JPWO2021186921A1 - - Google Patents

Info

Publication number
JPWO2021186921A1
JPWO2021186921A1 JP2022508113A JP2022508113A JPWO2021186921A1 JP WO2021186921 A1 JPWO2021186921 A1 JP WO2021186921A1 JP 2022508113 A JP2022508113 A JP 2022508113A JP 2022508113 A JP2022508113 A JP 2022508113A JP WO2021186921 A1 JPWO2021186921 A1 JP WO2021186921A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2022508113A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021186921A1 publication Critical patent/JPWO2021186921A1/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
JP2022508113A 2020-03-18 2021-02-02 Ceased JPWO2021186921A1 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020047920 2020-03-18
PCT/JP2021/003680 WO2021186921A1 (ja) 2020-03-18 2021-02-02 撮像素子および撮像装置

Publications (1)

Publication Number Publication Date
JPWO2021186921A1 true JPWO2021186921A1 (cg-RX-API-DMAC7.html) 2021-09-23

Family

ID=77768267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022508113A Ceased JPWO2021186921A1 (cg-RX-API-DMAC7.html) 2020-03-18 2021-02-02

Country Status (5)

Country Link
US (1) US20230154948A1 (cg-RX-API-DMAC7.html)
JP (1) JPWO2021186921A1 (cg-RX-API-DMAC7.html)
CN (1) CN115244919B (cg-RX-API-DMAC7.html)
DE (1) DE112021001701T5 (cg-RX-API-DMAC7.html)
WO (1) WO2021186921A1 (cg-RX-API-DMAC7.html)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287743A (ja) * 2009-06-11 2010-12-24 Sony Corp 半導体装置及びその製造方法、固体撮像素子
JP2012199489A (ja) * 2011-03-23 2012-10-18 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP2019165136A (ja) * 2018-03-20 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102556A (ja) * 1999-09-27 2001-04-13 Fuji Film Microdevices Co Ltd 固体撮像装置
JP4497688B2 (ja) * 1999-09-27 2010-07-07 富士フイルム株式会社 固体撮像装置
JP2007036352A (ja) * 2005-07-22 2007-02-08 Fujifilm Holdings Corp 撮像装置、並びに信号処理方法およびプログラム
EP2133918B1 (en) * 2008-06-09 2015-01-28 Sony Corporation Solid-state imaging device, drive method thereof and electronic apparatus
KR101845257B1 (ko) * 2011-02-07 2018-04-04 삼성전자주식회사 이미지 센서
JP6595750B2 (ja) * 2014-03-14 2019-10-23 キヤノン株式会社 固体撮像装置及び撮像システム
KR102569811B1 (ko) * 2016-04-08 2023-08-24 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
KR102467872B1 (ko) * 2016-05-17 2022-11-16 에스케이하이닉스 주식회사 수직 채널을 갖는 전달 트랜지스터 및 박막 채널을 갖는 픽셀 트랜지스터들을 포함하는 이미지 센서
US10051218B1 (en) * 2017-02-03 2018-08-14 SmartSens Technology (U.S.), Inc. Stacked image sensor pixel cell with in-pixel vertical channel transfer transistor and reflective structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287743A (ja) * 2009-06-11 2010-12-24 Sony Corp 半導体装置及びその製造方法、固体撮像素子
JP2012199489A (ja) * 2011-03-23 2012-10-18 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP2019165136A (ja) * 2018-03-20 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器

Also Published As

Publication number Publication date
WO2021186921A1 (ja) 2021-09-23
CN115244919B (zh) 2026-07-21
DE112021001701T5 (de) 2023-02-09
CN115244919A (zh) 2022-10-25
US20230154948A1 (en) 2023-05-18

Similar Documents

Publication Publication Date Title
BR112021017747A2 (cg-RX-API-DMAC7.html)
BR102020016764B1 (pt) Forma de dosagem intrauretral de medicamento; e dispositivo
CN306164776S (zh) 雕花气囊梳(花间之约)
CN305528705S (zh) 多功能卡片工具（唐僧）
CN305619829S (zh) 滤芯
CN305621106S (zh) 搅拌杯（不锈钢内胆）
CN305619267S (zh) 摄像头（海鸟）
CN305565421S (zh) 菜板（常规）
CN305607740S (zh) 智能车钥匙（大黄蜂）
CN305616630S (zh) 包装罐（蔡合盛顶上香椒膏）
CN305609430S (zh) 配饰系列（出水芙蓉系列之兰莲花）
CN305531864S (zh) 超声多普勒胎儿心率仪（fd-600系列）
CN305575339S (zh) 用于手机的图形用户界面
CN305580581S (zh) 滑板车把套（hh2-415）
CN305555522S (zh) 吊灯（玫瑰花6）
CN305570769S (zh) 吊灯（分子魔豆)
CN305572702S (zh) 车载头枕（弯折伸缩）
CN305528082S (zh) 梳妆台（more）
CN305533829S (zh) 床(by-221)
CN305534348S (zh) 椅子坐垫（m1902）
CN305579163S (zh) 电蒸锅灶
CN305559535S (zh) 香炉（莲花）
CN305557003S (zh) 沙发套装(e1923)
CN305534738S (zh) 暖奶器（1）
CN305542574S (zh) 茶叶包装盒（七佛缘03）

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250311

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250326

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250527

A045 Written measure of dismissal of application [lapsed due to lack of payment]

Free format text: JAPANESE INTERMEDIATE CODE: A045

Effective date: 20250930