WO2021241359A1 - 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 - Google Patents
半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 Download PDFInfo
- Publication number
- WO2021241359A1 WO2021241359A1 PCT/JP2021/018981 JP2021018981W WO2021241359A1 WO 2021241359 A1 WO2021241359 A1 WO 2021241359A1 JP 2021018981 W JP2021018981 W JP 2021018981W WO 2021241359 A1 WO2021241359 A1 WO 2021241359A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- adhesive sheet
- semiconductor device
- adhesive
- lead frame
- manufacturing
- Prior art date
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 147
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 147
- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000012790 adhesive layer Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 53
- 238000007789 sealing Methods 0.000 claims abstract description 44
- 229920005989 resin Polymers 0.000 claims abstract description 39
- 239000011347 resin Substances 0.000 claims abstract description 39
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 27
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 23
- 229920001577 copolymer Polymers 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 239000003822 epoxy resin Substances 0.000 claims abstract description 17
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 17
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 claims abstract description 12
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 11
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 17
- 238000000926 separation method Methods 0.000 abstract description 3
- -1 siloxane compound Chemical class 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 238000012360 testing method Methods 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 229910000881 Cu alloy Inorganic materials 0.000 description 8
- 239000003973 paint Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- MQRMTENGXFRETM-UHFFFAOYSA-N (2-methyl-1h-imidazol-5-yl)methanol Chemical compound CC1=NC=C(CO)N1 MQRMTENGXFRETM-UHFFFAOYSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- APCTZYNYGGYPMN-UHFFFAOYSA-N 3-[[(3-aminophenoxy)methyl-methyl-trimethylsilyloxysilyl]methoxy]aniline Chemical compound C=1C=CC(N)=CC=1OC[Si](C)(O[Si](C)(C)C)COC1=CC=CC(N)=C1 APCTZYNYGGYPMN-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000013036 cure process Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NAKOELLGRBLZOF-UHFFFAOYSA-N phenoxybenzene;pyrrole-2,5-dione Chemical compound O=C1NC(=O)C=C1.O=C1NC(=O)C=C1.C=1C=CC=CC=1OC1=CC=CC=C1 NAKOELLGRBLZOF-UHFFFAOYSA-N 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004447 silicone coating Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J109/00—Adhesives based on homopolymers or copolymers of conjugated diene hydrocarbons
- C09J109/02—Copolymers with acrylonitrile
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to an adhesive sheet preferably used as a mask tape when assembling a semiconductor device by a QFN (Quad Flat Non-lead) method, and a method for manufacturing the semiconductor device using the adhesive sheet.
- QFN Quad Flat Non-lead
- the following method is generally known.
- an adhesive sheet is attached to one surface of the lead frame, and then in the die-attaching process, a semiconductor such as an IC chip is attached to a plurality of semiconductor element mounting portions (die pad portions) formed on the lead frame. Each element is mounted.
- a wire bonding step a plurality of leads arranged along the outer periphery of each semiconductor element mounting portion of the lead frame and the semiconductor element are electrically connected by a bonding wire.
- the sealing step the semiconductor element mounted on the lead frame is sealed with the sealing resin.
- the adhesive sheet is peeled from the lead frame to form a QFN unit in which a plurality of QFN packages are arranged.
- a plurality of QFN packages can be manufactured by dicing the QFN unit along the outer circumference of each QFN package.
- the adhesive which is a polymer material, is liable to be oxidatively deteriorated, and there is a problem that heavy peeling and adhesive residue are liable to occur when the adhesive sheet is peeled from the lead frame.
- the conventionally used adhesive sheet does not sufficiently satisfy the practical level that can be used for a lead frame made of a copper alloy.
- some conventional adhesive sheets have a form in which an adhesive layer containing an acrylonitrile-butadiene copolymer and a bismaleimide resin is laminated on a base material made of a heat-resistant film (see Patent Document 3). ..
- the acrylonitrile-butadiene copolymer in the adhesive layer is liable to deteriorate due to the heat applied in the die attach cure treatment, the wire bonding step, and the resin sealing step after the taping step.
- the peeling step there have been problems that peeling becomes difficult, the adhesive sheet is broken, and adhesive residue is generated.
- the present invention has been made in view of the above circumstances, and prior to the peeling step in the method of assembling the QFN package, the present invention is peeled off from the back surface of the lead frame and the back surface of the sealing resin even if the heat history associated with the QFN assembly is received.
- the adhesive sheet for manufacturing a semiconductor device of the present invention contains a substrate, a carboxyl group-containing acrylonitrile-butadiene copolymer (a), an epoxy resin (b) having the following structural formula (1), and two or more maleimide groups. It is provided with a thermosetting adhesive layer containing the compound (c) and the latent curing agent (d) provided on one surface of the substrate, and is peeled off from the lead frame or wiring substrate of the semiconductor device. It is characterized by being able to be attached.
- the carboxyl group-containing acrylonitrile-butadiene copolymer (a) has a carboxyl group-containing acrylonitrile having an acrylonitrile content of 5 to 50% by mass and a carboxyl group equivalent calculated from a number average molecular weight of 100 to 20000. It is preferably a butadiene copolymer.
- the total is preferably 30 to 300 parts by mass.
- the latent curing agent (d) is preferably a curing agent having a reaction start temperature of 100 ° C. or higher with the epoxy resin.
- the method for manufacturing a semiconductor device of the present invention is as follows.
- the lead frame and the back surface of the sealing resin are sufficiently and stably adhered to and sealed without peeling. It is possible to provide an adhesive sheet that does not leak resin and can be easily peeled off in the peeling step, and does not cause adhesive residue or breakage. According to the present invention, it is possible to further provide a method for manufacturing a semiconductor device using the adhesive sheet of the present invention.
- the adhesive sheet for manufacturing a semiconductor device (hereinafter referred to as an adhesive sheet) of the present invention includes a base material and a thermosetting adhesive layer provided on one surface of the base material.
- the adhesive sheet of the present invention is detachably attached to a lead frame or a wiring substrate of a semiconductor device, and the adhesive layer is a carboxyl group-containing acrylonitrile-butadiene copolymer (a) and has the following structural formula. It contains an epoxy resin (b) having (1), a compound (c) containing two or more maleimide groups, and a latent curing agent (d).
- the adhesive sheet of the present invention is used as a mask tape when assembling a semiconductor device by the QFN method.
- the carboxyl group-containing acrylonitrile-butadiene copolymer (a) (hereinafter, also referred to as component (a)) constituting the adhesive sheet of the present invention has a role of appropriately maintaining the melt viscosity of the adhesive layer at the initial stage of heating. In addition to fulfilling the above, it imparts good flexibility and adhesiveness to the cured adhesive layer.
- the adhesive sheet of the present invention contains this copolymer, it has good adhesion to a substrate made of a heat-resistant film or the like, and can form an adhesive layer without cracks.
- the carboxyl group-containing acrylonitrile-butadiene copolymer (a) known ones can be used without limitation, but those having an acrylonitrile content of 5 to 50% by mass are preferable, and those having an acrylonitrile content of 10 to 40% by mass are more preferable.
- the acrylonitrile content is less than the above range, the solubility in a solvent and the compatibility with other components are lowered, so that the uniformity of the obtained adhesive layer tends to be lowered.
- the acrylonitrile content exceeds the above range, the obtained adhesive layer has excessive adhesiveness to the lead frame and the sealing resin, and when this is used for the adhesive sheet, it becomes difficult to peel it off in the peeling step. Or the adhesive sheet may break.
- the carboxyl group equivalent calculated from the number average molecular weight of the carboxyl group-containing acrylonitrile-butadiene copolymer is preferably in the range of 100 to 20000, and more preferably 200 to 10000. If the carboxyl group equivalent is less than the above range, the reactivity with other components becomes too high, and the storage stability of the obtained adhesive layer tends to decrease. On the other hand, when the carboxyl group equivalent exceeds the above range, the reactivity with other components is insufficient, so that the obtained adhesive layer tends to have a low B stage.
- the compound (c) containing two or more maleimide groups and the epoxy resin (b) (hereinafter, also referred to as the component (b)) is responsible for the thermosetting property of the adhesive layer, and these are used in combination. By doing so, it is possible to form an adhesive layer which is excellent in thermal stability, can be easily peeled off in the peeling step, and does not cause adhesive residue or breakage.
- the epoxy resin (b) imparts toughness to the adhesive layer, the inclusion of the epoxy resin (b) makes it possible to suppress adhesive residue due to cracking of the adhesive layer in the peeling step. ..
- the compound (c) containing two or more maleimide groups (hereinafter, also referred to as the component (c)) imparts thermal stability to the adhesive layer and adjusts the adhesiveness of the adhesive layer. By acting and containing this, the adhesiveness of the adhesive sheet is appropriately controlled, and an adhesive layer that can be easily peeled off in the peeling step can be formed on the surface of the base material.
- Specific examples of the compound (c) containing two or more maleimide groups include compounds constituting the bismaleimide resin, which are of the following formulas (2-1) to (2-3). Above all, the compound represented by the following formula (2-1) or (2-3) is particularly useful in terms of solubility in a solvent.
- the latent curing agent (d) (hereinafter, also referred to as the component (d)) should be taped at a low temperature because the adhesive layer can be adjusted to a lower B stage state by being contained in the adhesive layer. Can be done. Further, in the process of die attach curing or the like, the adhesive is heated at a temperature equal to or higher than the reaction start temperature of the latent curing agent (d) contained therein, so that the curing reaction proceeds quickly and a state of high elastic modulus is obtained. be able to.
- the latent curing agent (d) is a curing agent having a reaction start temperature of 100 ° C. or higher with the epoxy resin.
- latent curing agents examples include 2-phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Chemicals Corporation, trade name: Curesol 2PHZ-PW, reaction start temperature: 150 ° C.), 2-phenyl-4-. Methyl-5-hydroxymethylimidazole (manufactured by Shikoku Chemicals Corporation, trade name: Curesol 2P4MHZ-PW, reaction start temperature: 130 ° C.) and the like can be mentioned.
- the reaction start temperature here is a temperature at which curing heat generation is observed when the temperature is raised by mixing with the epoxy resin. It was measured using DSC (Differential Scanning Calorimetry).
- the content of the latent curing agent (d) is preferably 0.05 to 20 parts by mass, more preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of the carboxyl group-containing acrylonitrile-butadiene copolymer (a). Is. If the content of the latent curing agent (d) is within the above range, the adhesive layer can be adjusted to a lower B stage state, so that taping can be performed at a low temperature, and the adhesive layer can be adhered in a process such as die attach cure. The agent layer can be cured quickly.
- one composed of one kind of compound may be used, or a mixture of two or more kinds of compounds may be used. ..
- the ratio of each component is preferably 30 to 300 parts by mass, preferably 30 to 200 parts by mass in total of the component (b), the component (c) and the component (d) with respect to 100 parts by mass of the component (a). Is more preferable. If the total of the component (b), the component (c) and the component (d) is less than the above range, the reactivity of the adhesive layer is lowered, insolubilization is less likely to proceed even by heating, and the thermal stability is improved. Adhesive strength tends to increase due to the decrease.
- the mass ratio ((c) / (b)) of the component (c) to the component (b) is preferably in the range of 0.1 to 10. If it is less than the above range, the obtained adhesive layer tends to undergo a curing reaction at room temperature and storage stability becomes poor, or the adhesive strength becomes too strong and the adhesive sheet using this cannot be peeled off in the peeling step. There is a risk of becoming or breaking. On the other hand, if it exceeds the above range, the adhesiveness between the adhesive layer and the base material made of the heat-resistant film may be deteriorated at the time of manufacturing the adhesive sheet, or the adhesive layer may be foamed, or the obtained adhesive sheet may be obtained. Tends to leave adhesive residue easily.
- the adhesive layer in the adhesive sheet for manufacturing a semiconductor device of the present invention may further contain a reactive siloxane compound.
- the reactive siloxane compound is intended to enhance the compatibility of each component constituting the adhesive layer and to improve the peelability of the adhesive layer from the sealing resin.
- each component in the adhesive layer is well compatible with each other, and a uniform adhesive layer without inconvenience such as separation and precipitation of the components can be formed.
- the adhesive strength of the adhesive layer becomes more uniform, and it is possible to suppress inconveniences such as deterioration of peelability and adhesive residue due to partial increase or decrease in adhesive strength.
- a siloxane compound to which reactivity is imparted by a reactive group such as amino-modified, epoxy-modified, carboxyl-modified, or mercapto-modified can be used without limitation.
- a reactive group such as amino-modified, epoxy-modified, carboxyl-modified, or mercapto-modified
- 1,3-bis (3-aminopropyl) tetramethyldisiloxane, aminopropyl-terminated dimethylsiloxane tetramer or octamer, and bis (3-aminophenoxymethyl) tetramethyldisiloxane are (b). ) And the reaction with the component (c) proceed rapidly, which is preferable.
- the reactive siloxane compound it is preferable to use a compound in which reactive groups are bonded to both ends of the siloxane structure from the viewpoint of reactivity, but one at one end or one at one end is reactive and the other is Non-reactive silane coupling agents can also be used.
- the ratio of the number of reactive siloxane compounds to the total number of epoxy groups of the component (b) and the number of maleimide groups of the component (c) is 0.05 to 1. It is preferably 2, more preferably 0.1 to 0.8. If it is less than the above range, the reactivity of the adhesive layer as a whole is lowered, and it becomes difficult for the curing reaction to proceed by the die attach cure treatment or the like, and as a result, the adhesive strength may become too strong. On the other hand, if it exceeds the above range, the reaction proceeds excessively, problems such as gelation are likely to occur at the time of preparing the adhesive layer, and the adhesive strength is likely to be weakened.
- reaction promoters such as organic peroxides and triphenylphosphine are added to the adhesive layer as long as they do not affect the adhesiveness of the adhesive layer. May be. By adding these, it is possible to control the state of the adhesive layer at room temperature to a good B stage. Further, a filler having an average particle size of 1 ⁇ m or less may be added to the adhesive layer for the purpose of controlling the melt viscosity, improving the thermal conductivity, and imparting flame retardancy.
- the filler examples include inorganic fillers such as silica, alumina, magnesia, aluminum nitride, boron nitride, titanium oxide, calcium carbonate and aluminum hydroxide, and organic fillers such as silicone resin and fluororesin.
- inorganic fillers such as silica, alumina, magnesia, aluminum nitride, boron nitride, titanium oxide, calcium carbonate and aluminum hydroxide
- organic fillers such as silicone resin and fluororesin.
- its content is preferably 1 to 40% by mass in the adhesive layer.
- the adhesive sheet of the present invention has the above-mentioned adhesive layer formed on one side of a heat-resistant film as a base material.
- a carboxyl group-containing acrylonitrile-butadiene copolymer
- b epoxy resin having the structural formula (1)
- two or more maleimide groups are used.
- An adhesive coating material comprising the compound (c), the latent curing agent (d) and the solvent contained therein is prepared. Then, this paint may be applied to one side of the heat-resistant film so that the thickness of the adhesive layer after drying is preferably 1 to 50 ⁇ m, more preferably 3 to 20 ⁇ m, and dried.
- an adhesive sheet may be produced by forming an agent layer and providing a heat-resistant film on the agent layer. The protective film is peeled off when the adhesive sheet is used.
- the heat-resistant film examples include a heat-resistant plastic film made of polyimide, polyphenylene sulfide, polyether sulfone, polyether ether ketone, liquid crystal polymer, polyethylene terephthalate, polyethylene naphthalate, etc., and a composite heat-resistant film such as epoxy resin-glass cloth.
- a polyimide film is particularly preferable.
- the thickness of the polyimide film is preferably 12.5 to 125 ⁇ m, more preferably 25 to 50 ⁇ m. If it is less than the above range, the adhesive sheet tends to be insufficiently stiff and difficult to handle, and if it exceeds the above range, it tends to be difficult to work in the taping step and the peeling step at the time of QFN assembly.
- the solvent used for the adhesive paint one or more of hydrocarbons, alcohols, ketones, organic solvents such as ethers (tetrahydrofuran, etc.), water and the like can be preferably used, and the amount used is the paint. It may be appropriately adjusted so that the viscosity becomes appropriate. Further, the properties of the paint may be any of a solution, an emulsion and a suspension, and may be appropriately selected depending on the coating device to be used, environmental conditions and the like.
- peelable protective film examples include plastic films such as polyethylene, polypropylene, vinyl chloride, fluororesin, and silicone, and polyethylene terephthalate, polyethylene naphthalate, and paper with peelability imparted by silicone coating or the like.
- the method for manufacturing a semiconductor device using the adhesive sheet of the present invention is a bonding step of attaching an adhesive sheet to a lead frame or a wiring board; a die-attaching process of mounting a semiconductor element on a lead frame or a wiring board; a semiconductor element and an external device. It includes a wire bonding step of conducting a connection terminal; a sealing step of sealing a semiconductor element with a sealing resin; and a peeling step of peeling an adhesive sheet from a lead frame or a wiring substrate after the sealing step.
- FIG. 1 is a plan view of a lead frame seen from the side where a semiconductor element is mounted
- FIGS. 2A to 2F are process diagrams showing a method of manufacturing a QFN package using the lead frame shown in FIG. , A'A'cross-sectional view of the lead frame of FIG.
- a lead frame 20 having a schematic configuration shown in FIG. 1 is prepared.
- a plurality of semiconductor element mounting portions (die pad portions) 21 on which semiconductor elements such as IC chips are mounted are formed in a matrix, and a large number of leads 22 (external connection) are formed along the outer periphery of each semiconductor element mounting portion 21. Terminals) are formed.
- the material of the lead frame 20 include conventionally known materials, for example, a copper plate and a copper alloy plate, those provided with strike plating on these, or a nickel plating layer and a palladium plating layer on the surface of the copper alloy plate. Examples thereof include those in which the gold-plated layers are provided in this order.
- the adhesive sheet 10 is attached to one surface (lower surface) of the lead frame 20 so that the adhesive layer (not shown) abuts on the lead frame 20 (adhesion step).
- a laminating method capable of continuously performing the taping step is preferable.
- the temperature of the adhesive sheet 10 in this step is, for example, from normal temperature (5 to 35 ° C.) to 150 ° C., more preferably 60 to 120 ° C. If the lead frame is attached at a temperature higher than 150 ° C., the lead frame tends to warp. If the lead frame 20 is warped in this process, positioning in the die-attaching process or the wire bonding process becomes difficult, and transportation to the heating furnace becomes difficult, which may reduce the productivity of the QFN package. ..
- a semiconductor element 30 such as an IC chip is placed on the side of the lead frame 20 where the adhesive sheet 10 is not attached in the semiconductor element mounting portion 21 via a die attachant (not shown). ..
- the lead frame 20 is easily positioned because the warp is suppressed.
- the semiconductor element 30 is accurately placed at a predetermined position. After that, it is heated to about 100 to 200 ° C. to cure the die attachant, and the semiconductor element 30 is fixedly mounted on the semiconductor element mounting portion 21 (diatack agent curing process. The above is the die attach step).
- the adhesive layer of the adhesive sheet 10 is cured and adhered to the lead frame.
- the lead frame 20 and the semiconductor element 30 are subjected to plasma treatment (plasma cleaning step).
- plasma treatment for example, the lead frame 20 (hereinafter, may be referred to as a work-in-progress product) to which the adhesive sheet 10 is attached and the semiconductor element 30 is mounted is subjected to argon gas, a mixed gas of argon gas and hydrogen gas, or the like.
- argon gas a mixed gas of argon gas and hydrogen gas, or the like.
- a method of irradiating plasma in an atmosphere can be mentioned.
- the irradiation output of plasma in the plasma processing is, for example, 150 to 600 W.
- the plasma processing time is, for example, 0.1 to 15 minutes.
- the semiconductor element 30 and the lead 22 (external connection terminal) of the lead frame 20 are electrically conducted by a bonding wire 31 such as a gold wire, a copper wire, or a copper wire coated with palladium (wire). Bonding process).
- This step is performed while heating the work-in-process on the heater block to about 150 to 250 ° C.
- the heating time in this step is, for example, 5 to 60 minutes.
- the work-in-process shown in FIG. 2C is placed in a mold, and is injected and filled in the mold using a sealing resin (molding material). After filling the mold with an arbitrary amount, the semiconductor element 30 is sealed with the sealing resin 40 by maintaining the inside of the mold with an arbitrary pressure (sealing step).
- the sealing resin conventionally known ones are used, and examples thereof include a mixture of an epoxy resin and an inorganic filler.
- the adhesive sheet 10 is peeled from the sealing resin 40 and the lead frame 20 to obtain a QFN unit 60 in which a plurality of QFN packages 50 are arranged (peeling step).
- a plurality of QFN packages 50 are obtained by dicing the QFN unit 60 along the outer circumference of each QFN package 50 (dicing step).
- a method of manufacturing a QFN package using a lead frame has been described as an example, but the present invention is not limited to this, and a method of manufacturing a semiconductor device other than a QFN package using a lead frame, It can also be applied to a method for manufacturing a semiconductor device using a wiring board.
- the adhesive layer in the adhesive sheet of the present invention takes a B stage state (semi-cured state) by cross-linking the carboxyl group of the carboxyl group-containing acrylonitrile-butadiene copolymer (a) and the glycidyl group of the epoxy resin (b).
- An adhesive sheet having an adhesive layer having a low glass transition temperature can be continuously taped by a roll laminator or the like at a relatively low temperature heating condition, specifically 60 to 150 ° C., and is excellent in productivity.
- the adhesive layer having a low glass transition temperature (-30 ° C to 50 ° C) in the adhesive sheet of the present invention can obtain the property of high elastic modulus when heated.
- products bonded with low-cost copper wire or palladium-coated copper wire have begun to spread in place of the conventional gold wire for the purpose of cost reduction in the wire bonding process.
- copper wire or palladium-coated copper wire is a metal with higher elasticity than gold, it is necessary to process it with a higher load than conventional gold wire in order to form a stable shape.
- the adhesive layer in the adhesive sheet attached to the lower part of the lead frame has a low elastic modulus, the adhesive layer is deformed and the deformed adhesive layer is formed.
- the adhesive sheet of the present invention has the characteristics of high elasticity as described above, even if wire bonding is performed using a copper wire or a copper wire coated with palladium, wire bonding failure or sealing occurs. The problem of leakage of the waterproof resin and residual adhesive layer is unlikely to occur.
- the adhesive layer in the adhesive sheet of the present invention contains the compound (c) containing two or more maleimide groups, the curing of the adhesive layer should be appropriately controlled during the drying process during the production of the adhesive sheet.
- the adhesive layer can be in a high B stage state, so that the adhesive strength to the lead frame is suppressed from being increased, and as a result, the sealing resin leaks and the adhesive remains on the lead frame. And it is possible to suppress the breakage of the adhesive layer at the time of peeling.
- Example 1 to 4 and Comparative Examples 1 to 3 Composition of adhesive paint
- the adhesive coating material was prepared by mixing the components (a) to (d) and other components with a solvent, tetrahydrofuran (THF), at the mass ratios shown in Table 1. Then, this adhesive paint was applied to one side of a polyimide film (manufactured by Toray Industries, Inc., trade name: Kapton 100EN) having a thickness of 25 ⁇ m so that the thickness of the adhesive layer after drying was 5 ⁇ m, and then the temperature was set to 80 ° C. It was dried in a hot air circulation type oven to obtain an adhesive sheet.
- the details of each component used are as follows.
- Carboxyl group-containing acrylonitrile-butadiene copolymer Carboxyl group equivalent 1500 calculated from number average molecular weight, acrylonitrile content 27% by mass
- Epoxy resin having structural formula (1) molecular weight 630, functional group equivalent 210 g / eq Bisphenol A diphenyl ether bismaleimide: molecular weight 570, functional group equivalent 285 g / eq -2-Phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Chemicals Corporation, trade name: Curesol 2PHZ-PW, reaction start temperature: 150 ° C.) 2-Phenyl-4-methyl-5-hydroxymethylimidazole (manufactured by Shikoku Chemicals Corporation, trade name: Curesol 2P4MHZ-PW, reaction start temperature: 130 ° C.) 2-Ethyl-4-methyl-imidazole (manufactured by Shikoku Chemicals Corporation, trade name: Curesol 2E4
- Measurement was performed using a Vibron measuring device (RHEOVIBRONDDV-II-EP manufactured by Orientec Co., Ltd.) as DMA at a frequency of 11 Hz, a heating rate of 10 ° C./min, and a load of 1.0 gf.
- A was defined as having a tensile storage elastic modulus of 6 MPa or more at 200 ° C., which is the temperature applied during the wire bonding step, and X was designated as having a tensile storage elastic modulus of less than 6 MPa at 200 ° C.
- the adhesive sheet obtained in each example is cut into a width of 50 mm ⁇ a length of 60 mm, and this is cut into a test lead frame (surface strike plating, surface strike plating) made of a copper alloy having an outer dimension of 57.5 mm ⁇ 53.5 mm of 50 mm ⁇ 100 mm. It was attached to an 8 ⁇ 8 matrix array, package size 5 mm ⁇ 5 mm, 32 pins) using a roll laminator.
- the laminating conditions at that time were a temperature of 80 ° C., a pressure of 4 N / cm, and a crimping speed of 0.5 m / min.
- the sealing resin was laminated (resin sealing step).
- an epoxy mold resin (EME-G631BQ) manufactured by Sumitomo Bakelite Co., Ltd. was used.
- the peel strength is 1000 gf / 50 mm or more, the peeled adhesive sheet is not broken, and no adhesive remains on the surface of the lead frame material and the surface of the sealing resin.
- X Corresponds to at least one of whether the adhesive sheet is broken or the adhesive remains on the surface of the lead frame material and the surface of the sealing resin.
- the adhesive sheets of Examples 1 to 4 have a peel strength against a Cu plate, an elastic modulus after heating, a peel strength against a test piece after a resin sealing step, and an adhesive after tape peeling. In all the evaluations regarding the presence or absence of residue, there was no problem in practical use.
- the adhesive sheets of Comparative Example 1 and Comparative Example 2 were adhesive tapes having low adhesive strength to the Cu plate and easily leaking the sealing resin.
- the adhesive sheet of Comparative Example 3 is an adhesive tape having a low elastic coefficient after heating and is prone to wire connection failure in wire bonding of copper wires, and is evaluated for peeling strength of a test piece after a resin sealing step. , It was firmly adhered to the test lead frame made of copper alloy, and had a problem that the adhesive sheet was torn.
- the adhesive sheet for manufacturing a semiconductor device of the present invention can be suitably used as a method for assembling a QFN package by the QFN method.
- the adhesive sheet can be easily peeled off in the peeling step in the QFN assembly, and the adhesive does not leave adhesive residue on the adhesive sheet, and the adhesive is bonded. Does not cause the sheet to break.
- Adhesive sheet for manufacturing semiconductor devices 20 Lead frame 30 Semiconductor element 31 Bonding wire 40 Encapsulating resin 50 QFN package
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
Description
この要求に応えるCSP(Chip Size Package)技術として、QFN方式が注目され(特許文献1および特許文献2参照。)、特に100ピン以下の少ピンタイプの半導体装置の製造においては広く採用されている。
その後、剥離工程において、接着シートをリードフレームから剥離することにより、複数のQFNパッケージが配列されたQFNユニットを形成することができる。最後に、ダイシング工程において、このQFNユニットを各QFNパッケージの外周に沿ってダイシングすることにより、複数のQFNパッケージを製造できる。
特に近年は、半導体装置のコスト低減のために銅合金からなるリードフレームが使用されるようになっている。このような銅合金からなるリードフレームに対して接着シートを使用する場合には、リードフレームを構成する遷移金属である銅の、高分子材料に対する酸化劣化の触媒作用に起因して、テーピング工程後のQFNパッケージ組み立てに伴う熱履歴により高分子材料である接着剤が酸化劣化されやすく、リードフレームからの接着シート剥離時に重剥離及び糊残りしやすくなるという問題を呈する。
例えば、従来の接着シートには、耐熱性フィルムからなる基材に、アクリロニトリル-ブタジエン共重合体とビスマレイミド樹脂とを含有する接着剤層が積層した形態のものがある(特許文献3参照。)。このような接着シートを使用した場合、テーピング工程後のダイアタッチキュア処理、ワイヤボンディング工程、及び樹脂封止工程で加えられる熱により、接着剤層中のアクリロニトリル-ブタジエン共重合体が劣化しやすく、剥離工程において、剥離困難となったり、接着シートが破断したり、糊残りが生じる、という問題が生じていた。
更に前記潜在型硬化剤(d)はエポキシ樹脂との反応開始温度が100℃以上の硬化剤であることが好ましい。
また、本発明の半導体装置の製造方法は、
リードフレーム又は配線基板に、本発明の半導体装置製造用接着シートを貼着する貼着工程;
前記リードフレーム又は配線基板に半導体素子を搭載するダイアタッチ工程;
前記半導体素子及び外部接続端子を導通させるワイヤボンディング工程;
前記半導体素子を封止樹脂で封止する封止工程;並びに
前記封止工程の後、半導体装置製造用接着シートをリードフレーム又は配線基板から剥離する剥離工程;を備えることを特徴とする。
[半導体装置製造用接着シート]
本発明の半導体装置製造用接着シート(以下、接着シートという)は、基材、及び該基材の一方の面に設けられた熱硬化型の接着剤層を備えている。本発明の接着シートは、半導体装置のリードフレーム又は配線基板に剥離可能に貼着されるものであり、前記接着剤層は、カルボキシル基含有アクリロニトリル-ブタジエン共重合体(a)と、下記構造式(1)を有するエポキシ樹脂(b)と、マレイミド基を2個以上含有する化合物(c)と、潜在型硬化剤(d)とを含有するものである。本発明の接着シートは、QFN方式により半導体装置を組み立てる際にマスクテープとして使用される。
なお、数平均分子量から算出されるカルボキシル基当量とは、数平均分子量(Mn)を1分子当たりのカルボキシル基数(官能基数)で除したものであって、下記式で示される。
カルボキシル基当量=Mn/官能基数
マレイミド基を2個以上含有する化合物(c)の具体例としては、ビスマレイミド樹脂を構成する化合物が好ましく使用され、下記式(2-1)~(2-3)のものなどが挙げられるが、中でも特に下記式(2-1)または(2-3)で示される化合物が溶媒に対する溶解性の点で有用である。
潜在型硬化剤(d)は、エポキシ樹脂との反応開始温度が100℃以上の硬化剤をいう。このような潜在型硬化剤としては、2-フェニル-4,5-ジヒドロキシメチルイミダゾール(四国化成工業社製、商品名:キュアゾール 2PHZ-PW、反応開始温度:150℃)、2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾール(四国化成工業社製、商品名:キュアゾール 2P4MHZ-PW、反応開始温度:130℃)などを挙げることができる。ここにおける反応開始温度とは、エポキシ樹脂と混ぜ合わせ、昇温した時に、硬化発熱がみられた温度である。DSC(示差走査熱量測定)を用いて測定した。
潜在型硬化剤(d)の含有量は、カルボキシル基含有アクリロニトリル-ブタジエン共重合体(a)100質量部に対して0.05~20質量部が好ましく、より好ましくは0.1~10質量部である。潜在型硬化剤(d)の含有量が、上記範囲であれば接着剤層をより低Bステージ状態に調整できるため、低温でテーピングすることができ、なおかつ、ダイアタッチキュアなどの工程で、接着剤層を素早く硬化させることができる。
さらに、溶融粘度のコントロール、熱伝導性向上、難燃性付与などの目的のために、平均粒径1μm以下のフィラーを、接着剤層に添加してもよい。フィラーとしては、シリカ、アルミナ、マグネシア、窒化アルミニウム、窒化ホウ素、酸化チタン、炭酸カルシウム、水酸化アルミニウム等の無機フィラー、シリコーン樹脂、フッ素樹脂等の有機フィラーなどが挙げられる。フィラーを使用する場合には、その含有量は、接着剤層中、1~40質量%とすることが好ましい。
このような接着シートを製造する場合には、まず、少なくとも上述のカルボキシル基含有アクリロニトリル-ブタジエン共重合体(a)、前記構造式(1)を有するエポキシ樹脂(b)、マレイミド基を2個以上含有する化合物(c)、潜在型硬化剤(d)及び溶媒からなる接着剤塗料を調製する。ついで、この塗料を耐熱性フィルムの片面に、乾燥後の接着剤層の厚さが好ましくは1~50μm、より好ましくは3~20μmになるように塗布し、乾燥すればよい。また、接着剤層の保護のために、形成された接着剤層上には、さらに剥離性の保護フィルムを設けることが好ましく、その場合には、保護フィルム上に塗料を塗布、乾燥して接着剤層を形成し、その上に耐熱性フィルムを設ける方法で接着シートを製造してもよい。なお、保護フィルムは、接着シートの使用時には剥離されるものである。
ポリイミドフィルムの厚さは、12.5~125μmが好ましく、より好ましくは25~50μmである。上記範囲未満であると、接着シートのコシが不充分になって扱い難くなる傾向があり、上記範囲を超えると、QFN組み立て時のテーピング工程や剥離工程での作業が困難になる傾向がある。
本発明の接着シートを用いた半導体装置の製造方法は、リードフレーム又は配線基板に接着シートを貼着する貼着工程;リードフレーム又は配線基板に半導体素子を搭載するダイアタッチ工程;半導体素子及び外部接続端子を導通させるワイヤボンディング工程;半導体素子を封止樹脂で封止する封止工程;並びに封止工程の後、接着シートをリードフレーム又は配線基板から剥離する剥離工程;を備えるものである。
リードフレーム20の材質としては、従来公知のものが挙げられ、例えば、銅板及び銅合金板、またはこれらにストライクメッキを設けたもの、や銅合金板の表面に、ニッケルメッキ層とパラジウムメッキ層と金メッキ層とがこの順に設けられたものが挙げられる。
本工程でリードフレーム20に反りが生じると、ダイアタッチ工程やワイヤボンディング工程での位置決めが困難になることや、加熱炉への搬送が困難になり、QFNパッケージの生産性を低下させるおそれがある。
ワイヤボンディング工程で仕掛品が加熱されると、接着剤層中にフッ素添加剤が含有されている場合は、フッ素添加剤が接着剤層の表面に移行するため、後述の剥離工程において接着シート10は、リードフレーム20及び封止樹脂40から剥離しやすくなる。
図2Eに示すように、接着シート10を封止樹脂40及びリードフレーム20から剥離することにより、複数のQFNパッケージ50が配列されたQFNユニット60を得る(剥離工程)。
このような大きな荷重をリードフレームに加えると、リードフレーム下部に貼着されている接着シートにおける接着剤層が低弾性率であると、該接着剤層が変形しその変形された接着剤層の状態で樹脂封止される。そうすると、変形された接着剤層部分から封止樹脂の漏れが発生する。また、リードフレームから接着シートを剥離する際には、該変形された接着剤層部分から接着剤層が破断してリードフレーム表面上に接着剤が残留するという問題も生じる。加えて、ワイヤボンディング時に、接着剤が低弾性率であると、接着剤が変形してしまうことで、ワイヤ荷重が伝わりにくく、ワイヤボンディング不良も起こりやすくなる。本発明の接着シートにおける接着剤層は、上記のように高弾性率の特性を有するため、銅ワイヤまたは、パラジウム被覆された銅ワイヤを用いて、ワイヤボンディングしても、ワイヤボンディング不良や、封止樹脂の漏れや接着剤層の残留の問題が生じにくい。
[実施例1~4および比較例1~3]
(接着剤塗料の組成)
表1に示す質量比率で、(a)~(d)成分及びその他の成分と溶媒であるテトラヒドロフラン(THF)とを混合して、接着剤塗料を調製した。
ついで、この接着剤塗料を厚さ25μmのポリイミドフィルム(東レ・デュポン社製、商品名カプトン100EN)の片面に、乾燥後の接着剤層厚さが5μmとなるよう塗布後、80℃に設定した熱風循環型オーブン中で乾燥し、接着シートを得た。
なお、使用した各成分の詳細は以下の通りである。
・構造式(1)を有するエポキシ樹脂:分子量630、官能基当量210g/eq
・ビスフェノールAジフェニルエーテルビスマレイミド:分子量570、官能基当量285g/eq
・2-フェニル-4,5-ジヒドロキシメチルイミダゾール(四国化成工業社製、商品名:キュアゾール 2PHZ-PW、反応開始温度:150℃)
・2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾール(四国化成工業社製、商品名:キュアゾール 2P4MHZ-PW、反応開始温度:130℃)
・2-エチル-4-メチル-イミダゾール(四国化成工業社製、商品名:キュアゾール 2E4MZ、反応開始温度:90℃)
・2-ウンデシルイミダゾール(四国化成工業社製、商品名:キュアゾール C11Z、反応開始温度:90℃)
被着体:銅板(古河製125μm64タイプ)
接着シートサイズ:幅10mm×長さ50mm
加工:ロールラミネータを使用し、各例で得られた接着シートを被着体へ貼り付けたものを、試験体とした。その際のラミネート条件は、温度80℃、圧力4N/cm、圧着速度0.5m/分とした。
保存:上記で加工した接着シートを次の2つの条件で保存し、それぞれの保存後の接着シートにおける剥離強度の測定及び評価を行った。
<条件1>
上記で加工した接着シートを60℃に設定した恒温槽に120時間保存した。
<条件2>
上記で加工した接着シートを60℃に設定した恒温槽に120時間保存した後、更に40℃に設定した恒温槽に1週間保存した。
測定:万能引張試験機を使用して、試験体の90°ピール強度を常温で測定した。銅板を固定し、接着シートを垂直方向に引っ張って測定した。引張速度は50mm/分とした。
評価:剥離強度は、ラミネートでテーピングした時の量産性を考慮すると実用上15gf/cm以上が問題ない接着強度である。15gf/cm以上をAとし、15gf/cm未満をXとした。
加工:前記で得られた各例の接着剤塗料を厚さ38μmの離型処理を施したポリエチレンテレフタレートフィルム(PETフィルム)の片面に、乾燥後の接着剤層厚さが5μmとなるよう塗布後乾燥し接着シートを得た。次に該接着シートを、ダイアタッチキュア処理を想定し、通風オーブンを使用して175℃で60分間加熱した。
測定:加熱後の接着シートにおける接着剤層をPETフィルムから剥離し、引張貯蔵弾性率をDMA(DynamicMechanicalAnalyzer)を用いて測定した。DMAとしてバイブロン測定器(オリエンテック社製、RHEOVIBRONDDV-II-EP)を用いて、周波数11Hz、昇温速度10℃/min、荷重1.0gfにて測定を行った。
評価:ワイヤボンディング工程時を想定した際にかかる温度、200℃における引張貯蔵弾性率が6MPa以上のものをAとし、200℃における引張貯蔵弾性率が6MPa未満のものをXとした。
加工・測定方法:
(i)試験体の作製と熱処理
各例で得られたポリイミドフィルム上に接着剤層を有する接着シートを幅50mm×長さ60mmに裁断した後、実際のQFNの組み立てに伴う熱履歴などを想定して、まず、下記の(a)~(d)を順次実施した。
(a)各例で得られた接着シートを幅50mm×長さ60mmに裁断し、これを50mm×100mmの外寸57.5mm×53.5mm銅合金製のテスト用リードフレーム(表面ストライクメッキ、8×8個のマトリクス配列、パッケージサイズ5mm×5mm、32ピン)に、ロールラミネータを使用して貼り付けた。その際のラミネート条件は、温度80℃、圧力4N/cm、圧着速度0.5m/分とした。
(b)接着シートが貼着された銅合金製のテスト用リードフレームを通風オーブンで175℃/60分間加熱した。これは、ダイアタッチキュア処理を想定した処理である。
(c)プラズマ照射処理:Yieldエンジニアリング社製1000Pにより、ガス種にArを使用して、450W/60秒間処理した。
(d)200℃/30分加熱:ワイヤボンディング工程を想定した処理であって、ホットプレートを使用して加熱した。
ついで、(a)~(d)の熱処理が済んだ被着体の接着シートが貼り合わされた面とは逆の銅材露出面に、モールドプレス機を用いて、175℃/3分の条件で封止樹脂を積層した(樹脂封止工程)。封止樹脂としては住友ベークライト社製のエポキシモールド樹脂(EME-G631BQ)を使用した。
上述の樹脂封止工程後の試験体について、万能引張試験機を使用して、90°ピール強度を常温で測定した。なお、試験体を固定し、接着シートのコーナー部分を垂直方向に引っ張って測定した。引張速度は300mm/分とした。また、テープ剥離後の接着剤残留物の有無を、光学顕微鏡(キーエンス社製デジタルマイクロスコープVHX-500)を用いて、倍率100倍で確認した。
評価:
A:剥離強度が1000gf/50mm未満であって、剥離した接着シートが破断しておらず、リードフレーム材表面および封止樹脂表面に接着剤が残留していない。
B:剥離強度が1000gf/50mm以上であって、剥離した接着シートが破断しておらず、リードフレーム材表面および封止樹脂表面に接着剤が残留していない。
X:接着シートの破断が認められるか、リードフレーム材表面および封止樹脂表面に接着剤の残留が認められるかのいずれか少なくとも1つに該当する。
これに対して、比較例1及び比較例2の接着シートは、Cu板に対する接着強度が低く封止樹脂の漏れが生じやすい接着テープであった。また、比較例3の接着シートは、加熱後の弾性率が低く、銅ワイヤーにおけるワイヤボンディングにおいてワイヤ接続不良が生じやすい接着テープであり、且つ樹脂封止工程後の試験体に対する剥離強度の評価において、銅合金製のテスト用リードフレームに強固に接着されており、接着シートが裂けるという問題を有していた。
20 リードフレーム
30 半導体素子
31 ボンディングワイヤ
40 封止樹脂
50 QFNパッケージ
Claims (5)
- 前記カルボキシル基含有アクリロニトリル-ブタジエン共重合体(a)は、アクリロニトリル含有量が5~50質量%で、かつ、数平均分子量から算出されるカルボキシル基当量が100~20000のカルボキシル基含有アクリロニトリル-ブタジエン共重合体であることを特徴とする請求項1に記載の半導体装置製造用接着シート。
- 前記カルボキシル基含有アクリロニトリル-ブタジエン共重合体(a)100質量部に対し、前記エポキシ樹脂(b)、前記マレイミド基を2個以上含有する化合物(c)、及び前記潜在型硬化剤(d)の合計が30~300質量部であることを特徴とする請求項1に記載の半導体装置製造用接着シート。
- 前記潜在型硬化剤(d)はエポキシ樹脂との反応開始温度が100℃以上の硬化剤である、請求項1に記載の半導体装置製造用接着シート。
- リードフレーム又は配線基板に、請求項1に記載の半導体装置製造用接着シートを貼着する貼着工程;
前記リードフレーム又は配線基板に半導体素子を搭載するダイアタッチ工程;
前記半導体素子及び外部接続端子を導通させるワイヤボンディング工程;
前記半導体素子を封止樹脂で封止する封止工程;並びに
前記封止工程の後、半導体装置製造用接着シートをリードフレーム又は配線基板から剥離する剥離工程;
を備えることを特徴とする半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202180037528.4A CN115699273A (zh) | 2020-05-26 | 2021-05-19 | 半导体装置制造用粘接片及使用该半导体装置制造用粘接片的半导体装置的制造方法 |
KR1020227038095A KR20220160680A (ko) | 2020-05-26 | 2021-05-19 | 반도체 장치 제조용 접착 시트 및 그것을 이용한 반도체 장치의 제조 방법 |
JP2022526934A JP7412555B2 (ja) | 2020-05-26 | 2021-05-19 | 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020091221 | 2020-05-26 | ||
JP2020-091221 | 2020-05-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021241359A1 true WO2021241359A1 (ja) | 2021-12-02 |
Family
ID=78744639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2021/018981 WO2021241359A1 (ja) | 2020-05-26 | 2021-05-19 | 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7412555B2 (ja) |
KR (1) | KR20220160680A (ja) |
CN (1) | CN115699273A (ja) |
TW (1) | TW202202587A (ja) |
WO (1) | WO2021241359A1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017171814A (ja) * | 2016-03-25 | 2017-09-28 | 株式会社巴川製紙所 | プリント配線基板用接着シート |
WO2019156253A1 (ja) * | 2018-02-12 | 2019-08-15 | 株式会社巴川製紙所 | 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3779601B2 (ja) | 2001-11-28 | 2006-05-31 | 株式会社巴川製紙所 | 半導体装置組立用マスクシート |
JP4319892B2 (ja) | 2003-11-07 | 2009-08-26 | 株式会社巴川製紙所 | 半導体装置製造用接着シート及び半導体装置の製造方法 |
JP2008095014A (ja) | 2006-10-13 | 2008-04-24 | Tomoegawa Paper Co Ltd | Qfn用熱硬化型樹脂組成物および接着シート |
-
2021
- 2021-05-19 WO PCT/JP2021/018981 patent/WO2021241359A1/ja active Application Filing
- 2021-05-19 KR KR1020227038095A patent/KR20220160680A/ko not_active Application Discontinuation
- 2021-05-19 CN CN202180037528.4A patent/CN115699273A/zh active Pending
- 2021-05-19 JP JP2022526934A patent/JP7412555B2/ja active Active
- 2021-05-21 TW TW110118522A patent/TW202202587A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017171814A (ja) * | 2016-03-25 | 2017-09-28 | 株式会社巴川製紙所 | プリント配線基板用接着シート |
WO2019156253A1 (ja) * | 2018-02-12 | 2019-08-15 | 株式会社巴川製紙所 | 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2021241359A1 (ja) | 2021-12-02 |
TW202202587A (zh) | 2022-01-16 |
CN115699273A (zh) | 2023-02-03 |
JP7412555B2 (ja) | 2024-01-12 |
KR20220160680A (ko) | 2022-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4258984B2 (ja) | 半導体装置の製造方法 | |
JP2008193105A (ja) | 接着剤組成物、その製造方法、これを用いた接着フィルム、半導体搭載用基板及び半導体装置 | |
JP6956492B2 (ja) | 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 | |
JP3617417B2 (ja) | 接着剤、接着部材、接着部材を備えた半導体搭載用配線基板及びこれを用いた半導体装置 | |
WO2018207408A1 (ja) | 半導体封止成形用仮保護フィルム | |
JP2008095014A (ja) | Qfn用熱硬化型樹脂組成物および接着シート | |
JPH10183086A (ja) | 熱伝導性接着剤組成物及び該組成物を用いた熱伝導性接着フィルム | |
JP3528639B2 (ja) | 接着剤、接着部材、接着部材を備えた半導体搭載用配線基板及びこれを用いた半導体装置 | |
JP6909171B2 (ja) | 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 | |
TW201109406A (en) | Lamination method of adhesive tape and lead frame | |
WO2021241359A1 (ja) | 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 | |
JP2000144077A (ja) | 両面接着フィルム及びこれを用いた半導体装置 | |
JP5585542B2 (ja) | 接着フィルムおよびその用途ならびに半導体装置の製造方法 | |
JP4556472B2 (ja) | 接着剤、接着部材、接着部材を備えた半導体搭載用配線基板及びこれを用いた半導体装置 | |
WO2022176585A1 (ja) | 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 | |
JP2009158817A (ja) | Qfn用熱硬化型樹脂組成物及びそれを用いたqfn用接着シート | |
JP2009135506A (ja) | 接着フィルムおよびその用途ならびに半導体装置の製造方法 | |
JP2020150076A (ja) | 半導体装置製造用粘着シート | |
KR20210142074A (ko) | 반도체 장치의 제조 방법 및 반도체 장치 제조용 접착시트 | |
JP4839564B6 (ja) | 接着フィルム及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21812944 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2022526934 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20227038095 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 21812944 Country of ref document: EP Kind code of ref document: A1 |