WO2021253757A1 - Filtre à ondes acoustiques à couche mince et son procédé de fabrication - Google Patents

Filtre à ondes acoustiques à couche mince et son procédé de fabrication Download PDF

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Publication number
WO2021253757A1
WO2021253757A1 PCT/CN2020/135679 CN2020135679W WO2021253757A1 WO 2021253757 A1 WO2021253757 A1 WO 2021253757A1 CN 2020135679 W CN2020135679 W CN 2020135679W WO 2021253757 A1 WO2021253757 A1 WO 2021253757A1
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WIPO (PCT)
Prior art keywords
layer
electrode
substrate
acoustic wave
wave filter
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PCT/CN2020/135679
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English (en)
Chinese (zh)
Inventor
黄河
罗海龙
李伟
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中芯集成电路（宁波）有限公司
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Publication of WO2021253757A1 publication Critical patent/WO2021253757A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/071—Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

Definitions

  • the invention relates to the field of semiconductor device manufacturing, in particular to a thin-film acoustic wave filter and a manufacturing method thereof.
  • the radio frequency filter is an important part of the radio frequency system. It can filter out the interference and noise outside the communication spectrum to meet the signal-to-noise ratio requirements of the radio frequency system and the communication protocol. Taking a mobile phone as an example, since each frequency band needs a corresponding filter, dozens of filters may need to be set in a mobile phone.
  • the film bulk acoustic wave resonator includes two film electrodes, and a piezoelectric film layer is arranged between the two film electrodes. Its working principle is to use the piezoelectric film layer to generate vibration under an alternating electric field.
  • the bulk acoustic wave propagating in the thickness direction of the electric film layer is transmitted to the interface between the upper and lower electrodes and the air to be reflected back, and then reflected back and forth inside the film to form an oscillation.
  • a standing wave oscillation is formed.
  • the traditionally produced thin-film acoustic wave filter needs to be soldered with the PCB board after the basic structure is manufactured before it can be supplied to customers, because the filter needs to be matched with the capacitor and inductance designed inside the PCB board.
  • the thickness of the PCB board ranges from 200um to 700um, It takes up space very much. Therefore, how to reduce the overall volume of the device and reduce the packaging cost is a problem currently faced.
  • the present invention provides a thin film acoustic wave filter, including:
  • a first substrate including a first surface and a second surface opposed to each other;
  • the acoustic wave resonator unit is arranged on the first substrate and covers the first cavity.
  • the acoustic wave resonator unit includes a first electrode, a piezoelectric layer, and a second electrode; wherein the first electrode and the The second electrodes are respectively disposed on two opposite surfaces of the piezoelectric layer; or, the first electrode and the second electrode are both disposed on the side of the piezoelectric layer facing the first cavity, And relatively set;
  • a first through hole penetrates the first substrate and extends to the first electrode
  • a conductive layer covering the inner walls of the first through hole and the second through hole and the second surface of the first substrate;
  • the inductor and/or the capacitor are located on the second surface side of the first substrate.
  • the present invention also provides a method for manufacturing a thin-film acoustic wave filter, including:
  • an acoustic wave resonator unit Forming an acoustic wave resonator unit, the acoustic wave resonator unit including a piezoelectric layer, and a resonant electrode on the surface of the piezoelectric layer;
  • the metal plating layer is patterned to form a conductive layer and an inductor and/or a capacitor.
  • the beneficial effects of the present invention are: the production of matching capacitors and inductors on devices with cavities and functional units on the cavities through an electroplating process at a preset temperature, the production of capacitors and inductors is compatible with the thin film acoustic wave filter Production process, and use the conductive layer process required for TSV through-hole connection to form all or part of the capacitor/inductance, so that the interconnection distance between the capacitor inductance and the thin film acoustic wave filter is short, and the performance is better; no additional process is required to realize the function Integration simplifies the procedure of making capacitors/inductors separately, saves the high cost of the packaging process, and reduces the thickness of the device.
  • Fig. 1 shows a schematic structural diagram of a thin-film acoustic wave filter according to Embodiment 1 of the present invention.
  • Fig. 2 shows a schematic structural diagram of a thin-film acoustic wave filter according to another embodiment of the present invention.
  • Fig. 3 shows a schematic structural diagram of a thin-film acoustic wave filter according to another embodiment of the present invention.
  • FIGS. 4 to 10 show schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film acoustic wave filter of Embodiment 2.
  • FIG. 11 shows a schematic diagram of the structure corresponding to different steps of a method for manufacturing a thin-film acoustic wave filter of Embodiment 3.
  • FIG. 12 shows a schematic diagram of the structure corresponding to different steps of a method of manufacturing a thin-film acoustic wave filter of Embodiment 4
  • first element, component, region, layer or section discussed below may be represented as a second element, component, region, layer or section.
  • Spatial relation terms such as “under”, “below”, “below”, “below”, “above”, “above”, etc., in It can be used here for the convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientations shown in the figures, the spatial relationship terms are intended to include different orientations of devices in use and operation. For example, if the device in the drawing is turned over, then elements or features described as “under” or “under” or “under” other elements will be oriented “on” the other elements or features. Therefore, the exemplary terms “below” and “below” can include both an orientation of above and below. The device can be otherwise oriented (rotated by 90 degrees or other orientations) and the spatial descriptors used here are interpreted accordingly.
  • the method herein includes a series of steps, and the order of these steps presented herein is not necessarily the only order in which these steps can be performed, and some steps may be omitted and/or some other steps not described herein may be added to this method. If the components in a certain drawing are the same as those in other drawings, although these components can be easily identified in all the drawings, in order to make the description of the drawings more clear, this specification will not describe all the same components. The reference numbers are shown in each figure.
  • Embodiment 1 of the present invention provides a thin film acoustic wave filter.
  • FIG. 1 shows a schematic structural diagram of a thin film acoustic wave filter according to Embodiment 1. Please refer to FIG. 1.
  • the thin film acoustic wave filter includes:
  • a first substrate 10 which includes a first surface and a second surface opposite to each other;
  • the first surface is provided with a first cavity 110a;
  • the acoustic wave resonator unit is disposed on the first substrate and covers the first cavity 110a, and the acoustic wave resonator unit includes a first electrode 103, a piezoelectric layer 104, and a second electrode 105;
  • the first electrode 103 and the second electrode 105 are respectively disposed on two opposite surfaces of the piezoelectric layer 104;
  • the first through hole 140 is disposed outside the first cavity 110a, penetrates the first substrate 10, and extends to the first electrode 103;
  • the first through hole 150 is disposed outside the first cavity 110a, penetrates the first substrate 10, and extends to the second electrode 105;
  • the conductive layer 109 covers the inner walls of the first through hole 140 and the second through hole 150 and the second surface of the first substrate;
  • the inductor 107 and/or the capacitor 108 are located on the second surface side of the first substrate 10.
  • an air-gap thin-film piezoelectric acoustic wave filter is taken as an example for description.
  • the first substrate 10 is the lower substrate of the filter and serves as a carrier for forming the filter (located in the lower part of the entire filter).
  • the first substrate 10 may have a single-layer structure or a double-layer structure.
  • the first substrate 10 of this embodiment has a double-layer structure and includes a first substrate 100 and a support layer 102 provided on the first substrate.
  • the support layer 102 is disposed on the first surface of the first substrate 10, and the support layer 102 encloses the first cavity 110a.
  • the first cavity 110a may be formed by etching the support layer 102 through an etching process.
  • the first substrate 100 and the supporting layer 102 may be bonded together by a bonding layer, and the material of the bonding layer includes silicon oxide or silicon nitride.
  • the supporting layer 102 may also be formed on the first substrate 100 by deposition.
  • the first cavity 110a is a closed cavity, and the shape of the bottom surface is rectangular.
  • the shape of the first cavity 110a on the bottom surface of the first electrode 103 may also be circular. , Ellipse or polygons other than rectangles, such as pentagons, hexagons, etc.
  • the material of the first substrate 100 includes silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs) , Indium Phosphide (InP) or other III/V compound semiconductors, etc.
  • the material of the support layer 102 includes one or more combinations of silicon dioxide, silicon nitride, aluminum oxide, and aluminum nitride. When the first substrate 10 has a single-layer structure, the reference of the first substrate 10 may refer to the material of the first substrate 100.
  • the acoustic wave resonator unit includes a first electrode 103, a piezoelectric layer 104, and a second electrode 105 from bottom to top.
  • the first electrode 103 is located on the supporting layer 102
  • the piezoelectric layer 104 is located on the first electrode 103
  • the second electrode 105 is located on the piezoelectric layer 104.
  • it further includes a first trench 130a and a second trench 130b.
  • the first trench 130a is located on the lower surface of the piezoelectric laminate structure on the side where the first cavity 110a is located, and penetrates the first electrode. 103.
  • the second trench 130 b is located on the upper surface of the piezoelectric laminate structure and penetrates the second electrode 105.
  • the two ends of the first groove 130a and the two ends of the second groove 130b are arranged opposite to each other, so that the projection of the first groove 130a and the second groove 130b on the first substrate 10 The two junctions meet or have a gap.
  • the projections of the first groove 130a and the second groove 130b on the first substrate 10 are closed patterns, which constitute the effective resonance region of the resonator.
  • the first electrode 103, the piezoelectric layer 104, and the second electrode 105 in the effective resonance region are superimposed on each other in a direction perpendicular to the first substrate 10, and the boundary of the effective resonance region is located in the first cavity 110a. within the area.
  • the shape of the effective resonance area is an irregular polygon, such as a pentagon or hexagon without parallel opposite sides.
  • a first through hole 140 and a second through hole 150 are provided outside the first cavity 110a.
  • the first through hole 140 penetrates the first substrate 10 and extends to the first electrode 103, and the second through hole 150 penetrates through the first electrode 103.
  • a substrate 10 extends to the second electrode 105.
  • the conductive layer 109 covers the inner walls of the first through hole 140 and the second through hole 150 and the second surface of the first substrate 10.
  • the conductive layer 109 covers the inner walls of the first through holes 140 and the second through holes 150.
  • the through hole 140 and the second through hole 150 are filled with a conductive layer.
  • a capacitor 108 and/or an inductor 107 are provided on the second surface side of the first substrate 10. In this embodiment, the two ends of the inductor 107 and/or the capacitor 108 are electrically connected to the first electrode 103 and the second electrode 105 through the conductive layer 109, respectively.
  • the inductor and/or capacitor and the conductive layer are formed by the same layer of conductive material.
  • the inductor may be a spiral inductor on the plane of the conductive material formed by the same layer of conductive material.
  • the inductor may include a spiral sub-inductor on the plane of the conductive material, and also include other spiral inductors on the plane parallel to the conductive material.
  • the spiral sub-inductor that is, the inductor includes a multi-layer spiral sub-inductor.
  • one layer of conductive material for example, a spiral-shaped first sub-inductor is provided on the metal seed layer, a spiral-shaped second sub-inductor is provided on the electroplating material layer, and an insulating material is arranged between the sub-inductors at the position of the inductance.
  • the capacitor 108 includes a first electrode plate and a second electrode plate.
  • the first electrode plate and the second electrode plate are perpendicular to the surface of the first substrate 10 or parallel to the surface of the first substrate 10.
  • An insulating layer is provided between the first electrode plate and the second electrode plate.
  • the first electrode plate and the second electrode plate of the capacitor 108 are both arranged parallel to the first substrate 100.
  • the material of the conductive layer 109 is a metal material, such as copper, tungsten, and the like.
  • a passivation layer 160 is further provided on the surface of the conductive layer 109, and the passivation layer 160 is used to protect the conductive layer 109 from outside air pollution, such as moisture and dust.
  • the inductor 107 and/or the capacitor 108 are disposed in the peripheral area of the first cavity 110a. In order to reduce the influence of the magnetic field formed after the capacitor or the inductor is energized on the acoustic wave resonator unit.
  • the inductor and/or the capacitor may be arranged between two adjacent first cavities, as far away as possible from the acoustic wave resonator unit.
  • an etch stop layer (not shown in the figure) is further provided between the support layer 102 and the first electrode 103, the material of which includes but is not limited to silicon nitride (Si3N4) and silicon oxynitride (SiON).
  • the etch stop layer can be used to increase the structural stability of the finally manufactured thin film bulk acoustic wave resonator.
  • the etch stop layer has a lower etching rate than the support layer 102, and can be used to etch the support The layer 102 prevents over-etching during the process of forming the first cavity 110a, and protects the surface of the first electrode 103 located thereunder from damage, thereby improving the performance and reliability of the device.
  • the capping layer 200 is further provided with a first micro-device 2000.
  • the capping layer 200 includes a first semiconductor layer 200A and a first device layer 200B.
  • the first device layer 200B is close to the side of the second cavity 110b, and the first micro device 2000 is at least partially formed In the first device layer 200B.
  • the first micro-device 2000 includes: a diode, a triode, a MOS transistor, an electrostatic discharge protection device, a resistor, a capacitor, or an inductor.
  • the first micro-device 2000 may all be located in the device layer 200B.
  • the first micro-device 2000 When the first micro-device 2000 is a triode or a MOS transistor, its source and drain levels It may be located in the first semiconductor layer 200A. It also includes an electrical connection structure, which is connected to the first micro-device 2000 to draw out the electrical properties of the first micro-device 2000.
  • the electrical connection structure is a conductive plug 2001, which extends from the bottom surface of the first substrate 10 to the first micro-device 2000.
  • the material of the first semiconductor layer 200A includes silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs) , Indium Phosphide (InP) or other III/V compound semiconductors, etc.
  • the material of the first device layer 200B includes silicon oxide, silicon nitride, silicon oxynitride, and silicon carbonitride. The first device layer 200B and the adhesive layer 106 are combined by bonding.
  • the material of the adhesion layer 106 can be any suitable dielectric material, including but not limited to silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, or ethyl silicate.
  • silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, or ethyl silicate When the materials of the first device layer 200B and the adhesive layer 106 are the same, they can be directly bonded by using atomic bonding. When the materials of the first device layer 200B and the adhesion layer 106 are different, a bonding layer can be formed on the bonding surface of the two.
  • the material of the bonding layer includes: silicon oxide, silicon nitride, polysilicon, and ethyl silicate. Ester or organic curing film.
  • the first device layer 200B and the adhesion layer 106 are both silicon oxide, and atomic bonds are used for bonding, the bonding structure is strong and the process flow is simple.
  • a bonding layer structure is formed between the adhesive layer 106 and the first device layer 200B. It can be seen from the materials of the adhesive layer and the bonding layer that the materials of the two may be the same or different.
  • first through hole 140 and the second through hole 150 extend upward from below the filter and penetrate the first substrate 10.
  • first through hole 140 and the second through hole 150 may also extend downward from above the filter and penetrate the capping layer and the adhesive layer.
  • the through hole extends downward from the top of the filter, the conductive layer is located on the surface of the capping layer.
  • the "capping layer” is equivalent to the "first substrate”
  • the “adhesive layer” is equivalent to the "supporting layer”.
  • the acoustic wave filter is a firmly installed bulk acoustic wave filter, and the first substrate 10 is the upper cover of the filter.
  • the first electrode 103 is close to the first substrate 10, and the second electrode 105 is far away from the first substrate 10.
  • a second substrate 300 is included below the second electrode 105, and the second substrate 300 is provided with a Bragg reflection layer (the Bragg reflection layer in the dashed line frame is formed by alternating high acoustic impedance layers and low acoustic impedance layers).
  • the acoustic wave filter is a surface acoustic wave filter
  • the first electrode 103 and the second electrode 105 are both disposed on the piezoelectric layer 104 facing the first cavity 110a , And set relative to each other.
  • the first electrode 103 and the second electrode 105 are a first interdigital transducer and a second interdigital transducer.
  • the first substrate 10 is the upper cover of the filter.
  • Embodiment 2 of the present invention provides a method for manufacturing a thin-film acoustic wave filter, which includes the following steps:
  • S01 forming an acoustic wave resonator unit, the acoustic wave resonator unit including a piezoelectric layer, and a resonant electrode on the surface of the piezoelectric layer;
  • S04 forming a metal plating layer to cover the inner wall of the through hole and the surface of the first substrate; patterning the metal plating layer to form a conductive layer and an inductor and/or a capacitor.
  • FIGS. 4 to 10 show schematic diagrams of different stages of the manufacturing method of a thin-film acoustic wave filter according to Embodiment 2 of the present invention. Please refer to FIGS. 4 to 10 to describe each step in detail.
  • the resonance electrode includes a first electrode and a second electrode located on different sides of the piezoelectric layer, and forming an acoustic wave resonator unit includes:
  • a supporting substrate 400 is provided, on which the second electrode layer 105', the piezoelectric layer 104, and the first electrode layer 103' are sequentially formed.
  • the carrier substrate 400 may be at least one of the materials mentioned below: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium (SiGeC), indium arsenide ( InAs), gallium arsenide (GaAs), indium phosphide (InP) or other III/V compound semiconductors, ceramic substrates such as alumina, quartz or glass substrates can also be used.
  • the materials of the second electrode layer 105' and the first electrode layer 103' can use any suitable conductive material or semiconductor material well known to those skilled in the art, wherein the conductive material can be a metal material with conductive properties, for example, made of molybdenum ( Mo), aluminum (Al), copper (Cu), tungsten (W), tantalum (Ta), platinum (Pt), ruthenium (Ru), rhodium (Rh), iridium (Ir), chromium (Cr), titanium ( Ti), gold (Au), osmium (Os), rhenium (Re), palladium (Pd) and other metals or laminated layers of the above metals, semiconductor materials such as Si, Ge, SiGe, SiC, SiGeC, etc.
  • the second electrode layer 105' and the first electrode layer 103' can be formed by physical vapor deposition or chemical vapor deposition methods such as magnetron sputtering, vapor deposition, or the like.
  • the material of the piezoelectric layer 104 can be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), quartz (Quartz), potassium niobate (KNbO3) or tantalic acid Piezoelectric materials with wurtzite crystal structure such as lithium (LiTaO3) and their combinations.
  • the piezoelectric layer 104 may further include a rare earth metal, such as at least one of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La).
  • the piezoelectric layer 104 may further include a transition metal, such as at least one of zirconium (Zr), titanium (Ti), manganese (Mn), and hafnium (Hf). kind.
  • the piezoelectric layer 104 can be deposited and formed by any suitable method known to those skilled in the art, such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition.
  • the second electrode 105 and the first electrode 103 are made of metal molybdenum (Mo)
  • the piezoelectric layer 104 is made of aluminum nitride (AlN).
  • a first substrate with a first cavity is formed on the surface of the piezoelectric layer, the first cavity is opened on one side, and the opening faces the resonance electrode.
  • the first substrate with the first cavity in this embodiment includes a support layer with the first cavity, and a first substrate on the support layer.
  • the first cavity opening faces the first electrode in the resonance electrode.
  • the first electrode is formed during the formation of the first substrate, and the second electrode is formed after the first electrode.
  • a support layer 102 is formed on the first electrode layer 103', and a first cavity 110a penetrating the support layer 102 is formed in the support layer 102.
  • the support layer 102 is formed by physical vapor deposition or chemical vapor deposition.
  • the material of the support layer 102 may be any suitable dielectric material, including but not limited to at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, and the like.
  • the support layer 102 is etched by an etching process to form a first cavity 110a, and the first electrode layer 103' at the bottom is exposed.
  • the etching process may be wet etching or dry etching. Dry etching includes but is not limited to reactive ion etching (RIE), ion beam etching, and plasma etching.
  • RIE reactive ion etching
  • the depth and shape of the first cavity 110a depend on the depth and shape of the cavity required for the bulk acoustic wave resonator to be manufactured, that is, the depth of the first cavity 110a can be determined by forming the thickness of the support layer 102.
  • the shape of the bottom surface of the first cavity 110a may be a rectangle or a polygon other than a rectangle, such as a pentagon, a hexagon, an octagon, etc., and may also be a circle or an ellipse.
  • the method of forming the first substrate with the first cavity is: forming a first sacrificial layer to cover the first electrode layer; forming a first dielectric layer to cover the first sacrificial layer, The first electrode layer; the first sacrificial layer is removed to form a first cavity; the first substrate includes the first dielectric layer.
  • the first electrode layer 103' is patterned to form the first electrode 103, and the first substrate 100 is bonded on the support layer 102.
  • the first substrate 100 and the supporting layer 102 are bonded together through a bonding layer, and the bonding layer includes silicon oxide, silicon nitride, polysilicon, ethyl silicate, or organic cured film.
  • the patterning of the first electrode layer 103' is to form a first trench 130a in the first electrode layer 103' by etching, and the first trench 130a penetrates the first electrode layer 103' and has a semi-annular shape. .
  • the carrier substrate is removed, the second electrode layer 105' is patterned, and the second electrode 105 is formed.
  • the carrier substrate 400 may be removed by mechanical grinding.
  • the second electrode layer 105' is patterned to form a second trench 130b by etching in the second electrode layer 105', and the second trench 130b penetrates the second electrode layer 105' and has a semi-annular shape.
  • the projection of the first groove 130a and the second groove 130b in the direction of the piezoelectric layer is a closed ring.
  • the inside of the ring is the effective resonance area of the resonator.
  • this embodiment further includes: forming a capping layer 200 above the second electrode 105, and forming a second cavity 110 b between the capping layer 200 and the second electrode 105.
  • the capping layer 200 is adhered to the second electrode 105 through the adhesive layer 106.
  • the second cavity 110b is a sealed cavity.
  • the capping layer serves as an effective support for the subsequent manufacturing process, ensuring the mechanical strength of the filter with a cavity structure, matching the process conditions of the grinding and etching processes, and maintaining the pressure balance of the first cavity and the second cavity.
  • a first substrate is formed on the periphery of the first cavity 110a (the first substrate 100 and the support layer 102 in this embodiment jointly constitute the first substrate)
  • the through holes in this embodiment include a first through hole 140 and a second through hole 150.
  • the first through hole 140 extends to the first electrode 103
  • the second through hole 150 extends to the second through hole.
  • the preset temperature is less than or equal to 500°C
  • the preset pressure is less than or equal to 2 standard atmospheric pressures, such as 0°C, 100°C, 200°C, 300°C, and 400°C.
  • the method of forming the first through hole 140 and the second through hole 150 penetrating the first substrate 100 and the supporting layer 103 includes: using the capping layer 200 as a carrier to form the first substrate 100 and the second through hole 150.
  • the first through hole 140 and the second through hole 150 of the support layer 102 are described.
  • a conductive material is formed in the first through hole 140 and the second through hole 150 to electrically connect the first electrode and the second electrode with external signals.
  • a thinning process is performed on the second surface of the first substrate 100.
  • the first substrate is thinned to 60 to 100 microns.
  • a metal plating layer is formed to cover the inner walls of the first through holes 140 and the second through holes 150 and the second surface of the first substrate 100 (the side away from the first cavity); and the metal plating layer is patterned , A conductive layer 109, an inductor 107 and/or at least part of the capacitor 108 are formed. In this embodiment, both ends of the inductor 107 and/or the capacitor 108 are electrically connected to the first electrode 103 and the second electrode 105 through the conductive layer 109, respectively.
  • the method of forming a metal plating layer includes: forming a metal seed layer on the inner wall of the first through hole 140 and the second through hole 150 and the second surface of the first substrate 100.
  • physical vapor deposition is used to form a titanium thin film with a thickness of 1000-3000 angstroms on the inner wall and second surface of the first through hole 140 and the second through hole 150, and 3000 to 3000 angstroms are formed on the surface of the titanium thin film by physical vapor deposition. -5000 Angstroms of copper metal film.
  • the titanium film and the copper film together constitute the seed layer.
  • an electroplating material layer is formed on the surface of the seed layer through an electroplating process.
  • the electroplating material layer in the first through hole 140 and the second through hole 150 can only cover the surface of the seed layer (preserving the shape of the through hole), and the electroplating material layer can also connect the first through hole 140 and the second through hole.
  • the hole 150 is filled.
  • the seed layer and the electroplating material layer together constitute the metal plating layer.
  • the method of forming a metal plating layer includes forming a metal plating layer in the first through hole 140 and the second through hole 150 and on the second surface by using a low-temperature vapor deposition process.
  • the inductor 107 can be formed by patterning the metal plating layer.
  • the capacitor includes a first electrode plate and a second electrode plate arranged in parallel.
  • the first electrode plate is perpendicular to the first substrate, and forming the capacitor includes: patterning the metal plating layer to form a through In the insulating trench of the metal plating layer, an insulating dielectric material is filled in the insulating trench to form the first electrode plate and the second electrode plate that are composed of the metal plating layer and are insulated from each other.
  • the first electrode plate and the second electrode plate of the capacitor are parallel to the surface of the first substrate
  • the method for forming the conductive layer and the inductor and/or the capacitor includes: forming a first metal plating layer, and filling the The first through hole and the second through hole cover the surface of the first substrate, the first metal plating layer is patterned, conductive plugs are formed in the first through hole and the second through hole, and The first plate of the capacitor; a dielectric layer exposing the conductive plug is formed on the first metal plating layer; a second metal plating layer is formed on the dielectric layer, and the second metal plating layer is patterned, The conductive layer connecting the conductive plug and the second electrode plate of the capacitor are formed, and the second metal plating layer is patterned to form the inductor.
  • inductors are formed in both the first metal plating layer and the second metal plating layer, and the inductors in the first metal plating layer and the second metal plating layer may be independent inductors or a whole inductor.
  • the metal plating layer includes a metal seed layer and an electroplating material layer.
  • the metal seed layer is made, the first electrode plate of the capacitor and/or the spiral first sub-inductor of the inductor are formed.
  • an insulating material is provided between the metal seed layer and the electroplating material layer at the position of the capacitor and the inductor, and the first plate and the second There is an insulating material between the two pole plates, and there is an insulating material between the first sub-inductor and the second sub-inductor.
  • the inductor or capacitor is formed in the outer area of the first cavity to prevent the magnetic field formed by the inductor or capacitor from affecting the resonator.
  • the inductor and the capacitor may be located in the area between the two first cavities, away from the effective resonance region of the resonator.
  • This embodiment protects the functional unit devices from damage by using the capping layer as a support at a preset low temperature, through low-temperature grinding, deposition, electroplating, photolithography, or etching, etc., to form a conductive layer on the first substrate.
  • the formation of inductors and/or capacitors does not require additional processes to achieve functional integration, eliminates the need for PCB boards, and also eliminates the high cost of packaging processes, and achieves a reduction in device thickness.
  • first through hole and the second through hole are formed on the side where the capping layer is located.
  • the steps before forming the capping layer 200 are the same as in Embodiment 2.
  • the capping layer is formed, referring to FIG. And the first through hole 140 and the second through hole 150 of the adhesive layer 106, the first through hole 140 extends to the first electrode 103, and the second through hole 150 extends to the second electrode 105.
  • the subsequent process is similar to that of the second embodiment. I won't repeat them here.
  • the supporting base 400 is used as a carrier to form a penetrating first substrate. 100 and the first through hole and the second through hole of the support layer 102, the first through hole 140 extends to the first electrode 103, and the second through hole 150 extends to the second electrode 105. Refer to Example 2 for other steps.
  • the thin film acoustic wave filter formed in this embodiment is a surface acoustic wave filter, and the resonant electrode includes a first interdigital transducer and a second interdigital transducer on the same side of the piezoelectric layer, forming an acoustic wave resonator unit
  • the steps of and through holes include:
  • a second substrate 20 is provided, a piezoelectric layer 104 and a conductive material layer are sequentially formed on the second substrate 20, and the conductive material layer is patterned to form a first interdigital transducer 103A and a second fork Refers to the transducer 105A.
  • a first substrate 10 with a first cavity 110a is formed above the first interdigital transducer 103A and the second interdigital transducer 105A, and a through hole penetrating the first substrate 10 is formed on the second substrate 20 as a carrier ,
  • the through hole includes a first through hole 140 and a second through hole 150, the first through hole 140 extends to the first interdigital transducer 103A, the second through hole 150 extends to the second interdigital transducer 105A, subsequent processes It is similar to Embodiment 2, and will not be repeated here.
  • the embodiment of the present invention overcomes the difficulty of manufacturing matching capacitors and inductors on a device with a cavity and a functional unit (acoustic resonator unit) on the cavity.
  • the manufacturing of the capacitor and the inductor is compatible with the manufacturing of the thin-film acoustic wave filter Process, and use the conductive layer process required for TSV through-hole connection to form all or part of the capacitor/inductance. No additional process is required to achieve functional integration, eliminating the PCB board and the high cost of the packaging process, and Achieve reduction in device thickness.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

La présente invention concerne un filtre à ondes acoustiques à couche mince et son procédé de fabrication. Le filtre à ondes acoustiques à couche mince comprend : un premier substrat comprenant une première surface et une seconde surface disposées à l'opposé l'une de l'autre, la première surface étant pourvue d'une première cavité ; une unité de résonateur à ondes acoustiques disposée sur le premier substrat, recouvrant la première cavité, et comprenant une première électrode, une couche piézoélectrique et une seconde électrode, la première électrode et la seconde électrode étant respectivement disposées sur deux surfaces opposées de la couche piézoélectrique, ou la première électrode et la seconde électrode sont toutes deux disposées sur un côté de la couche piézoélectrique faisant face à la première cavité et sont disposées à l'opposé l'une de l'autre ; un premier trou traversant traversant le premier substrat et s'étendant jusqu'à la première électrode ; un second trou traversant traversant le premier substrat et s'étendant jusqu'à la seconde électrode ; une couche conductrice recouvrant les parois internes du premier trou traversant et du second trou traversant et la seconde surface du premier substrat ; et un inducteur et/ou un condensateur disposé sur un côté de la seconde surface du premier substrat.
PCT/CN2020/135679 2020-06-18 2020-12-11 Filtre à ondes acoustiques à couche mince et son procédé de fabrication WO2021253757A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116073782A (zh) * 2023-03-06 2023-05-05 深圳新声半导体有限公司 一种混合滤波器
CN116436437A (zh) * 2023-06-13 2023-07-14 润芯感知科技(南昌)有限公司 半导体器件及其制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112039472B (zh) * 2020-06-18 2024-04-30 中芯集成电路（宁波）有限公司 一种薄膜声波滤波器及其制造方法
CN114684771A (zh) * 2020-12-25 2022-07-01 中芯集成电路（宁波）有限公司上海分公司 封装结构及其制作方法
CN114955976A (zh) * 2021-02-26 2022-08-30 中芯集成电路（宁波）有限公司上海分公司 一种mems器件及其制作方法
CN114362717B (zh) * 2022-01-11 2023-11-03 武汉敏声新技术有限公司 一种薄膜体声波谐振器及其制备方法
CN114553163B (zh) * 2022-04-28 2022-09-06 深圳新声半导体有限公司 体声波谐振器的制造方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107094001A (zh) * 2016-02-18 2017-08-25 三星电机株式会社 声波谐振器及其制造方法
CN108023564A (zh) * 2016-10-31 2018-05-11 三星电机株式会社 包括体声波谐振器的滤波器及其制造方法
US20180309422A1 (en) * 2016-03-11 2018-10-25 Akoustis, Inc. 5.2 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
CN110113027A (zh) * 2019-05-23 2019-08-09 罕王微电子（辽宁）有限公司 一种薄膜腔声谐振滤波器及制备方法
CN112039472A (zh) * 2020-06-18 2020-12-04 中芯集成电路（宁波）有限公司 一种薄膜声波滤波器及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105322892B (zh) * 2015-05-26 2018-09-18 苏州能讯高能半导体有限公司 一种基于薄膜体声波谐振器谐波调谐放大器
CN107359156B (zh) * 2017-05-31 2020-03-17 中国电子科技集团公司第十三研究所 异质集成的硅基射频微系统结构及其制作方法
CN107508020B (zh) * 2017-09-25 2019-11-29 江苏贝孚德通讯科技股份有限公司 谐振器及椭圆函数型低通滤波器
CN109951171B (zh) * 2019-03-26 2023-09-01 浙江华远微电科技有限公司 薄膜体声波谐振器和滤波器的制备方法
CN110289825B (zh) * 2019-07-29 2024-03-12 苏州汉天下电子有限公司 一种薄膜体声波谐振器及其制造方法、滤波器以及双工器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107094001A (zh) * 2016-02-18 2017-08-25 三星电机株式会社 声波谐振器及其制造方法
US20180309422A1 (en) * 2016-03-11 2018-10-25 Akoustis, Inc. 5.2 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
CN108023564A (zh) * 2016-10-31 2018-05-11 三星电机株式会社 包括体声波谐振器的滤波器及其制造方法
CN110113027A (zh) * 2019-05-23 2019-08-09 罕王微电子（辽宁）有限公司 一种薄膜腔声谐振滤波器及制备方法
CN112039472A (zh) * 2020-06-18 2020-12-04 中芯集成电路（宁波）有限公司 一种薄膜声波滤波器及其制造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116073782A (zh) * 2023-03-06 2023-05-05 深圳新声半导体有限公司 一种混合滤波器
CN116436437A (zh) * 2023-06-13 2023-07-14 润芯感知科技(南昌)有限公司 半导体器件及其制造方法
CN116436437B (zh) * 2023-06-13 2023-10-27 润芯感知科技(南昌)有限公司 半导体器件及其制造方法

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