WO2021008005A1 - 一种介质波导滤波器 - Google Patents

一种介质波导滤波器 Download PDF

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Publication number
WO2021008005A1
WO2021008005A1 PCT/CN2019/115067 CN2019115067W WO2021008005A1 WO 2021008005 A1 WO2021008005 A1 WO 2021008005A1 CN 2019115067 W CN2019115067 W CN 2019115067W WO 2021008005 A1 WO2021008005 A1 WO 2021008005A1
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WO
WIPO (PCT)
Prior art keywords
coupling hole
resonators
conductive shielding
shielding layer
waveguide filter
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PCT/CN2019/115067
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English (en)
French (fr)
Inventor
吴建汪
章博
段宗金
Original Assignee
深圳国人科技股份有限公司
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Publication of WO2021008005A1 publication Critical patent/WO2021008005A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2002—Dielectric waveguide filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/10—Dielectric resonators

Definitions

  • the present invention relates to a communication device component, in particular to a dielectric waveguide filter.
  • the filter is a frequency selection device and a key component in the communication system. It can pass the specific frequency needed in the signal while greatly attenuating other unwanted frequencies.
  • filters are required to be miniaturized and lightweight. Compared with the traditional metal waveguide filter, the dielectric waveguide filter based on the high dielectric constant ceramic material has the advantages of compact size and higher Q value, and is a good miniaturization solution.
  • dielectric waveguide filters In order to achieve high suppression, dielectric waveguide filters usually need to be cross-coupled to achieve transmission zero points, thereby achieving improved out-of-band suppression.
  • cross-coupling includes capacitive cross-coupling and inductive cross-coupling. Capacitive cross-coupling is used to realize the low-end transmission zero of the passband, thereby improving low-end suppression, and inductive cross-coupling is used to realize the high-end transmission zero of the passband, thereby improving High-end suppression.
  • Dielectric waveguide filters are more difficult than metal waveguide filters to achieve the transmission zero at the low end of the passband.
  • the capacitive cross-coupling in the industry is generally achieved by cascading metal probes outside the medium or adding a zero cavity structure in the port cavity. These methods make the overall structure of the filter more complicated or increase the volume of the filter. Conducive to product production and miniaturization.
  • the purpose of the present invention is to overcome the shortcomings of the above-mentioned technology and provide a dielectric waveguide filter, which can realize capacitive cross coupling, is easy to produce, and has a small size.
  • the negative coupling hole is a through hole
  • the through hole includes a main coupling hole arranged between the top surfaces of the two resonators and a secondary coupling hole arranged between the bottom surfaces of the two resonators.
  • the main coupling hole and the auxiliary coupling hole communicate with each other, and the inner diameter of the main coupling hole is larger than the inner diameter of the auxiliary coupling hole.
  • the at least one negative coupling hole is arranged between the two resonators, an isolation area is formed between the conductive shielding layers on the bottom surface of the two resonators, and the isolation area surrounds the auxiliary
  • the coupling hole is arranged to isolate the conductive shielding layer on the bottom surface of the two resonators and the conductive shielding layer on the inner wall of the auxiliary coupling hole.
  • the negative coupling hole is a through hole
  • the through hole includes an upper main coupling hole disposed between the top surfaces of the two resonators, a lower main coupling hole disposed between the bottom surfaces of the two resonators, and
  • the auxiliary coupling hole is located between the upper main coupling hole and the lower main coupling hole, the auxiliary coupling hole communicates with the upper main coupling hole and the lower main coupling hole respectively; the inner diameter of the upper main coupling hole and the lower main coupling hole The inner diameter of is greater than the inner diameter of the secondary coupling hole.
  • each resonator the inner wall and bottom surface of the upper main coupling hole, the inner wall of the auxiliary coupling hole, and the inner wall and bottom surface of the lower main coupling hole are all provided with a conductive shielding layer.
  • the at least one negative coupling hole is arranged between the two resonators, an isolation region is formed between the conductive shielding layers on the bottom surface of the two resonators, and the isolation region surrounds the lower part.
  • the main coupling hole is arranged to isolate the conductive shielding layer on the bottom surface of the two resonators and the conductive shielding layer on the inner wall of the lower main coupling hole.
  • the dielectric body includes two resonators, three resonators or four resonators.
  • FIG. 4 is a schematic cross-sectional view of the dielectric waveguide filter shown in FIG. 3;
  • FIG. 5 is a schematic structural diagram of a dielectric waveguide filter provided by the third embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of a dielectric waveguide filter according to a fourth embodiment of the present invention.
  • FIG. 8 is a schematic cross-sectional view of the dielectric waveguide filter shown in FIG. 7;
  • FIG. 10 is a schematic cross-sectional view of the dielectric waveguide filter shown in FIG. 9;
  • FIG. 11 is a schematic top view of a dielectric waveguide filter according to a sixth embodiment of the present invention.
  • FIG. 12 is a schematic top view of a dielectric waveguide filter according to a seventh embodiment of the present invention.
  • a dielectric waveguide filter provided by the present invention includes a dielectric body 10, the dielectric body 10 includes multiple resonators, and the multiple resonators are connected to each other.
  • the material of the dielectric body 10 is a solid dielectric material such as ceramics.
  • the dielectric body 10 further includes at least one negative coupling hole 30, which is disposed between two of the resonators connected to each other, so that a negative coupling can be generated between the two resonators, thereby realizing
  • the capacitive cross-coupling of the dielectric waveguide filter enables the dielectric waveguide filter to form at least one transmission zero at the low end of the passband, thereby achieving the purpose of improving low-end suppression.
  • the dielectric body 10 includes two resonators 11 and 12.
  • the structures and sizes of the two resonators 11 and 12 are the same. It is understandable that the structures and sizes of the two resonators 11 and 12 can also be different.
  • the two resonators 11 and 12 are connected to each other to form a rectangular structure, a square structure and other structures.
  • a negative coupling hole 30 is provided between the two resonators 11 and 12. Understandably, two or more negative coupling holes 30 may also be provided between the two resonators 11 and 12. By setting a negative coupling hole 30, a negative coupling can be generated between the two resonators 11, 12, so that the dielectric waveguide filter can form a transmission zero at the low end of the passband, and can also achieve two Low-end transmission zero. Understandably, the number of negative coupling holes 30 can also be set according to the number and frequency of the low-end transmission zeros actually required. By providing the negative coupling hole 30 between the two resonators 11 and 12, compared with the prior art, the manufacturing process is simplified, the production is easy, and the volume of the dielectric waveguide filter is not increased.
  • the negative coupling hole 30 is a through hole that penetrates the dielectric body 10 along the height direction of the dielectric body 10.
  • the through hole includes a main coupling hole 31 arranged between the top surfaces of the two resonators 11, 12 and The secondary coupling hole 32 between the bottom surfaces of the resonators 11 and 12, the main coupling hole 31 and the secondary coupling hole 32 are communicated with each other, and the inner diameter of the main coupling hole 31 is larger than the inner diameter of the secondary coupling hole 32.
  • the depth of the main coupling hole 31 is greater than the depth of the auxiliary coupling hole 32 and greater than 50% of the height of the resonator.
  • a conductive shielding layer 41 is provided on the outer surface (including the top surface, the bottom surface and the side surface) of each resonator.
  • the inner wall and bottom surface of the main coupling hole 31 are provided with conductive shielding layers 44a and 44b.
  • the inner wall of the auxiliary coupling hole 32 is provided with a conductive shielding layer 45.
  • the inner wall and bottom surface of the blind tuning hole 111 are also provided with conductive shielding layers 42a and 42b. All conductive shielding layers have the same structure and are integrally formed, which is easy to manufacture.
  • the conductive shielding layer can be arranged on the corresponding surface by coating, electroplating and other processes.
  • the conductive shielding layer is, for example, a silver layer, a copper layer, and so on.
  • the conductive shielding layer 44b on the bottom surface of the main coupling hole 31 is formed with an isolation region 50.
  • the isolation region 50 is arranged around the auxiliary coupling hole 32 to isolate the conductive shield layer 44b on the bottom surface of the main coupling hole 31 from the inner wall of the auxiliary coupling hole 32.
  • the conductive shielding layer 45 is formed with an isolation region 50.
  • the isolation area 50 is usually formed by first providing a conductive shielding layer 44b on the bottom surface of the main coupling hole 31, and then removing a part of the conductive shielding layer 44b around the auxiliary coupling hole 32 by laser or polishing, so as to form the isolation area 50 .
  • the cross-sectional shape of the isolation area 50 is circular. It is understandable that the cross-sectional shape of the isolation area 50 may also be a square, an ellipse, etc., and the cross-sectional shape of the isolation area 50 can be set according to actual conditions.
  • the magnitude of the negative coupling between the two resonators 11 and 12 can be changed.
  • the depth of the main coupling hole 31 and the area of the isolation region 50 the purpose of adjusting the strength of capacitive cross coupling can be achieved.
  • this embodiment is different from the first embodiment in that an isolation region 50 is formed between the conductive shielding layers 41 on the bottom surfaces of the two resonators 11 and 12, and the isolation region 50 is arranged around the auxiliary coupling hole 32.
  • the conductive shielding layer 41 used to isolate the bottom surfaces of the two resonators 11 and 12 and the conductive shielding layer 45 on the inner wall of the auxiliary coupling hole 32.
  • the formation of the isolation region 50 is similar to that of the first embodiment.
  • a conductive shielding layer 41 is provided on the bottom surfaces of the two resonators 11 and 12, and then a part of the periphery of the auxiliary coupling hole 32 is shielded by laser or polishing. The layer 41 is removed, thereby forming an isolation region 50.
  • the size of the negative coupling between the two resonators 11 and 12 can also be changed.
  • the depth of the main coupling hole 31 and the area of the isolation region 50 the strength of capacitive cross coupling can also be adjusted.
  • the negative coupling hole 30 includes an upper main coupling hole 31 arranged between the top surfaces of the two resonators 11, 12, and The lower main coupling hole 32 between the bottom surfaces of the resonators 11 and 12 and the auxiliary coupling hole 33 between the upper main coupling hole 31 and the lower main coupling hole 32.
  • the auxiliary coupling hole 33 communicates with the upper main coupling hole 31 and the lower main coupling hole 32 respectively.
  • the inner diameter of the upper main coupling hole 31 and the inner diameter of the lower main coupling hole 32 are larger than the inner diameter of the auxiliary coupling hole 33.
  • the inner diameter of the upper main coupling hole 31 is equal to the inner diameter of the lower main coupling hole 32.
  • the inner diameter of the upper main coupling hole 31 and the inner diameter of the lower main coupling hole 32 may not be equal.
  • the depth of the upper main coupling hole 31 is greater than the depth of the lower main coupling hole 32 and the depth of the auxiliary coupling hole 33, and is greater than 50% of the height of the resonator.
  • the depth of the lower main coupling hole 32 is equal to the depth of the auxiliary coupling hole 33.
  • the depth of the lower main coupling hole 32 may not be equal to the depth of the auxiliary coupling hole 33.
  • the cross-sectional shapes of the upper main coupling hole 31, the auxiliary coupling hole 33, and the lower main coupling hole 32 are circular, elliptical, square, or the like. Setting the negative coupling hole 30 in the form of a through hole including the upper main coupling hole 31, the auxiliary coupling hole 33, and the lower main coupling hole 32 facilitates the metallization of its inner surface even if it covers the conductive shielding layer. .
  • a conductive shield layer 41 is provided on the outer surface of each resonator.
  • the inner wall and bottom surface of the upper main coupling hole 31 are provided with conductive shielding layers 44a and 44b.
  • the inner wall of the auxiliary coupling hole 33 is provided with a conductive shielding layer 46.
  • the inner wall and bottom surface of the lower main coupling hole 32 are provided with conductive shielding layers 45a and 45b. All conductive shielding layers have the same structure and are integrally formed, which is easy to manufacture.
  • the formation of the isolation region 50 is similar to that of the first embodiment. Generally, a conductive shielding layer 44b is first provided on the bottom surface of the upper main coupling hole 31, and then a part of the conductive shielding layer 44b located around the auxiliary coupling hole 33 is removed by laser or polishing. Removed, thereby forming an isolation region 50.
  • the size of the negative coupling between the two resonators 11 and 12 can also be changed.
  • the depth of the upper main coupling hole 31 and the area of the isolation region 50 the strength of capacitive cross coupling can also be adjusted.
  • the difference between this embodiment and the third embodiment is that the conductive shielding layer 45b on the bottom of the lower main coupling hole 32 is formed with an isolation region 50, and the isolation region 50 is arranged around the auxiliary coupling hole 33 for isolation The conductive shielding layer 45b on the bottom surface of the main coupling hole 32 and the conductive shielding layer 46 on the inner wall of the auxiliary coupling hole 33.
  • the formation of the isolation region 50 is similar to that of the third embodiment. Usually, a conductive shielding layer 45b is first provided on the bottom surface of the lower main coupling hole 32, and a part of the conductive shielding layer 45b located around the auxiliary coupling hole 33 is removed by laser or polishing. Thus, an isolation region 50 is formed.
  • the size of the negative coupling between the two resonators 11 and 12 can also be changed.
  • the depth of the upper main coupling hole 31 and the area of the isolation region 50 the strength of capacitive cross coupling can also be adjusted.
  • the difference between this embodiment and the third embodiment is that an isolation region 50 is formed between the conductive shielding layers 41 on the bottom surfaces of the two resonators 11 and 12, and the isolation region 50 surrounds the lower main coupling hole 32. It is provided to isolate the conductive shielding layer 41 on the bottom surface of the two resonators 11 and 12 from the conductive shielding layer 45a on the inner wall of the lower main coupling hole 32.
  • the formation of the isolation region 50 is similar to that of the third embodiment.
  • a conductive shielding layer 41 is provided on the bottom surfaces of the two resonators 11 and 12, and then a part of the periphery of the lower main coupling hole 32 is electrically conductive by laser or polishing. The shielding layer 41 is removed, thereby forming an isolation region 50.
  • the size of the negative coupling between the two resonators 11 and 12 can also be changed.
  • the depth of the upper main coupling hole 31 and the area of the isolation region 50 the strength of capacitive cross coupling can also be adjusted.
  • the difference between this embodiment and the first embodiment is that the dielectric body 10 of this embodiment includes three resonators 11, 12, and 13, and the three resonators 11, 12, and 13 are connected to each other to form a T ⁇ Shape structure.
  • the structures and sizes of the resonators 11 and 13 are the same.
  • One negative coupling hole 30 is provided between the resonators 11 and 13. It is understandable that two or more negative coupling holes 30 can be provided between the resonators 11 and 13.
  • negative coupling can be generated between the two resonators 11, 13, so that the dielectric waveguide filter can form a transmission zero at the low end of the passband, and the manufacturing process is simplified, and it is easy to Production, and will not increase the volume of the dielectric waveguide filter.
  • the electromagnetic wave energy is coupled between the resonator 11 and the resonator 12 through the window 71, and the electromagnetic wave energy is coupled between the resonator 12 and the resonator 13 through the window 72.
  • the window 71 and the window 72 communicate with each other.
  • the difference between this embodiment and the first embodiment is that the dielectric body 10 of this embodiment includes four resonators 11, 12, 13, 14, and the four resonators 11, 12, 13, 14 are mutually The connection forms a square structure.
  • the four resonators 11, 12, 13, 14 have the same structure and size.
  • One negative coupling hole 30 is provided between the resonators 11 and 14. It is understood that two or more negative coupling holes 30 can be provided between the resonators 11 and 14. By providing a negative coupling hole 30, a negative coupling can be generated between the two resonators 11, 14, so that the dielectric waveguide filter can form a transmission zero at the low end of the passband, and the manufacturing process is simplified and easy Production, and will not increase the volume of the dielectric waveguide filter.
  • Energy is coupled between resonator 11 and resonator 12, between resonator 12 and resonator 13, and between resonator 13 and resonator 14 through windows 73, 74, and 75, respectively, and windows 73, 74, and 75 are connected to each other .
  • the dielectric body 10 may also include five, six or other number of resonators, which can be set according to actual conditions.

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Abstract

本发明涉及一种介质波导滤波器，包括介质本体，所述介质本体包括多个谐振器，所述多个谐振器之间相互连接，所述介质本体还包括至少一个负耦合孔，所述至少一个负耦合孔设置在其中两个相互连接的谐振器之间，从而可在该两个谐振器之间产生负的耦合，从而可实现介质波导滤波器的容性交叉耦合，使得介质波导滤波器在通带低端可形成至少一个传输零点。本发明通过在其中两个相互连接的谐振器之间设置负耦合孔，从而使得介质波导滤波器在通带低端可形成至少一个传输零点，并且采用设置负耦合孔的方式，简化了制造工艺，易于生产，同时可保证介质波导滤波器的小型化。

Description

一种介质波导滤波器 技术领域
本发明涉及一种通信设备组件，尤其是涉及一种介质波导滤波器。
 背景技术
滤波器是一种选频装置，是通信系统里的关键部件，可以使信号中需要的特定频率通过，而极大地衰减其它不需要的频率。随着通信系统的发展，要求滤波器小型化、轻量化。相较于传统的金属波导滤波器，基于高介电常数陶瓷材料的介质波导滤波器具有紧凑体积以及较高Q值的优点，是一种很好的小型化解决方案。
通信系统对带外抑制要求越来越高，为了实现高抑制，介质波导滤波器通常需要加交叉耦合来实现传输零点，从而实现提高带外抑制。其中，交叉耦合包括容性交叉耦合及感性交叉耦合，容性交叉耦合用于实现通带的低端传输零点，从而改善低端抑制，感性交叉耦合用于实现通带的高端传输零点，从而改善高端抑制。介质波导滤波器，在实现通带的低端传输零点时，相较于金属波导滤波器更加困难。目前业内要实现容性交叉耦合一般通过在介质外级联跨接金属探针或在端口腔增加零腔结构来实现，这些方式使得滤波器的整体结构更加复杂或者增加了滤波器的体积，不利于产品生产和小型化。
 技术问题
本发明的目的在于克服上述技术的不足，提供一种介质波导滤波器，可实现容性交叉耦合，且易于生产，体积小。
 技术解决方案
本发明提供的一种介质波导滤波器，包括介质本体，所述介质本体包括多个谐振器，所述多个谐振器之间相互连接，所述介质本体还包括至少一个负耦合孔，所述至少一个负耦合孔设置在其中两个相互连接的谐振器之间，从而可在该两个谐振器之间产生负的耦合，从而可实现介质波导滤波器的容性交叉耦合，使得介质波导滤波器在通带低端可形成至少一个传输零点。
进一步地，所述负耦合孔为一通孔，所述通孔包括设置在该两个谐振器顶面之间的主耦合孔以及设置在该两个谐振器底面之间的副耦合孔，所述主耦合孔和副耦合孔之间相互连通，且主耦合孔的内径大于副耦合孔的内径。
进一步地，每个谐振器的外表面、主耦合孔的内壁及底面、副耦合孔的内壁均设有导电屏蔽层。
进一步地，所述主耦合孔底面的导电屏蔽层形成有隔离区域，所述隔离区域围绕所述副耦合孔设置，用于隔离主耦合孔底面的导电屏蔽层与副耦合孔内壁的导电屏蔽层。
进一步地，将所述至少一个负耦合孔设置在其两者之间的两个谐振器，该两个谐振器的底面的导电屏蔽层之间形成有隔离区域，所述隔离区域围绕所述副耦合孔设置，用于隔离该两个谐振器底面的导电屏蔽层与副耦合孔内壁的导电屏蔽层。
进一步地，所述负耦合孔为一通孔，所述通孔包括设置在该两个谐振器顶面之间的上主耦合孔、设置在该两个谐振器底面之间的下主耦合孔以及位于上主耦合孔、下主耦合孔之间的副耦合孔，所述副耦合孔分别与所述上主耦合孔、下主耦合孔连通；所述上主耦合孔的内径、下主耦合孔的内径大于所述副耦合孔的内径。
进一步地，每个谐振器的外表面、上主耦合孔的内壁及底面、副耦合孔的内壁、下主耦合孔的内壁及底面均设有导电屏蔽层。
进一步地，所述上主耦合孔底面的导电屏蔽层形成有隔离区域，所述隔离区域围绕所述副耦合孔设置，用于隔离上主耦合孔底面的导电屏蔽层与副耦合孔内壁的导电屏蔽层；或者所述下主耦合孔底面的导电屏蔽层设有隔离区域，所述隔离区域围绕所述副耦合孔设置，用于隔离下主耦合孔底面的导电屏蔽层与副耦合孔内壁的导电屏蔽层。
进一步地，将所述至少一个负耦合孔设置在其两者之间的两个谐振器，该两个谐振器的底面的导电屏蔽层之间形成有隔离区域，所述隔离区域围绕所述下主耦合孔设置，用于隔离该两个谐振器底面的导电屏蔽层与下主耦合孔内壁的导电屏蔽层。
进一步地，所述介质本体包括两个谐振器、三个谐振器或四个谐振器。
 有益效果
本发明通过在其中两个相互连接的谐振器之间设置负耦合孔，从而可在该两个谐振器之间产生负的耦合，从而可实现介质波导滤波器的容性交叉耦合，使得介质波导滤波器在通带低端可形成至少一个传输零点，并且采用设置负耦合孔的方式，相对现有技术，简化了制造工艺，易于生产，同时不会增大介质波导滤波器的体积，可保证介质波导滤波器的小型化。
 附图说明
图1为本发明第一实施例提供的一种介质波导滤波器的结构示意图；
图2是图1所示介质波导滤波器的剖视示意图；
图3为本发明第二实施例提供的一种介质波导滤波器的结构示意图；
图4是图3所示介质波导滤波器的剖视示意图；
图5为本发明第三实施例提供的一种介质波导滤波器的结构示意图；
图6是图5所示介质波导滤波器的剖视示意图；
图7为本发明第四实施例提供的一种介质波导滤波器的结构示意图；
图8是图7所示介质波导滤波器的剖视示意图；
图9为本发明第五实施例提供的一种介质波导滤波器的结构示意图；
图10是图9所示介质波导滤波器的剖视示意图；
图11为本发明第六实施例提供的一种介质波导滤波器的俯视示意图；
图12为本发明第七实施例提供的一种介质波导滤波器的俯视示意图。
 本发明的实施方式
下面结合附图和实施例对本发明作进一步的描述。
第一实施例
参考图1和图2，本发明提供的一种介质波导滤波器，包括介质本体10，介质本体10包括多个谐振器，多个谐振器之间相互连接。介质本体10的材质为固态介电材料例如陶瓷等。介质本体10还包括至少一个负耦合孔30，该至少一个负耦合孔30设置在其中两个相互连接的谐振器之间，从而可在该两个谐振器之间产生负的耦合，从而可实现介质波导滤波器的容性交叉耦合，使得介质波导滤波器在通带低端可形成至少一个传输零点，从而达到改善低端抑制的目的。
本实施例中，介质本体10包括两个谐振器11、12。两个谐振器11、12的结构、大小均相同，可以理解地，两个谐振器11、12的结构、大小也可以不同。两个谐振器11、12之间相互连接形成一长方形结构、正方形结构等其他形状的结构。
每个谐振器设有至少一个调谐盲孔111，调谐盲孔111可用于实现介质波导滤波器的谐振频率的调节，通过调整调谐盲孔111的深度可实现谐振频率的调节。本实施例中，每个谐振器的顶面设有一个调谐盲孔111，调谐盲孔111的数量还可以是例如两个或两个以上，可根据实际情况设置调谐盲孔111的数量。可以理解地，调谐盲孔111还可以设置在对应的谐振器的底面。
两个谐振器11、12之间设有一个负耦合孔30。可以理解地，两个谐振器11、12之间也可设置两个或两个以上的负耦合孔30。通过设置的一个负耦合孔30，可在该两个谐振器11、12之间产生负的耦合，从而使得介质波导滤波器在通带低端可形成一个传输零点，特殊位置也可实现两个低端传输零点。可以理解地，也可根据实际需要的低端传输零点的个数以及频率来设置负耦合孔30的数量。通过在两个谐振器11、12之间设置负耦合孔30的方式，相对现有技术，简化了制造工艺，易于生产，并且不会增大介质波导滤波器的体积。
负耦合孔30为一通孔，通孔沿介质本体10的高度方向贯穿介质本体10，通孔包括设置在该两个谐振器11、12顶面之间的主耦合孔31以及设置在该两个谐振器11、12底面之间的副耦合孔32，主耦合孔31和副耦合孔32之间相互连通，且主耦合孔31的内径大于副耦合孔32的内径。主耦合孔31的深度大于副耦合孔32的深度，且大于50%的谐振器的高度。主耦合孔31和副耦合孔32的截面形状可以是圆形、椭圆形或方形等等。将负耦合孔30设置为包括主耦合孔31和副耦合孔32的通孔形式，便于其内表面的金属化处理，即便于覆盖导电屏蔽层。
每个谐振器的外表面（包括顶面、底面及侧面）设有导电屏蔽层41。主耦合孔31的内壁及底面设有导电屏蔽层44a、44b。副耦合孔32的内壁设有导电屏蔽层45。调谐盲孔111的内壁及底面也设有导电屏蔽层42a、42b。所有的导电屏蔽层的结构相同且是一体成型的，便于制造。导电屏蔽层可通过涂覆、电镀等工艺设置在对应的面上。导电屏蔽层例如为银层、铜层等等。
本实施例中，主耦合孔31底面的导电屏蔽层44b形成有隔离区域50，隔离区域50围绕副耦合孔32设置，用于隔离主耦合孔31底面的导电屏蔽层44b与副耦合孔32内壁的导电屏蔽层45。
隔离区域50的形成，通常是先在主耦合孔31的底面设置导电屏蔽层44b，然后通过激光或打磨等工艺方式将位于副耦合孔32周边的一部分导电屏蔽层44b去掉，从而形成隔离区域50。
隔离区域50的截面形状为圆形，可以理解地，隔离区域50的截面形状还可以是例如方形、椭圆形等形状，可根据实际情况设置隔离区域50的截面形状。
通过调整隔离区域50的面积的大小，可以改变两个谐振器11、12之间的负的耦合量的大小。通过调整主耦合孔31的深度以及隔离区域50的面积，可达到调整容性交叉耦合强弱的目的。
第二实施例
参考图3和图4，本实施例与第一实施例不同的是，两个谐振器11、12底面的导电屏蔽层41之间形成有隔离区域50，隔离区域50围绕副耦合孔32设置，用于隔离该两个谐振器11、12底面的导电屏蔽层41与副耦合孔32内壁的导电屏蔽层45。隔离区域50的形成与第一实施例类似，通常是先在两个谐振器11、12的底面设置导电屏蔽层41，然后通过激光或打磨等工艺方式将位于副耦合孔32周边的一部分导电屏蔽层41去掉，从而形成隔离区域50。
通过调整隔离区域50的面积的大小，同样可实现改变两个谐振器11、12之间的负的耦合量的大小。通过调整主耦合孔31的深度以及隔离区域50的面积，同样可实现调整容性交叉耦合的强弱。
第三实施例
参考图5和图6，本实施例与第一实施例不同的是，负耦合孔30包括设置在该两个谐振器11、12顶面之间的上主耦合孔31、设置在该两个谐振器11、12底面之间的下主耦合孔32以及位于上主耦合孔31、下主耦合孔32之间的副耦合孔33。副耦合孔33分别与上主耦合孔31、下主耦合孔32连通。上主耦合孔31的内径、下主耦合孔32的内径大于副耦合孔33的内径。上主耦合孔31的内径与下主耦合孔32的内径相等，当然，上主耦合孔31的内径可以与下主耦合孔32的内径不相等。
上主耦合孔31的深度大于下主耦合孔32的深度、副耦合孔33的深度，且大于50%的谐振器的高度。下主耦合孔32的深度与副耦合孔33的深度相等，当然，下主耦合孔32的深度可以与副耦合孔33的深度不相等。上主耦合孔31、副耦合孔33、下主耦合孔32的截面形状为圆形、椭圆形或方形等等。将负耦合孔30设置为包括上主耦合孔31、副耦合孔33、下主耦合孔32的通孔形式，便于其内表面的金属化处理，即便于覆盖导电屏蔽层。。
每个谐振器的外表面设有导电屏蔽层41。上主耦合孔31的内壁及底面设有导电屏蔽层44a、44b。副耦合孔33的内壁设有导电屏蔽层46。下主耦合孔32的内壁及底面设有导电屏蔽层45a、45b。所有的导电屏蔽层的结构相同且是一体成型的，便于制造。
本实施例中，上主耦合孔31底面的导电屏蔽层44b形成有隔离区域50，隔离区域50围绕副耦合孔33设置，用于隔离上主耦合孔31底面的导电屏蔽层44b与副耦合孔33内壁的导电屏蔽层46。
隔离区域50的形成与第一实施例类似，通常是先在上主耦合孔31的底面设置导电屏蔽层44b，然后通过激光或打磨等工艺方式将位于副耦合孔33周边的一部分导电屏蔽层44b去掉，从而形成隔离区域50。
通过调整隔离区域50的面积的大小，同样可实现改变两个谐振器11、12之间的负的耦合量的大小。通过调整上主耦合孔31的深度以及隔离区域50的面积，同样可实现调整容性交叉耦合的强弱。
第四实施例
参考图7和图8，本实施例与第三实施例不同的是，下主耦合孔32底面的导电屏蔽层45b形成有隔离区域50，隔离区域50围绕副耦合孔33设置，用于隔离下主耦合32孔底面的导电屏蔽层45b与副耦合孔33内壁的导电屏蔽层46。
隔离区域50的形成与第三实施例类似，通常是先在下主耦合孔32的底面设置导电屏蔽层45b，通过激光或打磨等工艺方式将位于副耦合孔33周边的一部分导电屏蔽层45b去掉，从而形成隔离区域50。
通过调整隔离区域50的面积的大小，同样可实现改变两个谐振器11、12之间的负的耦合量的大小。通过调整上主耦合孔31的深度以及隔离区域50的面积，同样可实现调整容性交叉耦合的强弱。
第五实施例
参考图9和图10，本实施例与第三实施例不同的是，两个谐振器11、12的底面的导电屏蔽层41之间形成有隔离区域50，隔离区域50围绕下主耦合孔32设置，用于隔离该两个谐振器11、12底面的导电屏蔽层41与下主耦合孔32内壁的导电屏蔽层45a。
隔离区域50的形成与第三实施例类似，通常是先在两个谐振器11、12的底面设置导电屏蔽层41，然后通过激光或打磨等工艺方式将位于下主耦合孔32周边的一部分导电屏蔽层41去掉，从而形成隔离区域50。
通过调整隔离区域50的面积的大小，同样可实现改变两个谐振器11、12之间的负的耦合量的大小。通过调整上主耦合孔31的深度以及隔离区域50的面积，同样可实现调整容性交叉耦合的强弱。
第六实施例
参考图11，本实施例与第一实施例不同的是，本实施例的介质本体10包括三个谐振器11、12、13，三个谐振器11、12、13之间相互连接形成一T形结构。谐振器11、13的结构、大小均相同。其中谐振器之间11、13设有一个负耦合孔30，可以理解地，谐振器11、13之间可以设置两个或两个以上的负耦合孔30。通过设置的一个负耦合孔30，可在该两个谐振器11、13之间产生负的耦合，从而使得介质波导滤波器在通带低端可形成一个传输零点，且简化了制造工艺，易于生产，且不会增大介质波导滤波器的体积。
谐振器11与谐振器12之间通过窗口71耦合电磁波能量，谐振器12和谐振器13之间通过窗口72耦合电磁波能量。窗口71与窗口72之间相互连通。
第七实施例
参考图12，本实施例与第一实施例不同的是，本实施例的介质本体10包括四个谐振器11、12、13、14，四个谐振器11、12、13、14之间相互连接形成一正方形结构。四个谐振器11、12、13、14的结构、大小相同。其中谐振器11、14之间设有一个负耦合孔30，可以理解地，谐振器11、14之间可以设置两个或两个以上的负耦合孔30。通过设置的一个负耦合孔30，可在该两个谐振器11、14之间产生负的耦合，从而使得介质波导滤波器在通带低端可形成一个传输零点，并且简化了制造工艺，易于生产，且不会增大介质波导滤波器的体积。
谐振器11与谐振器12之间、谐振器12与谐振器13之间、谐振器13与谐振器14之间分别通过窗口73、74、75耦合能量，窗口73、74、75之间相互连通。
在其他实施方式中，介质本体10还可以是包括五个、六个或其他数量的谐振器，可以根据实际情况进行设置。
以上实施例仅表达了本发明的优选实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，如对各个实施例中的不同特征进行组合等，这些都属于本发明的保护范围。

Claims (10)

  1. 一种介质波导滤波器，包括介质本体，所述介质本体包括多个谐振器，所述多个谐振器之间相互连接，其特征在于：所述介质本体还包括至少一个负耦合孔，所述至少一个负耦合孔设置在其中两个相互连接的谐振器之间，从而可在该两个谐振器之间产生负的耦合，从而可实现介质波导滤波器的容性交叉耦合，使得介质波导滤波器在通带低端可形成至少一个传输零点。
  2. 根据权利要求1所述的介质波导滤波器，其特征在于：所述负耦合孔为一通孔，所述通孔包括设置在该两个谐振器顶面之间的主耦合孔以及设置在该两个谐振器底面之间的副耦合孔，所述主耦合孔和副耦合孔之间相互连通，且主耦合孔的内径大于副耦合孔的内径。
  3. 根据权利要求2所述的介质波导滤波器，其特征在于：每个谐振器的外表面、主耦合孔的内壁及底面、副耦合孔的内壁均设有导电屏蔽层。
  4. 根据权利要求3所述的介质波导滤波器，其特征在于：所述主耦合孔底面的导电屏蔽层形成有隔离区域，所述隔离区域围绕所述副耦合孔设置，用于隔离主耦合孔底面的导电屏蔽层与副耦合孔内壁的导电屏蔽层。
  5. 根据权利要求3所述的介质波导滤波器，其特征在于：将所述至少一个负耦合孔设置在其两者之间的两个谐振器，该两个谐振器的底面的导电屏蔽层之间形成有隔离区域，所述隔离区域围绕所述副耦合孔设置，用于隔离该两个谐振器底面的导电屏蔽层与副耦合孔内壁的导电屏蔽层。
  6. 根据权利要求1所述的介质波导滤波器，其特征在于：所述负耦合孔为一通孔，所述通孔包括设置在该两个谐振器顶面之间的上主耦合孔、设置在该两个谐振器底面之间的下主耦合孔以及位于上主耦合孔、下主耦合孔之间的副耦合孔，所述副耦合孔分别与所述上主耦合孔、下主耦合孔连通；所述上主耦合孔的内径、下主耦合孔的内径大于所述副耦合孔的内径。
  7. 根据权利要求6所述的介质波导滤波器，其特征在于：每个谐振器的外表面、上主耦合孔的内壁及底面、副耦合孔的内壁、下主耦合孔的内壁及底面均设有导电屏蔽层。
  8. 根据权利要求7所述的介质波导滤波器，其特征在于：所述上主耦合孔底面的导电屏蔽层形成有隔离区域，所述隔离区域围绕所述副耦合孔设置，用于隔离上主耦合孔底面的导电屏蔽层与副耦合孔内壁的导电屏蔽层；或者所述下主耦合孔底面的导电屏蔽层设有隔离区域，所述隔离区域围绕所述副耦合孔设置，用于隔离下主耦合孔底面的导电屏蔽层与副耦合孔内壁的导电屏蔽层。
  9. 根据权利要求7所述的介质波导滤波器，其特征在于：将所述至少一个负耦合孔设置在其两者之间的两个谐振器，该两个谐振器的底面的导电屏蔽层之间形成有隔离区域，所述隔离区域围绕所述下主耦合孔设置，用于隔离该两个谐振器底面的导电屏蔽层与下主耦合孔内壁的导电屏蔽层。
  10. 根据权利要求1所述的介质波导滤波器，其特征在于：所述介质本体包括两个谐振器、三个谐振器或四个谐振器。
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