WO2022000698A1 - 有机发光二极管器件及其制作方法、显示装置 - Google Patents

有机发光二极管器件及其制作方法、显示装置 Download PDF

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Publication number
WO2022000698A1
WO2022000698A1 PCT/CN2020/106853 CN2020106853W WO2022000698A1 WO 2022000698 A1 WO2022000698 A1 WO 2022000698A1 CN 2020106853 W CN2020106853 W CN 2020106853W WO 2022000698 A1 WO2022000698 A1 WO 2022000698A1
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Prior art keywords
layer
light emitting
emitting diode
organic light
diode device
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PCT/CN2020/106853
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English (en)
French (fr)
Inventor
黄辉
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Tcl华星光电技术有限公司
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Priority to US15/734,897 priority Critical patent/US11956992B2/en
Publication of WO2022000698A1 publication Critical patent/WO2022000698A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the field of display technology, and in particular, to an organic light emitting diode device, a manufacturing method thereof, and a display device.
  • OLED organic light emitting diode
  • the existing organic light emitting diode device has the problem that the luminous efficiency of the organic light emitting diode device is reduced due to the coupling reaction between the photons emitted from the light emitting layer and the free electrons of the cathode and the generation of surface plasmon waves. Therefore, it is necessary to provide an organic light emitting diode, a method for manufacturing the same, and a display device to improve this defect.
  • the embodiments of the present application provide an organic light-emitting diode device, a method for manufacturing the same, and a display device, which are used to solve the problem of existing organic light-emitting diode devices due to the coupling reaction between photons emitted from the light-emitting layer and free electrons of the cathode, thereby generating surface plasmon excitation.
  • the elementary waves cause a problem that the luminous efficiency of the organic light emitting diode device is lowered.
  • the embodiments of the present application provide an organic light emitting diode device, including an anode layer, a hole transport layer, a light emitting layer, an electron transport layer, a functional layer and a cathode layer that are stacked in sequence;
  • the material of the functional layer includes metal sol, the metal sol contains metal nanoparticles, and the metal sol forms an uneven nanostructure on the surface of the functional layer near the cathode layer.
  • the metal nanoparticles include one or more of Au nanoparticles, Ag nanoparticles, or Al nanoparticles.
  • the thickness of the functional layer is between 5 and 30 nm.
  • the organic light emitting diode device further includes a buffer layer made of an organic material, and the buffer layer is disposed between the functional layer and the electron transport layer.
  • the organic material includes an epoxy resin material.
  • the thickness of the buffer layer is between 10 and 50 nm.
  • the organic light emitting diode device further includes a hole injection layer and an electron injection layer, the hole injection layer is disposed between the hole transport layer and the anode layer, and the electron injection layer is disposed between the hole transport layer and the anode layer.
  • a layer is disposed between the functional layer and the electron transport layer.
  • An embodiment of the present application provides a display device, including a device body and a display panel disposed on the device body, the display panel including a thin film transistor array substrate and a plurality of organic light emitting diodes disposed on the thin film transistor array substrate
  • the organic light emitting diode device comprises an anode layer, a hole transport layer, a light emitting layer, an electron transport layer, a functional layer and a cathode layer that are stacked in sequence;
  • the material of the functional layer includes metal sol, the metal sol contains metal nanoparticles, and the metal sol forms an uneven nanostructure on the surface of the functional layer near the cathode layer.
  • the metal nanoparticles include one or more of Au nanoparticles, Ag nanoparticles, or Al nanoparticles.
  • the thickness of the functional layer is between 5 and 30 nm.
  • the organic light emitting diode device further includes a buffer layer made of an organic material, and the buffer layer is disposed between the functional layer and the electron transport layer.
  • the organic material includes an epoxy resin material.
  • the thickness of the buffer layer is between 10 and 50 nm.
  • the organic light emitting diode device further includes a hole injection layer and an electron injection layer, the hole injection layer is disposed between the hole transport layer and the anode layer, and the electron injection layer is disposed between the hole transport layer and the anode layer.
  • a layer is disposed between the functional layer and the electron transport layer.
  • Embodiments of the present application also provide a method for fabricating an organic light-emitting diode device, including:
  • a layer of metal sol is coated on the side of the electron transport layer away from the light-emitting layer, the metal sol contains metal nanoparticles, the metal sol is cured to form a functional layer, and the functional layer is far away from the electrons A surface of one side of the transport layer forms an uneven nanostructure;
  • a cathode layer is prepared on the side of the functional layer remote from the electron transport layer.
  • a buffer layer is prepared on the side of the electron transport layer away from the light-emitting layer.
  • the material of the buffer layer includes epoxy resin material.
  • the thickness of the functional layer is between 5 and 30 nm.
  • the thickness of the buffer layer is between 10 and 50 nm.
  • the metal nanoparticles include one or more of Au nanoparticles, Ag nanoparticles, or Al nanoparticles.
  • a functional layer is added between the cathode layer and the electron transport layer.
  • the material of the functional layer includes metal sol, and the metal sol contains metal nanoparticles, so that the metal sol forms a functional layer after curing.
  • uneven nanostructures are formed on the surface of the functional layer close to the cathode layer.
  • the nanostructures can scatter the light emitted by the light-emitting layer, thereby changing the direction of the photons, making them and the cathode layer close to the functional layer.
  • the binding force of the surface electrons is reduced, and the coupling reaction of electrons and photons on the surface of the cathode layer is avoided to generate surface plasmon waves, thereby improving the light extraction efficiency of the organic light emitting diode.
  • FIG. 1 is a schematic structural diagram of an organic light emitting diode device according to an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of a second organic light emitting diode device according to an embodiment of the present application
  • FIG. 3 is a schematic structural diagram of a third organic light emitting diode device according to an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a display device provided by an embodiment of the present application.
  • FIG. 5 is a schematic flowchart of a method for fabricating an organic light emitting diode according to an embodiment of the present application
  • 6A to 6C are schematic structural diagrams of the organic light emitting diode device corresponding to the manufacturing method in FIG. 5 .
  • FIG. 1 is a schematic structural diagram of an organic light emitting diode device 1 provided in an embodiment of the present application.
  • the organic light emitting diode device 1 includes an anode layer 11 , a hole transport layer 12 , a light emitting layer 13 , an electron transport layer and layer 14 , functional layer 15 and cathode layer 16 .
  • the material of the functional layer 15 is metal sol, and the metal sol contains metal nanoparticles. While the metal sol is solidified to form the functional layer 15, an uneven nanostructure is formed on the surface of the functional layer 15 near the cathode layer 16, and the nanostructure has a scattering effect on the light emitted from the light-emitting layer 13 to the cathode layer 16, thereby The direction of the photons can be changed, so that the binding force between the photons and the surface electrons on the side of the cathode layer 16 close to the functional layer 15 is reduced, and the coupling reaction between the electrons and the photons on the surface of the cathode layer 16 can be avoided to generate surface plasmon waves, thereby improving the organic luminescence.
  • the metal conductive nanoparticles are Au conductive nanoparticles.
  • the metal conductive nanoparticles can also be Ag conductive nanoparticles or Al conductive nanoparticles, and in addition, they can also be conductive nanoparticles such as Au conductive nanoparticles, Ag conductive nanoparticles, and Al conductive nanoparticles.
  • the mixing of two or more conductive nanoparticles in the particles can also obtain the same technical effect as the embodiment of the present application, and can be selected according to actual needs, which is not limited here.
  • the film thickness of the functional layer 15 is 20 nm, and the film thickness of the cathode layer 16 can be appropriately reduced, so as to make the difference between the sum of the film thicknesses of the cathode layer 16 and the functional layer 15 and the addition of the functional layer 15
  • the film thickness of the cathode layer is the same, so that on the premise of not changing the cavity length of the organic light emitting diode device 1, the conductivity and electron injection performance inside the organic light emitting diode device 1 are ensured, and photons and free electrons on the surface of the cathode layer 16 are effectively reduced.
  • the influence of the plasmon wave on the surface of the cathode layer 16 is reduced, and the light extraction efficiency of the organic light emitting diode device is improved.
  • the film thickness of the functional layer 15 is not limited to the film thickness provided in the above embodiments, and in some embodiments, the film thickness of the functional layer 15 may also be 5 nm, 10 nm, 25 nm, or 30 nm.
  • the specific value of the thickness of the functional layer 15 can be set according to the actual needs. As long as it is between 5 and 30 nm, it can meet the condition that the cavity length remains unchanged, and the light penetration efficiency of the organic light emitting diode device 1 can be increased. Effect.
  • the embodiment of the present application further provides an organic light emitting diode, as shown in FIG. 2 , which is a schematic structural diagram of the organic light emitting diode 2 provided by the embodiment of the present application, and its structure is the same as the structure of the organic light emitting diode 1 provided by the above-mentioned embodiment. It is roughly the same, including an anode layer 21, a hole transport layer 22, a light-emitting layer 23, an electron transport layer 24, a functional layer 25, and a cathode layer 26 that are stacked in sequence. The difference is that the organic light-emitting diodes provided in the embodiments of the present application 2 is also provided with a buffer layer 27 made of organic materials, and the buffer layer 27 is arranged between the functional layer 25 and the electron transport layer 24.
  • the material of the buffer layer 27 is an organic material.
  • the buffer layer 27 made of organic material is disposed between the electron transport layer 24 and the functional layer 25 to protect the electron transport layer 24 and the light-emitting layer 23 and other film layers, and avoid film layers such as the electron transport layer 24 and the light-emitting layer 23 Destroyed during the process of forming the functional layer 25 and the cathode layer 26 .
  • the organic material is epoxy resin, so that the good adhesion, mechanical properties and stability of the epoxy resin material can be used to protect the film layers such as the electron transport layer 24 and the light-emitting layer 23 and prevent the function of The layer 25 and the electron transport layer 24 may be separated and peeled off.
  • the organic material may also be other materials with the same or similar properties as epoxy resin, which is not limited here.
  • the film thickness of the buffer layer 27 is 10 nm
  • the film thickness of the functional layer 25 is 10 nm
  • the film thickness of the cathode layer 26 can be compared with the original film thickness.
  • the film thicknesses of the buffer layer 27, the functional layer 25 and the cathode layer 26 are not limited to the film thicknesses provided in the above embodiments.
  • the film thickness of the buffer layer 27 is between 10 and 50 nm.
  • the film thickness of the functional layer 25 is between 5 and 30 nm
  • the film thickness of the cathode layer 26 is between 20 and 100 nm, which can satisfy the condition that the cavity length remains unchanged, and realize the increase of the organic light emitting diode device. 2 The effect of light penetration efficiency.
  • the material of the cathode layer 26 may be metal or metal oxide.
  • the material of the cathode layer 26 is a metal oxide, such as metal oxides such as ZnO or IZO.
  • the material of the cathode layer 26 may also be a metal material or a stacked structure formed of metal materials, which is not limited here.
  • the organic light emitting diode device may further include a hole injection layer 28 and an electron injection layer 29.
  • the hole injection layer 28 is arranged between the hole transport layer 22 and the anode layer 21, and the electron injection layer 29 is arranged between the functional layer 25 and the electron transport layer 24.
  • the electron injection layer 29 should be located in the buffer layer. 27 and the electron transport layer 24.
  • the light emitting diode device 2 may also include other film layers with auxiliary functions besides the hole injection layer 27 and the electron injection layer 28, which can be set according to actual needs, which will not be described here. limit.
  • a functional layer is added between the cathode layer and the electron transport layer.
  • the material of the functional layer includes metal sol, and the metal sol contains metal nanoparticles, so that the metal sol forms a functional layer after curing.
  • uneven nanostructures are formed on the surface of the functional layer close to the cathode layer.
  • the nanostructures can scatter the light emitted by the light-emitting layer, thereby changing the direction of the photons, making them and the cathode layer close to the functional layer.
  • the binding force of the surface electrons is reduced, and the coupling reaction of electrons and photons on the surface of the cathode layer is avoided to generate surface plasmon waves, thereby improving the light extraction efficiency of the organic light emitting diode.
  • FIG. 4 is a schematic structural diagram of a display device 3 according to an embodiment of the present application, the display device 3 includes a device body 31 and a display panel 32 disposed on the device body 31 , and the display panel 32 includes a thin film transistor array substrate 321 and a plurality of organic light emitting diode devices 322 disposed on the thin film transistor array substrate 321, and the organic light emitting diode devices 322 are the organic light emitting diode devices provided in the above embodiments.
  • the display device 3 provided by the embodiment of the present application can also achieve the same technical effect as the organic light emitting diode device provided by the above-mentioned embodiment, which is not repeated here.
  • FIG. 5 is a schematic flowchart of the method for fabricating an organic light emitting diode device provided in an embodiment of the present application.
  • 6A to 6C are schematic structural diagrams of an organic light emitting diode device corresponding to a manufacturing method provided by an embodiment of the present application.
  • Step S1 as shown in FIG. 6A , a substrate 40 is provided, and an anode layer 41 , a hole transport layer 42 , a light-emitting layer 43 and an electron transport layer 44 are formed on the substrate 40 in sequence;
  • Step S2 as shown in FIG. 6B , coat a layer of metal sol on the side of the electron transport layer 44 away from the light-emitting layer 43 , the metal sol contains metal nanoparticles, and the metal sol solidifies to form a functional layer 45 and form uneven nanostructures on the surface of the functional layer 45 away from the electron transport layer 44; and
  • Step S3 as shown in FIG. 6C , a cathode layer 46 is prepared on the side of the functional layer 45 away from the electron transport layer 44 .
  • the process of forming the anode layer 41 , the hole transport layer 42 , the light emitting layer 43 and the electron transport layer 44 in the step S1 may adopt the process of preparing the above-mentioned film layers in the prior art , there is no restriction here.
  • the method of forming a layer of metal sol on the side of the electron transport layer 44 away from the light emitting layer 43 includes coating, spin coating or inkjet printing.
  • the metal sol is directly coated on the surface of the electron transport layer 44 by means of inkjet printing.
  • the metal nanoparticles are Au nanoparticles
  • the nanostructure formed by the solidification of the metal sol has a scattering effect on the light emitted from the light-emitting layer 43 to the cathode layer 46, so that the direction of the photons can be changed,
  • the binding force between photons and the surface electrons on the side of the cathode layer 46 close to the functional layer 45 is reduced, so as to avoid the coupling reaction of electrons and photons on the surface of the cathode layer 46 to generate surface plasmon waves, thereby improving the light extraction efficiency of the organic light emitting diode.
  • the metal nanoparticles can also be Ag nanoparticles or Al nanoparticles, and in addition, they can also be two or two of conductive nanoparticles such as Au nanoparticles, Ag nanoparticles, and Al nanoparticles. Mixing of various conductive nanoparticles can also achieve the same technical effect as the embodiment of the present application, which can be selected according to actual needs, which is not limited here.
  • a buffer layer (not shown in the figure) is prepared on the side of the electron transport layer 44 away from the light emitting layer 43 .
  • the material of the buffer layer is an organic material.
  • the buffer layer made of organic material is arranged between the electron transport layer 44 and the functional layer 45 to protect the electron transport layer 44 and the light emitting layer 43 and other film layers, so as to avoid the electron transport layer 44 and the light emitting layer 43 and other film layers in the
  • the functional layer 45 and the cathode layer 46 are destroyed during the process of forming the functional layer 45 .
  • the organic material is epoxy resin, so that the good adhesion, mechanical properties and stability of the epoxy resin material can be used to protect the film layers such as the electron transport layer 44 and the light emitting layer 43, and at the same time prevent the function of The layer 45 and the electron transport layer 44 may be separated and peeled off.
  • the organic material may also be other materials with the same or similar properties as epoxy resin, which is not limited here.
  • the film thickness of the buffer layer is 10 nm
  • the film thickness of the functional layer 45 is 10 nm
  • the film thickness of the cathode layer 46 can be appropriately compared with the original film thickness.
  • the total film thickness of the buffer layer, the functional layer 45 and the cathode layer 46 can be the same as the film thickness of the original cathode layer, so as to ensure that the cavity length of the organic light emitting diode device remains unchanged, so that the light emitting layer 43 emits
  • the light of the light can be superimposed in the organic light emitting diode device and enhance the light intensity through the characteristics of light.
  • the film thicknesses of the buffer layer, the functional layer 45 and the cathode layer 46 are not limited to the film thicknesses provided in the above-mentioned embodiments.
  • the film thickness of the buffer layer is between 10 and 50 nm.
  • the film thickness of the layer 45 is between 5 and 30 nm, and the film thickness of the cathode layer 46 is between 20 and 100 nm, which can satisfy the condition that the cavity length is kept constant and increase the light transmission rate of the organic light emitting diode device. effect of penetration efficiency.
  • a functional layer is added between the cathode layer and the light-emitting layer.
  • the material of the functional layer includes an acidic metal sol, and the metal sol contains metal nanoparticles, so that the metal sol is in the
  • an uneven nanostructure is formed on the surface of the functional layer close to the cathode layer.
  • the nanostructure can scatter the light emitted by the light-emitting layer, thereby changing the direction of the photon and making it close to the cathode layer.
  • the bonding force of the surface electrons on one side of the layer is reduced, and the coupling reaction of electrons and photons on the surface of the cathode layer is avoided to generate surface plasmon waves, thereby improving the light extraction efficiency of the organic light emitting diode.

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Abstract

本申请提供一种有机发光二极管器件及其制作方法、显示装置，所述有机发光二极管器件包括发光层、功能层和阴极层，功能层的材料包括含有金属纳米颗粒的金属溶胶，金属溶胶在功能层表面形成凹凸不平的纳米结构，可对发光层的光线产生散射作用，使其与阴极层表面电子的结合力下降，避免产生表面等离激元波，从而提高出光效率。

Description

有机发光二极管器件及其制作方法、显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种有机发光二极管器件及其制作方法、显示装置。
 背景技术
现有有机发光二极管（organic light emitting diode, OLED）器件内部存在光损失，导致大部分的光都无法有效出射到有机发光二极管器件外部，而主要大部分的损失在于从发光层出射的光子与阴极的自由电子发生耦合反应并产生表面等离激元波，使得这部分的光无法到达有机发光二极管器件外部，导致有机发光二极管器件整体的发光效率下降。
 技术问题
目前大部分的改善方法都是通过增加发光层与阴极之间的距离，使两者之间的影响降低，从而改善发光效率。但是仅仅增加发光层与阴极之间的距离会造成有机发光二极管器件内部膜层缺陷的增加、有机发光二极管器件特定的腔长发生变化，反而会使有机发光二极管器件内部产生膜层分离、脱落的情况，并使得有机发光二极管器件内部的光线被减弱，导致有机发光二极管器件的出光效率降低。
综上所述，现有有机发光二极管器件存在由于发光层出射的光子与阴极的自由电子发生耦合反应并产生表面等离激元波导致有机发光二极管器件的发光效率降低的问题。故，有必要提供一种有机发光二极管及其制作方法、显示装置来改善这一缺陷。
 技术解决方案
本申请实施例提供一种有机发光二极管器件及其制作方法、显示装置，用于解决现有有机发光二极管器件存在的由于发光层出射的光子与阴极的自由电子发生耦合反应并产生表面等离激元波导致有机发光二极管器件的发光效率降低的问题。
本申请实施例提供一种有机发光二极管器件，包括依次层叠设置的阳极层、空穴传输层、发光层、电子传输层、功能层和阴极层；
其中，所述功能层的材料包括金属溶胶，所述金属溶胶内含有金属纳米颗粒，所述金属溶胶在所述功能层靠近所述阴极层一侧的表面形成凹凸不平的纳米结构。
根据本申请一实施例，所述金属纳米颗粒包括Au纳米颗粒、Ag纳米颗粒或者Al纳米颗粒中的一种或者多种。
根据本申请一实施例，所述功能层的膜层厚度介于5~30nm之间。
根据本申请一实施例，所述有机发光二极管器件还包括由有机材料制备形成的缓冲层，所述缓冲层设置于所述功能层与所述电子传输层之间。
根据本申请一实施例，所述有机材料包括环氧树脂材料。
根据本申请一实施例，所述缓冲层的膜层厚度介于10~50nm之间。
根据本申请一实施例，所述有机发光二极管器件还包括空穴注入层和电子注入层，所述空穴注入层设置于所述空穴传输层与所述阳极层之间，所述电子注入层设置于所述功能层与所述电子传输层之间。
本申请实施例提供一种显示装置，包括装置主体和设置于所述装置主体上的显示面板，所述显示面板包括薄膜晶体管阵列基板和设置于所述薄膜晶体管阵列基板上的多个有机发光二极管器件，所述有机发光二极管器件包括依次层叠设置的阳极层、空穴传输层、发光层、电子传输层、功能层和阴极层；
其中，所述功能层的材料包括金属溶胶，所述金属溶胶内含有金属纳米颗粒，所述金属溶胶在所述功能层靠近所述阴极层一侧的表面形成凹凸不平的纳米结构。
根据本申请一实施例，所述金属纳米颗粒包括Au纳米颗粒、Ag纳米颗粒或者Al纳米颗粒中的一种或者多种。
根据本申请一实施例，所述功能层的膜层厚度介于5~30nm之间。
根据本申请一实施例，所述有机发光二极管器件还包括由有机材料制备形成的缓冲层，所述缓冲层设置于所述功能层与所述电子传输层之间。
根据本申请一实施例，所述有机材料包括环氧树脂材料。
根据本申请一实施例，所述缓冲层的膜层厚度介于10~50nm之间。
根据本申请一实施例，所述有机发光二极管器件还包括空穴注入层和电子注入层，所述空穴注入层设置于所述空穴传输层与所述阳极层之间，所述电子注入层设置于所述功能层与所述电子传输层之间。
本申请实施例还提供一种有机发光二极管器件的制作方法，包括：
提供衬底，在所述衬底上依次形成阳极层、空穴传输层、发光层和电子传输层；
在所述电子传输层远离所述发光层的一侧上涂布一层金属溶胶，所述金属溶胶内含有金属纳米颗粒，所述金属溶胶固化形成功能层并在所述功能层远离所述电子传输层的一侧表面形成凹凸不平的纳米结构；以及
在所述功能层远离所述电子传输层的一侧上制备阴极层。
根据本申请一实施例，在制备所述功能层之前，在所述电子传输层远离所述发光层的一侧上制备缓冲层。
根据本申请一实施例，所述缓冲层的材料包括环氧树脂材料。
根据本申请一实施例，所述功能层的膜层厚度介于5~30nm之间。
根据本申请一实施例，所述缓冲层的膜层厚度介于10~50nm之间。
根据本申请一实施例，所述金属纳米颗粒包括Au纳米颗粒、Ag纳米颗粒或者Al纳米颗粒中的一种或者多种。
 有益效果
本申请实施例的有益效果：本申请实施例通过在阴极层与电子传输层之间增设功能层，功能层的材料包括金属溶胶，金属溶胶内含有金属纳米颗粒，使得金属溶胶在固化形成功能层的同时在功能层靠近阴极层一侧的表面形成凹凸不平的纳米结构，纳米结构可对由发光层发出的光线产生散射作用，从而改变光子的方向，使其与阴极层靠近功能层一侧的表面电子的结合力下降，避免阴极层表面的电子与光子发生耦合反应产生表面等离激元波，从而提高有机发光二极管的出光效率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的有机发光二极管器件的结构示意图；
图2为本申请实施例提供的第二种有机发光二极管器件的结构示意图；
图3为本申请实施例提供的第三种有机发光二极管器件的结构示意图；
图4为本申请实施例提供的显示装置的结构示意图；
图5为本申请实施例提供的有机发光二极管的制作方法的流程示意图；
图6A~图6C为与图5中制作方法对应的有机发光二极管器件的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
下面结合附图和具体实施例对本申请做进一步的说明：
本申请实施例提供一种有机发光二极管器件，下面结合图1进行详细说明。如图1所示，图1为本申请实施例提供的有机发光二极管器件1的结构示意图，有机发光二极管器件1包括依次层叠设置的阳极层11、空穴传输层12、发光层13、电子传输层14、功能层15和阴极层16。
在本申请实施例中，功能层15的材料为金属溶胶，金属溶胶内含有金属纳米颗粒。金属溶胶在固化形成功能层15的同时并在功能层15靠近阴极层16一侧的表面形成有凹凸不平的纳米结构，纳米结构对由发光层13射向阴极层16的光线具有散射作用，从而可以改变光子的方向，使光子与阴极层16靠近功能层15一侧的表面电子的结合力下降，避免阴极层16表面的电子与光子发生耦合反应产生表面等离激元波，从而提高有机发光二极管1的出光效率。
具体地，在本申请实施例中，所述金属导电纳米颗粒为Au导电纳米颗粒。当然，在一些实施例中，所述金属导电纳米颗粒也可以为Ag导电纳米颗粒或者为Al导电纳米颗粒，此外，还可以为Au导电纳米颗粒、Ag导电纳米颗粒和Al导电纳米颗粒等导电纳米颗粒中的两种或者多种导电纳米颗粒的混合，其同样可以获得与本申请实施例相同的技术效果，可以根据实际需求进行选择，此处不做限制。
在本申请实施例中，功能层15的膜层厚度为20nm，阴极层16的膜层厚度可以适当减薄，以使阴极层16与功能层15膜层厚度之和与添加功能层15之间阴极层的膜层厚度相同，从而在不改变有机发光二极管器件1腔长的前提下，保证有机发光二极管器件1内部的导电性能以及电子注入性能的同时，有效减少光子与阴极层16表面自由电子的结合，降低阴极层16表面等离子激元波的影响，并提高有机发光二极管器件的出光效率。
当然，功能层15的膜层厚度不仅限于上述实施例所提供的膜层厚度，在一些实施例中，功能层15的膜层厚度也可以为5nm、10nm、25nm或者30nm等。功能层15膜层厚度的具体数值可以根据实际需求进行设定，只要介于5~30nm之间即可满足保证腔长不变的条件下，实现增大有机发光二极管器件1光线穿透效率的效果。
本申请实施例还提供一种有机发光二极管，如图2所示，图2为本申请实施例提供的有机发光二极管2的结构示意图，其结构与上述实施例所提供的有机发光二极管1的结构大致相同，包括依次层叠设置的阳极层21、空穴传输层22、发光层23、电子传输层24、功能层25和阴极层26，区别之处在于，本申请实施例所提供的有机发光二极管2还设有由有机材料制备而成的缓冲层27，缓冲层27设置于功能层25与电子传输层24之间。
具体地，在本申请实施例中，所述缓冲层27的材料为有机材料。通过将材料为有机材料的缓冲层27设置于电子传输层24与功能层25之间，用于保护电子传输层24和发光层23等膜层，避免电子传输层24和发光层23等膜层在形成所述功能层25和阴极层26的制程中被破坏。
优选的，所述有机材料为环氧树脂，以此利用环氧树脂材料良好的粘附性能、力学性能以及稳定性，在保护电子传输层24和发光层23等膜层的同时，可以防止功能层25与电子传输层24发生膜层分离、脱落的情况。当然在一些实施例中，所述有机材料还可以为其他性质与环氧树脂相同或者类似的材料，此处不做限制。
具体地，在本申请实施例中，所述缓冲层27的膜层厚度为10nm，所述功能层25的膜层厚度为10nm，阴极层26的膜层厚度相较于原有膜层厚度可以适当减少，这样可以让缓冲层27与功能层25以及阴极层26的总膜层厚度与原有阴极层的膜层厚度相同，以此保证有机发光二极管器件2的腔长保持不变，使得发光层23发出的光线可以通过光的特性在有机发光二极管器件2内进行叠加并增强光线强度。
当然，缓冲层27、功能层25以及阴极层26的膜层厚度并不仅限于上述实施例所提供的膜层厚度，在一些实施例中，缓冲层27的膜层厚度介于10~50nm之间，功能层25的膜层厚度介于5~30nm之间，阴极层26的膜层厚度介于20~100nm之间，即可满足保证腔长不变的条件下，实现增大有机发光二极管器件2光线穿透效率的效果。
可选的，本申请实施例中，所述阴极层26的材料可以为金属或金属氧化物。优选的，所述阴极层26的材料为金属氧化物，如ZnO或者IZO等金属氧化物。当然，在一些实施例中，所述阴极层26的材料也可以为金属材料或者金属材料所形成的叠层结构，此处不做限制。
在一些实施例中，如图3所示，图3为本申请实施例提供的另一种有机发光二极管器件的结构示意图，所述有机发光二极管器件还可以包括空穴注入层28和电子注入层29，空穴注入层28设置于空穴传输层22与阳极层21之间，电子注入层29设置于功能层25与电子传输层24之间，具体的所述电子注入层29应位于缓冲层27与电子传输层24之间。当然，在另一些实施例中，发光二级管器件2还可以包括除空穴注入层27和电子注入层28之外其他具有辅助功能的膜层，可以根据实际需求进行设置，此处不做限制。
本申请实施例的有益效果：本申请实施例通过在阴极层与电子传输层之间增设功能层，功能层的材料包括金属溶胶，金属溶胶内含有金属纳米颗粒，使得金属溶胶在固化形成功能层的同时在功能层靠近阴极层一侧的表面形成凹凸不平的纳米结构，纳米结构可对由发光层发出的光线产生散射作用，从而改变光子的方向，使其与阴极层靠近功能层一侧的表面电子的结合力下降，避免阴极层表面的电子与光子发生耦合反应产生表面等离激元波，从而提高有机发光二极管的出光效率。
本申请实施例还提供一种显示装置，下面结合图4进行详细说明。图4为本申请实施例所提供的显示装置3的结构示意图，所述显示装置3包括装置主体31和设置于所述装置主体31上的显示面板32，所述显示面板32包括薄膜晶体管阵列基板321和设置于薄膜晶体管阵列基板321上的多个有机发光二极管器件322，所述有机发光二极管器件322为上述实施例所提供的有机发光二极管器件。本申请实施例所提供的显示装置3同样能够实现与上述实施例所提供的有机发光二极管器件相同的技术效果，此处不再赘述。
本申请实施例还提供一种有机发光二极管器件的制作方法，下面结合图5以及图6A至图6C进行详细说明，图5为本将申请实施例提供的有机发光二极管器件的制作方法的流程示意图，图6A至图6C为本申请实施例所提供的与制作方法对应的有机发光二极管器件的结构示意图。
本申请实施例所提供的有机发光二极管器件的制作方法包括：
步骤S1：如图6A所示，提供衬底40，在所述衬底40上依次形成阳极层41、空穴传输层42、发光层43和电子传输层44；
步骤S2：如图6B所示，在所述电子传输层44远离所述发光层43的一侧上涂布一层金属溶胶，所述金属溶胶内含有金属纳米颗粒，所述金属溶胶固化形成功能层45并在所述功能层45远离所述电子传输层44的一侧表面形成凹凸不平的纳米结构；以及
步骤S3：如图6C所示，在所述功能层45远离所述电子传输层44的一侧上制备阴极层46。
在本申请实施例中，所述步骤S1中形成制备形成所述阳极层41、空穴传输层42、发光层43和电子传输层44的制程可以采用现有技术中制备上述各膜层的制程，此处不做限制。
所述步骤S2中，在电子传输层44远离发光层43的一侧上形成一层金属溶胶的方法包括涂布、旋涂或者喷墨打印的方式。优选的，所述步骤S2中，采用喷墨打印的方式将金属溶胶直接涂布于电子传输层44的表面上。
进一步的，所述步骤S2中，所述金属纳米颗粒为Au纳米颗粒，金属溶胶固化所形成的纳米结构对由发光层43射向阴极层46的光线具有散射作用，从而可以改变光子的方向，使光子与阴极层46靠近功能层45一侧的表面电子的结合力下降，避免阴极层46表面的电子与光子发生耦合反应产生表面等离激元波，从而提高有机发光二极管的出光效率。
当然，在一些实施例中，所述金属纳米颗粒也可以为Ag纳米颗粒或者为Al纳米颗粒，此外，还可以为Au纳米颗粒、Ag纳米颗粒和Al纳米颗粒等导电纳米颗粒中的两种或者多种导电纳米颗粒的混合，其同样可以获得与本申请实施例相同的技术效果，可以根据实际需求进行选择，此处不做限制。
在本申请实施例中，在步骤S2制备所述功能层45之前，在所述电子传输层44远离发光层43的一侧上制备缓冲层（图中未示出）。
在本申请实施例中，所述缓冲层的材料为有机材料。通过将材料为有机材料的缓冲层设置于电子传输层44与功能层45之间，用于保护电子传输层44和发光层43等膜层，避免电子传输层44和发光层43等膜层在形成所述功能层45和阴极层46的制程中被破坏。
优选的，所述有机材料为环氧树脂，以此利用环氧树脂材料良好的粘附性能、力学性能以及稳定性，在保护电子传输层44和发光层43等膜层的同时，可以防止功能层45与电子传输层44发生膜层分离、脱落的情况。当然在一些实施例中，所述有机材料还可以为其他性质与环氧树脂相同或者类似的材料，此处不做限制。
具体地，在本申请实施例中，所述缓冲层的膜层厚度为10nm，所述功能层45的膜层厚度为10nm，阴极层46的膜层厚度相较于原有膜层厚度可以适当减少，这样可以让缓冲层与功能层45以及阴极层46的总膜层厚度与原有阴极层的膜层厚度相同，以此保证有机发光二极管器件的腔长保持不变，使得发光层43发出的光线可以通过光的特性在有机发光二极管器件内进行叠加并增强光线强度。
当然，缓冲层、功能层45以及阴极层46的膜层厚度并不仅限于上述实施例所提供的膜层厚度，在一些实施例中，缓冲层的膜层厚度介于10~50nm之间，功能层45的膜层厚度介于5~30nm之间，阴极层46的膜层厚度介于20~100nm之间，即可满足保证腔长不变的条件下，实现增大有机发光二极管器件光线穿透效率的效果。
本申请实施例的有益效果：本申请实施例提供的制作方法通过在阴极层与发光层之间增设功能层，功能层的材料包括酸性金属溶胶，金属溶胶内含有金属纳米颗粒，使得金属溶胶在固化形成功能层的同时在功能层靠近阴极层一侧的表面形成凹凸不平的纳米结构，纳米结构可对由发光层发出的光线产生散射作用，从而改变光子的方向，使其与阴极层靠近功能层一侧的表面电子的结合力下降，避免阴极层表面的电子与光子发生耦合反应产生表面等离激元波，从而提高有机发光二极管的出光效率。
综上所述，虽然本申请以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为基准。

Claims (20)

  1. 一种有机发光二极管器件，包括依次层叠设置的阳极层、空穴传输层、发光层、电子传输层、功能层和阴极层；
    其中，所述功能层的材料包括金属溶胶，所述金属溶胶内含有金属纳米颗粒，所述金属溶胶在所述功能层靠近所述阴极层一侧的表面形成凹凸不平的纳米结构。
  2. 如权利要求1所述的有机发光二极管器件，其中，所述金属纳米颗粒包括Au纳米颗粒、Ag纳米颗粒或者Al纳米颗粒中的一种或者多种。
  3. 如权利要求1所述的发光二极管器件，其中，所述功能层的膜层厚度介于5~30nm之间。
  4. 如权利要求1所述的有机发光二极管器件，其中，所述有机发光二极管器件还包括由有机材料制备形成的缓冲层，所述缓冲层设置于所述功能层与所述电子传输层之间。
  5. 如权利要求4所述的有机发光二极管器件，其中，所述有机材料包括环氧树脂材料。
  6. 如权利要求4所述的有机发光二极管器件，其中，所述缓冲层的膜层厚度介于10~50nm之间。
  7. 如权利要求1所述的有机发光二极管器件，其中，所述有机发光二极管器件还包括空穴注入层和电子注入层，所述空穴注入层设置于所述空穴传输层与所述阳极层之间，所述电子注入层设置于所述功能层与所述电子传输层之间。
  8. 一种显示装置，包括装置主体和设置于所述装置主体上的显示面板，所述显示面板包括薄膜晶体管阵列基板和设置于所述薄膜晶体管阵列基板上的多个有机发光二极管器件，所述有机发光二极管器件包括依次层叠设置的阳极层、空穴传输层、发光层、电子传输层、功能层和阴极层；
    其中，所述功能层的材料包括金属溶胶，所述金属溶胶内含有金属纳米颗粒，所述金属溶胶在所述功能层靠近所述阴极层一侧的表面形成凹凸不平的纳米结构。
  9. 如权利要求8所述的显示装置，其中，所述金属纳米颗粒包括Au纳米颗粒、Ag纳米颗粒或者Al纳米颗粒中的一种或者多种。
  10. 如权利要求8所述的显示装置，其中，所述功能层的膜层厚度介于5~30nm之间。
  11. 如权利要求8所述的显示装置，其中，所述有机发光二极管器件还包括由有机材料制备形成的缓冲层，所述缓冲层设置于所述功能层与所述电子传输层之间。
  12. 如权利要求11所述的显示装置，其中，所述有机材料包括环氧树脂材料。
  13. 如权利要求11所述的显示装置，其中，所述缓冲层的膜层厚度介于10~50nm之间。
  14. 如权利要求8所述的显示装置，其中，所述有机发光二极管器件还包括空穴注入层和电子注入层，所述空穴注入层设置于所述空穴传输层与所述阳极层之间，所述电子注入层设置于所述功能层与所述电子传输层之间。
  15. 一种有机发光二极管器件的制作方法，包括：
    提供衬底，在所述衬底上依次形成阳极层、空穴传输层、发光层和电子传输层；
    在所述电子传输层远离所述发光层的一侧上涂布一层金属溶胶，所述金属溶胶内含有金属纳米颗粒，所述金属溶胶固化形成功能层并在所述功能层远离所述电子传输层的一侧表面形成凹凸不平的纳米结构；以及
    在所述功能层远离所述电子传输层的一侧上制备阴极层。
  16. 如权利要求15所述的有机发光二极管器件的制作方法，其中，在制备所述功能层之前，在所述电子传输层远离所述发光层的一侧上制备缓冲层。
  17. 如权利要求16所述的有机发光二极管器件的制作方法，其中，所述缓冲层的材料包括环氧树脂材料。
  18. 如权利要求16所述的有机发光二极管器件的制作方法，其中，所述功能层的膜层厚度介于5~30nm之间。
  19. 如权利要求16所述的有机发光二极管器件的制作方法，其中，所述缓冲层的膜层厚度介于10~50nm之间。
  20. 如权利要求15所述的有机发光二极管器件的制作方法，其中，所述金属纳米颗粒包括Au纳米颗粒、Ag纳米颗粒或者Al纳米颗粒中的一种或者多种。
PCT/CN2020/106853 2020-07-02 2020-08-04 有机发光二极管器件及其制作方法、显示装置 WO2022000698A1 (zh)

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CN113410404A (zh) * 2021-06-01 2021-09-17 深圳大学 有机发光二极管器件及其制造方法和显示面板
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