WO2021261403A1 - 積層体、硬化性樹脂組成物、積層体の製造方法、接合電極を有する基板の製造方法、半導体装置及び撮像装置 - Google Patents

積層体、硬化性樹脂組成物、積層体の製造方法、接合電極を有する基板の製造方法、半導体装置及び撮像装置 Download PDF

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Publication number
WO2021261403A1
WO2021261403A1 PCT/JP2021/023227 JP2021023227W WO2021261403A1 WO 2021261403 A1 WO2021261403 A1 WO 2021261403A1 JP 2021023227 W JP2021023227 W JP 2021023227W WO 2021261403 A1 WO2021261403 A1 WO 2021261403A1
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Prior art keywords
substrate
organic film
electrode
laminate
curable resin
Prior art date
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Ceased
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PCT/JP2021/023227
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English (en)
French (fr)
Japanese (ja)
Inventor
太郎 塩島
憲一朗 佐藤
英寛 出口
英亮 石澤
宗宏 畠井
徳重 七里
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Publication date
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Priority to US18/010,288 priority Critical patent/US20230245936A1/en
Priority to EP21829982.4A priority patent/EP4169971A4/en
Priority to CN202180020010.XA priority patent/CN115244670A/zh
Priority to JP2021552191A priority patent/JP7144624B2/ja
Priority to KR1020227026941A priority patent/KR20230028205A/ko
Publication of WO2021261403A1 publication Critical patent/WO2021261403A1/ja
Priority to JP2022140717A priority patent/JP7374270B2/ja
Anticipated expiration legal-status Critical
Priority to JP2023182417A priority patent/JP2024010081A/ja
Ceased legal-status Critical Current

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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/953—Materials of bond pads not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
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    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/011—Manufacture or treatment of pads or other interconnections to be direct bonded
    • H10W80/016—Cleaning
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    • H10W90/00—Package configurations
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
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    • H10W90/00—Package configurations
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    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/794—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present invention relates to a laminated body having high electrical connection reliability, a curable resin composition used for the laminated body, a method for manufacturing the laminated body, a method for manufacturing a substrate having a bonding electrode used for manufacturing the laminated body, and a method for manufacturing the substrate.
  • the present invention relates to a semiconductor device and an image pickup device having the laminated body.
  • the insulating film used for forming the bonded surface is required to have high heat resistance. Therefore, in the conventional laminated body, an insulating inorganic material such as SiN or SiO 2 is used as the insulator.
  • the insulating film made of an inorganic material tends to warp the substrate, and if the substrate warps, the connection position of the electrodes may shift or the electrodes may crack when the laminated body is formed. Connection reliability may be low. Further, in recent years, the performance of semiconductor devices has been improved, and the size and thickness of the substrate have been increasing, so that the warp of the substrate is more likely to occur.
  • the present invention relates to a laminated body having high electrical connection reliability, a curable resin composition used for the laminated body, a method for manufacturing the laminated body, a method for manufacturing a substrate having a bonding electrode used for manufacturing the laminated body, and a method for manufacturing the substrate. It is an object of the present invention to provide a semiconductor device and an image pickup device having the laminated body.
  • the present invention has a first substrate having electrodes, an organic film, and a second substrate having electrodes in this order, and the electrodes of the first substrate and the electrodes of the second substrate are , A laminate that is electrically connected via a through hole that penetrates the organic film.
  • the present invention will be described in detail.
  • the laminate of the present invention has a first substrate having an electrode, an organic film, and a second substrate having an electrode in this order, and the electrode (first electrode) and the first substrate of the first substrate.
  • the electrode (second electrode) of the substrate 2 is electrically connected to the electrode through the through hole penetrating the organic film.
  • the organic film provided between the first electrode and the second electrode acts as an insulating layer, so that a short circuit of current can be suppressed. Since the conventional insulating layer uses a hard inorganic material such as SiN or SiO 2 , if warpage occurs during the formation of the insulating layer or the laminated body, this cannot be eliminated by stress relaxation, and as a result, it cannot be eliminated. The electrodes were prone to misalignment and cracking.
  • the present invention by using an organic film having higher flexibility than an inorganic material as an insulating layer, high electrical connection reliability can be exhibited.
  • the warp can be eliminated even when the substrate or the laminated body is warped, even when a thin substrate on which the warp is likely to occur is laminated, the electrodes are less likely to be displaced or cracked and high electricity is generated. It is possible to obtain a laminated body having target connection reliability.
  • the organic film of the laminate of the present invention can be formed by, for example, coating and curing a curable resin, so that the production efficiency can be improved. Can be enhanced.
  • the term “electrically connected” refers to a state in which the electrodes of the first substrate and the electrodes of the second substrate are connected by the conductive material or the like filled in the through holes.
  • the first substrate and the second substrate are not particularly limited, and a circuit board on which elements, wirings and electrodes are formed can be used.
  • a sensor circuit board provided with a pixel portion (pixel region), a circuit board on which peripheral circuit portions such as a logic circuit for executing various signal processes related to the operation of the solid-state image sensor are mounted can be used.
  • the electrode material and the conductive material of the first substrate and the second substrate are not particularly limited, and conventionally known electrode materials such as gold, copper, and aluminum can be used.
  • the organic film is not particularly limited as long as it is a layer containing an organic compound as a material, but a layer containing a resin as a material is preferable.
  • the organic film may contain components other than the resin material as long as the effects of the present invention are not significantly impaired.
  • the content of the resin material in the organic film is, for example, preferably 90% by weight or more, more preferably 95% by weight or more, still more preferably 99% by weight or more, and usually less than 100% by weight.
  • the resin material an organosilicon compound, a polysiloxane resin, or the like, which will be described later, can be used.
  • the weight loss rate of the organic film after heat treatment at 400 ° C. for 4 hours is preferably 5% or less.
  • the substrate can be bonded more reliably, and bubbles and cracks are generated at the interface due to the organic film decomposed during electrode bonding and at the interface. Peeling can be further suppressed.
  • the weight reduction rate is more preferably 3% or less, and further preferably 1% or less.
  • the lower limit of the weight reduction rate is not particularly limited, and the closer it is to 0%, the better, but the limit is about 0.5% in terms of manufacturing technology.
  • the composition of the organic film can be adjusted by adjusting the composition of the organic film, the type of resin material constituting the organic film, the curing conditions when producing the organic film, and the like. Specifically, for example, by using a resin material or an inorganic component having high heat resistance for the composition of the organic film, increasing the content of the cross-linking agent, etc., the weight reduction rate after the heat treatment at 400 ° C. for 4 hours is achieved. Can be reduced.
  • the type of resin material constituting the organic film may be a resin having high heat resistance (for example, a resin having a large molecular weight, a resin having a main chain or a substituent having high heat resistance, or an organic silicon compound described later).
  • the weight is reduced after the heat treatment at 400 ° C. for 4 hours. The rate can be reduced.
  • the surface hardness of the organic film measured by a nanoindenter is preferably 5 GPa or less. Since the organic film having the surface hardness in the above range has high flexibility, it is more difficult for the substrate or the laminate to warp, and even if the warp occurs, it is easier to eliminate the warp, so that the electrode is displaced. And cracks can be further suppressed.
  • the surface hardness is more preferably 5 GPa or less, further preferably 1 GPa or less.
  • the lower limit of the surface hardness is not particularly limited, but is, for example, 0.1 GPa or 0.2 GPa, preferably 0.3 GPa.
  • the surface hardness measured by the nano-indenter of the organic film can be adjusted by the type of the resin component constituting the organic film and the composition of the organic film. Specifically, for example, a compound having a rigid skeleton having a low glass transition point, which can be increased by introducing a rigid skeleton having a high glass transition point or adding an inorganic filler, or an organosilicon compound described later. Can be reduced by using.
  • the nano indenter is a device that measures the hardness from the relationship between the force applied when the needle is pierced on the surface of the sample and the stress, and can measure the hardness of the sample. The hardness of the surface can be measured by, for example, the following method.
  • the side surface (laminated surface) of the laminated body is embedded with cold resin and ground by a cross-section grinding device until the organic film is exposed. Then, using a nanoindenter (TI 950 TriboIndenter, manufactured by Cientaomicron or its equivalent), the sample is pushed 1000 nm at a measurement temperature of 23 ° C. and a measurement displacement of 200 nm / sec, and then a measurement probe is used at a rate of 200 nm / sec. It can be obtained by performing the measurement under the condition of removing the above. A Berkovich type diamond indenter is used as the measurement probe.
  • TI 950 TriboIndenter manufactured by Cientaomicron or its equivalent
  • the thickness of the organic film is not particularly limited, but is preferably 10 ⁇ m or more and 300 ⁇ m or less. When the thickness of the organic film is within the above range, the function as an insulating layer can be more exhibited, and the displacement and cracking of the electrodes can be further suppressed.
  • the thickness of the organic film is more preferably 20 ⁇ m or more, further preferably 30 ⁇ m or more, further preferably 200 ⁇ m or less, still more preferably 100 ⁇ m or less.
  • the organic film preferably contains an organosilicon compound and preferably has a structure represented by the following general formula (1).
  • an organosilicon compound By using an organosilicon compound, it is possible to further suppress the displacement and cracking of the electrodes. Further, since the organosilicon compound has excellent heat resistance, it is possible to further suppress the decomposition of the organic film due to the high temperature treatment performed at the time of manufacturing the laminate or manufacturing the electronic component using the laminate. Above all, it is more preferable that the organosilicon compound has an aromatic ring structure because the heat resistance is further improved and the displacement and cracking of the electrodes are further suppressed.
  • R 0 , R 1 and R 2 independently represent linear, branched or cyclic aliphatic groups, aromatic groups or hydrogen, respectively.
  • the aliphatic group and the aromatic group may or may not have a substituent.
  • m and n each represent an integer of 1 or more.
  • R 0 independently represents a linear, branched or cyclic aliphatic group, aromatic group or hydrogen.
  • the aliphatic group and the aromatic group may or may not have a substituent.
  • the R0 is preferably a phenyl group, an alkyl group having 1 to 20 carbon atoms or an arylalkyl group, and more preferably a phenyl group.
  • R 0 is a phenyl group and an alkyl group or an arylalkyl group having 1 to 20 carbon atoms, higher heat resistance can be exhibited.
  • R 1 and R 2 independently represent a linear, branched or cyclic aliphatic group, aromatic group or hydrogen, respectively.
  • the aliphatic group and the aromatic group may or may not have a substituent.
  • the R 1 and R 2 are preferably a phenyl group, an alkyl group having 1 to 20 carbon atoms or an arylalkyl group, and more preferably a phenyl group or a methyl group.
  • R 1 and R 2 are a phenyl group and an alkyl group or an arylalkyl group having 1 to 20 carbon atoms, higher heat resistance can be exhibited.
  • m and n are integers of 1 or more, respectively, and represent the number of repeating units.
  • the above m is preferably 30 or more, more preferably 50 or more, and preferably 100 or less.
  • the above n is preferably 1 or more, more preferably 3 or more, and preferably 8 or less.
  • the organic film is preferably a cured product of a curable resin composition.
  • a curable resin composition as the material of the organic film, an organic film can be formed by applying the curable resin composition to form a film and then curing the film, as compared with the case of using a conventional inorganic material. It is possible to improve the production efficiency.
  • the curable resin constituting the curable resin composition may be thermosetting or photocurable, but is preferably a thermosetting resin from the viewpoint of heat resistance.
  • the curable resin composition preferably contains an organosilicon compound having a reactive moiety.
  • an organosilicon compound having a reactive portion as the curable resin of the curable resin composition, it is possible to further suppress the displacement and cracking of the electrodes. Further, since the organosilicon compound has excellent heat resistance, it is possible to further suppress the decomposition of the organic film due to the high temperature treatment performed at the time of manufacturing the laminate or the electronic component using the laminate.
  • the reactive site include a hydroxyl group and an alkoxy group.
  • the content of the organosilicon compound having the reactive moiety is preferably 80 parts by weight or more, more preferably 90 parts by weight or more, still more preferably 95 parts by weight in 100 parts by weight of the resin solid content in the curable resin composition. It is more than a part.
  • the content of the organosilicon compound having the reactive moiety is preferably less than 100 parts by weight, more preferably 98 parts by weight or less in 100 parts by weight of the resin solid content in the curable resin composition.
  • the organosilicon compound having the above-mentioned reactive moiety preferably has a structure represented by the following general formula (1).
  • an organosilicon compound having such a reactive site it is possible to further suppress the displacement and cracking of the electrode.
  • the organosilicon compound having the above-mentioned reactive site has an aromatic ring structure because the displacement and cracking of the electrode can be further suppressed.
  • R 0 , R 1 and R 2 independently represent linear, branched or cyclic aliphatic groups, aromatic groups or hydrogen, respectively.
  • the aliphatic group and the aromatic group may or may not have a substituent.
  • m and n each represent an integer of 1 or more.
  • R 0 independently represents a linear, branched or cyclic aliphatic group, aromatic group or hydrogen.
  • the aliphatic group and the aromatic group may or may not have a substituent.
  • the R0 is preferably a phenyl group, an alkyl group having 1 to 20 carbon atoms or an arylalkyl group, and more preferably a phenyl group.
  • R 0 is a phenyl group and an alkyl group or an arylalkyl group having 1 to 20 carbon atoms, higher heat resistance can be exhibited.
  • R 1 and R 2 independently represent a linear, branched or cyclic aliphatic group, aromatic group or hydrogen, respectively.
  • the aliphatic group and the aromatic group may or may not have a substituent.
  • the R 1 and R 2 are preferably a phenyl group, an alkyl group having 1 to 20 carbon atoms or an arylalkyl group, and more preferably a phenyl group or a methyl group.
  • R 1 and R 2 are a phenyl group and an alkyl group or an arylalkyl group having 1 to 20 carbon atoms, higher heat resistance can be exhibited.
  • m and n are integers of 1 or more, respectively, and represent the number of repeating units.
  • the above m is preferably 30 or more, more preferably 50 or more, and preferably 100 or less.
  • the above n is preferably 1 or more, more preferably 3 or more, and preferably 8 or less.
  • the curable resin composition preferably has a tensile elastic modulus of 5 GPa or less at 25 ° C. of the cured product.
  • the tensile elastic modulus is more preferably 1 Gpa or less, further preferably 700 MPa or less, and even more preferably 500 MPa or less.
  • the lower limit of the tensile elastic modulus is not particularly limited, but is preferably 100 MPa or more from the viewpoint of reliably connecting the substrates.
  • the tensile elastic modulus can be measured by a dynamic viscoelasticity measuring device (for example, DVA-200 manufactured by IT Measurement and Control Co., Ltd.). More specifically, when the curable resin composition is thermosetting, it is heated at 70 ° C. for 30 minutes, then heated at 90 ° C. for 1 hour to dry the solvent, and further heated at 200 ° C. for 1 hour to cure. After the sex resin composition is cured, the measurement is carried out under the conditions of a constant speed temperature rise tension mode, a temperature rise rate of 10 ° C./min, and a frequency of 10 Hz. When the curable resin composition is photocurable, it is dried by solvent by heating at 70 ° C. for 30 minutes and then at 90 ° C.
  • a dynamic viscoelasticity measuring device for example, DVA-200 manufactured by IT Measurement and Control Co., Ltd.
  • the tensile elastic modulus at 25 ° C. can be adjusted by the composition of the curable resin composition and the type of the curable resin. Specifically, for example, a compound having a rigid skeleton having a low glass transition point and a compound having a rigid skeleton having a low glass transition point, which can increase the tensile elastic modulus by introducing a rigid skeleton having a high glass transition point or adding an inorganic filler, or the above. The tensile elastic modulus can be lowered by using an organic silicon compound.
  • the weight average molecular weight of the curable resin is not particularly limited, but is preferably 5000 or more and 150,000 or less. When the molecular weight of the curable resin is within the above range, the film-forming property at the time of coating is improved, and the displacement and cracking of the electrodes can be further suppressed.
  • the molecular weight of the curable resin is more preferably 10,000 or more, further preferably 30,000 or more, further preferably 100,000 or less, and further preferably 70,000 or less.
  • the weight average molecular weight of the curable resin is measured as a polystyrene-equivalent molecular weight by a gel permeation chromatography (GPC) method. It can be calculated by the polystyrene standard using THF as the elution solvent and HR-MB-M6.0 ⁇ 150 mm (manufactured by Waters) or an equivalent product thereof as the column.
  • GPC gel permeation chromatography
  • the compound having the structure of the general formula (1) is, for example, reacting the compound (2) represented by the following general formula (2) with the compound (3) represented by the following general formula (3). Can be obtained by
  • R 0 and R 1 represent the same functional groups as R 0 and R 1 in the general formula (1).
  • R 2 represents the same functional group as R 2 in the general formula (1).
  • h represents a natural number, preferably 3 to 6, and more preferably 3 or 4.
  • the compound (2) can be obtained, for example, by reacting a salt such as the compound (4) represented by the following general formula (4) with the compound (5) represented by the following general formula (5). Can be done.
  • the compound (2) can also be obtained by reacting the compound (5) in which X is hydrogen with the compound (4) and then hydrolyzing the compound (4).
  • R 0 represents the same functional group as R 0 and R 1 in the general formula (1).
  • R 1 means the same functional group as R 1 in the general formula (1), and X means hydrogen or a hydroxyl group.
  • the compound (4) is, for example, hydrolyzed from the compound (6) represented by the following general formula (6) in the presence of a monovalent alkali metal hydroxide and water, in the presence or absence of an organic solvent.
  • a monovalent alkali metal hydroxide lithium hydroxide, sodium hydroxide, potassium hydroxide, cesium hydroxide and the like can be used.
  • R 0 means the same functional group as R 0 in the general formula (1).
  • the curable resin composition preferably contains a catalyst that promotes the curing reaction.
  • the curable resin composition has a catalyst, the curable resin can be cured more completely, and the decomposition of the organic film due to the high temperature treatment can be further suppressed.
  • the catalyst include organic tin compounds such as dibutyltin dilaurate and stannous acetate, metal carboxylates such as zinc naphthenate, zirconia compounds, and titanium compounds. Of these, dibutyltin dilaurate is preferable because it can accelerate the curing of the curable resin composition.
  • the catalyst is present even after the curable resin composition has been cured. That is, it is preferable that the organic film contains a catalyst that promotes the curing reaction.
  • the content of the catalyst is not particularly limited, but is preferably 0.01 parts by weight or more and 10 parts by weight or less with respect to 100 parts by weight of the curable resin in the curable resin composition. By setting the content of the catalyst in the above range, the curing of the curable resin composition can be further promoted.
  • the content of the catalyst is more preferably 0.1 parts by weight or more, further preferably 1 part by weight or more, further preferably 7 parts by weight or less, and more preferably 5 parts by weight or less. More preferred.
  • the curable resin composition preferably contains a polyfunctional cross-linking agent capable of reacting with the reactive moiety of the organosilicon compound having the reactive moiety.
  • a polyfunctional cross-linking agent capable of reacting with the reactive moiety of the organosilicon compound By cross-linking between the polymers of the organosilicon compound having the above-mentioned reactive moiety with a polyfunctional cross-linking agent capable of reacting with the reactive moiety of the organosilicon compound, the cross-linking density of the cured product is increased and decomposition at high temperature is further performed. It is suppressed. As a result, it is possible to further suppress the generation of voids due to the generation of decomposition gas during high-temperature treatment, the misalignment of electrodes at the time of connection, and the deterioration of electrical connection reliability.
  • polyfunctional cross-linking agent examples include, when the reactive site is a silanol group, an alkoxysilane compound such as a dimethoxysilane compound, a trimethoxysilane compound, a diethoxysilane compound, a triethoxysilane compound, or tetramethoxysilane.
  • alkoxysilane compound such as a dimethoxysilane compound, a trimethoxysilane compound, a diethoxysilane compound, a triethoxysilane compound, or tetramethoxysilane.
  • silicate oligomers are preferable from the viewpoint of improving the crosslink density and heat resistance.
  • alkoxysilane compounds include dimethoxydimethylsilane, trimethoxymethylsilane, tetraethoxysilane, tetrapropoxysilane, tetrabutoxysilane, and examples of silicate oligomers include silicate MS51, MS56, MS57, and MS56S (all). Mitsubishi Chemical Co., Ltd.), ethyl silicate 40, ethyl silicate 48, EMS485 (all manufactured by Corcote) and the like.
  • the content of the polyfunctional cross-linking agent is not particularly limited, but is preferably 1 part by weight or more and 50 parts by weight or less with respect to 100 parts by weight of the curable resin in the curable resin composition.
  • the content of the polyfunctional cross-linking agent is more preferably 3 parts by weight or more, further preferably 5 parts by weight or more, further preferably 30 parts by weight or less, and more preferably 20 parts by weight or less. Is more preferable.
  • the curable resin composition may contain other additives such as a viscosity modifier, a filler, and an adhesion imparting agent, if necessary.
  • the laminate of the present invention can be made into a laminate having high electrical connection reliability by curing the curable resin composition to form the organic film.
  • a first substrate having an electrode, an organic film, and a second substrate having an electrode are provided in this order, and the electrode possessed by the first substrate and the electrode possessed by the second substrate are
  • a curable resin composition used for the organic film of a laminate electrically connected through a through hole penetrating the organic film is also one of the present inventions.
  • the laminate of the present invention preferably has an inorganic layer having a thickness of 1 nm or more and 1 ⁇ m or less between the first substrate and the second substrate.
  • an inorganic layer between the first substrate and the second substrate, it is possible to obtain a laminated body having improved insulation and higher connection reliability.
  • the insulating layer made of an inorganic material having a thickness of about 10 to 20 ⁇ m is provided, the warp of the substrate and the laminated body cannot be eliminated, which causes a decrease in connection reliability.
  • the inorganic layer in 1 has a thin thickness of 1 ⁇ m or less, the warp generated in the substrate and the laminated body can be eliminated even when the inorganic layer is provided.
  • the material of the inorganic layer is not particularly limited, and examples thereof include SiN, SiO 2 , Al 2 O 3, and the like. Of these, SiN and SiO 2 are preferable because they are excellent in insulation and heat resistance.
  • the thickness of the inorganic layer is more preferably 5 nm or more, further preferably 10 nm or more, further preferably 500 nm or less, and more preferably 100 nm or less from the viewpoint of further enhancing the connection reliability of the laminated body. Is more preferable.
  • the laminate of the present invention preferably has a barrier metal layer on the surface of the through holes.
  • the barrier metal layer has a role of preventing diffusion of the conductive material (for example, Cu atom in the case of a Cu electrode) filled in the through hole into the organic film.
  • the conductive material for example, Cu atom in the case of a Cu electrode
  • the conductive material that fills the through hole is covered with the barrier metal layer except for the surface in contact with the electrode. Poor continuity can be further suppressed.
  • known materials such as tantalum, tantalum nitride, and titanium nitride can be used.
  • the thickness of the barrier metal layer is not particularly limited, but is more preferably 1 nm or more, further preferably 10 nm or more, still more preferably 100 nm or less, from the viewpoint of further enhancing the connection reliability of the laminated body. It is more preferably 50 nm or less.
  • FIG. 1 shows a diagram schematically showing one aspect of the laminated body of the present invention.
  • the first substrate 1 having the electrodes 3 and the second substrate 2 are adhered to each other via the organic film 4, and the first substrate 1 and the second substrate 2 are bonded to each other.
  • the electrode 3 on the substrate 2 has a structure in which the electrode 3 is electrically connected through a conductive material filled in the through hole 5 provided in the organic film 4.
  • the portion of the organic film 4 that hits the insulating layer is a hard inorganic material, so if warpage occurs in the substrate or laminate, it cannot be eliminated by stress relaxation, and the electrodes are likely to shift or crack. It was.
  • the warp of the substrate or the laminated body can be eliminated, so that the displacement or cracking of the electrodes can be suppressed.
  • FIG. 2 shows a diagram schematically showing one aspect of the laminated body of the present invention.
  • the inorganic layer 6 is provided between the organic films 4 to further enhance the insulating property.
  • the inorganic layer 6 of the present invention has a thickness of 1 nm to 1 ⁇ m and is thinner than the insulating layer of the conventional laminated body, so that it does not hinder the warping of the substrate or the laminated body.
  • the inorganic layer 6 is provided between the organic films 4 in FIG. 2, it may be provided on the first substrate 1 and the second substrate 2.
  • the inorganic layer 6 is provided on the organic film 4 on the first substrate 1 side and the second substrate 2 side, respectively, but it may be provided on only one of them.
  • the barrier metal layer 7 is provided on the surface of the through hole 5.
  • the conductive material filled in the through hole 5 is less likely to diffuse into the organic film 4, so that short circuits and poor continuity can be further suppressed.
  • Examples of the method for producing the laminate of the present invention include a step of forming an organic film on the surface on which the electrode of the first substrate having an electrode is formed, a step of forming a through hole in the organic film, and the above-mentioned step.
  • An example thereof includes a manufacturing method including a step of bonding a second substrate on which a bonded electrode is formed so that the bonded electrodes are bonded to each other. Such a method for manufacturing a laminated body is also one of the present inventions.
  • a step of forming an organic film on a surface of a first substrate having an electrode on which an electrode is formed is performed.
  • the same ones as the first and second substrates and the organic film having the electrodes of the laminated body of the present invention can be used.
  • the step of forming the organic film preferably includes a step of applying the curable resin composition and then curing the curable resin composition in addition to solvent drying.
  • the curable resin composition the same curable resin composition as that of the present invention can be used.
  • the coating method is not particularly limited, and a conventionally known method such as a spin coating method can be used.
  • the solvent drying conditions are not particularly limited, but are preferably 70 ° C. or higher, more preferably 100 ° C. or higher, preferably 250 ° C. or lower, and more preferably 200 ° C. or lower from the viewpoint of reducing residual solvent and improving the heat resistance of the organic film. It is preferable to heat at a temperature of, for example, 30 minutes, more preferably about 1 hour.
  • the curing conditions are not particularly limited, but from the viewpoint of sufficiently advancing the curing reaction and further improving the heat resistance, when the curable resin composition is a thermosetting resin, it is preferably 200 ° C. or higher, more preferably 220 ° C. As described above, it is preferable to heat at a temperature of preferably 400 ° C. or lower, more preferably 300 ° C. or lower, for example, for 1 hour or longer, more preferably 2 hours or longer.
  • the upper limit of the heating time is not particularly limited, but is preferably 3 hours or less from the viewpoint of suppressing thermal decomposition of the organic film.
  • the curable resin composition is a photocurable resin, a 405nm ultraviolet light, preferably 1500 mJ / cm 2 or more, more preferably it is preferred to irradiate 3000 mJ / cm 2 or more.
  • a step of forming through holes in the organic film is then performed.
  • the through holes may be patterned.
  • the method for forming the through hole is not particularly limited, and the through hole can be formed by laser irradiation such as a CO 2 laser or etching.
  • the through hole is formed so as to penetrate the other layer and expose the electrode surface of the substrate.
  • a step of forming an inorganic layer and / or a barrier metal layer is then performed, if necessary.
  • the inorganic layer and the barrier metal layer the same ones as the laminated body of the present invention can be used.
  • the inorganic layer and the barrier metal layer can be formed by sputtering, vapor deposition, or the like.
  • the step of forming the inorganic layer is preferably performed before and / or after the step of forming the organic film.
  • the formation of the barrier metal layer is preferably performed after the step of forming the through holes.
  • a step of filling the through holes with a conductive material is then performed.
  • Plating or the like can be used as a method for filling the conductive material.
  • the conductive material the same conductive material as that of the laminate of the present invention can be used.
  • a step of polishing the surface of the substrate on the side filled with the conductive material to form a bonded electrode is then performed.
  • a bonded electrode connecting the electrodes formed on the two substrates is formed.
  • the polishing preferably flattens and removes the layer formed of the conductive material until the organic film is exposed or, if any, the inorganic layer is exposed.
  • the polishing method is not particularly limited, and for example, a chemical mechanical polishing method or the like can be used.
  • a method for manufacturing a substrate having a bonded electrode, which comprises a step of polishing the surface of the substrate to form a bonded electrode, is also one of the present inventions.
  • the substrate having the bonding electrodes is a member for forming a laminated body by bonding the bonding electrodes between the substrates so that they are bonded to each other.
  • the substrate, the organic film, the curable resin composition and other configurations and each step are the same as the description regarding the laminate, the curable resin composition and the method for producing the laminate of the present invention.
  • the method for manufacturing a laminated body of the present invention is a step of bonding the first substrate on which the junction electrode is formed and the second substrate on which the junction electrode is formed so that the junction electrodes are bonded to each other. I do.
  • Examples of the method of adhering the first substrate and the second substrate include a method of melting the electrodes and the connecting electrodes by heat treatment and connecting them. The heat treatment is usually about 400 ° C. for 4 hours.
  • the application of the laminate of the present invention is not particularly limited, but it has high electrical connection reliability, and warpage of the substrate and the laminate can be suppressed even when joining thin substrates to each other. It can be suitably used for a laminated body constituting an image pickup device. A semiconductor device and an image pickup device having such a laminated body of the present invention are also one of the present inventions.
  • a laminate having high electrical connection reliability, a curable resin composition used for the laminate, a method for producing the laminate, and a substrate having a bonding electrode used for manufacturing the laminate are manufactured.
  • a semiconductor device and an imaging device having the method and the laminated body can be provided.
  • a cooling tube, a mechanical stirrer, a Dean-Stark tube, an oil bath, and a thermometer protection tube were attached to the 100 mL flask, and the inside of the flask was replaced with nitrogen.
  • DD (Me) -OH 5.0 g
  • Octamethylcyclotetrasiloxane (D4) 2.5 g
  • RCP-160M strongly acidic cation exchange resin, manufactured by Mitsubishi Chemical Corporation: water content 23.4 mass%) 0.5 g, 51.0 mL of dehydrated toluene was placed in a flask. After refluxing for 1 hour, 0.12 g of water containing 22.4 mL of toluene and 23.4 mass% of RCP-160M was extracted.
  • SR-13 is a silsesquioxane compound that does not satisfy the formula (1).
  • SR-33 is a silsesquioxane having an aromatic ring group and not satisfying the formula (1).
  • PDMS resin KR-255 manufactured by Shin-Etsu Chemical Co., Ltd. was used as the PDMS resin.
  • Manufacture of Wafer 1 A film was formed on a 12 inch silicon wafer in the order of SiO: 500 nm, SiCN: 50 nm, and SiO: 250 nm by plasma CVD. Using a photomask, a 250 nm SiO layer on the surface was etched, then Ta was formed at 50 nm as a barrier metal layer, and TaN was further formed at 10 nm on it, Cu-plated, and flattened by CMP to prepare an electrode pattern. A SiCN layer (50 nm) and a SiO layer (500 nm) were sequentially deposited on the electrode pattern by plasma CVD to obtain a wafer 1 having an electrode. (9) Manufacture of Wafer 2 The wafer 2 was manufactured in the same manner as the wafer 1 except that the opposite connection electrodes and the electrodes formed on the wafer were patterned so as to form a daisy chain when bonded.
  • Example 1 100 parts by weight of the obtained POSS-A, 0.1 part by weight of dibutyltin dilaurate as a catalyst, and 1 part by weight of silicate MS51 (manufactured by Mitsubishi Chemical Corporation) as a cross-linking agent are dissolved in propylene glycol monoethyl acetate so that the resin solid content becomes 50%.
  • a curable resin composition solution was obtained by mixing with.
  • the obtained curable resin composition solution was applied to the surface of the wafer 1 on which the electrodes were formed by a spin coater, heated at 70 ° C. for 30 minutes, then heated at 90 ° C. for 1 hour to dry the solvent, and further 200. By heating at ° C.
  • an organic film having a thickness of 20 ⁇ m was formed on the electrode surface of the wafer 1.
  • a 500 nm SiN layer was formed by plasma CVD.
  • a through hole was formed on the electrode of the wafer 1 by etching the SiN layer and the organic film and SiO500 nm and SiCN50 nm existing on the electrode surface of the wafer 1 using a photomask.
  • the diameter of the via to be etched was set to 20 ⁇ m, and the pitch with the adjacent via was set to 40 ⁇ m.
  • Ta was formed at 50 nm as a barrier metal layer, and TaN was further formed at 10 nm on the layer, and then Cu plating was performed to fill the through holes with a conductive material.
  • the surface on the Cu-plated side of the wafer 1 (the surface on the side where the organic film of the wafer 1 was laminated) was ground to remove unnecessary barrier layers and conductive materials, and a connection electrode was formed.
  • an organic film and a connecting electrode were formed on the wafer 2 in the same manner as the wafer 1 except that the pattern was processed so that a daisy chain could be formed on the facing electrodes.
  • bonding two substrates in vacuum to connection electrodes overlap each other to obtain a laminated body by heat treatment of 400 ° C. 4 h.
  • Example 2 A laminated body was obtained in the same manner as in Example 1 except that the type of the curable resin and the presence or absence of the catalyst were as shown in Table 1.
  • Example 9 A laminate was obtained in the same manner as in Example 5 except that the content of silicate MS51 (manufactured by Mitsubishi Chemical Corporation) as a cross-linking agent was 3.2 parts by weight.
  • Example 10 A laminate was obtained in the same manner as in Example 5 except that the content of silicate MS51 (manufactured by Mitsubishi Chemical Corporation) as a cross-linking agent was 16 parts by weight.
  • Example 11 A laminate was obtained in the same manner as in Example 5 except that the content of silicate MS51 (manufactured by Mitsubishi Chemical Corporation) as a cross-linking agent was 32 parts by weight.
  • Example 12 After the formation of the organic film, a laminate was obtained in the same manner as in Example 1 except that a SiN layer having a diameter of 500 nm was not formed.
  • Plasma CVD was applied to the surface of the wafer 1 on which the electrodes were formed to form an inorganic layer made of Si 3 N 4 having a thickness of 20 ⁇ m.
  • a laminate was obtained in the same manner as in Example 1 except that the inorganic layer was used as a substitute for the organic film.
  • the detailed conditions for plasma CVD are as follows.
  • Comparative Example 2 Using SiH 4 gas and oxygen gas as raw material gases, except for forming an inorganic layer made of SiO 2 having a thickness of 20 ⁇ m by changing the plasma CVD target SiO 2 was obtained a laminate in the same manner as in Comparative Example 1.
  • connection reliability The conduction of current was confirmed for the electrodes located at the center of the wafer and the positions of 5 cm and 10 cm from the center of the wafer of the laminates obtained in Examples and Comparative Examples, and the initial connection reliability was evaluated according to the following criteria.
  • the electrodes at each position are daisy chains consisting of 10 ⁇ 10 electrodes. ⁇ : When there is continuity after wafer bonding at all positions ⁇ : When there is a conduction failure part after wafer bonding
  • the peeling area of the electrode portion arranged at the center of the wafer and 5 cm and 10 cm from the center of the wafer was measured with an ultrasonic imaging device. Based on the obtained peeled area, the adhesive reliability was evaluated according to the following criteria. The evaluation was performed on the laminated body before the reliability test (initial stage) and after the reliability test (100 sets), respectively. ⁇ : Peeling area is less than 5% ⁇ : Peeling area is 5% or more and less than 30% ⁇ : Peeling area is 30% or more
  • a laminate having high electrical connection reliability, a curable resin composition used for the laminate, a method for producing the laminate, and a substrate having a bonding electrode used for manufacturing the laminate are manufactured.
  • a semiconductor device and an imaging device having the method and the laminated body can be provided.

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  • Chemical & Material Sciences (AREA)
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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Laminated Bodies (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Silicon Polymers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
PCT/JP2021/023227 2020-06-22 2021-06-18 積層体、硬化性樹脂組成物、積層体の製造方法、接合電極を有する基板の製造方法、半導体装置及び撮像装置 Ceased WO2021261403A1 (ja)

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US18/010,288 US20230245936A1 (en) 2020-06-22 2021-06-18 Laminate, curable resin composition, method for manufacturing laminate, method for manufacturing substrate having junction electrode, semiconductor device, and image capturing device
EP21829982.4A EP4169971A4 (en) 2020-06-22 2021-06-18 LAMINATE, CURABLE RESIN COMPOSITION, METHOD FOR MANUFACTURING LAMINATE, METHOD FOR MANUFACTURING SUBSTRATE HAVING JUNCTION ELECTRODE, SEMICONDUCTOR DEVICE, AND IMAGE CAPTURE DEVICE
CN202180020010.XA CN115244670A (zh) 2020-06-22 2021-06-18 层叠体、固化性树脂组合物、层叠体的制造方法、具有接合电极的基板的制造方法、半导体装置和摄像装置
JP2021552191A JP7144624B2 (ja) 2020-06-22 2021-06-18 積層体、硬化性樹脂組成物、積層体の製造方法、接合電極を有する基板の製造方法、半導体装置及び撮像装置
KR1020227026941A KR20230028205A (ko) 2020-06-22 2021-06-18 적층체, 경화성 수지 조성물, 적층체의 제조 방법, 접합 전극을 갖는 기판의 제조 방법, 반도체 장치 및 촬상 장치
JP2022140717A JP7374270B2 (ja) 2020-06-22 2022-09-05 硬化性樹脂組成物
JP2023182417A JP2024010081A (ja) 2020-06-22 2023-10-24 積層体、硬化性樹脂組成物、積層体の製造方法、接合電極を有する基板の製造方法、半導体装置及び撮像装置

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WO2025063069A1 (ja) * 2023-09-21 2025-03-27 積水化学工業株式会社 硬化性樹脂組成物、硬化膜、積層体及び半導体装置

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EP4169971A1 (en) 2023-04-26
TW202204482A (zh) 2022-02-01
CN115244670A (zh) 2022-10-25
JP7374270B2 (ja) 2023-11-06
JP2024010081A (ja) 2024-01-23
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US20230245936A1 (en) 2023-08-03

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