WO2021199233A1 - Élément à effet de magnétorésistance - Google Patents

Élément à effet de magnétorésistance Download PDF

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Publication number
WO2021199233A1
WO2021199233A1 PCT/JP2020/014736 JP2020014736W WO2021199233A1 WO 2021199233 A1 WO2021199233 A1 WO 2021199233A1 JP 2020014736 W JP2020014736 W JP 2020014736W WO 2021199233 A1 WO2021199233 A1 WO 2021199233A1
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layer
ferromagnetic layer
magnetic
magnetoresistive element
ferromagnetic
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PCT/JP2020/014736
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English (en)
Japanese (ja)
Inventor
鈴木　健司
心人 市川
勝之 中田
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Tdk株式会社
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Priority to PCT/JP2020/014736 priority Critical patent/WO2021199233A1/fr
Priority to US17/214,081 priority patent/US11728082B2/en
Publication of WO2021199233A1 publication Critical patent/WO2021199233A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H2/00—Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/258—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable using a galvano-magnetic device

Definitions

  • the present invention relates to a magnetoresistive element.
  • the magnetoresistive element is an element whose resistance value in the stacking direction changes due to the magnetoresistive effect.
  • the magnetoresistive element includes two ferromagnetic layers and a non-magnetic layer sandwiched between them.
  • a magnetoresistive element in which a conductor is used for the non-magnetic layer is called a giant magnetic resistance (GMR) element
  • a magnetoresistive element in which an insulating layer (tunnel barrier layer, barrier layer) is used for the non-magnetic layer is called a giant magnetic resistance (GMR) element.
  • GMR giant magnetic resistance
  • TMR tunnel magnetoresistive
  • the magnetoresistive sensor can be applied to various applications such as magnetic sensors, high-frequency components, magnetic heads, and non-volatile random access memory (MRAM).
  • Patent Document 1 describes a magnetoresistive element using MgAl 2 O 4 having a spinel-type crystal structure as a tunnel barrier layer.
  • Patent Document 2 describes that replacing Al of MgAl 2 O 4 with Ga lowers the barrier height of the tunnel barrier layer.
  • Ga has a low melting point and is difficult to target by itself. Therefore, for example, it is difficult to adjust the composition ratio of Al and Ga in Mg (Al, Ga) 2 O 4. Further, the Ga element easily diffuses into other layers, and the magnetoresistive change rate (MR ratio) of the magnetoresistive element becomes lower than the desired value, or RA becomes higher than the desired value.
  • MR ratio magnetoresistive change rate
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a magnetoresistive element having a low RA.
  • the present invention provides the following means for solving the above problems.
  • the magnetoresistive sensor according to the first aspect is a non-magnetic layer between the first ferromagnetic layer, the second ferromagnetic layer, and the first ferromagnetic layer and the second ferromagnetic layer.
  • the crystal structure of the non-magnetic layer is a spinel structure, and has Mg, Al, X, and O as elements constituting the spinel structure, and the X is composed of Ti, Pt, and W. One or more elements selected from the group.
  • the element represented by X may be at the A site or the B site of the spinel structure.
  • the non-magnetic layer may have a concentration distribution of X in the stacking direction.
  • the X on at least one of the first surface of the non-magnetic layer on the first ferromagnetic layer side and the second surface on the opposite side of the first surface.
  • the concentration of X may be higher than the average concentration of X in the non-magnetic layer.
  • the concentration of the X on the first surface and the second surface may be higher than the average concentration of the X on the non-magnetic layer.
  • the concentration of the X in the center of the stacking direction of the non-magnetic layer may be higher than the average concentration of the X in the non-magnetic layer.
  • the crystal structure of the nonmagnetic layer is the inverse spinel structure
  • space group of the crystal may be Imma or P4 1 22.
  • the magnetoresistive element according to the above aspect may further include an MgO layer between at least one of the first ferromagnetic layer and the second ferromagnetic layer and the non-magnetic layer. ..
  • an Mg—Al—O layer is further provided between at least one of the first ferromagnetic layer and the second ferromagnetic layer and the non-magnetic layer. You may prepare.
  • the X may be Ti.
  • x, y, and z are used as the composition ratios x, y, and z of Mg, Al, and Ti with respect to the total amount of Mg, Al, and Ti in the non-magnetic layer.
  • x ⁇ 7/12 and 3/12 ⁇ z in the region surrounded by 3/12 ⁇ x ⁇ 11/12, 0 ⁇ y ⁇ 7/12, 1/12 ⁇ z ⁇ 5/12. It may be in the area excluding the area to be filled.
  • the X may be Pt or W.
  • the magnetoresistive element according to the present invention has a low RA.
  • FIG. 1 is a cross-sectional view of the magnetoresistive element according to the first embodiment.
  • the direction in which each layer is laminated may be referred to as a stacking direction.
  • a direction that intersects the stacking direction and spreads each layer may be referred to as an in-plane direction.
  • the magnetoresistive element 10 shown in FIG. 1 includes a first ferromagnetic layer 1, a second ferromagnetic layer 2, and a non-magnetic layer 3.
  • the non-magnetic layer 3 is located between the first ferromagnetic layer 1 and the second ferromagnetic layer 2.
  • the magnetoresistive element 10 outputs a change in the relative angle between the magnetization of the first ferromagnetic layer 1 and the magnetization of the second ferromagnetic layer 2 as a resistance value change.
  • the magnetization of the second ferromagnetic layer 2 is easier to move than, for example, the magnetization of the first ferromagnetic layer 1.
  • the resistance value of the magnetoresistive element 10 changes as the direction of magnetization of the second ferromagnetic layer 2 changes with respect to the direction of magnetization of the first ferromagnetic layer 1.
  • the first ferromagnetic layer 1 may be referred to as a magnetization fixed layer
  • the second ferromagnetic layer 2 may be referred to as a magnetization free layer.
  • the first ferromagnetic layer 1 will be described as a magnetized fixed layer and the second ferromagnetic layer 2 will be described as a magnetized free layer, but this relationship may be reversed.
  • the difference in the ease of movement between the magnetization of the first ferromagnetic layer 1 and the magnetization of the second ferromagnetic layer 2 when a predetermined external force is applied is maintained between the first ferromagnetic layer 1 and the second ferromagnetic layer 2. It is caused by the difference in magnetic force.
  • the coercive force of the second ferromagnetic layer 2 becomes smaller than the coercive force of the first ferromagnetic layer 1.
  • an antiferromagnetic layer may be provided on the surface of the first ferromagnetic layer 1 opposite to the non-magnetic layer 3.
  • the coercive force of the first ferromagnetic layer 1 is further increased by the exchange bond acting between the first ferromagnetic layer 1 and the antiferromagnetic layer.
  • the antiferromagnetic layer is, for example, IrMn, PtMn, or the like.
  • a spacer layer may be provided on the first ferromagnetic layer 1 side and a third ferromagnetic layer may be provided on the antiferromagnetic layer side between the first ferromagnetic layer 1 and the antiferromagnetic layer.
  • the spacer layer contains, for example, at least one selected from the group consisting of Ru, Ir, Rh, Re, Cr, Zr, and Cu.
  • the thickness of the spacer is preferably 0.3 nm or more and 1.0 nm or less.
  • the first ferromagnetic layer 1 is, for example, closer to the substrate than the second ferromagnetic layer 2.
  • Each layer of the magnetoresistive element 10 is laminated on a substrate, for example.
  • the first ferromagnetic layer 1, which is closer to the substrate, is more likely to have higher crystallinity and more stable magnetization than the second ferromagnetic layer 2.
  • the first ferromagnetic layer 1 and the second ferromagnetic layer 2 include a ferromagnetic material.
  • a ferromagnetic material for example, one kind of metal selected from the group consisting of Cr, Mn, Co, Fe and Ni, and one kind of metal selected from these groups. Examples thereof include alloys containing the above, or alloys containing one or more metals selected from these and at least one or more elements of B, C, and N.
  • Fe or CoFe alloy has a high spin polarization rate, and when used for the first ferromagnetic layer 1 or the second ferromagnetic layer 2, the MR ratio of the magnetoresistive element 10 can be increased.
  • first ferromagnetic layer 1 and the second ferromagnetic layer 2 include Co—Fe, Co—Fe—B, Ni—Fe, Co—Ho alloy (CoHo 2 ), and Sm—Fe alloy (SmFe 12 ). Can be mentioned.
  • the first ferromagnetic layer 1 and the second ferromagnetic layer 2 may be a Whistler alloy.
  • the Whisler alloy has a high spin polarizability and can achieve a high MR ratio.
  • Heusler alloy contains an intermetallic compound with XYZ or X 2 YZ chemical composition.
  • X is a transition metal element or a noble metal element of Group Co, Fe, Ni, or Cu on the periodic table.
  • Y is a transition metal of Mn, V, Cr or Ti group, and the element species of X can also be selected.
  • Z is a typical element of groups III to V.
  • Co 2 FeSi, Co 2 FeGe, Co 2 FeGa, Co 2 MnSi, Co 2 Mn 1-a Fe a Al b Si 1-b , Co 2 FeGe 1-c Ga c and the like can be mentioned.
  • the Heusler alloy has a high spin polarizability and can increase the MR ratio of the magnetoresistive element 10.
  • the thickness is preferably 3 nm or less.
  • Vertical magnetic anisotropy is added to the first ferromagnetic layer 1 and the second ferromagnetic layer 2 at the interface with the non-magnetic layer 3. Since the effect of perpendicular magnetic anisotropy is attenuated by increasing the thickness of the first ferromagnetic layer 1 and the second ferromagnetic layer 2, the thickness of the first ferromagnetic layer 1 and the second ferromagnetic layer 2 is increased. The thinner one is preferable.
  • the non-magnetic layer 3 may be a conductor, a semiconductor, or an insulator.
  • the non-magnetic layer 3 is, for example, a tunnel barrier layer having an insulating property.
  • the crystal structure of the non-magnetic layer 3 is a spinel structure.
  • the spinel structure includes a normal spinel structure and a reverse spinel structure.
  • the normal spinel structure is represented by AB 2 O 4 and the reverse spinel structure is represented by B (AB) O 4 .
  • the inverted spinel structure is closer to the crystal structure of MgO than the normal spinel structure, and a high MR ratio can be realized.
  • the non-magnetic layer 3 has Mg, Al, X, and O as elements constituting the spinel structure.
  • X is one or more elements selected from the group consisting of Ti, Pt, and W.
  • X is, for example, Ti.
  • X is, for example, Pt or W.
  • X is less likely to diffuse into other layers even during annealing.
  • the element represented by X is, for example, at the A site or the B site of the spinel structure.
  • X is replaced with, for example, Mg or Al of Mg—Al—O.
  • Mg—Al—O is, for example, MgAl 2 O 4 .
  • X is Ti
  • X, y, z are the coordinate axes
  • x, y, z are, for example, 3/12 ⁇ x ⁇ 11/12, 0 ⁇ y ⁇ 7/12, 1/12 ⁇ z ⁇ 5/12. It is in the region excluding the region that satisfies x ⁇ 7/12 and 3/12 ⁇ z in the region surrounded by.
  • the composition of oxygen O is not limited to 1 as long as the spinel structure is not disrupted.
  • Space group of the crystals of the non-magnetic layer 3 is, for example, Imma or P4 1 22. Imma, P4 1 22, the high symmetry of the crystal.
  • the RA of the magnetoresistive element 10 decreases and the MR ratio increases.
  • the non-magnetic layer 3 has, for example, a distribution of the element concentration of X in the stacking direction. Oxygen elements are attracted to the portion where the element concentration of X is high, and the RA of the non-magnetic layer 3 is lowered.
  • the concentration of X on at least one of the first surface 3A and the second surface 3B is higher than the average concentration of X in the non-magnetic layer 3.
  • the concentration of X on the first surface 3A and the second surface 3B may be higher than the average concentration of X on the non-magnetic layer 3, for example.
  • the first surface 3A is the surface of the non-magnetic layer 3 on the first ferromagnetic layer 1 side.
  • the second surface 3B is a surface opposite to the first surface 3A and is a surface on the second ferromagnetic layer 2 side.
  • the band folding effect When the concentration of X on the first surface 3A or the second surface 3B becomes high, the band folding effect is suppressed.
  • the band folding effect occurs at the interface between layers with different grid spacing.
  • the band folding effect creates an additional conductive path, which causes a decrease in the MR ratio of the magnetoresistive element 10.
  • the concentration of X in the center of the non-magnetic layer 3 in the stacking direction may be higher than the average concentration of X in the non-magnetic layer 3.
  • the concentration of X in the center of the non-magnetic layer 3 in the stacking direction is high, the oxygen element is attracted toward the center of the metal layer at the time of manufacture, which is the non-magnetic layer 3.
  • the first ferromagnetic layer 1 and the second ferromagnetic layer 2 are suppressed from being oxidized at the time of manufacture, and the RA of the magnetoresistive element is lowered.
  • the composition analysis of each layer constituting the magnetoresistive element 10 can be performed using energy dispersive X-ray analysis (EDS). Further, by performing EDS line analysis, for example, the composition distribution of each material in the film thickness direction can be confirmed.
  • EDS energy dispersive X-ray analysis
  • the magnetoresistive element 10 is obtained by laminating each layer in order.
  • X has a high melting point of a simple substance.
  • Ga has a melting point of 30 ° C.
  • Ti has a melting point of 1668 ° C.
  • Pt has a melting point of 1768 ° C.
  • W has a melting point of 3422 ° C. Therefore, a single target of X can be used, and the composition ratio of the non-magnetic layer 3 can be easily adjusted.
  • the barrier height of the non-magnetic layer 3 is lowered because the non-magnetic layer 3 contains the X element.
  • the RA of the magnetoresistive element 10 is lowered.
  • the lattice consistency with the first ferromagnetic layer 1 and the second ferromagnetic layer 2 is improved as compared with the case where MgO is used for the non-magnetic layer 3, and the magnetoresistive sensor 10 The MR ratio is improved.
  • the magnetoresistive element 10 may have a layer other than the first ferromagnetic layer 1, the second ferromagnetic layer 2, and the non-magnetic layer 3.
  • FIG. 3 is a cross-sectional view of the magnetoresistive element 11 according to the first modification.
  • the magnetoresistive element 11 shown in FIG. 3 is different from the magnetoresistive element 10 shown in FIG. 1 in that the MgO layer 4 is further provided between the first ferromagnetic layer 1 and the non-magnetic layer 3.
  • the same configurations as those of the magnetoresistive element 10 shown in the first embodiment in the first modification are designated by the same reference numerals and the description thereof will be omitted.
  • the MgO layer 4 is between the first ferromagnetic layer 1 and the non-magnetic layer 3.
  • the MgO layer 4 is in contact with, for example, the first ferromagnetic layer 1.
  • MgO has a high self-orientation of crystals, and the MgO layer 4 crystallizes even at a low temperature.
  • the crystallized MgO layer 4 promotes crystallization of adjacent layers.
  • the MgO layer 4 shown in FIG. 3 promotes the crystallization of the first ferromagnetic layer 1 and the non-magnetic layer 3.
  • the MgO layer 4 is shown between the first ferromagnetic layer 1 and the non-magnetic layer 3, but the MgO layer 4 is composed of the second ferromagnetic layer 2 and the non-magnetic layer 3. It may be between the first ferromagnetic layer 1 and the non-magnetic layer 3 and between the second ferromagnetic layer 2 and the non-magnetic layer 3.
  • FIG. 4 is a cross-sectional view of the magnetoresistive element 12 according to the second modification.
  • the magnetoresistive element 12 shown in FIG. 4 is different from the magnetoresistive element 11 shown in FIG. 3 in that the Mg—Al—O layer 5 is further provided between the first ferromagnetic layer 1 and the non-magnetic layer 3. different.
  • the same configuration as the magnetoresistive element 11 shown in the first modification is designated by the same reference numerals and the description thereof will be omitted.
  • the Mg—Al—O layer 5 is between the first ferromagnetic layer 1 and the non-magnetic layer 3.
  • the Mg—Al—O layer 5 is, for example, between the non-magnetic layer 3 and the MgO layer 4.
  • the Mg—Al—O layer 5 is an oxide of Mg and Al, for example, MgAl 2 O 4 .
  • MgAl 2 O 4 has higher lattice consistency with the ferromagnetic layer than MgO.
  • the lattice mismatch between the first ferromagnetic layer 1 and the non-magnetic layer 3 can be reduced.
  • the RA of the magnetoresistive element 12 decreases.
  • FIG. 4 shows an example in which the Mg—Al—O layer 5 is on the first ferromagnetic layer 1 side of the non-magnetic layer 3, but the Mg—Al—O layer 5 is the second non-magnetic layer 3. It may be on the ferromagnetic layer 2 side.
  • the above-mentioned magnetoresistive elements 10, 11 and 12 can be used for various purposes.
  • the magnetoresistive elements 10, 11 and 12 can be applied to, for example, a magnetic head, a magnetic sensor, a magnetic memory, a high frequency filter and the like.
  • the magnetoresistive element 10 is used as the magnetoresistive element, but the magnetoresistive element is not limited to this.
  • FIG. 5 is a cross-sectional view of the magnetic recording element 100 according to Application Example 1.
  • FIG. 5 is a cross-sectional view of the magnetic recording element 100 cut along the stacking direction.
  • the magnetic recording element 100 has a magnetic head MH and a magnetic recording medium W.
  • one direction in which the magnetic recording medium W extends is the X direction
  • the direction perpendicular to the X direction is the Y direction.
  • the XY plane is parallel to the main plane of the magnetic recording medium W.
  • the direction connecting the magnetic recording medium W and the magnetic head MH and perpendicular to the XY plane is defined as the Z direction.
  • the air bearing surface (Air Bearing Surface: medium facing surface) S faces the surface of the magnetic recording medium W.
  • the magnetic head MH moves in the directions of arrow + X and arrow ⁇ X along the surface of the magnetic recording medium W at a position separated from the magnetic recording medium W by a certain distance.
  • the magnetic head MH has a magnetoresistive element 10 that acts as a magnetic sensor and a magnetic recording unit (not shown).
  • the resistance measuring device 21 measures the resistance value of the magnetoresistive element 10 in the stacking direction.
  • the magnetic recording unit applies a magnetic field to the recording layer W1 of the magnetic recording medium W to determine the direction of magnetization of the recording layer W1. That is, the magnetic recording unit performs magnetic recording of the magnetic recording medium W.
  • the magnetoresistive element 10 reads the information on the magnetization of the recording layer W1 written by the magnetic recording unit.
  • the magnetic recording medium W has a recording layer W1 and a backing layer W2.
  • the recording layer W1 is a portion for performing magnetic recording
  • the backing layer W2 is a magnetic path (magnetic flux passage) for returning the magnetic flux for writing to the magnetic head MH again.
  • the recording layer W1 records magnetic information as the direction of magnetization.
  • the second ferromagnetic layer 2 of the magnetoresistive element 10 is, for example, a magnetization free layer. Therefore, the second ferromagnetic layer 2 exposed on the air bearing surface S is affected by the magnetization recorded on the recording layer W1 of the opposing magnetic recording medium W.
  • the direction of magnetization of the second ferromagnetic layer 2 is oriented in the + z direction due to the influence of the magnetization of the recording layer W1 in the + z direction.
  • the directions of magnetization of the first ferromagnetic layer 1 and the second ferromagnetic layer 2, which are the fixed magnetization layers, are parallel.
  • the magnetoresistive element 10 according to the present embodiment has a low RA and low power consumption.
  • the shape of the magnetoresistive element 10 of the magnetic head MH is not particularly limited.
  • the first ferromagnetic layer 1 may be installed at a position away from the magnetic recording medium W in order to avoid the influence of the leakage magnetic field of the magnetic recording medium W on the first ferromagnetic layer 1 of the magnetoresistive sensor 10. ..
  • FIG. 6 is a cross-sectional view of the magnetic recording element 101 according to Application Example 2.
  • FIG. 6 is a cross-sectional view of the magnetic recording element 101 cut along the stacking direction.
  • the magnetic recording element 101 includes a magnetoresistive element 10, a power supply 22, and a measuring unit 23.
  • the power supply 22 gives a potential difference in the stacking direction of the magnetoresistive element 10.
  • the power supply 22 is, for example, a DC power supply.
  • the measuring unit 23 measures the resistance value of the magnetoresistive element 10 in the stacking direction.
  • a current flows in the stacking direction of the magnetoresistive element 10.
  • the current spin-polarizes when passing through the first ferromagnetic layer 1 and becomes a spin-polarized current.
  • the spin polarization current reaches the second ferromagnetic layer 2 via the non-magnetic layer 3.
  • the magnetization of the second ferromagnetic layer 2 receives a spin transfer torque (STT) due to a spin polarization current, and the magnetization is reversed.
  • STT spin transfer torque
  • the resistance value in the stacking direction of the magnetoresistive element 10 changes.
  • the resistance value in the stacking direction of the magnetoresistive element 10 is read out by the measuring unit 23. That is, the magnetic recording element 101 shown in FIG. 6 is a spin transfer torque (STT) type magnetic recording element.
  • STT spin transfer torque
  • the magnetic recording element 101 shown in FIG. 6 has a large MR ratio and a low RA of the magnetoresistive element 10, it can be driven with low power consumption and can accurately record data.
  • FIG. 7 is a cross-sectional view of the magnetic recording element 102 according to Application Example 3.
  • FIG. 7 is a cross-sectional view of the magnetic recording element 102 cut along the stacking direction.
  • the magnetic recording element 102 includes a magnetoresistive element 10, a wiring 6, a power supply 22, and a measuring unit 23.
  • the wiring 6 is in contact with, for example, the first ferromagnetic layer 1 of the magnetoresistive element 10.
  • the power supply 22 is connected to both ends of the wiring 6.
  • the measuring unit 23 is connected to the second ferromagnetic layer 2 and one end of the wiring 6.
  • the first ferromagnetic layer 1 is a magnetization free layer
  • the second ferromagnetic layer 2 is a magnetization fixed layer.
  • the wiring 6 has a function of generating a spin current by the spin Hall effect when a current flows.
  • a spin Hall effect is generated by the spin-orbit interaction.
  • the spin Hall effect is a phenomenon in which a moving spin is bent in a direction orthogonal to the current flow direction.
  • the spin Hall effect creates uneven distribution of spins in the wiring 6 and induces a spin current in the thickness direction of the wiring 6. The spin is injected from the wiring 6 into the first ferromagnetic layer 1 by the spin current.
  • the wiring 6 includes any one of a metal, an alloy, an intermetal compound, a metal boride, a metal carbide, a metal siliceate, and a metal phosphoride having a function of generating a spin current by the spin Hall effect when an electric current flows.
  • the wiring 6 contains a non-magnetic metal having an atomic number of 39 or more having d electrons or f electrons in the outermost shell.
  • the spin injected into the first ferromagnetic layer 1 gives spin-orbit torque (SOT) to the magnetization of the first ferromagnetic layer 1.
  • the first ferromagnetic layer 1 receives spin-orbit torque (SOT) and reverses its magnetization.
  • SOT spin-orbit torque
  • the resistance value in the lamination direction of the magnetoresistive element 10 changes.
  • the resistance value in the stacking direction of the magnetoresistive element 10 is read out by the measuring unit 23. That is, the magnetic recording element 102 shown in FIG. 7 is a spin-orbit torque (SOT) type magnetic recording element.
  • the magnetic recording element 102 shown in FIG. 7 has a large MR ratio and a low RA of the magnetoresistive element 10, it can be driven with low power consumption and can accurately record data.
  • FIG. 8 is a cross-sectional view of the domain wall moving element (domain wall moving magnetic recording element) according to Application Example 4.
  • the domain wall moving element 103 has a magnetoresistive effect element 10, a first magnetization fixing layer 24, and a second magnetization fixing layer 25.
  • the magnetoresistive element 10 has a first ferromagnetic layer 1, a second ferromagnetic layer 2, and a non-magnetic layer 3.
  • the direction in which the first ferromagnetic layer 1 extends is the X direction
  • the direction perpendicular to the X direction is the Y direction
  • the direction perpendicular to the XY plane is the Z direction.
  • the first magnetization fixing layer 24 and the second magnetization fixing layer 25 are connected to the first end and the second end of the first ferromagnetic layer 1.
  • the first end and the second end sandwich the second ferromagnetic layer 2 and the non-magnetic layer 3 in the X direction.
  • the first ferromagnetic layer 1 is a layer capable of magnetically recording information by changing the internal magnetic state.
  • the first ferromagnetic layer 1 has a first magnetic domain 1A and a second magnetic domain 1B inside.
  • the magnetization of the first ferromagnetic layer 1 at a position overlapping the first magnetization fixed layer 24 or the second magnetization fixed layer 25 in the Z direction is fixed in one direction.
  • the magnetization at the position where it overlaps with the first magnetization fixing layer 24 in the Z direction is fixed in the + Z direction, for example, and the magnetization at the position where it overlaps with the second magnetization fixing layer 25 in the Z direction is fixed in the ⁇ Z direction, for example.
  • the first ferromagnetic layer 1 can have a domain wall DW inside.
  • the domain wall moving element 103 can record data in multiple values or continuously depending on the position of the domain wall DW of the first ferromagnetic layer 1.
  • the data recorded in the first ferromagnetic layer 1 is read out as a change in the resistance value of the domain wall moving element 103 when a read-out current is applied.
  • Second magnetization M 2 of the ferromagnetic layer 2 is, for example, the same direction as the magnetization M 1A of the first magnetic domain 1A (parallel), a magnetization M 1B opposite direction of the second magnetic domain 1B (antiparallel).
  • the domain wall DW moves by passing a write current in the X direction of the first ferromagnetic layer 1 or applying an external magnetic field.
  • a write current for example, a current pulse
  • electrons flow in the ⁇ X direction opposite to the current, so that the domain wall DW moves in the ⁇ X direction.
  • a current flows from the first magnetic domain 1A to the second magnetic domain 1B
  • the spin-polarized electrons in the second magnetic domain 1B reverse the magnetization M 1A of the first magnetic domain 1A.
  • magnetization M 1A of the first magnetic domain 1A is magnetization reversal, the domain wall DW is moved in the -X direction.
  • the magnetic wall moving element 103 shown in FIG. 8 has a large MR ratio and a low RA of the magnetoresistive element 10, it can be driven with low power consumption and can accurately record data.
  • FIG. 9 is a schematic view of the high frequency device 104 according to Application Example 5.
  • the high-frequency device 104 includes a magnetoresistive element 10, a DC power supply 26, an inductor 27, a capacitor 28, an output port 29, and wirings 30 and 31.
  • the wiring 30 connects the magnetoresistive element 10 and the output port 29.
  • the wiring 31 branches from the wiring 30 and reaches the ground G via the inductor 27 and the DC power supply 26.
  • Known DC power supplies 26, inductors 27, and capacitors 28 can be used.
  • the inductor 27 cuts the high frequency component of the current and allows the invariant component of the current to pass through.
  • the capacitor 28 passes a high frequency component of the current and cuts an invariant component of the current.
  • the inductor 27 is arranged in a portion where the flow of high-frequency current is desired to be suppressed, and the capacitor 28 is arranged in a portion where the flow of DC current is desired to be suppressed.
  • the magnetization of the second ferromagnetic layer 2 undergoes an aging motion.
  • the magnetization of the second ferromagnetic layer 2 vibrates strongly when the frequency of the high-frequency current or high-frequency magnetic field applied to the second ferromagnetic layer 2 is close to the ferromagnetic resonance frequency of the second ferromagnetic layer 2. 2 It does not vibrate very much at a frequency far from the ferromagnetic resonance frequency of the ferromagnetic layer 2. This phenomenon is called a ferromagnetic resonance phenomenon.
  • the resistance value of the magnetoresistive element 10 changes due to the vibration of the magnetization of the second ferromagnetic layer 2.
  • the DC power supply 26 applies a DC current to the magnetoresistive element 10.
  • the direct current flows in the stacking direction of the magnetoresistive element 10.
  • the direct current flows to the ground G through the wirings 30 and 31 and the magnetoresistive element 10.
  • the potential of the magnetoresistive element 10 changes according to Ohm's law.
  • a high-frequency signal is output from the output port 29 in response to a change in the potential of the magnetoresistive element 10 (change in resistance value).
  • the high-frequency device 104 shown in FIG. 9 is driven with low power consumption because the magnetoresistive element 10 has a large MR ratio, can transmit a high-frequency signal with a large output, and has a low RA.
  • Example 1 As Example 1, the magnetoresistive element 12 shown in FIG. 4 was manufactured.
  • the non-magnetic layer 3 of the magnetoresistive element 12 was Mg—Al—Ti—O.
  • the MR ratio and RA of each magnetoresistive element were determined by changing the Ti concentration.
  • the base layer was Ta / Ru
  • the cap layer was Ru / Ta / Ru
  • the first ferromagnetic layer 1 and the second ferromagnetic layer 2 were Co—Fe—B alloys.
  • the magnetoresistive element 12 according to Example 1 was manufactured by the following procedure. First, a Ta / Ru base layer was formed on an amorphous substrate by sputtering. Next, a first ferromagnetic layer having the above composition was formed.
  • MgO, Mg—Al—O, Ti, the second ferromagnetic layer, and the cap layer were laminated in this order on the first ferromagnetic layer and annealed.
  • MgO becomes MgO layer 4.
  • a part of Mg—Al—O becomes the Mg—Al—O layer 5.
  • Mg—Al—Ti—O corresponds to the non-magnetic layer 3.
  • the cap layer is Ru / Ta / Ru.
  • Example 2 is different from Example 1 in that the method for producing the tunnel barrier layer is changed.
  • Mg—Al—O, Ti, the second ferromagnetic layer, and the cap layer were laminated in this order on the first ferromagnetic layer and annealed.
  • a part of Mg—Al—O becomes the Mg—Al—O layer 5.
  • the tunnel barrier film thickness was the same as in Example 1.
  • Example 3 is different from Example 1 in that the method for producing the tunnel barrier layer is changed. MgO, Mg—Al—O, Ti, the second ferromagnetic layer, and the cap layer were laminated in this order on the first ferromagnetic layer and annealed. MgO becomes MgO layer 4. The film thickness of Mg—Al—O was adjusted so that all Mg—Al—O was combined with Ti to form Mg—Al—Ti—O. In order to properly evaluate RA, the tunnel barrier film thickness was the same as in Example 1.
  • the MR ratio and RA of the manufactured magnetoresistive element 12 were measured.
  • the MR ratio is determined by monitoring the voltage applied to the magnetoresistive element 12 with a voltmeter while sweeping a magnetic field from the outside to the magnetoresistive element 10 with a constant current flowing in the stacking direction of the magnetoresistive element. , The change in the resistance value of the magnetoresistive sensor 12 was measured. The resistance value when the magnetization directions of the first ferromagnetic layer 1 and the second ferromagnetic layer 2 are parallel, and the resistance when the magnetization directions of the first ferromagnetic layer 1 and the second ferromagnetic layer 2 are antiparallel. The value was measured, and the resistance value obtained was calculated from the following formula. The MR ratio was measured at 300 K (room temperature).
  • MR ratio (%) (R AP -R P) / R P ⁇ 100
  • R P is first ferromagnetic layer 1 and the resistance value of the second if the magnetization orientation of the ferromagnetic layer 2 are parallel
  • R AP is the first ferromagnetic layer 1 and the second ferromagnetic layer 2 magnetized This is the resistance value when the directions of are antiparallel.
  • RA is first ferromagnetic layer 1 and the resistor R P of the second if the magnetization direction of the ferromagnetic layer 2 are parallel, was determined by the product of the in-plane direction of the area A of the magnetoresistive element 12.
  • FIG. 10 shows the measurement results of Examples 1 to 3.
  • the horizontal axis of FIG. 10 is the Ti concentration in the non-magnetic layer.
  • the vertical axis of FIG. 10 is the MR ratio and RA of the magnetoresistive element.
  • RA decreased significantly as the concentration of Ti in the non-magnetic layer increased.
  • the decrease in the MR ratio of the magnetoresistive element was small.

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  • Chemical & Material Sciences (AREA)
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  • Power Engineering (AREA)
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  • Mram Or Spin Memory Techniques (AREA)

Abstract

Élément à effet de magnétorésistance comprenant une première couche ferromagnétique, une seconde couche ferromagnétique, et une couche non-magnétique disposée entre la première couche ferromagnétique et la seconde couche ferromagnétique. La couche non magnétique a une structure cristalline de spinelle et comprend, comme éléments constituant la structure de spinelle, du Mg, de l'Al, X et de l'O, X représentant un ou plusieurs éléments choisis dans le groupe constitué par le Ti, le Pt et le W.
PCT/JP2020/014736 2020-03-31 2020-03-31 Élément à effet de magnétorésistance WO2021199233A1 (fr)

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