WO2022009970A1 - 電力変換回路および電力変換システム - Google Patents

電力変換回路および電力変換システム Download PDF

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Publication number
WO2022009970A1
WO2022009970A1 PCT/JP2021/025889 JP2021025889W WO2022009970A1 WO 2022009970 A1 WO2022009970 A1 WO 2022009970A1 JP 2021025889 W JP2021025889 W JP 2021025889W WO 2022009970 A1 WO2022009970 A1 WO 2022009970A1
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Prior art keywords
power conversion
diode
switching element
conversion circuit
gallium oxide
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PCT/JP2021/025889
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English (en)
French (fr)
Japanese (ja)
Inventor
英人 北角
佑典 松原
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Flosfia Inc
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Flosfia Inc
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Priority to EP21838874.2A priority Critical patent/EP4181207A4/en
Priority to CN202180048967.5A priority patent/CN115836468A/zh
Priority to JP2022535397A priority patent/JPWO2022009970A1/ja
Publication of WO2022009970A1 publication Critical patent/WO2022009970A1/ja
Priority to US18/094,540 priority patent/US20230179095A1/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0051—Diode reverse recovery losses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H02M1/4225—Arrangements for improving power factor of AC input using a non-isolated boost converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/06—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a power conversion circuit and a power conversion system.
  • gallium oxide Ga 2 O 3
  • semiconductor devices for power such as inverters and converters are attracting attention. It is expected to be applied to.
  • the gallium oxide can control the bandgap by mixing indium and aluminum individually or in combination, and constitutes an extremely attractive material system as an InAlGaO-based semiconductor. ..
  • Patent Document 1 as a free wheel diode of the switching circuit configured to include a Schottky diode and transistor, the use of Schottky diode comprising a ⁇ -Ga 2 O 3 based semiconductor is described.
  • problems and the like when actually incorporating it into a switching circuit have not been sufficiently studied.
  • problems such as low thermal conductivity of the gallium oxide substrate, and it is not something that can be used industrially.
  • any one of a wide bandgap semiconductor element (silicon carbide, gallium nitride, gallium oxide or diamond) is used for a part or all of the diode or the switching element in the switching unit of the AC-DC converter. It is described that the type or combination) is used. However, the problems of each semiconductor element have not been examined, and the radiation noise has not been sufficiently satisfied. Further, especially when gallium oxide is used, there is also a problem of heat generation in the entire circuit.
  • An object of the present invention is to provide a power conversion circuit in which radiation noise is suppressed.
  • the present inventors have a switching element that opens and closes the input voltage via the reactor, and a voltage including at least the electromotive force generated from the reactor when the switching element is turned off.
  • the commutation diode is provided with at least a commutation diode that conducts the current flowing in the direction of the electromotive force, and the commutation diode is a power conversion circuit including a gallium oxide-based Schottky barrier diode, and the commutation diode is a Si-based diode or a SiC-based diode. It was found that the radiation noise was reduced as compared with the one using a diode, and it was found that such a power conversion circuit can solve the above-mentioned conventional problems at once.
  • a switching diode that opens and closes the input voltage via a reactor and a commutation diode that conducts a current flowing in the direction of the electromotive force by a voltage including at least an electromotive force generated from the reactor when the switching element is turned off.
  • a power conversion circuit comprising, at least, the commutation diode including a gallium oxide-based Schottky barrier diode.
  • the gallium oxide-based Schottky barrier diode contains at least an n-type semiconductor layer, and the carrier concentration of the n-type semiconductor layer is 2.0 ⁇ 10 17 / cm 3 or less.
  • a power conversion system comprising at least a commutation diode for conducting a current flowing in the direction of the electromotive force and an output capacitor, and a gallium oxide-based Schottky barrier diode is used as the commutation diode. ..
  • the switching element includes a gallium oxide-based MOSFET, a gallium oxide-based IGBT, a gallium nitride-based HEMT, a SiC-based MOSFET, or a SiC-based IGBT.
  • the gallium oxide-based Schottky barrier diode contains at least an n-type semiconductor layer, and the carrier concentration of the n-type semiconductor layer is 2.0 ⁇ 10 17 / cm 3 or less. 14] The power conversion system according to any one of.
  • the power conversion circuit of the present invention has reduced radiation noise.
  • the power conversion circuit of the present invention has a switching element that opens and closes a voltage input from an input power supply via a reactor, and an electromotive force generated from the reactor when the switching element is turned off due to the bias of the switching element during the on period. It is characterized by including at least a commutation diode that conducts a current flowing in the direction of the electromotive force by a voltage included at least, and the commutation diode includes a gallium oxide-based Schottky barrier diode. In the embodiment of the present invention, it is preferable that the commutation diode is arranged on the output side of the reactor.
  • the power conversion circuit further includes a capacitor, and a current flowing in the direction of the electromotive force by a voltage including at least the electromotive force generated from the reactor is transmitted through the commutation diode. It is preferable to have a configuration for supplying the capacitor. Further, the power conversion circuit is not particularly limited as long as the object of the present invention is not impaired, but in the embodiment of the present invention, a converter circuit is preferable, and a boost converter circuit is more preferable.
  • the switching element is not particularly limited and may be a MOSFET or an IGBT as long as the object of the present invention is not impaired.
  • the switching element include gallium oxide-based MOSFETs, gallium oxide-based IGBTs, gallium nitride-based HEMTs, SiC-based MOSFETs or SiC-based IGBTs, Si-based MOSFETs, Si-based IGBTs, and the like.
  • the switching element is a gallium oxide-based MOSFET, a gallium oxide-based IGBT, a gallium nitride-based HEMT, a SiC-based MOSFET, or a SiC-based IGBT.
  • the switching element includes a freewheel diode. The freewheel diode may be built in the switching element or may be externally attached.
  • the commutation diode is long as long as it conducts a current flowing in the direction of the electromotive force by a voltage including at least an electromotive force generated from the reactor when the switching element is turned off by urging the switching element during the on period.
  • the power conversion circuit further includes an output capacitor (smoothing capacitor) so that the current is supplied to the output capacitor.
  • the commutation diode is arranged so as to prevent the charge accumulated in the output capacitor from flowing back, because noise countermeasures can be better taken. ..
  • the gallium oxide-based Schottky barrier diode is not particularly limited as long as it uses a gallium oxide-based semiconductor, as long as it does not impair the object of the present invention.
  • the gallium oxide-based semiconductor include a gallium oxide or a semiconductor containing a mixed crystal of gallium oxide.
  • the gallium oxide-based Schottky barrier diode is a junction barrier Schottky diode (JBS).
  • JBS junction barrier Schottky diode
  • the crystal structure of the gallium oxide-based semiconductor is also not particularly limited as long as the object of the present invention is not impaired.
  • the crystal structure of the gallium oxide-based semiconductor includes, for example, a corundum structure, a ⁇ -galia structure, a hexagonal structure (for example, ⁇ -type structure, etc.), a rectangular structure (for example, a ⁇ -type structure, etc.), a cubic structure, or a square structure.
  • a crystal structure and the like can be mentioned.
  • the crystal structure of the gallium oxide semiconductor has a corundum structure because a power conversion circuit having more excellent switching characteristics can be obtained.
  • the gallium oxide-based Schottky barrier diode contains at least an n-type semiconductor layer, and the carrier concentration of the n-type semiconductor layer is 2.0 ⁇ 10 17 / cm 3 or less. This is preferable because the effect of reducing radiation noise can be more satisfactorily exhibited and the heat generation of the entire circuit can be further reduced.
  • the carrier concentration of the n-type semiconductor layer is preferably in the range of 1.0 ⁇ 10 16 / cm 3 to 5.0 ⁇ 10 16 / cm 3 .
  • the thickness of the n-type semiconductor layer is not particularly limited, but is preferably 1 ⁇ m to 30 ⁇ m, more preferably 1 ⁇ m to 10 ⁇ m, and most preferably 2 ⁇ m to 5 ⁇ m.
  • the gallium oxide-based Schottky barrier diode further includes an n + type semiconductor layer.
  • the carrier concentration of the n + type semiconductor layer is not particularly limited, but is usually in the range of 1 ⁇ 10 18 / cm 3 to 1 ⁇ 10 21 / cm 3 .
  • the thickness of the n + type semiconductor layer is also not particularly limited, but in the embodiment of the present invention, it is preferably 0.1 ⁇ m to 30 ⁇ m, more preferably 0.1 ⁇ m to 10 ⁇ m, and 0.1 ⁇ m to 0.1 ⁇ m. Most preferably, it is 4 ⁇ m.
  • the thermal resistance can be further reduced while maintaining the switching characteristics.
  • the switching element and the commutation diode use different semiconductors, and the band gap of the semiconductor used in the gallium oxide-based Schottky barrier diode is set. It is more preferable that the band gap is larger than the band gap of the semiconductor used in the switching element. With such a preferable configuration, even when a semiconductor having a bandgap smaller than that of the gallium oxide-based Schottky barrier diode is used for the switching element, the performance of the switching element can be exhibited better. Can be done.
  • the switching frequency of the power conversion circuit is not particularly limited, but in the embodiment of the present invention, it is preferably 100 kHz or more, more preferably 300 kHz or more, and even more preferably 500 kHz or more.
  • the gallium oxide-based Schottky barrier diode as a commutation diode, it is possible to realize a power conversion circuit in which radiation noise is reduced even if the switching frequency is such a high frequency.
  • FIG. 1 schematically shows a power conversion system including a power conversion circuit according to the first embodiment of the present invention.
  • the power conversion system of FIG. 1 is a power factor improving system, which is an AC power supply 1, a diode bridge 2, an input capacitor 3, a reactor 4, a switching element 5, a freewheel diode 6, a commutation diode 7, an output capacitor 8, and a load 9. It has.
  • the reactor 4, the switching element, the freewheel diode 6, the commutation diode 7, and the output capacitor 8 constitute a power conversion circuit 10 as a power factor improving circuit.
  • the diode bridge 2 and the input capacitor 3 form a full-wave rectifier circuit to rectify the voltage input from the AC power supply 1.
  • the reactor 4 is urged during the on period of the switching element 5, the current of the reactor 4 is commutated to the commutation diode 7 during the off period of the switching element 5, and the voltage is output by the sum of the generated voltage and the input voltage of the reactor 4.
  • the operation of charging the capacitor 8 is periodically repeated to generate a voltage higher than the input voltage.
  • the power supply 1 is not particularly limited as long as it can supply an AC voltage.
  • Examples of the power source 1 include a commercial power source and the like. Further, the power supply 1 may be input by converting a DC voltage or an AC voltage into an AC voltage by using a desired conversion circuit, for example.
  • the power conversion circuit 10 in FIG. 1 may further include a filter and a transformer.
  • the commutation diode 7 conducts a current flowing in the direction of the electromotive force by a voltage including at least an electromotive force generated from the reactor 4 when the switching element 5 is turned off due to the urging of the switching element 5 during the on period. It prevents the charged charge from flowing back to the output capacitor 8.
  • a gallium oxide-based Schottky barrier diode for the commutation diode 7 the radiation noise of the entire power conversion circuit can be reduced. Further, by reducing the noise, it is possible to reduce the heat generation of the entire power conversion circuit. Further, by reducing the radiation noise of the entire power conversion circuit, it is possible to reduce the size of noise suppression components such as filters and capacitors (not shown), for example.
  • FIG. 2 schematically shows a power conversion system including a power conversion circuit according to a second embodiment of the present invention.
  • the power conversion system of FIG. 2 includes a power supply (DC power supply) 1, a reactor 4, a switching element 5, a freewheel diode 6, a commutation diode 7, and an output capacitor 8.
  • the reactor 4, the switching element 5, the freewheel diode 6, the commutation diode 7, and the output capacitor 8 constitute the power conversion circuit 10.
  • the reactor 4 is urged during the on period of the switching element 5, the current of the reactor 4 is commutated to the commutation diode 7 during the off period of the switching element 5, and the voltage is output by the sum of the generated voltage and the input voltage of the reactor 4.
  • the operation of charging the capacitor 8 is periodically repeated to generate a voltage higher than the input voltage and supply it to the load 9. Further, it is also preferable to input the measured value measured by using various sensors (not shown) into the control circuit and perform switching control based on the input signal.
  • the power supply 1 is not particularly limited as long as it can supply a DC voltage. Examples of the power source 1 include a distributed power source, a storage battery, a generator, and the like. The power supply 1 may be input by converting a DC voltage or an AC voltage into a DC voltage using a desired conversion circuit, for example.
  • the power conversion circuit 10 in FIG. 2 may further include a transformer.
  • FIG. 3 schematically shows a power conversion system including a power conversion circuit according to a third embodiment of the present invention.
  • the power conversion system of FIG. 3 includes a power supply (DC power supply) 1, a reactor 4, a switching element 5, a freewheel diode 6, a commutation diode 7, and an output capacitor 8.
  • the reactor 4, the switching element 5, the freewheel diode 6, the commutation diode 7, and the output capacitor 8 constitute the power conversion circuit 10.
  • a voltage lower than the input voltage is generated by repeating it periodically and supplied to the load 9. Further, it is also preferable to input the measured value measured by using various sensors (not shown) into the control circuit and perform switching control based on the input signal.
  • the power supply 1 is not particularly limited as long as it can supply a DC voltage. Examples of the power source 1 include a distributed power source, a storage battery, a generator, and the like. The power supply 1 may be input by converting a DC voltage or an AC voltage into a DC voltage using a desired conversion circuit, for example.
  • the power conversion circuit 10 in FIG. 3 may further include a transformer.
  • FIG. 4 shows an example of a gallium oxide-based Schottky barrier diode (SBD) according to an embodiment of the present invention.
  • the SBD of FIG. 4 includes an n-type semiconductor layer 101a, an n + type semiconductor layer 101b, a Schottky electrode 105a, and an ohmic electrode 105b.
  • the carrier concentration of the n-type semiconductor layer 101a is 2.0 ⁇ 10 17 / cm 3 or less, the effect of reducing radiation noise can be more satisfactorily exhibited. It is preferable because the heat generation of the entire circuit can be further reduced.
  • the carrier concentration of the n + type semiconductor layer is not particularly limited, but is usually in the range of 1 ⁇ 10 18 / cm 3 to 1 ⁇ 10 21 / cm 3 .
  • the thickness of the n + type semiconductor layer is also not particularly limited, but in the embodiment of the present invention, it is preferably 0.1 ⁇ m to 50 ⁇ m, more preferably 0.1 ⁇ m to 10 ⁇ m, and 0.1 ⁇ m to 0.1 ⁇ m. Most preferably, it is 4 ⁇ m.
  • FIG. 13 shows a main part of a Schottky barrier diode (SBD), which is one of the preferred embodiments of the present invention.
  • the SBD of FIG. 13 includes an ohmic electrode 202, an n-type semiconductor layer 201a, an n + type semiconductor layer 201b, Schottky electrodes 203a and 203b, and an insulator film (field insulating film) 204.
  • the insulator film 204 has a taper angle of 10 ° in which the film thickness decreases toward the inside of the semiconductor device.
  • FIG. 13 shows a case where the taper angle of the insulator film 204 is 10 °, but the taper angle is not limited to 10 ° and may be larger than 10 ° or more than 10 °.
  • the taper angle of the insulator film 204 is preferably 20 ° or less.
  • the insulator film 204 is formed on the n-type semiconductor layer 101a and has an opening.
  • the insulator film 204 improves the crystal defects at the ends, forms the depletion layer better, the electric field relaxation is further improved, and the leakage current is suppressed better. Can be done.
  • the outer end portion of the metal layer 203b and / or the metal layer 203c as the first electrode layer is located outside the outer end portion of the metal layer 203a as the second electrode layer. Therefore, the leakage current can be suppressed more satisfactorily.
  • the portion of the metal layer 203a protruding outward from the outer end portion of the metal layer 203a has a tapered region in which the film thickness decreases toward the outside of the semiconductor device. Therefore, it has a structure with better pressure resistance.
  • the n-type semiconductor layer has a guard ring (not shown).
  • the guard ring can be provided, for example, by ion-implanting a p-type dopant (for example, Mg or the like) into the n-type semiconductor layer.
  • the means for forming each layer in FIG. 13 is not particularly limited and may be a known means as long as the object of the present invention is not impaired.
  • a means for forming a film by a vacuum vapor deposition method, a CVD method, a sputtering method, various coating techniques, and then patterning by a photolithography method, or a means for directly patterning using a printing technique or the like can be mentioned.
  • a power factor improvement circuit (PFC circuit) equivalent to the power conversion circuit shown in FIG. 1 was manufactured and evaluated.
  • a SiC MOFET was used as the switching element.
  • Example 1 to produce a power factor correction circuit using ⁇ -Ga 2 O 3 based Schottky barrier diode commutation diode.
  • SBD As the ⁇ -Ga 2 O 3 based Schottky barrier diode was used SBD having the configuration shown in FIG. 13.
  • Comparative Example 1 a Si-based diode was used for the commutation diode, and as Comparative Example 2, a SiC-based diode was used for the commutation diode to fabricate a power factor improvement circuit.
  • Example 1 and Comparative Example 1 The PFC operation waveforms in Example 1 and Comparative Example 1 are shown in FIG. As is clear from FIG. 5, in the power conversion circuit of Comparative Example 1, the recovery current waveform is observed in the PFC operation waveform, but in the power conversion circuit of Example 1, the recovery current waveform is observed in the PFC operation waveform. However, it can be seen that the noise as a PFC circuit is reduced and the controllability is superior. Further, the diode turn-off waveforms of Example 1, Comparative Example 1 and Comparative Example 2 are shown in FIGS. 6, 7 and 8, respectively. As is clear from FIGS. 6, 7 and 8, the power conversion circuit of Example 1 has a significantly reduced total energy of radiation noise as compared with the power conversion circuits of Comparative Example 1 and Comparative Example 2. You can see that.
  • the power change circuit using the gallium oxide-based Schottky barrier diode as the commutation diode is superior in noise characteristics to the power conversion circuit using the Si-based diode or the SiC-based diode as the commutation diode. It turns out that.
  • the switching frequency of Example 1 was about 120 kHz, and it was confirmed that noise was reduced even in such high frequency operation. Further, since the power conversion circuit of the first embodiment also suppresses heat generation by reducing the total energy of radiation noise, the power factor improving circuit is used even when a gallium oxide semiconductor having a low thermal conductivity is used. Can operate well in. Further, as is clear from FIGS.
  • the switching loss of the SiC MOSFET as the switching element can also be reduced.
  • the concentration of the n-type semiconductor layer is 2.0 ⁇ 10 17 / cm 3 or less and the thickness of the n-type semiconductor layer is within the range of 1 ⁇ m to 10 ⁇ m. It was confirmed that particularly good switching characteristics can be obtained.
  • the electrode area at the shotkey interface is in the range of 0.8 mm 2 to 1.0 mm 2
  • the concentration of the n-type semiconductor layer is 1.0 ⁇ 10 16 / cm 3 to 5.0 ⁇ 10 16 / cm 3 . It was confirmed that even better switching characteristics can be obtained when the thickness of the n-type semiconductor layer is within the range of 2 ⁇ m to 5 ⁇ m.
  • FIG. 9 is a block configuration diagram showing an example of a control system to which the power conversion device circuit according to the embodiment of the present invention can be applied
  • FIG. 10 is a circuit diagram of the control system, particularly for an electric vehicle. It is a control system suitable for mounting.
  • the control system 500 includes a battery (power supply) 501, a boost converter 502, a step-down converter 503, an inverter 504, a motor (drive target) 505, and a drive control unit 506, which are mounted on an electric vehicle. It becomes.
  • the battery 501 is composed of a storage battery such as a nickel hydrogen battery or a lithium ion battery, and stores electric power by charging at a power supply station or regenerating energy during deceleration, and is required for the operation of the traveling system and the electrical system of an electric vehicle. It can output a DC voltage.
  • the boost converter 502 is a voltage converter equipped with, for example, a chopper circuit, and boosts a DC voltage of, for example, 200 V supplied from the battery 501 to, for example, 650 V by the switching operation of the chopper circuit, and outputs the DC voltage to a traveling system such as a motor. be able to.
  • the step-down converter 503 is also a voltage converter equipped with a chopper circuit, but by stepping down the DC voltage of, for example, 200 V supplied from the battery 501 to, for example, about 12 V, a power window, power steering, or an in-vehicle electric device can be used. It can be output to the electrical system including.
  • the inverter 504 converts the DC voltage supplied from the boost converter 502 into a three-phase AC voltage by a switching operation and outputs it to the motor 505.
  • the motor 505 is a three-phase AC motor constituting the traveling system of the electric vehicle, and is rotationally driven by the three-phase AC voltage output from the inverter 504. Communicate to.
  • the drive control unit 506 has the function of a controller equipped with a calculation unit such as a CPU (Central Processing Unit) and a data storage unit such as a memory, and generates a control signal using the input measurement signal to the inverter 504. By outputting as a feedback signal, the switching operation by the switching element is controlled.
  • a calculation unit such as a CPU (Central Processing Unit)
  • a data storage unit such as a memory
  • the AC voltage applied to the motor 505 by the inverter 504 is instantaneously corrected, so that the operation control of the electric vehicle can be accurately executed, and the safe and comfortable operation of the electric vehicle is realized. It is also possible to control the output voltage to the inverter 504 by giving the feedback signal from the drive control unit 506 to the boost converter 502.
  • FIG. 10 is a circuit configuration excluding the step-down converter 503 in FIG. 9, that is, a circuit configuration showing only a configuration for driving the motor 505.
  • the semiconductor device of the present invention is used for switching control by being adopted in a boost converter 502 and an inverter 504, for example, as a Schottky barrier diode.
  • the boost converter 502 is incorporated in a chopper circuit to perform chopper control
  • the inverter 504 is incorporated in a switching circuit including an IGBT to perform switching control.
  • An inductor (coil, etc.) is interposed in the output of the battery 501 to stabilize the current, and a capacitor (electrolytic capacitor, etc.) is interposed between the battery 501, the boost converter 502, and the inverter 504. We are trying to stabilize the voltage.
  • a calculation unit 507 composed of a CPU (Central Processing Unit) and a storage unit 508 composed of a non-volatile memory are provided in the drive control unit 506.
  • the signal input to the drive control unit 506 is given to the calculation unit 507, and a feedback signal for each semiconductor element is generated by performing necessary calculations.
  • the storage unit 508 temporarily holds the calculation result by the calculation unit 507, stores physical constants and functions required for drive control in the form of a table, and appropriately outputs them to the calculation unit 507.
  • a known configuration can be adopted for the calculation unit 507 and the storage unit 508, and the processing capacity thereof and the like can be arbitrarily selected.
  • a diode, a switching element such as a thyristor, a power transistor, an IGBT, a MOSFET, or the like is used for the switching operation of the boost converter 502, the step-down converter 503, and the inverter 504. .
  • gallium oxide (Ga 2 O 3 ), particularly corundum type gallium oxide ( ⁇ -Ga 2 O 3 ), as the material for these semiconductor devices the switching characteristics are significantly improved. Further, by applying the power conversion circuit or the like according to the present invention, extremely good switching characteristics can be expected, and further miniaturization and cost reduction of the control system 500 can be realized.
  • each of the boost converter 502, the step-down converter 503, and the inverter 504 can be expected to have the effect of the present invention, and any one of them, any combination of two or more, or a drive control unit 506 is also included.
  • the effect of the present invention can be expected in any of the above.
  • the control system 500 described above can be applied not only to the control system of an electric vehicle by applying the semiconductor device of the present invention, but also to a control system for all purposes such as stepping up / down the power from a DC power source and converting power from DC to AC. It is possible to apply to. It is also possible to use a power source such as a solar cell as the battery.
  • FIG. 11 is a block configuration diagram showing another example of a control system to which the power conversion circuit according to the embodiment of the present invention can be applied
  • FIG. 12 is a circuit diagram of the control system, which operates with electric power from an AC power source. It is a control system suitable for installation in infrastructure equipment and home appliances.
  • the control system 600 inputs electric power supplied from an external, for example, a three-phase AC power supply (power supply) 601 and includes an AC / DC converter 602, an inverter 604, and a motor (drive target) 605. It has a drive control unit 606, which can be mounted on various devices (described later).
  • the three-phase AC power supply 601 is, for example, a power generation facility of an electric power company (thermal power plant, hydropower plant, geothermal power plant, nuclear power plant, etc.), and its output is supplied as an AC voltage while being stepped down via a substation. To. Further, it is installed in a building or a nearby facility in the form of a private power generator or the like and is supplied by a power cable.
  • the AC / DC converter 602 is a voltage conversion device that converts an AC voltage into a DC voltage, and converts an AC voltage of 100V or 200V supplied from the three-phase AC power supply 601 into a predetermined DC voltage. Specifically, it is converted into a commonly used desired DC voltage such as 3.3V, 5V, or 12V by voltage conversion. When the drive target is a motor, conversion to 12V is performed. It is also possible to adopt a single-phase AC power supply instead of the three-phase AC power supply, and in that case, if the AC / DC converter has a single-phase input, the same system configuration can be obtained.
  • the inverter 604 converts the DC voltage supplied from the AC / DC converter 602 into a three-phase AC voltage by a switching operation and outputs it to the motor 605.
  • the form of the motor 604 differs depending on the control target, but when the control target is a train, it drives a wheel, when it is a factory facility, it drives a pump or various power sources, and when it is a home appliance, it drives a compressor or the like. It is a three-phase AC motor, which is rotationally driven by a three-phase AC voltage output from the inverter 604, and transmits the rotational driving force to a drive target (not shown).
  • the inverter 604 is no longer required for the control system 600, and as shown in FIG. 11, a DC voltage is supplied from the AC / DC converter 602 to the drive target.
  • a DC voltage of 3.3 V is supplied to a personal computer or the like, and a DC voltage of 5 V is supplied to an LED lighting device or the like.
  • the drive control unit 606 uses various sensors (not shown), measured values such as the rotation speed and torque of the drive target, the temperature and flow rate of the surrounding environment of the drive target, etc. to measure these measurement signals, and these measurement signals are input to the drive control unit 606. At the same time, the output voltage value of the inverter 604 is also input to the drive control unit 606. Based on these measurement signals, the drive control unit 606 gives a feedback signal to the inverter 604 and controls the switching operation by the switching element. As a result, the AC voltage applied to the motor 605 by the inverter 604 is instantaneously corrected, so that the operation control of the drive target can be accurately executed, and the stable operation of the drive target is realized. Further, as described above, when the drive target can be driven by a DC voltage, it is also possible to perform feedback control of the AC / DC converter 602 instead of the feedback to the inverter.
  • FIG. 12 shows the circuit configuration of FIG.
  • the semiconductor device of the present invention is used for switching control by being adopted in an AC / DC converter 602 and an inverter 604, for example, as a Schottky barrier diode.
  • an AC / DC converter 602 for example, a Schottky barrier diode having a circuit configuration in a bridge shape is used, and DC conversion is performed by converting and rectifying the negative voltage component of the input voltage to a positive voltage.
  • the inverter 604 is incorporated in the switching circuit of the IGBT to perform switching control.
  • An inductor (coil, etc.) is interposed between the three-phase AC power supply 601 and the AC / DC converter 602 to stabilize the current, and a capacitor (electrolytic capacitor) is placed between the AC / DC converter 602 and the inverter 604. Etc.) are intervened to stabilize the voltage.
  • a calculation unit 607 composed of a CPU and a storage unit 608 composed of a non-volatile memory are provided in the drive control unit 606.
  • the signal input to the drive control unit 606 is given to the calculation unit 607, and a feedback signal for each semiconductor element is generated by performing necessary calculations.
  • the storage unit 608 temporarily holds the calculation result by the calculation unit 607, stores physical constants and functions required for drive control in the form of a table, and appropriately outputs them to the calculation unit 607.
  • a known configuration can be adopted for the calculation unit 607 and the storage unit 608, and the processing capacity thereof and the like can be arbitrarily selected.
  • the rectifying operation and switching operation of the AC / DC converter 602 and the inverter 604 are performed by a diode, a thyristor which is a switching element, and a power transistor.
  • a diode a thyristor which is a switching element
  • a power transistor a power transistor.
  • IGBT, MOSFET and the like are used.
  • gallium oxide (Ga 2 O 3 ), particularly corundum type gallium oxide ( ⁇ -Ga 2 O 3 ) as the material for these semiconductor devices, the switching characteristics are improved. Further, by applying the power conversion circuit according to the present invention, extremely good switching characteristics can be expected, and further miniaturization and cost reduction of the control system 600 can be realized.
  • each of the AC / DC converter 602 and the inverter 604 can be expected to have the effect of the present invention, and the effect of the present invention can be expected in any one or combination of these, or in any form including the drive control unit 606. Can be expected.
  • the motor 605 is illustrated as a drive target in FIGS. 11 and 12, the drive target is not necessarily limited to those that operate mechanically, and many devices that require an AC voltage can be targeted.
  • the control system 600 it can be applied as long as the drive target is driven by inputting power from an AC power source, and it can be applied to infrastructure equipment (for example, power equipment such as buildings and factories, communication equipment, traffic control equipment, water and sewage treatment). It can be installed for drive control of equipment such as equipment, system equipment, labor-saving equipment, trains, and home appliances (for example, refrigerators, washing machines, personal computers, LED lighting equipment, video equipment, audio equipment, etc.). can.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Dc-Dc Converters (AREA)
  • Inverter Devices (AREA)
PCT/JP2021/025889 2020-07-10 2021-07-09 電力変換回路および電力変換システム Ceased WO2022009970A1 (ja)

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EP21838874.2A EP4181207A4 (en) 2020-07-10 2021-07-09 Power conversion circuit and power conversion system
CN202180048967.5A CN115836468A (zh) 2020-07-10 2021-07-09 功率转换电路以及功率转换系统
JP2022535397A JPWO2022009970A1 (https=) 2020-07-10 2021-07-09
US18/094,540 US20230179095A1 (en) 2020-07-10 2023-01-09 Power conversion circuit and power conversion system

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CN115836468A (zh) 2023-03-21
EP4181207A1 (en) 2023-05-17

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