WO2021186921A1 - 撮像素子および撮像装置 - Google Patents

撮像素子および撮像装置 Download PDF

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Publication number
WO2021186921A1
WO2021186921A1 PCT/JP2021/003680 JP2021003680W WO2021186921A1 WO 2021186921 A1 WO2021186921 A1 WO 2021186921A1 JP 2021003680 W JP2021003680 W JP 2021003680W WO 2021186921 A1 WO2021186921 A1 WO 2021186921A1
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WIPO (PCT)
Prior art keywords
unit
semiconductor substrate
charge
charge transfer
image pickup
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Ceased
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PCT/JP2021/003680
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English (en)
French (fr)
Japanese (ja)
Inventor
達也 高野
健太郎 江田
慎太郎 奥城
邦朗 内海
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to US17/910,599 priority Critical patent/US20230154948A1/en
Priority to JP2022508113A priority patent/JPWO2021186921A1/ja
Priority to CN202180020440.1A priority patent/CN115244919B/zh
Priority to DE112021001701.2T priority patent/DE112021001701T5/de
Publication of WO2021186921A1 publication Critical patent/WO2021186921A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

Definitions

  • the present disclosure relates to an image sensor and an image pickup device. Specifically, an image pickup device in which pixels having a vertical transistor that transfers charges generated by photoelectric conversion in a photoelectric conversion unit arranged on the semiconductor substrate in the thickness direction of the semiconductor substrate are arranged, and an image pickup device using the image pickup device. Regarding.
  • an image sensor in which pixels that generate an image signal based on incident light are arranged in a two-dimensional grid pattern has been used.
  • a photodiode that generates an electric charge according to the incident light by photoelectric conversion and a floating diffusion to which the generated electric charge is transferred are arranged in this pixel.
  • An image signal is generated based on the charge transferred to this floating diffusion.
  • the pixel is further arranged with a transfer transistor that transfers the charge generated by the photodiode to the floating diffusion.
  • An image sensor that uses a vertical transistor for this transfer transistor has been proposed (see, for example, Patent Document 1).
  • a vertical transistor is a transistor in which a gate electrode and a gate insulating film are embedded in a semiconductor substrate.
  • This vertical transistor is configured by arranging a gate insulating film and a gate electrode in holes formed in a semiconductor substrate by dry etching.
  • the gate insulating film is composed of a silicon oxide (SiO 2 ) film formed on the bottom surface and side surfaces of the hole by radical oxidation or plasma oxidation.
  • the gate electrode is made of polycrystalline silicon and is arranged adjacent to the gate insulating film of the hole.
  • the channel of the vertical transistor is formed along the outer circumference of the embedded gate insulating film.
  • the above-mentioned conventional technique has a problem that the charge transfer path of the transfer transistor becomes long.
  • the vertical transistor is configured in the shape in which the gate insulating film and the gate electrode are embedded in the holes formed in the semiconductor substrate, it is difficult to finely process the gate region, and the photodiode and the floating diffusion are difficult to process. The distance between them becomes longer. Therefore, the charge transfer path becomes long and the transfer efficiency decreases.
  • the present disclosure has been made in view of the above-mentioned problems, and an object of the present disclosure is to shorten the charge transfer path of a transfer transistor composed of a vertical transistor.
  • the present disclosure has been made to solve the above-mentioned problems, and the first aspect thereof is a photoelectric conversion unit which is arranged on a semiconductor substrate and generates an electric charge according to incident light by photoelectric conversion, and the above-mentioned.
  • a charge holding portion for holding an electric charge, a polygonal opening formed on the semiconductor substrate in a plan view, and an embedded gate arranged in the opening are provided, and the charge is transferred from the photoelectric conversion unit to the charge holding portion.
  • It is an image pickup device including a charge transfer unit for transferring to and an image signal generation unit for generating an image signal based on the retained charge.
  • the charge transfer unit may include the hexagonal or larger polygonal opening.
  • the charge transfer unit may include the polygonal opening having an internal angle of the apex of 120 to 150 degrees.
  • the charge transfer unit may include the octagonal opening.
  • the charge transfer unit may include the polygonal opening formed by recrystallizing the members constituting the semiconductor substrate.
  • the photoelectric conversion unit may be provided with a boundary surface parallel to the polygonal side of the opening of the charge transfer unit.
  • the charge holding portion may be provided with a boundary surface parallel to the polygonal side of the opening of the charge transfer portion.
  • the charge transfer unit may further include a gate insulating film arranged between the semiconductor substrate and the embedded gate.
  • the charge transfer unit may include the gate insulating film formed by oxidizing the semiconductor substrate.
  • the charge transfer unit may include the gate insulating film formed by oxidizing the semiconductor substrate with oxygen radicals.
  • the semiconductor substrate may be made of silicon.
  • the charge transfer unit may further include a high impurity concentration region which is arranged on the semiconductor substrate adjacent to the opening and is composed of a high impurity concentration.
  • the charge transfer unit may further include a substrate surface gate that is adjacent to the embedded gate and has a shape that covers the high impurity concentration region on the surface side of the semiconductor substrate. ..
  • a second high impurity concentration region which is adjacent to the photoelectric conversion unit and is arranged on the surface side of the semiconductor substrate to have a high impurity concentration may be further provided.
  • the second aspect of the present disclosure is formed on the semiconductor substrate, a photoelectric conversion unit which is arranged on the semiconductor substrate and generates an electric charge according to the incident light by photoelectric conversion, a charge holding unit which holds the electric charge, and the semiconductor substrate.
  • a charge transfer unit that includes a polygonal opening and an embedded gate arranged in the opening in a plan view and transfers the charge from the photoelectric conversion unit to the charge holding unit, and a charge transfer unit that holds the charge.
  • the charge transfer portion has an effect of forming a channel along the polygonal opening.
  • FIG. 1 is a diagram showing a configuration example of an image sensor according to an embodiment of the present disclosure.
  • the image sensor 1 in the figure includes a pixel array unit 10, a vertical drive unit 20, a column signal processing unit 30, and a control unit 40.
  • the pixel array unit 10 is configured by arranging the pixels 100 in a two-dimensional grid pattern.
  • the pixel 100 generates an image signal according to the irradiated light.
  • the pixel 100 has a photoelectric conversion unit that generates an electric charge according to the irradiated light.
  • the pixel 100 further has a pixel circuit. This pixel circuit generates an image signal based on the electric charge generated by the photoelectric conversion unit. The generation of the image signal is controlled by the control signal generated by the vertical drive unit 20 described later.
  • the signal lines 11 and 12 are arranged in the pixel array unit 10 in an XY matrix.
  • the signal line 11 is a signal line that transmits a control signal of the pixel circuit in the pixel 100, is arranged for each line of the pixel array unit 10, and is commonly wired to the pixel 100 arranged in each line.
  • the signal line 12 is a signal line for transmitting an image signal generated by the pixel circuit of the pixel 100, is arranged in each row of the pixel array unit 10, and is commonly wired to the pixel 100 arranged in each row.
  • NS These photoelectric conversion units and pixel circuits are formed on a semiconductor substrate.
  • the vertical drive unit 20 generates a control signal for the pixel circuit of the pixel 100.
  • the vertical drive unit 20 transmits the generated control signal to the pixel 100 via the signal line 11 in the figure.
  • the column signal processing unit 30 processes the image signal generated by the pixel 100.
  • the column signal processing unit 30 processes the image signal transmitted from the pixel 100 via the signal line 12 in the figure.
  • the processing in the column signal processing unit 30 corresponds to, for example, analog-to-digital conversion that converts an analog image signal generated in the pixel 100 into a digital image signal.
  • the image signal processed by the column signal processing unit 30 is output as an image signal of the image sensor 1.
  • the control unit 40 controls the entire image sensor 1.
  • the control unit 40 controls the image sensor 1 by generating and outputting a control signal for controlling the vertical drive unit 20 and the column signal processing unit 30.
  • the control signal generated by the control unit 40 is transmitted to the vertical drive unit 20 and the column signal processing unit 30 by the signal lines 41 and 42, respectively.
  • the column signal processing unit 30 is an example of the processing circuit described in the claims.
  • FIG. 2 is a diagram showing a configuration example of pixels according to the embodiment of the present disclosure.
  • the figure is a circuit diagram showing a configuration example of the pixel 100.
  • the pixel 100 in the figure includes a photoelectric conversion unit 101, a charge holding unit 102, a charge transfer unit 103, and MOS transistors 104 to 106.
  • the charge transfer unit 103 can be configured by a MOS transistor.
  • An n-channel MOS transistor can be used for the charge transfer unit 103 and the MOS transistors 104 to 106.
  • the anode of the photoelectric conversion unit 101 is grounded, and the cathode is connected to the source of the charge transfer unit 103.
  • the drain of the charge transfer unit 103 is connected to the source of the MOS transistor 104, the gate of the MOS transistor 105, and one end of the charge holding unit 102. The other end of the charge holding portion 102 is grounded.
  • the drains of the MOS transistors 104 and 105 are commonly connected to the power supply line Vdd, and the source of the MOS transistors 105 is connected to the drain of the MOS transistor 106.
  • the source of the MOS transistor 106 is connected to the signal line 12.
  • the gates of the charge transfer units 103, 104 and 106 are connected to the transfer signal line TR, the reset signal line RST and the selection signal line SEL, respectively.
  • the transfer signal line TR, the reset signal line RST, and the selection signal line SEL constitute the signal line 11.
  • the photoelectric conversion unit 101 generates an electric charge according to the irradiated light as described above.
  • a photodiode can be used for the photoelectric conversion unit 101.
  • charge holding unit 102 and the MOS transistors 103 to 106 form a pixel circuit.
  • the charge transfer unit 103 is a transistor that transfers the charge generated by the photoelectric conversion of the photoelectric conversion unit 101 to the charge holding unit 102.
  • the charge transfer in the charge transfer unit 103 is controlled by the signal transmitted by the transfer signal line TR.
  • the charge holding unit 102 is a capacitor that holds the charge transferred by the charge transfer unit 103.
  • the MOS transistor 105 is a transistor that generates a signal based on the electric charge held by the electric charge holding unit 102.
  • the MOS transistor 106 is a transistor that outputs a signal generated by the MOS transistor 105 to the signal line 12 as an image signal.
  • the MOS transistor 106 is controlled by a signal transmitted by the selection signal line SEL. In this way, the MOS transistors 105 and 106 generate an image signal based on the electric charge held by the electric charge holding unit 102.
  • the circuit by the MOS transistors 105 and 106 constitutes the image signal generation unit 110.
  • the MOS transistor 104 is a transistor that resets the charge holding unit 102 by discharging the charge held by the charge holding unit 102 to the power supply line Vdd.
  • the reset by the MOS transistor 104 is controlled by the signal transmitted by the reset signal line RST, and is executed before the charge is transferred by the charge transfer unit 103.
  • the photoelectric conversion unit 101 can also be reset by conducting the charge transfer unit 103. In this way, the pixel circuit converts the electric charge generated by the photoelectric conversion unit 101 into an image signal.
  • FIG. 3 is a cross-sectional view showing a configuration example of a pixel according to the first embodiment of the present disclosure.
  • the figure is a schematic cross-sectional view showing a configuration example of the pixel 100.
  • the pixel 100 in the figure includes a semiconductor substrate 120, a wiring region 140, an insulating film 150, a color filter 160, a protective film 170, and an on-chip lens 180.
  • the semiconductor substrate 120 is a semiconductor substrate on which a photoelectric conversion unit 101, a diffusion region of a MOS transistor, and the like are formed.
  • a substrate made of silicon (Si) can be used for the semiconductor substrate 120.
  • the photoelectric conversion unit 101 and the like are arranged in the well region formed on the semiconductor substrate 120.
  • the semiconductor substrate 120 in the figure is assumed to be configured in a p-type well region. By forming an n-type semiconductor region in this p-type well region, a photoelectric conversion unit 101 or the like can be formed.
  • the white area of the semiconductor substrate 120 in the figure represents an n-type semiconductor area.
  • the photoelectric conversion unit 101 is composed of an n-type semiconductor region 121. Specifically, a photodiode formed by a pn junction at the interface between the n-type semiconductor region 121 and the surrounding p-type well region corresponds to the photoelectric conversion unit 101. The electric charge generated by the photoelectric conversion is accumulated in the n-type semiconductor region 121.
  • a p-type semiconductor region 122 having a relatively high impurity concentration is arranged between the n-type semiconductor region 121 and the surface of the semiconductor substrate 120 on the surface side.
  • the p-type semiconductor region 122 is a semiconductor region that pins the surface level of the semiconductor substrate 120 adjacent to the semiconductor region 121 on the surface side. By arranging the semiconductor region 122, the dark current caused by the surface level of the semiconductor substrate 120 can be reduced.
  • the semiconductor region 122 is an example of the second high impurity concentration region described in the claims.
  • the charge holding unit 102 is composed of an n-type semiconductor region 124.
  • the n-type semiconductor region 124 is a region that is configured to have a relatively high impurity concentration and retains the electric charge generated by photoelectric conversion and accumulated in the n-type semiconductor region 121.
  • the charge holding portion 102 formed by the semiconductor region 124 is referred to as floating diffusion.
  • the n-type semiconductor region 124 is connected to the image signal generation unit 110 by a wiring layer 143 described later.
  • the charge transfer unit 103 is arranged between the n-type semiconductor region 121 constituting the photoelectric conversion unit 101 and the n-type semiconductor region 124 constituting the charge holding unit 102, and is stored in the n-type semiconductor region 121. It is a MOS transistor that transfers an electric charge to the n-type semiconductor region 124.
  • the charge transfer unit 103 includes an embedded gate 132 embedded in an opening 129 formed in the semiconductor substrate 120.
  • the embedded gate 132 is arranged adjacent to the opening 129 of the semiconductor substrate 120 via the gate insulating film 131.
  • a channel is formed in the well region of the semiconductor substrate 120 along the opening 129.
  • a MOS transistor provided with such an embedded gate 132 is called a vertical transistor. It is possible to improve the charge transfer efficiency from the n-type semiconductor region 121 arranged in a relatively deep region of the semiconductor substrate 120.
  • a p-type semiconductor region 123 having a relatively high impurity concentration is arranged on the semiconductor substrate 120 adjacent to the opening 129.
  • the p-type semiconductor region 123 is a region for pinning the surface level of the semiconductor substrate 120 of the opening 129.
  • the semiconductor region 123 can be formed by injecting an acceptor such as boron (B) into the semiconductor substrate 120.
  • the semiconductor region 123 is an example of the high impurity concentration region described in the claims.
  • the substrate surface gate 133 can be arranged adjacent to the embedded gate 132.
  • the substrate surface gate 133 is a gate arranged on the surface side of the semiconductor substrate 120, and is a gate configured to cover the opening 129. Further, the substrate surface gate 133 in the figure is configured to cover the p-type semiconductor region 123.
  • a gate insulating film 131 is arranged between the substrate surface gate 133 and the surface side of the semiconductor substrate 120 in the same manner as the embedded gate 132. A channel is formed on the semiconductor substrate 120 directly below the substrate surface gate 133.
  • the opening 129 can be formed by etching the surface of the semiconductor substrate 120. As will be described later, the opening 129 is formed to be polygonal in a plan view.
  • the gate insulating film 131 can be made of SiO 2.
  • the SiO 2 can be formed by oxidizing Si on the surface of the opening 129.
  • the embedded gate 132 and the substrate surface gate 133 can be made of, for example, polycrystalline silicon or amorphous silicon. By arranging the polycrystalline silicon or the like in the opening 129, the embedded gate 132 can be formed. As described above, since the opening 129 is formed to be polygonal in a plan view, the outer shape of the embedded gate 132 arranged in the opening 129 is also formed to be polygonal in a plan view. Further, the embedded gate 132 and the substrate surface gate 133 can be formed at the same time.
  • the wiring area 140 is an area arranged on the surface side of the semiconductor substrate 120 and where wiring for transmitting signals to the elements of the semiconductor substrate 120 is arranged.
  • the wiring area 140 includes wiring layers 142 and 143 and an insulating layer 141.
  • the wiring layers 142 and 143 are wirings that transmit signals to the elements of the semiconductor substrate 120.
  • the wiring layer 142 and the like can be made of, for example, a metal such as copper (Cu) or tungsten (W).
  • the wiring layer 142 is wiring connected to the gate (board surface gate 133) of the charge transfer unit 103, and the wiring layer 143 is wiring connected to the semiconductor region 124 of the charge holding unit 102.
  • wiring layers constituting other wirings are also arranged in the wiring area 140.
  • the insulating layer 141 insulates the wiring layer 142 and the like.
  • the insulating layer 141 can be made of, for example, SiO 2 .
  • the semiconductor region of the semiconductor substrate 120 constituting the element, the gate of the charge transfer unit 103, the wiring layer 142, and the like can be connected by the contact plug 144.
  • the contact plug 144 is made of columnar metal.
  • the insulating film 150 is arranged on the back surface side of the semiconductor substrate 120 to protect the semiconductor substrate 120.
  • the insulating film 150 can be made of, for example, SiO 2 .
  • the color filter 160 is an optical filter that transmits light of a predetermined wavelength among the incident light.
  • this color filter 160 for example, three types of color filters that transmit red light, green light, and blue light can be used.
  • One of these three types of color filters 160 is arranged on the pixel 100.
  • the protective film 170 is a film that protects the back surface side of the pixel 100 on which the color filter 160 is arranged.
  • the protective film 170 can be made of the same material as the on-chip lens 180 described later.
  • the on-chip lens 180 is a lens that is arranged for each pixel 100 and collects incident light on a photoelectric conversion unit.
  • the on-chip lens 180 in the figure is formed in a hemispherical shape and collects incident light.
  • the on-chip lens 180 can be made of, for example, an inorganic material such as silicon nitride (SiN) or an organic material such as an acrylic resin.
  • the photoelectric conversion unit 101 of the pixel 100 receives the incident light from the back surface side of the semiconductor substrate 120.
  • the image pickup device 1 provided with such a pixel 100 is referred to as a back-illuminated image pickup device.
  • the substrate surface gate 133 can be arranged in the charge transfer unit 103.
  • the influence of the potential barrier formed between the photoelectric conversion unit 101 and the charge transfer unit 103 can be reduced.
  • the charge transfer unit 103 is brought into a non-conducting state to accumulate charges in the semiconductor region 121 of the photoelectric conversion unit 101.
  • a negative voltage is applied to the gate (embedded gate 132) of the charge transfer unit 103, and the charge transfer unit 103 has a higher potential than the semiconductor region 121.
  • a positive voltage is applied to the gate of the charge transfer unit 103.
  • the potential of the charge transfer unit 103 becomes lower than that of the semiconductor region 121, the charge in the semiconductor region 121 moves to the charge transfer unit 103, and the charge is transferred.
  • the p-type semiconductor region 123 for pinning is arranged in the charge transfer unit 103, and a relatively high potential barrier is formed.
  • this potential barrier remains between the charge transfer unit 103 and the photoelectric conversion unit 101, hindering the movement of charges. Therefore, the substrate surface gate 133 is arranged to cover the p-type semiconductor region 123.
  • a voltage is also applied to the semiconductor region 123 directly below the substrate surface gate 133, and the potential barrier can be lowered. The movement of electric charge is not hindered, and the electric charge transfer efficiency can be improved.
  • the substrate surface gate 133 is configured to cover the p-type semiconductor region 123, the electric field strength on the surface of the semiconductor substrate 120 near the gate of the charge transfer unit 103 can be lowered.
  • the charge transfer unit 103 and the charge holding unit 102 come closer to each other.
  • the p-type semiconductor region 123 is configured to have a relatively high impurity concentration, the electric field suddenly changes at the interface between the semiconductor region 123 and the semiconductor region 124 of the charge holding portion 102, causing a tunnel effect and causing leakage current. To increase. Therefore, by arranging the substrate surface gate 133 near the boundary of the semiconductor region 123 and applying a voltage, it is possible to alleviate a sudden change in the electric field near the surface of the semiconductor substrate 120. Leakage current can be reduced.
  • FIG. 4 is a plan view showing a configuration example of pixels according to the first embodiment of the present disclosure.
  • FIG. 6 is a plan view showing a configuration example of the pixel 100, and is a plan view seen from the surface side of the semiconductor substrate 120. Note that FIG. 3 corresponds to a cross-sectional view taken along the line AA'in the figure.
  • the semiconductor region 121 of the photoelectric conversion unit 101 is arranged in the upper right, and the semiconductor region 124 of the charge holding unit 102 is arranged in the lower left.
  • the charge transfer unit 103 is arranged between the photoelectric conversion unit 101 and the charge holding unit 102.
  • the solid polygon of the charge transfer unit 103 represents the substrate surface gate 133.
  • the polygonal alternate long and short dash line represents the opening 129.
  • the dotted polygon represents the embedded gate 132.
  • the opening 129 and the embedded gate 132 in the figure represent an example of being formed in an octagonal shape in a plan view.
  • the plan view represents a case of being viewed from a direction perpendicular to the surface of the semiconductor substrate 120.
  • the opening 129 and the like are formed in a polygonal shape on a surface parallel to the surface of the semiconductor substrate 120.
  • the MOS transistors 104 to 106 described in FIG. 2 are arranged at the lower right of the figure.
  • the MOS transistor 104 is composed of semiconductor regions 125 and 126 and a gate 134.
  • the semiconductor regions 125 and 126 correspond to the source region and the drain region, respectively.
  • the MOS transistor 105 is composed of semiconductor regions 126 and 127 and a gate 135.
  • the semiconductor regions 126 and 127 correspond to the drain region and the source region, respectively.
  • the MOS transistor 106 is composed of semiconductor regions 127 and 128 and a gate 136.
  • the semiconductor regions 127 and 128 correspond to the drain region and the source region, respectively.
  • the gates 134 to 136 are gates composed of electrodes arranged on the surface side of the semiconductor substrate 120, similarly to the substrate surface gate 133.
  • the semiconductor region 125 that constitutes the source region of the MOS transistor 104 and the gate 135 of the MOS transistor 105 are connected to the semiconductor region 124 that constitutes the charge holding portion 102.
  • the wiring 109 in the figure represents the wiring connecting them, and is the wiring composed of the wiring layer 143 described in FIG.
  • the black circles in the figure represent the connection portion between the wiring 109 and the semiconductor region 124 and the like.
  • a contact plug is arranged at this connection portion.
  • the MOS transistors 105 and 106 form the image signal generation unit 110.
  • the charge holding unit 102 and the MOS transistors 104 to 106 can be shared by a plurality of pixels 100. As shown in the figure, the charge transfer unit 103 and the photoelectric conversion unit 101 are arranged on one of the long sides of the octagonal semiconductor region 124. By arranging the charge transfer unit 103 and the photoelectric conversion unit 101 on each of the other three long sides of the semiconductor region 124, the charge holding unit 102, the MOS transistor 104, and the image signal generation unit 110 are shared by the four pixels 100. Can be configured to
  • the opening 129 formed into a polygon in such a plan view can be formed by recrystallizing the Si of the inner wall of the opening formed in the semiconductor substrate 120. Specifically, a circular opening is formed on the surface side of the semiconductor substrate 120 and heated to several hundred degrees. This heating causes migration of Si in the semiconductor substrate 120. The migrated Si precipitates on the side surface of the opening and recrystallizes. At the time of this recrystallization, by growing the planes (100 planes or 110 planes) having a specific orientation, it is possible to form an opening 129 having a polygonal cross section surrounded by the planes.
  • the semiconductor substrate can be heated immediately before the step of forming the gate insulating film 131 in the opening 129.
  • the gate insulating film 131 can be formed by oxidizing the surface of the semiconductor substrate 120 including the opening 129. Since the semiconductor substrate 120 is heated in this oxidation step, the manufacturing step of the image sensor 1 can be simplified by continuously performing the step of forming the inner wall of the opening 129 into a polygon and the step of oxidation. can. Radical oxidation and plasma oxidation can be applied as the oxidation method of the semiconductor substrate 120. These are oxidation methods for oxidizing the semiconductor substrate 120 with oxygen radicals.
  • FIG. 5 is a plan view showing a configuration example of the embedded gate according to the first embodiment of the present disclosure.
  • FIG. 4 is an enlarged view of a portion of the embedded gate 132 of the charge transfer unit 103 described with reference to FIG.
  • the hatched region represents the gate oxide film 131.
  • the description of the substrate surface gate 133 is omitted.
  • the opening 129 can be formed in an octagonal shape in a plan view.
  • the shape of the gate insulating film 131 formed along the inner wall of the opening 129 is also octagonal, and the outer shape of the embedded gate 132 is also octagonal.
  • the electric charge of the semiconductor region 121 of the photoelectric conversion unit 101 When the electric charge of the semiconductor region 121 of the photoelectric conversion unit 101 is transferred to the semiconductor region 124 of the charge holding unit 102, the electric charge moves along the channel formed outside the opening 129. Since this channel is formed along the octagonal outer shape of the opening 129, the charge from the semiconductor region 121 moves along the octagonal outer shape of the opening 129.
  • the broken line in the figure assumes a circle circumscribing the octagonal opening 129, and represents the opening 129 when formed in a circular shape in a plan view.
  • the curved arrows in the figure represent an example of the charge movement path.
  • the octagonal opening 129 and the charge transfer unit 103 provided with the embedded gate 132 embedded in the opening are circular.
  • the charge transfer path can be shortened as compared with the case where the gate embedded in the opening is provided. As a result, the time required for charge transfer can be shortened.
  • the shape of the opening 129 octagonal the charge transfer path is expanded. This is because the above-mentioned channel is expanded from the circumference shown in the figure to the position of the side of the octagon. As a result, the charge transfer efficiency of the charge transfer unit 103 can be improved.
  • the opening 129 into an octagon in a plan view, the area of the inner surface of the opening 129 can be reduced as compared with the case where the opening 129 is formed in a circular shape. As a result, defects in the semiconductor substrate 120 formed in the opening 129 can be reduced. The surface level of the opening 129 can be reduced, and the generation of dark current can be reduced.
  • Such an effect can be obtained by forming the opening 129 into a polygon of hexagon or more in a plan view.
  • the electric field is concentrated on the gate insulating film 131 at the apex of the opening 129, which may cause problems such as breakage. This is because the angle of the apex of the opening 129 is small.
  • the angle of the apex of the opening 129 can be configured to be 120 to 150 degrees. Thereby, the concentration of the electric field of the gate insulating film 131 at the apex portion of the opening 129 can be relaxed.
  • the distance between the photoelectric conversion unit 101 and the semiconductor region 121 can be widened.
  • “D” shown in the figure represents an increase in the distance between the opening 129 and the semiconductor region 121 as compared with the circular opening 129.
  • the substrate surface gate 133 is arranged so as to cover the semiconductor region 123. The substrate surface gate 133 can reduce the influence of the potential barrier at the interface with the photoelectric conversion unit 101. By making the distance between the boundary of the semiconductor region 123 and the semiconductor region 121 relatively wide, the influence of the potential barrier can be further reduced.
  • the distance between the boundary of the semiconductor region 123 and the semiconductor region 124 can be made relatively wide, and the effect of mitigating the suddenly changing electric field described above can be improved. .. Twice
  • the distance between the boundary of the semiconductor region 123 and the semiconductor region 121 can be maximized. can.
  • This can be done by forming an azimuth plane in the direction parallel to the boundary of the semiconductor region 121.
  • the directional plane 129a in the figure represents an directional plane in a direction parallel to the boundary of the semiconductor region 121.
  • the directional plane 129a for example, by growing 100 planes of Si, the position of the side of the opening 129 can be made parallel to the boundary of the semiconductor region 121.
  • Such an orientation surface 129a can be formed, for example, by adjusting the orientation of the wafer-shaped semiconductor substrate 120 on the surface side and the orientation of the orientation flat surface. For example, by using a wafer having 100 faces on the front surface side and setting the faces of the orientation flat to 100 faces, 100 faces can be formed on the faces of the openings perpendicular to or parallel to the orientation flat. Then, by arranging the boundary of the semiconductor region 121 in a direction perpendicular to or parallel to the orientation flat, 100 planes, which are directional planes parallel to the boundary with the semiconductor region 121, are placed in the opening 129 close to the semiconductor region 121. Can be formed. In this case, 110 directional planes are formed on the plane adjacent to the directional plane 129a formed on the 100 planes of the opening 129. The "A" shown in the figure represents the angle formed by these surfaces. A can be 120 to 150 degrees.
  • the position of the side of the polygonal opening 129 can be made parallel to the interface of the charge holding portion 102 with the semiconductor region 124.
  • the distance between the boundary of the semiconductor region 123 and the semiconductor region 124 can be widened, and the effect of mitigating the above-mentioned change in the electric field can be improved.
  • FIG. 6 are diagrams showing an example of a pixel manufacturing method according to the first embodiment of the present disclosure.
  • a p-type well region is formed on the semiconductor substrate 120.
  • an n-type semiconductor region 121 is formed in this well region (A in FIG. 6).
  • the silicon-based insulating film 401 is formed on the surface side of the semiconductor substrate 120.
  • the silicon-based insulating film 401 is an insulating film formed by laminating SiN and SiO 2 , and is a film that serves as a mask when the opening 129 is formed in the semiconductor substrate 120.
  • the silicon-based insulating film 401 can be formed by CVD (Chemical Vapor Deposition) (B in FIG. 6).
  • the opening 402 is formed in the silicon-based insulating film 401 in the region where the opening 129 is formed. This can be formed by arranging a resist having an opening at the position of the opening 402 on the surface of the silicon-based insulating film 401 and performing etching (C in FIG. 6).
  • the opening 129 is formed. This can be done by etching the surface side of the semiconductor substrate 120 using the silicon-based insulating film 401 as a mask. Dry etching can be applied to this etching.
  • the formed opening 129 is, for example, formed in a circular shape (D in FIG. 7).
  • the sacrificial oxide film 403 is formed on the surface of the silicon-based insulating film 401 and the inner wall of the opening 129.
  • the formation of the sacrificial oxide film 403 can be performed as follows. First, the semiconductor substrate 120 is heated while supplying oxygen (O 2 ) gas and hydrogen (H 2) gas. Oxygen radicals are generated by raising the temperature of the semiconductor substrate 120 to several hundred degrees while the gas is supplied. The surface of the semiconductor substrate 120 is oxidized by the oxygen radicals to form a sacrificial oxide film 403 (E in FIG. 7).
  • the semiconductor region 123 is formed. This can be done by implanting boron (B) ions using the silicon-based insulating film 401 as a mask (F in FIG. 8).
  • the sacrificial oxide film 403 and the silicon-based insulating film 401 are removed using a chemical solution such as hydrofluoric acid (G in FIG. 8).
  • Si on the inner wall of the opening 129 is recrystallized. This can be done by heating the semiconductor substrate 120. By heating and holding the semiconductor substrate 120 to several hundred degrees, migration of Si constituting the semiconductor substrate 120 occurs, and Si is recrystallized in the inner wall of the opening 129. As a result, the polygonal opening 129 can be formed in a plan view. Further, the recrystallization of Si narrows the opening 129 (H in FIG. 8). At the time of recrystallization of this Si, it is preferable to supply O 2 gas mixed with O 2 gas or H 2 gas. This is because it can be used in combination with the next radical oxidation step.
  • the Si on the surface of the semiconductor substrate 120 is oxidized to form the gate insulating film 131.
  • radical oxidation can be applied to the oxidation of Si.
  • the gate insulating film 131 can be formed by heating the semiconductor substrate 120 to several hundred degrees while supplying O 2 gas mixed with O 2 gas and H 2 gas. Yes (I in FIG. 8).
  • the polycrystalline silicon film 404 is arranged on the surface side of the semiconductor substrate 120. At this time, the polycrystalline silicon film 404 is also arranged in the opening 129. This can be done by CVD (J in FIG. 9).
  • the polycrystalline silicon film 404 other than the region of the substrate surface gate 133 on the surface side of the semiconductor substrate 120 is removed. This can be done by etching the polycrystalline silicon film 404. As a result, the substrate surface gate 133 and the embedded gate 132 can be formed (K in FIG. 9).
  • the semiconductor regions 122 and 124 are formed on the semiconductor substrate 120. This can be done by ion implantation (L in FIG. 9).
  • the wiring region 140 is formed on the surface side of the semiconductor substrate 120.
  • the back surface side of the semiconductor substrate 120 is ground to thin the semiconductor substrate 120.
  • the insulating film 150, the color filter 160, the protective film 170, and the on-chip lens 180 are formed in this order on the back surface side of the semiconductor substrate 120. Thereby, the image pickup device 1 can be manufactured.
  • the sacrificial oxide film 403 and the gate insulating film 131 can also be formed by plasma oxidation in which oxygen radicals are generated by oxygen plasma to oxidize Si. Further, the recrystallization of Si in the inner wall of the opening 129 can also be performed at the time of forming the sacrificial oxide film 403.
  • the gate insulating film 131 and the embedded gate 132 are arranged in the regular octagonal opening 129 in a plan view, but an opening 129 having another shape can also be applied.
  • FIG. 10 is a plan view showing another configuration example of the pixel according to the first embodiment of the present disclosure.
  • FIG. 5 is a diagram showing the shape of the opening 129 and the like of the charge transfer unit 103 as in FIG.
  • the opening 129 in the figure is different from the opening 129 in FIG. 5 in that it is formed in a flat octagonal shape.
  • the flat polygonal opening 129 shown in the figure can be formed.
  • the embedded gate 132 By arranging the embedded gate 132 in the opening 129, the embedded gate 132 having a flat octagonal shape can be formed. Even in the embedded gate 132 having a flat octagonal shape, the charge transfer path can be shortened.
  • the charge transfer is performed by forming the embedded gate 132 of the charge transfer unit 103 composed of the vertical transistor into a polygon in a plan view.
  • the charge transfer path of the unit 103 can be shortened. Thereby, the charge transfer efficiency in the charge transfer unit 103 can be improved.
  • the substrate surface gate 133 is arranged in the charge transfer unit 103 of the pixel 100.
  • the image sensor 1 of the second embodiment of the present disclosure is different from the above-described first embodiment in that the substrate surface gate 133 is omitted.
  • FIG. 11 is a cross-sectional view showing a configuration example of a pixel according to the second embodiment of the present disclosure. Similar to FIG. 3, FIG. 3 is a schematic cross-sectional view showing a configuration example of the pixel 100. It differs from the pixel 100 described in FIG. 3 in that the substrate surface gate 133 of the charge transfer unit 103 is omitted.
  • the charge transfer unit 103 in the figure controls the transfer of electric charge from the photoelectric conversion unit 101 to the charge holding unit 102 by the embedded gate 132. Also in the figure, the opening 129 and the embedded gate 132 are formed in a polygonal shape in a plan view.
  • the image sensor 1 of the second embodiment of the present disclosure can shorten the charge transfer path even when the charge transfer unit 103 substrate surface gate 133 is omitted.
  • the photoelectric conversion unit 101 of the pixel 100 is arranged near the surface side of the semiconductor substrate 120.
  • the image sensor 1 of the third embodiment of the present disclosure is different from the above-described first embodiment in that the photoelectric conversion unit 101 is arranged in the deep part of the semiconductor substrate 120.
  • FIG. 12 is a cross-sectional view showing a configuration example of a pixel according to a third embodiment of the present disclosure. Similar to FIG. 3, FIG. 3 is a schematic cross-sectional view showing a configuration example of the pixel 100. It differs from the pixel 100 described in FIG. 3 in that the semiconductor region 121 of the photoelectric conversion unit 101 is arranged on the back surface side of the semiconductor substrate 120.
  • the semiconductor region 121 of the photoelectric conversion unit 101 in the figure is not arranged on the surface side of the semiconductor substrate 120. Therefore, the semiconductor region 124 of the charge holding unit 102 arranged on the surface side of the semiconductor substrate 120 can be arranged at a position overlapping with the semiconductor region 121 of the photoelectric conversion unit 101. As a result, the pixel 100 can be miniaturized. Twice
  • the charge transfer unit 103 in the figure transfers the electric charge generated by the photoelectric conversion unit 101 in the thickness direction of the semiconductor substrate 120.
  • the opening 129 and the embedded gate 132 of the charge transfer unit 103 are formed in a polygonal shape in a plan view, similarly to the charge transfer unit 103 of FIG. As a result, the area of the inner surface of the opening 129 can be reduced, and the surface level of the semiconductor substrate 120 in the opening 129 can be reduced. It is possible to reduce the generation of dark current.
  • the electric charge generated by the photoelectric conversion unit 101 arranged on the back surface side of the semiconductor substrate 120 is charged by the charge transfer unit 103 to the semiconductor substrate 120. Is transferred in the thickness direction of. Even in such a case, by forming the opening 129 and the embedded gate 132 of the charge transfer unit 103 into a polygonal shape, the surface level formed in the opening 129 can be reduced, and the darkness can be reduced. The generation of electric current can be reduced.
  • opening 129 and the embedded gate 132 in FIG. 10 can be applied to other embodiments. Specifically, the opening 129 and the embedded gate 132 of FIG. 10 can be applied to the charge transfer unit 103 of FIG. 11 and 12.
  • the technology according to the present disclosure can be applied to various products.
  • the present technology may be realized as an image pickup device mounted on an image pickup device such as a camera.
  • FIG. 13 is a block diagram showing a schematic configuration example of a camera which is an example of an imaging device to which the present technology can be applied.
  • the camera 1000 in the figure includes a lens 1001, an image pickup element 1002, an image pickup control unit 1003, a lens drive unit 1004, an image processing unit 1005, an operation input unit 1006, a frame memory 1007, a display unit 1008, and the like.
  • a recording unit 1009 is provided.
  • the lens 1001 is a photographing lens of the camera 1000.
  • the lens 1001 collects light from the subject and causes the light to be incident on the image pickup device 1002 described later to form an image of the subject.
  • the image sensor 1002 is a semiconductor element that captures light from a subject focused by the lens 1001.
  • the image sensor 1002 generates an analog image signal according to the irradiated light, converts it into a digital image signal, and outputs the signal.
  • the image pickup control unit 1003 controls the image pickup in the image pickup device 1002.
  • the image pickup control unit 1003 controls the image pickup device 1002 by generating a control signal and outputting the control signal to the image pickup device 1002. Further, the image pickup control unit 1003 can perform autofocus on the camera 1000 based on the image signal output from the image pickup device 1002.
  • the autofocus is a system that detects the focal position of the lens 1001 and automatically adjusts it.
  • a method (image plane phase difference autofocus) in which the image plane phase difference is detected by the phase difference pixels arranged in the image sensor 1002 to detect the focal position can be used. It is also possible to apply a method (contrast autofocus) of detecting the position where the contrast of the image is highest as the focal position.
  • the image pickup control unit 1003 adjusts the position of the lens 1001 via the lens drive unit 1004 based on the detected focal position, and performs autofocus.
  • the image pickup control unit 1003 can be configured by, for example, a DSP (Digital Signal Processor) equipped with firmware. Twice
  • the lens driving unit 1004 drives the lens 1001 based on the control of the imaging control unit 1003.
  • the lens driving unit 1004 can drive the lens 1001 by changing the position of the lens 1001 using a built-in motor.
  • the image processing unit 1005 processes the image signal generated by the image sensor 1002. This processing includes, for example, demosaic to generate an image signal of a color that is insufficient among the image signals corresponding to red, green, and blue for each pixel, noise reduction to remove noise of the image signal, and coding of the image signal. Applicable.
  • the image processing unit 1005 can be configured by, for example, a microcomputer equipped with firmware.
  • the operation input unit 1006 receives the operation input from the user of the camera 1000.
  • a push button or a touch panel can be used for the operation input unit 1006.
  • the operation input received by the operation input unit 1006 is transmitted to the image pickup control unit 1003 and the image processing unit 1005. After that, processing according to the operation input, for example, processing such as imaging of the subject is activated.
  • the frame memory 1007 is a memory that stores a frame that is an image signal for one screen.
  • the frame memory 1007 is controlled by the image processing unit 1005 and holds frames in the process of image processing.
  • the display unit 1008 displays the image processed by the image processing unit 1005.
  • a liquid crystal panel can be used.
  • the recording unit 1009 records the image processed by the image processing unit 1005.
  • a memory card or a hard disk can be used for the recording unit 1009.
  • the cameras to which this disclosure can be applied have been described above.
  • the present technology can be applied to the image pickup device 1002 among the configurations described above.
  • the image pickup device 1 described with reference to FIG. 1 can be applied to the image pickup device 1002.
  • the image processing unit 1005 is an example of the processing circuit described in the claims.
  • the camera 1000 is an example of the imaging device according to the claims.
  • FIG. 14 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technique according to the present disclosure can be applied.
  • FIG. 14 shows a surgeon (doctor) 11131 performing surgery on patient 11132 on patient bed 11133 using the endoscopic surgery system 11000.
  • the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as an abdominal tube 11111 and an energy treatment tool 11112, and a support arm device 11120 that supports the endoscope 11100.
  • a cart 11200 equipped with various devices for endoscopic surgery.
  • the endoscope 11100 is composed of a lens barrel 11101 in which a region having a predetermined length from the tip is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101.
  • the endoscope 11100 configured as a so-called rigid mirror having a rigid barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible barrel. good.
  • An opening in which an objective lens is fitted is provided at the tip of the lens barrel 11101.
  • a light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is an objective. It is irradiated toward the observation target in the body cavity of the patient 11132 through the lens.
  • the endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.
  • An optical system and an image pickup element are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the image pickup element by the optical system.
  • the observation light is photoelectrically converted by the image sensor, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated.
  • the image signal is transmitted as RAW data to the camera control unit (CCU: Camera Control Unit) 11201.
  • CCU Camera Control Unit
  • the CCU11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal for displaying an image based on the image signal, such as development processing (demosaic processing).
  • a CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the display device 11202 displays an image based on the image signal processed by the CCU 11201 under the control of the CCU 11201.
  • the light source device 11203 is composed of, for example, a light source such as an LED (Light Emitting Diode), and supplies irradiation light to the endoscope 11100 when photographing an operating part or the like.
  • a light source such as an LED (Light Emitting Diode)
  • LED Light Emitting Diode
  • the input device 11204 is an input interface for the endoscopic surgery system 11000.
  • the user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204.
  • the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.
  • the treatment tool control device 11205 controls the drive of the energy treatment tool 11112 for cauterizing, incising, sealing a blood vessel, or the like of a tissue.
  • the pneumoperitoneum device 11206 uses a gas in the pneumoperitoneum tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing the field of view by the endoscope 11100 and securing the work space of the operator.
  • the recorder 11207 is a device capable of recording various information related to surgery.
  • the printer 11208 is a device capable of printing various information related to surgery in various formats such as texts, images, and graphs.
  • the light source device 11203 that supplies the irradiation light to the endoscope 11100 when photographing the surgical site can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof.
  • a white light source is configured by combining RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out.
  • the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-divided manner, and the drive of the image sensor of the camera head 11102 is controlled in synchronization with the irradiation timing to support each of RGB. It is also possible to capture the image in a time-divided manner. According to this method, a color image can be obtained without providing a color filter on the image sensor.
  • the drive of the light source device 11203 may be controlled so as to change the intensity of the output light at predetermined time intervals.
  • the drive of the image sensor of the camera head 11102 in synchronization with the timing of changing the light intensity to acquire an image in a time-divided manner and synthesizing the image, so-called high dynamic without blackout and overexposure. Range images can be generated.
  • the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependence of light absorption in body tissue to irradiate light in a narrow band as compared with the irradiation light (that is, white light) in normal observation, the surface layer of the mucous membrane. So-called narrow band imaging, in which a predetermined tissue such as a blood vessel is photographed with high contrast, is performed.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating with excitation light.
  • the body tissue is irradiated with excitation light to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. It is possible to obtain a fluorescence image by irradiating excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 11203 may be configured to be capable of supplying narrow band light and / or excitation light corresponding to such special light observation.
  • FIG. 15 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU11201 shown in FIG.
  • the camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • CCU11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413.
  • the camera head 11102 and CCU11201 are communicably connected to each other by a transmission cable 11400.
  • the lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101.
  • the observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and incident on the lens unit 11401.
  • the lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the image pickup unit 11402 is composed of an image pickup element.
  • the image sensor constituting the image pickup unit 11402 may be one (so-called single plate type) or a plurality (so-called multi-plate type).
  • each image pickup element may generate an image signal corresponding to each of RGB, and a color image may be obtained by synthesizing them.
  • the image pickup unit 11402 may be configured to have a pair of image pickup elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display, respectively.
  • the 3D display enables the operator 11131 to more accurately grasp the depth of the biological tissue in the surgical site.
  • a plurality of lens units 11401 may be provided corresponding to each image pickup element.
  • the imaging unit 11402 does not necessarily have to be provided on the camera head 11102.
  • the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
  • the drive unit 11403 is composed of an actuator, and the zoom lens and focus lens of the lens unit 11401 are moved by a predetermined distance along the optical axis under the control of the camera head control unit 11405. As a result, the magnification and focus of the image captured by the imaging unit 11402 can be adjusted as appropriate.
  • the communication unit 11404 is composed of a communication device for transmitting and receiving various information to and from the CCU11201.
  • the communication unit 11404 transmits the image signal obtained from the image pickup unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
  • the communication unit 11404 receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405.
  • the control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image, and the like. Contains information about the condition.
  • the imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of CCU11201 based on the acquired image signal. good.
  • the so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are mounted on the endoscope 11100.
  • the camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is composed of a communication device for transmitting and receiving various information to and from the camera head 11102.
  • the communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
  • the communication unit 11411 transmits a control signal for controlling the drive of the camera head 11102 to the camera head 11102.
  • Image signals and control signals can be transmitted by telecommunications, optical communication, or the like.
  • the image processing unit 11412 performs various image processing on the image signal which is the RAW data transmitted from the camera head 11102.
  • the control unit 11413 performs various controls related to the imaging of the surgical site and the like by the endoscope 11100 and the display of the captured image obtained by the imaging of the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the drive of the camera head 11102.
  • control unit 11413 causes the display device 11202 to display an image captured by the surgical unit or the like based on the image signal processed by the image processing unit 11412.
  • the control unit 11413 may recognize various objects in the captured image by using various image recognition techniques. For example, the control unit 11413 detects the shape, color, and the like of the edge of an object included in the captured image to remove surgical tools such as forceps, a specific biological part, bleeding, and mist when using the energy treatment tool 11112. Can be recognized.
  • the control unit 11413 may superimpose and display various surgical support information on the image of the surgical unit by using the recognition result. By superimposing and displaying the surgical support information and presenting it to the surgeon 11131, it is possible to reduce the burden on the surgeon 11131 and to allow the surgeon 11131 to proceed with the surgery reliably.
  • the transmission cable 11400 that connects the camera head 11102 and CCU11201 is an electric signal cable that supports electric signal communication, an optical fiber that supports optical communication, or a composite cable thereof.
  • the communication is performed by wire using the transmission cable 11400, but the communication between the camera head 11102 and the CCU11201 may be performed wirelessly.
  • the above is an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to the imaging unit 11402 of the camera head 11102 in the configuration described above.
  • the image sensor 1 of FIG. 1 can be applied to the image pickup unit 10402.
  • the technique according to the present disclosure to the imaging unit 10402, high-speed imaging becomes possible.
  • the technique according to the present disclosure may be applied to other, for example, a microscopic surgery system.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure is realized as a device mounted on a moving body of any kind such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot. You may.
  • FIG. 16 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technique according to the present disclosure can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via the communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (interface) 12053 are shown as a functional configuration of the integrated control unit 12050.
  • the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 provides a driving force generator for generating the driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating a braking force of a vehicle.
  • the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a head lamp, a back lamp, a brake lamp, a winker, or a fog lamp.
  • the body system control unit 12020 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches.
  • the body system control unit 12020 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.
  • the vehicle exterior information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000.
  • the imaging unit 12031 is connected to the vehicle exterior information detection unit 12030.
  • the vehicle outside information detection unit 12030 causes the image pickup unit 12031 to capture an image of the outside of the vehicle and receives the captured image.
  • the vehicle exterior information detection unit 12030 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received image.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received.
  • the image pickup unit 12031 can output an electric signal as an image or can output it as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.
  • the in-vehicle information detection unit 12040 detects the in-vehicle information.
  • a driver state detection unit 12041 that detects the driver's state is connected to the in-vehicle information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether the driver is dozing.
  • the microcomputer 12051 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside information detection unit 12030 or the inside information detection unit 12040, and the drive system control unit.
  • a control command can be output to 12010.
  • the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. It is possible to perform cooperative control for the purpose of.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, so that the driver can control the vehicle. It is possible to perform coordinated control for the purpose of automatic driving, etc., which runs autonomously without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the vehicle exterior information detection unit 12030.
  • the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the external information detection unit 12030, and performs coordinated control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
  • the audio image output unit 12052 transmits the output signal of at least one of the audio and the image to the output device capable of visually or audibly notifying the passenger or the outside of the vehicle of the information.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices.
  • the display unit 12062 may include, for example, at least one of an onboard display and a heads-up display.
  • FIG. 17 is a diagram showing an example of the installation position of the imaging unit 12031.
  • the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as imaging units 12031. Twice
  • the imaging units 12101, 12102, 12103, 12104, 12105 are provided at positions such as, for example, the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 12100.
  • the image pickup unit 12101 provided on the front nose and the image pickup section 12105 provided on the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the imaging units 12102 and 12103 provided in the side mirrors mainly acquire images of the side of the vehicle 12100.
  • the imaging unit 12104 provided on the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100.
  • the images in front acquired by the imaging units 12101 and 12105 are mainly used for detecting a preceding vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 17 shows an example of the photographing range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively
  • the imaging range 12114 indicates the imaging range of the imaging units 12102 and 12103.
  • the imaging range of the imaging unit 12104 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 as viewed from above can be obtained.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the image pickup units 12101 to 12104 may be a stereo camera composed of a plurality of image pickup elements, or an image pickup element having pixels for phase difference detection.
  • the microcomputer 12051 has a distance to each three-dimensional object within the imaging range 12111 to 12114 based on the distance information obtained from the imaging units 12101 to 12104, and a temporal change of this distance (relative velocity with respect to the vehicle 12100). By obtaining can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in front of the preceding vehicle in advance, and can perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform coordinated control for the purpose of automatic driving or the like in which the vehicle travels autonomously without depending on the operation of the driver.
  • automatic braking control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • the microcomputer 12051 converts three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, electric poles, and other three-dimensional objects based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that can be seen by the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 is used via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging units 12101 to 12104.
  • pedestrian recognition includes, for example, a procedure for extracting feature points in an image captured by an imaging unit 12101 to 12104 as an infrared camera, and a pattern matching process for a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian. It is done by the procedure to determine.
  • the audio image output unit 12052 When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 outputs a square contour line for emphasizing the recognized pedestrian.
  • the display unit 12062 is controlled so as to superimpose and display. Further, the audio image output unit 12052 may control the display unit 12062 so as to display an icon or the like indicating a pedestrian at a desired position.
  • the above is an example of a vehicle control system to which the technology according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to the imaging unit 12031 and the like among the configurations described above.
  • the image sensor 1 described with reference to FIG. 1 can be applied to an image pickup unit 12031 or the like.
  • the present technology can have the following configurations.
  • a photoelectric conversion unit that is arranged on a semiconductor substrate and generates an electric charge according to incident light by photoelectric conversion.
  • a charge holding unit that holds the charge and
  • a charge transfer unit formed on the semiconductor substrate and provided with a polygonal opening and an embedded gate arranged in the opening in a plan view to transfer the charge from the photoelectric conversion unit to the charge holding unit.
  • An image pickup device including an image signal generation unit that generates an image signal based on the retained electric charge.
  • the charge transfer unit includes the polygonal opening having an internal angle of a vertex of 120 to 150 degrees.
  • the charge transfer unit further includes a gate insulating film arranged between the semiconductor substrate and the embedded gate.
  • the charge transfer unit includes the gate insulating film formed by oxidizing the semiconductor substrate.
  • the charge transfer unit includes the gate insulating film formed by oxidizing the semiconductor substrate with oxygen radicals.
  • the semiconductor substrate is made of silicon.
  • the charge transfer unit further includes a high impurity concentration region arranged on the semiconductor substrate adjacent to the opening and having a high impurity concentration. Image sensor.
  • the image pickup device wherein the charge transfer unit further includes a substrate surface gate that is adjacent to the embedded gate and is configured to cover the high impurity concentration region on the surface side of the semiconductor substrate. .. (14) Any of the above (1) to (13), which is adjacent to the photoelectric conversion unit and further includes a second high impurity concentration region arranged on the surface side of the semiconductor substrate and having a high impurity concentration.
  • the image pickup device (15) A photoelectric conversion unit that is arranged on a semiconductor substrate and generates an electric charge according to incident light by photoelectric conversion.
  • a charge holding unit that holds the charge and A charge transfer unit formed on the semiconductor substrate and provided with a polygonal opening and an embedded gate arranged in the opening in a plan view to transfer the charge from the photoelectric conversion unit to the charge holding unit.
  • An image signal generation unit that generates an image signal based on the retained electric charge,
  • An image pickup apparatus including a processing circuit for processing the generated image signal.
  • Image sensor 1002 Image sensor 10 Pixel array unit 30
  • Column signal processing unit 100 pixels 101
  • Photoelectric conversion unit 102
  • Charge holding unit 103
  • Image signal generator 120
  • Semiconductor substrate 129 Opening 131
  • Gate insulating film 132
  • Embedded Gate 133
  • Substrate surface gate 403
  • Sacrificial oxide film 1000
  • Camera 1005 Image processing unit 10402, 12031, 12101-12105 Image sensor

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
PCT/JP2021/003680 2020-03-18 2021-02-02 撮像素子および撮像装置 Ceased WO2021186921A1 (ja)

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US20230154948A1 (en) 2023-05-18

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