Classifications

• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/02—Elements
  • C30B29/06—Silicon
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
  • C30B15/10—Crucibles or containers for supporting the melt
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/10—Inorganic compounds or compositions
  • C30B29/36—Carbides
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B35/002—Crucibles or containers

Definitions

• the invention relates to an insulation and a method for producing an insulation for high-temperature applications, in particular for use in a device for producing single crystals, in particular a system for growing crystals.
• the invention further relates to a device for producing single crystals, in particular a system for growing crystals, and a use of a suitable material or material in an insulation for high-temperature applications, in particular for a device for producing single crystals, in particular a system for growing crystals.
• An insulation of the type mentioned at the beginning is sufficiently known from the prior art and is regularly used in a device for producing single crystals, in particular systems for growing crystals.
• such an insulation is made of a felt made of graphite, which due to the aggressive conditions prevailing in a system for crystal growth in which such insulation is used, in particular due to high temperature effects, regularly a relatively short service life or Has service life. So an insulation or a felt previously known from the prior art has to be installed regularly after each operation of a plant for growing crystals which the insulation is used, or after each process of a crystal production, which is not least associated with increased operating costs of a plant for crystal growth.
• the problem is that in inductively heated devices for the production of single crystals or systems for crystal growth the coil of such a coil provided for heating Device or systems for crystal growth generated electromagnetic field not only on a crucible typically made of graphite of such a device or system for crystal growth, but also coupled to the felt regularly arranged between the coil and the crucible, which with additional operating costs of the device or . Plant for crystal growth is connected.
• carbon can be introduced into an ongoing process of crystal production in an uncontrolled manner, which can lead to impurities in a crystal to be produced in the process from, for example, silicon or silicon carbide.
• Another disadvantage of the insulation known from the prior art is that it does not maintain an insulation effect during a process of crystal production, which can regularly last up to a week. Rather, the insulation is increasingly decreasing with regard to the insulation effect, which increases the operating costs of a system for crystal growth in which the insulation is used.
• the present invention is therefore based on the object of an insulation for high-temperature applications, a device for the produc- tion of single crystals, in particular a system for growing crystals an insulation, a use of a suitable material or material in an insulation for high-temperature applications and a method for producing insulation for high-temperature applications to propose, which or which overcomes the disadvantages known from the prior art.
• the insulation according to the invention for high-temperature applications in particular for use in a device for producing single crystals, in particular a system for growing crystals, is at least partially, preferably completely, made of tantalum carbide.
• the invention is based on the idea of forming the insulation at least partially, preferably completely, from tantalum carbide, which is significantly more heat-resistant than graphite and thus due to the aggressive conditions prevailing in a plant for crystal growth in which the insulation is used, especially high temperature effects, is significantly less adversely affected. Consequently, the service life or service life of the insulation according to the invention can be increased considerably, so that the insulation according to the invention can thus be used for a large number of processes of crystal production. It is then no longer necessary to replace the insulation after a single single crystal has been produced.
• the insulation according to the invention also maintains an insulation effect during a process of crystal production, which can regularly last up to a week, or the insulation effect of the insulation does not change during the process or a sequence of processes.
• a device for the production of single crystals in particular a plant for growing crystals, can be operated more cost-effectively with an insulation according to the invention.
• the insulation according to the invention is significantly improved in terms of an insulation effect, so that a system for growing crystals can be operated in a more energy-saving manner with the insulation according to the invention.
• the insulation can be obtained from a fiber body with fibers made of carbon, wherein the carbon can be converted at least partially, preferably completely, into tantalum carbide by means of a chemical gas phase reaction.
• the insulation can then be produced in a particularly simple and cost-effective manner, since the production does not require any additional work steps.
• the insulation is obtained from a fiber body with fibers made of carbon, the fiber body with pyrolytic carbon can be infiltrated, wherein the pyrolytic carbon, after filtering in, can be converted at least partially, preferably completely, into tantalum carbide by means of a chemical gas phase reaction.
• the fibers can be retained in the chemical gas phase reaction, with only the pyrolytic carbon being able to be converted into tantalum carbide in the chemical gas phase reaction, which can then advantageously protect the retained carbon fibers. This makes it possible to design the insulation with a particularly high level of stability.
• the infiltration can advantageously take place by means of a chemical gas phase infiltration (CVI).
• CVI chemical gas phase infiltration
• the pyrolytic carbon can then penetrate into the fiber body and at least partially, preferably completely, fill gaps between the fibers and completely surround the fibers. Nevertheless, it can be provided that only a coating of the fiber body with the pyrolytic carbon is carried out by means of a chemical vapor deposition (CVD), which can lead to the formation of a surface layer from the pyrolytic carbon. Furthermore, it can then be provided that this surface layer is partially or completely converted into tantalum carbide by means of the chemical gas phase reaction.
• CVD chemical vapor deposition
• the carbon is at least partially, preferably completely, converted into tantalum carbide by means of the chemical gas phase reaction.
• the carbon can be partially or completely converted into tantalum carbide together with the pyrolytic carbon, so that the insulation can be partially or completely formed from tantalum carbide.
• the carbon is not converted into tantalum carbide by means of the chemical gas phase reaction.
• the carbon fibers are retained in the chemical gas phase reaction.
• the carbon may be burned out after performing the gas phase chemical reaction by means of a temperature treatment.
• the insulation can then have cavities or hollow fibers, as a result of which an insulation effect of the insulation can additionally be improved.
• the insulation then no longer contains any carbon or graphite, which is introduced into a crystal production process in an uncontrolled manner.
• the insulation no longer contains carbon or graphite also changes the behavior of the insulation in an electromagnetic field to the extent that the electromagnetic field at a different frequency or other frequencies of the electromagnetic field is now completely made of tantalum carbide Isolation coupled.
• the frequency can be selected so that the electromagnetic field hits the crucible coupled, which leads to the formation of eddy currents in the crucible and therefore to a heating of the crucible.
• the electromagnetic field at this frequency is essentially not coupled to the insulation, the formation of eddy currents in the insulation or heating of the insulation is greatly suppressed, so that the plant for growing crystals can be operated in a more energy-saving manner.
• a tantalum halide can expediently be used as the reaction gas in the chemical gas phase reaction.
• tantalum chloride, tantalum iodide, tantalum bromide or tantalum fluoride can be used as the reaction gas.
• the fiber body can then be introduced into a process chamber into which the reaction gas can be introduced.
• the chemical gas phase reaction or a reaction process can then be carried out in this way be controlled that optionally partially or completely the pyrolytic carbon and / or the carbon can be converted or converted into tantalum carbide.
• the fiber body can be formed from a woven fabric, scrim, fleece and / or felt.
• the fibers can consequently be in the form of woven fabrics, scrims, fleece and / or felt.
• the insulation or the fiber body can advantageously be designed with a defined geometric shape.
• the fiber body can be processed before or after the possible infiltration with the pyrolytic carbon or before the chemical gas phase reaction. It is also conceivable to bring the insulation into a desired geometric shape after the chemical gas phase reaction.
• the fiber body or the insulation can be designed with a Zylin derform.
• the device according to the invention for producing single crystals in particular a system for growing crystals, comprises an insulation according to the invention.
• an insulation according to the invention With regard to the advantageous effects of the device according to the invention, reference is made to the description of the advantages of the insulation according to the invention. Further advantageous embodiments of the device emerge from the feature descriptions of the dependent claims referring back to claim 1.
• the device can be designed for the production of single crystals by sublimation of silicon carbide in powder form or for the production of single crystals by crucible pulling of silicon.
• Single crystals from silicon carbide for example, can be produced by sublimation using a PVT (Physical Vapor Transport) process.
• PVT Physical Vapor Transport
• the Production of single crystals by crucible pulling of molten silicon with the Czochralski process or with the Zonenschmelzver drive.
• tantalum carbide is used in insulation for high-temperature applications, in particular for a device for producing single crystals, in particular a system for growing crystals.
• tantalum carbide is proposed as a suitable material or suitable material in insulation for high temperature applications.
• a porous body made of tantalum carbide can also be used for other suitable purposes, for example as
• the insulation is at least partially, preferably completely, made of tantalum carbide.
• the figure shows a system 10 according to the invention for growing crystals, comprising an insulation 11 according to the invention, a graphite formed crucible 12, in which there is a powder 13 made of silicon carbide, and a coil 14 for inductive heating of the crucible 12.
• the insulation 11 is arranged between the coil 14 and the crucible 12.
• the system 10 for crystal growth further comprises a crucible cap 15, on the underside 17 of which a seed crystal 18 is arranged.
• the seed crystal 18 serves as a seed crystal on which a crystal 16 can form.
• the powdery silicon carbide in the crucible 12 is heated to 1500 to 3000 ° C., preferably to 2200 to 2500 ° C., and sublimed or becomes gaseous.
• the gaseous silicon carbide crystallizes on the seed crystal 18 or on the crystal 16.
• the crystal 16 grows until the powder 13 is used up.

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Crystallography & Structural Chemistry (AREA)
• Materials Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Inorganic Chemistry (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)
• Chemical Vapour Deposition (AREA)

Priority Applications (5)

Applications Claiming Priority (1)

Publications (1)

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Family Applications (1)

Country Status (5)

Citations (1)

• 2020
  • 2020-06-08 JP JP2022575241A patent/JP2023534380A/ja active Pending
  • 2020-06-08 CN CN202080101842.XA patent/CN115698390A/zh active Pending
  • 2020-06-08 WO PCT/EP2020/065803 patent/WO2021249613A1/de unknown
  • 2020-06-08 EP EP20734652.9A patent/EP4162101A1/de active Pending
• 2021
  • 2021-06-03 TW TW110120219A patent/TW202200497A/zh unknown

Patent Citations (1)

Non-Patent Citations (3)

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