CN115244919B - 成像元件和成像装置 - Google Patents

成像元件和成像装置

Info

Publication number
CN115244919B
CN115244919B CN202180020440.1A CN202180020440A CN115244919B CN 115244919 B CN115244919 B CN 115244919B CN 202180020440 A CN202180020440 A CN 202180020440A CN 115244919 B CN115244919 B CN 115244919B
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CN
China
Prior art keywords
unit
opening portion
semiconductor substrate
charge
charge transfer
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Active
Application number
CN202180020440.1A
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English (en)
Chinese (zh)
Other versions
CN115244919A (zh
Inventor
高野达也
江田健太郎
奥城慎太郎
内海邦朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN115244919A publication Critical patent/CN115244919A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
CN202180020440.1A 2020-03-18 2021-02-02 成像元件和成像装置 Active CN115244919B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-047920 2020-03-18
JP2020047920 2020-03-18
PCT/JP2021/003680 WO2021186921A1 (ja) 2020-03-18 2021-02-02 撮像素子および撮像装置

Publications (2)

Publication Number Publication Date
CN115244919A CN115244919A (zh) 2022-10-25
CN115244919B true CN115244919B (zh) 2026-07-21

Family

ID=77768267

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180020440.1A Active CN115244919B (zh) 2020-03-18 2021-02-02 成像元件和成像装置

Country Status (5)

Country Link
US (1) US20230154948A1 (cg-RX-API-DMAC7.html)
JP (1) JPWO2021186921A1 (cg-RX-API-DMAC7.html)
CN (1) CN115244919B (cg-RX-API-DMAC7.html)
DE (1) DE112021001701T5 (cg-RX-API-DMAC7.html)
WO (1) WO2021186921A1 (cg-RX-API-DMAC7.html)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629614A (zh) * 2011-02-07 2012-08-08 三星电子株式会社 图像传感器
JP2012199489A (ja) * 2011-03-23 2012-10-18 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び電子機器
US9735197B1 (en) * 2016-05-17 2017-08-15 SK Hynix Inc. Image sensor including a transfer transistor having a vertical channel and pixel transistors having thin film channels

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102556A (ja) * 1999-09-27 2001-04-13 Fuji Film Microdevices Co Ltd 固体撮像装置
JP4497688B2 (ja) * 1999-09-27 2010-07-07 富士フイルム株式会社 固体撮像装置
JP2007036352A (ja) * 2005-07-22 2007-02-08 Fujifilm Holdings Corp 撮像装置、並びに信号処理方法およびプログラム
EP2133918B1 (en) * 2008-06-09 2015-01-28 Sony Corporation Solid-state imaging device, drive method thereof and electronic apparatus
JP2010287743A (ja) * 2009-06-11 2010-12-24 Sony Corp 半導体装置及びその製造方法、固体撮像素子
JP6595750B2 (ja) * 2014-03-14 2019-10-23 キヤノン株式会社 固体撮像装置及び撮像システム
KR102569811B1 (ko) * 2016-04-08 2023-08-24 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
US10051218B1 (en) * 2017-02-03 2018-08-14 SmartSens Technology (U.S.), Inc. Stacked image sensor pixel cell with in-pixel vertical channel transfer transistor and reflective structure
JP2019165136A (ja) * 2018-03-20 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629614A (zh) * 2011-02-07 2012-08-08 三星电子株式会社 图像传感器
JP2012199489A (ja) * 2011-03-23 2012-10-18 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び電子機器
US9735197B1 (en) * 2016-05-17 2017-08-15 SK Hynix Inc. Image sensor including a transfer transistor having a vertical channel and pixel transistors having thin film channels

Also Published As

Publication number Publication date
WO2021186921A1 (ja) 2021-09-23
DE112021001701T5 (de) 2023-02-09
JPWO2021186921A1 (cg-RX-API-DMAC7.html) 2021-09-23
CN115244919A (zh) 2022-10-25
US20230154948A1 (en) 2023-05-18

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