WO2022013955A1 - ワイヤボンディング装置及び半導体装置の製造方法 - Google Patents

ワイヤボンディング装置及び半導体装置の製造方法 Download PDF

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Publication number
WO2022013955A1
WO2022013955A1 PCT/JP2020/027421 JP2020027421W WO2022013955A1 WO 2022013955 A1 WO2022013955 A1 WO 2022013955A1 JP 2020027421 W JP2020027421 W JP 2020027421W WO 2022013955 A1 WO2022013955 A1 WO 2022013955A1
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Prior art keywords
capillary
ball
wire
bond point
crimping
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Ceased
Application number
PCT/JP2020/027421
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English (en)
French (fr)
Japanese (ja)
Inventor
浩章 吉野
森介 手井
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Shinkawa Ltd
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Shinkawa Ltd
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Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to PCT/JP2020/027421 priority Critical patent/WO2022013955A1/ja
Priority to CN202080009029.XA priority patent/CN114207790A/zh
Priority to US17/435,696 priority patent/US12107070B2/en
Priority to KR1020217033323A priority patent/KR102488240B1/ko
Priority to JP2021539455A priority patent/JP7152079B2/ja
Priority to TW110124530A priority patent/TWI827950B/zh
Publication of WO2022013955A1 publication Critical patent/WO2022013955A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Definitions

  • the present invention relates to the structure of a wire bonding device and a method for manufacturing a semiconductor device using the wire bonding device.
  • the capillary is raised to extend the wire tail, then the capillary is raised to cut the wire tail, and the cut wire tail is bonded onto the crimping ball to form a loop height.
  • a bonding method that keeps the height low has been proposed (see, for example, Patent Document 1).
  • the capillary is moved horizontally to scrape off the ball neck on the crimping ball, and then the capillary is raised to extend the wire tail, and the extended wire tail is used.
  • a method has been proposed in which the loop height is suppressed by pressing the side surface onto the crimping ball a plurality of times and then moving the capillary toward the second bond point (see, for example, Patent Document 2).
  • the cross-sectional area of the wire tail of the pressed portion becomes small, and the loop shape of the wire may be limited.
  • an object of the present invention is to provide a wire bonding apparatus capable of forming a low loop wire having a large degree of freedom in loop shape.
  • the method for manufacturing a semiconductor device of the present invention is a method for manufacturing a semiconductor device in which a first bond point and a second bond point are connected by a wire, and the capillary through which the wire is inserted and a moving mechanism for moving the capillary. After forming a free air ball at the tip of the wire inserted into the capillary, the tip of the capillary is lowered to the crimping height to make the free air ball the first bond point. A ball bonding process of joining to form a crimp ball and a ball neck on the upper side of the crimp ball, and a thin portion having a reduced cross-sectional area between the ball neck and the crimp ball by moving the tip of the capillary horizontally.
  • a thin-walled portion forming step to be formed a wire tail separating step of raising the capillary to extend the wire tail, and then moving the capillary toward the second bond point to separate the wire tail and the crimping ball in the thin-walled portion.
  • the wire tail joining process of lowering the capillary and joining the side surfaces of the separated wire tail onto the crimping ball It is characterized by including.
  • the wire tail is separated from the crimping ball after forming a thin-walled part with a reduced cross-sectional area of the connection part between the ball neck and the crimping ball, so that the wire tail can be separated from the crimping ball with a small tensile load. can.
  • the cut wire tail since the capillary is moved in the direction of the second bond point to separate the wire tail and the crimping ball at the thin wall portion, the cut wire tail enters below the first bond point side of the capillary. Therefore, the side surface of the wire tail can be joined on the crimping ball, and the loop height can be lowered with the wire extending direction as the horizontal direction.
  • the method for manufacturing a semiconductor device of the present invention may include a wire tail bending step of forming a thin portion and then reciprocating the capillary in an arc shape in the direction of the second bond point to bend and deform the wire.
  • the wire Since the wire is bent and deformed in this way, when the wire tail is separated from the crimping ball, the state in which the wire tail is inserted under the first bond point side of the capillary can be maintained, and the wire tail can be reliably used.
  • the sides can be joined onto the crimp ball to reduce the loop height.
  • the capillary in the thin-walled portion forming step, may be raised to a shear height higher than the crimping height to move the capillary in the horizontal direction.
  • the capillary in the thin-walled portion forming step, may be reciprocated in the horizontal direction when forming the thin-walled portion.
  • the cross-sectional area of the connecting portion between the ball neck and the crimping ball can be made as small as possible, and the variation in the cross-sectional area of the connecting portion can be suppressed.
  • the shape of the wire tail extending from the tip of the capillary can be stabilized.
  • the capillary in the wire tail separating step, may be moved diagonally upward toward the second bond point when the wire tail is separated from the crimping ball in the thin-walled portion.
  • the face portion on the side of the first bond point of the capillary is the second bond point of the crimping ball.
  • the wire bonding device of the present invention is a wire bonding device that connects a first bond point and a second bond point with a wire, and is a capillary through which a wire is inserted, a moving mechanism for moving the capillary, and a moving mechanism.
  • the control unit is provided with a control unit that controls the drive of the capacitor, and the control unit forms a free air ball at the tip of the wire inserted through the capillary, and then lowers the tip of the capillary to the crimping height to bond the free air ball to the first bond.
  • a crimp ball and a ball neck on the upper side of the crimp ball are formed by joining to a point, and the tip of the capillary is moved horizontally to form a thin-walled portion having a reduced cross-sectional area between the ball neck and the crimp ball.
  • the capillary is moved in the direction of the second bond point to separate the wire tail and the crimping ball at the thin wall portion. It is characterized in that the side surface of the wire tail separated by lowering the capillary is joined onto the crimping ball.
  • the control unit raises the capillary to a shear height higher than the crimping height and reciprocates the capillary in the horizontal direction to form a thin portion to form a thin portion.
  • the capillary is reciprocated in an arc shape in the direction of the second bond point to bend and deform the wire, and when the wire tail is separated from the crimping ball in the thin-walled portion, the capillary is slanted toward the second bond point.
  • the capillary may be lowered and the side surface of the bent and deformed wire tail may be joined on the end opposite to the second bond point of the crimping ball at the face portion of the capillary.
  • the present invention can provide a wire bonding apparatus capable of forming a low loop wire having a large degree of freedom in loop shape.
  • the wire bonding apparatus 100 of the embodiment includes a base 10, an XY table 11, a bonding head 12, a Z-direction motor 13, a bonding arm 14, an ultrasonic horn 15, and a capillary 20. , A clamper 17, a discharge electrode 18, a bonding stage 19, and a control unit 60.
  • the extending direction of the bonding arm 14 or the ultrasonic horn 15 will be described as the X direction
  • the direction perpendicular to the X direction on the horizontal plane will be described as the Y direction
  • the vertical direction will be described as the Z direction.
  • the XY table 11 is mounted on the base 10 and is mounted on the upper side to move in the XY direction.
  • the bonding head 12 is mounted on the XY table 11 and moves in the XY direction by the XY table 11.
  • a Z-direction motor 13 and a bonding arm 14 driven by the Z-direction motor 13 are housed in the bonding head 12.
  • the Z-direction motor 13 includes a stator 13b.
  • the bonding arm 14 is a rotor whose root portion 14a faces the stator 13b of the Z-direction motor 13 and is rotatably attached around the shaft 13a of the Z-direction motor 13.
  • An ultrasonic horn 15 is attached to the tip of the bonding arm 14 in the X direction, and a capillary 20 is attached to the tip of the ultrasonic horn 15.
  • the ultrasonic horn 15 ultrasonically vibrates a capillary 20 attached to the tip by vibration of an ultrasonic vibrator (not shown).
  • the capillary 20 is provided with a through hole 21 that penetrates in the vertical direction inside, and a wire 16 is inserted through the through hole 21.
  • a clamper 17 is provided on the upper side of the tip of the ultrasonic horn 15. The clamper 17 opens and closes to grip and open the wire 16.
  • a discharge electrode 18 is provided on the upper side of the bonding stage 19.
  • the discharge electrode 18 may be attached to a frame (not shown) provided on the base 10.
  • the discharge electrode 18 is inserted into the capillary 20 to discharge electricity from the wire 16 extending from the tip 25 of the capillary 20 and melt the wire 16 to form a free air ball 40.
  • the bonding stage 19 sucks and fixes the substrate 30 on which the semiconductor chip 34 is mounted on the upper surface, and heats the substrate 30 and the semiconductor chip 34 by a heater (not shown).
  • the root portion 14a of the bonding arm 14 constituting the rotor When the root portion 14a of the bonding arm 14 constituting the rotor is rotated as shown by the arrow 71 in FIG. 1 by the electromagnetic force of the stator 13b of the Z-direction motor 13 of the bonding head 12, it is attached to the tip of the ultrasonic horn 15.
  • the obtained capillary 20 moves in the Z direction as shown by the arrow 72.
  • the bonding stage 19 is moved in the XY direction by the XY table 11. Therefore, the capillary 20 is moved in the XYZ direction by the XY table 11 and the Z direction motor 13. Therefore, the XY table 11 and the Z-direction motor 13 form a moving mechanism 11a for moving the capillary 20 in the XYZ direction.
  • the XY table 11, the Z-direction motor 13, the clamper 17, the discharge electrode 18, and the bonding stage 19 are connected to the control unit 60 and are driven based on the command of the control unit 60.
  • the control unit 60 adjusts the position of the capillary 20 in the XYZ direction by the moving mechanism 11a composed of the XY table 11 and the Z direction motor 13, opens and closes the clamper 17, drives the discharge electrode 18, and the bonding stage 19. Control the heating.
  • the control unit 60 is a computer including a CPU 61, which is a processor that processes information internally, and a memory 62 that stores an operation program, operation data, and the like.
  • FIG. 2 is a diagram showing an example of the tip portion of the capillary 20.
  • the capillary 20 is formed with a through hole 21 penetrating in the direction of the center line 24.
  • the wire 16 is inserted into the through hole 21. Therefore, the inner diameter d1 of the through hole 21 is larger than the outer diameter d2 of the wire 16 (d1> d2).
  • the lower end of the through hole 21 extends in a conical shape. This conical tapered portion is called a chamfer portion 22.
  • the maximum diameter (that is, the diameter at the lowermost end) of this conical space is called the chamfer diameter d3.
  • the lower end surface of the capillary 20 is a face portion 23 that presses the free air ball 40 shown in FIG.
  • the face portion 23 may be a flat horizontal surface or an inclined surface that moves upward as it approaches the outside.
  • the width of the face portion 23, that is, the distance between the chamfer portion 22 and the outer circumference of the lower end of the capillary 20 is referred to as "face width W".
  • the point above the center line 24 at the lower end of the capillary 20 is referred to as the tip 25 of the capillary 20.
  • the free air ball 40 becomes a face. It is pressed by the portion 23 and flattened to form a flat cylindrical crimping ball 41 having a diameter d5 and a thickness hb. Further, a part of the metal forming the free air ball 40 enters the through hole 21 from the chamfer portion 22 and is connected to the conical portion 42a connected to the upper side of the crimping ball 41 and the circle connected to the upper side of the conical portion 42a. A ball neck 42 composed of a columnar portion 42b is formed.
  • FIG. 3 is an image diagram of the loop wire 52 formed by the wire bonding device 100.
  • a plurality of pads 35 are arranged on the semiconductor chip 34, and a plurality of leads 31 are arranged on the substrate 30.
  • the wire bonding apparatus 100 connects the first bond point P1 located on the pad 35 and the second bond point P2 located on the lead 31 with a loop wire 52.
  • a first bond portion 50 formed by pressing one end of the wire 16 against the pad 35 is formed, and the loop wire 52 drawn out from the first bond portion 50 is a second bond. Extends to point P2.
  • a second bond portion 51 formed by pressing the other end of the loop wire 52 against the lead 31 is formed.
  • the second bond portion 51 is usually a stitch bond in which the loop wire 52 is pressed against the lead 31 and crushed.
  • the operation of forming the first bond portion 50, the loop wire 52, and the second bond portion 51 of the wire bonding apparatus 100 will be described with reference to FIGS. 4 to 9B.
  • the direction approaching the second bond point P2 when viewed from the first bond point P1 is referred to as the "forward direction", and the direction away from the second bond point P2 or the second bond when viewed from the first bond point P1.
  • the direction opposite to the point P2 is called the "reverse direction”.
  • the reference numeral “F” in each figure indicates a forward method, and the reference numeral “R” indicates a reverse direction.
  • the arrows 81 to 91 shown in FIG. 4 correspond to the arrows 81 to 91 shown in FIGS. 5 to 9B.
  • the CPU 61 which is the processor of the control unit 60, first opens the clamper 17 to drive and control the XY table 11 and the Z-direction motor 13 to discharge the tip 25 of the capillary 20. Move to the vicinity of the electrode 18. Then, the CPU 61 generates a discharge between the discharge electrode 18 and the wire 16 extending from the tip 25 of the capillary 20, and forms the wire 16 extending from the tip 25 of the capillary 20 into a free air ball 40.
  • the CPU 61 executes a ball bonding step as shown in FIG.
  • the CPU 61 aligns the XY coordinates of the center line 24 of the capillary 20 with the XY coordinates of the center line 36 of the first bond point P1.
  • the tip 25 is lowered toward the first bond point P1 to the point a.
  • the height h1 from the upper surface of the pad 35 to the tip 25 of the capillary 20, that is, the height h1 from the upper surface of the pad 35 to the point a is set to the target value of the thickness hb of the crimping ball 41 (see FIG. 2). It is decided based on.
  • this height h1 is referred to as "crimping height h1".
  • the free air ball 40 is pressed onto the pad 35 by the face portion 23 of the capillary 20.
  • ultrasonic vibration may be applied to the tip 25 of the capillary 20 via the ultrasonic horn 15.
  • the capillary 20 presses the free air ball 40 onto the pad 35, the face portion 23 and the chamfer portion 22 form the free air ball 40 with the crimping ball 41 and the ball, as described above with reference to FIG. Molded into the neck 42.
  • the CPU 61 ends the ball bonding process when the crimping ball 41 and the ball neck 42 are formed.
  • the CPU 61 executes the thin-walled portion forming step as shown in FIGS. 6A to 6D.
  • the CPU 61 keeps the clamper 17 open.
  • the CPU 61 drives the Z-direction motor 13 as shown in FIG. 6A to slightly raise the tip 25 of the capillary 20 to the point b as shown by the arrow 82 in FIGS. 4 and 6A by the height ⁇ hb.
  • the height of the tip 25 of the capillary 20 is set to the height h2.
  • the height h2 is referred to as "shear height h2".
  • the shear height h2 is the height between the upper end surface of the crimping ball 41 and the upper end surface of the ball neck 42, and is the height at which the tip 25 of the capillary 20 is located on the side surface of the ball neck 42.
  • the CPU 61 drives the XY table 11 while maintaining the height of the tip 25 of the capillary 20 at the shear height h2, as shown by the arrows 83 shown in FIGS. 4 and 6B.
  • the capillary 20 is moved horizontally to the point c in the forward direction toward the second bond point P2 by a distance ⁇ xc.
  • the center line 24 of the capillary 20 is located closer to the second bond point P2 than the center line 36 of the first bond point P1.
  • the CPU 61 drives the XY table 11 in the opposite direction to FIG. 6B while maintaining the height of the tip 25 of the capillary 20 at the shear height h2, and FIGS.
  • the capillary 20 is horizontally moved to the point d in the reverse direction from the second bond point P2 toward the first bond point P1 by a distance ⁇ xd. Since ⁇ xd is larger than ⁇ xc shown in FIG. 6B, the center line 24 of the capillary 20 is on the reverse side of the first bond point P1 as shown in FIG. 6C.
  • the CPU 61 drives the XY table 11 while keeping the height of the tip 25 of the capillary 20 at the shear height h2, and drives the capillary 20 to the point e as shown by the arrow 85 shown in FIGS. 4 and 6B. 2
  • the shear section 43 on the forward side appears in the vicinity of the lower end surface of the ball neck 42. There is a slight gap between the sheared section 43 and the upper surface of the end portion 45 on the opposite side (reverse side) of the second bond point P2 of the crimping ball 41.
  • a thin connecting portion 46 connecting the ball neck 42 and the crimping ball 41 is formed between the shearing section 44 on the forward side and the shearing section 43 on the reverse side.
  • the connecting portion 46 is a thin portion having a smaller cross-sectional area than the wire 16.
  • the cross-sectional area of the connection portion 46 is made as small as possible. At the same time, it is possible to suppress variations in the size of the cross-sectional area of the connecting portion 46.
  • the CPU 61 executes the wire tail bending step as shown in FIGS. 7A to 7C.
  • the CPU 61 drives the Z-direction motor 13 as shown in FIG. 7A to raise the tip 25 of the capillary 20 to the point f as shown by the arrow 86 in FIGS. 4 and 7A, and raise the height of the tip 25 of the capillary 20.
  • the height h3 is referred to as "moving height h3".
  • the moving height h3 is higher than the shear height h2.
  • the CPU 61 moves the tip 25 of the capillary 20 in an arc shape from the point f to the point g as shown by the arrows 87 in FIGS. 4 and 7B.
  • the arcuate movement may be carried out to a point g at a height h4 along an arc whose radius is the distance between the point f and the point e centered on the point e shown in FIG. 7A.
  • the wire tail 47 is bent forward from the connecting portion 46, and the lower side surface is bent toward the upper end surface of the crimping ball 41.
  • the CPU 61 moves the tip 25 of the capillary 20 in an arc shape from the point g to the point f as shown by the arrow 88 in FIGS. 4 and 7C, contrary to FIG. 7B, to move the tip 25 of the capillary 20 in an arc shape.
  • the position of is returned to the point f.
  • the wire tail 47 is curved from the connecting portion 46 toward the forward side and then curved toward the reverse side.
  • the CPU 61 executes the wire tail disconnection step as shown in FIG.
  • the CPU 61 closes the clamper 17 and drives the XY table 11 and the Z-direction motor 13 to move the tip 25 of the capillary 20 diagonally upward toward the second bond point P2. It is moved in the direction to the point h at the height h5. Due to this movement, the wire tail 47 extending from the tip 25 of the capillary 20 is deformed so as to extend diagonally upward from the connecting portion 46 toward the second bond point P2. Further, since the CPU 61 closes the clamper 17 at the time of movement, the connection portion 46 is pulled diagonally upward by the capillary 20 and the clamper 17 toward the second bond point P2 due to the movement.
  • the connecting portion 46 is broken to form a crimp ball side fracture surface 48 and a wire tail side fracture surface 49.
  • the wire tail 47 extends diagonally downward from the tip 25 of the capillary 20 toward the first bond point P1 toward the reverse side, and the capillary 20 It wraps around to the lower side of the face portion 23 on the reverse side of.
  • the CPU 61 executes the wire tail joining step as shown in FIGS. 9A and 9B.
  • the CPU 61 drives the XY table 11 and the Z-direction motor 13 to raise the tip 25 of the capillary 20 from the point h to the point i, and then moves from the point i to the reverse direction. Move towards.
  • the position of the tip 25 of the capillary 20 is positioned so that the face portion 23 on the first bond point side (reverse side) of the capillary 20 is above the end portion 45 on the reverse side of the crimping ball 41. Move to point j at height h6.
  • the CPU 61 lowers the face portion 23 on the reverse side of the capillary 20 toward the end portion 45 on the reverse side of the crimping ball 41 to the point k as shown by the arrow 91 shown in FIGS. 4 and 9B.
  • the side surface of the wire tail 47 extending diagonally downward from the tip 25 of the capillary 20 toward the reverse side at the face portion 23 on the reverse side of the capillary 20 is the reverse side of the crimping ball 41. Press onto the end 45.
  • the wire tail 47 is joined onto the end portion 45 to form the first bond portion 50.
  • the height h7 from the upper surface of the pad 35 to the tip 25 of the capillary 20, that is, the height h7 from the upper surface of the pad 35 to the point k is determined based on the target value of the thickness of the first bond portion 50. ..
  • the first bond portion 50 is joined onto the reverse end 45 of the crimp ball 41, and the side of the second bond point P2 is along the shear section 44 above the crimp ball 41. Extends horizontally toward the second bond point P2.
  • the CPU 61 executes the stitch bonding step.
  • the CPU 61 opens the clamper 17 and raises the capillary 20 as shown by the arrow 92 shown in FIG. 4, extends the loop wire 52 from the tip 25 of the capillary 20, and then shows the arrow 93 of the alternate long and short dash line shown in FIG.
  • the tip 25 of the capillary 20 is looped so that the position of the center line 24 of the capillary 20 is aligned with the position of the center line 37 (see FIG. 3) of the second bond point P2.
  • the tip 25 of the capillary 20 is pressed onto the lead 31 of the substrate 30 and the side surface of the loop wire 52 is stitch-bonded onto the lead 31 to form the second bond portion 51.
  • the loop wire 52 is formed on the sheared cross section 44 of the crimping ball 41 from the first bond portion 50 joined on the end portion 45 on the reverse side of the crimping ball 41.
  • the shape extends horizontally toward the second bond point P2 beyond the shape.
  • looping locus of the tip 25 of the capillary 20 is described in a simplified manner in FIG. 4, various routes may be used depending on the shape of the loop wire 52 to be formed.
  • the CPU 61 closes the clamper 17 and raises the capillary 20 to cut the wire 16.
  • the wire bonding apparatus 100 connects the first bond point P1 and the second bond point P2 as shown in FIG. 3 by the first bond portion 50, the loop wire 52, and the second bond portion 51. do.
  • the cross-sectional area of the connecting portion 46 between the ball neck 42 and the crimping ball 41 is reduced by the thin-walled portion forming step, and then the wire tail 47 is bent and deformed.
  • the capillary 20 is moved toward the second bond point P2 to cut the wire tail 47 from the crimping ball 41, so that the cut wire tail 47 has entered the lower side of the face portion 23 on the reverse side of the capillary 20. Can be retained. Therefore, when the side surface of the wire tail 47 is joined onto the crimping ball 41 to form the first bond portion 50, the second bond point side of the first bond portion 50 is in the horizontal direction along the crimping ball 41. Can be extended toward the second bond point P2. Therefore, as shown in FIGS. 3 and 10, the loop wire 52 can be formed so as to horizontally face the second bond point P2 from above the crimping ball 41, and the height of the loop wire 52 can be lowered. Can be done.
  • the second bond point side of the first bond portion 50 is the crimp ball 41 without pressing the side surface of the wire tail 47 onto the crimp ball 41 multiple times. It can be extended horizontally toward the second bond point P2 along the top. Therefore, since the cross-sectional area of the connection portion between the first bond portion 50 and the loop wire 52 can be made larger than that of the prior art, the tip 25 of the capillary 20 can be freely moved in the stitch bonding step, and the loop wire 52 can be freely moved. The degree of freedom in the shape of the can be increased.
  • the tip 25 of the capillary 20 in the thin-walled portion forming step, is horizontally reciprocated toward the forward side and the reverse side to minimize the cross-sectional area of the connecting portion 46. , The variation in the size of the cross-sectional area of the connecting portion 46 is suppressed. Therefore, in the wire tail disconnection step, the breaking load between the wire tail 47 and the connecting portion 46 is small and constant, so that when the connecting portion 46 breaks, the lower side of the face portion 23 on the reverse side of the capillary 20 The shape of the wire tail 47 that enters does not vary, and the shape becomes stable. As a result, the shape of the first bond portion 50 formed on the end portion 45 on the reverse side of the crimp ball 41 becomes constant, and stable wire bonding can be performed.
  • the tip 25 of the capillary 20 is moved diagonally upward toward the second bond point P2, so that the wire tail 47 is crimped with the cut wire tail 47. It is possible to prevent the balls 41 from coming into contact with each other and being rejoined, and it is possible to improve the stability of wire bonding.
  • the breaking load between the wire tail 47 and the connecting portion 46 is further reduced, and the capillary 20 is moved in the horizontal direction to cut the wire tail 47. You may do it.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
PCT/JP2020/027421 2020-07-15 2020-07-15 ワイヤボンディング装置及び半導体装置の製造方法 Ceased WO2022013955A1 (ja)

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PCT/JP2020/027421 WO2022013955A1 (ja) 2020-07-15 2020-07-15 ワイヤボンディング装置及び半導体装置の製造方法
CN202080009029.XA CN114207790A (zh) 2020-07-15 2020-07-15 打线接合装置及半导体装置的制造方法
US17/435,696 US12107070B2 (en) 2020-07-15 2020-07-15 Wire bonding apparatus and method for manufacturing semiconductor device
KR1020217033323A KR102488240B1 (ko) 2020-07-15 2020-07-15 와이어 본딩 장치 및 반도체 장치의 제조 방법
JP2021539455A JP7152079B2 (ja) 2020-07-15 2020-07-15 ワイヤボンディング装置及び半導体装置の製造方法
TW110124530A TWI827950B (zh) 2020-07-15 2021-07-05 打線接合裝置及半導體裝置的製造方法

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060054665A1 (en) * 2004-09-08 2006-03-16 Kulicke And Soffa Industries Inc. Methods for forming conductive bumps and wire loops
JP2006222128A (ja) * 2005-02-08 2006-08-24 Shinkawa Ltd ワイヤボンディング方法
JP2006278407A (ja) * 2005-03-28 2006-10-12 Renesas Technology Corp 半導体装置の製造方法
JP2019176111A (ja) * 2018-03-29 2019-10-10 ヤマハモーターロボティクスホールディングス株式会社 ワイヤボンディング装置、半導体装置の製造方法、および、半導体装置

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JPS4860128U (enExample) 1971-11-09 1973-07-31
JP3854232B2 (ja) * 2003-02-17 2006-12-06 株式会社新川 バンプ形成方法及びワイヤボンディング方法
JP2004247674A (ja) * 2003-02-17 2004-09-02 Shinkawa Ltd ワイヤボンディング方法
KR100536898B1 (ko) 2003-09-04 2005-12-16 삼성전자주식회사 반도체 소자의 와이어 본딩 방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060054665A1 (en) * 2004-09-08 2006-03-16 Kulicke And Soffa Industries Inc. Methods for forming conductive bumps and wire loops
JP2006222128A (ja) * 2005-02-08 2006-08-24 Shinkawa Ltd ワイヤボンディング方法
JP2006278407A (ja) * 2005-03-28 2006-10-12 Renesas Technology Corp 半導体装置の製造方法
JP2019176111A (ja) * 2018-03-29 2019-10-10 ヤマハモーターロボティクスホールディングス株式会社 ワイヤボンディング装置、半導体装置の製造方法、および、半導体装置

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US20220328450A1 (en) 2022-10-13
JP7152079B2 (ja) 2022-10-12
KR102488240B1 (ko) 2023-01-13
JPWO2022013955A1 (enExample) 2022-01-20
KR20220009937A (ko) 2022-01-25

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