WO2022014411A1 - 発光素子用基板 - Google Patents

発光素子用基板 Download PDF

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Publication number
WO2022014411A1
WO2022014411A1 PCT/JP2021/025474 JP2021025474W WO2022014411A1 WO 2022014411 A1 WO2022014411 A1 WO 2022014411A1 JP 2021025474 W JP2021025474 W JP 2021025474W WO 2022014411 A1 WO2022014411 A1 WO 2022014411A1
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WO
WIPO (PCT)
Prior art keywords
substrate
light emitting
emitting element
radiator
glass
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PCT/JP2021/025474
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English (en)
French (fr)
Japanese (ja)
Inventor
勇人 田辺
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Ａｇｃ株式会社
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Priority to JP2022536278A priority Critical patent/JPWO2022014411A1/ja
Publication of WO2022014411A1 publication Critical patent/WO2022014411A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details

Definitions

  • the present invention relates to a substrate for a light emitting element.
  • Light emitting devices such as light emitting diodes (LEDs) and semiconductor laser diodes (LDs) are widely used in automobile lighting fixtures, displays, street lights, and the like.
  • the light emitting element is installed on the light emitting element substrate and is used as a light emitting device.
  • the light emitting element substrate is provided with a through hole from the upper surface (the surface on which the light emitting element is installed) to the lower surface, and the through hole is filled with a radiator.
  • the radiator By providing the radiator on the light emitting element substrate, the heat generated by the light emitting element can be dissipated to the outside of the device.
  • the wiring length can be shortened as compared with the wire bond type light emitting device, and the light emitting device can be miniaturized and highly efficient.
  • the flip-chip bond type has a problem that it is difficult to increase the area of the radiator filled in the light emitting element substrate. This is because in the case of the flip-chip bond type, it is necessary to embed a plurality of radiators in the light-emitting element substrate, and when the distance between the heat-dissipating bodies is close, cracks are likely to occur in the manufacturing process of the light-emitting element substrate. Is.
  • the present invention has been made in view of such a background, and an object of the present invention is to provide a substrate for a light emitting element having better heat dissipation than the conventional one.
  • the present invention is a substrate for a light emitting element.
  • a substrate having a first surface and a second surface facing each other and having a through hole extending from the first surface to the second surface. With the radiator filled in the through hole of the substrate, Have, The first surface of the substrate has a mounting portion on which a light emitting element is mounted.
  • the light emitting element substrate is provided with a light emitting element substrate having an area So of 50% or more of a portion where the radiator overlaps with the mounting portion when viewed from the side of the first surface.
  • FIG. 2 It is sectional drawing which showed the structure of the general flip chip bond type light emitting device roughly. It is a schematic top view of the substrate for a light emitting element according to one Embodiment of this invention. It is a figure which showed schematically the cross section of the substrate for a light emitting element shown in FIG. 2 along the line AA. It is a figure which showed typically the flow of the method of manufacturing the substrate for a light emitting element by one Embodiment of this invention. It is a figure which showed typically one process in the method of manufacturing the substrate for a light emitting element by one Embodiment of this invention. It is a figure which showed typically one process in the method of manufacturing the substrate for a light emitting element by one Embodiment of this invention. It is a figure which showed typically one process in the method of manufacturing the substrate for a light emitting element by one Embodiment of this invention.
  • FIG. 1 schematically shows a cross-sectional configuration of a general flip-chip bond type light emitting device.
  • the light emitting device 1 has a light emitting element substrate 2 and a light emitting element 60.
  • the light emitting element substrate 2 has an upper surface 4 and a lower surface 6, and the light emitting element 60 is installed on the side of the upper surface 4 of the light emitting element substrate 2.
  • the light emitting element substrate 2 has a substrate 10 and a plurality of radiators 18.
  • the substrate 10 has a plurality of through holes penetrating from the upper surface 14 to the lower surface 16, and the radiator 18 is filled in each through hole.
  • the upper surface 14 and the lower surface 16 of the substrate 10 correspond to the upper surface 4 and the lower surface 6 of the light emitting element substrate 2, respectively.
  • the light emitting device 1 further has a plurality of upper electrodes 25 formed on the upper surface 4 of the light emitting element substrate 2 and a lower conductor 35 formed on the lower surface 6.
  • the upper electrode 25 and the lower conductor 35 are arranged so as to be electrically connected to the target radiator 18.
  • the light emitting device 1 has a plurality of electrode bumps 65 on the bottom portion 62 of the light emitting element 60. Each electrode bump 65 is connected to each upper electrode 25.
  • the light emitting device 1 having such a structure can be energized at an arbitrary position of the light emitting element 60. Therefore, in the light emitting device 1, the wiring length can be shortened and the device can be miniaturized.
  • the heat radiating body 18 has a role of dissipating the heat generated by the light emitting element 60 to the outside through the lower conductor 35. Therefore, from the viewpoint of heat dissipation efficiency, when the heat radiating body 18 is viewed from the upper side of the light emitting device 1 (the side of the light emitting element 60) (hereinafter referred to as “top view”), the area of each heat radiating body 18 is made as large as possible. Is desirable.
  • the light emitting element substrate 2 is usually manufactured by heat-treating the green sheet in a state where the through holes provided in the green sheet which is the base of the substrate 10 are filled with the paste for the radiator 18. Since the green sheet (or the substrate 10) and the radiator paste (or the radiator 18) have different coefficients of thermal expansion, stress is generated at the interface between the two during the heat treatment. In particular, when the region of the heat radiating body 18 is expanded, the influence of this stress cannot be ignored, and cracks occur at the interface between the base 10 and the heat radiating body 18 in the step of heating / cooling the base 10.
  • the area of the radiator 18 can be further expanded as will be described in detail below.
  • overlap area the total area of the area where the heat radiating body 18 overlaps with the light emitting element 60
  • FIG. 2 shows a schematic top view of a substrate for a light emitting element according to an embodiment of the present invention. Further, FIG. 3 schematically shows a cross section of the light emitting element substrate shown in FIG. 2 along the line AA.
  • the light emitting device substrate (hereinafter referred to as “first substrate”) 100 has first surfaces 104 and second surfaces facing each other. Has 106. Further, the first substrate 100 has a substrate 130 and a plurality of radiators 158. In the examples shown in FIGS. 2 and 3, two radiator bodies 158 are shown, which are hereinafter represented by 158a and 158b, respectively.
  • the substrate 130 has an upper surface 134 and a lower surface 136 facing each other. Further, the substrate 130 has a plurality of through holes 148a and 148b extending from the upper surface 134 to the lower surface 136.
  • the heat radiating bodies 158a and 158b are filled in the respective through holes 148a and 148b of the substrate 130, and therefore extend from the upper surface 134 to the lower surface 136.
  • the first surface 104 of the first substrate 100 corresponds to the side of the upper surface 134 of the substrate 130, and the second surface 106 of the first substrate 100 corresponds to the side of the lower surface 136 of the substrate 130.
  • the first surface 104 of the first substrate 100 has a mounting portion 165 on which a light emitting element (not shown) is mounted.
  • the mounting portion 165 is indicated by a rectangular broken line.
  • the first substrate 100 is viewed from the side of the first surface 104, that is, the top view of the first substrate 100, the area of the portion where the heat radiating bodies 158a and 158b overlap with the mounting portion 165, that is, over. It has a feature that the lap area So is 50% or more.
  • the overlap area So is, for example, 60% or more, and preferably 65% or more.
  • the first substrate 100 has two rectangular radiator bodies 158a and 158b in a top view.
  • the number of radiators 158 is not particularly limited as long as there are a plurality of radiators.
  • the shape of the radiator body 158 is not particularly limited.
  • the shape of the radiator 158 may be a substantially circular shape, a substantially elliptical shape, or a substantially n-sided polygon (where n is an integer of 3 or more).
  • the heat radiating body 158 may have a shape in which the corner portions are rounded.
  • the heat radiating bodies 158 do not necessarily have to have the same shape, but may have different shapes from each other.
  • the mounting portion 165 has a rectangular shape.
  • the shape of the mounting portion 165 is not particularly limited, and the mounting portion 165 may have, for example, a substantially circular shape, a substantially elliptical shape, or a substantially n-sided polygon (where n is an integer of 3 or more). Further, the mounting portion 165 may have a shape in which the corner portion is rounded.
  • each component included in the light emitting element substrate according to the embodiment of the present invention will be described.
  • the substrate 130 is made of, for example, a material mainly composed of glass.
  • the substrate 130 may be made of a mixed material of glass and ceramics.
  • the composition of the glass is not particularly limited, but a composition containing, for example, SiO 2 , B 2 O 3 , CaO, and Al 2 O 3 is preferable.
  • the glass may further contain at least one of K 2 O and Na 2 O.
  • SiO 2 is a substance that serves as a network former for glass. SiO 2 is preferably contained in the glass in the range of 57 mol% to 65 mol%.
  • the content of SiO 2 is preferably 58 mol% or more, more preferably 59 mol% or more, and particularly preferably 60 mol% or more.
  • the content of SiO 2 is preferably 64 mol% or less, more preferably 63 mol% or less.
  • B 2 O 3 is a substance that serves as a network former for glass.
  • B 2 O 3 is preferably contained in the glass in the range of 13 mol% to 18 mol%.
  • the content of B 2 O 3 is preferably 14 mol% or more, more preferably 15 mol% or more.
  • the content of B 2 O 3 is preferably 17 mol% or less, more preferably 16 mol% or less.
  • CaO is added to enhance the stability of the glass and the precipitateability of crystals, and to lower the glass melting temperature and the glass transition temperature Tg.
  • CaO is preferably contained in the glass in the range of 9 mol% to 23 mol%.
  • the CaO content is preferably 12 mol% or more, more preferably 13 mol% or more, and particularly preferably 14 mol% or more.
  • the CaO content is preferably 22 mol% or less, more preferably 21 mol% or less, and particularly preferably 20 mol% or less.
  • Al 2 O 3 is added to enhance the stability, chemical durability, and strength of the glass.
  • Al 2 O 3 is preferably contained in the glass in the range of 3 mol% to 8 mol%.
  • the content of Al 2 O 3 is preferably 4 mol% or more, more preferably 5 mol% or more.
  • the content of Al 2 O 3 is preferably 7 mol% or less, more preferably 6 mol% or less.
  • K 2 O and Na 2 O lower the glass transition temperature Tg. It is preferable that K 2 O and Na 2 O are contained in the glass in the range of 0.5 mol% to 6 mol% in total.
  • the total content of K 2 O and Na 2 O is preferably 0.8 mol% or more and 5 mol% or less.
  • composition of the glass is not necessarily limited to that consisting only of the above components, and may contain other components. When other components are contained, the total content thereof is preferably 10 mol% or less.
  • the ceramics are not limited to this, and for example, alumina, zirconia, or a mixture of both is used.
  • the amount of glass contained in the substrate 130 is, for example, in the range of 35% by mass to 75% by mass with respect to the entire substrate 130.
  • the amount of glass is preferably in the range of 40% by mass to 70% by mass with respect to the entire substrate 130.
  • the thickness of the substrate 130 is not particularly limited, but is, for example, in the range of 200 ⁇ m to 1200 ⁇ m.
  • the upper surface 134 and / or the lower surface 136 of the substrate 130 preferably has a surface roughness Ra of 0.5 ⁇ m or less. In this case, the concentration of local stress applied to the upper surface 134 and / or the lower surface 136 of the substrate 130 is suppressed, and the occurrence of cracks can be further suppressed.
  • the radiator 158 has thermal and electrical conductivity and contains metal.
  • the radiator 158 may include, for example, at least one of copper, silver, and gold.
  • the total area S h of the radiator 158 is, for example, in the range of 0.5mm 2 ⁇ 1.5mm 2.
  • the total area Sh is represented by the total area of each radiator body 158.
  • the total area S h is a top view of the first substrate 100, and the area of the heat radiating member 158a, represented by the sum of the areas of the heat radiating body 158b.
  • the distance d (see FIG. 2) between the adjacent heat radiating bodies 158 in the top view is, for example, 0.50 mm or less.
  • the distance d is preferably 0.40 mm or less, and more preferably 0.35 mm or less.
  • the distance d is defined as the minimum dimension between adjacent radiators in a top view.
  • the shape of the mounting portion 165 is not particularly limited, and various shapes can be adopted as the mounting portion 165.
  • Area S a of the mounting portion 165 is not particularly limited, for example, in the range of 0.15mm 2 ⁇ 4.00mm 2.
  • Area S a of the mounting portion 165 is preferably in the range of 0.50 mm 2 ⁇ 2.00 mm 2, and more preferably in the range of 0.75mm 2 ⁇ 1.25mm 2.
  • the first substrate 100 is composed of the substrate 130 and the radiator body 158.
  • the first substrate 100 may further have a plurality of upper electrodes 25 as shown in FIG.
  • the upper electrode 25 is installed on the upper surface 134 of the substrate 130 so as to cover the upper part of each radiator body 158a and 158b.
  • the first substrate 100 may further have a plurality of lower conductors 35 as shown in FIG.
  • the lower conductor 35 is installed on the lower surface 136 of the substrate 130 so as to cover the bottom surface of each radiator body 158a and 158b.
  • the upper electrode 25 and the lower conductor 35 may be installed by any conventionally known method.
  • the upper electrode 25 and the lower conductor 35 may be formed by firing the substrate 130 with the conductor paste placed on the upper surface 134 and the lower surface 136 of the substrate 130.
  • the first substrate 100 is provided as a substrate for a single light emitting element. That is, the first substrate 100 has only a set of radiators 158 for one light emitting device.
  • the first substrate 100 may be provided as a substrate for a plurality of light emitting devices.
  • the first substrate 100 may have a substrate 130 portion and a radiator body 158 portion for the first light emitting device, and a substrate 130 portion and a radiator body 158 portion for the second light emitting device.
  • the first substrate 100 is later cut at a predetermined position and used for each light emitting device.
  • the substrate for a light emitting element according to an embodiment of the present invention is used, for example, as a substrate for a light emitting element for a flip-chip bond type light emitting device 1 as shown in FIG.
  • the light emitting element 60 may be of any type.
  • the light emitting element 60 may be, for example, an LED element, an LD, a surface emitting laser diode (VCSEL), or the like.
  • the heat dissipation characteristics can be significantly improved.
  • FIG. 4 schematically shows a flow of a method for manufacturing a substrate for a light emitting element according to an embodiment of the present invention.
  • a method for manufacturing a substrate for a light emitting device is A step of forming a plurality of through holes in a green sheet having an upper surface and a lower surface (S110), and A step (S120) of filling each through hole with a paste for a radiator, The step of installing the relaxation paste layer on the upper surface and the lower surface of the green sheet (S130), The step of heat-treating the green sheet to form a sintered substrate (S140), A step (S150) of polishing the upper and lower surfaces of the sintered substrate to obtain a substrate for a light emitting element.
  • first manufacturing method is A step of forming a plurality of through holes in a green sheet having an upper surface and a lower surface (S110), and A step (S120) of filling each through hole with a paste for a radiator, The step of installing the relaxation paste layer on the upper surface and the lower surface of the green sheet (S130), The step of heat-treating the green sheet to form a sintered substrate (S140), A step (S150)
  • Step S110 First, a green sheet is prepared.
  • the green sheet is composed mainly of glass.
  • the green sheet may further contain ceramics and / or organic binders.
  • the green sheet is produced, for example, through the following steps.
  • the glass powder can be prepared by pulverizing glass having a predetermined composition.
  • the glass powder may have the composition as described above.
  • a dry crushing method or a wet crushing method may be used.
  • the glass is crushed in a solvent. It is preferable to use water as the solvent.
  • a crusher such as a roll mill, a ball mill, or a jet mill can be used.
  • the 50% average particle size (D 50 ) of the glass powder obtained after the pulverization treatment is preferably 0.5 ⁇ m or more and 2 ⁇ m or less.
  • the 50% average particle size (D 50 ) refers to a value obtained by a particle size measuring device by a laser diffraction / scattering method.
  • the D 50 of the glass powder When the D 50 of the glass powder is 0.5 ⁇ m or more, the glass powder does not easily aggregate, is easy to handle, and can be uniformly dispersed. On the other hand, when the D 50 of the glass powder is 2 ⁇ m or less, an increase in the glass softening temperature and insufficient sintering are suppressed.
  • the particle size is adjusted by classification or the like.
  • Ceramic powder production As the ceramic powder, those used in the production of general glass ceramics can be used.
  • the ceramic powder for example, alumina powder, zirconia powder, or a mixture of alumina powder and zirconia powder can be preferably used.
  • the D 50 of the ceramic powder is preferably, for example, 0.5 ⁇ m or more and 4 ⁇ m or less.
  • organic binder polyvinyl butyral and / or acrylic resin can be used.
  • a plasticizer, a dispersant, and / or a solvent may be further added to the green sheet slurry.
  • the plasticizer dibutyl phthalate, dioctyl phthalate, and / or butyl benzyl phthalate and the like can be used.
  • the solvent an organic solvent such as toluene, xylene, 2-propanol, and / or 2-butanol can be used.
  • the mass ratio (glass: ceramics) of the glass powder to the ceramic powder is preferably in the range of 35:65 to 75:25.
  • the obtained green sheet slurry is formed into a sheet by the doctor blade method or the like.
  • the slurry for the green sheet is dried to form the green sheet.
  • the green sheet may be subjected to the next through hole forming step in a state where a plurality of sheets are laminated.
  • a single green sheet and a green sheet configured by laminating a plurality of sheets are simply referred to as "green sheets".
  • the method for forming the through hole is not particularly limited, and the through hole may be formed by a conventional general method.
  • FIG. 5 schematically shows a top view of a green sheet in which a through hole is formed. Further, FIG. 6 schematically shows a cross-sectional view of the green sheet shown in FIG. 5 along the line BB.
  • the green sheet 210 has an upper surface 214 and a lower surface 216. Further, the green sheet 210 is provided with through holes 230a and 230b. The through holes 230a and 230b each penetrate from the upper surface 214 to the lower surface 216 of the green sheet 210.
  • the thickness of the green sheet 210 that is, the total length of the through holes 230a and 230b may be in the range of, for example, 200 ⁇ m to 1200 ⁇ m.
  • Step S120 Next, a paste for a radiator is prepared.
  • the radiator paste is prepared, for example, by mixing metal particles and a vehicle.
  • the metal particles may contain at least one of copper, silver, and gold.
  • Metal particles for example, a coarse range D 50 is 2 [mu] m ⁇ 7 [mu] m, D 50 may be composed of a fine particle in the range of 0.02 [mu] m ⁇ 1 [mu] m.
  • the vehicle contains a resin such as acrylic and / or ethyl cellulose and an organic solvent.
  • the organic solvent may be, for example, ⁇ -terepineol.
  • the prepared heat-dissipating body paste may be filled into the through holes in 230a and 230b by, for example, a screen printing method.
  • FIG. 7 schematically shows a state in which the through holes 230a and 230b are filled with the radiator pastes 240a and 240b, respectively.
  • Step S130 a first relaxation paste layer is installed on the upper surface 214 of the green sheet 210 so as to cover the radiator pastes 240a and 240b. Further, a second relaxation paste layer is installed on the lower surface 216 of the green sheet 210 so as to cover the radiator pastes 240a and 240b.
  • the first relaxation paste layer and the second relaxation paste layer have the form of a paste containing glass.
  • the glass contained in the first relaxation paste layer and the second relaxation paste layer has the coefficient of thermal expansion of the glass contained in the green sheet 210 and the coefficient of thermal expansion of the metal contained in the heat-dissipating pastes 240a and 240b. It has a coefficient of thermal expansion belonging to between.
  • the method of installing the first relaxation paste layer and the second relaxation paste layer is not particularly limited.
  • the first relaxation paste layer and the second relaxation paste layer may be installed by a printing method.
  • the first relaxation paste layer 272 is installed on the upper surface 214 of the green sheet 210, and the second relaxation paste layer 274 is installed on the lower surface 216 of the green sheet 210.
  • the cross section is schematically shown.
  • Step S140 Next, the assembly 290 formed in step S130 is heat-treated in the atmosphere.
  • the temperature of the heat treatment varies depending on the components contained in the assembly 290, but is, for example, in the range of 800 ° C to 1000 ° C.
  • FIG. 9 schematically shows a cross section of a sintered member (hereinafter referred to as “sintered substrate 292”) obtained after heat treatment.
  • the powders contained in the green sheet 210 are sintered together to form the substrate 130.
  • the heat-dissipating body pastes 240a and 240b filled in the through holes 230a and 230b are sintered to form heat-dissipating bodies 258a and 258b, respectively.
  • the first relaxation paste layer 272 and the second relaxation paste layer 274 are sintered to form the first relaxation layer 282 and the second relaxation layer 284, respectively.
  • Step S150 Next, the first relaxation layer 282 and the second relaxation layer 284 are removed by polishing the upper and lower surfaces of the sintered substrate 292.
  • the upper and lower surfaces of the sintered substrate 292 preferably have a surface roughness Ra of 0.5 ⁇ m or less.
  • the first substrate 100 as shown in FIGS. 2 and 3 is manufactured.
  • the first relaxation paste layer 272 is installed on the upper surface 214 of the green sheet 210, and the second relaxation paste layer 274 is installed on the lower surface 216 of the green sheet 210.
  • the solid 290 is heat treated.
  • the green sheet 210 (base 130) is arranged in the cooling process of the assembly 290. ) In-plane contraction is hindered. Similarly, the heat-dissipating body pastes 240a and 240b (heat-dissipating bodies 258a and 258b) are prevented from shrinking in the in-plane direction.
  • heat radiator 158a even if the relatively large total area S h of 158b, in the course of cooling assembly 290, the substrate 130 and the heat radiating body 158a, at the interface between 158b, hardly cracks can do.
  • a substrate for a light emitting element provided with a radiator having a large area can be appropriately manufactured.
  • the distance d between the radiator bodies 158a and 158b may be, for example, in the range of 0.35 mm to 0.50 mm.
  • Examples 1 to 13 are examples, and Example 21 is a comparative example.
  • Example 1 A substrate for a light emitting element was manufactured based on the above-mentioned first manufacturing method.
  • the relaxation paste layer was installed by printing a paste containing glass ceramics. The thickness of the relaxation layer was about 10 ⁇ m in each surface.
  • FIG. 10 schematically shows a top view of the manufactured substrate for a light emitting element (hereinafter referred to as “sample 1”).
  • the substrate 310 was a mixed material of glass and ceramics.
  • the substrate 310 had dimensions of 1.95 mm in length (referred to as L 1a ), 1.45 mm in width (referred to as L 1b ), and 0.5 mm in thickness.
  • the coefficient of thermal expansion of the substrate 310 is about 6 ppm / ° C.
  • the mounting portion 365 has dimensions of 1.00 mm in length (referred to as L 2a ) and 1.00 mm in width (referred to as L 2b).
  • each radiator body 358 has a length (L 3a ) of 0.92 mm and a width W of 0.36 mm. The distance d between both radiators 358 was set to 0.38 mm. Further, each radiator 358 is arranged so that the outer side surface protrudes from the mounting portion 365 by 0.05 mm.
  • Total area S h of the radiator 358 is 0.60 mm 2.
  • the area S a of the mounting portion 365 is 1.00 mm 2.
  • Overlap area S o is a 0.57mm 2.
  • Example 2 to 13 A substrate for a light emitting element was produced by the same method as in Example 1. However, in Examples 2 to 13, as in Example 1, the thickness of the relaxation layer, the total area S h of the radiator, the distance d, and was an overlap area S o and the like are changed.
  • the light emitting element substrates manufactured in Examples 2 to 13 are referred to as Samples 2 to 13, respectively.
  • Example 21 A substrate for a light emitting element was produced by the same method as in Example 1. However, in this example 21, unlike the case of example 1, the relaxation paste layer was not installed. Therefore, the sintered substrate obtained after the heat treatment of the assembly was used as it is as a substrate for a light emitting element.
  • Example 21 the overlap area So was set to 35 mm 2 , and the distance between the two radiators was set to 0.55 mm.
  • the substrate for a light emitting element manufactured in Example 21 is referred to as a sample 21.
  • the number of observations was 120 for each sample.
  • the upper electrode was formed by forming a copper film by an electrolytic plating method.
  • the LED element was fixed on the upper electrode of each sample using a die bond material. As a result, a light emitting device was configured.
  • the thermal resistance of each light emitting device was measured using a thermal resistance measuring device (TH-2167; manufactured by Mine Koon Denki Co., Ltd.).

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PCT/JP2021/025474 2020-07-15 2021-07-06 発光素子用基板 WO2022014411A1 (ja)

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