WO2022000620A1 - 容性耦合结构及介质波导滤波器 - Google Patents

容性耦合结构及介质波导滤波器 Download PDF

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Publication number
WO2022000620A1
WO2022000620A1 PCT/CN2020/103448 CN2020103448W WO2022000620A1 WO 2022000620 A1 WO2022000620 A1 WO 2022000620A1 CN 2020103448 W CN2020103448 W CN 2020103448W WO 2022000620 A1 WO2022000620 A1 WO 2022000620A1
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Prior art keywords
blind
dielectric body
coupling
holes
blind holes
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PCT/CN2020/103448
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English (en)
French (fr)
Inventor
李陆龙
姜华
韩莉
岳月华
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AAC Technologies Holdings Shenzhen Co Ltd
AAC Module Technologies Changzhou Co Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
AAC Module Technologies Changzhou Co Ltd
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Publication of WO2022000620A1 publication Critical patent/WO2022000620A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2002—Dielectric waveguide filters

Definitions

  • the present invention relates to the technical field of filters, in particular to a capacitive coupling structure and a dielectric waveguide filter.
  • the ceramic dielectric waveguide filter has a smaller volume because the electromagnetic wave resonance occurs inside the dielectric material, and the dielectric constant of the material itself is generally 20 to 50. At the same time, the ceramic dielectric waveguide filter has the advantages of high Q value, good frequency selection characteristics, good operating frequency stability, and low insertion loss.
  • Existing dielectric filters basically achieve good frequency selection characteristics by adding transmission zeros, and the generation of transmission zeros generally requires a capacitive coupling structure.
  • the current scheme generally realizes capacitive coupling through deep blind holes whose depth exceeds 1/2 of the thickness of the dielectric body or double blind holes with upper and lower symmetry.
  • the thickness of the bottom of the blind hole and the surface of the dielectric body is very thin, which greatly affects the production efficiency and yield in the pressing and sintering stages of the dielectric body during the production process, resulting in material waste and reduced production efficiency.
  • the purpose of the present invention is to provide a capacitive coupling structure and a dielectric filter of a dielectric waveguide filter, which have less depth of blind holes and improved productivity and yield compared with conventional blind holes.
  • a capacitive coupling structure of a dielectric waveguide filter provided in this embodiment includes a dielectric body, and the dielectric body is provided with two resonance parts arranged on the same side and respectively provided with tuning blind holes. It is characterized in that the The dielectric body is further provided with two blind coupling holes located on opposite sides of the connecting lines of the two blind tuning holes and arranged staggered, wherein the depth of the blind coupling holes is greater than half of the thickness of the dielectric body.
  • the dielectric body has a first side provided with two blind tuning holes, and a second side opposite to the first side.
  • the two blind coupling holes are respectively located on the first side and the second side of the dielectric body.
  • the blind coupling holes are located on the same side of the dielectric body where the blind coupling holes are opened, and the other blind coupling holes are located on the opposite side of the side where the blind coupling holes are opened in the dielectric body.
  • both the tuning blind holes and the coupling blind holes are arranged in a circle, an ellipse, or a polygon.
  • the surface of the dielectric body, the surface of the tuning blind hole and the surface of the coupling blind hole are all covered with a conductive layer.
  • the material of the conductive layer is silver or copper.
  • a dielectric waveguide filter is provided, including the above capacitive coupling structure.
  • the double-coupling blind holes of the present invention are arranged oppositely on both sides or on the same side to generate a pair of zero points, which improves the out-of-band suppression performance.
  • the thickness of the surface of the dielectric body is thicker, which is conducive to improving the product yield in the stages of pressing and sintering of the dielectric body in the production process, and the double-coupling blind hole reduces the weight of the filter, which is conducive to lightweight.
  • FIG. 1 is a front view of a capacitive coupling structure in an embodiment of the present invention
  • FIG. 2 is a rear view of a capacitive coupling structure in an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of the capacitive coupling structure in the embodiment of the present invention along the direction A-A in FIG. 2;
  • FIG. 4 is a perspective view of a capacitive coupling structure in an embodiment of the present invention.
  • FIG. 5 is a perspective view of a structure of a dielectric waveguide filter in an embodiment of the present invention.
  • FIG. 6 is another perspective view of the structure of the dielectric waveguide filter in the embodiment of the present invention.
  • FIG. 7 is another perspective view of a dielectric waveguide filter structure in an embodiment of the present invention.
  • FIG. 8 is a performance diagram of a capacitive coupling structure in an embodiment of the present invention.
  • FIG. 9 is an overall performance diagram of a dielectric waveguide filter structure in an embodiment of the present invention.
  • the present invention discloses a capacitive coupling structure, which includes a dielectric body, the dielectric body is provided with two resonance parts arranged on the same side and respectively provided with tuning blind holes, and the dielectric body is further provided with Two blind coupling holes located on opposite sides of the connecting lines of the two blind tuning holes and arranged staggered, wherein the depth of the blind coupling holes is greater than half of the thickness of the dielectric body.
  • the two blind coupling vias are the first blind coupling via 7 and the blind blind coupling 9 respectively.
  • the two blind coupling holes 7 and 9 are arranged opposite to each other, and the two blind coupling holes 7 and 9 are respectively located on the front or back of the dielectric body.
  • the two blind coupling holes 7 and 9 are shallow blind holes, and the two blind coupling holes are staggered. , whose projections have no overlapping areas.
  • the staggered arrangement of the double-coupling blind vias 7 and 9 of the present invention can generate a pair of zero points and improve the out-of-band suppression performance.
  • the thickness between the bottom of the blind hole and the surface of the medium body is thicker, the structural strength is stronger, the density of the powder is easier to control during dry pressing, and it is not easy to deform during sintering, which is conducive to improving the production process.
  • the double-coupling blind hole reduces the weight of the filter, which is conducive to light weight.
  • the dielectric body has a first side provided with two tuning blind holes, and a second side opposite to the first side; the two coupling blind holes are respectively located on the first side and the second side of the dielectric body. side.
  • tuning blind holes are the first tuning blind hole 4 and the second tuning blind hole 5 respectively, and the double coupling blind holes 7 and 9 are respectively located on the first side and the second side of the dielectric body. This arrangement can produce a pair of zero point to improve out-of-band rejection.
  • the coupling blind hole is located on the same side of the dielectric body where the coupling blind hole is opened, and the other coupling blind hole is located on the opposite side to the side where the coupling blind hole is opened in the dielectric body, that is, the two coupling blind holes may be set at the same time On one side, it is also possible that two blind coupling holes are arranged opposite to each other on both sides of the dielectric body.
  • both the tuning blind hole and the coupling blind hole are arranged in a circle, an ellipse, or a polygon
  • the coupling blind hole is both circular
  • the coupling blind hole can also be a circle and a rectangle
  • the coupling blind hole can also be both rectangular or elliptical, or polygonal
  • the coupling blind hole can also be an open slot shape.
  • the tuning blind hole can be both circular, and the tuning blind hole can also be one.
  • a circular, a rectangular, tuning blind hole can also be both rectangular or oval, or polygonal, root.
  • the surface of the dielectric body, the tuning blind hole surface and the coupling blind hole surface provided on the dielectric body are covered with a conductive layer, and the material of the conductive layer is silver or copper and other metal materials.
  • the present invention discloses a dielectric waveguide filter, including a capacitive coupling structure, and a plurality of resonance units, each resonance unit may include a tuning blind hole, 7-9 blind holes are coupling blind holes , which is the blind hole coupling on the capacitive coupling structure, 1-6 are tuning blind holes, 4-5 are the tuning blind holes on the capacitive coupling structure, 8 is the inductive coupling blind hole, and 10-11 are the input and output Blind hole.
  • FIGS. 7-8 are performance diagrams of the structure of the dielectric waveguide filter of the present invention.

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Abstract

本发明提供了一种容性耦合结构及介质波导滤波器，包括介质本体，所述介质本体上设有两个同侧设置且分别开设有调谐盲孔的谐振部，其特征在于，所述介质本体上还设有位于两个调谐盲孔连线的对侧且交错设置的两个耦合盲孔，其中，所述耦合盲孔的深度大于介质本体厚度的一半，介质波导滤波器包括容性耦合结构。本发明的双耦合盲孔正反面相对设置可以产生一对零点，改善带外抑制性能，同时双耦合盲孔的每个盲孔深度比传统的单耦合盲孔更浅，盲孔底部与介质本体表面的厚度更厚，有利于提高生产过程中介质本体压制和烧结等阶段的产品良率，而且双耦合盲孔减轻了滤波器的重量，有利于轻量化。

Description

容性耦合结构及介质波导滤波器 技术领域
本发明涉及滤波器技术领域，尤其涉及一种容性耦合结构及介质波导滤波器。
 背景技术
在5G时代，受限于Massive MIMO（大规模天线技术）对大规模天线集成化的要求，滤波器需要更加小型化、集成化和轻量化。在限定尺寸的情况下，由于自身材料损耗的原因，传统的金属腔体滤波器和介质谐振腔体滤波器无法取得很高的Q值，导致各项性能指标都受到了限制。而陶瓷介质波导滤波器由于电磁波谐振发生在介质材料内部，且其本身材料介电常数一般在20～50，因此体积会更小。同时陶瓷介质波导滤波器具有Q值高、选频特性好、工作频率稳定性好、插入损耗小等优点。
现有的介质滤波器基本都通过增加传输零点来实现良好的选频特性，而传输零点的产生一般需要有容性耦合结构。目前的方案一般都是通过深度超过介质本体厚度1/2的深盲孔或上下对称的双盲孔来实现容性耦合，而上述方案的缺点是，为了获得合适的耦合带宽，盲孔深度过深，导致盲孔底部与介质本体表面的厚度很薄，大大影响了生产过程中介质本体压制和烧结等阶段的生产效率和良率，从而带来了材料浪费和降低生产效率等影响。
 技术问题
本发明的目的在于提供一种与传统盲孔相比较盲孔深度不深且提高了生产率和良率的介质波导滤波器的容性耦合结构及介质滤波器。
 技术解决方案
本发明的技术方案如下：
本实施例提供的一种介质波导滤波器的容性耦合结构，包括介质本体，所述介质本体上设有两个同侧设置且分别开设有调谐盲孔的谐振部，其特征在于，所述介质本体上还设有位于两个调谐盲孔连线的对侧且交错设置的两个耦合盲孔，其中，所述耦合盲孔的深度大于介质本体厚度的一半。
优选地，所述介质本体具有设有两个调谐盲孔的第一侧，以及与第一侧相对设置的第二侧。
两个所述耦合盲孔分别位于介质本体的第一侧及第二侧。
优选地，所述耦合盲孔位于介质本体开设有耦合盲孔的同一侧，另一所述耦合盲孔位于与介质本体开设有耦合盲孔一侧的对侧。
优选地，所述调谐盲孔及所述耦合盲孔均呈圆形、椭圆形、或多边形设置。
优选地，所述介质本体表面、调谐盲孔表面及耦合盲孔表面均覆有导电层。
优选地，所述导电层的材质为银或铜。
提供一种介质波导滤波器，包括上述的容性耦合结构。
 有益效果
本发明的双耦合盲孔两侧或同一侧相对设置可以产生一对零点，改善带外抑制性能，同时双耦合盲孔的每个盲孔深度比传统的单耦合盲孔更浅，盲孔底部与介质本体表面的厚度更厚，有利于提高生产过程中介质本体压制和烧结等阶段的产品良率，而且双耦合盲孔减轻了滤波器的重量，有利于轻量化。
 附图说明
图1为本发明实施例中容性耦合结构的正视图；
图2为本发明实施例中容性耦合结构的后视图；
图3为本发明实施例中容性耦合结构的沿图2中A-A方向的剖视图；
图4为本发明实施例中容性耦合结构的立体图；
图5为本发明实施例中介质波导滤波器结构的立体图；
图6为本发明实施例中介质波导滤波器结构的另一立体图；
图7为本发明实施例中介质波导滤波器结构的另一角度立体图；
图8为本发明实施例中容性耦合结构性能图；
图9为本发明实施例中介质波导滤波器结构的整体性能图。
 本发明的实施方式
下面结合附图和实施方式对本发明作进一步说明。
请参阅图1-4，本发明公开了一种的容性耦合结构，包括介质本体，介质本体上设有两个同侧设置且分别开设有调谐盲孔的谐振部，介质本体上还设有位于两个调谐盲孔连线的对侧且交错设置的两个耦合盲孔，其中，耦合盲孔的深度大于介质本体厚度的一半。其中，两个耦合盲孔分别为第一耦合盲孔7及第二耦合盲孔9。两个耦合盲孔7与9相对设置且所述两个耦合盲孔7与9分别位于介质本体的正面或背面，两个耦合盲孔7与9为浅盲孔，两个耦合盲孔交错布置，其投影无重叠区域。
相较于现有技术，本发明的双耦合盲孔7及9的交错设置可以产生一对零点，改善带外抑制性能，同时双耦合盲孔的每个盲孔深度比传统的单耦合盲孔更浅，盲孔底部与介质本体表面的厚度更厚，结构强度更强，粉体干压时密度更易控制，烧结时不容易变形，有利于提高生产过程中介质本体压制和烧结等阶段的产品良率，同时由于挖去了更多介质，双耦合盲孔减轻了滤波器的重量，有利于轻量化。
本发明中所述介质本体具有设有两个调谐盲孔的第一侧，以及与第一侧相对设置的第二侧；两个所述耦合盲孔分别位于介质本体的第一侧及第二侧。对应设置的调谐盲孔分别为第一调谐盲孔4与第二调谐盲孔5，而其中双耦合盲孔7及9分别位于介质本体的第一侧及第二侧，这样设置可以产生一对零点，改善带外抑制性能。
在本实施例中，耦合盲孔位于介质本体开设有耦合盲孔的同一侧，另一耦合盲孔位于与介质本体开设有耦合盲孔一侧的对侧，即两个耦合盲孔可能同时设置在一侧，也有可能两个耦合盲孔相对设置在介质本体的两侧。
在本实施例中，调谐盲孔及所述耦合盲孔均呈圆形、椭圆形、或多边形设置，耦合盲孔为两个都是圆形，耦合盲孔也可以为一个圆形，一个矩形，耦合盲孔还可以为两个都是矩形或椭圆形、或多边形，耦合盲孔还可以为开口槽形，同理，调谐盲孔为两个都是圆形，调谐盲孔也可以为一个圆形，一个矩形，调谐盲孔还可以为两个都是矩形或椭圆形、或多边形，根。
本发明中介质本体表面及介质本体上设有的调谐盲孔表面和耦合盲孔表面均覆有导电层，导电层的材质为银或铜等其他金属材料。
请参阅图5-6，本发明公开了一种介质波导滤波器，包括容性耦合结构，及多个谐振单元，每一谐振单元可以包括一个调谐盲孔，7-9盲孔为耦合盲孔，即为容性耦合结构上的盲孔耦合，1-6为调谐盲孔，其中4-5即为容性耦合结构上的调谐盲孔，8为感性耦合盲孔，10-11为输入输出盲孔。
请参阅图7-8，为本发明介质波导滤波器结构的性能图。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (7)

  1. 一种容性耦合结构，包括介质本体，其特征在于，所述介质本体上设有两个同侧设置且分别开设有调谐盲孔的谐振部，所述介质本体上还设有位于两个调谐盲孔连线的对侧且交错设置的两个耦合盲孔，其中，所述耦合盲孔的深度大于介质本体厚度的一半。
  2. 根据权利要求1所述的容性耦合结构，其特征在于，所述介质本体具有设有两个调谐盲孔的第一侧，以及与第一侧相对设置的第二侧；
    两个所述耦合盲孔分别位于介质本体的第一侧及第二侧。
  3. 根据权利要求1所述的容性耦合结构，其特征在于，一所述耦合盲孔位于介质本体开设有耦合盲孔的同一侧，另一所述耦合盲孔位于与介质本体开设有耦合盲孔一侧的对侧。
  4. 根据权利要求1至3任一项所述的容性耦合结构，其特征在于，所述调谐盲孔及所述耦合盲孔均呈圆形、椭圆形、或多边形设置。
  5. 根据权利要求4所述的容性耦合结构，其特征在于，所述介质本体表面、调谐盲孔表面及耦合盲孔表面均覆有导电层。
  6. 根据权利要求5所述的容性耦合结构，其特征在于，所述导电层的材质为银或铜。
  7. 一种介质波导滤波器，其特征在于，包括权利要求1至6任一项所述的容性耦合结构。
PCT/CN2020/103448 2020-06-30 2020-07-22 容性耦合结构及介质波导滤波器 Ceased WO2022000620A1 (zh)

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CN110148818A (zh) * 2019-06-13 2019-08-20 无锡惠虹电子有限公司 一种5g通信多层介质波导滤波器
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