WO2021196945A1 - 监测晶圆及监测系统 - Google Patents

监测晶圆及监测系统 Download PDF

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Publication number
WO2021196945A1
WO2021196945A1 PCT/CN2021/078511 CN2021078511W WO2021196945A1 WO 2021196945 A1 WO2021196945 A1 WO 2021196945A1 CN 2021078511 W CN2021078511 W CN 2021078511W WO 2021196945 A1 WO2021196945 A1 WO 2021196945A1
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WIPO (PCT)
Prior art keywords
pressure
wafer
monitoring
monitoring wafer
detection device
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PCT/CN2021/078511
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English (en)
French (fr)
Inventor
吴潇
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长鑫存储技术有限公司
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Priority to US17/433,305 priority Critical patent/US20230142868A1/en
Publication of WO2021196945A1 publication Critical patent/WO2021196945A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Definitions

  • the embodiments of the present application relate to the field of semiconductors, and in particular, to a monitoring wafer and a monitoring system.
  • the electrostatic chuck is an important part of the semiconductor etching machine.
  • the electrostatic chuck is often used to carry the wafer to achieve a fixing effect.
  • the same process is usually performed in multiple chambers of a machine.
  • Some embodiments of this application provide a monitoring wafer and a monitoring system.
  • the monitoring wafer can detect the pressure on the surface of the monitoring wafer facing the wafer carrier, and then determine the wafer carrier based on the detected pressure data Whether there is a problem with the load-bearing performance.
  • a monitoring wafer including: a substrate, the substrate has a first surface, the first surface is used to face the wafer carrier and be opposite to the wafer carrier Fixed; pressure detection device, the pressure detection device is located on the substrate, used to obtain the pressure on the first surface.
  • the substrate has a second surface opposite to the first surface, the substrate has a groove extending from the second surface to the first surface, and the pressure detection device is embedded in the groove
  • the monitoring wafer also includes: a protective layer located on the second surface for sealing the pressure detection device.
  • the monitoring wafer further includes an adhesive layer, the material of the adhesive layer includes a silicone resin adhesive for bonding the substrate and the protective layer.
  • the monitoring wafer further includes an induction coil connected to the pressure detection device and used for supplying power to the pressure detection device.
  • the monitoring wafer further includes a power supply device, which is respectively connected to the pressure detection device and the induction coil, and is used for receiving charging of the induction coil and for supplying power to the pressure detection device.
  • the monitoring wafer further includes a processor, which is connected to the pressure detection device and is configured to store the pressure data obtained by the pressure detection device.
  • the processor is also configured to send the stored pressure data through the induction coil.
  • the pressure detection device includes a signal amplifier and at least one pressure sensor, and the signal amplifier is used to amplify the pressure obtained by the pressure sensor.
  • the distance between the surface of the pressure sensor facing the first surface and the first surface is greater than or equal to 0.2 mm.
  • the pressure detection device includes a plurality of pressure sensors, the pressure sensors are used to detect the pressure at the position, the first surface includes a middle area and an outer area surrounding the middle area, and the middle area includes at least The pressure sensor includes at least one pressure sensor in the outer area.
  • the outer area includes a plurality of ring-shaped sub-areas sequentially surrounded, and each of the ring-shaped sub-areas includes at least one pressure sensor.
  • the first surface is a round surface, and the number of the pressure sensors is 33.
  • Some embodiments of the application also provide a monitoring system, including: at least one monitoring wafer as described above; a wafer transfer box, the wafer transfer box is used to carry the monitoring wafer, and is used to obtain The pressure data; electronic equipment, the electronic equipment is connected to the wafer transfer box, the electronic equipment is used to obtain and analyze the pressure data.
  • the monitoring wafer includes an induction coil and a power supply device connected to the induction coil
  • the wafer transfer box includes an adapter coil
  • the induction coil and the adapter coil can be inducted each other
  • the crystal The round transfer box charges the power supply device in the monitoring wafer through the adapter coil and the induction coil.
  • the pressure detection device detects the pressure of the substrate toward the first surface of the wafer carrier. After the wafer carrier carries the monitoring wafer, the loading of the wafer carrier can be analyzed based on the pressure data obtained by the pressure detection device. performance.
  • the pressure detection device is embedded in the groove in the substrate and sealed with a protective layer on the second surface. This helps to prevent the pressure detection device from being damaged during the detection process, thereby ensuring the validity of the detected pressure data. sex.
  • the first surface includes an inner area and an outer area, and at least one pressure sensor is included in the inner area or the outer area. In this way, when the wafer carrier fails, it can be detected based on the pressure sensors at different positions. The area where the pressure data analysis fails.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a monitoring wafer provided by an embodiment of the present application
  • FIGS. 2 to 4 are schematic diagrams of the structure of a monitoring wafer provided by an embodiment of the application.
  • FIG. 5 is a schematic diagram of the distribution of a pressure detection device provided by an embodiment of the application.
  • FIG. 6 is a schematic diagram of monitoring wafer pressure changes provided by an embodiment of the application.
  • FIG. 7 is a schematic diagram of the pressure distribution of a monitored wafer provided by an embodiment of the application.
  • FIG. 8 is a schematic diagram of monitoring wafer pressure distribution provided by another embodiment of this application.
  • Fig. 9 is a monitoring system provided by another embodiment of the application.
  • embodiments of the present application provide a monitoring wafer, a fault location method, and a monitoring system.
  • a pressure detection device is provided on the substrate of the monitoring wafer to detect the substrate facing the first surface of the wafer carrier. Pressure, so, after the corresponding process is finished, if it is found that the process product does not meet the requirements or there is an unexpected deviation in the process during the process, the load-bearing performance of the wafer carrier can be analyzed based on the pressure data detected by the pressure detection device whether it is passed.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a monitoring wafer provided by an embodiment of the present application.
  • the wafer carrier 2 carries a monitoring wafer 1
  • the monitoring wafer 1 has a first surface 111 facing the wafer carrier 2 and fixed to the wafer carrier 2.
  • the wafer carrier plate 2 is connected to the negative electrode 21 of the high-voltage power supply 20.
  • the wafer carrier plate 2 includes a dielectric layer 23 with a DC electrode 231 in the dielectric layer 23.
  • a polarized charge will be generated on the surface of the dielectric layer 23, and the polarized charge will generate an electric field, which will further promote the monitoring wafer placed on the wafer carrier 2 Polarized charges are generated on the surface 1, and the charges distributed on the first surface 111 are opposite in polarity to the charges distributed on the surface of the dielectric layer 23 close to the monitoring wafer 1. In this way, the wafer carrier 2 adsorbs and fixes the monitoring wafer 1.
  • the wafer carrier 2 is also connected to the current transformer 22 in the high-voltage power supply 20.
  • the current transformer 22 is used to detect and monitor the parameters of the current 24 generated by the charge movement in the wafer 1.
  • the high-voltage power supply 20 can adjust the output current according to the current parameters detected by the current transformer 22, thereby adjusting the wafer carrier plate 2 Adsorption capacity.
  • the adsorption capacity of the wafer carrier 2 to the monitoring wafer 1 is related to the cleanliness of the first surface 111 of the monitoring wafer 1.
  • the adsorption force of the wafer carrier 2 is likely to be insufficient As a result, the position accuracy of the monitoring wafer 1 cannot be guaranteed and products that meet the preset requirements cannot be formed.
  • the size of the monitoring wafer 1 should be the same as the size of the wafer used in the actual process. In this way, it is beneficial to ensure the validity of the pressure data obtained by the monitoring wafer 1.
  • the high-voltage power source 20 is a DC power source; in other embodiments, the power source is a low-current DC power source, and the positive electrode of the power source is connected to the DC electrode in the dielectric layer.
  • FIGS. 2 to 4 are schematic diagrams of the structure of a monitoring wafer provided by an embodiment of the application.
  • the substrate 11 has a second surface 112 opposite to the first surface, and the substrate 11 has a groove 113 extending from the second surface 112 to the first surface.
  • the groove 113 is used to embed a pressure detection device;
  • a monitoring wafer 1 also includes a protective layer 14, which is used to seal the pressure detection device to avoid damage to the pressure detection device due to the manufacturing process, so as to ensure that the pressure detection device has better detection accuracy.
  • the material of the protective layer 14 includes yttrium oxide or yttrium oxyfluoride, which is used to prevent the pressure detection device from being damaged by plasma generated by the manufacturing process or externally injected plasma; in addition, the monitoring wafer also includes coating
  • the adhesive layer 125 on the surface of the substrate 11 is used to bond the substrate 11 and the protective layer 14.
  • the material of the adhesive layer 125 includes a silicone resin adhesive, which can play a good adhesion effect after curing.
  • Silicone resin adhesives are made by mixing silicone resin (such as polymethylphenylsiloxane) with certain inorganic fillers (mica, asbestos, etc.) and organic solvents (such as toluene, xylene). Silicone resin adhesive has the properties of high temperature resistance, corrosion resistance, radiation resistance and weather resistance, and can work for a long time at a high temperature of 400 °C without being damaged. In this way, it is possible to avoid the failure of the adhesion layer 125 caused by the high temperature in the process, thereby ensuring the tightness of the pressure detection device and the detection accuracy of the pressure detection device.
  • the pressure detecting device is embedded in the groove 113.
  • the pressure detection device includes a pressure sensor 121, and the pressure sensor 121 is used to detect the pressure of its own orthographic projection on the first surface 111.
  • the depth of the groove 113 is usually greater than or equal to the thickness of the pressure sensor 121, so that the pressure sensor 121 can be completely embedded in the groove 113, to avoid the protective layer 14 on the second surface 112 from being unable to completely seal the pressure sensor 121, thereby ensuring the pressure sensor 121 121 security. It should be noted that the thickness of the pressure sensor 121 may also be greater than the depth of the groove 113, as long as the sealing effect of the protective layer 14 is not affected.
  • the detection accuracy of the pressure sensor 121 is related to the sensing distance d.
  • the sensing distance d refers to the distance between the pressure sensor 121 facing the first surface 111 and the first surface 111 in the direction of the pressure sensor 121 facing the first surface 111. , The smaller the sensing distance d, the higher the detection accuracy of the pressure sensor 121.
  • the pressure detection device further includes a signal amplifier (not shown), which is used to amplify the pressure obtained by the pressure sensor 121 to improve the detection accuracy of the pressure sensor 121.
  • a signal amplifier (not shown), which is used to amplify the pressure obtained by the pressure sensor 121 to improve the detection accuracy of the pressure sensor 121.
  • the sensing distance d is greater than or equal to 0.2 mm, and the thickness of the substrate 11 is 0.8 mm to 1.2 mm, such as 0.9 mm, 1 mm, or 1.1 mm.
  • the monitoring wafer 1 includes a wire 126 and a bonding pad 127.
  • the wire 126 is used to connect the pressure sensor 121 with other electronic components.
  • the bonding pad 127 is used to fix the wire 126 to prevent the wire 126 from moving and causing short circuits.
  • the bonding disk 127 and the wire 126 may be located in the groove 113 or on the second surface 112, as long as the sealing effect of the protective layer 14 is not affected.
  • the monitoring wafer 1 further includes an induction coil 122, and the induction coil 122 is connected to the pressure sensor 121.
  • the induction coil 122 can receive energy and signals transmitted by another coil that is adapted to it, and is used to supply power to the pressure sensor 121.
  • the monitoring wafer 1 does not need to obtain power from an external power source through a wired manner, which is beneficial to avoid short-circuit or open-circuit problems that may easily occur when the wire is exposed to the process environment, thereby ensuring that the pressure sensor 121 can detect the first surface stably and effectively. (Unlabeled) pressure.
  • the monitoring wafer 1 further includes a power supply device 123 which is respectively connected to the pressure sensor 121 and the induction coil 122.
  • the power supply device 123 is used for receiving charging of the induction coil 122 and for supplying power to the pressure sensor 121. In this way, there is no need to continuously supply power to the monitoring wafer 1 during the manufacturing process, and only need to charge the power supply device 123 before proceeding to the manufacturing process, which is beneficial to avoid energy transfer from being affected by the process environment or affecting the process environment, thereby ensuring that the pressure detection can continue. It is carried out stably and the preparation process can be carried out according to preset parameters.
  • the power supply device 123 includes a rechargeable battery, and the number of the power supply device 123 is determined according to the power of the power supply device 123 and the power and layout of the power supply object. It should be noted that since the current obtained by the induction coil 122 is alternating current, a frequency converter is also required in the power supply device 123, and the frequency converter converts the alternating current received by the induction coil 122 into direct current, and then charges the power supply device 123.
  • the monitoring wafer 1 further includes a processor 124 connected to the pressure sensor 121 for storing pressure data obtained by the pressure sensor 121.
  • the processor 124 is also used to send pressure data to the outside through the induction coil 122 or Bluetooth.
  • the method for the processor 124 to send the pressure data can be either actively sending in real time, actively sending at a preset time interval, or at a preset time interval. Time point sending can also be passively sending the stored data after receiving the preset instruction.
  • the processor 124 transmits signals through the induction coil 122, the frequency converter can convert the direct current of the battery into alternating current and send a signal to the outside through the induction coil.
  • the induction coil 122, the power supply device 123, and the processor 124 are all embedded in the groove 113 to ensure the tightness of the protective layer 14.
  • FIG. 5 is a schematic diagram of the distribution of a pressure detection device provided by an embodiment of the application.
  • the pressure detection device includes a plurality of pressure sensors 121.
  • the first surface 111 includes a middle area 131 and an outer area 132 surrounding the middle area 131.
  • the middle area 131 includes at least one pressure sensor 121
  • the outer area 132 includes at least one pressure sensor 121.
  • Pressure sensor 121 is included in the middle area 131.
  • the pressure in the middle area 131 and the pressure in the outer area 132 can be analyzed to determine whether the load-bearing performance of the wafer carrier plate is qualified, as long as the pressure in one of the areas is not If the preset requirements are met, the carrying capacity of the wafer carrier tray is unqualified; if not, the cause of the failure can be quickly found and resolved based on the area that does not meet the preset requirements.
  • each area includes at least one pressure sensor 121, which can more accurately confirm the occurrence of a problem when there is a problem with the carrying capacity of the wafer carrier. The area where the problem occurred, and then accurately find the cause of the failure based on the area where the problem occurred, thereby shortening the machine return time.
  • the method of dividing the first surface 11 into a plurality of smaller areas further includes: in the direction of the middle area 131 toward the outer area 132, The outer region 132 is divided into a plurality of ring-shaped sub-regions that are sequentially surrounded; each ring-shaped sub-region and the middle region 131 include at least two pressure sensors 121; under the condition that the ring width is constant, each ring-shaped sub-region The number of pressure sensors 121 in the sub-area is greater than or equal to the number of pressure sensors 121 in another ring-shaped sub-area surrounded by the ring-shaped sub-area.
  • the diameter of the detection wafer may also be 200 mm, and the number of pressure sensors may be set according to actual needs.
  • the pressure detection device can obtain the pressure of the substrate 11 toward the first surface 111 of the wafer carrier 2, so that the product formed in the process exists
  • the pressure detection device can judge whether the suction capacity of the wafer carrier is qualified according to the pressure obtained by the pressure detection device, so as to avoid removing the wafer carrier without confirming whether the failure occurs, and then Speed up the loop of the machine; in addition, the wafer carrier can be tested after reinstallation and machine maintenance to ensure that the wafer carrier has a better carrying capacity.
  • an embodiment of the present application also provides a fault location method, including: providing a wafer carrier and a monitoring wafer, the first surface of the monitoring wafer faces the wafer carrier and is fixed to the wafer carrier; The wafer undergoes a preset process, and in the process of performing the preset process, the pressure data of the first surface is obtained; based on the pressure data, it is determined whether the carrying capacity of the wafer carrier plate to the monitored wafer is qualified.
  • FIG. 6 is a schematic diagram of the pressure change of the monitored wafer provided by an embodiment of the application
  • FIG. 7 is a schematic diagram of the pressure distribution of the monitored wafer provided by an embodiment of the application.
  • the pressure detection device includes a plurality of pressure sensors, and the pressure sensor obtains the pressure of the first surface in real time during the preset process. In this way, the pressure of the first surface at different time points can be obtained, which is beneficial for monitoring whether there is a problem with the pressure at any time point of the first surface.
  • the pressure change schematic diagram includes multiple pressure curves.
  • the pressure curve can represent the pressure detected by a pressure sensor or the average pressure in a region; in addition, when comparing multiple wafer carriers When testing the load capacity of the pressure curve, the pressure curve can also be the average value of the pressure obtained by each monitoring wafer. The user can adjust the meaning of the pressure curve to meet different needs.
  • the user can intuitively judge whether the load carrying capacity of the wafer carrier is abnormal according to the pressure at a certain point in time or the pressure difference at different points in time.
  • the pressure state of the wafer carrier plate at that point in time can be displayed.
  • the pressure detected by the pressure detection device is simulated by color using the pressure color table 134 as a standard. In this way, the user can intuitively determine the location of the abnormal load, and then quickly find the cause of the failure based on the position of the abnormal load. Solve the fault and improve the machine return time.
  • the user can set the pressure curve to different meanings according to requirements, and can set different qualification conditions according to the meaning of the pressure curve.
  • the meaning of the pressure curve can be set to the pressure detected by one pressure sensor, and the eligibility condition can be set as the pressure acquired by any pressure sensor is greater than the first The preset value and the difference between the pressure obtained by any two pressure sensors is less than the second threshold value;
  • the meaning of the pressure curve can be set It is the average value of the pressure in a region, and the eligibility condition can be set to be that the average value of the pressure obtained by the pressure sensor in any area is greater than the third preset value and the difference between the average value of the pressure obtained by the pressure sensors in different areas is less than The fourth preset value; when inspecting multiple wafer carriers to be inspected, the meaning of the pressure curve can be set to the average pressure of a monitored wafer, and the qualified condition can be set to monitor wafer acquisition The average value
  • FIG. 8 is a schematic diagram of the pressure distribution of a monitored wafer according to another embodiment of this application.
  • the first pressure distribution map 135 and the second pressure distribution map 136 are derived from different chambers of a machine, and the third pressure distribution map 137 and the fourth pressure distribution map 138 are from different chambers of another machine.
  • the first pressure distribution map 135 is a pressure distribution map of a wafer carrier plate with a qualified load capacity, and the fourth pressure distribution map is a pending test.
  • the pressure distribution graph of the wafer carrier plate is a pressure distribution map of a wafer carrier plate with a qualified load capacity
  • the The carrying capacity of the wafer carrier plate is qualified.
  • the pressure obtained by monitoring the wafer may be the average value of the pressure obtained by the monitoring wafer, or the pressure at a specific position, such as the first reference point 141 at the same position on the pressure distribution graph.
  • the third reference point 143 may also be the difference between the pressures of two specific positions, such as the pressure difference between the first reference point 141 and the second reference point 142, and the pressure difference between the third reference point 143 and the fourth reference point 144 Pressure difference.
  • the load of the wafer carrier In addition, in order to avoid large fluctuations in the load-bearing pressure of the wafer carrier, during the preset process, when the difference between the pressures obtained by the monitoring wafer at different times is less than the seventh preset value, the load of the wafer carrier The ability is qualified.
  • the reason for the failure can be analyzed based on the pressure data that caused the failure; in addition, the life of the wafer carrier can be analyzed based on the pressure data that caused the failure and the standard pressure data.
  • the pressure on the first surface is monitored during the preset process. In this way, when a product defect occurs, it can be judged whether there is a problem with the carrying capacity of the wafer carrier by analyzing the pressure obtained by the pressure detection device. Avoid removing the wafer carrier tray without knowing whether it is malfunctioning, and ensure maintenance efficiency.
  • the embodiment of the present application also provides a monitoring system.
  • the monitoring system includes: at least one monitoring wafer; a wafer transfer box 3, the wafer transfer box 3 is used to carry the monitoring wafer, and used to obtain pressure data in the monitoring wafer; electronic equipment 4, electronic equipment 4 Connected to the wafer transfer box 3, the electronic device 4 is used to obtain and analyze the pressure data.
  • the wafer transfer box 3 has a card slot 31, and the card slot 31 is used to carry the monitoring wafer; the wafer transfer box 3 also has an adapter coil, and the monitoring wafer has an induction coil and is connected to the induction coil.
  • the power supply device of the power supply device, the induction coil and the adapter coil can be mutually inducted, and the wafer transfer box 3 can charge the power supply device in the monitoring wafer through the internal power supply or the external power supply, the adapter coil and the induction coil.
  • the size of the monitoring wafer is the same as the general wafer size, and the wafer transfer box 3 is also the same as the wafer transfer box in daily production.
  • the monitoring system can obtain the pressure data in the monitored wafer, and then can analyze the pressure data and draw icons that are convenient for problem analysis, which is helpful for quickly confirming whether there is a fault and finding and solving the fault in time.

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Abstract

一种监测晶圆（1）及监测系统，监测晶圆（1）包括：基底（11），基底（11）具有第一表面（111），第一表面（111）用于朝向晶圆承载盘（2）且与晶圆承载盘（2）相固定；压力检测装置，压力检测装置位于基底（11）上，用于获取第一表面（111）受到的压力。

Description

监测晶圆及监测系统
交叉引用
本申请要求于2020年4月2日递交的名称为“监测晶圆及监测系统”、申请号为202010254958.9的中国专利申请的优先权，其通过引用被全部并入本申请。
技术领域
本申请实施例涉及半导体领域，特别涉及一种监测晶圆及监测系统。
背景技术
目前，静电吸盘是半导体蚀刻机台的重要组成部分，在利用半导体蚀刻机台辅助进行晶圆的工艺制程时，常采用静电吸盘承载晶圆以实现固定效果。此外，为加快制作效率，通常在一个机台的多个腔室内进行同一工艺制程。
在进行上述工艺制程后，若不同腔室形成的产品表现不同，则需要检查半导体蚀刻机台是否发生故障；此外，若在工艺制程过程中，反应腔室内发生氦泄露，也需要检查半导体刻蚀机台是否发生故障。
在对半导体蚀刻机台进行故障检查时，需要对可能存在故障的结构进行更替，而由于静电吸盘存在装配困难和价值高昂等特点，若在静电吸盘不存在性能问题的情况下进行更新替换，则会出现费时费力费财的情况。
申请内容
本申请部分实施例提供一种监测晶圆及监测系统，该监测晶圆能够对监测晶圆朝向晶圆承载盘的表面所承受的压力进行检测，进而基于检测到的压力数据判断晶圆承载盘的承载性能是否存在问题。
为解决上述问题，本申请部分实施例提供一种监测晶圆，包括：基底，所述基底具有第一表面，所述第一表面用于朝向晶圆承载盘且与所述晶圆承载盘 相固定；压力检测装置，所述压力检测装置位于所述基底上，用于获取所述第一表面受到的压力。
另外，所述基底具有与所述第一表面相对的第二表面，所述基底内具有自所述第二表面向所述第一表面延伸的凹槽，所述压力检测装置嵌入所述凹槽内；所述监测晶圆还包括：保护层，所述保护层位于所述第二表面，用于密封所述压力检测装置。
另外，监测晶圆还包括：粘结层，所述粘结层的材料包括硅树脂胶黏剂，用于粘接所述基底与所述保护层。
另外，监测晶圆还包括：感应线圈，所述感应线圈与所述压力检测装置连接，用于向所述压力检测装置供电。
另外，监测晶圆还包括：供电装置，所述供电装置分别与所述压力检测装置和所述感应线圈连接，用于接收所述感应线圈的充电，且用于向所述压力检测装置供电。
另外，监测晶圆还包括：处理器，所述处理器与所述压力检测装置连接，用于存储所述压力检测装置获取到的压力数据。
另外，所述处理器还用于通过所述感应线圈发送已存储的所述压力数据。
另外，所述压力检测装置包括信号放大器和至少一压力传感器，所述信号放大器用于放大所述压力传感器获取到的所述压力。
另外，在所述压力传感器朝向所述第一表面的方向上，所述压力传感器朝向所述第一表面的表面与所述第一表面的间距大于或等于0.2mm。
另外，所述压力检测装置包括多个压力传感器，所述压力传感器用于检测所在位置的压力，所述第一表面包括中间区域和包围所述中间区域的外侧区域，所述中间区域内包括至少一所述压力传感器，所述外侧区域内包括至少一所述压力传感器。
另外，在所述中间区域朝向所述外侧区域的方向上，所述外侧区域包括多个依次包绕的环状子区域，每一所述环状子区域内包括至少一所述压力传感器。
另外，所述第一表面为圆面，所述压力传感器的数量为33个。
本申请部分实施例还提供一种监测系统，包括：至少一块上述监测晶圆；晶圆传送盒，所述晶圆传送盒用于承载所述监测晶圆，并用于获取所述监测晶圆中的压力数据；电子设备，所述电子设备与所述晶圆传送盒连接，所述电子设备用于获取并分析所述压力数据。
另外，所述监测晶圆包括感应线圈和与所述感应线圈连接的供电装置，所述晶圆传送盒包括适配线圈，所述感应线圈与所述适配线圈之间可互感，所述晶圆传送盒通过所述适配线圈和所述感应线圈向所述监测晶圆内的供电装置充电。
与现有技术相比，本申请部分实施例提供的技术方案具有以下优点：
上述技术方案中，压力检测装置检测基底朝向晶圆承载盘的第一表面的压力，在晶圆承载盘承载监测晶圆后，可基于压力检测装置获取到的压力数据分析晶圆承载盘的承载性能。
另外，将压力检测装置嵌入基底内的凹槽中，并用位于第二表面的保护层进行密封封闭，如此，有利于避免压力检测装置在检测过程中受到损伤，进而保证检测到的压力数据的有效性。
另外，第一表面包括内侧区域和外侧区域，且内侧区域或外侧区域中包含有至少一个压力传感器，如此，在当晶圆承载盘发生故障时，能够根据处于不同位置的压力传感器所检测到的压力数据分析发生故障的区域。
附图说明
一个或多个实施例通过与之对应的附图中的图片进行示例性说明，这些示例性说明并不构成对实施例的限定，附图中具有相同参考数字标号的元件表示为类似的元件，除非有特别申明，附图中的图不构成比例限制。
图1是本申请一实施例提供的一种监测晶圆的剖面结构示意图；
图2至图4为本申请一实施例提供的监测晶圆的结构示意图；
图5为本申请一实施例提供的压力检测装置分布示意图；
图6为本申请一实施例提供的监测晶圆压力变化示意图；
图7为本申请一实施例提供的监测晶圆压力分布示意图；
图8为本申请又一实施例提供的监测晶圆压力分布示意图；
图9为本申请另一实施例提供的监测系统。
具体实施方式
由背景技术可知，目前在产品或制程工艺出现问题后，在不拆除晶圆承载盘的条件下无法确定晶圆承载盘的承载性能是否存在问题。
为解决上问题，本申请实施例提供一种监测晶圆、故障定位方法及监测系统，通过在监测晶圆的基底上设置压力检测装置，检测基底朝向晶圆承载盘的第一表面所受到的压力，如此，在相应工艺制程结束后若发现制程产品不满足要求或者在工艺制程过程中制程工艺发生预料之外的偏差，可基于压力检测装置检测到的压力数据分析晶圆承载盘的承载性能是否合格。
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合附图对本申请的各实施例进行详细的阐述。然而，本领域的普通技术人员可以理解，在本申请各实施例中，为了使读者更好地理解本申请而提出了许多技术细节。但是，即使没有这些技术细节和基于以下各实施例的种种变化和修改，也可以实现本申请所要求保护的技术方案。
图1是本申请一实施例提供的一种监测晶圆的剖面结构示意图。
参考图1，晶圆承载盘2承载监测晶圆1，监测晶圆1具有第一表面111，第一表面111朝向晶圆承载盘2且与晶圆承载盘2相固定。
本实施例中，晶圆承载盘2与高压电源20的负极21连接，晶圆承载盘2包括电介质层23，电介质层23内具有直流电极231。当直流电极231与高压电源20的负极21连通时，电介质层23表面会产生极化电荷，而极化电荷会产生电场，这一电场会进一步促使置于晶圆承载盘2上的监测晶圆1表面产生极化电荷，分布在第一表面111的电荷与分布在电介质层23靠近监测晶圆1的表面的电荷极性相反，如此，晶圆承载盘2吸附固定住监测晶圆1。
本实施例中，晶圆承载盘2还与高压电源20内的电流互感器22连接。电流互感器22用于检测监测晶圆1内因电荷移动而产生的电流24的参数，高压电源20可根据电流互感器22检测到的电流参数调节输出电流的大小，进而调整晶圆承载盘2的吸附能力。
晶圆承载盘2对监测晶圆1的吸附能力与监测晶圆1的第一表面111的清洁度有关，当聚合物附着在第一表面111时，容易导致晶圆承载盘2的吸附力不足，进而导致无法保证监测晶圆1的位置精度和无法形成满足预设要求的产品。
需要说明的是，监测晶圆1的尺寸应当与实际工艺过程中使用的晶圆的尺寸相同，如此，有利于保证监测晶圆1获取到的压力数据的有效性。
本实施例中，高压电源20为直流电源；在其他实施例中，电源为低流直流电源，电源的正极与电介质层中的直流电极连接。
图2至图4为本申请一实施例提供的监测晶圆的结构示意图。
参考图2，基底11具有与第一表面相对的第二表面112，基底11内具有自第二表面112向第一表面延伸的凹槽113，凹槽113用于嵌入压力检测装置；监测晶圆1还包括保护层14，保护层14用于密封压力检测装置，避免压力检测装置因制程工艺而受到损伤，从而确保压力检测装置具有较好的检测精度。
本实施例中，保护层14的材料包括氧化钇或氟氧化钇，用于避免压力检测装置受到制程工艺所产生的等离子体或外部注入的等离子体的伤害；此外，监测晶圆还包括涂覆在基底11表面的粘结层125，用于粘接基底11和保护层14，粘结层125的材料包括硅树脂胶黏剂，在固化后能够起到良好的粘附作用。
硅树脂胶黏剂由硅树脂(如聚甲基苯基硅氧烷)加入某些无机填料(云母、石棉等)和有机溶剂(如甲苯、二甲苯)混合而成。硅树脂胶黏剂具有耐高温、耐腐蚀、耐辐照以及耐候等性能，能够在400℃的高温下长期工作而不被破坏。如此，能够避免工艺制程中的高温导致粘附层125失效，进而保证压力检测装置的密封性和压力检测装置的检测精度。
参考图3，压力检测装置嵌入凹槽113内。
本实施例中，压力检测装置包括压力传感器121，压力传感器121用于检测其自身在第一表面111上的正投影处的压力。
凹槽113的深度通常大于或等于压力传感器121的厚度，从而使得压力传感器121能够完全嵌入凹槽113内，避免位于第二表面112上的保护层14无法完全密封压力传感器121，进而保证压力传感器121的安全性。需要说明的是， 压力传感器121的厚度也可以大于凹槽113的深度，只要不影响保护层14的密封效果即可。
压力传感器121的检测精度与传感距离d有关，传感距离d指的是在压力传感器121朝向第一表面111的方向上，压力传感器121朝向第一表面111的表面与第一表面111的间距，传感间距d越小，压力传感器121的检测精度越高。
本实施例中，压力检测装置还包括信号放大器(未图示)，信号放大器用于放大压力传感器121获取到的压力，提高压力传感器121的检测精度。如此，有利于增加传感间距d的可选范围，避免需要的传感间距d过小而导致凹槽113底部的基底11因过薄发生断裂等问题。
本实施例中，传感间距d大于或等于0.2mm，基底11的厚度为0.8mm～1.2mm，例如0.9mm、1mm或1.1mm。
此外，监测晶圆1包括导线126和粘合盘127，导线126用于连通压力传感器121与其他电子元件，粘合盘127用于固定导线126，避免导线126移动从而造成短路等问题。其中，粘合盘127和导线126既可以位于凹槽113内也可以置于第二表面112上，只要不影响保护层14的密封效果即可。
参照图4，本实施例中，监测晶圆1还包括感应线圈122，感应线圈122与压力传感器121连接。感应线圈122可接收与其适配的另一线圈所传递的能量和信号，并用于向压力传感器121供电。如此，监测晶圆1无需通过有线的方式从外界电源中获取电力，有利于避免导线暴露在工艺环境下所容易出现的短路或断路等问题，进而保证压力传感器121能够稳定有效地检测第一表面(未标示)的压力。
监测晶圆1还包括供电装置123，供电装置123分别与压力传感器121和感应线圈122连接，供电装置123用于接收感应线圈122的充电，且用于向压力传感器121供电。如此，无需在制程工艺过程中持续为监测晶圆1供电，只需要在进行制程工艺之前向供电装置123充电，有利于避免能量传递受到工艺环境的影响或影响工艺环境，从而保证压力检测能够持续稳定地进行以及制备工艺能够按照预设参数进行。
其中，供电装置123包括可充电电池，供电装置123的数量根据供电装置123的功率以及供电对象的功率和布局决定。需要说明的是，由于感应线圈122 获取到的电流为交流电，因此供电装置123内还需要有变频器，变频器将感应线圈122接收到的交流电转换为直流电，进而给供电装置123充电。
监测晶圆1还包括处理器124，处理器124与压力传感器121连接，用于存储压力传感器121获取到的压力数据。此外，处理器124还用于通过感应线圈122或蓝牙等形式向外发送压力数据，处理器124发送压力数据的方式既可以是主动地实时发送、主动地按照预设时间间隔发送或按照预设时间点发送，也可以是被动地在接收到预设指令之后再发送已存储的数据。处理器124通过感应线圈122进行信号传输时，变频器可以将电池的直流电转换为交流电并通过感应线圈向外发送信号。
本实施例中，感应线圈122、供电装置123以及处理器124都嵌入至凹槽113中，以保证保护层14的密封性。
参照图5，图5为本申请一实施例提供的压力检测装置分布示意图。
本实施例中，压力检测装置包括多个压力传感器121，第一表面111包括中间区域131和包围中间区域131的外侧区域132，中间区域131内包括至少一压力传感器121，外侧区域132包括至少一压力传感器121。其中，中间区域131内包括至少一压力传感器121指的是，至少一压力传感器121在第一表面111上的正投影位于中间区域131内，外侧区域132同理。
当制程工艺形成的产品存在缺陷或者制程工艺被干扰甚至是破坏时，可以通过分析中间区域131的压力和外侧区域132的压力判断晶圆承载盘的承载性能是否合格，只要其中一个区域的压力不满足预设要求，则晶圆承载盘的承载能力不合格；若不合格，可基于不满足预设要求的区域快速找到故障原因并解决故障。
也就是说，将第一表面111分为更小的多个区域，且每一区域内包括至少一压力传感器121，能够在晶圆承载盘的承载能力存在问题时，更为准确地确认发生问题的区域，进而基于发生问题的区域准确地找到故障原因，从而缩短机台回线时间。
在将第一表面111分为中间区域131和外侧区域132的基础上，将第一表面11分为更小的多个区域的方法，还包括：在中间区域131朝向外侧区域132的方向上，将外侧区域132分为多个依次包绕的环状子区域；每一环状子区域 内和中间区域131内包括至少两个压力传感器121；在环宽不变的情况下，每一环状子区域内的压力传感器121的数量大于或等于该环状子区域所包绕的另一环状子区域内的压力传感器121的数量。
本实施例中，为提高问题区域确认的准确性以及降低制备监测晶圆的难度，在第一表面111为圆面且圆面直径为300mm的情况下，设置33个压力传感器。在其他实施例中，检测晶圆的直径还可以为200mm，所述压力传感器的个数可以按实际需要进行设置。
本实施例中，通过在监测晶圆1的基底11上设置压力检测装置，压力检测装置能够获取基底11朝向晶圆承载盘2的第一表面111的压力，如此，在工艺制程形成的产品存在缺陷或者工艺制程发生干扰或遭到破坏时，能够根据压力检测装置获得到的压力判断晶圆承载盘的吸附能力是否合格，从而避免在无法确认是否发生故障的情况下拆除晶圆承载盘，进而加快机台的回线；此外，还能够在进行重新装机后和机台维护后对晶圆承载盘进行测试，以保证晶圆承载盘具有较好的承载能力。
相应地，本申请实施例还提供一种故障定位方法，包括：提供晶圆承载盘和监测晶圆，监测晶圆的第一表面朝向晶圆承载盘且与晶圆承载盘相固定；对监测晶圆进行预设工艺，且在进行预设工艺过程中，获取第一表面的压力数据；基于压力数据，判断晶圆承载盘对监测晶圆的承载能力是否合格。
以下将结合附图对本申请实施例提供的故障定位方法进行详细说明。
图6为本申请一实施例提供的监测晶圆压力变化示意图；图7为本申请一实施例提供的监测晶圆压力分布示意图。
本实施例中，压力检测装置包括多个压力传感器，在进行预设工艺的过程中，压力传感器实时获取第一表面的压力。如此，能够获取第一表面在不同时间点的压力，有利于监测第一表面任一时间点的压力是否存在问题。
参考图6，压力变化示意图中包括多条压力曲线，压力曲线既可以代表的是一个压力传感器检测到的压力，也可以代表一个区域内的压力平均值；此外，在对多个晶圆承载盘的承载能力进行测试时，压力曲线还可以是每一监测晶圆获取的压力平均值，用户可以通过调整压力曲线所代表的含义来满足不同的需求。
由于压力曲线的压力值随着时间波动，因此根据某一时间点的压力或者不同时间点的压力差，用户能够直观判断出晶圆承载盘的承载能力是否发生异常。
在发现某一时间点晶圆承载盘的承载能力异常时，可以展示该时间点晶圆承载盘的压力状态。参考图7，以压力色彩表134为标准，将压力检测装置检测到的压力通过色彩模拟出来，如此，用户能够直观地判断出发生承载异常的位置，进而基于承载异常的位置快速找到故障原因并解决故障，提高机台回线时间。
本实施例中，用户可以根据需求将压力曲线设定为不同的含义，且可以根据压力曲线的含义不同设定不同的合格条件。举例来说：当压力检测装置包括多个压力传感器时，可以将压力曲线的含义设定为一个压力传感器检测到的压力，并可将合格条件设置为任一压力传感器获取到的压力大于第一预设值，以及任意两个压力传感器获取到的压力之差小于第二阈值值；当第一表面包括多个区域，每一区域内包括至少一个压力传感器时，可以将压力曲线的含义设定为一个区域的压力平均值，并可将合格条件设置为任一区域内的压力传感器获取的压力的平均值大于第三预设值且不同区域内的压力传感器获取的压力的平均值之差小于第四预设值；当对多个待检测的晶圆承载盘进行检测时，可以将压力曲线的含义设定为一个监测晶圆的压力平均值，并可将合格条件设置为监测晶圆获取的压力平均值大于第五预设值。
当采用多个腔室进行同一工艺制程以形成产品时，在保证产品符合要求的条件下通常还会保证不同腔室形成的产品具有较好的一致性，即不同腔室形成的产品偏差较小。为保证不同腔室形成的产品具有较好的一致性，通常需要提供一参考腔室，并将参考腔室内的晶圆承载盘对应的压力分布图作为参考标准，当某一机台某一腔室内形成的产品相对于参考腔室形成的产品有较大差异时，可以通过对比不同腔室内监测晶圆检测的压力，确认出现较大偏差的原因是否为不同腔室内的晶圆承载板的承载能力存在差异。
参考图8，图8为本申请又一实施例提供的监测晶圆压力分布示意图，第一压力分布图135、第二压力分布图136来源于一机台的不同腔室，第三压力分布图137和第四压力分布图138为来源另一机台的不同腔室，其中第一压力分布图135为一承载能力合格的晶圆承载盘的压力分布图，第四压力分布图为一待检测的晶圆承载盘的压力分布图。
本实施例中，当待检测的晶圆承载盘对应的监测晶圆获取的压力与承载能力合格的晶圆承载盘对应的监测晶圆获取的压力之差小于第六预设值时，待检测的晶圆承载盘的承载能力合格。
其中，监测晶圆获取的压力既可以是监测晶圆获取的多个的压力的平均值，也可以是特定的某一位置的压力，例如在压力分布图上处于相同位置的第一参考点141和第三参考点143，还可以是特定的两个位置的压力的差值，例如第一参考点141和第二参考点142的压力差值以及第三参考点143和第四参考点144的压力差值。
此外，为避免晶圆承载盘的承载压力有较大的波动，在进行预设工艺过程中，监测晶圆在不同时间获取的压力之差小于第七预设值时，晶圆承载盘的承载能力合格。
当晶圆承载盘的承载能力不合格时，可基于导致不合格的压力数据分析不合格原因；此外，还可以基于导致不合格的压力数据和标准的压力数据分析晶圆承载盘的寿命。
本实施例中，在进行预设工艺的过程中监测第一表面的压力，如此，在发生产品缺陷时，能够通过分析压力检测装置获取到的压力判断晶圆承载盘的承载能力是否存在问题，避免在不知道是否发生故障的条件下拆除晶圆承载盘，保证维修效率。
相应地，本申请实施例还提供一种监测系统。
参考图9，监测系统包括：至少一监测晶圆；晶圆传送盒3，晶圆传送盒3用于承载监测晶圆，并用于获取监测晶圆中的压力数据；电子设备4，电子设备4与晶圆传送盒3连接，电子设备4用于获取并分析压力数据。
以下将结合附图对本申请实施例提供的监测系统进行详细说明。
本实施例中，晶圆传送盒3内具有卡槽31，卡槽31用于承载监测晶圆；晶圆传送盒3内还具有适配线圈，监测晶圆内具有感应线圈和与感应线圈连接的供电装置，感应线圈与适配线圈之间可互感，晶圆传送盒3可通过内部电源或外部电源、适配线圈以及感应线圈向监测晶圆内的供电装置充电。
本实施例中，监测晶圆的尺寸与通用的晶圆尺寸相同，晶圆传送盒3也与 日常生产中的晶圆传送盒相同。
本实施例中，监测系统能够获取监测晶圆内压力数据，进而能够对压力数据进行分析，绘制出便于问题分析的图标，有利于快速确认是否存在故障以及及时找到故障并解决。
本领域的普通技术人员可以理解，上述各实施方式是实现本申请的具体实施例，而在实际应用中，可以在形式上和细节上对其作各种改变，而不偏离本申请的精神和范围。任何本领域技术人员，在不脱离本申请的精神和范围内，均可作各自更动与修改，因此本申请的保护范围应当以权利要求限定的范围为准。

Claims (15)

  1. 一种监测晶圆，包括：
    基底，所述基底具有第一表面，所述第一表面用于朝向晶圆承载盘且与所述晶圆承载盘相固定；
    压力检测装置，所述压力检测装置位于所述基底上，用于获取所述第一表面受到的压力。
  2. 根据权利要求1所述的监测晶圆，其中，所述基底具有与所述第一表面相对的第二表面，所述基底内具有自所述第二表面向所述第一表面延伸的凹槽，所述压力检测装置嵌入所述凹槽内；
    所述监测晶圆还包括：保护层，所述保护层位于所述第二表面，用于密封所述压力检测装置。
  3. 根据权利要求2所述的监测晶圆，其中，还包括：粘结层，所述粘结层的材料包括硅树脂胶黏剂，用于粘接所述基底与所述保护层。
  4. 根据权利要求2或3所述的监测晶圆，其中，还包括：感应线圈，所述感应线圈与所述压力检测装置连接，用于向所述压力检测装置供电。
  5. 根据权利要求4所述的监测晶圆，其中，还包括：供电装置，所述供电装置分别与所述压力检测装置和所述感应线圈连接，用于接收所述感应线圈的充电，且用于向所述压力检测装置供电。
  6. 根据权利要求4所述的监测晶圆，其中，还包括：处理器，所述处理器与所述压力检测装置连接，用于存储所述压力检测装置获取到的压力数据。
  7. 根据权利要求6所述的监测晶圆，其中，所述处理器还用于通过所述感应线圈发送已存储的所述压力数据。
  8. 根据权利要求1所述的监测晶圆，其中，所述压力检测装置包括信号放大器和至少一压力传感器，所述信号放大器用于放大所述压力传感器获取到的所述压力。
  9. 根据权利要求8所述的监测晶圆，其中，在所述压力传感器朝向所述第一表面的方向上，所述压力传感器朝向所述第一表面的表面与所述第一表面的间 距大于或等于0.2mm。
  10. 根据权利要求1所述的监测晶圆，其中，所述压力检测装置包括多个压力传感器，所述第一表面包括中间区域和包围所述中间区域的外侧区域，所述中间区域内包括至少一所述压力传感器，所述外侧区域内包括至少一所述压力传感器。
  11. 根据权利要求10所述的监测晶圆，其中，在所述中间区域朝向所述外侧区域的方向上，所述外侧区域包括多个依次包绕的环状子区域，每一所述环状子区域内包括至少一所述压力传感器。
  12. 根据权利要求8所述的监测晶圆，其中，所述第一表面为圆面，所述压力传感器的数量为33个。
  13. 一种监测系统，包括：
    至少一片如权利要求1所述的监测晶圆；
    晶圆传送盒，所述晶圆传送盒用于承载所述监测晶圆，并用于获取所述监测晶圆中的压力数据；
    电子设备，所述电子设备与所述晶圆传送盒连接，所述电子设备用于获取并分析所述压力数据。
  14. 根据权利要求13所述的监测系统，其中，所述监测晶圆包括感应线圈和与所述感应线圈连接的供电装置，所述晶圆传送盒包括适配线圈，所述感应线圈与所述适配线圈之间可互感，所述晶圆传送盒通过所述适配线圈和所述感应线圈向所述监测晶圆内的供电装置充电。
  15. 根据权利要求13所述的监测系统，其中，所述晶圆传送盒包含内部电源或外部电源，所述晶圆传送盒通过所述内部电源或外部电源向所述监测晶圆内的供电装置充电。
PCT/CN2021/078511 2020-04-02 2021-03-01 监测晶圆及监测系统 WO2021196945A1 (zh)

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