JP2023534380A - 高温用途のための断熱材 - Google Patents
高温用途のための断熱材 Download PDFInfo
- Publication number
- JP2023534380A JP2023534380A JP2022575241A JP2022575241A JP2023534380A JP 2023534380 A JP2023534380 A JP 2023534380A JP 2022575241 A JP2022575241 A JP 2022575241A JP 2022575241 A JP2022575241 A JP 2022575241A JP 2023534380 A JP2023534380 A JP 2023534380A
- Authority
- JP
- Japan
- Prior art keywords
- insulation
- carbon
- tantalum carbide
- crystal growth
- single crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009413 insulation Methods 0.000 title claims description 67
- 239000013078 crystal Substances 0.000 claims abstract description 74
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910003468 tantalcarbide Inorganic materials 0.000 claims abstract description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 20
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000002296 pyrolytic carbon Substances 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 239000000835 fiber Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 7
- 238000010574 gas phase reaction Methods 0.000 claims description 6
- 238000001764 infiltration Methods 0.000 claims description 6
- 230000008595 infiltration Effects 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 4
- 239000004745 nonwoven fabric Substances 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- -1 tantalum halide Chemical class 0.000 claims description 2
- 239000002759 woven fabric Substances 0.000 claims description 2
- 238000005470 impregnation Methods 0.000 claims 1
- 239000012774 insulation material Substances 0.000 abstract description 3
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 239000012212 insulator Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000005672 electromagnetic field Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZNRKKSGNBIJSRT-UHFFFAOYSA-L dibromotantalum Chemical compound Br[Ta]Br ZNRKKSGNBIJSRT-UHFFFAOYSA-L 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012510 hollow fiber Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- MISXNQITXACHNJ-UHFFFAOYSA-I tantalum(5+);pentaiodide Chemical compound [I-].[I-].[I-].[I-].[I-].[Ta+5] MISXNQITXACHNJ-UHFFFAOYSA-I 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2020/065803 WO2021249613A1 (de) | 2020-06-08 | 2020-06-08 | Isolation für hochtemperaturanwendungen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2023534380A true JP2023534380A (ja) | 2023-08-09 |
Family
ID=71143695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022575241A Pending JP2023534380A (ja) | 2020-06-08 | 2020-06-08 | 高温用途のための断熱材 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4162101A1 (zh) |
| JP (1) | JP2023534380A (zh) |
| CN (1) | CN115698390A (zh) |
| TW (1) | TW202200497A (zh) |
| WO (1) | WO2021249613A1 (zh) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7242987B2 (ja) * | 2018-09-06 | 2023-03-22 | 株式会社レゾナック | ＳｉＣ単結晶製造装置 |
-
2020
- 2020-06-08 WO PCT/EP2020/065803 patent/WO2021249613A1/de unknown
- 2020-06-08 EP EP20734652.9A patent/EP4162101A1/de active Pending
- 2020-06-08 JP JP2022575241A patent/JP2023534380A/ja active Pending
- 2020-06-08 CN CN202080101842.XA patent/CN115698390A/zh active Pending
-
2021
- 2021-06-03 TW TW110120219A patent/TW202200497A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202200497A (zh) | 2022-01-01 |
| CN115698390A (zh) | 2023-02-03 |
| EP4162101A1 (de) | 2023-04-12 |
| WO2021249613A1 (de) | 2021-12-16 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230511 |
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| A977 | Report on retrieval |
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