WO2021170006A1 - 显示面板及其制备方法、显示装置 - Google Patents

显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2021170006A1
WO2021170006A1 PCT/CN2021/077723 CN2021077723W WO2021170006A1 WO 2021170006 A1 WO2021170006 A1 WO 2021170006A1 CN 2021077723 W CN2021077723 W CN 2021077723W WO 2021170006 A1 WO2021170006 A1 WO 2021170006A1
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WO
WIPO (PCT)
Prior art keywords
light
layer
display panel
display
base substrate
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PCT/CN2021/077723
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English (en)
French (fr)
Inventor
丁小梁
王海生
刘英明
秦云科
李扬冰
王雷
王文娟
赵方圆
张平
Original Assignee
京东方科技集团股份有限公司
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Priority to US17/628,829 priority Critical patent/US20220271104A1/en
Publication of WO2021170006A1 publication Critical patent/WO2021170006A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/868—Arrangements for polarized light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a display panel, a manufacturing method thereof, and a display device.
  • OLED display panels have the advantages of self-luminescence, low energy consumption, thinness, and high color saturation, and are widely used in various electronic devices including computers, mobile phones and other electronic products.
  • a display panel includes: a display substrate, including: a base substrate; a display structure layer arranged on the base substrate; wherein the display structure layer includes a plurality of pixels stacked and arranged on the base substrate in sequence A circuit and a plurality of light-emitting devices, and the pixel circuit is electrically connected to a corresponding light-emitting device to drive the light-emitting device to emit light; a light detection layer located on the non-light emitting side of the light-emitting device, the light detection layer is configured to detect the light-emitting device The luminous intensity; the transparent cover located on the light-emitting side of the light-emitting device, the non-light-emitting side of the light-emitting device is opposite to the light-emitting side of the light-emitting device; located between the display substrate and the transparent cover and in turn A polarizing plate and a first quarter wave plate are stacked, and the polarizing plate is closer to the display substrate than the first
  • the optical axis of the first quarter wave plate and the transmission axis of the polarizer form an angle of approximately 45°.
  • the display panel further includes a second quarter wave plate located between the display substrate and the polarizer.
  • the angle between the optical axis of the second quarter wave plate and the transmission axis of the polarizer is approximately 45°.
  • the light emitting device includes a pixel electrode, a light emitting layer, and a common electrode;
  • the light detection layer includes at least one photodetector arranged in a one-to-one correspondence with the at least one light emitting layer;
  • the common electrode and the at least one light The light transmittance of the corresponding part of the detector is about 5%.
  • the common electrode includes at least one light-through hole, the at least one light-through hole corresponds to the at least one photodetector one-to-one, and the area of one light-through hole occupies the common electrode and one photodetector.
  • the surface area of the corresponding part is 4% to 6%.
  • the common electrode is thinned to make the common electrode transparent.
  • the light-emitting device includes a pixel electrode, a light-emitting layer, and a common electrode;
  • the photodetection layer includes at least one photodetector arranged in a one-to-one correspondence with the at least one light-emitting layer;
  • the light transmittance of the pixel electrode is about 5%.
  • the pixel electrode corresponding to the at least one photodetector includes a light-through hole, and the area of one light-through hole accounts for 4% to 6% of the surface area of the corresponding pixel electrode.
  • the at least one pixel electrode is thinned to realize that the at least one pixel electrode can transmit light.
  • each pixel circuit includes a plurality of thin film transistors, and the thin film transistors are metal oxide thin film transistors.
  • the photodetection layer includes at least one photodetector, and each photodetector includes a photosensitive device and a thin film transistor connected to the photosensitive device, and the thin film transistor is an amorphous silicon thin film transistor.
  • the photosensitive device includes a transparent first electrode and a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode, and the photoelectric conversion layer is configured to Converts the absorbed light into electrical energy.
  • the first electrode of the photosensitive device is connected to the common power line
  • the second electrode is connected to the source of the thin film transistor
  • the gate of the thin film transistor is connected to the gate line
  • the thin film transistor The drain is connected to the read signal line
  • the gate line is arranged on the base substrate along one direction
  • the data line and the common power line that are insulated and crossed with the gate line are arranged on the substrate along the other direction
  • the common power line is parallel to the data line
  • the gate lines and the data lines that are arranged crossing each other define a plurality of sub-pixels, and each sub-pixel has a pixel circuit and a light-emitting device.
  • the display structure layer and the light detection layer are connected by an adhesive layer.
  • a display device in another aspect, includes the display panel as described in the above embodiment.
  • a method for manufacturing the display panel described in the foregoing embodiment includes: forming the display structure layer on one side of the base substrate, and sequentially bonding the polarizer and the The first quarter wave plate and the transparent cover plate; the light detection layer is bonded by glue on the side of the display structure layer away from the base substrate.
  • the first quarter wave plate, and the transparent cover are sequentially bonded by glue on the side of the base substrate away from the display structure layer
  • a second quarter wave plate is bonded to the side of the base substrate away from the display structure layer through glue.
  • a method for manufacturing the display panel described in the foregoing embodiment includes: sequentially forming a plurality of pixel circuits, the light detection layer, and a plurality of light-emitting devices on one side of the base substrate, and the plurality of pixel circuits and the plurality of light-emitting devices constitute the display Structural layer; on the side of the plurality of light-emitting devices away from the base substrate, the polarizer, the first quarter wave plate and the transparent cover are sequentially bonded by glue.
  • the first quarter wave plate, and the transparent cover are sequentially bonded by glue on the side of the plurality of light emitting devices away from the base substrate , Bonding the second quarter wave plate on the side of the plurality of light-emitting devices away from the base substrate through glue.
  • FIG. 1 is a schematic structural diagram of a display panel according to some embodiments.
  • FIG. 2 is a schematic diagram of a structure of a display substrate according to some embodiments.
  • FIG. 3 is a schematic structural diagram of another display substrate according to some embodiments.
  • 4A is a schematic structural diagram of another display panel according to some embodiments.
  • 4B is a schematic structural diagram of still another display panel according to some embodiments.
  • FIG. 5 is a schematic structural diagram of still another display panel according to some embodiments.
  • FIG. 6 is a schematic circuit diagram of a photosensitive device and a thin film transistor according to some embodiments.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, “plurality” means two or more.
  • the expressions “coupled” and “connected” and their extensions may be used.
  • the term “connected” may be used when describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other.
  • the term “coupled” may be used when describing some embodiments to indicate that two or more components have direct physical or electrical contact.
  • the term “coupled” or “communicatively coupled” may also mean that two or more components are not in direct contact with each other, but still cooperate or interact with each other.
  • the embodiments disclosed herein are not necessarily limited to the content of this document.
  • At least one of A, B, and C has the same meaning as “at least one of A, B, or C", and both include the following combinations of A, B, and C: only A, only B, only C, A and B The combination of A and C, the combination of B and C, and the combination of A, B and C.
  • Some embodiments of the present disclosure provide a display panel 1. As shown in FIG. 1
  • the transparent cover plate 20 is used to protect the film layer included in the display substrate 10, such as the light-emitting layer 1321; or, to protect the base substrate 11 of the display substrate 10.
  • the above-mentioned display panel 1 may be an organic light-emitting diode display (OLED) or a quantum dot light emitting diode display (QLED).
  • OLED organic light-emitting diode display
  • QLED quantum dot light emitting diode display
  • the display substrate 10 includes a base substrate 11, a plurality of pixel circuits 12 and a plurality of light-emitting devices 13 sequentially arranged on the base substrate 11.
  • the plurality of pixel circuits 12 and the plurality of light-emitting devices 13 may be referred to as a display structure layer.
  • the display substrate 10 also includes a gate line arranged along a direction on the base substrate 11, a data line insulated and crossed with the gate line, and a common power line.
  • the common power line is generally parallel to the data line.
  • a plurality of sub-pixels can be defined by gate lines and data lines (and common power lines) arranged crosswise.
  • Each sub-pixel has a pixel circuit 12 and a light emitting device 13, and the pixel circuit 12 is electrically connected to the light emitting device 13 to drive the light emitting device 13 to emit light.
  • the pixel circuit 12 includes a plurality of thin film transistors 121 and at least one capacitor, and each thin film transistor 121 may adopt a top gate or a bottom gate structure.
  • each thin film transistor 121 may adopt a top gate or a bottom gate structure.
  • the thin film transistor 121 when it has a top gate structure, it includes an active layer AL, a gate insulating layer GI, a gate metal layer GM (to form the gate 1211), and an interlayer dielectric which are sequentially disposed on the base substrate 11.
  • the layer ILD, the source and drain metal layer SD (the source electrode 1212 and the drain electrode 1213 are formed).
  • FIG. 1 the source and drain metal layer SD
  • the thin film transistor 121 when it has a bottom gate structure, it includes a gate metal layer GM (to form a gate electrode 1211), a gate insulating layer GI, an active layer AL, a source and drain layer which are sequentially disposed on the base substrate 11.
  • the metal layer SD (forms the source electrode 1212 and the drain electrode 1213).
  • the active layer AL of the thin film transistor 121 may be composed of amorphous silicon, single crystal silicon, polycrystalline silicon, or an oxide semiconductor.
  • the active layer AL includes a channel region that is not doped with impurities, and a source region and a drain region formed by doping impurities on both sides of the channel region.
  • the doped impurities vary with the type of thin film transistor, and may be N-type impurities or P-type impurities.
  • the capacitor (not shown in FIGS. 2 and 3) includes a first electrode plate and a second electrode plate, and an interlayer insulating film as a dielectric is arranged between the two electrode plates.
  • FIG. 2 and FIG. 3 only show the structure and connection relationship of the driving thin film transistor (the structure in the dashed circle in FIG. 2 and FIG. 3) and the light-emitting device 13, according to the description of the context, those skilled in the art can fully determine the switching transistor The structure and the connection relationship with other parts.
  • the gate electrode 1211 of the switching thin film transistor is connected to the gate line, the source electrode 1212 is connected to the data line, and the drain electrode 1213 is connected to the gate electrode 1211 of the driving thin film transistor.
  • the gate electrode 1211 of the driving thin film transistor is connected to the drain electrode 1213 of the switching thin film transistor, the source electrode 1212 is connected to the common power line, and the drain electrode 1213 is connected to the pixel electrode 131 of the light emitting device 13 through a via hole.
  • the first plate of the capacitor is connected to the gate 1211 of the driving thin film transistor, and the second plate is connected to the source 1212 of the driving thin film transistor.
  • the switching thin film transistor is turned on by the gate voltage applied to the gate line, thereby transmitting the data voltage applied to the data line to the driving thin film transistor.
  • the voltage corresponding to the absolute value of the difference is stored in the capacitor and stored in the capacitor
  • the current corresponding to the voltage of 1 flows into the light emitting device 13 through the driving thin film transistor, so that the light emitting device 13 emits light.
  • a light-emitting device 13 includes a pixel electrode 131, a light-emitting functional layer 132, and a common electrode 133 stacked in sequence, one of the pixel electrode 131 and the common electrode 133 is an anode (used to provide holes) The other is the cathode (used to provide electrons).
  • the pixel electrode 131 and the common electrode 133 respectively inject holes and electrons into the light-emitting functional layer 132. When the holes and electrons are combined, the excitons (excitons) are transitioned from the excited state to the ground state. When constitutes light.
  • the pixel electrode 131 may be formed of a metal with high reflectivity, and the common electrode 133 may be formed of a transparent conductive film.
  • the light of the light-emitting function layer 132 is reflected by the pixel electrode 131 and emitted to the outside through the common electrode 123, thereby forming a top-emission type light-emitting device.
  • the pixel electrode 131 is formed of a transparent conductive film and the common electrode 133 is formed of a metal with high reflectivity, a bottom emission type light emitting device can be formed.
  • a double-sided light emitting type light emitting device may be formed.
  • the material of the transparent conductive film may be, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide, Indium Zinc Oxide), or IGZO (Indium Gallium Zinc Oxide, Indium Gallium Zinc Oxide).
  • the metal with high reflectance may be Ag, for example.
  • the light-emitting functional layer 132 includes a light-emitting layer 1321.
  • the light-emitting functional layer 132 in addition to the light-emitting layer 1321, also includes a hole injection layer (HIL), a hole transporting layer (HTL), and an electron transporting layer (HIL).
  • HIL hole injection layer
  • HTL hole transporting layer
  • HIL electron transporting layer
  • EIL electron injection layer
  • EIL electron injection layer
  • the display substrate 10 further includes a flat layer 17 disposed between the thin film transistor 121 and the pixel electrode 131 and a pixel defining layer 18 disposed on the side of the pixel electrode 131 away from the base substrate 11.
  • the pixel defining layer 18 includes a plurality of opening areas, and retaining walls arranged around each opening area.
  • One light emitting device 13 is arranged in an opening area.
  • the pixel electrode 131 and the light emitting layer 1321 of the adjacent light emitting device 13 are separated by the barrier of the pixel defining layer 18.
  • the common electrode 133 of each light emitting device 13 is connected as a whole, that is, the common The electrode 133 is a whole layer.
  • these film layers may be disconnected, that is, only provided in the opening area; or, these The film layer can be a whole layer.
  • the display substrate 10 further includes an encapsulation layer 16 for encapsulating a plurality of light emitting devices 13.
  • the packaging layer 16 may be a packaging film or a packaging substrate.
  • the number of layers of the encapsulation film included in the encapsulation layer 16 is not limited.
  • the encapsulation layer 16 may include a layer of encapsulation film, or may include two or more layers of encapsulation films arranged in a stack.
  • the packaging layer 16 includes three layers of packaging films stacked in sequence.
  • the material of the encapsulation film in the middle layer is an organic material
  • the material of the encapsulation film on both sides is an inorganic material.
  • the organic material is not limited, and the organic material may be PMMA (Polymethyl methacrylate), for example.
  • the inorganic material is not limited.
  • the inorganic material may be one or more of SiNx (silicon nitride), SiOx (silicon oxide), or SiOxNy (silicon oxynitride).
  • the display panel has problems such as uneven brightness due to aging of the light-emitting layer. Therefore, it is necessary to detect the luminous intensity of the display panel in real time, so as to compensate its luminous intensity by means of internal compensation or external compensation, so that the brightness of the display screen of the display panel is uniform throughout.
  • the display panel 1 is a bottom-emitting display panel, and its display direction is the direction indicated by the arrow A.
  • the display substrate 10 further includes a light detecting layer 15 arranged on the side of the light emitting device 13 away from the base substrate 11, and the light detecting layer 15 is configured to detect the luminous intensity of the light emitting device 13. .
  • the light detecting layer 15 includes at least one light detector 151 arranged in a one-to-one correspondence with the at least one light emitting layer 1321, and the at least one light detector 151 is configured to detect the luminous intensity of the corresponding light emitting layer 1321.
  • the light detecting layer 15 includes a light detector 151 corresponding to a light emitting layer 1321 to detect the luminous intensity of the light emitting layer 1321.
  • the photodetecting layer 15 includes a plurality of photodetectors 151, and the plurality of photodetectors 151 are in one-to-one correspondence with the plurality of light-emitting layers 1321 to detect the luminous intensity of the corresponding light-emitting layer 1321.
  • the photodetector 151 includes a photosensitive device 1511 and a thin film transistor 1512 connected to the photosensitive device 1511.
  • the thin film transistor 1512 is, for example, an amorphous silicon thin film transistor.
  • the photosensitive device 1511 is used to convert the detected light signal into an electric signal.
  • the performance of the amorphous silicon thin film transistor is relatively balanced and the response speed is good.
  • the use of the amorphous silicon thin film transistor is convenient for quickly reading the electric signal converted by the photosensitive device 1511.
  • the photosensitive device 1511 of the photodetector 151 includes a transparent first electrode and a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode, and the photoelectric conversion layer is configured to absorb The light is converted into electricity.
  • the photoelectric conversion layer includes a P-type semiconductor layer, a semiconductor layer, and an N-type semiconductor layer that are stacked.
  • the first electrode of the photosensitive device 1511 is connected to the common power line
  • the second electrode is connected to the source of the thin film transistor 1512
  • the gate of the thin film transistor 1512 is connected to the gate line
  • the thin film transistor 1512 is connected to the gate line.
  • the drain of 1512 is connected to the read signal line.
  • the working principle of the photodetector 151 is: when the light emitted by the light-emitting layer 1321 irradiates the semiconductor layer, the electrons in the semiconductor are released due to the light energy, and correspondingly, electron-hole pairs are generated. The hole pairs are called photo-generated carriers. Under the action of the reverse bias voltage, electrons are driven to the N-type region, and holes are driven to the P-type region, making the reverse current increase significantly. The greater the intensity of light, the greater the reverse current.
  • the thin film transistor 1512 is turned on by the gate voltage applied to the gate line, and the electrical signal generated in the photosensitive device 1511 is output to the detection chip through the read signal line.
  • the common electrode 133 corresponds to at least one photodetector 151
  • the light transmittance of the part is about 5%.
  • the common electrode 133 includes at least one light through hole 1331 corresponding to the at least one photodetector 151 in a one-to-one manner.
  • the number of at least one photodetector 151 is one.
  • the common electrode 133 includes a light-passing hole 1331, and the light-passing hole corresponds to the photodetector 151.
  • the number of at least one photodetector 151 is multiple.
  • the common electrode 133 includes a plurality of light-passing holes 1331, and the plurality of light-passing holes 1331 corresponds to the plurality of photodetectors 151 one-to-one.
  • the area of a light-passing hole 1331 occupies 4% to 6% of the surface area of the part of the common electrode 133 corresponding to the photodetector 151, so that the common electrode 133 can transmit light; or, the common electrode 133 is thinned to achieve The common electrode 133 can transmit light.
  • the photodetector 151 receives the light emitted by the corresponding luminescent layer 1321 through the light hole or the thinned common electrode 133, so that the photodetector 151 can detect the light emitted by the corresponding luminescent layer 1321.
  • the display substrate 10 further includes an adhesive layer 14.
  • the plurality of light emitting devices 13 and the light detection layer 15 are connected by the adhesive layer 14.
  • the material of the adhesive layer 14 is preferably a transparent optical glue.
  • the display structure layer (including the pixel circuit 12 and the light emitting device 13) and the light detection layer 15 can be separately prepared.
  • the display structure layer is made on the basis of the base substrate 11, and the light detection layer 15 is made on the basis of the encapsulation layer 16.
  • the base substrate 11 may be used as the basis to prepare the display structure layer first and then prepare the light detection layer 15.
  • the display substrate 10 further includes an insulating layer disposed between the plurality of light-emitting devices 13 and the light detection layer. , Replace the adhesive layer 14 with the insulating layer.
  • the material of the insulating layer is not limited, as long as it is transparent and can allow the light emitted by the light emitting device 13 to pass through and be incident on the light detecting layer 15.
  • the encapsulation layer 16 is used as the mounting carrier for the light detection layer 15 and the base substrate 11 is used as the mounting carrier for the pixel circuit 12 and the light emitting device 13.
  • the process of forming the pixel circuit 12 and the light-emitting device 13 on the base substrate 11 and the process of forming the photodetection layer 15 on the encapsulation layer 16 may be different, so that the design solution of the pixel circuit 12 with smaller leakage current can be adopted, and There is no need to consider the process of forming the photodetection layer 15 at the same time.
  • the display panel 1 is a top-emitting display panel, and the display direction thereof is the direction indicated by the arrow B.
  • the display substrate 10 further includes a light detection layer 15 disposed between the plurality of pixel circuits 12 and the plurality of pixel electrodes 131, and the light detection layer 15 is configured to detect the light emitting device 13 The luminous intensity.
  • the light detection layer 15 is different from the light detection layer 15 in the above-mentioned embodiment only in the disposition position, and its structure is the same, which will not be repeated here.
  • the display substrate 10 further includes an insulating layer 19 disposed between the photodetection layer 15 and the plurality of pixel electrodes 131.
  • the material of the insulating layer 19 It is not limited, as long as it is transparent and can make the light emitted by the light emitting device 13 pass and enter the light detection layer 15.
  • the photodetector 151 can detect the luminous intensity of the light-emitting layer 1321.
  • the light transmittance of at least one pixel electrode corresponding to one photodetector 151 is about 5%.
  • the number of at least one photodetector 151 is one. At this time, the light transmittance of the pixel electrode 131 corresponding to the photodetector 151 is about 5%. In some other embodiments, the number of at least one photodetector 151 is multiple. In this case, the light transmittance of the plurality of pixel electrodes 131 corresponding to the multiple photodetectors 151 one-to-one is about 5%.
  • the pixel electrode 131 corresponding to the photodetector 151 includes a light-passing hole 1311, and the area of one light-passing hole 1311 occupies 4% to 6% of the surface area of the corresponding pixel electrode 131 to realize the pixel electrode 131 It can transmit light; or, the pixel electrode 131 is thinned, so that the pixel electrode 131 can transmit light.
  • the photodetector 151 receives the light emitted by the corresponding light-emitting layer 1321 through the light hole or the thinned pixel electrode 131, so that the photodetector 151 can detect the light emitted by the corresponding light-emitting layer 1321.
  • the incident angle of the light is approximately within the range of ⁇ 70°. A part of the light passes through the transparent cover 20 and enters the external environment. Light with an incident angle greater than 40°) will be totally reflected at the interface between the transparent cover 20 and the external environment.
  • the current photodetector 151 detects the luminous intensity of the corresponding current light-emitting layer 1321, after a part of the light emitted by the light-emitting layer 1321 adjacent to the current light-emitting layer 1321 is totally reflected, it may be incident on the current photodetector 151, thereby causing crosstalk, which affects the detection of the luminous intensity of the current luminescent layer 1321.
  • the display panel 1 provided by some embodiments of the present disclosure further includes a polarizing plate 30 and a first quarter that are located between the display substrate 10 and the transparent cover 20 and are stacked in sequence.
  • the polarizing plate 30 cooperates with the first quarter wave plate 40 to eliminate the light totally reflected at the transparent cover plate 20.
  • 4A and 4B of some embodiments of the present disclosure only exemplarily show the display panel 1, and the actual structure of the display panel 1 is not limited to the examples shown in FIGS. 4A and 4B.
  • the optical axis of the first quarter wave plate 40 can be understood with reference to the above.
  • the above-mentioned polarizer 30 only allows light whose polarization direction is parallel to the transmission axis of the polarizer 30 to pass through, while filtering out light that vibrates perpendicular to the transmission axis, where the transmission axis may also be referred to as the polarization axis.
  • the optical axis of the first quarter-wave plate 40 and the transmission axis of the polarizer 30 form an angle of 45°.
  • the first quarter-wave plate 40 may be referred to as a ⁇ /4 wave plate.
  • the light emitted by the light-emitting layer 1321 becomes first linearly polarized light after passing through the polarizer 30, and the first linearly polarized light passes through the first quarter wave plate 40 and then turns into a left-handed (or right-handed) circle.
  • Polarized light (for the convenience of description, the left-handed circularly polarized light is taken as an example for illustration); after the above-mentioned left-handed circularly polarized light is reflected at the interface between the transparent cover 20 and the external environment, its phase changes by ⁇ , and the polarization state becomes ⁇ /2 Change into right-handed circularly polarized light; after this right-handed circularly polarized light passes through the first quarter-wave plate 40, it is transformed into the first quarter-wave plate 40 that is -45° with the optical axis of the first quarter-wave plate 40.
  • the angle between the polarization directions of the second linearly polarized light and the first linearly polarized light is 90°; and the polarization direction of the first linearly polarized light is parallel to the transmission axis of the polarizer 30, that is, the second linearly polarized light
  • the polarization direction is perpendicular to the transmission axis of the polarizer 30; as a result, the second linearly polarized light cannot be emitted from the polarizer 30, and the light that is fully emitted at the junction of the transparent cover 20 and the external environment is eliminated and will not enter
  • the light detection layer 15 prevents crosstalk from detecting the luminous intensity of the light-emitting layer 1321, so that the light detection layer 15 can detect the luminous intensity of the light-emitting layer 1321 more accurately.
  • light-reflecting structures in the display panel 1, such as gate lines, data lines, common power lines, gate metal layers and source-drain metal layers of the thin film transistor 121 included in the pixel circuit 12, and so on.
  • these reflective structures When ambient light enters the interior of the display panel 1 from the outside, these reflective structures will reflect the incident ambient light so that this part of the ambient light exits the display panel 1 and enters human eyes, which affects the display effect of the display panel 1.
  • the display panel 1 further includes a second quarter wave plate 50 disposed between the display substrate 10 and the polarizing plate 30, the second quarter wave plate 50 and the polarizing plate 30
  • the combination of the sheet 30 can prevent the incident ambient light from being reflected to the outside by the light reflecting structure in the display panel 1.
  • optical axis of the second quarter-wave plate 50 can be understood with reference to the above, and will not be repeated here.
  • the optical axis of the second quarter-wave plate 50 and the transmission axis of the polarizer 30 form an angle of 45°.
  • the second quarter-wave plate 50 may be referred to as a ⁇ /4 wave plate.
  • the third linearly polarized light passes through the second quarter wave plate.
  • the one-half wave plate 50 becomes left-handed (or right-handed) circularly polarized light (for convenience of description, the left-handed circularly polarized light is taken as an example for illustration); after the left-handed circularly polarized light is reflected by the metal layer in the pixel circuit, Its phase changes by ⁇ , the polarization state changes ⁇ /2, and it is converted into right-handed circularly polarized light; after this right-handed circularly polarized light passes through the second quarter wave plate 50, it is converted into a second quarter wave
  • the light transmission axis is parallel, that is, the polarization direction of the fourth linearly polarized light is perpendicular to the light transmission axis
  • the second quarter-wave plate 50 does not affect the processing of the light emitted by the light-emitting layer 1321 by the display panel 1.
  • the top emission type display panel 1 may also include the second quarter wave plate.
  • a one-wave plate 50 and the second quarter-wave plate 50 are also located between the display substrate 10 and the polarizing plate 30 in the top-emission display panel 1.
  • the first quarter-wave plate 40 and the polarizer 30 are arranged oppositely to eliminate the light emitted by the light-emitting layer 1321 that is totally reflected when entering the air, and prevent this part of the light from being totally reflected.
  • the second quarter-wave plate 50 and the polarizer 30 arranged oppositely eliminate the ambient light entering the display panel from the outside, so that the light emitted by the light-emitting layer 1321 is not cross-talked by the ambient light. Avoid affecting the display effect of the display panel.
  • Some embodiments of the present disclosure also provide a display device, which includes the above-mentioned display panel 1, and the beneficial effects of the display device are the same as the beneficial effects of the display panel 1, and will not be repeated here.
  • Some embodiments of the present disclosure also provide a method for manufacturing the above-mentioned display panel.
  • a plurality of pixel circuits 12 and a plurality of light-emitting devices 13 are sequentially formed on one side of the base substrate 11.
  • the plurality of pixel circuits 12 and the plurality of light-emitting devices 13 are called Display structure layer; on the side of the base substrate 11 away from the display structure layer, the polarizer 30 and the first quarter-wave plate 40 are sequentially bonded by glue, and the first quarter-wave plate 40 is away from the base substrate
  • One side of 11 is glued to the transparent cover 20; on the side of the encapsulation layer 16 is glued to the light detection layer 15, and the display structure layer and the light detection layer 15 are relatively bonded through the glue to make the display
  • Each light-emitting device 13 in the structure layer is positioned opposite to the corresponding photodetector 151 in the photodetection layer 15.
  • the glue used for bonding the display structure layer and the photodetection layer 15 is formed between the display structure layer and the photodetection layer 15.
  • a plurality of pixel circuits 12, a photodetection layer 15, a plurality of light-emitting devices 13, and an encapsulation layer 16 are sequentially formed on one side of the base substrate 11.
  • the photodetection layer The light detector 151 in 15 is positioned opposite to the corresponding light emitting device 13.
  • the polarizer 30 and the first quarter-wave plate 40 are sequentially bonded by glue on the side of the encapsulation layer 16 away from the display structure layer, and the side of the first quarter-wave plate 40 away from the base substrate 11 is passed through The glue material adheres to the transparent cover plate 20.
  • the glue material is a transparent optical glue.
  • the encapsulation layer 16 away from the display structure layer is bonded to the second quarter wave plate 50 by glue.
  • the glue material is a transparent optical glue.
  • the combination of the first quarter wave plate 40 and the polarizing plate 30 may be referred to as an extinction device.
  • the combination of the first quarter-wave plate 40, the polarizing plate 30, and the second quarter-wave plate 50 is referred to as an extinction device.
  • the encapsulation layer 16 is used as the carrying carrier of the light detection layer 15, and the base substrate 11 is used as the carrying carrier of the pixel circuit 12 and the light emitting device 13, and light detection is used.
  • the layer 15 detects the intensity of the light emitted by the light-emitting layer 1321.
  • the process of forming the pixel circuit 12 and the light-emitting device 13 on the base substrate 11 and the process of forming the photodetection layer 15 on the encapsulation layer 16 may be different, so that the design solution of the pixel circuit 12 with smaller leakage current can be adopted, and There is no need to consider the process of forming the photodetection layer 15 at the same time.

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Abstract

一种显示面板，包括显示基板，包括：衬底基板；设置在衬底基板上的显示结构层；其中，显示结构层包括依次层叠设置在衬底基板上的多个像素电路和多个发光器件，像素电路与相应的发光器件电连接，以驱动发光器件发光；位于发光器件的非出光侧的光探测层，光探测层被配置为检测发光器件的发光强度；位于发光器件的出光侧的透明盖板，发光器件的非出光侧与发光器件的出光侧相对；位于显示基板和透明盖板之间且依次层叠设置的偏振片和第一四分之一波片，偏振片比第一四分之一波片更靠近显示基板。

Description

显示面板及其制备方法、显示装置
本申请要求于2020年2月24日提交的、申请号为202010112467.0的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种显示面板及其制备方法、显示装置。
背景技术
有机发光二极管(organic light-emitting diode，OLED)显示面板具有自发光、低能耗、轻薄、高色彩饱和度等优点，广泛应用于包括电脑、手机等电子产品在内的各种电子设备中。
发明内容
一方面，提供一种显示面板。所述显示面板包括：显示基板，包括：衬底基板；设置在所述衬底基板上的显示结构层；其中，所述显示结构层包括依次层叠设置在所述衬底基板上的多个像素电路和多个发光器件，像素电路与相应的发光器件电连接，以驱动所述发光器件发光；位于发光器件的非出光侧的光探测层，所述光探测层被配置为检测所述发光器件的发光强度；位于所述发光器件的出光侧的透明盖板，所述发光器件的非出光侧与所述发光器件的出光侧相对；位于所述显示基板和所述透明盖板之间且依次层叠设置的偏振片和第一四分之一波片，所述偏振片比所述第一四分之一波片更靠近所述显示基板。
在一些实施例中，所述第一四分之一波片的光轴与所述偏振片的透光轴之间大致呈45°夹角。
在一些实施例中，所述显示面板还包括位于所述显示基板和所述偏振片之间的第二四分之一波片。
在一些实施例中，所述第二四分之一波片的光轴与所述偏振片的透光轴之间的夹角大致为45°。
在一些实施例中，发光器件包括像素电极、发光层以及公共电极；所述光探测层包括与至少一个发光层一一对应设置的至少一个光探测器；所述公共电极与所述至少一个光探测器对应的部分的透光率约为5％。
在一些实施例中，公共电极包括至少一个通光孔，所述至少一个通光孔与所述至少一个光探测器一一对应，一个通光孔的面积占所述公共电极与一个光探测器对应的部分的表面面积的4％～6％。
在一些实施例中，所述公共电极经过减薄处理实现所述公共电极可透光。
在一些实施例中，发光器件包括像素电极、发光层以及公共电极；所述光探测层包括与至少一个发光层一一对应设置的至少一个光探测器；与所述至少一个光探测器对应的像素电极的透光率约为5％。
在一些实施例中，与所述至少一个光探测器对应的像素电极包括通光孔，一个通光孔的面积占相应的像素电极表面面积的4％～6％。
在一些实施例中，至少一个像素电极经过减薄处理实现所述至少一个像素电极可透光。
在一些实施例中，每个像素电路包括多个薄膜晶体管，所述薄膜晶体管为金属氧化物薄膜晶体管。
在一些实施例中，所述光探测层包括至少一个光探测器，每个光探测器包括感光器件和与所述感光器件相连的薄膜晶体管，所述薄膜晶体管为非晶硅薄膜晶体管。
在一些实施例中，所述感光器件包括透明的第一电极和第二电极、以及设置在所述第一电极和所述第二电极之间的光电转化层，所述光电转化层被配置为将吸收的光转化为电能。
在一些实施例中，所述感光器件的第一电极与公共电源线连接，第二电极与所述薄膜晶体管的源极连接，所述薄膜晶体管的栅极与栅线连接，所述薄膜晶体管的漏极与读取信号线连接；所述栅线沿着一个方向配置所述衬底基板上，与所述栅线绝缘交叉的数据线以及公共电源线沿着另一个方向配置在所述衬底基板上，所述公共电源线与数所述据线平行；交叉设置的栅线和数据线定义出多个子像素，每个子像素具有一个像素电路和一个发光器件。
在一些实施例中，所述显示结构层与所述光探测层之间通过粘接层连接。
另一方面，提供一种显示装置。所述显示装置包括如上述实施例所述的显示面板。
又一方面，提供一种制作如上述实施例所述的显示面板的制备方法。所述制备方法包括：在所述衬底基板的一侧形成所述显示结构层，在所述衬底基板背离所述显示结构层的一侧通过胶材依次粘接所述偏振片、所述第一四分之一波片和所述透明盖板；在所述显示结构层背离所述衬底基板的一侧通过胶材粘接光探测层。
在一些实施例中，在所述衬底基板背离所述显示结构层的一侧通过胶材依次粘接所述偏振片、所述第一四分之一波片和所述透明盖板之前， 在所述衬底基板背离所述显示结构层的一侧通过胶材粘接第二四分之一波片。
又一方面，提供一种制作如上述实施例所述的显示面板的制备方法。所述制备方法包括：在所述衬底基板的一侧依次形成多个像素电路、所述光探测层和多个发光器件，所述多个像素电路和所述多个发光器件构成所述显示结构层；在所述多个发光器件背离所述衬底基板的一侧通过胶材依次粘接所述偏振片、所述第一四分之一波片和所述透明盖板。
在一些实施例中，在所述多个发光器件背离所述衬底基板的一侧通过胶材依次粘接所述偏振片、所述第一四分之一波片和所述透明盖板之前，在所述多个发光器件背离所述衬底基板的一侧通过胶材粘接第二四分之一波片。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1为根据一些实施例的一种显示面板的结构示意图；
图2为根据一些实施例的一种显示基板的结构示意图；
图3为根据一些实施例的另一种显示基板的结构示意图；
图4A为根据一些实施例的另一种显示面板的结构示意图；
图4B为根据一些实施例的又一种显示面板的结构示意图；
图5为根据一些实施例的又一种显示面板的结构示意图；
图6为根据一些实施例的感光器件与薄膜晶体管的电路示意图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)” 和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在描述一些实施例时，可能使用了“耦接”和“连接”及其衍伸的表达。例如，描述一些实施例时可能使用了术语“连接”以表明两个或两个以上部件彼此间有直接物理接触或电接触。又如，描述一些实施例时可能使用了术语“耦接”以表明两个或两个以上部件有直接物理接触或电接触。然而，术语“耦接”或“通信耦合(communicatively coupled)”也可能指两个或两个以上部件彼此间并无直接接触，但仍彼此协作或相互作用。这里所公开的实施例并不必然限制于本文内容。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
本文中“适用于”或“被配置为”的使用意味着开放和包容性的语言，其不排除适用于或被配置为执行额外任务或步骤的设备。
如本文所使用的那样，“约”、“大致”或“近似”包括所阐述的值以及处于特定值的可接受偏差范围内的平均值，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。
本公开一些实施例提供一种显示面板1，如图1所示，显示面板1包括显示基板10、位于显示基板10的出光侧的透明盖板20。
在一些实施例中，透明盖板20用于保护显示基板10包括的膜层，例如发光层1321；或者，保护显示基板10的衬底基板11。
上述显示面板1可以是有机电致发光显示面板(Organic Light-Emitting  Diode Display，简称OLED)，也可以是量子点电致发光显示面板(Quantum Dot Light Emitting Diodes Display，简称QLED)。
如图1～3所示，显示基板10包括衬底基板11、依次设置在衬底基板11上的多个像素电路12和多个发光器件13。
需要说明的是，可以将多个像素电路12和多个发光器件13称为显示结构层。
显示基板10还包括在衬底基板11上沿着一方向配置的栅线、与栅线绝缘交叉的数据线以及公共电源线，公共电源线一般与数据线平行。可以以交叉设置的栅线和数据线(以及公共电源线)定义多个子像素。每个子像素具有一个像素电路12和一个发光器件13，像素电路12与发光器件13电连接，用以驱动发光器件13发光。
像素电路12包括多个薄膜晶体管121和至少一个电容器，各个薄膜晶体管121可以采用顶栅或者底栅结构。如图2所示，薄膜晶体管121为顶栅结构时，包括依次设置在衬底基板11上的有源层AL、栅极绝缘层GI、栅金属层GM(形成栅极1211)、层间介质层ILD、源漏金属层SD(形成源极1212和漏极1213)。如图3所示，薄膜晶体管121为底栅结构时，其包括依次设置在衬底基板11上的栅金属层GM(形成栅极1211)、栅极绝缘层GI、有源层AL、源漏金属层SD(形成源极1212和漏极1213)。
薄膜晶体管121的有源层AL可以由非晶硅、单晶硅、多晶硅或氧化物半导体构成。有源层AL包括未掺杂有杂质的沟道区和沟道区的两边通过掺杂杂质形成的源区域以及漏区域。所掺杂的杂质随着薄膜晶体管种类而不同，可以为N型杂质或P型杂质。
电容器(图2和图3中未示出)包括第一极板和第二极板，两个极板之间设置有作为电介质的层间绝缘膜。
下面以一个像素电路包括两个薄膜晶体管(即，开关薄膜晶体管、驱动薄膜晶体管)和一个电容器的2T1C结构为例，来说明像素电路内部和外部的电连接关系。虽然图2和图3仅显示了驱动薄膜晶体管(如图2和图3虚线圈中的结构)和发光器件13的结构及连接关系，但根据上下文的描述，本领域技术人员完全可以确定开关晶体管的结构及其与其他零部件的连接关系。
开关薄膜晶体管的栅极1211与栅线连接，源极1212与数据线连接，漏极1213与驱动薄膜晶体管的栅极1211连接。驱动薄膜晶体管的栅极1211与开关薄膜晶体管的漏极1213连接，源极1212与公共电源线连接，漏极1213通过过孔与发光器件13的像素电极131连接。电容器的第一极板与驱动薄膜 晶体管的栅极1211连接，第二极板与驱动薄膜晶体管的源极1212连接。
通过施加到栅线的栅极电压使开关薄膜晶体管打开，从而将施加到数据线的数据电压传输到驱动薄膜晶体管。由开关薄膜晶体管传输到驱动薄膜晶体管的数据电压和从公共电源线施加到驱动薄膜晶体管的公共电压之间具有一定的差，与该差的绝对值相当的电压被储存于电容器，与储存于电容器的电压对应的电流通过驱动薄膜晶体管流入发光器件13从而使得发光器件13发光。
如图2和图3所示，一个发光器件13包括依次层叠设置的像素电极131、发光功能层132以及公共电极133，像素电极131和公共电极133中的一个为阳极(用于提供空穴)，另一个为阴极(用于提供电子)，像素电极131和公共电极133各自向发光功能层132分别注入空穴和电子，当空穴和电子结合产生的激子(exciton)从激发态跃迁到基态时构成发光。
像素电极131可以由反射率高的金属形成，公共电极133可以由透明的导电膜形成。这种情况下，发光功能层132的光被像素电极131反射，通过公共电极123向外部射出，由此形成顶发光型发光器件。但并不局限于此，当像素电极131由透明的导电膜形成，而公共电极133由反射率高的金属形成时，可以形成底发光型发光器件。当然，当像素电极131和公共电极133均由透明的导电膜形成时，可以形成双面发光型发光器件。
其中，透明导电膜的材料例如可以为ITO(Indium Tin Oxide，氧化铟锡)、IZO(Indium Zinc Oxide，氧化铟锌)或IGZO(Indium Gallium Zinc Oxide，铟镓锌氧化物)等。反射率高的金属例如可以是Ag。
在一些实施例中，发光功能层132包括发光层1321。在另一些实施例中，发光功能层132除包括发光层1321外，还包括空穴注入层(hole injection layer，HIL)、空穴传输层(hole transporting layer，HTL)、电子传输层(electron transporting layer，ETL)和电子注入层(electron injection layer，EIL)中的至少一个。当包括以上所有的层时，在作为阳极的像素电极131上，依次层叠空穴注入层、空穴传输层、发光层1321、电子传输层和电子注入层。
显示基板10还包括设置在薄膜晶体管121和像素电极131之间的平坦层17，以及设置在像素电极131远离衬底基板11一侧的像素界定层18。像素界定层18包括多个开口区，以及围绕各个开口区设置的挡墙。一个发光器件13设置在一个开口区中，相邻发光器件13的像素电极131和发光层1321被像素界定层18的挡墙分隔开，各发光器件13的公共电极133连为一体，即公共电极133为一整层。
在发光器件13包括空穴注入层、空穴传输层、电子传输层和电子注入层中的至少一个的情况下，这些膜层可以是断开的，即仅设置在开口区中；或者，这些膜层可以为一整层。
在一些实施例中，显示基板10还包括用于封装多个发光器件13的封装层16。在一些实施例中，封装层16可以为封装薄膜，也可以为封装基板。
在封装层16为封装薄膜的情况下，对于封装层16包括的封装薄膜的层数不进行限定。在一些实施例中，封装层16可以包括一层封装薄膜，也可以包括层叠设置的两层或两层以上封装薄膜。示例地，封装层16包括依次层叠设置的三层封装薄膜。
在封装层16包括依次层叠设置的三层封装薄膜的情况下，位于中间层的封装薄膜的材料为有机材料，位于两侧的封装薄膜的材料为无机材料。
在本公开一些实施例中，对于有机材料不进行限定，有机材料例如可以为PMMA(Polymethyl methacrylate，聚甲基丙烯酸甲酯)。同样地，对于无机材料不进行限定，示例的，无机材料可以为SiNx(氮化硅)、SiOx(氧化硅)或SiOxNy(氮氧化硅)中的一种或多种。
显示面板由于发光层的老化等，会产生亮度不均一等问题。因此，需要对显示面板的发光强度进行实时检测，以便采用内部补偿或者外部补偿的方式对其发光强度进行补偿，使得显示面板的显示画面各处亮度均一。
在一些实施例中，如图4A所示，显示面板1为底发光型的显示面板，其显示方向为箭头A所指的方向。为了实现对显示面板1的发光强度的实时检测，显示基板10还包括设置在发光器件13远离衬底基板11一侧的光探测层15，光探测层15被配置为检测发光器件13的发光强度。
光探测层15包括与至少一个发光层1321一一对应设置的至少一个光探测器151，至少一个光探测器151被配置为检测对应的发光层1321的发光强度。
在一些实施例中，光探测层15包括一个光探测器151，该光探测器151与一发光层1321对应，以检测该发光层1321的发光强度。
在一些实施例中，光探测层15包括多个光探测器151，多个光探测器151与多个发光层1321一一对应，以检测对应的发光层1321的发光强度。
在一些实施例中，如图6所示，光探测器151包括感光器件1511和与感光器件1511相连的薄膜晶体管1512，该薄膜晶体管1512例如为非晶硅薄膜晶体管。感光器件1511用于将探测到的光信号转换为电信号， 非晶硅薄膜晶体管的各项性能较为均衡、响应速度良好，利用非晶硅薄膜晶体管便于快速读出感光器件1511转换的电信号。
在一些实施例中，光探测器151的感光器件1511包括透明的第一电极和第二电极、以及设置在第一电极和第二电极之间的光电转化层，光电转化层被配置为将吸收的光转化为电能。
在一些实施例中，光电转化层包括层叠设置的P型半导体层、半导体层和N型半导体层。
在一些实施例中，如图6所示，感光器件1511的第一电极与公共电源线连接，第二电极与薄膜晶体管1512的源极连接，薄膜晶体管1512的栅极与栅线连接，薄膜晶体管1512的漏极与读取信号线连接。
光探测器151的工作原理为：当发光层1321发出的光照射到半导体层时，半导体内的电子由于获得了光能而被释放，相应地便产生了电子-空穴对，该电子-空穴对被称为光生载流子。在反向偏置电压的作用下，电子被驱向N型区，空穴被驱向P型区，使得反向电流明显增大。光的强度越大，反向电流也越大。通过施加到栅线的栅极电压使薄膜晶体管1512打开，感光器件1511中产生的电信号通过读取信号线输出至检测芯片。
为了使发光层1321发出的光透过公共电极133入射至对应的光探测器151，从而使得光探测器151能够检测发光层1321的发光强度，公共电极133中与至少一个光探测器151对应的部分的透光率约为5％。
在一些实施例中，如图4A所示，公共电极133包括与至少一个光探测器151一一对应的至少一个通光孔1331。示例地，至少一个光探测器151的数量为一个，此时，公共电极133包括一个通光孔1331，该通光孔与该光探测器151对应。示例地，至少一个光探测器151的数量为多个，此时，公共电极133包括多个通光孔1331，该多个通光孔1331与多个光探测器151一一对应。一个通光孔1331的面积占公共电极133中与一个光探测器151对应的部分的表面面积的4％～6％，实现公共电极133可透光；或者，公共电极133经过减薄处理，实现公共电极133可透光。这样，光探测器151通过通光孔或者减薄处理后的公共电极133接收到对应的发光层1321发出的光，从而光探测器151能够对对应的发光层1321发出的光进行探测。
在一些实施例中，显示基板10还包括粘接层14，多个发光器件13与光探测层15通过粘接层14连接，粘接层14的材料优选为透明光学胶。这样可以分别独立制备显示结构层(包括像素电路12和发光器件13) 和光探测层15，例如以衬底基板11为基础制作显示结构层，以封装层16为基础制作光探测层15。在另一些实施例中，也可以以衬底基板11为基础先制备显示结构层后制备光探测层15，例如，显示基板10还包括设置在多个发光器件13和光探测层之间的绝缘层，以该绝缘层代替粘接层14。对于绝缘层的材料不进行限定，只要其是透明的，能够使得发光器件13发出的光透过并入射至光探测层15即可。
本公开一些实施例分别独立制备显示结构层和光探测层15时，以封装层16作为光探测层15的搭载载体，以衬底基板11作为像素电路12和发光器件13的搭载载体。这样，在衬底基板11上形成像素电路12和发光器件13的工艺与在封装层16上形成光探测层15的工艺可以不同，从而可以采用漏电流较小的像素电路12的设计方案，而不需要同时考虑形成光探测层15的工艺。
在另一些实施例中，如图4B所示，显示面板1为顶发光型的显示面板，其显示方向为箭头B所指的方向。为了实现对显示面板1的发光强度的实时检测，显示基板10还包括设置在多个像素电路12和多个像素电极131之间的光探测层15，光探测层15被配置为检测发光器件13的发光强度。
光探测层15与上述实施例中的光探测层15仅设置位置不同，其结构是相同的，在此不在赘述。
容易理解的是，为了保证光探测层15和发光器件13均能够正常工作，显示基板10还包括设置在光探测层15和多个像素电极131之间的绝缘层19，对于绝缘层19的材料不进行限定，只要其是透明的，能够使得发光器件13发出的光透过入射至光探测层15即可。
在此基础上，为了使发光层1321发出的光透过像素电极131入射至对应的光探测器151，从而使得光探测器151能够检测发光层1321的发光强度，多个像素电极133中与至少一个光探测器151对应的至少一个像素电极的透光率约为5％。
在一些实施例中，至少一个光探测器151的数量为一个，此时，与该光探测器151对应的像素电极131的透光率约为5％。在另一些实施例中，至少一个光探测器151的数量为多个，此时，与该多个光探测器151一一对应的多个像素电极131的透光率均约为5％。
在一些实施例中，与光探测器151对应的像素电极131上包括通光孔1311，一个通光孔1311的面积占相应的一个像素电极131表面面积的4％～6％，实现像素电极131可透光；或者，像素电极131经过减薄处 理，实现像素电极131可透光。这样，光探测器151通过通光孔或者减薄处理后的像素电极131接收到对应的发光层1321发出的光，从而光探测器151能够对对应的发光层1321发出的光进行探测。
光由光密介质(玻璃)进入到光疏介质(空气)的过程中，入射角大于某一临界角的光会产生全反射。因此，发光层1321发出的光由透明盖板20进入外部环境的过程中，光的入射角度大概在±70°范围内，一部分光经过透明盖板20射到外部环境中，其余光(例如，入射角度大于40°的光)会在透明盖板20与外界环境的交界面处发生全反射。在当前光探测器151检测对应的当前发光层1321的发光强度的过程中，与该当前发光层1321相邻的发光层1321发出的光一部分发生全反射后，可能会入射至该当前光探测器151，从而造成串扰，影响该当前发光层1321的发光强度的检测。
为此，如图4A～4B所示，本公开一些实施例提供的显示面板1还包括位于显示基板10和透明盖板20之间，且依次层叠设置的偏振片30和第一四分之一波片40。偏振片30与第一四分之一波片40相配合用于消除在透明盖板20处发生全反射的光。本公开一些实施例的图4A和图4B仅示例性地表示该显示面板1，实际的显示面板1的结构并不局限于图4A和图4B的示例。
在介绍如何消除在透明盖板20处发生全反射的光之前，下面说明光轴的概念。当一束光入射到某种晶体时，会产生两束折射光，这种现象称为双折射。其中，两束折射光中的一束遵守通常的折射定律，这一折射光称为寻常光，简称o光；但另一束折射光不遵守折射定律，这一折射光称为非常光，简称e光。当旋转晶体时，寻常光的折射方向不变，而非常光的折射方向随着旋转的方向发生改变；当旋转晶体至某一方向时，寻常光的折射方向与非寻常光的折射方向重合，把该方向称为晶体的光轴。上述第一四分之一波片40的光轴可参照上述理解。
上述偏振片30只允许偏振方向平行于该偏振片30的透光轴的光通过，同时过滤掉垂直于该透光轴方向振动的光，这里透光轴也可称为偏光轴。
第一四分之一波片40的光轴与偏振片30的透光轴之间呈45°夹角，第一四分之一波片40可称为λ/4波片。
参照图4，发光层1321发出的光经过偏振片30后变成第一线偏振光，该第一线偏振光经过第一四分之一波片40后，转变为左旋(或右旋) 圆偏振光(为方便描述，此处以左旋圆偏振光为例进行说明)；上述左旋圆偏振光经透明盖板20与外部环境的交界面处反射后，其相位变化π，偏振状态发生λ/2变化，转变为右旋圆偏振光；该右旋圆偏振光再经过第一四分之一波片40后，转变为与第一四分之一波片40的光轴成-45°的第二线偏振光，则第二线偏振光和第一线偏振光的偏振方向的夹角为90°；而第一线偏振光的偏振方向与偏振片30的透光轴平行，即第二线偏振光的偏振方向垂直于偏振片30的透光轴；其结果是，第二线偏振光无法从偏振片30射出，则在透明盖板20与外部环境的交界处发生全发射的光被消除，不会进入光探测层15，避免对发光层1321的发光强度的检测造成串扰，从而光探测层15能够更为准确地检测发光层1321的发光强度。
在显示面板1中存在很多反光结构，例如栅线、数据线、公共电源线、像素电路12包括的薄膜晶体管121的栅金属层和源漏金属层等。当环境光由外部入射至显示面板1的内部时，这些反光结构会对入射的环境光产生反射而使该部分的环境光射出显示面板1进入人眼，影响显示面板1的显示效果。
在一些实施例中，如图5所示，显示面板1还包括设置在显示基板10与偏振片30之间的第二四分之一波片50，第二四分之一波片50与偏振片30配合可以避免入射的环境光被显示面板1中的反光结构反射至外部。
第二四分之一波片50的光轴可参照上述理解，在此不再赘述。
第二四分之一波片50的光轴与偏振片30的透光轴之间呈45°夹角，第二四分之一波片50可称为λ/4波片。
环境光进入显示面板1中，经过第一四分之一波片40后的出射光依然是自然光，然后该自然光经过偏振片30后变成第三线偏振光，该第三线偏振光经过第二四分之一波片50后变成左旋(或右旋)圆偏振光(为方便描述，此处以左旋圆偏振光为例进行说明)；该左旋圆偏振光被像素电路中的金属层反射后，其相位变化π，偏振状态发生λ/2变化，转变为右旋圆偏振光；该右旋圆偏振光再经过第二四分之一波片50后，转变为与第二四分之一波片50的光轴成-45°的第四线偏振光，则第四线偏振光和第三线偏振光的偏振方向的夹角为90°，而第三线偏振光的偏振方向与偏振片30的透光轴平行，即第四线偏振光的偏振方向垂直于偏振片30的透光轴，则第四线偏振光无法从偏振片30射出，从而实现对 环境光的消光效果。
此外，由于自然光经过四分之一波片后的出射光依然是自然光，因此发光层1321发出的光(自然光)经过第二四分之一波片50后不受影响。也就是说，第二四分之一波片50不会影响显示面板1对发光层1321发出的光的处理。
图5仅以在底发光型的显示面板1中包括第二四分之一波片50为例进行了说明，可以理解是，在顶发光型的显示面板1中也可以包括该第二四分之一波片50，并且该第二四分之一波片50在顶发光型的显示面板1中也位于显示基板10与偏振片30之间。
本公开一些实施例的显示面板，通过相对设置的第一四分之一波片40和偏振片30，消除发光层1321发出的在进入空气时发生全反射的光，避免该部分光全反射后进入到光探测层15，使得光探测层15对发光层1321所发出的光的检测不受显示面板内部反射光的串扰，如此光探测层15能够更加准确地检测出发光层1321的发光强度，作为亮度补偿的依据；通过相对设置的第二四分之一波片50和偏振片30，消除从外部进入显示面板内的环境光，使得发光层1321所发出的光不受环境光的串扰，避免影响显示面板的显示效果。
本公开一些实施例还提供一种显示装置，该显示装置包括上述显示面板1，该显示装置的有益效果与显示面板1的有益效果相同，在此不再赘述。
本公开一些实施例还提供了上述显示面板的制备方法。针对底发光型的显示面板，在制作显示基板时，在衬底基板11的一侧依次形成多个像素电路12和多个发光器件13，将多个像素电路12和多个发光器件13称为显示结构层；在衬底基板11背离显示结构层的一侧通过胶材依次粘接偏振片30和第一四分之一波片40，在第一四分之一波片40背离衬底基板11的一侧通过胶材粘接透明盖板20；在封装层16的一侧通过胶材粘接光探测层15，通过胶材将显示结构层与光探测层15相对粘接，以使得显示结构层中的各发光器件13与光探测层15中相应的光探测器151位置相对，此时用于粘接显示结构层和光探测层15的胶材在显示结构层和光探测层15之间形成粘接层14，这样可以分别独立制备显示结构层和光探测层15；当然，也可以以衬底基板11为基础先制备显示结构层后制备光探测层15，例如，在多个发光器件13背离衬底基板的一侧依次形成绝缘层、光探测层15和封装层16，此时以绝缘层代替粘接层14。
针对顶发光型的显示面板，在制作显示基板时，在衬底基板11的一侧依次形成多个像素电路12、光探测层15、多个发光器件13和封装层16；其中，光探测层15中的光探测器151与相应的发光器件13位置相对。在封装层16背离显示结构层的一侧通过胶材依次粘接偏振片30和第一四分之一波片40，在第一四分之一波片40背离衬底基板11的一侧通过胶材粘接透明盖板20。
在一些实施例中，针对底发光型的显示面板，在衬底基板11背离显示结构层的一侧通过胶材依次粘接偏振片30和第一四分之一波片40之前，还可以在衬底基板11背离显示结构层的一侧通过胶材粘接第二四分之一波片50。且第一四分之一波片40、偏振片30和第二四分之一波片50两两之间通过胶材粘接。在一些实施例中，该胶材为透明光学胶。
在一些实施例中，针对顶发光型的显示面板，在封装层16背离显示结构层的一侧通过胶材依次粘接偏振片30和第一四分之一波片40之前，还可以在封装层16背离显示结构层的一侧通过胶材粘接第二四分之一波片50。且第一四分之一波片40、偏振片30和第二四分之一波片50两两之间通过胶材粘接。在一些实施例中，该胶材为透明光学胶。
第一四分之一波片40和偏振片30的组合可以被称为消光器件。或者，第一四分之一波片40、偏振片30和第二四分之一波片50的组合被称为消光器件。
本公开一些实施例分别独立制备显示结构层和光探测层15时，以封装层16作为光探测层15的搭载载体，以衬底基板11作为像素电路12和发光器件13的搭载载体，利用光探测层15对发光层1321所发出的光的强度进行检测。这样，在衬底基板11上形成像素电路12和发光器件13的工艺与在封装层16上形成光探测层15的工艺可以不同，从而可以采用漏电流较小的像素电路12的设计方案，而不需要同时考虑形成光探测层15的工艺。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (20)

  1. 一种显示面板，包括：
    显示基板，包括：
    衬底基板；
    设置在所述衬底基板上的显示结构层；其中，所述显示结构层包括依次层叠设置在所述衬底基板上的多个像素电路和多个发光器件，像素电路与相应的发光器件电连接，以驱动所述发光器件发光；
    位于发光器件的非出光侧的光探测层，所述光探测层被配置为检测所述发光器件的发光强度；
    位于所述发光器件的出光侧的透明盖板，所述发光器件的非出光侧与所述发光器件的出光侧相对；
    位于所述显示基板和所述透明盖板之间且依次层叠设置的偏振片和第一四分之一波片，所述偏振片比所述第一四分之一波片更靠近所述显示基板。
  2. 根据权利要求1所述的显示面板，其中，所述第一四分之一波片的光轴与所述偏振片的透光轴之间大致呈45°夹角。
  3. 根据权利要求1所述的显示面板，还包括位于所述显示基板和所述偏振片之间的第二四分之一波片。
  4. 根据权利要求3所述的显示面板，所述第二四分之一波片的光轴与所述偏振片的透光轴之间的夹角大致为45°。
  5. 根据权利要求1-4任一项所述的显示面板，其中，
    发光器件包括像素电极、发光层以及公共电极；
    所述光探测层包括与至少一个发光层一一对应设置的至少一个光探测器；
    所述公共电极与所述至少一个光探测器对应的部分的透光率约为5％。
  6. 根据权利要求5所述的显示面板，其中，公共电极包括至少一个通光孔，所述至少一个通光孔与所述至少一个光探测器一一对应，一个通光孔的面积占所述公共电极与一个光探测器对应的部分的表面面积的4％～6％。
  7. 根据权利要求5所述的显示面板，其中，所述公共电极经过减薄处理 实现所述公共电极可透光。
  8. 根据权利要求1-4任一项所述的显示面板，其中，
    发光器件包括像素电极、发光层以及公共电极；
    所述光探测层包括与至少一个发光层一一对应设置的至少一个光探测器；
    与所述至少一个光探测器对应的像素电极的透光率约为5％。
  9. 根据权利要求8所述的显示面板，其中，与所述至少一个光探测器对应的像素电极包括通光孔，一个通光孔的面积占相应的像素电极表面面积的4％～6％。
  10. 根据权利要求8所述的显示面板，其中，至少一个像素电极经过减薄处理实现所述至少一个像素电极可透光。
  11. 根据权利要求1所述的显示面板，其中，每个像素电路包括多个薄膜晶体管，所述薄膜晶体管为金属氧化物薄膜晶体管。
  12. 根据权利要求1所述的显示面板，其中，所述光探测层包括至少一个光探测器，每个光探测器包括感光器件和与所述感光器件相连的薄膜晶体管，所述薄膜晶体管为非晶硅薄膜晶体管。
  13. 根据权利要求12所述的显示面板，其中，所述感光器件包括透明的第一电极和第二电极、以及设置在所述第一电极和所述第二电极之间的光电转化层，所述光电转化层被配置为将吸收的光转化为电能。
  14. 根据权利要求13所述的显示面板，其中，所述感光器件的第一电极与公共电源线连接，第二电极与所述薄膜晶体管的源极连接，所述薄膜晶体管的栅极与栅线连接，所述薄膜晶体管的漏极与读取信号线连接；
    所述栅线沿着一个方向配置所述衬底基板上，与所述栅线绝缘交叉的数据线以及公共电源线沿着另一个方向配置在所述衬底基板上，所述公共电源线与数所述据线平行；
    交叉设置的栅线和数据线定义出多个子像素，每个子像素具有一个像素 电路和一个发光器件。
  15. 根据权利要求1所述的显示面板，其中，所述显示结构层与所述光探测层之间通过粘接层连接。
  16. 一种显示装置，包括：如上述权利要求1-15任一项所述的显示面板。
  17. 一种制作如权利要求5所述的显示面板的制备方法，包括：
    在所述衬底基板的一侧形成所述显示结构层，在所述衬底基板背离所述显示结构层的一侧通过胶材依次粘接所述偏振片、所述第一四分之一波片和所述透明盖板；
    在所述显示结构层背离所述衬底基板的一侧通过胶材粘接光探测层。
  18. 根据权利要求17所述的显示面板的制备方法，其中，在所述衬底基板背离所述显示结构层的一侧通过胶材依次粘接所述偏振片、所述第一四分之一波片和所述透明盖板之前，在所述衬底基板背离所述显示结构层的一侧通过胶材粘接第二四分之一波片。
  19. 一种制作如权利要求8所述的显示面板的制备方法，包括：
    在所述衬底基板的一侧依次形成多个像素电路、所述光探测层和多个发光器件，所述多个像素电路和所述多个发光器件构成所述显示结构层；
    在所述多个发光器件背离所述衬底基板的一侧通过胶材依次粘接所述偏振片、所述第一四分之一波片和所述透明盖板。
  20. 根据权利要求19所述的显示面板的制备方法，其中，在所述多个发光器件背离所述衬底基板的一侧通过胶材依次粘接所述偏振片、所述第一四分之一波片和所述透明盖板之前，在所述多个发光器件背离所述衬底基板的一侧通过胶材粘接第二四分之一波片。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115696976A (zh) * 2022-10-28 2023-02-03 京东方科技集团股份有限公司 显示模组及显示装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111312768A (zh) * 2020-02-24 2020-06-19 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板
CN111969124B (zh) * 2020-08-17 2023-05-19 维沃移动通信有限公司 显示模组和电子设备
CN114373384A (zh) * 2020-10-18 2022-04-19 胜薪科技股份有限公司 电子装置
CN112684627B (zh) * 2020-12-30 2023-03-07 天马微电子股份有限公司 液晶显示面板及显示装置
CN112635539B (zh) * 2021-01-05 2022-09-06 昆山工研院新型平板显示技术中心有限公司 显示面板及显示模组
CN114509840A (zh) * 2022-02-10 2022-05-17 Oppo广东移动通信有限公司 膜片、显示屏和电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050248264A1 (en) * 2004-05-05 2005-11-10 Eastman Kodak Company OLED display with composite photosensor
CN101047200A (zh) * 2006-03-28 2007-10-03 统宝光电股份有限公司 有机电激发光显示元件及其制造方法
CN110265442A (zh) * 2019-06-14 2019-09-20 京东方科技集团股份有限公司 显示基板及包含其的显示面板
CN111312768A (zh) * 2020-02-24 2020-06-19 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040031966A1 (en) * 2002-08-16 2004-02-19 Forrest Stephen R. Organic photonic integrated circuit using a photodetector and a transparent organic light emitting device
JP2004303481A (ja) * 2003-03-28 2004-10-28 Sanyo Electric Co Ltd 発光素子及び発光表示装置
US20040257352A1 (en) * 2003-06-18 2004-12-23 Nuelight Corporation Method and apparatus for controlling
US20060180890A1 (en) * 2005-01-18 2006-08-17 Naugler W E Jr Top emission flat panel display with sensor feedback stabilization
US8537311B2 (en) * 2010-11-03 2013-09-17 Blackberry Limited Display devices containing a circular polarizing system and methods related thereto
US20160077267A1 (en) * 2013-05-17 2016-03-17 Konica Minolta, Inc. Polarizing plate and display device therewith
JP2015018770A (ja) * 2013-07-12 2015-01-29 パナソニックＩｐマネジメント株式会社 有機エレクトロルミネッセンス素子及び照明装置
KR102395919B1 (ko) * 2015-06-19 2022-05-10 삼성디스플레이 주식회사 유기발광 표시장치
CN104914602B (zh) * 2015-07-10 2019-05-31 京东方科技集团股份有限公司 显示装置和阵列基板
CN107025451B (zh) * 2017-04-27 2019-11-08 上海天马微电子有限公司 一种显示面板及显示装置
CN109696682A (zh) * 2017-10-23 2019-04-30 华为技术有限公司 光学检测组件和终端设备
CN109801935B (zh) * 2019-01-31 2021-01-26 京东方科技集团股份有限公司 光探测面板及其制作方法、显示装置
CN110208957A (zh) * 2019-05-31 2019-09-06 京东方科技集团股份有限公司 有机发光显示面板及电子设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050248264A1 (en) * 2004-05-05 2005-11-10 Eastman Kodak Company OLED display with composite photosensor
CN101047200A (zh) * 2006-03-28 2007-10-03 统宝光电股份有限公司 有机电激发光显示元件及其制造方法
CN110265442A (zh) * 2019-06-14 2019-09-20 京东方科技集团股份有限公司 显示基板及包含其的显示面板
CN111312768A (zh) * 2020-02-24 2020-06-19 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115696976A (zh) * 2022-10-28 2023-02-03 京东方科技集团股份有限公司 显示模组及显示装置

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