WO2021261284A1 - 接合体、および静電チャック - Google Patents
接合体、および静電チャック Download PDFInfo
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- WO2021261284A1 WO2021261284A1 PCT/JP2021/022229 JP2021022229W WO2021261284A1 WO 2021261284 A1 WO2021261284 A1 WO 2021261284A1 JP 2021022229 W JP2021022229 W JP 2021022229W WO 2021261284 A1 WO2021261284 A1 WO 2021261284A1
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- layer
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- joining
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
- B23Q3/154—Stationary devices
- B23Q3/1543—Stationary devices using electromagnets
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q2703/00—Work clamping
- B23Q2703/12—Accessories for attaching
Definitions
- the present invention relates to a bonded body in which two members are joined.
- Patent Document 1 describes a technique in which a joining layer for joining two members has a solder and a wire mesh to make the thickness of the joining layer uniform and secure the thickness, and to suppress a decrease in thermal stress relaxation ability. Is disclosed.
- Patent Document 2 discloses a technique of relaxing thermal stress by deformation of an intermediate layer by joining a ceramic material and a metal material by interposing a porous metal material as an intermediate layer.
- Patent Document 2 since the cell structure is fixed by the bonding layer after bonding, there is a problem that the stress buffering effect becomes small when the bonded body is used. Further, Patent Document 2 does not mention the degree of impregnation of the brazing material into the porous metal material, and the bonding may not be sufficiently performed depending on the degree of impregnation of the brazing material into the porous metal material. , The stress buffering effect may be reduced.
- the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide another technique capable of cushioning stress in a joined body in which two members are joined by using a joining material. And.
- the present invention has been made to solve at least a part of the above-mentioned problems, and can be realized as the following forms.
- a bonded body is provided. This joined body is arranged between the plate-shaped first member, the flat plate-shaped second member, and the first member and the second member, and joins the first member and the second member.
- a joint body comprising a joint portion, wherein the joint portion is composed of a first joint material, a first joint layer arranged on the first member side, and a second joint material, and the second member.
- a flat metal layer arranged between the first bonding layer and the second bonding layer and having a plurality of holes communicating with each other, the second bonding layer arranged on the side, and the said first.
- the first bonding material impregnated layer is arranged on the one bonding layer side and the first bonding material is impregnated in the plurality of holes
- the second bonding material is arranged on the second bonding layer side and the second bonding material is impregnated in the plurality of holes.
- the metal layer provided in the joint portion includes the pore layer, the metal layer can be deformed in the heating / cooling environment when the joint body is used. Therefore, the metal layer can buffer the stress caused by the deformation of the first member and the second member, and can suppress distortion, warpage, peeling, and the like of the bonded body. Further, since the metal layer is impregnated with the bonding material and the metal layer is formed with the first bonding material impregnating layer and the second bonding material impregnated layer, the first bonding layer, the second bonding layer and the metal layer are formed. The joining can be sufficiently performed. As a result, the first member and the second member can be sufficiently joined, and peeling can be suppressed.
- the pore layer of the metal layer may be formed from the center of the metal layer to the outer periphery.
- the metal layer may be felt of metal fiber. Since the felt of the metal fiber is easy to move, the stress can be relieved more appropriately in this way.
- the wire diameter of the metal fiber may be 1 ⁇ m or more and 30 ⁇ m or less. In this way, the pore layer of the metal layer can be appropriately formed.
- the porosity of the metal layer may be 50% or more and 90% or less. In this way, the stress relaxation effect of the pore layer of the metal layer can be sufficiently obtained.
- the average area of the bonding area of the metal layer with the first bonding layer and the bonding area of the metal layer with the second bonding layer is Smm 2 .
- tmm 0.07 log (S) ⁇ 0.1 may be used. By doing so, a more stress relaxation effect can be obtained.
- the first bonded material and the second bonded material are made of an inorganic substance or a metal, respectively. Since the inorganic bonding material and the metal bonding material have a higher heat resistant temperature than the organic bonding material such as resin, the bonded body can be used even in a high temperature environment such as, for example, 300 ° C. or higher.
- an electrostatic chuck is provided.
- the electrostatic chuck includes a bonded body, and the main surface of the first member is a mounting surface on which a holding object is placed.
- the stress is relaxed by the pore layer of the metal layer, and the deformation of the first member when the electrostatic chuck is used can be suppressed, so that the deformation of the mounting surface to be held is suppressed. It is possible to improve the holding performance of the electrostatic chuck.
- the present invention can be realized in various aspects, for example, a holding device including a bonded body, a semiconductor component including a bonded body, a wavelength conversion component including the bonded body, a method for manufacturing the bonded body, and a bonded body. It can be realized in the form of a manufacturing method of an electrostatic chuck provided with the above.
- FIG. 1 is an explanatory diagram schematically showing an XZ cross-sectional structure of the bonded body 10 of the first embodiment.
- the positive direction of the Y-axis is a direction toward the back side of the paper surface.
- FIG. 1 shows XYZ axes that are orthogonal to each other in order to specify the direction.
- the Z-axis positive direction is referred to as an upward direction
- the Z-axis negative direction is referred to as a downward direction, but the bonded body 10 is actually used in a direction different from such an orientation. You may.
- the joint body 10 is arranged between the flat plate-shaped first member 100, the flat plate-shaped second member 200, and the first member 100 and the second member 200, and the first member 100 and the second member 200 are connected to each other.
- a joint portion 300 to be joined is provided.
- the bonded body 10 is formed in a substantially columnar shape.
- the first member 100 is a plate-shaped member having a substantially circular planar main surface, and is made of ceramic.
- the diameter of the first member 100 is, for example, about 5 mm to 350 mm, and the thickness of the first member 100 is, for example, about 0.5 mm to 6 mm.
- Type of ceramic such as alumina (Al 2 0 3), aluminum nitride (AlN), zirconia (ZrO 2), silicon nitride (Si 3 N 4), is possible to use various ceramics such as silicon carbide (SiC) can.
- the first member 100 may be metal-plated. Further, the dimensions of the first member 100 can be appropriately set according to the purpose of use and the like.
- the second member 200 is, for example, a plate-shaped member having a substantially circular planar main surface having the same diameter as the first member 100, and is made of metal.
- the thickness of the second member 200 is, for example, about 1 mm to 30 mm.
- the second member 200 may be a substantially disk having a diameter different from that of the first member 100.
- various metals such as stainless steel, copper, aluminum, and aluminum alloy can be used. Further, the dimensions of the second member 200 can be appropriately set according to the purpose of use and the like.
- the joint portion 300 joins the first member 100 and the second member 200.
- the joint portion 300 includes a first joint layer 310 made of a first joint material and arranged on the first member 100 side, and a second joint layer 320 made of a second joint material and arranged on the second member 200 side. , A metal layer 330 arranged between the first bonding layer 310 and the second bonding layer 320.
- the first bonding material and the second bonding material are, for example, a brazing material containing titanium (Ti), a brazing material such as silver brazing, a filler material such as solder, and an adhesion of a silicone resin, an acrylic resin, an epoxy resin, or the like.
- a material, an inorganic adhesive such as a glass paste, or the like can be used.
- the heat resistant temperature is higher than that of an organic adhesive such as a resin. Therefore, even in a high temperature environment such as 300 ° C. or higher, the bonded body 10 can be used and is preferred.
- the first joint material and the second joint material may be different from each other or may be the same.
- the thicknesses of the first bonding layer 310 and the second bonding layer 320 are, for example, about 0.05 mm, respectively.
- the thicknesses of the first bonding layer 310 and the second bonding layer 320 can be appropriately set.
- bonding material when the first bonding material and the second bonding material are not distinguished, they are also simply referred to as "bonding material", and when the first bonding layer and the second bonding layer are not distinguished, they are also simply referred to as "bonding layer".
- the metal layer 330 is a plate-shaped member having a substantially circular planar main surface having the same diameter as the first member 100 and the second member 200, and a plurality of holes communicating with each other are formed.
- the metal layer 330 of the present embodiment is a felt of metal fibers.
- As the material of the metal fiber nickel, aluminum, copper, brass, stainless steel, alloys thereof and the like can be used.
- the thickness t (FIG. 1) of the metal layer 330 is not particularly limited, but is, for example, about 0.2 mm to 3 mm.
- the thickness of the metal layer 330 can be appropriately set, for example, based on the relationship with the bonding area between the first bonding layer 310 and the second bonding layer 320.
- the porosity of the metal layer 330 is not particularly limited, but is, for example, 50% or more and 90% or less.
- the wire diameter of the metal fiber is not particularly limited, but is, for example, 1 ⁇ m or more and 30 ⁇ m or less.
- the metal layer 330 is arranged on the first bonding layer 310 side and is arranged on the first bonding material impregnated layer 331 in which the first bonding material is impregnated in a plurality of holes and the second bonding layer 320 side, and is arranged on the second bonding material. Is arranged between the second bonding material impregnating layer 332 impregnated with a plurality of holes and the first bonding material impregnating layer 331 and the second bonding material impregnating layer 332, and the pore layer 333 having a plurality of holes is empty. And have.
- the joined body 10 of the present embodiment is formed by joining the first member 100 and the second member 200 with the first joining material and the second joining material via the metal layer 330.
- the bonded body 10 When the bonded body 10 is manufactured, a part of the first bonded material permeates a part of the metal layer 330 to form the first bonded material impregnated layer 331, and a part of the second bonded material is the metal layer 330.
- the second bonding material impregnated layer 332 is formed by penetrating a part of the material.
- a portion in which neither the first joint material nor the second joint material permeates is formed in a layered shape, and the portion becomes the pore layer 333.
- the pore layer 333 is formed from the central CP of the metal layer 330 to the outer peripheral OP1.
- the first member 100 is made of ceramic and the second member 200 is made of metal, and the coefficients of thermal expansion may be different from each other. Therefore, the amount of deformation of the first member 100 and the second member 200 may differ due to a change in the operating temperature of the bonded body 10.
- the metal layer 330 included in the joint portion 300 includes the pore layer 333, and the pore layer 333 can be deformed relatively freely, so that the operating temperature of the bonded body 10 is reached.
- the pore layer 333 is formed from the central CP of the metal layer 330 to the outer peripheral OP1, the stress buffering effect of the pore layer 333 is exerted on the first member 100 and the second member 100 and the second. It can be obtained over the entire surface of the main surface of the member 200. Therefore, peeling and warpage can be further suppressed.
- the metal layer 330 is impregnated with the bonding material, and the metal layer 330 is formed with the first bonding material impregnating layer 331 and the second bonding material impregnating layer 332.
- the first bonding layer 310 and the second bonding layer 320 can be sufficiently bonded to the metal layer 330.
- the first member 100 and the second member 200 can be sufficiently joined, and the peeling of the first member 100 and the second member 200 can be suppressed.
- FIG. 2 is a diagram showing the relationship between the porosity of the metal layer 330 and the amount of deformation of the first member 100.
- the bonded body 10 shown in FIG. 2 is a substantially cylindrical body having a diameter of 36 mm.
- the first member 100 is made of alumina (Al 2 O 3 ) and has a thickness of 3.6 mm.
- the second member 200 is made of stainless steel and has a thickness of 30 mm.
- the metal layer 330 is a felt of metal fibers, the type of metal is stainless steel, and the wire diameter of the fiber material is 10 ⁇ m.
- the first joining material and the second joining material are brazing materials containing titanium (Ti), and are sheet materials having a thickness of 0.05 mm.
- the porosity of the metal layer 330 is changed to 30%, 50%, 90%, and 95% as shown in the figure, and the first member 100 after joining and after the thermal cycle test is used.
- the amount of deformation was investigated.
- the joining temperature is 930 ° C.
- the thermal cycle test was carried out for 50 cycles with room temperature to 350 ° C. as one cycle.
- the amount of deformation of the first member 100 is the difference in height between the center and the end of the surface (main surface) of the first member 100.
- the void ratio was calculated as follows from the metal fiber texture A (g / cm 2 ) and the thickness B (cm) using the base metal density C (g / cm 3 ).
- Samples 2 to 5 have the same other configurations, although the porosity of the metal layer 330 is different. Although the sample 1 does not include the metal layer 330, other configurations are the same as those of the samples 2 to 5.
- the joint portion 300 does not include the metal layer 330. In this configuration, when the first member 100 and the second member 200 were joined, the first member 100 was cracked and could not be joined.
- Sample 2 has a porosity of the metal layer 330 of 30%.
- the amount of deformation of the first member 100 at the time of joining was 30 ⁇ m, and the sample 2 was relatively greatly deformed.
- the amount of deformation after the thermal cycle test was 18 ⁇ m, which was a decrease, but the metal fibers were torn in a part of the pore layer 333.
- the void ratio of the metal layer 330 is 30%, the voids are relatively small, and the stress buffering effect is reduced by increasing the bonding area and the contact area between the metal fibers, and a large stress is generated at the contact portion between the metal fibers. , It is probable that a tear has occurred.
- the porosity of the metal layer 330 is 50%, and in sample 4, the porosity of the metal layer 330 is 90%.
- the deformation of the first member 100 after joining is suppressed as compared with Sample 1, and the amount of deformation of the first member 100 does not change after joining and after the thermal cycle test. .. That is, the stress buffering effect was obtained by the metal layer.
- the porosity of the metal layer 330 is 95%. In this configuration, when the first member 100 and the second member 200 are joined, almost all of the joining material is impregnated in the metal layer 330, and the first member 100 and the second member 200 are joined. I could't.
- FIG. 3 is a diagram showing the relationship between the thickness of the metal layer and the stress buffering effect.
- the joint 10 shown in FIG. 3 has two types of substantially cylindrical diameters (referred to as “joint diameter” in FIG. 3) of 100 mm and 350 mm.
- the first member 100 is made of alumina (Al 2 O 3 ) and has a thickness of 6 mm.
- the second member 200 is made of stainless steel and has a thickness of 23 mm.
- the metal layer 330 is a felt of metal fibers, the type of metal is stainless steel, the wire diameter of the fiber material is 10 ⁇ m, and the porosity is 80%.
- the first joining material and the second joining material are brazing materials containing titanium (Ti), and are sheet materials having a thickness of 0.05 mm.
- the thickness of the metal layer 330 is set to 0.5 mm, 1.0 mm, and 3.0 mm for the first member 100 and the second member 200 having diameters of 100 mm and 350 mm, respectively.
- the material was used for joining with a joining material.
- the joining temperature is 930 ° C.
- the first member 100, the second member 200, the metal layer 330, and the joining material are joined using the same diameter.
- the thickness of the metal layer 330 is 0.5 mm for both the joint diameter of 100 mm and 350 mm, a part of the metal fiber of the metal layer is torn.
- the thickness of the metal layer 330 was 1.0 mm and 3.0 mm, the bonded state was good. That is, when the thickness of the metal layer 330 is 1.0 mm and 3.0 mm, it can be said that the stress buffering effect of the metal layer is obtained.
- the relationship between the thickness of the metal layer 330 and the stress buffering effect also differs depending on the joint area.
- the average area of the bonding area S1 (FIG. 1) of the metal layer 330 with the first bonding layer 310 and the bonding area S2 (FIG. 1) of the metal layer 330 with the second bonding layer 320 is Smm 2 , and the metal layer is formed.
- the thickness of 330 is tmm and t ⁇ 0.07 log (S) ⁇ 0.1, a more stress relaxation effect can be obtained.
- FIG. 4 is a diagram showing the relationship between the wire diameter of the metal fiber of the metal layer and the stress buffering effect.
- the first member 100 is a substantially disk having a diameter of 5 mm and a thickness of 0.5 mm, which is made of silicon (Si) and plated with metal.
- the second member 200 is a substantially disk made of copper and having a diameter of 20 mm and a thickness of 1 mm.
- the metal layer is a felt of a metal (copper) fiber material having a void ratio of 80%, and is a substantially disk having a diameter of 7 mm and a thickness of 0.2 mm. These were bonded at a bonding temperature of 280 ° C.
- the first member 100, the first bonding layer 310, and the second bonding layer 320 have the same diameter, the metal layer 330 has a larger diameter than them, and the second member 200 has a larger diameter than the metal layer 330.
- the diameter is large.
- felts of metal fibers having different wire diameters (10 ⁇ m, 30 ⁇ m, 50 ⁇ m) are used as the metal layer 330, and after joining the first member 100 and the second member 200, observation with transmitted X-rays is performed. Cross-sectional observation was performed to confirm the presence or absence of voids.
- the wire diameter of the metal fiber is 50 ⁇ m, even if the porosity is the same as when the wire diameter of the metal fiber is 10 ⁇ m or 30 ⁇ m, one void becomes large and the bonding material is easily impregnated.
- a metal fiber felt is used as the metal layer 330, a pore layer can be formed when the wire diameter is 30 ⁇ m or less, so that a stress buffering effect can be preferably obtained.
- FIG. 5 is an explanatory diagram schematically showing the XZ cross-sectional structure of the bonded body 10A in the second embodiment.
- the Y-axis positive direction is the direction toward the back side of the paper surface.
- FIG. 6 is an explanatory diagram schematically showing the planar configuration of the metal layer 330A in the second embodiment.
- the metal layer 330A is shown when viewed from above (Z-axis positive direction).
- FIG. 5 can be said to be a sectional view taken along the line AA in FIG. 5 and 6 show the central CP of the metal layer 330A and the outer peripheral OP1.
- the outer peripheral OP2 of the pore layer 333 of the metal layer 330A is shown by a broken line.
- the pore layer 333 of the metal layer 330 is not formed from the center of the metal layer 330 to the outer periphery.
- the outer peripheral OP2 of the pore layer 333 is arranged within a distance d from the outer peripheral OP1 of the metal layer 330A. That is, in the metal layer 330A, the first bonding material and the second bonding material are impregnated in the distance d inward from the outer peripheral OP1.
- the metal layer 330A is a disk having a radius R1
- the pore layer 333 is formed in the shape of a disk having a radius R2 (R2 ⁇ R1).
- the metal layer 330A includes the pore layer 333, the stress caused by the deformation of the first member 100 and the second member 200 can be buffered, and the joint body 10A is distorted, warped, and warped. It is possible to suppress peeling and the like.
- FIG. 7 is a perspective view schematically showing the external configuration of the electrostatic chuck 500 according to the third embodiment.
- FIG. 8 is an explanatory diagram schematically showing the XZ cross-sectional configuration of the electrostatic chuck 500. 7 and 8 show XYZ axes that are orthogonal to each other in order to specify the direction.
- the positive direction of the Y-axis is a direction toward the back side of the paper surface.
- the Z-axis positive direction is referred to as an upward direction
- the Z-axis negative direction is referred to as a downward direction, but the electrostatic chuck 500 is actually installed in a direction different from such an orientation. May be done.
- the electrostatic chuck 500 is a holding device that attracts and holds an object (for example, a wafer W) by electrostatic attraction, and is used, for example, for fixing a wafer W in a vacuum chamber of a semiconductor manufacturing apparatus.
- the electrostatic chuck 500 includes a bonded body 10B.
- the joint body 10B includes a first member 100B and a second member 200B arranged side by side in the vertical direction (Z-axis direction), and a joint portion 300 for joining the first member 100B and the second member 200B.
- the first member 100B is a plate-shaped member having a substantially circular planar mounting surface SS, and is made of ceramic (for example, alumina, aluminum nitride, etc.). That is, the main surface of the first member 100B is the mounting surface SS on which the object to be held is placed.
- the diameter of the first member 100B is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the first member 100B is, for example, about 1 mm to 10 mm.
- an adsorption electrode 400 (FIG. 8) formed of a conductive material (for example, tungsten, molybdenum, etc.) is arranged inside the first member 100B.
- the shape of the suction electrode 400 in the Z-axis direction is, for example, substantially circular.
- the second member 200B is a substantially circular planar plate-shaped member having a diameter larger than that of the first member 100B.
- the second member 200B is made of a metal such as aluminum or an aluminum alloy.
- the diameter of the second member 200B is, for example, about 220 mm to 550 mm (usually 220 mm to 350 mm), and the thickness of the second member 200B is, for example, about 20 mm to 40 mm.
- a refrigerant flow path 210 (FIG. 8) is formed inside the second member 200B.
- a refrigerant for example, a fluorine-based inert liquid, water, etc.
- the second member 200B is cooled and becomes the second member 200B via the joint portion 300.
- the heat transfer between the first member 100B and the first member 100B cools the first member 100B, and the wafer W held on the mounting surface SS of the first member 100B is cooled. Thereby, the temperature control of the wafer W is realized.
- the joint portion 300 is a substantially circular planar plate-shaped member having the same diameter as the first member 100B, and its configuration is the same as that of the first embodiment.
- the metal layer 330 of the joint portion 300 includes the pore layer 333, it is possible to cushion the stress caused by the deformation of the first member 100B and the second member 200B, and the first member. It is possible to suppress peeling and warpage of the first member 100B and the second member 200B. Therefore, it is possible to suppress a decrease in the holding performance of the electrostatic chuck 500. In addition, deterioration of the electrostatic chuck 500 can be suppressed.
- the first member is made of ceramic and the second member is made of metal, but the present invention is not limited thereto.
- the first member and the second member may both be ceramic members, or the first member and the second member may both be metal members.
- it may be formed of materials other than ceramics and metals.
- it may be formed of a resin such as glass, glass epoxy, a thermoplastic resin and a thermosetting resin, paper phenol, paper epoxy, a glass composite, a metal member having an insulating member thereof formed on the surface, or the like.
- the coefficient of thermal expansion of the material constituting the first member and the coefficient of thermal expansion of the material constituting the second member may be the same or different. Even if the coefficients of thermal expansion of both materials are the same, the amount of deformation of each is different because the temperature of the first member and the temperature of the second member are different. Therefore, when the first member and the second member are joined by the joining portion 300 of the above embodiment, the stress due to the deformation of the first member and the second member can be relaxed.
- At least one of the space between the first member and the joint and the second member and the joint may be further provided with another layer such as a metal layer.
- the other layer may be, for example, a layer formed by evaporation of titanium (Ti) in the brazing material forming the joint, a preformed metallized layer, or the like.
- felt of metal fiber is exemplified as the metal layer, but the present invention is not limited to this, and various metal layers can be used.
- a composite of metal fibers manufactured by knitting metal fibers such as a net of metal fibers or a woven cloth may be used.
- a composite of metal fibers produced by entwining a large number of metal fibers with each other or by bonding with heat or an adhesive may be used.
- a metal foam may be used. The foam refers to a material having a large number of pores inside.
- the bonding area between the metal layer 330 and the first bonding layer 310 and the bonding area between the metal layer 330 and the second bonding layer 320 may be the same or different.
- the electrostatic chuck is exemplified as the holding device, but the holding device is not limited to the electrostatic chuck.
- the holding device can be configured as a heater device for a vacuum device such as CVD, PVD, PLD (Pulsed Laser Deposition), a susceptor, or a mounting table.
- a bonded body which is a neutral body of a substantially circular plane is exemplified, but the plane shape is not limited to the above embodiment. For example, it may be a rectangular plane, a polygonal plane, or the like.
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Abstract
Description
図1は、第1実施形態の接合体10のXZ断面構成を概略的に示す説明図である。図1において、Y軸正方向は、紙面裏側に向かう方向である。図1には、方向を特定するために、互いに直交するXYZ軸が示されている。本明細書では、便宜的に、Z軸正方向を上方向といい、Z軸負方向を下方向というものとするが、接合体10は実際にはそのような向きとは異なる向きで用いられてもよい。
図2は、金属層330の空隙率と第1部材100の変形量との関係を示す図である。図2に示す接合体10は、直径36mmの略円柱である。第1部材100は、アルミナ(Al2O3)から成り、厚さは3.6mmである。第2部材200はステンレス鋼から成り、厚さは30mmである。金属層330は、金属繊維のフェルトであり、金属の種類はステンレス鋼、繊維材の線径は10μmである。第1接合材および第2接合材は、チタン(Ti)を含むろう材であり、厚さ0.05mmのシート材である。
空隙率=1-(A/B)/C
図5は、第2実施形態における接合体10AのXZ断面構成を概略的に示す説明図である。図5において、Y軸正方向は、紙面裏側に向かう方向である。図6は、第2実施形態における金属層330Aの平面構成を概略的に示す説明図である。図6では、金属層330Aを、上方(Z軸正方向)から見て示す。図5は、図6におけるA-A断面図ともいえる。図5、図6では、金属層330Aの中心CP、および外周OP1を図示している。図6では、金属層330Aの空孔層333の外周OP2を、破線で図示している。
図7は、第3実施形態における静電チャック500の外観構成を概略的に示す斜視図である。図8は、静電チャック500のXZ断面構成を概略的に示す説明図である。図7、図8には、方向を特定するために、互いに直交するXYZ軸が示されている。図8において、Y軸正方向は、紙面裏側に向かう方向である。本明細書では、便宜的に、Z軸正方向を上方向といい、Z軸負方向を下方向というものとするが、静電チャック500は実際にはそのような向きとは異なる向きで設置されてもよい。
本発明は上記の実施形態に限られるものではなく、その要旨を逸脱しない範囲において種々の態様において実施することが可能であり、例えば次のような変形も可能である。
100、100B…第1部材
200、200B…第2部材
210…冷媒流路
300…接合部
310…第1接合層
320…第2接合層
330、330A…金属層
331…第1接合材含浸層
332…第2接合材含浸層
333…空孔層
400…吸着電極
500…静電チャック
CP…中心
OP1、OP2…外周
R1、R2…半径
SS…載置面
S1、S2…接合面積
W…ウェハ
d…距離
Claims (8)
- 平板状の第1部材と、平板状の第2部材と、前記第1部材と前記第2部材との間に配置され、前記第1部材と前記第2部材とを接合する接合部と、を備える接合体であって、
前記接合部は、
第1接合材から成り、前記第1部材側に配置される第1接合層と、
第2接合材から成り、前記第2部材側に配置される第2接合層と、
前記第1接合層と前記第2接合層との間に配置され、互いに連通する複数の孔が形成された平板状の金属層であって、前記第1接合層側に配置され、前記第1接合材が前記複数の孔に含浸された第1接合材含浸層と、前記第2接合層側に配置され、前記第2接合材が前記複数の孔に含浸された第2接合材含浸層と、前記第1接合材含浸層と前記第2接合材含浸層との間に配置され、前記複数の孔が空である空孔層と、を有する金属層と、
を備えることを特徴とする、
接合体。 - 請求項1に記載の接合体であって、
前記金属層の前記空孔層は、前記金属層の中心から外周に亘って形成されていることを特徴とする、
接合体。 - 請求項1または請求項2に記載の接合体であって、
前記金属層は、金属繊維のフェルトであることを特徴とする、
接合体。 - 請求項3に記載の接合体であって、
前記金属繊維の線径は、1μm以上30μm以下であることを特徴とする、
接合体。 - 請求項1から請求項4のいずれか一項に記載の接合体であって、
前記金属層の空隙率は、50%以上90%以下であることを特徴とする、
接合体。 - 請求項1から請求項5のいずれか一項に記載の接合体であって、
前記金属層の前記第1接合層との接合面積と、前記金属層の前記第2接合層との接合面積と、の平均面積をSmm2とし、前記金属層の厚みをtmmとしたとき、
t≧0.07log(S)-0.1
であることを特徴とする、
接合体。 - 請求項1から請求項6のいずれか一項に記載の接合体であって、
前記第1接合材および前記第2接合材は、それぞれ、無機または金属からなることを特徴とする、
接合体。 - 静電チャックであって、
請求項1から請求項7のいずれか一項に記載の接合体を備え、
前記第1部材の主面は、保持対象物が載置される載置面であることを特徴とする、
静電チャック。
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CN202180034078.3A CN115551665A (zh) | 2020-06-26 | 2021-06-11 | 接合体和静电卡盘 |
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KR101355777B1 (ko) * | 2011-01-24 | 2014-02-04 | 스미토모 베이클리트 컴퍼니 리미티드 | 프리프레그, 적층판, 프린트 배선판 및 반도체 장치 |
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