WO2021192239A1 - 金属接合体、半導体装置、導波管及び被接合部材の接合方法 - Google Patents

金属接合体、半導体装置、導波管及び被接合部材の接合方法 Download PDF

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Publication number
WO2021192239A1
WO2021192239A1 PCT/JP2020/014085 JP2020014085W WO2021192239A1 WO 2021192239 A1 WO2021192239 A1 WO 2021192239A1 JP 2020014085 W JP2020014085 W JP 2020014085W WO 2021192239 A1 WO2021192239 A1 WO 2021192239A1
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WIPO (PCT)
Prior art keywords
film
metal
layer
atom
alloy layer
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Ceased
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PCT/JP2020/014085
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English (en)
French (fr)
Japanese (ja)
Inventor
喬志 井島
浩次 山▲崎▼
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to US17/792,404 priority Critical patent/US12412861B2/en
Priority to CN202080098782.0A priority patent/CN115297986B/zh
Priority to DE112020006983.4T priority patent/DE112020006983T5/de
Priority to PCT/JP2020/014085 priority patent/WO2021192239A1/ja
Priority to JP2022510341A priority patent/JP7297148B2/ja
Publication of WO2021192239A1 publication Critical patent/WO2021192239A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K35/002—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of light metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/008—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating combining pressure with radiant energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/14—Preventing or minimising gas access, or using protective gases or vacuum during welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950°C
    • B23K35/282—Zn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
    • B23K35/3006—Ag as the principal constituent
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0096—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the lights guides being of the hollow type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/658—Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/30—Chains, hoops or rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07332—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/322—Multilayered die-attach connectors, e.g. a coating on a top surface of a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/322—Multilayered die-attach connectors, e.g. a coating on a top surface of a core
    • H10W72/323—Multilayered die-attach connectors, e.g. a coating on a top surface of a core characterised by the structures of the outermost layers, e.g. multilayered coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/345—Dispositions of die-attach connectors, e.g. layouts of outermost layers of multilayered die-attach connectors, e.g. coating being only on a part of a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H10W72/3524—Eutectic alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/355—Materials of die-attach connectors of outermost layers of multilayered die-attach connectors, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present disclosure relates to a method for joining a metal joint, a semiconductor device, a waveguide, and a member to be joined.
  • soldering is widely used for joining metal members in industrial products such as semiconductor devices and waveguides.
  • solder having a high melting point is used due to the high temperature operation of the product, joining in a reducing atmosphere is indispensable. Therefore, there has been a technique of forming a melt by a eutectic reaction by pressurizing and heating using an insert material containing Zn (zinc) and joining metal members to each other in the atmosphere (for example, Patent Document 1). reference).
  • the present disclosure has been made to solve the above-mentioned problems, and an object of the present disclosure is to obtain a metal joint that can be joined without melting the joining material.
  • the metal joint according to the present disclosure includes an Ag—Zn—Al alloy layer and an Al—Ag alloy layer provided on both sides of the Ag—Zn—Al alloy layer.
  • the metal joint according to the present disclosure is joined by solid phase bonding, and since there is no protrusion due to melting of the bonding material, there is an effect that dimensional stability can be improved.
  • FIG. 5 is a cross-sectional view for explaining a method of joining a metal base and a wiring substrate, which is a part of the manufacturing process of the semiconductor device of the second embodiment. It is sectional drawing for demonstrating the joining method of the semiconductor element and the wiring substrate which is a part of the manufacturing process of the semiconductor apparatus of Embodiment 2.
  • FIG. It is a perspective view for demonstrating the waveguide of Embodiment 3. It is sectional drawing which shows the waveguide of Embodiment 3.
  • FIG. 5 is a cross-sectional view for explaining a method of joining a metal base and a wiring substrate, which is a part of the manufacturing process of the semiconductor device of the second embodiment. It is sectional drawing for demonstrating the joining method of the semiconductor element and the wiring substrate which is a part of the manufacturing process of the semiconductor apparatus of Embodiment 2.
  • FIG. It is a perspective view for demonstrating the waveguide of Embodiment 3. It is sectional drawing which shows the waveguide of Embodiment 3.
  • FIG. 1 is a cross-sectional view showing the metal joint 100 of the present embodiment.
  • FIG. 2 is a cross-sectional view for explaining a method of manufacturing the metal joint 100.
  • the configuration of the metal joint 100 will be briefly described with reference to FIG. The details of the metal joint 100 will be described later in the description of the method of joining the members to be joined.
  • the metal joint 100 is a portion provided between two Al base materials 1 as a member to be joined and joins the Al base materials 1 to each other, and is a portion for joining the Al base materials 1 to each other, and is Ag-Zn-Al.
  • This is a portion in which Al—Ag alloy layers 4 are provided on both sides of the alloy layer 5 and laminated. That is, here, for the bonding between the Al base materials 1 as the two members to be bonded, the metal bonding composed of the Al—Ag alloy layer 4 / Ag—Zn—Al alloy layer 5 / Al—Ag alloy layer 4 is performed.
  • the body 100 is provided, and the structure of the entire laminate is as follows: Al base material 1 / Al—Ag alloy layer 4 / Ag—Zn—Al alloy layer 5 / Al—Ag alloy layer 4 / Al base material 1. It has become.
  • a Zn film 2 as a Zn layer is formed on an Al base material 1 (Al layer) as a member to be bonded, and Zn is formed.
  • Two metal laminates 10 are produced by forming an Ag film 3 as an Ag layer on a second surface 2b opposite to the first surface 2a bonded to the Al base material 1 of the film 2. That is, the metal laminate 10 has a structure in which the Al base material 1 / Zn film 2 / Ag film 3 are sequentially laminated.
  • the Al base material 1 is an Al alloy member containing Al (aluminum) as a main component.
  • the Al base material 1 is not limited to the Al alloy member as long as it contains Al as a main component.
  • a member containing Al as a main component and containing impurities in the balance may be used, or the Al base material 1 is composed of only Al. It may be a member.
  • the Al base material 1 preferably contains 99 atom% or more of Al, which is the main component, and even more preferably 100 atom% of Al.
  • the Zn film 2 is a thin film-like layer containing Zn (zinc) as a main component
  • the Ag film 3 is a thin film-like layer containing Ag (silver) as a main component. It is desirable that the Zn film 2 and the Ag film 3 contain 99 atom% or more of Zn or Ag, which are the main components, respectively, and it is further preferable that the Zn or Ag is 100 atom%. There is no problem even if the Zn film 2 and the Ag film 3 contain impurities in the balance.
  • the Al layer is composed of the Al base material 1 as the member to be joined is described as an example, but the present invention is not limited to this, and the Al layer is replaced with the Al base material 1.
  • It may be an Al film provided in a thin film on a member to be joined, which is a separate member. That is, the member to be joined may be an Al base material or a separate member.
  • the member to be joined is an Al base material
  • the Al base material is an Al layer
  • the Al film formed on the member to be joined is an Al layer.
  • the Al layer may be provided as a single member as in the Al base material 1 of the present embodiment, or may be provided as a thin film on a separate member.
  • the thickness is not particularly limited.
  • the Zn film 2 is preferably formed to be 0.1 ⁇ m or more and 2 ⁇ m or less from the viewpoint of forming an alloy by sufficient diffusion of atoms in order to secure stable adhesion.
  • the Ag film 3 is preferably formed to be 0.1 ⁇ m or more and 50 ⁇ m or less from the viewpoint of improving the bonding strength by sufficient diffusion of atoms and forming a more uniform film.
  • the method for forming the Zn film 2 and the Ag film 3 is not particularly limited, and for example, in addition to electrolytic plating or electroless plating, physical vapor deposition / PVD, chemical vapor deposition / CVD, and sputtering It can be formed by such as.
  • the film forming conditions are not particularly limited and can be appropriately set according to the method and apparatus used.
  • the film thickness is determined by calculating an appropriate film formation time from the film formation rate in the selected method.
  • the Al film is provided on a separate member as the Al layer, the film can be formed by the same method.
  • the Ag films 3 whose surfaces are exposed in the two metal laminates 10 are opposed to each other.
  • the Ag films 3 of the two metal laminates 10 are brought into contact with each other (first step).
  • heating is performed while pressurizing the Ag films 3 in contact with each other to bring the Ag films 3 into close contact with each other (second step).
  • atoms are diffused between the layers, so that the two metal laminates 10 are solid-phase bonded to each other.
  • solid phase bonding means bonding the metal material in each metal layer of the metal laminate without melting, that is, in a solid phase (solid) state.
  • sufficient adhesion is important for solid phase bonding between metal layers. This is because in the solid-phase bonding, the atoms are easily diffused as they adhere to each other, and the bonding can be performed in a shorter time and with low pressure. Further, in order to improve the adhesion, it is important to bring clean and active surfaces into contact with each other at the time of contact of each layer.
  • the oxide film on the surface of the Ag film 3 is removed by heating while pressurizing, thereby improving the adhesion between the Ag films 3 and promoting solid phase bonding.
  • the metal laminate 10 As a method of pressurization and heating, the metal laminate 10 is held in a heated state for a certain period of time at a temperature at which solid phase bonding can be started while applying a predetermined load.
  • An oxide film is formed on the Ag film 3 under normal temperature and pressure, but it is decomposed and removed by heating at 200 ° C. or higher. Therefore, the treatment is not limited to, for example, a treatment in a vacuum atmosphere or a treatment in a reducing atmosphere such as a formic acid, hydrogen or nitrogen atmosphere, and the surface of the Ag film 3 is subjected to pressurization and heating in the atmosphere.
  • the oxide film can be removed.
  • the temperature at which solid phase bonding can be started is generally 200 ° C. or higher in the case of Ag in the atmosphere, but 250 ° C. or higher and 400 ° C. or lower are preferable in consideration of deformation of members and diffusion of atoms.
  • the pressing force is not particularly limited, but it is preferably 0.1 MPa or more and 200 MPa or less, and lower than the strength of the member from the viewpoint of suppressing deformation.
  • the pressing force is more preferably 0.5 MPa or more and 100 MPa or less from the viewpoint of promoting bonding due to adhesion and suppressing deformation of the metal film due to softening.
  • the pressurization and heating time may be appropriately set according to the heating temperature and the pressing force, but is preferably 1 minute or more and 12 hours or less, and more preferably 10 minutes or more and 3 hours or less. preferable.
  • the Ag films 3 are pressed and heated to be brought into close contact with each other, so that the Zn atoms in the Zn film 2 are diffused into the Ag film 3 in the two metal laminates 10 and the Al base material is used.
  • a part of Al atoms in 1 and Ag atoms in Ag film 3 diffuse to each other.
  • the overall configuration is as follows: Al base material 1 / Al—Ag alloy layer 4 / Ag—Zn—Al alloy. It has a laminated structure of layer 5 / Al—Ag alloy layer 4 / Al base material 1.
  • a part of the Al base material 1 of the metal laminate 10 before joining remains as the Al base material 1 after joining.
  • a portion having an Al—Ag alloy layer on both sides of the Ag—Zn—Al alloy layer 5 and having a laminated structure of the Al—Ag alloy layer 4 / Ag—Zn—Al alloy layer 5 / Al—Ag alloy layer 4. Is the metal joint 100, and the Al base material 1 as the two members to be joined is joined via the metal joint 100.
  • each layer may have a concentration gradient due to the diffusion of atoms, but this does not cause a decrease in bonding strength. Therefore, the composition of each layer does not have to be uniform throughout the layer. Further, since the formed metal joint 100 is integrated with the Al base materials 1 on both sides thereof, the boundary between the layers may actually be unclear.
  • the Ag—Zn—Al alloy layer 5 contains Al in an amount of 1 atom% or more and 10 atom% or less, a Zn component in an amount of 1 atom% or more and 40 atom% or less, and Ag as a main component in the balance, when the whole is 100 atom%. It is preferable to contain it. Further, it is preferable that the Al—Ag alloy layer 4 contains Ag in an amount of 1 atom% or more and 10 atom% or less, and Al as a main component in the balance, when the whole is 100 atom%. It should be noted that the component ratio does not necessarily have to be this when the demand for joint strength is not so high.
  • the metal joint 100 and the member to be joined of the present embodiment are joined by solid phase bonding, and the conventional solder material, insert material, or the like is not used, and the bonding material does not protrude due to melting. Therefore, it has the effect of improving the dimensional stability. Further, this has the effect that the size of the entire member after joining can be reduced and the weight can be reduced.
  • the metal joint 100 is formed by solid phase bonding and the joint material is not melted, the joint material is like a solder material or an insert material. Since there is no protrusion or voids, the degree of freedom in design related to the joint area can be improved. Further, since the bonding is performed by solid phase bonding, the effect of being able to obtain a metal bonded body having high bonding reliability in which deformation due to melting is suppressed can be further achieved.
  • the metal joint 100 of the present embodiment contains Zn
  • the Al—Ag alloy layer 4 contains Al and the Ag—Zn—Al alloy layer 5 contains Ag as main components
  • Zn is used as the main component. Is not the main component, so it has the effect of being able to perform highly reliable bonding even in a high humidity environment.
  • the metal joint 100 as a whole is configured to contain Ag as a main component, which is superior in terms of thermal conductivity and heat resistance.
  • the method of joining the members to be joined according to the present embodiment does not require a vacuum atmosphere or a reducing atmosphere such as formic acid, hydrogen, nitrogen, etc., and can be joined in the atmosphere. Therefore, equipment such as a vacuum heating furnace and a heating reduction furnace is not required, the cost can be reduced, and the equipment maintenance management is easy. In addition, since bonding can be performed in a state in which oxidation of Zn and Al is suppressed in the atmosphere, there is an effect that bonding reliability can be improved.
  • FIG. 3 is a cross-sectional view showing the semiconductor device 2000 of the present embodiment.
  • the semiconductor device 2000 includes a metal base 11, a wiring substrate 12 to which a back surface conductor layer 12c is bonded to the metal base 11, and two semiconductors mounted on the front surface conductor layer 12b of the wiring substrate 12.
  • the metal joint 200 is provided both between the metal base 11 and the back surface conductor layer 12c of the wiring substrate 12 and between the front surface conductor layer 12b of the wiring substrate 12 and the semiconductor element 13.
  • the metal bonding body 200 is provided between the metal base and the wiring board and at least one of the wiring board and the semiconductor element. , Anything that is joined is sufficient.
  • the other is joined by, for example, solder, sintered silver, or the like. Can be done.
  • the metal base 11 is formed of Cu (copper). On the metal base 11, the back surface conductor layer 12c of the wiring substrate 12 is bonded via the metal joint body 200 and the Al films 21 provided on both sides of the metal joint body 200, and the back surface conductor layer 12c of the wiring substrate 12 is bonded to the outer peripheral side surface of the metal base 11. , The case 15 is adhered by the adhesive 14.
  • the metal base 11 is not limited to the Cu product, and may be formed of an alloy such as an AlSiC (aluminum-silicon carbide) alloy or a CuMo (copper-molybdenum) alloy.
  • the metal base may be formed of Al. In this case, it is not necessary to further form an Al film on the metal base, and the metal joint 200 can be provided in contact with the metal base.
  • the wiring board 12 includes a ceramic base material 12d made of AlN (aluminum nitride) as an insulating layer, surface conductor layers 12a and 12b made of Cu provided on both sides of the ceramic base material 12d, and a back surface. It is integrally formed with a conductor layer made of a conductor layer 12c. As shown in FIG. 3, surface conductor layers 12a and 12b are patterned as conductor layers on the surface of the wiring board 12 opposite to the back surface conductor layer 12c bonded to the metal base 11. The semiconductor element 13 is mounted on the surface conductor layer 12b.
  • AlN aluminum nitride
  • the present invention is not limited to this, and Al 2 O 3 (alumina), SiN (silicon nitride), etc. Ceramic material may be used. Further, a glass epoxy substrate can also be used as the wiring substrate. Further, the front surface conductor layers 12a and 12b and the back surface conductor layer 12c are not limited to those made of Cu, and may be made of, for example, Ni or Al.
  • front surface conductor layers 12a and 12b and the back surface conductor layer 12c are made of Al, it is not necessary to further provide an Al film on the front surface conductor layer and the back surface conductor layer, and the metal joint 100 of the first embodiment As described above, the front surface conductor layers 12a and 12b and the back surface conductor layer 12c can be joined as an Al base material.
  • the metal base 11 and the wiring board 12 are separately provided, but the present invention is not limited to this, and the metal base plate made of Cu, Al, or the like and the BN ( A metal-based insulating substrate in which an insulating layer in which a heat conductive filler such as boron nitride) or Al 2 O 3 is dispersed in an epoxy resin or the like is integrally laminated and has the functions of a metal base and a wiring board may be used. ..
  • a metal-based insulating substrate By using a metal-based insulating substrate, the weight and size of the semiconductor device can be reduced.
  • a metal joint 200 is provided between the metal-based insulating substrate and the semiconductor element and joined.
  • an IGBT Insulated Gate Bipolar Transistor / Insulated Gate Bipolar Transistor
  • a diode is each as semiconductor elements 13, respectively. It is joined and mounted via Al films 21 provided on both sides.
  • the semiconductor element 13 uses, for example, Si (silicon) as a semiconductor material. Further, as shown in FIG. 3, the Al film 21, the Zn film 22, and the Ag film 23 are formed in this order in the region on the surface conductor layer 12b where the semiconductor element 13 is not provided.
  • a semiconductor device including an IGBT and a diode as the semiconductor element 13 will be described, but the present invention is not limited to this, and is not limited to this.
  • a semiconductor element such as an effect transistor
  • a control IC Integrated Circuit / integrated circuit
  • SiC silicon carbide
  • GaAs gallium arsenide
  • GaN gallium nitride
  • diamond It may be used as a wide bandgap semiconductor material such as.
  • the present invention is not limited to this, and a discrete component in which one semiconductor element is mounted and 2 It may be configured as a pair mounted 2in1 or a pair mounted 6in1 or the like.
  • the case 15 is formed of PPS (polyphenylene sulfide), has a frame-like shape having a plurality of surfaces surrounding the outer periphery of the metal base 11 and the wiring substrate 12, and is adhered to the metal base 11 with a silicone adhesive 14. Has been done. A plurality of external terminals 16 made of Cu are attached to the case 15 by insert molding.
  • PPS polyphenylene sulfide
  • a thermoplastic resin such as PBT (polybutylene terephthalate) or PEEK (polyetheretherketone) is used. It may be formed of LCP (liquid crystal polymer).
  • the present invention is not limited to this, and the case is provided on the outer peripheral side surface of the wiring substrate.
  • the wiring board and the case can be joined by an adhesive.
  • the wire 17 is made of Al and electrically connects the surface conductor layers 12a and 12b of the wiring board 12, the semiconductor element 13, and the external terminal 16.
  • the wire 17 is made of Al
  • a Cu wire, an Al-coated Cu wire, an Au (gold) wire, or the like may be used. It is good, and a ribbon bond or the like can be used.
  • the circuit may be formed by soldering an electrode plate instead of the wire.
  • the sealing material 18 is filled in a region surrounded by the metal base 11 and the case 15, and seals the semiconductor element 13.
  • the sealing material 18 is formed of an electrically insulating resin such as an epoxy resin, a silicone resin, a urethane resin, a polyimide resin, a polyamide resin, or an acrylic resin.
  • the encapsulant 18 may be formed of an insulating composite material in which a filler that improves the mechanical strength and thermal conductivity of the encapsulant 18 is dispersed.
  • Fillers that improve the mechanical strength and thermal conductivity of the encapsulant 18 include, for example, SiO 2 (silicon dioxide), Al 2 O 3 (alumina), Al N (aluminum nitride), BN (boron nitride), Si 3 N 4 It may be formed of an inorganic ceramic material such as (silicon nitride), diamond, SiC (silicon carbide) or B 2 O 3 (boron oxide).
  • FIG. 4 is a cross-sectional view for explaining a method of joining the metal base 11 and the back surface conductor layer 12c of the wiring substrate 12, which is a part of the manufacturing process of the semiconductor device 2000 of the present embodiment
  • FIG. 5 is a semiconductor device. It is sectional drawing for demonstrating the joining method of the semiconductor element 13 which is a part of the manufacturing process of 2000, and the surface conductor layer 12b of a wiring substrate 12. Since the manufacturing method of the semiconductor device 2000 described in the present embodiment is partially common to the joining method of the member to be joined described in the first embodiment, the difference will be mainly described.
  • the back surface conductor layer 12c of the wiring board 12 is solid-phase bonded onto the metal base 11.
  • the metal joint 200 is formed, and the metal base 11 and the back surface conductor layer 12c are joined via the Al film 21 formed on both sides of the metal joint 200 and the metal joint 200.
  • an Al film 21 as an Al layer is formed on the metal base 11 as a member to be joined, a Zn film 22 is formed on the Al film 21, and then Zn is further formed.
  • An Al film 21, a Zn film 22, and an Ag film 23 are formed and laminated on the back surface conductor layer 12c of the wiring substrate 12 as a laminated body.
  • the Al film 21 is a thin film-like layer containing Al as a main component.
  • the Al film 21 may be a member containing Al as a main component, and may be, for example, a member containing Al as a main component and containing impurities in the balance, or a member composed only of Al.
  • the Al film 21 preferably contains 99 atom% or more of Al, which is the main component, and even more preferably 100 atom% of Al.
  • the Zn film 22 is a thin film-like layer containing Zn as a main component
  • the Ag film 23 is a thin film-like layer containing Ag as a main component. It is desirable that the Zn film 22 and the Ag film 23 contain 99 atom% or more of Zn or Ag, which are the main components, respectively, and it is further preferable that the Zn or Ag is 100 atom%. There is no problem even if the Zn film 22 and the Ag film 23 contain impurities in the balance.
  • the thickness of the Al film 21 is not particularly limited.
  • the Zn film 22 is preferably formed to be 0.1 ⁇ m or more and 2 ⁇ m or less from the viewpoint of forming an alloy by sufficient diffusion of atoms in order to secure stable adhesion.
  • the Ag film 23 is preferably formed to be 0.1 ⁇ m or more and 50 ⁇ m or less from the viewpoint of improving the bonding strength by sufficient diffusion of atoms and forming a more uniform film.
  • the method for forming the Al film 21, Zn film 22, and Ag film 23 is not particularly limited, and can be formed by, for example, electrolytic plating or electroless plating, as well as physical vapor deposition, chemical vapor deposition, sputtering, or the like.
  • the film forming conditions are not particularly limited and can be appropriately set according to the method and apparatus used.
  • the film thickness is determined by calculating an appropriate film formation time from the film formation rate in each of the methods.
  • the Ag films 23 are brought into close contact with each other by pressurizing and heating, so that the Zn atoms in the Zn film 22 are diffused into the Ag film 23 and one of the Al films 21 in the two laminated bodies.
  • the Al atom of the portion and the Ag atom in the Ag film 23 diffuse each other.
  • the bonding portion is the metal base 11 / Al film 21 / Al—Ag alloy layer 24 / Ag-. It has a laminated structure of Zn—Al alloy layer 25 / Al—Ag alloy layer 24 / Al film 21 / back surface conductor layer 12c.
  • the Al—Ag alloy layer 24 is provided on both sides of the Ag—Zn—Al alloy layer 25, and the Al—Ag alloy layer 24 / Ag—Zn—Al alloy layer 25 / Al—Ag alloy layer 24 is laminated.
  • the portion is a metal joint 200, and the metal base 11 and the back surface conductor layer 12c are joined via the metal joint 200 and the Al films 21 on both sides thereof.
  • each layer may have a concentration gradient due to the diffusion of atoms, but this does not cause a decrease in bonding strength. Therefore, the composition of each layer does not have to be uniform throughout the layer. Further, since the formed metal joint 200 is integrated with the Al films 21 on both sides thereof, the boundary between the layers is actually unclear.
  • the Ag—Zn—Al alloy layer 25 contains Al in an amount of 1 atom% or more and 10 atom% or less, a Zn component in an amount of 1 atom% or more and 40 atom% or less, and Ag as a main component in the balance, when the whole is 100 atom%. It is preferable to contain it. Further, it is preferable that the Al—Ag alloy layer 24 contains Ag in an amount of 1 atom% or more and 10 atom% or less, and Al as a main component in the balance, when the whole is 100 atom%. It should be noted that the component ratio does not necessarily have to be this when the demand for joint strength is not so high.
  • the metal joint 200 is formed, and the metal base 11 as a member to be joined and the back surface conductor layer 12c are formed via the Al film 21 formed on both sides of the metal joint 200 and the metal joint 200. Be joined.
  • the semiconductor element 13 is solid-phase bonded onto the surface conductor layer 12b of the wiring board 12.
  • the metal joint 200 is formed, and the surface conductor layer 12b and the semiconductor element 13 are joined via the Al film 21 formed on both sides of the metal joint 200 and the metal joint 200.
  • an Al film 21 as an Al layer is formed on the semiconductor element 13
  • a Zn film 22 is formed on the Al film 21, and further, an Al film of the Zn film 22 is formed.
  • An Al film 21, a Zn film 22, and an Ag film 23 are formed on the film to prepare a laminated body.
  • the present invention is not limited to this, and contributes to, for example, bonding.
  • the film may be formed only in the range of contact with the semiconductor element 13.
  • the Al film 21, the Zn film 22 and the Ag film 23 are sequentially formed on the semiconductor element 13 is shown here, for example, as an adhesion-imparting layer between the semiconductor element 13 and the Al film 21.
  • a Ti film may be formed. This is not limited in its type and film thickness as long as the adhesion can be ensured.
  • a film of various metals or the like may be further formed on the front surface conductor layer 12b or the back surface conductor layer 12c of the wiring board 12 or on the metal base 11.
  • the Al film 21 is a thin film-like layer containing Al as a main component.
  • the Al film 21 may be a member containing Al as a main component, and may be, for example, a member containing Al as a main component and containing impurities in the balance, or a member composed only of Al.
  • the Al film 21 preferably contains 99 atom% or more of Al, which is the main component, and even more preferably 100 atom% of Al.
  • the Zn film 22 is a thin film-like layer containing Zn as a main component
  • the Ag film 23 is a thin film-like layer containing Ag as a main component. It is desirable that the Zn film 22 and the Ag film 23 contain 99 atom% or more of Zn or Ag, which are the main components, respectively, and it is further preferable that the Zn or Ag is 100 atom%. There is no problem even if the Zn film 22 and the Ag film 23 contain impurities in the balance.
  • the thickness of the Al film 21 is not particularly limited.
  • the Zn film 22 is preferably formed to be 0.1 ⁇ m or more and 2 ⁇ m or less from the viewpoint of forming an alloy by sufficient diffusion of atoms in order to secure stable adhesion.
  • the Ag film 23 is preferably formed to be 0.1 ⁇ m or more and 50 ⁇ m or less from the viewpoint of improving the bonding strength by sufficient diffusion of atoms and forming a more uniform film.
  • the method for forming the Al film 21, Zn film 22, and Ag film 23 is not particularly limited, and can be formed by, for example, electrolytic plating or electroless plating, as well as physical vapor deposition, chemical vapor deposition, sputtering, or the like.
  • the film forming conditions are not particularly limited and can be appropriately set according to the method and apparatus used.
  • the film thickness is determined by calculating an appropriate film formation time from the film formation rate in each of the methods.
  • the exposed Ag films 23 face each other.
  • the Ag films 23 are brought into contact with each other (first step).
  • heating is performed while pressurizing the Ag films 23 in contact with each other to bring the Ag films 23 into close contact with each other (second step).
  • atoms are diffused between the layers, so that the semiconductor element 13 and the surface conductor layer 12b are solid-phase bonded via the metal bonding body 200. Since the conditions such as the temperature and pressure for solid-phase bonding are the same as the method for joining the members to be joined in the first embodiment, the description thereof will be omitted.
  • the Ag films 23 are brought into close contact with each other by pressurizing and heating, so that the Zn atoms in the Zn film 22 are diffused into the Ag film 23 and one of the Al films 21 in the two laminated bodies.
  • the Al atom of the portion and the Ag atom in the Ag film 23 diffuse each other.
  • the bonding portion is the semiconductor element 13 / Al film 21 / Al—Ag alloy layer 24 / Ag—. It has a laminated structure of Zn—Al alloy layer 25 / Al—Ag alloy layer 24 / Al film 21 / surface conductor layer 12b.
  • the Al—Ag alloy layer 24 is provided on both sides of the Ag—Zn—Al alloy layer 25, and the Al—Ag alloy layer 24 / Ag—Zn—Al alloy layer 25 / Al—Ag alloy layer 24 is laminated.
  • the portion is a metal joint 200, and the semiconductor element 13 and the surface conductor layer 12b are joined via the metal joint 200 and the Al films 21 on both sides thereof.
  • each layer may have a concentration gradient due to the diffusion of atoms, but this does not cause a decrease in bonding strength. Therefore, the composition of each layer does not have to be uniform throughout the layer. Further, since the formed metal joint 200 is integrated with the Al films 21 on both sides thereof, the boundary between the layers is actually unclear.
  • the Ag—Zn—Al alloy layer 25 contains Al in an amount of 1 atom% or more and 10 atom% or less, a Zn component in an amount of 1 atom% or more and 40 atom% or less, and Ag as a main component in the balance, when the whole is 100 atom%. It is preferable to contain it. Further, it is preferable that the Al—Ag alloy layer 24 contains Ag in an amount of 1 atom% or more and 10 atom% or less, and Al as a main component in the balance, when the whole is 100 atom%. It should be noted that the component ratio does not necessarily have to be this when the demand for joint strength is not so high.
  • the Al—Ag alloy layer 24 / Ag—Zn—Al alloy layer 25 / Al— as the solid phase bonding portion is provided only in the range where the Ag film 23 on the semiconductor element 13 is in contact with the surface conductor layer 12b.
  • An example is shown in which the metal joint 200 made of the Ag alloy layer 24 is formed, and the Al film 21 / Zn film 22 / Ag film 23 remains in the other range on the surface conductor layer 12b, but the present invention is limited to this.
  • the Al—Ag alloy layer 24 and the Ag—Zn—Al alloy layer 25 may be sequentially laminated and formed on the surface conductor layer 12b of the wiring substrate 12 even in the range where the semiconductor element 13 is not mounted. This is because the atoms are diffused by heating even if the Ag films 21 are not in close contact with each other.
  • the metal joint 200 is formed, and the surface conductor layer 12b and the semiconductor element 13 as the members to be joined are formed via the Al film 21 formed on both sides of the metal joint 200 and the metal joint 200. Be joined.
  • the present invention is not limited to this, and the bonding between the back surface conductor layer 12c and the metal base 11 and between the front surface conductor layer 12b and the semiconductor element 13 may be performed at the same time.
  • the outer peripheral side surface of the metal base 11 joined to the wiring substrate 12 on which the semiconductor element 13 is mounted and the case 15 are bonded to each other using a silicone adhesive 14. do.
  • a plurality of wires 17 are formed by wire bonding, respectively, and the surface conductor layers 12a and 12b of the wiring board 12, the semiconductor element 13 and the external terminal 16 are electrically connected.
  • the electrode plate is electrically connected by soldering in this step.
  • the liquid resin material is focused on the area surrounded by the metal base 11 and the case 15 and cured by heating.
  • the semiconductor element 13 is insulated and sealed by the sealing material 18. From the above, the semiconductor device 2000 is completed.
  • the bonding by the metal bonding body 200 of the semiconductor device 2000 of the present embodiment has a bonding strength several times higher than the bonding strength by the conventionally used solder material, the resistance to deterioration due to strain due to thermal stress is improved. It has the effect of improving heat resistance. Further, since the joint portion formed by the metal joint 200 contains Ag as a main component as a whole, the melting point exceeds 900 ° C. Therefore, as compared with a solder material having a melting point of about 200 ° C., melting or the like does not occur even in a high temperature operating environment, and the effect of improving the joining reliability can be obtained.
  • the semiconductor device 2000 of the present embodiment has heat resistance even for such a semiconductor device operating at a high temperature, and has an effect of improving reliability.
  • the manufacturing method of the semiconductor device 2000 of the present embodiment in order to form a metal film by a film forming method such as electrolytic plating, a method of forming a bonding layer by printing or insulating a member such as a brazing material.
  • a film forming method such as electrolytic plating
  • a method of forming a bonding layer by printing or insulating a member such as a brazing material in order to form a metal film by a film forming method such as electrolytic plating, a method of forming a bonding layer by printing or insulating a member such as a brazing material.
  • the configuration in which the metal joint 200 is provided in the semiconductor device provided with the case has been described as an example, but a metal is used between the semiconductor element and the wiring board or between the wiring board and the metal base. Needless to say, as long as the bonded body 200 is provided and joined, for example, a molded semiconductor device without a case may be used.
  • FIG. 6 is a perspective view for explaining the waveguide 3000 of the present embodiment
  • FIG. 7 is a cross-sectional view of the waveguide 3000 in the line AA of FIG. 6 (B).
  • FIG. 8 is a cross-sectional view for explaining a method of manufacturing the waveguide 3000 of the present embodiment.
  • the overall configuration of the waveguide 3000 will be briefly described with reference to FIGS. 6 and 7.
  • the details of the waveguide 3000 will be described later in the description of the manufacturing method of the waveguide 3000.
  • the waveguide 3000 is used, for example, for an antenna, and as shown in FIG. 6 (A), a long plate-shaped upper Al member 31a and a long plate-shaped lower Al member having a concave cross section. It is joined to 31b, and as shown in FIG. 6B, the inside is integrally molded into a hollow cylindrical shape.
  • a part of the side wall of the waveguide 3000 is a metal having an Al—Ag alloy layer 34 on both sides of the Ag—Zn—Al alloy layer 35, as shown in FIG. 7A cross-sectional view of FIG. 6 (B). It is joined by forming the joining body 300.
  • the metal joint 300 and the like, which are the joints, are omitted.
  • the metal joint 300 provided in the waveguide 3000 is a portion for joining the upper Al member 31a and the lower Al member 31b, and the Al—Ag alloy layer 34 is provided on both sides of the Ag—Zn—Al alloy layer 35. It is a formed and laminated part. That is, at least at the joint between the upper Al member 31a and the lower Al member 31b, a metal joint 300 made of an Al—Ag alloy layer 34 / Ag—Zn—Al alloy layer 35 / Al—Ag alloy layer 34 is provided.
  • the overall structure of the laminated body at the joint portion on the side wall is as follows: upper Al member 31a / Al—Ag alloy layer 34 / Ag-Zn—Al alloy layer 35 / Al—Ag alloy layer 34 / lower Al member 31b. It has become.
  • a Zn film 32 is formed on the upper Al member 31a (Al layer) as a member to be joined, and the Zn film 32 is bonded onto the upper Al member 31a of the Zn film 32.
  • the lower laminated body 30b which was sequentially laminated by forming the Ag film 33, and the lower laminated body 30b are produced.
  • the upper Al member 31a and the lower Al member 31b are Al alloy members containing Al as a main component.
  • the upper Al member 31a and the lower Al member 31b are not limited to Al alloy members as long as they contain Al as a main component, and may be, for example, a member containing Al as a main component and containing impurities in the balance. A member composed of only Al may be used.
  • the upper Al member 31a and the lower Al member 31b preferably contain 99 atom% or more of Al, which is a main component, and even more preferably 100 atom% of Al.
  • the Zn film 32 is a thin film-like layer containing Zn as a main component
  • the Ag film 33 is a thin film-like layer containing Ag as a main component. It is desirable that the Zn film 32 and the Ag film 33 contain 99 atom% or more of Zn or Ag, which are the main components, respectively, and it is further preferable that the Zn or Ag is 100 atom%. There is no problem even if the Zn film 32 and the Ag film 33 contain impurities in the balance.
  • the thickness of the upper Al member 31a and the lower Al member 31b as the members to be joined is not particularly limited.
  • the Zn film 32 is preferably formed to be 0.1 ⁇ m or more and 2 ⁇ m or less from the viewpoint of forming an alloy by sufficient diffusion of atoms in order to secure stable adhesion.
  • the Ag film 33 is preferably formed to be 0.1 ⁇ m or more and 50 ⁇ m or less from the viewpoint of improving the bonding strength by sufficient diffusion of atoms and forming a more uniform film.
  • the method for forming the Zn film 32 and the Ag film 33 is not particularly limited, and can be formed by, for example, electrolytic plating or electroless plating, as well as physical vapor deposition, chemical vapor deposition, sputtering, or the like.
  • the film forming conditions are not particularly limited and can be appropriately set according to the method and apparatus used.
  • the film thickness is determined by calculating an appropriate film formation time from the film formation rate in each of the methods.
  • the Ag films 33 of the upper laminated body 30a and the lower laminated body 30b are brought into contact with each other (first step).
  • heating is performed while pressurizing the Ag films 33 in contact with each other to bring the Ag films 33 into close contact with each other (second step).
  • second step heating is performed while pressurizing the Ag films 33 in contact with each other to bring the Ag films 33 into close contact with each other (second step).
  • atoms are diffused between the layers, so that the upper laminate 30a and the lower laminate 30b are solid-phase bonded. Since the conditions such as the temperature and pressure of the solid phase bonding are the same as the manufacturing method of the metal bonding body 100 of the first embodiment, the description thereof will be omitted.
  • the bonding portion is the upper Al member 31a / Al—Ag alloy layer 34 / Ag—. It has a laminated structure of Zn—Al alloy layer 35 / Al—Ag alloy layer 34 / lower Al member 31b. At this time, a part of the upper Al member 31a and the lower Al member 31b before joining remains as the upper Al member 31a and the lower Al member 31b after joining. Then, the Al—Ag alloy layer 34 is provided on both sides of the Ag—Zn—Al alloy layer 35, and the Al—Ag alloy layer 34 / Ag—Zn—Al alloy layer 35 / Al—Ag alloy layer 34 is laminated.
  • the portion is a metal joint body 300, and the upper Al member 31a and the lower Al member 31b are joined by the metal joint body 300 to complete the waveguide 3000.
  • each layer may have a concentration gradient due to the diffusion of atoms, but this does not cause a decrease in bonding strength. Therefore, the composition of each layer does not have to be uniform throughout the layer. Further, since the formed metal joint 300 is integrated with the upper Al member 31a, the lower Al member 31b, the Zn film 32, and the Ag film 33, the boundary between the layers is actually unclear.
  • the Ag—Zn—Al alloy layer 35 contains Al in an amount of 1 atom% or more and 10 atom% or less, a Zn component in an amount of 1 atom% or more and 40 atom% or less, and Ag as a main component in the balance, when the whole is 100 atom%. It is preferable to contain it. Further, the Al—Ag alloy layer 34 preferably contains Ag in an amount of 1 atom% or more and 10 atom% or less, and Al as a main component in the balance, when the whole is 100 atom%. It should be noted that the component ratio does not necessarily have to be this when the demand for joint strength is not so high.
  • the metal joint 300 has a rectangular shape in cross-sectional view, that is, the Al—Ag alloy layer 34 on the upper Al member 31a side and the Al—Ag alloy layer 34 on the lower Al member 31b side. Is formed with the same width, but the present invention is not limited to this, and the Al—Ag alloy layer 34 on the upper Al member 31a side is larger than the Al—Ag alloy layer 34 on the lower Al member 31b side. May be formed wider.
  • the metal joint 300 has a structure in which the width gradually decreases from the Al—Ag alloy layer 34 on the upper Al member 31a side to the Al—Ag alloy layer 34 on the lower Al member 31b side.
  • the method for manufacturing the waveguide 3000 and the waveguide 3000 of the present embodiment does not require the seating surface of the screw and the thickness of the member corresponding to the seating surface of the screw, which is indispensable for the fastening structure with screws or the like, and has a degree of freedom in design. Has the effect of improving.
  • the thin film has the effect of integrating the shape and reducing the weight.
  • the thickness of the upper Al member 31a and the lower Al member 31b is reduced, activation using a flux and heating to the melting point of the brazing material are not required as in brazing, and thus thermal deformation due to heating is not required. It has the effect of suppressing the contraction and deformation of the member due to the above.
  • the brazing material may protrude into the waveguide, and if the brazing material is used, there is a concern that the shape may become unstable due to variations in thickness. ..
  • FIG. 9 is a cross-sectional view showing a waveguide 3001 which is a modification of the waveguide 3000 of the present embodiment.
  • FIG. 10 is a cross-sectional view for explaining a method of manufacturing the waveguide 3001.
  • the characteristics such as electrical conductivity are improved, but it is not always necessary to perform Ag-plating on the whole, and the required characteristics are satisfied even if Al is left as it is. In some cases. Further, especially when the member before joining is uneven, it is difficult to form a uniform film by plating or the like. For example, when the thickness is required to be accurate due to groove formation or the like, an Ag film is not formed on the entire surface. Sometimes it's better. Therefore, it is necessary to select a film forming method or partially form a film according to the required electrical characteristics and structure.
  • the Zn film 22 and the Ag film 23 are not formed in the region other than the joint portion between the upper Al member 31a and the lower Al member 31b.
  • the waveguide 3000 of the present embodiment Since the other configurations of the waveguide 3001 and the metal joint 301 are the same as those of the waveguide 3000 and the metal joint 300 of the present embodiment, the differences will be mainly described below.
  • the waveguide 3001 has a long-axis plate-shaped upper Al member 31a and a long-axis lower Al member 31b having a concave cross section, and has a hollow cylindrical shape inside. It is integrally molded. As shown in FIG. 9, the side walls of the waveguide 3001 are joined by forming a metal joint 301 having an Al—Ag alloy layer 34 on both sides of the Ag—Zn—Al alloy layer 35.
  • a lower laminated body 36b in which the Zn film 32 and the Ag film 33 are sequentially laminated only on the joint portion of the Al member 31b is produced.
  • the upper laminate 36a and the lower laminate 36b are produced by masking a portion other than the joint portion in advance and then forming a film, or by removing the portion other than the joint portion by cutting or the like after forming a film on the entire surface. can do.
  • FIG. 10 (A) the Ag films 33 whose surfaces are exposed are opposed to each other, and then, as shown in FIG. 10 (B), the Ag films of the upper laminated body 36a and the lower laminated body 36b are opposed to each other.
  • the 33 are brought into contact with each other (first step).
  • heating is performed while pressurizing the Ag films 33 in contact with each other to bring the Ag films 33 into close contact with each other (second step).
  • the atoms are diffused between the layers, so that the upper laminated body 36a and the lower laminated body 36b are solid-phase bonded.
  • the upper Al member 31a / Al—Ag alloy layer 34 / It has a laminated structure of Ag—Zn—Al alloy layer 35 / Al—Ag alloy layer 34 / lower Al member 31b.
  • the Al—Ag alloy layer 34 is provided on both sides of the Ag—Zn—Al alloy layer 35, and the Al—Ag alloy layer 34 / Ag—Zn—Al alloy layer 35 / Al—Ag alloy layer 34 is laminated.
  • the portion is a metal joint body 301, and the metal joint body 301 joins the upper Al member 31a and the lower Al member 31b as a member to be joined to complete the waveguide 3001.
  • the accuracy can be maintained in the place where the accuracy is required for the thickness by groove forming or the like, and the design is free. It has the effect of improving the degree and suppressing shape variation.
  • the present invention is not limited to this, for example. It may be formed by joining two members having a concave cross section. Further, the heights of the joint surfaces do not have to be constant, and the joint surfaces may have irregularities. Further, the structure is not limited to the joining of two members, and may be a multi-layer structure such as a three-layer structure composed of an upper portion, a side portion and a lower portion.
  • Table 1 shows, for each Example and each Comparative Example, the film thickness of the Zn film and the film thickness of the Ag film in the laminated body before bonding, the Ag ratio in the Al—Ag alloy layer in the metal bonding body after bonding, and Ag—.
  • the Zn ratio in the Zn—Al alloy layer, the Al ratio in the Ag—Zn—Al alloy layer, and the bonding reliability are shown.
  • FIG. 11 is a graph showing the bonding strength with respect to the Ag content in the Al—Ag alloy layer
  • FIG. 12 is a graph showing the bonding strength with respect to the Zn content in the Ag—Zn—Al alloy layer
  • FIGS. 11 to 13 is a graph showing the bonding strength with respect to the Zn content in the Ag—Zn—Al alloy layer. It is a graph which shows the bonding strength with respect to the Al content in the Ag—Zn—Al alloy layer.
  • the graphs of FIGS. 11 to 13 include plots of data of each example and each comparative example shown in Table 1.
  • Example 1 First, the surface of the Al alloy member is flattened by machining, and then a 0.3 ⁇ m Zn film is formed on the Al alloy member by a plating process with a film forming time of 45 seconds, and a film forming time of 34 minutes is further formed on the Zn film.
  • a metal laminate was produced by sequentially forming a 5 ⁇ m Ag film by the plating treatment.
  • the Ag films of the metal laminates are brought into contact with each other, heated at 320 ° C. while being pressurized at 10 MPa in the atmosphere for 1 hour, and solid-phase bonded to form a metal bonded body.
  • the metal joint of Example 1 produced as described above is a portion in which Al—Ag alloy layers are provided on both sides of the Ag—Zn—Al alloy layer and the Al alloy members are bonded to each other.
  • the metal joint of Example 1 contains 8.0 atom% of Ag in the Al—Ag alloy layer, 6.0 atom% of Zn and 2.0 atom% of Al in the Ag—Zn—Al alloy layer. rice field.
  • Example 2 First, the surface of the Al alloy member is flattened by machining, and then a 0.3 ⁇ m Zn film is formed on the Al alloy member by a plating process with a film forming time of 45 seconds, and then a film forming time of 31 minutes is formed on the Zn film.
  • a metal laminate was produced by sequentially forming a 2 ⁇ m Ag film by the plating treatment.
  • the Ag films of the metal laminates are brought into contact with each other, heated at 320 ° C. while being pressurized at 20 MPa in the air for 1 hour, and then solid-phase bonded to form a metal bond. I got a body.
  • the metal joint of Example 2 produced as described above is a portion in which Al—Ag alloy layers are provided on both sides of the Ag—Zn—Al alloy layer and the Al alloy members are bonded to each other.
  • the metal joint of Example 2 contains 3.0 atom% of Ag in the Al—Ag alloy layer, 17.0 atom% of Zn in the Ag—Zn—Al alloy layer, and 2.2 atom% of Al. rice field.
  • Example 3 First, the surface of the Al alloy member was flattened by machining, and then a 1 ⁇ m Zn film was formed on the Al alloy member by a plating process with a film forming time of 2 minutes, and then a film forming time of 34 minutes was formed on the Zn film. A metal laminate was produced by sequentially forming a 5 ⁇ m Ag film by plating.
  • the Ag films of the metal laminates are brought into contact with each other, heated at 320 ° C. while being pressurized at 10 MPa in the atmosphere for 2 hours, and solid-phase bonded to form a metal bonded body.
  • the metal joint of Example 3 produced as described above is a portion in which Al—Ag alloy layers are provided on both sides of the Ag—Zn—Al alloy layer and the Al alloy members are bonded to each other.
  • the metal joint of Example 3 contains 5.0 atom% of Ag in the Al—Ag alloy layer, 24.0 atom% of Zn in the Ag—Zn—Al alloy layer, and 3.6 atom% of Al. rice field.
  • Example 4 First, the surface of the Al alloy member is flattened by machining, and then a 0.3 ⁇ m Zn film is formed on the Al alloy member by a plating process with a film forming time of 45 seconds, and then a film forming time of 80 minutes is formed on the Zn film.
  • a metal laminate was produced by sequentially forming a 1 ⁇ m Ag film by the plating treatment.
  • the Ag films of the metal laminates are brought into contact with each other, heated at 320 ° C. while being pressurized at 20 MPa in the atmosphere for 2 hours, and solid-phase bonded to form a metal bonded body.
  • the metal joint of Example 4 produced as described above is a portion in which Al—Ag alloy layers are provided on both sides of the Ag—Zn—Al alloy layer and the Al alloy members are bonded to each other.
  • the metal joint of Example 4 contains 2.0 atom% of Ag in the Al—Ag alloy layer, 33.0 atom% of Zn and 4.2 atom% of Al in the Ag—Zn—Al alloy layer. rice field.
  • ⁇ Comparative example 1> First, the surface of the Al alloy member is flattened by machining, and then a 0.1 ⁇ m Zn film is formed on the Al alloy member by a plating process with a film forming time of 20 seconds, and a film forming time of 44 minutes is further formed on the Zn film.
  • a metal laminate was produced by sequentially forming a 15 ⁇ m Ag film by the plating treatment.
  • the Ag films of the metal laminates are brought into contact with each other, heated at 350 ° C. while being pressurized at 20 MPa in the atmosphere for 4 hours, and solid-phase bonded to form a metal bonded body.
  • the metal joint of Comparative Example 1 produced as described above is a portion in which Al—Ag alloy layers are provided on both sides of the Ag—Zn—Al alloy layer and the Al alloy members are bonded to each other.
  • the metal joint of Comparative Example 1 contained 13.0 atom% of Ag in the Al—Ag alloy layer, 0.6 atom% of Zn and 11.0 atom% of Al in the Ag—Zn—Al alloy layer. rice field.
  • ⁇ Comparative example 2> First, the surface of the Al alloy member is flattened by machining, and then a 0.3 ⁇ m Zn film is formed on the Al alloy member by a plating process with a film forming time of 45 seconds, and then a film forming time of 30 minutes is formed on the Zn film. A metal laminate was produced by sequentially forming a 0.5 ⁇ m Ag film by the plating treatment.
  • the Ag films of the metal laminates are brought into contact with each other, heated at 280 ° C. while being pressurized at 20 MPa in the atmosphere for 4 hours, and solid-phase bonded to form a metal bonded body.
  • the metal joint of Comparative Example 2 produced as described above is a portion in which Al—Ag alloy layers are provided on both sides of the Ag—Zn—Al alloy layer and the Al alloy members are bonded to each other.
  • the metal joint of Comparative Example 2 contained 0.2 atom% of Ag in the Al—Ag alloy layer, 47.0 atom% of Zn and 0.5 atom% of Al in the Ag—Zn—Al alloy layer. rice field.
  • bonding reliability For the determination of bonding reliability shown in Table 1, 50 MPa, which is the bonding strength of the solder material used for bonding semiconductor devices and waveguides, is used as an index.
  • 50 MPa which is the bonding strength of the solder material used for bonding semiconductor devices and waveguides.
  • Table 1 if the measured joint strength is 50 MPa or more, it is judged that the joint reliability is high, and if it is less than 50 MPa, it is judged that the joint reliability is inferior, and it is shown as ⁇ .
  • 4 samples judged to have high bonding reliability when the measured bonding strength is 50 MPa or more are Examples 1 to 4
  • 2 samples determined to be inferior in bonding reliability when the measured bonding strength is less than 50 MPa are comparative examples. It is 1-2.
  • the bonding strength is 50 MPa or more, which is the standard, in the range where the Ag content in the Al—Ag alloy layer is 1 atom% or more and 10 atom% or less. Therefore, it can be said that the Al—Ag alloy layer of the metal joint preferably contains Ag in an amount of 1 atom% or more and 10 atom% or less. Also in Table 1, in Examples 1 to 4 having high bonding reliability, the Ag content in the Al—Ag alloy layer is within the range of 1 atom% or more and 10 atom% or less.
  • the Zn content in the Ag—Zn—Al alloy layer is in the range of 1 atom% or more and 40 atom% or less, and the bonding strength is 50 MPa or more as a reference. Therefore, it can be said that it is preferable that Zn is contained in 1 atom% or more and 40 atom% or less in the Ag—Zn—Al alloy layer of the metal joint. Also in Table 1, in Examples 1 to 4 having high bonding reliability, the Zn content in the Ag—Zn—Al alloy layer is within the range of 1 atom% or more and 40 atom% or less.
  • the Al content in the Ag—Zn—Al alloy layer is in the range of 1 atom% or more and 10 atom% or less, and the bonding strength is 50 MPa or more as a reference. Therefore, it can be said that the Ag—Zn—Al alloy layer of the metal joint preferably contains Al in an amount of 1 atom% or more and 10 atom% or less. Also in Table 1, in Examples 1 to 4 having high bonding reliability, the Al content in the Ag—Zn—Al alloy layer is within the range of 1 atom% or more and 10 atom% or less.
  • the Ag—Zn—Al alloy layer contains Al in an amount of 1 atom% or more and 10 atom% or less, a Zn component in an amount of 1 atom% or more and 40 atom% or less, and Ag in the balance, when the whole is 100 atom%.
  • the Al—Ag alloy layer preferably contains Ag in an amount of 1 atom% or more and 10 atom% or less, and Al in the balance as a main component, when the whole is 100 atom%.
  • the requirement for bonding strength is less than 50 MPa, the component ratio does not necessarily have to be this.
  • Al base material Al layer
  • 10 metal laminate 11 Metal base, 12 Wiring board, 12a, 12b Front conductor layer, 12c Back conductor layer, 12d Ceramic base material, 13 Semiconductor element, 14 Adhesive, 15 Case, 16 External terminal, 17 Wire, 18 Encapsulant, 21 Al film (Al layer), 30a, 36a upper laminate, 30b, 36b lower laminate, 31a Upper Al member (Al layer), 31b Lower Al member (Al layer), 100, 200, 300, 301 metal joints, 2000 semiconductor device, 3000, 3001 Waveguide

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
PCT/JP2020/014085 2020-03-27 2020-03-27 金属接合体、半導体装置、導波管及び被接合部材の接合方法 Ceased WO2021192239A1 (ja)

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US17/792,404 US12412861B2 (en) 2020-03-27 2020-03-27 Metal jointed body, semiconductor device, wave guide tube, and method for joining members to be joined
CN202080098782.0A CN115297986B (zh) 2020-03-27 2020-03-27 金属接合体、半导体装置、波导管及被接合构件的接合方法
DE112020006983.4T DE112020006983T5 (de) 2020-03-27 2020-03-27 Mit Metall zusammengefügter Körper, Halbleitereinheit, Wellenleiterrohr und Verfahren zum Verbinden von zu verbindenden Elementen
PCT/JP2020/014085 WO2021192239A1 (ja) 2020-03-27 2020-03-27 金属接合体、半導体装置、導波管及び被接合部材の接合方法
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WO2012029789A1 (ja) * 2010-08-31 2012-03-08 日産自動車株式会社 アルミニウム系金属の接合方法
JP2015123485A (ja) * 2013-12-27 2015-07-06 三菱電機株式会社 接合方法および電力用半導体装置

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JPH10313214A (ja) * 1997-05-13 1998-11-24 Nippon Steel Corp アンテナおよびその製造方法
WO2012029789A1 (ja) * 2010-08-31 2012-03-08 日産自動車株式会社 アルミニウム系金属の接合方法
JP2015123485A (ja) * 2013-12-27 2015-07-06 三菱電機株式会社 接合方法および電力用半導体装置

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