WO2022007183A1 - 显示面板、显示面板制作方法和显示装置 - Google Patents

显示面板、显示面板制作方法和显示装置 Download PDF

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Publication number
WO2022007183A1
WO2022007183A1 PCT/CN2020/114680 CN2020114680W WO2022007183A1 WO 2022007183 A1 WO2022007183 A1 WO 2022007183A1 CN 2020114680 W CN2020114680 W CN 2020114680W WO 2022007183 A1 WO2022007183 A1 WO 2022007183A1
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Prior art keywords
layer
deformation
display panel
deformed
hole transport
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French (fr)
Inventor
潘杰
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present application relates to the field of display technology, and in particular, to a display panel, a method for manufacturing a display panel, and a display device.
  • OLED Organic Light-Emitting Diode, Organic Light Emitting Diode
  • OLED panels have many advantages such as thinness and low power consumption, and have gradually become the current mainstream display technology.
  • OLED panels include an anode layer, a hole injection layer, a hole transport layer, and a light-emitting layer. , electron transport layer, electron injection layer, cathode layer.
  • the working principle of the OLED panel is that the anode layer emits holes under the action of an electric field, the holes pass through the hole injection layer, the hole transport layer is transported to the light-emitting layer, the cathode layer emits electrons under the action of the electric field, and the electrons pass through the electron injection layer and The electron transport layer is transported to the light-emitting layer, and the holes and electrons recombine in the light-emitting layer to emit light. Formed by evaporation, covering the entire pixel area.
  • the hole injection layer and the hole transport layer have good conductivity, when controlling the light emission of a certain pixel, the holes flow from the anode layer to the cathode layer, and also reach the phase through the hole transport layer and the hole injection layer. Therefore, during the implementation process, the inventor found at least the following problems in the traditional technology: the traditional OLED panel has impure light emission due to lateral leakage of holes and poor display effect.
  • an embodiment of the present application provides a display panel, including a deformation layer;
  • the deformation layer is a material layer formed of a material that can be expanded and deformed and can be restored to its original shape;
  • the deformation layer is sandwiched between the pixel definition layer and the hole injection layer of the display panel; the deformation layer is used to disconnect the hole injection layer and the hole transport layer of the display panel during the manufacturing process of the display panel.
  • an embodiment of the present application also provides a method for manufacturing a display panel, including the following steps:
  • a substrate is provided; an anode layer and a pixel definition layer are sequentially formed on the substrate;
  • the deformation layer is a material layer formed of a material that can be expanded and deformed and can be restored to its original shape;
  • Expansion deformation treatment is performed on the deformation layer
  • the hole injection layer and the hole transport layer cover the anode layer and the deformed layer after expansion deformation;
  • the deformed layer after expansion and deformation is restored to its original state.
  • an embodiment of the present application also provides a display device, including a display panel; the display panel includes a deformation layer; the deformation layer is a material layer formed of a material that can be expanded and deformed and can be restored to its original shape;
  • the deformation layer is sandwiched between the pixel definition layer and the hole injection layer of the display panel; the deformation layer is used to disconnect the hole injection layer and the hole transport layer of the display panel during the manufacturing process of the display panel.
  • the display panel provided by each embodiment of the present application includes a deformation layer; the deformation layer is a material layer formed of a material that can be expanded and deformed and can be restored to its original shape; the deformation layer is sandwiched between the pixel definition layer and the hole injection layer of the display panel The deformation layer is used to disconnect the hole injection layer and the hole transport layer of the display panel during the production process of the display panel. Disconnection is performed, thereby preventing the lateral flow of holes to form lateral leakage current, improving the purity of pixel light emission and improving the display effect.
  • FIG. 1 is a schematic structural diagram of a display panel in one embodiment
  • FIG. 2 is a schematic flowchart of a method for fabricating a display panel in one embodiment
  • FIG. 3 is a schematic diagram of a process for forming a deformable layer in one embodiment
  • Fig. 4 is a process schematic diagram of the expansion deformation of the deformation layer in one embodiment
  • FIG. 5 is a schematic diagram of a process for restoring the deformed layer to its original state in one embodiment.
  • a display panel which includes a deformation layer 11;
  • the deformation layer 11 is A material layer formed from a material that can be expanded and deformed and can be restored to its original shape;
  • the deformation layer 11 is sandwiched between the pixel definition layer 13 and the hole injection layer 15 of the display panel; the deformation layer 11 is used to disconnect the hole injection layer 15 and the hole transport layer of the display panel during the production process of the display panel. 17.
  • the hole injection layer 15 and the hole transport layer 17 in the traditional OLED panel are formed by evaporation of the entire mask plate, which continuously covers the entire pixel area, and holes are easily transported laterally to generate lateral leakage current.
  • a deformation layer 11 is added between the pixel definition layer 13 and the hole injection layer 15 of the display panel.
  • the deformation layer 11 is formed on the pixel definition layer 13, the deformation layer 11 is subjected to expansion deformation treatment, and then the hole injection layer 15 and holes are formed in sequence
  • the transport layer 17 due to the expansion of the deformation layer 11, its volume and thickness become larger, and the distance between the top of the formed layer after expansion and deformation and the anode layer 21 becomes larger, and the hole injection layer 15 covering the anode and covering the
  • the hole injection layer 15 on the formation layer after the expansion deformation is broken, the hole transport layer 17 covering the anode and the hole transport layer 17 covering the formation layer after the expansion deformation are broken, and the hole injection layer is broken.
  • the layer 15 and the hole transport layer 17 no longer continuously cover the entire pixel area, thereby blocking the lateral transport of holes to generate lateral leakage current, and avoiding the impurity of the luminescence caused by the holes of a pixel flowing into other pixels and causing other pixels to emit light.
  • the problem is that
  • the deformation layer 11 is a material layer formed of a material that can be expanded and deformed and can be restored to its original shape. Under certain conditions, the deformation layer 11 can be expanded and deformed, and under another certain condition, the deformation layer 11 can be restored from the state of expansion and deformation.
  • the deformation layer 11 is a material layer formed of an azophenyl polymer. Azophenyl polymers can change from trans to cis under ultraviolet light irradiation, and undergo swelling deformation, and under green light irradiation, they can change from cis to trans and return to their original state.
  • the display panel further includes a substrate 19, a light-emitting layer 29, an electron transport layer 23, an electron injection layer 25, a cathode layer 27, an anode layer 21, a pixel definition layer 13, a deformation layer 11, and a hole injection layer.
  • the layer 15 , the hole transport layer 17 , the light emitting layer 29 , the electron transport layer 23 , the electron injection layer 25 and the cathode layer 27 are disposed on the substrate 19 in this order.
  • a deformation layer 11 is included; the deformation layer 11 is a material layer formed of a material that can be expanded and deformed and can be restored to its original shape; the deformation layer 11 is sandwiched between the pixel definition layer 13 and the holes of the display panel. Between the injection layers 15; the deformation layer 11 is used to disconnect the hole injection layer 15 and the hole transport layer 17 of the display panel during the production process of the display panel. The hole injection layer 15 and the hole transport layer 17 are disconnected, thereby preventing the lateral flow of holes to form lateral leakage current, improving the purity of pixel light emission and improving the display effect.
  • a method for fabricating a display panel comprising the following steps:
  • Step S21 providing a substrate 19; an anode layer 21 and a pixel definition layer 13 are sequentially formed on the substrate 19;
  • Step S23 forming a deformation layer 11 on the pixel definition layer 13;
  • the deformation layer 11 is a material layer formed of a material that can be expanded and deformed and can be restored to its original shape;
  • Step S25 performing expansion deformation processing on the deformation layer 11;
  • Step S27 forming the hole injection layer 15 and the hole transport layer 17 in sequence; the hole injection layer 15 and the hole transport layer 17 cover the anode layer 21 and the deformed layer 11 after expansion deformation;
  • step S29 the deformed layer 11 after the expansion and deformation is restored to its original state.
  • the substrate 19 can be made of but not limited to the following materials: polyimide, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyethersulfone, glass and quartz .
  • An anode layer 21 is formed on the substrate 19, and the anode layer 21 can be made of but not limited to the following materials: ITO (Indium Tin Oxides, indium tin oxide), IZO, Au, Pt and Si, for example, the material of the anode layer 21 is TIO /Ag/TIO. Specifically, a deposition process may be used to form the anode layer 21 on the substrate 19.
  • the deposition process described in this application may be any one of the following processes: chemical vapor deposition (Chemical Vapor Deposition) Vapor Deposition, CVD), Physical Vapor Deposition (Physical Vapor Deposition, PVD), Atomic Layer Deposition (atomic layer deposition) deposition, ALD), low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD), Laser ablation deposition (Laser ablation deposition, LAD) and Selective Epitaxy (Selective) epitaxial growth, SEG).
  • chemical vapor deposition Chemical Vapor Deposition
  • PVD Physical Vapor Deposition
  • Atomic Layer Deposition atomic layer deposition
  • ALD Atomic Layer Deposition
  • low pressure chemical vapor deposition Low Pressure Chemical Vapor Deposition
  • Laser ablation deposition Laser ablation deposition
  • LAD Laser ablation deposition
  • SEG Selective Epitaxy
  • a pixel definition layer 13 is formed on the anode layer 21, and the pixel definition layer 13 may be made of, but not limited to, the following materials: organic insulating materials containing fluorine and/or the like. Specifically, the pixel definition layer 13 may be formed on the substrate 19 by a deposition process.
  • a deformation layer 11 is formed on the pixel definition layer 13 , and the deformation layer 11 is formed of a material that can be expanded and deformed and can be restored to its original shape.
  • the deformation layer 11 is formed of an azophenyl polymer. .
  • the deformation layer 11 can be formed by chemical vapor deposition, followed by etching, vapor deposition, or transfer printing.
  • the deformation layer 11 is expanded and deformed.
  • the deformation layer 11 is irradiated with ultraviolet light, and the deformation layer 11 is expanded and deformed (as shown in FIG. 4 ). (shown), the volume becomes too high to increase the distance between its top and the anode, which facilitates the breakage of the hole injection layer 15 and the hole transport layer 17.
  • a hole injection layer 15 and a hole transport layer 17 are formed in sequence, wherein the hole injection layer 15 can be made of but not limited to the following materials: polyester carbonate, titanium phthalocyanine, m-MTDATA And 2-TNATA, the hole transport layer 17 can be made of, but not limited to, the following materials: TPD, NPB, PVK, Spiro-TPD and Spiro-NPB. Specifically, a deposition process may be used to form the hole injection layer 15 and the hole transport layer 17 .
  • the deformed layer 11 after expansion and deformation is subjected to a restoration process.
  • the deformation after expansion and deformation is analyzed.
  • the layer 11 is irradiated with green light, the volume of the deformation layer 11 becomes small (as shown in FIG. 5 ), the distance between the top of the deformation layer 11 and the anode layer 21 is reduced, and the hole injection layer 15 and the hole transport layer 17 are finally formed. It is broken and discontinuous (as shown in FIG. 5 ), which can block the lateral flow of holes in the hole injection layer 15 and the hole transport layer 17 .
  • the step of restoring the original shape of the deformed layer 11 after the expansion and deformation further includes:
  • a light-emitting layer 29 is formed on the hole transport layer 17 overlying the anode layer 21 .
  • the light-emitting layer 29 is formed on the hole transport layer 17 covering the anode layer 21, and the light-emitting layer 29 can be made of but not limited to the following materials: Alq3, Almq3, Blue and TBADN. Specifically, the light emitting layer 29 may be formed by a deposition process.
  • the step further includes:
  • the electron transport layer 23 is formed on the light emitting layer 29 and the hole transport layer 17 .
  • the electron transport layer 23 is formed on the light-emitting layer 29 and the hole transport layer 17, and the electron transport layer 23 can be made of but not limited to the following materials: Alq3, Almq3, DVPBi, TAZ, OXD, PBD, BND and pv. Specifically, the electron transport layer 23 may be formed by a deposition process.
  • the step of forming the electron transport layer 23 on the light emitting layer 29 and the hole transport layer 17 further includes:
  • the electron injection layer 25 is formed on the electron transport layer 23 .
  • the electron injection layer 25 is formed on the electron transport layer 23, and the electron injection layer 25 can be made of, but not limited to, the following materials: LiF, MgP, MgF2 and Al2O3. Specifically, the electron injection layer 25 may be formed by a deposition process.
  • the step of forming the electron injection layer 25 on the electron transport layer 23 further includes:
  • the cathode layer 27 is formed on the electron injection layer 25 .
  • the cathode layer 27 is formed on the electron injection layer 25, and the cathode layer 27 is made of but not limited to the following materials: Ag, Al, Li, Mg, Ca and In. Specifically, the electron cathode layer 27 may be formed by a deposition process.
  • the steps are as follows: a substrate 19 is provided; an anode layer 21 and a pixel definition layer 13 are sequentially formed on the substrate 19; a deformation layer 11 is formed on the pixel definition layer 13; A material layer formed of a material that can be expanded and deformed and can be restored to its original state; the deformation layer 11 is subjected to expansion deformation treatment; the hole injection layer 15 and the hole transport layer 17 are formed in sequence; the hole injection layer 15 and the hole transport layer 17 are covered on the On the anode layer 21 and the deformed layer 11 after the expansion and deformation; the deformed layer 11 after the expansion and deformation is subjected to a restoration process, so that before the hole injection layer 15 and the hole transport layer 17 are formed, the deformation layer 11 is subjected to expansion deformation treatment , raise the distance between the top of the deformation layer 11 and the anode layer 21, so as to cut off the hole injection layer 15 and the hole transport layer 17, and after the hole injection layer 15 and the hole
  • an embodiment of the present application further provides a display device, including the display panel described in each embodiment of the display panel of the present application.
  • the display panel described in this embodiment is the same as the display panel described in each embodiment of the display panel of this application.
  • the display panel of the present application has high luminous purity and good display effect.
  • a display device including a display panel manufactured by using the display panel manufacturing method described in each embodiment of the display panel manufacturing method of the present application.
  • the display panel manufacturing method described in this embodiment is the same as the display panel manufacturing method described in each embodiment of the display panel manufacturing method of the present application.
  • the display device of the present application has high luminous purity and good display effect.

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Abstract

本申请涉及一种显示面板、显示面板制作方法和显示装置，所述显示面板，包括夹设在显示面板的像素定义层和空穴注入层之间的形变层；形变层用于在显示面板的制作过程中，断开显示面板的空穴注入层和空穴传输层，从而阻止空穴横向流动形成横向的泄漏电流，提高了像素发光的纯度，提高了显示效果。

Description

显示面板、显示面板制作方法和显示装置 技术领域
本申请涉及显示技术领域，特别是涉及一种显示面板、显示面板制作方法和显示装置。
 背景技术
OLED（Organic Light-Emitting Diode，有机发光二极管）面板具有轻薄、功耗低等众多优点，逐渐成为目前的主流显示技术，通常OLED面板包括阳极层，空穴注入层，空穴传输层，发光层，电子传输层，电子注入层，阴极层。
OLED面板的工作原理是阳极层在电场的作用下发射空穴，空穴通过空穴注入层，空穴传输层传输到发光层，阴极层在电场的作用下发射电子，电子通过电子注入层和电子传输层传输到发光层，空穴和电子在发光层内复合而发光，其中，空穴注入层、空穴传输层、发光层、电子传输层、电子注入层均由整面的掩膜板蒸镀形成，覆盖整个像素区。
 技术问题
由于空穴注入层和空穴传输层具有良好的导电性，在控制某个像素发光时，空穴由阳极层向阴极层流动的同时，也会经空穴传输层和空穴注入层到达相邻的像素而产生横向的泄漏电流，因此，在实现过程中，发明人发现传统技术中至少存在如下问题：传统OLED面板因空穴横向漏电而导致发光不纯，显示效果差。
 技术解决方案
基于此，有必要针对传统OLED面板因空穴横向漏电而导致发光不纯，显示效果差的问题，提供一种显示面板、显示面板制作方法和显示装置。
为了实现上述目的，一方面，本申请实施例提供了一种显示面板，包括形变层；形变层为由可膨胀变形且可恢复原状的材料形成的材料层；
形变层夹设在显示面板的像素定义层和空穴注入层之间；形变层用于在显示面板的制作过程中，断开显示面板的空穴注入层和空穴传输层。
另一方面，本申请实施例还提供了一种显示面板制作方法，包括以下步骤：
提供基板；基板上依次形成有阳极层和像素定义层；
在像素定义层上，形成形变层；形变层为由可膨胀变形且可恢复原状的材料形成的材料层；
对形变层进行膨胀变形处理；
依次形成空穴注入层和空穴传输层；空穴注入层和空穴传输层覆盖在阳极层和膨胀变形后的形变层上；
对膨胀变形后的形变层进行恢复原状处理。
另一方面，本申请实施例还提供了一种显示装置，包括显示面板；显示面板包括形变层；形变层为由可膨胀变形且可恢复原状的材料形成的材料层；
形变层夹设在显示面板的像素定义层和空穴注入层之间；形变层用于在显示面板的制作过程中，断开显示面板的空穴注入层和空穴传输层。
 有益效果
本申请各实施例提供的显示面板，包括形变层；形变层为由可膨胀变形且可恢复原状的材料形成的材料层；形变层夹设在显示面板的像素定义层和空穴注入层之间；形变层用于在显示面板的制作过程中，断开显示面板的空穴注入层和空穴传输层，通过在显示面板的制作过程中，利用形变层将空穴注入层和空穴传输层进行断开，从而阻止空穴横向流动形成横向的泄漏电流，提高了像素发光的纯度，提高了显示效果。
 附图说明
图1为一个实施例中显示面板的结构示意图；
图2为一个实施例中显示面板制作方法的流程示意图；
图3为一个实施例中形成形变层的工艺示意图；
图4为一个实施例中形变层膨胀变形的工艺示意图；
图5为一个实施例中形变层恢复原状的工艺示意图。
附图标记说明：
11、形变层；13、像素定义层；15、空穴注入层；17、空穴传输层；19、基板；21、阳极层；23、电子传输层；25、电子注入层；27、阴极层；29、发光层。
 本发明的实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。
需要说明的是，当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件并与之结合为一体，或者可能同时存在居中元件。本文所使用的术语“夹设”以及类似的表述只是为了说明的目的。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及／或”包括一个或多个相关的所列项目的任意的和所有的组合。
为了解决传统OLED面板因空穴横向漏电而导致发光不纯，显示效果差的问题，在一个实施例中，如图1所示，提供了一种显示面板，包括形变层11；形变层11为由可膨胀变形且可恢复原状的材料形成的材料层；
形变层11夹设在显示面板的像素定义层13和空穴注入层15之间；形变层11用于在显示面板的制作过程中，断开显示面板的空穴注入层15和空穴传输层17。
需要说明的是，传统OLED面板中的空穴注入层15、空穴传输层17均由整面的掩膜板蒸镀形成，连续的覆盖整个像素区，空穴容易横向传输产生横向的泄漏电流。本申请在显示面板的像素定义层13和空穴注入层15之间增设形变层11。在显示面板的制作过程中，具体的，在形成像素定义层13之后，在像素定义层13上形成形变层11，对形变层11进行膨胀变形处理，再依次形成空穴注入层15和空穴传输层17，由于形变层11膨胀其体积变大、厚度变厚，膨胀变形后的形成层的顶端与阳极层21之间的距离变大，覆盖在阳极上的空穴注入层15与覆盖在膨胀变形后的形成层上的空穴注入层15是断裂的，覆盖在阳极上的空穴传输层17与覆盖在膨胀变形后的形成层上的空穴传输层17是断裂的，空穴注入层15和空穴传输层17不再连续的覆盖整个像素区，从而阻断空穴横向传输产生横向的泄漏电流，避免某个像素的空穴流入其它像素造成其它像素发光而引起的发光不纯的问题。
形变层11为由可膨胀变形且可恢复原状的材料形成的材料层，在一定的条件下，形变层11可膨胀变形，在另一定的条件下，形变层11可从膨胀变形状态恢复原状。在一个示例中，形变层11为由偶氮苯基聚合物形成的材料层。偶氮苯基聚合物在紫外光照射下可以由反式变成顺式、并发生膨胀变形，在绿光照射下会由顺式再变成反式、并恢复原状。
进一步的，如图1所示，显示面板还包括基板19、发光层29、电子传输层23、电子注入层25以及阴极层27，阳极层21、像素定义层13、形变层11、空穴注入层15、空穴传输层17、发光层29、电子传输层23、电子注入层25和阴极层27依次设置在基板19上。
本申请显示面板的各实施例中，包括形变层11；形变层11为由可膨胀变形且可恢复原状的材料形成的材料层；形变层11夹设在显示面板的像素定义层13和空穴注入层15之间；形变层11用于在显示面板的制作过程中，断开显示面板的空穴注入层15和空穴传输层17，通过在显示面板的制作过程中，利用形变层11将空穴注入层15和空穴传输层17进行断开，从而阻止空穴横向流动形成横向的泄漏电流，提高了像素发光的纯度，提高了显示效果。
在一个实施例中，如图2所示，还提供了一种显示面板制作方法，包括以下步骤：
步骤S21，提供基板19；基板19上依次形成有阳极层21和像素定义层13；
步骤S23，在像素定义层13上，形成形变层11；形变层11为由可膨胀变形且可恢复原状的材料形成的材料层；
步骤S25，对形变层11进行膨胀变形处理；
步骤S27，依次形成空穴注入层15和空穴传输层17；空穴注入层15和空穴传输层17覆盖在阳极层21和膨胀变形后的形变层11上；
步骤S29，对膨胀变形后的形变层11进行恢复原状处理。
需要说明的是，基板19可采用但不限于以下材料制成：聚酰亚胺、聚对苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚碳酸酯、聚醚砜、玻璃和石英。
在基板19上形成阳极层21，阳极层21可采用但不限于以下材料制成：ITO（Indium Tin Oxides，氧化铟锡）、IZO、Au、Pt和Si，例如，阳极层21的材料为TIO/Ag/TIO。具体的，可采用沉积工艺在基板19上形成阳极层21，除有特别说明，本申请所述的沉积工艺可为以下工艺的任意一种：化学气相沉积法（Chemical Vapor Deposition，CVD）、物理气相沉积法（Physical Vapor Deposition，PVD）、原子层沉积法（atomic layer deposition，ALD）、低压化学气相沉积法（Low Pressure Chemical Vapor Deposition，LPCVD）、激光烧蚀沉积法（Laser ablation deposition，LAD）和选择外延生长法（Selective epitaxial growth，SEG）。
在阳极层21上形成像素定义层13，像素定义层13可采用但不限于以下材料制成：含氟和/或类似物的有机绝缘材料。具体的，可采用沉积工艺在基板19上形成像素定义层13。
如图3所示，在像素定义层13上形成形变层11，形变层11为由可膨胀变形且可恢复原状的材料形成，在一个示例中，形变层11为由偶氮苯基聚合物形成。具体的，形变层11可采用化学气相沉积成膜后，进行刻蚀、蒸镀或转印等方式制作而成。
制作完形变层11之后，对形变层11膨胀变形处理，以由偶氮苯基聚合物形成的形变层11为例，对形变层11进行紫外光照射，形变层11膨胀变形（如图4所示）后，体积变大太高了其顶端与阳极之间的距离，有利于空穴注入层15和空穴传输层17断裂。
形变层11膨胀变形后，依次形成空穴注入层15和空穴传输层17，其中，空穴注入层15可采用但不限于以下材料制成：聚酯碳酸、酞菁氧钛、m-MTDATA和2-TNATA，空穴传输层17可采用但不限于以下材料制成：TPD、NPB、PVK、Spiro-TPD和Spiro-NPB。具体的，可采用沉积工艺形成空穴注入层15和空穴传输层17。
在形成空穴注入层15和空穴传输层17之后，对膨胀变形后的形变层11进行恢复原状处理，以由偶氮苯基聚合物形成的形变层11为例，对膨胀变形后的形变层11进行绿光照射，形变层11体积变（如图5所示）小，形变层11的顶端与阳极层21之间的距离减少，最终形成的空穴注入层15和空穴传输层17是断裂、不连续（如图5所示），可阻断空穴在空穴注入层15和空穴传输层17的横向流动。
在一个示例中，对膨胀变形后的形变层11进行恢复原状处理的步骤之后，还包括步骤：
在覆盖在阳极层21上的空穴传输层17上形成发光层29。
需要说明的是，在覆盖在阳极层21上的空穴传输层17上形成发光层29，发光层29可采用但不限于以下材料制成：Alq3、Almq3、Blue和TBADN。具体的，可采用沉积工艺形成发光层29。
在一个示例中，在覆盖在阳极层21上的空穴传输层17上形成发光层29的步骤之后，还包括步骤：
在发光层29和空穴传输层17上形成电子传输层23。
需要说明的是，在发光层29和空穴传输层17上形成电子传输层23，电子传输层23可采用但不限于以下材料制成：Alq3、Almq3、DVPBi、TAZ、OXD、PBD、BND和PV。具体的，可采用沉积工艺形成电子传输层23。
在一个示例中，在发光层29和空穴传输层17上形成电子传输层23的步骤之后，还包括步骤：
在电子传输层23上形成电子注入层25。
需要说明的是，在电子传输层23上形成电子注入层25，电子注入层25可采用但不限于以下材料制成：LiF、MgP、MgF2和Al2O3。具体的，可采用沉积工艺形成电子注入层25。
在一个示例中，在电子传输层23上形成电子注入层25的步骤之后，还包括步骤：
在电子注入层25上形成阴极层27。
需要说明的是，在电子注入层25上形成阴极层27，阴极层27采用但不限于以下材料制成：Ag、Al、Li、Mg、Ca和In。具体的，可采用沉积工艺形成电子阴极层27。
本申请显示面板制作方法各实施例中，通过步骤：提供基板19；基板19上依次形成有阳极层21和像素定义层13；在像素定义层13上，形成形变层11；形变层11为由可膨胀变形且可恢复原状的材料形成的材料层；对形变层11进行膨胀变形处理；依次形成空穴注入层15和空穴传输层17；空穴注入层15和空穴传输层17覆盖在阳极层21和膨胀变形后的形变层11上；对膨胀变形后的形变层11进行恢复原状处理，使得在形成空穴注入层15和空穴传输层17之前，对形变层11进行膨胀形变处理，抬高形变层11顶端与阳极层21进行的距离，以便将空穴注入层15和空穴传输层17切断，并在形成空穴注入层15和空穴传输层17之后，将形变层11恢复原状，最终形成空穴注入层15和空穴传输层17是断开、不连续的，从而阻止空穴横向流动形成横向的泄漏电流，提高了像素发光的纯度，提高了显示效果。
在一个实施例中，本申请实施例还提供了一种显示装置，包括本申请显示面板各实施例所述的显示面板。
需要说明的是，该实施例中所述的显示面板与本申请显示面板各实施例所述的显示面板的相同，详情请参照本申请显示面板各实施例，此处不再赘述。
本申请显示面板，发光纯度高，显示效果好。
在一个实施例中，还提供了一种显示装置，包括采用本申请显示面板制作方法各实施例所述显示面板制作方法的制成的显示面板。
需要说明的是，该实施例中所述的显示面板制作方法与本申请显示面板制作方法各实施例所述的显示面板制作方法的相同，详情请参照本申请显示面板制作方法各实施例，此处不再赘述。
本申请显示装置，发光纯度高，显示效果好。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (11)

  1. 一种显示面板，其中，包括形变层；所述形变层为由可膨胀变形且可恢复原状的材料形成的材料层；
    所述形变层夹设在所述显示面板的像素定义层和空穴注入层之间；所述形变层用于在所述显示面板的制作过程中，断开所述显示面板的空穴注入层和空穴传输层。
  2. 根据权利要求1所述的显示面板，其中，所述形变层为由偶氮苯基聚合物形成的材料层。
  3. 一种显示面板制作方法，其中，包括以下步骤：
    提供基板；所述基板上依次形成有阳极层和像素定义层；
    在所述像素定义层上，形成形变层；所述形变层为由可膨胀变形且可恢复原状的材料形成的材料层；
    对所述形变层进行膨胀变形处理；
    依次形成空穴注入层和空穴传输层；所述空穴注入层和所述空穴传输层覆盖在所述阳极层和膨胀变形后的所述形变层上；
    对膨胀变形后的所述形变层进行恢复原状处理。
  4. 根据权利要求3所述的显示面板制作方法，其中，所述形变层为由偶氮苯基聚合物形成的材料层。
  5. 根据权利要求4所述的显示面板制作方法，其中，
    对所述形变层进行膨胀变形处理的步骤中：对所述形变层进行紫外光照射；
    对膨胀变形后的所述形变层进行恢复原状处理的步骤中：对膨胀变形后的所述形变层进行绿光照射。
  6. 根据权利要求3所述的显示面板制作方法，其中，对膨胀变形后的所述形变层进行恢复原状处理的步骤之后，还包括步骤：
    在覆盖在所述阳极层上的所述空穴传输层上形成发光层。
  7. 根据权利要求6所述的显示面板制作方法，其中，在覆盖在所述阳极层上的所述空穴传输层上形成发光层的步骤之后，还包括步骤：
    在所述发光层和所述空穴传输层上形成电子传输层。
  8. 根据权利要求7所述的显示面板制作方法，其中，在所述发光层和所述空穴传输层上形成电子传输层的步骤之后，还包括步骤：
    在所述电子传输层上形成电子注入层。
  9. 根据权利要求8所述的显示面板制作方法，其中，在所述电子传输层上形成电子注入层的步骤之后，还包括步骤：
    在所述电子注入层上形成阴极层。
  10. 一种显示装置，其中，包括、显示面板；
    所述显示面板包括形变层；所述形变层为由可膨胀变形且可恢复原状的材料形成的材料层；
    所述形变层夹设在所述显示面板的像素定义层和空穴注入层之间；所述形变层用于在所述显示面板的制作过程中，断开所述显示面板的空穴注入层和空穴传输层。
  11. 根据权利要求10所述的显示装置，其中，所述形变层为由偶氮苯基聚合物形成的材料层。
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