JPWO2021171408A1 - - Google Patents
Info
- Publication number
- JPWO2021171408A1 JPWO2021171408A1 JP2022502649A JP2022502649A JPWO2021171408A1 JP WO2021171408 A1 JPWO2021171408 A1 JP WO2021171408A1 JP 2022502649 A JP2022502649 A JP 2022502649A JP 2022502649 A JP2022502649 A JP 2022502649A JP WO2021171408 A1 JPWO2021171408 A1 JP WO2021171408A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
Landscapes
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/007651 WO2021171408A1 (ja) | 2020-02-26 | 2020-02-26 | 半導体集積回路装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021171408A1 true JPWO2021171408A1 (https=) | 2021-09-02 |
| JPWO2021171408A5 JPWO2021171408A5 (https=) | 2022-10-20 |
| JP7323847B2 JP7323847B2 (ja) | 2023-08-09 |
Family
ID=77489982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022502649A Active JP7323847B2 (ja) | 2020-02-26 | 2020-02-26 | 半導体集積回路装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12484312B2 (https=) |
| JP (1) | JP7323847B2 (https=) |
| WO (1) | WO2021171408A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026074865A1 (ja) * | 2024-10-04 | 2026-04-09 | 株式会社ソシオネクスト | 半導体集積回路装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04177861A (ja) * | 1990-11-13 | 1992-06-25 | Nec Corp | 半導体装置 |
| JPH05175439A (ja) * | 1991-12-26 | 1993-07-13 | Kawasaki Steel Corp | 半導体静電保護回路 |
| JP2002246470A (ja) * | 2001-02-13 | 2002-08-30 | Seiko Instruments Inc | 半導体装置 |
| JP2008078354A (ja) * | 2006-09-21 | 2008-04-03 | Renesas Technology Corp | 半導体装置 |
| JP2013021249A (ja) * | 2011-07-14 | 2013-01-31 | Toshiba Corp | 半導体集積装置 |
| JP2015532530A (ja) * | 2012-09-26 | 2015-11-09 | ベイサンド インコーポレーテッドＢａｙｓａｎｄ Ｉｎｃ． | 集積回路に用いるフレキシブルで実装効率の良い入出力回路素子 |
| WO2018180010A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社ソシオネクスト | 半導体集積回路装置 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7687858B2 (en) * | 1999-01-15 | 2010-03-30 | Broadcom Corporation | System and method for ESD protection |
| US6765245B2 (en) * | 2002-03-25 | 2004-07-20 | Bae Systems Information And Electronic Systems Integration Inc. | Gate array core cell for VLSI ASIC devices |
| US7401302B2 (en) * | 2004-04-29 | 2008-07-15 | Taiwan Semiconductor Manufacturing Company Ltd. | System on chip development with reconfigurable multi-project wafer technology |
| US7305646B2 (en) * | 2005-05-09 | 2007-12-04 | Lsi Corporation | Relocatable mixed-signal functions |
| US7272802B2 (en) * | 2005-05-11 | 2007-09-18 | Lsi Corporation | R-cells containing CDM clamps |
| US7373622B2 (en) * | 2005-05-13 | 2008-05-13 | Lsi Logic Corporation | Relocatable built-in self test (BIST) elements for relocatable mixed-signal elements |
| US7478354B2 (en) * | 2005-05-20 | 2009-01-13 | Lsi Corporation | Use of configurable mixed-signal building block functions to accomplish custom functions |
| US7882453B2 (en) * | 2007-10-17 | 2011-02-01 | Rapid Bridge Llc | Semiconductor device metal programmable pooling and dies |
| JP5356904B2 (ja) * | 2009-04-27 | 2013-12-04 | パナソニック株式会社 | 半導体集積回路チップ |
| US7969186B2 (en) * | 2009-06-02 | 2011-06-28 | Mips Technologies | Apparatus and method for forming a mixed signal circuit with fully customizable analog cells and programmable interconnect |
| US9166594B2 (en) | 2012-05-28 | 2015-10-20 | Baysand Inc. | Flexible, space-efficient I/O circuitry for integrated circuits |
| US9577640B1 (en) | 2012-05-28 | 2017-02-21 | Baysand Inc. | Flexible, space-efficient I/O circuitry for integrated circuits |
| KR20140108982A (ko) * | 2013-03-04 | 2014-09-15 | 삼성전자주식회사 | 메모리 장치 및 그 제조 방법 |
| US10396550B2 (en) * | 2016-09-30 | 2019-08-27 | Texas Instruments Incorporated | ESD protection charge pump active clamp for low-leakage applications |
| CN110637358B (zh) * | 2017-05-15 | 2022-09-23 | 株式会社索思未来 | 半导体集成电路装置 |
| CN112567507B (zh) * | 2018-08-28 | 2024-07-05 | 株式会社索思未来 | 半导体集成电路装置 |
| US12464826B2 (en) * | 2021-10-29 | 2025-11-04 | Renesas Electronics Corporation | Semiconductor device |
-
2020
- 2020-02-26 WO PCT/JP2020/007651 patent/WO2021171408A1/ja not_active Ceased
- 2020-02-26 JP JP2022502649A patent/JP7323847B2/ja active Active
-
2022
- 2022-08-25 US US17/895,785 patent/US12484312B2/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04177861A (ja) * | 1990-11-13 | 1992-06-25 | Nec Corp | 半導体装置 |
| JPH05175439A (ja) * | 1991-12-26 | 1993-07-13 | Kawasaki Steel Corp | 半導体静電保護回路 |
| JP2002246470A (ja) * | 2001-02-13 | 2002-08-30 | Seiko Instruments Inc | 半導体装置 |
| JP2008078354A (ja) * | 2006-09-21 | 2008-04-03 | Renesas Technology Corp | 半導体装置 |
| JP2013021249A (ja) * | 2011-07-14 | 2013-01-31 | Toshiba Corp | 半導体集積装置 |
| JP2015532530A (ja) * | 2012-09-26 | 2015-11-09 | ベイサンド インコーポレーテッドＢａｙｓａｎｄ Ｉｎｃ． | 集積回路に用いるフレキシブルで実装効率の良い入出力回路素子 |
| WO2018180010A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| US20190385945A1 (en) * | 2017-03-29 | 2019-12-19 | Socionext Inc. | Semiconductor integrated circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| US12484312B2 (en) | 2025-11-25 |
| JP7323847B2 (ja) | 2023-08-09 |
| WO2021171408A1 (ja) | 2021-09-02 |
| US20220415882A1 (en) | 2022-12-29 |
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