WO2021235005A1 - Procédé de production de dispositif à semi-conducteur - Google Patents

Procédé de production de dispositif à semi-conducteur Download PDF

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Publication number
WO2021235005A1
WO2021235005A1 PCT/JP2021/002715 JP2021002715W WO2021235005A1 WO 2021235005 A1 WO2021235005 A1 WO 2021235005A1 JP 2021002715 W JP2021002715 W JP 2021002715W WO 2021235005 A1 WO2021235005 A1 WO 2021235005A1
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Prior art keywords
manufacturing
layer
wafer
bump
forming surface
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PCT/JP2021/002715
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English (en)
Japanese (ja)
Inventor
智則 篠田
拓 根本
桜子 田村
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リンテック株式会社
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Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to KR1020227020889A priority Critical patent/KR20230012452A/ko
Priority to JP2022524880A priority patent/JPWO2021235005A1/ja
Priority to CN202180035591.4A priority patent/CN115605980A/zh
Publication of WO2021235005A1 publication Critical patent/WO2021235005A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device. More specifically, the present invention relates to a method for manufacturing a semiconductor device provided with a cured product of a curable resin as a protective layer.
  • connection pad portion As a semiconductor device equipped with a plurality of electronic components, eutectic solder, high temperature solder, gold, etc. are used for the connection pad portion.
  • a convex electrode hereinafter referred to as a “terminal” in the present specification
  • a mounting method is adopted in which those terminals are brought into face-to-face contact with the phase-corresponding terminal portions on the chip mounting substrate and melted / diffused.
  • a semiconductor chip provided with a semiconductor wafer and terminal electrodes (bumps) provided on the semiconductor wafer is coated with a conductive material to form a shield layer.
  • the method is adopted.
  • Such a shield layer is formed in a state where the bumps provided on the semiconductor wafer are covered with the bump covering sheet (see, for example, Patent Document 1).
  • the present invention has been made in view of such a problem, and even if the conductive material for forming the shield layer wraps around to the bump forming surface side of the semiconductor wafer, the conductive material is formed on the bump forming surface. It is an object of the present invention to provide a method for manufacturing a semiconductor device, which can sufficiently suppress the problem.
  • the present inventors have formed a conductive material for forming a shield layer by forming a shield layer on a semiconductor chip in which the bump forming surface of the semiconductor wafer is covered with a resin layer made of a cured product of a curable resin.
  • the present invention has been completed by finding that it is possible to sufficiently suppress the formation of the conductive material on the bump forming surface even if the material wraps around to the bump forming surface side of the semiconductor wafer.
  • a method for manufacturing a semiconductor device which comprises the following step (A).
  • the following step (B) The method for manufacturing a semiconductor device according to [1], further comprising.
  • Step (C1) Step of forming a curable resin layer on the bump forming surface-Step (C2): Step of curing the curable resin layer to form the protective layer-Step (C3): The above-mentioned Step of individualizing the semiconductor wafer on which the protective layer is formed to obtain a semiconductor chip in which the bump forming surface is protected by the protective layer [4]
  • the step (C1) is the following steps (C1-1) and ( The method for manufacturing a semiconductor device according to [3], which comprises C1-3).
  • Step (C1-1) A step of attaching a protective layer forming laminate having a laminated structure in which a support sheet and a curable resin layer are laminated on the bump forming surface, with the curable resin layer as a pasting surface.
  • the step (C1) is the following step.
  • the step (C) is a step (C0) after the step (C2).
  • the semiconductor wafer is cut from the bump forming surface side and separated into individual pieces.
  • Step (C4) A step / step of preparing a wafer for manufacturing a semiconductor chip, in which a groove portion as a planned division line is formed on the bump forming surface without reaching the surface opposite to the bump forming surface.
  • C5) A step / step (C6) of covering the bump forming surface of the semiconductor chip manufacturing wafer with the curable resin and embedding the curable resin in the groove formed in the semiconductor chip manufacturing wafer.
  • Step of grinding the surface of the semiconductor chip manufacturing wafer opposite to the bump forming surface C7): Step of curing the curable resin to obtain the semiconductor chip manufacturing wafer with a protective layer.
  • Step (E1) A step of individually placing the semiconductor chip on the coating sheet so that at least one of the bump and the bump forming surface is covered with the coating sheet [13].
  • step (E2) A step of placing the semiconductor chips collectively on the covering sheet so that at least one of the bump and the bump forming surface is covered with the covering sheet [14].
  • Step (F) The step of expanding the coating sheet on which the semiconductor chip is placed [15] The step of any one of [1] to [11] further comprising the following steps (G) to (I). Manufacturing method of semiconductor devices.
  • the present invention even if the conductive material for forming the shield layer wraps around to the bump forming surface side of the semiconductor wafer, it is possible to sufficiently suppress the conductive material from being formed on the bump forming surface. , It becomes possible to provide a method for manufacturing a semiconductor chip.
  • the term "active ingredient” refers to a component contained in a target composition excluding a diluting solvent such as water or an organic solvent.
  • a diluting solvent such as water or an organic solvent.
  • (meth) acrylic acid means both “acrylic acid” and “methacrylic acid”, and other similar terms are also used.
  • the "substituted amino group” means a group in which one or two hydrogen atoms of an amino group are substituted with a group other than a hydrogen atom.
  • the weight average molecular weight and the number average molecular weight are polystyrene-equivalent values measured by a gel permeation chromatography (GPC) method.
  • the lower limit value and the upper limit value described stepwise can be independently combined with respect to a preferable numerical range (for example, a range such as content).
  • a preferable numerical range for example, a range such as content.
  • the “favorable lower limit value (10)” and the “more preferable upper limit value (60)” are combined to form “10 to 60". You can also do it.
  • FIG. 1 shows a process schematic diagram of the method for manufacturing a semiconductor chip of the present invention.
  • the method for manufacturing a semiconductor chip of the present invention is a step (C) (“step (C1) to (C3)”) or step (C ′) (“step (C4) to (C8)”) for manufacturing a semiconductor chip. It is preferable to include the following step (A) and the following step (B) in this order.
  • step (E1) or the following step (E2) and the following step (F) are arbitrarily incorporated between the step (C) or the step (C') and the step (A).
  • -Step (E1) A step of individually placing semiconductor chips on a covering sheet so that at least one of a bump and a bump forming surface is covered with the covering sheet
  • step (A) is an essential step, and the other steps are arbitrary steps.
  • the manufacturing method including the above steps, even if the conductive material for forming the shield layer wraps around to the bump forming surface side of the semiconductor wafer, the conductive material is sufficiently suppressed from being formed on the bump forming surface. A semiconductor chip can be obtained.
  • semiconductor chip is also simply referred to as a "chip”.
  • FIG. 2 is a diagram showing an outline of a first embodiment of the method for manufacturing a semiconductor device of the present invention.
  • step (C) step (C1-1), step (C1-2), step (C1-3), step (C2), step (CX)).
  • step (C3)), Step (E1), Step (A), Step (B) are performed in this order.
  • the step (C) is a step of manufacturing a semiconductor chip, and roughly includes the following step (C1), the following step (C2), and the following step (C3) in this order.
  • -Step (C1) Step of forming a curable resin layer on the bump forming surface
  • Step (C2) Step of curing the curable resin layer to form a protective layer
  • Step (C3) Forming a protective layer A process of disassembling the semiconductor wafer to obtain a semiconductor chip in which the bump forming surface is protected by a protective layer.
  • Step (C1) a curable resin layer is formed on the bump forming surface of the semiconductor wafer provided with the bump.
  • the method for forming the curable resin layer is not particularly limited, and examples thereof include a method in which a curable resin composition described later is applied to a bump forming surface of a semiconductor wafer provided with bumps and then dried.
  • FIG. 3 shows an example of a semiconductor wafer provided with bumps used in the method for manufacturing a semiconductor device of the present invention.
  • the semiconductor wafer 10 provided with the bumps includes the bumps 12 on the circuit surface 11a of the semiconductor wafer 11.
  • a plurality of bumps 12 are usually provided.
  • the "semiconductor wafer provided with bumps” is also referred to as a "wafer with bumps” or a “wafer for manufacturing a semiconductor chip”.
  • the "semiconductor wafer” is also referred to as a "wafer”
  • the "circuit surface” is also referred to as a "bump forming surface”.
  • the shape of the bump 12 is not particularly limited, and may be any shape as long as it can be brought into contact with and fixed to an electrode or the like on a substrate for mounting the chip.
  • the bump 12 is spherical, but the bump 12 may be a spheroid.
  • the spheroid may be, for example, a spheroid stretched in a direction perpendicular to the bump forming surface 11a of the wafer 11, or may be pulled horizontally with respect to the bump forming surface 11a of the wafer 11. It may be a stretched spheroid.
  • the bump 12 may have a pillar shape.
  • the height of the bump 12 is not particularly limited, and is, for example, 30 to 300 ⁇ m, preferably 60 to 250 ⁇ m, and more preferably 80 to 200 ⁇ m.
  • the "height of the bump 12" means the height at the portion existing at the highest position from the bump forming surface 11a when focusing on one bump.
  • the number of bumps 12 is also not particularly limited and may be appropriately changed according to design requirements.
  • the wafer 11 is, for example, a semiconductor wafer on which circuits such as wiring, capacitors, diodes, and transistors are formed on the surface.
  • the material of the wafer is not particularly limited, and examples thereof include silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers.
  • the size of the wafer 11 is usually 8 inches (diameter 200 mm) or more, preferably 12 inches (diameter 300 mm) or more, more preferably 400 mm or more, still more preferably 500 mm or more, and particularly preferably 500 mm or more, from the viewpoint of increasing batch processing efficiency. It is 600 mm or more.
  • the shape of the wafer is not limited to a circle, and may be a square shape such as a square or a rectangle.
  • the size of the wafer 11 is preferably such that the length of the longest side is within the range of the above size (diameter) from the viewpoint of increasing batch processing efficiency.
  • the thickness of the wafer 11 is, for example, 300 ⁇ m or more, preferably 400 ⁇ m or more, more preferably 500 ⁇ m or more, still more preferably, from the viewpoint of suppressing warpage of the wafer 11 due to curing of the curable resin layer in the above step (C2). Is 600 ⁇ m or more. It is preferable that the wafer 11 is not thinned by backside grinding.
  • the ratio [wafer size (diameter) / wafer thickness] of the size and thickness of the wafer 11 is preferably 1000 or less, more preferably 700 or less, still more preferably 500 or less, still more preferably 400 or less, still more preferably. It is 300 or less.
  • the ratio [wafer size (diameter) / wafer thickness] of the size and thickness of the wafer 11 is usually 100 or more, preferably 200 or more.
  • the curable resin layer may be formed by using a protective layer forming laminate having a laminated structure in which a support sheet and a curable resin layer are laminated.
  • the step (C1) preferably includes the following steps (C1-1) and (C1-3), and may further include the following steps (C1-2).
  • Step (C1-1) A step / step of sticking a protective layer forming laminate having a laminated structure in which a support sheet and a curable resin layer are laminated on a bump forming surface, with the curable resin layer as a sticking surface.
  • steps (C1-1), (C1-2) and (C1-3) will be described in detail.
  • a protective layer forming laminate having a laminated structure in which a support sheet and a curable resin layer are laminated is attached to the bump forming surface with the curable resin layer as the affixing surface.
  • the support sheet constituting the protective layer forming laminate is not particularly limited as long as it is a sheet-shaped member capable of supporting the curable resin layer.
  • the support sheet may be a support base material, a release film in which one surface of the support base material is peeled off, or a laminate having the support base material and the pressure-sensitive adhesive layer. It may be a body.
  • the curable resin layer is formed on the release-treated surface of the support substrate.
  • the support sheet is a laminate with the pressure-sensitive adhesive layer of the support base material, the curable resin layer is bonded to the pressure-sensitive adhesive layer of the support sheet.
  • the support sheet 30a has the support base material 31, the buffer layer 32, and the pressure-sensitive adhesive layer 33 in this order. It is preferable to have a laminated structure.
  • the protective layer forming laminate 30 preferably has a laminated structure in which the support base material 31, the buffer layer 32, the pressure-sensitive adhesive layer 33, and the curable resin layer 20 are laminated in this order.
  • the layer 33 and the buffer layer 32 are pressurized by the bump 12. Therefore, at the initial stage of crimping, the curable resin layer 20, the pressure-sensitive adhesive layer 33, and the cushioning layer 32 are deformed into a concave shape that follows the shape of the bump 12.
  • the top of the bump 12 finally penetrates the curable resin layer 20 and comes into contact with the support sheet 30a.
  • the pressure applied to the bump 12 is dispersed by the pressure-sensitive adhesive layer 33 and the cushioning layer 32 of the support sheet 30a, and damage to the bump 12 is suppressed.
  • the bump 12 does not necessarily have to protrude toward the support sheet 30a, and may be embedded inside the curable resin layer 20. Even in such a state, the top of the bump 12 can be exposed from the protective layer by an exposure treatment or the like described later.
  • the support sheet constituting the protective layer forming laminate used in the step (C1-1) has good embedding property in bumps and is from the protective layer forming laminate in the step (C1-3). Easy peeling of the support sheet is required.
  • the cushioning layer 32 included in the support sheet 30a is preferably 100 to 500 ⁇ m in thickness, preferably 150 to 500 ⁇ m, from the viewpoint of facilitating good embedding in bumps. It is more preferably 450 ⁇ m, and even more preferably 200 to 400 ⁇ m.
  • the pressure-sensitive adhesive layer 33 of the support sheet 30a preferably has a thickness of 5 to 50 ⁇ m, preferably 5 to 30 ⁇ m. It is more preferably present, and even more preferably 5 to 15 ⁇ m.
  • step (C1-1) can be carried out using, for example, a surface protective tape affixing device for backside grinding (“RAD-3520F / 12” manufactured by Lintec Corporation).
  • RAD-3520F / 12 manufactured by Lintec Corporation
  • Step (C1-2)) In the step (C1-2), the surface opposite to the bump forming surface of the bumped wafer is ground. That is, the back surface of the wafer with bumps is ground to thin the wafer.
  • the grinding in the step (C1-2) is described in the above-mentioned step (C1-1) and later in the state where the protective layer forming laminate is formed on the bump forming surface as a part of the step (C1). It may be performed between the steps (C1-3).
  • the surface opposite to the bump forming surface of the bumped wafer may be ground.
  • the protective layer is formed.
  • the bump forming surface 11a side of the bumped wafer 10 to which the laminate 30 is attached is fixed on a fixed table (not shown) such as a chuck table, and the back surface 11b of the wafer 11 is ground by a grinder (not shown) or the like. Do it at.
  • the thickness of the bumped wafer 10 after grinding can be 250 ⁇ m or less.
  • the above step (C1-2) can be carried out using, for example, a grinding machine (“DGP8761” manufactured by Disco Corporation).
  • a grinding machine (“DGP8761” manufactured by Disco Corporation).
  • the support sheet is peeled off from the protective layer forming laminate to form a curable resin layer on the bump forming surface.
  • the support sheet 30a having a laminated structure in which the support base material 31, the cushioning layer 32, and the pressure-sensitive adhesive layer 33 are laminated in this order is obtained from the curable resin layer 20. It is peeled off and separated from the protective layer forming laminate 30. As a result, the curable resin layer 20 is formed on the bump forming surface 11a of the bumped wafer 10. The surface of the curable resin layer 20 opposite to the bump forming surface 11a side is exposed.
  • the method of peeling the support sheet 30a from the protective layer forming laminate 30 is not limited to this method.
  • the pressure-sensitive adhesive layer 33 is a pressure-sensitive adhesive layer formed of an energy ray-curable pressure-sensitive adhesive, a heat-foaming type pressure-sensitive adhesive, or a water-swelling type pressure-sensitive adhesive, energy ray-curing, heat-foaming,
  • the support sheet 30a may be peeled off from the protective layer forming laminate 30 by water swelling.
  • step (C1-3) can be carried out using, for example, a tape remover for BG (“RAD-3010F / 12” manufactured by Lintec Corporation).
  • the bumped wafer 10 having the curable resin layer 20 formed on the bump forming surface 11a by the above steps (C1) (steps (C1-1) to (C1-3)) is subjected to the next step (C2). ..
  • the curable resin layer formed on the bump forming surface of the bumped wafer is cured to form a protective layer.
  • the protective layer formed by curing the curable resin layer becomes stronger than the curable resin layer at room temperature. Therefore, by forming the protective layer, the bump forming surface and the bump neck are well protected.
  • the curing of the curable resin layer can be performed by either thermosetting or curing by irradiation with energy rays, depending on the type of the curable component contained in the curable resin layer.
  • the "energy beam” means an electromagnetic wave or a charged particle beam having an energy quantum, and examples thereof include ultraviolet rays, electron beams, and the like, and ultraviolet rays are preferable.
  • the curing temperature is preferably 80 to 250 ° C.
  • the curing time is preferably 1 to 5 hours.
  • the conditions for curing by irradiation with energy rays are appropriately set depending on the type of energy rays used.
  • the amount of light is preferably 50 mJ / cm 2 or more and 2000 mJ / cm 2 or less, and more preferably 100 mJ / cm 2 or more and 1000 mJ / cm 2 or less.
  • the illuminance is preferably 50 mW / cm 2 or more and 500 mw / cm 2 or less.
  • examples of the light source include a high-pressure mercury lamp, a metal halide lamp, a xenon lamp, a DeepUV lamp, and an ultraviolet LED.
  • the peak wavelength is preferably 180 nm or more and 420 nm or less.
  • the curable resin layer in the process of curing a curable resin layer to form a protective layer, the curable resin layer is made to flow by heating during heat curing to make the protective layer flat.
  • the curable resin layer is preferably a thermosetting resin layer from the viewpoint of improving the above.
  • the curable resin layer is a thermosetting resin layer
  • the curable resin layer in the step (C1), is formed in a state where the bumps are embedded inside without completely penetrating from the curable resin layer. Even so, the top of the bump can be exposed from the protective layer by flowing the curable resin by heating during thermosetting. From this point of view, the curable resin layer is preferably a thermosetting resin layer.
  • the bumped wafer in which the curable resin layer is cured and the protective layer is formed on the bump forming surface by the above step (C2) is subjected to the next step (C3).
  • a support sheet or a back grind tape for example, a support base material or a cushioning layer constituting the protective layer forming laminate is used.
  • the backgrinding tape in which the adhesive layer is laminated in this order is not exposed to heat during the heat treatment for curing the thermosetting resin layer. Therefore, since heat resistance to heat when curing the thermosetting resin layer is not required for the support sheet or back grind tape, there is an advantage that the degree of freedom in designing the support sheet or back grind tape is greatly improved.
  • step (C3) the protective layer covering the top of the bump or the protective layer adhering to a part of the top of the bump is removed to expose the top of the bump to expose the top of the bump.
  • An exposure process (“step (CX)” in FIG. 2) may be performed.
  • step (CX) a form of reattaching the back grind tape, which is a modification of the fourth embodiment described later (step (C4)-> step (C5)-> step (CY)-> step (C7)-> step (C5)-> step (C6).
  • the exposure treatment (step (CX)) is performed after the step (C7). It may be performed, or it may be performed after the second step (CY).
  • the exposure treatment for exposing the top of the bump include a wet etching treatment, an etching treatment such as a dry etching treatment, and a polishing treatment.
  • the dry etching process include a plasma etching process (plasma cleaning) and the like.
  • the plasma etching process may be performed under high temperature conditions, but when the plasma etching process is performed under high temperature conditions, the curable resin layer is already cured to form a protective layer, so that the plasma etching process is performed.
  • the curing shrinkage of the curable resin layer does not occur due to the high temperature condition, and therefore the warp of the wafer due to the curing shrinkage of the curable resin layer does not occur.
  • the exposure treatment may be performed for the purpose of retracting the protective layer until the top of the bump is exposed.
  • step (C3) the bumped wafer on which the protective layer is formed is fragmented to obtain a semiconductor chip in which the bump forming surface is protected by the protective layer.
  • individualization is performed by cutting from the bump forming surface side.
  • a multifunction wafer mounter (“RAD-2510F / 12” manufactured by Lintec Corporation) is used to place a wafer with a bump on which a protective layer is formed on a dicing tape or the like. It can be carried out by doing. Cutting can be appropriately performed by adopting conventionally known methods such as blade dicing and laser dicing.
  • the step (C3) may include a step of forming a division starting point for individualizing the bumped semiconductor wafer.
  • Examples of the method for forming the division starting point for individualizing the bumped semiconductor wafer include a pre-dicing method and a stealth dicing (registered trademark) method.
  • a groove portion 13 is formed on the bump forming surface 11a of the bumped wafer 10 along a line to be divided, and the back surface 11b of the bumped wafer 10 is ground to reach at least the groove portion 13 of the bumped wafer.
  • This is a method in which the wafer 10 with bumps is separated into individual pieces by performing a thinning process of 10.
  • the division starting point for individualizing the bumped wafer 10 is a groove.
  • the groove is formed after the step (C2), that is, after the protective layer 40 is formed on the bump forming surface 11a of the bumped wafer 10.
  • the groove is formed from the surface of the protective layer 40 toward the inside of the wafer 11 of the bumped wafer 10.
  • the bumped wafer 10 on which the protective layer 40 is formed can be easily individualized with the protective layer formed.
  • the protective layer 40 is also formed when the protective layer 40 is formed on the bump forming surface 11a of the bumped wafer 10 after forming a groove from the bump forming surface 11a of the bumped wafer 10 toward the inside of the wafer 11. It is possible to individualize the bumped wafer 10 with the protective layer 40 formed.
  • the back surface 11b of the bumped wafer 10 is ground to at least reach the groove, and then the bumped wafer 10 is thinned, and then an external force such as a pressing force is applied to use the groove as a division starting point.
  • the protective layer 40 is also cut together with the bumped wafer 10, and the bumped wafer 10 on which the protective layer 40 is formed can be individualized with the protective layer 40 still attached.
  • the stealth dicing method is a method in which a modified region is formed inside the wafer of the bumped wafer by laser light, and the bumped wafer is individualized using the modified region as a division starting point.
  • the wafer 11 of the bumped wafer 10 is irradiated with a laser beam by aligning a condensing point with the inside of the wafer, thereby forming a modified region due to multiphoton absorption as a division starting point.
  • the modified region forms a cutting starting point region inside a predetermined distance from the laser light incident surface along the planned division line of the bumped wafer 10.
  • the laser light incident surface may be the bump forming surface 11a or the back surface 11b of the bumped wafer 10, but the bump forming of the bumped wafer 10. From the viewpoint of suppressing the influence on the circuit and the like formed on the surface 11a, the laser light incident surface is preferably the back surface 11b of the bumped wafer 10.
  • the protective layer 40 is formed on the bump forming surface 11a of the bumped wafer 10. Further, a back grind tape or the like may be attached to the surface of the protective layer 40. Therefore, even when the modified region is formed after the step (C1), the laser light incident surface is preferably the back surface 11b of the bumped wafer 10.
  • ⁇ Process (E1) the semiconductor chips are individually placed on the coating sheet so that at least one of the bump and the bump forming surface is covered with the coating sheet.
  • the distance between the semiconductor chips and the adjacent semiconductor chips can be appropriately adjusted, and the step (F) described later can be omitted. can.
  • the protective layer 40 formed on the bump 12 and the bump forming surface 11a is covered with the covering sheet 80.
  • FIG. 5B a part of the protective layer 40 formed on the bump forming surface 11a is covered with the covering sheet 80.
  • the semiconductor chip 100 is pressed against the covering sheet 80 with the bump 12 side, that is, the bump forming surface 11a facing down, and the bump 12 is embedded in the covering sheet 80.
  • the coating sheet 80 is brought into contact with the bump 12 of the semiconductor chip 100, and the semiconductor chip 100 is pressed against the coating sheet 80.
  • the outermost surface of the covering sheet 80 is sequentially crimped to the surface of the bump 12 and the protective layer 40 formed on the bump forming surface 11a.
  • the covering sheet 80 is softened, spreads between the bumps 12 so as to cover the bumps 12, and adheres to the protective layer 40 formed on the bump forming surface 11a.
  • the bump 12 is embedded by covering the surface of the bump 12, particularly the surface of the vicinity of the protective layer 40 formed on the bump forming surface 11a.
  • the covering sheet 80 as shown in FIG. 5A
  • the present invention is not limited to this.
  • a part of the protective layer 40 formed on the bump forming surface 11a is covered with the covering sheet 80, but the bump 12 is not covered with the covering sheet 80.
  • the protective layer 40 formed on the bump forming surface 11a may not be covered with the covering sheet 80.
  • a known method of crimping and attaching various sheets to an object can be applied, and examples thereof include a method using a laminating roller and a vacuum laminator.
  • the pressure at which the semiconductor chip is crimped to the coating sheet is not particularly limited, and is preferably 0.1 to 1.5 MPa, more preferably 0.3 to 1.3 MPa.
  • the heating temperature is not particularly limited, and is preferably 30 to 70 ° C, more preferably 35 to 65 ° C, and even more preferably 40 to 60 ° C.
  • coating sheet As the coating sheet, a double-sided tape, a single-layer sheet of an adhesive composition (so-called non-carrier film), an elastomer, or the like is preferably used.
  • the coating sheet forming laminate for forming the coating sheet is used when forming the coating sheet on the semiconductor chip, and is disclosed in, for example, International Publication No. 2020/032175. Any known material can be used.
  • FIG. 6 is a cross-sectional view schematically showing an example of a laminate for forming a coating sheet used in the method for manufacturing a semiconductor device of the present invention.
  • the coating sheet forming laminate 81 includes a viscoelastic layer 82 composed of an embedded layer 83 and a pressure-sensitive adhesive layer 84 as a coating sheet 80, and is formed on the outermost surface layer of the viscoelastic layer 82 on the side of the embedded layer 83.
  • a release film 85 is further provided, and a release film 86 is further provided on the outermost layer of the viscoelastic layer 82 on the side of the pressure-sensitive adhesive layer 84.
  • both the release films 85 and 86 are peeled off and bonded onto the support, and then the semiconductor chip 100 is attached from the side of the pressure-sensitive adhesive layer 84 of the viscoelastic layer 82.
  • the bump 12 can be crimped from the bump 12 side, the bump 12 can be embedded in the viscoelastic layer 82, and the shield layer 90 can be further formed from above.
  • the laminated body for forming a covering sheet is not limited to the one shown in FIG. 6, and a part of the structure may be changed, deleted or added.
  • the coating sheet forming laminate for example, (i) a coating sheet forming laminate including a release film 86, an adhesive layer 84, an embedded layer 83, and a base material in this order, (ii).
  • Examples thereof include a coating sheet forming laminate having a layer 84 and a release film 86 in this order, and (v) a coating sheet forming laminate having a release film 85, an embedded layer 83, and a release film 86 in this order.
  • the laminate for forming a coating sheet according to (i) above includes a viscoelastic layer 82 composed of a pressure-sensitive adhesive layer 84 and an embedded layer 83 as a coating sheet 80, and is the outermost layer of the viscoelastic layer 82 on the side of the pressure-sensitive adhesive layer 84.
  • a release film 86 is further provided, and a base material is further provided on the side of the embedded layer 83 of the viscoelastic layer 82.
  • the release film 86 is peeled off, the semiconductor chip 100 is crimped to the embedded layer 83 side of the viscoelastic layer 82 from the bump 12 side, and the viscoelastic layer 82 is formed.
  • the bump 12 can be embedded and the shield layer 90 can be further formed on the bump 12.
  • the laminate for forming a coating sheet of (ii) is provided with a viscoelastic layer 82 composed of a pressure-sensitive adhesive layer 84 and an embedded layer 83 as a coating sheet 80, and a release film is provided on the side of the pressure-sensitive adhesive layer 84 of the viscoelastic layer 82.
  • a base material is further provided on the embedded layer 83 side of the viscoelastic layer 82, and a second pressure-sensitive adhesive layer (that is, a bonded pressure-sensitive adhesive layer) is further provided on the surface of the base material opposite to the embedded layer 83. Further provided with a release film.
  • the release film is peeled off and fixed to another support (not shown), and further, the release film 86 is peeled off to form a semiconductor on the viscoelastic layer 82.
  • the chip 100 can be crimped from the bump 12 side, the bump 12 can be embedded in the viscoelastic layer 82, and the shield layer 90 can be further formed on the bump 12.
  • the step (A) is a step of forming a shield layer on a semiconductor chip in which the bump forming surface of the semiconductor wafer provided with the bump is protected by a protective layer made of a cured product of a curable resin, and is a step of forming the bump and bump forming surface.
  • a shield layer is formed on at least a part of the portion exposed from the coating sheet of the semiconductor chip in a state where at least one of the above is coated on the coating sheet.
  • a conductive resin is applied to at least a part of the part exposed from the coating sheet of the semiconductor chip, and further heat-cured to form a shield layer made of a conductive material.
  • a method of covering with a conductive material to form a shield layer a method such as sputtering, ion plating, or spray coating can also be used.
  • the conductive resin (conductive material) is not particularly limited, and examples thereof include copper, nickel, titanium, silver, tin, and alloys and coatings thereof. These may be used alone or in combination of two or more. Among these, copper, nickel and silver are preferable from the viewpoint of reliability and mass productivity.
  • the coating sheet can be peeled off from at least one of the bump and the semiconductor wafer, and the semiconductor chip coated with the shield layer can be taken out.
  • the shield layer is formed on the semiconductor chip whose bump forming surface of the semiconductor wafer is covered with the protective layer, the conductive material for forming the shield layer is on the bump forming surface side of the semiconductor wafer. Even if it wraps around and penetrates between the semiconductor wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump forming surface. Further, in the first embodiment, since the bump forming surface of the semiconductor wafer is covered with the protective layer, the bump embedding amount of the coating sheet can be reduced, and the coating sheet is peeled off from the bumped wafer. It is easy and can suppress the generation of adhesive residue at the time of peeling.
  • FIG. 7 shows a schematic diagram of the second embodiment.
  • step (C) step (C1-1), step (C1-2), step (C1-3), step (C2), step (CX)).
  • Step (C3)) Step (E2), Step (F), Step (A), Step (B) in this order.
  • the second embodiment is different from the first embodiment in that the step (E2) and the step (F) are performed instead of the above-mentioned step (E1).
  • the differences from the first embodiment (step (E2) and step (F)) will be described in detail.
  • step (E2) the semiconductor chips are collectively placed on the covering sheet so that at least one of the bump and the bump forming surface is covered with the covering sheet.
  • the step (E2) can be performed in the same manner as the step (E1) except that the semiconductor chips are collectively mounted instead of mounting the semiconductor chips individually.
  • the coating sheet on which the semiconductor chip is placed is expanded.
  • the coating sheet may be expanded in the arrangement direction of the semiconductor chips, or the coating sheet may be expanded radially.
  • the coating sheet can be expanded by using, for example, an expanding device or the like.
  • the expansion tape may be expanded in the arrangement direction of the semiconductor chips, or the expansion tape may be expanded radially.
  • the expansion tape a known expansion tape such as the wafer processing tape described in International Publication No. 2018/003312 can be used.
  • the shield layer is formed on the semiconductor chip whose bump forming surface of the semiconductor wafer is covered with the protective layer, the conductive material for forming the shield layer is on the bump forming surface side of the semiconductor wafer. Even if it wraps around and penetrates between the semiconductor wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump forming surface. Further, in the second embodiment, since the bump forming surface of the semiconductor wafer is covered with the protective layer, the bump embedding amount of the coating sheet can be reduced, and the coating sheet is peeled off from the bumped wafer. It is easy and can suppress the generation of adhesive residue at the time of peeling.
  • FIG. 8 shows a schematic diagram of the third embodiment.
  • step (C) step (C1-1), step (C1-2), step (C1-3), step (C2), step (CX)).
  • Step (C3)), Step (F), Step (A), Step (B) are performed in this order.
  • the third embodiment is different from the second embodiment in that the above-mentioned step (E2) is not performed and the step (C3) in the step (C) is different.
  • the differences from the second embodiment (step (C3)) will be described in detail.
  • the bumped wafer on which the protective layer is formed is cut from the side opposite to the bump forming surface to be individualized, and a semiconductor chip in which the bump forming surface is protected by the protective layer is obtained. Cutting can be appropriately performed by adopting conventionally known methods such as blade dicing and laser dicing.
  • the bumped wafer on which the protective layer is formed is bump-formed.
  • step (C3) of the second embodiment that is, the step (C3) of the first embodiment
  • a semiconductor is formed by placing a bumped wafer on which a protective layer is formed on a coating sheet and then cutting the bumped wafer on which a protective layer is formed from the side opposite to the bump forming surface to separate them into pieces.
  • the step of transferring the chip (step (E2)) can be omitted.
  • the shield layer is formed on the semiconductor chip whose bump forming surface of the semiconductor wafer is covered with the protective layer, the conductive material for forming the shield layer is on the bump forming surface side of the semiconductor wafer. Even if it wraps around and penetrates between the semiconductor wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump forming surface. Further, in the third embodiment, dicing, expansion, and formation of a shield layer can be performed while the dicing tape is attached. Further, in the third embodiment, the step (E2) can be omitted, and the productivity is improved.
  • the bump embedding amount of the coating sheet can be reduced, and the coating sheet is peeled off from the bumped wafer. It is easy and can suppress the generation of adhesive residue at the time of peeling.
  • FIG. 9 shows a schematic diagram of the fourth embodiment.
  • step (C') step (C4), step (C5), step (C6), step (CY), step (C7), step (C-).
  • the fourth embodiment is different from the first embodiment in that the steps (C4) to (C8) in the step (C') are performed instead of the steps (C1) to (C3) in the step (C) described above. ..
  • steps (C4) to (C8) will be described in detail.
  • steps (C4) to (C8) the steps (C4), step (C5), step (C6), step (C7), and step (C8) are usually performed in this order, but the order may be changed as appropriate. For example, the order of the process (C7) and the process (C8) may be exchanged.
  • FIG. 10 A top view of an example of the semiconductor wafer prepared in the step (C4) is shown in FIG. 10, and a schematic cross-sectional view is shown in FIG.
  • the groove portion 13 as the planned division line does not reach the back surface 11b on the opposite side of the bump forming surface 11a on the bump forming surface 11a of the semiconductor wafer 11 having the bump forming surface 11a provided with the bump 12.
  • a semiconductor wafer (wafer for manufacturing a semiconductor chip) 10 having a bump is prepared. In FIG. 10, bumps are not shown.
  • the bump 12 and the semiconductor wafer 11 are the same as the bump 12 and the semiconductor wafer 11 described in the first embodiment.
  • a plurality of groove portions 13 are formed in a grid pattern as a planned division line when the semiconductor chip manufacturing wafer 10 is separated into individual pieces. There is.
  • the plurality of groove portions 13 are notched grooves formed when the dicing method (Dicing Before Grinding) is applied, and are formed at a depth shallower than the thickness of the wafer 11, and the deepest portion of the groove portions 13 is the back surface of the wafer 11. I try not to reach 11b.
  • the plurality of groove portions 13 can be formed by dicing using a conventionally known wafer dicing device provided with a dicing blade (for example, a dicing saw (“DFD6361” manufactured by Disco Corporation)).
  • the plurality of groove portions 13 may be formed so that the semiconductor chip to be manufactured has a desired size and shape, and the groove portions 13 do not necessarily have to be formed in a grid pattern as shown in FIG.
  • the size of the semiconductor chip is usually about 0.5 mm ⁇ 0.5 mm to 1.0 mm ⁇ 1.0 mm, but is not limited to this size.
  • the width of the groove 13 is preferably 10 to 2,000 ⁇ m, more preferably 50 to 1,000 ⁇ m, still more preferably 100 to 500 ⁇ m, and even more preferably 100 to 2,000 ⁇ m from the viewpoint of improving the embedding property of the curable resin 20a. It is 100 to 300 ⁇ m.
  • the depth of the groove portion 13 is adjusted according to the thickness of the wafer used and the required chip thickness, and is preferably 30 to 700 ⁇ m, more preferably 60 to 600 ⁇ m, and further preferably 100 to 500 ⁇ m.
  • the semiconductor chip manufacturing wafer 10 prepared in the process (C4) is used in the process (C5).
  • Step (C5) The outline of the step (C5) is shown in FIG.
  • the protective layer forming laminate 30 having a laminated structure in which the support sheet 30a and the layer 20 of the curable resin 20a are laminated on the bump forming surface 11a of the semiconductor chip manufacturing wafer 10 is attached to the layer. 20 is pressed as a sticking surface for sticking.
  • the bump forming surface 11a of the semiconductor chip manufacturing wafer 10 is covered with the curable resin 20a, and the curable resin 20a is formed in the groove portion 13 formed in the semiconductor chip manufacturing wafer 10. Be embedded.
  • the side surface portion of the semiconductor chip is cured when the semiconductor chip manufacturing wafer 10 is fragmented in the step (C8). It can be coated with the sex resin 20a. That is, the coating material that is a precursor of the protective layer 40 that covers the side surface of the semiconductor chip, which is necessary for improving the strength of the semiconductor chip and suppressing the peeling of the protective layer 40, is obtained in step (C5). Can be formed by
  • the pressing force when the protective layer forming laminate 30 is attached to the semiconductor chip manufacturing wafer 10 is preferably 1 to 200 kPa from the viewpoint of improving the embedding property of the curable resin 20a in the groove portion 13. , More preferably 5 to 150 kPa, still more preferably 10 to 100 kPa.
  • the pressing force when the protective layer forming laminate 30 is attached to the semiconductor chip manufacturing wafer 10 may be appropriately changed from the initial stage to the final stage of the attachment. For example, from the viewpoint of improving the embedding property of the curable resin 20a in the groove portion 13, it is preferable to lower the pressing force at the initial stage of application and gradually increase the pressing force.
  • the curable resin 20a is a thermosetting resin
  • the embedding property of the curable resin 20a in the groove 13 is better. It is preferable to perform heating from the viewpoint of making the plastic.
  • the curable resin 20a is a thermosetting resin
  • the curable resin 20a is temporarily increased in fluidity by heating, and is cured by continuing heating. Therefore, by heating within the range in which the fluidity of the curable resin 20a is improved, the curable resin 20a can be easily spread over the entire groove portion 13, and the embedding property in the groove portion 13 can be further improved.
  • the specific heating temperature (pasting temperature) is preferably 50 to 150 ° C, more preferably 60 to 130 ° C, and even more preferably 70 to 110 ° C.
  • the heat treatment performed on the curable resin 20a is not included in the curing treatment of the curable resin 20a.
  • the laminated body 30 for forming a protective layer is attached to the wafer 10 for manufacturing a semiconductor chip, it is preferable to perform it in a reduced pressure environment.
  • the groove portion 13 becomes a negative pressure, and the curable resin 20a easily spreads over the entire groove portion 13.
  • the specific pressure in the reduced pressure environment is preferably 0.001 to 50 kPa, more preferably 0.01 to 5 kPa, and even more preferably 0.05 to 1 kPa.
  • the thickness of the layer 20 of the curable resin 20a in the protective layer forming laminate 30 is preferably more than 30 ⁇ m and 200 ⁇ m or less from the viewpoint of further improving the embedding property of the curable resin 20a in the groove portion 13. It is more preferably 60 to 150 ⁇ m, still more preferably 80 to 130 ⁇ m.
  • the support sheet 30a included in the protective layer forming laminate 30 supports the curable resin 20a and also has a function as a backgrinding tape.
  • the support sheet 30a functions as a back grind tape, which makes it easy to carry out the back grind process. ..
  • step (C5) can be carried out using, for example, a surface protective tape affixing device for back surface grinding (“RAD-3520F / 12” manufactured by Lintec Corporation).
  • FIG. 13 shows a schematic diagram of the process (C6) to the process (C8).
  • the support sheet 30a is peeled off from the protective layer forming laminate 30.
  • the amount of grinding when grinding the back surface 11b of the semiconductor chip manufacturing wafer 10 may be at least an amount that exposes the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10, but further grinding is performed for semiconductor chip manufacturing.
  • the curable resin 20a embedded in the groove 13 may be ground.
  • the curable resin 20a since the support sheet 30a is peeled off in the step (CY) before the step (C7) is carried out, the curable resin 20a is a thermosetting resin and is cured in the step (C7). Even when the heat treatment for this purpose is carried out, the support sheet 30a is not required to have heat resistance. Therefore, the degree of freedom in designing the support sheet 30a is improved.
  • the above step (C6) can be carried out using, for example, a grinding machine (“DGP8761” manufactured by Disco Corporation). Further, the above step (CY) can be carried out by using, for example, a tape remover for BG (“RAD-3010F / 12” manufactured by Lintec Corporation).
  • Step (C7) Specifically, in the step (C7), as shown in (1-c) of FIG. 13, the curable resin 20a is cured to obtain a wafer 10 for manufacturing a semiconductor chip with a protective layer 40.
  • the protective layer 40 formed by curing the curable resin 20a becomes stronger than the curable resin 20a at room temperature. Therefore, by forming the protective layer 40, the bump neck is well protected.
  • the wafer 10 for manufacturing a semiconductor chip with the protective layer 40 is separated into individual pieces to obtain a semiconductor chip whose side surface is also covered with the protective layer 40. A semiconductor chip having excellent strength can be obtained. Moreover, the peeling of the protective layer 40 is also suppressed.
  • the curable resin 20a can be cured by either thermosetting or curing by irradiation with energy rays, depending on the type of the curable component contained in the curable resin 20a.
  • the "energy beam” means an electromagnetic wave or a charged particle beam having an energy quantum, and examples thereof include ultraviolet rays, electron beams, and the like, and ultraviolet rays are preferable.
  • the curing temperature is preferably 90 to 200 ° C.
  • the curing time is preferably 1 to 3 hours.
  • the conditions for curing by energy ray irradiation are appropriately set depending on the type of energy ray to be used.
  • the illuminance is preferably 170 to 250 mw / cm 2 , and the amount of light is preferably 300. It is ⁇ 3,000 mJ / cm 2 .
  • the curability is curable from the viewpoint of removing air bubbles and the like that may enter when the groove portion 13 is embedded in the curable resin 20a in the step (C5).
  • the resin 20a is preferably a thermosetting resin. That is, when the curable resin 20a is a thermosetting resin, the curable resin 20a is temporarily increased in fluidity by heating, and is cured by continuing heating.
  • the curable resin 20a is preferably an energy ray curable resin. The details of the curable resin 20a for forming the protective layer 40 will be described later.
  • Step (C8) In the step (C8), specifically, as shown in FIG. 13 (1-d), a portion of the protective layer 40 of the wafer 10 for manufacturing a semiconductor chip with a protective layer 40 formed in a groove is bumped. Cut from the formation surface side along the planned division line to make individual pieces.
  • the cutting is performed from the bump forming surface side, but the cutting may be performed from the side opposite to the bump forming surface to make individual pieces. Cutting can be appropriately performed by adopting conventionally known methods such as blade dicing and laser dicing. As a result, it is possible to obtain a semiconductor chip 100 in which at least the bump forming surface 11a and the side surface are covered with the protective layer 40.
  • the semiconductor chip 100 Since the bump forming surface 11a and the side surface of the semiconductor chip 100 are covered with the protective layer 40, the semiconductor chip 100 has excellent strength. Further, since the bump forming surface 11a and the side surface are covered with the protective layer 40, the bonding surface (interface) between the bump forming surface 11a and the protective layer 40 is not exposed on the side surface of the semiconductor chip 100. Of the joint surface (interface) between the bump forming surface 11a and the protective layer 40, the exposed portion exposed on the side surface of the semiconductor chip 100 tends to be the starting point of film peeling. Since the semiconductor chip 100 does not have the exposed portion, film peeling from the exposed portion is unlikely to occur in the process of cutting the wafer 10 for manufacturing the semiconductor chip to manufacture the semiconductor chip 100 or after the manufacturing. Therefore, the semiconductor chip 100 in which the peeling of the protective layer 40 is suppressed can be obtained.
  • the protective layer 40 is transparent. Is preferable. Since the protective layer 40 is transparent, the semiconductor wafer 11 can be seen through, so that the visibility of the planned division line is ensured. Therefore, it becomes easy to cut along the planned division line.
  • a wafer 10 for manufacturing a semiconductor chip on which a protective layer is formed is placed on a dicing tape or the like. It can be carried out by placing it in.
  • the protective layer forming laminate 30 used in the fourth embodiment of the method for manufacturing a semiconductor device of the present invention will be described.
  • the laminated body 30 for forming the protective layer may be used in embodiments other than the fourth embodiment.
  • the protective layer forming laminate 30 used in the fourth embodiment of the method for manufacturing a semiconductor device of the present invention includes a layer 20 of a curable resin 20a on one surface of the support sheet 30a.
  • the layer 20 of the curable resin 20a can be transported as a product package, or the layer 20 of the curable resin 20a can be transported in the process. At that time, the layer 20 of the curable resin 20a is stably supported and protected.
  • the protective layer forming laminate 30 includes a support sheet 30a and a layer 20 of a curable resin 20a formed on one surface of the support sheet 30a.
  • the support sheet 30a is a pressure-sensitive adhesive sheet in which the support base material 31 and the pressure-sensitive adhesive layer 33 are laminated, and the pressure-sensitive adhesive layer 33 of the pressure-sensitive adhesive sheet and the layer 20 of the curable resin 20a are laminated. And may be pasted together.
  • the support sheet 30a is a pressure-sensitive adhesive sheet in which the support base material 31, the buffer layer 32 (intermediate layer), and the pressure-sensitive adhesive layer 33 are laminated in this order, and the pressure-sensitive adhesive sheet is adhered.
  • the agent layer 33 and the layer 20 of the curable resin 20a may be bonded to each other.
  • a pressure-sensitive adhesive sheet in which a support base material 31, a buffer layer 32 (intermediate layer), and a pressure-sensitive adhesive layer 33 are laminated in this order can be suitably used as a backgrinding tape.
  • the protective layer forming laminate 30 has a back grind tape as the support sheet 30a, the layer 20 of the curable resin 20a of the protective layer forming laminate 30 and the bump forming surface of the semiconductor chip manufacturing wafer are formed. After bonding, it can be suitably used when the back surface of a wafer for manufacturing a semiconductor chip is ground and thinned.
  • the curable resin 20a is a film-like resin used for covering the bump forming surface of the semiconductor chip manufacturing wafer and filling the groove formed in the semiconductor chip manufacturing wafer, and is heated or irradiated with energy rays.
  • the protective layer 40 is formed by curing with. That is, the curable resin 20a may be a thermosetting resin film (20a-1) that is cured by heating, or may be an energy ray-curable resin film (20a-2) that is cured by energy ray irradiation. ..
  • the physical characteristics of the curable resin 20a can be adjusted by adjusting either or both of the types and amounts of the components contained in the curable resin 20a.
  • thermosetting resin film (20a-1) and the energy ray curable resin film (20a-2) will be described.
  • the thermosetting resin film (20a-1) contains a polymer component (A) and a thermosetting component (B).
  • the thermosetting resin film (20a-1) is formed from, for example, a thermosetting resin composition (20a-1-1) containing a polymer component (A) and a thermosetting component (B).
  • the polymer component (A) is a component that can be regarded as being formed by a polymerization reaction of the polymerizable compound.
  • the thermosetting component (B) is a component capable of undergoing a curing (polymerization) reaction using heat as a trigger for the reaction.
  • the curing (polymerization) reaction also includes a polycondensation reaction.
  • thermosetting resin composition (20a-1) the content of each component in the total amount of the active component of the thermosetting resin composition (20a-1-1)
  • thermosetting resin composition (20a-) It has the same meaning as “content of each component of the thermosetting resin film (20a-1) formed from 1-1)”.
  • thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) contain the polymer component (A).
  • the polymer component (A) is a polymer compound for imparting film-forming property, flexibility and the like to the thermosetting resin film (20a-1).
  • the polymer component (A) one type may be used alone, or two or more types may be used in combination. When two or more kinds of polymer components (A) are used in combination, their combinations and ratios can be arbitrarily selected.
  • polymer component (A) examples include acrylic resin (resin having (meth) acryloyl group), polyester, urethane resin (resin having urethane bond), acrylic urethane resin, and silicone resin (having siloxane bond).
  • acrylic resin resin having (meth) acryloyl group
  • polyester urethane resin
  • acrylic urethane resin acrylic urethane resin
  • silicone resin having siloxane bond
  • Rubber-based resin resin having a rubber structure
  • phenoxy resin thermosetting polyimide and the like.
  • an acrylic resin is preferable.
  • the acrylic resin examples include known acrylic polymers.
  • the weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 300,000 to 1,500,000, still more preferably 500,000 to 1,000,000. be.
  • Mw weight average molecular weight
  • the thermosetting resin film (20a-1) can easily follow the uneven surface of the adherend, for example, the adherend and heat. It is easy to suppress the generation of voids and the like with the curable resin film (20a-1). Therefore, it is easy to improve not only the covering property of the bump forming surface 11a of the semiconductor wafer 11 but also the embedding property in the groove portion 13.
  • the glass transition temperature (Tg) of the acrylic resin is preferably ⁇ 60 to 70 ° C., more preferably ⁇ 40 to 50 ° C., and even more preferably ⁇ 30 ° C. to 30 ° C.
  • the glass transition temperature (Tg) of the acrylic resin is at least the above lower limit value, the adhesive force between the protective layer 40 and the support sheet 30a is suppressed, and the peelability of the support sheet 30a is improved.
  • the glass transition temperature (Tg) of the acrylic resin is not more than the above upper limit value, the adhesive force between the thermosetting resin film (20a-1) and the adherend of the protective layer 40 is improved. Therefore, it is possible to more easily suppress the film peeling of the protective layer 40.
  • the acrylic resin is selected from, for example, a polymer of one or more (meth) acrylic acid esters; (meth) acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide and the like. Examples thereof include copolymers of two or more kinds of monomers.
  • Examples of the (meth) acrylic acid ester constituting the acrylic resin include methyl (meth) acrylic acid, ethyl (meth) acrylic acid, n-propyl (meth) acrylic acid, isopropyl (meth) acrylic acid, and (meth).
  • N-butyl acrylate isobutyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, (meth) acrylate Heptyl, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, n-octyl (meth) acrylate, n-nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, Undecyl (meth) acrylate, dodecyl (meth) acrylate (lauryl acrylate), tridecyl (meth) acrylate, tetradecyl (meth) acrylate (myristyl (meth) acrylate), pentadecy
  • (Meta) Acrylic acid cycloalkyl esters such as (meth) acrylate isobornyl and (meth) acrylate dicyclopentanyl;
  • (Meta) Acrylic acid aralkyl esters such as benzyl (meth) acrylic acid;
  • (Meta) Acrylic acid cycloalkenyl ester such as (meth) acrylic acid dicyclopentenyl ester;
  • (Meta) Acrylic acid cycloalkenyloxyalkyl ester such as (meth) acrylic acid dicyclopentenyloxyethyl ester;
  • a glycidyl group-containing (meth) acrylic acid ester such as glycidyl (meth) acrylic acid;
  • the alkyl group constituting the alkyl ester is a (meth) acrylic acid alkyl ester having a chain structure having 1 to 18 carbon atoms, a glycidyl group-containing (meth) acrylic acid ester, and a hydroxyl group-containing (meth) acrylic. It is preferably a copolymer in which an acid ester is combined, and the alkyl group constituting the alkyl ester is a (meth) acrylic acid alkyl ester having a chain structure having 1 to 4 carbon atoms, and a glycidyl group-containing (meth) acrylic.
  • a copolymer in which an acid ester and a hydroxyl group-containing (meth) acrylic acid ester are combined is more preferable, and a copolymer in which butyl acrylate, methyl acrylate, glycidyl acrylate, and 2-hydroxyethyl acrylate are combined. Is more preferable.
  • acrylic resin for example, in addition to the (meth) acrylic acid ester, one or more monomers selected from (meth) acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide and the like are copolymerized. It may be made of acrylic acid.
  • the monomer constituting the acrylic resin may be one kind alone or two or more kinds. When the number of monomers constituting the acrylic resin is two or more, the combination and ratio thereof can be arbitrarily selected.
  • the acrylic resin may have a functional group capable of binding to other compounds such as a vinyl group, a (meth) acryloyl group, an amino group, a hydroxyl group, a carboxy group, and an isocyanate group.
  • the functional group of the acrylic resin may be bonded to another compound via a cross-linking agent (F) described later, or may be directly bonded to another compound without a cross-linking agent (F). ..
  • F cross-linking agent
  • thermoplastic resin other than the acrylic resin
  • thermoplastic resin is acrylic. It may be used alone without using a based resin, or may be used in combination with an acrylic resin.
  • thermoplastic resin By using the thermoplastic resin, the peelability of the protective layer 40 from the support sheet 30a is improved, and the thermosetting resin film (20a-1) easily follows the uneven surface of the adherend, so that the adherend can be easily followed. The generation of voids and the like may be further suppressed between the thermosetting resin film (20a-1) and the thermosetting resin film (20a-1). Therefore, it is easy to improve not only the covering property of the bump forming surface 11a of the semiconductor wafer 11 but also the embedding property in the groove portion 13.
  • the weight average molecular weight of the thermoplastic resin is preferably 1,000 to 100,000, more preferably 3,000 to 80,000.
  • the glass transition temperature (Tg) of the thermoplastic resin is preferably ⁇ 30 to 150 ° C., more preferably ⁇ 20 to 120 ° C.
  • thermoplastic resin examples include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, polystyrene and the like.
  • thermoplastic resin may be used alone or in combination of two or more. When there are two or more types of thermoplastic resin, the combination and ratio thereof can be arbitrarily selected.
  • the content of the polymer component (A) is preferably 5 to 85% by mass, more preferably 5 to 80% by mass, based on the total amount of the active ingredient of the thermosetting resin composition (20a-1-1). ..
  • the polymer component (A) may also correspond to the thermosetting component (B).
  • the thermosetting resin composition (20a-1-1) when the thermosetting resin composition (20a-1-1) contains a component corresponding to both the polymer component (A) and the thermosetting component (B), it is thermosetting.
  • the resin composition (20a-1-1) is considered to contain both the polymer component (A) and the thermosetting component (B).
  • thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) contain a thermosetting component (B).
  • the thermosetting component (B) is a component for curing the thermosetting resin film (20a-1) to form a hard protective layer 40.
  • the thermosetting component (B) one type may be used alone, or two or more types may be used in combination. When there are two or more thermosetting components (B), their combinations and ratios can be arbitrarily selected.
  • thermosetting component (B) examples include epoxy-based thermosetting resins, thermosetting polyimides, polyurethanes, unsaturated polyesters, and silicone resins. Among these, epoxy-based thermosetting resins are preferable.
  • the epoxy-based thermosetting resin is composed of an epoxy resin (B1) and a thermosetting agent (B2).
  • B1 an epoxy resin
  • B2 a thermosetting agent
  • As the epoxy-based thermosetting resin one type may be used alone, or two or more types may be used in combination. When there are two or more types of epoxy thermosetting resins, their combinations and ratios can be arbitrarily selected.
  • the epoxy resin (B1) examples include known ones, such as polyfunctional epoxy resin, biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolac epoxy resin, dicyclopentadiene type epoxy resin, and the like.
  • examples thereof include biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, and bifunctional or higher functional epoxy compounds.
  • polyfunctional aromatic epoxy resins are preferable.
  • epoxy resin (B1) an epoxy resin having an unsaturated hydrocarbon group may be used.
  • Epoxy resins having unsaturated hydrocarbon groups have higher compatibility with acrylic resins than epoxy resins having no unsaturated hydrocarbon groups. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained by using the thermosetting resin film (20a-1) is improved.
  • Examples of the epoxy resin having an unsaturated hydrocarbon group include a compound obtained by converting a part of the epoxy group of the polyfunctional epoxy resin into a group having an unsaturated hydrocarbon group. Such a compound can be obtained, for example, by subjecting an epoxy group to an addition reaction of (meth) acrylic acid or a derivative thereof.
  • Examples of the epoxy resin having an unsaturated hydrocarbon group include a compound in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring or the like constituting the epoxy resin.
  • the unsaturated hydrocarbon group is a polymerizable unsaturated group, and specific examples thereof include an ethenyl group (vinyl group), a 2-propenyl group (allyl group), a (meth) acryloyl group, and a (meth) acryloyl group. ) Examples include an acrylamide group. Among these, acryloyl group is preferable.
  • the number average molecular weight of the epoxy resin (B1) is not particularly limited, but is preferably 300 to 300 from the viewpoint of the curability of the thermosetting resin film (20a-1) and the strength and heat resistance of the protective layer 40 after curing. It is 30,000, more preferably 400 to 10,000, still more preferably 500 to 3,000.
  • the epoxy equivalent of the epoxy resin (B1) is preferably 100 to 1,000 g / eq, more preferably 300 to 800 g / eq.
  • the epoxy resin (B1) may be used alone or in combination of two or more. When two or more types of epoxy resin (B1) are used in combination, the combination and ratio thereof can be arbitrarily selected.
  • thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).
  • thermosetting agent (B2) include compounds having two or more functional groups capable of reacting with an epoxy group in one molecule.
  • the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxy group, and a group in which an acid group is annealed, and the phenolic hydroxyl group, an amino group, or an acid group is annealed. It is preferably a group, and more preferably a phenolic hydroxyl group or an amino group.
  • thermosetting agents (B2) examples of the phenol-based curing agent having a phenolic hydroxyl group include polyfunctional phenol resin, biphenol, novolak-type phenol resin, dicyclopentadiene-based phenol resin, and aralkylphenol resin. ..
  • examples of the amine-based curing agent having an amino group include dicyandiamide (hereinafter, may be abbreviated as "DICY”) and the like.
  • DIY dicyandiamide
  • a phenolic curing agent having a phenolic hydroxyl group is preferable, and a novolak type phenol resin is more preferable.
  • the thermosetting agent (B2) may have an unsaturated hydrocarbon group.
  • the thermosetting agent (B2) having an unsaturated hydrocarbon group may be, for example, a compound in which a part of the hydroxyl group of the phenol resin is replaced with a group having an unsaturated hydrocarbon group, or an aromatic ring of the phenol resin. , Compounds in which a group having an unsaturated hydrocarbon group is directly bonded, and the like can be mentioned.
  • the unsaturated hydrocarbon group in the thermosetting agent (B2) is the same as the unsaturated hydrocarbon group in the above-mentioned epoxy resin having an unsaturated hydrocarbon group.
  • thermosetting agent (B2) When a phenolic curing agent is used as the thermosetting agent (B2), the thermosetting agent (B2) has a softening point or a glass transition temperature from the viewpoint of facilitating the improvement of the peelability of the protective layer 40 from the support sheet 30a. Higher ones are preferable.
  • the number average molecular weight of the resin components such as polyfunctional phenol resin, novolak type phenol resin, dicyclopentadiene phenol resin, and aralkyl phenol resin is preferably 300 to 30,000. It is more preferably 400 to 10,000, still more preferably 500 to 3,000.
  • the molecular weight of the non-resin component such as biphenol and dicyandiamide in the thermosetting agent (B2) is not particularly limited, but is preferably 60 to 500, for example.
  • thermosetting agent (B2) one type may be used alone, or two or more types may be used in combination. When there are two or more types of thermosetting agents (B2), their combinations and ratios can be arbitrarily selected.
  • the content of the thermosetting agent (B2) is preferably 0.1 to 500 parts by mass with respect to the content of 100 parts by mass of the epoxy resin (B1). , More preferably 1 to 200 parts by mass.
  • the content of the thermosetting agent (B2) is at least the above lower limit value, the curing of the thermosetting resin film (20a-1) becomes easier to proceed.
  • the content of the thermosetting agent (B2) is not more than the above upper limit value, the moisture absorption rate of the thermosetting resin film (20a-1) is reduced, and the thermosetting resin film (20a-1) is used. The reliability of the package obtained by using is further improved.
  • the content of the thermosetting component (B) (total content of the epoxy resin (B1) and the thermosetting agent (B2)) is the polymer component (A). ) Is preferably 50 to 1000 parts by mass, more preferably 100 to 900 parts by mass, and further preferably 150 to 800 parts by mass with respect to 100 parts by mass of the content.
  • the content of the thermosetting component (B) is in such a range, the adhesive force between the protective layer 40 and the support sheet 30a is suppressed, and the peelability of the support sheet 30a is improved.
  • the thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may further contain a curing accelerator (C).
  • the curing accelerator (C) is a component for adjusting the curing rate of the thermosetting resin composition (20a-1-1).
  • Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol and tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole.
  • 2-Phenyl-4-methylimidazole 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole and other imidazoles (one or more hydrogen atoms other than hydrogen atom) (Imidazole substituted with an organic group); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (phosphine in which one or more hydrogen atoms are substituted with an organic group); tetraphenylphosphonium tetraphenylborate, triphenylphosphine. Examples thereof include tetraphenylboron salts such as tetraphenylborate. Among these, imidazoles are preferable, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferable.
  • the curing accelerator (C) may be used alone or in combination of two or more. When there are two or more types of curing accelerators (C), their combinations and ratios can be arbitrarily selected.
  • thermosetting resin composition (20a1-1-1) when the curing accelerator (C) is used, the content of the curing accelerator (C) is 100 parts by mass of the content of the thermosetting component (B). On the other hand, it is preferably 0.01 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass.
  • the content of the curing accelerator (C) is at least the above lower limit value, the effect of using the curing accelerator (C) can be more remarkably obtained.
  • the highly polar curing accelerator (C) is a thermosetting resin film (20a) under high temperature and high humidity conditions. -1) The effect of suppressing segregation by moving to the adhesion interface side with the adherend becomes higher, and the reliability of the package obtained by using the thermosetting resin film (20a-1) becomes higher. improves.
  • thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain a filler (D).
  • a filler (D) By containing the filler (D), it becomes easy to adjust the thermal expansion coefficient of the protective layer 40 obtained by curing the curable resin film 20a within an appropriate range, and the thermosetting resin film (20a-1) The reliability of the package obtained by using is further improved. Further, when the thermosetting resin film (20a-1) contains the filler (D), the hygroscopicity of the protective layer 40 can be reduced and the heat dissipation can be improved.
  • the filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
  • Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride and the like; spherical beads of these inorganic fillers; surface modification of these inorganic fillers. Goods; Single crystal fibers of these inorganic fillers; Glass fibers and the like.
  • the inorganic filler is preferably silica or alumina.
  • filler (D) one type may be used alone, or two or more types may be used in combination. When there are two or more types of filler (D), the combination and ratio thereof can be arbitrarily selected.
  • the content of the filler (D) is preferably 5 to 80% by mass, more preferably 5 to 80% by mass, based on the total amount of the active ingredient of the thermosetting resin composition (20a-1-1). Is 7 to 60% by mass.
  • the content of the filler (D) is in such a range, the above-mentioned coefficient of thermal expansion can be easily adjusted.
  • the average particle size of the filler (D) is preferably 5 to 1000 nm, more preferably 5 to 500 nm, and even more preferably 10 nm to 300 nm.
  • the above average particle size is obtained by measuring the outer diameter of one particle at several points and obtaining the average value.
  • thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain a coupling agent (E).
  • a coupling agent (E) having a functional group capable of reacting with an inorganic compound or an organic compound By using a coupling agent (E) having a functional group capable of reacting with an inorganic compound or an organic compound, the thermosetting resin film (20a-1) and the protective layer 40 adhere to and adhere to the adherend. Easy to improve sex. Therefore, it is possible to more easily suppress the film peeling of the protective layer 40 as the protective layer. Further, the protective layer 40 obtained by curing the thermosetting resin film (20a-1) by using the coupling agent (E) does not impair the heat resistance and easily improves the water resistance. ..
  • the coupling agent (E) is preferably a compound having a functional group capable of reacting with the functional groups of the polymer component (A), the thermosetting component (B) and the like, and is preferably a silane coupling agent. More preferred.
  • Preferred silane coupling agents include, for example, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2-( 3,4-Epoxycyclohexyl) ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3- (2-aminoethylamino) propyltrimethoxysilane, 3- (2-aminoethyl) Amino) propylmethyldiethoxysilane
  • the coupling agent (E) one type may be used alone, or two or more types may be used in combination. When there are two or more kinds of coupling agents (E), their combinations and ratios can be arbitrarily selected.
  • thermosetting resin composition (20a-1-1) when the coupling agent (E) is used, the content of the coupling agent (E) is the polymer component (A) and the thermosetting component (B). ) Is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and further preferably 0.1 to 5 parts by mass with respect to 100 parts by mass.
  • the content of the coupling agent (E) is equal to or higher than the above lower limit value, the dispersibility of the filler (D) in the resin is improved, and the adherend of the thermosetting resin film (20a-1) is used.
  • the effect of using the coupling agent (E), such as improvement of the adhesiveness of the coupling agent (E) can be obtained more remarkably. Further, when the content of the coupling agent (E) is not more than the above upper limit value, the generation of outgas is further suppressed.
  • the polymer component (A) has a functional group such as a vinyl group, a (meth) acryloyl group, an amino group, a hydroxyl group, a carboxy group, or an isocyanate group, which can be bonded to other compounds, such as the above-mentioned acrylic resin.
  • a functional group such as a vinyl group, a (meth) acryloyl group, an amino group, a hydroxyl group, a carboxy group, or an isocyanate group, which can be bonded to other compounds, such as the above-mentioned acrylic resin.
  • the cross-linking agent (F) for binding the functional group to another compound and cross-linking the functional group is used. May be contained.
  • the initial adhesive force and the cohesive force of the thermosetting resin film (20a-1) can be adjusted.
  • cross-linking agent (F) examples include an organic polyvalent isocyanate compound, an organic polyvalent imine compound, a metal chelate-based cross-linking agent (a cross-linking agent having a metal chelate structure), and an aziridine-based cross-linking agent (a cross-linking agent having an aziridinyl group). And so on.
  • organic polyvalent isocyanate compound examples include an aromatic polyhydric isocyanate compound, an aliphatic polyhydric isocyanate compound, and an alicyclic polyvalent isocyanate compound (hereinafter, these compounds are collectively abbreviated as "aromatic polyhydric isocyanate compound and the like”. ); Trimerics such as the aromatic polyvalent isocyanate compound, isocyanurates and adducts; terminal isocyanate urethane prepolymers obtained by reacting the aromatic polyvalent isocyanate compounds with polyol compounds, etc. Can be mentioned.
  • the "adduct” is a low content of the aromatic polyhydric isocyanate compound, the aliphatic polyhydric isocyanate compound or the alicyclic polyvalent isocyanate compound, and ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil. It means a reaction product with a molecularly active hydrogen-containing compound, and examples thereof include a xylylene diisocyanate adduct of trimethylolpropane.
  • organic polyvalent isocyanate compound for example, 2,4-tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylenid isocyanate; diphenylmethane-4, 4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; trimethylolpropane
  • examples thereof include compounds in which one or more of tolylene diisocyanate, hexamethylene diisocyanate and xylylene diisocyanate are added to all or some hydroxylates of the polyols such as lysine diis
  • organic polyvalent imine compound examples include N, N'-diphenylmethane-4,4'-bis (1-aziridinecarboxyamide), trimethylolpropane-tri- ⁇ -aziridinyl propionate, and tetramethylolmethane.
  • -Tri- ⁇ -aziridinyl propionate, N, N'-toluene-2,4-bis (1-aziridinecarboxyamide) triethylene melamine and the like can be mentioned.
  • the cross-linking agent (F) When an organic multivalent isocyanate compound is used as the cross-linking agent (F), it is preferable to use a hydroxyl group-containing polymer as the polymer component (A).
  • a hydroxyl group-containing polymer When the cross-linking agent (F) has an isocyanate group and the polymer component (A) has a hydroxyl group, the reaction between the cross-linking agent (F) and the polymer component (A) causes a thermosetting resin film (20a-1). ) Can easily introduce a crosslinked structure.
  • the cross-linking agent (F) may be used alone or in combination of two or more.
  • the combination and ratio thereof can be arbitrarily selected.
  • the content of the cross-linking agent (F) is based on 100 parts by mass of the polymer component (A). It is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and further preferably 0.5 to 5 parts by mass.
  • the content of the cross-linking agent (F) is at least the lower limit value, the effect of using the cross-linking agent (F) is more remarkable. Further, when the content of the cross-linking agent (F) is not more than the upper limit value, the excessive use of the cross-linking agent (F) is suppressed.
  • thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain an energy ray-curable resin (G). Since the thermosetting resin film (20a-1) contains the energy ray curable resin (G), the characteristics can be changed by irradiation with energy rays.
  • the energy ray curable resin (G) is obtained by polymerizing (curing) an energy ray curable compound.
  • the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth) acryloyl group are preferable.
  • acrylate compound examples include trimethylolpropanetri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol monohydroxypenta (meth).
  • the weight average molecular weight of the energy ray-curable compound is preferably 100 to 30,000, more preferably 300 to 10,000.
  • the energy ray-curable compound used for polymerization one type may be used alone, or two or more types may be used in combination. When two or more energy ray-curable compounds used for polymerization are used, the combination and ratio thereof can be arbitrarily selected.
  • the content of the energy ray curable resin (G) is preferably 1 based on the total amount of the active ingredients of the thermosetting resin composition (20a-1-1). It is ⁇ 95% by mass, more preferably 5 to 90% by mass, still more preferably 10 to 85% by mass.
  • thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) contain the energy ray-curable resin (G), the polymerization reaction of the energy ray-curable resin (G).
  • the thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain a photopolymerization initiator (H) in order to efficiently proceed.
  • photopolymerization initiator (H) examples include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, benzoin dimethyl ketal, 2,4.
  • the photopolymerization initiator (H) may be used alone or in combination of two or more.
  • the combination and ratio thereof can be arbitrarily selected.
  • the content of the photopolymerization initiator (H) is preferably 0.1 with respect to the content of 100 parts by mass of the energy ray-curable resin (G). It is ⁇ 20 parts by mass, more preferably 1 to 10 parts by mass, still more preferably 2 to 5 parts by mass.
  • thermosetting resin film (20a-1) and the thermosetting resin composition (20a-1-1) may contain the general-purpose additive (I).
  • the general-purpose additive (I) may be a known one, and may be arbitrarily selected depending on the intended purpose, and is not particularly limited.
  • Preferred general-purpose additives (I) include, for example, plasticizers, antistatic agents, antioxidants, colorants (dye, pigment), gettering agents and the like.
  • the general-purpose additive (I) one type may be used alone, or two or more types may be used in combination. When there are two or more general-purpose additives (I), their combinations and ratios can be arbitrarily selected.
  • the content of the general-purpose additive (I) is not particularly limited and may be appropriately selected depending on the intended purpose.
  • thermosetting resin composition (20a-1-1) preferably further contains a solvent.
  • the thermosetting resin composition (20a-1-1) containing a solvent has good handleability.
  • the solvent is not particularly limited, but preferred ones are, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol) and 1-butanol; Examples thereof include esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (compounds having an amide bond).
  • the solvent one type may be used alone, or two or more types may be used in combination. When there are two or more kinds of solvents, the combination and ratio thereof can be arbitrarily selected.
  • the solvent is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the thermosetting resin composition (20a-1-1) can be mixed more uniformly.
  • thermosetting resin composition (20a-1-1) is prepared by blending each component for constituting the thermosetting resin composition (20a-1-1).
  • the order of addition of each component at the time of blending is not particularly limited, and two or more kinds of components may be added at the same time.
  • the solvent may be mixed with any compounding component other than this solvent and diluted in advance, or any compounding component other than the solvent may be used in advance.
  • the solvent may be used by mixing with these compounding components without diluting.
  • the method of mixing each component at the time of blending is not particularly limited, and from known methods such as a method of rotating a stirrer or a stirring blade to mix; a method of mixing using a mixer; a method of adding ultrasonic waves to mix. It may be selected as appropriate.
  • the temperature and time at the time of addition and mixing of each component are not particularly limited as long as each compounding component is not deteriorated, and may be appropriately adjusted, but the temperature is preferably 15 to 30 ° C.
  • the energy ray-curable resin film (20a-2) contains the energy ray-curable component (a).
  • the energy ray-curable resin film (20a-2) is formed from, for example, an energy ray-curable resin composition (20a-2-1) containing an energy ray-curable component (a).
  • the energy ray-curable component (a) is preferably uncured, preferably has adhesiveness, and more preferably uncured and has adhesiveness.
  • “energy ray curable resin composition” It has the same meaning as "content of each component of the energy ray curable resin film (20a-2) formed from (20a-2-1)".
  • the energy ray-curable component (a) is a component that is cured by irradiation with energy rays, and is also a component for imparting film-forming property, flexibility, and the like to the energy ray-curable resin film (20a-2).
  • Examples of the energy ray-curable component (a) include a polymer (a1) having an energy ray-curable group and having a weight average molecular weight of 80,000 to 2,000,000, and an energy ray-curable group. Examples thereof include the compound (a2) having a molecular weight of 100 to 80,000.
  • the polymer (a1) may be at least partially crosslinked by a cross-linking agent or may not be cross-linked.
  • Examples of the polymer (a1) having an energy ray-curable group and having a weight average molecular weight of 80,000 to 2,000,000 include an acrylic polymer having a functional group capable of reacting with a group of another compound.
  • An acrylic resin (a1-) obtained by polymerizing (a11) with an energy ray-curable compound (a12) having a group that reacts with the functional group and an energy ray-curable group such as an energy ray-curable double bond. 1) can be mentioned.
  • the functional group that can react with the group of other compounds examples include a hydroxyl group, a carboxy group, an amino group, and a substituted amino group (one or two hydrogen atoms of the amino group are substituted with a group other than the hydrogen atom. Group), an epoxy group, and the like.
  • the functional group is preferably a group other than the carboxy group.
  • the functional group is preferably a hydroxyl group.
  • Acrylic polymer having a functional group examples include those obtained by copolymerizing an acrylic monomer having a functional group and an acrylic monomer having no functional group, and other than these monomers. Further, a monomer other than the acrylic monomer (non-acrylic monomer) may be copolymerized. Further, the acrylic polymer (a11) may be a random copolymer or a block copolymer.
  • acrylic monomer having a functional group examples include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, a substituted amino group-containing monomer, and an epoxy group-containing monomer.
  • hydroxyl group-containing monomer examples include hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, and (meth) acrylic.
  • (Meta) hydroxyalkyl (meth) acrylic acid such as 2-hydroxybutyl acid, 3-hydroxybutyl (meth) acrylic acid, 4-hydroxybutyl (meth) acrylic acid; non- (meth) acrylic unsaturated such as vinyl alcohol and allyl alcohol. Examples thereof include alcohols (unsaturated alcohols having no (meth) acrylic skeleton).
  • Examples of the carboxy group-containing monomer include ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having ethylenically unsaturated bonds) such as (meth) acrylic acid and crotonic acid; fumaric acid, itaconic acid, maleic acid, and citraconic acid.
  • Etc. such as ethylenically unsaturated dicarboxylic acid (dicarboxylic acid having an ethylenically unsaturated bond); the anhydride of the ethylenically unsaturated dicarboxylic acid; (meth) acrylic acid carboxyalkyl ester such as 2-carboxyethyl methacrylate. ..
  • acrylic monomer having a functional group a hydroxyl group-containing monomer or a carboxy group-containing monomer is preferable, and a hydroxyl group-containing monomer is more preferable.
  • acrylic monomer having a functional group constituting the acrylic polymer (a11) one kind may be used alone, or two or more kinds may be used in combination. When there are two or more kinds of acrylic monomers having a functional group constituting the acrylic polymer (a11), the combination and ratio thereof can be arbitrarily selected.
  • acrylic monomer having no functional group examples include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, and n- (meth) acrylate.
  • examples of the acrylic monomer having no functional group include alkoxyalkyls such as methoxymethyl (meth) acrylate, methoxyethyl (meth) acrylate, ethoxymethyl (meth) acrylate, and ethoxyethyl (meth) acrylate.
  • alkoxyalkyls such as methoxymethyl (meth) acrylate, methoxyethyl (meth) acrylate, ethoxymethyl (meth) acrylate, and ethoxyethyl (meth) acrylate.
  • (meth) acrylic acid esters having a non-crosslinkable tertiary amino group such as (meth) acrylic acid N, N-dimethylaminoethyl, (meth) acrylic acid N, N-dimethylaminopropyl and the like can also be mentioned.
  • acrylic monomer having no functional group constituting the acrylic polymer (a11) one type may be used alone, or two or more types may be used in combination.
  • acrylic polymer (a11) one type may be used alone, or two or more types may be used in combination.
  • non-functional acrylic monomers constituting the acrylic polymer (a11) their combinations and ratios can be arbitrarily selected.
  • non-acrylic monomer examples include olefins such as ethylene and norbornene; vinyl acetate; styrene and the like.
  • non-acrylic monomer constituting the acrylic polymer (a11) one type may be used alone, or two or more types may be used in combination.
  • the combination and ratio thereof can be arbitrarily selected.
  • the ratio (content) of the amount of the constituent unit derived from the acrylic monomer having a functional group to the total mass of the constituent units constituting the polymer is preferably 0.1 to 50. It is by mass, more preferably 1 to 40% by mass, still more preferably 3 to 30% by mass.
  • the content of the group can be easily adjusted to a preferable range in the degree of curing of the protective layer 40.
  • acrylic polymer (a11) constituting the acrylic resin (a1-1) one type may be used alone, or two or more types may be used in combination.
  • the number of types of the acrylic polymer (a11) constituting the acrylic resin (a1-1) is two or more, the combination and ratio thereof can be arbitrarily selected.
  • the content of the acrylic resin (a1-1) is preferably 1 to 60% by mass, more preferably 3 to 50% by mass, based on the total amount of the active ingredient of the energy ray-curable resin composition (20a-2-1). %, More preferably 5 to 40% by mass.
  • the energy ray-curable compound (a12) is one or more selected from the group consisting of an isocyanate group, an epoxy group, and a carboxy group as a group capable of reacting with the functional group of the acrylic polymer (a11).
  • the one having an isocyanate group is preferable, and the one having an isocyanate group as the group is more preferable.
  • the energy ray-curable compound (a12) has an isocyanate group as the group, the isocyanate group easily reacts with the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the functional group.
  • the energy ray-curable compound (a12) preferably has 1 to 5 energy ray-curable groups in one molecule, and more preferably 1 to 2 energy ray-curable groups.
  • Examples of the energy ray-curable compound (a12) include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, and 1,1- (bisacryloyloxymethyl) ethyl.
  • Isocyanate Acryloyl monoisocyanate compound obtained by reaction of diisocyanate compound or polyisocyanate compound with hydroxyethyl (meth) acrylate; Obtained by reaction of diisocyanate compound or polyisocyanate compound, polyol compound and hydroxyethyl (meth) acrylate Examples thereof include acryloyl monoisocyanate compounds.
  • the energy ray-curable compound (a12) is preferably 2-methacryloyloxyethyl isocyanate.
  • the energy ray-curable compound (a12) constituting the acrylic resin (a1-1) may be used alone or in combination of two or more.
  • the energy ray-curable compound (a12) constituting the acrylic resin (a1-1) is two or more kinds, the combination and ratio thereof can be arbitrarily selected.
  • the ratio of the content of the energy ray-curable group derived from the energy ray-curable compound (a12) to the content of the functional group derived from the acrylic polymer (a11) is , Preferably 20 to 120 mol%, more preferably 35 to 100 mol%, still more preferably 50 to 100 mol%.
  • the content ratio is in such a range, the adhesive strength of the protective layer 40 after curing becomes higher. Therefore, it is possible to more easily suppress the film peeling of the protective layer 40 as the protective layer.
  • the energy ray-curable compound (a12) is a monofunctional compound (having one group in one molecule)
  • the upper limit of the content ratio is 100 mol%, but the energy.
  • the linearly curable compound (a12) is a polyfunctional compound (having two or more of the groups in one molecule)
  • the upper limit of the content ratio may exceed 100 mol%.
  • the weight average molecular weight (Mw) of the polymer (a1) is preferably 100,000 to 2,000,000, more preferably 300,000 to 1,500,000.
  • the polymer (a1) is any of the above-mentioned monomers described as constituting the acrylic polymer (a11).
  • a monomer having a group that reacts with the cross-linking agent may be polymerized and cross-linked at the group that reacts with the cross-linking agent, or may be derived from the energy ray-curable compound (a12).
  • the group that reacts with the functional group may be crosslinked.
  • the polymer (a1) may be used alone or in combination of two or more.
  • the combination and the ratio thereof can be arbitrarily selected.
  • Examples of the energy ray-curable group of the compound (a2) having an energy ray-curable group having a weight average molecular weight of 100 to 80,000 include a group containing an energy ray-curable double bond, and preferred ones thereof. , (Meta) acryloyl group, vinyl group and the like.
  • the compound (a2) is not particularly limited as long as it satisfies the above conditions, but has a low molecular weight compound having an energy ray-curable group, an epoxy resin having an energy ray-curable group, and an energy ray-curable group.
  • Examples include phenolic resin.
  • examples of the low molecular weight compound having an energy ray-curable group include polyfunctional monomers or oligomers, and acrylate compounds having a (meth) acryloyl group are preferable.
  • examples of the acrylate compound include 2-hydroxy-3- (meth) acryloyloxypropyl methacrylate, polyethylene glycol di (meth) acrylate, propoxylated ethoxylated bisphenol A di (meth) acrylate, and 2,2-bis [4-.
  • Bifunctional (meth) acrylate tris (2- (meth) acryloxyethyl) isocyanurate, ⁇ -caprolactone-modified tris- (2- (meth) acryloxyethyl) isocyanurate, ethoxylated glycerintri (meth) acrylate, penta.
  • the compound (a2) has a weight average molecular weight of preferably 100 to 30,000, more preferably 300 to 10,000.
  • the compound (a2) may be used alone or in combination of two or more.
  • the combination and the ratio thereof can be arbitrarily selected.
  • polymer (b) having no energy ray-curable group examples include acrylic polymers, phenoxy resins, urethane resins, polyesters, rubber resins, and acrylic urethane resins.
  • the polymer (b) is preferably an acrylic polymer (hereinafter, may be abbreviated as "acrylic polymer (b-1)").
  • the acrylic polymer (b-1) may be a known one, and may be, for example, a homopolymer of one kind of acrylic monomer or a copolymer of two or more kinds of acrylic monomers. May be good. Further, the acrylic polymer (b-1) is a copolymer of one or more kinds of acrylic monomers and one or more kinds of monomers other than the acrylic monomers (non-acrylic monomers). May be.
  • acrylic monomer constituting the acrylic polymer (b-1) examples include (meth) acrylic acid alkyl ester, (meth) acrylic acid ester having a cyclic skeleton, and glycidyl group-containing (meth) acrylic acid ester. Examples thereof include hydroxyl group-containing (meth) acrylic acid esters and substituted amino group-containing (meth) acrylic acid esters.
  • Examples of the (meth) acrylic acid alkyl ester include methyl (meth) acrylic acid, ethyl (meth) acrylic acid, n-propyl (meth) acrylic acid, isopropyl (meth) acrylic acid, and n-butyl (meth) acrylic acid.
  • Examples of the (meth) acrylic acid ester having a cyclic skeleton include (meth) acrylic acid cycloalkyl esters such as (meth) acrylic acid isobornyl and (meth) acrylic acid dicyclopentanyl; and (meth) acrylic acid benzyl and the like.
  • (Meta) Acrylic acid cycloalkenyloxyalkyl such as (meth) Acrylic acid dicyclopentenyloxyethyl ester Ester; etc.
  • Examples of the glycidyl group-containing (meth) acrylic acid ester include glycidyl (meth) acrylic acid.
  • Examples of the hydroxyl group-containing (meth) acrylic acid ester include hydroxymethyl (meth) acrylic acid, 2-hydroxyethyl (meth) acrylic acid, 2-hydroxypropyl (meth) acrylic acid, and 3-hydroxy (meth) acrylic acid. Examples thereof include propyl, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate.
  • Examples of the substituted amino group-containing (meth) acrylic acid ester include (meth) acrylic acid N-methylaminoethyl and the like.
  • non-acrylic monomer constituting the acrylic polymer (b-1) examples include olefins such as ethylene and norbornene; vinyl acetate; styrene; and the like.
  • Examples of the polymer (b) having no energy ray-curable group, which is at least partially crosslinked by a cross-linking agent include those in which the reactive functional group in the polymer (b) reacts with the cross-linking agent. ..
  • the reactive functional group may be appropriately selected depending on the type of the cross-linking agent and the like, and is not particularly limited.
  • examples of the reactive functional group include a hydroxyl group, a carboxy group, an amino group and the like, and among these, a hydroxyl group having high reactivity with an isocyanate group is preferable. ..
  • the reactive functional group include a carboxy group, an amino group, an amide group and the like, and among these, a carboxy group having high reactivity with an epoxy group is used. preferable. However, in terms of preventing corrosion of circuits of semiconductor wafers and semiconductor chips, the reactive functional group is preferably a group other than the carboxy group.
  • Examples of the polymer (b) having a reactive functional group and not an energy ray-curable group include those obtained by polymerizing at least a monomer having a reactive functional group.
  • the acrylic polymer (b-1) if one or both of the acrylic monomer and the non-acrylic monomer mentioned as the monomers constituting the polymer is used, those having a reactive functional group may be used. good.
  • examples of the polymer (b) having a hydroxyl group as a reactive functional group include those obtained by polymerizing a hydroxyl group-containing (meth) acrylic acid ester, and other than the above-mentioned polymer (b) mentioned above. Examples thereof include acrylic monomers and non-acrylic monomers obtained by polymerizing a monomer in which one or more hydrogen atoms are substituted with the reactive functional group.
  • the ratio (content) of the amount of the structural unit derived from the monomer having the reactive functional group to the total mass of the constituent units constituting the polymer (b) is preferably 1. It is about 20% by mass, more preferably 2 to 10% by mass. When the ratio is in such a range, the degree of crosslinking in the polymer (b) is in a more preferable range.
  • the weight average molecular weight (Mw) of the polymer (b) having no energy ray-curable group is preferably from the viewpoint that the film-forming property of the energy ray-curable resin composition (20a-2-1) becomes better. It is 10,000 to 2,000,000, more preferably 100,000 to 1,500,000.
  • polymer (b) having no energy ray-curable group one type may be used alone, or two or more types may be used in combination.
  • the combination and ratio thereof can be arbitrarily selected.
  • Examples of the energy ray-curable resin composition (20a-2-1) include those containing either or both of the polymer (a1) and the compound (a2).
  • the energy ray-curable resin composition (20a-2-1) contains the compound (a2)
  • the polymer (b) having no energy ray-curable group is also contained.
  • the energy ray-curable resin composition (20a-2-1) does not contain the compound (a2) and contains both the polymer (a1) and the polymer (b) having no energy ray-curable group. You may be doing it.
  • the energy ray-curable resin composition (20a-2-1) contains a polymer (a1), a compound (a2), and a polymer (b) having no energy ray-curable group
  • the compound (a2) The content of the polymer (a1) is preferably 10 to 400 parts by mass, and more preferably 30 to 350 parts by mass with respect to 100 parts by mass of the total content of the polymer (a1) and the polymer (b) having no energy ray-curable group. It is a department.
  • the total content of the energy ray-curable component (a) and the polymer (b) having no energy ray-curable group is based on the total amount of the active components of the energy ray-curable resin composition (20a-2-1). It is preferably 5 to 90% by mass, more preferably 10 to 80% by mass, and even more preferably 20 to 70% by mass. When the content of the energy ray-curable component is in such a range, the energy ray-curable property of the energy ray-curable resin film (20a-2) becomes better.
  • the energy ray curable resin composition (20a-2-1) contains a thermosetting component, a photopolymerization initiator, a filler, a coupling agent, a cross-linking agent, and a general purpose, depending on the purpose. It may contain one or more selected from the group consisting of additives.
  • the energy ray-curable resin film (20a-2) formed by using the energy ray-curable resin composition (20a-2-1) containing an energy ray-curable component and a thermosetting component can be obtained. By heating, the adhesive force to the adherend is improved, and the strength of the protective layer 40 formed from the energy ray-curable resin film (20a-2) is also improved.
  • thermosetting component, the photopolymerization initiator, the filler, the coupling agent, the cross-linking agent, and the general-purpose additive in the energy ray-curable resin composition (20a-2-1) are thermosetting resin compositions, respectively.
  • thermosetting component In the energy ray curable resin composition (20a-2-1), one type of thermosetting component, photopolymerization initiator, filler, coupling agent, cross-linking agent and general-purpose additive is used alone. Alternatively, two or more kinds may be used in combination. When two or more kinds are used in combination, the combination and ratio thereof can be arbitrarily selected.
  • the contents of the thermosetting component, the photopolymerization initiator, the filler, the coupling agent, the cross-linking agent, and the general-purpose additive in the energy ray-curable resin composition (20a-2-1) are appropriately adjusted according to the purpose. It does not have to be limited.
  • the energy ray-curable resin composition (20a-2-1) is preferably one containing a solvent because its handleability is improved by dilution.
  • the solvent contained in the energy ray-curable resin composition (20a-2-1) include the same solvents as those in the thermosetting resin composition (20a-1-1).
  • seeds may be used alone, or two or more kinds may be used in combination. When two or more kinds are used in combination, the combination and ratio thereof can be arbitrarily selected.
  • the energy ray-curable resin composition (20a-2-1) has a non-curable component other than the above-mentioned energy ray-curable component, as in the case of the thermosetting resin film (20a-1) described above.
  • the component, that is, the curing accelerator (C) and the like can be contained in an appropriate amount.
  • the energy ray-curable resin composition (20a-2-1) can be obtained by blending each component for constituting the energy ray-curable resin composition (20a-2-1).
  • the order of addition of each component at the time of blending is not particularly limited, and two or more kinds of components may be added at the same time.
  • the solvent may be mixed with any compounding component other than this solvent and diluted in advance, or any compounding component other than the solvent may be used in advance.
  • the solvent may be used by mixing with these compounding components without diluting.
  • the method of mixing each component at the time of blending is not particularly limited, and from known methods such as a method of rotating a stirrer or a stirring blade to mix; a method of mixing using a mixer; a method of adding ultrasonic waves to mix. It may be selected as appropriate.
  • the temperature and time at the time of addition and mixing of each component are not particularly limited as long as each compounding component is not deteriorated, and may be appropriately adjusted, but the temperature is preferably 15 to 30 ° C.
  • the support sheet 30a functions as a support for supporting the curable resin 20a.
  • the support sheet 30a may be composed of only the support base material 31, or may be a laminate of the support base material 31 and the pressure-sensitive adhesive layer 33, and may include the support base material 31 and the buffer layer 32 (intermediate layer).
  • the pressure-sensitive adhesive layer 33 may be laminated in this order.
  • a laminate in which the support base material 31, the buffer layer 32 (intermediate layer), and the pressure-sensitive adhesive layer 33 are laminated in this order is suitable for use as a backgrind sheet.
  • the support base material 31 included in the support sheet 30a, the pressure-sensitive adhesive layer 33 and the buffer layer 32 (intermediate layer) that the support sheet 30a may have will be described.
  • the supporting base material is in the form of a sheet or a film, and examples of the constituent material thereof include the following various resins.
  • the resin constituting the supporting base material include polyethylene such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resin.
  • Polyethylene other than polyethylene such as: ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-norbornene copolymer and other ethylene-based copolymers.
  • polyester copolymer polymer obtained using ethylene as a monomer
  • vinyl chloride resin such as polyvinyl chloride and vinyl chloride copolymer (resin obtained using vinyl chloride as a monomer)
  • polystyrene polycycloolefin Polymers such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalenedicarboxylate, all aromatic polyesters in which all constituent units have an aromatic cyclic group; two or more kinds Examples of the above-mentioned polyester copolymer; poly (meth) acrylic acid ester; polyurethane; polyurethane acrylate; polyimide; polyamide; polycarbonate; fluororesin; polyacetal; modified polyphenylene oxide; polyphenylene sulfide; polysulfone; polyether ketone and the like.
  • examples of the resin constituting the supporting base material include polymer alloys such as a mixture of the polyester and other resins.
  • the polymer alloy of the polyester and the resin other than the polyester preferably has a relatively small amount of the resin other than the polyester.
  • the resin constituting the supporting base material is, for example, a crosslinked resin obtained by cross-linking one or more of the above-exemplified resins; one or two of the above-exemplified resins. Modified resins such as ionomers using seeds or higher can also be mentioned.
  • the resin constituting the support base material one type may be used alone, or two or more types may be used in combination. When two or more kinds of resins constituting the support base material are used, the combination and ratio thereof can be arbitrarily selected.
  • the supporting base material may be only one layer (single layer) or may be two or more layers.
  • the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited.
  • the thickness of the supporting base material is preferably 5 to 1,000 ⁇ m, more preferably 10 to 500 ⁇ m, still more preferably 15 to 300 ⁇ m, still more preferably 20 to 150 ⁇ m.
  • the "thickness of the supporting base material” means the thickness of the entire supporting base material, and for example, the thickness of the supporting base material composed of a plurality of layers is the total of all the layers constituting the supporting base material. Means the thickness of.
  • the supporting base material has a high accuracy of thickness, that is, a material in which variation in thickness is suppressed regardless of the site.
  • a material having a high accuracy of thickness that can be used to form such a supporting base material, for example, polyethylene, a polyolefin other than polyethylene, polyethylene terephthalate, and ethylene-vinyl acetate co-weight. Coalescence and the like can be mentioned.
  • the supporting base material contains various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers). May be.
  • the supporting base material may be transparent, opaque, colored depending on the purpose, or may have another layer vapor-deposited.
  • the curable resin film (x) is an energy ray-curable resin film (20a-2) and the pressure-sensitive adhesive layer is an energy-curable pressure-sensitive adhesive layer, the supporting substrate transmits energy rays. It is preferable to make it.
  • the supporting base material can be manufactured by a known method.
  • a supporting base material containing a resin can be produced by molding a resin composition containing the resin.
  • the pressure-sensitive adhesive layer is in the form of a sheet or a film and contains a pressure-sensitive adhesive.
  • the pressure-sensitive adhesive include an acrylic resin (a pressure-sensitive adhesive made of a resin having a (meth) acryloyl group), a urethane-based resin (a pressure-sensitive adhesive made of a resin having a urethane bond), and a rubber-based resin (a resin having a rubber structure).
  • acrylic resin a pressure-sensitive adhesive made of a resin having a (meth) acryloyl group
  • a urethane-based resin a pressure-sensitive adhesive made of a resin having a urethane bond
  • a rubber-based resin a resin having a rubber structure.
  • silicone resin silicone resin (adhesive made of resin having siloxane bond), epoxy resin (adhesive made of resin having epoxy group), polyvinyl ether, adhesive resin such as polycarbonate and the like.
  • an acrylic resin is preferable.
  • the "adhesive resin” is a concept including both a resin having adhesiveness and a resin having adhesiveness, and for example, the resin itself is not limited to having adhesiveness. It also includes a resin that exhibits adhesiveness when used in combination with other components such as additives, and a resin that exhibits adhesiveness due to the presence of a trigger such as heat or water.
  • the pressure-sensitive adhesive layer may be only one layer (single layer) or may be two or more layers.
  • the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.
  • the thickness of the pressure-sensitive adhesive layer is preferably 1 to 1000 ⁇ m, more preferably 5 to 500 ⁇ m, and even more preferably 10 to 100 ⁇ m.
  • the "thickness of the pressure-sensitive adhesive layer” means the thickness of the entire pressure-sensitive adhesive layer, and for example, the thickness of the pressure-sensitive adhesive layer composed of a plurality of layers is the sum of all the layers constituting the pressure-sensitive adhesive layer. Means the thickness of.
  • the pressure-sensitive adhesive layer may be formed by using an energy ray-curable pressure-sensitive adhesive or may be formed by using a non-energy ray-curable pressure-sensitive adhesive.
  • the pressure-sensitive adhesive layer formed by using the energy ray-curable pressure-sensitive adhesive can easily adjust the physical properties before and after curing.
  • the buffer layer (intermediate layer) is in the form of a sheet or a film, and the constituent material thereof may be appropriately selected depending on the intended purpose and is not particularly limited.
  • the buffer layer (intermediate layer) may be used.
  • Preferred constituent materials include urethane (meth) acrylate and the like because they have high unevenness-following property and the adhesiveness of the cushioning layer (intermediate layer) is further improved.
  • the buffer layer may be only one layer (single layer), or may be two or more layers.
  • the buffer layer (intermediate layer) is a plurality of layers, the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited.
  • the thickness of the buffer layer (intermediate layer) can be appropriately adjusted according to the height of the bumps on the surface of the semiconductor to be protected, but is preferably 50 because the influence of the bumps having a relatively high height can be easily absorbed. It is ⁇ 600 ⁇ m, more preferably 70 to 500 ⁇ m, still more preferably 80 to 400 ⁇ m.
  • the "thickness of the buffer layer (intermediate layer)" means the thickness of the entire buffer layer (intermediate layer), and for example, the thickness of the buffer layer (intermediate layer) composed of a plurality of layers is the buffer layer. It means the total thickness of all the layers constituting (intermediate layer).
  • the protective layer forming laminate 30 can be manufactured by sequentially laminating the above-mentioned layers so as to have a corresponding positional relationship.
  • the pressure-sensitive adhesive layer 33 or the buffer layer 32 intermediate layer
  • the pressure-sensitive adhesive layer 33 or the buffer layer 32 can be laminated by applying the composition for forming (intermediate layer) and drying it as necessary, or by irradiating it with energy rays.
  • the coating method include a spin coating method, a spray coating method, a bar coating method, a knife coating method, a roll coating method, a roll knife coating method, a blade coating method, a die coating method, and a gravure coating method.
  • thermosetting resin composition (20a) is further laminated on the pressure-sensitive adhesive layer 33. It is possible to directly form the curable resin 20a by applying 1-1) or the energy ray curable resin composition (20a-2-1).
  • the pressure-sensitive adhesive layer 33 is further laminated on the buffer layer 32 (intermediate layer) already laminated on the support base material 31, the pressure-sensitive adhesive composition is applied on the buffer layer 32 (intermediate layer). It is possible to work directly to form the pressure-sensitive adhesive layer 33.
  • the composition is further applied on the layer formed from the composition to form a new layer. Is possible to form.
  • the layer to be laminated afterwards is formed in advance on another release film using the composition, and the side of the formed layer in contact with the release film is It is preferable to form a laminated structure of two continuous layers by laminating the exposed surface on the opposite side with the exposed surface of the remaining layers that have already been formed. At this time, it is preferable that the composition is applied to the peeled surface of the peeling film.
  • the release film may be removed as necessary after the laminated structure is formed.
  • step (E1) the semiconductor chips are individually placed on the coating sheet so that at least one of the bump and the bump forming surface is covered with the coating sheet. The details are as described in the first embodiment.
  • the step (A) is a step of forming a shield layer on a semiconductor chip in which the bump forming surface of the semiconductor wafer provided with the bump is protected by a protective layer made of a cured product of a curable resin, and is a step of forming the bump and bump forming surface.
  • a shield layer is formed on at least a part of the portion exposed from the coating sheet of the semiconductor chip in a state where at least one of the above is coated on the coating sheet. The details are as described in the first embodiment.
  • ⁇ Process (B) >> In the step (B), after forming the shield layer on the semiconductor chip, the coating sheet is peeled off from at least one of the bump and the semiconductor wafer. The details are as described in the first embodiment.
  • the shield layer is formed on the semiconductor chip whose bump forming surface of the semiconductor wafer is covered with the protective layer, the conductive material for forming the shield layer is on the bump forming surface side of the semiconductor wafer. Even if it wraps around and penetrates between the semiconductor wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump forming surface. Further, in the fourth embodiment, since the bump forming surface of the semiconductor wafer is covered with the protective layer, the bump embedding amount of the coating sheet can be reduced, and the coating sheet is peeled off from the bumped wafer. It is easy and can suppress the generation of adhesive residue at the time of peeling.
  • FIG. 14 shows a schematic diagram of the fifth embodiment.
  • step (C') step (step (C4), step (C5), step (C6), step (CY), step (C7), step (C-).
  • the fifth embodiment is different from the fourth embodiment in that the step (E2) and the step (F) are performed instead of the above-mentioned step (E1).
  • step (E2) and step (F) will be described in detail.
  • step (E2) the semiconductor chips are collectively placed on the covering sheet so that at least one of the bump and the bump forming surface is covered with the covering sheet.
  • the step (E2) can be performed in the same manner as the step (E1) except that the semiconductor chips are collectively mounted instead of mounting the semiconductor chips individually.
  • the coating sheet on which the semiconductor chip is placed is expanded.
  • the coating sheet may be expanded in the arrangement direction of the semiconductor chips, or the coating sheet may be expanded radially.
  • the coating sheet can be expanded by using, for example, an expanding device or the like.
  • the expansion tape may be expanded in the arrangement direction of the semiconductor chips, or the expansion tape may be expanded radially.
  • Step (I): Placement on the expanded expansion tape The process of transferring the placed semiconductor chip to the coating sheet
  • the shield layer is formed on the semiconductor chip whose bump forming surface of the semiconductor wafer is covered with the protective layer, the conductive material for forming the shield layer is on the bump forming surface side of the semiconductor wafer. Even if it wraps around and penetrates between the semiconductor wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump forming surface. Further, in the fifth embodiment, since the bump forming surface of the semiconductor wafer is covered with the protective layer, the bump embedding amount of the coating sheet can be reduced, and the coating sheet is peeled off from the bumped wafer. It is easy and can suppress the generation of adhesive residue at the time of peeling.
  • FIG. 15 shows a schematic diagram of the sixth embodiment.
  • step (C') step (C4), step (C5), step (C6), step (CY), step (C7), step (C-).
  • the sixth embodiment is different from the fifth embodiment in that the above-mentioned step (E2) is not performed and the step (C8) in the step (C') is different.
  • the differences from the fifth embodiment (step (C8)) will be described in detail.
  • Step (C8) In the step (C8), the bumped wafer on which the protective layer is formed is cut from the side opposite to the bump forming surface to be individualized, and a semiconductor chip in which the bump forming surface is protected by the protective layer is obtained. Cutting can be appropriately performed by adopting conventionally known methods such as blade dicing and laser dicing. In the step (C8) of the sixth embodiment, instead of cutting the bumped wafer on which the protective layer is formed from the bump forming surface side and separating the wafers into individual pieces, the bumped wafer on which the protective layer is formed is bump-formed.
  • step (C8) of the fifth embodiment that is, the step (C8) of the fourth embodiment
  • a semiconductor is formed by placing a bumped wafer on which a protective layer is formed on a coating sheet and then cutting the bumped wafer on which a protective layer is formed from the side opposite to the bump forming surface to separate them into pieces.
  • the step of transferring the chip (step (E2)) can be omitted.
  • the shield layer is formed on the semiconductor chip whose bump forming surface of the semiconductor wafer is covered with the protective layer, the conductive material for forming the shield layer is on the bump forming surface side of the semiconductor wafer. Even if it wraps around and penetrates between the semiconductor wafer and the coating sheet, it is possible to sufficiently suppress the formation of the conductive material on the bump forming surface. Further, in the sixth embodiment, since the bump forming surface of the semiconductor wafer is covered with the protective layer, the bump embedding amount of the coating sheet can be reduced, and the coating sheet is peeled off from the bumped wafer. It is easy and can suppress the generation of adhesive residue at the time of peeling.
  • a shield layer is formed on a semiconductor chip in which a bump-forming surface of a semiconductor wafer is covered with a resin layer (that is, a protective layer) made of a cured product of a curable resin. Therefore, even if the conductive material for forming the shield layer wraps around to the bump forming surface side of the semiconductor wafer, it is possible to sufficiently suppress the formation of the conductive material on the bump forming surface. Further, according to the method for manufacturing a semiconductor device of the present invention, since the bump forming surface of the semiconductor wafer is covered with a resin layer (that is, a protective layer) made of a cured product of a curable resin, the bumps of the coating sheet are embedded. The amount can be reduced, and the generation of adhesive residue when the coating sheet is peeled from the bumped wafer can be suppressed.
  • a resin layer that is, a protective layer
  • the bump forming surface was observed with an optical microscope (manufactured by KEYENCE, model name: VHX-1000). As a result, no conductive material was present on the bump forming surface and the bump of the semiconductor chip.
  • a protective layer forming laminate having a laminated structure in which a support sheet and a curable resin layer are laminated on a bump forming surface of a wafer for manufacturing a semiconductor chip is provided with a curable resin layer. It was pasted as a sticking surface. The details will be described below.
  • composition for forming a curable resin layer The following polymer component (A) 9.9% by mass, epoxy resin (B1) 37.9% by mass, epoxy resin (B2) 24.7% by mass, thermosetting agent (B3) 18.3% by mass, curing accelerator A curable resin having a solid content concentration of 55% by mass by dissolving or dispersing 0.2% by mass of (C) and 9.0% by mass of the filler (D) in a methyl ethyl ketone and stirring at 23 ° C. A layer-forming composition was obtained.
  • Eslek (registered trademark) B having a structural unit represented by the following formulas (i) -1, (i) -2 and (i) -3. BL-10 ”, weight average molecular weight 25,000, glass transition temperature 59 ° C.
  • l 1 is 68 to 74 mol%
  • m 1 is 1 to 3 mol%
  • n 1 is about 28 mol%.
  • l 1 , m 1 and n 1 are the content ratios (mol%) of the respective constituent units.
  • ⁇ Manufacturing of curable resin layer> The composition for forming a curable resin layer obtained above on the peeled surface of a peeled film (“SP-PET38131” manufactured by Lintec Corporation, thickness 38 ⁇ m) in which one side of a polyethylene terephthalate film is peeled by a silicone treatment. was applied and dried by heating at 120 ° C. for 2 minutes to obtain a curable resin layer having a thickness of 30 ⁇ m. The thickness of the curable resin layer was measured using a contact-type thickness gauge (manufactured by Teclock Co., Ltd., product name "PG-02").
  • a sticking tape (“E-8510HR” manufactured by Lintec Corporation) is used as a support sheet, and the curable resin layer on the above-mentioned release film is stuck to the sticking target layer of the sticking tape to form a support sheet and curability.
  • a laminated body for forming a protective layer was obtained, in which the resin layer and the release film were laminated in this order in this order of thickness.
  • the release film is removed, and the exposed surface (exposed surface) of the curable resin layer is crimped to the bump forming surface of the 8-inch ⁇ bump wafer to form a semiconductor chip.
  • a laminated body for forming a protective layer was attached to the bump forming surface of the manufacturing wafer.
  • the laminated body for forming the protective layer is attached using a pasting device (roller type laminator, "RAD-3510 F / 12" manufactured by Lintec Corporation), a table temperature of 90 ° C., a pasting speed of 2 mm / sec, and a pasting pressure of 0. This was performed while heating the curable resin layer under the condition of 5.5 MPa.
  • the bump height is 210 ⁇ m
  • the bump width is 250 ⁇ m
  • the distance between adjacent bumps is 400 ⁇ m.
  • a laminated structure was obtained in which a laminated body for forming a protective layer was attached to a bump forming surface of a wafer for manufacturing a semiconductor chip.
  • the surface of the semiconductor wafer opposite to the bump forming surface was ground with the protective layer forming laminate formed on the bump forming surface.
  • the bump forming surface side of the wafer for forming a semiconductor chip to which the laminate for forming a protective layer is attached is fixed on a chuck table, and the back surface of the wafer for forming a semiconductor chip is a grinding machine (“DGP8761” manufactured by DISCO Co., Ltd.). Was ground using.
  • the thickness of the wafer for manufacturing semiconductor chips after grinding was 200 ⁇ m.
  • a BG tape remover (“RAD-3010F / 12” manufactured by Lintec Corporation) is used to peel off the support sheet from the protective layer forming laminate to form a bump forming surface.
  • a curable resin layer was formed.
  • the curable resin layer formed on the bump forming surface of the wafer for manufacturing semiconductor chips was cured to form a protective layer.
  • the curable resin layer is heat-treated in a pressure oven (RAD-9100 manufactured by Lintec Co., Ltd.) under heating conditions of temperature: 130 ° C., time: 2 hours, and furnace pressure: 0.5 MPa. Was done by.
  • a step (CX) before being subjected to the next step (C3), an exposure process is performed in which the protective layer covering the top of the bump is removed to expose the top of the bump to expose the top of the bump.
  • the plasma etching process plasma cleaning was performed under the following conditions. ⁇ Processing gas: Methane tetrafluoride ⁇ Flow rate of processing gas: 40cm 3 / min -Processing pressure: 100 Pa ⁇ Output: 250W ⁇ Processing time: 15 minutes ⁇ Purge: 1 time
  • a multi-function wafer mounter (“RAD-2510F / 12” manufactured by Lintec Corporation) is used to place a wafer for manufacturing a semiconductor chip on which a protective layer is formed on a dicing tape. Then, the chips were separated by cutting from the bump forming surface side to obtain a semiconductor chip in which the bump forming surface was protected by a protective layer.
  • step (E1) the semiconductor chips are individually placed on the coating sheet using the coating sheet forming laminate prepared as described below, and the bumps and the bump forming surface are coated. It was covered with a sheet for use.
  • composition for forming embedded layer Solution (solid content 33.6% by mass) of an acrylic copolymer (weight average molecular weight (Mw) 400,000) consisting of 90 parts by mass of n-butyl (BA) acrylate and 10 parts by mass of acrylate (AAc) 100 2-methacryloyloxy in an acrylic copolymer consisting of 62 parts by mass of n-butyl (BA) acrylate, 10 parts by mass of methyl methacrylate (MMA) and 28 parts by mass of 2-hydroxyethyl (HEA) acrylate.
  • an acrylic copolymer weight average molecular weight (Mw) 400,000
  • composition for forming adhesive layer 2-Methacryloxyethyl 2-methacryloyloxyethyl with respect to an acrylic copolymer consisting of 74 parts by mass of n-butyl (BA) acrylate, 20 parts by mass of methyl methacrylate (MMA) and 6 parts by mass of 2-hydroxyethyl acrylate (HEA).
  • BA n-butyl
  • MMA methyl methacrylate
  • HOA 2-hydroxyethyl acrylate
  • This pressure-sensitive adhesive main agent To 100 parts by mass of this pressure-sensitive adhesive main agent, 0.5 parts by mass of tolylene diisocyanate (manufactured by Toyochem Co., Ltd., product name "BHS-8515", solid content concentration: 37.5%) was added as a cross-linking agent to 30 parts by mass.
  • the composition for forming the pressure-sensitive adhesive layer was prepared by stirring for 1 minute.
  • a pressure-sensitive adhesive layer having a thickness of 20 ⁇ m was produced by heating and drying at ° C. for 1 minute.
  • a laminate for forming a coating sheet was produced as follows. The details are as follows. The composition for forming an embedded layer is applied to the peeled surface of a release film (“SP-PET38131” manufactured by Lintec Corporation, thickness 38 ⁇ m) in which one side of a polyethylene terephthalate film is peeled by silicone treatment, and 1 at 100 ° C.
  • SP-PET38131 manufactured by Lintec Corporation, thickness 38 ⁇ m
  • SP-PET382150 manufactured by Lintec Corporation, thickness 38 ⁇ m
  • the surfaces from which the peeled films laminated of the embedded layer were peeled off were bonded to each other to prepare an embedded layer having a thickness of 100 ⁇ m.
  • the embedded layers were laminated and laminated to prepare an embedded layer having a thickness of 300 ⁇ m.
  • An embedded layer having a thickness of 300 ⁇ m was bonded to a pressure-sensitive adhesive layer having a thickness of 20 ⁇ m to produce a laminated body 81 for forming a coating sheet having a viscoelastic layer 82 having a thickness of 320 ⁇ m as shown in FIG.
  • the release film 85 on the side of the embedded layer 83 of the coating sheet forming laminate 81 is peeled off to form a polyethylene terephthalate (PET) film (product name "Cosmo Shine A4100", thickness 50 ⁇ m, manufactured by Toyobo Co., Ltd.) as a base material.
  • PET polyethylene terephthalate
  • the bump-forming surface was pressure-bonded to the coating sheet from which the release film 86 had been peeled off at a press pressure (load 1.1 MPa), a press time of 40 s, and a heating time of 50 ° C.
  • a shield layer made of copper was formed on the semiconductor chip whose bump forming surface was protected by a protective layer made of a cured product of a curable resin under the following conditions.
  • ⁇ Target Copper
  • Method DC magnetron sputtering
  • Application method DC500W
  • Base material heating 150 °C -Carrier gas: Argon-Film film pressure 3.4 Pa
  • step (B) the semiconductor chip with the shield layer was picked up, the coating sheet was peeled off from the bump and the semiconductor wafer, and the semiconductor chip coated with the shield layer was taken out.
  • Example 2 In the first embodiment, as in the first embodiment, the step (C1-1), the step (C1-2), the step (C1-3), the step (C2), the step (CX), and the step (C3). , Step (E1), Step (A), Step (B) in this order, Step (C1-1), Step (C1-2), Step (C1-3), as in the second embodiment. , Step (C2), Step (CX), Step (C3), Step (E2), Step (F), Step (A), Step (B), except that the steps were performed in this order. Similarly, a semiconductor device was manufactured and the bump forming surface was observed. As a result, no conductive material was present on the bump forming surface and the bump.
  • step (E2) and the process (F), which are different from the first embodiment, will be described in detail below.
  • step (E2) the semiconductor chips were collectively placed on the covering sheet so that the bumps and the bump forming surface were covered with the covering sheet.
  • the step (E2) was carried out in the same manner as the above-mentioned step (E1) except that the semiconductor chips were collectively mounted instead of mounting the semiconductor chips individually.
  • PET polyethylene terephthalate
  • a polyester-based polyurethane elastomer sheet manufactured by Seadam Co., Ltd., product.
  • the name "Higres DUS202”, thickness 50 ⁇ m) was used instead of the polyethylene terephthalate (PET) film of Example 1 (product name "Cosmo Shine A4100", thickness 50 ⁇ m, manufactured by Toyobo Co., Ltd.)
  • a polyester-based polyurethane elastomer sheet manufactured by Seadam Co., Ltd., product.
  • the name "Higres DUS202", thickness 50 ⁇ m) was used.
  • step (F) an expander was used to expand the coating sheet on which the semiconductor chips were placed in the arrangement direction of the semiconductor chips.
  • Example 3 In the first embodiment, as in the first embodiment, the step (C1-1), the step (C1-2), the step (C1-3), the step (C2), the step (CX), and the step (C3). , Step (E1), Step (A), Step (B) in this order, Step (C1-1), Step (C1-2), Step (C1-3), as in the third embodiment. , Step (C2), Step (CX), Step (C3), Step (F), Step (A), Step (B), except that the steps were performed in this order. Was manufactured, and the bump forming surface was observed. As a result, no conductive material was present on the bump forming surface and the bump.
  • step (C1-1), the step (C1-2), the step (C1-3), the step (C2), and the step (CX) are each performed in the same manner as in the first embodiment, and the step (C3) is performed.
  • step (C3) of the second embodiment that is, the step (C3) of the first embodiment, except that the bumped wafer on which the protective layer is formed is cut from the side opposite to the bump forming surface to be individualized.
  • steps (F), (A), and (B) were carried out in the same manner as in Example 2.
  • the coating sheet used in the second embodiment is used as the dicing tape, and the semiconductor wafer is provided so that the coating sheet as the dicing tape covers the bump forming surface.
  • the bump forming surface side was placed on a dicing tape (coating sheet).
  • Step (C4), step (C5), step (C6), step (CY), step (C7), step (CX), step (C8), step (E1). ), Step (A), and Step (B) were performed in this order. It will be described in detail below.
  • the bump forming surface was observed with an optical microscope (manufactured by KEYENCE, model name: VHX-1000). As a result, no conductive material was present on the bump forming surface and the bump.
  • a wafer for manufacturing a semiconductor chip was prepared in which a groove portion as a planned division line was formed on the bump forming surface without reaching the surface opposite to the bump forming surface.
  • a wafer for manufacturing a semiconductor chip a half-cut 12-inch silicon wafer (wafer thickness 775 ⁇ m) was prepared.
  • the width of the half-cut portion (width of the groove portion) of the silicon wafer was 200 ⁇ m, and the depth of the groove was 200 ⁇ m.
  • step (C5) the bump forming surface of the semiconductor chip manufacturing wafer was covered with the curable resin, and the curable resin was embedded in the groove formed in the semiconductor chip manufacturing wafer. The details will be described below.
  • the resin side was used as the sticking surface, and the sticking was performed while pressing under the following conditions.
  • -Attachment device Fully automatic vacuum bonding machine (manufactured by Lintec Corporation, product name "RAD-3810”) ⁇ Vacuum degree: 0.1 kPa -Attachment pressure 1: 10.00 kPa -Attachment pressure 2: 90.00 kPa ⁇ Pasting time: 60 sec -Attachment speed: 4 mm / sec -Attachment temperature: 100 ° C
  • the curable resin in the curable resin layer was produced by using a thermosetting resin composition. The components used in the preparation of the thermosetting resin composition are shown below.
  • Polymer component Polymer component: butyl acrylate (BA) 55 parts by mass, methyl acrylate (MA) 10 parts by mass, glycidyl methacrylate (GMA) 20 parts by mass and -2-hydroxyethyl acrylate (HEA) 15 parts by mass.
  • BA butyl acrylate
  • MA methyl acrylate
  • GMA glycidyl methacrylate
  • HOA -2-hydroxyethyl acrylate
  • Acrylic resin obtained by copolymerizing parts (weight average molecular weight 800,000, glass transition temperature ⁇ 28 ° C.).
  • thermosetting resin composition having a solid content concentration of 55% by mass.
  • the thermosetting resin composition obtained above is applied to the peeled surface of the peeled film (“SP-PET38131” manufactured by Lintec, 38 ⁇ m thick) in which one side of the polyethylene terephthalate film is peeled by the silicone treatment. Then, the film was dried at 100 ° C. for 2 minutes to prepare a thermosetting resin film having a thickness of 90 ⁇ m and having a thermosetting property as a curable resin.
  • the exposed surface of the curable resin is bonded to the exposed surface of the pressure-sensitive adhesive layer of the support sheet, and the support sheet, the curable resin, and the release film are laminated in this order in this order to form a laminate. Obtained.
  • this laminated body was attached to a wafer for manufacturing a semiconductor chip, the release film was peeled off from the laminated body to expose the curable resin and used.
  • a grinding machine (“DGP8761” manufactured by DISCO Corporation) was used to grind the back surface of the wafer for manufacturing semiconductor chips on the opposite side to the bump forming surface in a state where the laminate was attached. ..
  • a tape remover for BG (“RAD-3010F / 12” manufactured by Lintec Corporation) was used to peel off the support sheet from the laminate.
  • the curable resin was cured to obtain a wafer for manufacturing a semiconductor chip with a curable resin film as a protective layer.
  • the curable resin layer is heat-treated in a pressure oven (RAD-9100 manufactured by Lintec Co., Ltd.) under heating conditions of temperature: 130 ° C., time: 2 hours, and furnace pressure: 0.5 MPa. Was done by.
  • a step (CX) before being subjected to the next step (C8), an exposure process is performed in which the protective layer covering the top of the bump is removed to expose the top of the bump to expose the top of the bump.
  • the plasma etching process plasma cleaning was performed under the following conditions. ⁇ Processing gas: Methane tetrafluoride ⁇ Flow rate of processing gas: 40cm 3 / min -Processing pressure: 100 Pa ⁇ Output: 250W ⁇ Processing time: 15 minutes ⁇ Purge: 1 time
  • a multi-function wafer mounter (“RAD-2510F / 12” manufactured by Lintec Corporation) is used to place a wafer for manufacturing a semiconductor chip on which a protective layer is formed on a dicing tape.
  • step (E1), the step (A) and the step (B) were carried out in the same manner as in Example 1.
  • steps (C4) to (C8) are carried out in the same manner as in Example 4, respectively, and step (E2), step (F), step (A), and step (B) are carried out in the same manner as in Example 2. rice field.
  • Example 6 In the fourth embodiment, as in the fourth embodiment, the step (C4), the step (C5), the step (C6), the step (CY), the step (C7), the step (CX), and the step (C8). ), Step (E1), Step (A), and Step (B) in this order, as in the sixth embodiment, Step (C4), Step (C5), Step (C6), Step (C-). Similar to Example 4, except that the steps (Y), step (C7), step (CX), step (C8), step (F), step (A), and step (B) are performed in this order. A semiconductor device was manufactured and the bump forming surface was observed.
  • Example 3 the bumped wafer on which the protective layer was formed was cut from the side opposite to the bump forming surface and separated into individual pieces. As a result, no conductive material was present on the bump forming surface and the bump.
  • each of the steps (C4) to (CX) is carried out in the same manner as in Example 4, except that the step (C8) is cut from the side opposite to the bump forming surface to be individualized.
  • the same as the step (C8) of Example 5 that is, the step (C8) of Example 4) was carried out, and the steps (F), the step (A), and the step (B) were carried out in the same manner as in Example 5.
  • Example 6 the coating sheet used in Example 5 is used as the dicing tape, and the semiconductor wafer is provided so that the coating sheet as the dicing tape covers the bump forming surface.
  • the bump forming surface side was placed on a dicing tape (coating sheet).
  • the present invention can be used for manufacturing a semiconductor device or the like having a bump on the connection pad portion used in the flip chip mounting method.
  • the present invention can also be used for manufacturing packages, fan-outs, and the like.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
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Abstract

La présente invention concerne un procédé de production d'une puce à semi-conducteur qui permet d'empêcher un matériau conducteur destiné à former une couche de blindage de se former sur une surface de formation de bosses d'une tranche de semi-conducteur, même lorsque le matériau conducteur est passé du côté de la surface de formation de bosses. Le procédé de production d'un dispositif à semi-conducteur comprend l'étape (A). Étape (A) : Une étape de formation d'une couche de protection sur une puce à semi-conducteur dans laquelle une surface de formation de bosses d'une tranche de semi-conducteur qui est dotée de bosses est protégée par une couche de protection qui comprend un produit durci d'une résine durcissable, la couche de protection étant formée au niveau d'au moins en partie d'une section de la puce à semiconducteur qui n'est pas recouverte par une feuille de revêtement qui a été appliquée sur les bosses et/ou sur la surface de formation de bosses.
PCT/JP2021/002715 2020-05-18 2021-01-27 Procédé de production de dispositif à semi-conducteur WO2021235005A1 (fr)

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CN202180035591.4A CN115605980A (zh) 2020-05-18 2021-01-27 半导体装置的制造方法

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Citations (6)

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JP2015176950A (ja) * 2014-03-14 2015-10-05 株式会社ディスコ ウェーハの加工方法
JP2018113294A (ja) * 2017-01-10 2018-07-19 株式会社ディスコ 半導体デバイスチップ及び半導体デバイスチップの製造方法
WO2018143014A1 (fr) * 2017-02-02 2018-08-09 日立化成株式会社 Procédé de commande de composant électronique, composition de résine pour protection temporaire, et film de résine pour protection temporaire
WO2019017225A1 (fr) * 2017-07-20 2019-01-24 三井化学東セロ株式会社 Procédé de fabrication de dispositif électronique
WO2019017226A1 (fr) * 2017-07-20 2019-01-24 三井化学東セロ株式会社 Procédé de fabrication de dispositif électronique
US20200144120A1 (en) * 2018-11-06 2020-05-07 Disco Corporation Manufacturing method of semiconductor device with metal film

Family Cites Families (1)

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Publication number Priority date Publication date Assignee Title
DE102017213181A1 (de) 2017-07-31 2019-01-31 Carl Zeiss Smt Gmbh Optische Anordnung für EUV-Strahlung mit einer Abschirmung zum Schutz vor der Ätzwirkung eines Plasmas

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176950A (ja) * 2014-03-14 2015-10-05 株式会社ディスコ ウェーハの加工方法
JP2018113294A (ja) * 2017-01-10 2018-07-19 株式会社ディスコ 半導体デバイスチップ及び半導体デバイスチップの製造方法
WO2018143014A1 (fr) * 2017-02-02 2018-08-09 日立化成株式会社 Procédé de commande de composant électronique, composition de résine pour protection temporaire, et film de résine pour protection temporaire
WO2019017225A1 (fr) * 2017-07-20 2019-01-24 三井化学東セロ株式会社 Procédé de fabrication de dispositif électronique
WO2019017226A1 (fr) * 2017-07-20 2019-01-24 三井化学東セロ株式会社 Procédé de fabrication de dispositif électronique
US20200144120A1 (en) * 2018-11-06 2020-05-07 Disco Corporation Manufacturing method of semiconductor device with metal film

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