WO2021249399A1 - 量子点发光二极管及其制作方法、显示面板、显示装置 - Google Patents
量子点发光二极管及其制作方法、显示面板、显示装置 Download PDFInfo
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- 230000015572 biosynthetic process Effects 0.000 claims description 10
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims description 8
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 7
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/166—Electron transporting layers comprising a multilayered structure
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Abstract
Description
Claims (18)
- 一种量子点发光二极管,包括:衬底基板;依次位于所述衬底基板上的第一电极、第一电子传输层、第二电子传输层、量子点发光层、空穴传输层、空穴注入层和第二电极,其中,所述第一电子传输层远离所述第一电极一侧的表面粗糙度小于阈值,所述第二电子传输层由纳米粒子组成。
- 根据权利要求1所述的量子点发光二极管,其中,所述第一电子传输层为以下材料之一形成的膜层:氧化锌、氧化铝锌和氧化镁锌。
- 根据权利要求1或2所述的量子点发光二极管,其中,所述第二电子传输层由以下材料之一的纳米粒子组成:氧化锌、氧化铝锌和氧化镁锌。
- 根据权利要求1所述的量子点发光二极管,其中,所述表面粗糙度的阈值为3nm。
- 根据权利要求1所述的量子点发光二极管,其中,所述第一电子传输层的厚度为50-150nm,所述第二电子传输层的厚度为20-60nm。
- 根据权利要求1所述的量子点发光二极管,其中,所述第一电极为ITO阴极。
- 根据权利要求5所述的量子点发光二极管,其中,第二电极为金属阳极。
- 一种显示面板,包括如权利要求1-7中任一项所述的量子点发光二极管。
- 一种显示装置,包括如权利要求1-7中任一项所述的量子点发光二极管。
- 一种量子点发光二极管的制作方法,包括:提供一衬底基板;在所述衬底基板上依次形成第一电极、第一电子传输层、第二电子传输层、量子点发光层、空穴传输层、空穴注入层和第二电极,其中,所述第一电子传输层远离所述第一电极一侧的表面粗糙度小于阈值,所述第二电子传 输层由纳米粒子组成。
- 根据权利要求10所述的制作方法,其中,采用溶胶-凝胶法、溅射成膜法或气相沉积法在所述第一电极上制备所述第一电子传输层。
- 根据权利要求10所述的制作方法,其中,利用纳米粒子溶液采用旋涂成膜法制备所述第二电子传输层。
- 根据权利要求10-12中任一项所述的制作方法,其中,所述第一电子传输层和所述第二电子传输层由以下材料之一形成:氧化锌、氧化铝锌和氧化镁锌。
- 根据权利要求11所述的制作方法,其中,制备所述第一电子传输层的溶胶的浓度为50mg/ml-150mg/ml。
- 根据权利要求11或14所述的制作方法,其中通过退火温度来调节所述第一电子传输层的载流子迁移率,所述退火温度处在120℃-350℃的范围内。
- 根据权利要求15所述的制作方法,其中通过在320℃的温度下退火30分钟来形成所述第一电子传输层。
- 根据权利要求12所述的制作方法,其中,制备所述第二电子传输层的纳米粒子溶液的浓度为10mg/ml-50mg/ml。
- 根据权利要求17所述的制作方法,其中通过浓度为30mg/ml的纳米粒子溶液形成厚度为45nm的第二电子传输层。
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CN114284461A (zh) * | 2021-12-24 | 2022-04-05 | 合肥福纳科技有限公司 | 一种量子点发光二极管及其制备方法 |
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CN115249775A (zh) * | 2021-04-26 | 2022-10-28 | Tcl科技集团股份有限公司 | 发光器件及其制作方法、显示面板 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160192483A1 (en) * | 2014-12-24 | 2016-06-30 | Samsung Electronics Co., Ltd. | Transparent electrodes and electronic devices including the same |
CN108598273A (zh) * | 2018-05-04 | 2018-09-28 | 华中科技大学 | 基于银纳米线电极的高效柔性量子点发光二极管及其制备 |
CN109713098A (zh) * | 2017-10-26 | 2019-05-03 | 乐金显示有限公司 | 发光二极管以及包括该发光二极管的发光设备 |
CN109755417A (zh) * | 2018-12-29 | 2019-05-14 | 深圳市华星光电半导体显示技术有限公司 | 倒置qled器件的制备方法 |
CN111653678A (zh) * | 2020-06-12 | 2020-09-11 | 京东方科技集团股份有限公司 | 量子点发光二极管及其制作方法、显示面板、显示装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104064690B (zh) * | 2014-06-27 | 2016-08-17 | 北京科技大学 | 具有双层结构电子传输层的有机发光二极管及其制备方法 |
CN105679958B (zh) * | 2016-04-20 | 2018-03-13 | 京东方科技集团股份有限公司 | 电致发光器件及其制作方法、显示装置 |
CN108232023A (zh) * | 2017-06-13 | 2018-06-29 | 苏州大学 | 一种倒置结构量子点发光二极管及其制备方法 |
CN107331781A (zh) * | 2017-06-28 | 2017-11-07 | 河南大学 | 一种量子点发光二极管及制备方法 |
KR102452650B1 (ko) * | 2017-12-19 | 2022-10-06 | 삼성전자주식회사 | 전계 발광 소자, 및 표시 장치 |
KR102452648B1 (ko) * | 2017-12-27 | 2022-10-06 | 삼성전자주식회사 | 전계 발광 소자 및 이를 포함하는 표시 장치 |
KR20190112420A (ko) * | 2018-03-26 | 2019-10-07 | 삼성전자주식회사 | 전계 발광 소자 및 이를 포함하는 표시 장치 |
CN108649131B (zh) * | 2018-05-11 | 2020-11-27 | 京东方科技集团股份有限公司 | 电致发光器件及其制备方法、显示面板及显示装置 |
CN109755405A (zh) * | 2019-02-28 | 2019-05-14 | 京东方科技集团股份有限公司 | 一种电子传输层及其制备方法、发光器件和显示装置 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160192483A1 (en) * | 2014-12-24 | 2016-06-30 | Samsung Electronics Co., Ltd. | Transparent electrodes and electronic devices including the same |
CN109713098A (zh) * | 2017-10-26 | 2019-05-03 | 乐金显示有限公司 | 发光二极管以及包括该发光二极管的发光设备 |
CN108598273A (zh) * | 2018-05-04 | 2018-09-28 | 华中科技大学 | 基于银纳米线电极的高效柔性量子点发光二极管及其制备 |
CN109755417A (zh) * | 2018-12-29 | 2019-05-14 | 深圳市华星光电半导体显示技术有限公司 | 倒置qled器件的制备方法 |
CN111653678A (zh) * | 2020-06-12 | 2020-09-11 | 京东方科技集团股份有限公司 | 量子点发光二极管及其制作方法、显示面板、显示装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114284461A (zh) * | 2021-12-24 | 2022-04-05 | 合肥福纳科技有限公司 | 一种量子点发光二极管及其制备方法 |
CN114284461B (zh) * | 2021-12-24 | 2024-03-19 | 江苏穿越光电科技有限公司 | 一种量子点发光二极管及其制备方法 |
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