-07-23 발광 소자, 이의 제조 방법 및 표시 장치

Country Status (4)

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US (1) US20220028925A1 (ko)
KR (1) KR20220014388A (ko)
CN (1) CN113972339A (ko)
WO (1) WO2022019705A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024060087A1 (zh) * 2022-09-21 2024-03-28 华为技术有限公司 Led器件、发光基板、背光模组、显示面板及显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120122159A (ko) * 2011-04-28 2012-11-07 국민대학교산학협력단 초소형 ｌｅｄ 소자 및 그 제조방법
US20130188659A1 (en) * 2012-01-24 2013-07-25 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser and its manufacturing method, surface emitting semiconductor laser device, optical transmitter, and information processor
US20150380459A1 (en) * 2014-06-27 2015-12-31 Commissariat A L'energie Atomique Et Aux Energies Alternatives Mesa structure diode with approximately plane contact surface
CN209804697U (zh) * 2019-05-13 2019-12-17 厦门三安光电有限公司 一种发光二极管
KR20200029100A (ko) * 2018-09-07 2020-03-18 삼성디스플레이 주식회사 발광 소자, 그의 제조 방법, 및 발광 소자를 구비한 표시 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120122159A (ko) * 2011-04-28 2012-11-07 국민대학교산학협력단 초소형 ｌｅｄ 소자 및 그 제조방법
US20130188659A1 (en) * 2012-01-24 2013-07-25 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser and its manufacturing method, surface emitting semiconductor laser device, optical transmitter, and information processor
US20150380459A1 (en) * 2014-06-27 2015-12-31 Commissariat A L'energie Atomique Et Aux Energies Alternatives Mesa structure diode with approximately plane contact surface
KR20200029100A (ko) * 2018-09-07 2020-03-18 삼성디스플레이 주식회사 발광 소자, 그의 제조 방법, 및 발광 소자를 구비한 표시 장치
CN209804697U (zh) * 2019-05-13 2019-12-17 厦门三安光电有限公司 一种发光二极管

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Publication number Publication date
US20220028925A1 (en) 2022-01-27
CN113972339A (zh) 2022-01-25
KR20220014388A (ko) 2022-02-07
WO2022019705A2 (ko) 2022-01-27

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