WO2021171408A1 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
WO2021171408A1
WO2021171408A1 PCT/JP2020/007651 JP2020007651W WO2021171408A1 WO 2021171408 A1 WO2021171408 A1 WO 2021171408A1 JP 2020007651 W JP2020007651 W JP 2020007651W WO 2021171408 A1 WO2021171408 A1 WO 2021171408A1
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WIPO (PCT)
Prior art keywords
power supply
cell
wiring
wirings
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/007651
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English (en)
French (fr)
Japanese (ja)
Inventor
祖父江　功弥
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Socionext Inc
Original Assignee
Socionext Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Socionext Inc filed Critical Socionext Inc
Priority to JP2022502649A priority Critical patent/JP7323847B2/ja
Priority to PCT/JP2020/007651 priority patent/WO2021171408A1/ja
Publication of WO2021171408A1 publication Critical patent/WO2021171408A1/ja
Priority to US17/895,785 priority patent/US12484312B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements

Definitions

  • the present disclosure relates to a semiconductor integrated circuit device in which a core region and an IO region in which input / output cells (IO cells) are arranged are formed.
  • Patent Document 1 in order to strengthen the power supply wiring, a technique for connecting the power supply wiring (VDD) / ground wiring (VSS) in the IO cell and the power supply wiring for the internal circuit provided in the internal circuit forming portion to each other. Is disclosed.
  • Patent Document 1 wiring resources are required for both VDD power supply wiring and VSS power supply wiring in the core region, so that the area of the semiconductor integrated circuit device increases. Further, in Patent Document 1, the detailed structure of the wiring connected to the ESD protection device in the IO cell has not been studied.
  • An object of the present disclosure is to provide a configuration in which the ESD resistance of a semiconductor integrated circuit device in which an IO cell is arranged can be improved while suppressing an increase in area.
  • the semiconductor integrated circuit device is arranged in the chip, the core region provided on the chip, the IO region provided around the core region on the chip, and the IO region.
  • the plurality of IO cells include an IO cell sequence composed of a plurality of IO cells arranged in a first direction along the outer edge of the chip, and the plurality of IO cells are signals for inputting, outputting, or inputting / outputting signals.
  • the IO cell includes a power supply IO cell that supplies a first power supply to at least one of the core area and the IO area, and the power supply IO cell is connected to an external connection pad for the first power supply.
  • the signal IO cell is provided with an ESD (Electro-Static Discharge) protection device electrically connected to the first and second external terminals, and the signal IO cell has a plurality of power supply wirings for the second power supply extending in the first direction.
  • the second external terminal is arranged at a position that overlaps with one of the plurality of power supply wirings in the second direction, which is a direction perpendicular to the first direction.
  • the power supply IO cell for supplying the first power supply is provided between the first and second external terminals connected to the external connection pad for the first power supply and between the first power supply and the second power supply. It is equipped with an ESD protection device.
  • the ESD protection device is formed in at least a region between the first external terminal and the second external terminal, and is connected to the first and second external terminals. That is, since the ESD protection device is electrically connected to at least two external terminals, the resistance value of the path from the first power supply to the ESD protection device is low.
  • the second external terminal is arranged at a position that overlaps with one of the plurality of power supply wirings for the second power supply extending in the first direction, which are arranged in the signal IO cell, in the second direction. Therefore, the second external terminal can be arranged without increasing the area of the semiconductor integrated circuit device. Therefore, it is possible to improve the ESD resistance of the semiconductor integrated circuit device in which the IO cell is arranged while suppressing the increase in the area.
  • the semiconductor integrated circuit apparatus According to the semiconductor integrated circuit apparatus according to the present disclosure, it is possible to improve the ESD resistance while suppressing the increase in the area.
  • Top view schematically showing the overall configuration of the semiconductor integrated circuit apparatus according to the embodiment.
  • Top view showing a configuration example of an IO region in the first embodiment are circuit examples of the ESD protection circuit.
  • (A) to (d) are circuit examples of the ESD protection circuit.
  • IO power supply Plan view showing the configuration around the ESD protection device in the IO cell Inverse proportion of the configuration of FIG.
  • Top view showing the configuration around the ESD protection device in the VSSIO cell
  • Top view showing the configuration around the ESD protection device in the core power supply IO cell A modified example of the configuration shown in FIG.
  • FIG. 1 is a plan view schematically showing the overall configuration of the semiconductor integrated circuit device (semiconductor chip) according to the embodiment.
  • the semiconductor integrated circuit device 100 shown in FIG. 1 is provided with a core region 2 in which an internal core circuit is formed and an IO region 3 in which an interface circuit (IO circuit) is formed on the chip 1.
  • the IO region 3 is provided around the core region 2.
  • An IO cell row 5 is provided in the IO region 3 along the outer edge of the chip 1.
  • a plurality of IO cells 10 constituting the interface circuit are arranged in the IO cell row 5.
  • the IO cell 10 is a signal IO cell 11 that inputs, outputs, or inputs / outputs signals, an IO power supply IO cell 21 for supplying power (power supply voltage VDDIO) mainly to the IO area 3, and a ground potential. It includes a VSSIO cell 22 for supplying (power supply voltage VSS) and a core power supply IO cell 23 for supplying power supply (power supply voltage VDD) mainly toward the core region 2.
  • VDDIO is higher than VDD, for example, VDDIO is 3.3V and VDD is 1.0V.
  • the IO power supply IO cell, the VSSIO cell, and the core power supply IO cell are appropriately collectively referred to as a power supply IO cell.
  • the IO area 3 is provided with a power supply wiring 4 extending in the direction in which the IO cells 10 are lined up.
  • the power supply wiring 4 includes a power supply wiring 41 for supplying VSS, a power supply wiring 42 for supplying VDDIO, and a power supply wiring 43 for supplying VDDIO.
  • the power supply wirings 41, 42, and 43 are shown as one wiring in FIG. 1, the power supply wirings 41, 42, and 43 are actually composed of a plurality of wirings, respectively, as will be described later. You may be.
  • a plurality of external connection pads are arranged in the semiconductor integrated circuit device 100.
  • FIG. 2 is a plan view showing a configuration example of the IO region 3 of the semiconductor integrated circuit device 100 according to the present embodiment, and corresponds to an enlarged view of a portion W of FIG.
  • the internal configuration of the IO cell 10, signal wiring, and the like are not shown.
  • different types of hatches are attached to the power supply wiring for supplying VDDIO, the power supply wiring for supplying VSS, and the power supply wiring for supplying VDD. The same applies to the following plan view.
  • the IO cell row 5 is a plurality of IO cells 10 arranged in the X direction (horizontal direction in the drawing, a direction along the outer edge of the chip 1 and corresponding to the first direction), specifically, a signal IO. It includes a cell 11, an IO power supply IO cell 21, a VSSIO cell 22, and a core power supply IO cell 23, which are power supply cells.
  • the height of the IO cell 10 that is, the size in the Y direction (corresponding to the vertical direction in the drawing and the second direction perpendicular to the first direction) is the same.
  • the signal IO cell 11 contains circuits necessary for exchanging signals with the outside of the semiconductor integrated circuit device 100 or with the core region 2, for example, a level shifter circuit, an output buffer circuit, and ESD protection. Circuits and the like are included.
  • the IO power supply IO cell 21, VSSIO cell 22, and core power supply IO cell 23 supply each power supply to the external connection pad to the inside of the semiconductor integrated circuit device 100, and includes an ESD protection circuit and the like.
  • the IO cell generally has a high power supply voltage region including an ESD protection circuit and an output buffer for outputting a signal to the outside of the semiconductor integrated circuit device, and a low voltage region including a circuit for inputting / outputting a signal to the inside of the semiconductor integrated circuit device. It has a power supply voltage range.
  • the IO cell 10 in FIG. 2 is divided into a low power supply voltage region 31 and a high power supply voltage region 32 in the Y direction.
  • the low power supply voltage region 31 is on the core region side
  • the high power supply voltage region 32 is on the chip edge side.
  • a plurality of power supply wirings extending in the X direction are provided in the area of the IO cell row 5. Specifically, the power supply wirings 411, 421, 413, 414, 415 constituting the power supply wiring 41 for supplying VSS, and the power supply wirings 421, 422, 423, 424, 425, VDD constituting the power supply wiring 42 for supplying VDDIO.
  • the power supply wirings 431, 432.433 constituting the power supply wiring 43 for supplying the above are provided.
  • the low power supply voltage region 31 is provided with power supply wirings 431 to 433 for supplying VDD and power supply wiring 415 for supplying VSS.
  • the high power supply voltage region 32 is provided with power supply wirings 411 to 414 for supplying VSS and power supply wirings 421 to 425 for supplying VDDIO.
  • the power supply wirings 432 and 433 for supplying VDD are provided at positions protruding from the low power supply voltage region 31 to the core region 2 side.
  • the power supply wiring 43 for supplying VDD has a portion (power supply wiring 432, 433) protruding from the low power supply voltage region 31 to the core region 2 side.
  • transistors, wiring, and the like arranged in the core region 2 may be arranged in the lower layer of the power supply wirings 432 and 433. That is, the portion protruding from the low power supply voltage region 31 to the core region 2 side may have an overlap with the transistor arranged in the core region 2 in a plan view.
  • the external connection pad 51 is for signal input / output, and is connected to the signal IO cell 11 via a wiring 61 extending in the Y direction.
  • the external connection pad 52 is for VDDIO and is connected to the IO power supply IO cell 21 via the wiring 62 extending in the Y direction.
  • the external connection pad 52 is also connected to the power supply wirings 421 to 425 via the wiring 62.
  • the external connection pad 53 is for VSS, and is connected to the VSSIO cell 22 via a wiring 63 extending in the Y direction.
  • the external connection pad 53 is also connected to the power supply wirings 411 to 415 via the wiring 63.
  • the external connection pad 54 is for VDD and is connected to the core power supply IO cell 23 via a wiring 64 extending in the Y direction.
  • the external connection pad 54 is also connected to the power supply wirings 431 to 433 via the wiring 64.
  • reinforcing wirings 81 and 82 for connecting the power supply wirings 411 to 415 to each other are provided.
  • the reinforcing wirings 81 and 82 extend in the Y direction in the wiring layer higher than the power supply wirings 411 to 415.
  • the thickness of the reinforcing wirings 81 and 82 is preferably larger than the thickness of the power supply wirings 411 to 415.
  • the power supply wirings 431 to 433 are connected to each other by the reinforcing wiring 71 extending in the Y direction.
  • the reinforcing wiring 71 extends in the Y direction in the wiring layer above the power supply wirings 431 to 433.
  • the thickness of the reinforcing wiring 71 is preferably larger than the thickness of the power supply wirings 431 to 433.
  • the power supply wirings 411 to 415 and 421 to 425 and 431 to 433 extending in the X direction are provided in the same wiring layer.
  • the wirings 61 to 64, 71, 81, 82 extending in the Y direction are above the power supply wirings 411 to 415 and 421 to 425, 431 to 433 extending in the X direction, and are provided in the same wiring layer. It is assumed that there is.
  • the power supply IO cell is provided with an ESD protection circuit having an ESD protection device.
  • the area where the ESD protection device is arranged is indicated by a broken line (denoted as “PR”).
  • PR the area where the ESD protection device is arranged.
  • the ESD protection device is provided between VDDIO and VSS.
  • the ESD protection device is provided between VDD and VSS.
  • the ESD protection device for example, a MOS transistor is used.
  • 3 and 4 are circuit examples of the ESD protection circuit.
  • 3 (a) to 3 (d) are examples of using an N-type MOS transistor PDN as an ESD protection device
  • FIGS. 4 (a) to 4 (d) show a P-type MOS transistor PDP as an ESD protection device. This is an example used.
  • external connection pads 52, wiring 62, and external terminals 111 and 112 connected via vias are arranged in the vicinity of the ESD protection device.
  • VDDIO is supplied to the external terminals 111 and 112.
  • the external terminal 111 is formed at substantially the same position in the Y direction as the power supply wiring 411 that supplies VSS.
  • external terminals 121 and 122 connected to the external connection pad 53 via the wiring 63 and vias are arranged in the vicinity of the ESD protection device.
  • VSS is supplied to the external terminals 121 and 122.
  • the external terminal 121 is formed at substantially the same position in the Y direction as the power supply wiring 424 that supplies VDDIO.
  • external terminals 131 and 132 connected to the external connection pad 54 via wiring 64 and vias are arranged in the vicinity of the ESD protection device.
  • VDD is supplied to the external terminals 131 and 132.
  • the external terminal 131 is formed at substantially the same position in the Y direction as the power supply wiring 411 that supplies VSS.
  • FIG. 5 is a plan view showing the configuration around the ESD protection device in the IO power supply IO cell 21.
  • the wiring 62 extending in the Y direction is omitted in order to make the figure easier to see. The same applies to the subsequent detailed drawings.
  • wirings 211,212,213 and wirings 211,222 extending in the Y direction are formed in the wiring layer below the wiring layer on which the external terminals 111 and 112 and the power supply wirings 421 and 413 are formed.
  • a transistor 151 as an ESD protection device is configured in the lower layers of the wirings 211,212, 213 and the wirings 221,222.
  • the wirings 211, 212, and 213 are connected to the diffusion layer of the transistor 151, and are connected to the external terminals 111 and 112 via contacts.
  • the wirings 221, 222 are connected to the diffusion layer of the transistor 151, and are connected to the power supply wirings 421 and 413 via contacts.
  • the drain / source of the transistor 151 is connected to VDDIO and VSS, respectively.
  • the source of the transistor 151 is connected to the power supply wirings 421 and 413 passing through the upper layer of the transistor 151 via the wirings 221 and 222. Therefore, the resistance value of the path from VSS to the transistor 151 becomes low. Further, the drain of the transistor 151 is connected to two external terminals 111 and 112 arranged near both ends in the Y direction in the upper layer of the transistor via wirings 211, 212 and 213. Therefore, the resistance value of the path from VDDIO to the transistor 151 becomes low.
  • FIG. 6 is a plan view showing inverse proportion.
  • the external terminal 111 is omitted, and instead, the power supply wiring 411 for supplying VSS passes through the IO power supply IO cell 21.
  • VDDIO is supplied from only one external terminal 112 to the drain of the transistor 151, the resistance value in the path from VDDIO becomes large in the portion far away from the external terminal 112.
  • the resistance value from the external terminal 112 to the portion (lower end portion) of the transistor 151 farthest from the external terminal 112 is R.
  • the distance from the external terminals 111 and 112 to the portion (central portion) of the transistor 151 farthest from the external terminals 111 and 112 is halved in inverse proportion.
  • VDDIO is supplied from the two external terminals 111 and 112
  • the two resistors are connected in parallel. Therefore, in the present embodiment, the resistance value from the external terminals 111 and 112 to the portion of the transistor 151 farthest from the external terminals 111 and 112 is 1/4 of the inverse proportion, that is, R ⁇ (1/4). ..
  • the external terminal 111 can be formed by removing a part of the power supply wiring 411. Therefore, the design is easy and does not increase the area. Further, since only a part of the power supply wiring 411 is removed, an increase in the resistance value in the VSS supply is suppressed.
  • FIG. 7 is a plan view showing the configuration around the ESD protection device in the VSSIO cell 22.
  • wirings 231,232,233 and wirings 241,242 extending in the Y direction are formed in the wiring layer below the wiring layer on which the external terminals 121 and 122 and the power supply wirings 421,422 and 423 are formed.
  • a transistor 152 as an ESD protection device is configured in the lower layers of the wirings 231,232, 233 and the wirings 241, 242.
  • the wirings 231, 232, and 233 are connected to the diffusion layer of the transistor 152, and are connected to the power supply wirings 421, 422, and 423 via contacts.
  • Wiring 241,242 is connected to the diffusion layer of the transistor 152, and is also connected to the external terminals 121 and 122 via contacts.
  • the drain / source of the transistor 152 is connected to VDDIO and VSS, respectively.
  • the drain of the transistor 152 is connected to the power supply wiring 421, 422, 423 passing through the upper layer of the transistor 152 via the wirings 231, 232, 233. Therefore, the resistance value in the path from VDDIO to the transistor 152 becomes low. Further, the source of the transistor 152 is connected to two external terminals 121 and 122 arranged near both ends in the Y direction in the upper layer of the transistor 152 via wirings 241, 242. Therefore, the resistance value in the path from VSS to the transistor 152 becomes low.
  • the external terminal 121 can be formed by removing a part of the power supply wiring 424. Therefore, the design is easy and does not increase the area. Further, since only a part of the power supply wiring 424 is removed, the increase in the resistance value in the VDDIO supply is also suppressed.
  • FIG. 8 is a plan view showing the configuration around the ESD protection device in the core power supply IO cell 23.
  • wirings 251,252,253 and wirings 261,262 extending in the Y direction are formed in the wiring layer below the wiring layer on which the external terminals 131 and 132 and the power supply wirings 421 and 413 are formed.
  • a transistor 153 as an ESD protection device is configured under the wirings 251,152,253 and the wirings 261,262.
  • the wirings 251, 252, 253 are connected to the diffusion layer of the transistor 153, and are connected to the external terminals 131, 132 via contacts.
  • the wirings 261,262 are connected to the diffusion layer of the transistor 153, and are connected to the power supply wirings 421 and 413 via contacts.
  • the drain / source of the transistor 153 is connected to VDD and VSS, respectively.
  • the source of the transistor 153 is connected to the power supply wirings 421 and 413 passing through the upper layer of the transistor 153 via the wirings 261,262. Therefore, the resistance value in the path from VSS to the transistor 153 becomes low. Further, the drain of the transistor 153 is connected to two external terminals 131 and 132 arranged near both ends in the Y direction in the upper layer of the transistor via wirings 251, 252 and 253. Therefore, the resistance value in the path from VDD to the transistor 153 becomes low.
  • the external terminal 131 can be formed by removing a part of the power supply wiring 411. Therefore, the design is easy and does not increase the area. Further, since only a part of the power supply wiring 411 is removed, an increase in the resistance value in the VSS supply is suppressed.
  • the IO power supply IO cell 21 for supplying VDDIO is provided between the external terminals 111 and 112 connected to the external connection pad 52 for VDDIO and the ESD between VDDIO and VSS. It includes a protection device 151.
  • the ESD protection device 151 is formed in at least a region between the external terminal 111 and the external terminal 112, and is connected to the external terminals 111 and 112. That is, since the ESD protection device 151 is electrically connected to at least two external terminals 111 and 112, the resistance value of the path from VDDIO to the ESD protection device 151 is low.
  • the external terminal 111 is arranged at substantially the same position in the Y direction as the power supply wiring 411 for VSS extending in the X direction arranged in the signal IO cell 11. Therefore, the external terminals 111 can be arranged without increasing the area of the semiconductor integrated circuit device 100.
  • the VSSIO cell 22 that supplies VSS includes external terminals 121 and 122 connected to the external connection pad 53 for VSS, and an ESD protection device 152 provided between VDDIO and VSS.
  • the ESD protection device 152 is formed in at least a region between the external terminal 121 and the external terminal 122, and is connected to the external terminals 121 and 122. That is, since the ESD protection device 152 is electrically connected to at least two external terminals 121 and 122, the resistance value of the path from VSS to the ESD protection device 152 is low.
  • the external terminal 121 is arranged at substantially the same position in the Y direction as the power supply wiring 424 for VDDIO extending in the X direction arranged in the signal IO cell 11. Therefore, the external terminals 121 can be arranged without increasing the area of the semiconductor integrated circuit device 100.
  • the core power supply IO cell 23 that supplies VDD includes external terminals 131 and 132 connected to an external connection pad 54 for VDD, and an ESD protection device 153 provided between VDD and VSS.
  • the ESD protection device 153 is formed in at least a region between the external terminal 131 and the external terminal 132, and is connected to the external terminals 131 and 132. That is, since the ESD protection device 153 is electrically connected to at least two external terminals 131 and 132, the resistance value of the path from VDD to the ESD protection device 153 is low.
  • the external terminal 131 is arranged at substantially the same position in the Y direction as the power supply wiring 411 for VSS extending in the X direction arranged in the signal IO cell 11. Therefore, the external terminals 111 can be arranged without increasing the area of the semiconductor integrated circuit device 100.
  • the ESD resistance of the semiconductor integrated circuit device 100 in which the IO cell 10 is arranged can be improved while suppressing an increase in the area.
  • the external terminals 111 and 131 and the power supply wiring 411 are arranged at substantially the same positions in the Y direction, but the external terminals 111 and 131 and the power supply wiring 411 are arranged in the Y direction. It suffices to have an overlap in.
  • the external terminal 121 and the power supply wiring 424 are arranged at substantially the same position in the Y direction, but the external terminal 121 and the power supply wiring 424 may have overlap in the Y direction. ..
  • the power supply IO cell is provided with two external terminals for the ESD protection device, but three or more external terminals may be provided.
  • FIG. 9 is a modified example of the configuration of FIG. 7.
  • an external terminal 123 for supplying VSS is provided instead of the power supply wiring 422.
  • the external terminal 123 is arranged at a position that overlaps with the power supply wiring 422 arranged in the signal IO cell 11 in the Y direction.
  • the external terminal 123 is connected to the external connection pad 53, and is connected to the transistor 152 via the wirings 241, 242. Thereby, the resistance value in the path from VSS to the transistor 152 can be further reduced as compared with the above-described embodiment.
  • the arrangement position of the ESD protection device in the power supply IO cell is not limited to that shown in the figure.
  • the ESD protection device may be arranged in an area other than the area between the external terminal 111 and the external terminal 112.
  • the VDD power supply wiring, VSS power supply wiring, and VDDIO power supply wiring extending in the X direction are provided in the same wiring layer, but may be provided in different wiring layers.
  • each power supply wiring may be composed of a single wiring layer or may be composed of a plurality of wiring layers.
  • the number of wirings constituting the VDD power supply wiring, the VSS power supply wiring, and the VDDIO power supply wiring is not limited to those shown in the above-described embodiment, and may be configured by, for example, one wiring, or may be arbitrary. It may be composed of a number of wires.
  • the wiring extending in the Y direction and the external terminal provided for the ESD protection device may be composed of a single wiring layer or a plurality of wiring layers.
  • the reinforcing wiring extending in the Y direction is provided in the same wiring layer, but may be provided in different wiring layers.
  • each reinforcing wiring may be composed of a single wiring layer or may be composed of a plurality of wiring layers.
  • the wiring of the lowermost layer of the reinforcing wiring is higher than the wiring of the uppermost layer of the power supply wiring extending in the X direction.
  • the number of reinforcing wires is not limited to that shown in the above-described embodiment. For example, in the signal IO cell 11, two reinforcing wirings are provided, but one reinforcing wiring may be provided, or three or more reinforcing wirings may be provided.
  • VSS power supply wiring can be strengthened by providing the reinforcing wiring for connecting the VSS power supply wiring in the low power supply voltage region and the VSS power supply wiring in the high power supply voltage region to each other.
  • the IO cell row 5 is provided in the entire peripheral portion of the semiconductor integrated circuit device 100, but the present invention is not limited to this, and for example, the semiconductor integrated circuit device 100. It may be provided in a part of the peripheral portion. Further, the configuration of the present embodiment does not have to be applied to the entire IO cell row 5, and may be applied to a part of the range.
  • Chip 2 Core area 3 IO circuit 5 IO cell row 10 IO cell 11 Signal IO cell 21 IO power supply IO cell (power supply IO cell) 22 VSSIO cell (power supply IO cell) 23 core power supply IO cell (power supply IO cell) 100 Semiconductor integrated circuit device 111, 112, 121, 122, 123, 131, 132 External terminals 151, 152, 153 Transistors (ESD protection device) 411,421,413 Power supply wiring 421,422,423,424 Power supply wiring

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PCT/JP2020/007651 2020-02-26 2020-02-26 半導体集積回路装置 Ceased WO2021171408A1 (ja)

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JP2022502649A JP7323847B2 (ja) 2020-02-26 2020-02-26 半導体集積回路装置
PCT/JP2020/007651 WO2021171408A1 (ja) 2020-02-26 2020-02-26 半導体集積回路装置
US17/895,785 US12484312B2 (en) 2020-02-26 2022-08-25 Semiconductor integrated circuit device

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PCT/JP2020/007651 WO2021171408A1 (ja) 2020-02-26 2020-02-26 半導体集積回路装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026074865A1 (ja) * 2024-10-04 2026-04-09 株式会社ソシオネクスト 半導体集積回路装置

Citations (8)

* Cited by examiner, † Cited by third party
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